WO2023189907A1 - Method for manufacturing solar cell module - Google Patents

Method for manufacturing solar cell module Download PDF

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Publication number
WO2023189907A1
WO2023189907A1 PCT/JP2023/011132 JP2023011132W WO2023189907A1 WO 2023189907 A1 WO2023189907 A1 WO 2023189907A1 JP 2023011132 W JP2023011132 W JP 2023011132W WO 2023189907 A1 WO2023189907 A1 WO 2023189907A1
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sub
module
solar cell
base material
electrode layer
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PCT/JP2023/011132
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French (fr)
Japanese (ja)
Inventor
淳一 中村
広平 小島
徹 寺下
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株式会社カネカ
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Publication of WO2023189907A1 publication Critical patent/WO2023189907A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell module manufacturing method.
  • Solar cell modules made by connecting multiple solar cells are widely used.
  • a method for manufacturing a solar cell module a conductive pattern is formed on a substrate using solder paste, and each solar cell is arranged in accordance with this conductive pattern, thereby obtaining a solar cell module in which a plurality of solar cells are connected.
  • a solar cell module manufacturing method has been proposed (for example, see Patent Document 1).
  • the solar cell is rigid as in Patent Document 1, it can be held in the air (above the substrate) relatively easily by, for example, adsorption with a suction pad. Positioning can be performed with high precision.
  • an object of the present invention is to provide a solar cell module manufacturing method that allows flexible submodules to be placed accurately.
  • a solar cell module manufacturing method includes a sheet-like base material and a plurality of sub-modules that are arranged in line on the base material and each perform photoelectric conversion.
  • the manufacturing method includes a step of forming sub-modules each performing photoelectric conversion on a plurality of transparent support substrates, and repeating the step of shifting the position and disposing the sub-modules one by one on the base material.
  • the step of arranging the sub-modules one by one includes the step of placing the sub-modules together with the supporting substrate on the base material with the supporting substrate facing upward;
  • the method includes the steps of cutting an end of the submodule by irradiating the submodule with a laser through the substrate, and removing the support substrate and the end of the submodule.
  • the end of the submodule is overlapped with the end of the previously disposed submodule, and the submodule is placed on the substrate.
  • the step of cutting the end of the module the end that overlaps the end of the previously disposed sub-module may be cut off.
  • the solar cell module manufacturing method described above may further include a step of disposing a connecting member connecting the sub-modules on the base material.
  • the step of forming the submodule includes a step of forming a transparent resin film on one main surface of the support substrate, and a step of laminating a first electrode layer on the resin film. , forming a first separation groove extending in a first direction and cutting the first electrode layer; laminating a power generation layer that performs photoelectric conversion on the first electrode layer; forming a second separation groove extending in the first direction and cutting the power generation layer on a first side in a second direction intersecting the first direction; and laminating a second electrode layer on the power generation layer.
  • the sub-module in the step of placing the sub-module on the base material, the sub-module is arranged such that the end of the sub-module on the first side in the second direction is placed first. It may be layered on top of the .
  • FIG. 1 is a flowchart showing the steps of a solar cell module manufacturing method according to an embodiment of the present invention.
  • 2 is a schematic cross-sectional view showing the configuration of a solar cell module manufactured by the solar cell module manufacturing method of FIG. 1.
  • FIG. 2 is a schematic cross-sectional view showing the configuration of a submodule formed in the submodule forming step of FIG. 1.
  • FIG. 2 is a flowchart showing a detailed procedure of the submodule forming process of FIG. 1.
  • FIG. 2 is a flowchart showing a detailed procedure of the submodule arrangement process of FIG. 1.
  • FIG. FIG. 6 is a schematic cross-sectional view illustrating the submodule cutting process of FIG. 5.
  • FIG. 1 is a flowchart showing the steps of a solar cell module manufacturing method according to an embodiment of the present invention.
  • the method for manufacturing a solar cell module according to an embodiment of the present invention shown in FIG. This is a method of manufacturing a solar cell module 1 including a plurality of sub-modules 20 that perform the following steps.
  • the solar cell module manufacturing method of the present embodiment includes a step of forming each submodule 20 on a plurality of transparent support substrates S (step S1: submodule forming step), and a step of shifting the position.
  • step S1 submodule forming step
  • step S2 sub-module arrangement step
  • step S3 submodule arrangement confirmation step.
  • the sub-module arrangement process of step S2 is repeated until the required number of sub-modules 20 have been arranged.
  • the solar cell module 1 manufactured by the solar cell module manufacturing method of FIG. A plurality of connection members 30 are provided between the material 10 and the submodules 20 and connect the adjacent submodules 20.
  • the solar cell module 1 converts the energy of light incident from the side opposite to the base material 10 into electric power.
  • the solar cell module 1 may be a submodule that is incorporated into a higher-level module, such as a so-called string in which submodules 20 are connected in a row.
  • the base material 10 is a structural member that supports a plurality of submodules 20.
  • a resin sheet can be used as the base material 10.
  • the sub-modules 20 are formed in a band shape extending in a first direction (depth direction in the paper), are arranged side by side in a second direction (horizontal direction in the paper) intersecting the first direction, and are electrically connected in series. Each cell has a plurality of subcells C.
  • the sub-module 20 has an end on the first side in the second direction (left side in FIG. 2) and a light-receiving surface side (upper side in the paper) of the end on the second side in the second direction (right side in FIG. 2) of the adjacent sub-module 20. are placed on top of each other.
  • each component is increased for ease of understanding, so it appears that the sub-module 20 is inclined with respect to the base material 10, but the actual thickness of each layer is very small, so the sub-module 20 is The module 20 is arranged in close contact with and parallel to the base material 10.
  • the sub-module 20 has a transparent resin film 21, a first electrode layer 22, a power generation layer 23, and a second electrode layer 24 in this order from the light-receiving surface side.
  • the sub-module 20 is constructed by cutting a portion of these layers with a plurality of first separation grooves 25, a plurality of second separation grooves 26, and a plurality of third separation grooves 27 extending in the first direction, respectively.
  • a plurality of subcells C formed in a band shape extending in the direction and lined up in a second direction intersecting the first direction, and a plurality of intermediate connecting portions each formed between the subcells C and electrically connecting adjacent subcells C.
  • the submodule 20 has three subcells C in FIG. 2 shown in a simplified manner, it may actually have a larger number of subcells C.
  • the first separation groove 25, the second separation groove 26, and the third separation groove 27 are formed at equal pitches so that they approach the first side in this order from the second side in the second direction.
  • the first separation groove 25 cuts the first electrode layer 22, the second separation groove 26 cuts the power generation layer 23, and the third separation groove 27 cuts the power generation layer 23 and the second electrode layer 24. Cut 24.
  • the first separation groove 25 defines the edge of the subcell C on the first side in the second direction
  • the third separation groove defines the edge of the effective area of the subcell C on the second side in the second direction.
  • a second isolation trench 26 providing electrical connection between the subcells C by virtue of which a second electrode layer 24 extends therein.
  • the range in which the first electrode layer 22, the power generation layer 23, and the second electrode layer 24 all exist continuously is one subcell C that integrally generates electric power
  • the first separation between the subcells C is An intermediate connection portion M is a region where the groove 25, the second separation groove 26, and the third separation groove 27 are formed close to each other.
  • the invalid region R may not be present, but when cutting the end of the sub-module 20 on the first side in the second direction, the end subcell C on the first side in the second direction may be accidentally cut. It may be provided as a margin to prevent breakage.
  • the external connection area E is a relay for electrically connecting the first electrode layer 22 of the subcell C at the end on the second side in the second direction to the adjacent submodule 20 or the external circuit of the solar cell module 1.
  • a second electrode layer 24 is provided as a terminal.
  • connection member 30 connects the second electrode layer 24 of the subcell C at the end of the first side in the second direction of the submodule 20 that is stacked on the light receiving surface side, and the external connection area of the submodule 20 that is stacked on the side opposite to the light receiving surface. and the second electrode layer 24 of E are connected to each other.
  • the connection member 30 is made of, for example, a conductive adhesive.
  • step S1 the submodule forming step in step S1 of the solar cell module manufacturing method in FIG. formation step), a step of laminating the first electrode layer 22 on the resin film 21 (step S12: first electrode layer lamination step), and a first separation groove 25 extending in the first direction and cutting the first electrode layer 22.
  • step S13 first separation groove forming step
  • step S14 power generation layer lamination step
  • step S15 second separation groove formation step
  • step S16 second electrode layer lamination step
  • step S17 third separation groove forming step
  • a resin film 21 made of a resin such as polyimide, polyamide, polyethylene terephthalate, etc. is laminated on a support substrate S such as a glass plate.
  • the resin film 21 is a structural member that ensures the strength of the solar cell module 1.
  • the resin film 21 is preferably laminated by a method of producing polyimide on the support substrate S, including, for example, a step of applying a polyamic acid solution and a step of heating the coating film of the polyamic acid solution. Thereby, a thin and smooth resin film 21 can be formed.
  • the lower limit of the thickness of the resin film 21 is preferably 3 ⁇ m, more preferably 10 ⁇ m.
  • the upper limit of the thickness of the resin film 21 is preferably 50 ⁇ m, more preferably 30 ⁇ m.
  • the first electrode layer 22 is laminated on the resin film 21 by a method such as a sputtering method or a vacuum evaporation method.
  • the first electrode layer 22 collects the first charge generated in the power generation layer 23 and outputs it to the adjacent subcell C or to the outside.
  • the first electrode layer 22 is formed from transparent conductive oxide (TCO).
  • TCO transparent conductive oxide
  • indium oxide, tin oxide, zinc oxide, titanium oxide, and composite oxides thereof can be used.
  • indium-based composite oxides containing indium oxide as a main component are preferred. Indium oxide is particularly preferred from the viewpoint of high conductivity and transparency.
