WO2023181918A1 - Dispositif d'inspection de défauts et procédé d'inspection de défauts - Google Patents

Dispositif d'inspection de défauts et procédé d'inspection de défauts Download PDF

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Publication number
WO2023181918A1
WO2023181918A1 PCT/JP2023/008619 JP2023008619W WO2023181918A1 WO 2023181918 A1 WO2023181918 A1 WO 2023181918A1 JP 2023008619 W JP2023008619 W JP 2023008619W WO 2023181918 A1 WO2023181918 A1 WO 2023181918A1
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Prior art keywords
image
defect
difference
chip
optical
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PCT/JP2023/008619
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English (en)
Japanese (ja)
Inventor
康之 久世
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東レエンジニアリング株式会社
東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社
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Publication of WO2023181918A1 publication Critical patent/WO2023181918A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects

Definitions

  • the present invention relates to a defect inspection apparatus and a defect inspection method that inspect defects in chips formed on a wafer.
  • Semiconductor devices are manufactured by repeatedly forming multiple semiconductor device circuits (chips) in a matrix on a single semiconductor wafer, cutting them into individual chips, and packaging the diced chips. be done.
  • the inspection image and the reference image are compared pixel by pixel while sequentially imaging the external pattern of each chip formed on the wafer, and the brightness of the contrasted pixels is determined. Defects within the chip are detected based on differences in values (for example, Patent Document 1).
  • Defect inspection inside the chip is performed while taking an image of the chip with an optical microscope, but it is necessary to set the optical conditions of the optical microscope so that the defects can be clearly seen.
  • the defect can be detected by moving the optical microscope to the area containing the defect, changing the optical conditions, and visually checking the inspection image. We are searching for optical conditions that will allow us to see clearly.
  • the present invention has been made in view of the above problems, and its main purpose is to provide a defect inspection apparatus that uses an optical microscope to inspect defects in chips formed on a wafer in a simple manner.
  • An object of the present invention is to provide a defect inspection device and a defect inspection method that can automatically detect the optimum optical conditions for imaging a region including a defect.
  • the defect inspection apparatus is a defect inspection apparatus that inspects defects in chips formed on a wafer, and includes an optical microscope equipped with an imaging unit that takes an image of the chip, and an optical microscope that uses the optical microscope to take an image of the chip.
  • the imaging section includes a control section that controls optical conditions for imaging the defect, and a storage section that stores the position of a defect detected in advance in the chip. A first image of the stored defect-containing region and a second image of the defect-free region in the same region as the defect-containing region are captured, and the feature amount of the first image and the second image are captured.
  • the apparatus is equipped with a detection means for detecting optimal optical conditions for imaging a region including a defect by comparing the feature amount of the image.
  • a defect inspection device that uses an optical microscope to inspect defects in chips formed on a wafer, optimal optical conditions for imaging a region containing defects can be automatically determined in a simple manner. It is possible to provide a defect inspection device and a defect inspection method capable of detecting defects.
  • FIG. 1 is a diagram schematically showing the configuration of a defect inspection apparatus 1 according to a first embodiment of the present invention.
  • 2 is a flowchart showing a method for detecting optimal optical conditions for imaging a region including a defect using the defect inspection apparatus according to the first embodiment.
  • (A) to (C) are diagrams illustrating a method for detecting optimal optical conditions for imaging a region including a defect, according to the flowchart shown in FIG. 2.
  • FIG. 7 is a diagram illustrating a method of detecting optimal optical conditions in a modification of the first embodiment.
  • (A) to (C) are diagrams illustrating a method for creating learning data for a plurality of non-defective chips in the second embodiment of the present invention.
  • (A) and (B) are diagrams showing the brightness value gi and sensitivity value Ai of each pixel in the defective area A.
  • (A) and (B) are diagrams showing the luminance value g'i and sensitivity value A'i of each pixel in the non-defective area B.
  • FIG. 1 is a diagram schematically showing the configuration of a defect inspection apparatus 1 according to a first embodiment of the present invention.
  • a defect inspection apparatus 1 is a defect inspection apparatus that inspects defects in chips formed on a wafer, and includes an optical microscope 10 and an optical microscope 10 for capturing an image of the chip.
  • a control unit 20 that controls optical conditions, a storage unit 25 that stores the position of a defect detected in advance in the chip, and an optical microscope 10 that detect the optimal optical conditions for imaging a region containing a defect.
  • Means 40 is provided.
  • the optical microscope 10 includes a stage 11 on which a wafer 30 is placed, a microscope main body 12 that holds the stage 11, an illumination section 13 that irradiates illumination light L onto the wafer 30, and an imaging section that captures an image of a chip. It is equipped with 14.
  • the illumination light L emitted from the illumination unit 13 is focused by the condenser lens 15, then deflected by the half mirror 16 along the optical axis of the objective lens 17, and is irradiated onto the surface of the wafer 30.
  • the reflected light from the wafer 30 passes through the objective lens 17, the half mirror 16, and the coupling lens 18, and then enters the image sensor 19.
  • the image captured by the image sensor 19 is subjected to image processing by the image processing section 35.
  • the detection means 40 detects optimal optical conditions for imaging a region including a defect based on the image information of the chip imaged by the imaging unit 14.
  • the control unit 20 sets the optical microscope 10 to the optimal optical conditions detected by the detection means 40, images the chip, and detects defects in the wafer 30.
  • the optical conditions of the optical microscope 10 controlled by the control unit 20 include the magnification of the objective lens 17, the type (coaxial, oblique, transmitted) and brightness of the illumination light L, and a differential interference filter (not shown).
  • the position of the illumination light L, the filter of the illumination light L (not shown), etc. are diverse.
  • FIG. 2 is a flowchart showing a method for detecting optimal optical conditions for imaging a region containing a defect using the defect inspection apparatus 1 according to the present embodiment.
  • a chip 31 formed on a wafer 30 is imaged in advance with an optical microscope 10 to detect defects within the chip 31.
  • the position is registered in the storage unit 25 (step S101).
  • control unit 20 changes the optical conditions of the optical microscope 10 (step S102), and changes the image (first image) of the area (defect area) A including the defect 50. ) is imaged (step S103).
