WO2023179650A1 - 一种薄片细线化大尺寸太阳能级硅片用切割液 - Google Patents

一种薄片细线化大尺寸太阳能级硅片用切割液 Download PDF

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WO2023179650A1
WO2023179650A1 PCT/CN2023/083042 CN2023083042W WO2023179650A1 WO 2023179650 A1 WO2023179650 A1 WO 2023179650A1 CN 2023083042 W CN2023083042 W CN 2023083042W WO 2023179650 A1 WO2023179650 A1 WO 2023179650A1
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parts
ether
dispersant
cutting fluid
cutting
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PCT/CN2023/083042
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English (en)
French (fr)
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付明全
徐志群
孙彬
高大
郭翔
马伟萍
毕喜行
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高景太阳能股份有限公司
广东金湾高景太阳能科技有限公司
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Publication of WO2023179650A1 publication Critical patent/WO2023179650A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M173/00—Lubricating compositions containing more than 10% water
    • C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
    • C10M2207/04—Ethers; Acetals; Ortho-esters; Ortho-carbonates
    • C10M2207/046—Hydroxy ethers
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
    • C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
    • C10M2209/104—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing two carbon atoms only
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
    • C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
    • C10M2209/105—Polyethers, i.e. containing di- or higher polyoxyalkylene groups of alkylene oxides containing three carbon atoms only
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
    • C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
    • C10N2030/04—Detergent property or dispersant property
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
    • C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
    • C10N2030/06—Oiliness; Film-strength; Anti-wear; Resistance to extreme pressure
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
    • C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
    • C10N2030/18—Anti-foaming property

Definitions

  • the invention relates to the technical field of wire cutting processing in the photovoltaic industry, and specifically relates to a cutting fluid for thinning large-size solar grade silicon wafers into thin wafers.
  • the purpose of the present invention is to provide a cutting fluid for thinning large-size solar grade silicon wafers, which has excellent dispersion, dynamic and static wetting, defoaming and other properties. , can effectively improve the yield rate of silicon wafers and maintain the stability of the cutting process.
  • a cutting fluid for thinning large-size solar grade silicon wafers which consists of the following components in parts by weight: 25 to 40 parts of dispersant, 8 to 15 parts of wetting agent, and 8 to 12 parts of stabilizer , the balance of pure water; the total number of parts of each component is 100 parts;
  • the wetting agent is at least one of 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropenyl ether, and its structural formula is:
  • the degree of polymerization m of the polyoxyethylene ether is an integer between 3 and 8
  • the degree of polymerization p of the polyoxypropenyl ether is an integer between 0 and 6.
  • the cutting fluid consists of the following components by weight: 31 to 33 parts of dispersant, 9 to 11 parts of wetting agent, 8 to 12 parts of stabilizer, and the balance of pure water ; The total number of parts of each component is 100 parts.
  • the degree of polymerization n of the polyoxyethylene ether in the dispersant is 18 to 22.
  • the degree of polymerization m of the polyoxyethylene ether in the wetting agent is 4 to 6
  • the degree of polymerization n of the polyoxypropenyl ether is 3 to 5.
  • the stabilizer is ethylene glycol monopentyl ether, ethylene glycol monohexyl ether, ethylene glycol monooctyl ether, diethylene glycol monopentyl ether, diethylene glycol monohexyl ether, One or more combinations of triethylene glycol monohexyl ether.
  • the preparation method of the dispersant is as follows: use cyclohexanehexanol as the starting alcohol, KOH as the catalyst, pass in ethylene oxide, maintain a pressure of 0.1 to 0.4MPa to react, and take samples during the reaction After monitoring and testing the molecular weight and degree of polymerization to meet the requirements, prepare the dispersant.
  • the preparation method of the wetting agent is as follows: use 2,7-diyne-1,8-octanediol as the starting alcohol, KOH as the catalyst, pass in ethylene oxide, and maintain The reaction is carried out at a pressure of 0.1 to 0.4MPa, and the reaction process is monitored by sampling. After testing the molecular weight and degree of polymerization to meet the requirements, the wetting agent is prepared.
