WO2023157900A1 - Unité de sonde, dispositif d'inspection, système d'inspection, procédé d'inspection et procédé de fabrication de dispositif laser à semi-conducteur - Google Patents

Unité de sonde, dispositif d'inspection, système d'inspection, procédé d'inspection et procédé de fabrication de dispositif laser à semi-conducteur Download PDF

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Publication number
WO2023157900A1
WO2023157900A1 PCT/JP2023/005373 JP2023005373W WO2023157900A1 WO 2023157900 A1 WO2023157900 A1 WO 2023157900A1 JP 2023005373 W JP2023005373 W JP 2023005373W WO 2023157900 A1 WO2023157900 A1 WO 2023157900A1
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WIPO (PCT)
Prior art keywords
probe
inspection
electrode
unit
stage
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PCT/JP2023/005373
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English (en)
Japanese (ja)
Inventor
佳和 田村
幸典 山下
忍 駿河
茂生 林
Original Assignee
ヌヴォトンテクノロジージャパン株式会社
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Publication of WO2023157900A1 publication Critical patent/WO2023157900A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer

Definitions

  • the present disclosure relates to a probe unit, an inspection device, an inspection system, an inspection method, and a method of manufacturing a semiconductor laser device.
  • Patent Document 1 there is an inspection apparatus that inspects the characteristics of an inspection target by supplying current to the inspection target using a plurality of probes (see, for example, Patent Document 1).
  • the probe supported by the support since the probe supported by the support has an elastic restoring force, when the support is moved toward the inspection object, the probe in contact with the inspection object is deformed. , it is possible to suppress the application of excessive force from the probe to the inspection object. Therefore, it is possible to suppress the inspection object from being damaged during the inspection.
  • the present disclosure is intended to solve such problems, and aims to provide a probe unit and the like that can reduce damage during inspection of an inspection target.
  • one aspect of the probe unit is a probe unit including a part of a current circuit for supplying a current to a test object, wherein the current circuit includes an elastic restoring force.
  • a first probe and a second probe having a force; a probe fixing member to which the first probe and the second probe are fixed; arranged below the probe fixing member and spaced from the probe fixing member; a probe-penetrating member having a first through-hole and a second through-hole through which the first probe and the second probe pass, respectively;
  • a portion of the first probe and the second probe that penetrates and has a facing surface facing the object to be inspected, and a portion of the first probe and the second probe that protrudes downward from the facing surface is movable in a vertical direction, and the first probe And in a state in which the second probe is not in contact with the inspection object, the lower end of the first probe is located below the lower end of the second probe.
  • one aspect of the inspection apparatus includes the probe unit, a stage having a mounting surface on which the inspection target is mounted, and a stage between the probe unit and the stage. and a height adjusting member disposed on the facing surface of the probe unit.
  • one aspect of the inspection system includes the inspection device and a transport device that transports the inspection device, and the first probe and the second probe are placed on the inspection object.
  • the inspection device is conveyed in a contact state.
  • one aspect of an inspection method is an inspection method for inspecting characteristics of an inspection object by supplying a current to the inspection object, wherein the inspection object faces the upper surface. and a device having a device top surface, the device being disposed on the top surface of the submount and supplied with the current, the submount having a first electrode disposed on the top surface.
  • the device has a second electrode disposed on the upper surface of the device
  • the inspection method includes a first contacting step of bringing a first probe into contact with the first electrode, and after the first contacting step, the a second contacting step of contacting a second probe with the second electrode while the first probe is in contact with the first electrode, wherein the first probe and the second probe are attached to the test object; It is included in a current circuit that supplies current and has elastic restoring force.
  • another aspect of the inspection method according to the present disclosure is an inspection method for inspecting characteristics of an inspection object by supplying a current to the inspection object, the inspection object: a submount having an upper surface; and an element having an element upper surface, disposed on the upper surface of the submount and supplied with the current, the submount having a first electrode disposed on the upper surface.
  • the device has a second electrode disposed on the upper surface of the device
  • the inspection method includes contacting a first probe with the first electrode and contacting a second probe with the second electrode a supply step of supplying the current to the test object in a state where the and a first detachment step of detaching the first probe from the first electrode, wherein the first probe and the second probe are included in a current circuit that supplies the current to the test object, and elastic restoring force have
  • one aspect of a method for manufacturing a semiconductor laser device is a method for manufacturing a semiconductor laser device, comprising: an assembly process for assembling the semiconductor laser device; and an inspection step of inspecting the semiconductor laser device as the inspection object, wherein the device is a semiconductor laser device.
  • FIG. 1 is a schematic side view showing the overall configuration of an inspection apparatus according to Embodiment 1;
  • FIG. 2 is a schematic top view showing the configuration of the probe unit according to Embodiment 1;
  • FIG. 2 is a schematic first cross-sectional view showing the configuration of the probe unit according to Embodiment 1;
  • FIG. 4 is a schematic second cross-sectional view showing the configuration of the probe unit according to Embodiment 1.
  • FIG. 4 is a schematic cross-sectional view showing the shape of the first probe in a state where the lower end of the first probe according to Embodiment 1 does not receive an upward force;
  • FIG. 5 is a schematic cross-sectional view showing the shape of the first probe in a state where the lower end of the first probe according to Embodiment 1 receives an upward force;
  • FIG. 4 is a schematic side view explaining each step of the inspection method according to Embodiment 1;
  • FIG. 4 is a schematic side view explaining each step of the inspection method according to Embodiment 1;
  • FIG. 4A is a schematic top view showing each step of a first position adjustment method for an inspection object in the inspection method according to the first embodiment;
  • FIG. 4A is a schematic top view showing each step of a first position adjustment method for an inspection object in the inspection method according to the first embodiment;
  • FIG. 4A is a schematic top view showing each step of a first position adjustment method for an inspection object in the inspection method according to the first embodiment;
  • FIG. 4A is a schematic top view showing each step of a first position adjustment method for an inspection object in the inspection method according to the first embodiment
  • FIG. 4A is a schematic top view showing each step of a first position adjustment method for an inspection object in the inspection method according to the first embodiment
  • FIG. 10 is a schematic top view showing each step of a second position adjustment method for the inspection target in the inspection method according to the first embodiment
  • FIG. 10 is a schematic top view showing each step of a second position adjustment method for the inspection target in the inspection method according to the first embodiment
  • FIG. 10 is a schematic top view showing each step of a second position adjustment method for the inspection target in the inspection method according to the first embodiment
  • FIG. 10 is a schematic top view showing each step of a second position adjustment method for the inspection target in the inspection method according to the first embodiment
  • FIG. 10 is a schematic top view showing each step of a second position adjustment method for the inspection target in the inspection method according to the first embodiment;
  • FIG. 4 is a schematic side view explaining each step of the inspection method according to Embodiment 1;
  • FIG. 4 is a schematic side view explaining each step of the inspection method according to Embodiment 1;
  • FIG. 4 is a schematic side view explaining each step of the inspection method according to Embodiment 1;
  • FIG. 4 is a schematic side view explaining each step of the inspection method according to Embodiment 1;
  • FIG. 4 is a schematic side view explaining each step of the inspection method according to Embodiment 1;
  • 4A and 4B are schematic cross-sectional views for explaining the operation of the probe unit according to Embodiment 1;
  • FIG. 4A and 4B are schematic cross-sectional views for explaining the operation of the probe unit according to Embodiment 1;
  • FIG. 4A and 4B are schematic cross-sectional views for explaining the operation of the probe unit according to Embodiment 1;
  • FIG. 4A and 4B are schematic cross-sectional views for explaining the operation of the probe unit according to Embodiment 1;
  • FIG. 4A and 4B are schematic cross-sectional views for explaining the operation of the probe unit according to Embodiment 1;
  • FIG. 4A and 4B are schematic cross-sectional views for explaining the operation of the probe unit according to Embodiment 1;
  • FIG. 4A and 4B are schematic cross-sectional views for explaining the operation of the probe unit according to Embodiment 1;
  • FIG. FIG. FIG. 1 are schematic cross-sectional views for explaining the operation of the probe unit according to Embodiment 1;
  • FIG. 5 is a schematic diagram showing the positional relationship between the first probe and the first through-hole when the first probe according to Embodiment 1 does not exhibit a buckling phenomenon;
  • FIG. 5 is a schematic diagram showing the positional relationship between the first probe and the first through-hole when the first probe according to Embodiment 1 exhibits a buckling phenomenon;
  • 1 is a schematic top view showing the overall configuration of an inspection system according to Embodiment 1;
  • FIG. FIG. 4 is a schematic top view showing the overall configuration of an inspection system according to a modification of Embodiment 1; 4 is a flow chart showing the flow of the method for manufacturing the semiconductor laser device according to Embodiment 1;
  • FIG. 5 is a schematic cross-sectional view showing part of a probe unit according to Modification 1;
  • FIG. 11 is a schematic cross-sectional view showing part of a probe unit according to Modification 2;
  • FIG. 11 is a schematic cross-sectional view showing part of a probe unit according to Modification 3;
  • FIG. 11 is a schematic cross-sectional view showing part of a probe unit according to Modification 4;
  • FIG. 11 is a schematic top view showing a part of a probe penetrating member of a probe unit according to modification 5;
  • FIG. 11 is a schematic top view showing a part of a probe penetrating member of a probe unit according to modification 6;
  • FIG. 21 is a schematic cross-sectional view showing part of a probe unit according to Modification 7;
  • FIG. 21 is a schematic side view showing the configuration of each probe of the probe unit according to modification 8;
  • FIG. 21 is a schematic side view showing the configuration of each probe of the probe unit according to modification 8;
  • FIG. 21 is a schematic side view showing the configuration of each probe of the probe unit according to modification 8;
  • FIG. 21 is a schematic cross-sectional view showing part of a probe unit according to Modification 9;
  • FIG. 21 is a schematic cross-sectional view showing part of a probe unit according to Modification 10;
  • 4 is a schematic perspective view showing a first example of a penetrating member inclined surface and a stage inclined surface according to Embodiment 1.
  • FIG. FIG. 4 is a schematic cross-sectional view showing a first example of a penetrating member inclined surface and a stage inclined surface according to Embodiment 1;
  • FIG. 8 is a schematic top view showing the configuration of a probe unit according to Embodiment 2;
  • FIG. 8 is a schematic cross-sectional view showing the configuration of a probe unit according to Embodiment 2;
  • FIG. 8 is a schematic cross-sectional view showing a state in which a height adjustment member arranged in the probe unit according to Embodiment 2 is brought into contact with the stage;
  • FIG. 11 is a schematic cross-sectional view showing the configuration of a probe unit according to Embodiment 3;
  • FIG. 12 is a schematic cross-sectional view showing a state in which the unit contact surface of the height adjustment member arranged on the stage according to Embodiment 3 is brought into contact with the probe unit;
  • FIG. 11 is a schematic cross-sectional view showing the configuration of a probe unit according to Embodiment 4;
  • FIG. 11 is a schematic cross-sectional view showing a state in which a height adjustment member arranged in a probe unit according to Embodiment 4 is brought into contact with a stage;
  • FIG. 11 is a schematic top view showing the configuration of a probe unit according to Embodiment 5;
  • FIG. 11 is a schematic first cross-sectional view showing the configuration of a probe unit according to Embodiment 5;
  • FIG. 12 is a schematic second cross-sectional view showing the configuration of the probe unit according to Embodiment 5;
  • FIG. 14 is a schematic top view showing the configuration of a probe unit according to Embodiment 6;
  • FIG. 11 is a schematic first cross-sectional view showing the configuration of a probe unit according to Embodiment 6;
  • FIG. 20 is a schematic second cross-sectional view showing the configuration of the probe unit according to Embodiment 6;
  • FIG. 14 is a schematic top view showing the configuration of a probe unit according to Embodiment 7;
  • FIG. 14 is a schematic cross-sectional view showing the configuration of a probe unit according to Embodiment 7;
  • FIG. 21 is a schematic cross-sectional view showing a state in which a height adjustment member arranged in a probe unit according to Embodiment 7 is brought into contact with a stage;
  • each figure is a schematic diagram and is not necessarily strictly illustrated. Therefore, the scales and the like are not always the same in each drawing.
