WO2023168640A1 - 一种发光器件、显示器及发光器件的制备方法 - Google Patents

一种发光器件、显示器及发光器件的制备方法 Download PDF

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Publication number
WO2023168640A1
WO2023168640A1 PCT/CN2022/080043 CN2022080043W WO2023168640A1 WO 2023168640 A1 WO2023168640 A1 WO 2023168640A1 CN 2022080043 W CN2022080043 W CN 2022080043W WO 2023168640 A1 WO2023168640 A1 WO 2023168640A1
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WO
WIPO (PCT)
Prior art keywords
thermally conductive
substrate
light
hole
metal layer
Prior art date
Application number
PCT/CN2022/080043
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English (en)
French (fr)
Inventor
马刚
Original Assignee
厦门市芯颖显示科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 厦门市芯颖显示科技有限公司 filed Critical 厦门市芯颖显示科技有限公司
Priority to PCT/CN2022/080043 priority Critical patent/WO2023168640A1/zh
Priority to CN202280000428.9A priority patent/CN117043973A/zh
Publication of WO2023168640A1 publication Critical patent/WO2023168640A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

Definitions

  • the present invention relates to the technical field of semiconductor devices, and in particular to a light-emitting device, a display and a method for preparing the light-emitting device.
  • LED display screens have performance advantages such as rich colors, easy stitching, good uniformity, and low power consumption. They are widely used in conference venues, military command, security displays, commercial displays and other fields. There are several LED chips installed in the LED display screen. Since several LED chips are installed in a closed space formed by the circuit board and the display panel, the heat generated by the LED chips when working is difficult to dissipate and accumulates, making the LED chips prone to high temperatures and Damage will affect the brightness and service life of the display.
  • the heat generated when the LED chip in the display screen is working is generally conducted through the circuit board and naturally dissipated through the circuit board or the display case.
  • the thermal conductivity of existing circuit boards is very low and cannot effectively conduct heat generated by LED chips, seriously affecting the heat dissipation effect of the display screen.
  • the object of the present invention is to provide a light-emitting device, a display and a method for manufacturing the light-emitting device.
  • the present invention provides a light-emitting device, including:
  • the substrate includes a first surface and a second surface arranged oppositely, and the substrate is provided with a through hole penetrating the substrate;
  • the light-emitting element is arranged on the first surface of the substrate and is arranged corresponding to the through hole;
  • the thermally conductive structure fills the through hole, and one end of the thermally conductive structure extends from the through hole to closely fit the light-emitting element, and the other end extends to be flush with or cover the second surface of the substrate.
  • the thermal conductive structure is formed as a thermal conductive pillar filled in the through hole.
  • One end of the thermal conductive pillar extends from the through hole to closely fit the light-emitting element, and the other end is flush with the second surface of the substrate.
  • the heat dissipation structure is attached to the second surface of the substrate and closely attached to the thermal conductive pillar.
  • the material forming the thermally conductive pillar includes one of thermally conductive metal or thermally conductive silicone grease.
  • the thermally conductive structure includes:
  • Thermal conductive pillars are filled in the through holes.
  • Thermal conductive metal layer covers the second surface of the substrate.
  • the thermally conductive metal layer forms a concave-convex structure on a side away from the substrate.
  • the thermally conductive structure includes:
  • a first thermally conductive metal layer covering the inner wall of the through hole and the second surface of the substrate.
  • the second thermally conductive metal layer covers the first thermally conductive metal layer and fills the through hole.
  • the thermally conductive structure includes:
  • the first thermally conductive metal layer covers the inner wall of the through hole and the second surface of the substrate;
  • the second thermally conductive metal layer is located above the first thermally conductive metal layer and forms a hollow structure with the second thermally conductive metal layer.
  • the second thermally conductive metal layer forms a continuous structure with the first thermally conductive metal layer at both ends of the first thermally conductive metal layer;
  • Refrigerant medium filling hollow structures and through holes.
  • the second thermally conductive metal layer of the thermally conductive structure forms a concave and convex structure on a side away from the substrate.
  • the light-emitting element includes an electrode structure and a light-emitting structure
  • the electrode structure is bonded to the first surface of the substrate
  • the light-emitting structure corresponds to the through hole on the substrate
  • one end of the thermal conductive structure extends to the through hole to be in close contact with the light emitting structure.
  • thermally conductive structure is formed of thermally conductive metal material
  • an insulating layer is further provided between the thermally conductive structure and the electrode structure.
  • the invention also provides a method for preparing a light-emitting device, which includes the following steps:
  • the substrate includes a first surface and a second surface arranged oppositely, and a through hole penetrating the substrate is formed in the substrate;
  • the thermal conductive material is filled in the through hole to form a thermal conductive structure, and one end of the thermal conductive structure extends from the through hole to be connected to the light emitting element, and the other end extends to be flush with or cover the second surface of the substrate.
  • filling the through holes with thermally conductive material to form a thermally conductive structure also includes:
  • thermal conductive pillar in the through hole Use evaporation or sputtering to form a thermal conductive pillar in the through hole, and make one end of the thermal conductive pillar form a close fit with the light-emitting device, and the other end extends to be flush with the second surface of the substrate; or form a thermal conductive pillar in the through hole pillar, so that one end of the thermal conductive pillar forms a close fit with the light-emitting device, and the other end extends to be flush with the second surface of the substrate.
  • the heat dissipation structure is closely attached to the second surface of the substrate and the thermal conductive pillar flush with the second surface of the substrate.
  • thermally conductive material to form a thermally conductive structure, including:
  • the thermally conductive metal layer is etched to form a concave-convex structure on the side away from the substrate.
  • thermally conductive material to form a thermally conductive structure, including:
  • a second thermally conductive metal layer is formed on the surface of the first thermally conductive metal layer by chemical evaporation, and the second thermally conductive metal layer fills the through hole.
  • thermally conductive material to form a thermally conductive structure, including:
  • the second thermally conductive metal layer of the thermally conductive structure is formed into a concave and convex structure on a side away from the substrate.
  • the present invention also provides a display, including any of the above-mentioned light-emitting devices.
  • the light-emitting device, display and light-emitting device preparation method of the present invention at least have the following beneficial effects:
  • the light-emitting device includes a substrate, which includes a first surface and a second surface arranged oppositely.
  • the substrate is provided with a through hole, and the light-emitting element is arranged on the first surface of the substrate and corresponds to the through hole on the substrate.
  • the thermally conductive structure fills the through hole in the substrate, and one end of the thermally conductive structure extends from the through hole to closely fit the light-emitting element, and the other end extends to be flush with the other surface of the substrate or cover the second surface of the substrate.
  • the thermal conductive structure uses materials with high thermal conductivity, which can directly transfer the heat generated by the light-emitting elements to the heat dissipation structure, shorten the heat dissipation path, and reduce the heat transferred to the substrate itself.
  • the above-mentioned thermal conductive structure is in direct contact with the light-emitting element, thereby achieving the largest contact area between the thermal conductive structure and the light-emitting element, and increasing the thermal conductive area. This achieves efficient heat dissipation of the light-emitting device, reduces the temperature of the light-emitting element, and increases the lifespan of the light-emitting element and the light-emitting device.