  • the dispersant used in the cutting fluid of the present invention is a polyether compound with a multi-branched structure.
  • the multi-branched structure can provide more active adsorption sites and better absorb and wrap the silica powder block polyether. It prevents the agglomeration of silicon powder particles and increases electrostatic repulsion, making the cutting fluid more efficient in dispersing silicon powder, further reducing particle scratches on the silicon wafer and reducing the roughness of the silicon wafer, and is more adaptable to large-sized, fine-grained products with a significant increase in silicon powder concentration. Linear and thin cutting environment, silicon powder dispersion effect is better.
  • the dispersant of the present invention itself has very excellent lubricating properties, which can effectively reduce the wear of the steel wire, better save the usage of a single knife of the steel wire and reduce the main roller torque in the cutting process, making the cutting process smoother.
  • the final silicon wafer TTV value and line mark value can be maintained at relatively excellent low-level values.
  • the wetting agent of the present invention is a double-hung bis-alkynyl alcohol polyether compound with a symmetrical structure.
  • the bis-alkynyl group can provide a stronger lipophilic conjugated carbon chain, and at the same time, the polyoxyethylene polyoxyethylene at both ends of the carbon chain
  • the propylene block structure can provide a hydrophilic structure, making its wetting performance more active and better than ordinary isomeric alcohol ethers, and it can provide excellent dynamic and static wetting properties to ensure that the surface of the diamond wire is wetted and Reduce the diamond wire breakage rate.
  • the cutting fluid provided by the present invention has excellent dispersion, dynamic wetting, static wetting, and defoaming properties, can improve the cutting yield of thin-line, large-size solar-grade silicon wafers, and effectively solve the problem of large-size silicon wafers. Problems such as difficulty in dispersing silicon powder, difficulty in wetting the cutting seams, and edge chipping and bright edges caused by reduced wetting performance when cutting to the rubber surface are encountered during the cutting process of cutting, thinning, and thinning of diamond wire diameters, so as to be able to Effectively improve the yield rate of silicon wafers and maintain the stability of the cutting process.
  • Figure 1 is a diagram of the cutting state of the cutting fluids of Example 3 and Comparative Example 5 of the present invention as the cutting position changes under the same cutting process conditions;
  • Figure 2 is a diagram of the internal state of the filter bag after cutting using the cutting fluids of Example 3 and Comparative Example 5 of the present invention under the same cutting process conditions;
  • Figure 3 is a state diagram of silicon wafers cut under the same cutting process conditions using the cutting fluids of Example 3 and Comparative Example 5 of the present invention
  • group A is the cutting fluid state diagram of Comparative Example 5
  • group B is the cutting fluid state diagram of Example 3.
  • a cutting fluid for thinning large-size solar grade silicon wafers which consists of the following components in parts by weight: 25 to 40 parts of dispersant, 8 to 15 parts of wetting agent, and 8 to 12 parts of stabilizer , the balance of pure water; the total number of parts of each component is 100 parts;
  • the dispersant is at least one of cyclohexanol polyoxyethylene ethers whose polymerization degree n is an integer between 10 and 25, and its structural formula is:
  • the wetting agent is at least one of 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropenyl ether, and its structural formula is:
  • the degree of polymerization m of the polyoxyethylene ether is an integer between 3 and 8
  • the degree of polymerization p of the polyoxypropenyl ether is an integer between 0 and 6.
  • the stabilizer is one of ethylene glycol monopentyl ether, ethylene glycol monohexyl ether, ethylene glycol monooctyl ether, diethylene glycol monopentyl ether, diethylene glycol monohexyl ether, and triethylene glycol monohexyl ether. one or more combinations.
  • a cutting fluid for thinning large-size solar grade silicon wafers including the following components in parts by weight: Dispersant: 30 parts of wetting agent, 10 parts of ethylene glycol monohexyl ether, 9 parts of pure water, balance.
  • the dispersant is cyclohexanol polyoxyethylene ether with a degree of polymerization n of polyoxyethylene ether of 12.
  • the wetting agent is 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropenyl ether, the degree of polymerization m of the polyoxyethylene ether is 7, and the degree of polymerization p of the polyoxypropenyl ether is 4.