  • dopants to the indium oxide to ensure reliability or higher conductivity.
  • the dopant include Sn, W, Zn, Ti, Ce, Zr, Mo, Al, Ga, Ge, As, Si, and S.
  • ITO Indium Tin Oxide
  • ITO Indium Tin Oxide
  • the lower limit of the thickness of the first electrode layer 22 is preferably 5 nm, more preferably 10 nm.
  • the upper limit of the thickness of the first electrode layer 22 is preferably 100 nm, more preferably 50 nm.
  • the first separation groove 25 is formed by removing the first electrode layer 22 in a plurality of parallel lines extending in the first direction in plan view using laser ablation.
  • the laser for irradiation for example, a THG (third harmonic) laser or the like can be used.
  • the intensity of the laser beam used to form the first separation grooves 25 is set so that the first electrode layer 22 can be reliably insulated between the subcells C and damage to the resin film 21 can be minimized.
  • the width of the first separation groove 25 is preferably 10 ⁇ m or more and 200 ⁇ m or less, more preferably 20 ⁇ m or more and 100 ⁇ m or less, considering that it is formed by laser ablation. This makes it possible to ensure reliable separation between the solar cell subcells 2 and to ensure the effective area of the solar cell subcells 2.
  • a power generation layer 23 that performs photoelectric conversion is laminated on the first electrode layer 22.
  • the power generation layer 23 may have a multilayer structure including a first charge transport layer, a photoelectric conversion layer, and a second charge transport layer in this order.
  • the power generation layer 23 may have further functional layers.
  • the first charge transport layer is a layer that allows charges of the first polarity generated in the photoelectric conversion layer to pass through, and in this embodiment, a hole transport layer (HTL) that transmits holes to the first electrode layer 22 is intended. has been done.
  • the first charge transport layer which is a hole transport layer, is made of a metal oxide such as nickel oxide (NiO) or copper oxide (Cu 2 O), such as PTAA (Poly(bis(4-phenyl)(2,4,6 -trimethylphenyl)amine)), Spiro-MeOTAD, etc. Further, the first charge transport layer may be formed from self-assembled monolayers (SAM).
  • the first charge transport layer made of a self-assembled monolayer is, for example, 2PACz ([2-(9H-Carbazol-9-yl)ethyl]phosphonic Acid), MeO-2PACz ([2-(3,6-Dimethoxy- 9H-carbazol-9-yl)ethyl]phosphonic Acid), Me-4PACz ([4-(3,6-Dimethyl-9H-carbazol-9-yl)butyl]phosphonic Acid), and the like.
  • the first charge transport layer may be formed by, for example, a sputtering method, a vacuum evaporation method, or the like. Further, when the first charge transport layer contains an organic substance, the first charge transport layer may be formed by, for example, applying a solution of the organic substance and drying the solution.
  • the first charge transport layer consisting of a self-assembled monolayer is formed by coating and drying a monolayer-forming material solution prepared by dissolving the self-assembled monolayer-forming material in an organic solvent such as ethanol or isopropanol. can be done.
  • the monomolecular film forming material solution is preferably applied by, for example, a spin coating method.
  • the thickness of the first charge transport layer can vary greatly depending on its material, the structure of adjacent layers, etc., but can be, for example, 1 nm or more and 200 nm or less, and particularly when it is a self-assembled monolayer, the thickness of the material molecules It can be the thickness.
  • the photoelectric conversion layer absorbs incident light and generates photocarriers (electrons and holes).
  • the photoelectric conversion layer may be formed from a material containing a perovskite compound.
  • the perovskite compound contained in the photoelectric conversion layer includes an organic atom A containing at least one of a monovalent organic ammonium ion and an amidinium ion, a metal atom B generating a divalent metal ion, and an iodide ion I.
  • a halogen atom X containing at least one of bromide ion Br, chloride ion Cl, and fluoride ion F, and represented by ABX 3 can be used.
  • the organic atom A is preferably methylammonium MA (CH 3 NH 3 )
  • the metal atom B is preferably lead Pb
  • the halogen atom X is iodine. At least one of compound I, bromide ion Br and chloride ion Cl is preferred.
  • preferred perovskite compounds include methylammonium lead halide MAPbX 3 (CH 3 NH 3 PbX 3 ), MAPbI 3 , MAPbBr 3 , MAPbCl 3 and the like.
  • the halogen atom X may include a plurality of types. Examples of perovskite compounds containing iodide I and other halogen atoms X include methylammonium lead iodide MAPbI y X (3-y) (CH 3 NH 3 PbI y X (3-y) ), MAPbI y Br ( 3-y) , MAPbI y Cl (3-y) , etc. (y is any positive integer).
  • the photoelectric conversion layer includes a lead halide (PbX 2 ) material and methyl halide. It can be formed by sequentially depositing ammonium (MAX) materials and reacting thin films of these materials at reaction temperatures.
  • MAPbI y X methylammonium lead iodide
  • MAI methylammonium iodide
  • the photoelectric conversion layer can also be formed, for example, by a sol-gel method in which a perovskite compound is synthesized within a liquid phase coating film, or a coating method in which a solution containing a pre-synthesized perovskite compound is applied.
  • the thickness of the photoelectric conversion layer depends on the forming material, etc., it is preferably 100 nm or more and 1000 nm or less in order to increase the light absorption rate and reduce the migration distance of the generated charges.
  • the second charge transport layer is a layer that allows charges of the second polarity generated in the photoelectric conversion layer to pass through, and in this embodiment, an electron transport layer (ETL) that transmits electrons to the second electrode layer 24 is contemplated.
  • ETL electron transport layer
  • main material of the second charge transport layer which is an electron transport layer, include PTAA (Poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), Spiro-MeOTAD, fullerene, etc. .
  • fullerenes include C60, C70, their hydrides, oxides, metal complexes, derivatives with added alkyl groups, etc., such as PCBM ([6,6]-Phenyl-C61-Butyric Acid Methyl Ester). It will be done.
  • PCBM [6,6]-Phenyl-C61-Butyric Acid Methyl Ester
  • the second charge transport layer may have a multilayer structure.
  • the second charge transport layer can be formed, for example, by a sol-gel method, a coating method, or the like.
  • the thickness of the second charge transport layer may vary greatly depending on its material, the structure of adjacent layers, etc., but may be, for example, 3 nm or more and 30 nm or less.
  • the power generation layer lamination process includes a coating process, it is difficult to uniformly form the power generation layer 23 all the way to the edge of the support substrate S. Since the power generation layer 23 having a photoelectric conversion layer containing a perovskite compound does not have a large voltage, it is desirable to reduce the width of the subcell C in the second direction. Therefore, if there is a defect in the subcell C at the end in the second direction due to poor coating, current rate limiting may occur in that subcell C, so it is recommended not to form the subcell C at both ends of the support substrate S in the second direction. desirable.
  • an invalid region R having a constant width is formed at the end of the sub-module 20 on the first side in the second direction, and ultimately, as will be described later, the invalid region R is formed so that the width of the invalid region R is made as small as possible. At least a portion of R is excised.
  • the external connection area E formed at the end of the second side of the submodule 20 in the second direction requires a certain width for electrical connection of the submodule 20, and the power generation layer 23 is free from defects. Since there is no problem even if it exists, it is used without being removed from the submodule 20.
  • a plurality of second separation grooves 26 are formed by removing the power generation layer 23 in a plurality of parallel lines by laser ablation. Thereby, the second electrode layer 24 extends into the second separation groove 26 and is connected to the first electrode layer 22 .
  • the width of the second separation groove 26 may be the same as the width of the first separation groove 25, but in order to ensure the connection of the second electrode layer 24 to the first electrode layer 22, the width of the first separation groove 25 is May be larger than .
  • the second electrode layer 24 is formed by laminating metal materials by a method such as sputtering or plating, or by coating and baking a conductive composition containing metal particles.
  • the second electrode layer 24 is an electrode that makes a pair with the first electrode layer 22.
  • the second electrode layer 24 containing metal can improve photoelectric conversion efficiency by reflecting the light that has passed through the power generation layer 23 and making it enter the power generation layer 23 again.
  • the lower limit of the thickness of the second electrode layer 24 is preferably 10 nm, more preferably 20 nm.
  • the upper limit of the thickness of the second electrode layer 24 is preferably 200 nm, more preferably 100 nm.
  • the thickness of the second electrode layer 24 By setting the thickness of the second electrode layer 24 to be equal to or greater than the lower limit, current collection resistance can be made sufficiently small. Further, by setting the thickness of the second electrode layer 24 to be less than or equal to the above upper limit, the third separation groove 27 can be easily formed.
  • a plurality of third separation grooves 27 are formed by removing the power generation layer 23 and the second electrode layer 24 in a plurality of parallel lines by laser ablation.
  • the width of the third separation groove 27 may be the same as the width of the first separation groove 25.
  • the submodule disposing step in step S2 of the solar cell module manufacturing method in FIG. a step of placing the sub-module 20 together with the supporting substrate S on the base material 10 with the supporting substrate S facing upward (step S22: sub-module mounting step), and a step of applying a laser to the sub-module 20 through the supporting substrate S.
  • a step of cutting the end portion of the sub-module 20 by irradiation (step S23: sub-module cutting step), a step of removing the end portion of the support substrate S and the sub-module 20 (step S24: support substrate removal step), including.
  • the connecting member 30 is disposed on the base material 10 at a position corresponding to the submodule 20 to be disposed next. That is, when disposing the first sub-module 20, the connection members 30 are disposed at positions corresponding to the sub-cell C and the external connection area E at the end on the first side in the second direction, and the subsequent sub-modules 20 are When disposing, the connection member is disposed at a position corresponding to the external connection area E.