  • an image (second image) of an area (good product area) of the chip 31b that is the same area as the area A that includes the defect 50 and does not include the defect 50 is created.
  • the defective area A and the non-defective area B are the same area within the chip.
  • the brightness value (feature value) of the image (first image) of the defective area A is compared with the brightness value (feature value) of the image (second image) of the non-defective area B (step S105).
  • step S106 if the search for the optimal optical conditions has not been completed (No in step S106), the optical conditions of the optical microscope 10 are changed (step S102), and steps S103 to S105 are repeated. If the search for the optimal optical conditions has been completed (Ys in step S106), the optical microscope 10 is set to the optimal optical conditions to detect defects within the wafer 30.
  • Table 1 shows the brightness value (A) of defective area A obtained by changing the optical conditions four times and capturing an image of defective area A and an image of non-defective area B under each optical condition. This is a table illustrating the brightness value of B (B) and the difference between the two brightness values (BA). Note that the numerical values of the brightness values indicate arbitrary units.
  • the difference (BA) between the brightness value (A) of the defective area A and the brightness value (B) of the non-defective area B is an evaluation value for determining the optimal optical conditions.
  • optical condition 2 has the largest difference (BA) in luminance value between the two. Therefore, in this case, optical condition 2 can be said to be the most suitable optical condition.
  • the area containing the defect is determined.
  • the optimal optical conditions for imaging can be detected. This allows a margin for the threshold value when detecting a defect, so that it is possible to improve the detection accuracy when detecting a defect within a chip.
  • the optimal optical conditions were determined from the difference (B-A) between the brightness value (A) of defective area A and the brightness value (B) of non-defective area B, but the brightness value of defective area A (A) and the brightness value (B) of the non-defective area B may be compared using the ratio (B/A) between the two, as shown in Table 2.
  • optical condition 2 has the largest ratio (B/A) of both luminance values. Therefore, in this case, optical condition 2 can be said to be the most suitable optical condition.
  • the brightness value of the image of the defective area A is compared with the brightness value of the image of the non-defective area B (second image) to image the area including the defect.
  • the optimum optical conditions may also be detected by adding the difference in brightness values between images of different non-defective areas to the evaluation value.
  • an area of the chip 31c that does not include the defect 50 is the same area as the area A that includes the defect 50 shown in FIG. 3(B), and is different from the chip 31b shown in FIG. (non-defective area) B' image (second image) is captured.
  • the defective area A and the non-defective area B' are the same area within the chip.
  • the brightness value (B2) is compared.
  • Table 3 shows the brightness value (A) of the defective area A, the brightness value (B1) of the first good area B, and the brightness value of the second good area
  • the difference (B1-B2) between the brightness values of the non-defective areas also serves as an evaluation value for determining the optimal optical conditions.
  • the difference between the brightness value (A) of defective area A and the brightness value (B1) of non-defective area B (first brightness value difference: D1), and the difference in brightness value between non-defective areas B and B' (
  • the difference (D1 ⁇ D2) from the second brightness value difference (D2) is an evaluation value for determining more optimal optical conditions.
  • optical condition 2 has the largest difference in brightness values (D1-D2). Therefore, in this case, optical condition 2 can be said to be the most suitable optical condition.
  • optical condition 2 can be said to be the most suitable optical condition.
  • by reducing the difference in brightness values between non-defective areas it is possible to suppress the detection of false defects that would cause non-defective products to be considered defects.
  • the brightness values of images captured in the non-defective area and the defective area were used as the feature values that serve as evaluation values for determining the optimal optical conditions. It may also be used as
  • DSI Die-to-Statistical Image
  • FIG. 5 is a diagram illustrating a method for creating learning data for a plurality of non-defective chips.
  • a plurality of non-defective chips are imaged to obtain an image of the same area as the non-defective area B shown in FIG. 3(C).
  • the number of pixels P in area B is 12 (3 ⁇ 4).
  • the sensitivity value Ai at each pixel in the defective area A and non-defective area B shown in FIGS. 3(B) and (C) is calculated for the wafer to be inspected. Calculated based on the following formula (1).
  • gi indicates the brightness value at each pixel.
  • FIG. 6(A) shows the luminance value gi of each pixel in the defective area A
  • FIG. 6(B) shows the sensitivity value Ai of each pixel calculated using equation (1).
  • FIG. 7(A) shows the luminance value g'i of each pixel in the non-defective area B
  • FIG. 7(B) shows the sensitivity value A'i of each pixel calculated using equation (1). show.
  • the sensitivity value Ai of each pixel in the defect area A and the sensitivity value A'i of each pixel in the non-defective area B are obtained while changing the optical conditions of the optical microscope.
  • the maximum value Amax of the sensitivity value Ai of each pixel in the defective area A is compared with the maximum value A'max of the sensitivity value Ai of each pixel in the non-defective area B.
  • Table 4 shows the sensitivity value of defective area A (Amax), the sensitivity value of non-defective area B (A'max), and the difference between the two sensitivity values under each optical condition after changing the optical conditions four times. This is a table illustrating (A'maxB-Amax). Note that the numerical value of the sensitivity value indicates an arbitrary unit.
  • the difference (Amax-A'max) between the sensitivity value (Amax) of the defective area A and the sensitivity value (A'max) of the non-defective area B is an evaluation value for determining the optimal optical conditions.
  • the sensitivity value is a threshold value for detecting a target defect during inspection. Therefore, since the evaluation value is similar to that of an actual inspection, more accurate evaluation is possible than using a "luminance value.”
  • optical condition 2 has the largest difference in luminance value (A'max-Amax) between the two. Therefore, in this case, optical condition 2 can be said to be the most suitable optical condition.
  • the optimal optical conditions were determined from the difference (A'max - Amax) between the sensitivity value (Amax) of defective area A and the sensitivity value (A'max) of non-defective area B.
  • the sensitivity value (Amax) of A and the sensitivity value (A'max) of non-defective area B may be compared based on the ratio of the two (A'max/Amax).
  • the brightness value and sensitivity value of images captured in a non-defective area and a defect area are used as an example of feature values that are evaluation values for determining the optimal optical conditions of an optical microscope, but the invention is not limited to this. Instead, other feature quantities may be used, such as a variance value or a brightness value after edge enhancement filter processing, as long as the feature quantity changes depending on the sharpness of the image.

