WO2023130984A1 - 晶圆处理设备、晶圆处理系统及控制方法 - Google Patents

晶圆处理设备、晶圆处理系统及控制方法 Download PDF

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Publication number
WO2023130984A1
WO2023130984A1 PCT/CN2022/141351 CN2022141351W WO2023130984A1 WO 2023130984 A1 WO2023130984 A1 WO 2023130984A1 CN 2022141351 W CN2022141351 W CN 2022141351W WO 2023130984 A1 WO2023130984 A1 WO 2023130984A1
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WIPO (PCT)
Prior art keywords
chamber
wafer
processing
drive
heating
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PCT/CN2022/141351
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English (en)
French (fr)
Inventor
周仁
杨德赞
王卓
谢添
朱小莉
Original Assignee
江苏微导纳米科技股份有限公司
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Publication of WO2023130984A1 publication Critical patent/WO2023130984A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of semiconductor processing, in particular to a wafer processing device, a wafer processing system and a control method.
  • Wafer processing is used to process semiconductors through techniques including: Physical Vapor Deposition (PVD), Chemical Vapor Deposition (CVD), Plasma enhanced chemical vapor deposition (Plasma enhanced chemical vapor deposition) deposition, PECVD), atomic layer deposition (Atomic layer deposition, ALD), plasma enhanced atomic layer deposition (Plasma enhanced atomic layer deposition, PEALD), pulse deposition layer (Pulse deposition layer, PDL), molecular layer deposition (Molecular layer deposition , MLD), plasma enhanced pulsed deposition layer (Plasma enhanced pulsed deposition layer, PEPDL) treatment, etching and resist removal, etc.
  • PVD Physical Vapor Deposition
  • CVD Chemical Vapor Deposition
  • PECVD Plasma enhanced chemical vapor deposition
  • atomic layer deposition Atomic layer deposition, ALD
  • plasma enhanced atomic layer deposition Plasma enhanced atomic layer deposition
  • PEALD plasma enhanced atomic layer deposition
  • PDL Puls
  • the wafer needs to be preheated first.
  • a heating plate is usually installed on the processing equipment, and the wafer is preheated by the heating plate before the processing process. , after the predetermined processing conditions are reached, the wafer processing will be carried out.
  • Such a processing method leads to the problems of long occupation time and low efficiency when processing the wafer.
  • the object of the present invention is to provide a wafer processing equipment, a wafer processing system and a control method, the wafer processing equipment can directly transport the wafers to be processed to the processing chamber through the driving device for processing,
  • the wafers that need to be adjusted or the wafers that do not need to be directly processed can be adjusted or retained in the conversion chamber, which can reduce the time occupied by the working mechanism and the waiting time of the wafers between different batches, and speed up the processing efficiency of the wafers.
  • the basic conditions for synchronously processing multiple wafers or multiple batches of wafers can also be provided through the conversion chamber and the carrying assembly, which solves the problems of long time occupation and low efficiency in wafer processing in the prior art.
  • the present invention provides a wafer processing equipment, which includes a drive device, a conversion chamber, a processing chamber, a first pumping device, a second pumping device and a carrier assembly; the processing chamber It communicates with the transition chamber; wherein, the transition chamber is used to provide a sealed space, and the first pumping device communicates with the transition chamber, and the first pumping device is used to extract the gas in the transition chamber pumping out to perform a first vacuum process on the switching chamber; wherein, the processing chamber is used to process wafers, the second pumping device communicates with the processing chamber, and the second pumping device is used to The gas in the processing chamber is pumped out to perform a second vacuum treatment on the processing chamber; the carrying assembly is arranged in the conversion chamber, the carrying assembly is used to carry a wafer, and the driving device is used to adjust The bearing assembly is at the position of the conversion chamber, and the driving device is used to drive the bearing assembly to move between the conversion chamber and the processing chamber.
  • the beneficial effect of the wafer processing equipment of the present invention is that the wafer placed in the processing chamber is processed by setting the processing chamber.
  • the treatment here includes: heating, deposition, coating, etching or other treatment methods.
  • the wafer is supported by setting a carrier assembly.
  • the conversion chamber By setting the conversion chamber and providing a sealed space with the first vacuum treatment in the conversion chamber, the wafer can be adjusted or retained in the conversion chamber, and the processing chamber is provided with the second vacuum treatment.
  • the space is sealed, so that the adjustment or retention of multiple batches of wafers in the conversion chamber under the first vacuum condition can be flexibly controlled through the drive device, the conversion chamber and the processing chamber, so as to avoid the wafer entry in the prior art
  • the conversion of the processing chamber in a non-vacuum environment before damages the quality of the wafer.
  • the present invention can flexibly control different batches of wafers to be transported to the processing chamber for processing by setting the conversion chamber under the first vacuum condition for wafer retention. Make the wafer move freely between the conversion chamber under the first vacuum condition and the processing chamber under the second vacuum condition to ensure that the wafer is not damaged, so as to provide the possibility of processing multiple pieces or batches of wafers at the same time basic condition.
  • the driving device is set to drive the carrying assembly to move between the conversion chamber and the processing chamber, or to adjust the position of the carrying assembly in the conversion chamber. It can be seen that the wafer processing equipment of the present application can flexibly control the adjustment or storage of wafers in the conversion chamber through the driving device, the conversion chamber and the processing chamber, or flexibly control the transportation of wafers to the processing chamber.
  • the processing chamber includes at least a first heating chamber and a first process chamber, the first heating chamber is used for heating the wafer, and the first process chamber is used for processing the wafer Process processing.
  • the beneficial effect is that by setting the processing chamber at least as the first heating chamber and the first process chamber, different batches of wafers can be heated and processed synchronously, and the heat treatment can be pre-heating or post-heating processing, so as to solve the problems of long time occupation and low efficiency when preheating or heating the wafer in the prior art.
  • the present invention can flexibly control the delivery of different batches of wafers to the processing chamber by setting the conversion chamber under the first vacuum condition for wafer retention. Processing in a heating chamber or a process chamber can reduce the waiting time for preheating treatment of different batches of wafers and speed up the processing efficiency of different batches of wafers.
  • the processing chamber at least includes a first heating chamber, a second heating chamber, and a first process chamber and a second process chamber, wherein the first heating chamber and the second heating chamber are used for Heat treatment is performed on the first batch of wafers and the second batch of wafers, and the first process chamber and the second process chamber are used to process the first batch of wafers and the second batch of wafers respectively.
  • Its beneficial effect is that: by setting at least two of the process chamber and the heating chamber respectively, the same batch of wafers can be sequentially heat-treated and processed, and the first batch and the second batch of wafers can also be processed at the same time.
  • the heat treatment and process processing are carried out synchronously to solve the problems of long time and low efficiency in preheating or heat treatment of the wafers in the prior art, and greatly improve the process efficiency of batch wafers.
  • the first vacuum condition is provided by the conversion chamber
  • the first batch of wafers and the second batch of wafers respectively enter the first heating chamber, the first process chamber, and the second heating chamber and the second process chamber before they can be
  • the conversion chamber under the first vacuum condition is retained or transferred to avoid the damage of the quality of the wafer due to conversion in a non-vacuum environment before the wafer enters the processing chamber in the prior art.
  • the present invention sets the conversion chamber under the first vacuum condition
  • Carrying out wafer storage can flexibly control different batches of wafers to be transported to the first heating chamber, the second heating chamber, the first process chamber and the second process chamber for processing, which can reduce the waiting time for different batches of wafer preheating Time, speed up the processing efficiency of different batches of wafers.
  • the processing chamber is disposed on an upper side or a lower side of the conversion chamber, and the driving device is disposed on a side of the conversion chamber away from the processing chamber. Its beneficial effects are: by arranging the processing chamber on the upper side or the lower side of the conversion chamber, it is convenient to install the carrier assembly and support the wafer, and by arranging the driving device on the The side of the conversion chamber away from the processing chamber is convenient for the driving device to drive the carrying assembly and facilitate the transportation of the wafer.
  • the drive device includes a first drive mechanism, a second drive mechanism and a converter; the converter is arranged in the conversion cavity, the first drive mechanism is connected to the converter, The first driving mechanism is used to drive the converter to move or rotate; the carrying assembly is arranged on the converter, and the second driving mechanism is arranged on one side of the converter, and the second driving mechanism is used for to drive the bearing assembly to move between the processing chamber and the conversion chamber.
  • the beneficial effect is that: the converter is driven to move in the conversion chamber by the first driving mechanism.
  • the bearing component is located on the converter, the position of the bearing component can be adjusted.
  • the carrying assembly can be driven by the second driving mechanism to move to the processing chamber to process the wafer.
  • the converter is detachably connected to the first driving mechanism.
  • the beneficial effect is that such arrangement facilitates maintenance or replacement of the converter.
  • the drive device further includes a connection mechanism; the connection mechanism is arranged on the bearing assembly or the converter, the connection mechanism is provided with a first clamping part, and the bearing assembly or the The converter is provided with a second clamping part adapted to the first clamping part, and the connection mechanism is used to connect the converter and the connecting piece. Its beneficial effect is: by providing the connection mechanism, the carrier assembly and the converter can be connected together through the first clamping part and the second clamping part, and the second drive When the mechanism drives the bearing component to move, it can move together with the converter and all the bearing components on the converter.
  • the drive device further includes a third drive mechanism; the third drive mechanism is arranged on one side of the converter, and the third drive mechanism is used to drive the converter and the The host component moves.
  • the beneficial effect is that: by setting the third drive mechanism to drive the converter, the converter can be driven to move while driving the bearing assembly. When there are several bearing assemblies, it can Each of the carrying components is driven to move synchronously.
  • the wafer can be supported by the two carrying components, which facilitates asynchronous processing.
  • each of the second driving mechanisms is used to drive each of the carrying assemblies.
  • the beneficial effect is that: by providing at least two second driving mechanisms, and the two second driving mechanisms are respectively set corresponding to different carrying assemblies, it is possible to drive different carrying assemblies to perform synchronous or Asynchronous movement improves flexibility of use.
  • the carrying assembly is provided with N support parts, each of the support parts is used to support the wafer, and N is an integer greater than 1.
  • the beneficial effect is that: by setting N support parts on the carrier assembly, multiple wafers can be set on one carrier assembly at the same time, and multiple wafers can be processed at the same time, improving the processing efficiency.
  • each of the processing chambers works independently, and the driving device is used to drive the carrier assembly between each of the processing chambers and the conversion chamber move.
  • the beneficial effect is that by setting several independently working processing chambers, different wafers can be processed synchronously, and the same wafer can also be processed asynchronously.
  • the number of the processing chambers is two, and the two processing chambers are the two processing chambers, or the two processing chambers are the two heating chambers, or the two processing chambers are the two heating chambers.
  • the two processing chambers are one process chamber and one heating chamber.
  • the wafer processing equipment further includes a supply device; the supply device communicates with the process chamber, and the supply device is used to provide the process chamber with raw materials for processing the wafer.
  • the beneficial effect is that: by setting the supply device, raw materials can be supplied to the process chamber when processing is required, so as to ensure the normal operation of the equipment.
  • the wafer processing equipment further includes a seal provided on the carrying assembly, and the seal is used to isolate the conversion chamber from the processing chamber.
  • the beneficial effect is that the processing chamber can be isolated from the conversion chamber by setting the sealing member, so as to prevent the raw material or temperature from diffusing into the conversion chamber during processing in the processing chamber, and ensure normal processing.
  • the wafer processing equipment further includes a fourth driving mechanism; the fourth driving mechanism is arranged on one side of the carrying assembly, and the fourth driving mechanism is used to drive the carrying assembly to rotate.
  • the beneficial effect is that by setting the fourth driving mechanism to drive the carrying assembly to rotate, the angle of the wafer on the carrying assembly can be adjusted, and the quality of the processed wafer can be guaranteed.
  • the wafer processing equipment further includes a base body; the base body is provided with the processing chamber and the conversion chamber, the driving device is arranged on the base body, and the driving device and the
  • the sealing method between the substrates is dynamic sealing.
  • the wafer processing equipment further includes a fifth driving mechanism;
  • the base body includes a first fixing part and a second fixing part;
  • the process chamber and the heating chamber are arranged on the first fixing part part, the first fixing part and the second fixing part form the conversion cavity;
  • the fifth driving mechanism is arranged on the first fixing part and/or the second fixing part, and the fifth The driving mechanism is used to drive the first fixing part or the second fixing part to move.
  • the beneficial effect is that the space of the conversion cavity can be opened and closed by setting the base body as the first fixing part and the second fixing part.
  • the first fixing part or the second fixing part can be driven to move by the fifth driving mechanism, so as to facilitate the opening and closing of the conversion cavity, and facilitate cleaning or maintenance.
  • the wafer processing equipment further includes a heating device; the heating device communicates with the conversion chamber, and the heating device is used for heating the conversion chamber.
  • the beneficial effect is that: by setting the heating device, the conversion chamber can be heated, the wafer or the device located in the conversion chamber can be heated, and the temperature of the wafer can be guaranteed or the wafer can be preheated.
  • the present invention also provides a wafer processing system, which includes a transfer device and the wafer processing device described in any feasible solution; the wafer processing device is provided with a transfer channel, and the transfer device In communication with the transmission channel, the transmission device is used to transport the wafer.
  • the beneficial effect is that: setting the transfer device facilitates transporting the wafer to the wafer processing device, and at the same time facilitates taking out the wafer from the wafer processing device.
  • each of the wafer processing devices is respectively arranged on different sides of the transfer device, and the transfer device is used to transfer the wafer to each The wafer processing equipment, and the transport equipment is used to transport the wafers of each of the wafer processing equipment.
  • Its beneficial effect is: set in this way, set at least two described wafer processing equipments at one described transfer equipment, make one described transfer equipment and at least two described wafer processing equipments support use, can improve described transfer The utilization rate of the equipment is high, the floor space is saved, and the system cost is reduced.
  • the wafer processing system also includes front-end processing equipment;
  • the wafers are transported to the wafer cassette and/or the wafer processing equipment, and the front-end processing equipment is used to transport the wafer cassette.
  • Its beneficial effects are: by setting the front-end processing equipment and the wafer circulation box, the wafers output by the transfer equipment can be transported into the wafer circulation box in the front-end processing equipment, reducing the Possibility of wafer contamination.
  • the wafer processing system further includes a FOUP and a transfer device; the FOUP is arranged on the front-end processing equipment, and the front-end processing equipment is used to transfer the wafers
  • the cassettes are transported to the FOUP; the transport device is used to transport the FOUP.
  • the beneficial effect is that: by setting the FOUP and the transfer device, the FOUP can be transported to the FOUP through the front-end processing module, and the transfer device can be used to transfer
  • the wafer transfer box is transferred to facilitate the input and output of wafers.
  • the present invention also provides a method for controlling wafer processing equipment, including:
  • the drive device includes a first drive mechanism, a second drive mechanism and a converter
  • the S2 specifically includes:
  • the processing chamber is arranged on the upper side or the lower side of the conversion chamber, and the driving device is arranged on the side of the conversion chamber away from the processing chamber;
  • the S22 specifically includes: using the second driving mechanism to drive the carrying assembly to move up and down to the processing chamber.
  • S22 further includes: respectively driving the carrying assembly to move up and down to the processing chamber through at least two of the second driving mechanisms.
  • each of the processing chambers works independently, and the several processing chambers at least include a first heating chamber and a first process chamber;
  • the S2 and the S3 specifically include:
  • the S31 specifically includes:
  • the S32 specifically includes:
  • the number of the carrying assembly, the heating chamber and the processing chamber is set to two;
  • the S31 specifically includes: using the driving device to drive the two carrying assemblies to move to the two heating chambers respectively, and at least heating in the first heating chamber and the second heating chamber respectively within the first predetermined time;
  • the S32 specifically includes: using the driving device to drive the two carrier assemblies to move to the two process chambers respectively, and at least Processes are respectively performed in the first process chamber and the second process chamber within a second predetermined time.
  • the S1 specifically includes: storing the wafer to be processed by the front-end processing equipment, and moving the wafer to be processed to the carrier assembly of the transfer chamber by the transfer device.
  • FIG. 1 is a schematic diagram of a three-dimensional structure of a wafer processing device in a first embodiment of the present invention
  • Fig. 2 is a partial structural schematic diagram of Fig. 1;
  • Fig. 3 is a structural schematic diagram of the bearing assembly in Fig. 1;
  • Fig. 4 is a schematic structural view of the heating chamber in Fig. 1;
  • Fig. 5 is a schematic structural view of the first drive mechanism in the second embodiment of the present invention.
  • FIG. 6 is a schematic structural view of a third drive mechanism in a second embodiment of the present invention.
  • Fig. 7 is a schematic structural diagram of a bearing assembly in a third embodiment of the present invention.