  • the subcell C at the end on the first side in the second direction and the external connection area E on the second side in the second direction are placed on the connection member 30 with the support substrate S facing upward.
  • the subcell C at the end of the first side in two directions of the newly placed submodule 20 is placed so as to overlap the external connection area E of the previously placed submodule 20, light can be received in the solar cell module 1.
  • the photoelectric conversion efficiency can be improved by increasing the area of the subcell C.
  • step S23 In the sub-module cutting process of step S23, as shown in FIG.
  • the end portion of the sub-module 20 on the first side in the second direction that is, the end portion of the side overlapped with the lower sub-module 20 is cut.
  • the upper sub-module 20 can be cut relatively easily while preventing damage to the lower sub-module 20.
  • the support substrate removal step of step S24 the support substrate S is removed together with the separated end of the sub-module 20 on the first side in the second direction. Thereby, the ineffective area R of the sub-module 20 can be reduced, the effective area of the solar cell module 1 can be increased, and the photoelectric conversion efficiency can be improved.
  • the submodule 20 is supported by the support substrate S and disposed on the base material 10 and the connection member 30, the flexible submodule 20 is flattened. Since the sub-module 20 can be positioned while being held in this state, the sub-module 20 can be easily and accurately disposed.
  • the present invention is not limited to the embodiments described above, and various changes and modifications can be made.
  • all connection members corresponding to all submodules are arranged on the base material, the submodules are placed, and the ends of the submodules are cut. And the removal of the supporting substrate may be repeated as many times as necessary.
  • only the portion of the submodule to be removed is overlapped with the previously placed submodule, and finally a solar cell module in which the submodules are arranged in a plane without overlapping is manufactured. You may.

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Abstract

A method for manufacturing a solar cell module according to one aspect of the present invention, with which it is possible to accurately arrange flexible sub-modules (20), is a method for manufacturing a solar cell module equipped with a sheet-shaped base material (10) and a plurality of sub-modules (20) that each perform photoelectric conversion and are provided side by side on the base material (10), the method comprising: a step for forming the respective sub-modules (20) on a plurality of transparent support substrates (S); and a step for arranging one at a time, on the base material (10), the sub-modules (20) that perform photoelectric conversion, this step being repeatedly performed while shifting the arrangement position, wherein the step for arranging the sub-modules (20) one at a time includes a step for putting the support substrate (S) on top and placing the sub-module (20) on the base material (10) for each support substrate (S), a step for cutting off an end of the sub-module (20) by irradiating the sub-module (20) with a laser (L) through the support substrate (S), and a step for removing the support substrate (S) and the end of the sub-module (20).

Description

太陽電池モジュール製造方法Solar module manufacturing method
　本発明は、太陽電池モジュール製造方法に関する。 The present invention relates to a solar cell module manufacturing method.
　複数の太陽電池セルを接続してなる太陽電池モジュールが広く利用されている。太陽電池モジュールの製造方法として、基板の上にソルダペーストで導電パターンを形成し、この導電パターンに合わせて各太陽電池セルを配置することによって、複数の太陽電池セルを接続した太陽電池モジュールを得る太陽電池モジュール製造方法が提案されている（例えば、特許文献１参照）。 Solar cell modules made by connecting multiple solar cells are widely used. As a method for manufacturing a solar cell module, a conductive pattern is formed on a substrate using solder paste, and each solar cell is arranged in accordance with this conductive pattern, thereby obtaining a solar cell module in which a plurality of solar cells are connected. A solar cell module manufacturing method has been proposed (for example, see Patent Document 1).
特開２０１２－５０２４６５号公報Japanese Patent Application Publication No. 2012-502465
　ソルダペーストは、一度太陽電池セルに接触すると太陽電池セルに付着してしまうため、太陽電池セルの位置決めをやり直すことができない。特許文献１のように剛性を有する太陽電池セルであれば、例えば吸着パッドで吸着するような方法で比較的容易に空中（基板の上方）に保持することができるので、基板に対して比較的精度よく位置決めを行うことができる。 Once the solder paste comes into contact with the solar cell, it will adhere to the solar cell, making it impossible to reposition the solar cell. If the solar cell is rigid as in Patent Document 1, it can be held in the air (above the substrate) relatively easily by, for example, adsorption with a suction pad. Positioning can be performed with high precision.
　可撓性を有するシートの間に可撓性を有する複数の太陽電池サブモジュールを挟み込んで封止することにより、可撓性を有する太陽電池モジュールを形成することも検討される。しかしながら、可撓性に優れる太陽電池を空中に保持してソルダペースト等に対して位置決めすることは容易ではない。そこで、本発明は、可撓性を有するサブモジュールを正確に配置できる太陽電池モジュール製造方法を提供することを課題とする。 It is also being considered to form a flexible solar cell module by sandwiching and sealing a plurality of flexible solar cell submodules between flexible sheets. However, it is not easy to hold a highly flexible solar cell in the air and position it relative to solder paste or the like. Therefore, an object of the present invention is to provide a solar cell module manufacturing method that allows flexible submodules to be placed accurately.
　本発明の一態様に係る太陽電池モジュール製造方法は、シート状の基材と、前記基材の上に並んで配設され、それぞれ光電変換を行う複数のサブモジュールと、を備える太陽電池モジュールの製造方法であって、複数の透明な支持基板の上にそれぞれ光電変換を行うサブモジュールを形成する工程と、位置をずらして繰り返し行われ、前記基材の上に前記サブモジュールを１枚ずつ配設する工程と、を備え、前記サブモジュールを１枚ずつ配設する工程は、前記サブモジュールを前記支持基板ごと前記支持基板を上にして前記基材の上に載置する工程と、前記支持基板を通して前記サブモジュールにレーザを照射することにより前記サブモジュールの端部を切断する工程と、前記支持基板及び前記サブモジュールの端部を除去する工程と、を含む。 A solar cell module manufacturing method according to one aspect of the present invention includes a sheet-like base material and a plurality of sub-modules that are arranged in line on the base material and each perform photoelectric conversion. The manufacturing method includes a step of forming sub-modules each performing photoelectric conversion on a plurality of transparent support substrates, and repeating the step of shifting the position and disposing the sub-modules one by one on the base material. The step of arranging the sub-modules one by one includes the step of placing the sub-modules together with the supporting substrate on the base material with the supporting substrate facing upward; The method includes the steps of cutting an end of the submodule by irradiating the submodule with a laser through the substrate, and removing the support substrate and the end of the submodule.
　上述の太陽電池モジュール製造方法では、前記サブモジュールを前記基材の上に載置する工程において、前記サブモジュールの端部を先に配設されている前記サブモジュールの端部に重ね、前記サブモジュールの端部を切断する工程において、先に配設されている前記サブモジュールの端部に重ねられている側の端部を切除してもよい。 In the above solar cell module manufacturing method, in the step of placing the submodule on the base material, the end of the submodule is overlapped with the end of the previously disposed submodule, and the submodule is placed on the substrate. In the step of cutting the end of the module, the end that overlaps the end of the previously disposed sub-module may be cut off.
　上述の太陽電池モジュール製造方法は、前記基材の上に前記サブモジュールの間を接続する接続部材を配設する工程をさらに備えてもよい。 The solar cell module manufacturing method described above may further include a step of disposing a connecting member connecting the sub-modules on the base material.
　上述の太陽電池モジュール製造方法において、前記サブモジュールを形成する工程は、前記支持基板の一方の主面に透明な樹脂フィルムを形成する工程と、前記樹脂フィルムに第１電極層を積層する工程と、第１方向に延び、前記第１電極層を切断する第１分離溝を形成する工程と、前記第１電極層に光電変換を行う発電層を積層する工程と、前記第１分離溝の前記第１方向と交差する第２方向第１の側に、前記第１方向に延び、前記発電層を切断する第２分離溝を形成する工程と、前記発電層に第２電極層を積層する工程と前記第２分離溝の前記第２方向第１の側に、前記第１方向に延び、前記発電層及び前記第２電極層のうち少なくとも前記第２電極層を切断する第３分離溝を形成する工程と、を有し、前記サブモジュールを前記基材の上に載置する工程において、前記サブモジュールの前記第２方向第１の側の端部を先に配設されている前記サブモジュールの上に重ねてもよい。 In the solar cell module manufacturing method described above, the step of forming the submodule includes a step of forming a transparent resin film on one main surface of the support substrate, and a step of laminating a first electrode layer on the resin film. , forming a first separation groove extending in a first direction and cutting the first electrode layer; laminating a power generation layer that performs photoelectric conversion on the first electrode layer; forming a second separation groove extending in the first direction and cutting the power generation layer on a first side in a second direction intersecting the first direction; and laminating a second electrode layer on the power generation layer. and a third separation groove extending in the first direction and cutting at least the second electrode layer of the power generation layer and the second electrode layer is formed on the first side of the second separation groove in the second direction. and, in the step of placing the sub-module on the base material, the sub-module is arranged such that the end of the sub-module on the first side in the second direction is placed first. It may be layered on top of the .
　本発明に係る太陽電池モジュール製造方法によれば、可撓性を有するサブモジュールを正確に配置できる。 According to the solar cell module manufacturing method according to the present invention, flexible submodules can be accurately arranged.
