WO2023127775A1 - Composition, agent de polissage et procédé de polissage d'un matériau de base - Google Patents

Composition, agent de polissage et procédé de polissage d'un matériau de base Download PDF

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Publication number
WO2023127775A1
WO2023127775A1 PCT/JP2022/047825 JP2022047825W WO2023127775A1 WO 2023127775 A1 WO2023127775 A1 WO 2023127775A1 JP 2022047825 W JP2022047825 W JP 2022047825W WO 2023127775 A1 WO2023127775 A1 WO 2023127775A1
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composition
polishing
mass
poly
acid amide
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PCT/JP2022/047825
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English (en)
Japanese (ja)
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篤 菅原
淳 小西
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株式会社レゾナック
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Publication of WO2023127775A1 publication Critical patent/WO2023127775A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • composition containing abrasive grains and poly-N-vinylcarboxylic acid amide which is not easily denatured by heat.
  • CMP Chemical Mechanical Polishing
  • polishing liquids frequently used in CMP technology include silica-based polishing liquids containing silica (silicon oxide) particles such as fumed silica and colloidal silica as abrasive grains.
  • Silica-based polishing liquids are highly versatile, and can polish a wide variety of materials, including insulating materials and conductive materials, by appropriately selecting the content of abrasive grains, pH, additives, and the like.
  • the demand for a polishing liquid containing cerium compound particles as abrasive grains is increasing as a polishing liquid mainly intended for insulating materials such as silicon oxide.
  • a cerium oxide-based polishing liquid containing cerium oxide particles as abrasive grains can polish at a high speed even with a lower abrasive grain content than a silica-based polishing liquid.
  • Patent Documents 1 to 4 are examples of poly-N-vinylcarboxylic acid amides used for polishing liquids and cleaning agents.
  • Patent Document 1 describes a protective film agent for laser dicing using poly-N-vinylacetamide.
  • Patent Document 2 describes a method for reducing the CMP polishing rate by using a water-soluble polymer having a solubility parameter of 9.0 to 14.0 and containing a heteroatom together with an abrasive. and poly-N-vinylacetamide is also mentioned as a water-soluble polymer containing heteroatoms.
  • Patent Document 3 discloses a cleaning liquid used for cleaning the surface of a substrate that has been polished with a CMP polishing liquid containing cerium compound particles, in which poly-N-vinylacetamide is used as a nonionic water-soluble polymer. is stated.
  • Patent Document 4 discloses a polishing composition containing an oxidizing agent containing a halogen atom and an organic compound (poly-N-vinylacetamide) containing an amide bond having a heterocyclic structure, and a group IV material. Disclosed is a polishing composition suitable for polishing an object having a layer containing and capable of preventing dissolution of a group IV material.
  • polishing scratches that occur during polishing have become a problem. If many coarse particles are present during polishing, polishing scratches tend to increase during polishing.
  • a polishing liquid slurry
  • a film to be polished on a substrate attached to a spindle head is pressed against the polishing pad on the surface plate. , rotating the surface plate and the spindle head to polish the film to be polished on the substrate.
  • the polishing agent used in CMP is generally a polishing liquid containing water, abrasive grains, and, if necessary, dispersants and water-soluble polymers.
  • the polishing liquid is supplied to the polishing disk again and reused after removing the foreign matter. Since the polishing is carried out in a state where the polishing liquid is in a state where the polishing liquid is heated, heat is generated due to frictional heat, and repeated use tends to increase the heat history of the polishing liquid.
  • the dispersing power of abrasive grains and the film properties do not change.
  • the dispersant and water-soluble polymer contained in the polishing liquid are degraded due to the heat history during polishing, and the abrasive grains aggregate in the polishing liquid, resulting in an increase in particle size and contributing to polishing scratches.
  • Patent Documents 1 to 4 do not describe heat resistance in a liquid state such as an aqueous solution or slurry.
  • poly-N-vinylcarboxylic acid amide originally has dispersibility in low-molecular-weight products, and film-forming properties in high-molecular-weight products.
  • polishing can be performed even in the CMP field, which has a large thermal history.
  • the inventors have found that the dispersion state of the agent can be maintained and the coating properties on the non-polishing layer are not impaired, and polishing accuracy can be maintained, leading to the completion of the present invention.