  • Fig. 8 is a schematic structural view of a fourth driving mechanism in a fourth embodiment of the present invention.
  • Fig. 9 is a schematic structural diagram of a conversion cavity in a fifth embodiment of the present invention.
  • FIG. 10 is a schematic diagram of the three-dimensional structure of the wafer processing system in the above-mentioned embodiment of the present invention.
  • FIG. 11 is a schematic flowchart of a method for controlling wafer processing equipment in the above-mentioned embodiment of the present invention.
  • Process chamber 1011. First cover;
  • Heating cavity 1021. Second cover;
  • Bearing component 201. Support part; 202. First bearing component;
  • Driving device 401, first driving mechanism; 402, second driving mechanism; 403, converter; 404, third driving mechanism;
  • the embodiment of the present invention provides a wafer processing equipment.
  • Fig. 1 is a schematic diagram of the three-dimensional structure of the wafer processing equipment in the first embodiment of the present invention
  • Fig. 2 is a schematic diagram of the partial structure of Fig. 1
  • Fig. 3 is a schematic diagram of the structure of the carrying assembly in Fig. 1
  • Fig. 4 is a schematic diagram of the heating chamber in Fig. 1
  • Fig. 7 is a schematic structural view of the bearing assembly in the third embodiment of the present invention
  • Fig. 9 is a schematic structural view of the transition chamber in the fifth embodiment of the present invention.
  • the wafer processing equipment 11 includes a driving device 4, a conversion chamber 103, a processing chamber 100, a first air extraction device 9, a second air extraction device (not shown in the figure) and a carrier assembly 2;
  • the processing chamber 100 communicates with the transition chamber 103; wherein, the transition chamber 103 is used to provide a sealed space, the first pumping device 9 communicates with the transition chamber 103, and the first pumping device 9 It is used to extract the gas in the conversion chamber 103 to perform a first vacuum treatment on the conversion chamber 103, so that the conversion chamber 103 has a first vacuum condition;
  • the processing chamber 100 is used for processing wafers, and the The second gas pumping device (not shown in the figure) communicates with the processing chamber 100, and the second gas pumping device (not shown in the figure) is used to pump out the gas in the processing chamber 100, so that the The processing chamber 100 performs a second vacuum process, so that the processing chamber 100 has a second vacuum condition;
  • the carrying assembly 2 is arranged in
  • the transfer chamber 103 works under a sheet transfer pressure, generally at 0.1-0.3 Torr (pressure unit), and the transfer chamber 103 has a first vacuum condition to match the sheet transfer pressure of the transfer chamber 103 ;
  • the processing chamber 100 works under a process pressure, such as 1 torr (pressure unit), and the processing chamber 100 has a second vacuum condition to match the process pressure of the processing chamber 100, that is, the conversion
  • a first vacuum condition of the chamber is different from a second vacuum condition of the processing chamber.
  • the first vacuum condition of the conversion chamber is the same as the second vacuum condition of the processing chamber.
  • the wafer processing equipment 11 includes a driving device 4, a conversion chamber 103, a processing chamber 100 and a carrier assembly 2; the processing chamber 100 communicates with the conversion chamber 103; wherein, the conversion chamber 103 is used to provide a sealed space, so that the conversion chamber 103 has a first vacuum condition; wherein, the processing chamber 100 is used to process wafers, and the processing chamber 100 has a second vacuum condition; the carrier assembly 2 is set In the conversion chamber 103, the carrier assembly 2 is used to carry wafers, the driving device 4 has a first drive assembly for adjusting the position of the carrier assembly 2 in the conversion chamber 103, and has a second The driving assembly is used to drive the carrying assembly 2 to move between the conversion chamber 103 and the processing chamber 100 .
  • the transfer chamber 103 works under a sheet transfer pressure, generally at 0.1-0.3 Torr (pressure unit), and the transfer chamber 103 has a first vacuum condition to match the sheet transfer pressure of the transfer chamber 103 ;
  • the processing chamber 100 works under a process pressure, such as 1 torr (pressure unit), and the processing chamber 100 has a second vacuum condition to match the process pressure of the processing chamber 100, that is, the conversion
  • a first vacuum condition of the chamber is different than a second vacuum condition of the processing chamber.
  • the first vacuum condition of the conversion chamber is the same as the second vacuum condition of the processing chamber.
  • the wafer processing equipment includes a driving device 4, a conversion chamber 103, a processing chamber 100 and a carrier assembly 2; the processing chamber 100 communicates with the conversion chamber 103; wherein, the conversion chamber 103 is used to provide a sealed space, so that the conversion chamber 103 has a first vacuum condition; wherein, the processing chamber 100 is used to process wafers, and the processing chamber includes at least a heating chamber 102 and a process chamber 101, the process The chamber 101 has a second vacuum condition, the heating chamber 102 has a third vacuum condition; the carrying assembly 2 is arranged in the conversion chamber 103, the carrying assembly 2 is used to carry a wafer, and the driving device has The first drive assembly is used to adjust the position of the carrier assembly 2 in the conversion chamber 103, and the second drive assembly is used to drive the carrier assembly 2 to move between the conversion chamber 103 and the processing chamber 100 .
  • the conversion chamber 103 can obtain the first vacuum condition through the first pumping device 9
  • the process chamber 101 can obtain the second vacuum condition through the second pumping device
  • the heating chamber 102 can obtain the second vacuum condition through the third pumping device.
  • the device acquires a third vacuum condition.
  • the transfer chamber 103 works under a sheet transfer pressure, generally at 0.1-0.3 Torr (pressure unit), and the transfer chamber 103 has a first vacuum condition to match the sheet transfer pressure of the transfer chamber 103.
  • the process chamber 101 works under a process pressure, such as 1 torr (pressure unit), and the process chamber 101 has a second vacuum condition to match the process pressure of the process chamber 101;
  • the heating chamber 102 works under a heating pressure, such as 0.1-0.3 Torr (pressure unit), and the heating chamber 102 has a third vacuum condition to match the heating pressure of the heating chamber 102, that is, the conversion chamber 103
  • the first vacuum condition of the process chamber 101 is different from the second vacuum condition of the process chamber 101
  • the first vacuum condition of the conversion chamber 103 is the same as the third vacuum condition of the heating chamber 102 .
  • the first vacuum condition of the conversion chamber 103, the second vacuum condition of the process chamber 101, and the third vacuum condition of the heating chamber 102 may all be the same or different. same.
  • the processing chamber 100 includes a first heating chamber 102 and a first process chamber 101, the first heating chamber 102 is used for heating the wafer, and the first process chamber 101 is used for heating Wafers are processed.
  • one processing chamber 100 is provided, and the processing chamber 100 is a heating chamber 102 or a process chamber 101 .
  • two processing chambers 100 are provided, and the two processing chambers 100 are two processing chambers 101 , or the two processing chambers 100 are two heating chambers 102 , or the two processing chambers 100 are one process chamber 101 and one heating chamber 102 .
  • the processing chambers 100 of a wafer processing device 11 are all configured as heating chambers 102 or process chambers 101
  • the processing chambers of the wafer processing device 11 used in conjunction with the wafer processing device 11 can 100 provides a processing chamber 100 different from the former.
  • the processing chamber 100 of the first wafer processing equipment 11 is a heating chamber 102
  • the processing chamber 100 of the second wafer processing equipment 11 is a process chamber 101 .
  • there are at least two process chambers 101 and/or heating chambers 102 that is, the processing chambers at least include a first heating chamber 102, a second heating chamber (not marked in the figure), and the first process chamber 101 and the second process chamber (not marked in the figure), wherein the first heating chamber 102 and the second heating chamber (not marked in the figure) are used to treat the first batch of The wafers and the second batch of wafers are subjected to heat treatment, and the first process chamber 101 and the second process chamber (not shown in the figure) are used to process the first batch of wafers and the second batch of wafers respectively.
  • there are two, three or more process chambers 101 there are two, three or more heating chambers 102 .
  • the base body 1 is provided with the processing chamber 100 and the conversion chamber 103 , and the driving device 4 is disposed on the base body 1 .
  • the substrate 1 is provided with the process chamber 101, the heating chamber 102 and the conversion Cavity 103.
  • the processing chamber 100 is disposed on the upper side or the lower side of the conversion chamber 103 , and the driving device 4 is disposed on a side of the conversion chamber 103 away from the processing chamber 100 .
  • the processing chamber 100 is disposed on the upper side of the conversion chamber 103
  • the driving device 4 is disposed on the lower side of the conversion chamber 103 .
  • the two bearing components 2 include a first bearing component 202 and a second bearing component 3 .
  • the number of the bearing assembly 2 can also be set to one. That is, the wafers carried by the carrier assembly 2 can be processed asynchronously through different processing chambers 100 , specifically after heating and then processing, or after processing and then heating.
  • the number of heating chambers 102 or the number of process chambers 101 is set to two, three or more, and the number of carrying assemblies 2 is set to at least two, different carrying assemblies 2 can be used Different wafers can be processed synchronously, and the wafers can also be locally processed or heated by different or the same carrier assembly 2 .
  • the number of the carrying assemblies 2 may also be set to be greater than the sum of the numbers of the process chambers 101 and the heating chambers 102 .
  • the number of the bearing components 2 can also be set to three. For example, while one carrier assembly 2 is being heated, another carrier assembly 2 is being processed, and the last carrier assembly 2 is docked with external equipment for wafer delivery.
  • one process chamber 101 and one heating chamber 102 can form a group of processing chambers 100, and one or more groups of processing chambers can be set on one wafer processing device 11.
  • the set of processing chambers 100 can simultaneously process one or more sets of wafers at the same time and/or at the same step.
  • the conversion chamber 103, the process chamber 101 and the heating chamber 102 is arranged in the base body 1 , and the process chamber 101 and the heating chamber 102 are located on the upper side of the conversion chamber 103 .
  • the process chamber 101 and the heating chamber 102 may also be located at the lower side of the conversion chamber 103 .
  • the process chamber 101 and the heating chamber 102 may also be located on the left or right side of the conversion chamber 103 .
  • the heating chamber 102 and the process chamber 101 may be located on different sides of the conversion chamber 103 .
  • the process chamber 101 is provided with a shower head, a shower panel or other structures, and the shower head is connected to the supply device 5, so that the wafers in the process chamber 101 can be coated, deposited, etched or other processes.
  • the shell of the process chamber 101 is configured as a rectangle.
  • the shape of the process chamber 101 may also be set as a square, a circle, a polygon or other shapes.
  • the shape of the process chamber 101 can also be set as a regular shape or an irregular shape.
  • the process chamber 101 is formed by a first cover 1011 and the base 1 , and the first cover 1011 is detachably disposed on the base 1 .
  • Such arrangement makes it easy to install, and facilitates maintenance, cleaning or replacement of structures in the process chamber 101 .
  • the heating chamber 102 is formed by a second cover 1021 and the base 1 , and the second cover 1021 is detachably disposed on the base 1 .
  • the supply device 5 is generally configured as a cabinet, and the supply device 5 can provide process raw materials. In some other embodiments, the supply device 5 can realize the proportioning of various ingredients in a fixed ratio.
  • the heating chamber 102 is provided with a heating assembly, and the heating assembly can heat the space in the heating chamber 102 . In some other embodiments, the heating assembly can also be arranged outside the heating chamber 102 .
  • the outer shell of the heating chamber 102 is set in a circular shape.
  • the shape of the heating cavity 102 can also be set as a square, a circle, a polygon or other shapes.
  • the shape of the heating cavity 102 can also be set as a regular shape or an irregular shape.
  • the conversion chamber 103 communicates with the process chamber 101 and the heating chamber 102 .
  • the communication here includes at least the following two communication states, taking two bearing components 2 as an example: (1) when the first bearing component 202 and the second bearing component 3 are respectively located in the heating chamber 102 and the When inside the process chamber 101, both the heating chamber 102 and the process chamber 101 communicate with the transition chamber 103; (2) when the first bearing assembly 202 and the second bearing assembly 3 are located in the When switching chamber 103 , both the heating chamber 102 and the process chamber 101 communicate with the switching chamber 103 .
  • the communication between the conversion chamber 103 and the process chamber 101 and the heating chamber 102 may also include: one of the process chamber 101 or the heating chamber 102 is in communication with the conversion chamber 103 .
  • the conversion chamber 103 communicates with the process chamber 101 and the heating chamber 102, that is, the driving device 4 can directly drive the first bearing assembly 202 and/or the second bearing assembly 3 in the Moving between the heating chamber 102 and the conversion chamber 103, the driving device 4 can directly drive the first bearing assembly 202 and/or the second bearing assembly 3 between the process chamber 101 and the conversion chamber.
  • the driving device 4 can transport the first carrier assembly 202 and/or the second carrier assembly 3 to the process chamber 101 through the heating chamber 102, or the The driving device 4 can transport the first carrier assembly 202 and/or the second carrier assembly 3 to the heating chamber 102 via the process chamber 101 .
  • the first support member and the second support member may be configured in the shape of a disc, a plate, a rod or other shapes. Both the first support member and the second support member are movably disposed in the conversion chamber 103 , and the driving device 4 is disposed on the base body 1 . In use, the driving device 4 drives the first bearing assembly 202 and the second bearing assembly 3 to move between the process chamber 101 , the heating chamber 102 and the conversion chamber 103 .
  • the moving between includes: driving the carrier assembly 2 to move between the process chamber 101 and the transfer chamber 103 ; driving the carrier assembly 2 to move between the heating chamber 102 and the transfer chamber 103 moving between, driving the carrier assembly 2 to move between the process chamber 101 and the heating chamber 102, driving the carrier assembly 2 to move between one process chamber 101 and the other process chamber 101 , driving the carrying assembly 2 to move between one heating chamber 102 and the other heating chamber 102 .
  • the carrier assembly 2 when the carrier assembly 2 is directly between the process chamber 101 and the heating chamber 102, between one of the process chambers 101 and the other process chamber 101, or between one of the heating chambers 102 and the other When moving between one heating chamber 102, it can be between the process chamber 101 and the heating chamber 102, between the process chamber 101 and the process chamber 101, or between the heating chamber 102 and the heating chamber A switch device is provided between 102 to control the on-off between two adjacent chambers.
  • Fig. 5 is a schematic structural diagram of the first driving mechanism in the second embodiment of the present invention.
  • the drive device 4 includes a first drive mechanism 401, a second drive mechanism 402 and a converter 403; the converter 403 is arranged in the conversion cavity 103, and the first drive mechanism 401 Connected with the converter 403, the first driving mechanism 401 is used to drive the converter 403 to move or rotate; the bearing assembly 2 is set on the converter 403, and the second driving mechanism 402 is set on the On the side of the converter 403 , the second driving mechanism 402 is used to drive the carrier assembly 2 to move between the processing chamber 100 and the conversion chamber 103 .
  • the second driving mechanism 402 is used to drive the carrying assembly 2 between the process chamber 101 and the heating chamber 102.
  • the transition chamber 103 is moved, and/or the second driving mechanism 402 is used to drive the carrier assembly 2 to move between the heating chamber 102 and the transition chamber 103 .
  • the converter 403 is set as a support plate, the converter 403 is provided with a hollow, and the bearing assembly 2 is disposed in the hollow.
  • the first driving device 4 is a rotating motor, and the rotating shaft of the rotating motor is connected to the converter 403, so that the converter 403 can rotate with the rotation of the rotating motor, thereby driving the bearing assembly 2 Horizontal rotation, that is, to adjust the position of the bearing assembly 2 in the horizontal plane.
  • the carrying assembly 2 can be moved from the position at the lower side of the process chamber 101 to the position at the lower side of the heating chamber 102 . It is also possible to move the carrying assembly 2 from the position at the lower side of the heating chamber 102 to the position at the lower side of the process chamber 101 through adjustment.
  • the second driving device 4 is an electric cylinder, an air cylinder, a worm gear or other structures.
  • the second driving mechanism 402 is vertically arranged, and the second driving device 4 can drive the first carrying assembly 202 and/or the second carrying assembly 3 to move up and down during use, that is, to adjust the carrying assembly 2
  • the high and low positions of the first carrier assembly 202 and the second carrier assembly 3 can be moved between the process chamber 101 , the heating chamber 102 and the conversion chamber 103 .
  • the fixed part of the second driving mechanism 402 is disposed on the lower side of the conversion chamber 103
  • the movable part of the second driving mechanism 402 is disposed in the conversion chamber 103 .
  • Such setting can reduce the space size of the transition cavity 103, avoiding the space setting of the transition cavity 103 too large, increasing the difficulty of manufacturing, or increasing the difficulty of manufacturing the required environment of the transition cavity 103.
  • first driving mechanism 401 and/or the second driving mechanism 402 may also be disposed on the front side, rear side, left side, right side or other orientations of the conversion chamber 103 .
