WO2023145589A1 - 熱硬化性樹脂フィルム、複合シート、半導体チップ、及び半導体チップの製造方法 - Google Patents

熱硬化性樹脂フィルム、複合シート、半導体チップ、及び半導体チップの製造方法 Download PDF

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Publication number
WO2023145589A1
WO2023145589A1 PCT/JP2023/001453 JP2023001453W WO2023145589A1 WO 2023145589 A1 WO2023145589 A1 WO 2023145589A1 JP 2023001453 W JP2023001453 W JP 2023001453W WO 2023145589 A1 WO2023145589 A1 WO 2023145589A1
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Prior art keywords
resin film
semiconductor chip
thermosetting resin
wafer
thermosetting
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English (en)
French (fr)
Japanese (ja)
Inventor
友尭 森下
圭亮 四宮
玲菜 貝沼
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Lintec Corp
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Lintec Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/141—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being on at least the sidewalls of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/607—Located on parts of packages, e.g. on encapsulations or on package substrates

Definitions

  • the present invention relates to a thermosetting resin film, a composite sheet, a semiconductor chip, and a method for manufacturing a semiconductor chip. More specifically, the present invention provides a thermosetting resin film, a composite sheet comprising the thermosetting resin film, a semiconductor chip provided with a cured resin film as a protective film by using these, and the semiconductor It relates to a method of manufacturing a chip.
  • semiconductor devices have been manufactured using a so-called face-down mounting method.
  • a semiconductor chip having bumps on its circuit surface and a substrate for mounting the semiconductor chip are laminated so that the circuit surface of the semiconductor chip and the substrate face each other, thereby mounting the semiconductor chip. It is mounted on the board.
  • the semiconductor chip is usually obtained by singulating a semiconductor wafer having bumps on its circuit surface.
  • a semiconductor wafer provided with bumps is sometimes provided with a protective film for the purpose of protecting the joint portion between the bump and the semiconductor wafer (hereinafter also referred to as "bump neck”).
  • a protective film for the purpose of protecting the joint portion between the bump and the semiconductor wafer (hereinafter also referred to as "bump neck”).
  • a laminate obtained by laminating a support base material, an adhesive layer, and a thermosetting resin layer in this order is laminated with the thermosetting resin layer as a bonding surface
  • the protective film is formed by applying pressure to the bump forming surface of the semiconductor wafer having the bumps and then heating and curing the thermosetting resin layer.
  • the present inventors found a method of improving the strength of the semiconductor chip and suppressing peeling of the protective film by providing the protective film not only on the bump forming surface of the semiconductor chip but also on the side surfaces thereof.
  • One aspect of the protective film forming method will be described with reference to FIGS. 3 to 7.
  • the groove portion 23 as a line to be divided reaches the bump forming surface 21a of the semiconductor wafer 21 having the bump forming surface 21a having the bumps 22 and the rear surface 21b of the semiconductor wafer 21.
  • a wafer 30 for semiconductor chip fabrication which is formed without a wafer, is prepared.
  • the curable resin film X1 with the release sheet Y1 is pressed onto the bump forming surface 21a of the semiconductor chip fabrication wafer 30 with the curable resin film X1 as the bonding surface.
  • the bump formation surface 21a of the semiconductor chip fabrication wafer 30 is covered with the curable resin film X1, and the grooves 23 formed in the semiconductor chip fabrication wafer 30 are filled with the curable resin film X1.
  • the release sheet Y1 is peeled off, the curable resin film X1 is cured to form a cured resin film r1, and a semiconductor chip manufacturing wafer 30 with the cured resin film r1 is obtained. obtain.
  • the semiconductor chip fabrication wafer 30 with the cured resin film r1 is singulated along the scheduled division lines, and at least the bump forming surface 21a and the side surfaces are covered with the cured resin film r1.
  • a semiconductor chip 40 is obtained.
  • the rear surface 21b of the semiconductor chip fabrication wafer 30 is ground so that at least the bottom of the groove 23 of the semiconductor chip fabrication wafer 30 is exposed (“BG” in FIG. 7 means back grinding). do.).
  • the grooves 23 defined by the grooves 23 that are the planned division lines are used to determine the cutting positions. It is necessary to recognize the cut groove (hereinafter also referred to as "kerf") from the bump forming surface 21a side.
  • kerf cut groove
  • the groove portion 23 and the bump forming surface 21a are covered with the cured resin film r1
  • the cured resin film r1 has low transparency, it becomes difficult to recognize the kerf, and the cutting position for singulation is determined. I have a problem that I can't.
  • the curable resin film for forming the protective film it is required to suppress the occurrence of warpage due to curing shrinkage that occurs when the film is cured while attached to an inorganic material such as a semiconductor wafer.
  • an inorganic material such as a semiconductor wafer.
  • the present invention has been made in view of the above problems, and is used for forming a cured resin film as a protective film on both the bump forming surface and the side surfaces of a semiconductor chip having a bump forming surface provided with bumps. , a thermosetting resin film excellent in kerf recognition and low warpage of the cured resin film, a composite sheet comprising the thermosetting resin film, and a semiconductor chip having a protective film formed using the thermosetting resin film and a method for manufacturing the semiconductor chip.
  • thermosetting resin film used for forming a cured resin film as a protective film on both the bump forming surface and the side surface of a semiconductor chip having a bump forming surface provided with bumps
  • epoxy resin (i) has an epoxy equivalent of 250 g/eq or more.
  • Method for measuring transmittance The thermosetting resin film was attached to a glass plate with a thickness of 1 mm, and the glass plate with the cured resin film obtained by heating and curing for 240 minutes under conditions of a temperature of 130 ° C. and a pressure of 0.5 MPa was measured. As an object, the transmittance at a wavelength of 600 nm in the thickness direction is measured.
  • thermosetting resin film according to any one of the above [1] to [3] is pressed and adhered to the bump forming surface of the wafer for semiconductor chip fabrication, and the a step of covering the bump forming surface with the thermosetting resin film and embedding the thermosetting resin film into the grooves formed in the wafer for semiconductor chip fabrication Step (S3): removing the thermosetting resin film Step (S4): Individualize the wafer for semiconductor chip production with a cured resin film by thermal curing to obtain a wafer for semiconductor chip production with a cured resin film; a step of obtaining a semiconductor chip whose side surface is covered with the cured resin film; A method for manufacturing a semiconductor chip, including the following step (S-BG) in the above step (S4).
  • thermosetting resin film excellent in low warpage a composite sheet comprising the thermosetting resin film, a semiconductor chip having a protective film formed using the thermosetting resin film, and a method for manufacturing the semiconductor chip can provide.
  • FIG. 1 is a schematic cross-sectional view showing the configuration of a composite sheet in one embodiment of the present invention
  • FIG. 4 is a schematic cross-sectional view showing the configuration of a composite sheet in another embodiment of the invention
  • FIG. 4 is a schematic cross-sectional view showing an example of a semiconductor chip fabrication wafer prepared in step (S1); It is a figure which shows the outline of a process (S2). It is a figure which shows the outline of a process (S3). It is a figure which shows the outline of a process (S4).
  • FIG. 4 is a diagram showing an outline of a step (S-BG); 1 is an image of a grooved wafer with a cured resin film formed using the thermosetting resin film of Example 1, taken from the cured resin film side. 4 is an image of a grooved wafer with a cured resin film formed using the thermosetting resin film of Comparative Example 1, taken from the cured resin film side.
  • the term “active ingredient” refers to the components contained in the target composition, excluding diluent solvents such as water and organic solvents.
  • (meth)acrylic acid indicates both “acrylic acid” and “methacrylic acid”, and the same applies to other similar terms.
