WO2023181735A1 - 撮像素子及び撮像装置 - Google Patents

撮像素子及び撮像装置 Download PDF

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Publication number
WO2023181735A1
WO2023181735A1 PCT/JP2023/005628 JP2023005628W WO2023181735A1 WO 2023181735 A1 WO2023181735 A1 WO 2023181735A1 JP 2023005628 W JP2023005628 W JP 2023005628W WO 2023181735 A1 WO2023181735 A1 WO 2023181735A1
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WIPO (PCT)
Prior art keywords
pixel group
light
green
red
blue
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Ceased
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PCT/JP2023/005628
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English (en)
French (fr)
Japanese (ja)
Inventor
光裕 竹内
祥生 西
哲哉 皆川
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to KR1020247034659A priority Critical patent/KR20240166529A/ko
Priority to EP23774334.9A priority patent/EP4503641A4/en
Priority to US18/846,379 priority patent/US12615447B2/en
Priority to CN202380021830.XA priority patent/CN118715783A/zh
Priority to JP2024509849A priority patent/JPWO2023181735A1/ja
Publication of WO2023181735A1 publication Critical patent/WO2023181735A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Definitions

  • the present disclosure relates to an imaging device and an imaging device.
  • an image sensor has been proposed in which a pixel group in which a plurality of pixels having color filters of the same color are arranged adjacent to each other is arranged in a Bayer array (for example, in a patent (See Reference 1).
  • the above-mentioned conventional technology has the problem that the sensitivity difference between the pixels included in the unit cannot be adjusted, resulting in a decrease in image quality.
  • the present disclosure proposes an image sensor and an image sensor that reduce the difference in sensitivity between pixels in a pixel group in which a plurality of pixels having the same color filter are arranged adjacent to each other.
  • the present disclosure has been made to solve the above-mentioned problems, and a first aspect thereof is to provide a color filter that transmits red light and photoelectrically convert incident light that has passed through the color filter.
  • Red pixels that generate image signals corresponding to red light are arranged in 2 rows and 2 columns, and a red pixel block in which a common on-chip lens is arranged is arranged in 2 rows and 2 columns, and a red pixel group that generates an image signal corresponding to green light.
  • a common on-chip lens is arranged in which green pixels are arranged in two rows and two columns and are provided with a transmitting color filter and photoelectrically convert the incident light that has passed through the color filter to generate an image signal corresponding to green light.
  • a green pixel group in which green pixel blocks are arranged in two rows and two columns, and a color filter that transmits blue light are provided, and the incident light that has passed through the color filter is photoelectrically converted to produce an image signal corresponding to the blue light.
  • a pixel array in which blue pixels to be generated are arranged in 2 rows and 2 columns, a common on-chip lens is arranged, and a blue pixel group in which blue pixel blocks are arranged in 2 rows and 2 columns are arranged in a Bayer array.
  • the on-chip lens is an image sensor configured to have a different shape for each of the red pixel group, the green pixel group, and the blue pixel group.
  • a second aspect of the present disclosure includes a color filter that transmits red light, and includes two rows of red pixels that perform photoelectric conversion of incident light that has passed through the color filter to generate an image signal corresponding to the red light.
  • Green pixels that perform photoelectric conversion to generate image signals corresponding to green light are arranged in 2 rows and 2 columns, and green pixel blocks in which a common on-chip lens is arranged are arranged in 2 rows and 2 columns.
  • Groups and blue pixels which are equipped with a color filter that transmits blue light and perform photoelectric conversion of the incident light that has passed through the color filter to generate an image signal corresponding to the blue light, are arranged in two rows and two columns.
  • a pixel array section configured by blue pixel blocks in which on-chip lenses are arranged and blue pixel groups arranged in two rows and two columns in a Bayer array, and a processing circuit that processes the image signal.
  • the on-chip lens is an imaging device configured to have a different shape for each of the red pixel group, the green pixel group, and the blue pixel group.
  • a third aspect of the present disclosure is provided with a color filter that transmits red light, and two rows of red pixels that perform photoelectric conversion of incident light that has passed through the color filter to generate an image signal corresponding to the red light.
  • Green pixels that perform photoelectric conversion to generate image signals corresponding to green light are arranged in 2 rows and 2 columns, and green pixel blocks in which a common on-chip lens is arranged are arranged in 2 rows and 2 columns.
  • Groups and blue pixels which are equipped with a color filter that transmits blue light and perform photoelectric conversion of the incident light that has passed through the color filter to generate an image signal corresponding to the blue light, are arranged in two rows and two columns.
  • a pixel array section includes a blue pixel group in which blue pixel blocks in which on-chip lenses are arranged are arranged in two rows and two columns in a Bayer array, the red pixel group, the green pixel group, and the blue pixel group; a light-shielding wall disposed in a color filter area between pixel groups, and the light-shielding wall is an image sensor configured to have a different shape for each of the red pixel group, the green pixel group, and the blue pixel group. be.
  • a fourth aspect of the present disclosure includes a color filter that transmits red light, and includes two rows of red pixels that perform photoelectric conversion of incident light that has passed through the color filter to generate an image signal corresponding to the red light.
