WO2023189907A1 - Procédé de fabrication d'un module de cellules solaires - Google Patents

Procédé de fabrication d'un module de cellules solaires Download PDF

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Publication number
WO2023189907A1
WO2023189907A1 PCT/JP2023/011132 JP2023011132W WO2023189907A1 WO 2023189907 A1 WO2023189907 A1 WO 2023189907A1 JP 2023011132 W JP2023011132 W JP 2023011132W WO 2023189907 A1 WO2023189907 A1 WO 2023189907A1
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sub
module
solar cell
base material
electrode layer
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PCT/JP2023/011132
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English (en)
Japanese (ja)
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淳一 中村
広平 小島
徹 寺下
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株式会社カネカ
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Priority to CN202380016903.6A priority Critical patent/CN118542084A/zh
Publication of WO2023189907A1 publication Critical patent/WO2023189907A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell module manufacturing method.
  • Solar cell modules made by connecting multiple solar cells are widely used.
  • a method for manufacturing a solar cell module a conductive pattern is formed on a substrate using solder paste, and each solar cell is arranged in accordance with this conductive pattern, thereby obtaining a solar cell module in which a plurality of solar cells are connected.
  • a solar cell module manufacturing method has been proposed (for example, see Patent Document 1).
  • the solar cell is rigid as in Patent Document 1, it can be held in the air (above the substrate) relatively easily by, for example, adsorption with a suction pad. Positioning can be performed with high precision.
  • an object of the present invention is to provide a solar cell module manufacturing method that allows flexible submodules to be placed accurately.
  • a solar cell module manufacturing method includes a sheet-like base material and a plurality of sub-modules that are arranged in line on the base material and each perform photoelectric conversion.
  • the manufacturing method includes a step of forming sub-modules each performing photoelectric conversion on a plurality of transparent support substrates, and repeating the step of shifting the position and disposing the sub-modules one by one on the base material.
  • the step of arranging the sub-modules one by one includes the step of placing the sub-modules together with the supporting substrate on the base material with the supporting substrate facing upward;
  • the method includes the steps of cutting an end of the submodule by irradiating the submodule with a laser through the substrate, and removing the support substrate and the end of the submodule.
  • the end of the submodule is overlapped with the end of the previously disposed submodule, and the submodule is placed on the substrate.
  • the step of cutting the end of the module the end that overlaps the end of the previously disposed sub-module may be cut off.
  • the solar cell module manufacturing method described above may further include a step of disposing a connecting member connecting the sub-modules on the base material.
  • the step of forming the submodule includes a step of forming a transparent resin film on one main surface of the support substrate, and a step of laminating a first electrode layer on the resin film. , forming a first separation groove extending in a first direction and cutting the first electrode layer; laminating a power generation layer that performs photoelectric conversion on the first electrode layer; forming a second separation groove extending in the first direction and cutting the power generation layer on a first side in a second direction intersecting the first direction; and laminating a second electrode layer on the power generation layer.
  • the sub-module in the step of placing the sub-module on the base material, the sub-module is arranged such that the end of the sub-module on the first side in the second direction is placed first. It may be layered on top of the .
  • FIG. 1 is a flowchart showing the steps of a solar cell module manufacturing method according to an embodiment of the present invention.
  • 2 is a schematic cross-sectional view showing the configuration of a solar cell module manufactured by the solar cell module manufacturing method of FIG. 1.
  • FIG. 2 is a schematic cross-sectional view showing the configuration of a submodule formed in the submodule forming step of FIG. 1.
  • FIG. 2 is a flowchart showing a detailed procedure of the submodule forming process of FIG. 1.
  • FIG. 2 is a flowchart showing a detailed procedure of the submodule arrangement process of FIG. 1.
  • FIG. FIG. 6 is a schematic cross-sectional view illustrating the submodule cutting process of FIG. 5.
  • FIG. 1 is a flowchart showing the steps of a solar cell module manufacturing method according to an embodiment of the present invention.