  • a cutting fluid for thinning large-size solar grade silicon wafers including the following components in parts by weight: Dispersant: 39 parts of wetting agent, 14 parts of ethylene glycol monooctyl ether, 8.5 parts of pure water, balance.
  • the dispersant is cyclohexanexanol polyoxyethylene ether with a degree of polymerization n of polyoxyethylene ether of 16.
  • the wetting agent is 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropenyl ether, the degree of polymerization m of the polyoxyethylene ether is 6, and the degree of polymerization p of the polyoxypropenyl ether is 5.
  • a cutting fluid for thinning large-size solar grade silicon wafers including the following components in parts by weight: Dispersant 32.5 parts Wetting agent: 10.5 parts of triethylene glycol monohexyl ether, 10 parts of pure water, and the balance.
  • the dispersant is cyclohexanexanol polyoxyethylene ether with a degree of polymerization n of polyoxyethylene ether of 20.
  • the wetting agent is 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropenyl ether, the degree of polymerization m of the polyoxyethylene ether is 5, and the degree of polymerization p of the polyoxypropenyl ether is 4.
  • a cutting fluid for thinning large-size solar grade silicon wafers including the following components in parts by weight: Dispersant: 33 parts of wetting agent, 8 parts of diethylene glycol monohexyl ether, 10.5 parts of pure water, balance.
  • the dispersant is cyclohexanexanol polyoxyethylene ether with a degree of polymerization n of polyoxyethylene ether of 20.
  • the wetting agent is 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropenyl ether, the degree of polymerization m of the polyoxyethylene ether is 5, and the degree of polymerization p of the polyoxypropenyl ether is 4.
  • a cutting fluid for thinning large-size solar grade silicon wafers including the following components in parts by weight: Dispersant 37 parts wetting agent 14 parts Diethylene glycol monooctyl ether 12 parts pure water and the balance.
  • the dispersant is cyclohexanexanol polyoxyethylene ether with a degree of polymerization n of polyoxyethylene ether of 25.
  • the wetting agent is 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropenyl ether, the degree of polymerization m of the polyoxyethylene ether is 8, and the degree of polymerization p of the polyoxypropenyl ether is 3.
  • a cutting fluid for thinning large-size solar grade silicon wafers including the following components in parts by weight: Dispersant: 35 parts of wetting agent, 9.5 parts of triethylene glycol monohexyl ether, 11 parts of pure water, balance.
  • the dispersant is cyclohexanexanol polyoxyethylene ether with a degree of polymerization n of polyoxyethylene ether of 15.
  • the wetting agent is 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropenyl ether, the degree of polymerization m of the polyoxyethylene ether is 4, and the degree of polymerization p of the polyoxypropenyl ether is 6.
  • a cutting fluid for solar grade silicon wafers including the following components in parts by weight: Dispersant: 32.5 parts of triethylene glycol monohexyl ether, 10 parts of pure water, and the balance.
  • the dispersant is cyclohexanexanol polyoxyethylene ether with a degree of polymerization n of polyoxyethylene ether of 20.
  • a cutting fluid for solar grade silicon wafers including the following components in parts by weight: Dispersant 32.5 parts wetting agent 10.5 parts pure water balance.
  • the dispersant is cyclohexanexanol polyoxyethylene ether with a degree of polymerization n of polyoxyethylene ether of 20.
  • the wetting agent is 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropenyl ether, the degree of polymerization m of the polyoxyethylene ether is 5, and the degree of polymerization p of the polyoxypropenyl ether is 4.
  • a cutting fluid for solar grade silicon wafers including the following components in parts by weight: Dispersant: 32.5 parts of wetting agent, 10.5 parts of triethylene glycol monohexyl ether, 10 parts of pure water, balance.
  • the dispersant is block polyether
  • the wetting agent is 2,7-diyne-1,8-octanediol polyoxyethylene polyoxypropenyl ether
  • the degree of polymerization m of the polyoxyethylene ether is 5
  • the polyoxyethylene The degree of polymerization p of allyl ether is 4.