  • the configuration of the present invention is as follows. [1] A composition containing water, abrasive grains and poly-N-vinylcarboxylic acid amide, The poly-N-vinylcarboxylic acid amide has a weight average molecular weight of 1,000 to 5,000,000, A composition wherein the pH of said composition is from 6.0 to 14.0. [2] The composition according to [1], wherein the poly-N-vinylcarboxylic acid amide is poly-N-vinylacetamide. [3] The composition according to [1] or [2], wherein the increase rate of the 10% diameter in the cumulative particle size distribution based on volume is 100% or less after heat history of the composition at 90° C. for 10 days. .
  • the composition according to . [5] The composition according to any one of [1] to [4], wherein the abrasive grains are cerium.
  • [6] The composition according to any one of [1] to [5], wherein the water content in the composition is 50 to 90% by mass.
  • a polishing agent comprising the composition according to any one of [1] to [6].
  • a method for polishing a substrate comprising the step of polishing the substrate using a polishing pad to which the composition according to any one of [1] to [6] is adhered.
  • Poly-N-vinylcarboxylic acid amide has high heat resistance in an aqueous solution state, and can maintain the dispersed state of abrasive grains even when used as a polishing liquid in the field of CMP, etc., which has a large thermal history in an aqueous solution.
  • FIG. 1 is a photograph showing the appearance of a composition after a heat dispersion retention test in Example 1.
  • FIG. 4 is a photograph showing the appearance of the composition after the heat dispersion retention test in Example 2.
  • FIG. 4 is a photograph showing the appearance of the composition after the heat dispersion retention test in Example 3.
  • FIG. 1 is a photograph showing the appearance of a composition after a heat dispersion retention test in Comparative Example 1.
  • FIG. 4 is a photograph showing the appearance of the composition after the heat dispersion retention test in Comparative Example 2.
  • FIG. 4 is a photograph showing the appearance of the composition after the heat dispersion retention test in Comparative Example 3.
  • FIG. 4 is a photograph showing the appearance of the composition after the heat dispersion retention test in Comparative Example 4.
  • FIG. 4 is a photograph showing the appearance of the composition after the heat dispersion retention test in Comparative Example 4.
  • FIG. 4 is a photograph showing the appearance of the composition after the heat dispersion retention test in Comparative Example 5.
  • FIG. 4 is a photograph showing the appearance of the composition after the heat dispersion retention test in Comparative Example 6.
  • FIG. 4 is a photograph showing the appearance of the composition after the heat dispersion retention test in Comparative Example 7.
  • FIG. 4 is a photograph showing the appearance of the composition after the heat dispersion retention test in Comparative Example 8.
  • FIG. 1 is photographs showing changes in the appearance of compositions in Examples 4 and 5 and Comparative Examples 9 to 13 as a result of a heat re-dissolution test.
  • the composition of this embodiment contains water, abrasive grains and poly-N-vinylcarboxylic acid amide, and has a pH of 6.0 to 14.0.
  • abrasive grains used in the composition of the present invention are not particularly limited, oxides of at least one metal element selected from aluminum, silicon, titanium, cerium, zirconium and magnesium are preferred. These may be chemically modified.
  • the abrasive grains are preferably at least one selected from alumina, silica, titanium oxide, cerium, zirconia, and magnesium oxide, more preferably silica or cerium.
  • silica colloidal silica is preferably used, although dry powder can be used.
  • Cerium oxide is more preferable, and even with a low content, the substrate can be polished at high speed.
  • cerium is not particularly limited, cerium oxide is preferred.
  • the average particle size of the abrasive grains is preferably 10-1000 nm, more preferably 20-500 nm. If the average particle size of the abrasive grains is 10 nm or more, a good polishing rate tends to be obtained, and if it is 1000 nm or less, the object to be polished tends to be less likely to be scratched.
  • the average particle size of the abrasive grains is evaluated by d50 (median diameter of volume distribution, cumulative median value) measured by a laser diffraction particle size distribution meter.
  • the surface of the abrasive grains may be modified with a silane coupling agent or the like.
  • the content of abrasive grains is appropriately selected depending on the abrasive grains used.
  • silica silica solid content in the case of colloidal silica
  • it is preferably 25% by mass or less, more preferably 20% by mass or less, and 15% by mass or less, based on the total mass of the composition. is more preferred.