  • Green pixels that perform photoelectric conversion to generate image signals corresponding to green light are arranged in 2 rows and 2 columns, and green pixel blocks in which a common on-chip lens is arranged are arranged in 2 rows and 2 columns.
  • Groups and blue pixels which are equipped with a color filter that transmits blue light and perform photoelectric conversion of the incident light that has passed through the color filter to generate an image signal corresponding to the blue light, are arranged in two rows and two columns.
  • a pixel array section includes a blue pixel group in which blue pixel blocks in which on-chip lenses are arranged are arranged in two rows and two columns in a Bayer array, the red pixel group, the green pixel group, and the blue pixel group; It has a light-shielding wall disposed in a color filter area between pixel groups, and a processing circuit that processes the image signal, and the light-shielding wall has a light-shielding wall disposed in a region of a color filter between pixel groups, and a light-shielding wall that is arranged in a region of a color filter between pixel groups, and a processing circuit that processes the image signal.
  • This is an imaging device configured in different shapes.
  • FIG. 1 is a diagram illustrating a configuration example of an image sensor according to an embodiment of the present disclosure.
  • FIG. 2 is a diagram illustrating an example configuration of a pixel according to an embodiment of the present disclosure.
  • FIG. 3 is a diagram illustrating an example of pixel sensitivity according to an embodiment of the present disclosure.
  • FIG. 3 is a diagram illustrating an example of pixel sensitivity according to an embodiment of the present disclosure.
  • FIG. 3 is a diagram illustrating an example of pixel sensitivity according to an embodiment of the present disclosure.
  • FIG. 3 is a diagram illustrating an example of pixel sensitivity according to an embodiment of the present disclosure.
  • FIG. 2 is a diagram illustrating a configuration example of a pixel according to a first embodiment of the present disclosure.
  • FIG. 2 is a diagram illustrating a configuration example of a pixel according to a first embodiment of the present disclosure.
  • FIG. 2 is a diagram illustrating a configuration example of a pixel according to a first embodiment of the present disclosure.
  • FIG. 2 is a diagram illustrating a configuration example of a pixel according to a first embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating a configuration example of a pixel according to a second embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating another configuration example of a pixel according to the first embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating another configuration example of the on-chip lens according to the first embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating a configuration example of a pixel according to a second embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating a configuration example of a pixel according to a second embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating a configuration example of a pixel according to a third embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating a configuration example of a pixel according to a third embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating a configuration example of a pixel according to a fourth embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating a configuration example of a pixel according to a fourth embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating a configuration example of a pixel according to a fourth embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating a configuration example of a pixel according to a fourth embodiment of the present disclosure. It is a figure showing the example of composition of the light shielding wall concerning the 4th embodiment of this indication. It is a figure showing the example of composition of the light shielding wall concerning the 4th embodiment of this indication. It is a figure showing the example of composition of the light shielding wall concerning the 4th embodiment of this indication. It is a figure showing the example of composition of the light shielding wall concerning the 4th embodiment of this indication. It is a figure showing the example of composition of the light shielding wall concerning the 4th embodiment of this indication.
  • FIG. 7 is a diagram illustrating another configuration example of a pixel according to the fourth embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating another configuration example of a pixel according to the fourth embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating another configuration example of a pixel according to the fourth embodiment of the present disclosure.
  • FIG. 7 is a diagram illustrating a
  • FIG. 1 is a diagram illustrating a configuration example of an image sensor according to an embodiment of the present disclosure. This figure is a block diagram showing an example of the configuration of the image sensor 10. As shown in FIG.
  • the image sensor 10 is a semiconductor device that generates image data of a subject.
  • the image sensor 10 includes a pixel array section 11, a vertical drive section 12, a column signal processing section 13, and a control section 14.
  • the pixel array section 11 is configured by arranging a plurality of pixels 100.
  • the pixel array section 11 in the figure represents an example in which a plurality of pixels 100 are arranged in the shape of a two-dimensional matrix.
  • the pixel 100 includes a photoelectric conversion unit that performs photoelectric conversion of incident light, and generates an image signal of a subject based on the incident light.
  • a photodiode can be used for this photoelectric conversion section.
  • Signal lines 15 and 16 are wired to each pixel 100.
  • the pixel 100 is controlled by a control signal transmitted through a signal line 15 to generate an image signal, and outputs the generated image signal through a signal line 16.
  • the signal line 15 is arranged for each row in the shape of a two-dimensional matrix, and is wired in common to a plurality of pixels 100 arranged in one row.
  • the signal line 16 is arranged for each column in the shape of a two-dimensional matrix, and is commonly wired to a plurality of pixels 100 arranged in one column.
  • the vertical drive unit 12 generates the control signal for the pixel 100 described above.
  • the vertical drive section 12 in the figure generates a control signal for each row of the two-dimensional matrix of the pixel array section 11 and sequentially outputs it via the signal line 15.
  • the column signal processing unit 13 processes image signals generated by the pixels 100.