  • a cutting fluid for solar grade silicon wafers including the following components in parts by weight: Dispersant: 32.5 parts of wetting agent, 10.5 parts of triethylene glycol monohexyl ether, 10 parts of pure water, balance.
  • the dispersant is cyclohexanexanol polyoxyethylene ether with a degree of polymerization n of polyoxyethylene ether of 20.
  • the wetting agent is acetylene glycol polyoxyethylene ether.
  • the commercially available coolant Derby NS-1 type was used as comparative example 5, and the commercially available coolant Oak VS8229P type was used as comparative example 6.
  • Examples 1 to 6 of the present invention all have better static surface tension, wettability and defoaming performance, and have better performance in static surface tension, wettability and defoaming performance.
  • Solar-grade thin silicon wafers with large size have high requirements on wetting and foam suppression during the diamond wire cutting process. Improving these indicators can significantly improve the cutting torque and load.
  • Example 3 has the best surface tension and wettability effects. It has the best wetting and penetration effect and is suitable for cutting large-sized thin silicon wafers.
  • Figure 1 is a diagram showing the cutting state of the cutting fluid in Example 3 (Group B) and Comparative Example 5 (Group A) of the present invention as the cutting position changes under the same cutting process conditions.
  • Figure 1 shows that as the cutting position deepens, The cutting fluid of Example 3 of the present invention still maintains excellent defoaming performance, while the foaming phenomenon of the cutting fluid of Comparative Example 5 becomes more and more obvious as the cutting position deepens. It shows that Example 3 of the present invention has excellent foam control effect and strong defoaming and foam suppressing ability.
  • FIG. 2 is a diagram of the internal state of the filter bag after cutting the cutting fluids of Example 3 (Group B) and Comparative Example 5 (Group A) of the present invention under the same cutting process conditions.
