WO2023182421A1 - Procédé de fabrication de sous-module de batterie solaire - Google Patents

Procédé de fabrication de sous-module de batterie solaire Download PDF

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Publication number
WO2023182421A1
WO2023182421A1 PCT/JP2023/011490 JP2023011490W WO2023182421A1 WO 2023182421 A1 WO2023182421 A1 WO 2023182421A1 JP 2023011490 W JP2023011490 W JP 2023011490W WO 2023182421 A1 WO2023182421 A1 WO 2023182421A1
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electrode layer
charge transport
layer
separation groove
transport layer
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PCT/JP2023/011490
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English (en)
Japanese (ja)
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将志 日野
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株式会社カネカ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning

Definitions

  • the present invention relates to a solar cell submodule manufacturing method.
  • a solar cell submodule is known in which a plurality of solar cell subcells are electrically connected in series on a single base material.
  • the area between the subcells becomes an ineffective area, so the effective area decreases, but it is possible to reduce resistance loss, especially in the electrode on the light receiving surface side. If solar cells are appropriately made into submodules, the reduction in resistance loss will outweigh the reduction in effective area, which will improve photoelectric conversion efficiency.
  • the solar cell submodule includes a step of laminating a first electrode layer on a base material, a step of cutting the first electrode layer by first laser irradiation, a step of laminating a photoelectric conversion layer, and a step of irradiating the photoelectric conversion layer with a second laser.
  • the steps of cutting by laser irradiation, laminating the second electrode layer, and cutting the second electrode layer by third laser irradiation are performed in this order, and the first laser irradiation, the second laser irradiation, and the third laser irradiation are performed. It can be manufactured by a method of forming a plurality of solar cell subcells electrically connected in series by sequentially shifting the position of laser irradiation (for example, see Patent Document 1).
  • a flexible thin solar cell submodule by using a resin film or the like as a base material.
  • the first electrode layer is cut by the first laser irradiation, not only the first electrode layer but also the surface layer of the resin film is evaporated.
  • the material of the resin film is scattered around and adheres to the surface of the first electrode layer, which can reduce photoelectric conversion efficiency.
  • the scattered resin film material may cause defects in the charge transport layer, which may have a large effect on the photoelectric conversion efficiency.
  • an object of the present invention is to provide a solar cell submodule with high photoelectric conversion efficiency.
  • a solar cell submodule manufacturing method includes a step of forming a first electrode layer on a resin base material using a transparent conductive oxide, and a step of forming a first electrode layer on the first electrode layer by laser irradiation. forming a first separation groove that does not penetrate through the first electrode layer; cutting the first electrode layer by removing the bottom of the first separation groove by chemical etching without using a mask pattern; A step of laminating a first charge transport layer, a step of laminating a photoelectric conversion layer on the first charge transport layer, a step of laminating a second charge transport layer on the photoelectric conversion layer, and a step of laminating the first charge transport layer by laser irradiation.
  • a second separation groove that cuts the charge transport layer, the photoelectric conversion layer, and the second charge transport layer; and forming a second electrode layer on the main surface of the second charge transport layer and the inner surface of the second separation groove. and forming a third separation groove that cuts at least the second electrode layer among the first charge transport layer, the photoelectric conversion layer, the second charge transport layer, and the second electrode layer by laser irradiation. and a step of forming.
  • the electrical resistance in the transverse direction per unit length of the first separation groove before the chemical etching may be 0.1 k ⁇ m or more and 10 M ⁇ m.
  • the etching solution used in the chemical etching is hydrochloric acid with a concentration of 10% by mass or more and 15% by mass or less, and the immersion time in the chemical etching is 30 seconds or more and 5 minutes or less. It's okay.
  • a solar cell submodule with high electrical conversion efficiency can be provided.
  • FIG. 2 is a schematic cross-sectional view showing the configuration of a solar cell submodule manufactured by the method for manufacturing a solar cell submodule of FIG. 1.
