WO2023164977A1 - 显示面板及其修复方法 - Google Patents

显示面板及其修复方法 Download PDF

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Publication number
WO2023164977A1
WO2023164977A1 PCT/CN2022/080866 CN2022080866W WO2023164977A1 WO 2023164977 A1 WO2023164977 A1 WO 2023164977A1 CN 2022080866 W CN2022080866 W CN 2022080866W WO 2023164977 A1 WO2023164977 A1 WO 2023164977A1
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WO
WIPO (PCT)
Prior art keywords
electrode
sub
repair
display panel
pixel
Prior art date
Application number
PCT/CN2022/080866
Other languages
English (en)
French (fr)
Inventor
王若男
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US17/756,047 priority Critical patent/US20240155911A1/en
Publication of WO2023164977A1 publication Critical patent/WO2023164977A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/861—Repairing

Definitions

  • the present application relates to the field of display technology, in particular to a display panel and a repair method thereof.
  • OLED Organic Light-Emitting Diode
  • Embodiments of the present application provide a display panel and a repairing method thereof, capable of repairing dark sub-pixels in the case of dark-spot sub-pixels, so as to improve the manufacturing yield of the display panel.
  • the present application provides a display panel, the display panel includes a plurality of sub-pixels, each of the sub-pixels includes an active layer, a source, an anode and a repair electrode arranged on a substrate, the source is located on the Between the active layer and the anode, the repair electrode is connected to the source and is located on a side of the active layer close to the anode;
  • the repair electrode of one sub-pixel overlaps with the orthographic projection of the anode of the other sub-pixel on the substrate, and one of the sub-pixels A repair electrode of a pixel is insulated from said anode of another said sub-pixel.
  • the anode has an extension, and in a direction parallel to the plane where the substrate is located, for two adjacent sub-pixels, one of the sub-pixels.
  • the repair electrode extends toward the extension portion of another sub-pixel, the extension portion of the other sub-pixel extends toward the repair electrode of one sub-pixel, and the extension portion of one sub-pixel extends toward the repair electrode of one sub-pixel.
  • the repair electrode overlaps the orthographic projection of the extension of another of the sub-pixels on the substrate.
  • the repair electrode of one sub-pixel is set on the same layer as the source electrode, and connects from one end of the source electrode extending toward the direction of the extension portion of the other sub-pixel.
  • the display panel further includes a passivation layer, a protective electrode, and a planarization layer sequentially arranged between the source electrode and the anode, and the passivation layer A contact hole is opened, the protection electrode is connected to the source electrode through the contact hole, a via hole connected to the contact hole is opened in the planarization layer, and the anode is connected to the source electrode through the via hole.
  • Guard electrode connection ;
  • the orthographic projection of the protection electrode on the plane of the substrate is at least partially overlapped with the orthographic projection of the repair electrode on the plane of the substrate.
  • connection hole spaced apart from the contact hole is also opened in the passivation layer, and the connection hole is located between the protection electrode and the repair electrode.
  • the protection electrode is connected to the repair electrode through the connection hole.
  • the display panel further includes a passivation layer, an auxiliary repair electrode, and a planarization layer sequentially arranged between the source electrode and the anode, and the auxiliary repair electrode
  • the orthographic projection on the plane where the substrate is located overlaps at least partially the orthographic projection of the repair electrode on the plane where the substrate is located, and a connection hole is opened in the passivation layer, and the auxiliary repair electrode passes through the connection hole Connect with the repair electrode.
  • the display panel further includes a protection electrode, the protection electrode is disposed between the passivation layer and the planarization layer, and a There is a contact hole spaced apart from the connection hole, the protection electrode is connected to the source through the contact hole, a via hole connected to the contact hole is opened in the planarization layer, and the anode passes through The via hole is connected to the protection electrode;
  • the auxiliary repair electrode and the protection electrode are arranged in the same layer and at intervals.
  • the display panel further includes a passivation layer, a protective electrode, and a planarization layer sequentially arranged between the source electrode and the anode, and the passivation layer A contact hole is opened, the protection electrode is connected to the source electrode through the contact hole, a via hole connected to the contact hole is opened in the planarization layer, and the anode is connected to the source electrode through the via hole.
  • Guard electrode connection ;
  • the repair electrode of one sub-pixel is set on the same layer as the protection electrode, and is directed from one end of the protection electrode toward the extension of the other sub-pixel. direction extension.
  • the display panel further includes an auxiliary repair electrode, the auxiliary repair electrode is arranged on the same layer as the source electrode at intervals, and the auxiliary repair electrode is located on the substrate where the substrate is located.
  • the orthographic projection of the plane at least partially overlaps the orthographic projection of the repair electrode on the plane where the substrate is located, and a connection hole spaced apart from the contact hole is opened in the passivation layer, and the auxiliary repair electrode passes through the The connection hole is connected with the repair electrode.
  • the emission colors of the two adjacent sub-pixels are the same.
  • the present application also provides a method for repairing a display panel as described in any one of the foregoing embodiments, which includes the following steps:
  • the present application also provides a display panel, which includes a plurality of sub-pixels, each of which includes an active layer, a source electrode, an anode, and a repair electrode arranged on a substrate, and the source electrode is arranged on Between the active layer and the anode, the repair electrode is connected to the source and is located on a side of the active layer close to the anode;
  • the repair electrode of one sub-pixel overlaps with the orthographic projection of the anode of the other sub-pixel on the substrate, and one of the sub-pixels
  • the repair electrode of a pixel is connected to the anode of another sub-pixel.
  • the anode has an extension, and in a direction parallel to the plane where the substrate is located, for two adjacent sub-pixels, one of the sub-pixels.
  • the repair electrode extends toward the extension portion of another sub-pixel, the extension portion of the other sub-pixel extends toward the repair electrode of one sub-pixel, and the extension portion of one sub-pixel extends toward the repair electrode of one sub-pixel.
  • the repair electrode overlaps the orthographic projection of the extension of another of the sub-pixels on the substrate.
  • the repair electrode of one sub-pixel is set on the same layer as the source electrode, and connects from one end of the source electrode extending toward the direction of the extension portion of the other sub-pixel.
  • the display panel further includes a passivation layer, a protective electrode, and a planarization layer sequentially arranged between the source electrode and the anode, and the passivation layer A contact hole is opened, the protection electrode is connected to the source electrode through the contact hole, a via hole connected to the contact hole is opened in the planarization layer, and the anode is connected to the source electrode through the via hole.
  • Guard electrode connection ;
  • the orthographic projection of the protection electrode on the plane of the substrate is at least partially overlapped with the orthographic projection of the repair electrode on the plane of the substrate.
  • connection hole spaced apart from the contact hole is also opened in the passivation layer, and the connection hole is located between the protection electrode and the repair electrode.
  • the protection electrode is connected to the repair electrode through the connection hole.
  • the display panel further includes a passivation layer, an auxiliary repair electrode, and a planarization layer sequentially arranged between the source electrode and the anode, and the auxiliary repair electrode
  • the orthographic projection on the plane where the substrate is located overlaps at least partially the orthographic projection of the repair electrode on the plane where the substrate is located, and a connection hole is opened in the passivation layer, and the auxiliary repair electrode passes through the connection hole Connect with the repair electrode.
  • the display panel further includes a protection electrode, the protection electrode is disposed between the passivation layer and the planarization layer, and a There is a contact hole spaced apart from the connection hole, the protection electrode is connected to the source through the contact hole, a via hole connected to the contact hole is opened in the planarization layer, and the anode passes through The via hole is connected to the protection electrode;
  • the auxiliary repair electrode and the protection electrode are arranged in the same layer and at intervals.
  • the display panel further includes a passivation layer, a protective electrode, and a planarization layer sequentially arranged between the source electrode and the anode, and the passivation layer A contact hole is opened, the protection electrode is connected to the source electrode through the contact hole, a via hole connected to the contact hole is opened in the planarization layer, and the anode is connected to the source electrode through the via hole.
  • Guard electrode connection ;
  • the repair electrode of one sub-pixel is set on the same layer as the protection electrode, and is directed from one end of the protection electrode toward the extension of the other sub-pixel. direction extension.
  • the emission colors of the two adjacent sub-pixels are the same.
  • the display panel provided by the present application is provided with a repair electrode in each sub-pixel, and for two adjacent sub-pixels, the repair electrode of one sub-pixel is connected to the anode of the other sub-pixel on the substrate
  • the orthographic projection on the display panel overlaps, when a dark spot sub-pixel appears in the display panel, by welding the repair electrode in the dark spot sub-pixel and the anode in the adjacent normal sub-pixel, the anode in the adjacent sub-pixel can drive the dark spot
  • the pixels emit light, and then the dark sub-pixels can be repaired into normal sub-pixels, thereby improving the manufacturing yield of the display panel.
  • FIG. 1 is a schematic plan view of a display panel provided by the present application.