  • a weight average molecular weight and a number average molecular weight are polystyrene conversion values measured by a gel permeation chromatography (GPC) method.
  • the lower limit and upper limit values described stepwise for preferred numerical ranges can be independently combined. For example, from the statement “preferably 10 to 90, more preferably 30 to 60", combining "preferred lower limit (10)” and “more preferred upper limit (60)” to "10 to 60” can also
  • thermosetting resin film is A thermosetting resin film used for forming a cured resin film as a protective film on both the bump-forming surface and the side surface of a semiconductor chip having a bump-forming surface with bumps, the thermosetting resin film containing a naphthalene ring and epoxy A thermosetting resin film containing an epoxy resin (i) having an equivalent weight of 200 g/eq or more.
  • the thickness of the thermosetting resin film of the present embodiment is preferably 30 ⁇ m or more, more preferably 40 ⁇ m or more, and still more preferably 45 ⁇ m or more, from the viewpoint of good filling properties in the grooves.
  • the thickness of the thermosetting resin film is preferably 250 ⁇ m or less, more preferably 200 ⁇ m or less, and still more preferably 150 ⁇ m or less, from the viewpoint of suppressing contamination due to oozing out during application.
  • the above thickness can be appropriately adjusted because the volume of the resin to be filled varies depending on the depth and width of the grooves provided in the semiconductor chip fabrication wafer.
  • the "thickness of the thermosetting resin film” means the thickness of the entire thermosetting resin film. means the total thickness of all the layers that make up the
  • the cured product of the thermosetting resin film of the present embodiment preferably has high transmittance from the viewpoint of further improving kerf recognition.
  • the thermosetting resin film of the present embodiment preferably has a transmittance of 50% or more, more preferably 52% or more, and still more preferably 54% or more at a wavelength of 600 nm measured under the following conditions. be.
  • the thermosetting resin film of the present embodiment preferably has a transmittance of 60% or more, more preferably 70% or more, and still more preferably 80% or more at a wavelength of 900 nm measured under the following conditions.
  • thermosetting resin film is attached to a glass plate with a thickness of 1 mm, and the glass plate with a cured resin film is obtained by heating and curing for 240 minutes under conditions of a temperature of 130 ° C and a pressure of 0.5 MPa.
  • the transmittance at a wavelength of 600 nm or 900 nm in the thickness direction is measured. More specifically, the transmittance can be measured by the method described in Examples.
  • the upper limit of the transmittance at a wavelength of 600 nm or 900 nm determined by the above measurement method is not particularly limited, and may be 100% or less or 90% or less.
  • the thermosetting resin film of the present embodiment is a film used to cover the bump formation surface of the wafer for semiconductor chip production and to fill the grooves formed in the wafer for semiconductor chip production, and is cured by heating. to form a cured resin film.
  • the thermosetting resin film contains a polymer component (A) and a thermosetting component (B), and preferably contains an epoxy resin (i) as the thermosetting component (B).
  • the thermosetting resin film is formed, for example, from a thermosetting resin composition containing a polymer component (A) and a thermosetting component (B).
  • the polymer component (A) is a component that can be regarded as being formed by a polymerization reaction of a polymerizable compound.
  • thermosetting component (B) is a component that can undergo a curing (polymerization) reaction with heat as a reaction trigger.
  • the curing (polymerization) reaction also includes a polycondensation reaction.
  • the content of each component in the total amount of active ingredients of the thermosetting resin composition means “the content of the thermosetting resin film formed from the thermosetting resin composition. It is synonymous with "the content of each component”.
  • thermosetting resin film and a thermosetting resin composition contain a polymer component (A).
  • the polymer component (A) is a polymer compound for imparting film-forming properties, flexibility, etc. to the thermosetting resin film.
  • the polymer component (A) may be used alone or in combination of two or more. When two or more polymer components (A) are used in combination, their combination and ratio can be arbitrarily selected.
  • polymer component (A) examples include acrylic resins, polyarylate resins, polyvinyl acetal, polyesters, urethane resins (resins having urethane bonds), acrylic urethane resins, silicone resins (resins having siloxane bonds), Examples thereof include rubber-based resins (resins having a rubber structure), phenoxy resins, and thermosetting polyimides.
  • acrylic resins, polyarylate resins, and polyvinyl acetal are preferred.
  • acrylic resins include known acrylic polymers.
  • the weight average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, more preferably 300,000 to 1,500,000, and 500,000 to 1,000. ,000 is more preferred.
  • the weight average molecular weight of the acrylic resin is at least the above lower limit, the shape stability (stability over time during storage) of the thermosetting resin film can be easily improved.
  • the weight average molecular weight of the acrylic resin is equal to or less than the above upper limit, the thermosetting resin film easily follows the uneven surface of the adherend. It is easy to suppress the generation of voids and the like between Therefore, the coverage of the surface of the semiconductor wafer on which bumps are formed is improved, and the embedding of the grooves can be easily improved.
  • the glass transition temperature (Tg) of the acrylic resin is preferably ⁇ 60 to 70° C., more preferably ⁇ 40 to 50° C., from the viewpoint of the adhesiveness and handling properties of the thermosetting resin film. -30°C to 30°C is more preferred.
  • acrylic resins include polymers of one or more (meth)acrylic acid esters; and copolymers of two or more monomers.
  • Examples of the (meth)acrylic acid ester constituting the acrylic resin include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, (meth)acrylate, n-butyl acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, (meth)acrylic acid heptyl, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, Undecyl (meth)acrylate, dodecyl
  • a (meth)acrylic acid alkyl ester having a chain structure having 1 to 18 carbon atoms Cycloalkyl (meth)acrylates such as isobornyl (meth)acrylate and dicyclopentanyl (meth)acrylate; (meth)acrylic acid aralkyl ester such as benzyl (meth)acrylate; (meth)acrylic acid cycloalkenyl ester such as (meth)acrylic acid dicyclopentenyl ester; (meth)acrylic acid cycloalkenyloxyalkyl ester such as (meth)acrylic acid dicyclopentenyloxyethyl ester; (meth)acrylic acid imide; glycidyl group-containing (meth)acrylic acid esters such as glycidyl (meth)acrylate; Hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl
  • a "substituted amino group” means a group in which one or two hydrogen atoms of an amino group are substituted with groups other than hydrogen atoms.
  • the alkyl group constituting the alkyl ester has 1 carbon atom.
  • a coalescence is more preferred, and a copolymer combining butyl acrylate, methyl acrylate, glycidyl acrylate, and 2-hydroxyethyl acrylate is even more preferred.
  • the acrylic resin is, for example, a copolymer of one or more monomers selected from (meth)acrylic acid ester, (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, N-methylolacrylamide, and the like. It can be anything.
  • the monomers constituting the acrylic resin may be of one type alone, or may be of two or more types. When two or more kinds of monomers constitute the acrylic resin, the combination and ratio thereof can be arbitrarily selected.
  • Examples of the polyarylate resin in the polymer component (A) include known ones, and examples thereof include resins having a basic structure of polycondensation of a dihydric phenol and a dibasic acid such as phthalic acid or carboxylic acid. . Among them, polycondensation products of bisphenol A and phthalic acid, poly 4,4'-isopropylidenediphenylene terephthalate/isophthalate copolymers, derivatives thereof, and the like are preferable.
  • polyvinyl acetal in the polymer component (A) examples include known ones. Among them, preferred polyvinyl acetals include, for example, polyvinyl formal and polyvinyl butyral, with polyvinyl butyral being more preferred. Examples of polyvinyl butyral include those having structural units represented by the following formulas (i)-1, (i)-2 and (i)-3.
  • the weight average molecular weight (Mw) of polyvinyl acetal is preferably 5,000 to 200,000, more preferably 8,000 to 100,000.