  • the column signal processing section 13 in the figure simultaneously processes image signals from a plurality of pixels 100 arranged in one row of the pixel array section 11 that are transmitted via the signal line 16.
  • image signals for example, analog-to-digital conversion that converts an analog image signal generated by the pixel 100 into a digital image signal, or correlated double sampling (CDS) that removes offset errors in the image signal may be performed. Can be done.
  • the processed image signal is output to a circuit or the like external to the image sensor 10.
  • the control section 14 controls the vertical drive section 12 and the column signal processing section 13.
  • the control unit 14 in the figure generates control signals for controlling the vertical drive unit 12 and the column signal processing unit 13 based on data input from an external circuit or the like that instructs a clock, an operation mode, and the like.
  • the control section 14 outputs control signals via signal lines 17 and 18, respectively, to control the vertical drive section 12 and the column signal processing section 13.
  • the column signal processing section 13 is an example of a processing circuit described in the claims.
  • FIG. 2 is a diagram illustrating an example configuration of a pixel according to an embodiment of the present disclosure.
  • This figure is a plan view showing an example of the configuration of the pixel 100.
  • the pixels 100 are arranged in the pixel array section 11.
  • the figure shows an example in which pixels 100 are arranged in a two-dimensional matrix.
  • "R”, “Gr”, “Gb”, and “B” attached to the pixel 100 in the figure represent the types of color filters described later.
  • “R” in the figure represents a color filter (color filter 161) corresponding to red light.
  • “Gr” represents a color filter (color filter 162) corresponding to green light.
  • Gb represents a color filter (color filter 163) corresponding to green light.
  • B represents a color filter (color filter 164) corresponding to blue light.
  • the white rectangles in the figure represent color filters 162 and 163 corresponding to green light. Further, the diagonally hatched rectangle downward to the right in the figure represents the color filter 161 corresponding to red light. Further, the diagonally hatched rectangle upward to the right in the figure represents the color filter 164 corresponding to blue light.
  • the rectangle in the figure represents the area of the pixel 100.
  • a pixel in which a color filter 161 corresponding to red light is arranged is referred to as a red pixel 100a.
  • the pixels in which the color filters 162 and 163 corresponding to green light are arranged are respectively referred to as a green pixel 100b and a green pixel 100c.
  • a pixel in which a color filter 164 corresponding to blue light is arranged is referred to as a blue pixel 100d.
  • a plurality of adjacent pixels are collectively referred to as a pixel block.
  • Color filters of the same color are arranged in the pixels of this pixel block.
  • An on-chip lens which will be described later, is commonly arranged in this pixel block.
  • This figure shows an example of a pixel block composed of four pixels 100 arranged in two rows and two columns.
  • a pixel block in which the red pixels 100a are arranged in two rows and two columns is referred to as a red pixel block 210.
  • Pixel blocks in which the green pixels 100b and the green pixels 100c are arranged in two rows and two columns are referred to as a green pixel block 220 and a green pixel block 230, respectively.
  • a pixel block in which blue pixels 100d are arranged in two rows and two columns is referred to as a blue pixel block 240.
  • the pixel block can be composed of n ⁇ n (an integer of 2 or more) pixels 100.
  • a plurality of adjacent pixel blocks are collectively referred to as a pixel group.
  • Color filters of the same color are arranged in the pixels of this pixel group.
  • This figure shows an example of a pixel group composed of four pixel blocks arranged in two rows and two columns.
  • a pixel group composed of red pixel blocks 210 arranged in two rows and two columns is referred to as a red pixel group 310.
  • Pixel groups in which the green pixel block 220 and the green pixel block 230 are arranged in two rows and two columns are referred to as a green pixel group 320 and a green pixel group 330, respectively.
  • a pixel group constituted by blue pixel blocks 240 arranged in two rows and two columns is referred to as a blue pixel group 340.
  • red pixel group 310 green pixel groups 320 and 330, and blue pixel group 340 are arranged in a Bayer array.
  • a pixel group can be composed of n ⁇ n (n is an integer of 2 or more) pixel blocks.
  • the image sensor 10 including the pixel array section 11 shown in the figure can adjust the resolution of the image to be captured.
  • the highest resolution can be obtained when outputting an image signal for each pixel 100.
  • a medium resolution can be obtained.
  • the lowest resolution can be obtained.
  • the sensitivity difference between the pixels 100 within a pixel group poses a problem. This is because the image quality deteriorates when switching the resolution.
  • FIGS. 3A-3D are diagrams illustrating examples of pixel sensitivities according to embodiments of the present disclosure. This figure is a diagram illustrating variations in sensitivity of pixels 100 in a pixel group. The pixels 100 have variations in sensitivity due to variations in the manufacturing process and the influence of pixels 100 in other adjacent pixel groups.
  • FIG. 3A is a diagram showing sensitivity variations of the red pixels 100a of the red pixel group 310.
  • “Lo” represents relatively low sensitivity
  • “Mid” represents medium sensitivity
  • “Hi” represents relatively high sensitivity.
  • the red pixel 100a in the center has low sensitivity
  • the red pixel 100a in the corner has high sensitivity
  • the red pixel 100a on the side has medium sensitivity.
