WO2023206185A1 - 光电探测器及电子设备 - Google Patents

光电探测器及电子设备 Download PDF

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Publication number
WO2023206185A1
WO2023206185A1 PCT/CN2022/089699 CN2022089699W WO2023206185A1 WO 2023206185 A1 WO2023206185 A1 WO 2023206185A1 CN 2022089699 W CN2022089699 W CN 2022089699W WO 2023206185 A1 WO2023206185 A1 WO 2023206185A1
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WIPO (PCT)
Prior art keywords
signal line
bias signal
electrode
connection
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2022/089699
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English (en)
French (fr)
Chinese (zh)
Inventor
张冠
李金钰
王振宇
姜振武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Beijing BOE Sensor Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Beijing BOE Sensor Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to JP2024542354A priority Critical patent/JP2025513151A/ja
Priority to PCT/CN2022/089699 priority patent/WO2023206185A1/zh
Priority to GB2410422.6A priority patent/GB2629531A/en
Priority to CN202280001019.0A priority patent/CN117321769A/zh
Priority to US18/025,200 priority patent/US12461254B2/en
Priority to JP2024543876A priority patent/JP2025512221A/ja
Priority to CN202380008846.7A priority patent/CN117321782A/zh
Priority to PCT/CN2023/091353 priority patent/WO2023208149A1/zh
Priority to GB2409833.7A priority patent/GB2629699A/en
Publication of WO2023206185A1 publication Critical patent/WO2023206185A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00—Details of radiation-measuring instruments
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate

Definitions

  • the present disclosure belongs to the technical field of flat panel detectors, and specifically relates to a photoelectric detector and electronic equipment.
  • X-ray detection technology is widely used in industrial non-destructive testing, container scanning, circuit board inspection, medical care, security, industry and other fields, and has broad application prospects.
  • Traditional X-Ray imaging technology is analog signal imaging, with low resolution and poor image quality.
  • the X-ray digital imaging technology Digital Radio Graphy, DR
  • DR Digital Radio Graphy
  • X-ray photodetectors to directly convert X-ray images into digital images. Because the converted digital images are clear, high-resolution, and easy to save and Transmission has become a hot topic in current research.
  • X-ray photodetectors are divided into direct conversion type (Direct DR) and indirect conversion type (Indirect DR).
  • Direct DR direct conversion type
  • Indirect DR indirect conversion type
  • the indirect conversion X-ray photodetector technology has been widely developed and applied due to its relatively mature technology, relatively low cost, high detection quantum efficiency (DQE), and good reliability.
  • FPD includes scintillator, image sensor, control module, signal processing module and communication module.
  • the scintillator absorbs X-ray and converts it into visible light;
  • the image sensor is composed of a pixel array composed of a photodiode and a TFT switch (Thin Film Transistor, thin film transistor).
  • TFT switch Thin Film Transistor, thin film transistor.
  • the signal processing module amplifies the electrical signal and converts it into a digital signal through an analog-to-digital converter, which is then imaged after correction and compensation processing.
  • PIN type X-ray photodetectors mainly include transistors (Thin Film Transistor, TFT) and photodiodes (PIN).
  • TFT Thin Film Transistor
  • PIN photodiodes
  • the scintillator layer or phosphor layer of the indirect conversion X-ray photodetector converts X-ray photons into visible light, and then converts the visible light into electrical signals under the action of PIN, and finally reads the electrical signals through TFT And output the electrical signal to obtain the display image.
  • Photodetectors with a metal-semiconductor-metal (MSM) structure do not require a doping process and have the advantages of simple preparation process and low cost. They also have a large filling rate and a good response speed.
  • the preparation process of the metal-semiconductor-metal (MSM) photodetector is compatible with the thin film transistor and is easy to integrate, so that the ray detector using the metal-semiconductor-metal (MSM) structure photodetector has a simple preparation process and low cost. Lower advantages.
  • photodetectors with metal-semiconductor-metal (MSM) structures have larger dark current, lower quantum detection efficiency (DQE), and lower modulation transfer function (MTF).