  • FIG. 2 is a first structural schematic diagram of the display panel shown in FIG. 1 along the section line O-O'.
  • FIG. 3 is a second structural schematic view of the display panel shown in FIG. 1 along the section line O-O'.
  • FIG. 4 is a third structural schematic view of the display panel shown in FIG. 1 along the section line O-O'.
  • FIG. 5 is a fourth structural schematic diagram of the display panel shown in FIG. 1 along the section line O-O'.
  • FIG. 6 is a schematic diagram of a fifth structure of the display panel shown in FIG. 1 along the section line O-O'.
  • FIG. 7 is a sixth structural diagram of the display panel shown in FIG. 1 along the section line O-O'.
  • FIG. 8 is a seventh structural diagram of the display panel shown in FIG. 1 along the section line O-O'.
  • FIG. 9 is a schematic diagram of an eighth structure of the display panel shown in FIG. 1 along the section line O-O'.
  • FIG. 10 is a schematic structural view of the repaired display panel provided by the present application.
  • the present application provides a display panel, a repair method thereof, and a display device. Each will be described in detail below. It should be noted that, in the display panel of the present application, the source and drain of the thin film transistor can be interchanged. In this application, in order to distinguish the two poles of the TFT except the gate, one pole is called the source, and the other pole is called the drain.
  • the present application provides a display panel, which includes a plurality of sub-pixels; each sub-pixel includes an active layer, a source, an anode and a repair electrode arranged on a substrate; the source is arranged between the active layer and the anode Between, the repair electrode is connected to the source and is located on the side of the active layer close to the anode; wherein, for two adjacent sub-pixels, the orthographic projection of the repair electrode of one sub-pixel and the anode of the other sub-pixel on the substrate partially overlapped, and the repair electrode of one sub-pixel is insulated from the anode of the other sub-pixel.
  • a repair electrode is provided in each sub-pixel.
  • the repair electrode of one sub-pixel overlaps with the orthographic projection of the anode of the other sub-pixel on the substrate.
  • the anode in the adjacent sub-pixel can drive the dark sub-pixel to emit light, and then the dark sub-pixel can be turned Pixels are restored to normal sub-pixels, thereby improving the manufacturing yield of the display panel.
  • the “normal sub-pixel” refers to a sub-pixel that can normally emit light under the driving of a thin film transistor, which is different from the “dark sub-pixel”.
  • the first embodiment of the present application provides a display panel 100 .
  • the display panel 100 includes a plurality of sub-pixels 1 .
  • Each sub-pixel 1 includes a thin film transistor 11 , an anode 12 and a repair electrode 13 disposed on a substrate 10 .
  • the thin film transistor 11 includes a light shielding portion 111 , an active layer 112 , a gate insulating layer 113 , a gate 114 , a source 115 and a drain 116 .
  • the source 115 is connected to the anode 12 .
  • the repair electrode 13 is connected to the source electrode 115 .
  • each sub-pixel 1 has a light emitting area 1A and a repair area 1B located on one side of the light emitting area 1A.
  • both the thin film transistor 11 and the anode 12 are located in the light emitting region 1A.
  • the repair electrode 13 is located in the repair area 1B.
  • the repair area 1B of one sub-pixel 1 is adjacent to the light-emitting area 1A of another sub-pixel 1, and the light-emitting area 1A of another sub-pixel 1 has an intersection with the repair area 1B of one sub-pixel 1.
  • Overlapping area M as shown in Figure 2.
  • the repairing area 1B refers to an area where dark sub-pixels are repaired when dark sub-pixels appear in the display panel 100 .
  • the display panel 100 further includes a buffer layer 20 , an interlayer insulating layer 30 , a planarization layer 40 and a pixel definition layer 50 .
  • the buffer layer 20 , the interlayer insulating layer 30 , the planarization layer 40 and the pixel definition layer 50 are all disposed in the light emitting region 1A and the repairing region 1B.
  • the light shielding portion 111 is disposed on the substrate 10 .
  • the light-shielding part 111 can be a single-layer structure, a double-layer structure or a multi-layer structure.
  • the material of the light shielding portion 111 may include one or more of molybdenum, titanium, copper and aluminum.
  • the light-shielding portion 111 may include a bottom layer with titanium as the light-shielding material and a top layer with copper as the light-shielding material, or the light-shielding portion 111 may also include a molybdenum-titanium alloy as the light-shielding material The bottom layer and the top layer with copper as the shading material.
  • the thickness of the light-shielding portion 111 is 500 angstroms-2000 angstroms, such as 500 angstroms, 800 angstroms, 1000 angstroms, 1200 angstroms, 1500 angstroms, 1800 angstroms or 2000 angstroms.
  • the buffer layer 20 is disposed on a side of the light shielding portion 111 away from the substrate 10 .
  • the buffer layer 20 can be a single-layer structure, a double-layer structure or a multi-layer structure.
  • the material of the buffer layer 20 may include one or more of silicon nitride, silicon oxide and silicon oxynitride.
  • the buffer layer 20 may include a bottom layer made of silicon oxide as a buffer material and a top layer made of silicon nitride as a buffer material.
  • the thickness of the buffer layer 20 may be 1000 angstroms-5000 angstroms, such as 1000 angstroms, 1500 angstroms, 2000 angstroms, 2500 angstroms, 3000 angstroms, 3500 angstroms, 4000 angstroms, 4500 angstroms or 5000 angstroms.
  • the active layer 112 is disposed on a side of the buffer layer 20 away from the light shielding portion 111 .
  • the orthographic projection of the active layer 112 on the plane of the substrate 10 is located within the orthographic projection of the light shielding portion 111 on the plane of the substrate 10 .
  • the active layer 112 includes a channel 1121 and a source contact 1122 and a drain contact 1123 located on opposite sides of the channel 1121 .
  • the material of the active layer 112 may include one or more of IGZO, IGZTO, IGTO, IZTO and IZO.
  • the gate insulating layer 113 is disposed on a side of the active layer 112 away from the buffer layer 20 . From the source 115 toward the drain 116 , the width of the gate insulating layer 113 is slightly larger than the width of the channel 1121 .
  • the gate insulating layer 113 may have a single-layer structure, a double-layer structure or a multi-layer structure. Specifically, the material of the gate insulating layer 113 may include one or more of silicon nitride, silicon oxide and silicon oxynitride.
  • the gate insulating layer 113 may include a bottom layer made of silicon oxide as an insulating material and a top layer made of silicon nitride as an insulating material.
  • the thickness of the gate insulating layer 113 may be 500 angstroms-2000 angstroms, such as 500 angstroms, 800 angstroms, 1000 angstroms, 1200 angstroms, 1500 angstroms, 1800 angstroms or 2000 angstroms.
  • the gate 114 is disposed on a side of the gate insulating layer 113 away from the active layer 112 .
  • the orthographic projection of the gate 114 on the plane of the substrate 10 overlaps with the orthographic projection of the channel 1121 on the plane of the substrate 10 .
  • the gate 114 can be a single-layer structure, a double-layer structure or a multi-layer structure.
  • the material of the gate 114 may include one or more of molybdenum, titanium, copper and aluminum, or the material of the gate 114 may also include an alloy composed of at least two of the above metals.
  • the gate 114 may include a bottom layer made of molybdenum-titanium alloy as a conductive material and a top layer made of copper as a conductive material.
  • the thickness of the gate 114 is 2000 angstroms-8000 angstroms, such as 2000 angstroms, 3000 angstroms, 4000 angstroms, 5000 angstroms, 6000 angstroms, 7000 angstroms or 8000 angstroms.
  • the interlayer insulating layer 30 is disposed on a side of the gate 114 away from the gate insulating layer 113 .
  • the insulating interlayer 30 may have a single-layer structure, a double-layer structure, or a multi-layer structure.
  • the material of the interlayer insulating layer 30 may include one or more of silicon nitride, silicon oxide and silicon oxynitride.
  • the interlayer insulating layer 30 may include a bottom layer made of silicon oxide as an insulating material and a top layer made of silicon nitride as an insulating material.
  • the thickness of the interlayer insulating layer 30 may be 2000 angstroms-10000 angstroms, such as 2000 angstroms, 3000 angstroms, 4000 angstroms, 5000 angstroms, 6000 angstroms, 7000 angstroms, 8000 angstroms, 9000 angstroms or 10000 angstroms.
  • the source 115 and the drain 116 are disposed on a side of the interlayer insulating layer 30 away from the gate 114 .
  • the source electrode 115 is connected to the source electrode contact portion 1122 through a via hole (not marked in the figure).
  • the drain 116 is connected to the drain contact portion 1123 through another via hole (not marked in the figure).
  • Both the source electrode 115 and the drain electrode 116 may have a single-layer structure, a double-layer structure or a multi-layer structure.
  • the material of the source electrode 115 and the material of the drain electrode 116 are the same, and both may include one or more of molybdenum, titanium, copper and aluminum, or may also include an alloy composed of at least two of the above metals.