  • the thermal conductive structure of the present application can have a variety of configurations, and the thermal conductive structure with different structures can be configured according to the type of the substrate.
  • the thermally conductive materials that form the thermally conductive structure can also be selected according to actual conditions, thereby increasing the scope of application of the thermally conductive structure, making it suitable for different substrate types of light-emitting devices, and improving the heat dissipation effect and life of various light-emitting devices. .
  • the display and light-emitting device preparation methods described in the present invention all include the above-mentioned light-emitting device preparation method, and can also achieve the above technical effects.
  • Figure 1 is a schematic structural diagram of the light-emitting device described in Embodiment 1 of the present invention.
  • Figure 2 is a schematic structural diagram of the light-emitting device described in Embodiment 2 of the present invention.
  • Figure 3 is a schematic structural diagram of a light-emitting device according to Embodiment 3 of the present invention.
  • Figure 4 is a schematic structural diagram of a light-emitting device according to Embodiment 4 of the present invention.
  • Figure 5 is a schematic structural diagram of the formation of through holes on the substrate in Embodiment 5 of the present invention.
  • Figure 6 is a schematic structural diagram of the formation of through holes on the substrate in Embodiment 6 of the present invention.
  • Figure 7a is a schematic structural diagram of bonding a light-emitting element to the first surface of a substrate in Embodiment 7 of the present invention.
  • Figure 7b is a schematic structural diagram of forming the through hole into a trapezoidal hole in Embodiment 7 of the present invention.
  • Figure 7c is a schematic structural diagram of forming a first thermally conductive metal layer on the second surface of the substrate and the inner wall of the through hole in Embodiment 7 of the present invention
  • Figure 7d is a schematic structural diagram of forming a second thermally conductive metal layer on the first thermally conductive metal layer in Embodiment 7 of the present invention.
  • Figure 8a is a schematic structural diagram of forming an insulating layer on the inner wall of the electrode structure of the light-emitting element corresponding to the through hole in Embodiment 8 of the present invention
  • Figure 8b is a schematic structural diagram of forming a first thermally conductive metal layer on the second surface of the substrate and the inner wall of the through hole in Embodiment 8 of the present invention
  • Figure 8c is a schematic structural diagram of a graphic template provided in Embodiment 8 of the present invention.
  • Figure 8d is a schematic structural diagram of forming a second thermally conductive metal layer on the surface of the graphic template in Embodiment 8 of the present invention.
  • Figure 8e is a schematic structural diagram of bonding the structures formed in Figures 8b and 8d to form a hollow structure between the first thermally conductive metal layer and the second thermally conductive metal layer in Embodiment 8 of the present invention.
  • diagrams provided in the embodiments of the present invention are only schematically illustrating the basic concept of the present invention.
  • the diagrams only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation. , the shape, quantity and proportion of each component can be changed at will during its actual implementation, and its component layout may also be more complex.
  • the structures, proportions, sizes, etc. shown in the drawings of the specification are only used to coordinate with the content disclosed in the specification and are for the understanding and reading of people familiar with this technology.
  • This embodiment provides a light-emitting device, which includes a substrate, a light-emitting element and a thermal conductive structure.
  • the substrate has a first surface and a second surface that are oppositely arranged, and the substrate is provided with a through hole penetrating the substrate, and the through hole connects the first surface and the second surface of the substrate.
  • the light-emitting element is disposed on the first surface of the substrate and is disposed corresponding to the through hole.
  • One end of the thermally conductive structure extends from the through hole to be in close contact with the light-emitting element, and the other end extends to be flush with or cover the second surface of the substrate.
  • the light-emitting element located on the first surface of the substrate can conduct the heat generated during operation of the light-emitting element to the second surface of the substrate through the thermal conductive structure, thereby improving the luminance and service life of the light-emitting device.
  • the substrate 100 includes a driving circuit, which is used to electrically connect the light-emitting element 200 and control the light-emitting element 200 to turn on and off.
  • the substrate 100 may be one of a PCB substrate, a TFT substrate, and a flexible PI substrate.
  • the substrate 100 is explained by taking a TFT (Thin Film Transistor, thin film transistor) substrate as an example.
  • the light-emitting element 200 serves as a light source of the light-emitting device, is disposed on the first surface 110 of the substrate 100, and corresponds to the through hole 101 on the substrate 100.
  • the light-emitting element 200 includes a light-emitting structure 202 and an electrode structure 201.
  • the two electrode structures 202 of the light-emitting element 200 are bonded to the first surface 110 of the substrate 100.
  • the light-emitting structure 202 of the light-emitting element 200 corresponds to the first surface 110 of the substrate 100.
  • the through hole 101 can be used as the bottom wall of the through hole 101 for subsequent direct growth of thermally conductive material.
  • the light emitting element 200 is an LED chip or a micro LED chip, such as a micro red LED chip, a micro blue LED chip or a micro green LED chip. It should be noted that in the present invention, the number of the light-emitting elements 200 is several. This embodiment only uses a single light-emitting element 200 on the substrate 100 as an example, which cannot be regarded as a limitation of the present invention.
  • the thermal conductive structure 300 fills the through hole 101, and one end of the thermal conductive structure 300 extends from the through hole 101 to closely fit the light emitting structure 202 of the light emitting element 200, and the other end extends from the through hole 101 to be flush with the second surface 120 of the substrate 100 .
  • the thermally conductive structures 300 are formed on the surface of the light-emitting structure 202 corresponding to the light-emitting element 200 in the through hole 101.
  • the thermally conductive structure 300 can be directly grown on the surface of the light-emitting structure 202.
  • the thermally conductive structure 300 includes a first part filled in the through hole 101 and a second part covering the second surface 120 of the substrate 100.
  • the first part is formed as a thermally conductive pillar 310
  • the second part is formed as a thermally conductive metal layer 320.
  • the first part and the second part are formed into an integrated structure, and their materials are both thermally conductive metals, such as titanium or copper.
  • An insulating layer 500 is also provided between the thermally conductive pillar 310 and the electrode structure 201 of the light-emitting element 200 to electrically isolate the electrode structure 201 from the thermally conductive metal.
  • a heat dissipation structure 400 is also provided on the side of the thermally conductive metal layer 320 away from the substrate 100.
  • the heat dissipation structure 400 is formed into a concave and convex structure, which can increase the contact area between the heat sink and the natural air, and is conducive to improving the efficiency of the light-emitting device. Heat dissipation efficiency.
  • the heat dissipation structure can also be an independent heat sink, which can be closely coupled with the thermal conductive structure for heat dissipation.
  • the heat dissipation structure 400 can be a fin-type heat sink as shown in FIG. 2 .
  • the fin-type heat sink includes a heat dissipation substrate 401 and a heat dissipation fin 402 on a side away from the substrate 100 .
  • the heat dissipation substrate 401 and the thermally conductive metal in FIG. 1 The layer 320 is closely adhered to form a tight connection between the heat dissipation substrate 401 and the thermal conductive structure 300 in FIG. 1, and the heat is conducted through the heat dissipation substrate 401 to the heat dissipation fins 402 for heat dissipation.