  • the ray detector also includes a scintillator, which absorbs the rays and converts the radiation energy into light that can be detected by the photoelectric sensor. It should be noted that the scintillator can be selected to be sensitive to X-rays, ⁇ -rays or other rays according to actual needs. In this way, the ray detector can function as a detector such as an X-ray detector, a gamma ray detector, etc.
  • the present invention aims to solve at least one of the technical problems existing in the prior art and provide a photoelectric detector and electronic equipment.
  • an embodiment of the present disclosure provides a photodetector, which is divided into a pixel area and a peripheral area surrounding the pixel area; the photodetector includes a base substrate, and is disposed on the base substrate, and A plurality of pixel units located in the pixel area;
  • the pixel unit includes a thin film transistor, a photodiode, and a storage capacitor; wherein,
  • the first electrode of the thin film transistor is connected to the first electrode of the photodiode and the first plate of the storage capacitor, and the second electrode of the photodiode is connected to the first bias signal line, so The second plate of the storage capacitor is connected to the second bias signal line, and the first bias signal line is electrically connected to the second bias signal line, and the connection node is located in the peripheral area.
  • the plurality of pixel units form a plurality of first pixel groups arranged side by side along the first direction, and form a plurality of second pixel groups arranged side by side along the second direction; each of the first pixel groups The pixel units are arranged side by side along the second direction; each of the pixel units in the second pixel group is arranged side by side along the first direction;
  • the gates of each of the thin film transistors are connected to the same gate line;
  • the second electrode of each thin film transistor is connected to the same data line; the second electrode of each photodiode is connected to the same first bias signal line; and the third electrode of each storage capacitor is connected to the same first bias signal line.
  • the diode plate is connected to the same second bias signal line, and the first bias signal line is electrically connected to the second bias signal line.
  • the orthogonal projected areas of the first connection part, the second connection part and the first connection via hole on the base substrate are respectively a first area, a second area and a third area; the first The ratio of the area to the third area and the ratio of the second area to the third area are both between 16:9 and 4:1.
  • the center of the orthographic projection of the first connection via hole on the base substrate, and the first connection part and the second connection part electrically connected through the first connection via hole are on the substrate.
  • the centers of the orthographic projections on the base substrate coincide.
  • the first connection via hole and the first connection via hole are The distance between the orthographic projections of the first connection via hole and the second connection part on the base substrate is the first distance. ;
  • the first distance and the second distance are both between 1.5 and 3 ⁇ m.
  • first connecting part and the connecting strip electrically connected thereto are connected to form an integrated structure.
  • the first extension part is located between the second extension part and the data line. between the data lines.
  • the distance between the first extension part and the second extension part in the first direction is greater than the distance between the first extension part and the data line in the first direction.
  • the photodetector includes a first conductive layer, a first insulating layer and a second conductive layer sequentially arranged on the base substrate;
  • the first and second poles of the thin film transistor, the data line, the second bias signal line and the second plate of the storage capacitor are located on the first conductive layer;
  • the first plate of the storage capacitor is located on the second conductive layer, and the first plate is shared with the first electrode of the photodiode and passes through a second connection via hole that penetrates the first insulating layer. electrically connected to the first electrode of the thin film transistor.
  • the pixel unit further includes a first connection electrode located on the first conductive layer; the first electrode of the thin film transistor is electrically connected to the first connection electrode, and the first connection electrode The electrode is electrically connected to the first plate of the storage capacitor through the second connection via hole.
  • the PIN semiconductor layer of the photodiode and the second electrode are arranged in sequence on the side of the second conductive layer facing away from the base substrate;
  • the photodetector also includes a layer on which the second electrode is located. a second insulating layer and a third conductive layer arranged sequentially on the side facing away from the base substrate;
  • the first bias signal line is located on the third conductive layer, and the first bias signal line is electrically connected to the second electrode of the photodiode through a third connection via hole penetrating the first insulating layer.