  • cerium it is preferably 5% by mass or more, more preferably 10% by mass or more, and still more preferably 15% by mass or more, based on the total mass of the composition. In the case of cerium, it is preferably 30% by mass or less, more preferably 25% by mass or less, and even more preferably 20% by mass or less, based on the total mass of the composition.
  • Water is preferably ion-exchanged water, and more preferably ultrapure water. Ultrapure water refers to water having an electrical conductivity of 0.1 mS/m or less at 25°C.
  • the content of water in the composition is 50% by mass or more, preferably 60% by mass or more, and more preferably 70% by mass or more, based on the total mass of the composition.
  • the upper limit is 90% by mass or less, preferably 85% by mass or less, and more preferably 80% by mass or less.
  • the content of water includes the amount of dispersion medium for colloidal silica.
  • Water is used as a dispersion medium for the composition.
  • Water may also contain a small amount of an organic solvent for the purpose of improving the dispersing effect, and the organic solvent is not particularly limited as long as it is compatible with water, but alcohol is preferred, and isopropyl alcohol is more preferred.
  • a small amount is preferably 40% by mass or less, more preferably 10% by mass or less, and still more preferably 3% by mass or less based on the total amount of the dispersion medium. 0.1% by mass or more of the organic solvent is preferable.
  • poly-N-vinylcarboxylic acid amide a polymer of N-vinylcarboxylic acid amide (referred to as poly-N-vinylcarboxylic acid amide) is used as the water-soluble polymer.
  • Poly-N-vinylcarboxylic acid amide is obtained by polymerizing the N-vinylcarboxylic acid amide monomer represented by formula (1).
  • R 1 is any one selected from the group consisting of a hydrogen atom and a hydrocarbon group having 1 to 6 carbon atoms;
  • R 2 is a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms; group.
  • R 1 may form a ring structure with NR 2.
  • N-vinylcarboxylic acid amide monomers include N-vinylformamide, N-vinylacetamide, N-vinylpropionamide, N-vinylbenzamide, N-vinyl-N-methylformamide, N-vinyl -N-ethylformamide, N-vinyl-N-methylacetamide, N-vinyl-N-ethylacetamide and the like.
  • N-vinylacetamide is particularly preferred from the viewpoint of the balance between hydrophilicity and hydrophobicity of the polymer.
  • N-vinylcarboxylic acid amides may be used alone or in combination.
  • the N-vinylcarboxylic acid amide of the present invention preferably does not have a ring structure.
  • the poly-N-vinylcarboxylic acid amide used in this embodiment is preferably a polymer of only N-vinylcarboxylic acid amide.
  • monomers copolymerizable with the N-vinylcarboxylic acid amide may also be included.
  • Other monomers are selected from the group consisting of unsaturated carboxylic acid monomers, salts of unsaturated carboxylic acid monomers, unsaturated carboxylic acid ester monomers, vinyl ester monomers, unsaturated nitrile monomers. At least one selected monomer. Of these, (meth)acrylic acid and salts thereof are more preferred, and sodium acrylate is even more preferred.
  • (meth)acrylic acid” means acrylic acid and methacrylic acid.
  • Poly-N-vinylcarboxylic acid amide is a structural unit derived from other monomers (hereinafter also referred to as "other structural units") when the structural unit derived from N-vinylcarboxylic acid amide is set to 1.00. is less than 0.250, the solubility in water is obtained, which is preferable.
  • the N-vinylcarboxylic acid amide polymer preferably has a molar ratio of other structural units of 0.150 or less, more preferably 0.
  • the weight average molecular weight of the poly-N-vinylcarboxylic acid amide used in the present embodiment is 1000 to 5000000, preferably 2000 to 3000000, more preferably 3000 to 1000000, still more preferably 5000 to 500000. is.
  • the weight-average molecular weight is within the above range, the dispersibility of the abrasive grains is high, and the heat resistance when made into an aqueous solution is high.
  • the viscosity of a 5% by mass aqueous solution of poly-N-vinylcarboxylic acid amide at 20° C. is preferably 10 mPa ⁇ s or more and 5000 mPa ⁇ s or less, more preferably 20 mPa ⁇ s or more and 2000 mPa ⁇ s or less, and still more preferably 30 mPa ⁇ s. s or more and 100 mPa ⁇ s or less.
