WO2023163480A1 - Appareil d'inspection utilisant des ondes térahertz - Google Patents

Appareil d'inspection utilisant des ondes térahertz Download PDF

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Publication number
WO2023163480A1
WO2023163480A1 PCT/KR2023/002443 KR2023002443W WO2023163480A1 WO 2023163480 A1 WO2023163480 A1 WO 2023163480A1 KR 2023002443 W KR2023002443 W KR 2023002443W WO 2023163480 A1 WO2023163480 A1 WO 2023163480A1
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WO
WIPO (PCT)
Prior art keywords
reflected
reflector
light source
unit
terahertz wave
Prior art date
Application number
PCT/KR2023/002443
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English (en)
Korean (ko)
Inventor
김장선
조수영
김이섭
고상주
김선재
박민우
안영환
Original Assignee
(주)팬옵틱스
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Publication date
Application filed by (주)팬옵틱스 filed Critical (주)팬옵틱스
Publication of WO2023163480A1 publication Critical patent/WO2023163480A1/fr

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8806Specially adapted optical and illumination features
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/08Mirrors

Definitions

  • the present invention relates to an apparatus for inspecting an object such as a semiconductor using terahertz waves.
  • a semiconductor chip is a core component required by computers, all electronic products, and information processing products, and performs arithmetic operations, information storage/transmission, and control of other chips.
  • the semiconductor chip may be implemented as a very miniaturized plastic packaging chip having a size of about 10X10mm 2 . Due to this, it is almost impossible for an inspector to visually identify defects such as cracks, peelings, and voids in packaged semiconductor chips.
  • a method using terahertz waves radiates terahertz electromagnetic waves to an object, and compares an electrical signal generated based on the terahertz electromagnetic waves reflected from the object with a reference signal to analyze the object.
  • An object of one embodiment of the present invention is to provide an apparatus for inspecting the structure or state of an object existing in a black box using terahertz waves.
  • a light source for irradiating a beam of a terahertz frequency band and a beam emitted from the light source are reflected to the object, and the object
  • the light reflected from the reflector for reflecting back toward the light source, the lens unit for focusing the beam reflected from the reflector to the object, the light receiver for receiving the beam reflected from the object, and analyzing the reflected beam received from the light receiver
  • a terahertz wave inspection device characterized in that it includes a control unit for controlling the operation.
  • the reflector is characterized in that implemented as a galvano mirror.
  • the inspection unit is characterized in that the conversion of the reflected beam received by the light receiving unit into a complex number dimension.
  • the inspection unit is characterized in that the amplitude function and phase function of the reflected beam is calculated using the reflected beam received by the light receiving unit and the reflected beam converted to a complex number dimension.
  • the inspection unit is characterized in that the structure or state of the object is inspected using the calculated phase function of the reflected beam.
  • the inspection unit is characterized in that to remove noise in the reflected beam signal.
  • the inspection unit is characterized in that the noise is removed by removing the phase information of the portion where the reflected beam signal does not exist.
  • the beam splitter is characterized in that it is disposed on the light path formed by the light source and the reflector.
  • the beam splitter is characterized in that the reflective surface is disposed toward the light receiving unit.
  • the structure or state of the object in that state using terahertz waves has the advantage of being able to inspect
  • FIG. 1 is a diagram showing the configuration of a terahertz wave inspection apparatus according to an embodiment of the present invention.
  • FIG. 2 is a diagram illustrating a state in which a path of a beam output by a reflector according to an embodiment of the present invention changes.
  • FIG. 3 is a diagram showing the configuration of an inspection unit according to an embodiment of the present invention.
  • FIG. 4 is a graph showing phase information of an object for recognizing an object by an object recognition unit according to an embodiment of the present invention.
  • first, second, A, and B may be used to describe various components, but the components should not be limited by the terms. These terms are only used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, a second element may be termed a first element, without departing from the scope of the present invention.
  • the terms and/or include any combination of a plurality of related recited items or any of a plurality of related recited items.
  • each configuration, process, process or method included in each embodiment of the present invention may be shared within a range that does not contradict each other technically.
  • FIG. 1 is a diagram showing the configuration of a terahertz wave inspection apparatus according to an embodiment of the present invention.
  • a terahertz wave inspection apparatus 100 includes a light source 110, a beam splitter 120, a reflector 130, a lens unit 140, a light receiving unit 160, It includes an inspection unit 170 and a control unit (not shown).