  • symbol is attached
  • the terms “upper” and “lower” do not necessarily refer to vertical upper and vertical lower in absolute spatial recognition, but are terms for defining the relative positional relationship of the constituent elements.
  • the terms “above” and “below” are used not only when two components are spaced apart from each other and there is another component between the two components, but also when two components are spaced apart from each other. It also applies when they are arranged in contact with each other.
  • FIG. 1 is a schematic side view showing the overall configuration of an inspection apparatus 10 according to this embodiment.
  • Each figure shows an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other.
  • the X, Y, and Z axes are a right-handed Cartesian coordinate system.
  • 1 also shows a semiconductor laser device 80, which is an example of an object to be inspected by the inspection apparatus 10. As shown in FIG.
  • the inspection device 10 is a device that inspects the characteristics of an inspection target by supplying current to the inspection target.
  • inspection apparatus 10 includes probe unit 20, stage 70, height adjustment member 50, base 11, post 12, slide rails 13 and 15, 17 , a vertically moving member 14 , a unit moving member 16 , a connecting spring 18 and a unit supporting member 19 .
  • the base 11 is a stand on which other components of the inspection device 10 are arranged.
  • a stage 70 and a column 12 are arranged on the base 11 .
  • the stage 70 is a member having a mounting surface 70a on which an object to be inspected is mounted.
  • the placement surface 70a includes a flat surface perpendicular to the vertical direction (the Z-axis direction in FIG. 1), and the inspection target is arranged on the flat surface.
  • a suction hole 72 is formed at a position on the placement surface 70a where the inspection object is arranged.
  • the probe unit 20 is a unit that includes part of a current circuit for supplying current to the test object, and includes a first probe 30 and the like. A detailed configuration of the probe unit 20 will be described later.
  • the probe unit 20 is fixed to the unit support member 19 .
  • the height adjustment member 50 is a member arranged between the probe unit 20 and the stage 70.
  • the height adjustment member 50 is a member that can be treated as a substantially rigid body, and functions as a spacer that defines the minimum distance between the probe unit 20 and the stage 70 .
  • the height adjusting member 50 is a plate-like member having a thickness corresponding to the minimum distance between the probe unit 20 and the stage 70 and is fixed to the probe unit 20 .
  • the height adjustment member 50 has a unit contact surface 50 b that contacts the probe unit 20 and a stage contact surface 50 a that contacts the stage 70 .
  • the stage contact surface 50a is a rough surface. In this embodiment, the stage contact surface 50a is a rough surface.
  • a rough surface may be defined as a surface having an arithmetic mean roughness Ra of 0.2 ⁇ m or more, for example.
  • the arithmetic average roughness Ra of the stage contact surface 50a and the unit contact surface 50b may be, for example, 0.8 ⁇ m or more and 1.6 ⁇ m or less.
  • the height adjustment member 50 is made of SUS440C, and the stage contact surface 50a has an arithmetic mean roughness Ra of 1.2 ⁇ m.
  • the material forming the height adjustment member 50 is not particularly limited as long as it can be treated as a substantially rigid body.
  • the arithmetic mean roughness Ra of the mounting surface 70a of the stage 70 may be, for example, 0.1 ⁇ m or more and 2.0 ⁇ m or less.
  • the material forming the stage 70 is a WC—Co alloy (a sintered body of tungsten carbide and cobalt), and the arithmetic mean roughness Ra of the mounting surface 70a is 0.15 ⁇ m.
  • the strut 12 is a columnar member erected on the base 11 .
  • the strut 12 extends vertically.
  • the slide rail 13 is a rail-shaped member fixed to the strut 12 .
  • the slide rail 13 has a fixed portion and a slide portion, and the slide portion is supported so as to be vertically slidable with respect to the fixed portion.
  • a fixed portion of the slide rail 13 is fixed to the column 12 , and a sliding portion of the slide rail 13 is fixed to the vertically moving member 14 .
  • the vertically moving member 14 is a member that moves vertically with respect to the column 12 .
  • the vertically moving member 14 is fixed to the slide rail 13 and moves vertically. More specifically, the vertically moving member 14 is fixed to the slide portion of the slide rail 13 and moves vertically with respect to the fixed portion of the slide rail 13 together with the slide portion.
  • the vertically moving member 14 has a vertically extending portion and a horizontally extending portion.
  • a vertically extending portion of the vertically moving member 14 is fixed to the slide portion of the slide rail 13 .
  • the horizontally extending portion of the vertically moving member 14 extends in the Y-axis direction in the example shown in FIG.
  • a slide rail 15 is fixed to the portion of the vertically moving member 14 extending in the horizontal direction.
  • the slide rail 15 is a rail-shaped member fixed to the vertically moving member 14 .
  • the slide rail 15 has a fixed portion and a slide portion, and the slide portion is horizontally slidably supported with respect to the fixed portion.
  • the slide portion is supported by the fixed portion of the slide rail 15 so as to be slidable in the Y-axis direction.
  • the fixed portion of the slide rail 15 is fixed to the horizontally extending portion of the vertically moving member 14
  • the sliding portion of the slide rail 15 is fixed to the unit moving member 16 .
  • the unit moving member 16 is a member that moves the unit supporting member 19 .
  • the unit moving member 16 moves horizontally with respect to the vertical moving member 14 .
  • the unit moving member 16 is fixed to the slide rail 15 and moves in the Y-axis direction. More specifically, the unit moving member 16 is fixed to the slide portion of the slide rail 15 and moves in the Y-axis direction with respect to the fixed portion of the slide rail 15 together with the slide portion.
  • the unit moving member 16 has a horizontally extending portion and a vertically extending portion. A horizontally extending portion of the unit moving member 16 is fixed to a slide portion of the slide rail 15 .
  • One end of a slide rail 17 and a connection spring 18 are fixed to the vertically extending portion of the unit moving member 16 .
  • the slide rail 17 is a rail-shaped member fixed to the unit moving member 16 .
  • the slide rail 17 has a fixed portion and a slide portion, and the slide portion is supported by the fixed portion so as to be vertically slidable.
  • the fixed portion of the slide rail 17 is fixed to the vertically extending portion of the unit moving member 16
  • the sliding portion of the slide rail 17 is fixed to the unit support member 19 . That is, the slide rail 17 connects the unit supporting member 19 to the unit moving member 16 so as to be vertically slidable.
  • connection spring 18 is an elastic member that connects the unit moving member 16 and the unit support member 19 .
  • the connection spring 18 has one end connected to the unit moving member 16 and the other end fixed to the unit support member 19 .
  • the unit support member 19 is a member that supports the probe unit 20.
  • the unit support member 19 is fixed to the slide rail 17 .
  • the unit support member 19 is fixed to the slide portion of the slide rail 17 .
  • the other end of the connection spring 18 is fixed to the unit support member 19 .
  • the unit support member 19 supports the probe unit 20 to which the height adjustment member 50 is fixed.
  • the unit support member 19 is integrated with the probe unit 20 and the height adjustment member 50 .
  • the height adjustment member 50 can be pressed against the stage 70 with a force corresponding to the spring constant of the connection spring 18 while suppressing the application of excessive force. In other words, with the above configuration, it is possible to easily maintain the force for fixing the probe unit 20 to the stage 70 while maintaining the positional relationship between the probe unit 20 and the stage 70 .
  • the height adjustment member 50 has a long distance from the lower end of the support 12 that is connected to the base 11 so that it does not substantially vibrate with respect to the base 11 . Moreover, a plurality of members are interposed between the column 12 and the height adjusting member 50 . Therefore, the height adjusting member 50 is likely to vibrate.
  • the shape formed by the plurality of members intervening from the post 12 to the height adjustment member 50 is not linear but C-shaped, so that even more vibration occurs. It's easy to do.
  • the spring constant of the connection spring 18 is appropriately set, and the vibration can be suppressed by pressing the height adjustment member 50 against the stage 70.
  • the relative position of the height adjustment member 50 to the stage 70 is Shifting can be suppressed. For example, even when the entire inspection apparatus 10 is moved while the height adjustment member 50 is pressed against the stage 70 , it is possible to suppress the displacement of the height adjustment member 50 relative to the stage 70 . That is, it is possible to prevent the first probe 30 of the probe unit 20 from being displaced relative to the semiconductor laser device 80 , and reduce damage to the semiconductor laser device 80 during inspection.
  • FIG. 2, 3, and 4 are a schematic top view, first cross-sectional view, and second cross-sectional view, respectively, showing the configuration of the probe unit 20 according to this embodiment.
  • FIG. 3 shows a cross section along line III-III shown in FIG.
  • FIG. 3 shows a cross section taken along line IV-IV shown in FIG. 3 and 4 also show the height adjustment member 50, the stage 70, and the semiconductor laser device 80 to be inspected.
  • 2 and 4 also show a measuring device 90 for measuring the light from the light emitting point 82e of the semiconductor laser device 80.
  • the measuring device 90 has a light receiving section 92 that receives light, and measures, for example, the power of the received light.
  • the probe unit 20 includes a first probe 30, a second probe 40, and a unit body 21, as shown in FIGS.
  • the unit main body 21 is the main body of the probe unit 20, to which the first probe 30 and the second probe 40 are fixed.
  • the unit main body 21 has a cavity 21v inside when viewed in cross section.
  • the unit body 21 has a probe fixing member 24 and a probe penetrating member 23 .
  • the probe fixing member 24 is a member to which the first probe 30 and the second probe 40 are fixed.
  • the probe fixing member 24 is a plate-like member in which a first fixing hole 27a and a second fixing hole 27b are formed.
  • the first probe 30 is fixed to the probe fixing member 24 with an adhesive 28 while being inserted into the first fixing hole 27a.
  • the second probe 40 is fixed to the probe fixing member 24 with the adhesive 28 while being inserted into the second fixing hole 27b.
  • the probe penetrating member 23 is arranged below the probe fixing member 24 and spaced from the probe fixing member 24, and has a first through hole 26a and a second through hole 26b through which the first probe 30 and the second probe 40 respectively pass. It is a member that is formed.
  • the probe penetrating member 23 is a plate-like member in which a first through hole 26a and a second through hole 26b are formed.
  • a cavity 21 v is present between the probe fixing member 24 and the probe penetrating member 23 .
  • the first probe 30 and the second probe 40 are inserted into the first through-hole 26a and the second through-hole 26b, respectively, and are not fixed to the probe-penetrating member 23 .
  • the probe penetrating member 23 has a facing surface 21u through which the first probe 30 and the second probe 40 penetrate and which faces the inspection target.
  • the facing surface 21u includes a flat portion perpendicular to the vertical direction.
  • the first probe 30 and the second probe 40 have portions protruding downward from the facing surface 21u.
  • the portion protruding downward from the facing surface 21u is vertically movable and perpendicular to the surface of the semiconductor laser device 80 with which the second probe 40 contacts. are arranged so that
  • the probe penetrating member 23 has a penetrating member inclined surface 21s that is inclined with respect to the vertical direction on the facing surface 21u.
  • the penetrating member inclined surface 21s rises with increasing distance from the first through hole 26a and the second through hole 26b.
  • the penetrating member inclined surface 21s is positioned between the position above the inspection target on the facing surface 21u and the outer edge of the facing surface 21u. Since the facing surface 21u has the penetrating member inclined surface 21s, physical interference between the measuring device 90 and the probe unit 20 can be reduced when the measuring device 90 approaches the probe unit 20.
  • the penetrating member inclined surface 21s in a portion facing the light propagation path of the opposing surface 21u, the light emitted from the inspection object can be Blocking by the facing surface 21u can be reduced.
  • the penetrating member inclined surface 21s is a light reflection suppressing surface.
  • a light reflection suppressing surface refers to a surface having a front reflectance of 3% or less at the wavelength of light emitted from an inspection object. As a result, it is possible to prevent the light from the inspection object from being diffusely reflected on the penetrating member inclined surface 21s and becoming noise in the light measurement.
  • the light reflection suppressing surface for example, a matte black coated surface, a roughened surface, or the like can be used.