  • the inner diameter of the hollow part is smaller than the outer diameter of the carrying assembly 2, so that the carrying assembly 2 can be lowered to the Converter 403, and is made by the converter 403, so that the movable part of the second driving mechanism 402 can be separated from the bearing assembly 2, and vice versa.
  • Fig. 6 is a schematic structural diagram of the third driving mechanism in the second embodiment of the present invention.
  • the converter 403 is detachably connected to the first driving mechanism 401 .
  • the driving device 4 also includes a third driving mechanism 404; the third driving mechanism 404 is arranged on one side of the converter 403, and the third driving mechanism 404 is used to drive the converter 403 and the carrying assembly 2 moves.
  • the lower side of the converter 403 is provided with irregular protrusions
  • the movable end of the first driving mechanism 401 is provided with a groove matching the irregular protrusions
  • the adapter and the first driving mechanism 401 are connected through the protrusion and the groove
  • the third driving mechanism 404 is disposed on the lower side of the converter 403 .
  • the third drive mechanism 404 lifts the converter 403 upward so that the converter 403 is separated from the first drive mechanism 401, that is, the second drive mechanism 402 is replaced by the third drive mechanism 404
  • the carrying assembly 2 is made to move between the conversion chamber 103 and the processing chamber 100 .
  • the driving device 4 also includes a connection mechanism (not shown in the figure); the connection mechanism is arranged on the carrier assembly 2 or the converter 403, ) is provided with a first clamping part, the carrier assembly 2 or the converter 403 is provided with a second clamping part adapted to the first clamping part, and the connecting mechanism is used to connect the converter 403 and the connectors.
  • the first clamping part is clamped to the second clamping part through the connection mechanism, so that the carrier assembly 2 and the converter 403 are integrated, so that the second drive
  • the converter 403 can achieve a linkage effect, so that all the bearing components 2 on the converter 403 move up and down synchronously.
  • the sealing method between the driving device 4 and the base body 1 is dynamic sealing.
  • the form of the dynamic seal may be a magnetic fluid seal.
  • the inactive part of the second driving mechanism 402 is integrally disposed outside the conversion chamber 103 , which can reduce impurities between the fixed part and the movable part of the second driving mechanism 402 from entering the conversion chamber 103 .
  • the converter 403 may also be set in the form of a belt or crawler conveyor mechanism, and the bearing assembly 2 is set on the belt or crawler conveyor mechanism.
  • the first driving mechanism 401 is configured as a manipulator, a clamping mechanism or other mechanisms, and the first driving mechanism 401 moves the first carrying assembly 202 and/or the second carrying assembly 3 to the second driving Institution 402 on.
  • the second driving mechanism 402 drives the carrying assembly 2 to move into the process chamber 101 or the heating chamber 102 .
  • both of the two second driving mechanisms 402 are used to drive the carrying assembly 2 to move.
  • the first second driving mechanism 402 drives the carrying assembly 2 to move to the heating chamber 102
  • the second second driving mechanism 402 drives the carrying assembly 2 to move to the process chamber 101 .
  • the number of process chambers 101 can be set to one, three, four or other numbers.
  • the number of heating chambers 102 can be set to two, three or other numbers.
  • the number of the first bearing assembly 202 and the second bearing assembly 3 can be set to one, three, four or other numbers.
  • the number of the second driving mechanism 402 can be set to one, two, three, four or other numbers. It is worth mentioning that, in actual setting, the same second driving mechanism 402 can be set to simultaneously control the lifting of the bearing assembly 2 at two, three or more positions. For example, five carrying assemblies 2 are provided, and two second driving mechanisms 402 are provided. One of the second driving mechanisms 402 controls the lifting of two carrying assemblies 2, and the other of the second driving mechanisms 402 Control the lifting of the three bearing assemblies 2 .
  • the two second driving mechanisms 402 can control the lifting of the same carrier.
  • the carrier assembly 2 is provided with N support parts 201, and the support parts 201 are all used to support the wafer, and N is an integer greater than or equal to .
  • the carrying assembly 2 is provided with twenty-five supporting parts 201 , so that one carrying assembly 2 can set twenty-five wafers at the same time.
  • the number of supporting parts 201 can also be set in any other number.
  • it also includes a seal (not shown in the figure) provided on the carrier assembly 2, and the seal is used to isolate the transition chamber 103 from the process chamber 101 and/or the The chamber 102 is heated.
  • the sealing member (not shown in the figure) is arranged on the first bearing component 202 and the second bearing component 3, when the first supporting member or the second When the supporting member moves into the process chamber 101 or the heating chamber 102 , the side of the sealing member abuts against the side wall of the process chamber 101 or the heating chamber 102 . At this time, the sealing member and the first bearing assembly 202 or the second bearing assembly 3 isolate the process chamber 101 and/or the heating chamber 102 from the conversion chamber 103 . In this way, only the heating chamber 102 is heated during heating, and only the wafer in the process chamber 101 is processed during process processing.
  • movable plates, gate valves or other structural members may be provided at the connection between the process chamber 101 and/or the heating chamber 102 and the conversion chamber 103, and the movable plates may be driven by setting a moving mechanism , the gate valve or the other structural components move.
  • the process chamber 101 and the process chamber 101 can still be separated by the movable plate, the gate valve or the other structural members. /or communication between the heating chamber 102 and the conversion chamber 103 .
  • Fig. 8 is a schematic structural diagram of the fourth driving mechanism in the fourth embodiment of the present invention.
  • a fourth driving mechanism 6 is also included; the fourth driving mechanism 6 is arranged on one side of the bearing assembly 2, and the fourth driving mechanism 6 is used to drive the bearing assembly 2 to rotate. In some embodiments, the fourth driving mechanism 6 is arranged on one side of the bearing assembly 2, and the fourth driving mechanism 6 is used to drive the bearing assembly 2 to rotate.
  • the third driving mechanism 404 is disposed in the conversion cavity 103 .
  • the third driving mechanism 404 is a rack and pinion mechanism, the gear of the third driving mechanism 404 is arranged on the first bearing assembly 202 or the second bearing assembly 3 , and the rack of the third driving mechanism 404 It is arranged in the conversion cavity 103 , and the driving of the third driving mechanism 404 is connected with the rack.
  • the drive drives the rack to move, and drives the first bearing assembly 202 and/or the second bearing assembly 3 to rotate at a certain angle through the gear.
  • one or more fourth drive mechanisms 6 may be provided.
  • the corresponding wafer processing position of the fourth drive mechanism 6 may be provided with rotation function or function to adjust the angle.
  • there may be multiple fourth driving mechanisms 6 and each of the fourth driving mechanisms 6 is provided in a one-to-one correspondence with each of the carrying assemblies 2 .
  • the third driving mechanism 404 and the converter 403 may be set at different heights.
  • the third driving mechanism 404 can also be arranged on the converter 403 .
  • the third driving mechanism 404 can also be set in the form of double gears.
  • the third driving mechanism 404 can also be arranged in the movable end of the second driving mechanism 402, and at this time, the third driving mechanism 404 is set as a rotating cylinder, a rotating motor or other driving Both are available. It is worth mentioning that when the third driving mechanism 404 is disposed on the second driving mechanism 402 , the third driving mechanism 404 will move along with the movement of the movable end of the second driving mechanism 402 .
  • the base body 1 includes a first fixing part 104 and a second fixing part 105; the process chamber 101 and the heating chamber 102 are arranged in the first The fixed part 104, the first fixed part 104 and the second fixed part 105 form the conversion cavity 103; the fifth drive mechanism 7 is arranged on the first fixed part 104 and/or the second fixed part 104 The fixing part 105, the fifth driving mechanism 7 is used to drive the first fixing part 104 or the second fixing part 105 to move.
  • the first fixing part 104 is arranged on the upper side of the second fixing part 105, and the process chamber 101 and the heating chamber 102 are arranged on the upper side of the first fixing part 104 .
  • the first fixing part 104 and the second fixing part 105 surround the conversion cavity 103 .
  • the fifth driving mechanism 7 is an air cylinder, an electric cylinder or other mechanisms. One end of the fifth driving mechanism 7 is fixed on the second fixing part 105 . When in use, by opening the fifth drive mechanism 7, the movable end of the fifth drive mechanism 7 moves to fit with the first fixing part 104, and as the fifth drive mechanism 7 continues to be opened, the The fifth driving mechanism 7 pushes up the first fixing portion 104 to open the conversion cavity 103 .
  • the structure in the conversion chamber 103 can be cleaned, repaired or replaced.
  • the fifth driving mechanism 7 is controlled to move in reverse, and the first fixing part 104 automatically descends to fit with the second fixing part 105 under the action of gravity.
  • the top end of the fifth driving mechanism 7 can be fixed to the first fixing part 104, so that as the fifth driving mechanism 7 shrinks, the first fixing part 104 and the second fixing part The part 105 will reach the bonded state.
  • the positional relationship between the first fixing part 104 and the second fixing part 105 may be the front-back direction and the left-right direction. In some other embodiments, the positional relationship between the first fixing part 104 and the second fixing part 105 may also be an oblique direction.
  • a sealing member may be provided between the first fixing part 104 and the second fixing part 105 for sealing, so as to improve the airtightness.
  • the fifth driving mechanism 7 can be provided in multiples.
  • a heating device 8 is also included; the heating device 8 communicates with the conversion chamber 103 , and the heating device 8 is used to heat the conversion chamber 103 .
  • the heating device 8 is arranged in the conversion chamber 103 , and the heating device 8 generates heat to heat the conversion chamber 103 .
  • the heating device 8 may be disposed in the conversion chamber 103 in the form of a heating plate, a heating wire, or a heating sheet. In some other embodiments, the heating device 8 can also be set in the form of a heating tube or a heating rod. In some other embodiments, the heating device 8 may also be configured as a device for emitting light, and the light is irradiated on the wafer to generate heat. For example, the light is infrared light.
  • a first air extraction device 9 is also included; gas extraction.
  • the transfer chamber 103 is provided with a nozzle, and the first air extraction device 9 communicates with the transfer chamber 103 through the nozzle. Since it is necessary to ensure that the transition chamber 103 is in a vacuum state during use, the first pumping device 9 is provided to facilitate the extraction of the gas in the transition chamber 103 to realize the vacuum state of the transition chamber 103 .
  • a second air extraction device (not shown in the figure) is also included; the second air extraction device communicates with the processing chamber 100, and the second air extraction device is used to process the The gas in chamber 100 is pumped out.
  • the processing chamber 100 is provided with air holes, and the second air extraction device (not shown in the figure) communicates with the processing chamber 100 through the air holes.
  • FIG. 10 is a schematic diagram of a three-dimensional structure of a wafer processing system in an embodiment of the present invention.
  • the present invention includes a transfer device 10 and the wafer processing device 11 described in any of the above embodiments; the wafer processing device 11 is provided with a transfer channel, and the transfer device 10 is connected to the transfer device The channel is connected, and the transport device 10 is used to transport the wafer.
  • a transmission channel is provided between the transmission equipment 10 and the wafer processing equipment 11, and the transmission equipment 10 is provided with a manipulator and a driving part, and the driving part can drive the The robot moves.
  • the transfer device 10 is capable of transferring external wafers to the wafer processing device 11 .
  • the transfer device 10 can transfer the wafers of the wafer processing device 11 to the outside.
  • each of the wafer processing devices 11 is respectively arranged on different sides of the transfer device 10, and the transfer device 10 is used to transfer wafers.
  • the wafers are sent to each of the wafer processing equipment 11, and the transfer equipment 10 is used to transport the wafers of each of the wafer processing equipment 11.
  • the transfer device 10 is capable of picking up and delivering wafers to the three wafer processing devices 11 .
  • the number of the wafer processing equipment 11 on one side of the transfer equipment 10 can also be set to two, four, five or other numbers.
  • a front-end processing device 12 is also included; the front-end processing device 12 is arranged on one side of the transmission device 10, and the front-end processing device 12 is provided with a wafer transfer box (not shown in the figure),
  • the transfer equipment 10 transports the wafers to the wafer cassette and/or the wafer processing equipment 11 , and the front-end processing equipment 12 is used to transport the wafer cassette.
  • the transmission device 10 can control the front-end processing device 12 Carry out pick-and-place of the wafer.
  • the wafer transfer cassette (not shown in the figure) is arranged in the front-end processing equipment 12, so that the wafers can be transported through the wafer transfer cassette during transfer.
  • a vacuum or dust-free environment may be set in the front-end processing equipment 12 . Place the wafers of the wafer processing equipment 11 in the front-end processing equipment 12 into the wafer flow box, or transport the external wafers to the front-end processing equipment 12 through the wafer flow box Inside, and then transported to the transfer equipment 10 or the wafer processing equipment 11, the wafer can be prevented from contacting the outside world.
  • a clamping mechanism, grabbing mechanism or other transfer mechanism can be set in the front-end processing equipment 12, and the wafer transfer between the wafer flow box and the transfer equipment 10 can be completed through the above-mentioned mechanism. movement between.
  • the present invention also includes a FOUP 13 and a transfer device (not shown); the FOUP 13 is arranged on the front-end processing equipment 12, and the front-end processing equipment 12 is used to The FOUP is transported to the FOUP 13 ; the transport device is used to transport the FOUP 13 .
  • the FOUP 13 is movably arranged on the front-end processing equipment 12 .
  • the FOUP is transported into the FOUP 13, and then the FOUP 13 is transferred by the transfer device (not shown in the figure).
  • the FOUP in the FOUP 13 is transferred to the front-end processing equipment 12 by the transfer device.
  • the wafer transfer pod is set to be transferred through the wafer transfer pod 13, further reducing the possibility of the wafer being contaminated.
  • the transfer device is configured to facilitate the transfer of the FOUP 13 .
  • an opening and closing structure may be provided on the FOUP 13 .
  • the opening and closing structure is controlled to open, so that the FOUP inside can be taken out.
  • the same structure as the opening and closing structure can also be set on the front-end processing equipment 12 to limit the input and output of the wafer transfer box, and at the same time, the front-end processing equipment can be improved 12 sealing effect.
  • Step 1 The first batch of wafers and the second batch of wafers are simultaneously transported to the first position and the second position in the conversion chamber 103 by a robotic arm (not shown), wherein the conversion chamber 103 The first position and the second position correspond to the first heating chamber 102 and the second heating chamber (not marked in the figure) in the plurality of processing chambers;
  • Step 2 drive the first carrier (not shown) coupled with the robot arm (not shown) by the driving device 4 to transfer the first batch of wafers and the second batch of wafers at the first position in the conversion chamber 103
  • the second batch of wafers on the position is correspondingly moved up to the first heating chamber 102 and the second heating chamber (not shown in the figure) among the several processing chambers for heat treatment;
  • Step 3 drive the rotary support (not shown) coupled with the first carrier (not shown) through the driving device 4 to move the first batch of wafers and the second batch of wafers that have been heat-treated to the third position and the fourth position in the conversion chamber 103, wherein the third position and the fourth position in the conversion chamber 103 correspond to the first process chamber 101 and the second process chamber in the plurality of processing chambers (not marked in the figure);
  • Step 4 drive the second carrier (not shown) coupled with the rotating bracket (not shown in the figure) through the driving device 4 to transfer the first batch of crystals at the third position in the conversion chamber 103
  • the second batch of wafers at the circle and the fourth position correspondingly move up to the first process chamber 101 and the second process chamber (not shown in the figure) among the several processing chambers for process treatment.
  • the first carrying part, the rotating support and the second carrying part are components in the carrying assembly, and the first carrying part, the rotating support and the second carrying part are arranged in the conversion chamber 103 inside.
  • the first carrier and the second carrier are in the form of components.
  • the driving device includes one or more driving mechanisms to realize the following function: drive the first carrier (not shown) to move the first carrier at the first position in the conversion chamber 103 A batch of wafers and a second batch of wafers at the second position move to the first heating chamber 102 and the second heating chamber (not shown in the figure) in the plurality of processing chambers for heat treatment; drive the rotating support (in the figure not shown) moving the heat-treated first batch of wafers and the second batch of wafers to the third position and the fourth position in the conversion chamber 103; and driving the second carrier (not shown) The first batch of wafers on the third position in the conversion chamber 103 and the second batch of wafers on the fourth position are moved to the first process chamber 101 and the second process chamber in the plurality of processing chambers (Fig.
  • a semiconductor device includes a reaction chamber unit, a sinking space is arranged in the reaction chamber unit, a rotating support is arranged in the sinking space, and four workstations are arranged on the rotating support. , can also be multiple workstations, and the sunken space is also provided with an upper cover.
  • Each workstation is used to place a wafer boat, for example, it can carry the first batch of wafers, such as 50 wafers, and a preheating chamber A, a preheating chamber B, a process chamber A and a process chamber B are arranged above the upper cover.