  • the pixel unit further includes a light-shielding pattern, and the light-shielding pattern is located on the third conductive layer;
  • the orthographic projection of the light-shielding pattern in the pixel unit on the base substrate covers the area where the thin film transistor is located.
  • the second insulating layer includes a first inorganic insulating layer, an organic insulating layer and a second inorganic insulating layer that are sequentially arranged in a direction away from the base substrate.
  • embodiments of the present disclosure provide an electronic device, which includes any one of the above photodetectors.
  • Figure 1 is a schematic diagram of an exemplary photodetector.
  • Figure 2 is a schematic diagram of a photodetector according to an embodiment of the present disclosure.
  • FIG. 3 is a partial cross-sectional view of a pixel unit of the photodetector according to an embodiment of the present disclosure.
  • FIG 4 is a top view of the layer where the second bias signal line and the second plate of the storage capacitor are formed in the photodetector according to the embodiment of the present disclosure.
  • FIG. 5 is a top view of the first bias signal line formed in the photodetector according to the embodiment of the present disclosure.
  • FIG. 6 is a top view of a gate metal layer formed in a photodetector according to an embodiment of the present disclosure.
  • FIG. 7 is a top view of an active semiconductor layer formed in a photodetector according to an embodiment of the present disclosure.
  • FIG. 8 is a top view of the first conductive layer formed in the photodetector according to the embodiment of the present disclosure.
  • FIG. 9 is a top view of the second conductive layer formed in the photodetector according to the embodiment of the present disclosure.
  • FIG. 10 is a top view of the second electrode layer formed in the photodetector according to the embodiment of the present disclosure.
  • FIG. 11 is a top view of the third conductive layer formed in the photodetector according to the embodiment of the present disclosure.
  • Figure 12 is a layout of a pixel unit in the photodetector according to an embodiment of the present disclosure.
  • Figure 13 is a schematic block diagram of an electronic device according to an embodiment of the present disclosure.
  • Figure 1 is a schematic diagram of an exemplary photodetector; as shown in Figure 1, the photodetector includes a base substrate, a plurality of pixel units 10 arranged on the base substrate, a plurality of gate lines Gate, a plurality of The data line Data and a plurality of first bias signal lines Bias1.
  • the plurality of pixel units 10 form a plurality of first pixel groups 11 arranged side by side along the first direction X, and form a plurality of second pixel groups 12 arranged side by side along the second direction Y; wherein each of the first pixel groups 11
  • the pixel units 10 are arranged side by side along the second direction Y, and each pixel unit 10 in the second pixel group 12 is arranged side by side along the first direction X.
  • Each pixel unit 10 includes a thin film transistor TFT, a photodiode PIN and a storage capacitor C.
  • the first electrode of the thin film transistor TFT is electrically connected to the first electrode of the photodiode PIN and the first plate CC1 of the storage capacitor C; the second plate CC2 of the storage capacitor C and the photodiode
  • the second electrode of the PIN is electrically connected.
  • the second electrode of each thin film transistor TFT in the same first pixel group 11 is connected to the same data line Data
  • the second electrode of the photodiode PIN is connected to the same first bias signal line Bias1.
  • the gate electrodes of each thin film transistor TFT in the same second pixel group 12 are connected to the same gate line Gate.
  • the photodiode PIN in the pixel unit 10 is configured to convert the received optical signal into an electrical signal.
  • the operating level signal is written to the gate line Gate, the thin film transistor TFT is turned on, and the data line Data reads the photodiode PIN through the thin film transistor TFT.
  • the image processing module generates images based on the read electrical signals for display by the display device.
  • the reason why the storage capacitor C is added to each pixel unit 10 is because as the requirements for image resolution continue to increase, the number of pixel units 10 in the photodetector gradually increases, resulting in an effective loss of the photodiode PIN.
  • the amount of stored charge can be increased by connecting a capacitor in parallel on the photodiode PIN, thereby increasing the dynamic range of the photodiode PIN.
  • FIG. 2 is a schematic diagram of a photodetector according to an embodiment of the present disclosure
  • FIG. 3 is a partial cross-sectional view of a pixel unit of the photodetector according to an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of a photodetector according to an embodiment of the present disclosure.