  • the thermally conductive pillars 310 and the thermally conductive metal layer 320 are grown by vacuum evaporation or chemical evaporation. This growth method can make the thermally conductive pillars 310 and the light-emitting elements 200 grow together to achieve seamless connection and avoid light emission. The component 200 and the thermal conductive pillar 310 cannot form effective contact, resulting in a problem of reduced thermal conductive area.
  • This embodiment provides a light-emitting device, which also includes a substrate, a light-emitting element and a thermal conductive structure.
  • the substrate has a first surface and a second surface that are oppositely arranged, and the substrate is provided with a through hole penetrating the substrate, and the through hole connects the first surface and the second surface of the substrate.
  • the light-emitting element is disposed on the first surface of the substrate and is disposed corresponding to the through hole.
  • One end of the thermal conductive structure extends from the through hole to closely fit the light-emitting element, and the other end extends to be flush with the second surface of the substrate.
  • the thermal conductive structure 300 is a thermal conductive pillar 310 formed in the through hole 101 , and the material of the thermal conductive pillar 310 is thermal conductive silicone grease. Furthermore, a heat dissipation structure 400 is formed on the second surface 120 of the substrate 100 , and the heat dissipation structure 400 is bonded to the second surface 120 of the substrate 100 and the thermal conductive silicone grease that is flush with the second surface 120 of the substrate 100 .
  • the heat dissipation structure 400 is a fin-type heat sink.
  • the heat sink includes a heat dissipation substrate 401 and a heat dissipation fin 402 on a side away from the substrate 100.
  • the heat dissipation fin 402 can further dissipate the heat generated by the light-emitting element 200. , which is beneficial to improving the heat dissipation efficiency of the light-emitting element 200.
  • This embodiment provides a light-emitting device, which also includes a substrate, a light-emitting element and a thermal conductive structure.
  • the substrate has a first surface and a second surface that are oppositely arranged, and the substrate is provided with a through hole penetrating the substrate, and the through hole connects the first surface and the second surface of the substrate.
  • the light-emitting element is disposed on the first surface of the substrate and is disposed corresponding to the through hole.
  • One end of the thermally conductive structure extends from the through hole to closely fit the light-emitting element, and the other end extends to cover the second surface of the substrate.
  • the substrate 100 is a flexible PI substrate
  • the thermally conductive structure 300 includes a first thermally conductive metal layer 321 and a second thermally conductive metal layer 322, wherein the first thermally conductive metal layer 321 covers the second thermally conductive metal layer 321 of the substrate 100.
  • the surface 120 and the inner wall of the through hole 101, and the first thermally conductive metal layer 321 is formed by evaporation or sputtering, so that the first thermally conductive metal layer 321 and the bottom of the light emitting element 200 exposed in the through hole 101 form a tight connection.
  • the thickness of the first thermally conductive metal layer 321 is less than 1 ⁇ m.
  • an insulating layer 500 is disposed between the first thermally conductive metal layer 321 and the electrode structure 201 of the light-emitting element 200 to electrically isolate the electrode structure 201 from the thermally conductive metal.
  • the second thermally conductive metal layer 322 covers the first thermally conductive metal layer 321 and fills the through hole 101, and the second thermally conductive metal layer 322 forms a heat dissipation structure 400 on the side away from the substrate 100.
  • the heat dissipation structure 400 is a concave and convex structure, which can increase The area of the second thermally conductive metal layer 322 in contact with the outside world increases the thermal conductivity or heat dissipation effect.
  • This embodiment provides a light-emitting device, which also includes a substrate, a light-emitting element and a thermal conductive structure.
  • the substrate has a first surface and a second surface that are oppositely arranged, and the substrate is provided with a through hole penetrating the substrate, and the through hole connects the first surface and the second surface of the substrate.
  • the light-emitting element is disposed on the first surface of the substrate and is disposed corresponding to the through hole.
  • One end of the thermally conductive structure extends from the through hole to closely fit the light-emitting element, and the other end extends to cover the second surface of the substrate.
  • the thermally conductive structure 300 includes a first thermally conductive metal layer 321 , a second thermally conductive metal layer 322 and a refrigerant medium 324 , wherein the first thermally conductive metal layer 321 covers the inner wall of the through hole 101 and the third surface of the substrate 100 .
  • the second thermally conductive metal layer 322 is located above the first thermally conductive metal layer 321, and forms a hollow structure 323 with the second thermally conductive metal layer 322.
  • the second thermally conductive metal layer 322 is connected to the second thermally conductive metal layer 322 at both ends of the first thermally conductive metal layer 322.
  • a thermally conductive metal layer 321 forms a continuous structure.
  • the refrigerant medium 324 fills the hollow structure 323 and the through hole 101 .
  • an insulating layer 500 is also disposed between the first thermally conductive metal layer 321 and the electrode structure 201 of the light-emitting element 200 to electrically isolate the electrode structure 201 from the thermally conductive metal.
  • the refrigerant medium 324 may be one of water, oil, or air.
  • the refrigerant medium 324 is oil, and the heated molecular motion of the oil achieves faster thermal conductivity and improves heat dissipation efficiency.
  • This embodiment provides a method for preparing a light-emitting device, including the following steps:
  • S101 Provide a substrate, the substrate includes a first surface and a second surface arranged oppositely, and a through hole penetrating the substrate is formed on the substrate;
  • a substrate 100 is provided.
  • the substrate 100 has a first surface 110 and a second surface 120 arranged oppositely.
  • a through hole 101 is formed on the substrate 100 by a laser.
  • a photoresist mask 600 may be formed above the substrate 100 , an opening 601 may be formed on the photoresist mask 600 , and the substrate 100 may be etched along the opening 601 to form a film on the substrate 100 .
  • Through hole 101 as shown in Figure 6.
  • S102 Transfer the light-emitting element to the first surface of the substrate so that the light-emitting element corresponds to the position of the through hole;
  • the light-emitting element 200 is transferred and bonded to the first surface 110 of the substrate 100 so that the light-emitting element 200 corresponds to the position of the through hole 101 , and the light-emitting structure 202 of the light-emitting element 200 covers the through hole 101 .
  • S103 Fill the through hole with a thermally conductive material to form a thermally conductive structure, and make one end of the thermally conductive structure extend from the through hole to be connected to the light-emitting element, and the other end extend and cover the second surface of the substrate.
  • a thermally conductive metal material is evaporated in the through hole 101 on the second surface 120 of the substrate 100 so that the thermally conductive metal material layer fills the through hole 101 to form a thermally conductive pillar 310 , and the thermally conductive metal material is continued to be chemically evaporated.
  • forming a thermally conductive metal layer 320 on the second surface 120 of the substrate 100, and the thermally conductive pillar 310 and the thermally conductive metal layer 320 form an integrated structure.
  • the material formed in the through hole 101 in this embodiment is a thermally conductive metal material, in order to electrically insulate the thermally conductive metal material from the electrode structure 201 of the light-emitting element 200, before forming the thermally conductive metal layer 320 in this embodiment, An insulating layer 500 is formed between the electrode structure 201 of the light-emitting element 200 and the thermally conductive metal material.