  • both the source electrode 115 and the drain electrode 116 may include a bottom layer made of molybdenum-titanium alloy as a conductive material and a top layer made of copper as a conductive material.
  • the thickness of the source electrode 115 and the thickness of the drain electrode 116 are the same, both are 2000 angstroms-8000 angstroms, such as 2000 angstroms, 3000 angstroms, 4000 angstroms, 5000 angstroms, 6000 angstroms, 7000 angstroms or 8000 angstroms.
  • the repair electrode 13 is connected to the source electrode 115 .
  • the repair electrode 13 of one subpixel 1 extends from one end of the source electrode 115 toward the anode 12 of the other subpixel 1 .
  • the extending direction of the repair electrode 13 of one sub-pixel 1 is opposite to the extending direction of the anode 12 of the other adjacent sub-pixel 1 .
  • the planarization layer 40 is disposed on a side of the source electrode 115 away from the interlayer insulating layer 30 .
  • a via hole 401 is opened in the planarization layer 40 .
  • the via hole 401 exposes the source electrode 115 .
  • the material of the planarization layer 40 may be an inorganic material, and the inorganic material may include one or more of silicon nitride, silicon oxide, and silicon oxynitride; or, the material of the planarization layer 40 may also be an organic materials, the organic materials may include organic resins, such as epoxy resins, acrylic resins, and the like.
  • the thickness of the planarization layer 40 may be 1000 angstroms-5000 angstroms, such as 1000 angstroms, 1500 angstroms, 2000 angstroms, 2500 angstroms, 3000 angstroms, 3500 angstroms, 4000 angstroms, 4500 angstroms or 5000 angstroms.
  • the anode 12 is disposed on a side of the planarization layer 40 away from the source 115 .
  • the anode 12 extends into the via hole 401 and is connected to the source 115 .
  • the anode 12 may have a single-layer structure, a double-layer structure or a three-layer structure.
  • the material of the anode 12 may include one or more of ITO, IZO, Ag, Pd, Cu, Al, Ni and La.
  • the anode 12 may be a three-layer structure of ITO/Ag/ITO.
  • the repair electrode 13 of one sub-pixel 1 overlaps with the orthographic projection of the anode 12 of another sub-pixel 1 on the substrate 10, and the repair electrode 13 of one sub-pixel 1 It is insulated from the anode 12 of another sub-pixel 1 .
  • the anode 12 has an extension 121 .
  • the extension 121 of one sub-pixel 1 extends toward the repair electrode 13 of the other sub-pixel 1, and is located in the repair area of the other sub-pixel 1 1B, the extension 121 of one sub-pixel 1 overlaps the orthographic projection of the repair electrode 13 of another sub-pixel 1 on the substrate 10 .
  • the repair electrode 13 in the dark-spot sub-pixel can be fused with the extension portion 121 of the adjacent normal sub-pixel by means of laser, so that The normal sub-pixels can be used to drive the dark sub-pixels to emit light, so that the dark sub-pixels can be restored to become normal sub-pixels, so as to improve the manufacturing yield of the display panel 100 , and further improve the display quality of the display panel 100 .
  • the light emission colors of two adjacent sub-pixels 1 in each column are the same.
  • the repair electrode 13 in the dark spot sub-pixel can be welded to the extension part 121 of the anode 12 of the adjacent normal sub-pixel 1 with the same luminous color, and then for the repair The resulting display panel 100 will not affect its display effect under normal display conditions, so that the display quality of the display panel 100 can be guaranteed while repairing dark sub-pixels.
  • the light emission colors of two adjacent sub-pixels 1 in each row can also be set to be the same, and the description of this embodiment should not be construed as a limitation to this application.
  • two adjacent sub-pixels 1 in each column may also be sub-pixels 1 with different light emitting colors, which will not be repeated here.
  • the display panel 100 also includes a light-emitting layer, a cathode, and an encapsulation layer (not shown in the figure), and the related technologies are all existing technologies, which will not be repeated here.
  • the second embodiment of the present application provides a display panel 200 .
  • the difference between the display panel 200 provided in the second embodiment of the present application and the first embodiment is that the display panel 200 further includes a passivation layer 60 and a protective electrode 117, and the passivation layer 60 is arranged on the source electrode 115 away from the interlayer insulating layer. 30, the protection electrode 117 is arranged between the passivation layer 60 and the planarization layer 40, and is located in the light-emitting region 1A.
  • a contact hole 601 connected to the via hole 401 is opened in the passivation layer 60, and the protection electrode 117 passes through the contact
  • the hole 601 is connected to the source electrode 115 , and the anode 12 is connected to the protection electrode 117 through the via hole 401 .
  • the contact hole 601 exposes the source electrode 115
  • the protection electrode 117 extends into the contact hole 601 and is connected to the source electrode 115
  • the via hole 401 exposes the protection electrode 117
  • the anode 12 extends into the via hole 401 and is connected to the protection electrode 117 .
  • the orthographic projection of the protection electrode 117 on the plane of the substrate 10 is located within the orthographic projection of the source electrode 115 on the plane of the substrate 10 .
  • the material of the protection electrode 117 may include one or more of molybdenum, titanium and indium tin oxide.
  • the source electrode 115 can be protected, preventing the metal material in the source electrode 115 from being oxidized, thereby improving the stability of the signal transmission of the source electrode 115. performance, so as to improve the driving performance of the thin film transistor 11.
  • the third embodiment of the present application provides a display panel 300 .
  • the display panel 300 provided by the third embodiment of the present application is different from the second embodiment in that: the orthographic projection of the protective electrode 117 on the plane of the substrate 10 and the orthographic projection of the repair electrode 13 on the plane of the substrate 10 overlap at least partially .
  • the protection electrode 117 extends from the light emitting region 1A to the repair region 1B, and a passivation layer 60 is disposed between the part of the protection electrode 117 located in the repair region 1B and the repair electrode 13 .
  • the protective electrode 117 is a conductive electrode
  • the thickness of the conductive layer between the repair electrode 13 and the extension part 121 is increased, thereby improving the dark spot repair of the display panel 300.
  • the welding probability between the repair electrode 13 and the anode 12 can be increased; in addition, since the protection electrode 117 and the repair electrode 13 are electrically connected through the source 115, the above setting will not affect the normal repair of the dark spot sub-pixel.
  • the orthographic projection of the protective electrode 117 on the plane of the substrate 10 completely overlaps the orthographic projection of the repair electrode 13 on the plane of the substrate 10, so as to further improve the The probability of welding between the extensions 121 of the anode 12 .
  • the fourth embodiment of the present application provides a display panel 400 .
  • the display panel 400 provided by the fourth embodiment of the present application is different from the third embodiment in that: the passivation layer 60 also has a connection hole 602 spaced apart from the contact hole 601, and the connection hole 602 is located between the protective electrode 117 and the repair electrode. In the overlapping area of the orthographic projection of the electrode 13 on the substrate 10 , the protection electrode 117 is connected to the repair electrode 13 through the connection hole 602 .
  • connection hole 602 is located in the repair area 1B, the connection hole 602 exposes the repair electrode 13 , and the protection electrode 117 extends into the connection hole 602 and is connected to the repair electrode 13 .
  • the above setting further increases the thickness of the conductive layer in the repair area 1B, and further increases the welding probability between the repair electrode 13 and the extension part 121 during the dark spot repair process of the display panel 400, thereby improving the reliability of the display panel 400. Dark spot repair success rate.
  • a fifth embodiment of the present application provides a display panel 500 .
  • the difference between the display panel 500 provided by the fifth embodiment of the present application and the first embodiment is that the display panel 500 also includes a passivation layer 60 and an auxiliary repair electrode 14, and the passivation layer 60 is arranged on the source electrode 115 away from the interlayer insulation.
  • the auxiliary repair electrode 14 is arranged between the passivation layer 60 and the planarization layer 40, and is located in the repair area 1B; the passivation layer 60 is provided with contact holes 601 and connection holes 602 arranged at intervals, the contact holes 601 is connected to the via hole 401, the anode 12 is connected to the source electrode 115 through the via hole 401 and the contact hole 601 in turn, the auxiliary repair electrode 14 is connected to the repair electrode 13 through the connection hole 602, and the auxiliary repair electrode 14 is located on the plane where the substrate 10 is located.
  • the projection at least partially overlaps with the orthographic projection of the repair electrode 13 on the plane where the substrate 10 is located.
  • connection hole 602 exposes the repair electrode 13
  • the auxiliary repair electrode 14 extends into the connection hole 602 and is connected to the repair electrode 13 .
  • the auxiliary repair electrode 14 is located above the repair electrode 13 and connected to the repair electrode 13.
  • the insulation layer between the repair electrode 13 of one sub-pixel 1 and the extension 121 of another sub-pixel 1 Thickness decreases. Therefore, in the process of repairing the dark spot of the display panel 500, the reduction of the thickness of the insulating layer can increase the probability of welding between the repair electrode 13 and the extension part 121, thereby greatly improving the success of the repair of the dark spot of the display panel 500. Rate.