  • FIG. 1 A top view of the layer where the second bias signal line and the second plate of the storage capacitor are formed;
  • Figure 5 is a top view of the layer where the first bias signal line is formed in the photodetector according to the embodiment of the present disclosure; as shown in Figures 2-5, Embodiments of the present disclosure provide a photodetector, which is divided into a pixel area Q1 and a peripheral area surrounding the pixel area Q1.
  • the photodetector includes a base substrate 100, a plurality of pixel units 10 disposed on the base substrate 100, a plurality of gate lines Gate, a plurality of data lines Data, a plurality of first bias signal lines Bias1 and a plurality of second bias signal lines.
  • Any pixel unit 10 includes: a thin film transistor TFT, a photodiode PIN, and a storage capacitor C.
  • the first electrode of the thin film transistor TFT is connected to the first electrode 501 of the photodiode PIN and the first plate CC1 of the storage capacitor C; the second electrode of the thin film transistor TFT is connected to the data line Data, and the thin film transistor TFT
  • the gate of the photodiode PIN is connected to the gate line Gate;
  • the second electrode 505 of the photodiode PIN is connected to the first bias signal line Bias1, the second plate CC2 of the storage capacitor C is connected to the second bias signal line Bias2, and the first bias signal line It is electrically connected to the second bias signal line, and the connection node A is located in the surrounding area Q2.
  • the photodetector of the embodiment of the present disclosure can reduce the opening in the pixel area Q1, so that the second electrode 505 of the photodiode PIN and the second plate CC2 of the storage capacitor C are electrically connected, thus helping to increase the number of holes.
  • the size of the storage capacitor C in the pixel unit 10 is increased, thereby increasing the amount of stored charge of the photodiode PIN, thereby increasing the dynamic range of the photodiode PIN.
  • the plurality of pixel units 10 are arranged in the pixel area Q1, and the plurality of pixel units 10 form a plurality of first pixel groups 11 arranged side by side along the first direction X, and are arranged side by side along the second direction Y. a plurality of second pixel groups 12. Each pixel unit 10 in the first pixel group 11 is arranged side by side along the second direction Y, and each pixel unit 10 in the second pixel group 12 is arranged side by side along the first direction X.
  • each thin film transistor TFT For a second pixel group 12, the gate electrodes 101 of each thin film transistor TFT are connected to the same gate line Gate; for a first pixel group 11, the second electrodes of each thin film transistor TFT are connected to the same data line Data; each photoelectric The second electrode 505 of the diode PIN is connected to the same first bias signal line Bias1; the second plate CC2 of each storage capacitor C is connected to the same second bias signal line Bias2; the first bias signal line Bias1 and the second bias signal Line Bias2 is electrically connected, and connection node A is located in the peripheral area.
  • the second electrode 505 of each photodiode PIN in a first pixel group 11 is connected to the same first bias signal line Bias1; the second plate CC2 of each storage capacitor C is connected to the same second bias signal line.
  • the signal line Bias2 is set, and the first bias signal line Bias1 and the second bias signal line Bias2 are electrically connected in the peripheral area, that is, the second electrode 505 of the photodiode PIN and the second plate CC2 of the storage capacitor C are loaded with The bias voltage is the same.
  • the second electrode 505 of the photodiode PIN and the second plate CC2 of the storage capacitor C are loaded with the same bias voltage, which is through the second electrode 505 of the photodiode PIN and The second plate CC2 of the storage capacitor C is directly electrically connected.
  • the second electrode 505 of the photodiode PIN and the second plate CC2 of the storage capacitor C are not on the same layer. In this case, it is necessary to open a pass in the pixel area Q1. holes to enable electrical connection between the two.
  • the second bias line can be directly electrically connected to the second plate CC2 of the storage capacitor C, that is, it is provided on the same layer.
  • the line Bias1 is electrically connected to the second bias signal line Bias2, so that the second electrode 505 of the photodiode PIN and the second plate CC2 of the storage capacitor C are loaded with the same bias voltage.