  • the shape stability (stability over time during storage) of the thermosetting resin film can be easily improved.
  • the weight average molecular weight of the polyvinyl acetal is equal to or less than the above upper limit, the thermosetting resin film easily follows the uneven surface of the adherend. It is easy to suppress the generation of voids and the like between them. Therefore, the coverage of the surface of the semiconductor wafer on which bumps are formed is improved, and the embedding of the grooves can be easily improved.
  • the glass transition temperature (Tg) of polyvinyl acetal is preferably 40 to 80° C., more preferably 50 to 70° C., from the viewpoints of thermosetting resin film-forming properties and bump top protrusion properties. more preferred.
  • bump top protrusion property refers to the ability of a bump to penetrate a thermosetting resin film when the thermosetting resin film is attached to a wafer with bumps. Also called parietal penetrability.
  • the ratio of the three or more monomers that constitute the polyvinyl acetal can be selected arbitrarily.
  • the content of the polymer component (A) is preferably 2 to 30% by mass, more preferably 3 to 25% by mass, based on the total amount of active ingredients in the thermosetting resin composition, and 3 to It is more preferably 15% by mass, and even more preferably 3 to 10% by mass.
  • the polymer component (A) may also correspond to the thermosetting component (B) described later.
  • the thermosetting resin composition when the thermosetting resin composition contains components corresponding to both the polymer component (A) and the thermosetting component (B), the thermosetting resin composition is a polymer It is considered to contain both component (A) and thermosetting component (B).
  • thermosetting component (B) is a component for thermosetting the thermosetting resin film to form a hard cured resin film.
  • the thermosetting component (B) contains at least epoxy resin (i).
  • the thermosetting component (B) may be used alone or in combination of two or more. When two or more thermosetting components (B) are used, their combination and ratio can be selected arbitrarily.
  • thermosetting component (B) an epoxy thermosetting resin composed of an epoxy resin (B1) containing the epoxy resin (i) and a thermosetting agent (B2) is preferable.
  • Epoxy resin (B1) contains epoxy resin (i).
  • Examples of epoxy resin (i) or epoxy resin (B1) other than epoxy resin (i) include bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolac type epoxy resin, glycidyl ester type epoxy resin, and biphenyl type epoxy resin. , phenylene skeleton type epoxy resin, orthocresol novolak epoxy resin, dicyclopentadiene type epoxy resin, naphthalene type epoxy resin, anthracene type epoxy resin, fluorene skeleton type epoxy resin, and the like. Among these, naphthalene-type epoxy resins are preferable from the viewpoint of low warpage.
  • naphthalene-type epoxy resin means an epoxy resin containing a naphthalene ring in the molecule.
  • naphthalene type epoxy resins include diglycidyloxynaphthalene, naphthol novolac type epoxy resins, naphthol aralkyl type epoxy resins, and methoxynaphthalene/cresol formaldehyde cocondensation type epoxy resins.
  • Epoxy resin (i) is an epoxy resin containing a naphthalene ring and having an epoxy equivalent of 200 g/eq or more. Since the epoxy resin (i) contains a naphthalene ring, the cured resin film formed from the thermosetting resin film of the present embodiment is excellent in low warpage. Further, since the epoxy resin (i) contains a naphthalene ring and has an epoxy equivalent of 200 g/eq or more, the cured resin film formed from the thermosetting resin film of the present embodiment has low warpage The kerf recognizability is excellent as well as the property. This is partly because the epoxy equivalent weight of the epoxy resin (i) is 200 g/eq or more, which increases the distance between cross-links, suppresses whitening caused by stacking of naphthalene rings, and improves transparency. It is speculated that
  • the epoxy equivalent of the epoxy resin (i) is preferably 210 g/eq or more, more preferably 230 g/eq or more, still more preferably 250 g/eq or more, from the viewpoint of further improving kerf recognition.
  • the epoxy equivalent of the epoxy resin (i) is preferably 450 g/eq or less, more preferably 400 g/eq or less, and even more preferably 350 g/eq or less, from the viewpoint of further improving low warpage properties.
  • the epoxy equivalent in this embodiment can be measured according to JIS K 7236:2009.
  • the epoxy resin (i) is preferably a methoxynaphthalene/cresol-formaldehyde co-condensation type epoxy resin.
  • the content of the epoxy resin (i) in the epoxy resin (B1) is preferably 80 to 100% by mass, more preferably 90 to 100% by mass, from the viewpoint of further improving kerf recognition. , more preferably 95 to 100% by mass.
  • the content of the epoxy resin (i) in the thermosetting resin composition is preferably 5 to 50% by mass, more preferably 10 to 40% by mass, based on the total amount of active ingredients in the thermosetting resin composition. is more preferable, and 15 to 30% by mass is even more preferable.
  • the epoxy resin (B1) is not particularly limited; It is preferable to use a combination of epoxy resins (hereinafter also referred to as liquid epoxy resins).
  • the epoxy resin (i) may be a solid epoxy resin or a liquid epoxy resin, but is preferably a solid epoxy resin.
  • "ordinary temperature” refers to 5 to 35°C, preferably 15 to 25°C.
  • the liquid epoxy resin is not particularly limited as long as it is liquid at room temperature.
  • Examples include bisphenol A epoxy resin, bisphenol F epoxy resin, novolak epoxy resin, glycidyl ester epoxy resin, biphenyl epoxy resin, and phenylene. Skeletal type epoxy resins and the like can be mentioned. Among these, bisphenol A type epoxy resins are preferred.
  • One liquid epoxy resin may be used alone, or two or more may be used in combination. When two or more types of liquid epoxy resins are used, their combination and ratio can be arbitrarily selected.
  • the epoxy equivalent of the liquid epoxy resin is preferably 200-600 g/eq, more preferably 250-550 g/eq, still more preferably 300-500 g/eq.
  • the solid epoxy resin is not particularly limited as long as it is solid at room temperature.
  • Epoxy resins, naphthalene-type epoxy resins, anthracene-type epoxy resins, fluorene skeleton-type epoxy resins, and the like can be mentioned.
  • naphthalene-type epoxy resins are preferable, and among the epoxy resins (i) described above, those in solid form are more preferable.
  • Solid epoxy resins may be used singly or in combination of two or more. When two or more solid epoxy resins are used, their combination and ratio can be selected arbitrarily.
  • the epoxy equivalent of the solid epoxy resin is preferably 150-450 g/eq, more preferably 150-400 g/eq.
  • the epoxy equivalent of the epoxy resin (i) is 200 g/eq or more, and the preferred range is also as described in the above "epoxy equivalent of the epoxy resin (i)". is.
  • the ratio of the content of the liquid epoxy resin (x) to the content of the solid epoxy resin (y) [(x)/(y)] is preferably 0.2 to 10.0 in mass ratio. , more preferably 0.3 to 8.0, still more preferably 0.4 to 6.0, still more preferably 0.6 to 3.0.
  • the ratio [(x)/(y)] is within the above range, it is possible to suppress the generation of shavings and the like when cutting the cured resin film with a dicing blade, making it easier to improve workability. .
  • the number average molecular weight of the epoxy resin (B1) is not particularly limited, but from the viewpoint of the curability of the thermosetting resin film and the strength and heat resistance of the cured resin film after curing, it is preferably 300 to 30,000. It is preferably from 400 to 10,000, and even more preferably from 500 to 3,000.
  • thermosetting agent (B2) functions as a curing agent for the epoxy resin (B1).
  • thermosetting agent (B2) include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule.
  • the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and an anhydrided group of an acid group. is preferably a group, more preferably a phenolic hydroxyl group or an amino group.
  • thermosetting agents (B2) phenol-based curing agents having phenolic hydroxyl groups include, for example, polyfunctional phenol resins, biphenols, novolak-type phenol resins, dicyclopentadiene-based phenol resins, and aralkylphenol resins. .