本発明の一実施形態に係る太陽電池モジュール製造方法の手順を示すフローチャートである。1 is a flowchart showing the steps of a solar cell module manufacturing method according to an embodiment of the present invention. 図１の太陽電池モジュール製造方法によって製造される太陽電池モジュールの構成を示す模式断面図である。2 is a schematic cross-sectional view showing the configuration of a solar cell module manufactured by the solar cell module manufacturing method of FIG. 1. FIG. 図１のサブモジュール形成工程で形成されるサブモジュールの構成を示す模式断面図である。FIG. 2 is a schematic cross-sectional view showing the configuration of a submodule formed in the submodule forming step of FIG. 1. FIG. 図１のサブモジュール形成工程の詳細な手順を示すフローチャートである。2 is a flowchart showing a detailed procedure of the submodule forming process of FIG. 1. FIG. 図１のサブモジュール配設工程の詳細な手順を示すフローチャートである。2 is a flowchart showing a detailed procedure of the submodule arrangement process of FIG. 1. FIG. 図５のサブモジュール切断工程を説明する模式断面図である。FIG. 6 is a schematic cross-sectional view illustrating the submodule cutting process of FIG. 5. FIG.
　以下、本発明の実施形態について、図面を参照しながら説明する。なお、図面における種々部材の寸法は、便宜上、見やすいように調整されている。図１は、本発明の一実施形態に係る太陽電池モジュール製造方法の手順を示すフローチャートである。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the dimensions of various members in the drawings have been adjusted for convenience and ease of viewing. FIG. 1 is a flowchart showing the steps of a solar cell module manufacturing method according to an embodiment of the present invention.
　図１に示す本発明の一実施形態に係る太陽電池モジュール製造方法は、図２に示すように、シート状の基材１０と、基材１０の上に並んで配設され、それぞれ光電変換を行う複数のサブモジュール２０と、を備える太陽電池モジュール１を製造する方法である。本実施形態の太陽電池モジュール製造方法は、図３に示すように、複数の透明な支持基板Ｓの上にそれぞれサブモジュール２０を形成する工程（ステップＳ１：サブモジュール形成工程）と、位置をずらして繰り返し行われ、基材の上に光電変換を行うサブモジュール２０を１枚ずつ配設する工程（ステップＳ２：サブモジュール配設工程）と、必要な数のサブモジュール２０の配設が完了したか否かを確認する工程（ステップＳ３：サブモジュール配設確認工程）と、を備える。図１の太陽電池モジュール製造方法は、必要な数のサブモジュール２０を配設し終えるまで、ステップＳ２のサブモジュール配設工程を繰り返す。 As shown in FIG. 2, the method for manufacturing a solar cell module according to an embodiment of the present invention shown in FIG. This is a method of manufacturing a solar cell module 1 including a plurality of sub-modules 20 that perform the following steps. As shown in FIG. 3, the solar cell module manufacturing method of the present embodiment includes a step of forming each submodule 20 on a plurality of transparent support substrates S (step S1: submodule forming step), and a step of shifting the position. The step of arranging the sub-modules 20 that perform photoelectric conversion on the base material one by one (step S2: sub-module arrangement step) and the arrangement of the required number of sub-modules 20 are completed. (step S3: submodule arrangement confirmation step). In the solar cell module manufacturing method of FIG. 1, the sub-module arrangement process of step S2 is repeated until the required number of sub-modules 20 have been arranged.
　図１の太陽電池モジュール製造方法によって製造される太陽電池モジュール１は、図２に示すように、基材１０と、基材１０の上に並んで配設される複数のサブモジュール２０と、基材１０とサブモジュール２０の間に配設され、隣接するサブモジュール２０の間を接続する複数の接続部材３０と、を備える。太陽電池モジュール１は、基材１０と反対側から入射する光のエネルギを電力に変換する。太陽電池モジュール１は、例えばサブモジュール２０を一列に接続したいわゆるストリングのように、より上位のモジュールに組み込まれるサブモジュールであってもよい。 As shown in FIG. 2, the solar cell module 1 manufactured by the solar cell module manufacturing method of FIG. A plurality of connection members 30 are provided between the material 10 and the submodules 20 and connect the adjacent submodules 20. The solar cell module 1 converts the energy of light incident from the side opposite to the base material 10 into electric power. The solar cell module 1 may be a submodule that is incorporated into a higher-level module, such as a so-called string in which submodules 20 are connected in a row.
　基材１０は、複数のサブモジュール２０を支持する構造部材である。基材１０としては、例えば樹脂製シートを用いることができる。 The base material 10 is a structural member that supports a plurality of submodules 20. As the base material 10, for example, a resin sheet can be used.
　サブモジュール２０は、第１方向（紙面奥行方向）に延在する帯状に形成され、第１方向と交差する第２方向（紙面左右方向）に並んで配設され、電気的に直列に接続される複数のサブセルＣをそれぞれ有する。サブモジュール２０は、第２方向第１の側（図２左側）の端部を隣接するサブモジュール２０の第２方向第２の側（図２右側）の端部の受光面側（紙面上側）に重ねて配置される。なお、図では分かりやすいよう各構成要素の厚みを大きくしているため、サブモジュール２０が基材１０に対して傾斜しているように見えるが、実際の各層の厚みは非常に小さいため、サブモジュール２０は基材１０に密着して平行に配置される。 The sub-modules 20 are formed in a band shape extending in a first direction (depth direction in the paper), are arranged side by side in a second direction (horizontal direction in the paper) intersecting the first direction, and are electrically connected in series. Each cell has a plurality of subcells C. The sub-module 20 has an end on the first side in the second direction (left side in FIG. 2) and a light-receiving surface side (upper side in the paper) of the end on the second side in the second direction (right side in FIG. 2) of the adjacent sub-module 20. are placed on top of each other. In addition, in the figure, the thickness of each component is increased for ease of understanding, so it appears that the sub-module 20 is inclined with respect to the base material 10, but the actual thickness of each layer is very small, so the sub-module 20 is The module 20 is arranged in close contact with and parallel to the base material 10.
　サブモジュール２０は、透明な樹脂フィルム２１と、第１電極層２２と、発電層２３と、第２電極層２４とを受光面側からこの順番に有する。サブモジュール２０は、これらの層の一部を第１方向に延びる複数の第１分離溝２５、複数の第２分離溝２６及び複数の第３分離溝２７によって切断することにより、それぞれ第１方向に延在する帯状に形成され、第１方向と交差する第２方向に並ぶ複数のサブセルＣと、サブセルＣの間にそれぞれ形成され、隣接するサブセルＣを電気的に接続する複数の中間接続部Ｍと、第２方向第１の側の端部に形成される無効領域Ｒと、第２方向第２の側の端部に形成される外部接続領域Ｅと、を画定する。なお、簡略化して示す図２において、サブモジュール２０が有するサブセルＣの数は３つであるが、実際にはより多数のサブセルＣを有し得る。 The sub-module 20 has a transparent resin film 21, a first electrode layer 22, a power generation layer 23, and a second electrode layer 24 in this order from the light-receiving surface side. The sub-module 20 is constructed by cutting a portion of these layers with a plurality of first separation grooves 25, a plurality of second separation grooves 26, and a plurality of third separation grooves 27 extending in the first direction, respectively. A plurality of subcells C formed in a band shape extending in the direction and lined up in a second direction intersecting the first direction, and a plurality of intermediate connecting portions each formed between the subcells C and electrically connecting adjacent subcells C. M, an invalid region R formed at the end on the first side in the second direction, and an external connection region E formed at the end on the second side in the second direction. Although the submodule 20 has three subcells C in FIG. 2 shown in a simplified manner, it may actually have a larger number of subcells C.
　より詳しくは、第１分離溝２５、第２分離溝２６及び第３分離溝２７は、第２方向第２の側から第１の側にこの順番で接近するよう、等しいピッチで形成される。第１分離溝２５は第１電極層２２を切断し、第２分離溝２６は発電層２３を切断し、第３分離溝２７は発電層２３及び第２電極層２４のうち少なくとも第２電極層２４を切断する。これにより、第１分離溝２５はサブセルＣの第２方向第１の側の端縁を画定し、第３分離溝はサブセルＣの有効領域の第２方向第２の側の端縁を画定し、第２分離溝２６その中に第２電極層２４が延在することによるサブセルＣ間の電気的接続を提供する。つまり、第１電極層２２、発電層２３及び第２電極層２４の全てが連続して存在する範囲が、一体的に電力を発生させる１つのサブセルＣであり、サブセルＣの間の第１分離溝２５、第２分離溝２６及び第３分離溝２７が互いに接近して形成される範囲が中間接続部Ｍである。 More specifically, the first separation groove 25, the second separation groove 26, and the third separation groove 27 are formed at equal pitches so that they approach the first side in this order from the second side in the second direction. The first separation groove 25 cuts the first electrode layer 22, the second separation groove 26 cuts the power generation layer 23, and the third separation groove 27 cuts the power generation layer 23 and the second electrode layer 24. Cut 24. As a result, the first separation groove 25 defines the edge of the subcell C on the first side in the second direction, and the third separation groove defines the edge of the effective area of the subcell C on the second side in the second direction. , a second isolation trench 26 providing electrical connection between the subcells C by virtue of which a second electrode layer 24 extends therein. In other words, the range in which the first electrode layer 22, the power generation layer 23, and the second electrode layer 24 all exist continuously is one subcell C that integrally generates electric power, and the first separation between the subcells C is An intermediate connection portion M is a region where the groove 25, the second separation groove 26, and the third separation groove 27 are formed close to each other.
　サブモジュール２０において、無効領域Ｒは、なくてもよいが、サブモジュール２０の第２方向第１の側の端部を切断する際に第２方向第１の側の末端のサブセルＣを誤って破断しないためのマージンとして設けられ得る。 In the sub-module 20, the invalid region R may not be present, but when cutting the end of the sub-module 20 on the first side in the second direction, the end subcell C on the first side in the second direction may be accidentally cut. It may be provided as a margin to prevent breakage.
　一方、外部接続領域Ｅは、第２方向第２の側の端部のサブセルＣの第１電極層２２を隣接するサブモジュール２０又は太陽電池モジュール１の外部回路に電気的に接続するための中継端子として第２電極層２４を提供する。 On the other hand, the external connection area E is a relay for electrically connecting the first electrode layer 22 of the subcell C at the end on the second side in the second direction to the adjacent submodule 20 or the external circuit of the solar cell module 1. A second electrode layer 24 is provided as a terminal.