  • the method for manufacturing a solar cell module according to an embodiment of the present invention shown in FIG. This is a method of manufacturing a solar cell module 1 including a plurality of sub-modules 20 that perform the following steps.
  • the solar cell module manufacturing method of the present embodiment includes a step of forming each submodule 20 on a plurality of transparent support substrates S (step S1: submodule forming step), and a step of shifting the position.
  • step S1 submodule forming step
  • step S2 sub-module arrangement step
  • step S3 submodule arrangement confirmation step.
  • the sub-module arrangement process of step S2 is repeated until the required number of sub-modules 20 have been arranged.
  • the solar cell module 1 manufactured by the solar cell module manufacturing method of FIG. A plurality of connection members 30 are provided between the material 10 and the submodules 20 and connect the adjacent submodules 20.
  • the solar cell module 1 converts the energy of light incident from the side opposite to the base material 10 into electric power.
  • the solar cell module 1 may be a submodule that is incorporated into a higher-level module, such as a so-called string in which submodules 20 are connected in a row.
  • the base material 10 is a structural member that supports a plurality of submodules 20.
  • a resin sheet can be used as the base material 10.
  • the sub-modules 20 are formed in a band shape extending in a first direction (depth direction in the paper), are arranged side by side in a second direction (horizontal direction in the paper) intersecting the first direction, and are electrically connected in series. Each cell has a plurality of subcells C.
  • the sub-module 20 has an end on the first side in the second direction (left side in FIG. 2) and a light-receiving surface side (upper side in the paper) of the end on the second side in the second direction (right side in FIG. 2) of the adjacent sub-module 20. are placed on top of each other.
  • each component is increased for ease of understanding, so it appears that the sub-module 20 is inclined with respect to the base material 10, but the actual thickness of each layer is very small, so the sub-module 20 is The module 20 is arranged in close contact with and parallel to the base material 10.
  • the sub-module 20 has a transparent resin film 21, a first electrode layer 22, a power generation layer 23, and a second electrode layer 24 in this order from the light-receiving surface side.
  • the sub-module 20 is constructed by cutting a portion of these layers with a plurality of first separation grooves 25, a plurality of second separation grooves 26, and a plurality of third separation grooves 27 extending in the first direction, respectively.
  • a plurality of subcells C formed in a band shape extending in the direction and lined up in a second direction intersecting the first direction, and a plurality of intermediate connecting portions each formed between the subcells C and electrically connecting adjacent subcells C.
  • the submodule 20 has three subcells C in FIG. 2 shown in a simplified manner, it may actually have a larger number of subcells C.
  • the first separation groove 25, the second separation groove 26, and the third separation groove 27 are formed at equal pitches so that they approach the first side in this order from the second side in the second direction.
  • the first separation groove 25 cuts the first electrode layer 22, the second separation groove 26 cuts the power generation layer 23, and the third separation groove 27 cuts the power generation layer 23 and the second electrode layer 24. Cut 24.
  • the first separation groove 25 defines the edge of the subcell C on the first side in the second direction
  • the third separation groove defines the edge of the effective area of the subcell C on the second side in the second direction.
  • a second isolation trench 26 providing electrical connection between the subcells C by virtue of which a second electrode layer 24 extends therein.
  • the range in which the first electrode layer 22, the power generation layer 23, and the second electrode layer 24 all exist continuously is one subcell C that integrally generates electric power
  • the first separation between the subcells C is An intermediate connection portion M is a region where the groove 25, the second separation groove 26, and the third separation groove 27 are formed close to each other.
  • the invalid region R may not be present, but when cutting the end of the sub-module 20 on the first side in the second direction, the end subcell C on the first side in the second direction may be accidentally cut. It may be provided as a margin to prevent breakage.
  • the external connection area E is a relay for electrically connecting the first electrode layer 22 of the subcell C at the end on the second side in the second direction to the adjacent submodule 20 or the external circuit of the solar cell module 1.
  • a second electrode layer 24 is provided as a terminal.
  • connection member 30 connects the second electrode layer 24 of the subcell C at the end of the first side in the second direction of the submodule 20 that is stacked on the light receiving surface side, and the external connection area of the submodule 20 that is stacked on the side opposite to the light receiving surface. and the second electrode layer 24 of E are connected to each other.