  • the first probe 30 and the second probe 40 are included in a current circuit for supplying current to the test object, and are conductive members having elastic restoring force.
  • each of the first probe 30 and the second probe 40 includes a metal wire having elastic restoring force.
  • the first probe 30 extends vertically and has a lower end 31 and an upper end 32 .
  • the second probe 40 extends vertically and has a lower end 41 and an upper end 42 .
  • the upper end 32 of the first probe and the upper end 42 of the second probe 40 are located above the probe fixing member 24 .
  • the lower end 31 of the first probe and the lower end 41 of the second probe 40 are positioned below the probe penetrating member 23 .
  • the lower end 31 of the first probe 30 is positioned below the lower end 41 of the second probe 40 when the first probe 30 and the second probe 40 are not in contact with the test object.
  • the length L1 from the facing surface 21u to the lower end 31 of the first probe 30 (that is, the length of the portion of the first probe 30 protruding from the facing surface 21u) is It is longer than the length L2 from the surface 21u to the lower end 41 of the second probe 40 (that is, the length of the portion of the second probe 40 protruding from the facing surface 21u).
  • a semiconductor laser device 80 to be inspected according to the present embodiment has, as shown in FIG. .
  • the element 82 is an edge emitting semiconductor laser element to which current is supplied.
  • the submount 84 has a first electrode disposed on the top surface of the submount 84
  • the device 82 has a device top surface
  • the height d1 from the lower surface of the submount 84 to the first electrode (that is, the vertical dimension from the mounting surface 70a of the stage 70 to the first electrode), and the second electrode of the element 82 from the lower surface of the submount 84
  • the following inequalities hold for the height d2 (that is, the vertical dimension from the mounting surface 70a of the stage 70 to the second electrode) and the lengths L1 and L2 described above.
  • FIG. 5 is a schematic cross-sectional view showing the shape of the first probe 30 according to the present embodiment when the lower end 31 of the first probe 30 does not receive an upward force.
  • FIG. 6 is a schematic cross-sectional view showing the shape of the first probe 30 in a state where the lower end 31 of the first probe 30 according to the present embodiment receives an upward force.
  • the first probe 30 extends linearly in the vertical direction when the lower end 31 does not receive an upward force.
  • the first probe 30 exhibits the buckling phenomenon. That is, when the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 receive an upward force, the first probe 30 deforms in a direction intersecting the vertical direction.
  • the first probe 30 when the upward force applied to the lower end 31 is released, the first probe 30 returns to its original shape, as shown in FIG. Thus, the first probe 30 has elastic restoring force.
  • the elastic restoring force of the first probe 30 is represented by F1
  • the spring constant of the first probe 30 is represented by k1
  • the displacement amount of the lower end 31 of the first probe 30 is represented by Lx1
  • the second probe 40 also exhibits a buckling phenomenon like the first probe 30. Further, when the elastic restoring force of the second probe 40 is represented by F2, the spring constant of the second probe 40 is represented by k2, and the displacement amount of the lower end 41 of the second probe 40 is represented by Lx2, the following equation holds.
  • the first probe 30 and the second probe 40 have elastic restoring force. Further, since the above inequalities (2) and (3) hold, the height adjustment member 50 and the probe unit 20 are lowered until the stage contact surface 50a of the height adjustment member 50 contacts the mounting surface 70a of the stage 70. In this case, the displacement amount Lx1 of the lower end 31 of the first probe 30 and the displacement amount Lx2 of the lower end 41 of the second probe 40 are represented by the following equations.
  • Lx1 L1+d1-H>0 (6)
  • Lx2 L2+d2-H>0 (7)
  • each probe can be vertically pressed against the contact surface of each probe in the semiconductor laser device 80 by the elastic restoring forces represented by the above formulas (4) and (5).
  • horizontal force is not applied to the contact surface, so that horizontal displacement of each probe on the surface of the semiconductor laser device can be suppressed.
  • the stage 70 is a member having a mounting surface 70a on which an object to be inspected is mounted, as described above.
  • the mounting surface 70a has a stage inclined surface 70s inclined with respect to the vertical direction.
  • the stage inclined surface 70s descends as it approaches the end of the mounting surface 70a. Since the mounting surface 70 a has the stage inclined surface 70 s in this way, physical interference between the measuring device 90 and the stage 70 can be reduced when the measuring device 90 is brought closer to the probe unit 20 .
  • a light-emitting device such as a semiconductor laser device is used as an inspection object, the light is blocked by the mounting surface 70a by arranging the stage inclined surface 70s in a portion facing the light propagation path of the mounting surface 70a.
  • the stage inclined surface 70s may be a light reflection suppressing surface.
  • the light reflection suppressing surface for example, a black surface, a rough surface, or the like can be used similarly to the penetrating member inclined surface 21s.
  • FIG. 7, 8, and 17 to 21 are schematic side views explaining each step of the inspection method according to this embodiment.
  • 9 to 12 are schematic top views showing each step of the first position adjustment method for the inspection object in the inspection method according to the present embodiment.
  • 13 to 16 are schematic top views showing each step of the second position adjustment method for the inspection object in the inspection method according to the present embodiment.
  • the inspection method according to the present embodiment is a method of inspecting characteristics of an inspection object by supplying a current to the inspection object.
  • the inspection is performed using the inspection apparatus 10 .
  • an example of an object to be inspected an example of inspecting a semiconductor laser device 80 will be described below.
  • an object to be inspected is put into the inspection apparatus 10.
  • a semiconductor laser device 80 to be inspected is mounted on a mounting surface 70a of a stage 70 provided in the inspection apparatus 10.
  • a collet or the like can be used to move the semiconductor laser device 80 .
  • the semiconductor laser device 80 is arranged on the suction holes 72 of the mounting surface 70a.
  • the position of the semiconductor laser device 80 placed on the mounting surface 70a is adjusted to place the semiconductor laser device 80 at a predetermined position.
  • the position adjustment method is not particularly limited, a first position adjustment method and a second position adjustment method will be described below as examples of the position adjustment method.
  • FIG. 1 the frame Fm is arranged on the mounting surface 70a of the stage 70, as shown in FIG.
  • the frame Fm is arranged at a position corresponding to a predetermined position of the semiconductor laser device 80 (that is, a target position for position adjustment).
  • the frame Fm is arranged on the mounting surface 70a of the stage 70 so that the semiconductor laser device 80 is positioned inside the rectangular annular frame Fm.
  • a through-hole is formed in the frame Fm, and the semiconductor laser device 80 is pushed in the negative direction in the X-axis direction using a push rod Pm passing through the through-hole.
  • the position of the frame Fm is fixed so that the frame Fm does not move with respect to the placement surface 70a.
  • the semiconductor laser device 80 is pressed against the inner wall of the frame Fm on the negative side in the X-axis direction. Adjusted to the position defined by the inner wall.
  • the position of the semiconductor laser device 80 before movement is indicated by a dotted line.
  • the semiconductor laser device 80 is pushed forward in the Y-axis direction using a push rod Pm passing through another through hole formed in the frame Fm.
  • the position of the frame Fm is fixed so that the frame Fm does not move with respect to the placement surface 70a.
  • the semiconductor laser device 80 is pressed against the inner wall of the frame Fm on the positive side in the Y-axis direction. Adjusted to the position defined by the inner wall.
  • the position of the semiconductor laser device 80 before movement is indicated by a dotted line.
  • the position of the semiconductor laser device 80 is adjusted by pressing the semiconductor laser device 80 against the inner wall of the frame Fm with the position of the inner wall of the frame Fm aligned with the predetermined position of the semiconductor laser device 80 . It can be performed. In order to perform these position adjustments smoothly, it is preferable that the placement surface 70a be a smooth surface.
  • FIG. 13 In the second position adjustment method, first, the frame Fm is arranged on the mounting surface 70a of the stage 70, as shown in FIG. The frame Fm is arranged on the mounting surface 70a of the stage 70 so that the semiconductor laser device 80 is positioned inside the rectangular annular frame Fm.
  • a predetermined position of the semiconductor laser device 80 that is, a target position for position adjustment
  • the frame Fm is moved in the positive direction of the X-axis.
  • the semiconductor laser device 80 is moved in the positive X-axis direction, as shown in FIG. In FIG. 14, the positions of the frame Fm and the semiconductor laser device 80 before movement are indicated by dotted lines.
  • the frame Fm is moved in the positive direction of the Y-axis.
  • the inner wall of the frame Fm pushes the semiconductor laser device 80 in the positive Y-axis direction, thereby moving the semiconductor laser device 80 in the positive Y-axis direction as shown in FIG.
  • the positions of the frame Fm and the semiconductor laser device 80 before movement are indicated by dotted lines.
  • the position of the semiconductor laser device 80 can be adjusted by pushing the semiconductor laser device 80 with the inner wall of the frame Fm. Further, according to the second position adjustment method, when the position of the semiconductor laser device 80 is adjusted, the position can be continuously adjusted in the X-axis direction and the Y-axis direction using only one jig, the frame body Fm. It can be carried out. Therefore, the time required for position adjustment can be reduced.
  • the stage 70 of the inspection device 10 has suction holes 72 for sucking the inspection target.
  • the inspection apparatus 10 includes a frame Fm that surrounds the inspection target attracted to the stage 70 .
  • the inspection apparatus 10 adjusts the position of the inspection object by moving the frame Fm.
  • the probe unit 20 is moved from the retracted position to above the stage 70 as shown in FIG.
  • the probe unit 20 is moved above the stage 70 by moving the unit moving member 16 in the negative Y-axis direction.
  • the probe unit 20 is lowered to bring the first probe 30 and the second probe 40 (not shown in FIG. 18) of the probe unit 20 into contact with the semiconductor laser device 80.
  • the stage contact surface 50a of the height adjustment member 50 is pressed against the mounting surface 70a of the stage 70 by lowering the vertically moving member 14 .
  • the first probe 30 and the second probe 40 of the probe unit 20 are pressed against the first electrode and the second electrode of the semiconductor laser device 80, respectively.
  • the characteristics of the semiconductor laser device 80 are inspected.
  • a measuring device for measuring the power of light emitted from the semiconductor laser device 80 is used.
  • the probe unit 20 is raised to separate the first probe 30 and the second probe 40 (not shown in FIG. 19) from the semiconductor laser device 80.
  • the probe unit 20 and the height adjustment member 50 are raised by raising the vertically moving member 14 .
  • the first probe 30 and the second probe 40 of the probe unit 20 are separated from the first electrode and the second electrode of the semiconductor laser device 80, respectively.
  • the probe unit 20 is moved from above the stage 70 to the retracted position.
  • the probe unit 20 is retracted by moving the unit moving member 16 in the positive Y-axis direction.
  • the semiconductor laser device 80 is ejected from the inspection device 10. Then, as shown in FIG. That is, the semiconductor laser device 80 is moved from the mounting surface 70 a of the stage 70 of the inspection device 10 to the outside of the inspection device 10 .
  • a vacuum collet or the like can be used while the suction by the suction holes is stopped.
  • the semiconductor laser device 80 to be inspected can be inspected.
  • FIGS. 22 to 28 are schematic cross-sectional views for explaining the operation of the probe unit 20 according to this embodiment.
  • the states of the probe unit 20 in the steps shown in FIGS. 17, 18 and 19 of the inspection method described above are shown in FIGS. 22, 25 and 28, respectively.
  • the state of the probe unit 20 from the process shown in FIG. 17 to the process shown in FIG. 18 is shown in FIGS. 22-25.
  • the state of the probe unit 20 from the step shown in FIG. 18 to the step shown in FIG. 19 is shown in FIGS. 25-28.
  • the probe unit 20 is positioned above the stage 70, and the first probe 30 and the second probe 40 are not in contact with the semiconductor laser device 80, as shown in FIG. . Also, the height adjustment member 50 is not in contact with the stage 70 .
  • the first probe 30 is moved to the first electrode (not shown in FIG. 23) arranged on the upper surface of the submount 84 of the semiconductor laser device 80. shown) (first contact step).
  • the second probe 40 is not in contact with the second electrode arranged on the top surface of the element 82 of the semiconductor laser device 80 .
