WO2023162181A1 - Modulateur optique en anneau - Google Patents

Modulateur optique en anneau Download PDF

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Publication number
WO2023162181A1
WO2023162181A1 PCT/JP2022/008049 JP2022008049W WO2023162181A1 WO 2023162181 A1 WO2023162181 A1 WO 2023162181A1 JP 2022008049 W JP2022008049 W JP 2022008049W WO 2023162181 A1 WO2023162181 A1 WO 2023162181A1
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WO
WIPO (PCT)
Prior art keywords
optical
coupling
ring
optical waveguide
waveguide
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PCT/JP2022/008049
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English (en)
Japanese (ja)
Inventor
百合子 川村
悠介 那須
雄一郎 伊熊
Original Assignee
日本電信電話株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to PCT/JP2022/008049 priority Critical patent/WO2023162181A1/fr
Publication of WO2023162181A1 publication Critical patent/WO2023162181A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure

Definitions

  • the present invention relates to an optical ring resonance modulator using an optical waveguide.
  • FIG. 1 is a diagram for explaining the principle of operation of an optical ring resonance modulator.
  • FIG. 1(a) shows the basic configuration of an optical ring resonance modulator.
  • the optical ring resonator type modulator is hereinafter referred to as an optical ring modulator.
  • the optical ring modulator 10 comprises a ring-shaped optical waveguide 2 having a phase modulation mechanism, and a bus optical waveguide 1 adjacent to the ring-shaped optical waveguide 2 and arranged so as to be optically coupled with the ring-shaped optical waveguide 2.
  • consists of A portion near the ring optical waveguide 2 and the bus optical waveguide 1 is called an optical coupling portion 3, and optical input or optical output occurs between the bus optical waveguide and the ring optical waveguide.
  • Continuous light 7 having a predetermined wavelength is input to the input side (left side of the figure) of the bus optical waveguide 1 .
  • a part of this continuous light 7 is coupled with the ring-shaped optical waveguide 2 at the optical coupling portion 3 and guided to the ring-shaped optical waveguide 2 .
  • the light guided to the ring-shaped optical waveguide 2 propagates counterclockwise as shown in FIG. output again.
  • the circuit length of the ring-shaped optical waveguide 2 is set so as to have a predetermined relationship with the wavelength of the continuous light 7 . That is, in the optical ring modulator 10, the structure such as the length, width and spacing of each optical waveguide is determined so that resonance occurs at a specific wavelength.
  • the level of the continuous light 7 input to the bus optical waveguide 1 decreases after passing through the optical coupling section 3 . Conversely, when the optical ring modulator 10 deviates from the resonance state, the continuous light 7 input to the bus optical waveguide 1 is output from the bus optical waveguide 1 without being attenuated. The level of the output light 8 from the bus optical waveguide 1 changes according to the resonance state of the light.
  • the optical ring modulator 10 Using this principle, if the phase of the winding portion of the ring-shaped optical waveguide 2 is modulated at high speed (several tens of GHz) by a modulating signal (for example, a data signal) to change the above-described resonance state, the optical ring modulator 10 , the amplitude of the input continuous light 7 can be modulated to ON/OFF.
  • a modulating signal for example, a data signal
  • optical ring modulators manufacturing errors in the waveguides and other components fabricated on the substrate caused large variations in the coupling degree of the optical coupling section and the optical propagation loss in the circular section. These variations degrade the extinction ratio of the optical ring modulator and degrade the basic performance of the modulator.
  • One embodiment of the present invention comprises a bus optical waveguide into which continuous light is input, a ring-shaped optical waveguide optically coupled with the bus optical waveguide and having a phase modulation section, a portion of the bus optical waveguide and the ring. and an optical coupling section including a part of an optical waveguide, wherein at least one of the bus optical waveguide and the ring optical waveguide in the optical coupling section includes a coupling degree variable mechanism. It is a vessel.
  • FIG. 3 is a diagram for explaining the configuration of an optical ring resonance modulator and the degree of coupling of an optical coupling section;
  • FIG. FIG. 4 is a diagram showing a specific configuration of a PN junction formed in a rib optical waveguide;
  • FIG. 10 is a diagram showing the configuration of an optical ring modulator and a cross section of an optical coupling portion according to Embodiment 2;
  • FIG. 10 is a diagram showing the configuration of an optical ring modulator according to Embodiment 3;
  • the optical ring modulator of the present disclosure includes a coupling degree variable mechanism in the optical coupling section.