  • FIG. 2 is a schematic cross-sectional view illustrating a step of forming a first separation groove in FIG. 1.
  • FIG. FIG. 2 is a schematic cross-sectional view illustrating a step of cutting the first electrode layer in FIG. 1.
  • FIG. 1 is a flowchart showing the steps of a solar cell submodule manufacturing method according to an embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view showing the configuration of the solar cell submodule 1 manufactured by the method for manufacturing the solar cell submodule of FIG. 1. As shown in FIG. In the figures, the dimensions of each component have been modified for clarity.
  • the solar cell submodule 1 manufactured by the solar cell submodule manufacturing method of FIG. 1 includes a resin base material 11 disposed on the light-receiving surface side, and a resin base material 11 laminated on the back surface (opposite side to the light-receiving surface) of the resin base material 11.
  • the second charge transport layer 15 is laminated on the second charge transport layer 15, and the second electrode layer 16 is laminated on the back surface of the second charge transport layer 15.
  • the solar cell submodule 1 includes a plurality of first separation grooves 21 formed to cut the first electrode layer 12 , and cuts the first charge transport layer 13 , photoelectric conversion layer 14 , and second charge transport layer 15 .
  • the plurality of second separation grooves 22 formed to A plurality of third separation grooves 23 are formed.
  • the first separation groove 21, the second separation groove 22, and the third separation groove 23 are formed close to each other in this order. form intermediate structure portions C1 for separating and electrically connecting subcells, and portions between these intermediate structure portions C1 form subcell portions C2 each having an independent photoelectric conversion structure.
  • the solar cell submodule manufacturing method for manufacturing such a solar cell submodule 1 includes laminating the first electrode layer 12 on one main surface (the surface opposite to the light-receiving surface) of the resin base material 11. (S1: first electrode layer lamination step) and a step of forming first separation grooves 21 in the first electrode layer 12 that do not penetrate the first electrode layer 12 by laser irradiation (S2: first separation groove formation).
  • step 3 a step of cutting the first electrode layer 12 by removing the bottom of the first separation groove 21 by chemical etching without using a mask pattern
  • S4 first charge transport layer lamination step
  • S5 photoelectric conversion layer lamination step
  • the first charge transport layer 13, the photoelectric conversion layer 14, and the second charge transport layer 15 are formed by laminating the second charge transport layer 15 on the photoelectric conversion layer 14 (S6: second charge transport layer lamination step) and by laser irradiation.
  • a step of forming a second separation groove 22 for cutting (S7: second separation groove formation step), and a step of laminating the second electrode layer 16 on the main surface of the second charge transport layer 15 and the inner surface of the second separation groove 22.
  • At least the second electrode layer 16 of the first charge transport layer 13, photoelectric conversion layer 14, second charge transport layer 15, and second electrode layer 16 is removed by the step (S8: second electrode layer lamination step) and laser irradiation.
  • a step of forming a third separation groove 23 to be cut (S9: third separation groove forming step) is provided.
  • the first electrode layer 12 is laminated on the entire one main surface of the resin base material 11.
  • the first electrode layer 12 may be laminated on the resin base material 11 by, for example, a sputtering method, a vacuum evaporation method, or the like.
  • the resin base material 11 is a structural member that ensures the strength of the solar cell submodule 1.
  • the resin base material 11 may be formed from a transparent resin material, specifically polyimide, polyamide, polyethylene terephthalate, or the like.
  • the resin base material 11 may be a flexible resin film in order to form the flexible solar cell submodule 1.
  • the resin base material 11 may be supported by a support such as a glass substrate.
  • the resin base material 11 may be a resin film formed by coating on a support.
  • the first electrode layer 12 collects the first charge generated in the photoelectric conversion layer 14 through the first charge transport layer 13 and outputs it to the adjacent subcell section C2 or to the outside.