  • the height adjustment member 50 does not contact the mounting surface 70 a of the stage 70 .
  • the probe unit 20 is gradually lowered while the first probe 30 is in contact with the first electrode, so that the second probe 40 is connected to the semiconductor laser device as shown in FIG. 80 is brought into contact with a second electrode (not shown in FIG. 24) arranged on the upper surface of the element 82 (second contacting step).
  • the lower end 31 of the first probe 30 is displaced upward with respect to the probe penetrating member 23 . Accordingly, as shown in FIG. 24, the first probe 30 bends in the cavity 21v. That is, the first probe 30 exhibits a buckling phenomenon.
  • the lower end 31 of the first probe 30 presses the first electrode toward the stage 70 with the elastic restoring force represented by Equation (4).
  • the first probe 30 causes a buckling phenomenon, the portion of the first probe 30 protruding downward from the facing surface 21u continues to be perpendicular to the contact surface of the semiconductor laser.
  • the probe unit 20 is gradually lowered to move the stage contact surface 50a of the height adjustment member 50. It is pressed against the mounting surface 70 a of the stage 70 .
  • the elastic restoring force corresponding to the displacement of the lower end 31 is further increased. That is, the force with which the lower end 31 of the first probe 30 presses the first electrode toward the stage 70 becomes stronger.
  • the lower end 41 of the second probe 40 is displaced upward with respect to the probe penetrating member 23 .
  • the second probe 40 bends in the cavity 21v. That is, the second probe 40 exhibits a buckling phenomenon.
  • the lower end 41 of the second probe 40 presses the second electrode toward the stage 70 with the elastic restoring force represented by Equation (5).
  • the second probe 40 causes a buckling phenomenon, the portion of the second probe 40 protruding downward from the facing surface 21u continues to maintain a state perpendicular to the contact surface of the semiconductor laser.
  • a current is supplied to the semiconductor laser device 80 to be inspected while the first probe 30 is in contact with the first electrode and the second probe 40 is in contact with the second electrode. (supply process).
  • supply process By supplying a current to the semiconductor laser device 80 through the first probe 30 and the second probe 40, the characteristics of the semiconductor laser device 80 are inspected.
  • the stage contact surface 50a of the height adjustment member 50 is separated from the mounting surface 70a of the stage 70, as shown in FIG.
  • the second probe 40 is separated from the second electrode as shown in FIG. 27 (second detachment step).
  • the second probe 40 has returned to the state before exhibiting the buckling phenomenon due to the elastic restoring force.
  • the first probe 30 is separated from the first electrode as shown in FIG. 28 (first detachment step).
  • the first probe 30 has returned to the state before exhibiting the buckling phenomenon due to the elastic restoring force.
  • the probe unit 20 can be used to inspect the inspection target.
  • the probe unit 20 is a unit including part of a current circuit for supplying current to an object to be inspected.
  • the probe unit 20 includes a first probe 30 and a second probe 40, which are included in the current circuit and have an elastic restoring force, a probe fixing member 24 to which the first probe 30 and the second probe 40 are fixed, and a probe fixing member.
  • the probe penetrating member 23 has a facing surface 21u through which the first probe 30 and the second probe 40 penetrate and which faces the inspection target.
  • the portions of the first probe 30 and the second probe 40 that protrude downward from the facing surfaces are vertically movable.
  • the lower end 31 of the first probe 30 is positioned below the lower end 41 of the second probe 40 when the first probe 30 and the second probe 40 are not in contact with the test object.
  • the lower end 31 of the first probe 30 is attached to the first electrode lower in height than the second electrode. can be brought into contact first and pressed against the mounting surface 70a.
  • the semiconductor laser device 80 has a first electrode with which the lower end 31 of the first probe 30 contacts and a second electrode with which the lower end 41 of the second probe 40 contacts.
  • the first electrode is positioned below the second electrode, and the difference in vertical position between the lower end 31 of the first probe 30 and the lower end 41 of the second probe 40 is greater than the difference in the positions of Therefore, when the probe unit 20 is brought closer to the semiconductor laser device 80, the first probe 30 can be reliably brought into contact with the first electrode before the second probe 40 comes into contact with the second electrode.
  • the low portion (first electrode) of the semiconductor laser device 80 is pressed against the mounting surface 70a before the high portion (second electrode), the high portion is pressed against the mounting surface 70a first, the possibility that the semiconductor laser device 80 will topple over (that is, roll over) can be reduced. Therefore, it is possible to reduce the damage caused by the semiconductor laser device 80 falling down during inspection.
  • the displacement of the lower end 41 of the second probe 40 with respect to the probe penetrating member 23 in the supply step should be smaller than the displacement of the lower end 31 of the first probe 30 with respect to the probe penetrating member 23. can be done. Therefore, the force with which the lower end 41 of the second probe 40 presses the second electrode is more likely to be reduced than the force with which the lower end 31 of the first probe 30 presses the first electrode. Therefore, it is possible to suppress the formation of probe traces (that is, dents) on the second electrode.
  • relatively soft Au may be used as the second electrode of the element 82 of the semiconductor laser device 80 . In this case, the probe unit 20 according to the present embodiment is particularly effective because the second electrode is likely to have probe marks.
  • the first probe 30 can be separated from the first electrode after the second probe 40 is separated from the second electrode. Accordingly, since the first probe 30 presses the first electrode when the second probe 40 is separated from the second electrode, it is possible to reduce the lifting of the semiconductor laser device 80 together with the second probe 40 . Therefore, it is possible to reduce damage caused by dropping the semiconductor laser device 80 after being lifted.
  • relatively soft Au may be used as the second electrode. Easy to stick. Therefore, when the second probe 40 is separated from the second electrode, the semiconductor laser device 80 is easily lifted. Therefore, the probe unit 20 according to this embodiment is particularly effective.
  • the first probe 30 and the second probe 40 of the probe unit 20 may exhibit a buckling phenomenon.
  • FIG. 29 is a schematic diagram showing the positional relationship between the first probe 30 and the first through-hole 26a when the first probe 30 according to the present embodiment does not exhibit the buckling phenomenon.
  • FIG. 30 is a schematic diagram showing the positional relationship between the first probe 30 and the first through-hole 26a when the first probe 30 according to the present embodiment exhibits a buckling phenomenon. 29 and 30 show a sectional view (a) of the first through hole 26a and the first probe 30, and a top view (b) and a bottom view (c) of the first through hole 26a.
  • the first probe 30 when the first probe 30 does not exhibit the buckling phenomenon, the first probe 30 is not pressed against the inner wall surrounding the first through-hole 26a, and therefore the first through-hole 26a is not pressed. can move freely. That is, along with the vibration of the probe unit 20, the first probe 30 near the through hole also vibrates.
  • the first probe 30 when the first probe 30 exhibits a buckling phenomenon, it deviates in a direction perpendicular to the vertical direction. The first probe 30 is pressed against the inner wall surrounding the first through hole 26a. In this case, the movement of the first probe 30 is restricted by the frictional force between the first probe 30 and the inner wall surrounding the first through hole 26a.
  • vibration of the first probe 30 can be suppressed.
  • a case will be described in which the stage 70 on which the probe unit 20 and the inspection object are placed is moved while the first probe 30 and the second probe 40 are pressed against the inspection object.
  • the first probe 30 and the second probe 40 exhibit a buckling phenomenon, by moving the stage 70 on which the probe unit 20 and the test object are placed, the first probe 30 and the second probe 40 Even if a vibrational force is applied to the first probe 30 and the second probe 40, the frictional force can suppress the vibration near the through holes of the first probe 30 and the second probe 40. FIG. Therefore, it is possible to suppress damage to the inspection target due to vibration of each probe.
  • the facing surface 21u of the probe unit 20 may have a penetrating member inclined surface 21s that is inclined with respect to the vertical direction.
  • the penetrating member inclined surface 21s rises with increasing distance from the first through hole 26a and the second through hole 26b.
  • the facing surface 21u With the facing surface 21u with the penetrating member inclined surface 21s in this way, physical interference between the measuring device 90 and the probe unit 20 can be reduced when the measuring device 90 approaches the probe unit 20. Further, when a light-emitting element such as a semiconductor laser element is used as an inspection target, light is blocked by the opposing surface 21u by arranging the penetrating member inclined surface 21s in a portion facing the light propagation path of the opposing surface 21u. can be reduced.
  • a light-emitting element such as a semiconductor laser element
  • the penetrating member inclined surface 21s according to the present embodiment may be a light reflection suppressing surface.
  • the inspection apparatus 10 includes a probe unit 20, a stage 70 having a mounting surface 70a on which an object to be inspected is mounted, and a height adjustment member disposed between the probe unit 20 and the stage 70. 50.
  • the height adjustment member 50 can function as a spacer that defines the minimum distance between the probe unit 20 and the stage 70. Therefore, even when the position control accuracy of the mechanism for driving the probe unit 20 of the inspection apparatus 10 is low, the distance between the probe unit 20 and the stage 70 can be precisely controlled by the height adjustment member 50 . Therefore, it is possible to prevent the probe unit 20 and the stage 70 from being too close to each other, thereby applying excessive stress to the inspection target and damaging the inspection target.
  • vibration of the probe unit 20 can be suppressed. Therefore, it is possible to suppress the inspection object from being damaged by each probe as each probe vibrates.
  • the height adjusting member 50 may be arranged on the facing surface 21u of the probe unit 20. Thereby, the height adjusting member 50 can be retracted together with the probe unit 20 . Therefore, when the inspection target is placed on the mounting surface 70a of the stage 70, physical interference of the height adjusting member 50 with a collet or the like for moving the inspection target can be reduced.
  • the mounting surface 70a of the stage 70 may have a stage inclined surface 70s inclined with respect to the vertical direction.
  • the stage inclined surface 70s descends as it approaches the end of the mounting surface 70a.
  • the mounting surface 70 a has the stage inclined surface 70 s in this way, physical interference between the measuring device 90 and the stage 70 can be reduced when the measuring device 90 is brought closer to the probe unit 20 . Further, when a light-emitting device such as a semiconductor laser device is used as an inspection object, the light is blocked by the mounting surface 70a by arranging the stage inclined surface 70s in a portion facing the light propagation path of the mounting surface 70a. can be reduced.
  • the stage inclined surface 70s according to the present embodiment may be a light reflection suppressing surface.
  • the stage 70 may have suction holes 72 for sucking the inspection target.
  • the inspection apparatus 10 may include a frame Fm surrounding the inspection object attracted to the stage 70 . The inspection apparatus 10 adjusts the position of the inspection object by moving the frame Fm.
  • the inspection method is an inspection method for inspecting characteristics of an inspection object by supplying current to the inspection object.
  • a semiconductor laser device 80 which is an example of an object to be inspected, has a submount 84 having an upper surface, and an element 82 having an upper surface of an element, arranged on the upper surface of the submount 84, and supplied with current.
  • the submount 84 has a first electrode located on the top surface and the device 82 has a second electrode located on the top surface of the device.
  • the inspection method includes a first contact step of contacting the first probe 30 with the first electrode, and after the first contact step, the second probe 40 is contacted with the first electrode while the first probe 30 is in contact with the first electrode. and a second contacting step of contacting the electrode.
  • the first probe 30 and the second probe 40 are included in a current circuit that supplies current to the test object, and have elastic restoring force.
  • the inspection method it is possible to reliably bring the first probe 30 into contact with the first electrode before the second probe 40 comes into contact with the second electrode.
  • the low portion (first electrode) of the test object is pressed against the mounting surface 70a before the high portion (second electrode)
  • the high portion is pressed first.
  • the possibility of the inspection object falling down can be reduced. Therefore, it is possible to reduce the damage caused by the inspection object falling down during the inspection.
  • the inspection method according to the present embodiment can be implemented using, for example, the inspection apparatus 10 described above.
  • a semiconductor laser device 80 which is an example of an object to be inspected, has a submount 84 having an upper surface, and an element 82 having an upper surface of an element, arranged on the upper surface of the submount 84, and supplied with current.
  • the submount 84 has a first electrode located on the top surface and the device 82 has a second electrode located on the top surface of the device.