  • the adjacent waveguide within the optical coupling section is provided with a PN junction.
  • a PN junction corresponds to a variable degree of coupling mechanism.
  • a bias voltage applied to the PN junction in the optocoupler can readjust the critical coupling state even after the chip is completed.
  • a heater can be provided in the vicinity of the waveguide of the optical coupling section.
  • the above modulation operation in the optical ring modulator 10 can be realized by changing the optical path length of the optical path of the ring optical waveguide 2 .
  • an electrode is formed on a part of the ring-shaped optical waveguide 2, and a signal voltage is applied to the electrode to change the optical path length of the ring-shaped optical waveguide by utilizing a mechanism such as refractive index modulation. be able to.
  • the input continuous light 7 is intensity-modulated
  • the modulated output light 8 is obtained from the bus optical waveguide 1 .
  • phase modulation section 5 A waveguide portion of the ring-shaped optical waveguide 2 to which a modulation signal voltage is applied is called a phase modulation section 5 .
  • the phase modulation section 5 can be realized by forming a PN junction in a waveguide made of a semiconductor and controlling the width of the depletion region by applying a voltage.
  • a change in the depletion region causes a change in the refractive index, changing the optical path length. Since the optical path length of the ring-shaped optical waveguide 2 is affected by temperature, it must be adjusted so that the optical path length is maintained even if the environmental temperature changes.
  • a phase adjusting section 4 for adjusting relatively slow variations in the optical path length may be provided.
  • This phase adjustment unit 4 can be realized by a PN junction, a heater, or the like.
  • the electrical signal applied to the phase modulation section 5 changes the resonance state of the ring-shaped optical waveguide, thereby changing the modulator loss between the input point and the output point of the bus optical waveguide 1.
  • the amplitude of the input continuous light 7 is turned ON/OFF. Therefore, the balance between the degree of coupling between the bus optical waveguide 1 and the ring optical waveguide 2 in the optical coupling portion 3 and the optical propagation loss in the circular portion of the ring optical waveguide greatly affects the ON/OFF characteristics of the optical modulator. .
  • FIG. 1(b) shows definitions of parameters that determine the transfer function in the optical ring modulator.
  • the parameters are as follows.
  • ⁇ R Propagation loss of ring optical waveguide
  • dB/mm ⁇ Propagation constant of ring-shaped optical waveguide
  • rad/mm L Ring-shaped optical waveguide length
  • mm ⁇ C coupler excess loss
  • dB the ratio of the input optical voltage E in and the output optical voltage E out of the bus optical waveguide 1, that is, the transfer function T is defined by the following equation.
  • Equation (1) the definitions of the parameters x, y, ⁇ , Ac are as follows.
  • x electric field transmittance of ring-shaped optical waveguide
  • y through-port electric field transmittance of coupler
  • ⁇ phase delay of ring-shaped optical waveguide
  • AC coupler electric field transmission coefficient
  • FIG. 2 shows the wavelength dependence of the transmittance
  • the optical ring modulator of the present disclosure has a coupling degree variable mechanism in at least one of the two optical waveguides of the optical coupling section 21 .
  • the coupling degree variable mechanism will be referred to as a "coupling degree adjusting unit" for simplicity.
  • a heater is provided near the rib waveguide to adjust the temperature of the rib waveguide, thereby changing the optical path length (phase) in the optical coupling section and adjusting the electric field transmittance y.
  • the degree of coupling of the optical coupling portion may be adjusted by providing PN junctions or heaters in both the ring-shaped optical waveguide 2 and the bus optical waveguide 1, or in either one of the optical waveguides.
  • the optical ring modulator of the present disclosure comprises a bus optical waveguide 1 into which continuous light is input, a ring-shaped optical waveguide 2 optically coupled with the bus optical waveguide and having a phase modulation section, and a part of the bus optical waveguide. and an optical coupling portion 21 including part of the ring-shaped optical waveguide, wherein at least one of the bus optical waveguide and the ring-shaped optical waveguide in the optical coupling portion includes coupling degree variable mechanisms 2b and 1b.