  • the first batch of wafers and the second batch of wafers are simultaneously transferred to the sinking space by the robot arm, and then the lifting mechanism in the driving device sends the wafer boat to the preheating chamber A and preheating chamber B for preheating.
  • the wafer boat is lowered into the sinking space through the lifting mechanism in the driving device, and rotated by a certain angle by the rotating support, such as 180° , and then sent to process chamber A and process chamber B for processing, at least within the second predetermined time for processing, such as about 1h; while processing, the robot arm continues to transfer wafers to the empty wafer boat, and then Enter preheating chamber A and preheating chamber B for preheating.
  • the wafer boat is lowered into the sinking space, and the rotating bracket rotates at a certain angle, such as 180°.
  • the wafers that have completed the process are transported out by the robot arm, and the preheated wafer boat enters the process chamber for processing. craft. The above steps are then recycled.
  • the positions of the preheating chamber and the process chamber can be exchanged, and the preheating chamber can be used as a post-processing chamber. According to the process requirements, different processes can be set to meet the pre-treatment and post-treatment.
  • Step 1 The first batch of wafers and the second batch of wafers are simultaneously transported to the first position and the second position in the conversion chamber 103 by a carrier component (such as a robot arm), wherein the wafers in the conversion chamber 103 are The first position and the second position correspond to the first heating chamber 102 and the second heating chamber (not shown in the figure) in the plurality of processing chambers;
  • a carrier component such as a robot arm
  • Step 2 drive the carrying assembly (such as a robot arm) through the driving device 4 to move the first batch of wafers at the first position in the conversion chamber 103 and the second batch of wafers at the second position correspondingly upward to the several processing
  • the first heating chamber and the second heating chamber in the chamber perform heat treatment
  • Step 3 driving the carrying assembly (such as a rotating support) by the driving device to move the heated first batch of wafers and the second batch of wafers to the third position and the fourth position in the conversion chamber 103, wherein the third position and the fourth position in the conversion chamber 103 correspond to the first process chamber 101 and the second process chamber (not marked in the figure) in the plurality of processing chambers;
  • Step 4 drive the carrying assembly (such as a manipulator) through the driving device 4 to move the first batch of wafers at the third position in the conversion chamber 103 and the second batch of wafers at the fourth position to move upwards to the corresponding Process processing is performed in the first process chamber 101 and the second process chamber (not shown in the figure) among the above-mentioned several processing chambers.
  • the carrying assembly such as a manipulator
  • the carrying assembly includes one or more manipulators and one or more rotating supports.
  • the driving device 4 includes one or more driving mechanisms, so as to realize the above functions, it is not limited here.
  • a control method suitable for the above-mentioned wafer processing equipment is provided, as follows:
  • Step 1 The first batch of wafers and the second batch of wafers are simultaneously transported to the first position and the second position in the conversion chamber 103 by a carrier component (such as a robot arm), wherein the wafers in the conversion chamber 103 are The first position and the second position correspond to the first process chamber 101 and the second process chamber (not shown in the figure) among the plurality of processing chambers;
  • a carrier component such as a robot arm
  • Step 2 drive the carrying assembly (such as a robot arm) through the driving device 4 to move the first batch of wafers at the first position in the conversion chamber 103 and the second batch of wafers at the second position correspondingly upward to the several processing
  • the first process chamber 101 and the second process chamber (not shown in the figure) in the cavity are processed;
  • Step 3 using a driving device to rotate the carrying assembly (such as a rotating bracket) to move the processed first batch of wafers and the second batch of wafers to the third position and the fourth position in the conversion chamber 103, wherein the third position and the fourth position in the conversion chamber 103 correspond to the first heating chamber 102 and the second heating chamber (not marked in the figure) in the plurality of processing chambers;
  • a driving device to rotate the carrying assembly (such as a rotating bracket) to move the processed first batch of wafers and the second batch of wafers to the third position and the fourth position in the conversion chamber 103,
  • the third position and the fourth position in the conversion chamber 103 correspond to the first heating chamber 102 and the second heating chamber (not marked in the figure) in the plurality of processing chambers;
  • Step 4 drive the carrying assembly (such as a manipulator) through the driving device 4 to move the first batch of wafers at the third position in the conversion chamber 103 and the second batch of wafers at the fourth position to move upwards to the corresponding
  • the first heating chamber 102 and the second heating chamber (not shown in the figure) among the several processing chambers are heat treated.
  • the carrying assembly includes one or more manipulators and one or more rotating supports.
  • the driving device 4 includes one or more driving mechanisms, so as to realize the above functions, it is not limited here.
  • the above-mentioned second embodiment of the present invention is to perform process processing after pre-heating treatment
  • the above-mentioned third embodiment of the present invention is to perform process processing first and then heat treatment, which is determined according to different wafer processing processes.
  • FIG. 11 is a schematic flowchart of a method for controlling wafer processing equipment in the above-mentioned embodiment of the present invention.
  • An embodiment of the present invention also provides a method for controlling wafer processing equipment, the control method is used to control the wafer processing equipment described in any of the above embodiments, including:
  • the wafer processing equipment 11 is used in conjunction with the front-end processing equipment 12 and the transmission equipment 10 .
  • the processed or unprocessed wafer is transferred through the front-end processing equipment 12, and the unprocessed wafer is transported to the carrier assembly 2 of the wafer processing equipment 11 through the transmission equipment 10, and then passed through the driving device 4 Drive the carrying assembly 2 to move upwards into the processing chamber 100, process the wafer on the carrying assembly 2, and control the carrying assembly 2 to descend into the space of the conversion chamber 103 through the driving device 4 after the reprocessing is completed, Afterwards, the processed wafers are transported to the front-end processing equipment 12 through the transport equipment 10 to complete the processing.
  • the drive device 4 includes a first drive mechanism 401, a second drive mechanism 402, and a converter 403; the S2 specifically includes:
  • the second drive mechanism 402 drives the converter 403 to rotate horizontally, and then adjusts the position of the bearing assembly 2 on the converter 403, so that the same bearing assembly 2 Corresponding to different processing chambers 100, and through the action of the second driving mechanism 402, the carrying assembly 2 can be transported into different processing chambers 100 for processing.
  • the processing chamber 100 is arranged on the upper side or the lower side of the conversion chamber 103, and the driving device 4 is arranged on the side of the conversion chamber 103 away from the processing chamber 100;