  • the connection member 30 is made of, for example, a conductive adhesive.
  • step S1 the submodule forming step in step S1 of the solar cell module manufacturing method in FIG. formation step), a step of laminating the first electrode layer 22 on the resin film 21 (step S12: first electrode layer lamination step), and a first separation groove 25 extending in the first direction and cutting the first electrode layer 22.
  • step S13 first separation groove forming step
  • step S14 power generation layer lamination step
  • step S15 second separation groove formation step
  • step S16 second electrode layer lamination step
  • step S17 third separation groove forming step
  • a resin film 21 made of a resin such as polyimide, polyamide, polyethylene terephthalate, etc. is laminated on a support substrate S such as a glass plate.
  • the resin film 21 is a structural member that ensures the strength of the solar cell module 1.
  • the resin film 21 is preferably laminated by a method of producing polyimide on the support substrate S, including, for example, a step of applying a polyamic acid solution and a step of heating the coating film of the polyamic acid solution. Thereby, a thin and smooth resin film 21 can be formed.
  • the lower limit of the thickness of the resin film 21 is preferably 3 ⁇ m, more preferably 10 ⁇ m.
  • the upper limit of the thickness of the resin film 21 is preferably 50 ⁇ m, more preferably 30 ⁇ m.
  • the first electrode layer 22 is laminated on the resin film 21 by a method such as a sputtering method or a vacuum evaporation method.
  • the first electrode layer 22 collects the first charge generated in the power generation layer 23 and outputs it to the adjacent subcell C or to the outside.
  • the first electrode layer 22 is formed from transparent conductive oxide (TCO).
  • TCO transparent conductive oxide
  • indium oxide, tin oxide, zinc oxide, titanium oxide, and composite oxides thereof can be used.
  • indium-based composite oxides containing indium oxide as a main component are preferred. Indium oxide is particularly preferred from the viewpoint of high conductivity and transparency.
  • dopants to the indium oxide to ensure reliability or higher conductivity.
  • the dopant include Sn, W, Zn, Ti, Ce, Zr, Mo, Al, Ga, Ge, As, Si, and S.
  • ITO Indium Tin Oxide
  • ITO Indium Tin Oxide
  • the lower limit of the thickness of the first electrode layer 22 is preferably 5 nm, more preferably 10 nm.
  • the upper limit of the thickness of the first electrode layer 22 is preferably 100 nm, more preferably 50 nm.
  • the first separation groove 25 is formed by removing the first electrode layer 22 in a plurality of parallel lines extending in the first direction in plan view using laser ablation.
  • the laser for irradiation for example, a THG (third harmonic) laser or the like can be used.
  • the intensity of the laser beam used to form the first separation grooves 25 is set so that the first electrode layer 22 can be reliably insulated between the subcells C and damage to the resin film 21 can be minimized.
  • the width of the first separation groove 25 is preferably 10 ⁇ m or more and 200 ⁇ m or less, more preferably 20 ⁇ m or more and 100 ⁇ m or less, considering that it is formed by laser ablation. This makes it possible to ensure reliable separation between the solar cell subcells 2 and to ensure the effective area of the solar cell subcells 2.
  • a power generation layer 23 that performs photoelectric conversion is laminated on the first electrode layer 22.
  • the power generation layer 23 may have a multilayer structure including a first charge transport layer, a photoelectric conversion layer, and a second charge transport layer in this order.
  • the power generation layer 23 may have further functional layers.
  • the first charge transport layer is a layer that allows charges of the first polarity generated in the photoelectric conversion layer to pass through, and in this embodiment, a hole transport layer (HTL) that transmits holes to the first electrode layer 22 is intended. has been done.
  • the first charge transport layer which is a hole transport layer, is made of a metal oxide such as nickel oxide (NiO) or copper oxide (Cu 2 O), such as PTAA (Poly(bis(4-phenyl)(2,4,6 -trimethylphenyl)amine)), Spiro-MeOTAD, etc. Further, the first charge transport layer may be formed from self-assembled monolayers (SAM).