  • FIG. 3B is a diagram showing sensitivity variations of the green pixels 100b of the green pixel group 320. As shown in the figure, the green pixels 100b on the upper and lower sides have low sensitivity, and the eight green pixels 100b in the center horizontal direction have relatively high sensitivity.
  • FIG. 3C is a diagram showing sensitivity variations of the green pixels 100c of the green pixel group 330. As shown in the figure, the green pixels 100c on the right and left sides have low sensitivity, and the eight green pixels 100c in the center vertical direction have relatively high sensitivity.
  • FIG. 3D is a diagram showing sensitivity variations of the blue pixels 100d of the blue pixel group 340. As shown in the figure, the blue pixel 100d in the center has low sensitivity, and the blue pixel 100d in the corner has high sensitivity. The blue pixel 100d on the side has medium sensitivity.
  • Sensitivity can be adjusted by adjusting the on-chip lens. Alternatively, this can be achieved by arranging a light-shielding wall that blocks incident light from entering the pixel 100 and adjusting this light-shielding wall. An example of adjusting an on-chip lens will be described next.
  • FIG. 4 is a diagram illustrating a configuration example of a pixel according to the first embodiment of the present disclosure.
  • This figure is a plan view showing an example of an on-chip lens arranged in a pixel block.
  • an on-chip lens is arranged for each pixel block.
  • the region indicated by the dashed dotted line in the figure represents the on-chip lens.
  • the on-chip lens can be configured to have a substantially rectangular shape in plan view.
  • the on-chip lens shown in the figure represents an example in which the corner portions are formed by curved lines. Further, the on-chip lens in the same figure represents an example in which the on-chip lens is configured in a shape that contacts another adjacent on-chip lens.
  • An on-chip lens 171 is arranged in the red pixel group 310.
  • An on-chip lens 172 is arranged in the green pixel block 220.
  • An on-chip lens 173 is arranged in the green pixel block 230.
  • An on-chip lens 174 is arranged in the blue pixel block 240.
  • the on-chip lens 171 of the red pixel block 210 can be configured to extend into the areas of the green pixel groups 320 and 330. That is, the on-chip lens 171 can be configured in a shape that covers the area of the pixels 100 of the adjacent green pixel groups 320 and 330. Further, the on-chip lens 172 of the green pixel group 320 can be configured to extend into the area of the blue pixel group 340. Further, the on-chip lens 173 of the green pixel group 330 can be configured to extend into the area of the blue pixel group 340. Further, the on-chip lens 174 of the blue pixel group 340 may be configured to have a shape that is reduced inward of the pixel group.
  • the on-chip lens 172 of the green pixel group 320 By configuring the on-chip lens 172 of the green pixel group 320 in a shape that extends into the area of the upper and lower blue pixel groups 340, the incident light of the green pixels 100b on the upper and lower side portions of the green pixel group 320 is condensed. The range can be widened and the sensitivity can be increased. Further, the on-chip lens 172 of the green pixel group 320 is configured to have a shape that reduces in the right direction and left direction adjacent to the red pixel group 310. Thereby, the sensitivity of the green pixel 100b at the center of the left and right sides of the green pixel group 320 can be lowered. Thereby, the variation in sensitivity shown in FIG. 3B can be reduced.
  • the on-chip lens 173 of the green pixel group 330 By configuring the on-chip lens 173 of the green pixel group 330 in a shape that extends into the areas of the left and right blue pixel groups 340, the focusing range of the incident light of the green pixel 100c on the right and left sides of the green pixel group 330 is reduced. can be made wider and the sensitivity can be increased. Furthermore, the on-chip lens 173 of the green pixel group 330 is configured to have a shape that reduces in the upward and downward directions adjacent to the red pixel group 310. Thereby, the sensitivity of the green pixel 100c at the center of the upper and lower sides of the green pixel group 330 can be lowered. Thereby, the variations in sensitivity shown in FIG. 3C can be reduced.
  • FIG. 5 is a diagram illustrating a configuration example of a pixel according to the first embodiment of the present disclosure.
  • This figure is a cross-sectional view showing an example of the configuration of the pixel 100.
  • This figure is a sectional view taken along line aa' in FIG. 4.
  • the green pixel 100b of the green pixel block 220 of the green pixel group 320 and the blue pixel 100d of the blue pixel block 240 of the blue pixel group 340 are shown.
  • the configuration of the pixel 100 will be described using the blue pixel 100d as an example.
  • the blue pixel 100d includes a semiconductor substrate 120, a wiring region 140, a separation section 131, and a color filter 164.
  • the semiconductor substrate 120 is a semiconductor substrate on which the diffusion layer of the semiconductor element of the pixel 100 is arranged.
  • the semiconductor substrate 120 can be made of silicon (Si), for example.
  • Semiconductor elements and the like are arranged in a well region formed in the semiconductor substrate 120.
  • the semiconductor substrate 120 in the figure is configured as a p-type well region.
  • a semiconductor element can be formed by arranging an n-type or p-type semiconductor region in this p-type well region.
  • the photoelectric conversion unit 101 is shown as an example on the semiconductor substrate 120 in the figure.