  • the inspection method includes a supply step of supplying a current to the inspection target while the first probe 30 is in contact with the first electrode and the second probe 40 is in contact with the second electrode, and after the supply step, a second It includes a second detachment step of detaching the two probes 40 from the second electrode, and a first detachment step of detaching the first probe 30 from the first electrode after the second detachment step.
  • the first probe 30 and the second probe 40 are included in a current circuit that supplies current to the test object, and have elastic restoring force.
  • the inspection method according to this embodiment is particularly effective.
  • the inspection method according to the present embodiment can be implemented using, for example, the inspection apparatus 10 described above.
  • FIG. 31 is a schematic top view showing the overall configuration of the inspection system 1 according to this embodiment.
  • FIG. 32 is a schematic top view showing the overall configuration of an inspection system 1a according to a modification of the present embodiment.
  • FIGS. 31 and 32 also show a measuring device 90 used in the inspection and a semiconductor laser device 80 as an example of an object to be inspected.
  • the inspection system 1 includes an inspection device 10 and a transport device 5 that transports the inspection device 10 .
  • the transport device 5 is a turntable that has a circular shape and rotates about its center as a rotation axis, and transports the inspection device 10 arranged on the transport device 5 in the circumferential direction.
  • the inspection system 1 includes a plurality of inspection devices 10.
  • twelve inspection devices 10 are arranged in a circle along the circular edge of the transport device 5.
  • the inspection apparatus 10 is arranged on a circle with a radius of about 300 mm at intervals of 30 degrees.
  • the average moving speed of the inspection device 10 is, for example, about 200 mm/second, and the time required for moving the central angle of 30 degrees is, for example, about 0.8 seconds.
  • the inspection device 10 executes each step of the inspection method described above according to the position of the transport destination transported by the transport device 5 . That is, the inspection device 10 is first transported to the 5 o'clock position of the transport device 5 shown in FIG. Subsequently, the inspection device 10 is stopped after being transported counterclockwise to the 4 o'clock position of the transport device 5, and the position of the inspection object is adjusted. Subsequently, the inspection apparatus 10 is conveyed counterclockwise to the 3 o'clock position of the conveying apparatus 5 and then stopped, and the probe unit 20 is moved. Here, the first probe 30 and the second probe 40 are brought into contact with the inspection object.
  • the inspection device 10 is transported counterclockwise to the 2 o'clock position of the transport device 5 in a state in which the first probe 30 and the second probe 40 are in contact with the inspection object, and then stopped.
  • a predetermined current is supplied, the characteristics are measured (that is, an inspection is performed), and the current supply is stopped.
  • the inspection device 10 repeatedly transports and stops counterclockwise from the 1 o'clock position to the 8 o'clock position of the transport device 5 while the first probe 30 and the second probe 40 are in contact with the inspection object. and inspects the object to be inspected each time it stops.
  • seven tests are performed. Each inspection may be a different inspection, or the same inspection may be performed multiple times. For example, in each test, the magnitude of the current and voltage supplied to the test object may be changed, or the waveform of the current may be changed.
  • a measuring device is arranged at each of the plurality of inspection positions to measure the inspection target.
  • the inspection device 10 is transported counterclockwise to the 7 o'clock position of the transport device 5 with the first probe 30 and the second probe 40 in contact with the inspection object, and then stopped. evacuate. Subsequently, the inspection apparatus 10 is stopped after being conveyed counterclockwise to the 6 o'clock position of the conveying apparatus 5, and the inspection target is discharged.
  • the inspection apparatus 10 is transported while the first probe 30 and the second probe 40 are in contact with the inspection target. Therefore, when performing a plurality of inspections at different positions, it is not necessary to move and retract the probe unit 20 each time it is moved.
  • the movement and retraction of the probe unit 20 are processes that require a particularly long time.
  • the distance that the probe unit 20 moves in the horizontal direction is about 100 mm, and the movement takes about 0.8 seconds. That is, the average moving speed is about 125 mm/sec.
  • probe marks formed on the inspection object by the first probe 30 and the second probe 40 can be reduced. Furthermore, it takes about 0.8 seconds to move the probe unit 20 in the vertical direction. By reducing the number of moving and retracting steps of the probe unit 20 that require a relatively long time in this manner, a significant reduction in inspection time can be realized.
  • the number of times the first probe 30 and the second probe 40 are brought into contact with and separated from the inspection object can be reduced, so probe marks formed on the inspection object can be reduced.
  • the inspection apparatus 10 includes a height adjustment member 50 arranged between the probe unit 20 and the stage 70 .
  • the height adjustment member 50 can be pressed against the mounting surface 70a of the stage 70 when the first probe 30 and the second probe 40 are brought into contact with the inspection object. Therefore, when the inspection device 10 is transported, it is possible to suppress the vibration of the probe unit 20, the first probe 30, and the second probe 40 due to the frictional force between the height adjustment member 50 and the mounting surface 70a. Thereby, it is possible to suppress damage to the inspection object due to the vibration of the first probe 30 and the second probe 40 .
  • the stage contact surface 50a of the height adjustment member 50 is a rough surface, so that the frictional force between the stage contact surface 50a and the mounting surface 70a of the stage 70 can be increased. can be done. Therefore, the vibration of the probe unit 20 with respect to the stage 70 can be further suppressed when the inspection apparatus 10 is transported, and the vibration of the first probe 30 and the second probe 40 with respect to the inspection object can be further suppressed. can.
  • the plurality of inspection devices 10 can move the probe units 20 in the radial direction of the transport device 5, as shown in FIG.
  • the inspection device 10 includes a moving mechanism that moves the probe unit 20 in a direction perpendicular to the transport direction of the inspection device 10 .
  • the moving mechanism is implemented by the unit moving member 16 and the like described above. With such a moving mechanism, it is possible to reduce the occurrence of physical interference between the collet or the like used for moving the inspection object and the probe unit 20 or the like when the inspection object is loaded into the inspection apparatus 10 from the outside of the transport device 5. .
  • an inspection system 1a according to a modification of the present embodiment will be described using FIG.
  • an inspection system 1 a according to this modification includes an inspection device 10 and a transport device 5 a that transports the inspection device 10 .
  • An inspection system 1a according to this modification also includes a plurality of inspection devices 10, like the inspection system 1 described above.
  • a conveying device 5a according to this modified example differs from the above-described conveying device 5 mainly in the shape of the conveying path.
  • a conveying device 5a according to this modification has an oval shape, and a plurality of inspection devices 10 are arranged in an oval shape along the periphery of the conveying device 5a.
  • a plurality of inspection devices 10 are transported along an oval transport path. Therefore, the transport device 5a has both a transport path for transporting the inspection apparatus 10 in a straight line and a transport path for transporting the inspection apparatus 10 in an arc.
  • the average moving speed of the inspection device 10 is, for example, about 190 mm/sec, and the conveying distance per one conveying is, for example, 150 mm.
  • the time required for one transport is, for example, about 0.8 seconds.
  • the inspection device 10 is transported in a state in which the first probe 30 and the second probe 40 of the inspection device 10 are in contact with the inspection object.
  • the inspection system 1a according to this modified example can also achieve the same effect as the inspection system 1 described above.
  • FIG. 33 is a flow chart showing the flow of the method for manufacturing the semiconductor laser device 80 according to this embodiment.
  • the semiconductor laser device 80 is assembled (S10).
  • semiconductor laser device 80 includes submount 84 and element 82 .
  • Device 82 is a semiconductor laser device.
  • the semiconductor laser device 80 is assembled, for example, by preparing a submount 84 and arranging the element 82 on the upper surface of the submount 84 .
  • the semiconductor laser device 80 is inspected (S20).
  • the semiconductor laser device 80 is inspected as an inspection object using the inspection method according to the present embodiment.
  • the semiconductor laser device 80 according to this embodiment can be manufactured. According to the manufacturing method of the semiconductor laser device 80 according to the present embodiment, by using the inspection method according to the present embodiment, the same effect as the inspection method described above can be obtained, and damage to the semiconductor laser device 80 during the inspection can be prevented. can be reduced.
  • FIG. 34 is a schematic cross-sectional view showing part of the probe unit according to this modification.
  • FIG. 34 shows the configuration of the first through-hole 26a of the probe-penetrating member 23 and its periphery.
  • the probe unit of this modified example differs from the probe unit 20 described above in the configuration of the first probe 130 .
  • a first probe 130 according to this modification has a conductor 36 and an insulating film 38 .
  • the conductor 36 is a conductive member having elastic restoring force.
  • the conductor 36 is, for example, a metal wire.
  • the conductor 36 is fixed by the probe fixing member 24 and passes through the probe penetrating member 23, similarly to the first probe 30 described above.
  • the insulating film 38 is an electrically insulating film that partially covers the conductor 36 .
  • the insulating film 38 covers the portion of the conductor 36 located above the probe penetrating member 23 when the lower end 131 of the first probe 130 is not in contact with the test object.
  • a portion of the conductor 36 located in the cavity 21v may be covered while the lower end 131 of the first probe 130 is not in contact with the test object.
  • the thickness of the first probe 130 at the portion where the insulating film 38 covers the conductor 36 may be larger than the diameter of the first through hole 26a. Thereby, the insulating film 38 can prevent the first probe 130 from falling downward from the first through hole 26a.
  • the second probe may also have a conductor and an insulating film, like the first probe 130 .
  • FIG. 35 is a schematic cross-sectional view showing part of the probe unit according to this modification.
  • the probe unit according to this modified example differs from the probe unit according to modified example 1 in the configuration of the probe penetrating member 123 .
  • a first through hole 126a is formed in the probe penetrating member 123 according to this modified example.
  • the probe penetrating member 123 has a plurality of guide members 123a, 123c, 123e that are spaced apart from each other in the vertical direction.
  • a first guide hole through which the first probe 130 penetrates is formed in each of the plurality of guide members 123a, 123c, and 123e.
  • a first guide hole 126aa is formed in the guide member 123a.
  • a first guide hole 126ca is formed in the guide member 123c arranged below the guide member 123a.
  • a first guide hole 126ea is formed in the guide member 123e arranged below the guide member 123c.
  • each guide member is made of an electrically insulating material.
  • aromatic polyester, nylon, Teflon (registered trademark), fluorine resin such as polytetrafluoroethylene, or ceramics can be used.
  • a conductive member such as metal can be used as each guide member.
  • a spacer is arranged between two adjacent guide members.
  • a spacer 123b is arranged between the guide member 123a and the guide member 123c.
  • a spacer 123d is arranged between the guide member 123c and the guide member 123e.
  • a first spacer hole 126ba is formed in the spacer 123b, and a first spacer hole 126da is formed in the spacer 123d.
  • the first through hole 126a of the probe penetrating member 123 includes first guide holes 126aa, 126ca, 126ea and first spacer holes 126ba, 126da. That is, the first probe 130 passes through the first guide holes 126aa, 126ca, 126ea and the first spacer holes 126ba, 126da.
  • the centers of the first guide holes 126aa, 126ca, and 126ea are at the same position in the horizontal direction (that is, at the same position on the XY plane), and the penetrating first probe 130 is perpendicular to the bottom surface of the probe penetrating member 123. ing.
  • the diameters of the first spacer holes 126ba, 126da are larger than the diameters of the first guide holes 126aa, 126ca, 126ea. Thereby, the first probe 130 is guided to the first guide holes 126aa, 126ca, 126ea.
  • the thickness of each guide member smaller than the thickness of each spacer, the area where the first probe 130 contacts the probe penetrating member 123 in the first through hole 126a can be reduced. of friction can be reduced. In order to further reduce friction, corners (edges) may be eliminated from the periphery of each first through hole of each guide member.
  • the inclination of the first probe 130 can be reduced.
  • each spacer by setting the thickness of each spacer to a predetermined thickness or less determined based on the spring constant of the first probe 130, it is possible to suppress the first probe 130 from buckling in each first spacer hole.
  • the second through hole of the probe penetrating member 123 can also have the same configuration as the first through hole 126a.
  • FIG. 36 is a schematic cross-sectional view showing part of the probe unit according to this modification.