  • the filter bag of Comparative Example 5 There is a large amount of silicon powder hanging inside the bag, but there is relatively less silicon powder inside the filter bag of Example 3, which shows that the cutting fluid of the present invention has strong dispersion ability and better dispersion effect on silicon powder.
  • the present invention uses a dispersant with a multi-branched structure, a wetting agent with a diacetylenic group, a stabilizer and pure water, combined with scientific and reasonable compatibility to form a cutting fluid, and utilizes the multi-branched structure to provide more precise cutting fluids.
  • Multiple active adsorption sites can better absorb and wrap silicon powder, prevent the agglomeration of silicon powder particles and increase electrostatic repulsion, making the cutting fluid more efficient in dispersing silicon powder, further reducing particle scratches on the silicon wafer and reducing the roughness of the silicon wafer.
  • the cutting fluid provided by the invention has excellent dispersion, dynamic wetting and static wetting, and defoaming properties. It can improve the cutting yield of thin-line large-size solar-grade silicon wafers and maintain the stability of the cutting process.

Abstract

本发明公开了一种薄片细线化大尺寸太阳能级硅片用切割液，属于光伏行业线切割加工技术领域。本发明的切割液由以下按重量份计的分散剂、润湿剂、稳定剂和纯水组成，分散剂25～40份、润湿剂8～15份、稳定剂8-12份、纯水余量；各组分的总份数为100份。其中，分散剂为具有多枝化结构的聚醚分散剂，能够提供更多的活性吸附位点，对硅粉的分散效率更高，同时该分散剂具有优异的润湿性能；所述润湿剂为结构对称的双炔基醇类聚醚，润湿性能较普通异构醇醚活性强，润湿效率更好。本发明通过分散剂与润湿剂的科学配合，使该切割液具有优异的分散、动态润湿和静态润湿、消泡等性能，能够有效提高硅片的良品率，保持切割过程的稳定性。

Description

一种薄片细线化大尺寸太阳能级硅片用切割液 技术领域
本发明涉及光伏行业线切割加工技术领域，具体涉及一种薄片细线化大尺寸太阳能级硅片用切割液。
背景技术
随着光伏产业的迅速发展，精益生产降低成本成为光伏企业在激烈的市场环境中生存的主要手段之一。近年来，大尺寸和薄片化成为光伏硅片降本的两大主要技术方向，其中硅片薄片化能有效减少单位瓦数硅料用量，是降本、减少硅料用量的重要手段。同时，金刚石线的细化能够有效提高硅片的产出率、降低硅材料的浪费，是降低成本的另一重要手段。在追求金刚石线细线化和硅片薄片化的进程中，同时提高了对切割过程的要求，高要求不仅仅体现在切割设备和切割工艺的变化上，更体现在切割液、金刚石线、主辊材质、纯水水质、粘接胶水、塑料板材等切割相关辅材的变化上。切割液作为切割过程中的主要化学辅助材料，参与硅片切割的全过程，因此切割液的性能和品质的好坏会直接影响硅片切割效率和硅片的良率结果。