  • This photoelectric conversion section 101 is composed of an n-type semiconductor region 121.
  • a photodiode formed of a pn junction at an interface between an n-type semiconductor region 121 and a surrounding p-type well region corresponds to the photoelectric conversion section 101.
  • the wiring region 140 is a region disposed on the front surface side of the semiconductor substrate 120 in which element wiring is formed. This wiring region 140 is a region where wiring for transmitting signals to elements of the semiconductor substrate 120 is formed.
  • the separation section 131 is arranged at a boundary between the pixels 100 on the semiconductor substrate 120 and separates the pixels 100 electrically and optically.
  • This separation section 131 can be formed of an insulator embedded in the semiconductor substrate 120.
  • the isolation portion 131 can be formed, for example, by placing an insulator such as SiO 2 in a groove portion that penetrates the semiconductor substrate 120 and is formed at the boundary of the pixel 100 .
  • the separating portion 131 can also be configured to have a shape that reaches near the center of the semiconductor substrate 120 from the back side of the semiconductor substrate 120 (does not penetrate the semiconductor substrate 120).
  • a color filter is an optical filter that transmits incident light of a predetermined wavelength among the incident light.
  • a color filter that transmits red light, green light, and blue light can be used.
  • the pixel 100 generates an image signal of incident light having a wavelength corresponding to the color filter.
  • color filters 161, 162, 163, and 164 are arranged in the red pixel 100a, the green pixel 100b, the green pixel 100c, and the blue pixel 100d, respectively.
  • a light shielding wall 150 is arranged in the color filter area at the boundary between the pixel groups. This light blocking wall 150 blocks incident light. By arranging the light blocking wall 150, it is possible to block incident light obliquely entering from the adjacent pixel 100.
  • the on-chip lens is a lens that is commonly disposed in a plurality of pixels 100 forming the pixel block 210 and the like as described above.
  • the on-chip lens shown in the figure has a hemispherical cross section and focuses incident light on a photoelectric conversion section.
  • the on-chip lens can be made of an organic material such as acrylic resin or an inorganic material such as silicon nitride (SiN).
  • the on-chip lens 172 is arranged in the green pixel block 220, and the on-chip lens 174 is arranged in the blue pixel block 240.
  • the on-chip lens 172 of the green pixel block 220 is configured in such a shape that its end extends into the region of the blue pixel 100d of the blue pixel group 340.
  • FIG. 6 is a diagram illustrating an example of the configuration of a pixel according to the first embodiment of the present disclosure.
  • This figure like FIG. 5, is a cross-sectional view showing an example of the configuration of the pixel 100.
  • This figure is a sectional view taken along line bb' in FIG. 4.
  • the green pixel 100c of the green pixel block 230 of the green pixel group 330 and the blue pixel 100d of the blue pixel block 240 of the blue pixel group 340 are shown.
  • the on-chip lens 173 of the green pixel block 230 is configured such that its end portion extends into the area of the blue pixel 100d of the blue pixel group 340.
  • FIG. 7 is a diagram showing an example of the configuration of a pixel according to the first embodiment of the present disclosure.
  • This figure like FIG. 5, is a cross-sectional view showing an example of the configuration of the pixel 100.
  • This figure is a sectional view taken along line c-c' in FIG. 4.
  • the red pixel 100a of the red pixel block 210 of the red pixel group 310 and the blue pixel 100d of the blue pixel block 240 of the blue pixel group 340 are shown.
  • the on-chip lens 171 of the red pixel block 210 is configured in such a shape that its end portion protrudes into the area of the blue pixel 100d of the blue pixel group 340.
  • FIG. 8 is a diagram illustrating a configuration example of a pixel according to the first embodiment of the present disclosure.
  • This figure like FIG. 5, is a cross-sectional view showing an example of the configuration of the pixel 100.
  • This figure shows the configuration of pixels 100 at the peripheral portion of the pixel array section 11. Since the image height is high at the peripheral portion of the pixel array section 11, the on-chip lens 172 and the like are configured to have a small curvature. In this way, the curvature of the on-chip lens 172 and the like can be adjusted according to the image height.
  • FIG. 9 is a diagram illustrating another configuration example of a pixel according to the first embodiment of the present disclosure.
  • This figure like FIG. 5, is a cross-sectional view showing an example of the configuration of the pixel 100.
  • This figure shows an example in which the light-shielding wall 150 is arranged in a color filter area at the boundary of pixel blocks (pixel blocks 220, etc.). Note that the light shielding wall 150 can also be arranged in a color filter area at the boundary of pixels (such as the pixel 100b).
  • FIG. 10 is a diagram showing another configuration example of the on-chip lens according to the first embodiment of the present disclosure. This figure shows an example of an on-chip lens configured to have a rectangular shape in plan view.
  • the image sensor 10 adjusts the shape and the like of the on-chip lens for each pixel block. Thereby, variations in sensitivity of the pixels 100 in the pixel group can be reduced.
  • the image sensor 10 of the first embodiment described above uses a substantially rectangular on-chip lens.