  • the S22 specifically includes: using the second driving mechanism 402 to drive the carrying assembly 2 to move up and down to the processing chamber 100 .
  • the processing chamber 100 is arranged on the upper side of the conversion chamber 103
  • the driving device 4 is arranged on the lower side of the conversion chamber 103, and is driven by the second driving mechanism 402 during use.
  • the carrying assembly 2 moves up and down to realize the movement of the carrying assembly 2 between the conversion chamber 103 and the processing chamber 100 .
  • each of the second driving mechanisms 402 works independently;
  • S22 further includes: driving the carrying assembly 2 to move up and down to the processing chamber 100 through at least two second driving mechanisms 402 .
  • different second drive mechanisms 402 are used to carry out lifting control, which is convenient for each wafer processing position or each carrier assembly. 2 controls.
  • processing chambers 100 are provided, and each processing chamber 100 works independently, and several processing chambers 100 include at least a first heating chamber 102 and a first process chamber 101;
  • the S2 and the S3 specifically include:
  • the present invention by providing multiple processing chambers 100, it is convenient to perform different processing through different processing chambers 100, and by providing at least one heating chamber 102 and at least one process chamber 101, it is possible to The same wafer processing equipment 11 heats and processes the same wafer.
  • heating chambers 102 and two processing chambers 100 there are two heating chambers 102 and two processing chambers 100;
  • the S31 specifically includes:
  • the S32 specifically includes:
  • different heating chambers 102 and different process chambers 101 can be used to process wafers on the same carrier assembly 2 Perform step-by-step heating or processing.
  • the carrying assembly 2, the heating chamber 102 and the process chamber 100 are all provided in two;
  • the S31 specifically includes: driving the two carrier assemblies 2 to move to the two heating chambers 102 respectively through the driving device 4, and performing the first batch of wafers on the two carrier assemblies 2 and the second batch of wafers on the two carrier assemblies 2.
  • the batch of wafers is heated in the first heating chamber 102 and the second heating chamber respectively at least within the first predetermined time;
  • the S32 specifically includes: using the driving device 4 to drive the two carrier assemblies 2 to move to the two process chambers 101 respectively, and to process the first batch of wafers on the two carrier assemblies 2 and the second batch of wafers on the two carrier assemblies 2.
  • the batch of wafers is processed in the first process chamber 101 and the second process chamber respectively at least within the second predetermined time.
  • the heating chamber 102 and the processing chamber 100 can be synchronized through different carrying assemblies 2 Processing, that is, heat processing at the same time, or process processing at the same time, or one or a group of heat processing, and another or another group of process processing.

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Abstract

本发明提供了一种晶圆处理设备、晶圆处理系统及控制方法。该晶圆处理设备包括驱动装置、转换腔、处理腔和承载组件；承载组件设置于转换腔内，处理腔与转换腔连通，所述处理腔用于处理晶圆，承载组件用于承载晶圆，驱动装置用于调整承载组件在转换腔的位置，驱动装置并用于驱动承载组件在转换腔和处理腔之间移动。本发明的晶圆处理设备能够将需要进行处理的晶圆通过驱动装置直接输送至处理腔进行加工，对需要调整的晶圆或无需直接加工的晶圆可以在转换腔内进行调整或留存，能够减少不同批次间晶圆占用工作机构的时间和等待的时间，同时也能通过转换腔和承载组件提供同步对多片或多批次晶圆进行加工的基础条件。

Description

晶圆处理设备、晶圆处理系统及控制方法 技术领域
本发明涉及半导体加工技术领域，尤其涉及一种晶圆处理设备、晶圆处理系统及控制方法。
背景技术
晶圆处理被用于通过技术来处理半导体，所述技术包括：物理气相沉积(Physical Vapor Deposition，PVD)、化学气相沉积(Chemical vapor deposition，CVD)、等离子体增强化学气相沉积(Plasma enhanced chemical vapor deposition，PECVD)、原子层沉积(Atomic layer deposition，ALD)、等离子体增强原子层沉积(Plasma enhanced atomic layer deposition，PEALD)、脉冲沉积层(Pulse deposition layer，PDL)、分子层沉积(Molecular layer deposition，MLD)、等离子体增强脉冲沉积层(Plasma enhanced pulsed deposition layer，PEPDL)处理、蚀刻和抗蚀剂去除等。
晶圆处理时需要先对晶圆进行预热，现有的晶圆处理设备，对晶圆进行预热时通常为在处理设备上设置加热板，处理工艺之前通过加热板对晶圆进行预热，达到预定处理条件之后再进行晶圆处理。
通过这样的处理方式使得在对晶圆进行处理时造成占用时间长、效率低的问题。
发明内容
本发明的目的在于提供一种晶圆处理设备、晶圆处理系统及控制方法，该晶圆处理设备能够将需要进行处理的晶圆通过所述驱动装置直接输送至所述处理腔进行加工，对需要调整的晶圆或无需直接加工的晶圆可以在所述转换腔内 进行调整或留存，能够减少不同批次间晶圆占用工作机构的时间和等待的时间，加快晶圆的加工效率，同时也能通过所述转换腔和所述承载组件提供同步对多片或多批次晶圆进行加工的基础条件，解决现有技术中在对晶圆进行处理时占用时间长、效率低下的问题。
为实现上述目的，本发明提供了一种晶圆处理设备，该晶圆处理设备包括驱动装置、转换腔、处理腔、第一抽气装置、第二抽气装置和承载组件；所述处理腔与所述转换腔连通；其中，所述转换腔用于提供密封空间，所述第一抽气装置与所述转换腔连通，所述第一抽气装置用于将所述转换腔内的气体抽出，以对所述转换腔进行第一真空处理；其中，所述处理腔用于处理晶圆，所述第二抽气装置与所述处理腔连通，所述第二抽气装置用于将所述处理腔内的气体抽出，以对所述处理腔进行第二真空处理；所述承载组件设置于所述转换腔内，所述承载组件用于承载晶圆，所述驱动装置用于调整所述承载组件在所述转换腔的位置，所述驱动装置并用于驱动所述承载组件在所述转换腔和所述处理腔之间移动。
本发明的晶圆处理设备的有益效果在于：通过设置所述处理腔对放置于所述处理腔内的晶圆进行处理。此处处理包括：加热、沉积、镀膜、蚀刻或其他处理方式。通过设置承载组件对晶圆进行支撑。通过设置所述转换腔，并将所述转换腔以第一真空处理来提供密封空间，能够在所述转换腔内对晶圆进行调整或留存，并且所述处理腔以第二真空处理来提供密封空间，如此通过所述驱动装置、所述转换腔和所述处理腔能够灵活控制多批次晶圆在第一真空条件下的转换腔内的调整或留存，避免现有技术在晶圆进入处理腔之前在非真空环境下进行转换使得晶圆品质受损，本发明通过设置第一真空条件的转换腔进行晶圆留存可以灵活控制不同批次的晶圆运送至所述处理腔进行处理，使得晶圆在第一真空条件下的转换腔和在第二真空条件下的处理腔中之间确保晶圆不受损的前提下自由移动，以提供同时加工多件或多批次晶圆的基础条件。通过设置所述驱动装置带动承载组件在转换腔和处理腔之间移动，或者调整所述承载组 件在所述转换腔的位置。由此可见，本申请的晶圆处理设备通过所述驱动装置、所述转换腔和所述处理腔能够灵活控制晶圆在转换腔的调整或留存，再或灵活控制晶圆运送至所述处理腔进行处理，同时可以根据需要在一个承载组件上放置多个晶圆进行处理或流转，降低单个或单组晶圆占用处理腔的时间，能够提升处理设备的处理效率，此外，也能够根据所述驱动装置的灵活运用降低不同批次晶圆之间的输送时间或之间进行处理的间隔时间，进一步提升处理设备的处理效率。
在一种可行的方案中，所述处理腔至少包括第一加热腔和第一工艺腔，所述第一加热腔用于对晶圆进行加热，所述第一工艺腔用于对晶圆进行工艺加工。。其有益效果在于：通过将所述处理腔至少设置为第一加热腔和第一工艺腔，能够对不同批次晶圆同步进行加热处理和工艺加工，加热处理可以是前预热处理或后加热处理，以解决现有技术中在对晶圆进行预热或加热处理时占用时间长、效率低下的问题。同时，由于所述转换腔提供第一真空条件，使得不同批次晶圆在进入第一加热腔或第一工艺腔之前可以在第一真空条件下的转换腔内进行留存或流转，避免现有技术在晶圆进入处理腔之前在非真空环境下进行转换使得晶圆品质受损，本发明通过设置第一真空条件的转换腔进行晶圆留存可以灵活控制不同批次的晶圆运送至所述加热腔或工艺腔进行处理，能够减少不同批次晶圆预热处理等待时间，加快不同批次晶圆的加工效率。
在一种可行的方案中，所述处理腔至少包括第一加热腔、第二加热腔，以及第一工艺腔和第二工艺腔，其中所述第一加热腔、第二加热腔用于分别对第一批晶圆和第二批晶圆进行加热处理，所述第一工艺腔、第二工艺腔用于分别对第一批晶圆和第二批晶圆进行工艺加工。。其有益效果在于：通过将所述工艺腔和所述加热腔分别设置为至少两个，能够对同一批晶圆进行依次进行加热处理和工艺加工，也能够同时对第一批和第二批晶圆同步进行进行加热处理和工艺加工，以解决现有技术中在对晶圆进行预热或加热处理时占用时间长、效率低下的问题，大大提高批量晶圆的工艺加工效率。同时，由于所述转换腔提 供第一真空条件，使得第一批晶圆和第二批晶圆分别进入第一加热腔、第一工艺腔，和第二加热腔、第二工艺腔之前可以在第一真空条件下的转换腔内进行留存或流转，避免现有技术在晶圆进入处理腔之前在非真空环境下进行转换使得晶圆品质受损，本发明通过设置第一真空条件的转换腔进行晶圆留存可以灵活控制不同批次的晶圆运送至所述第一加热腔、第二加热腔、第一工艺腔和第二工艺腔进行处理，能够减少不同批次晶圆预热处理等待时间，加快不同批次晶圆的加工效率。
在一种可行的方案中，所述处理腔设置于所述转换腔上侧或下侧，所述驱动装置设置于所述转换腔远离所述处理腔的一侧。其有益效果在于：通过将所述处理腔设置于所述转换腔的上侧或下侧，便于所述承载组件的安装，便于对晶圆形成支撑，并通过将所述驱动装置设置于所述转换腔远离所述处理腔的一侧，便于所述驱动装置对所述承载组件的驱动，便于对晶圆的输送。
在一种可行的方案中，所述驱动装置包括第一驱动机构、第二驱动机构和转换器；所述转换器设置于所述转换腔，所述第一驱动机构与所述转换器连接，所述第一驱动机构用于带动所述转换器移动或转动；所述承载组件设置于所述转换器，所述第二驱动机构设置于所述转换器一侧，所述第二驱动机构用于带动所述承载组件在所述处理腔与所述转换腔之间移动。其有益效果在于：通过所述第一驱动机构带动所述转换器在所述转换腔内移动。当所述承载组件位于所述转换器时，能够调整该所述承载组件的位置。通过所述第二驱动机构能够带动所述承载组件移动至所述处理腔，对晶圆进行处理。
在一种可行的方案中，所述转换器与所述第一驱动机构为可拆卸连接。其有益效果在于：这样设置便于对所述转换器进行维护或更换。
在一种可行的方案中，所述驱动装置还包括连接机构；所述连接机构设置于所述承载组件或所述转换器，所述连接机构设置第一卡接部，所述承载组件或所述转换器设有与所述第一卡接部适配的第二卡接部，所述连接机构用于连接所述转换器和所述连接件。其有益效果在于：通过设置所述连接机构，并通 过所述第一卡接部和所述第二卡接部能够将所述承载组件和所述转换器连接在一起，在所述第二驱动机构驱动所述承载组件移动时，能够连带所述转换器及所述转换器上的所有所述承载组件进行移动。
在一种可行的方案中，所述驱动装置还包括第三驱动机构；所述第三驱动机构设置于所述转换器一侧，所述第三驱动机构用于带动所述转换器和所述承载组件移动。其有益效果在于：通过设置所述第三驱动机构对所述转换器进行驱动，能够通过驱动所述转换器的同时驱动所述承载组件进行移动，在所述承载组件设置为若干个时，能够驱动各个所述承载组件进行同步移动。
在一种可行的方案中，所述承载组件设置为至少两个。其有益效果在于：能够通过两个所述承载组件对晶圆进行支撑，便于进行不同步的加工。
在一种可行的方案中，所述第二驱动机构设置为至少两个，各个所述第二驱动机构分别用于驱动各个所述承载组件。其有益效果在于：通过将所述第二驱动机构设置为至少两个，且两个所述第二驱动机构分别对应不同的所述承载组件设置，能够带动不同的所述承载组件进行同步的或不同步的运动，提升使用灵活性。
在一种可行的方案中，所述承载组件设有N个支撑部，各个所述支撑部均用于支撑所述晶圆，N为大于1的整数。其有益效果在于：通过在所述承载组件设置N个支撑部，能够在一个所述承载组件同时设置多个晶圆，能够同时对多个晶圆进行处理，提升处理效率。
在一种可行的方案中，所述处理腔设置为若干个，且各个所述处理腔独立工作，所述驱动装置用于驱动所述承载组件在各个所述处理腔和所述转换腔之间移动。其有益效果在于：通过设置若干个独立工作的处理腔，能够对不同的晶圆进行同步的处理，也能够对相同的晶圆进行前后不同步的处理加工。
在一种可行的方案中，所述处理腔设置为两个，且两个所述处理腔为两个所述工艺腔、或者两个所述处理腔为两个所述加热腔、又或者两个所述处理腔 为一个所述工艺腔和一个所述加热腔。其有益效果在于：通过将所述处理腔设置为两个，能够对两组或两个不同的晶圆进行同步的处理，也能够对相同的晶圆进行前后不同时的两步处理加工。
在一种可行的方案中，该晶圆处理设备还包括供给装置；所述供给装置与所述工艺腔连通，所述供给装置用于提供所述工艺腔处理所述晶圆的原料。其有益效果在于：通过设置所述供给装置能够对所述工艺腔需要加工时提供原料，保证设备的正常运行。
在一种可行的方案中，该晶圆处理设备还包括设置于所述承载组件的密封件，所述密封件用于隔断所述转换腔与所述处理腔。其有益效果在于：通过设置所述密封件能够将所述处理腔与所述转换腔隔离开，避免处理腔内进行处理时原料或温度扩散至所述转换腔内，保证处理的正常进行。
在一种可行的方案中，该晶圆处理设备还包括第四驱动机构；所述第四驱动机构设置于所述承载组件一侧，所述第四驱动机构用于带动所述承载组件转动。其有益效果在于：通过设置所述第四驱动机构，带动所述承载组件转动，能够对承载组件上的所述晶圆的角度进行调整，能够保证工艺处理过后的晶圆的质量。
在一种可行的方案中，该晶圆处理设备还包括基体；所述基体设有所述处理腔和所述转换腔，所述驱动装置设置于所述基体，且所述驱动装置与所述基体之间的密封方式为动密封。其有益效果在于：这样设置使得所述驱动装置的部分结构能够设置于所述转换腔的外侧，并使得所述转换腔的空间无需设置较大，能够降低处理时制造工作环境的难度。
在一种可行的方案中，该晶圆处理设备还包括第五驱动机构；所述基体包括第一固定部和第二固定部；所述工艺腔和所述加热腔设置于所述第一固定部，所述第一固定部和所述第二固定部形成了所述转换腔；所述第五驱动机构设置于所述第一固定部和/或所述第二固定部，所述第五驱动机构用于带动所述第一 固定部或所述第二固定部移动。其有益效果在于：通过将所述基体设置为所述第一固定部和所述第二固定部，使得所述转换腔的空间可以开合。通过设置所述第五驱动机构，能够通过第五驱动机构带动所述第一固定部或所述第二固定部移动，便于开合所述转换腔，便于进行清理或维修。