  • the terahertz wave inspection apparatus 100 irradiates a beam of a frequency band of terahertz (0.1 to several tens of THz) to an object, receives and analyzes a reflected beam reflected therefrom, and recognizes the structure or state of the object.
  • the terahertz wave inspection apparatus 100 extracts the amplitude and phase of the reflected beam, and recognizes the structure or state of the object from the extracted phase. Since the terahertz wave inspection apparatus 100 uses the phase of the reflected beam, even if the object is disposed in a black box or a separate (having a certain purpose) exterior material, even if the object is disposed in the exterior material, it is distinguished from the exterior material.
  • the structure or state of an object can be recognized.
  • the object to be inspected may be a semiconductor chip, but is not necessarily limited thereto, and may be replaced with any material that receives and reflects a beam of the terahertz frequency band.
  • the light source 110 radiates a terahertz frequency band beam to the reflector 130 .
  • the light source 110 generates a beam with a frequency of 0.1 to tens of terahertz (Hz) and a wavelength band of tens to hundreds of ⁇ m and irradiates the beam with the reflector 130 .
  • a beam irradiated onto an object is reflected to have a unique phase according to the structure or state of the object. Accordingly, the phase of the reflected beam may include information on the unique structure or state of the object.
  • the beam splitter 120 passes a beam traveling from the light source 110 to itself, but reflects a beam reflected from the reflector 130 and traveling towards itself.
  • the beam splitter 120 is disposed so that its reflective surface faces the light receiving unit 160 on the light path formed by the light source 110 and the reflector 130 . Accordingly, the beam splitter 120 passes the beam irradiated from the light source 110 to the reflector 130, and reflects the reflected beam reflected from the object and reflected from the reflector 130 to the light receiver 160.
  • the reflector 130 reflects a beam incident thereto at a predetermined angle.
  • the reflector 130 is disposed at a point of contact between the path between itself and the light source 110 and between itself and the object 155, and reflects a beam traveling on one path to the other path.
  • the reflector 130 reflects a beam irradiated from the light source 110 and incident to itself through the beam splitter 120 toward an object 155, and a beam reflected from the object 155 and incident to itself. is reflected toward the beam splitter 120.
  • the reflector 130 may adjust a reflection angle of an incident beam under the control of a controller (not shown). The operation of reflector 130 is shown in FIG. 2 .
  • FIG. 2 is a diagram illustrating a state in which a path of a beam output by a reflector according to an embodiment of the present invention changes.
  • the reflector 130 may adjust a reflection angle of an incident beam under the control of a controller (not shown). When the reflection angle of the reflector 130 is adjusted, a traveling path of a beam incident to the reflector 130 may be adjusted. 2a, the beam irradiated from the light source 110 by the reflector 130 may be irradiated to the center of the object 155, or may be irradiated to the end of the object 155 as shown in FIGS. 2b or 2c. In addition, the reflector 130 reflects the reflected beam reflected from the object 155 after being irradiated at the corresponding angle toward the beam splitter 120 .
  • the reflector 130 may adjust the angle of reflection under the control of a controller (not shown), so that beams may be incident to various positions of the object 155 .
  • the terahertz wave inspection apparatus 100 includes the reflector 130, so that the fixed object 155 can be scanned in two dimensions.
  • a conventional inspection device has been scanning while moving a cradle on which an object is mounted.
  • the terahertz wave inspection apparatus 100 includes a reflector 130 and adjusts an angle of the reflector 130 to perform two-dimensional scanning of an object without moving the cradle.
  • the reflector 130 may be implemented as a galvano mirror, but is not necessarily limited thereto, and may be replaced with anything as long as the reflection angle can be controlled.
  • the lens unit 140 focuses the beam reflected by the reflector 130 onto an object 155 .
  • the lens unit 140 is positioned between the reflector 130 and the light path of the object 155, and adjusts the path of the beam so that the beam reflected from the reflector 130 proceeds to the object 155 without being dispersed.
  • the lens unit 140 may be implemented as a single lens, but is not necessarily limited thereto, and may be implemented as a combination of a plurality of lenses.
  • the lens unit 140 may be implemented as an f- ⁇ lens or a collimator.
  • the light receiving unit 160 receives the reflected beam reflected from the target object 155 .
  • the light receiving unit 160 is implemented as an optical sensor and senses a reflected beam that is reflected from the object 155 and is incident thereon through the reflector 130 and the beam splitter 120 .
  • the inspecting unit 170 can recognize the structure or state of the object based on the sensed value.
  • the inspection unit 170 extracts phase information of the object from the reflected beam (sensing value) and inspects the structure or state of the object.
  • the inspection unit 170 converts the reflected beam into a complex dimension, and calculates the amplitude and phase of the reflected beam using the converted value.