  • FIG. 3 is a diagram showing the configuration of the optical ring modulator of Embodiment 1.
  • FIG. 3(a) shows the basic configuration of the optical ring modulator 20, and is a schematic pattern view of the substrate surface. It has substantially the same configuration as the conventional optical ring modulator 10 shown in FIG. It has a bus optical waveguide 1 , a ring optical waveguide 2 , and an optical coupling section 21 . Similar to the optical ring modulator 10 of FIG. 1, the ring-shaped optical waveguide 2 also includes a phase modulation section 5 and a phase adjustment section 4 . The difference from the configuration of the prior art is that, as shown in the cross-sectional view taken along the line IIIb-IIIb' shown in FIG.
  • a PN junction is formed as a coupling adjustment portion.
  • the Si layer 23 on the SiO2 clad layer is processed into a rib waveguide and the whole is covered with an over clad layer 24.
  • adjacent P and N regions are doped to form PN junctions.
  • FIG. 4 is a diagram showing a specific configuration of a PN junction formed in a rib optical waveguide.
  • FIG. 4 shows a cross-section of the ring-shaped optical waveguide 2 in a direction perpendicular to the light guiding direction, taking as an example the case where the ring-shaped optical waveguide 2 is fabricated on a Si substrate.
  • the ring-shaped optical waveguide 2 of FIG. 1 comprises a SiO 2 cladding layer 110 , a Si layer 120 formed on the SiO 2 cladding layer 110 , and a SiO 2 cladding layer 130 formed on the Si layer 120 .
  • the Si layer 120 has a rib waveguide structure with a difference in thickness for confining light. 103. Light propagating in the direction perpendicular to the cross section of FIG .
  • the end portion of the slab portion 102 opposite to the rib portion 101 is a high-concentration p-type semiconductor region 123
  • the end portion of the slab portion 103 opposite to the rib portion 101 is a high-concentration n region. type semiconductor region 124 .
  • the rib portion 101 side of the slab portion 102 and the slab portion 102 side of the rib portion 101 are medium concentration p-type semiconductor regions 121 .
  • the rib portion 101 side of the slab portion 103 and the slab portion 103 side of the rib portion 101 are intermediate concentration n-type semiconductor regions 122 .
  • the rib portion 101 has a PN junction structure in which the medium concentration p-type semiconductor region 121 and the medium concentration n-type semiconductor region 122 are in contact with each other.
  • a pin junction structure in which an i-type (intrinsic) semiconductor region is sandwiched between the medium concentration p-type semiconductor region 121 and the medium concentration n-type semiconductor region 122 may be employed.
  • a metal electrode in contact with the high-concentration p-type semiconductor region 123 and a metal electrode in contact with the high-concentration n-type semiconductor region 124 are provided. left).
  • the reverse bias electric field changes the carrier density inside the core layer of the waveguide 2 (carrier plasma effect), changes the refractive index of the optical waveguide, modulates the phase of light, and adjusts the degree of coupling of the optical coupling section 21. be able to.
  • the PN junction in the rib waveguide described above is used not only in the coupling degree adjusting section for adjusting the electric field transmittance y of the optical coupling section 21, but also in the phase modulating section 5 and the phase adjusting section 4 as it is.
  • Phase modulation is performed by superimposing the modulation signal of . Since the PN junction is a process that is originally necessary for manufacturing the optical ring modulator, even if the coupling degree adjustment section is provided in the optical coupling section 21 of the optical ring modulator of the present disclosure, no new process is required. There are advantages.
  • continuous light is input from the left side of the bus optical waveguide 1 on the drawing, and modulated light is output from the right side.
  • the wavelength of light propagating through the bus optical waveguide 1, the optical path length of the ring optical waveguide 2, and the distance between the bus optical waveguide 1 and the ring optical waveguide 2 satisfy a predetermined relationship, and the optical coupling section 21 is a directional coupler. constitutes The above values of the waveguide are set so that the critical coupling state is achieved at a predetermined wavelength.
  • the reverse bias voltage applied here includes a DC voltage for coping with manufacturing variations and a low-frequency signal component for coping with slow fluctuations such as deviation from the critical coupling state due to temperature changes.