  • the sixth embodiment of the present application provides a display panel 600 .
  • the display panel 600 provided by the fifth embodiment of the present application is different from the second embodiment in that: the display panel 600 also includes an auxiliary repair electrode 14, the auxiliary repair electrode 14 and the protective electrode 117 are arranged on the same layer and spaced apart, and the auxiliary repair electrode 14 Located in the repair area 1B, the orthographic projection of the auxiliary repair electrode 14 on the plane of the substrate 10 overlaps at least partially the orthographic projection of the repair electrode 13 on the plane of the substrate 10, and the passivation layer 60 is also provided with contact holes 601 at intervals.
  • the connection hole 602 , the auxiliary repair electrode 14 is connected to the repair electrode 13 through the connection hole 602 .
  • connection hole 602 exposes the repair electrode 13
  • the auxiliary repair electrode 14 extends into the connection hole 602 and is connected to the repair electrode 13 .
  • the auxiliary repair electrode 14 is located above the repair electrode 13 and connected to the repair electrode 13.
  • the insulation layer between the repair electrode 13 of one sub-pixel 1 and the extension 121 of another sub-pixel 1 Thickness decreases. Therefore, in the process of repairing the dark spot of the display panel 600, the reduction of the thickness of the insulating layer can increase the probability of welding between the repair electrode 13 and the extension part 121, thereby greatly improving the success of the repair of the dark spot of the display panel 600. Rate.
  • the auxiliary repair electrode 14 and the protection electrode 117 are arranged in the same layer, that is, both can be prepared under the same photomask, the arrangement of the auxiliary repair electrode 14 in this embodiment will not increase the process cost.
  • the orthographic projection of the auxiliary repair electrode 14 on the plane of the substrate 10 completely overlaps the orthographic projection of the repair electrode 13 on the plane of the substrate 10.
  • This setting can further increase the repair area of the repair area 1B where the dark spot sub-pixel is located, and is beneficial to The success rate of dark spot restoration of the display panel 600 is improved.
  • the seventh embodiment of the present application provides a display panel 700 .
  • the difference between the display panel 700 provided by the seventh embodiment of the present application and the first embodiment is that the display panel 700 further includes a passivation layer 60 and a protective electrode 117, and the passivation layer 60 is arranged on the source electrode 115 away from the interlayer insulating layer. 30, the protection electrode 117 is arranged between the passivation layer 60 and the planarization layer 40, and is located in the light-emitting region 1A.
  • a contact hole 601 connected to the via hole 401 is opened in the passivation layer 60, and the protection electrode 117 passes through the contact
  • the hole 601 is connected to the source electrode 115, and the anode 12 is connected to the protection electrode 117 through the via hole 401.
  • the repair electrode 13 of one sub-pixel 1 is set on the same layer as the protection electrode 117, and is connected from the protection electrode 117. One end extends toward the direction of the extension portion 121 of another sub-pixel 1 .
  • the contact hole 601 exposes the source electrode 115
  • the protection electrode 117 extends into the contact hole 601 and is connected to the source electrode 115
  • the via hole 401 exposes the protection electrode 117
  • the anode 12 extends into the via hole 401 and is connected to the protection electrode 117 .
  • the material of the protection electrode 117 may include one or more of molybdenum, titanium and indium tin oxide.
  • the source electrode 115 can be protected, preventing the metal material in the source electrode 115 from being oxidized, thereby improving the stability of the signal transmission of the source electrode 115. performance, so as to improve the driving performance of the thin film transistor 11.
  • the eighth embodiment of the present application provides a display panel 800 .
  • the display panel 800 also includes an auxiliary repair electrode 14, the auxiliary repair electrode 14 and the source electrode 115 are arranged on the same layer and spaced apart, and the auxiliary repair electrode 14 Located in the repair area 1B, the orthographic projection of the auxiliary repair electrode 14 on the plane of the substrate 10 overlaps at least partially the orthographic projection of the repair electrode 13 on the plane of the substrate 10, and the passivation layer 60 is provided with a connection with the contact hole 601 at intervals hole 602 , the auxiliary repair electrode 14 is connected to the repair electrode 13 through the connection hole 602 .
  • the auxiliary repair electrode 14 is exposed in the connection hole 602 , and the repair electrode 13 extends into the connection hole 602 and is connected to the auxiliary repair electrode 14 .
  • the auxiliary repair electrode 14 is arranged in the repair area 1B of the sub-pixel 1, and the auxiliary repair electrode 14 is located below the repair electrode 13 and connected to the repair electrode 13, thereby increasing the thickness of the conductive layer in the repair area 1B, which is beneficial
  • the welding probability between the repairing electrode 13 and the extension part 121 is increased to further improve the success rate of dark spot repairing of the display panel 800 .
  • auxiliary repair electrode 14 and the source electrode 115 are arranged in the same layer, that is, both can be prepared under the same photomask, therefore, the arrangement of the auxiliary repair electrode 14 in this embodiment will not increase the process cost.
  • the orthographic projection of the auxiliary repair electrode 14 on the plane of the substrate 10 completely overlaps the orthographic projection of the repair electrode 13 on the plane of the substrate 10.
  • This setting can further increase the repair area of the repair area 1B where the dark spot sub-pixel is located, so that it can further The success rate of dark spot restoration of the display panel 800 is improved.
  • the present application also provides a method for repairing a display panel as described in any one of the foregoing embodiments, which includes the following steps:
  • the method for repairing dark spots of the display panel 700 includes the following steps:
  • a laser laser process is used to laser the repair area 1B of the dark spot sub-pixel, so that the repair electrode 13 in the dark spot sub-pixel is fused with the anode 12 in the adjacent normal sub-pixel, because the repair electrode 13 in the dark spot sub-pixel passes through
  • the protection electrode 117 is connected to the anode 12, so when a voltage is applied to the anode 12 of the normal sub-pixel, the voltage applied on the anode 12 of the normal sub-pixel will be transmitted to the anode 12 of the dark sub-pixel through the repair electrode 13 and the protection electrode 117 in sequence In this way, the dark sub-pixels can be driven to emit light, so that the dark sub-pixels can be restored to normal sub-pixels.
  • the present application also provides a display panel, which includes a plurality of sub-pixels, each sub-pixel includes an active layer, a source, an anode and a repair electrode arranged on a substrate, and the source is arranged on the active layer Between the source layer and the anode, the repair electrode is connected to the source and is located on the side of the active layer close to the anode; wherein, for two adjacent sub-pixels, the repair electrode of one sub-pixel is connected to the anode of the other sub-pixel on the substrate The orthographic projections on are partially overlapped, and the repair electrode of one sub-pixel is connected to the anode of the other sub-pixel.
  • the above-mentioned display panel is a structure after repairing dark sub-pixels appearing in the display panel.
  • the structure of the repaired display panel provided by the present application will be described in detail below by taking the repaired structure of the display panel in the seventh embodiment described above when dark sub-pixels appear as an example.
  • the ninth embodiment of the present application provides a display panel 900 .
  • the difference between the display panel 900 provided by the ninth embodiment of the present application and the seventh embodiment is that: for two adjacent sub-pixels 1 with the same emission color, the repair electrode 13 of one sub-pixel 1 is different from that of the other sub-pixel 1.
  • the extension 121 is connected.
  • repair hole 402 there is a repair hole 402 in the planarization layer 40 , the repair hole 402 is located in the repair area 1B, and the extension part 121 extends into the repair hole 402 and is connected to the repair electrode 13 .
  • the present application also provides a display device, and the display device may be a display product such as a mobile phone, a tablet, a notebook computer, and a television.
  • the display device includes a casing and a display panel disposed in the casing, the display panel may be the display panel described in any of the foregoing embodiments, and the specific structure of the display panel may refer to the description of the foregoing embodiments , which will not be repeated here.