  • amine-based curing agents having an amino group include, for example, dicyandiamide (hereinafter sometimes abbreviated as "DICY”) and the like.
  • DIY dicyandiamide
  • a phenol-based curing agent having a phenolic hydroxyl group is preferable, and a novolac-type phenol resin is more preferable, from the viewpoint of making it easier to exhibit the effects of the present invention.
  • thermosetting agent (B2) the number average molecular weight of resin components such as polyfunctional phenolic resins, novolak phenolic resins, dicyclopentadiene phenolic resins, and aralkylphenolic resins is 300 to 30,000. is preferred, 400 to 10,000 is more preferred, and 500 to 3,000 is even more preferred.
  • the molecular weight of non-resin components such as biphenol and dicyandiamide is not particularly limited, but is preferably 60 to 500, for example.
  • thermosetting agent (B2) may be used alone or in combination of two or more. When two or more thermosetting agents (B2) are used, their combination and ratio can be arbitrarily selected.
  • the content of the thermosetting agent (B2) is preferably 1 to 200 parts by mass, more preferably 5 to 150 parts by mass, with respect to 100 parts by mass of the epoxy resin (B1). is more preferably 10 to 100 parts by mass, even more preferably 15 to 77 parts by mass, and even more preferably 20 to 50 parts by mass.
  • the content of the thermosetting agent (B2) is at least the above lower limit, curing of the thermosetting resin film proceeds more easily.
  • the content of the thermosetting agent (B2) is the above upper limit or less, the moisture absorption rate of the thermosetting resin film is reduced, and the reliability of the package obtained using the thermosetting resin film is better.
  • the total content of the epoxy resin (B1) and the thermosetting agent (B2) is less than 100 parts by mass of the polymer component (A) from the viewpoint of enhancing the protective properties of the cured resin film.
  • it is preferably 200 to 3,000 parts by mass, more preferably 300 to 2,000 parts by mass, even more preferably 400 to 1,500 parts by mass, and 500 to 1,300 parts by mass. Part is even more preferable.
  • the thermosetting resin film and the thermosetting resin composition may contain a curing accelerator (C) together with the epoxy resin (B1) and thermosetting agent (B2).
  • the curing accelerator (C) is a component for adjusting the curing speed of the thermosetting resin composition.
  • Preferred curing accelerators (C) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol; 2-methylimidazole, 2-phenylimidazole.
  • 2-phenyl-4-methylimidazole 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole (one or more hydrogen atoms other than hydrogen atoms) imidazole substituted with a group); organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine (phosphines in which one or more hydrogen atoms are substituted with an organic group); tetraphenylphosphonium tetraphenylborate, triphenylphosphine Tetraphenylboron salts such as tetraphenylborate and the like are included.
  • imidazoles are preferred, and 2-phenyl-4,5-dihydroxymethylimidazole is more preferred, from the viewpoint of making it easier to exhibit the effects of the present invention.
  • the curing accelerator (C) may be used alone or in combination of two or more. When two or more curing accelerators (C) are used, their combination and ratio can be selected arbitrarily.
  • the content of the curing accelerator (C) is 100 parts by mass of the total content of the epoxy resin (B1) and the thermosetting agent (B2). On the other hand, it is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, even more preferably 0.2 to 1 part by mass.
  • the content of the curing accelerator (C) is at least the above lower limit, the effect of using the curing accelerator (C) can be more remarkably obtained.
  • the highly polar curing accelerator (C) can be added to the thermosetting resin film under high temperature and high humidity conditions. The effect of suppressing segregation by moving to the adhesive interface side with the adherend is increased, and the reliability of the package obtained using the thermosetting resin film is further improved.
  • the thermosetting resin film and thermosetting resin composition may contain a filler (D).
  • a filler (D) By containing the filler (D), it becomes easier to adjust the thermal expansion coefficient of the cured resin film obtained by curing the thermosetting resin film to an appropriate range, and The package reliability is further improved.
  • the filler (D) in the thermosetting resin film the moisture absorption rate of the cured resin film can be reduced and the heat dissipation can be improved.
  • the filler (D) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.
  • Preferable inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, iron oxide, silicon carbide, boron nitride; beads obtained by spheroidizing these inorganic fillers; and surface modification of these inorganic fillers. products; single crystal fibers of these inorganic fillers; glass fibers and the like.
  • the inorganic filler is preferably silica or alumina from the viewpoint of making it easier to exhibit the effects of the present invention.
  • the filler (D) may be used alone or in combination of two or more. When two or more fillers (D) are used, their combination and ratio can be arbitrarily selected.
  • the content of the filler (D) is the total amount of the active ingredient of the thermosetting resin composition from the viewpoint of suppressing the peeling of the cured resin film from the chip due to thermal expansion and thermal contraction. It is preferably 5 to 50% by mass, more preferably 7 to 40% by mass, and even more preferably 10 to 35% by mass.
  • the average particle size of the filler (D) is preferably 5 nm to 1,000 nm, more preferably 5 nm to 500 nm, even more preferably 10 nm to 300 nm.
  • the above average particle size is obtained by measuring the outer diameter of one particle at several points and calculating the average value thereof.
  • thermosetting resin film and the thermosetting resin composition may contain an energy ray-curable resin (E). Since the thermosetting resin film contains the energy ray-curable resin (E), the properties can be changed by energy ray irradiation.
  • energy ray means an electromagnetic wave or charged particle beam that has an energy quantum, and examples thereof include ultraviolet rays, electron beams, etc., preferably ultraviolet rays.
  • the energy ray-curable resin (E) is obtained by polymerizing (curing) an energy ray-curable compound.
  • energy ray-curable compounds include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth)acryloyl group are preferred.
  • acrylate compounds include trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, ) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate chain aliphatic skeleton-containing (meth) acrylate; dicyclo Cycloaliphatic skeleton-containing (meth)acrylates such as pentanyl di(meth)acrylate; polyalkylene glycol (meth)acrylates such as polyethylene glycol di(meth)acrylate; oligoester (meth)acrylates; ure
  • the weight average molecular weight of the energy ray-curable compound is preferably 100-30,000, more preferably 300-10,000.
  • the energy ray-curable compound used for polymerization may be used singly or in combination of two or more. When two or more energy ray-curable compounds are used for polymerization, their combination and ratio can be arbitrarily selected.
  • the content of the energy ray-curable resin (E) is preferably 1 to 95% by mass based on the total amount of active ingredients in the thermosetting resin composition. , more preferably 5 to 90% by mass, and even more preferably 10 to 85% by mass.
  • thermosetting resin film and the thermosetting resin composition contain the energy ray-curable resin (E)
  • thermosetting resin film And the thermosetting resin composition may contain a photopolymerization initiator (F).
  • Examples of the photopolymerization initiator (F) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, 2,4 -diethylthioxanthone, 1-hydroxycyclohexylphenyl ketone, benzyldiphenylsulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl, 1,2-diphenylmethane, 2-hydroxy-2-methyl-1- Examples include [4-(1-methylvinyl)phenyl]propanone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, and 2-chloroanthraquinone.
  • the photopolymerization initiator (F) may be used alone or in combination of two or more. When two or more photopolymerization initiators (F) are used, their combination and ratio can be arbitrarily selected.
  • the content of the photopolymerization initiator (F) is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the energy ray-curable resin (E). , more preferably 1 to 10 parts by mass, more preferably 2 to 5 parts by mass.
  • thermosetting resin film and the thermosetting resin composition may contain an additive (G) within a range that does not impair the effects of the present invention.
  • the additive (G) may be a known one, can be arbitrarily selected according to the purpose, and is not particularly limited.