  • the data signal of the modulation signal is applied to the phase modulation section 5, and the resonance state of the ring-shaped optical waveguide 2 is changed according to the data signal to turn ON/OFF. OFF modulation is performed.
  • a change in the resonance state of the ring-shaped optical waveguide 2 is caused by changing the reverse bias voltage to the PN junction in the phase modulating section 5 with a data signal and modulating the optical waveguide refractive index of the phase modulating section 5 . If the reverse bias voltage of the PN junction is changed, not only the refractive index of the ring-shaped optical waveguide but also the loss of the optical waveguide will change.
  • the optical coupling section 21 is also provided with a PN junction as a coupling degree adjustment section. Therefore, by inputting a correction signal synchronized with the data signal to the PN junction of the optical coupling section 21, it is possible to compensate for the fluctuation of the waveguide loss of the ring-shaped optical waveguide caused by the above-described modulation operation by the data signal.
  • a high-frequency correction signal synchronized with the data signal can be superimposed on the low-frequency component reverse bias voltage for coping with the above-described manufacturing variations.
  • This high-frequency correction signal may be applied to one of the PN junctions of the rib waveguides 2b and 1b in the optical coupling section 21 of FIG. 3, or may be applied to both PN junctions at the same time. Therefore, in the cross-sectional view perpendicular to the waveguide length direction in FIG. 3B, the PN junction may be formed only in one of the optical waveguides.
  • FIG. 5 is a diagram showing the configuration of the optical ring modulator of the second embodiment.
  • FIG. 5(a) shows the basic configuration of the optical ring modulator 30, which is a schematic pattern view of the substrate surface. It has substantially the same configuration as the conventional optical ring modulator 10 shown in FIG. It has a bus optical waveguide 1 , a ring optical waveguide 2 , and an optical coupling section 31 . Similar to the optical ring modulator 10 shown in FIG. 1, the ring-shaped optical waveguide 2 also includes a phase modulation section 5 and a phase adjustment section 4 .
  • the ring-shaped optical waveguide 2b in the optical coupling portion 31 and the bus optical waveguide 2b are different from the conventional configuration.
  • the difference is that a heater is formed as a coupling degree adjusting portion in the vicinity of the wave path 1b. That is, in the second embodiment, the heater corresponds to the coupling degree variable mechanism.
  • FIG. 5(b) shows an example in which heaters 32-1 and 32-2 are formed on the upper clad.
  • the heater can be implemented as a constant length of resistor arranged in parallel along the rib waveguide. Since the heater changes the temperature of the waveguide and changes the phase of the waveguide, the coupling length of the directional coupler changes.
  • the electric field transmission coefficient y of the light coupled from the input section to the ring-shaped waveguide changes due to the temperature adjustment by the heater.
  • FIG. 5(c) shows an example in which doped regions 33-1 and 33-2 are provided in the vicinity of the rib waveguide as resistors, and a heater is realized by energizing these resistors.
  • the degree of coupling is adjusted using a temperature change by a heater or the like, and the heater or the like applies heat to the waveguide to cause a refractive index change. Therefore, it should be noted that unless the ring-shaped optical waveguide is completely insulated, the heat will also be transmitted to the ring-shaped optical waveguide and cause a phase change. It should be noted that crosstalk unintentionally changes the phase of the ring-shaped optical waveguide of the optical ring modulator as compared to the first embodiment using the PN junction.
  • FIG. 6 is a diagram showing the configuration of an optical ring modulator according to the third embodiment.
  • a coupling degree adjuster 42 as a coupling degree variable mechanism is provided in the bus optical waveguide 1 between the first optical coupling portion 41-1 and the second optical coupling portion 41-2.
  • the coupling degree adjustment unit 42 can include the PN junction described in the first embodiment and the heater described in the second embodiment. Therefore, in Embodiment 3, the PN junction or the heater corresponds to the variable coupling mechanism.
  • the phase of one arm waveguide of the Mach-Zehnder interferometer is changed by adjusting the bias voltage to the PN junction of the coupling degree adjusting section 42 and the heater driving voltage. By adjusting these voltages, the electric field transmission coefficient y of light coupled from the second optical coupling section 41-2 to the ring-shaped waveguide changes.