  • the first electrode layer 12 is a positive electrode that collects holes.
  • the first electrode layer 12 may be formed of a transparent conductive oxide (TCO) that has electrical conductivity and light transparency.
  • TCO transparent conductive oxide
  • the transparent conductive oxide forming the first electrode layer 12 for example, indium oxide, tin oxide, zinc oxide, titanium oxide, and composite oxides thereof can be used. Among these, indium-based composite oxides containing indium oxide as a main component are preferred. Indium oxide is particularly preferred from the viewpoint of high conductivity and transparency.
  • dopants to the indium oxide to ensure reliability or higher conductivity.
  • the dopant include Sn, W, Zn, Ti, Ce, Zr, Mo, Al, Ga, Ge, As, Si, and S.
  • ITO Indium Tin Oxide
  • ITO Indium Tin Oxide
  • the lower limit of the thickness of the first electrode layer 12 is preferably 5 nm, more preferably 10 nm.
  • the upper limit of the thickness of the first electrode layer 12 is preferably 200 nm, more preferably 150 nm.
  • the first electrode layer 12 is partially removed in the thickness direction in a plurality of parallel lines in a plan view, so that the first separation groove is formed as shown in FIG.
  • a plurality of first separation grooves 21 having bottom portions 211 in which the material of the electrode layer 12 remains continuously are formed.
  • the laser for irradiation for example, a THG (third harmonic) laser or the like can be used. Conditions such as laser output and scanning speed are set so that the laser does not penetrate the first electrode layer 12.
  • not penetrating means that the laser locally reaches the resin base material 11 due to, for example, a pinhole or variation in the first electrode layer 12, that is, a pinhole is formed in the bottom 211 of the first separation groove 21. This does not preclude it from happening.
  • the width of the first separation groove 21 is preferably 10 ⁇ m or more and 200 ⁇ m or less, and more preferably 20 ⁇ m or more and 100 ⁇ m or less, considering that it is formed by laser ablation. This makes it possible to ensure reliable isolation between the sub-cell portions C2 and to secure the effective area of the sub-cell portions C2.
  • the electric resistance (calculated as the value obtained by multiplying the electrical resistance between adjacent regions across the first separation groove 21 of the first electrode layer 12 by the length of the first separation groove 21), the lower limit is 0.1 k ⁇ m. Preferably, 1 k ⁇ m is more preferable.
  • the upper limit of the electrical resistance in the transverse direction of the first separation groove 21 is preferably 10 M ⁇ m, more preferably 1 M ⁇ m.
  • the bottom part 211 of the first separation groove 21 can be reliably removed in the next first electrode layer cutting process, and the first electrode layer 12 can be can be cut.
  • the laminate of the resin base material 11 and the first electrode layer 12 is immersed in an etching solution without using a mask pattern.
  • the surface of the first electrode layer 12 and the inner surface of the first separation groove 21 are eroded, and the bottom 211 of the first separation groove 21 is removed. That is, the thickness of the first electrode layer 12 is slightly reduced by etching, and the first electrode layer 12 is separated so as to be electrically insulated between the subcell portions C2.
  • hydrochloric acid can be used as the etching solution for chemical etching.
  • concentration of hydrochloric acid is preferably 10% by mass or more and 15% by mass or less from the viewpoint of controlling the erosion rate of the first electrode layer 12 appropriately.
  • immersion time for chemical etching is preferably 30 seconds or more and 5 minutes or less.
  • the first charge transport layer 13 is laminated on the entire surface of the laminate of the resin base material 11 and the first electrode layer 12 on the side where the first separation groove 21 is formed.
  • the first charge transport layer 13 is a layer that allows first polarity charges (photocarriers) generated in the photoelectric conversion layer 14 to pass, and in this embodiment, hole transport that transfers holes to the first electrode layer 12.