  • the probe unit according to this modified example differs from the probe unit according to modified example 2 in the configuration of the probe penetrating member 223 .
  • the probe penetrating member 223 has a plurality of guide members 223a and 223c arranged apart from each other in the vertical direction.
  • a first guide hole through which the first probe 130 penetrates is formed in each of the plurality of guide members 223a and 223c.
  • a first guide hole 226aa is formed in the guide member 223a.
  • a first guide hole 226ca is formed in the guide member 223c arranged below the guide member 223a.
  • a spacer 223b is arranged between two adjacent guide members 223a and 223c.
  • a first spacer hole 226ba is formed in the spacer 223b.
  • the first through hole 226a of the probe penetrating member 223 includes first guide holes 226aa and 226ca and a first spacer hole 226ba. That is, the first probe 130 passes through the first guide holes 226aa and 226ca and the first spacer hole 226ba.
  • the diameter of the first spacer hole 226ba is larger than the diameter of the first guide holes 226aa and 226ca. Thereby, the first probe 130 is guided to the first guide holes 226aa and 226ca. Further, similarly to the probe penetrating member 123 according to Modification 2, by making the thickness of each guide member smaller than the thickness of the spacer 223b, the first probe 130 comes into contact with the probe penetrating member 223 in the first through hole 226a. Since the area to be covered can be reduced, friction with the probe penetrating member 223 can be reduced.
  • the gap between the first guide hole 226aa of the guide member 223a closest to the probe fixing member (that is, arranged at the top) and the first probe 130 among the plurality of guide members is It is larger than the gap between the first probe 130 and the first guide hole 226ca of the guide member 223c furthest (that is, arranged at the bottom) from the probe fixing member.
  • the guide member 223a closest to the probe fixing member among the plurality of guide members has a thickness larger than the guide member 223c farthest from the probe fixing member among the plurality of guide members.
  • each probe buckles in cavity 21v when pressed against the test object. Therefore, in the first probe 130 located in the first through hole 226a, the stress associated with the buckling of the first probe 130 increases in the portion near the cavity 21v, that is, in the uppermost portion.
  • the second through hole of the probe penetrating member 223 can also have the same configuration as the first through hole 226a.
  • FIG. 37 is a schematic cross-sectional view showing part of the probe unit according to this modification.
  • the probe unit according to this modification differs from the probe unit according to modification 3 in the configuration of the first probe 130a.
  • the first probe 130 a has a conductor 36 and an insulating film 338 .
  • the insulating film 338 according to this modified example is formed in a portion of the first probe 130 a that contacts each probe penetrating member 223 .
  • a conductive member can be used for the probe penetrating member 223, the degree of freedom of the material used for the probe penetrating member 223 can be increased.
  • the second probe can also have the same configuration as the first probe 130a.
  • FIG. 38 is a schematic top view showing part of the probe penetrating member 423 of the probe unit according to this modification.
  • the probe unit according to this modification differs from the probe unit 20 described above in the configuration of the first through hole 426 a of the probe penetrating member 423 .
  • a probe penetrating member 423 according to this modified example has a first inner wall 426w surrounding a first through hole 426a.
  • the first inner wall 426w has one or more first protrusions 426P that smoothly protrude toward the first through hole.
  • the contact area between the first inner wall 426w and the first probe 30 can be reduced. Therefore, friction between the probe penetrating member 423 and the first probe 30 can be reduced.
  • the first convex portion 426P protrudes smoothly and does not have corners, abrasion between the first probe 30 and the first inner wall 426w can be reduced.
  • FIG. 39 is a schematic top view showing part of the probe penetrating member 23 of the probe unit according to this modification.
  • the probe unit according to this modification differs from the probe unit 20 described above in the configuration of the first probe 430 .
  • the first probe 430 according to this modified example has a rectangular cross-sectional shape. Thereby, the contact area between the probe penetrating member 23 and the first probe 430 in the first through hole 26a can be reduced. Therefore, friction between the probe penetrating member 23 and the first probe 430 can be reduced.
  • the corners of the cross section of the first probe 430 may be formed in a smooth curved shape. Thereby, the wear of the first probe 430 and the probe penetrating member 23 can be reduced. Since the first probe 430 has a rectangular cross-sectional shape, it can be easily produced by etching or cutting a flat plate. This can also be used particularly in a probe unit as in Embodiment 4, which will be described later.
  • FIG. 40 is a schematic cross-sectional view showing part of the probe unit according to this modification.
  • FIG. 40 also shows a semiconductor laser device 80 as an example of an object to be inspected.
  • the probe unit according to this modified example differs from the probe unit according to modified example 1 in the configuration of the unit main body 521 and the second probe 140 .
  • a second probe 140 according to this modified example has a conductor 46 and an insulating film 48 .
  • the conductor 46 has the same configuration as the conductor 36 of the first probe 130
  • the insulating film 48 has the same configuration as the insulating film 38 of the first probe 130 . That is, the first probe 130 and the second probe 140 have the same configuration.
  • the unit main body 521 has a probe penetrating member 523 and a probe fixing member 524 .
  • the probe penetrating member 523 has a facing surface 521u that faces the object to be inspected, and a first upper surface 523a and a second upper surface 523b on the back side of the facing surface 521u.
  • the probe penetrating member 523 is formed with a first through hole 526a and a second through hole 526b.
  • the first through hole 526a penetrates vertically from the first upper surface 523a to the opposing surface 521u.
  • the second through hole 526b vertically penetrates from the second upper surface 523b to the opposing surface 521u.
  • the diameter of the first through hole 526a is larger than the diameter of the conductor 36 of the first probe 130 and smaller than the diameter of the portion of the first probe 130 where the insulating film 38 is formed.
  • the diameter of the second through hole 526b is larger than the diameter of the conductor 46 of the second probe 140 and smaller than the diameter of the portion of the second probe 140 where the insulating film 48 is formed.
  • the lower end of the portion of the first probe 130 where the insulating film 38 is formed is in contact with the upper surface (first upper surface 523a) of the first through hole 526a.
  • the lower end of the portion of the second probe 140 where the insulating film 48 is formed is in contact with the upper surface (second upper surface 523b) of the second through hole 526b.
  • the first upper surface 523a and the second upper surface 523b are different in vertical position, and the second upper surface 523b is located above the first upper surface 523a.
  • the probe fixing member 524 has a first lower surface 524a and a second lower surface 524b facing the probe penetrating member 523, and an upper surface 521t on the back side thereof.
  • the probe fixing member 524 is formed with a first fixing hole 527a and a second fixing hole 527b.
  • the first fixing hole 527a vertically penetrates from the upper surface 521t to the first lower surface 524a.
  • the second fixing hole 527b vertically penetrates from the upper surface 521t to the second lower surface 524b.
  • the diameter of the first fixing hole 527a is larger than the diameter of the conductor 36 of the first probe 130 and smaller than the diameter of the portion of the first probe 130 where the insulating film 38 is formed.
  • the diameter of the second fixing hole 527b is larger than the diameter of the conductor 46 of the second probe 140 and smaller than the diameter of the portion of the second probe 140 where the insulating film 48 is formed.
  • the upper end of the portion of the first probe 130 on which the insulating film 38 is formed is in contact with the lower surface (first lower surface 524a) of the first fixing hole 527a.
  • the upper end of the portion of the second probe 140 on which the insulating film 48 is formed is in contact with the lower surface (second lower surface 524b) of the second fixing hole 527b.
  • the first lower surface 524a and the second lower surface 524b have different vertical positions, and the second lower surface 524b is located above the first lower surface 524a.
  • the length of the portion where the insulating film 38 is not formed on the lower end 131 side of the first probe 130 and the length of the second probe 140 is also equal. Therefore, due to the difference in height between the first upper surface 523a and the second upper surface 523b of the probe penetrating member 523, the difference in the vertical position of the lower end 131 of the first probe 130 and the vertical position of the lower end 141 of the second probe 140 is It is determined.
  • the difference in the vertical position of the lower end 131 of the first probe 130 and the vertical position of the lower end 141 of the second probe 140 can be adjusted. Adjustable.
  • the height difference between the first upper surface 523 a and the second upper surface 523 b of the probe penetrating member 523 may be equal to the height difference between the first lower surface 524 a and the second lower surface 524 b of the probe fixing member 524 .
  • the length from the first upper surface 523a of the probe penetrating member 523 to the first lower surface 524a of the probe fixing member 524, and the length from the second upper surface 523b of the probe penetrating member 523 to the second lower surface 524b of the probe fixing member 524 The length may be equal to the length of the portion of the first probe 130 covered with the insulating film 38 (that is, the length of the portion of the second probe 140 covered with the insulating film 48).
  • FIGS. 41 to 43 are schematic side views showing the configuration of each probe of the probe unit according to this modified example.
  • FIGS. 41 to 43 also show the height adjusting member 50 and a semiconductor laser device 80 as an example of an object to be inspected.
  • the length L1 of the portion protruding from the facing surface 21u of the first probe 30, the length L2 of the portion protruding from the facing surface 21u of the second probe 40, the height H of the height adjustment member 50, and the semiconductor laser Various examples are conceivable for the relationship between the height d1 from the lower surface of the submount 84 of the device 80 to the first electrode and the height d2 from the lower surface of the submount 84 to the second electrode of the element 82 .
  • the height adjusting member 50 can be brought into contact with the stage 70 without physical interference between the semiconductor laser device 80 and the facing surface 21u.
  • FIGS. 41 to 43 show the relative position of the semiconductor laser device 80 with respect to the height adjustment member 50 when the height adjustment member 50 is in contact with the stage 70 by dashed lines. As shown in FIGS. 41 to 43, the height adjustment member 50 can be brought into contact with the stage 70 without physical interference between the semiconductor laser device 80 and the facing surface 21u.
  • FIG. 44 is a schematic cross-sectional view showing part of the probe unit according to this modification.
  • FIG. 44 also shows a detailed configuration of a semiconductor laser device 80 as an example of an inspection target.
  • the probe unit according to this modification differs from the probe unit 20 in the configurations of the first probe 230, the second probe 240, and the unit main body 621.
  • the semiconductor laser device 80 has a submount 84 and an element 82, as shown in FIG.
  • the submount 84 has a lower surface 84b and an upper surface 84a behind the lower surface 84b.
  • a first electrode 85 is arranged on the upper surface 84 a of the submount 84 .
  • the element 82 has an element lower surface 82b and an element upper surface 82a behind the element lower surface 82b. Element 82 is positioned on top surface 84 a of submount 84 . The element 82 has a second electrode 83 arranged on an upper surface 82a of the element.
  • Each semiconductor laser device 80 described above also has a detailed configuration as shown in FIG.
  • first probe 230 and the second probe 240 are the same.
  • first probe 230 and second probe 240 may be made of the same material.
  • the second probe 240 may be thinner than the first probe 230 .
  • the spring constant of the second probe 240 becomes smaller than the spring constant of the first probe 230, so damage to the second electrode 83 with which the second probe 240 contacts can be reduced.
  • the unit main body 621 has a probe penetrating member 623 and a probe fixing member 624 .
  • the probe penetrating member 623 has a facing surface 621u that faces the object to be inspected, and a first upper surface 623a and a second upper surface 623b on the back side of the facing surface 621u.
  • the probe penetrating member 623 is formed with a first through hole 626a and a second through hole 626b.
  • the first through hole 626a penetrates vertically from the first upper surface 623a to the opposing surface 621u.
  • the second through hole 626b penetrates vertically from the second upper surface 623b to the opposing surface 621u.
  • the first upper surface 623a and the second upper surface 623b have the same vertical position.
  • the probe fixing member 624 has a first lower surface 624a and a second lower surface 624b facing the probe penetrating member 623, and an upper surface 621t on the back side thereof.
  • the probe fixing member 624 is formed with a first fixing hole 627a and a second fixing hole 627b.
  • the first fixing hole 627a vertically penetrates from the upper surface 621t to the first lower surface 624a.
  • the second fixing hole 627b vertically penetrates from the upper surface 621t to the second lower surface 624b.