  • a thin insulating layer can be deposited through the through hole 101, and the inner wall of the through hole 101 and the through hole 101 can be etched to remove An insulating layer is deposited on the surface of the light-emitting structure 202 to obtain the insulating layer 500 formed on the surface of the electrode structure 201 through the through hole 101 in FIG. 1 .
  • the thermally conductive metal layer 320 is etched to form a heat dissipation structure 400 on the side of the thermally conductive metal layer 320 away from the substrate 100.
  • the heat dissipation structure 400 is formed into a concave and convex structure to increase the contact area of the thermally conductive metal layer 320 with the outside world and increase the heat dissipation effect.
  • This embodiment provides a method for preparing a light-emitting device.
  • the similarities with Embodiment 5 will not be repeated here. The differences are:
  • S103 Fill the through hole with thermally conductive material to form a thermally conductive structure, and extend one end of the thermally conductive structure from the through hole to be connected to the light-emitting element, and extend the other end to be flush with the second surface of the substrate.
  • the thermally conductive silicone grease is formed in the through hole 101 by spin coating or spraying. Due to the insulating properties of the thermally conductive silicone grease, there is no need to first form the thermally conductive silicone grease before filling the through hole 101 .
  • An insulating layer 500 simplifies the preparation steps and saves the manufacturing cost of the light-emitting device.
  • the method further includes: providing a fin-type heat sink.
  • the fin-type heat sink includes a heat dissipation substrate 401 and a heat dissipation fin 402 disposed on one side of the heat dissipation substrate, connecting the second surface 120 of the substrate 100 with The surface of the heat dissipation substrate 401 is in close contact with each other, so that the thermal conductive silicone grease is in close contact with the heat dissipation substrate 401.
  • the heat generated by the light emitting element 200 is conducted to the heat dissipation substrate 401 through the thermal conductive silicone grease, and the heat dissipation effect is further increased through the heat dissipation fins 402.
  • This embodiment provides a method for preparing a light-emitting device.
  • the similarities with Embodiment 5 will not be repeated here. The differences are:
  • S101 Provide a substrate, the substrate includes a first surface and a second surface arranged oppositely, and a through hole penetrating the substrate is formed on the substrate;
  • a substrate 100 is provided.
  • the substrate 100 has a first surface 110 and a second surface 120 arranged oppositely.
  • the substrate 100 in this embodiment is a flexible PI substrate.
  • a photoresist mask 600 is formed above the flexible PI substrate, an opening 601 is formed on the photoresist mask 600, and the substrate 100 is etched along the opening 601.
  • a through hole 101 is formed on the substrate 100 .
  • S103 Fill the through hole with a thermally conductive material to form a thermally conductive structure, and make one end of the thermally conductive structure extend from the through hole to be connected to the light-emitting element, and the other end extend and cover the second surface of the substrate.
  • an insulating layer is deposited through the through hole 101 , and the insulating layer located on the inner wall of the through hole 101 and deposited on the surface of the light emitting structure 202 through the through hole 101 is removed by etching to obtain the insulating layer deposited on the surface of the electrode structure 201 through the through hole 101 . Insulating layer 500.
  • this embodiment also includes preprocessing the through hole 101 and the insulating layer 500 located on the surface of the electrode structure 201 after forming the insulating layer 500, so that The through hole 101 and the insulating layer 500 located on the surface of the electrode structure 201 are formed into trapezoidal holes.
  • the trapezoidal hole can be formed by etching the inner wall of the through hole 101 and the insulating layer 500 located on the surface of the electrode structure 201 at the same time.
  • a first thermally conductive metal layer 321 is formed on the second surface 120 of the substrate 100 and the inner wall of the trapezoidal hole by sputtering or evaporation.
  • a second thermally conductive metal layer 322 is formed on the surface of the first thermally conductive metal layer 321 by chemical evaporation.
  • the second thermally conductive metal layer 322 is etched to form a heat dissipation structure 400 on a side away from the second surface 120 of the substrate 100 .
  • the heat dissipation structure 400 is formed into a concave and convex structure.
  • the concave and convex structure can Increase the contact area with the outside world and increase the heat dissipation effect.
  • This embodiment provides a method for preparing a light-emitting device.
  • the similarities with Embodiment 5 will not be repeated here. The differences are:
  • S103 Fill the through hole with a thermally conductive material to form a thermally conductive structure, and make one end of the thermally conductive structure extend from the through hole to be connected to the light-emitting element, and the other end extend and cover the second surface of the substrate.
  • an insulating layer 500 is formed on the sidewall of the electrode structure 201 of the light-emitting element 200 corresponding to the through hole 101 to ensure electrical insulation between the electrode structure 201 and the thermally conductive metal layer 320 formed subsequently.
  • a first thermally conductive metal layer 321 is formed on the second surface 120 of the substrate 100 and the inner wall of the through hole 101 by sputtering or evaporation.
  • a graphic template 700 is provided.
  • the surface of the graphic template 700 has a concave-convex structure with a preset shape.
  • a second thermally conductive metal layer 322 is formed by chemical evaporation in the concave and convex structure on the surface of the pattern template 700.
  • the pattern template 700 with the second thermally conductive metal layer 322 in Figure 8d is bonded to the first thermally conductive metal layer 321 in Figure 8b, between the first thermally conductive metal layer 321 and the second thermally conductive metal layer 322 A hollow structure 323 is formed, the second thermally conductive metal layer 322 forms a continuous structure with the first thermally conductive metal layer 321 at both ends of the first thermally conductive metal layer 321, a hole is opened in the hollow structure 323, and the refrigerant is injected into the hollow structure 323 through the opening. , after the filling is complete, the hollow structure 323 is welded and sealed. At the same time, wet etching is used to remove the pattern template 700 to form the thermal conductive structure 300.
  • oil is used as the refrigerant medium 324. The heated molecular motion of the oil can achieve faster thermal conductivity, which can further enhance the heat dissipation effect of the light-emitting device.
  • This embodiment provides a display, which includes the light-emitting device described in any one of Embodiments 1 to 4. Similarly, this embodiment uses the thermal conductive structure 300 in the substrate 100 located below the light-emitting element 200 to conduct the heat generated when the light-emitting element 200 operates, which can effectively improve the heat dissipation efficiency of the light-emitting device and the display.