  • layer (HTL) The first charge transport layer 13 is made of a resin base that is exposed on the inner surface of the first separation groove 21, that is, on the end face of the first electrode layer 12 and the recessed part of the first separation groove 21, in order to prevent short circuits between the subcell parts C2. 11 surfaces are coated.
  • the first charge transport layer 13 may be formed by, for example, a sputtering method, a vacuum evaporation method, or the like. Further, when the first charge transport layer 13 contains an organic substance, the first charge transport layer 13 may be formed by, for example, applying a solution of the organic substance and drying the organic substance.
  • the main material of the first charge transport layer 13, which is a hole transport layer, is, for example, a metal oxide such as nickel oxide (NiO) or copper oxide (Cu 2 O), for example, PTAA (Poly(bis(4-phenyl)). Examples include organic substances such as 2,4,6-trimethylphenyl)amine) and Spiro-MeOTAD.
  • the first charge transport layer 13 is made of, for example, 2PACz ([2-(9H-Carbazol-9-yl)ethyl]phosphonic acid), MeO-2PACz ([2-(3,6-Dimethoxy-9H-carbazol-9 Self-assembled monolayer (SAM: Self-Assembled Monolayers). Further, the first charge transport layer 13 may have a multilayer structure.
  • the thickness of the first charge transport layer 13 can vary greatly depending on its material, the structure of adjacent layers, etc., but can be, for example, 1 nm or more and 200 nm or less, and especially when it is a self-assembled monolayer, the material molecule
  • the thickness can be as follows.
  • the photoelectric conversion layer 14 is laminated on the entire surface of the first charge transport layer 13.
  • the photoelectric conversion layer 14 absorbs incident light and generates photocarriers (electrons and holes).
  • the photoelectric conversion layer 14 may contain a perovskite compound.
  • the photoelectric conversion layer 14 includes a lead halide (PbX 2 ) material and halogen. It can be formed by sequentially depositing methylammonium chloride (MAX) materials and reacting thin films of these materials at reaction temperatures.
  • MAX methylammonium chloride
  • the perovskite compound is methylammonium lead iodide (MAPbI y X (3-y) (CH 3 NH 3 PbI y ) material and methylammonium iodide (MAI) material are sequentially formed into films, and the thin films of these materials are reacted at a reaction temperature.
  • the photoelectric conversion layer 14 can also be formed, for example, by a sol-gel method in which a perovskite compound is synthesized within a liquid-phase coating film, a coating method in which a solution containing a pre-synthesized perovskite compound is applied, or the like.
  • the perovskite compound contained in the photoelectric conversion layer 14 includes an organic atom A containing at least one of a monovalent organic ammonium ion and an amidinium ion, a metal atom B generating a divalent metal ion, and an iodide ion.
  • a compound represented by ABX 3 containing a halogen atom X containing at least one of I, bromide ion Br, chloride ion Cl, and fluoride ion F can be used.
  • methylammonium MA (CH 3 NH 3 ) is preferable as the organic atom A
  • lead Pb is preferable as the metal atom B
  • the halogen atom At least one of iodide I, bromide ion Br and chloride ion Cl is preferred.
  • preferred perovskite compounds include methylammonium lead halide MAPbX 3 (CH 3 NH 3 PbX 3 ), MAPbI 3 , MAPbBr 3 , MAPbCl 3 and the like.
  • the halogen atom X may include a plurality of types. Examples of perovskite compounds containing iodide I and other halogen atoms X include methylammonium lead iodide MAPbI y X (3-y) (CH 3 NH 3 PbI y X (3-y) ), MAPbI y Br ( 3-y) , MAPbI y Cl (3-y) , etc. (y is any positive integer).
  • the thickness of the photoelectric conversion layer 14 depends on the forming material, etc., it is preferably 100 nm or more and 1000 nm or less in order to increase the light absorption rate and reduce the migration distance of the generated charges.
  • the second charge transport layer 15 is laminated on the entire surface of the photoelectric conversion layer 14.