  • the first charge transport layer made of a self-assembled monolayer is, for example, 2PACz ([2-(9H-Carbazol-9-yl)ethyl]phosphonic Acid), MeO-2PACz ([2-(3,6-Dimethoxy- 9H-carbazol-9-yl)ethyl]phosphonic Acid), Me-4PACz ([4-(3,6-Dimethyl-9H-carbazol-9-yl)butyl]phosphonic Acid), and the like.
  • the first charge transport layer may be formed by, for example, a sputtering method, a vacuum evaporation method, or the like. Further, when the first charge transport layer contains an organic substance, the first charge transport layer may be formed by, for example, applying a solution of the organic substance and drying the solution.
  • the first charge transport layer consisting of a self-assembled monolayer is formed by coating and drying a monolayer-forming material solution prepared by dissolving the self-assembled monolayer-forming material in an organic solvent such as ethanol or isopropanol. can be done.
  • the monomolecular film forming material solution is preferably applied by, for example, a spin coating method.
  • the thickness of the first charge transport layer can vary greatly depending on its material, the structure of adjacent layers, etc., but can be, for example, 1 nm or more and 200 nm or less, and particularly when it is a self-assembled monolayer, the thickness of the material molecules It can be the thickness.
  • the photoelectric conversion layer absorbs incident light and generates photocarriers (electrons and holes).
  • the photoelectric conversion layer may be formed from a material containing a perovskite compound.
  • the perovskite compound contained in the photoelectric conversion layer includes an organic atom A containing at least one of a monovalent organic ammonium ion and an amidinium ion, a metal atom B generating a divalent metal ion, and an iodide ion I.
  • a halogen atom X containing at least one of bromide ion Br, chloride ion Cl, and fluoride ion F, and represented by ABX 3 can be used.
  • the organic atom A is preferably methylammonium MA (CH 3 NH 3 )
  • the metal atom B is preferably lead Pb
  • the halogen atom X is iodine. At least one of compound I, bromide ion Br and chloride ion Cl is preferred.
  • preferred perovskite compounds include methylammonium lead halide MAPbX 3 (CH 3 NH 3 PbX 3 ), MAPbI 3 , MAPbBr 3 , MAPbCl 3 and the like.
  • the halogen atom X may include a plurality of types. Examples of perovskite compounds containing iodide I and other halogen atoms X include methylammonium lead iodide MAPbI y X (3-y) (CH 3 NH 3 PbI y X (3-y) ), MAPbI y Br ( 3-y) , MAPbI y Cl (3-y) , etc. (y is any positive integer).
  • the photoelectric conversion layer includes a lead halide (PbX 2 ) material and methyl halide. It can be formed by sequentially depositing ammonium (MAX) materials and reacting thin films of these materials at reaction temperatures.
  • MAPbI y X methylammonium lead iodide
  • MAI methylammonium iodide
  • the photoelectric conversion layer can also be formed, for example, by a sol-gel method in which a perovskite compound is synthesized within a liquid phase coating film, or a coating method in which a solution containing a pre-synthesized perovskite compound is applied.
  • the thickness of the photoelectric conversion layer depends on the forming material, etc., it is preferably 100 nm or more and 1000 nm or less in order to increase the light absorption rate and reduce the migration distance of the generated charges.
  • the second charge transport layer is a layer that allows charges of the second polarity generated in the photoelectric conversion layer to pass through, and in this embodiment, an electron transport layer (ETL) that transmits electrons to the second electrode layer 24 is contemplated.
  • ETL electron transport layer
  • main material of the second charge transport layer which is an electron transport layer, include PTAA (Poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), Spiro-MeOTAD, fullerene, etc. .
  • fullerenes include C60, C70, their hydrides, oxides, metal complexes, derivatives with added alkyl groups, etc., such as PCBM ([6,6]-Phenyl-C61-Butyric Acid Methyl Ester). It will be done.