  • the image sensor 10 according to the second embodiment of the present disclosure differs from the above-described first embodiment in that an on-chip lens in which a recessed portion is formed is used.
  • FIG. 11 is a diagram illustrating a configuration example of a pixel according to the second embodiment of the present disclosure. This figure is a plan view showing an example of an on-chip lens arranged in a pixel block similarly to FIG. 4.
  • the on-chip lens 172 and the like shown in FIG. 4 differ from the on-chip lens 172 and the like shown in FIG. 4 in that a concave portion 176 is arranged in the center.
  • the concave portion 176 etc. is adjusted. For example, in a pixel block with large variations in sensitivity, the range of the concave portion 176 or the like of the on-chip lens is widened to reduce the light condensing degree. Thereby, variations in sensitivity of the pixels 100 in the pixel block can be adjusted.
  • FIG. 12 is a diagram illustrating a configuration example of a pixel according to the second embodiment of the present disclosure. This figure, like FIG. 5, is a cross-sectional view showing an example of the configuration of the pixel 100.
  • a concave portion 176 is arranged in the on-chip lens 172 shown in the figure. Further, a recess 178 is arranged in the on-chip lens 174 shown in the figure.
  • the configuration of the image sensor 10 other than this is the same as the configuration of the image sensor 10 in the first embodiment of the present disclosure, so a description thereof will be omitted.
  • the image sensor 10 according to the second embodiment of the present disclosure can further adjust sensitivity variations by forming the recess 176 and the like in the on-chip lens 172 and the like.
  • FIG. 13 is a diagram illustrating a configuration example of a pixel according to the third embodiment of the present disclosure.
  • the green pixel 100b of the green pixel block 220 of the green pixel group 320 and the red pixel 100a of the red pixel block 210 of the red pixel group 310 are shown.
  • the on-chip lens 172 can be configured to have a lower height than the on-chip lens 171. By adjusting the height of the on-chip lens 172, the focal spot can be adjusted and variations in sensitivity can be adjusted.
  • FIG. 14 is a diagram illustrating an example of the configuration of a pixel according to the third embodiment of the present disclosure.
  • the green pixel 100c of the green pixel block 230 of the green pixel group 330 and the blue pixel 100d of the blue pixel block 240 of the blue pixel group 340 are shown.
  • the on-chip lens 174 can be configured to have a lower height than the on-chip lens 173.
  • the on-chip lens 173 can be configured to have the same height as the on-chip lens 172.
  • the configuration of the image sensor 10 other than this is the same as the configuration of the image sensor 10 in the first embodiment of the present disclosure, so a description thereof will be omitted.
  • the image sensor 10 of the first embodiment described above had an on-chip lens adjusted.
  • the image sensor 10 according to the fourth embodiment of the present disclosure differs from the above-described first embodiment in that the light shielding wall is adjusted.
  • FIG. 15 is a diagram illustrating a configuration example of a pixel according to the fourth embodiment of the present disclosure.
  • This figure like FIG. 4, is a plan view showing an example of the configuration of the pixel 100.
  • the red pixel group 310, the green pixel group 320, the green pixel group 330, and the blue pixel group 340 in the figure differ from the pixel 100 in FIG. 4 in that a light-shielding wall 151 and the like are arranged.
  • a light shielding wall 151 is arranged at the red pixel 100a on the outer periphery.
  • This light-shielding wall 151 is a light-shielding wall configured to have a wider width in plan view than the light-shielding wall 150 described with reference to FIG.
  • the light shielding wall 151 can be configured to have a width of 20 nm.
  • a light-shielding wall 153 is arranged in the horizontal direction at the center.
  • This light shielding wall 153 can be configured to have the same width as the light shielding wall 151.
  • a light shielding wall 154 is arranged in the vertical direction at the center.
  • This light shielding wall 154 can be configured to have the same width as the light shielding wall 151.
  • a light shielding wall 152 is arranged in the blue pixel 100d on the outer periphery.
  • This light-shielding wall 152 can also be configured to have the same width as the light-shielding wall 151.
  • the light shielding wall arranged between the red pixel group 310 and the green pixel groups 320 and 330 can be configured to extend into the area of the red pixel group 310.
  • the light blocking wall disposed between the blue pixel group 340 and the green pixel groups 320 and 330 may be configured to extend into the area of the blue pixel group 340.
  • a light shielding wall 153 is disposed in the center of the green pixel group 320 in a direction perpendicular to the direction adjacent to the blue pixel group 340, and a light shielding wall 153 in the direction perpendicular to the direction adjacent to the blue pixel group 340 is arranged in the center of the green pixel group 330.
  • a light shielding wall 154 is arranged. These light shielding walls can reduce variations in sensitivity of the pixels 100.
  • FIG. 16 is a diagram illustrating a configuration example of a pixel according to the fourth embodiment of the present disclosure.
  • This figure like FIG. 5, is a cross-sectional view showing an example of the configuration of the pixel 100.
  • the green pixel 100b of the green pixel block 220 of the green pixel group 320 and the blue pixel 100d of the blue pixel block 240 of the blue pixel group 340 are shown.
  • a light shielding wall 153 is arranged at the center.