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Abstract

本发明公开了一种发光器件、显示器及发光器件的制备方法，发光器件包括基板，基板包括第一表面和第二表面，且基板内设置有贯穿基板的通孔，发光元件设置于基板的第一表面上，且与基板上的通孔相对应。导热结构填充基板内的通孔，且导热结构的一端自通孔延伸至与发光元件紧密贴合，另一端自通孔延伸至与基板的第二表面平齐或覆盖基板的第二表面。由此，本发明的发光器件能够通过位于发光元件下方基板内的导热结构对发光元件工作时产生的热量进行传导，进而提高发光器件的散热效率。

Description

一种发光器件、显示器及发光器件的制备方法 技术领域
本发明涉及半导体器件技术领域，具体涉及一种发光器件、显示器及发光器件的制备方法。
 背景技术
LED显示屏具有色彩丰富、易于拼缝、均匀性较好、功耗较低等性能优势，被广泛应用于会议场所、军事指挥、安防显示、商业显示等领域。LED显示屏内设置有若干LED芯片，由于若干LED芯片设置于电路板和显示面板围合形成的密闭空间中，LED芯片工作时产生的热量因难以散发而导致积聚，使得LED芯片易产生高温而损坏，影响显示屏亮度及使用寿命。
在现有技术中，显示屏中的LED芯片工作时产生的热量一般通过线路板进行传导，并通过线路板或显示屏外壳进行自然散热。然而，现有线路板的导热系数很低，不能对LED芯片产生的热量进行有效导热，严重影响了显示屏的散热效果。
 技术解决方案
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种发光器件、显示器及发光器件的制备方法。
为了实现上述目的及其他相关目的，本发明提供一种发光器件，包括：
基板，包括相对设置的第一表面和第二表面，基板开设有贯穿基板的通孔；
发光元件，设置于基板的第一表面，并与通孔对应设置；
导热结构，填充通孔，且导热结构的一端自通孔延伸至与发光元件紧密贴合，另一端延伸至与基板的第二表面平齐或覆盖基板的第二表面。
可选地，导热结构形成为填充于通孔内的导热柱，导热柱的一端自通孔延伸至与发光元件紧密贴合，另一端与基板的第二表面平齐。
可选地，还包括：
散热结构，贴合于基板的第二表面，且与导热柱紧密贴合。
可选地，形成导热柱的材料包括导热金属或导热硅脂中的一种。
可选地，导热结构包括：
导热柱，填充于通孔内；以及
导热金属层，覆盖于基板的第二表面。
可选地，导热金属层在远离基板的一侧形成凹凸结构。
可选地，导热结构包括：
第一导热金属层，覆盖通孔内壁以及基板的第二表面；以及
第二导热金属层，覆盖第一导热金属层并且填充通孔。
可选地，导热结构包括：
第一导热金属层，覆盖通孔内壁以及基板第二表面；
第二导热金属层，位于第一导热金属层上方并与第二导热金属层形成中空结构，第二导热金属层在第一导热金属层两端与第一导热金属层形成连续结构；以及
冷媒介质，填充中空结构及通孔。
可选地，导热结构的第二导热金属层在远离基板的一侧形成凹凸结构。
可选地，发光元件包括电极结构和发光结构，电极结构与基板的第一表面键合，发光结构与基板上的通孔相对应，并且导热结构的一端至通孔延伸至与发光结构紧密贴合。
可选地，当所述导热结构由导热金属材料形成时，所述导热结构与所述电极结构之间还设置有绝缘层。
本发明还提供一种发光器件的制备方法，包括以下步骤：
提供一基板，基板包括相对设置的第一表面和第二表面，在基板内形成贯穿基板的通孔；
将发光元件转移至基板的第一表面，使发光元件与通孔的位置相对应；
在通孔内填充导热材料形成导热结构，并且使导热结构的一端自通孔延伸至与发光元件连接，另一端延伸至与基板的第二表面齐平或覆盖基板的第二表面。
可选地，在通孔内填充导热材料形成导热结构，还包括：
采用蒸镀或溅镀的方式在通孔内形成导热柱，并且使得导热柱的一端与发光器件形成紧密贴合，另一端延伸至与基板的第二表面平齐；或在通孔内形成导热柱，使得导热柱的一端与发光器件形成紧密贴合，另一端延伸至与基板的第二表面平齐。
可选地，还包括：
提供一散热结构；
将散热结构与基板的第二表面及与基板的第二表面齐平的导热柱紧密贴合。
可选地，在通孔内填充导热材料形成导热结构，包括：
通过蒸镀或溅镀的方式在通孔的内壁形成导热柱；
通过化学蒸镀的方式在基板的第二表面以及与基板第二表面齐平的导热柱的表面形成导热金属层；
刻蚀导热金属层，使导热金属层在远离基板的一侧形成凹凸结构。
可选地，在通孔内填充导热材料形成导热结构，包括：
通过蒸镀或溅镀的方式在基板的第二表面及通孔的内壁形成第一导热金属层；
通过化学蒸镀的方式在第一导热金属层的表面形成第二导热金属层，并使得第二导热金属层填充通孔。
可选地，在通孔内填充导热材料形成导热结构，包括：
通过蒸镀或溅镀的方式在基板的第二表面及通孔的内壁形成第一导热金属层；
提供一图形模板；
在图形模板的表面形成具有预设形貌的第二导热金属层；
在第一导热金属层的两端将第二导热金属层键合至第二导热金属层，以在第一导热金属层和第二导热金属层之间形成中空结构；
在中空结构内注入冷媒介质。
可选地，导热结构的第二导热金属层在远离基板的一侧形成为凹凸结构。
本发明还提供一种显示器，包括如上述任一的发光器件。
 有益效果
与现有技术相比，本发明所述的发光器件、显示器及发光器件的制备方法至少具备如下有益效果：
本发明所述的发光器件包括基板，基板包括相对设置的第一表面和第二表面，基板开设有通孔，发光元件设置于基板的第一表面上，且与基板上的通孔相对应。导热结构填充基板内的通孔，且导热结构的一端自通孔延伸至与发光元件紧密贴合，另一端延伸至与基板的另一表面平齐或覆盖基板的第二表面。其中，导热结构采用导热系数较高的材料，可以将发光元件产生的热量直接传到至散热结构，缩短散热路径，减少基板本身传到的热量。同时，上述导热结构与发光元件直接接触，实现导热结构与发光元件具有最大的接触面积，增加导热面积。由此实现发光器件的高效散热，降低发光元件的温度，提高发光元件及发光器件的寿命。
另外，本申请的导热结构可以具有多种设置，可以根据基板的类型设置具有不同结构的导热结构。同时形成导热结构的导热材料也可以根据实际情况做出多种选择，由此增加了导热结构的适用范围，使其能够适用于不同基板类型的发光器件，提高各种发光器件的散热效果及寿命。
本发明中所述的显示器及发光器件的制备方法均包括上述发光器件的制备方法，同样能够达到上述技术效果。
 附图说明
图1为本发明实施例1中所述的发光器件的结构示意图；
图2为本发明实施例2中所述的发光器件的结构示意图；
图3为本发明实施例3所述的发光器件的结构示意图；
图4为本发明实施例4所述的发光器件的结构示意图；
图5为本发明实施例5中基板上的通孔形成的结构示意图；
图6为本发明实施例6中基板上的通孔形成的结构示意图；
图7a为本发明实施例7中将发光元件键合至基板第一表面的结构示意图；
图7b为本发明实施例7中将通孔形成为梯形孔的结构示意图；
图7c为本发明实施例7将第一导热金属层形成于基板的第二表面以及通孔内壁的结构示意图；