　接続部材３０は、受光面側に重ねられるサブモジュール２０の第２方向第１の側の末端のサブセルＣの第２電極層２４と、受光面と反対側に重ねられるサブモジュール２０の外部接続領域Ｅの第２電極層２４と、をそれぞれ接続する。接続部材３０は、例えば導電性接着剤等により形成される。 The connection member 30 connects the second electrode layer 24 of the subcell C at the end of the first side in the second direction of the submodule 20 that is stacked on the light receiving surface side, and the external connection area of the submodule 20 that is stacked on the side opposite to the light receiving surface. and the second electrode layer 24 of E are connected to each other. The connection member 30 is made of, for example, a conductive adhesive.
　図１の太陽電池モジュール製造方法のステップＳ１のサブモジュール形成工程は、図４に詳しく示すように、支持基板Ｓの一方の主面に透明な樹脂フィルム２１を形成する工程（ステップＳ１１：樹脂フィルム形成工程）と、樹脂フィルム２１に第１電極層２２を積層する工程（ステップＳ１２：第１電極層積層工程）と、第１方向に延び、第１電極層２２を切断する第１分離溝２５を形成する工程（ステップＳ１３：第１分離溝形成工程）と、第１電極層２２に光電変換を行う発電層２３を積層する工程（ステップＳ１４：発電層積層工程）と、第１分離溝２５の第２方向第１の側に、第１方向に延び、発電層２３を切断する第２分離溝２６を形成する工程（ステップＳ１５：第２分離溝形成工程）と、発電層２３に第２電極層２４を積層する工程（ステップＳ１６：第２電極層積層工程）と、第２分離溝２６の第２方向第１の側に、第１方向に延び、発電層２３及び第２電極層２４を切断する第３分離溝２７を形成する工程（ステップＳ１７：第３分離溝形成工程）と、を有し得る。 As shown in detail in FIG. 4, the submodule forming step in step S1 of the solar cell module manufacturing method in FIG. formation step), a step of laminating the first electrode layer 22 on the resin film 21 (step S12: first electrode layer lamination step), and a first separation groove 25 extending in the first direction and cutting the first electrode layer 22. (step S13: first separation groove forming step), a step of laminating a power generation layer 23 that performs photoelectric conversion on the first electrode layer 22 (step S14: power generation layer lamination step), and a step of forming the first separation groove 25. forming a second separation groove 26 extending in the first direction and cutting the power generation layer 23 on the first side in the second direction (step S15: second separation groove formation step); In the step of laminating the electrode layer 24 (step S16: second electrode layer lamination step), the power generation layer 23 and the second electrode layer 24 are formed on the first side in the second direction of the second separation groove 26 and extend in the first direction. (step S17: third separation groove forming step).
　ステップＳ１１の樹脂フィルム形成工程では、例えばガラス板等の支持基板Ｓに、例えばポリイミド、ポリアミド、ポリエチレンテレフタレート等の樹脂からなる樹脂フィルム２１を積層する。樹脂フィルム２１は、太陽電池モジュール１の強度を担保する構造部材である。樹脂フィルム２１は、例として、ポリアミド酸溶液を塗工する工程と、前記ポリアミド酸溶液の塗膜を加熱する工程とを含み、支持基板Ｓ上でポリイミドを生成する方法によって積層することが好ましい。これにより、厚みが小さく平滑な樹脂フィルム２１を形成できる。 In the resin film forming step of step S11, a resin film 21 made of a resin such as polyimide, polyamide, polyethylene terephthalate, etc. is laminated on a support substrate S such as a glass plate. The resin film 21 is a structural member that ensures the strength of the solar cell module 1. The resin film 21 is preferably laminated by a method of producing polyimide on the support substrate S, including, for example, a step of applying a polyamic acid solution and a step of heating the coating film of the polyamic acid solution. Thereby, a thin and smooth resin film 21 can be formed.
　樹脂フィルム２１の厚みの下限としては、３μｍが好ましく、１０μｍがより好ましい。一方、樹脂フィルム２１の厚みの上限としては、５０μｍが好ましく、３０μｍがより好ましい。樹脂フィルム２１の厚みを前記下限以上とすることによって、サブモジュール２０の強度を担保することができる。また、樹脂フィルム２１の厚みを前記上限以下とすることによって、サブモジュール２０に可撓性を付与することができる。 The lower limit of the thickness of the resin film 21 is preferably 3 μm, more preferably 10 μm. On the other hand, the upper limit of the thickness of the resin film 21 is preferably 50 μm, more preferably 30 μm. By setting the thickness of the resin film 21 to be equal to or greater than the lower limit, the strength of the submodule 20 can be ensured. Moreover, flexibility can be imparted to the submodule 20 by making the thickness of the resin film 21 less than or equal to the above upper limit.
　ステップＳ１２の第１電極層積層工程では、例えばスパッタリング法、真空蒸着法などの方法により、樹脂フィルム２１に第１電極層２２を積層する。第１電極層２２は、発電層２３で生成された第１の電荷を収集して隣接するサブセルＣ又は外部に出力する。第１電極層２２は、透明導電性酸化物（ＴＣＯ：Transparent Conductive Oxide）から形成される。第１電極層２２を形成する透明導電性酸化物としては、例えば、酸化インジウム、酸化スズ、酸化亜鉛、酸化チタン及びそれらの複合酸化物等を用いることができる。これらの中でも、酸化インジウムを主成分とするインジウム系複合酸化物が好ましい。高い導電率と透明性の観点からは、インジウム酸化物が特に好ましい。さらに、信頼性又はより高い導電率を確保するために、インジウム酸化物にドーパントを添加することが好ましい。ドーパントとしては、例えば、Ｓｎ、Ｗ、Ｚｎ、Ｔｉ、Ｃｅ、Ｚｒ、Ｍｏ、Ａｌ、Ｇａ、Ｇｅ、Ａｓ、Ｓｉ、Ｓ等が挙げられる。特に好適な例として、インジウム酸化物にスズが添加されたＩＴＯ（Indium Tin Oxide）が広く知られている。 In the first electrode layer lamination step of step S12, the first electrode layer 22 is laminated on the resin film 21 by a method such as a sputtering method or a vacuum evaporation method. The first electrode layer 22 collects the first charge generated in the power generation layer 23 and outputs it to the adjacent subcell C or to the outside. The first electrode layer 22 is formed from transparent conductive oxide (TCO). As the transparent conductive oxide forming the first electrode layer 22, for example, indium oxide, tin oxide, zinc oxide, titanium oxide, and composite oxides thereof can be used. Among these, indium-based composite oxides containing indium oxide as a main component are preferred. Indium oxide is particularly preferred from the viewpoint of high conductivity and transparency. Furthermore, it is preferred to add dopants to the indium oxide to ensure reliability or higher conductivity. Examples of the dopant include Sn, W, Zn, Ti, Ce, Zr, Mo, Al, Ga, Ge, As, Si, and S. As a particularly suitable example, ITO (Indium Tin Oxide), which is indium oxide to which tin is added, is widely known.
　第１電極層２２の厚みの下限としては、５ｎｍが好ましく、１０ｎｍがより好ましい。一方、第１電極層２２の厚みの上限としては、１００ｎｍが好ましく、５０ｎｍがより好ましい。第１電極層２２の厚みを前記下限以上とすることによって、電気抵抗を小さくすることができるのでサブモジュール２０光電変換効率を向上できる。また、第１電極層２２の厚みを前記上限以下とすることによって、不必要なコスト増や可撓性の低下を防止できる。第１電極層２２は、例えば多結晶ＩＴＯ層と非晶質ＩＴＯ層との積層構造等の多層構造を有してもよい。 The lower limit of the thickness of the first electrode layer 22 is preferably 5 nm, more preferably 10 nm. On the other hand, the upper limit of the thickness of the first electrode layer 22 is preferably 100 nm, more preferably 50 nm. By setting the thickness of the first electrode layer 22 to be equal to or greater than the lower limit, the electrical resistance can be reduced, and the photoelectric conversion efficiency of the submodule 20 can be improved. Further, by setting the thickness of the first electrode layer 22 to be equal to or less than the upper limit, unnecessary increases in cost and decreases in flexibility can be prevented. The first electrode layer 22 may have a multilayer structure, such as a stacked structure of a polycrystalline ITO layer and an amorphous ITO layer, for example.
　ステップＳ１３の第１分離溝形成工程では、レーザアブレーションにより第１電極層２２を平面視で第１方向に延びる複数の平行な線状に除去することによって、第１分離溝２５を形成する。照射するレーザとしては、例えばＴＨＧ（第３高調波）レーザ等を用いることができる。第１分離溝２５を形成するレーザの強度は、第１電極層２２をサブセルＣ間で確実に絶縁でき、且つ樹脂フィルム２１のダメージをできるだけ小さくできるように設定される。 In the first separation groove forming step of step S13, the first separation groove 25 is formed by removing the first electrode layer 22 in a plurality of parallel lines extending in the first direction in plan view using laser ablation. As the laser for irradiation, for example, a THG (third harmonic) laser or the like can be used. The intensity of the laser beam used to form the first separation grooves 25 is set so that the first electrode layer 22 can be reliably insulated between the subcells C and damage to the resin film 21 can be minimized.
　第１分離溝２５の幅としては、レーザアブレーションにより形成することを考慮すると、１０μｍ以上２００μｍ以下とされることが好ましく、２０μｍ以上１００μｍ以下とされることがより好ましい。これにより、太陽電池サブセル２間の確実な分離と太陽電池サブセル２の有効面積の確保とが可能となる。 The width of the first separation groove 25 is preferably 10 μm or more and 200 μm or less, more preferably 20 μm or more and 100 μm or less, considering that it is formed by laser ablation. This makes it possible to ensure reliable separation between the solar cell subcells 2 and to ensure the effective area of the solar cell subcells 2.