  • the inspection unit 170 finally recognizes the structure or state of the object after removing the area where the object exists and the area where the object does not exist, that is, noise.
  • a specific configuration of the inspection unit 170 is shown in FIG. 3 .
  • FIG. 3 is a diagram showing the configuration of an inspection unit according to an embodiment of the present invention.
  • the inspection unit 170 includes a reflection beam conversion unit 310 , a noise removal unit 320 and an object recognition unit 330 .
  • the reflected beam conversion unit 310 converts the reflected beam into a complex number dimension.
  • a reflected beam sensed by the light receiver 160 corresponds to a real dimension.
  • the reflected beam conversion unit 310 goes through the following process and converts the real-dimensional reflected beam into a complex-numbered dimension.
  • the reflected beam conversion unit 310 converts the reflected beam into a complex number dimension based on the above equation, and obtains an amplitude function and a phase function of the reflected beam using the following equation.
  • A(t) is the amplitude function of the reflected beam
  • ⁇ (t) is the phase function of the reflected beam
  • f real (t) is the reflected beam in real dimension
  • f img (t) is the transformed complex dimension means reflected beam.
  • the reflected beam conversion unit 310 goes through the above process and calculates an amplitude function and a phase function of the reflected beam from the (real dimension) reflected beam sensed by the light receiving unit 160 .
  • the noise removal unit 320 removes noise by removing phase information of a portion where the reflected beam signal does not exist.
  • the noise removal unit removes noise as follows.
  • a function with an upper bar means a normalized function.
  • the phase function of the reflected beam is multiplied by the normalized amplitude function (of the reflected beam)
  • the phase function of the final reflected beam obtained by removing the phase information of the portion where the reflected beam signal does not exist is calculated as described above.
  • the object recognition unit 330 recognizes the object from the phase function finally calculated by the noise removal unit 320 .
  • the finally calculated phase function of the reflected beam is shown in FIG. 4 .
  • FIG. 4 is a graph showing phase information of an object for recognizing an object by an object recognition unit according to an embodiment of the present invention.
  • the object recognizing unit 330 calculates the remaining phase values as relative values of the reference based on the phase value of any one point from the finally calculated phase function.
  • point 410 is the top of the black box (eg, cover)
  • point 420 is the bottom of the black box
  • point 430 is the top (surface) of the object
  • point 440 is the top of the black box.
  • point 450 may indicate a void or other material generated in the object.
  • the object recognizing unit 330 uses a point in the phase function of the finally calculated reflected beam, for example, the topmost point 410 of the black box as a reference (for example, designates as ⁇ / 2),
  • the remaining points 420 to 450 may be expressed as relative values of the reference.
  • the object recognizing unit 330 does not need to calculate the absolute phase value of each point, so the calculation process can be significantly reduced.
  • the phase value is relatively small compared to the point 410. It is confirmed that there is no separate phase value because there is a blank between the points 420 and 430, and the phase value at the point 430 is relatively significantly higher because a relatively dense medium exists therefrom. Similarly, point 440 has a relatively small phase value compared to point 430 because it is implemented with a smaller medium.
  • the inspection unit 170 may determine whether the object 155 exists in the black box and what the structure or state of the object 155 is by using the phase function. Since scanning can be performed on all parts of the object by two-dimensional scanning of the reflector 130, the structure or state of all parts of the object 155 can be confirmed.
  • the inspection unit 170 may check whether a gap has occurred in the object 155 or whether a separate component such as an adhesive component such as epoxy is included using the phase function. For example, when points having different phase values, such as point 450, exist within the object 155, the inspection unit 170 may anticipate the above-described case. At this time, if the phase value is the same as the phase value between the point 420 (one end of the black box) and the point 430 (the surface of the object), the corresponding part corresponds to a gap. Conversely, if the phase value is different from points 430 and 440 and also different from the phase value between point 420 (one end of the black box) and point 430 (surface of the object), the corresponding part is a separate component within the object 155. (eg, adhesive composition such as epoxy).
  • adhesive composition such as epoxy
  • the inspection unit 170 can accurately grasp the structure or state of the object in the black box as it is without complicated calculation by using the phase function.
  • a controller (not shown) controls the operation of each component.
  • a controller (not shown) controls the light source 110 to emit a beam.
  • the controller (not shown) controls the reflector 130 to scan the object 155 in two dimensions.
  • the controller (not shown) controls the inspector 170 to check the structure or state of the object based on the value sensed by the light receiver 160 .