图7d为本发明实施例7中将第二导热金属层形成于第一导热金属层的结构示意图；
图8a为本发明实施例8中在发光元件的电极结构对应于通孔的内壁上形成绝缘层的结构示意图；
图8b为本发明实施例8中在基板的第二表面以及通孔的内壁上形成第一导热金属层的结构示意图；
图8c为本发明实施例8中提供图形模板的结构示意图；
图8d为本发明实施例8中在图形模板的表面形成第二导热金属层的结构示意图；
图8e为本发明实施例8中将图8b和图8d形成的结构相键合，以在第一导热金属层和第二导热金属层之间形成中空结构的结构示意图。
 附图标记列表：
100 基板
101 通孔
110 第一表面
120 第二表面
200 发光元件
201 电极结构
202 发光结构
300 导热结构
310 导热柱
320 导热金属层
321 第一导热金属层
322 第二导热金属层
323 中空结构
324 冷媒介质
400 散热结构
401 散热基板
402 散热鳍片
500 绝缘层
600 光刻胶掩膜
601 开口
700 图形模板
 本发明的实施方式
以下由特定的具体实施例说明本发明的实施方式，熟悉此技术的人士可由本说明书所揭露的内容轻易地了解本发明的其他优点及功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本申请的精神下进行各种修饰或改变。需说明的是，在不冲突的情况下，以下实施例及实施例中的特征可以相互组合。
须知，本发明实施例中所提供的图示仅以示意方式说明本发明的基本构想，虽图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的形态、数量及比例可随意的改变，且其组件布局形态也可能更为复杂。说明书附图所绘示的结构、比例、大小等，均仅用以配合说明书所揭示的内容，以供熟悉此技术的人士了解与阅读，并非用以限定本申请可实施的限定条件，故不具技术上的实质意义，任何结构的修饰、比例关系的改变或大小的调整，在不影响本发明所能产生的功效及所能达成的目的下，均应仍落在本申请所揭示的技术内容得能涵盖的范围内。
 实施例1
本实施例提供一种发光器件，该发光器件包括基板、发光元件及导热结构。其中，基板具备相对设置的第一表面和第二表面，基板开设有贯穿基板的通孔，该通孔连接基板的第一表面和第二表面。发光元件设置于基板的第一表面，并且与通孔对应设置。导热结构的一端自通过通孔延伸至与发光元件紧密贴合，另一端延伸至与基板的第二表面平齐或覆盖基板的第二表面。由此，位于基板第一表面的发光元件能够通过导热结构将发光元件的工作时产生的热量传导至基板的第二表面，进而能够提高发光器件的发光亮度及使用寿命。
具体地，参照图1，基板100包括驱动电路，该驱动电路用于电连接发光元件200，并控制发光元件200的亮灭。可选地，基板100可以为PCB基板、TFT基板以及柔性PI基板中的一种。在本实施例中，基板100以TFT（Thin Film Transistor，薄膜晶体管）基板为例进行说明。
发光元件200作为发光器件的光源，设置在基板100的第一表面110，并且与基板100上的通孔101相对应。在本实施例中，发光元件200包括发光结构202和电极结构201，发光元件200的两个电极结构202与基板100的第一表面110键合，发光元件200的发光结构202对应于基板100的通孔101，并能够作为通孔101的底壁用于后续直接生长导热材料。可选地，发光元件200为LED芯片或微型LED芯片，例如，微型红光LED芯片、微型蓝光LED芯片或微型绿光LED芯片。需要说明的是，在本发明中，发光元件200的个数为若干个，本实施例仅以在基板100上设置单个发光元件200作为示例，并不能视为对本发明的限制。
导热结构300填充通孔101，且导热结构300的一端自通孔101延伸至与发光元件200的发光结构202紧密贴合，另一端自通孔101延伸至与基板100的第二表面120平齐。在本实施例中，导热结构300均形成于通孔101内对应于发光元件200的发光结构202表面，进而在通孔101内形成导热结构时，导热结构300可直接生长于发光结构202的表面，实现导热结构300与发光元件200的发光结构直接接触，进一步能够提高散热效率。需要说明的是，导热结构300材料的导热系数需大于基板100材料的导热系数，以提高基板100对发光元件200产生热量传递效率。在本实施例中，导热结构300包括填充于通孔101内的第一部分和覆盖于基板100第二表面120的第二部分，第一部分形成为导热柱310，第二部分形成为导热金属层320，第一部分和第二部分形成为一体结构，其材料均为导热金属，例如，钛或铜。导热柱310与发光元件200的电极结构201之间还设置有绝缘层500，以将电极结构201与导热金属电隔离。
在本实施例中，导热金属层320远离基板100的一侧还设置有散热结构400，该散热结构400形成为凹凸结构，能够增大散热器与自然空气的接触面积，有利于提高发光器件的散热效率。在其他实施例中，该散热结构也可以为独立的散热器，能与导热结构紧密贴合进行散热。例如，散热结构400可以为如图2所示的鳍片式散热器，鳍片式散热器包括散热基板401以及远离基板100一侧的散热鳍片402，散热基板401与图1中的导热金属层320紧密贴合，使散热基板401与图1中导热结构300形成紧密连接，通过散热基板401传导热量至散热鳍片402进行散热。
在本实施例中，导热柱310和导热金属层320均通过真空蒸镀或者化学蒸镀的方式生长，该生长方式能够使得导热柱310和发光元件200生长在一起，实现无缝衔接，避免发光元件200与导热柱310不能形成有效接触，导致导热面积减小的问题。
 实施例2
本实施例提供一种发光器件，该发光器件同样包括基板、发光元件及导热结构。其中，基板具备相对设置的第一表面和第二表面，基板开设有贯穿基板的通孔，该通孔连接基板的第一表面和第二表面。发光元件设置于基板的第一表面，并且与通孔对应设置。导热结构的一端自通过通孔延伸至与发光元件紧密贴合，另一端延伸至与基板的第二表面平齐。其与实施例1的相同之处，在此不再一一赘述，其不同之处在于：
参照图2，在本实施例中，导热结构300为形成于通孔101内的导热柱310，导热柱310的材料为导热硅脂。并且，在基板100的第二表面120形成有散热结构400，该散热结构400与基板100的第二表面120、与基板100的第二表面120平齐的导热硅脂相贴合。在本实施例中，散热结构400为鳍片式散热器，散热器包括散热基板401和远离基板100的一侧散热鳍片402，该散热鳍片402能够进一步将发光元件200产生的热量散发出去，有利于提高发光元件200的散热效率。
 实施例3
本实施例提供一种发光器件，该发光器件同样包括基板、发光元件及导热结构。其中，基板具备相对设置的第一表面和第二表面，基板开设有贯穿基板的通孔，该通孔连接基板的第一表面和第二表面。发光元件设置于基板的第一表面，并且与通孔对应设置。导热结构的一端自通过通孔延伸至与发光元件紧密贴合，另一端延伸并覆盖基板的第二表面。其与实施例1的相同同之处，在此不再一一赘述，其不同之处在于：