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Abstract

L'invention concerne un dispositif d'inspection de défaut permettant, avec un procédé simple, de détecter automatiquement des conditions optiques optimales pour imager une région qui comprend un défaut.　Un dispositif d'inspection de défaut (1) comprend : un microscope optique (10) pourvu d'une unité d'imagerie (14) pour capturer une image d'une puce (31) ; une unité de commande (20) pour commander des conditions optiques pour capturer l'image de la puce ; et une unité de stockage (25) pour stocker l'emplacement d'un défaut dans la puce qui a été détecté à l'avance. L'unité d'imagerie est pourvue d'un moyen de détection pour : capturer, tout en changeant les conditions optiques, une première image d'une région qui comprend le défaut stocké dans l'unité de stockage ainsi qu'une seconde image d'une région qui ne comprend pas le défaut dans la même région que la région qui comprend le défaut ; et détecter les conditions optiques optimales pour imager la région qui comprend le défaut par comparaison d'une quantité de caractéristiques de la première image et d'une quantité de caractéristiques de la seconde image.
PCT/JP2023/008619 2022-03-25 2023-03-07 Dispositif d'inspection de défauts et procédé d'inspection de défauts WO2023181918A1 (fr)

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JP2022050008A JP2023142884A (ja) 2022-03-25 2022-03-25 欠陥検査装置及び欠陥検査方法
JP2022-050008 2022-03-25

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WO2023181918A1 true WO2023181918A1 (fr) 2023-09-28

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009145307A (ja) * 2007-12-18 2009-07-02 Nikon Corp 表面検査装置および表面検査方法
JP2010054269A (ja) * 2008-08-27 2010-03-11 Toshiba Corp 外観検査方法、プログラムおよび外観検査装置
JP2010151655A (ja) * 2008-12-25 2010-07-08 Hitachi High-Technologies Corp 欠陥検査方法及びその装置
US20140219544A1 (en) * 2013-02-01 2014-08-07 Kla-Tencor Corporation Detecting Defects on a Wafer Using Defect-Specific and Multi-Channel Information

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009145307A (ja) * 2007-12-18 2009-07-02 Nikon Corp 表面検査装置および表面検査方法
JP2010054269A (ja) * 2008-08-27 2010-03-11 Toshiba Corp 外観検査方法、プログラムおよび外観検査装置
JP2010151655A (ja) * 2008-12-25 2010-07-08 Hitachi High-Technologies Corp 欠陥検査方法及びその装置
US20140219544A1 (en) * 2013-02-01 2014-08-07 Kla-Tencor Corporation Detecting Defects on a Wafer Using Defect-Specific and Multi-Channel Information

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