　ステップＳ１４の発電層積層工程では、第１電極層２２に光電変換を行う発電層２３を積層する。発電層２３は、第１電荷輸送層と、光電変換層と、第２電荷輸送層とをこの順番に有する多層構造とされ得る。発電層２３は、さらなる機能層を有してもよい。 In the power generation layer lamination step of step S14, a power generation layer 23 that performs photoelectric conversion is laminated on the first electrode layer 22. The power generation layer 23 may have a multilayer structure including a first charge transport layer, a photoelectric conversion layer, and a second charge transport layer in this order. The power generation layer 23 may have further functional layers.
　第１電荷輸送層は、光電変換層で発生する第１の極性の電荷を通過させる層であり、本実施形態では正孔を第１電極層２２に伝達する正孔輸送層（ＨＴＬ）が企図されている。正孔輸送層である第１電荷輸送層は、例えば酸化ニッケル（ＮｉＯ）、酸化銅（Ｃｕ２Ｏ）等の金属酸化物、例えばＰＴＡＡ（Poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)）、Ｓｐｉｒｏ－ＭｅＯＴＡＤ等の有機物から生成され得る。また、第１電荷輸送層は、自己組織化単分子膜（ＳＡＭ：Self-Assembled Monolayers）から形成されてもよい。自己組織化単分子膜からなる第１電荷輸送層は、例えば２ＰＡＣｚ([2-(9H-Carbazol-9-yl)ethyl]phosphonic Acid)、ＭｅＯ－２ＰＡＣｚ（[2-(3,6-Dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic Acid）、Ｍｅ－４ＰＡＣｚ（[4-(3,6-Dimethyl-9H-carbazol-9-yl)butyl]phosphonic Acid）等によって形成され得る。 The first charge transport layer is a layer that allows charges of the first polarity generated in the photoelectric conversion layer to pass through, and in this embodiment, a hole transport layer (HTL) that transmits holes to the first electrode layer 22 is intended. has been done. The first charge transport layer, which is a hole transport layer, is made of a metal oxide such as nickel oxide (NiO) or copper oxide (Cu 2 O), such as PTAA (Poly(bis(4-phenyl)(2,4,6 -trimethylphenyl)amine)), Spiro-MeOTAD, etc. Further, the first charge transport layer may be formed from self-assembled monolayers (SAM). The first charge transport layer made of a self-assembled monolayer is, for example, 2PACz ([2-(9H-Carbazol-9-yl)ethyl]phosphonic Acid), MeO-2PACz ([2-(3,6-Dimethoxy- 9H-carbazol-9-yl)ethyl]phosphonic Acid), Me-4PACz ([4-(3,6-Dimethyl-9H-carbazol-9-yl)butyl]phosphonic Acid), and the like.
　第１電荷輸送層は、例えばスパッタリング法、真空蒸着法などの方法により形成され得る。また、第１電荷輸送層が有機物を含む場合、第１電荷輸送層は例えば有機物の溶液の塗工及び乾燥等の方法により形成され得る。自己組織化単分子膜からなる第１電荷輸送層は、自己組織化単分子膜形成材料を例えばエタノール、イソプロパノール等の有機溶媒に溶解してなる単分子膜形成材料溶液の塗工及び乾燥によって形成され得る。単分子膜形成材料溶液の塗工は、例えばスピンコート法等によって行うことが好ましい。第１電荷輸送層の厚みは、その材料、隣接する層の構成等により大きく異なり得るが、例えば１ｎｍ以上２００ｎｍ以下とすることができ、特に自己組織化単分子膜である場合には材料分子の厚みとされ得る。 The first charge transport layer may be formed by, for example, a sputtering method, a vacuum evaporation method, or the like. Further, when the first charge transport layer contains an organic substance, the first charge transport layer may be formed by, for example, applying a solution of the organic substance and drying the solution. The first charge transport layer consisting of a self-assembled monolayer is formed by coating and drying a monolayer-forming material solution prepared by dissolving the self-assembled monolayer-forming material in an organic solvent such as ethanol or isopropanol. can be done. The monomolecular film forming material solution is preferably applied by, for example, a spin coating method. The thickness of the first charge transport layer can vary greatly depending on its material, the structure of adjacent layers, etc., but can be, for example, 1 nm or more and 200 nm or less, and particularly when it is a self-assembled monolayer, the thickness of the material molecules It can be the thickness.
　光電変換層は、入射光を吸収して光キャリア（電子及び正孔）を生成する。光電変換層は、ペロブスカイト化合物を含む材料から形成され得る。光電変換層に含まれるペロブスカイト化合物としては、１価の有機アンモニウムイオン及びアミジニウム系イオンのうちの少なくとも１種を含む有機原子Ａ、２価の金属イオンを生成する金属原子Ｂ、及びヨウ化物イオンＩ、臭化物イオンＢｒ、塩化物イオンＣｌ、及びフッ化物イオンＦのうちの少なくとも１種を含むハロゲン原子Ｘを含み、ＡＢＸ３で表される化合物を用いることができる。中でも、光電変換層を蒸着法（ドライプロセス）により形成する場合、有機原子ＡとしてはメチルアンモニウムＭＡ（ＣＨ３ＮＨ３）が好ましく、金属原子Ｂとしては鉛Ｐｂが好ましく、ハロゲン原子Ｘとしてはヨウ化物Ｉ、臭化物イオンＢｒ及び塩化物イオンＣｌのうちの少なくとも１つが好ましい。 The photoelectric conversion layer absorbs incident light and generates photocarriers (electrons and holes). The photoelectric conversion layer may be formed from a material containing a perovskite compound. The perovskite compound contained in the photoelectric conversion layer includes an organic atom A containing at least one of a monovalent organic ammonium ion and an amidinium ion, a metal atom B generating a divalent metal ion, and an iodide ion I. , a halogen atom X containing at least one of bromide ion Br, chloride ion Cl, and fluoride ion F, and represented by ABX 3 can be used. Among these, when forming the photoelectric conversion layer by vapor deposition (dry process), the organic atom A is preferably methylammonium MA (CH 3 NH 3 ), the metal atom B is preferably lead Pb, and the halogen atom X is iodine. At least one of compound I, bromide ion Br and chloride ion Cl is preferred.
　具体的に、好ましいペロブスカイト化合物としては、メチルアンモニウムハロゲン化鉛ＭＡＰｂＸ３（ＣＨ３ＮＨ３ＰｂＸ３）、ＭＡＰｂＩ３、ＭＡＰｂＢｒ３、ＭＡＰｂＣｌ３等が挙げられる。なお、ハロゲン原子Ｘとしては複数種類を含んでもよい。ヨウ化物Ｉと他のハロゲン原子Ｘとを含むペロブスカイト化合物としては、例えばメチルアンモニウムヨウ化鉛ＭＡＰｂＩｙＸ（３－ｙ）（ＣＨ３ＮＨ３ＰｂＩｙＸ（３－ｙ））、ＭＡＰｂＩｙＢｒ（３－ｙ）、ＭＡＰｂＩｙＣｌ（３－ｙ）等が挙げられる（ｙは任意の正の整数）。 Specifically, preferred perovskite compounds include methylammonium lead halide MAPbX 3 (CH 3 NH 3 PbX 3 ), MAPbI 3 , MAPbBr 3 , MAPbCl 3 and the like. Note that the halogen atom X may include a plurality of types. Examples of perovskite compounds containing iodide I and other halogen atoms X include methylammonium lead iodide MAPbI y X (3-y) (CH 3 NH 3 PbI y X (3-y) ), MAPbI y Br ( 3-y) , MAPbI y Cl (3-y) , etc. (y is any positive integer).
　ペロブスカイト化合物を含む光電変換層は、ペロブスカイト化合物がメチルアンモニウムハロゲン化鉛（ＭＡＰｂＸ３（ＣＨ３ＮＨ３ＰｂＸ３））である場合、光電変換層は、ハロゲン化鉛（ＰｂＸ２）材料及びハロゲン化メチルアンモニウム（ＭＡＸ）材料を順に製膜し、これらの材料の薄膜を反応温度で反応させることにより形成され得る。例えば、ペロブスカイト化合物がメチルアンモニウムヨウ化鉛（ＭＡＰｂＩｙＸ（３－ｙ）（ＣＨ３ＮＨ３ＰｂＩｙＸ（３－ｙ）））である場合、光電変換層は、例えばハロゲン化鉛（ＰｂＸ２）材料及びヨウ化メチルアンモニウム（ＭＡＩ）材料を順に製膜し、これらの材料の薄膜を反応温度で反応させることにより形成される。また、光電変換層は、例えば液相の塗膜内でペロブスカイト化合物を合成するゾルゲル法、予め合成されたペロブスカイト化合物を含む溶液を塗布する塗布法等の方法によっても形成され得る。 When the perovskite compound is methylammonium lead halide (MAPbX 3 (CH 3 NH 3 PbX 3 )), the photoelectric conversion layer includes a lead halide (PbX 2 ) material and methyl halide. It can be formed by sequentially depositing ammonium (MAX) materials and reacting thin films of these materials at reaction temperatures. For example, when the perovskite compound is methylammonium lead iodide (MAPbI y X (3-y) ( CH 3 NH 3 PbI y It is formed by sequentially depositing a material and a methylammonium iodide (MAI) material and reacting the thin films of these materials at a reaction temperature. The photoelectric conversion layer can also be formed, for example, by a sol-gel method in which a perovskite compound is synthesized within a liquid phase coating film, or a coating method in which a solution containing a pre-synthesized perovskite compound is applied.