目前，市场上使用的硅片切割液不能够很好地适应硅片大尺寸化、薄片化和金刚石线径细线化的切割过程，容易出现硅粉分散困难、切割线缝难润湿、切割至胶面时润湿性能下降导致的崩边、亮边等问题，使得硅片良品率很难达到切片企业的生产目标需求值。因此，切割液成为制约更低成本的金刚石线细线化、大尺寸硅片薄片化的硅片切割行业发展的瓶颈。
为了解决光伏行业内现有切割液存在的问题，十分有必要研发一种能够很 好地适应金刚石线细线化和太阳能级硅片薄片化需求的切割液。
发明内容
为了克服现有技术的不足，本发明的目的在于提供一种薄片细线化大尺寸太阳能级硅片用切割液，该切割液具有优异的分散、动态润湿和静态润湿、消泡等性能，能够有效提高硅片的良品率，保持切割过程的稳定性。
为解决上述问题，本发明所采用的技术方案如下：
一种薄片细线化大尺寸太阳能级硅片用切割液，其由以下按重量份计的各组分组成：分散剂25～40份、润湿剂8～15份、稳定剂8-12份、纯水余量；各组分的总份数为100份；
其中，所述分散剂为聚氧乙烯醚的聚合度n为10～25之间的整数的环己六醇聚氧乙烯醚中的至少一种，其结构式为：
所述润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚中的至少一种，其结构式为：
其中，聚氧乙烯醚的聚合度m为3～8之间的整数，聚氧丙烯基醚的聚合度p为0～6之间的整数。
作为本发明优选的实施方式，所述切割液由以下按重量份计的各组分组成：分散剂31～33份、润湿剂9～11份、稳定剂8-12份、纯水余量；各组分的总份数为100份。
作为本发明优选的实施方式，所述分散剂中聚氧乙烯醚的聚合度n为18～22。
作为本发明优选的实施方式，所述润湿剂中聚氧乙烯醚的聚合度m为4～6，聚氧丙烯基醚的聚合度n为3～5。
作为本发明优选的实施方式，所述稳定剂为乙二醇单戊醚、乙二醇单己醚、乙二醇单辛醚、二乙二醇单戊醚、二乙二醇单己醚、三乙二醇单己醚中的一种或多种组合。
作为本发明优选的实施方式，所述分散剂的制备方法如下：以环己六醇为起始醇，KOH为催化剂，通入环氧乙烷，保持0.1～0.4MPa压力进行反应，反应过程取样监测，测试分子量和聚合度达到要求后，制备得到分散剂。
作为本发明优选的实施方式，所述润湿剂的制备方法如下：以2,7-二炔-1,8-辛二醇为起始醇，KOH为催化剂，通入环氧乙烷，保持0.1～0.4MPa压力进行反应，反应过程取样监测，测试分子量和聚合度达到要求后，制备得到润湿剂。
相比现有技术，以上技术方案的有益效果在于：
1、本发明的切割液中所采用的分散剂为具有多枝化结构的聚醚化合物，多枝化结构能够提供更多的活性吸附位点，更好地吸附包裹硅粉嵌段聚醚，防止硅粉颗粒团聚和增大静电斥力，使切割液对硅粉的分散效率更高，进一步降低颗粒刮伤硅片和减少硅片粗糙度，更能适应硅粉浓度大幅增加的大尺寸、细线化、薄片化切割环境，硅粉分散效果更好。
2、同时本发明的分散剂本身具有非常优异的润滑性能，可以有效降低钢线的磨损，能更好的节约钢线的单刀使用量和降低切割过程的主辊扭矩，使切割 后的硅片TTV值和线痕值均能维持在比较优异的低水平值。
3、本发明的润湿剂为结构对称的双挂型双炔基醇类聚醚化合物，双炔基可以提供更强的亲油基共轭碳链，同时碳链两端的聚氧乙烯聚氧丙烯嵌段结构能够提供亲水基结构，使其润湿性能较普通异构醇醚活性强，润湿效率更好，可以提供优异的动态和静态润湿性能，以保证金刚线表面润湿而减少金刚线断线率。
因此，本发明所提供的切割液具有优异的分散、动态润湿和静态润湿、消泡性能，能够提升薄片细线化大尺寸太阳能级硅片的切割良率，有效解决了硅片大尺寸化、薄片化和金刚石线径细线化切割过程中遇到的硅粉分散困难、切割线缝难润湿、切割至胶面时润湿性能下降导致的崩边、亮边等问题，从而能够有效提高硅片的良品率，保持切割过程的稳定性。
附图说明
图1为本发明实施例3与对比例5的切割液在相同切割工艺条件下随着切割位置变化的切割状态图；
图2为本发明实施例3与对比例5的切割液在相同切割工艺条件下切割后的滤袋内部状态图；
图3为本发明实施例3与对比例5的切割液在相同切割工艺条件下切割所得的硅片状态图；
以上附图中，A组为对比例5的切割液状态图，B组为实施例3的切割液状态图。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步详细说明。
一种薄片细线化大尺寸太阳能级硅片用切割液，其由以下按重量份计的各组分组成：分散剂25～40份、润湿剂8～15份、稳定剂8-12份、纯水余量；各组分的总份数为100份；
其中，分散剂为聚氧乙烯醚的聚合度n为10～25之间的整数的环己六醇聚氧乙烯醚中的至少一种，其结构式为：