  • the photodetector of the embodiment of the present disclosure can reduce the number of openings in the pixel area Q1, thus helping to increase the size of the storage capacitor C in the pixel unit 10, thereby increasing the amount of stored charge of the photodiode PIN. This in turn increases the dynamic range of the photodiode PIN.
  • the layers where the first bias signal line Bias1 and the second bias signal line Bias2 are located are both conductive layers, and to avoid short circuiting of the two-layer structures, an interlayer insulating layer is provided between the layers where they are located. Therefore, The so-called openings in the above content refer to etching via holes in the interlayer insulating layer.
  • the first bias signal line Bias1 includes a first extension part Bias11 and a first connection part Bias12;
  • the second bias signal line Bias2 includes a second extension part Bias21 and a second connection part Bias22.
  • the first extension part Bias11 and the second extension part Bias21 both extend along the second direction Y
  • the first connection part Bias12 and the second connection part Bias22 are both located in the peripheral area
  • the first connection part Bias12 is electrically connected to the first extension part Bias11
  • the second connection part Bias22 is electrically connected to the second extension part Bias21.
  • the first connection part Bias12 and the second connection part Bias22 are electrically connected through the first connection via hole 601 .
  • the first bias signal line Bias1 and the second bias signal line Bias2 that are electrically connected to the same first pixel group 11 respectively refer to the first bias signal line Bias1 and the second bias signal line Bias2 that are connected to each photodiode PIN of a first pixel group 11 .
  • the first bias signal line Bias1 of the two electrodes 505, and the second bias signal line Bias2 of the second plate CC2 connected to each storage capacitor C therein.
  • the electrically connected first bias signal line Bias1 and the second bias signal line Bias2 are electrically connected through the first connection part Bias12 and the second connection part Bias22, ensuring the stability of the connection. properties, improving product yield.
  • the first bias signal line Bias1 and the second bias signal line Bias2 are arranged in layers, and an interlayer insulating layer is provided between them.
  • the first connection via 601 refers to a hole that penetrates the interlayer insulating layer. Vias.
  • the area of the first connection portion Bias12 and the second connection portion Bias22 electrically connected through the first connection via hole 601 and the first connection via hole 601 on the base substrate 100 are respectively the third First area, second area and third area.
  • the ratio of the first area to the third area and the ratio of the second area to the third area are both between 16:9 and 4:1.
  • the electrical connection between the first connection part Bias12 and the second connection part Bias22 completely covers the first connection via 601 between them, thereby ensuring the reliability of the first connection part Bias12 and the second connection part Bias22 connect.
  • first connection part Bias12 and the second connection part Bias22 that are electrically connected through the first connection via hole 601 and the first connection via hole 601 coincide with the center of the orthographic projection on the base substrate 100 .
  • first connection via hole 601 and the first connection part Bias12 are on the base substrate 100
  • the distance between the orthographic projections of the first connection via hole 601 and the second connection part Bias22 on the base substrate 100 is the second distance. Both the first distance and the second distance are between 1.5 and 3 ⁇ m. about.
  • the values of the first distance and the second distance may be equal, may be approximately equal, or may even be different.
  • each first bias signal line Bias1 when each first bias signal line Bias1 includes an electrically connected first extension part Bias11 and a first connection part Bias12, at least part of the adjacent first connection parts Bias12 are connected to each other through a connection bar 702. Together. For example: any adjacently arranged first connecting portions Bias12 are connected together through short strips. In this way, the number of pins of the driver chip that provides the bias signal for the first bias signal line Bias1 can be effectively reduced, thereby reducing the cost.
  • the first connection portion Bias12 of the first bias signal line Bias1 and the connection bar 702 connected thereto are connected to form an integrated structure.
  • the preparation of the first bias signal line Bias1 and the connecting strip 702 can be completed in one process, and the two are connected into an integrated structure to ensure the stability of the connection between the two.