　光電変換層の厚みとしては、形成材料等にもよるが、光の吸収率を大きくしつつ、生成する電荷の移動距離を小さくするために、１００ｎｍ以上１０００ｎｍ以下とすることが好ましい。 Although the thickness of the photoelectric conversion layer depends on the forming material, etc., it is preferably 100 nm or more and 1000 nm or less in order to increase the light absorption rate and reduce the migration distance of the generated charges.
　第２電荷輸送層は、光電変換層で発生する第２の極性の電荷を通過させる層であり、本実施形態では電子を第２電極層２４に伝達する電子輸送層（ＥＴＬ）が企図される。電子輸送層である第２電荷輸送層の主材料としては、例えば、ＰＴＡＡ（Poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)）、Ｓｐｉｒｏ－ＭｅＯＴＡＤ、フラーレン等が挙げられる。フラーレンとしては、例えばＣ６０、Ｃ７０、これらの水素化物、酸化物、金属錯体、アルキル基等を付加した誘導体、例えば、ＰＣＢＭ（[6,6]-Phenyl-C61-Butyric Acid Methyl Ester）などが挙げられる。特に第２電荷輸送層をリチウムＬｉを内包させたフラーレンを含む材料から形成することにより、電子の輸送効率を向上することができる。また、第２電荷輸送層は、多層構造を有してもよい。 The second charge transport layer is a layer that allows charges of the second polarity generated in the photoelectric conversion layer to pass through, and in this embodiment, an electron transport layer (ETL) that transmits electrons to the second electrode layer 24 is contemplated. . Examples of the main material of the second charge transport layer, which is an electron transport layer, include PTAA (Poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), Spiro-MeOTAD, fullerene, etc. . Examples of fullerenes include C60, C70, their hydrides, oxides, metal complexes, derivatives with added alkyl groups, etc., such as PCBM ([6,6]-Phenyl-C61-Butyric Acid Methyl Ester). It will be done. In particular, by forming the second charge transport layer from a material containing fullerene containing lithium Li, electron transport efficiency can be improved. Further, the second charge transport layer may have a multilayer structure.
　第２電荷輸送層は、例えばゾルゲル法、塗布法等の方法により形成され得る。第２電荷輸送層の厚みとしては、その材料、隣接する層の構成等により大きく異なり得るが、例えば３ｎｍ以上３０ｎｍ以下とされ得る。 The second charge transport layer can be formed, for example, by a sol-gel method, a coating method, or the like. The thickness of the second charge transport layer may vary greatly depending on its material, the structure of adjacent layers, etc., but may be, for example, 3 nm or more and 30 nm or less.
　発電層積層工程が塗工工程を含む場合、支持基板Ｓの端部まで均一に発電層２３を形成することが難しい。ペロブスカイト化合物を含む光電変換層を有する発電層２３は、電圧が大きくないため、サブセルＣの第２方向の幅を小さくすることが望まれる。このため、第２方向の末端のサブセルＣに塗工不良による欠陥があると、そのサブセルＣにおいて電流律速を生じ得るため、支持基板Ｓの第２方向の両端にはサブセルＣを形成しないことが望ましい。このため、サブモジュール２０の第２方向第１の側の端部は一定の幅の無効領域Ｒが形成され、最終的には、後述するように無効領域Ｒの幅をできるだけ小さくするよう無効領域Ｒの少なくとも一部が切除される。一方、サブモジュール２０の第２方向第２の側の端部に形成される外部接続領域Ｅは、サブモジュール２０の電気的接続のために一定の幅が必要であり、発電層２３に欠陥があっても問題がないため、サブモジュール２０から切除されることなく使用される。 When the power generation layer lamination process includes a coating process, it is difficult to uniformly form the power generation layer 23 all the way to the edge of the support substrate S. Since the power generation layer 23 having a photoelectric conversion layer containing a perovskite compound does not have a large voltage, it is desirable to reduce the width of the subcell C in the second direction. Therefore, if there is a defect in the subcell C at the end in the second direction due to poor coating, current rate limiting may occur in that subcell C, so it is recommended not to form the subcell C at both ends of the support substrate S in the second direction. desirable. Therefore, an invalid region R having a constant width is formed at the end of the sub-module 20 on the first side in the second direction, and ultimately, as will be described later, the invalid region R is formed so that the width of the invalid region R is made as small as possible. At least a portion of R is excised. On the other hand, the external connection area E formed at the end of the second side of the submodule 20 in the second direction requires a certain width for electrical connection of the submodule 20, and the power generation layer 23 is free from defects. Since there is no problem even if it exists, it is used without being removed from the submodule 20.
　ステップＳ１５の第２分離溝形成工程では、レーザアブレーションにより、発電層２３を複数の平行な線状に除去することによって複数の第２分離溝２６を形成する。これにより、第２電極層２４が第２分離溝２６の中に延在し、第１電極層２２と接続される。第２分離溝２６の幅は、第１分離溝２５の幅と同様とされ得るが、第１電極層２２への第２電極層２４の接続を確実にするために第１分離溝２５の幅よりも大きくてもよい。 In the second separation groove forming step of step S15, a plurality of second separation grooves 26 are formed by removing the power generation layer 23 in a plurality of parallel lines by laser ablation. Thereby, the second electrode layer 24 extends into the second separation groove 26 and is connected to the first electrode layer 22 . The width of the second separation groove 26 may be the same as the width of the first separation groove 25, but in order to ensure the connection of the second electrode layer 24 to the first electrode layer 22, the width of the first separation groove 25 is May be larger than .
　ステップＳ１６の第２電極層積層工程では、スパッタリング、めっき等の方法により金属材料を積層することによって、又は金属粒子を含む導電性組成物の塗工及び焼成によって第２電極層２４を形成する。第２電極層２４は、第１電極層２２と対をなす電極である。金属を含む第２電極層２４は、発電層２３を透過した光を反射して発電層２３に再度入射させることにより光電変換効率を向上し得る。第２電極層２４の厚みの下限としては、１０ｎｍが好ましく、２０ｎｍがより好ましい。一方、第２電極層２４の厚みの上限としては、２００ｎｍが好ましく、１００ｎｍがより好ましい。第２電極層２４の厚みを前記下限以上とすることによって、集電抵抗を十分に小さくできる。また、第２電極層２４の厚みを前記上限以下とすることによって、第３分離溝２７の形成が容易となる。 In the second electrode layer lamination step of step S16, the second electrode layer 24 is formed by laminating metal materials by a method such as sputtering or plating, or by coating and baking a conductive composition containing metal particles. The second electrode layer 24 is an electrode that makes a pair with the first electrode layer 22. The second electrode layer 24 containing metal can improve photoelectric conversion efficiency by reflecting the light that has passed through the power generation layer 23 and making it enter the power generation layer 23 again. The lower limit of the thickness of the second electrode layer 24 is preferably 10 nm, more preferably 20 nm. On the other hand, the upper limit of the thickness of the second electrode layer 24 is preferably 200 nm, more preferably 100 nm. By setting the thickness of the second electrode layer 24 to be equal to or greater than the lower limit, current collection resistance can be made sufficiently small. Further, by setting the thickness of the second electrode layer 24 to be less than or equal to the above upper limit, the third separation groove 27 can be easily formed.
　ステップＳ１７の第３分離溝形成工程では、レーザアブレーションにより、発電層２３及び第２電極層２４を複数の平行な線状に除去することによって、複数の第３分離溝２７を形成する。第３分離溝２７の幅は、第１分離溝２５の幅と同様とされ得る。 In the third separation groove forming step of step S17, a plurality of third separation grooves 27 are formed by removing the power generation layer 23 and the second electrode layer 24 in a plurality of parallel lines by laser ablation. The width of the third separation groove 27 may be the same as the width of the first separation groove 25.
　図１の太陽電池モジュール製造方法のステップＳ２のサブモジュール配設工程は、図５に詳しく示すように、基材１０の上に接続部材３０を配設する工程（ステップＳ２１：接続部材配設工程）と、サブモジュール２０を支持基板Ｓごと支持基板Ｓを上にして基材１０の上に載置する工程（ステップＳ２２：サブモジュール載置工程）と、支持基板Ｓを通してサブモジュール２０にレーザを照射することによりサブモジュール２０の端部を切断する工程（ステップＳ２３：サブモジュール切断工程）と、支持基板Ｓ及びサブモジュール２０の端部を除去する工程（ステップＳ２４：支持基板除去工程）と、を含む。 As shown in detail in FIG. 5, the submodule disposing step in step S2 of the solar cell module manufacturing method in FIG. ), a step of placing the sub-module 20 together with the supporting substrate S on the base material 10 with the supporting substrate S facing upward (step S22: sub-module mounting step), and a step of applying a laser to the sub-module 20 through the supporting substrate S. A step of cutting the end portion of the sub-module 20 by irradiation (step S23: sub-module cutting step), a step of removing the end portion of the support substrate S and the sub-module 20 (step S24: support substrate removal step), including.
　ステップＳ２１の接続部材配設工程では、基材１０の上に、次に配設するサブモジュール２０に対応する位置に、接続部材３０を配設する。つまり、最初のサブモジュール２０を配設するときには第２方向第１の側の端部のサブセルＣ及び外部接続領域Ｅに対応する位置にそれぞれ接続部材３０を配設し、以降のサブモジュール２０を配設するときには外部接続領域Ｅに対応する位置に接続部材を配設する。 In the connecting member disposing step of step S21, the connecting member 30 is disposed on the base material 10 at a position corresponding to the submodule 20 to be disposed next. That is, when disposing the first sub-module 20, the connection members 30 are disposed at positions corresponding to the sub-cell C and the external connection area E at the end on the first side in the second direction, and the subsequent sub-modules 20 are When disposing, the connection member is disposed at a position corresponding to the external connection area E.