  • the second charge transport layer 15 is a layer that allows charges of the second polarity generated in the photoelectric conversion layer 14 to pass through. In this embodiment, it is an electron transport layer (ETL) that transfers electrons to the second electrode layer 16.
  • ETL electron transport layer
  • the second charge transport layer 15 may be formed, for example, by a sol-gel method, a coating method, or the like.
  • Examples of the main material of the second charge transport layer 15, which is an electron transport layer, include PTAA (Poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)), Spiro-MeOTAD, fullerene, etc. It will be done.
  • Examples of fullerenes include C60, C70, their hydrides, oxides, metal complexes, derivatives with added alkyl groups, etc., such as PCBM ([6,6]-Phenyl-C61-Butyric Acid Methyl Ester). It will be done.
  • the second charge transport layer 15 may have a multilayer structure.
  • the thickness of the second charge transport layer 15 may vary greatly depending on its material, the structure of adjacent layers, etc., but may be, for example, 3 nm or more and 30 nm or less.
  • the first charge transport layer 13, the photoelectric conversion layer 14, and the second charge transport layer 15 are removed in a plurality of parallel lines by laser ablation, thereby forming a plurality of second separation grooves.
  • a groove 22 is formed.
  • the width of the second separation groove 22 is the same as the width of the first separation groove 21.
  • the second separation groove 22 of the laminate of the resin base material 11, the first electrode layer 12, the first charge transport layer 13, the photoelectric conversion layer 14, and the second charge transport layer 15 is formed.
  • a second electrode layer 16 is laminated on the entire surface of the exposed side.
  • the second electrode layer 16 is an electrode that makes a pair with the first electrode layer 12, and is a negative electrode in this embodiment.
  • the second electrode layer 16 is stacked so as to be in contact with the first electrode layer 12 at the deep part of the second separation groove 22 in order to electrically connect the adjacent subcell parts C2 in series.
  • the second electrode layer 16 preferably includes a metal layer made of copper or the like, for example, in order to reduce electrical resistance.
  • the second electrode layer 16 may have a multilayer structure including a transparent conductive oxide layer or the like to improve adhesion to the second charge transport layer 15.
  • the second electrode layer 16 may be laminated by a method such as a sputtering method, a vacuum evaporation method, or a plating method.
  • the lower limit of the thickness of the second electrode layer 16 is preferably 10 nm, more preferably 20 nm.
  • the upper limit of the thickness of the second electrode layer 16 is preferably 200 nm, more preferably 100 nm.
  • the first charge transport layer 13, the photoelectric conversion layer 14, the second charge transport layer 15, and the second electrode layer 16 are removed in a plurality of parallel lines by laser ablation. , a plurality of third separation grooves 23 are formed.
  • the width of the third separation groove 23 is the same as the width of the first separation groove 21 and the second separation groove 22.
  • the surface of the resin base material 11 is cut by cutting the first electrode layer 12 in two steps: the first separation groove forming step and the first electrode layer cutting step. Since the material of the first charge transport layer 13 is not scattered around, deterioration in performance due to defects in the first charge transport layer 13 can be effectively prevented. Therefore, according to the solar cell submodule manufacturing method according to the present embodiment, a solar cell submodule with high photoelectric conversion efficiency can be stably manufactured.
  • the solar cell submodule manufacturing method according to the invention may include the step of laminating further layers, such as anti-reflection coatings, protective coatings, etc.
  • ITO is laminated to a thickness of 150 nm as a first electrode layer on the entire surface of a resin base material made of polyimide with a width of 125 mm, and a first separation groove is formed by irradiating this with laser irradiation across the width direction. Furthermore, a test was conducted in which the first electrode layer was cut by enlarging the first separation groove by chemical etching. As a laser, a THG laser "Trumark 6330" manufactured by TRUMPF was used, and the tests in Test Examples 1 to 5 were conducted with a scanning speed of 200 mm/sec, a spot diameter of 25 ⁇ m, and a frequency of 10 kHz, and the output was changed. In the chemical etching step, chemical etching was performed using hydrochloric acid with a concentration of 12% by mass as an etching solution and an immersion time of 2 minutes, followed by sufficient rinsing with ultrapure water.