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Abstract

一种显示面板（700）及其修复方法。显示面板（700）包括多个子像素（1），每一子像素（1）包括设置在一衬底（10）上的有源层（112）、源极（115）、阳极（12）以及修复电极（13），源极（115）设置在有源层（112）与阳极（12）之间，修复电极（13）与源极（115）连接并位于有源层（112）靠近阳极（12）的一侧；对于相邻两个子像素（1），一个子像素（1）的修复电极（13）与另一个子像素（1）的阳极（12）在衬底（10）上的正投影部分重叠。

Description

显示面板及其修复方法 技术领域
本申请涉及显示技术领域，具体涉及一种显示面板及其修复方法。
 背景技术
在有机发光二极管（Organic Light-Emitting Diode, OLED）显示面板的生产过程中，受生产工艺或外部环境的影响，薄膜晶体管中会存在一些金属碎屑或异物等残留物，使得受该薄膜晶体管驱动的子像素成为暗点子像素，当暗点子像素超过一定数量时会造成面板报废，从而降低了显示面板的制造良率。
 技术问题
本申请实施例提供一种显示面板及其修复方法，能够在出现暗点子像素的情况下，对暗点子像素进行修复，以提高显示面板的制造良率。
 技术解决方案
本申请提供一种显示面板，所述显示面板包括多个子像素，每一所述子像素包括设置在一衬底上的有源层、源极、阳极以及修复电极，所述源极位于所述有源层与所述阳极之间，所述修复电极与所述源极连接，并位于所述有源层靠近所述阳极的一侧；
其中，对于相邻两个所述子像素，一个所述子像素的所述修复电极与另一个所述子像素的所述阳极在所述衬底上的正投影部分重叠，且一个所述子像素的修复电极与另一个所述子像素的所述阳极绝缘。
可选的，在本申请的一些实施例中，所述阳极具有一延伸部，在平行于所述衬底所在平面的方向上，对于相邻两个所述子像素，一个所述子像素的所述修复电极朝向另一个所述子像素的所述延伸部延伸，另一个所述子像素的所述延伸部朝向一个所述子像素的所述修复电极延伸，一个所述子像素的所述修复电极与另一个所述子像素的所述延伸部在所述衬底上的正投影重叠。
可选的，在本申请的一些实施例中，对于相邻两个所述子像素，一个所述子像素的所述修复电极与所述源极同层设置，并自所述源极的一端朝向另一个所述子像素的所述延伸部的方向延伸。
可选的，在本申请的一些实施例中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、保护电极以及平坦化层，所述钝化层中开设有接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
所述保护电极于所述衬底所在平面的正投影与所述修复电极于所述衬底所在平面的正投影至少部分重叠。
可选的，在本申请的一些实施例中，所述钝化层中还开设有与所述接触孔间隔设置的连接孔，所述连接孔位于所述保护电极和所述修复电极在所述衬底上的正投影的重叠区域，所述保护电极通过所述连接孔与所述修复电极连接。
可选的，在本申请的一些实施例中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、辅助修复电极以及平坦化层，所述辅助修复电极于所述衬底所在平面的正投影与所述修复电极于所述衬底所在平面的正投影至少部分重叠，所述钝化层中开设有连接孔，所述辅助修复电极通过所述连接孔与所述修复电极连接。
可选的，在本申请的一些实施例中，所述显示面板还包括保护电极，所述保护电极设置在所述钝化层与所述平坦化层之间，所述钝化层中还开设有与所述连接孔间隔设置的接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
所述辅助修复电极与所述保护电极同层且间隔设置。
可选的，在本申请的一些实施例中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、保护电极以及平坦化层，所述钝化层中开设有接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
对于相邻两个所述子像素，一个所述子像素的所述修复电极与所述保护电极同层设置，并自所述保护电极的一端朝向另一个所述子像素的所述延伸部的方向延伸。
可选的，在本申请的一些实施例中，所述显示面板还包括辅助修复电极，所述辅助修复电极与所述源极同层且间隔设置，所述辅助修复电极于所述衬底所在平面的正投影与所述修复电极于所述衬底所在平面的正投影至少部分重叠，所述钝化层中开设有与所述接触孔间隔设置的连接孔，所述辅助修复电极通过所述连接孔与所述修复电极连接。
可选的，在本申请的一些实施例中，所述相邻两个所述子像素的发光颜色相同。
本申请还提供一种如前述任一实施例所述的显示面板的修复方法，其包括以下步骤：
检测多个所述子像素中是否存在暗点子像素，若存在暗点子像素，将所述暗点子像素中的所述修复电极与相邻正常的所述子像素中的所述阳极进行熔接。
本申请还提供一种显示面板，所述显示面板包括多个子像素，每一所述子像素包括设置在一衬底上的有源层、源极、阳极以及修复电极，所述源极设置在所述有源层与所述阳极之间，所述修复电极与所述源极连接，并位于所述有源层靠近所述阳极的一侧；
其中，对于相邻两个所述子像素，一个所述子像素的所述修复电极与另一个所述子像素的所述阳极在所述衬底上的正投影部分重叠，且一个所述子像素的所述修复电极与另一个所述子像素的所述阳极连接。
可选的，在本申请的一些实施例中，所述阳极具有一延伸部，在平行于所述衬底所在平面的方向上，对于相邻两个所述子像素，一个所述子像素的所述修复电极朝向另一个所述子像素的所述延伸部延伸，另一个所述子像素的所述延伸部朝向一个所述子像素的所述修复电极延伸，一个所述子像素的所述修复电极与另一个所述子像素的所述延伸部在所述衬底上的正投影重叠。
可选的，在本申请的一些实施例中，对于相邻两个所述子像素，一个所述子像素的所述修复电极与所述源极同层设置，并自所述源极的一端朝向另一个所述子像素的所述延伸部的方向延伸。
可选的，在本申请的一些实施例中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、保护电极以及平坦化层，所述钝化层中开设有接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
所述保护电极于所述衬底所在平面的正投影与所述修复电极于所述衬底所在平面的正投影至少部分重叠。
可选的，在本申请的一些实施例中，所述钝化层中还开设有与所述接触孔间隔设置的连接孔，所述连接孔位于所述保护电极和所述修复电极在所述衬底上的正投影的重叠区域，所述保护电极通过所述连接孔与所述修复电极连接。
可选的，在本申请的一些实施例中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、辅助修复电极以及平坦化层，所述辅助修复电极于所述衬底所在平面的正投影与所述修复电极于所述衬底所在平面的正投影至少部分重叠，所述钝化层中开设有连接孔，所述辅助修复电极通过所述连接孔与所述修复电极连接。
可选的，在本申请的一些实施例中，所述显示面板还包括保护电极，所述保护电极设置在所述钝化层与所述平坦化层之间，所述钝化层中还开设有与所述连接孔间隔设置的接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
所述辅助修复电极与所述保护电极同层且间隔设置。
可选的，在本申请的一些实施例中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、保护电极以及平坦化层，所述钝化层中开设有接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
对于相邻两个所述子像素，一个所述子像素的所述修复电极与所述保护电极同层设置，并自所述保护电极的一端朝向另一个所述子像素的所述延伸部的方向延伸。
可选的，在本申请的一些实施例中，所述相邻两个所述子像素的发光颜色相同。
 有益效果
相较于现有技术中的显示面板，本申请提供的显示面板在每一子像素中设置修复电极，对于相邻两个子像素，一个子像素的修复电极与另一个子像素的阳极在衬底上的正投影部分重叠，当显示面板中出现暗点子像素时，通过对暗点子像素中的修复电极与相邻正常子像素中的阳极进行熔接，使得相邻子像素中的阳极能够驱动暗点子像素发光，进而可以将暗点子像素修复为正常子像素，从而提高了显示面板的制造良率。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请提供的显示面板的平面结构示意图。
图2是图1所示的显示面板沿剖面线O-O’的第一结构示意图。
图3是图1所示的显示面板沿剖面线O-O’的第二结构示意图。
图4是图1所示的显示面板沿剖面线O-O’的第三结构示意图。
图5是图1所示的显示面板沿剖面线O-O’的第四结构示意图。
图6是图1所示的显示面板沿剖面线O-O’的第五结构示意图。
图7是图1所示的显示面板沿剖面线O-O’的第六结构示意图。
图8是图1所示的显示面板沿剖面线O-O’的第七结构示意图。
图9是图1所示的显示面板沿剖面线O-O’的第八结构示意图。