参照图3，在本实施例中，基板100为柔性PI基板，导热结构300包括第一导热金属层321和第二导热金属层322，其中，第一导热金属层321覆盖于基板100的第二表面120以及通孔101的内壁，并且，第一导热金属层321通过蒸镀或者溅射的方式形成，以使得第一导热金属层321与发光元件200暴露于通孔101内的底部形成紧密连接。可选地，第一导热金属层321的厚度小于1μm。在本实施例中，第一导热金属层321与发光元件200的电极结构201之间还设置有绝缘层500，以将电极结构201与导热金属电隔离。
第二导热金属层322覆盖于第一导热金属层321并且填充通孔101，并且第二导热金属层322在远离基板100的一侧形成散热结构400，该散热结构400为凹凸结构，能够增大第二导热金属层322与外界接触的面积，增加导热或散热效果。
 实施例4
本实施例提供一种发光器件，该发光器件同样包括基板、发光元件及导热结构。其中，基板具备相对设置的第一表面和第二表面，基板开设有贯穿基板的通孔，该通孔连接基板的第一表面和第二表面。发光元件设置于基板的第一表面，并且与通孔对应设置。导热结构的一端自通过通孔延伸至与发光元件紧密贴合，另一端延伸并覆盖基板的第二表面。其与实施例1的相同之处，在此不再一一赘述，其不同之处在于：
参照图4，在本实施例中，导热结构300包括第一导热金属层321、第二导热金属层322以及冷媒介质324，其中，第一导热金属层321覆盖通孔101内壁以及基板100的第二表面120，第二导热金属层322位于第一导热金属层321的上方，并与第二导热金属层322形成中空结构323，第二导热金属层322在第一导热金属层322两端与第一导热金属层321形成连续结构。冷媒介质324填充中空结构323以及通孔101。在本实施例中，第一导热金属层321与发光元件200的电极结构201之间也设置有绝缘层500，以将电极结构201与导热金属电隔离。可选地，冷媒介质324可以为水、油或空气中的一种。在本实施例中，冷媒介质324为油，通过油受热的分子运动以实现更快的导热效果，提高散热效率。
 实施例5
本实施例提供一种发光器件的制备方法，包括以下步骤：
S101：提供一基板，基板包括相对设置的第一表面和第二表面，在基板形成贯穿基板的通孔；
参照图5，提供一基板100，该基板100具有相对设置的第一表面110和第二表面120，通过激光在基板100上形成通孔101。在其他实施例中，也可以通过在基板100的上方形成光刻胶掩膜600，在光刻胶掩膜600上形成开口601，沿开口601对基板100进行刻蚀，以在基板100上形成通孔101，如图6所示。
S102：将发光元件转移至基板的第一表面，使发光元件与通孔的位置相对应；
参照图7a，将发光元件200转移并键合至基板100的第一表面110，使发光元件200与通孔101的位置相对应，发光元件200的发光结构202覆盖该通孔101。
S103：在通孔内填充导热材料形成导热结构，并且使导热结构的一端自通孔延伸至与发光元件连接，另一端延伸并覆盖基板的第二表面。
在本实施例中，参照图1，在基板100的第二表面120的通孔101内蒸镀导热金属材料，使得导热金属材料层填充通孔101形成导热柱310，继续化学蒸镀导热金属材料，使在基板100的第二表面120形成导热金属层320，该导热柱310与导热金属层320形成为一体结构。由于在本实施例的通孔101内形成的材料为导热金属材料，为了使该导热金属材料与发光元件200的电极结构201形成电绝缘，本实施例在形成导热金属层320之前，还包括在发光元件200的电极结构201与导热金属材料之间形成一层绝缘层500。具体地，可以在基板100第二表面120的通孔101内蒸镀导热金属材料之前，通过通孔101沉积一层薄薄的绝缘层，刻蚀去除沉积于通孔101内壁以及通过通孔101沉积于发光结构202表面的绝缘层，以获得图1中通过通孔101形成于电极结构201表面的绝缘层500。
刻蚀导热金属层320，使在导热金属层320远离基板100的一侧形成散热结构400，该散热结构400形成为凹凸结构，以增大导热金属层320与外界接触的面积，增加散热效果。
 实施例6
本实施例提供一种发光器件的制备方法，其与实施例5的相同之处，在此不再一一赘述，其不同之处在于：
S103：在通孔内填充导热材料形成导热结构，并且使导热结构的一端自通孔延伸至与发光元件连接，另一端延伸至与基板的第二表面齐平。
本实施例中，参照图2，采用旋涂或者喷涂的方式在通孔101内形成导热硅脂，由于导热硅脂的绝缘特性，因而，在通孔101内填充导热硅脂前，无需先形成一层绝缘层500，进而简化了制备步骤，节省了发光器件的制作成本。
在形成导热硅脂之后，还包括：提供一鳍片式散热器，该鳍片式散热器包括散热基板401以及设置于散热基板一侧的散热鳍片402，将基板100的第二表面120与散热基板401的表面相贴合，使导热硅脂与该散热基板401形成紧密贴合，通过导热硅脂将发光元件200产生的热量传导至散热基板401，通过散热鳍片402进一步增加散热效果。
 实施例7
本实施例提供一种发光器件的制备方法，其与实施例5的相同之处，在此不再一一赘述，其不同之处在于：
S101：提供一基板，基板包括相对设置的第一表面和第二表面，在基板形成贯穿基板的通孔；
参照图6，提供一基板100，基板100具有相对设置的第一表面110和第二表面120。本实施例中的基板100为柔性PI基板，通过在柔性PI基板的上方形成光刻胶掩膜600，在光刻胶掩膜600上形成开口601，沿开口601对基板100进行刻蚀，以在基板100上形成通孔101。
S103：在通孔内填充导热材料形成导热结构，并且使导热结构的一端自通孔延伸至与发光元件连接，另一端延伸并覆盖基板的第二表面。
参照图7b，通过通孔101沉积一层绝缘层，刻蚀去除位于通孔101内壁以及通过通孔101沉积于发光结构202表面的绝缘层，以获得通过通孔101沉积于电极结构201表面的绝缘层500。
为了使导热材料更容易在通孔101的内壁或者绝缘层500上沉积，本实施例在形成绝缘层500之后，还包括对通孔101以及位于电极结构201表面的绝缘层500进行预处理，使通孔101与位于电极结构201表面的绝缘层500构成的通孔形成为梯形孔。具体地，该梯形孔可以通过同时刻蚀通孔101的内壁以及位于电极结构201表面的绝缘层500形成。
参照图7c，在基板100的第二表面120以及梯形孔的内壁上以溅镀或蒸镀的方式形成第一导热金属层321。
参照图7d，在第一导热金属层321的表面通过化学蒸镀的方式形成第二导热金属层322。
参照图3，刻蚀第二导热金属层322，使第二导热金属层322在远离基板100的第二表面120的一侧形成散热结构400，该散热结构400形成为凹凸结构，该凹凸结构能够增加与外界的接触面积，增加散热效果。
 实施例8
本实施例提供一种发光器件的制备方法，其与实施例5的相同之处，在此不再一一赘述，其不同之处在于：
S103：在通孔内填充导热材料形成导热结构，并且使导热结构的一端自通孔延伸至与发光元件连接，另一端延伸并覆盖基板的第二表面。