在一种可行的方案中，该晶圆处理设备还包括加热装置；所述加热装置与所述转换腔连通，所述加热装置用于对所述转换腔进行加热。其有益效果在于：通过设置所述加热装置能够对所述转换腔进行加热，能够对位于所述转换腔内的晶圆或装置进行加热，能够保证晶圆的温度或对晶圆进行预热。
本发明还提供一种晶圆处理系统，该晶圆处理系统包括传输设备和任一种可行的方案中所述的晶圆处理设备；所述晶圆处理设备设有传输通道，所述传输设备与所述传输通道连通，所述传输设备用于输送所述晶圆。其有益效果在于：设置所述传输设备便于将晶圆输送至所述晶圆处理设备，同时也便于将所述晶圆处理设备的晶圆取出。
在一种可行的方案中，所述晶圆处理设备设置为至少两个，且各个所述晶圆处理设备分别设置于所述传输设备不同侧，所述传输设备用于输送晶圆至各个所述晶圆处理设备、且所述传输设备用于输送各个所述晶圆处理设备的晶圆。其有益效果在于：这样设置，在一个所述传输设备处设置至少两个所述晶圆处理设备，使得一个所述传输设备与至少两个所述晶圆处理设备配套使用，能够提升所述传输设备的使用率，节省占地空间，降低系统成本。
在一种可行的方案中，该晶圆处理系统还包括前端处理设备；所述前端处理设备设置于所述传输设备一侧，所述前端处理设备设有晶圆流转盒，所述传输设备将所述晶圆输送至所述晶圆流转盒和/或所述晶圆处理设备，所述前端处理设备用于输送所述晶圆流转盒。其有益效果在于：通过设置所述前端处理设备和所述晶圆流转盒，能够将所述传输设备输出的晶圆在所述前端处理设备内运送至所述晶圆流转盒内，降低所述晶圆被污染的可能性。
在一种可行的方案中，该晶圆处理系统还包括晶圆传送盒和传输装置；所述晶圆传送盒设置于所述前端处理设备，所述前端处理设备用于将所述晶圆流转盒输送至所述晶圆传送盒；所述传输装置用于输送所述晶圆传送盒。其有益效果在于：通过设置所述晶圆传送盒和所述传输装置，能够通过所述前端处理模块将所述晶圆流转盒运送至所述晶圆传输盒，并且能够通过所述传输装置将晶圆流转盒进行移送，便于对晶圆进行输入和输出。
本发明还提供一种晶圆处理设备的控制方法，包括：
S1、将晶圆输送至所述转换腔内的所述承载组件上，其中第一抽气装置与所述转换腔连通，所述第一抽气装置用于将所述转换腔内的气体抽出，以对所述转换腔进行第一真空处理；
S2、通过所述驱动装置带动所述承载组件移动至所述处理腔，其中第二抽气装置与所述处理腔连通，所述第二抽气装置用于将所述处理腔内的气体抽出，以对所述处理腔进行第二真空处理；
S3、通过所述处理腔对所述承载组件上的晶圆进行加工处理；
S4、通过所述驱动装置带动所述承载组件将完成处理的晶圆输送至所述转换腔；
S5、将完成处理的晶圆移出所述转换腔。
在一种可行的方案中，所述驱动装置包括第一驱动机构、第二驱动机构和转换器；
所述S2具体包括：
S21、通过所述第一驱动机构带动所述转换器上的所述承载组件移动，调整所述承载组件位于所述转换腔的位置；
S22、通过所述第二驱动机构带动所述承载组件移动至所述处理腔。
在一种可行的方案中，所述处理腔设置于所述转换腔上侧或下侧，所述驱 动装置设置于所述转换腔远离所述处理腔的一侧；
所述S22具体包括：通过所述第二驱动机构带动所述承载组件沿上下方向移动至所述处理腔。
在一种可行的方案中，所述第二驱动机构至少设置为两个，且各个所述第二驱动机构独立工作所述；
S22还包括：通过至少两个所述第二驱动机构分别带动所述承载组件沿上下方向移动至所述处理腔。
在一种可行的方案中，所述处理腔设置为若干个，且各个所述处理腔独立工作，并且若干个所述处理腔至少包括第一加热腔和第一工艺腔；
所述S2和所述S3具体包括：
S31、通过所述驱动装置带动所述承载组件移动至所述第一加热腔，对所述承载组件上的晶圆进行加热；
S32、通过所述驱动装置带动所述承载组件移动至所述第一工艺腔，对所述承载组件上的晶圆进行工艺处理。
在一种可行的方案中，所述加热腔和所述处理腔均设置为两个；
所述S31具体包括：
S311、通过所述驱动装置带动所述承载组件移动至第一加热腔，对所述承载组件上的晶圆进行第一次加热；
S312、通过所述驱动装置带动所述承载组件移动至第二加热腔，对所述承载组件上的晶圆进行第二次加热；
所述S32具体包括：
S321、通过所述驱动装置带动所述承载组件移动至第一工艺腔，对所述承载组件上的晶圆进行第一工艺处理；
S322、通过所述驱动装置带动所述承载组件移动至第二工艺腔，对所述承载组件上的晶圆进行第二工艺处理。
在一种可行的方案中，所述承载组件、所述加热腔和所述处理腔均设置为两个；
所述S31具体包括：通过所述驱动装置带动两个所述承载组件分别移动至两个所述加热腔，对两个所述承载组件上的第一批晶圆、和第二批晶圆至少在第一预定时间内分别在第一加热腔、第二加热腔内进行加热；
所述S32具体包括：通过所述驱动装置带动两个所述承载组件分别移动至两个所述工艺腔，对两个所述承载组件上的第一批晶圆、和第二批晶圆至少在第二预定时间内分别在第一工艺腔、第二工艺腔内进行工艺处理。
在一种可行的方案中，还包括：
S0、提供前端处理设备和传输设备；
所述S1具体包括：通过所述前端处理设备存放待加工晶圆，通过所述传输设备将待加工晶圆移动至所述转换腔的承载组件上。
附图说明
图1为本发明第一种实施例中晶圆处理设备的立体结构示意图；
图2为图1的部分结构示意图；
图3为图1中承载组件的结构示意图；
图4为图1中加热腔的结构示意图；
图5为本发明第二种实施例中第一驱动机构的结构示意图；
图6为本发明第二种实施例中第三驱动机构的结构示意图；
图7为本发明第三种实施例中承载组件的结构示意图；
图8为本发明第四种实施例中第四驱动机构的结构示意图；
图9为本发明第五种实施例中转换腔的结构示意图；
图10为本发明上述实施例中晶圆处理系统的立体结构示意图；
图11为本发明上述实施例中晶圆处理设备的控制方法的流程示意图。
图中标号：
1、基体；
100、处理腔；
101、工艺腔；1011、第一盖体；
102、加热腔；1021、第二盖体；
103、转换腔；
104、第一固定部；
105、第二固定部；
2、承载组件；201、支撑部；202、第一承载组件；
3、第二承载组件；
4、驱动装置；401、第一驱动机构；402、第二驱动机构；403、转换器；404、第三驱动机构；
5、供给装置；
6、第四驱动机构；
7、第五驱动机构；
8、加热装置；
9、第一抽气装置；
10、传输设备；
11、晶圆处理设备；
12、前端处理设备；
13、晶圆传送盒。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合本发明的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。除非另外定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本文中使用的“包括”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。
针对现有技术存在的问题，本发明的实施例提供了一种晶圆处理设备。
图1为本发明第一种实施例中晶圆处理设备的立体结构示意图，图2为图1的部分结构示意图，图3为图1中承载组件的结构示意图，图4为图1中加热腔的结构示意图，图7为本发明第三种实施例中承载组件的结构示意图，图9为本发明第五种实施例中转换腔的结构示意图。
本发明的一些实施例中，该晶圆处理设备11包括驱动装置4、转换腔103、处理腔100、第一抽气装置9、第二抽气装置(图中未示)和承载组件2；所述处理腔100与所述转换腔103连通；其中，所述转换腔103用于提供密封空间，所述第一抽气装置9与所述转换腔103连通，所述第一抽气装置9用于将所述转换腔103内的气体抽出，以对所述转换腔103进行第一真空处理，使得转换腔103具有第一真空条件；其中，所述处理腔100用于处理晶圆，所述第二抽气装置(图中未示)与所述处理腔100连通，所述第二抽气装置(图中未示)用于将所述处理腔100内的气体抽出，以对所述处理腔100进行第二真空处理， 使得处理腔100具有第二真空条件；所述承载组件2设置于所述转换腔103内，所述承载组件2用于承载晶圆，所述驱动装置4用于调整所述承载组件2在所述转换腔103的位置，所述驱动装置4并用于驱动所述承载组件2在所述转换腔103和所述处理腔100之间移动。这里，所述转换腔103工作在一个传片压力下，一般在0.1-0.3托(压强单位)，所述转换腔103具有第一真空条件，以与所述转换腔103的传片压力相匹配；所述处理腔100工作在一个工艺压力下，例如1托(压强单位)，所述处理腔100具有第二真空条件，以与所述处理腔100的工艺压力相匹配，也就是所述转换腔的第一真空条件与所述处理腔的第二真空条件不同。在本发明的其他一些实施例，所述转换腔的第一真空条件与所述处理腔的第二真空条件相同。
在一些实施例中，所述处理腔100设置为若干个，且各个所述处理腔100独立工作，所述驱动装置4用于驱动所述承载组件2在各个所述处理腔100和所述转换腔103之间移动。在一些具体的实施例中，所述处理腔100可以设置为两个、三个、四个或更多数量。本发明的一些实施例中，该晶圆处理设备11包括驱动装置4、转换腔103、处理腔100和承载组件2；所述处理腔100与所述转换腔103连通；其中，所述转换腔103用于提供密封空间，使得所述转换腔103具备第一真空条件；其中，所述处理腔100用于处理晶圆，且所述处理腔100具备第二真空条件；所述承载组件2设置于所述转换腔103内，所述承载组件2用于承载晶圆，所述驱动装置4具有第一驱动组件用于调整所述承载组件2在所述转换腔103的位置，以及具有第二驱动组件用于驱动所述承载组件2在所述转换腔103和所述处理腔100之间移动。这里，所述转换腔103工作在一个传片压力下，一般在0.1-0.3托(压强单位)，所述转换腔103具有第一真空条件，以与所述转换腔103的传片压力相匹配；所述处理腔100工作在一个工艺压力下，例如1托(压强单位)，所述处理腔100具有第二真空条件，以与所述处理腔100的工艺压力相匹配，也就是所述转换腔的第一真空条件与所述处理腔的第二真空条件不同。在本发明的其他一些实施例，所述转换腔的 第一真空条件与所述处理腔的第二真空条件相同。本发明的另一些实施例中，该晶圆处理设备包括驱动装置4、转换腔103、处理腔100和承载组件2；所述处理腔100与所述转换腔103连通；其中，所述转换腔103用于提供密封空间，使得所述转换腔103具备第一真空条件；其中，所述处理腔100用于处理晶圆，且所述处理腔至少包括加热腔102和工艺腔101，所述工艺腔101具备第二真空条件，所述加热腔102具备第三真空条件，；所述承载组件2设置于所述转换腔103内，所述承载组件2用于承载晶圆，所述驱动装置具有第一驱动组件用于调整所述承载组件2在所述转换腔103的位置，以及具有第二驱动组件用于驱动所述承载组件2在所述转换腔103和所述处理腔100之间移动。这里，所述转换腔103可以通过第一抽气装置9获取第一真空条件，所述工艺腔101可以通过第二抽气装置获取第二真空条件，所述加热腔102可以通过第三抽气装置获取第三真空条件。具体地，所述转换腔103工作在一个传片压力下，一般在0.1-0.3托(压强单位)，所述转换腔103具有第一真空条件，以与所述转换腔103的传片压力相匹配；所述工艺腔101工作在一个工艺压力下，例如1托(压强单位)，所述工艺腔101具有第二真空条件，以与所述工艺腔101的工艺压力相匹配；所述加热腔102工作在一个加热压力下，例如0.1-0.3托(压强单位)，所述加热腔102具有第三真空条件，以与所述加热腔102的加热压力相匹配，也就是，所述转换腔103的第一真空条件与所述工艺腔101的第二真空条件不同，所述转换腔103的第一真空条件与加热腔102的第三真空条件相同。在本发明的其他一些实施例，所述转换腔103的第一真空条件、所述工艺腔101的第二真空条件、以及所述加热腔102的第三真空条件可以都相同，也可以各不相同。
在另外一些实施例中，所述处理腔100包括第一加热腔102和第一工艺腔101，所述第一加热腔102用于对晶圆进行加热，所述第一工艺腔101用于对晶圆进行工艺处理。在另外一些具体的实施例中，所述处理腔100设置为一个，且该所述处理腔100为加热腔102或工艺腔101。在又一些实施例中，所述处理 腔100设置为两个，且两个所述处理腔100为两个所述工艺腔101、或者两个所述处理腔100为两个所述加热腔102、又或者两个所述处理腔100为一个所述工艺腔101和一个所述加热腔102。
值得说明的是，当一个晶圆处理设备11的所述处理腔100均设置为加热腔102或工艺腔101时，可以在与该晶圆处理设备11配合使用的晶圆处理设备11的处理腔100设置与前者不同的处理腔100。例如，第一个晶圆处理设备11的处理腔100为加热腔102，第二晶圆处理设备11的处理腔100为工艺腔101。
在本发明一些较佳实施例中，所述工艺腔101和/或所述加热腔102设置为至少两个，也就是说，所述处理腔至少包括第一加热腔102、第二加热腔(图中未标示)，以及第一工艺腔101和第二工艺腔(图中未标示)，其中所述第一加热腔102、第二加热腔(图中未标示)用于分别对第一批晶圆和第二批晶圆进行加热处理，所述第一工艺腔101、第二工艺腔(图中未标示)用于分别对第一批晶圆和第二批晶圆进行工艺加工。在之外一些具体实施例中，所述工艺腔101设置为两个、三个或更多个。在还有的一些实施例中，所述加热腔102设置为两个、三个或更多个。
本发明的一些实施例中，所述基体1设有所述处理腔100和所述转换腔103，所述驱动装置4设置于所述基体1。在一些实施例中，当该晶圆处理设备11同时设有所述工艺腔101和所述加热腔102时，所述基体1设有所述工艺腔101、所述加热腔102和所述转换腔103。
本发明的一些实施例中，所述处理腔100设置于所述转换腔103上侧或下侧，所述驱动装置4设置于所述转换腔103远离所述处理腔100的一侧。本发明的一些具体实施例中，所述处理腔100设置于所述转换腔103的上侧，所述驱动装置4设置于所述转换腔103的下侧。
本发明的一些实施例中，为了能够在对一个或一组晶圆进行加热的同时能够对另一个或一组晶圆进行工艺处理，或者为了能够在对一个或一组晶圆进行 工艺处理的同时能够另一个或一组晶圆进行加热，将所述承载组件2设置为两个。两个所述承载组件2包括第一承载组件202和第二承载组件3。
在另外一些实施例中，所述承载组件2的数量也可以设置为一个。即可以通过不同的处理腔100对该承载组件2承载的晶圆进行不同步加工，具体的进行加热之后再进行工艺处理，或者进行工艺处理之后再进行加热。
值得说明的是，当所述加热腔102或所述工艺腔101均设置为两个、三个或更多个，且所述承载组件2设置为至少两个时，可以通过不同的承载组件2对不同的晶圆进行同步加工，也可以通过不同的或相同的承载组件2对晶圆进行局部加工或加热。
在其他一些实施例中，所述承载组件2的数量也可以设置为大于所述工艺腔101和所述加热腔102的数量之和。在一些实施例中，所述承载组件2的数量还可以设置为三个。例如，一个承载组件2进行加热的同时，另一个承载组件2进行工艺加工，最后一个承载组件2对接外部设备进行晶圆的输送。
值得说明的是，在实际使用时，可以将一个所述工艺腔101和一个所述加热腔102形成一组处理腔100组，在一个所述晶圆处理设备11上可以设置一组或多组所述处理腔100组，能够同时对一组或多组的晶圆进行同时间和/或同步骤的加工处理。
本发明的又一些具体实施例中，当该晶圆处理设备11同时设有所述工艺腔101和所述加热腔102时，所述转换腔103、所述工艺腔101和所述加热腔102设置于所述基体1内，且所述工艺腔101和所述加热腔102位于所述转换腔103的上侧。在另一些实施例中，所述工艺腔101和所述加热腔102也可以位于所述转换腔103的下侧。在又一些实施例中，所述工艺腔101和所述加热腔102还可以位于所述转换腔103的左侧或右侧。在还一些实施例中，所述加热腔102和所述工艺腔101又可以位于所述转换腔103的不同侧面。
在一些实施例中，所述工艺腔101设有喷头、喷淋面板或其他结构，所述 喷头与所述供给装置5连接，这样使得能够对工艺腔101内的晶圆进行镀膜、沉积、蚀刻或其他工艺加工。
在一些实施例中，所述工艺腔101的外壳设置为矩形。在另一些实施例中，所述工艺腔101的外形也可以设置为方形、圆形、多边形或其他形状。在还一些实施例中，所述工艺腔101的外形还可以设置为规则形状或不规则形状。
在另一些实施例中，所述工艺腔101由第一盖体1011与所述基体1形成，所述第一盖体1011可拆卸的设置于所述基体1上。这样设置使得便于安装，便于对工艺腔101内的结构进行维修、清洗或更换。
在其他一些实施例中，所述加热腔102由第二盖体1021和所述基体1形成，所述第二盖体1021可拆卸的设置于所述基体1上。
在一些实施例中，所述供给装置5通常设置为器柜，所述供给装置5能够提供工艺原料。在另一些实施例中，所述供给装置5可以实现各种配料之间按固定比例的配比工作。
在一些实施例中，所述加热腔102内设有加热组件，所述加热组件能够对加热腔102内的空间进行加热工作。在另一些实施例中，所述加热组件也可以设置于所述加热腔102外侧。
在一些实施例中，所述加热腔102的外壳设置为圆形。在另一些实施例中，所述加热腔102的外形也可以设置为方形、圆形、多边形或其他形状。在还一些实施例中，所述加热腔102的外形还可以设置为规则形状或不规则形状。
在一些实施例中，所述转换腔103与所述工艺腔101和所述加热腔102连通。此处所述连通包括至少以下两种连通状态，以两个承载组件2为例：(1)当所述第一承载组件202和所述第二承载组件3分别位于所述加热腔102和所述工艺腔101内时，所述加热腔102和所述工艺腔101均与所述转换腔103连通；(2)当所述第一承载组件202和所述第二承载组件3均位于所述转换腔103时，所述加热腔102和所述工艺腔101均与所述转换腔103连通。在另一些实 施例中，所述转换腔103与所述工艺腔101和所述加热腔102连通也可以包括：所述工艺腔101或所述加热腔102中的一个与所述转换腔103连通。具体的说，所述转换腔103与所述工艺腔101和所述加热腔102连通，即所述驱动装置4能够直接带动所述第一承载组件202和/或所述第二承载组件3在所述加热腔102和所述转换腔103之间移动，所述驱动装置4能够直接带动所述第一承载组件202和/或所述第二承载组件3在所述工艺腔101和所述转换腔103之间移动，又或者所述驱动装置4能够经所述加热腔102将所述第一承载组件202和/或所述第二承载组件3输送至所述工艺腔101，再或者所述驱动装置4能够经所述工艺腔101将所述第一承载组件202和/或所述第二承载组件3输送至所述加热腔102。
在一些实施例中，所述第一支撑件和所述第二支撑件可以设置为盘状、板状、杆状或其他形状。所述第一支撑件和所述第二支撑件均活动设置于所述转换腔103内，所述驱动装置4设置于所述基体1。使用时通过所述驱动装置4带动所述第一承载组件202和所述第二承载组件3在所述工艺腔101、所述加热腔102和所述转换腔103之间进行移动。此处所述之间进行移动包括：带动所述承载组件2在所述工艺腔101与所述转换腔103之间移动、带动所述承载组件2在所述加热腔102与所述转换腔103之间移动、带动所述承载组件2在所述工艺腔101与所述加热腔102之间移动、带动所述承载组件2在一个所述工艺腔101与另一个所述工艺腔101之间移动、带动所述承载组件2在一个所述加热腔102与另一个所述加热腔102之间移动。