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Abstract

L'invention concerne un appareil d'inspection utilisant des ondes térahertz. Un aspect du présent mode de réalisation concerne un appareil d'inspection utilisant des ondes térahertz, qui est un appareil d'inspection permettant d'inspecter la structure ou l'état d'un objet dans une boîte noire, comprenant : une source de lumière qui irradie un faisceau d'une bande de fréquence térahertz ; un réflecteur qui renvoie le faisceau irradié par la source de lumière vers un objet, et qui renvoie la lumière réfléchie par l'objet vers la source de lumière ; une unité de lentille qui focalise le faisceau réfléchi par le réflecteur sur l'objet ; une unité de réception de lumière qui reçoit un faisceau réfléchi par l'objet ; une unité d'inspection qui analyse le faisceau réfléchi reçu de l'unité de réception de lumière et qui inspecte la structure ou l'état de l'objet ; un séparateur de faisceau qui transmet le faisceau irradié par la source de lumière et renvoie la lumière réfléchie par le réflecteur vers l'unité de réception de lumière après qu'elle ait été réfléchie par l'objet ; et une unité de commande qui commande les opérations de la source de lumière, du réflecteur et de l'unité d'inspection.
PCT/KR2023/002443 2022-02-22 2023-02-21 Appareil d'inspection utilisant des ondes térahertz WO2023163480A1 (fr)

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KR10-2022-0022916 2022-02-22
KR1020220022916A KR102638751B1 (ko) 2022-02-22 2022-02-22 테라헤르츠파를 이용한 검사장치

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007205926A (ja) * 2006-02-02 2007-08-16 Ricoh Co Ltd 表面欠陥検査装置、表面欠陥検査方法及び表面欠陥検査プログラム
WO2017203662A1 (fr) * 2016-05-26 2017-11-30 オリンパス株式会社 Appareil d'imagerie holographique numérique et procédé d'imagerie
KR20190118875A (ko) * 2018-04-11 2019-10-21 한양대학교 산학협력단 테라헤르츠파 기반 결함 측정 장치 및 방법
KR102043881B1 (ko) * 2017-10-30 2019-12-02 한국식품연구원 대면적 고속 물체 검사 장치
KR20210076598A (ko) * 2019-12-16 2021-06-24 (주)미래컴퍼니 테라헤르츠파를 이용한 검사 시스템

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007205926A (ja) * 2006-02-02 2007-08-16 Ricoh Co Ltd 表面欠陥検査装置、表面欠陥検査方法及び表面欠陥検査プログラム
WO2017203662A1 (fr) * 2016-05-26 2017-11-30 オリンパス株式会社 Appareil d'imagerie holographique numérique et procédé d'imagerie
KR102043881B1 (ko) * 2017-10-30 2019-12-02 한국식품연구원 대면적 고속 물체 검사 장치
KR20190118875A (ko) * 2018-04-11 2019-10-21 한양대학교 산학협력단 테라헤르츠파 기반 결함 측정 장치 및 방법
KR20210076598A (ko) * 2019-12-16 2021-06-24 (주)미래컴퍼니 테라헤르츠파를 이용한 검사 시스템

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KR20230125991A (ko) 2023-08-29

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