  • Preferred additives (G) include, for example, coupling agents, cross-linking agents, surfactants, plasticizers, antistatic agents, antioxidants, leveling agents, gettering agents, and the like.
  • the additive (G) may be used alone or in combination of two or more. When two or more additives (G) are used, their combination and ratio can be arbitrarily selected.
  • the content of the additive (G) is not particularly limited, and may be appropriately selected depending on the purpose.
  • the thermosetting resin composition preferably further contains a solvent.
  • a thermosetting resin composition containing a solvent is easy to handle.
  • the solvent is not particularly limited, preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol) and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone;
  • a solvent may be used individually by 1 type, and may be used in combination of 2 or more type. When two or more solvents are used, their combination and ratio can be arbitrarily selected.
  • the solvent is preferably methyl ethyl ketone or the like from the viewpoint that the components contained in the thermosetting resin composition can be more uniform
  • thermosetting resin composition is prepared by blending each component for constituting the composition. There are no particular restrictions on the order of addition of each component when blending, and two or more components may be added at the same time.
  • the solvent may be used by mixing it with any compounding component other than the solvent and diluting this compounding component in advance, or any compounding component other than the solvent may be used in advance. Solvents may be used by mixing with these ingredients without dilution.
  • the method of mixing each component at the time of blending is not particularly limited, and may be selected from known methods such as a method of mixing by rotating a stirrer or stirring blade; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves. It can be selected as appropriate.
  • the temperature and time at which each component is added and mixed are not particularly limited as long as each compounded component does not deteriorate, and may be adjusted as appropriate, but the temperature is preferably 15 to 30°C.
  • thermosetting resin film of one embodiment of the present invention may be a composite sheet having a laminated structure in which the thermosetting resin film and a release sheet are laminated.
  • the thermosetting resin film can be stably supported when transporting the thermosetting resin film as a product package or during the manufacturing process of semiconductor chips. ⁇ It is protected.
  • FIG. 1 is a schematic cross-sectional view showing the structure of a composite sheet according to one embodiment of the invention
  • FIG. 2 is a schematic cross-sectional view showing the structure of a composite sheet according to another embodiment of the invention.
  • a composite sheet 10 in FIG. 1 has a release sheet 1 and a thermosetting resin film 2 provided on the release sheet 1 .
  • the release sheet 1 has a substrate 3 and a release layer 4 , and the release layer 4 is provided so as to face the thermosetting resin film 2 .
  • the composite sheet 20 of FIG. 2 has a release sheet 11 and a thermosetting resin film 12 provided on the release sheet 11 .
  • the release sheet 11 has an intermediate layer 15 provided between the substrate 13 and the release layer 14 .
  • a laminate in which the substrate 13, the intermediate layer 15, and the release layer 14 are laminated in this order is suitable for use as a back grind sheet.
  • Each layer constituting the release sheet used in the composite sheet of the present invention will be described below.
  • the substrate is in the form of a sheet or film, and examples of constituent materials thereof include the following various resins.
  • the resin constituting the base material include polyethylene such as low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), and high-density polyethylene (HDPE); polypropylene, polybutene, polybutadiene, polymethylpentene, norbornene resin, and the like.
  • Polyolefins other than polyethylene Ethylene-based copolymers such as ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, ethylene-norbornene copolymer (Copolymer obtained using ethylene as a monomer); Vinyl chloride resins such as polyvinyl chloride and vinyl chloride copolymers (Resins obtained using vinyl chloride as a monomer); Polystyrene; Polycycloolefin; Polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalenedicarboxylate, and wholly aromatic polyesters in which all constituent units have aromatic cyclic groups; Poly(meth)acrylic acid esters; polyurethanes; polyurethane acrylates; polyimides; polyamides; polycarbonates
  • the polymer alloy of the above polyester and other resins preferably contains a relatively small amount of resin other than polyester.
  • resin constituting the base material for example, a crosslinked resin in which one or more of the resins exemplified above are crosslinked; one or two of the resins exemplified above Modified resins such as ionomers using the above are also included.
  • the resin constituting the base material may be used alone or in combination of two or more. When two or more types of resins are used to form the base material, the combination and ratio thereof can be arbitrarily selected.
  • the base material may have only one layer (single layer), or may have multiple layers of two or more layers. When the substrate has multiple layers, these multiple layers may be the same or different, and the combination of these multiple layers is not particularly limited.
  • the thickness of the substrate is preferably 5 ⁇ m to 1,000 ⁇ m, more preferably 10 ⁇ m to 500 ⁇ m, still more preferably 15 ⁇ m to 300 ⁇ m, and even more preferably 20 ⁇ m to 150 ⁇ m.
  • the "thickness of the base material” means the thickness of the entire base material. means.
  • the base material has a high thickness accuracy, that is, the thickness variation is suppressed regardless of the part.
  • materials with high thickness precision that can be used to form the base material include, for example, polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, polybutylene terephthalate, ethylene-acetic acid A vinyl copolymer etc. are mentioned.
  • the substrate contains various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc., in addition to the main constituent materials such as the above resins.
  • additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc.
  • the base material may be transparent or opaque, may be colored depending on the purpose, or may be deposited with other layers.
  • the base material can be manufactured by a known method.
  • a substrate containing a resin can be produced by molding a resin composition containing the above resin.
  • the release layer has a function of imparting releasability to the release sheet.
  • the release layer is formed of, for example, a cured release layer-forming composition containing a release agent.
  • the release agent is not particularly limited, and examples thereof include silicone resins, alkyd resins, acrylic resins, ethylene-vinyl acetate copolymers, and the like. Among these, an ethylene-vinyl acetate copolymer is preferable from the viewpoint of enhancing the protruding property of the top of the bump and from the viewpoint of peelability from the cured resin film.
  • the release layer may be a single layer (single layer) or a plurality of layers of two or more layers. When the release layer has multiple layers, these multiple layers may be the same or different, and the combination of these multiple layers is not particularly limited.
  • the thickness of the release layer is preferably 3 to 50 ⁇ m, more preferably 5 to 30 ⁇ m, from the viewpoint of releasability and handling.
  • the "thickness of the peeling layer” means the thickness of the entire peeling layer. means.
  • the intermediate layer is sheet-like or film-like, and its constituent material may be appropriately selected depending on the purpose, and is not particularly limited.
  • a preferred constituent material for the intermediate layer examples include resins containing structural units derived from monomer components such as olefin-based monomers such as urethane (meth)acrylates; be done.
  • the intermediate layer may be a single layer (single layer) or multiple layers of two or more layers.
  • these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited.
  • the thickness of the intermediate layer can be appropriately adjusted according to the height of the bumps on the surface of the semiconductor to be protected.
  • the thickness of the intermediate layer is preferably 50 ⁇ m to 600 ⁇ m because the influence of relatively high bumps can be easily absorbed. It is preferably 70 ⁇ m to 500 ⁇ m, even more preferably 80 ⁇ m to 400 ⁇ m.
  • the "thickness of the intermediate layer” means the thickness of the entire intermediate layer. means.
  • the composite sheet can be manufactured by sequentially laminating each layer described above so as to have a corresponding positional relationship. For example, when laminating a release layer or an intermediate layer on a substrate when manufacturing a composite sheet, the release layer-forming composition or intermediate layer-forming composition is applied onto the substrate, and if necessary A release layer or an intermediate layer can be laminated by drying or irradiating with an energy beam as required.
  • coating methods include spin coating, spray coating, bar coating, knife coating, roll coating, roll knife coating, blade coating, die coating, and gravure coating.
  • thermosetting resin composition when laminating a thermosetting resin film on the release layer already laminated on the base material, the thermosetting resin composition is applied onto the release layer, and the thermosetting resin is It is possible to form films directly.