  • the first lower surface 624a and the second lower surface 624b have different vertical positions, and the second lower surface 624b is located above the first lower surface 624a.
  • the length from the probe fixing member 624 of the second probe 240 to the probe penetrating member 623 is the length from the probe fixing member 624 of the first probe 230 to the probe penetrating member 623. It can be longer than the length. This makes it easier for the second probe 240 to buckle than for the first probe 230 .
  • the spring constant of second probe 240 is smaller than the spring constant of first probe 230 . As a result, the elastic restoring force that accompanies the buckling of the second probe 240 can be reduced, so damage to the second electrode 83 with which the second probe 240 contacts can be reduced.
  • the first upper surface 623a and the second upper surface 623b have the same vertical position, but the second upper surface 623b may be arranged below the first upper surface 623a.
  • the length from the probe fixing member 624 of the second probe 240 to the probe penetrating member 623 can be further increased. Therefore, the elastic restoring force accompanying buckling of the second probe 240 can be further reduced.
  • FIG. 45 is a schematic cross-sectional view showing part of the probe unit according to this modification.
  • FIG. 45 also shows a detailed configuration of a semiconductor laser device 80 as an example of an inspection target.
  • the probe unit according to this modified example differs from the probe unit according to modified example 9 in the configuration of the first probe 330 and the second probe 340 .
  • the radius of curvature of the lower end 341 of the second probe 340 according to this modification is larger than the radius of curvature of the lower end 331 of the first probe 330 .
  • the second probe 340 may be thinner than the first probe 330.
  • the spring constant of the second probe 340 becomes smaller than the spring constant of the first probe 330, so damage to the second electrode 83 with which the second probe 340 contacts can be further reduced.
  • FIG. 46 and 47 are a schematic perspective view and a cross-sectional view, respectively, showing a first example of a penetrating member inclined surface 21s and a stage inclined surface 70s according to this embodiment.
  • FIG. 47 represents the cross section indicated by the dashed line in FIG.
  • FIG. 48 is a schematic cross-sectional view showing a second example of the penetrating member inclined surface 21s and the stage inclined surface 70s according to the present embodiment.
  • FIG. 46 and 47 are a schematic perspective view and a cross-sectional view, respectively, showing a first example of a penetrating member inclined surface 21s and a stage inclined surface 70s according to this embodiment.
  • FIG. 47 represents the cross section indicated by the dashed line in FIG.
  • FIG. 48 is a schematic cross-sectional view showing a second example of the penetrating member inclined surface 21s and the stage inclined surface 70s according to the present embodiment.
  • FIG. 49 is a schematic perspective view showing a third example of the penetrating member inclined surface 21s and the stage inclined surface 70s according to the present embodiment.
  • FIG. 50 is a schematic cross-sectional view showing a fourth example of the penetrating member inclined surface 21s according to the present embodiment.
  • a planar (that is, flat) penetrating member inclined surface is formed on a portion of the facing surface 21u that faces the laser beam LB from the semiconductor laser device 80. As shown in FIGS. 21s are formed. A planar stage inclined surface 70s is formed in a portion of the mounting surface 70a facing the laser beam LB from the semiconductor laser device 80. As shown in FIG.
  • the inclination angle ⁇ 2 of the penetrating member inclined surface 21s and the stage inclined surface 70s (with respect to the horizontal plane perpendicular to the vertical direction) varies depending on the vertical divergence angle ⁇ of the laser beam LB. may be determined.
  • the tilt angle ⁇ 2 may be set to about 23 degrees.
  • the inclination angle ⁇ 2 may be increased as in the second embodiment shown in FIG. This can reduce the physical interference of the measuring device 90 and the like with the stage 70 and the probe unit 20 .
  • the tilt angle ⁇ 2 may be 45 degrees or more.
  • the inclination angle ⁇ 2 may be 45 degrees or less. As a result, a maximum path for heat diffusion from the semiconductor laser device 80 to the stage 70 can be ensured. Therefore, the heat dissipation characteristics of the stage 70 can be enhanced.
  • the penetrating member inclined surface 21s and the stage inclined surface 70s are curved in accordance with the vertical divergence angle ⁇ 1 and the horizontal divergence angle ⁇ 2 of the laser beam LB. may have the shape of In the example shown in FIG. 49, the penetrating member inclined surface 21s and the stage inclined surface 70s have a side shape of an elliptical cone with the light emitting point of the semiconductor laser device 80 as the apex.
  • the first through hole 26a through which the first probe 30 penetrates penetrates the penetrating member inclined surface 21s.
  • the second through hole 26b through which the second probe 40 penetrates may penetrate through the penetrating member inclined surface 21s.
  • Embodiment 2 A probe unit according to Embodiment 2 will be described.
  • the probe unit according to this embodiment differs from the probe unit 20 according to the first embodiment in the shape of each probe.
  • the probe unit according to the present embodiment will be described below with reference to FIGS. 51 to 53, focusing on differences from the probe unit 20 according to the first embodiment.
  • FIG. 51 and 52 are a schematic top view and a cross-sectional view, respectively, showing the configuration of the probe unit 720 according to this embodiment.
  • FIG. 52 shows a cross section taken along line XXXXXII--XXXXII shown in FIG.
  • FIG. 53 is a schematic cross-sectional view showing a state in which the height adjustment member 50 arranged in the probe unit 720 according to this embodiment is brought into contact with the stage 70.
  • the probe unit 720 according to this embodiment differs from the probe unit 20 according to Embodiment 1 in the shapes of the first probe 30 and the second probe 40.
  • FIG. 51 the probe unit 720 according to this embodiment differs from the probe unit 20 according to Embodiment 1 in the shapes of the first probe 30 and the second probe 40.
  • the first probe 30 has a first deviation portion 34 that is deviated in the first deviation direction from the lower end 31 of the first probe 30 when viewed from above.
  • the first deflection direction is the positive Y-axis direction.
  • the first deflection portion 34 includes the upper end 32 of the first probe 30 and is inclined in the positive Y-axis direction with respect to the vertical direction.
  • the second probe 40 has a second deviation portion 44 that is deviated in the second deviation direction from the lower end 41 of the second probe 40 when viewed from above.
  • the second deflection direction is the Y-axis negative direction.
  • the second offset portion 44 includes the upper end 42 of the second probe 40 and is inclined in the Y-axis direction negative with respect to the vertical direction.
  • the first fixing hole 27a formed in the probe fixing member 24 of the probe unit 720 may be arranged at a position shifted from directly above the first through hole 26a, You may extend in the direction inclined with respect to the direction.
  • the second fixing hole 27b may be arranged at a position shifted from directly above the second through hole 26b, or may extend in a direction inclined with respect to the vertical direction.
  • the first probe 30 and the second probe 40 are pre-bent without coming into contact with the test object.
  • each probe can be easily buckled, so that the linearity of the elastic restoring force with respect to the amount of displacement of the lower end of each probe can be enhanced.
  • the dependence of the spring constant of each probe on the amount of displacement can be reduced. Therefore, it becomes easier to control the magnitude of the elastic restoring force.
  • the direction of buckling of each probe can be controlled.
  • the first deflection direction and the second deflection direction are non-parallel to the arrangement directions of the first probes 30 and the second probes 40 .
  • the direction of buckling of the first probe 30 is parallel to the first deflection direction
  • the direction of buckling of the second probe 40 is parallel to the second deflection direction
  • the buckling can suppress the displacement of the first probe 30 and the second probe 40 in their arrangement direction. Therefore, contact between the first probe 30 and the second probe 40 can be suppressed.
  • the first deflection direction is opposite to the second deflection direction. As a result, as shown in FIG.
  • the direction in which the first probe 30 is displaced by buckling (negative direction in the Y-axis direction) and the direction in which the second probe 40 is displaced by buckling (positive direction in the Y-axis direction) are different. Since the directions are reversed, contact can be suppressed when the first probe 30 and the second probe 40 are buckled.
  • the first probe 30 can suppress vibration in the direction parallel to the first deflection direction
  • the second probe 40 can suppress vibration in the direction parallel to the second deflection direction.
  • the first deflection direction and the second deflection direction may be parallel to the transport direction. As a result, vibration of each probe that accompanies transportation of the probe unit 720 can be suppressed.
  • the first deflection direction and the second deflection direction may be parallel to the direction of maximum acceleration during transportation of the inspection apparatus including the probe unit 720 .
  • each deflection orientation may be parallel to the tangential direction of the circumference.
  • Embodiment 3 A probe unit according to Embodiment 3 will be described.
  • the probe unit according to this embodiment differs from the probe unit 720 according to the second embodiment mainly in the deflection direction of each probe.
  • the probe unit according to the present embodiment will be described below with reference to FIGS. 54 and 55, focusing on differences from the probe unit 720 according to the second embodiment.
  • FIG. 54 is a schematic cross-sectional view showing the configuration of the probe unit 720a according to this embodiment.
  • FIG. 55 is a schematic cross-sectional view showing a state in which the unit contact surface 150b of the height adjustment member 150 arranged on the stage 70 according to this embodiment is brought into contact with the probe unit 720a.
  • the first deflection direction (X-axis direction negative direction) of the first probe 30 and the second deflection direction (X-axis direction negative direction) of the second probe 40 are the same. It is parallel to the arrangement direction (X-axis direction) of the first probes 30 and the second probes 40 .
  • the buckling directions of the first probe 30 and the second probe 40 are also the same. Therefore, even in such a configuration, contact between the first probe 30 and the second probe 40 can be suppressed.
  • the vertical interval ⁇ z between the first probe 30 and the second probe 40 may be increased. This configuration can be realized by making the pre-bent angle of the second probe 40 larger than the pre-bent angle of the first probe 30, or the like. Thereby, the contact between the first probe 30 and the second probe 40 can be further suppressed.
  • the height adjustment member 150 is arranged on the mounting surface 70 a of the stage 70 .
  • the unit main body 21 has a facing surface 21u that faces the height adjusting member 150 .
  • At least one of the unit contact surface 150b and the opposing surface 21u is a rough surface.
  • the unit contact surface 150b is a rough surface.
  • the height adjusting member 150 has a positioning portion 156 .
  • the positioning portion 156 is a member used for positioning the inspection object. For example, by pressing the inspection object against the positioning portion 156, the inspection object can be arranged at a predetermined position.
  • the probe unit 720a having the configuration described above, it is possible to suppress damage to the inspection target in the same manner as the probe unit 20 according to the first embodiment.
  • Embodiment 4 A probe unit according to Embodiment 4 will be described.
  • the probe unit according to this embodiment differs from the probe unit 720 according to the second embodiment mainly in the shape of each probe.
  • the probe unit according to the present embodiment will be described below with reference to FIGS. 56 and 57, focusing on differences from the probe unit 720 according to the second embodiment.
  • FIG. 56 is a schematic cross-sectional view showing the configuration of the probe unit 820 according to this embodiment.
  • FIG. 57 is a schematic cross-sectional view showing a state in which the height adjustment member 50 arranged in the probe unit 820 according to this embodiment is brought into contact with the stage 70.
  • FIG. 56 is a schematic cross-sectional view showing the configuration of the probe unit 820 according to this embodiment.
  • FIG. 57 is a schematic cross-sectional view showing a state in which the height adjustment member 50 arranged in the probe unit 820 according to this embodiment is brought into contact with the stage 70.
  • a probe unit 820 according to the present embodiment differs from the probe unit 720 according to Embodiment 2 in the shapes of the first probe 830 and the second probe 840 .
  • the first probe 830 has a first deviation portion 834 that is deviated in the first deviation direction from the lower end 831 of the first probe 830 in top view.
  • the distance between the position of the upper end 832 of the first probe 830 and the position of the lower end 831 in top view is zero. That is, the position of the upper end 832 and the position of the lower end 831 of the first probe 830 in top view match.
  • an axis 830A parallel to the vertical direction passes through the lower end 831 and the upper end 832 of the first probe 830 .
  • the first deflection portion 834 of the first probe 830 has a U-shape.
  • the first deflection direction is the positive direction in the X-axis direction.
  • the second probe 840 has a second deviation portion 844 that is deviated in the second deviation direction from the lower end 841 of the second probe 840 in top view.