图10是本申请提供的显示面板修复后的结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。
本申请提供一种显示面板及其修复方法、显示装置。以下分别进行详细说明。需要说明的是，在本申请的显示面板中，薄膜晶体管的源极和漏极是可以互换的。在本申请中，为区分薄膜晶体管除栅极之外的两极，将其中一极称为源极，另一极称为漏极。
本申请提供一种显示面板，所述显示面板包括多个子像素；每一子像素包括设置在一衬底上的有源层、源极、阳极以及修复电极；源极设置在有源层与阳极之间，修复电极与源极连接，并位于有源层靠近阳极的一侧；其中，对于相邻两个子像素，一个子像素的修复电极与另一个子像素的阳极在衬底上的正投影部分重叠，且一个子像素的修复电极与另一个子像素的阳极绝缘。
由此，本申请提供的显示面板在每一子像素中设置修复电极，对于相邻两个子像素，一个子像素的修复电极与另一个子像素的阳极在衬底上的正投影部分重叠，当显示面板中出现暗点子像素时，通过对暗点子像素中的修复电极与相邻正常子像素中的阳极进行熔接，使得相邻子像素中的阳极能够驱动暗点子像素发光，进而可以将暗点子像素修复为正常子像素，从而提高了显示面板的制造良率。
需要说明的是，在本申请中，区别于“暗点子像素”，所述“正常子像素”是指在薄膜晶体管驱动下能够正常发光的子像素。
下面通过具体实施例对本申请提供的显示面板进行详细的阐述。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。
请参照图1和图2，本申请第一实施例提供一种显示面板100。显示面板100包括多个子像素1。每一子像素1包括设置在一衬底10上的薄膜晶体管11、阳极12以及修复电极13。薄膜晶体管11包括遮光部111、有源层112、栅极绝缘层113、栅极114、源极115以及漏极116。源极115与阳极12相连。修复电极13与源极115相连。
在本实施例中，每一子像素1具有一发光区1A和位于发光区1A一侧的修复区1B。其中，在同一子像素1中，薄膜晶体管11和阳极12均位于发光区1A。修复电极13位于修复区1B。对于相邻两个子像素1，一个子像素1的修复区1B与另一个子像素1的发光区1A相邻，且另一个子像素1的发光区1A与一个子像素1的修复区1B具有交叠区域M，如图2所示。其中，修复区1B是指在显示面板100中出现暗点子像素时，对暗点子像素进行修复的区域。
进一步的，在本实施例中，显示面板100还包括缓冲层20、层间绝缘层30、平坦化层40以及像素定义层50。其中，缓冲层20、层间绝缘层30、平坦化层40以及像素定义层50均设置在发光区1A和修复区1B。
遮光部111设置在衬底10上。遮光部111可以为单层结构、双层结构或多层结构。具体的，遮光部111的材料可以包括钼、钛、铜和铝中的一种或多种。示例性地，当遮光部111为双层结构时，遮光部111可以包括以钛为遮光材料的底层和以铜为遮光材料的顶层，或者，遮光部111也可以包括以钼钛合金为遮光材料的底层和以铜为遮光材料的顶层。其中，遮光部111的厚度为500埃-2000埃，如可以为500埃、800埃、1000埃、1200埃、1500埃、1800埃或2000埃等。
缓冲层20设置在遮光部111远离衬底10的一侧。缓冲层20可以为单层结构、双层结构或多层结构。具体的，缓冲层20的材料可以包括氮化硅、氧化硅和氮氧化硅中的一种或多种。示例性地，当缓冲层20为双层结构时，缓冲层20可以包括以氧化硅为缓冲材料的底层和以氮化硅为缓冲材料的顶层。其中，缓冲层20的厚度可以为1000埃-5000埃，如可以为1000埃、1500埃、2000埃、2500埃、3000埃、3500埃、4000埃、4500埃或5000埃等。
有源层112设置在缓冲层20远离遮光部111的一侧。有源层112于衬底10所在平面的正投影位于遮光部111于衬底10所在平面的正投影内。有源层112包括沟道1121和位于沟道1121相对两侧的源极接触部1122和漏极接触部1123。其中，有源层112的材料可以包括IGZO、IGZTO、IGTO、IZTO和IZO中的一种或多种。
栅极绝缘层113设置在有源层112远离缓冲层20的一侧。自源极115朝向漏极116的方向，栅极绝缘层113的宽度略大于沟道1121的宽度。栅极绝缘层113可以为单层结构、双层结构或多层结构。具体的，栅极绝缘层113的材料可以包括氮化硅、氧化硅和氮氧化硅中的一种或多种。示例性地，当栅极绝缘层113为双层结构时，栅极绝缘层113可以包括以氧化硅为绝缘材料的底层和以氮化硅为绝缘材料的顶层。其中，栅极绝缘层113的厚度可以为500埃-2000埃，如可以为500埃、800埃、1000埃、1200埃、1500埃、1800埃或2000埃等。
栅极114设置在栅极绝缘层113远离有源层112的一侧。栅极114于衬底10所在平面的正投影与沟道1121于衬底10所在平面的正投影重叠。栅极114可以为单层结构、双层结构或多层结构。具体的，栅极114的材料可以包括钼、钛、铜和铝中的一种或多种，或者，栅极114的材料也可以包括由上述至少两种金属组成的合金。示例性地，当栅极114为双层结构时，栅极114可以包括以钼钛合金为导电材料的底层和以铜为导电材料的顶层。其中，栅极114的厚度为2000埃-8000埃，如可以为2000埃、3000埃、4000埃、5000埃、6000埃、7000埃或8000埃等。
层间绝缘层30设置在栅极114远离栅极绝缘层113的一侧。层间绝缘层30可以为单层结构、双层结构或多层结构。具体的，层间绝缘层30的材料可以包括氮化硅、氧化硅和氮氧化硅中的一种或多种。示例性地，当层间绝缘层30为双层结构时，层间绝缘层30可以包括以氧化硅为绝缘材料的底层和以氮化硅为绝缘材料的顶层。其中，层间绝缘层30的厚度可以为2000埃-10000埃，如可以为2000埃、3000埃、4000埃、5000埃、6000埃、7000埃、8000埃、9000埃或10000埃等。
源极115和漏极116设置在层间绝缘层30远离栅极114的一侧。源极115通过一过孔（图中未标识）与源极接触部1122连接。漏极116通过另一过孔（图中未标识）与漏极接触部1123连接。源极115和漏极116均可以为单层结构、双层结构或多层结构。具体的，源极115的材料和漏极116的材料相同，均可以包括钼、钛、铜和铝中的一种或多种，或者，也可以包括由上述至少两种金属组成的合金。示例性地，当源极115和漏极116均为双层结构时，源极115和漏极116均可以包括以钼钛合金为导电材料的底层和以铜为导电材料的顶层。其中，源极115的厚度和漏极116的厚度相同，均为2000埃-8000埃，如可以为2000埃、3000埃、4000埃、5000埃、6000埃、7000埃或8000埃等。
在本实施例中，修复电极13与源极115连接。在平行于衬底10所在平面的方向上，对于相邻两个子像素1，一个子像素1的修复电极13自源极115的一端朝向另一个子像素1的阳极12的方向延伸。其中，在平行于衬底10所在平面的方向上，对于相邻两个子像素1，一个子像素1的修复电极13的延伸方向与相邻的另一个子像素1的阳极12的延伸方向相反。
平坦化层40设置在源极115远离层间绝缘层30的一侧。平坦化层40中开设有过孔401。过孔401裸露出源极115。具体的，平坦化层40的材料可以为无机材料，所述无机材料可以包括氮化硅、氧化硅和氮氧化硅中的一种或多种；或者，平坦化层40的材料也可以为有机材料，所述有机材料可以包括有机树脂，如环氧树脂、丙烯酸类树脂等。其中，平坦化层40的厚度可以为1000埃-5000埃，如可以为1000埃、1500埃、2000埃、2500埃、3000埃、3500埃、4000埃、4500埃或5000埃等。
阳极12设置在平坦化层40远离源极115的一侧。阳极12延伸至过孔401内并与源极115连接。其中，阳极12可以为单层结构、双层结构或三层结构。阳极12的材料可以包括ITO、IZO、Ag、Pd、Cu、Al、Ni和La中的一种或多种。示例性地，阳极12可以为ITO/Ag/ITO的三层结构。
在本实施例中，对于相邻两个子像素1，一个子像素1的修复电极13与另一个子像素1的阳极12在衬底10上的正投影部分重叠，一个子像素1的修复电极13与另一个子像素1的阳极12绝缘。具体的，阳极12具有一延伸部121。在平行于衬底10所在平面的方向上，对于相邻两个子像素1，一个子像素1的延伸部121朝向另一个子像素1的修复电极13延伸，并位于另一个子像素1的修复区1B，一个子像素1的延伸部121与另一个子像素1的修复电极13在衬底10上的正投影重叠。
当显示面板100中出现暗点子像素时，在暗点子像素的修复区1B，可以采用激光镭射的方式将暗点子像素中的修复电极13与相邻的正常子像素的延伸部121进行熔接，从而能够通过正常子像素来驱动暗点子像素发光，以使暗点子像素修复成为正常子像素，以提高显示面板100的制造良率，进而能够提高显示面板100的显示品质。
进一步的，在本实施例中，每列相邻两个子像素1的发光颜色相同。在上述设置下，若显示面板100中出现暗点子像素，可以将暗点子像素中的修复电极13与相邻发光颜色相同且正常的子像素1的阳极12的延伸部121进行熔接，进而对于修复后的显示面板100，在正常显示条件下不会影响其显示效果，从而可以在修复暗点子像素的同时，保证显示面板100的显示质量。在一些实施例中，还可以将每行相邻两个子像素1的发光颜色设置为相同，本实施例的描述并不能理解为对本申请的限制。