  • a light-shielding wall 152 is arranged at the periphery.
  • FIG. 17 is a diagram showing an example of the configuration of a pixel according to the fourth embodiment of the present disclosure.
  • This figure like FIG. 6, is a cross-sectional view showing a configuration example of the pixel 100.
  • the green pixel 100c of the green pixel block 230 of the green pixel group 330 and the blue pixel 100d of the blue pixel block 240 of the blue pixel group 340 are shown.
  • a light shielding wall 152 is arranged at the periphery.
  • [Shading wall] 18A to 18D are diagrams illustrating configuration examples of a light shielding wall according to a fourth embodiment of the present disclosure. This figure is a sectional view showing an example of the configuration of the light shielding wall 150. Note that the light shielding walls 151-154 can also have a similar configuration. Note that a protective film 139 is shown on the semiconductor substrate 120 in the figure.
  • FIG. 18A shows an example of a light shielding wall 150 configured by laminating a light shielding film 192 on a base 191.
  • the base 191 can be made of titanium (Ti) or titanium nitride (TiN).
  • the light shielding film 192 shown in the figure can be made of tungsten (W).
  • FIG. 18B shows an example of a light shielding wall 150 configured by laminating a base 191, a light shielding film 192, and an oxide film 193.
  • SiO 2 can be used for the oxide film 193.
  • FIG. 18C shows an example of a light shielding wall 150 configured by laminating bases 191 and 194 and a low refractive index member 195.
  • FIG. 18D shows an example of a light-shielding wall 150 formed by a void 196.
  • a film 197 for sealing the void 196 is disposed on the light shielding wall 150 shown in the figure.
  • FIG. 19 is a diagram illustrating another configuration example of a pixel according to the fourth embodiment of the present disclosure.
  • This figure shows an example in which a light shielding wall is arranged around a pixel block.
  • a light shielding wall 155 is arranged between adjacent red pixel blocks 210.
  • This light shielding wall 155 can be configured to have the same width as the light shielding wall 150, for example.
  • a light shielding wall 155 is arranged in a portion between adjacent green pixel blocks 220 where a light shielding wall 153 is not arranged.
  • a light shielding wall 155 is arranged in a portion between adjacent green pixel blocks 230 where a light shielding wall 154 is not arranged.
  • a light shielding wall 155 is arranged between adjacent blue pixel blocks 240.
  • FIG. 20 is a diagram illustrating another configuration example of a pixel according to the fourth embodiment of the present disclosure.
  • This figure shows an example in which a light-shielding wall is arranged around a pixel.
  • a light shielding wall 156 is arranged between adjacent red pixels 100a.
  • This light-shielding wall 156 can be configured to have the same width as the light-shielding wall 150, for example.
  • a light shielding wall 156 is arranged between adjacent green pixels 100b.
  • a light shielding wall 156 is arranged between adjacent green pixels 100c.
  • a light shielding wall 156 is arranged between adjacent blue pixels 100d.
  • FIG. 21 is a diagram illustrating another configuration example of a pixel according to the fourth embodiment of the present disclosure.
  • This figure shows an example in which the width of the light-shielding wall is adjusted for each pixel 100 in a pixel group.
  • a light-shielding wall 151 is arranged in the red pixel 100a at the corner of the red pixel group 310 in the figure, and a light-shielding wall 157 is arranged in the red pixel 100a at the side.
  • the light shielding wall 157 can be configured to have the same width as the light shielding wall 150, for example.
  • a light-shielding wall 152 is arranged in the blue pixel 100d at the corner of the blue pixel group 340 in the figure, and a light-shielding wall 157 is arranged in the blue pixel 100d at the side part.
  • the configuration of the image sensor 10 other than this is the same as the configuration of the image sensor 10 in the first embodiment of the present disclosure, so a description thereof will be omitted.
  • the image sensor 10 adjusts the shape of the light shielding wall 151 and the like for each pixel block. Thereby, variations in sensitivity of the pixels 100 in the pixel group can be reduced.
  • FIG. 22 is a diagram illustrating a configuration example of a pixel according to the fifth embodiment of the present disclosure.
  • This figure like FIG. 6, is a cross-sectional view showing a configuration example of the pixel 100.
  • the green pixel 100c of the green pixel block 230 of the green pixel group 330 and the blue pixel 100d of the blue pixel block 240 of the blue pixel group 340 are shown.
  • the on-chip lens 172 shown in the figure can also be configured to extend into the area of the blue pixel group 340.
  • a light shielding wall 152 having a shape that extends into the area of the blue pixel group 340 can be arranged.
  • the configuration of the image sensor 10 other than this is the same as the configuration of the image sensor 10 in the first embodiment of the present disclosure, so a description thereof will be omitted.
  • the image sensor 10 can reduce variations in sensitivity of the pixels 100 in the pixel group by adjusting the on-chip lens and the light shielding wall.
  • a common on-chip lens includes a color filter that transmits red light, and red pixels that perform photoelectric conversion of incident light that has passed through the color filter to generate an image signal corresponding to the red light are arranged in 2 rows and 2 columns and have a common on-chip lens.