润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚中的至少一种，其结构式为：
其中，聚氧乙烯醚的聚合度m为3～8之间的整数，聚氧丙烯基醚的聚合度p为0～6之间的整数。
稳定剂为乙二醇单戊醚、乙二醇单己醚、乙二醇单辛醚、二乙二醇单戊醚、二乙二醇单己醚、三乙二醇单己醚中的一种或多种组合。
实施例1：
一种薄片细线化大尺寸太阳能级硅片用切割液，包括以下按重量份计的各组分：
分散剂 30份
润湿剂 10份
乙二醇单己醚 9份
纯水 余量。
其中，分散剂为聚氧乙烯醚的聚合度n为12的环己六醇聚氧乙烯醚。润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚，聚氧乙烯醚的聚合度m为7，聚氧丙烯基醚的聚合度p为4。
实施例2：
一种薄片细线化大尺寸太阳能级硅片用切割液，包括以下按重量份计的各组分：
分散剂 39份
润湿剂 14份
乙二醇单辛醚 8.5份
纯水 余量。
其中，分散剂为聚氧乙烯醚的聚合度n为16的环己六醇聚氧乙烯醚。润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚，聚氧乙烯醚的聚合度m为6，聚氧丙烯基醚的聚合度p为5。
实施例3：
一种薄片细线化大尺寸太阳能级硅片用切割液，包括以下按重量份计的各组分：
分散剂 32.5份
润湿剂 10.5份
三乙二醇单己醚 10份
纯水 余量。
其中，分散剂为聚氧乙烯醚的聚合度n为20的环己六醇聚氧乙烯醚。润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚，聚氧乙烯醚的聚合度m为5，聚氧丙烯基醚的聚合度p为4。
实施例4：
一种薄片细线化大尺寸太阳能级硅片用切割液，包括以下按重量份计的各组分：
分散剂 33份
润湿剂 8份
二乙二醇单己醚 10.5份
纯水 余量。
其中，分散剂为聚氧乙烯醚的聚合度n为20的环己六醇聚氧乙烯醚。润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚，聚氧乙烯醚的聚合度m为5，聚氧丙烯基醚的聚合度p为4。
实施例5：
一种薄片细线化大尺寸太阳能级硅片用切割液，包括以下按重量份计的各组分：
分散剂 37份
润湿剂 14份
二乙二醇单辛醚 12份
纯水 余量。
其中，分散剂为聚氧乙烯醚的聚合度n为25的环己六醇聚氧乙烯醚。润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚，聚氧乙烯醚的聚合度m为8，聚氧丙烯基醚的聚合度p为3。
实施例6：
一种薄片细线化大尺寸太阳能级硅片用切割液，包括以下按重量份计的各组分：
分散剂 35份
润湿剂 9.5份
三乙二醇单己醚 11份
纯水 余量。
其中，分散剂为聚氧乙烯醚的聚合度n为15的环己六醇聚氧乙烯醚。润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚，聚氧乙烯醚的聚合度m为4，聚氧丙烯基醚的聚合度p为6。
对比例1：
一种太阳能级硅片用切割液，包括以下按重量份计的各组分：
分散剂 32.5份
三乙二醇单己醚 10份
纯水 余量。
其中，分散剂为聚氧乙烯醚的聚合度n为20的环己六醇聚氧乙烯醚。
对比例2：
一种太阳能级硅片用切割液，包括以下按重量份计的各组分：
润湿剂 10.5份
三乙二醇单己醚 10份
纯水 余量。
其中，润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚，聚氧乙烯醚的聚合度m为5，聚氧丙烯基醚的聚合度p为4。
对比例3：
一种太阳能级硅片用切割液，包括以下按重量份计的各组分：
分散剂 32.5份
润湿剂 10.5份
纯水 余量。
其中，分散剂为聚氧乙烯醚的聚合度n为20的环己六醇聚氧乙烯醚。润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚，聚氧乙烯醚的聚合度m为5，聚氧丙烯基醚的聚合度p为4。
对比例4：
一种太阳能级硅片用切割液，包括以下按重量份计的各组分：
分散剂 32.5份
润湿剂 10.5份
三乙二醇单己醚 10份
纯水 余量。
其中，分散剂为嵌段聚醚，润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚，聚氧乙烯醚的聚合度m为5，聚氧丙烯基醚的聚合度p为4。
对比例5：
一种太阳能级硅片用切割液，包括以下按重量份计的各组分：
分散剂 32.5份
润湿剂 10.5份
三乙二醇单己醚 10份
纯水 余量。
其中，分散剂为聚氧乙烯醚的聚合度n为20的环己六醇聚氧乙烯醚。润湿剂为炔二醇聚氧乙烯基醚。