需要说明的是，在一些实施例中，每列相邻两个子像素1也可以为发光颜色不同的子像素1，在此不再赘述。
需要说明的是，在本实施例中，显示面板100还包括发光层、阴极以及封装层（图中未示出），相关技术均为现有技术，在此不再赘述。
请参照图3，本申请第二实施例提供一种显示面板200。本申请第二实施例提供的显示面板200与第一实施例的不同之处在于：显示面板200还包括钝化层60和保护电极117，钝化层60设置在源极115远离层间绝缘层30的一侧，保护电极117设置在钝化层60与平坦化层40之间，并位于发光区1A，钝化层60中开设有连通于过孔401的接触孔601，保护电极117通过接触孔601与源极115连接，阳极12通过过孔401与保护电极117连接。
具体的，接触孔601裸露出源极115，保护电极117延伸至接触孔601内并与源极115连接。过孔401裸露出保护电极117，阳极12延伸至过孔401内并与保护电极117连接。保护电极117于衬底10所在平面的正投影位于源极115于衬底10所在平面的正投影内。其中，保护电极117的材料可以包括钼、钛和氧化铟锡中的一种或多种。
本实施例通过在源极115与阳极12接触的表面设置保护电极117，能够对源极115起到保护作用，避免源极115中的金属材料被氧化，从而可以提高源极115的信号传输稳定性，以提高薄膜晶体管11的驱动性能。
请参照图4，本申请第三实施例提供一种显示面板300。本申请第三实施例提供的显示面板300与第二实施例的不同之处在于：保护电极117于衬底10所在平面的正投影与修复电极13于衬底10所在平面的正投影至少部分重叠。
具体的，保护电极117自发光区1A延伸至修复区1B，且保护电极117位于修复区1B的部分与修复电极13之间设置有钝化层60。
由于保护电极117为导电电极，本实施例通过将保护电极117延伸至修复电极13上方，增加了修复电极13与延伸部121之间的导电层的厚度，进而在显示面板300的暗点化修复过程中，可以增加修复电极13与阳极12之间的熔接几率；另外，由于保护电极117与修复电极13通过源极115电连接，因此，上述设置并不会影响暗点子像素的正常修复。
在本实施例中，在子像素1的修复区1B，保护电极117于衬底10所在平面的正投影与修复电极13于衬底10所在平面的正投影完全重叠，以进一步提高修复电极13和阳极12的延伸部121之间的熔接几率。
请参照图5，本申请第四实施例提供一种显示面板400。本申请第四实施例提供的显示面板400与第三实施例的不同之处在于：钝化层60中还开设有与接触孔601间隔设置的连接孔602，连接孔602位于保护电极117和修复电极13在衬底10上的正投影的重叠区域，保护电极117通过连接孔602与修复电极13连接。
具体的，连接孔602位于修复区1B，连接孔602裸露出修复电极13，保护电极117延伸至连接孔602内并与修复电极13连接。上述设置进一步增加了修复区1B内导电层的厚度，进而在显示面板400的暗点化修复过程中，可以进一步增加修复电极13与延伸部121之间的熔接几率，从而能够提高显示面板400的暗点化修复成功率。
请参照图6，本申请第五实施例提供一种显示面板500。本申请第五实施例提供的显示面板500与第一实施例的不同之处在于：显示面板500还包括钝化层60和辅助修复电极14，钝化层60设置在源极115远离层间绝缘层30的一侧，辅助修复电极14设置在钝化层60与平坦化层40之间，并位于修复区1B；钝化层60中开设有间隔设置的接触孔601和连接孔602，接触孔601连通于过孔401，阳极12依次通过过孔401和接触孔601与源极115连接，辅助修复电极14通过连接孔602与修复电极13连接，辅助修复电极14于衬底10所在平面的正投影与修复电极13于衬底10所在平面的正投影至少部分重叠。
其中，连接孔602裸露出修复电极13，辅助修复电极14延伸至连接孔602内并与修复电极13连接。
本实施例通过在子像素1的修复区1B设置辅助修复电极14，辅助修复电极14位于修复电极13的上方并与修复电极13相连，对于相邻两个子像素1，由于一个子像素1的修复电极13与另一个子像素1的延伸部121之间仅间隔有一层平坦化层40，也即，一子像素1的修复电极13和另一个子像素1的延伸部121之间的绝缘层的厚度减小。由此，在显示面板500的暗点化修复过程中，上述绝缘层厚度的减小可以增加修复电极13和延伸部121之间的熔接几率，从而能够大大提高显示面板500的暗点化修复成功率。
请参照图7，本申请第六实施例提供一种显示面板600。本申请第五实施例提供的显示面板600与第二实施例的不同之处在于：显示面板600还包括辅助修复电极14，辅助修复电极14与保护电极117同层且间隔设置，辅助修复电极14位于修复区1B，辅助修复电极14于衬底10所在平面的正投影与修复电极13于衬底10所在平面的正投影至少部分重叠，钝化层60中还开设有与接触孔601间隔设置的连接孔602，辅助修复电极14通过连接孔602与修复电极13连接。
具体的，连接孔602裸露出修复电极13，辅助修复电极14延伸至连接孔602内并与修复电极13连接。
本实施例通过在子像素1的修复区1B设置辅助修复电极14，辅助修复电极14位于修复电极13的上方并与修复电极13相连，对于相邻两个子像素1，由于一个子像素1的修复电极13与另一个子像素1的延伸部121之间仅间隔有一层平坦化层40，也即，一子像素1的修复电极13和另一个子像素1的延伸部121之间的绝缘层的厚度减小。由此，在显示面板600的暗点化修复过程中，上述绝缘层厚度的减小可以增加修复电极13和延伸部121之间的熔接几率，从而能够大大提高显示面板600的暗点化修复成功率。
具体的，由于辅助修复电极14与保护电极117同层设置，即两者可以在同一道光罩下制备得到，因此，本实施例中辅助修复电极14的设置并不会增加工艺成本。
其中，辅助修复电极14于衬底10所在平面的正投影与修复电极13于衬底10所在平面的正投影完全重叠，该设置可以进一步提高暗点子像素所在修复区1B的修复面积，进而有利于提高显示面板600的暗点化修复成功率。
请参照图8，本申请第七实施例提供一种显示面板700。本申请第七实施例提供的显示面板700与第一实施例的不同之处在于：显示面板700还包括钝化层60和保护电极117，钝化层60设置在源极115远离层间绝缘层30的一侧，保护电极117设置在钝化层60与平坦化层40之间，并位于发光区1A，钝化层60中开设有连通于过孔401的接触孔601，保护电极117通过接触孔601与源极115连接，阳极12通过过孔401与保护电极117连接，对于相邻两个子像素1，一个子像素1的修复电极13与保护电极117同层设置，并自保护电极117的一端朝向另一个子像素1的延伸部121的方向延伸。
具体的，接触孔601裸露出源极115，保护电极117延伸至接触孔601内并与源极115连接。过孔401裸露出保护电极117，阳极12延伸至过孔401内并与保护电极117连接。其中，保护电极117的材料可以包括钼、钛和氧化铟锡中的一种或多种。
本实施例通过在源极115与阳极12接触的表面设置保护电极117，能够对源极115起到保护作用，避免源极115中的金属材料被氧化，从而可以提高源极115的信号传输稳定性，以提高薄膜晶体管11的驱动性能。
请参照图9，本申请第八实施例提供一种显示面板800。本申请第八实施例提供的显示面板800与第七实施例的不同之处在于：显示面板800还包括辅助修复电极14，辅助修复电极14与源极115同层且间隔设置，辅助修复电极14位于修复区1B，辅助修复电极14于衬底10所在平面的正投影与修复电极13于衬底10所在平面的正投影至少部分重叠，钝化层60中开设有与接触孔601间隔设置的连接孔602，辅助修复电极14通过连接孔602与修复电极13连接。
具体的，连接孔602裸露出辅助修复电极14，修复电极13延伸至连接孔602内并与辅助修复电极14连接。
本实施例通过在子像素1的修复区1B设置辅助修复电极14，且辅助修复电极14位于修复电极13的下方并与修复电极13相连，进而增加了修复区1B内导电层的厚度，有利于增加修复电极13和延伸部121之间的熔接几率，以进一步提高显示面板800的暗点化修复成功率。
具体的，由于辅助修复电极14与源极115同层设置，即两者可以在同一道光罩下制备得到，因此，本实施例中辅助修复电极14的设置并不会增加工艺成本。
其中，辅助修复电极14于衬底10所在平面的正投影与修复电极13于衬底10所在平面的正投影完全重叠，该设置可以进一步提高暗点子像素所在修复区1B的修复面积，从而能够进一步提高显示面板800的暗点化修复成功率。
本申请还提供一种如前述任一实施例所述的显示面板的修复方法，其包括以下步骤：
检测多个所述子像素中是否存在暗点子像素，若存在暗点子像素，将所述暗点子像素中的所述修复电极与相邻正常的所述子像素中的所述阳极进行熔接。
具体的，以前述第七实施例所述的显示面板700为例，结合图8，显示面板700的暗点化修复方法包括以下步骤：
在显示面板700的点灯测试阶段，检测显示面板700中是否存在暗点子像素；若存在暗点子像素，将暗点子像素中的修复电极13与相邻正常的子像素中的阳极12的延伸部121进行熔接。