值得说明的是，当所述承载组件2直接在所述工艺腔101与所述加热腔102、在一个所述工艺腔101与另一个所述工艺腔101或在一个所述加热腔102与另一个所述加热腔102之间移动时，可以在所述工艺腔101与所述加热腔102之间、所述工艺腔101与所述工艺腔101之间或所述加热腔102与所述加热腔102之间设置开关装置，控制相邻两个腔室之间的通断。
图5为本发明第二种实施例中第一驱动机构的结构示意图。
本发明的一些实施例中，所述驱动装置4包括第一驱动机构401、第二驱动机构402和转换器403；所述转换器403设置于所述转换腔103，所述第一驱动机构401与所述转换器403连接，所述第一驱动机构401用于带动所述转换器403移动或转动；所述承载组件2设置于所述转换器403，所述第二驱动机构402设置于所述转换器403一侧，所述第二驱动机构402用于带动所述承载组件2在所述处理腔100与所述转换腔103之间移动。
具体的说，当所述处理腔100为所述工艺腔101和/或所述加热腔102时，所述第二驱动机构402用于带动所述承载组件2在所述工艺腔101与所述转换腔103之间移动，和/或所述第二驱动机构402用于带动所述承载组件2在所述加热腔102与所述转换腔103之间移动。
本发明的一些具体实施例中，所述转换器403设置为支撑板，所述转换器403上设有镂空处，所述承载组件2设置于所述镂空处。所述第一驱动装置4为转动电机，所述转动电机的转动轴与所述转换器403连接，使得所述转换器403能够随着所述转动电机的转动而转动，进而带动所述承载组件2水平转动，即水平面内对承载组件2的位置进行调整。
通过调整能够使得所述承载组件2从位于所述工艺腔101下侧的位置，移动至位于所述加热腔102下侧的位置。也能够通过调整使得所述承载组件2从位于所述加热腔102下侧的位置，移动至位于所述工艺腔101下侧的位置。
所述第二驱动装置4为电缸、气缸、蜗轮蜗杆或其他结构。所述第二驱动机构402竖直设置，使用时通过所述第二驱动装置4能够带动所述第一承载组件202和/或所述第二承载组件3上下移动，即调整所述承载组件2的高低位置，进而实现所述第一承载组件202和所述第二承载组件3在所述工艺腔101、所述加热腔102和所述转换腔103之间进行移动。
在一些实施例中，所述第二驱动机构402的固定部分设置于所述转换腔103下侧，所述第二驱动机构402的活动部分设置于所述转换腔103内。这样设置 能够降低所述转换腔103的空间大小，避免所述转换腔103的空间设置太大，提升制造难度、或提升制造转换腔103需求环境的难度。
在另外一些实施例中，所述第一驱动机构401和/或所述第二驱动机构402也可以设置于所述转换腔103的前侧、后侧、左侧、右侧或其他方位。
在一些具体的实施例中，所述镂空部的内径小于所述承载组件2的外径，这样能够随着所述第二驱动机构402的活动部的下降使得所述承载组件2下降至所述转换器403上，并受到所述转换器403的制成，使得所述第二驱动机构402的活动部能够与所述承载组件2脱离，反之同理。
图6为本发明第二种实施例中第三驱动机构的结构示意图。
本发明的一些实施例中，所述转换器403与所述第一驱动机构401为可拆卸连接。所述驱动装置4还包括第三驱动机构404；所述第三驱动机构404设置于所述转换器403一侧，所述第三驱动机构404用于带动所述转换器403和所述承载组件2移动。
本发明的一些具体实施例中，通过所述转换器403下侧设有不规则凸起，所述第一驱动机构401的活动端设有与所述不规则凸起适配的凹槽，所述转接器和所述第一驱动机构401通过所述凸起和所述凹槽连接，所述第三驱动机构404设置于所述转换器403下侧。使用时所述第三驱动机构404向上顶升所述转换器403使得所述转换器403与所述第一驱动机构401分离，即通过所述第三驱动机构404代替所述第二驱动机构402使得所述承载组件2在所述转换腔103与所述处理腔100之间移动。
在另外一些实施例中，所述驱动装置4还包括连接机构(图中未示)；所述连接机构设置于所述承载组件2或所述转换器403，所述连接机构(图中未示)设置第一卡接部，所述承载组件2或所述转换器403设有与所述第一卡接部适配的第二卡接部，所述连接机构用于连接所述转换器403和所述连接件。使用时，通过所述连接机构求佛那个所述第一卡接部卡接至所述第二卡接部，使得 所述承载组件2和所述转换器403形成一体，使得所述第二驱动机构402驱动所述承载组件2移动时所述转换器403可以达到联动的效果，进而使得所述转换器403上的所有承载组件2同步上下移动。
本发明的一些实施例中，所述驱动装置4与所述基体1之间的密封方式为动密封。本发明的一些具体实施例中，所述动密封的形式可以为磁流体密封。这样使得所述第二驱动机构402的非活动部分整体设置于所述转换腔103外侧，能够降低所述第二驱动机构402的固定部分与活动部分之间的杂质进入所述转换腔103内。
在另一些实施例中，所述转换器403也可以设置为皮带或履带输送机构的形式，所述承载组件2设置于所述皮带或履带输送机构上。所述第一驱动机构401设置为机械手、夹取机构或其他机构，所述第一驱动机构401将所述第一承载组件202和/或所述第二承载组件3移动至所述第二驱动机构402上。所述第二驱动机构402带动所述承载组件2移动至所述工艺腔101或所述加热腔102内。
本发明的一些实施例中，所述工艺腔101设置为至少两个，所述承载组件2至少为两个。在另外一些实施例中，所述第一承载组件202和/或所述第二承载组件3至少为两个。所述第二驱动机构402至少设置为两个，且各个所述第二驱动机构402独立工作。
本发明的一些具体实施例中，所述工艺腔101设置为两个，所述加热腔102设置为一个，所述第一承载组件202和所述第二承载组件3均设置为两个。所述第二驱动机构402设置为四个，且四个所述第二驱动机构402独立工作。
值得说明的是，当加热条件相同时，若干个所述承载组件2可以在同一个加热腔102内进行加热，因此所述加热腔102的数量在所述承载组件2设置为多个时仍可以设置为一个。
此外，当所述承载组件2设置为一个，且所述第二驱动机构402设置为两 个时，两个所述第二驱动机构402均用于驱动所述承载组件2移动。例如，第一个所述第二驱动机构402驱动所述承载组件2移动至所述加热腔102，第二个所述第二驱动机构402驱动所述承载组件2移动至所述工艺腔101。
在另一些实施例中，所述工艺腔101可以设置为一个、三个、四个或其他数量。
在另一些实施例中，所述加热腔102可以设置为两个、三个或其他数量。
在另一些实施例中，所述第一承载组件202和所述第二承载组件3均可以设置为一个、三个、四个或其他数量。
在另一些实施例中，所述第二驱动机构402可以设置为一个、两个、三个、四个或其他数量。值得一说的是，在实际设置时同一个所述第二驱动机构402可以设置为同时控制两个、三个或更多个位置的承载组件2的升降。例如，承载组件2设置为五个，所述第二驱动机构402设置为两个，一个所述第二驱动机构402控制两个所述承载组件2的升降，另一个所述第二驱动机构402控制三个所述承载组件2的升降。
在其他一些实施例中，两个所述第二驱动机构402可以控制同一个所述承载将的升降。
本发明的一些实施例中，所述承载组件2均设有N个支撑部201，所述支撑部201均用于支撑所述晶圆，N为大于的整数。
本发明的一些具体实施例中，所述承载组件2设有二十五个支撑部201，这样使得一个承载组件2能够同时设置二十五个晶圆。
在另一些实施例中，所述支撑部201也可以设置为其他任意数量。
本发明的一些实施例中，还包括设置于所述承载组件2的密封件(图中未示)，所述密封件用于隔断所述转换腔103与所述工艺腔101和/或所述加热腔102。
本发明的一些具体实施例中，所述密封件(图中未示)设置于所述第一承载组件202和所述第二承载组件3上，当所述第一支撑件或所述第二支撑件运动至所述工艺腔101或所述加热腔102内时，所述密封件的侧面与所述工艺腔101或所述加热腔102的侧壁抵接。此时，所述密封件与所述第一承载组件202或所述第二承载组件3使得所述工艺腔101/和或所述加热腔102与所述转换腔103隔离开。使得加热时仅对加热腔102进行加热，工艺处理时只对工艺腔101内的晶圆进行工艺加工。
在另一些实施例中，所述工艺腔101和/或所述加热腔102与所述转换腔103的连接处可以设置活动板、门阀或其他结构件，并通过设置移动机构带动所述活动板、所述门阀或所述其他结构件移动。使得所述第一承载组件202和/或所述第二承载组件3位于所述转换腔103时，仍可以通过所述活动板、所述门阀或所述其他结构件隔断所述工艺腔101和/或所述加热腔102与所述转换腔103之间的连通。
图8为本发明第四种实施例中第四驱动机构的结构示意图。
本发明的一些实施例中，还包括第四驱动机构6；所述第四驱动机构6设置于所述承载组件2一侧，所述第四驱动机构6用于带动所述承载组件2转动。在一些实施例中，所述第四驱动机构6设置于所述承载组件2一侧，所述第四驱动机构6用于带动所述承载组件2转动。
本发明的一些具体实施例中，所述第三驱动机构404设置于所述转换腔103内。所述第三驱动机构404为齿轮齿条机构，所述第三驱动机构404的齿轮设置于所述第一承载组件202或所述第二承载组件3，所述第三驱动机构404的齿条设置于所述转换腔103内，所述第三驱动机构404的驱动与所述齿条连接。使用时所述驱动带动所述齿条移动，并通过所述齿轮带动所述第一承载组件202和/或所述第二承载组件3转动一定的角度。
在一些实施例中，所述第四驱动机构6可以设置为一个或多个，当所述第 四驱动机构6设置为一个时，所述第四驱动机构6对应的晶圆加工位置附带有转动功能或调整角度的功能。在另外一些实施例中，所述第四驱动机构6可以设置为多个，且各个所述第四驱动机构6与各个所述承载组件2一一对应设置。
值得说明的是，为了避免所述第三驱动机构404和所述第二驱动机构402之间发生相互妨碍，可以将所述第三驱动机构404与所述转换器403设置为不同的高度。在又一些实施例中，所述第三驱动机构404也可以设置于所述转换器403上。
在另一些实施例中，所述第三驱动机构404也可以设置为双齿轮的形式。
在还一些实施例中，所述第三驱动机构404也可以设置于所述第二驱动机构402的活动端内，此时将所述第三驱动机构404设置为转动气缸、转动电机或其他驱动均可以。值得一说的是，当所述第三驱动机构404设置于所述第二驱动机构402时，所述第三驱动机构404会随着所述第二驱动机构402的活动端移动而移动。
本发明的一些实施例中，还包括第五驱动机构7；所述基体1包括第一固定部104和第二固定部105；所述工艺腔101和所述加热腔102设置于所述第一固定部104，所述第一固定部104和所述第二固定部105形成了所述转换腔103；所述第五驱动机构7设置于所述第一固定部104和/或所述第二固定部105，所述第五驱动机构7用于带动所述第一固定部104或所述第二固定部105移动。
本发明的一些具体实施例中，所述第一固定部104设置于所述第二固定部105上侧，所述工艺腔101和所述加热腔102设置于所述第一固定部104上侧。所述第一固定部104和所述第二固定部105围绕成所述转换腔103。所述第五驱动机构7为气缸、电缸或其他机构。所述第五驱动机构7的一端固定在所述第二固定部105上。使用时通过开启所述第五驱动机构7，使得所述第五驱动机构7的活动端移动至与所述第一固定部104贴合，随着所述第五驱动机构7的继续开启，所述第五驱动机构7将所述第一固定部104向上顶起，进而使得所述转 换腔103开启。此时便可以对所述转换腔103内的结构进行清洗、维修或更换。当需要控制所述转换腔103关闭时，控制所述第五驱动机构7反向移动，所述第一固定部104在重力的作用下自动下降至与所述第二固定部105贴合。
在另一些实施例中，所述第五驱动机构7的顶端可以与所述第一固定部104固定设置，这样随着所述第五驱动机构7的收缩，第一固定部104与第二固定部105即会达到贴合的状态。
在还一些实施例中，所述第一固定部104和所述第二固定部105的位置关系可以为前后方向、左右方向。在再一些实施例中，所述第一固定部104和所述第二固定部105的位置关系还可以为倾斜方向。
在其他一些实施例中，所述第一固定部104和所述第二固定部105之间可以设置密封件进行密封，提升气密性。
在又一些实施例中，所述第五驱动机构7可以设置为多个。
本发明的一些实施例中，还包括加热装置8；所述加热装置8与所述转换腔103连通，所述加热装置8用于对所述转换腔103进行加热。
本发明的一些具体实施例中，所述加热装置8设置于所述转换腔103内，所述加热装置8产生热量，能够对所述转换腔103进行加热。
在一些实施例中，所述加热装置8可以为加热板、加热丝、加热片的形式设置于所述转换腔103内。在另外一些实施例中，所述加热装置8也可以设置为发热管、发热棒的形式。在其他一些实施例中，所述加热装置8还可以设置为发射光线的装置，该光线照射至所述晶圆上产生热量。例如，所述光线为红外光线。
本发明的一些实施例中，还包括第一抽气装置9；所述第一抽气装置9与所述转换腔103连通，所述第一抽气装置9用于将所述转换腔103内的气体抽出。
本发明的一些具体实施例中，所述转换腔103设有接管口，所述第一抽气 装置9通过所述接管口与所述转换腔103连通。由于使用时需要保证所述转换腔103内为真空状态，设置所述第一抽气装置9便于抽出所述转换腔103内的气体，实现所述转换腔103的真空状态。
本发明的一些实施例中，还包括第二抽气装置(图中未示)；所述第二抽气装置与所述处理腔100连通，所述第二抽气装置用于将所述处理腔100内的气体抽出。
本发明的一些具体实施例中，所述处理腔100设有气孔，所述第二抽气装置(图中未示)通过所述气孔与所述处理腔100连通。
图10为本发明实施例中晶圆处理系统的立体结构示意图。
本发明的一些实施例中，包括传输设备10和上述任一种实施例中所述的晶圆处理设备11；所述晶圆处理设备11设有传输通道，所述传输设备10与所述传输通道连通，所述传输设备10用于输送所述晶圆。
本发明的一些具体实施例中，所述传输设备10与所述晶圆处理设备11之间设有传输通道，所述传输设备10设有机械手和驱动部，通过所述驱动部能够带动所述机械手移动。使用时，所述传输设备10能够将外部的晶圆传输至所述晶圆处理设备11。或者，所述传输设备10能够将所述晶圆处理设备11的晶圆传输至外部。
本发明的一些实施例中，所述晶圆处理设备11设置为至少两个，且各个所述晶圆处理设备11分别设置于所述传输设备10不同侧，所述传输设备10用于输送晶圆至各个所述晶圆处理设备11、且所述传输设备10用于输送各个所述晶圆处理设备11的晶圆。
本发明的一些具体实施例中，所述晶圆处理设备11设置为三个，所述三个晶圆处理设备11环绕设置于所述传输设备10周侧，所述传输设备10与三个所述晶圆处理设备11之间均设有传输通道。所述传输设备10能够对三个所述晶圆处理设备11取送晶圆。
在另一些实施例中，一个所述传输设备10周侧的所述晶圆处理设备11也可以设置为两个、四个、五个或其他数量。
本发明的一些实施例中，还包括前端处理设备12；所述前端处理设备12设置于所述传输设备10一侧，所述前端处理设备12设有晶圆流转盒(图中未示)，所述传输设备10将所述晶圆输送至所述晶圆流转盒和/或所述晶圆处理设备11，所述前端处理设备12用于输送所述晶圆流转盒。
本发明的一些具体实施例中，通过设置所述前端处理设备12，并将所述前端处理设备12设置于所述传输设备10的一侧，使得所述传输设备10可以对所述前端处理设备12进行晶圆的取放。
由于使用要求，使得晶圆需要在无尘或真空环境中进行移动。在所述前端处理设备12内设置所述晶圆流转盒(图中未示)，使得所述晶圆在移送时可以通过所述晶圆流转盒进行输送。具体的，可以在所述前端处理设备12内设置真空或无尘环境。将所述晶圆处理设备11的晶圆在所述前端处理设备12内放置至所述晶圆流转盒内、或者将外部的晶圆通过所述晶圆流转盒运送至所述前端处理设备12内，之后再输送至所述传输设备10或所述晶圆处理设备11，能够避免晶圆与外界接触。
在另一实施例中，可以在所述前端处理设备12内设置夹取机构、抓取机构或其他移送机构，并通过上述机构完成晶圆在所述晶圆流转盒和所述传输设备10之间的移动。
本发明的一些实施例中，还包括晶圆传送盒13和传输装置(图中未示)；所述晶圆传送盒13设置于所述前端处理设备12，所述前端处理设备12用于将所述晶圆流转盒输送至所述晶圆传送盒13；所述传输装置用于输送所述晶圆传送盒13。
本发明的一些具体实施例中，所述晶圆传送盒13可移动设置于所述前端处理设备12。使用时将所述晶圆流转盒运送至所述晶圆传送盒13内，再通过所述 传输装置(图中未示)对所述晶圆传送盒13进行移送。或者，通过所述传输装置将所述晶圆传送盒13内的所述晶圆流转盒移送至所述前端处理设备12。这样设置通过所述晶圆传送盒13对所述晶圆流转盒进行移送，进一步降低所述晶圆被污染的可能性。同时配置所述传输装置，便于所述晶圆传送盒13的输送。
在另一些实施例中，可以在所述晶圆传送盒13上设置开合结构。当所述晶圆传送盒13被移送至所述前端处理设备12或其他设备上时，控制所述开合结构打开，使得其内的所述晶圆流转盒能够被取出。
在还一些实施例中，也可以在所述前端处理设备12上设置于所述开合结构相同的结构，给所述晶圆流转盒的输入、输出进行限制，同时能够提升所述前端处理设备12的密封效果。
在本发明的第一实施例中提供一种适用于上述晶圆处理设备的控制方法，请参考图3，如下：
步骤1、通过机器臂(未图示)将第一批晶圆、和第二批晶圆同时输送至所述转换腔103内的第一位置和第二位置上，其中所述转换腔103内的第一位置和第二位置对应所述若干处理腔中的第一加热腔102和第二加热腔(图中未标示)；
步骤2、通过驱动装置4驱动与所述机器臂(未图示)藕接的第一运载件(未图示)将所述转换腔103内第一位置上的第一批晶圆和第二位置上的第二批晶圆对应向上移动至所述若干处理腔中的第一加热腔102和第二加热腔(图中未标示)进行加热处理；
步骤3、通过驱动装置4驱动与所述第一运载件(未图示)藕接的旋转支架(图中未标示)将所述已加热处理的第一批晶圆和第二批晶圆移动至所述转换腔103内的第三位置和第四位置上，其中所述转换腔103内的第三位置和第四位置对应所述若干处理腔中的第一工艺腔101和第二工艺腔(图中未标示)；
步骤4、通过所述驱动装置4驱动与所述旋转支架(图中未标示)藕接的第 二运载件(未图示)将所述转换腔103内的第三位置上的第一批晶圆和第四位置上的第二批晶圆对应向上移动至所述若干处理腔中的第一工艺腔101和第二工艺腔(图中未标示)进行工艺处理。
在本发明上述第一实施例中，所述第一运载件、旋转支架、第二运载件为承载组件中的器件，且所述第一运载件、旋转支架、第二运载件设置在转换腔103内。其中，第一运载件和第二运载件为组件形式。