  • the distance between the position of the upper end 842 of the second probe 840 and the position of the lower end 841 in top view is zero. That is, the position of the upper end 842 and the position of the lower end 841 of the second probe 840 in top view match.
  • an axis 840A parallel to the vertical direction passes through the lower end 841 and the upper end 842 of the second probe 840.
  • the second deflection portion 844 of the second probe 840 has a U-shape.
  • the second deflection direction is the negative direction of the X-axis.
  • each probe having such a configuration, when the lower end of each probe comes into contact with the test object and receives an upward force, deformation is concentrated near each deviation portion. Therefore, the displacement in the direction perpendicular to the up-down direction can be reduced in the portion corresponding to each through-hole of each probe. Therefore, friction between each probe and the probe penetrating member 23 can be reduced.
  • the first deflection direction and the second deflection direction are parallel to the arrangement directions of the first probe 830 and the second probe 840 .
  • the first deflection direction is the direction away from the second probe 840 and the second deflection direction is the direction away from the first probe 830, contact between the first probe 830 and the second probe 840 can be suppressed. .
  • Embodiment 5 A probe unit according to Embodiment 5 will be described.
  • the probe unit according to this embodiment differs from the probe unit 820 according to the fourth embodiment mainly in the deflection direction of each probe.
  • the probe unit according to the present embodiment will be described below with reference to FIGS. 58 to 60, focusing on differences from the probe unit 820 according to the fourth embodiment.
  • FIG. 58, 59, and 60 are a schematic top view, first cross-sectional view, and second cross-sectional view, respectively, showing the configuration of the probe unit 820a according to this embodiment.
  • FIG. 59 shows a cross section taken along line XXXXIX-XXXXXIX of FIG.
  • FIG. 60 shows a section taken along line XXXXX-XXXXX in FIG.
  • a probe unit 820a according to the present embodiment differs from the probe unit 820 according to the fourth embodiment in the direction of deflection of the first probe 830 and the second probe 840.
  • the first probe 830 has a first deviation portion 834 that is deviated in the first deviation direction from the lower end 831 of the first probe 830 in top view.
  • the first deflection direction is the positive Y-axis direction.
  • the second probe 840 has a second deviation portion 844 that is deviated in the second deviation direction from the lower end 841 of the second probe 840 in top view.
  • the second deflection direction is the positive Y-axis direction.
  • the first deflection direction and the second deflection direction are the same. However, in this embodiment, the first deflection direction and the second deflection direction are perpendicular to the alignment direction of the first probe 830 and the second probe 840 . Therefore, contact between the first probe 830 and the second probe 840 can be suppressed.
  • Embodiment 6 A probe unit according to Embodiment 6 will be described.
  • the probe unit according to this embodiment differs from the probe unit 720 according to the second embodiment mainly in the number of each probe.
  • the probe unit according to the present embodiment will be described below with reference to FIGS. 61 to 63, focusing on differences from the probe unit 720 according to the second embodiment.
  • FIG. 62 shows a cross section taken along line XXXXXII-XXXXXII of FIG.
  • FIG. 63 shows a cross section taken along line XXXXXIII-XXXXXIII of FIG.
  • a probe unit 920 according to the present embodiment differs from the probe unit 720 according to the second embodiment in the number of first probes 30 and second probes 40 .
  • the probe unit 920 includes a plurality of first probes 30 electrically connected in parallel with each other and a plurality of second probes 40 electrically connected in parallel with each other. 61-63, the probe unit 920 comprises six first probes 30 and three second probes 40.
  • the semiconductor laser device 80 to be inspected has the first electrodes arranged on both sides of the element 82 on the upper surface of the submount 84, namely, one side and the other side. Three first probes 30 are brought into contact with the electrodes, and three first probes 30 are also brought into contact with the other first electrode. Three second probes 40 are brought into contact with the second electrodes of the element 82 .
  • the force required to press down the semiconductor laser device 80 can be shared by the plurality of first probes 30 and the plurality of second probes 40, so that the force applied to the semiconductor laser device 80 by each probe can be reduced. . Therefore, damage to the semiconductor laser device 80 can be reduced.
  • each of the plurality of first probes 30 is tilted in the first deviation direction (positive Y-axis direction), and the plurality of Each of the second probes 40 is tilted in the second deflection direction (Y-axis direction negative direction). This can prevent the plurality of first probes 30 from coming into contact with each other, and can also prevent the plurality of second probes 40 from coming into contact with each other.
  • Embodiment 7 A probe unit according to Embodiment 7 will be described.
  • the probe unit according to the present embodiment differs from the probe unit 20 according to the first embodiment in that an elastic member is provided in addition to the probe.
  • the probe unit according to the present embodiment will be described below with reference to FIGS. 64 to 66, focusing on differences from the probe unit 20 according to the first embodiment.
  • FIG. 64 and 65 are a schematic top view and a cross-sectional view, respectively, showing the configuration of the probe unit 1020 according to this embodiment.
  • FIG. 65 shows a cross section taken along line XXXXXV-XXXXXV of FIG.
  • FIG. 66 is a schematic cross-sectional view showing a state in which the height adjustment member 50 arranged in the probe unit 1020 according to this embodiment is brought into contact with the stage 70.
  • a probe unit 1020 includes a first elastic mechanism 1035 and a second elastic mechanism 1045 fixed to the probe fixing member 24 .
  • the first elastic mechanism 1035 has a first elastic member 1037 fixed to the probe fixing member 24 and a first housing 1036 housing the first elastic member 1037 and fixed to the probe fixing member 24 .
  • the first elastic member 1037 is fixed to the probe fixing member 24 via the first housing 1036 .
  • the first elastic member 1037 is stretchable in directions including vertical components.
  • the first elastic member 1037 may be, for example, a helical spring.
  • the first probe 30 is fixed to the probe fixing member 24 via the first elastic member 1037 .
  • the second elastic mechanism 1045 has a second elastic member 1047 fixed to the probe fixing member 24 and a second housing 1046 housing the second elastic member 1047 and fixed to the probe fixing member 24 .
  • the second elastic member 1047 is fixed to the probe fixing member 24 via the second housing 1046 .
  • the second elastic member 1047 is stretchable in directions including vertical components.
  • the second elastic member 1047 may be, for example, a helical spring.
  • the second probe 40 is fixed to the probe fixing member 24 via the second elastic member 1047.
  • the first elastic member 1037 and the second elastic member 1047 are elastic in directions including vertical components, and the position of the upper end 32 and the lower end 31 of the first probe 30 when viewed from the top.
  • the distance between the positions and the distance between the position of the upper end 42 of the second probe 40 and the position of the lower end 41 are greater than zero.
  • the upper end 32 of the first probe 30 and the second probe 40 It is possible to make the distance between the top end 42 of the probe 40 greater than the distance between the bottom end 31 of the first probe 30 and the bottom end 41 of the second probe 40 . Therefore, it is possible to attach an elastic mechanism larger than the distance between the tips of each probe to the upper end of each probe.
  • the vicinity of the upper end of each probe is inclined by an angle ⁇ s with respect to the vertical direction. This increases the distance between the top end 32 of the first probe 30 and the top end 42 of the second probe 40 .
  • the first elastic member 1037 and the second elastic member 1047 may expand and contract in a direction inclined with respect to the vertical direction. This makes it possible to increase the distance between the first elastic member 1037 and the second elastic member 1047, so that an elastic mechanism larger than the distance between the tips of each probe can be attached to the upper end of each probe. Become.
  • the first probe and the second probe exhibit the buckling phenomenon, but only one of the first probe and the second probe may exhibit the buckling phenomenon.
  • the probe unit and the like of the present disclosure are particularly effective in the inspection of semiconductor laser devices and the like where slight damage poses a problem.
  • Reference Signs List 1 1a inspection system 5, 5a conveying device 10 inspection device 11 base 12 post 13, 15, 17 slide rail 14 vertical movement member 16 unit movement member 18 connection spring 19 unit support member 20, 720, 720a, 820, 820a, 920, 1020 probe unit 21, 521, 621 unit body 21s penetrating member inclined surface 21u, 521u, 621u opposing surface 21v cavity 23, 123, 223, 423, 523, 623 probe penetrating member 24, 524, 624 probe fixing member 26a, 126a, 226a, 426a, 526a, 626a First through hole 26b, 526b, 626b Second through hole 27a, 527a, 627a First fixing hole 27b, 527b, 627b Second fixing hole 28
  • Adhesive 30, 130, 130a , 230, 330, 430, 830 first probes 31, 41, 131, 141, 331, 341, 831, 841 lower ends 32, 42, 832, 842 upper ends 34, 834 first

Abstract

L'unité de sonde (20) de l'invention comprend une première sonde (30) et une seconde sonde (40) ayant une force de rappel élastique, un élément de fixation de sonde (24) auquel la première sonde (30) et la seconde sonde (40) sont fixées, et un élément de pénétration de sonde (23), disposé sous l'élément de fixation de sonde (24) et à distance de l'élément de fixation de sonde (24), et dans lequel sont formés un premier trou débouchant (26a) et un second trou débouchant (26b), à travers lesquels passent respectivement la première sonde (30) et la seconde sonde (40). L'élément de pénétration de sonde (23) présente une surface opposée (21u) qui s'oppose à un sujet d'inspection, la partie de la première sonde (30) et de la seconde sonde (40) faisant saillie vers le bas depuis la surface opposée (21u) peut se déplacer librement dans la direction verticale, et dans un état dans lequel la première sonde (30) et la seconde sonde (40) ne sont pas en contact avec le sujet d'inspection, une extrémité inférieure (31) de la première sonde (30) est positionnée plus bas qu'une extrémité inférieure (41) de la seconde sonde (40).
PCT/JP2023/005373 2022-02-18 2023-02-16 Unité de sonde, dispositif d'inspection, système d'inspection, procédé d'inspection et procédé de fabrication de dispositif laser à semi-conducteur WO2023157900A1 (fr)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63184076A (ja) * 1986-10-08 1988-07-29 Yokogawa Hewlett Packard Ltd 被試験ボードの取り付け装置
JPH0783797A (ja) * 1993-09-10 1995-03-31 Fujitsu Ltd 半導体レーザ変調分光試験方法およびそのための装置
KR20100138154A (ko) * 2009-06-24 2010-12-31 정영석 Ｌｅｄ용 전기적 검사장비
JP2011069829A (ja) * 1994-11-15 2011-04-07 Formfactor Inc プローブカード・アセンブリ及びキット、及びそれらを用いる方法
JP2015190942A (ja) * 2014-03-28 2015-11-02 株式会社ソシオネクスト 検査装置、検査方法及びプローブカード
JP2016130714A (ja) * 2015-01-15 2016-07-21 パイオニア株式会社 測定装置及び位置合わせ方法
JP2019179875A (ja) * 2018-03-30 2019-10-17 株式会社日本マイクロニクス プローバ
US20200225277A1 (en) * 2019-01-15 2020-07-16 Tzu-Yi Kuo Micro LED Display Panel

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63184076A (ja) * 1986-10-08 1988-07-29 Yokogawa Hewlett Packard Ltd 被試験ボードの取り付け装置
JPH0783797A (ja) * 1993-09-10 1995-03-31 Fujitsu Ltd 半導体レーザ変調分光試験方法およびそのための装置
JP2011069829A (ja) * 1994-11-15 2011-04-07 Formfactor Inc プローブカード・アセンブリ及びキット、及びそれらを用いる方法
KR20100138154A (ko) * 2009-06-24 2010-12-31 정영석 Ｌｅｄ용 전기적 검사장비
JP2015190942A (ja) * 2014-03-28 2015-11-02 株式会社ソシオネクスト 検査装置、検査方法及びプローブカード
JP2016130714A (ja) * 2015-01-15 2016-07-21 パイオニア株式会社 測定装置及び位置合わせ方法
JP2019179875A (ja) * 2018-03-30 2019-10-17 株式会社日本マイクロニクス プローバ
US20200225277A1 (en) * 2019-01-15 2020-07-16 Tzu-Yi Kuo Micro LED Display Panel

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