  • the release layer when a release layer is further laminated on the intermediate layer already laminated on the substrate, the release layer can be directly formed by coating the release layer-forming composition on the intermediate layer. It is possible.
  • the composition when forming a continuous two-layer laminated structure using either composition, the composition is further applied on the layer formed from the composition to form a new layer. It is possible to form however, of these two layers, the layer to be laminated later is formed in advance using the above composition on another release film, and the side of this formed layer that is in contact with the release film is Preferably, the opposite exposed surface is laminated to the exposed surface of the remaining layer that has already been formed to form a continuous two-layer laminate structure. At this time, the composition is preferably applied to the release-treated surface of the release film. The release film may be removed as necessary after the laminated structure is formed.
  • the method for manufacturing a semiconductor chip of the present invention roughly includes a step of preparing a semiconductor chip manufacturing wafer (S1), a step of attaching a thermosetting resin film (S2), and a step of thermosetting the thermosetting resin film. (S3), and a step of singulating (S4), and further includes a step of grinding the back surface of the semiconductor chip fabrication wafer (S-BG).
  • the semiconductor chip manufacturing method of the present invention includes the following steps (S1) to (S4) in this order.
  • Step (S1) A step of preparing a semiconductor chip fabrication wafer having a bump forming surface provided with bumps and having grooves as dividing lines formed on the bump forming surface without reaching the back surface.
  • S2) The above-mentioned thermosetting resin film is pressed and adhered to the bump forming surface of the semiconductor chip producing wafer, and the bump forming surface of the semiconductor chip producing wafer is covered with the thermosetting resin film.
  • S4 The wafer for semiconductor chip fabrication with the cured resin film is singulated along the planned dividing line, and at least the bump formation surface and the side surface are coated with the cured resin film. Step of obtaining a chip Further, after the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or in the step (S4), the following steps (S-BG). Step (S-BG): a step of grinding the back surface of the semiconductor chip fabrication wafer
  • the manufacturing method including the above steps, it is possible to obtain a semiconductor chip in which not only the bump forming surface but also the side surface is covered with the cured resin film, and the cured resin film as a protective film is less likely to peel off while having excellent strength.
  • covered means that a cured resin film is formed along the shape of the semiconductor chip at least on the bump forming surface and the side surface of one semiconductor chip.
  • thermosetting resin film thermosetting resin film of the present embodiment
  • hardening resin film (X1) A cured resin film formed by thermally curing the "first cured resin film (X1)” is also referred to as a “first cured resin film (r1)”.
  • a curable resin film for forming a curable resin film as a protective film on the surface (back surface) of the semiconductor chip opposite to the bump forming surface is also referred to as a "second curable resin film (X2)."
  • a cured resin film formed by curing the "second cured resin film (X2)” is also referred to as a “second cured resin film (r2)".
  • the composite sheet for forming the first cured resin film (r1) as a protective film on both the bump forming surface and the side surface of the semiconductor chip is also called “first composite sheet ( ⁇ 1)".
  • the "first composite sheet ( ⁇ 1)” has a laminated structure in which the "first release sheet (Y1)” and the "first curable resin film (X1)” are laminated.
  • the composite sheet for forming the second cured resin film (r2) as a protective film on the back surface of the semiconductor chip is also called “second composite sheet ( ⁇ 2)".
  • the “second composite sheet ( ⁇ 2)” has a laminated structure in which the “second release sheet (Y2)” and the “second curable resin film (X2)" are laminated.
  • FIG. 3 shows a schematic cross-sectional view of an example of a semiconductor wafer prepared in step (S1).
  • a semiconductor chip manufacturing semiconductor wafer 21 having a bump forming surface 21a having bumps 22 is formed with grooves 23 as dividing lines on the bump forming surface 21a without reaching the back surface 21b.
  • a wafer 30 is prepared.
  • the shape of the bumps 22 is not particularly limited, and may be any shape as long as it can be brought into contact with and fixed to the electrodes or the like on the substrate for chip mounting.
  • the bumps 22 are spherical in FIG. 3, the bumps 22 may be spheroidal.
  • the spheroid may be, for example, a spheroid elongated vertically with respect to the bump formation surface 21a of the wafer 21, or a spheroid elongated horizontally with respect to the bump formation surface 21a of the wafer 21. It may be an elongated spheroid.
  • the bumps 22 may have a pillar shape.
  • the height of the bumps 22 is not particularly limited, and can be changed as appropriate according to design requirements.
  • An example of the height of the bumps 22 is 30 ⁇ m to 300 ⁇ m, preferably 60 ⁇ m to 250 ⁇ m, more preferably 80 ⁇ m to 200 ⁇ m.
  • the "height of the bump 22" means the height at the highest position from the bump forming surface 21a when focusing on one bump.
  • the number of bumps 22 is also not particularly limited, and can be changed as appropriate according to design requirements.
  • the wafer 21 is, for example, a semiconductor wafer on which circuits such as wiring, capacitors, diodes, and transistors are formed.
  • the material of the wafer is not particularly limited, and examples thereof include silicon wafers, silicon carbide wafers, compound semiconductor wafers, glass wafers, and sapphire wafers.
  • the size of the wafer 21 is not particularly limited, it is usually 8 inches (200 mm in diameter) or more, preferably 12 inches (300 mm in diameter) or more, from the viewpoint of improving batch processing efficiency.
  • the shape of the wafer 21 is not limited to a circular shape, and may be a square shape such as a square or a rectangular shape. In the case of a rectangular wafer, the size of the wafer 21 is preferably such that the length of the longest side is equal to or greater than the above size (diameter) from the viewpoint of improving batch processing efficiency.
  • the thickness of the wafer 21 is not particularly limited, but from the viewpoint of easily suppressing warping due to shrinkage when thermosetting the thermosetting resin film, the back surface 21 b of the wafer 21 is ground by suppressing the grinding amount in the subsequent process. From the viewpoint of shortening the time required for the process, the thickness is preferably 100 ⁇ m to 1,000 ⁇ m, more preferably 200 ⁇ m to 900 ⁇ m, and still more preferably 300 ⁇ m to 800 ⁇ m.
  • a plurality of grooves 23 are formed in a grid pattern on the bump formation surface 21a of the semiconductor chip fabrication wafer 30 prepared in step (S1) as dividing lines for separating the semiconductor chip fabrication wafer 30 into individual pieces.
  • the plurality of grooves 23 are cut grooves formed when applying the dicing before grinding method, and are formed to a depth shallower than the thickness of the wafer 21 , and the deepest part of the grooves 23 is the depth of the wafer 21 . It is so arranged that it does not reach the rear surface 21b.
  • the plurality of grooves 23 can be formed by dicing using a conventionally known wafer dicing apparatus equipped with a dicing blade.
  • the plurality of grooves 23 may be formed so that the semiconductor chip to be manufactured has a desired size and shape. Also, the size of the semiconductor chip is usually about 0.5 mm ⁇ 0.5 mm to 1.0 mm ⁇ 1.0 mm, but is not limited to this size.
  • the width of the groove 23 is preferably 10 ⁇ m to 2,000 ⁇ m, more preferably 30 ⁇ m to 1,000 ⁇ m, still more preferably 40 ⁇ m to 500 ⁇ m, and even more preferably, from the viewpoint of improving the embedding property of the thermosetting resin film. is between 50 ⁇ m and 300 ⁇ m.
  • the depth of the groove 23 is adjusted according to the thickness of the wafer to be used and the required chip thickness, preferably 30 ⁇ m to 700 ⁇ m, more preferably 60 ⁇ m to 600 ⁇ m, still more preferably 100 ⁇ m to 500 ⁇ m.
  • the semiconductor chip fabrication wafer 30 prepared in step (S1) is provided for step (S2).