　ステップＳ２２のサブモジュール載置工程では、支持基板Ｓを上にして第２方向第１の側の末端のサブセルＣ及び第２方向第２の側の外部接続領域Ｅが接続部材３０の上に配置されるようサブモジュール２０を載置する。ここで、サブモジュール２０の端部を先に配設されているサブモジュール２０の端部に重ねることによって、ステップＳ２４の支持基板除去工程で除去すべき無効領域Ｒが接続部材３０に接着されて除去できなくなることを防止できる。さらに、新しく載置するサブモジュール２０の２方向第１の側の末端のサブセルＣが先に配置されているサブモジュール２０の外部接続領域Ｅに重なるよう配置すれば、太陽電池モジュール１において受光可能なサブセルＣの面積を増大して光電変換効率を向上できる。 In the submodule mounting step of step S22, the subcell C at the end on the first side in the second direction and the external connection area E on the second side in the second direction are placed on the connection member 30 with the support substrate S facing upward. Place the sub-module 20 so that the Here, by overlapping the end of the sub-module 20 with the end of the previously disposed sub-module 20, the ineffective area R to be removed in the support substrate removal step of step S24 is adhered to the connection member 30. This can prevent the problem from becoming impossible to remove. Furthermore, if the subcell C at the end of the first side in two directions of the newly placed submodule 20 is placed so as to overlap the external connection area E of the previously placed submodule 20, light can be received in the solar cell module 1. The photoelectric conversion efficiency can be improved by increasing the area of the subcell C.
　ステップＳ２３のサブモジュール切断工程では、図６に示すように、サブモジュール２０の第二方向第１の側の末端のサブセルＣよりもさらに第２方向第１の側に支持基板Ｓを通してレーザＬを照射することにより、サブモジュール２０の第２方向第１の側の端部、つまり下側のサブモジュール２０に重ねられている側の端部を切断する。このレーザＬの照射を第３分離溝２７の上に行えば、下側のサブモジュール２０へのダメージを防止しつつ、上側のサブモジュール２０を比較的容易に切断できる。 In the sub-module cutting process of step S23, as shown in FIG. By irradiating, the end portion of the sub-module 20 on the first side in the second direction, that is, the end portion of the side overlapped with the lower sub-module 20 is cut. By irradiating the third separation groove 27 with the laser L, the upper sub-module 20 can be cut relatively easily while preventing damage to the lower sub-module 20.
　ステップＳ２４の支持基板除去工程では、サブモジュール２０の切り離された第２方向第１の側の端部とともに、支持基板Ｓを除去する。これにより、サブモジュール２０の無効領域Ｒを小さくし、太陽電池モジュール１の有効面積を増大して光電変換効率を向上できる。 In the support substrate removal step of step S24, the support substrate S is removed together with the separated end of the sub-module 20 on the first side in the second direction. Thereby, the ineffective area R of the sub-module 20 can be reduced, the effective area of the solar cell module 1 can be increased, and the photoelectric conversion efficiency can be improved.
　本実施形態に係る太陽電池モジュール製造方法は、サブモジュール２０を支持基板Ｓで支持する状態で基材１０及び接続部材３０の上に配設するため、可撓性を有するサブモジュール２０を平坦な状態に保持した状態で位置決めできるので、サブモジュール２０を容易且つ正確に配設することができる。 In the solar cell module manufacturing method according to the present embodiment, since the submodule 20 is supported by the support substrate S and disposed on the base material 10 and the connection member 30, the flexible submodule 20 is flattened. Since the sub-module 20 can be positioned while being held in this state, the sub-module 20 can be easily and accurately disposed.
　以上、本発明の実施形態について説明したが、本発明は上述した実施形態に限定されることなく、種々の変更及び変形が可能である。例として、本実施形態に係る太陽電池モジュール製造方法では、基材上に全てのサブモジュールに対応する全ての接続部材をまとめて配設し、サブモジュールの載置、サブモジュールの端部の切断及び支持基板の除去を必要な回数だけ繰り返してもよい。また、実施形態に係る太陽電池モジュール製造方法では、サブモジュールの切除される部分だけを先に配置したサブモジュールに重ねて、最終的に重複なく平面的にサブモジュールを並べた太陽電池モジュールを製造してもよい。 Although the embodiments of the present invention have been described above, the present invention is not limited to the embodiments described above, and various changes and modifications can be made. For example, in the solar cell module manufacturing method according to the present embodiment, all connection members corresponding to all submodules are arranged on the base material, the submodules are placed, and the ends of the submodules are cut. And the removal of the supporting substrate may be repeated as many times as necessary. In addition, in the solar cell module manufacturing method according to the embodiment, only the portion of the submodule to be removed is overlapped with the previously placed submodule, and finally a solar cell module in which the submodules are arranged in a plane without overlapping is manufactured. You may.
　１　太陽電池モジュール
　１０　基材
　２０　サブモジュール
　３０　接続部材
　２１　樹脂フィルム
　２２　第１電極層
　２３　発電層
　２４　第２電極層
　２５　第１分離溝
　２６　第２分離溝
　２７　複数の第３分離溝
　Ｃ　サブセル
　Ｅ　外部接続領域
　Ｌ　レーザ
　Ｍ　中間接続部
　Ｒ　無効領域
　Ｓ　支持基板 1 Solar cell module 10 Base material 20 Submodule 30 Connection member 21 Resin film 22 First electrode layer 23 Power generation layer 24 Second electrode layer 25 First separation groove 26 Second separation groove 27 Multiple third separation grooves C Subcell E External Connection area L Laser M Intermediate connection area R Ineffective area S Support board

Claims (4)

  1. 　シート状の基材と、前記基材の上に並んで配設され、それぞれ光電変換を行う複数のサブモジュールと、を備える太陽電池モジュールの製造方法であって、
    　複数の透明な支持基板の上にそれぞれ光電変換を行うサブモジュールを形成する工程と、
    　位置をずらして繰り返し行われ、前記基材の上に前記サブモジュールを１枚ずつ配設する工程と、
    を備え、
    　前記サブモジュールを１枚ずつ配設する工程は、
    　前記サブモジュールを前記支持基板ごと前記支持基板を上にして前記基材の上に載置する工程と、
    　前記支持基板を通して前記サブモジュールにレーザを照射することにより前記サブモジュールの端部を切断する工程と、
    　前記支持基板及び前記サブモジュールの端部を除去する工程と、
    を含む、太陽電池モジュール製造方法。     A method for manufacturing a solar cell module, comprising: a sheet-like base material; and a plurality of sub-modules arranged side by side on the base material, each of which performs photoelectric conversion,
    forming submodules each performing photoelectric conversion on a plurality of transparent support substrates;
    a step of repeatedly disposing the sub-modules one by one on the base material by shifting their positions;
    Equipped with
    The step of arranging the sub-modules one by one includes:
    placing the sub-module together with the support substrate on the base material with the support substrate facing upward;
    cutting an end of the sub-module by irradiating the sub-module with a laser through the support substrate;
    removing edges of the support substrate and the submodule;
    A solar cell module manufacturing method, including:
  2. 　前記サブモジュールを前記基材の上に載置する工程において、前記サブモジュールの端部を先に配設されている前記サブモジュールの端部に重ね、
    　前記サブモジュールの端部を切断する工程において、先に配設されている前記サブモジュールの端部に重ねられている側の端部を切除する、請求項１に記載の太陽電池モジュール製造方法。     In the step of placing the submodule on the base material, an end of the submodule is overlapped with an end of the previously disposed submodule,
    2. The solar cell module manufacturing method according to claim 1, wherein in the step of cutting the end portion of the sub-module, the end portion of the sub-module that overlaps the end portion of the previously disposed sub-module is cut off.
  3. 　前記基材の上に前記サブモジュールの間を接続する接続部材を配設する工程をさらに備える、請求項１又は２に記載の太陽電池モジュール製造方法。 The solar cell module manufacturing method according to claim 1 or 2, further comprising the step of disposing a connecting member connecting between the sub-modules on the base material.
  4. 　前記サブモジュールを形成する工程は、
    　前記支持基板の一方の主面に透明な樹脂フィルムを形成する工程と、
    　前記樹脂フィルムに第１電極層を積層する工程と、
    　第１方向に延び、前記第１電極層を切断する第１分離溝を形成する工程と、
    　前記第１電極層に光電変換を行う発電層を積層する工程と、
    　前記第１分離溝の前記第１方向と交差する第２方向第１の側に、前記第１方向に延び、前記発電層を切断する第２分離溝を形成する工程と、
    　前記発電層に第２電極層を積層する工程と
    　前記第２分離溝の前記第２方向第１の側に、前記第１方向に延び、前記発電層及び前記第２電極層のうち少なくとも前記第２電極層を切断する第３分離溝を形成する工程と、
    を有し、
    　前記サブモジュールを前記基材の上に載置する工程において、前記サブモジュールの前記第２方向第１の側の端部を先に配設されている前記サブモジュールの上に重ねる、請求項１から３のいずれかに記載の太陽電池モジュール製造方法。     The step of forming the submodule includes:
    forming a transparent resin film on one main surface of the supporting substrate;
    laminating a first electrode layer on the resin film;
    forming a first separation groove extending in a first direction and cutting the first electrode layer;
    laminating a power generation layer that performs photoelectric conversion on the first electrode layer;
    forming a second separation groove extending in the first direction and cutting the power generation layer on a first side of the first separation groove in a second direction intersecting the first direction;
    laminating a second electrode layer on the power generation layer; forming a third separation groove for cutting the two electrode layers;
    has
    Claim 1: In the step of placing the sub-module on the base material, an end portion of the sub-module on the first side in the second direction is overlapped on the previously disposed sub-module. 3. The method for manufacturing a solar cell module according to any one of 3 to 3.
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