具体的，采用激光镭射工艺对暗点子像素的修复区1B进行镭射，以使暗点子像素中的修复电极13与相邻正常子像素中的阳极12熔接，由于暗点子像素中的修复电极13通过保护电极117和阳极12连接，因此，当对正常子像素的阳极12施加电压时，正常子像素的阳极12上施加的电压会依次通过修复电极13和保护电极117传输至暗点子像素的阳极12中，进而能够驱动暗点子像素发光，由此，暗点子像素便修复为正常子像素。
需要说明的是，对于前述其他实施例的显示面板的修复方法，当显示面板中出现暗点子像素时，对暗点子像素的修复方法均可以参照本实施例的描述，在此不再赘述。
进一步的，本申请还提供一种显示面板，所述显示面板包括多个子像素，每一子像素包括设置在一衬底上的有源层、源极、阳极以及修复电极，源极设置在有源层与阳极之间，修复电极与源极连接，并位于有源层靠近阳极的一侧；其中，对于相邻两个子像素，一个子像素的修复电极与另一个子像素的阳极在衬底上的正投影部分重叠，且一个子像素的修复电极与另一个子像素的阳极连接。
需要说明的是，上述显示面板是对显示面板中出现的暗点子像素进行修复后的结构。下面以前述第七实施例的显示面板出现暗点子像素时修复后的结构为例，对本申请提供的修复后的显示面板的结构进行详细的阐述。
请参照图10，本申请第九实施例提供一种显示面板900。本申请第九实施例提供的显示面板900与第七实施例的不同之处在于：对于相邻两个发光颜色相同的子像素1，一个子像素1的修复电极13与另一个子像素1的延伸部121连接。
具体的，平坦化层40中具有一修复孔402，修复孔402位于修复区1B，延伸部121延伸至修复孔402内并与修复电极13连接。
需要说明的是，对于前述其他实施例，当显示面板中出现暗点子像素时，对暗点子像素修复后的结构均可以参照本实施例，在此不再赘述。
本申请还提供一种显示装置，所述显示装置可以为手机、平板、笔记本电脑、电视等显示产品。其中，所述显示装置包括壳体和设置在所述壳体中的显示面板，所述显示面板可以为前述任一实施例所述的显示面板，显示面板的具体结构可以参照前述实施例的描述，在此不再赘述。
以上对本申请实施例所提供的一种显示面板及其修复方法、显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种显示面板，其中，所述显示面板包括多个子像素，每一所述子像素包括设置在一衬底上的有源层、源极、阳极以及修复电极，所述源极位于所述有源层与所述阳极之间，所述修复电极与所述源极连接，并位于所述有源层靠近所述阳极的一侧；
    其中，对于相邻两个所述子像素，一个所述子像素的所述修复电极与另一个所述子像素的所述阳极在所述衬底上的正投影部分重叠，且一个所述子像素的修复电极与另一个所述子像素的所述阳极绝缘。
  2. 根据权利要求1所述的显示面板，其中，所述阳极具有一延伸部，在平行于所述衬底所在平面的方向上，对于相邻两个所述子像素，一个所述子像素的所述修复电极朝向另一个所述子像素的所述延伸部延伸，另一个所述子像素的所述延伸部朝向一个所述子像素的所述修复电极延伸，一个所述子像素的所述修复电极与另一个所述子像素的所述延伸部在所述衬底上的正投影重叠。
  3. 根据权利要求2所述的显示面板，其中，对于相邻两个所述子像素，一个所述子像素的所述修复电极与所述源极同层设置，并自所述源极的一端朝向另一个所述子像素的所述延伸部的方向延伸。
  4. 根据权利要求3所述的显示面板，其中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、保护电极以及平坦化层，所述钝化层中开设有接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
    所述保护电极于所述衬底所在平面的正投影与所述修复电极于所述衬底所在平面的正投影至少部分重叠。
  5. 根据权利要求4所述的显示面板，其中，所述钝化层中还开设有与所述接触孔间隔设置的连接孔，所述连接孔位于所述保护电极和所述修复电极在所述衬底上的正投影的重叠区域，所述保护电极通过所述连接孔与所述修复电极连接。
  6. 根据权利要求3所述的显示面板，其中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、辅助修复电极以及平坦化层，所述辅助修复电极于所述衬底所在平面的正投影与所述修复电极于所述衬底所在平面的正投影至少部分重叠，所述钝化层中开设有连接孔，所述辅助修复电极通过所述连接孔与所述修复电极连接。
  7. 根据权利要求6所述的显示面板，其中，所述显示面板还包括保护电极，所述保护电极设置在所述钝化层与所述平坦化层之间，所述钝化层中还开设有与所述连接孔间隔设置的接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
    所述辅助修复电极与所述保护电极同层且间隔设置。
  8. 根据权利要求2所述的显示面板，其中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、保护电极以及平坦化层，所述钝化层中开设有接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
    对于相邻两个所述子像素，一个所述子像素的所述修复电极与所述保护电极同层设置，并自所述保护电极的一端朝向另一个所述子像素的所述延伸部的方向延伸。
  9. 根据权利要求8所述的显示面板，其中，所述显示面板还包括辅助修复电极，所述辅助修复电极与所述源极同层且间隔设置，所述辅助修复电极于所述衬底所在平面的正投影与所述修复电极于所述衬底所在平面的正投影至少部分重叠，所述钝化层中开设有与所述接触孔间隔设置的连接孔，所述辅助修复电极通过所述连接孔与所述修复电极连接。
  10. 根据权利要求1所述的显示面板，其中，所述相邻两个所述子像素的发光颜色相同。
  11. 一种显示面板，其中，所述显示面板包括多个子像素，每一所述子像素包括设置在一衬底上的有源层、源极、阳极以及修复电极，所述源极设置在所述有源层与所述阳极之间，所述修复电极与所述源极连接，并位于所述有源层靠近所述阳极的一侧；
    其中，对于相邻两个所述子像素，一个所述子像素的所述修复电极与另一个所述子像素的所述阳极在所述衬底上的正投影部分重叠，且一个所述子像素的所述修复电极与另一个所述子像素的所述阳极连接。
  12. 根据权利要求11所述的显示面板，其中，所述阳极具有一延伸部，在平行于所述衬底所在平面的方向上，对于相邻两个所述子像素，一个所述子像素的所述修复电极朝向另一个所述子像素的所述延伸部延伸，另一个所述子像素的所述延伸部朝向一个所述子像素的所述修复电极延伸，一个所述子像素的所述修复电极与另一个所述子像素的所述延伸部在所述衬底上的正投影重叠。
  13. 根据权利要求12所述的显示面板，其中，对于相邻两个所述子像素，一个所述子像素的所述修复电极与所述源极同层设置，并自所述源极的一端朝向另一个所述子像素的所述延伸部的方向延伸。
  14. 根据权利要求13所述的显示面板，其中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、保护电极以及平坦化层，所述钝化层中开设有接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
    所述保护电极于所述衬底所在平面的正投影与所述修复电极于所述衬底所在平面的正投影至少部分重叠。
  15. 根据权利要求14所述的显示面板，其中，所述钝化层中还开设有与所述接触孔间隔设置的连接孔，所述连接孔位于所述保护电极和所述修复电极在所述衬底上的正投影的重叠区域，所述保护电极通过所述连接孔与所述修复电极连接。
  16. 根据权利要求13所述的显示面板，其中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、辅助修复电极以及平坦化层，所述辅助修复电极于所述衬底所在平面的正投影与所述修复电极于所述衬底所在平面的正投影至少部分重叠，所述钝化层中开设有连接孔，所述辅助修复电极通过所述连接孔与所述修复电极连接。
  17. 根据权利要求16所述的显示面板，其中，所述显示面板还包括保护电极，所述保护电极设置在所述钝化层与所述平坦化层之间，所述钝化层中还开设有与所述连接孔间隔设置的接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
    所述辅助修复电极与所述保护电极同层且间隔设置。
  18. 根据权利要求12所述的显示面板，其中，所述显示面板还包括依次设置在所述源极与所述阳极之间的钝化层、保护电极以及平坦化层，所述钝化层中开设有接触孔，所述保护电极通过所述接触孔与所述源极连接，所述平坦化层中开设有连通于所述接触孔的过孔，所述阳极通过所述过孔与所述保护电极连接；
    对于相邻两个所述子像素，一个所述子像素的所述修复电极与所述保护电极同层设置，并自所述保护电极的一端朝向另一个所述子像素的所述延伸部的方向延伸。
  19. 根据权利要求11所述的显示面板，其中，所述相邻两个所述子像素的发光颜色相同。
  20. 一种如权利要求1所述的显示面板的修复方法，其中，包括以下步骤：
    检测多个所述子像素中是否存在暗点子像素，若存在暗点子像素，将所述暗点子像素中的所述修复电极与相邻正常的所述子像素中的所述阳极进行熔接。
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