  • the first bias signal line Bias1 for the first bias signal line Bias1 , the second bias signal line Bias2 and the data line Data that are electrically connected to the same first pixel group 11 , the first bias signal line Bias1
  • the first extension part Bias11 is located between the second extension part Bias21 of the second bias signal line Bias2 and the data line Data.
  • the board CC2 is electrically connected to the second bias signal line Bias2 to facilitate wiring and ensure the uniformity of wiring in the pixel area Q1.
  • the first extension part Bias11 of the first bias signal line Bias1 is located at the first bias signal line Bias1.
  • the distance between the first extension part Bias11 and the second extension part Bias21 in the first direction X is larger than the distance between the first extension part Bias11 and the data line Data. The distance of line Data in the first direction X.
  • this arrangement is because there is a thin film transistor TFT and a photodiode PIN between the data line Data and the first extension Bias11 of the first bias signal line Bias1, and between the first bias signal line Bias1 Only the storage capacitor C is provided between the first extension part Bias11 and the second extension part Bias21 of the second bias signal line Bias2, so it is necessary to reserve more space for the thin film transistor TFT and the photodiode PIN.
  • the thin film transistor TFT used in the photodetector is a bottom-gate thin film transistor TFT.
  • the first and second electrodes of the thin film transistor TFT are the source electrode 301 and the drain electrode respectively.
  • the pole 302 is taken as an example for description, but it should be understood that this does not constitute a limitation on the scope of protection of the embodiments of the present disclosure.
  • the photodetector in the embodiment of the present disclosure includes a gate metal layer, a gate insulating layer, an active semiconductor layer, a first conductive layer, a first insulating layer, a second Conductive layer, P-type semiconductor layer, intrinsic semiconductor layer, N-type semiconductor layer, second electrode 505 layer, second insulating layer and third conductive layer.
  • FIG. 6 is a top view of a gate metal layer formed in a photodetector according to an embodiment of the present disclosure; as shown in FIG. 6 , the gate metal layer includes a gate electrode 101 and a gate line Gate of each thin film transistor TFT, and is connected to each thin film transistor TFT.
  • the gate electrode 101 and the gate line Gate electrically connected thereto are an integral structure.
  • the gate insulating layer 101 is formed on the side of the gate metal layer facing away from the base substrate 100 .
  • FIG 7 is a top view of the active semiconductor layer formed in the photodetector according to the embodiment of the present disclosure; as shown in Figure 7, the active semiconductor layer includes the active layer 201 of each thin film transistor TFT.
  • the active semiconductor layer can be made of amorphous silicon, polysilicon, oxide semiconductor materials, etc.
  • the source 301 region and the drain 302 region of the active layer 201 may be regions doped with n-type impurities or p-type impurities.
  • the semiconductor layer of the active layer 201 may be covered with an insulating layer, or may not be covered with an insulating layer.
  • Figure 8 is a top view of the first conductive layer formed in the photodetector according to the embodiment of the present disclosure; as shown in Figure 8, the first conductive layer includes the source electrode 301 and the drain electrode 302 of the thin film transistor TFT, and the second electrode of the storage capacitor C.
  • Board CC2, second bias signal line Bias2 and data line Data are electrically connected to the source electrode 301 region and the drain electrode 302 region of the active layer 201 respectively.
  • the second plate CC2 of the storage capacitor C is electrically connected to the second bias signal line Bias2.
  • the data line Data is electrically connected to the drain electrode 302 of the thin film transistor TFT.
  • the first insulating layer covers the side of the first conductive layer facing away from the base substrate 100 , and a second connection via 401 in each pixel unit 10 is formed in the first insulating layer to facilitate the subsequent formation of the photodiode PIN.
  • the first plate CC1 is electrically connected to the source electrode 301 of the thin film transistor TFT.
  • the second bias signal line Bias2 electrically connected to the second plate CC2 of the storage capacitor C in the same first pixel group 11 and the second plate CC2 of the capacitor electrically connected thereto are of an integrated structure.
  • the second bias signal line Bias2 includes a second extension part Bias21 extending along the second direction Y and a second connection part Bias22 electrically connected to the second extension part Bias21, where the second connection part Bias22 is located in the peripheral area.