参照图8a，在发光元件200电极结构201对应于通孔101的侧壁上形成绝缘层500，以保证电极结构201与后续形成的导热金属层320电绝缘。
参照图8b，在基板100的第二表面120以及通孔101的内壁以溅镀或蒸镀的方式形成第一导热金属层321。
参照图8c，提供一图形模板700，该图形模板700的表面具有预设形貌的凹凸结构。
参照图8d，在图形模板700表面的凹凸结构中化学蒸镀形成第二导热金属层322。
参照图8e，将图8d中带有第二导热金属层322的图形模板700与图8b中的第一导热金属层321相键合，第一导热金属层321和第二导热金属层322之间形成中空结构323，第二导热金属层322在第一导热金属层321两端与第一导热金属层321形成连续结构，在中空结构323开孔，将冷媒通过该开孔注入至中空结构323内，待填充完全之后，焊接密封该中空结构323。同时，采用湿法刻蚀去除图形模板700，形成导热结构300。本实施例采用油作为冷媒介质324，通过油受热的分子运动以实现更快的导热效果，能够进一步增强发光器件的散热效果。
 实施例9
本实施例提供一种显示器，其包括实施例1~4中任一所述的发光器件。同样地，本实施例采用位于发光元件200下方的基板100内导热结构300对发光元件200工作时产生的热量进行传导，能够有效提高发光器件及显示器的散热效率。
 上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (19)

  1. 一种发光器件，其特征在于，包括：基板，包括相对设置的第一表面和第二表面，所述基板开设有贯穿所述基板的通孔；发光元件，设置于所述基板的第一表面，并与所述通孔对应设置；导热结构，填充所述通孔，且所述导热结构的一端自所述通孔延伸至与所述发光元件紧密贴合，另一端延伸至与所述基板的第二表面平齐或覆盖所述基板的第二表面。
  2. 根据权利要求1所述的发光器件，其特征在于，所述导热结构形成为填充于所述通孔内的导热柱，所述导热柱的一端自所述通孔延伸至与所述发光元件紧密贴合，另一端与所述基板的第二表面平齐。
  3. 根据权利要求2所述的发光器件，其特征在于，还包括：
    散热结构，贴合于所述基板的第二表面，且与所述导热柱紧密贴合。
  4. 根据权利要求2所述的发光器件，其特征在于，形成所述导热柱的材料包括导热金属或导热硅脂中的一种4。
  5. 根据权利要求1所述的发光器件，其特征在于，所述导热结构包括：导热柱，填充于所述通孔内；以及导热金属层，覆盖于所述基板的第二表面。
  6. 根据权利要求5所述的发光器件，其特征在于，所述导热金属层在远离所述基板的一侧形成凹凸结构。
  7. 根据权利要求1所述的发光器件，其特征在于，所述导热结构包括：第一导热金属层，覆盖所述通孔内壁以及所述基板的第二表面；以及第二导热金属层，覆盖所述第一导热金属层并且填充所述通孔。
  8. 根据权利要求1所述的发光器件，其特征在于，所述导热结构包括：第一导热金属层，覆盖所述通孔内壁以及所述基板第二表面；第二导热金属层，位于所述第一导热金属层上方并与所述第二导热金属层形成中空结构，所述第二导热金属层在所述第一导热金属层两端与所述第一导热金属层形成连续结构；以及冷媒介质，填充所述中空结构及所述通孔。
  9. 根据权利要求7或8所述的发光器件，其特征在于，所述导热结构的第二导热金属层在远离所述基板的一侧形成凹凸结构。
  10. 根据权利要求1所述的发光器件，其特征在于，所述发光元件包括电极结构和发光结构，所述电极结构与所述基板的第一表面键合，所述发光结构与所述基板上的通孔相对应，并且所述导热结构的一端至所述通孔延伸至与所述发光结构紧密贴合。
  11. [根据细则26改正 24.04.2022]
    根据权利要求10所述的发光器件，其特征在于，当所述导热结构由导热金属材料形成时，所述导热结构与所述电极结构之间还设置有绝缘层。
  12. [根据细则26改正 24.04.2022]
    一种发光器件的制备方法，其特征在于，包括以下步骤：提供一基板，所述基板包括相对设置的第一表面和第二表面，在所述基板内形成贯穿所述基板的通孔；将发光元件转移至所述基板的第一表面，使所述发光元件与所述通孔的位置相对应；在所述通孔内填充导热材料形成导热结构，并且使所述导热结构的一端自所述通孔延伸至与所述发光元件连接，另一端延伸至与所述基板的第二表面齐平或者覆盖所述基板的第二表面。
  13. [根据细则26改正 24.04.2022]
    根据权利要求12所述的发光器件的制备方法，其特征在于，在所述通孔内填充导热材料形成导热结构，还包括：采用蒸镀或溅镀的方式在所述通孔内形成导热柱，并且使得所述导热柱的一端与所述发光器件形成紧密贴合，另一端延伸至与所述基板的第二表面平齐；或在所述通孔内形成导热柱，使得所述导热柱的一端与所述发光器件形成紧密贴合，另一端延伸至与所述基板的第二表面平齐。
  14. [根据细则26改正 24.04.2022]
    根据权利要求13所述的发光器件的制备方法，其特征在于，还包括：提供一散热结构；将所述散热结构与所述基板的第二表面及与所述基板的第二表面平齐的导热柱紧密贴合。
  15. [根据细则26改正 24.04.2022]
    根据权利要求12所述的发光器件的制备方法，其特征在于，在所述通孔内填充导热材料形成导热结构，包括：通过蒸镀或溅镀的方式在通孔的内壁形成导热柱；通过化学蒸镀的方式在所述基板的第二表面以及与所述基板第二表面齐平的导热柱的表面形成导热金属层；刻蚀所述导热金属层，使所述导热金属层在远离所述基板的一侧形成凹凸结构。
  16. [根据细则26改正 24.04.2022]
    根据权利要求12所述的发光器件的制备方法，其特征在于，在所述通孔内填充导热材料形成导热结构，包括：通过蒸镀或溅镀的方式在所述基板的第二表面及所述通孔的内壁形成第一导热金属层；通过化学蒸镀的方式在所述第一导热金属层的表面形成第二导热金属层，并使得所述第二导热金属层填充所述通孔。
  17. [根据细则26改正 24.04.2022]
    根据权利要求12所述的发光器件的制备方法，其特征在于，在所述通孔内填充导热材料形成导热结构，包括：通过蒸镀或溅镀的方式在所述基板的第二表面及所述通孔的内壁形成第一导热金属层；提供一图形模板；在所述图形模板的表面形成具有预设形貌的第二导热金属层；在所述第一导热金属层的两端将所述第二导热金属层键合至所述第二导热金属层，以在所述第一导热金属层和第二导热金属层之间形成中空结构；在所述中空结构内注入冷媒介质。
  18. [根据细则26改正 24.04.2022]
    根据权利要求16或17所述的发光器件的制备方法，其特征在于，所述导热结构的第二导热金属层在远离所述基板的一侧形成为凹凸结构。
  19. [根据细则26改正 24.04.2022]
    一种显示器，其特征在于，包括如权利要求1~11任一所述的发光器件。
     
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