  • the optical ring modulator provided with the coupling degree variable mechanism of the present disclosure when using a PN junction, it can be realized with an optical waveguide made of silicon or a compound semiconductor. Further, when the heater structure is used in the coupling degree variable mechanism of Embodiments 2 and 3, in addition to waveguides of silicon and compound semiconductors, optical waveguides of organic materials and quartz glass can be used.
  • the optical ring modulator of the present disclosure eliminates variations in the degree of coupling in the optical coupling portion due to manufacturing errors in the waveguide shape and deviations in the profile of the PN junction, thereby achieving the large extinction ratio required for the optical modulator. It can be stably realized with a small signal voltage.
  • the present invention can be used in devices for optical communication.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

Un modulateur optique en anneau selon la présente divulgation est pourvu d'un mécanisme de variation de degré de couplage dans une partie de couplage optique. Dans un exemple, en plus d'une partie de modulation de phase et d'une partie de réglage de phase à l'intérieur d'un guide d'ondes optique en forme d'anneau, une jonction P-N est disposée dans un guide d'ondes adjacent à l'intérieur de la partie de couplage optique. Une tension de polarisation appliquée à la jonction PN dans la partie de couplage optique peut compenser directement des variations du degré de couplage de la partie de couplage optique, et même après l'achèvement d'une puce, peut ajuster le degré de couplage à un état dans lequel un couplage critique est possible. En synchronisation avec un signal de modulation appliqué à la partie de modulation de phase, un signal haute fréquence pour compenser des variations de perte de modulateur provoquée par une opération de modulation est superposé sur la tension de polarisation, ce qui permet de stabiliser le rapport d'extinction du modulateur optique en anneau. Dans un autre exemple du mécanisme de variation de degré de couplage, il est également possible de fournir un dispositif de chauffage au voisinage du guide d'ondes optique de la partie de couplage optique.
PCT/JP2022/008049 2022-02-25 2022-02-25 Modulateur optique en anneau WO2023162181A1 (fr)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0527273A (ja) * 1991-07-24 1993-02-05 Mitsubishi Electric Corp 方向性結合器
US20060056760A1 (en) * 2004-09-16 2006-03-16 Djordjev Kostadin D Gain-assisted electroabsorption modulators
WO2013051095A1 (fr) * 2011-10-03 2013-04-11 富士通株式会社 Élément semi-conducteur optique, ainsi que procédé de commande et de fabrication de celui-ci
US20170276873A1 (en) * 2014-12-11 2017-09-28 Huawei Technologies Co., Ltd. Micro-ring resonator
JP2018511820A (ja) * 2015-03-12 2018-04-26 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 電気光学および熱光学変調器
WO2019225445A1 (fr) * 2018-05-21 2019-11-28 学校法人慶應義塾 Dispositif optique utilisant un matériau nanocarbone
WO2021043827A1 (fr) * 2019-09-02 2021-03-11 Technische Universiteit Eindhoven Laser en anneau accordable de façon électro-optique inp intégré de manière monolithique, dispositif laser ainsi qu'un procédé correspondant

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0527273A (ja) * 1991-07-24 1993-02-05 Mitsubishi Electric Corp 方向性結合器
US20060056760A1 (en) * 2004-09-16 2006-03-16 Djordjev Kostadin D Gain-assisted electroabsorption modulators
WO2013051095A1 (fr) * 2011-10-03 2013-04-11 富士通株式会社 Élément semi-conducteur optique, ainsi que procédé de commande et de fabrication de celui-ci
US20170276873A1 (en) * 2014-12-11 2017-09-28 Huawei Technologies Co., Ltd. Micro-ring resonator
JP2018511820A (ja) * 2015-03-12 2018-04-26 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 電気光学および熱光学変調器
WO2019225445A1 (fr) * 2018-05-21 2019-11-28 学校法人慶應義塾 Dispositif optique utilisant un matériau nanocarbone
WO2021043827A1 (fr) * 2019-09-02 2021-03-11 Technische Universiteit Eindhoven Laser en anneau accordable de façon électro-optique inp intégré de manière monolithique, dispositif laser ainsi qu'un procédé correspondant

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