  • the two extension parts Bias21 penetrate the peripheral area and the pixel area Q1, and the second extension part Bias21 penetrates the second plate CC2 of each storage capacitor C in the first pixel group 11 and is electrically connected to the second plate CC2 of the storage capacitor C.
  • the data line Data electrically connected to the drain electrode 302 of the thin film transistor TFT in the same first pixel group 11 and the data line Data electrically connected thereto are an integral structure, and the data line Data is along the second direction Y extend.
  • the first conductive layer may also include a first connection electrode 303 in each pixel unit 10 , and the first connection electrode 303 is electrically connected to the source electrode 301 of the thin film transistor TFT.
  • the first connection electrode 303 is also electrically connected to the second plate CC2 of the storage capacitor C and the first electrode 501 of the photodiode PIN formed subsequently in the pixel unit 10 .
  • Figure 9 is a top view of the second conductive layer formed in the photodetector according to the embodiment of the present disclosure; as shown in Figure 9, the second conductive layer includes the first electrode 501 of the photodiode PIN and the second plate CC2 of the storage capacitor C.
  • the first electrode 501 of the photodiode PIN and the second plate CC2 of the storage capacitor C may have an integrated structure and be connected to the source electrode 301 of the thin film transistor TFT through the second connection via 401.
  • Figure 10 is a top view of the second electrode layer formed in the photodetector according to the embodiment of the present disclosure; as shown in Figure 10, the P-type semiconductor layer, the intrinsic semiconductor layer, the N-type semiconductor layer, and the second electrode layer are sequentially arranged on the second electrode layer.
  • the conductive layer faces away from the base substrate 100 .
  • the P-type semiconductor layer includes the P-type semiconductor pattern 502 of each photodiode PIN
  • the intrinsic semiconductor layer includes the intrinsic semiconductor pattern 503 of each photodiode PIN
  • the N-type semiconductor layer includes the N-type semiconductor pattern 503 of each photodiode PIN
  • the second electrode layer includes the second electrode 505 of each photodiode PIN.
  • the first electrode 501, the P-type semiconductor pattern 502, the intrinsic semiconductor pattern 503, the N-type semiconductor pattern 504 and the second electrode 505 are stacked to form a photodiode PIN.
  • the side of the second electrode 505 facing away from the base substrate 100 is covered with a second insulating layer.
  • the second insulating layer includes a first inorganic insulating layer, an organic insulating layer and a second inorganic insulating layer that are sequentially arranged in a direction away from the base substrate 100 .
  • the first inorganic insulating layer and the second inorganic insulating layer may be passivation layers
  • the organic insulating layer may be a planarization layer. The thickness of the planarization layer is greater than the thickness of the passivation layer.
  • Each pixel unit 10 also includes a first connection via hole 601 and a third connection via hole 602.
  • the first connection via hole 601 is located in the peripheral area, and the third connection via hole 602 is located in the pixel area Q1.
  • the first connection via 601 is used to electrically connect the first bias signal line Bias1 and the second bias signal line Bias2 formed later.
  • the third connection via 602 electrically connects the first bias signal line Bias1 to the second electrode 505 of the photodiode PIN.
  • FIG. 11 is a top view of the third conductive layer formed in the photodetector according to the embodiment of the present disclosure; as shown in FIG. 11 , the third conductive layer includes a first bias signal line Bias1.
  • the first bias signal line Bias1 is electrically connected to the second bias signal line Bias2 through the first connection via hole 601, and is electrically connected to the second electrode 505 of the photodiode PIN through the third connection via hole 602.
  • the second electrode 505 of the photodiode PIN in each pixel unit 10 is connected to the same second bias signal line Bias2.
  • the first bias signal line Bias1 may include a first extension portion Bias11 extending along the second direction Y and a second connection portion Bias22.
  • the first connecting portion Bias12 electrically connected to the first extending portion Bias11 is electrically connected to the first bias signal line Bias1 and the second bias signal line Bias2 of the same first pixel group 11.