  • the laser output was 60% in Test 1, 50% in Test 2, 40% in Test 3, 30% in Test 4, and 20% in Test 5.
  • the measurement range was exceeded (insulated state) in test 1, 215 M ⁇ in test 2, 3.0 k ⁇ in test 3, and 44 ⁇ in test 4. 5 and it was 30 ⁇ .
  • the electrical resistance was similarly measured after chemical etching, it was found to be over the measurement range in Test 1, exceed the measurement range in Test 2, exceed the measurement range in Test 3, 65 ⁇ in Test 4, and 30 ⁇ in Test 5.
  • Tests 2 and 3 it was possible to form a first separation groove that remained within the thickness of the first electrode layer by laser irradiation and cut the first electrode layer by chemical etching as planned. on the other hand.
  • the laser reached the resin base material, and in Tests 4 and 5, the first electrode layer could not be cut by chemical etching.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
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Abstract

Un procédé de fabrication d'un sous-module de batterie solaire selon un aspect de la présente invention comprend : une étape consistant à former une première couche d'électrode (12) à l'aide d'un oxyde conducteur transparent sur un substrat de résine (11) ; une étape consistant à former, par irradiation laser, une première rainure de séparation (21) sur la première couche d'électrode (12), une première rainure de séparation qui ne passe pas à travers la première couche d'électrode (12) ; une étape consistant à découper la première couche d'électrode (12) en retirant la partie inférieure de la première rainure de séparation (21) par gravure chimique sans utiliser de motif de masque ; une étape consistant à empiler une première couche de transport de charge électrique (13) sur la première couche d'électrode (12) ; une étape consistant à empiler une couche de conversion photoélectrique (14) sur la première couche de transport de charge électrique (13) ; une étape consistant à empiler une seconde couche de transport de charge électrique (15) sur la couche de conversion photoélectrique (14) ; une étape consistant à former, par irradiation laser, une deuxième rainure de séparation (22) qui coupe la première couche de transport de charge électrique (13), la couche de conversion photoélectrique (14) et la seconde couche de transport de charge électrique (15) ; une étape consistant à empiler une seconde couche d'électrode (16) sur la surface principale de la seconde couche de transport de charge électrique (15) et la surface interne de la deuxième rainure de séparation (22) ; et une étape consistant à former, par irradiation laser, une troisième rainure de séparation (23) qui coupe au moins la seconde couche d'électrode (16).
PCT/JP2023/011490 2022-03-25 2023-03-23 Procédé de fabrication de sous-module de batterie solaire WO2023182421A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001223379A (ja) * 1999-11-29 2001-08-17 Sanyo Electric Co Ltd 光起電力装置の製造方法
WO2013137274A1 (fr) * 2012-03-12 2013-09-19 三菱化学株式会社 Procédé de fabrication de module de cellule solaire à film mince organique, et module de cellule solaire à film mince organique
CN109950341A (zh) * 2019-03-28 2019-06-28 苏州协鑫纳米科技有限公司 薄膜太阳能电池组件和检测薄膜太阳能电池组件p2刻断情况的方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001223379A (ja) * 1999-11-29 2001-08-17 Sanyo Electric Co Ltd 光起電力装置の製造方法
WO2013137274A1 (fr) * 2012-03-12 2013-09-19 三菱化学株式会社 Procédé de fabrication de module de cellule solaire à film mince organique, et module de cellule solaire à film mince organique
CN109950341A (zh) * 2019-03-28 2019-06-28 苏州协鑫纳米科技有限公司 薄膜太阳能电池组件和检测薄膜太阳能电池组件p2刻断情况的方法

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