  • PCBM [6,6]-Phenyl-C61-Butyric Acid Methyl Ester
  • the second charge transport layer may have a multilayer structure.
  • the second charge transport layer can be formed, for example, by a sol-gel method, a coating method, or the like.
  • the thickness of the second charge transport layer may vary greatly depending on its material, the structure of adjacent layers, etc., but may be, for example, 3 nm or more and 30 nm or less.
  • the power generation layer lamination process includes a coating process, it is difficult to uniformly form the power generation layer 23 all the way to the edge of the support substrate S. Since the power generation layer 23 having a photoelectric conversion layer containing a perovskite compound does not have a large voltage, it is desirable to reduce the width of the subcell C in the second direction. Therefore, if there is a defect in the subcell C at the end in the second direction due to poor coating, current rate limiting may occur in that subcell C, so it is recommended not to form the subcell C at both ends of the support substrate S in the second direction. desirable.
  • an invalid region R having a constant width is formed at the end of the sub-module 20 on the first side in the second direction, and ultimately, as will be described later, the invalid region R is formed so that the width of the invalid region R is made as small as possible. At least a portion of R is excised.
  • the external connection area E formed at the end of the second side of the submodule 20 in the second direction requires a certain width for electrical connection of the submodule 20, and the power generation layer 23 is free from defects. Since there is no problem even if it exists, it is used without being removed from the submodule 20.
  • a plurality of second separation grooves 26 are formed by removing the power generation layer 23 in a plurality of parallel lines by laser ablation. Thereby, the second electrode layer 24 extends into the second separation groove 26 and is connected to the first electrode layer 22 .
  • the width of the second separation groove 26 may be the same as the width of the first separation groove 25, but in order to ensure the connection of the second electrode layer 24 to the first electrode layer 22, the width of the first separation groove 25 is May be larger than .
  • the second electrode layer 24 is formed by laminating metal materials by a method such as sputtering or plating, or by coating and baking a conductive composition containing metal particles.
  • the second electrode layer 24 is an electrode that makes a pair with the first electrode layer 22.
  • the second electrode layer 24 containing metal can improve photoelectric conversion efficiency by reflecting the light that has passed through the power generation layer 23 and making it enter the power generation layer 23 again.
  • the lower limit of the thickness of the second electrode layer 24 is preferably 10 nm, more preferably 20 nm.
  • the upper limit of the thickness of the second electrode layer 24 is preferably 200 nm, more preferably 100 nm.
  • the thickness of the second electrode layer 24 By setting the thickness of the second electrode layer 24 to be equal to or greater than the lower limit, current collection resistance can be made sufficiently small. Further, by setting the thickness of the second electrode layer 24 to be less than or equal to the above upper limit, the third separation groove 27 can be easily formed.
  • a plurality of third separation grooves 27 are formed by removing the power generation layer 23 and the second electrode layer 24 in a plurality of parallel lines by laser ablation.
  • the width of the third separation groove 27 may be the same as the width of the first separation groove 25.
  • the submodule disposing step in step S2 of the solar cell module manufacturing method in FIG. a step of placing the sub-module 20 together with the supporting substrate S on the base material 10 with the supporting substrate S facing upward (step S22: sub-module mounting step), and a step of applying a laser to the sub-module 20 through the supporting substrate S.
  • a step of cutting the end portion of the sub-module 20 by irradiation (step S23: sub-module cutting step), a step of removing the end portion of the support substrate S and the sub-module 20 (step S24: support substrate removal step), including.
  • the connecting member 30 is disposed on the base material 10 at a position corresponding to the submodule 20 to be disposed next. That is, when disposing the first sub-module 20, the connection members 30 are disposed at positions corresponding to the sub-cell C and the external connection area E at the end on the first side in the second direction, and the subsequent sub-modules 20 are When disposing, the connection member is disposed at a position corresponding to the external connection area E.
  • the subcell C at the end on the first side in the second direction and the external connection area E on the second side in the second direction are placed on the connection member 30 with the support substrate S facing upward.
