KR20240166529A - 촬상 소자 및 촬상 장치 - Google Patents

촬상 소자 및 촬상 장치 Download PDF

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Publication number
KR20240166529A
KR20240166529A KR1020247034659A KR20247034659A KR20240166529A KR 20240166529 A KR20240166529 A KR 20240166529A KR 1020247034659 A KR1020247034659 A KR 1020247034659A KR 20247034659 A KR20247034659 A KR 20247034659A KR 20240166529 A KR20240166529 A KR 20240166529A
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South Korea
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Pending
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KR1020247034659A
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English (en)
Korean (ko)
Inventor
미츠히로 다케우치
사치오 니시
데츠야 미나카와
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20240166529A publication Critical patent/KR20240166529A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H01L27/14621—
    • H01L27/14623—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Color Television Image Signal Generators (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020247034659A 2022-03-25 2023-02-17 촬상 소자 및 촬상 장치 Pending KR20240166529A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-050590 2022-03-25
JP2022050590 2022-03-25
PCT/JP2023/005628 WO2023181735A1 (ja) 2022-03-25 2023-02-17 撮像素子及び撮像装置

Publications (1)

Publication Number Publication Date
KR20240166529A true KR20240166529A (ko) 2024-11-26

Family

ID=88101167

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247034659A Pending KR20240166529A (ko) 2022-03-25 2023-02-17 촬상 소자 및 촬상 장치

Country Status (7)

Country Link
US (1) US12615447B2 (https=)
EP (1) EP4503641A4 (https=)
JP (1) JPWO2023181735A1 (https=)
KR (1) KR20240166529A (https=)
CN (1) CN118715783A (https=)
TW (1) TW202408223A (https=)
WO (1) WO2023181735A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210144315A1 (en) 2019-11-12 2021-05-13 Samsung Electronics Co., Ltd. Image sensor, imaging device having the same, and method of operating the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006269735A (ja) 2005-03-24 2006-10-05 Sony Corp 固体撮像装置および固体撮像装置の製造方法
JP4212606B2 (ja) * 2006-05-12 2009-01-21 シャープ株式会社 撮像素子の製造方法
JP4212605B2 (ja) * 2006-05-12 2009-01-21 シャープ株式会社 撮像素子および撮像素子の製造方法
JP4968893B2 (ja) * 2006-09-14 2012-07-04 キヤノン株式会社 撮像素子及び撮像システム
FR2929478B1 (fr) * 2008-03-28 2011-04-01 St Microelectronics Sa Capteur d'image a sensibilite amelioree
KR101012235B1 (ko) * 2008-09-04 2011-02-08 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
JP5702625B2 (ja) 2011-02-22 2015-04-15 ソニー株式会社 撮像素子、撮像素子の製造方法、画素設計方法および電子機器
JP6233188B2 (ja) * 2013-12-12 2017-11-22 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
US10680022B2 (en) 2013-12-12 2020-06-09 Sony Corporation Solid state imaging device, manufacturing method of the same, and electronic equipment
JP2015153975A (ja) * 2014-02-18 2015-08-24 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法および電子機器
JP6237431B2 (ja) 2014-04-15 2017-11-29 ソニー株式会社 焦点検出装置、電子機器
CN107004685B (zh) * 2014-12-18 2022-06-14 索尼公司 固体摄像器件和电子装置
KR20200037244A (ko) 2017-08-18 2020-04-08 소니 주식회사 촬상 소자 및 촬상 장치
KR102423990B1 (ko) 2017-11-22 2022-07-21 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자 및 전자기기
JP6970595B2 (ja) 2017-11-24 2021-11-24 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器
JP6607275B2 (ja) 2018-03-28 2019-11-20 ソニー株式会社 固体撮像装置、および電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210144315A1 (en) 2019-11-12 2021-05-13 Samsung Electronics Co., Ltd. Image sensor, imaging device having the same, and method of operating the same

Also Published As

Publication number Publication date
US12615447B2 (en) 2026-04-28
TW202408223A (zh) 2024-02-16
CN118715783A (zh) 2024-09-27
US20250203228A1 (en) 2025-06-19
JPWO2023181735A1 (https=) 2023-09-28
EP4503641A4 (en) 2025-09-24
EP4503641A1 (en) 2025-02-05
WO2023181735A1 (ja) 2023-09-28

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Date Code Title Description
PA0105 International application

Patent event date: 20241017

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application