  • Green pixels that generate image signals are arranged in 2 rows and 2 columns, and a common on-chip lens is arranged in a green pixel group in which green pixel blocks are arranged in 2 rows and 2 columns, and a color filter that transmits blue light.
  • a pixel array section configured by blue pixel groups arranged in 2 rows and 2 columns and arranged in a Bayer array;
  • the on-chip lens is configured to have a different shape for each of the red pixel group, the green pixel group, and the blue pixel group.
  • a common on-chip lens includes a color filter that transmits red light, and red pixels that perform photoelectric conversion of incident light that has passed through the color filter to generate an image signal corresponding to the red light are arranged in 2 rows and 2 columns and have a common on-chip lens.
  • a red pixel group in which red pixel blocks are arranged in two rows and two columns, and a color filter that transmits green light are provided, and the incident light transmitted through the color filter is photoelectrically converted to correspond to green light.
  • Green pixels that generate image signals are arranged in 2 rows and 2 columns, and a common on-chip lens is arranged in a green pixel group in which green pixel blocks are arranged in 2 rows and 2 columns, and a color filter that transmits blue light.
  • a blue pixel block in which blue pixels are arranged in two rows and two columns and a common on-chip lens is arranged, photoelectrically converting incident light transmitted through the color filter to generate an image signal corresponding to blue light.
  • a common on-chip lens includes a color filter that transmits red light, and red pixels that perform photoelectric conversion of incident light that has passed through the color filter to generate an image signal corresponding to the red light are arranged in 2 rows and 2 columns and have a common on-chip lens.
  • a red pixel group in which red pixel blocks are arranged in two rows and two columns, and a color filter that transmits green light are provided, and the incident light transmitted through the color filter is photoelectrically converted to correspond to green light.
  • Green pixels that generate image signals are arranged in 2 rows and 2 columns, and a common on-chip lens is arranged in a green pixel group in which green pixel blocks are arranged in 2 rows and 2 columns, and a color filter that transmits blue light.
  • a blue pixel block in which blue pixels are arranged in two rows and two columns and a common on-chip lens is arranged, photoelectrically converting incident light transmitted through the color filter to generate an image signal corresponding to blue light.
  • a pixel array section configured by blue pixel groups arranged in two rows and two columns in a Bayer array; and a light shielding wall disposed in a color filter area between the red pixel group, the green pixel group, and the blue pixel group,
  • the light shielding wall is configured to have a different shape for each of the red pixel group, the green pixel group, and the blue pixel group.
  • the light-shielding wall adjacent to the green pixel at the corner of the red pixel group is configured to project into the area of the red pixel group.
  • the light shielding wall arranged between the blue pixel group and the green pixel group has a shape that extends into the area of the blue pixel group.
  • the light-shielding wall adjacent to the green pixel at the corner of the blue pixel group is configured to project into the area of the blue pixel group.
  • the red pixels arranged on the outer periphery of the red pixel group are provided with the light shielding wall having a width different from that of the red pixels arranged on the side parts, and The imaging according to (10), wherein the blue pixels arranged at corners of the blue pixels arranged at the outer periphery of the screen have the light-shielding wall having a width different from that of the blue pixels arranged at the side parts. element.
  • the light-shielding wall is further arranged in the center of the green pixel group in a direction perpendicular to a direction adjacent to the blue pixel group.
  • a common on-chip lens includes a color filter that transmits red light, and red pixels that perform photoelectric conversion of incident light that has passed through the color filter to generate an image signal corresponding to the red light are arranged in 2 rows and 2 columns and have a common on-chip lens.
  • Green pixels that generate image signals are arranged in 2 rows and 2 columns, and a common on-chip lens is arranged in a green pixel group in which green pixel blocks are arranged in 2 rows and 2 columns, and a color filter that transmits blue light.
  • a pixel array section configured by blue pixel groups arranged in two rows and two columns in a Bayer array; a light shielding wall disposed in a color filter area between the red pixel group, the green pixel group, and the blue pixel group; a processing circuit that processes the image signal;
  • the light shielding wall is configured to have a different shape for each of the red pixel group, the green pixel group, and the blue pixel group.
  • imaging elements 11 pixels 11 pixel array part 13 column signal processing unit 100 pixel 100a 100a red pixels 100B, 100c green pixel 100dded blue pixels 150-157 light -shielding wall 161-164 Color filter 171-174 ozip lens 176, 178 concave portion 210 red pixel block 220 , 230 green pixel block 240 blue pixel block 310 red pixel group 320, 330 green pixel group 340 blue pixel group

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  • Color Television Image Signal Generators (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
PCT/JP2023/005628 2022-03-25 2023-02-17 撮像素子及び撮像装置 Ceased WO2023181735A1 (ja)

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EP23774334.9A EP4503641A4 (en) 2022-03-25 2023-02-17 IMAGING ELEMENT AND IMAGING DEVICE
US18/846,379 US12615447B2 (en) 2022-03-25 2023-02-17 Imaging element and imaging device
CN202380021830.XA CN118715783A (zh) 2022-03-25 2023-02-17 摄像元件和摄像装置
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