  • the subcell C at the end of the first side in two directions of the newly placed submodule 20 is placed so as to overlap the external connection area E of the previously placed submodule 20, light can be received in the solar cell module 1.
  • the photoelectric conversion efficiency can be improved by increasing the area of the subcell C.
  • step S23 In the sub-module cutting process of step S23, as shown in FIG.
  • the end portion of the sub-module 20 on the first side in the second direction that is, the end portion of the side overlapped with the lower sub-module 20 is cut.
  • the upper sub-module 20 can be cut relatively easily while preventing damage to the lower sub-module 20.
  • the support substrate removal step of step S24 the support substrate S is removed together with the separated end of the sub-module 20 on the first side in the second direction. Thereby, the ineffective area R of the sub-module 20 can be reduced, the effective area of the solar cell module 1 can be increased, and the photoelectric conversion efficiency can be improved.
  • the submodule 20 is supported by the support substrate S and disposed on the base material 10 and the connection member 30, the flexible submodule 20 is flattened. Since the sub-module 20 can be positioned while being held in this state, the sub-module 20 can be easily and accurately disposed.
  • the present invention is not limited to the embodiments described above, and various changes and modifications can be made.
  • all connection members corresponding to all submodules are arranged on the base material, the submodules are placed, and the ends of the submodules are cut. And the removal of the supporting substrate may be repeated as many times as necessary.
  • only the portion of the submodule to be removed is overlapped with the previously placed submodule, and finally a solar cell module in which the submodules are arranged in a plane without overlapping is manufactured. You may.

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Abstract

La présente invention concerne, selon un de ses aspects, un procédé de fabrication d'un module de cellules solaires, avec lequel il est possible d'agencer précisément des sous-modules souples (20), ledit procédé visant à fabriquer un module de cellules solaires équipé d'un matériau (10) de base en forme de feuille et une pluralité de sous-modules (20) dont chacun réalise une conversion photoélectrique et qui sont placés côte à côte sur le matériau (10) de base, le procédé comportant: une étape servant à former les sous-modules (20) respectifs sur une pluralité de substrats porteurs transparents (S); et une étape servant à disposer un à la fois, sur le matériau (10) de base, les sous-modules (20) qui réalisent la conversion photoélectrique, cette étape étant effectuée de façon répétée tout en décalant la position d'agencement, l'étape d'agencement des sous-modules (20) un à la fois comprenant une étape servant à placer le substrat porteur (S) sur le dessus et à placer le sous-module (20) sur le matériau (10) de base pour chaque substrat porteur (S), une étape servant à couper une extrémité du sous-module (20) en irradiant le sous-module (20) à l'aide d'un laser (L) à travers le substrat porteur (S), et une étape servant à retirer le substrat porteur (S) et l'extrémité du sous-module (20).
PCT/JP2023/011132 2022-03-31 2023-03-22 Procédé de fabrication d'un module de cellules solaires WO2023189907A1 (fr)

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CN202380016903.6A CN118542084A (zh) 2022-03-31 2023-03-22 太阳能电池模块制造方法

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Citations (7)

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JP2001111087A (ja) * 1999-10-07 2001-04-20 Kanegafuchi Chem Ind Co Ltd 太陽電池モジュール
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JP2001111087A (ja) * 1999-10-07 2001-04-20 Kanegafuchi Chem Ind Co Ltd 太陽電池モジュール
JP2009010355A (ja) * 2007-05-29 2009-01-15 Toray Eng Co Ltd 太陽電池モジュール
JP2012069566A (ja) * 2010-09-21 2012-04-05 Mitsubishi Electric Corp 薄膜太陽電池の製造方法
JP2013207112A (ja) * 2012-03-28 2013-10-07 Toray Eng Co Ltd 太陽電池モジュールの製造装置及び製造方法
JP2019515483A (ja) * 2016-05-06 2019-06-06 アプライド マテリアルズ イタリア エス． アール． エル． 少なくとも２つの太陽電池構成を製造するための装置、少なくとも２つの瓦重ねされた太陽電池を製造するためのシステム、及び、少なくとも２つの太陽電池構成を製造するための方法
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