在本发明上述第一实施例中，所述驱动装置包括一个或多个驱动机构，以实现如下功能：驱动第一运载件(未图示)将所述转换腔103内第一位置上的第一批晶圆和第二位置上的第二批晶圆移动至所述若干处理腔中的第一加热腔102和第二加热腔(图中未标示)进行加热处理；驱动旋转支架(图中未标示)将所述已加热处理的第一批晶圆和第二批晶圆移动至所述转换腔103内的第三位置和第四位置上；以及驱动第二运载件(未图示)将所述转换腔103内的第三位置上的第一批晶圆和第四位置上的第二批晶圆移动至所述若干处理腔中的第一工艺腔101和第二工艺腔(图中未标示)进行工艺处理。具体而言，参见图1和图2，一种半导体装置，包括反应腔单元，反应腔单元中设置有下沉空间，下沉空间内设有旋转支架，并在旋转支架上设有4个工作站，也可以多个工作站，下沉空间还设有上盖板。
每个工作站用于放置晶圆舟，例如可以承载第一批晶圆，例如50片晶圆，上盖板上方设置有预热腔A和预热腔B，工艺腔A和工艺腔B。
通过机器臂同时将第一批晶圆和第二批晶圆传送至下沉空间内，随后驱动装置中的升降机构将晶圆舟送至预热腔A和预热腔B内进行预热，至少在第一预定时间内进行预热，例如大约30mi n；完成预热后，通过驱动装置中的升降机构将晶圆舟降至下沉空间内，并由旋转支架旋转一定角度，例如180°，然后送至工艺腔A和工艺腔B内进行工艺，至少在第二预定时间内进行工艺，例如大约1h；在进行工艺的同时，机器臂继续向空置的晶圆舟内传送晶圆，然后进入预热腔A和预热腔B内进行预热。在完成预热和工艺后，晶圆舟降至下沉空间 内，旋转支架旋转一定角度，例如180°，完成工艺的晶圆由机器臂传输出去，经过预热的晶圆舟进入工艺腔进行工艺。继而再循环上述步骤。
在其他应用场景，预热腔和工艺腔的位置可调换，预热腔可作为后处理腔使用，可以根据工艺要求，设定满足预处理和后处理不同的工艺过程。
在本发明的第二实施例中提供一种适用于上述晶圆处理设备的控制方法，如下：
步骤1、通过承载组件(例如机械手)将第一批晶圆、和第二批晶圆同时输送至所述转换腔103内的第一位置和第二位置上，其中所述转换腔103内的第一位置和第二位置对应所述若干处理腔中的第一加热腔102和第二加热腔(图中未标示)；
步骤2、通过驱动装置4驱动承载组件(例如机械手)将所述转换腔103内第一位置上的第一批晶圆和第二位置上的第二批晶圆对应向上移动至所述若干处理腔中的第一加热腔和第二加热腔进行加热处理；
步骤3、通过驱动装置驱动承载组件(例如旋转支架)将所述已加热处理的第一批晶圆和第二批晶圆移动至所述转换腔103内的第三位置和第四位置上，其中所述转换腔103内的第三位置和第四位置对应所述若干处理腔中的第一工艺腔101和第二工艺腔(图中未标示)；
步骤4、通过所述驱动装置4驱动承载组件(例如机械手)将所述转换腔103内的第三位置上的第一批晶圆和第四位置上的第二批晶圆对应向上移动至所述若干处理腔中的第一工艺腔101和第二工艺腔(图中未标示)进行工艺处理。
在本发明上述第二实施例中，所述承载组件包括一个或多个机械手、和一个或多个旋转支架。所述驱动装置4包括一个或多个驱动机构，以实现上述功能即可，在此并非有所限制。
在本发明的第三个实施例中提供一种适用于上述晶圆处理设备的控制方法，如下：
步骤1、通过承载组件(例如机械手)将第一批晶圆、和第二批晶圆同时输送至所述转换腔103内的第一位置和第二位置上，其中所述转换腔103内的第一位置和第二位置对应所述若干处理腔中的第一工艺腔101和第二工艺腔(图中未标示)；
步骤2、通过驱动装置4驱动承载组件(例如机械手)将所述转换腔103内第一位置上的第一批晶圆和第二位置上的第二批晶圆对应向上移动至所述若干处理腔中的第一工艺腔101和第二工艺腔(图中未标示)进行工艺处理；
步骤3、通过驱动装置转动承载组件(例如旋转支架)将所述已工艺处理的第一批晶圆和第二批晶圆移动至所述转换腔103内的第三位置和第四位置上，其中所述转换腔103内的第三位置和第四位置对应所述若干处理腔中的第一加热腔102和第二加热腔(图中未标示)；
步骤4、通过所述驱动装置4驱动承载组件(例如机械手)将所述转换腔103内的第三位置上的第一批晶圆和第四位置上的第二批晶圆对应向上移动至所述若干处理腔中的第一加热腔102和第二加热腔(图中未标示)进行加热处理。
在本发明上述第三实施例中，所述承载组件包括一个或多个机械手、和一个或多个旋转支架。所述驱动装置4包括一个或多个驱动机构，以实现上述功能即可，在此并非有所限制。
本发明上述第二实施例为预加热处理后进行工艺加工，而本发明上述第三实施例为先进行工艺加工后进行加热处理，其根据不同晶圆处理工艺来确定。
图11为本发明上述实施例中晶圆处理设备的控制方法的流程示意图。
本发明实施例还提供了一种晶圆处理设备的控制方法，该控制方法用于控制上述任一种实施例中所述的晶圆处理设备，包括：
S1、将晶圆输送至所述转换腔103内的所述承载组件2上，其中第一抽气装置与所述转换腔连通，所述第一抽气装置用于将所述转换腔内的气体抽出，以对所述转换腔进行第一真空处理；
S2、通过所述驱动装置4带动所述承载组件2移动至所述处理腔100，其中第二抽气装置与所述处理腔连通，所述第二抽气装置用于将所述处理腔内的气体抽出，以对所述处理腔进行第二真空处理；
S3、通过所述处理腔100对所述承载组件2上的晶圆进行加工处理；
S4、通过所述驱动装置4带动所述承载组件2将完成处理的晶圆输送至所述转换腔103；
S5、将完成处理的晶圆移出所述转换腔103。
本发明的一些具体实施例中，通常情况向，晶圆处理设备11与前端处理设备12和传输设备10配和使用。需要加工晶圆时，通过前端处理设备12中转加工后的或未加工的晶圆，通过传输设备10将未加工的晶圆输送至晶圆处理设备11的承载组件2上，之后通过驱动装置4带动所述承载组件2向上运动至处理腔100内，对承载组件2上晶圆进行加工处理，再处理完成后通过所述驱动装置4控制所述承载组件2下降至转换腔103的空间内，之后通过所述传输设备10将加工后的晶圆输送至前端处理设备12，完成加工。
本发明的一些实施例中，所述驱动装置4包括第一驱动机构401、第二驱动机构402和转换器403；所述S2具体包括：
S21、通过所述第一驱动机构401带动所述转换器403上的所述承载组件2移动，调整所述承载组件2位于所述转换腔103的位置；
S22、通过所述第二驱动机构402带动所述承载组件2移动至所述处理腔100。
本发明的一些具体实施例中，通过所述第二驱动机构402带动所述转换器403水平转动，进而调整所述转换器403上的所述承载组件2的所在位置，能够使得同一承载组件2对应不同的处理腔100，并通过第二驱动机构402的作用，能够将该承载组件2输送至不同的处理腔100内进行加工。
本发明的一些实施例中，所述处理腔100设置于所述转换腔103上侧或下 侧，所述驱动装置4设置于所述转换腔103远离所述处理腔100的一侧；
所述S22具体包括：通过所述第二驱动机构402带动所述承载组件2沿上下方向移动至所述处理腔100。
本发明的一些具体实施例中，所述处理腔100设置于所述转换腔103上侧，所述驱动装置4设置于所述转换腔103下侧，使用时通过所述第二驱动机构402带动所述承载组件2上下移动，实现所述承载组件2在所述转换腔103和所述处理腔100之间的移动。
本发明的一些实施例中，所述第二驱动机构402至少设置为两个，且各个所述第二驱动机构402独立工作所述；
S22还包括：通过至少两个所述第二驱动机构402分别带动所述承载组件2沿上下方向移动至所述处理腔100。
本发明的一些具体实施例中，当所述承载组件2位于不同的晶圆加工位置下侧时，分别通过不同的第二驱动机构402进行升降控制，便于对各个晶圆加工位置或各个承载组件2的控制。
本发明的一些实施例中，所述处理腔100设置为若干个，且各个所述处理腔100独立工作，并且若干个所述处理腔100至少包括第一加热腔102和第一工艺腔101；
所述S2和所述S3具体包括：
S31、通过所述驱动装置4带动所述承载组件2移动至所述第一加热腔102，对所述承载组件2上的晶圆进行加热；
S32、通过所述驱动装置4带动所述承载组件2移动至所述第一工艺腔101，对所述承载组件2上的晶圆进行工艺处理。
本发明的一些具体实施例中，通过将所述处理腔100设置为多个，便于通过不同的处理腔100进行不同的处理加工，通过设置至少一个加热腔102和至 少一个工艺腔101，能够在同一个晶圆处理设备11对同一晶圆进行加热和加工。
本发明的一些实施例中，所述加热腔102和所述处理腔100均设置为两个；
所述S31具体包括：
S311、通过所述驱动装置4带动所述承载组件2移动至第一加热腔102，对所述承载组件2上的晶圆进行第一次加热；
S312、通过所述驱动装置4带动所述承载组件2移动至第二加热腔102，对所述承载组件2上的晶圆进行第二次加热；
所述S32具体包括：
S321、通过所述驱动装置4带动所述承载组件2移动至第一工艺腔101，对所述承载组件2上的晶圆进行第一工艺处理；
S322、通过所述驱动装置4带动所述承载组件2移动至第二工艺腔101，对所述承载组件2上的晶圆进行第二工艺处理。
本发明的一些具体实施例中，通过将所述加热腔102和所述处理腔100均设置为两个，能够通过不同的加热腔102和不同的工艺腔101对同一承载组件2上的晶圆进行分步加热或加工。
本发明的一些实施例中，所述承载组件2、所述加热腔102和所述工艺腔100均设置为两个；
所述S31具体包括：通过所述驱动装置4带动两个所述承载组件2分别移动至两个所述加热腔102，对两个所述承载组件2上的第一批晶圆、和第二批晶圆至少在第一预定时间内分别在第一加热腔102、第二加热腔内进行加热；
所述S32具体包括：通过所述驱动装置4带动两个所述承载组件2分别移动至两个所述工艺腔101，对两个所述承载组件2上的第一批晶圆、和第二批晶圆至少在第二预定时间内分别在第一工艺腔101、第二工艺腔内进行工艺处理。
本发明的一些具体实施例中，通过将所述承载组件2、所述加热腔102和所 述处理腔100均设置为两个，能够通过不同承载组件2对两组或两个晶圆进行同步加工，即同时进行加热加工，或同时进行工艺加工，又或一个或一组进行加热加工、另一个或另一组进行工艺加工。
虽然在上文中详细说明了本发明的实施方式，但是对于本领域的技术人员来说显而易见的是，能够对这些实施方式进行各种修改和变化。但是，应理解，这种修改和变化都属于权利要求书中所述的本发明的范围和精神之内。而且，在此说明的本发明可有其它的实施方式，并且可通过多种方式实施或实现。

Claims (29)

  1. 一种晶圆处理设备，其特征在于，包括驱动装置、转换腔、处理腔、第一抽气装置、第二抽气装置和承载组件；
    所述处理腔与所述转换腔连通；其中，所述转换腔用于提供密封空间，所述第一抽气装置与所述转换腔连通，所述第一抽气装置用于将所述转换腔内的气体抽出，以对所述转换腔进行第一真空处理；其中，所述处理腔用于处理晶圆，所述第二抽气装置与所述处理腔连通，所述第二抽气装置用于将所述处理腔内的气体抽出，以对所述处理腔进行第二真空处理；所述承载组件设置于所述转换腔内，所述承载组件用于承载晶圆，所述驱动装置用于调整所述承载组件在所述转换腔的位置，所述驱动装置并用于驱动所述承载组件在所述转换腔和所述处理腔之间移动。
  2. 根据权利要求1所述的晶圆处理设备，其特征在于，所述处理腔至少包括第一加热腔和第一工艺腔，其中所述第一加热腔用于对晶圆进行加热处理，所述第一工艺腔用于对晶圆进行工艺加工。
  3. 根据权利要求2所述的晶圆处理设备，其特征在于，所述处理腔至少包括第一加热腔、第二加热腔，以及第一工艺腔和第二工艺腔，其中所述第一加热腔、第二加热腔用于分别对第一批晶圆和第二批晶圆进行加热处理，所述第一工艺腔、第二工艺腔用于分别对第一批晶圆和第二批晶圆进行工艺加工。
  4. 根据权利要求1所述的晶圆处理设备，其特征在于，所述处理腔设置于所述转换腔上侧或下侧，所述驱动装置设置于所述转换腔远离所述处理腔的一侧。
  5. 根据权利要求1所述的晶圆处理设备，其特征在于，所述驱动装置包括第一驱动机构、第二驱动机构和转换器；
    所述转换器设置于所述转换腔，所述第一驱动机构与所述转换器连接，所述第一驱动机构用于带动所述转换器移动或转动；
    所述承载组件设置于所述转换器，所述第二驱动机构设置于所述转换器一侧，所述第二驱动机构用于带动所述承载组件在所述处理腔与所述转换腔之间移动。
  6. 根据权利要求5所述的晶圆处理设备，其特征在于，所述转换器与所述第一驱动机构为可拆卸连接。
  7. 根据权利要求6所述的晶圆处理设备，其特征在于，所述驱动装置还包括第三驱动机构；
    所述第三驱动机构设置于所述转换器一侧，所述第三驱动机构用于带动所述转换器和所述承载组件移动。
  8. 根据权利要求5所述的晶圆处理设备，其特征在于，所述承载组件设置为至少两个。
  9. 根据权利要求5所述的晶圆处理设备，其特征在于，所述第二驱动机构设置为至少两个，且各个所述第二驱动机构独立工作。
  10. 根据权利要求1所述的晶圆处理设备，其特征在于，所述承载组件设有N个支撑部，各个所述支撑部均用于支撑所述晶圆，N为大于1的整数。
  11. 根据权利要求1所述的晶圆处理设备，其特征在于，所述处理腔设置为若干个，且各个所述处理腔独立工作，所述驱动装置用于驱动所述承载组件在各个所述处理腔和所述转换腔之间移动。
  12. 根据权利要求1所述的晶圆处理设备，其特征在于，还包括供给装置；
    所述供给装置与所述处理腔连通，所述供给装置用于提供所述处理腔处理所述晶圆的原料。
  13. 根据权利要求1所述的晶圆处理设备，其特征在于，还包括设置于所述承载组件的密封件，所述密封件用于隔断所述转换腔与所述处理腔。
  14. 根据权利要求1所述的晶圆处理设备，其特征在于，还包括第四驱动机 构；
    所述第四驱动机构设置于所述承载组件一侧，所述第四驱动机构用于带动所述承载组件转动。
  15. 根据权利要求1所述的晶圆处理设备，其特征在于，还包括基体；
    所述基体设有所述处理腔和所述转换腔，所述驱动装置设置于所述基体，且所述驱动装置与所述基体之间的密封方式为动密封。
  16. 根据权利要求15所述的晶圆处理设备，其特征在于，还包括第五驱动机构；
    所述基体包括第一固定部和第二固定部；
    所述处理腔设置于所述第一固定部，所述第一固定部和所述第二固定部形成了所述转换腔；
    所述第五驱动机构设置于所述第一固定部和/或所述第二固定部，所述第五驱动机构用于带动所述第一固定部或所述第二固定部移动。
  17. 根据权利要求1所述的晶圆处理设备，其特征在于，还包括加热装置；
    所述加热装置与所述转换腔连通，所述加热装置用于对所述转换腔进行加热。
  18. 一种晶圆处理系统，其特征在于，包括传输设备和权利要求1至19中任一项所述的晶圆处理设备；
    所述晶圆处理设备设有传输通道，所述传输设备与所述传输通道连通，所述传输设备用于输送所述晶圆。
  19. 根据权利要求18所述的晶圆处理系统，其特征在于，所述晶圆处理设备设置为至少两个，且各个所述晶圆处理设备分别设置于所述传输设备不同侧，所述传输设备用于输送晶圆至各个所述晶圆处理设备、且所述传输设备用于输送各个所述晶圆处理设备的晶圆。
  20. 根据权利要求18所述的晶圆处理系统，其特征在于，还包括前端处理设备；
    所述前端处理设备设置于所述传输设备一侧，所述前端处理设备设有晶圆流转盒，所述传输设备将所述晶圆输送至所述晶圆流转盒和/或所述晶圆处理设备，所述前端处理设备用于输送所述晶圆流转盒。
  21. 根据权利要求20所述的晶圆处理系统，其特征在于，还包括晶圆传送盒和传输装置；
    所述晶圆传送盒设置于所述前端处理设备，所述前端处理设备用于将所述晶圆流转盒输送至所述晶圆传送盒；
    所述传输装置用于输送所述晶圆传送盒。
  22. 根据权利要求1项所述的晶圆处理设备的控制方法，其特征在于，包括：
    S1、将晶圆输送至所述转换腔内的所述承载组件上，其中第一抽气装置与所述转换腔连通，所述第一抽气装置用于将所述转换腔内的气体抽出，以对所述转换腔进行第一真空处理；
    S2、通过所述驱动装置带动所述承载组件移动至所述处理腔，其中第二抽气装置与所述处理腔连通，所述第二抽气装置用于将所述处理腔内的气体抽出，以对所述处理腔进行第二真空处理；
    S3、通过所述处理腔对所述承载组件上的晶圆进行加工处理；
    S4、通过所述驱动装置带动所述承载组件将完成处理的晶圆输送至所述转换腔；
    S5、将完成处理的晶圆移出所述转换腔。
  23. 根据权利要求22所述的晶圆处理设备的控制方法，其特征在于，所述驱动装置包括第一驱动机构、第二驱动机构和转换器；
    所述S2具体包括：
    S21、通过所述第一驱动机构带动所述转换器上的所述承载组件移动，调整所述承载组件位于所述转换腔的位置；
    S22、通过所述第二驱动机构带动所述承载组件移动至所述处理腔。
  24. 根据权利要求23所述的晶圆处理设备的控制方法，其特征在于，所述处理腔设置于所述转换腔上侧或下侧，所述驱动装置设置于所述转换腔远离所述处理腔的一侧；
    所述S22具体包括：通过所述第二驱动机构带动所述承载组件沿上下方向移动至所述处理腔。
  25. 根据权利要求24所述的晶圆处理设备的控制方法，其特征在于，所述第二驱动机构至少设置为两个，且各个所述第二驱动机构独立工作所述；
    S22还包括：通过至少两个所述第二驱动机构分别带动所述承载组件沿上下方向移动至所述处理腔。
  26. 根据权利要求22所述的晶圆处理设备的控制方法，其特征在于，所述处理腔设置为若干个，且各个所述处理腔独立工作，并且若干个所述处理腔至少包括第一加热腔和第一工艺腔；
    所述S2和所述S3具体包括：
    S31、通过所述驱动装置带动所述承载组件移动至所述第一加热腔，对所述承载组件上的晶圆进行加热；
    S32、通过所述驱动装置带动所述承载组件移动至所述第一工艺腔，对所述承载组件上的晶圆进行工艺处理。
  27. 根据权利要求26所述的晶圆处理设备的控制方法，其特征在于，所述加热腔和所述工艺腔均设置为两个；
    所述S31具体包括：
    S311、通过所述驱动装置带动所述承载组件移动至第一加热腔，对所述承 载组件上的晶圆进行第一次加热；
    S312、通过所述驱动装置带动所述承载组件移动至第二加热腔，对所述承载组件上的晶圆进行第二次加热；
    所述S32具体包括：
    S321、通过所述驱动装置带动所述承载组件移动至第一工艺腔，对所述承载组件上的晶圆进行第一工艺处理；
    S322、通过所述驱动装置带动所述承载组件移动至第二工艺腔，对所述承载组件上的晶圆进行第二工艺处理。
  28. 根据权利要求22所述的晶圆处理设备的控制方法，其特征在于，所述承载组件、所述加热腔和所述工艺腔均设置为两个；
    所述S31具体包括：通过所述驱动装置带动两个所述承载组件分别移动至两个所述加热腔，对两个所述承载组件上的第一批晶圆、和第二批晶圆至少在第一预定时间内分别在第一加热腔、第二加热腔内进行加热；
    所述S32具体包括：通过所述驱动装置带动两个所述承载组件分别移动至两个所述工艺腔，对两个所述承载组件上的第一批晶圆、和第二批晶圆至少在第二预定时间内分别在第一工艺腔、第二工艺腔内进行工艺处理。
  29. 根据权利要求22所述的晶圆处理设备的控制方法，其特征在于，还包括：
    S0、提供前端处理设备和传输设备；
    所述S1具体包括：通过所述前端处理设备存放待加工晶圆，通过所述传输设备将待加工晶圆移动至所述转换腔的承载组件上。
PCT/CN2022/141351 2022-01-04 2022-12-23 晶圆处理设备、晶圆处理系统及控制方法 WO2023130984A1 (zh)

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