对比例5～6：
以市售冷却液德比NS-1型为对比例5、以市售冷却液奥克VS8229P型作为对比例6。
一、切割液性能对比实验：
对实施例1～6和对比例1～6进行切割液性能对比实验，分别测定静态表面张力、浸润性、消泡性能和粘度等数据，结果如表1所示。
表1切割液性能对比实验结果

由表1可知，本发明的实施例1～6较之于对比例1～6，从测试指标数据可以看出，本发明实施例均具有较好静态表面张力、浸润性和消泡性能，大尺寸的太阳能级薄硅片在金刚线切割过程中，对润湿和抑泡的要求很高，这些指标提升可以显著改善切割的扭矩和负荷，实施例3的表面张力和浸润性效果最优，其润湿渗透的效果最佳，适合于大尺寸薄硅片的切割。
二、切割性能对比实验
将实施例1～6和对比例1～6所得的切割液在同一台切割机器、同样的切割工艺条件下进行切割，分别测定或统计切割刀数、断线率、加切率、线痕比率、TTV均值以及线痕均值，结果如表2所示。
表2切割性能对比实验结果
由表2可知，本发明的实施例1～6的切割液在相同的切割工艺条件下较之于对比例1～6的切割液均具有较好的切割性能数据，其中又以实施例3的效果最佳。由于本发明实施例1～6润湿效果好，分散效果强，消泡抑泡效果好，故对应的硅片切割效果较优，又以润湿效果最好的实施例3的数据结果最优。
图1为本发明实施例3(B组)与对比例5(A组)的切割液在相同切割工艺条件下随着切割位置变化的切割状态图，图1显示，随着切割位置的加深，本发明实施例3的切割液依然保持着优异的消泡性能，而对比例5的切割液随着切割位置的加深起泡现象越来越明显。说明本发明实施例3的泡沫控制效果优，消泡抑泡能力强。
图2为本发明实施例3(B组)与对比例5(A组)的切割液在相同切割工艺条件下切割后的滤袋内部状态图，由图2可看出，对比例5的滤袋内部挂有大量的硅粉，而实施例3的滤袋内部的硅粉相对较少，由此说明本发明的切割液对硅粉的分散能力强、分散效果更为优异。
图3为本发明实施例3(B组)与对比例5(A组)的切割液在相同切割工艺条件下切割所得的硅片照片，由图3可以看出，对比例5所得的硅片上线痕较多，并残留有较多硅粉，实施例3所得的硅片线痕少，表面光滑、粗糙度小。说明本发明实施例3对硅粉的分散能力强，泡沫控制效果优，润湿效果佳，硅片表面的切割质量好。
综上所述，本发明通过采用具有多枝化结构的分散剂和带有双炔基的润湿剂与稳定剂和纯水并结合科学合理的配伍组成切割液，利用多枝化结构提供更多的活性吸附位点，更好地吸附包裹硅粉，防止硅粉颗粒团聚和增大静电斥力，使切割液对硅粉的分散效率更高，进一步降低颗粒刮伤硅片和减少硅片粗糙度，硅粉分散效果更好；利用双炔基提供更强的亲油基共轭碳链、碳链两端的聚氧乙烯聚氧丙烯嵌段结构提供亲水基结构，使其润湿效率更好，可以提供优异的动态和静态润湿性能，以保证金刚线表面润湿而减少金刚线断线率。因此，本 发明所提供的切割液具有优异的分散、动态润湿和静态润湿、消泡性能，能够提升薄片细线化大尺寸太阳能级硅片的切割良率，保持切割过程的稳定性。
上述实施方式仅为本发明的优选实施方式，不能以此来限定本发明保护的范围，本领域的技术人员在本发明的基础上所做的任何非实质性的变化及替换均属于本发明所要求保护的范围。

Claims (5)

  1. 一种薄片细线化大尺寸太阳能级硅片用切割液，其特征在于：由以下按重量份计的各组分组成：分散剂25～40份、润湿剂8～15份、稳定剂8-12份、纯水余量；各组分的总份数为100份；
    其中，所述分散剂为聚氧乙烯醚的聚合度n为10～25之间的整数的环己六醇聚氧乙烯醚中的至少一种，其结构式为：
    所述润湿剂为2,7-二炔-1,8-辛二醇聚氧乙烯聚氧丙烯基醚中的至少一种，其结构式为：
    其中，聚氧乙烯醚的聚合度m为3～8之间的整数，聚氧丙烯基醚的聚合度p为0～6之间的整数。
  2. 根据权利要求1所述的薄片细线化大尺寸太阳能级硅片用切割液，其特征在于：所述切割液由以下按重量份计的各组分组成：分散剂31～33份、润湿剂9～11份、稳定剂8-12份、纯水余量；各组分的总份数为100份。
  3. 根据权利要求1所述的薄片细线化大尺寸太阳能级硅片用切割液，其特征在于：所述分散剂中聚氧乙烯醚的聚合度n为18～22。
  4. 根据权利要求1所述的薄片细线化大尺寸太阳能级硅片用切割液，其特征在于：所述润湿剂中聚氧乙烯醚的聚合度m为4～6，聚氧丙烯基醚的聚合度n 为3～5。
  5. 根据权利要求1所述的薄片细线化大尺寸太阳能级硅片用切割液，其特征在于：所述稳定剂为乙二醇单戊醚、乙二醇单己醚、乙二醇单辛醚、二乙二醇单戊醚、二乙二醇单己醚、三乙二醇单己醚中的一种或多种组合。
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