  • Step (S2) An outline of the step (S2) is shown in FIG.
  • the first curable resin film (X1) is pressed and adhered to the bump forming surface 21a of the wafer 30 for semiconductor chip fabrication.
  • the first curable resin film (X1) has a laminated structure in which the first release sheet (Y1) and the first curable resin film (X1) are laminated. It may be used as a composite sheet ( ⁇ 1).
  • the first curable resin film (X1) of the first composite sheet ( ⁇ 1) is pressed and attached to the bump forming surface 21a of the semiconductor chip fabrication wafer 30 as the attachment surface. do.
  • the bump formation surface 21a of the semiconductor chip fabrication wafer 30 is covered with the first curable resin film (X1), and the bump formation surface 21a is formed on the semiconductor chip fabrication wafer 30.
  • a first curable resin film (X1) is embedded in the groove 23 .
  • the pressing force when attaching the first curable resin film (X1) to the semiconductor chip fabrication wafer 30 is, from the viewpoint of improving the embedding property of the first curable resin film (X1) in the groove 23, It is preferably 1 kPa to 200 kPa, more preferably 5 kPa to 150 kPa, still more preferably 10 kPa to 100 kPa.
  • the pressing force when attaching the first curable resin film (X1) to the semiconductor chip fabrication wafer 30 may be appropriately varied from the initial stage to the final stage of attachment. For example, from the viewpoint of better embedding of the first curable resin film (X1) into the grooves 23, it is preferable to reduce the pressing force at the initial stage of attachment and gradually increase the pressing force.
  • a specific heating temperature is preferably 50°C to 150°C, more preferably 60°C to 130°C, still more preferably 70°C to 110°C.
  • the heat treatment performed on the first curable resin film (X1) is not included in the curing treatment of the first curable resin film (X1).
  • a specific pressure of the reduced pressure environment is preferably 0.001 kPa to 50 kPa, more preferably 0.01 kPa to 5 kPa, still more preferably 0.05 kPa to 1 kPa.
  • Step (S3) An outline of the step (S3) is shown in FIG.
  • the first curable resin film (X1) is thermally cured to obtain the semiconductor chip fabrication wafer 30 with the first curable resin film (r1).
  • the first cured resin film (r1) formed by thermosetting the first cured resin film (X1) becomes stronger than the first cured resin film (X1) at room temperature. Therefore, by forming the first cured resin film (r1), the bump necks are well protected.
  • the curing temperature is preferably 90° C. to 200° C.
  • the curing time is preferably 1 hour to 3 hours.
  • Step (S4) An outline of the step (S4) is shown in FIG.
  • step (S4) the portion of the first cured resin film (r1) formed in the groove 23 of the semiconductor chip fabrication wafer 30 with the first cured resin film (r1) is cut along the dividing line. .
  • this step as described above, it is necessary to recognize the kerf, which is the groove portion 23, which is the dividing line, from the bump forming surface 21a side. Since the cured resin film (r1) has high transparency, the kerf can be easily recognized.
  • a semiconductor chip 40 having at least the bump formation surface 21a and side surfaces covered with the first cured resin film (r1) can be obtained.
  • the semiconductor chip 40 has excellent strength because the bump forming surface 21a and the side surfaces are covered with the first cured resin film (r1).
  • the bonding surface (interface) between the bump forming surface 21a and the first cured resin film (r1) is , are not exposed at the side surfaces of the semiconductor chip 40 .
  • the exposed portion exposed on the side surface of the semiconductor chip 40 tends to become the starting point of film peeling. Since the semiconductor chip 40 of the present invention does not have the exposed portion, film peeling from the exposed portion is less likely to occur in the process of cutting the semiconductor chip fabrication wafer 30 to manufacture the semiconductor chip 40 or after manufacturing. Therefore, a semiconductor chip 40 is obtained in which peeling of the first cured resin film (r1) as a protective film is suppressed.
  • Step (S-BG) An outline of the step (S-BG) is shown in FIG.
  • the back surface 21b of the semiconductor chip fabrication wafer 30 is ground while the first composite sheet ( ⁇ 1) is attached.
  • "BG" in FIG. 7 means background grinding.
  • the first release sheet (Y1) is peeled off from the first composite sheet ( ⁇ 1).
  • the amount of grinding when grinding the back surface 21b of the wafer for semiconductor chip fabrication 30 should be sufficient to expose at least the bottom of the groove 23 of the wafer for semiconductor chip fabrication 30.
  • the first curable resin film (X1) or the first curable resin film (r1) embedded in the groove 23 may also be ground.
  • the step (S-BG) may be performed after the step (S2) and before the step (S3), or performed after the step (S3) and before the step (S4). Alternatively, it may be performed in the above step (S4). Above all, from the viewpoint of making it easier to exhibit the effects of the present invention, it is preferable to carry out after the step (S3) and before the step (S4), or in the step (S4).
  • Step (T) One aspect of the method for manufacturing a semiconductor chip of the present invention preferably further includes the following step (T).
  • the manufacturing method according to the above embodiment it is possible to obtain the semiconductor chip 40 in which at least the bump formation surface 21a and the side surfaces are covered with the first cured resin film (r1). However, the back surface of the semiconductor chip 40 is exposed. Therefore, from the viewpoint of protecting the back surface of the semiconductor chip 40 and further improving the strength of the semiconductor chip 40, it is preferable to perform the step (T).
  • the step (T) preferably includes the following step (T1) and the following step (T2) in this order.
  • ⁇ Step (T1) Step of attaching the second curable resin film (X2) to the back surface of the wafer for semiconductor chip production
  • ⁇ Step (T2) Second curing by curing the second curable resin film (X2) Step of Forming Resin Film (r2)
  • step (T1) is performed after the step (S-BG).
  • step (T2) is performed before step (S4).
  • step (S4) the semiconductor wafer with the cured resin film, the back surface of which is protected by the second cured resin film (r2), is singulated, and the bump formation surface and side surfaces are protected by the cured resin film (r1).
  • a semiconductor chip whose back surface is protected by the second cured resin film (r2) is obtained.
  • a second composite sheet ( ⁇ 2) having a laminated structure in which a second release sheet (Y2) and a second curable resin film (X2) are laminated may be used.
  • the timing of peeling the second release sheet (Y2) from the second composite sheet ( ⁇ 2) may be between step (T1) and step (T2), or after step (T2). good too.
  • the release sheet (Y2) of the second composite sheet ( ⁇ 2) supports the second curable resin film (X2) and is used for dicing. It is preferable that it also has a function as a sheet.
  • the second composite sheet ( ⁇ 2) is attached to the back surface 21b of the semiconductor chip fabrication wafer 30 with the first cured resin film (r1), so that when singulating by dicing , the second release sheet (Y2) functions as a dicing sheet, facilitating dicing.
  • the step (S3) is performed after the step (S-BG)
  • the step (T1) is performed before the step (S3), and then the steps (S3) and (T2) are performed. may be performed simultaneously. That is, the first curable resin film (X1) and the second curable resin film (X2) may be collectively cured at the same time. As a result, the number of hardening treatments can be reduced.
  • Step (U) One aspect of the method for manufacturing a semiconductor chip of the present invention may further include the following step (U).
  • the exposure process for exposing the top of the bump includes, for example, an etching process such as a wet etching process or a dry etching process.
  • dry etching processing includes, for example, plasma etching processing. If the tops of the bumps are not exposed on the surface of the protective film, the exposure process may be performed for the purpose of retracting the protective film until the tops of the bumps are exposed.
  • the timing of performing the step (U) is not particularly limited as long as the first cured resin film (r1) is exposed, and is after the step (S3) and before the step (S4), It is preferable that the release sheet (Y1) and the back grind sheet are not attached.