  • the connection part Bias12 is electrically connected to the second connection part Bias22 of the second bias signal line Bias2 through the first connection via hole 601.
  • the first extension part Bias11 of the first bias signal line Bias1 is electrically connected to the second electrode 505 of the photodiode PIN through the third connection via hole 602 .
  • the first bias signal line Bias1 may also include a plurality of third connection portions Bias13 electrically connected to the first extension portion Bias11, and the third connection portions Bias13 are arranged in one-to-one correspondence with the pixel unit 10.
  • a third connection portion The Bias13 is electrically connected to the second electrode 505 of the photodiode PIN through the third connection via hole 602.
  • the third conductive layer may also include a connection bar 702 that electrically connects the adjacent first connection parts Bias12. Wherein, the connecting strip 702 may extend along the first direction X.
  • the light-shielding pattern 701 may also be included in the third conductive layer.
  • the orthographic projection of the light-shielding pattern 701 in the pixel unit 10 on the base substrate 100 covers the area where the thin film transistor TFT is located, thereby effectively preventing light from irradiating the thin film transistor TFT and affecting the optical properties of the thin film transistor TFT, thereby causing defects in the photodetector.
  • the light shielding pattern 701 may be connected to the first bias signal line Bias1 to form an integrated structure.
  • Figure 12 is a layout of a pixel unit in the photodetector according to an embodiment of the present disclosure; as shown in Figure 12, the orthographic projection of the second plate CC2 of the storage capacitor C on the substrate 100 is located at the storage capacitor The first plate CC1 of C is within the orthographic projection on the base substrate 100 .
  • the outline of the orthographic projection of the second plate CC2 of the storage capacitor C on the substrate substrate 100 includes the first line segment S1 , and the second electrode 505 of the photodiode PIN is on the substrate substrate 100
  • the orthographic projection outline on includes the second line segment S2.
  • the first line segment and the second line segment S2 are parallel, that is, the distance between any positions of the two is equal.
  • the photodetector in the embodiment of the present disclosure may also include a third conductive layer, a third insulating layer and a scintillation layer arranged in sequence on the side facing away from the base substrate 100 .
  • the scintillation layer absorbs the rays and converts the radiated energy into light that can be detected by a photoelectric sensor.
  • the scintillation layer can be selected to be sensitive to X-rays, ⁇ -rays or other rays according to actual needs.
  • the ray detector can function as a detector such as an X-ray detector, a gamma ray detector, etc.
  • FIG. 13 is a schematic block diagram of an electronic device according to an embodiment of the present disclosure; as shown in FIG. 13 , the electronic device 200 includes the photodetector described in any of the previous embodiments. Examples of the electronic device 200 include medical diagnostic equipment, industrial testing equipment, geological exploration equipment, and the like. The electronic device 200 has the same advantages as the radiation detector embodiment.

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PCT/CN2022/089699 2022-04-28 2022-04-28 光电探测器及电子设备 Ceased WO2023206185A1 (zh)

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JP2024542354A JP2025513151A (ja) 2022-04-28 2022-04-28 光電検出器及び電子デバイス
PCT/CN2022/089699 WO2023206185A1 (zh) 2022-04-28 2022-04-28 光电探测器及电子设备
GB2410422.6A GB2629531A (en) 2022-04-28 2022-04-28 Photoelectric detector and electronic device
CN202280001019.0A CN117321769A (zh) 2022-04-28 2022-04-28 光电探测器及电子设备
US18/025,200 US12461254B2 (en) 2022-04-28 2022-04-28 Photoelectric detector and electronic device
JP2024543876A JP2025512221A (ja) 2022-04-28 2023-04-27 検出基板及びフラットパネル検出器
CN202380008846.7A CN117321782A (zh) 2022-04-28 2023-04-27 一种探测基板及平板探测器
PCT/CN2023/091353 WO2023208149A1 (zh) 2022-04-28 2023-04-27 一种探测基板及平板探测器
GB2409833.7A GB2629699A (en) 2022-04-28 2023-04-27 Detection substrate and flat panel detector

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