  • the semiconductor chip of the present invention has a bump-formed surface having bumps, and has a cured resin film formed by curing the thermosetting resin film of the present embodiment on both the bump-formed surface and the side surface.
  • the semiconductor chip of the present invention is obtained by cutting the cured resin film embedded in the groove formed in the wafer for semiconductor chip fabrication along the planned division lines to individualize the film.
  • thermosetting resin film-forming composition The raw materials used for producing the thermosetting resin film-forming composition are shown below.
  • Polymer component (A) (A)-1: Polyvinyl butyral having structural units represented by the following formulas (i)-1, (i)-2 and (i)-3 (manufactured by Sekisui Chemical Co., Ltd. “S-Lec BL-10” , weight average molecular weight 25,000, glass transition temperature 59 ° C.)
  • A)-2 Polyarylate ("Unifyr (registered trademark) M-2040" manufactured by Unitika Ltd.)
  • n 1 is an integer from 68 to 74.
  • Epoxy resin (B1) [Liquid epoxy resin] (B1)-1: Liquid modified bisphenol A type epoxy resin (manufactured by DIC Corporation "Epiclon (registered trademark) EXA-4850-150", number average molecular weight 900, epoxy equivalent weight 450 g/eq)
  • Thermosetting agent (B2) (B2)-1 O-cresol type novolac resin (DIC Corporation "Phenolite (registered trademark) KA-1160", hydroxyl equivalent 117 g/eq)
  • Curing accelerator (C) - (C)-1 2-phenyl-4,5-dihydroxymethylimidazole (“Curesol (registered trademark) 2PHZ-PW” manufactured by Shikoku Chemical Industry Co., Ltd.)
  • thermosetting resin film-forming composition (1) Each component shown in Table 1 is blended according to the composition shown in Table 1, dissolved or dispersed in methyl ethyl ketone, and stirred at 23°C to obtain A thermosetting resin film-forming composition (1) having a total concentration of all components other than the solvent of 60% by mass was obtained. All of the compounding amounts of the components other than the solvent shown here are the compounding amounts of the target product containing no solvent. The description of "-" in the column of the component in Table 1 means that the thermosetting resin film-forming composition (1) does not contain that component.
  • thermosetting resin film Using a release film (“SP-PET381031” manufactured by Lintec Corporation, thickness 38 ⁇ m) in which one side of a polyethylene terephthalate film is release-treated by silicone treatment, the above release-treated surface is used. was coated with the thermosetting resin film-forming composition (1) obtained above and dried by heating at 120° C. for 2 minutes to form a thermosetting resin film having a thickness of 45 ⁇ m.
  • SP-PET381031 manufactured by Lintec Corporation, thickness 38 ⁇ m
  • thermosetting resin film obtained above, the following measurements and evaluations were performed. Table 1 shows the results.
  • thermosetting resin film with a release film obtained in each example was attached to a glass plate (Matsunami Glass Industry Co., Ltd. “Shiraenma No 1”, size: long 76 mm (height) ⁇ 26 mm (width) ⁇ 1 mm (thickness)) was cut into half lengthwise and attached.
  • the application was performed using a desktop laminator (“LPD3212” manufactured by Fujipla Co., Ltd.) under the following conditions. (Affixing conditions) ⁇ Attachment temperature: 25°C ⁇ Applying speed: 3 mm/sec ⁇ Applying pressure: 0.3 MPa
  • the release film is peeled off from the thermosetting resin film, and the thermosetting resin film is cured by heating for 240 minutes under conditions of 130° C. and 0.5 MPa to obtain a glass plate with the cured resin film. made.
  • the transmittance at wavelengths of 600 nm and 900 nm was measured under the following conditions.
  • ⁇ Measuring device UV-3600 series manufactured by Shimadzu Corporation ⁇ Measurement wavelength range: 185 nm to 2,000 nm
  • Detector unit Direct light reception ⁇ Measurement temperature: 25°C
  • thermosetting resin film with a release film obtained in each example was pressed against the groove-formed side of the groove-formed wafer using the thermosetting resin film as a bonding surface under the following conditions.
  • the non-grooved portion was covered with a thermosetting resin film, and the groove portion was filled with the thermosetting resin film.
  • thermosetting resin film (Affixing conditions) ⁇ Applying device: BG tape laminator ("RAD-3510F/8" manufactured by Lintec Corporation) ⁇ Applying pressure: 0.5 MPa ⁇ Applying time: 43 seconds ⁇ Applying speed: 7 mm/sec ⁇ Applying temperature: 90°C ⁇ Roller attachment height: -200mm Thereafter, the release film was peeled off from the thermosetting resin film to obtain a grooved wafer with the thermosetting resin film.
  • the grooved wafer with the thermosetting resin film was heated at a temperature of 160° C. for 1 hour to cure the thermosetting resin film to obtain the grooved wafer with the cured resin film.
  • a back grind tape ("E-8510HR” manufactured by Lintec Co., Ltd.) is attached to the cured resin film formed above, and the back grind tape is fixed to the surface of the grooved wafer opposite to the grooved surface. was ground. The grinding was continued until the thickness of the non-grooved portion of the grooved wafer reached 150 ⁇ m.
  • ultraviolet irradiation apparatus (“RAD-2000” manufactured by Lintec Corporation) ultraviolet irradiation was performed from the back grind tape side under the conditions of an illuminance of 230 mW/cm 2 and a light amount of 570 mJ/cm 2 .
  • a dicing tape (“D-686H” manufactured by Lintec Corporation) was attached to the ground surface, and the back grinding tape was peeled off to expose the cured resin film.
  • the obtained grooved wafer with the cured resin film after grinding was fixed to a dicing table of a blade dicer (“DFD6362” manufactured by Disco Co., Ltd.), and the surface on which the cured resin film was formed was photographed with an attached camera.
  • FIG. 8 shows an image of a grooved wafer with a cured resin film formed using the thermosetting resin film of Example 1, taken from the cured resin film side.
  • FIG. 9 shows an image of a grooved wafer with a cured resin film formed using the thermosetting resin film of Comparative Example 1, taken from the cured resin film side.
  • the kerf can be clearly recognized in the image shown in FIG. 8, but the kerf cannot be clearly recognized in the image shown in FIG.
  • thermosetting resin film with a release film obtained in each example was used as an 8-inch circular electrolytic copper foil (thickness: 35 ⁇ m, Kansai Electronics Industry Co., Ltd.) with the thermosetting resin film as the bonding surface. (manufactured) was applied while pressing under the following conditions.
  • thermosetting resin film with a release film protruding from the copper foil was cut off to obtain a copper foil with an 8-inch thermosetting resin film attached.
  • the copper foil to which the thermosetting resin film was attached showed no warpage at room temperature (25°C).
  • the release film is peeled off from the thermosetting resin film, heated at 130 ° C.
  • test piece having a cured resin film formed on one side of the copper foil.
  • the above test piece is placed on the table so that the cured resin film faces upward, and the end of the test piece is taped at three locations where the outer circumference of the test piece is roughly evenly divided into three (Nichiban Co., Ltd., It was fixed to the table using a product name “Cellotape (registered trademark) LP-24”, tape width 24 mm). The maximum height of the test piece floating above the table was measured at the portion not fixed with tape, and this was taken as the value of warpage.
  • the cured resin film formed from the thermosetting resin film containing the epoxy resin (i) containing a naphthalene ring and having an epoxy equivalent of 200 g/eq or more has excellent kerf recognizability and is resistant to warping. It can be seen that the occurrence of On the other hand, the cured resin films formed from the thermosetting resin films of Comparative Examples 1 to 4 containing no epoxy resin (i) were inferior in at least one of kerf recognition and warpage.

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