  • Such a poly-N-vinylcarboxylic acid amide has extremely high heat resistance in an aqueous solution state, and can maintain the state of dispersion of polishing abrasive grains and high coating properties on abrasive grains.
  • the concentration of the poly-N-vinylcarboxylic acid amide in the composition is appropriately selected according to the application for which the composition is used, the coating method, the viscosity of the coating solution, and the like. , preferably 0.01 to 10.0% by mass, more preferably 0.05 to 5.0% by mass, and still more preferably 0.1 to 1.0% by mass. Within this range, it is possible to maintain a good dispersion state of the abrasive grains, and to obtain coating properties according to the molecular weight of the poly-N-vinylcarboxylic acid amide used.
  • Poly-N-vinylcarboxylic acid amides having different molecular weights can be used in combination depending on the purpose.
  • chelating agents, metal anticorrosive agents, metal oxidizing agents, viscosity modifiers, surfactants, and the like can optionally be added to the composition.
  • chelating agent for example, carbonyl compounds such as acetylacetonate are preferred.
  • Viscosity modifiers include, for example, urethane polymers and acrylates.
  • surfactants include cationic surfactants, anionic surfactants, anionic polyelectrolytes, nonionic surfactants, amphoteric surfactants, fluorinated surfactants, and mixtures thereof. be able to.
  • the metal anticorrosive is at least selected from the group consisting of triazole compounds, pyridine compounds, pyrazole compounds, pyrimidine compounds, imidazole compounds, guanidine compounds, thiazole compounds, tetrazole compounds, triazine compounds, and hexamethylenetetramine.
  • One type can be used.
  • the metal oxidizing agent is preferably an oxidizing agent containing no non-volatile components, such as hydrogen peroxide.
  • the pH of the composition according to this embodiment ranges from 6.0 to 14.0, preferably from 6.0 to 13.0, and more preferably from 8.0 to 10.0. Within this pH range, the heat resistance of the poly-N-vinylcarboxylic acid amide in the aqueous solution is high, and the dispersibility of the abrasive grains is improved, so that the polishing of silicon wafers and the like can be performed efficiently. can be done. In addition, it defines as pH in the liquid temperature of 25 degreeC. pH can be measured with a pH meter.
  • the pH of the composition according to the present embodiment is derived from poly-N-vinylcarboxylic acid amide, and can be adjusted to a desired pH by further adjusting the content of additives.
  • the pH of the composition according to this embodiment can also be adjusted by adding alkaline components such as amino acids, ammonia, amines, and tetramethylammonium hydroxide.
  • alkaline components such as amino acids, ammonia, amines, and tetramethylammonium hydroxide.
  • a component containing an alkali (earth) metal element it is preferable not to add.
  • the 10% diameter increase rate of the composition after heat history for 10 days at 90°C is preferably 100% or less, more preferably 70% or less, and still more preferably 50% or less.
  • the residual rate in a re-dissolution test by water immersion is preferably 10% by mass or less, more preferably 5% or less, and even more preferably 3% or less.
  • the composition of the present embodiment can be suitably used as a polishing liquid, and the composition of the present embodiment is used in a step of removing at least part of a substrate containing a material to be polished (e.g., insulating material) by CMP. be able to.
  • a method for polishing a substrate it can be used in a step of polishing a substrate having a material to be polished (insulating material) on its surface.
  • a polishing pad is brought into contact with the composition described above, and the polishing pad is moved relative to the substrate to abrade at least a portion of the substrate and polish the substrate.
  • a substrate is employed that can be planarized or polished with the composition with any suitable polishing pad.
  • the base material not only a silicon base material but also a base material to which polishing treatment can be applied, such as a silicon base material on which a polysilicon film, a SiO 2 film, or a metal wiring film is formed, can be applied.
  • polishing pad for example, a woven or non-woven polishing pad can be preferably used.
  • Suitable polishing pads specifically comprise polymers such as polyvinyl chloride, polyvinyl fluoride, nylon, fluorocarbons, polycarbonates, polyesters, polyacrylates, polyethers, Mention may be made of polyethylene, polyamide, polyurethane, polystyrene, polypropylene, co-formed products thereof, and mixtures thereof.
  • a polishing apparatus As a polishing apparatus, a general polishing apparatus having a holder for holding a substrate having a material to be polished, etc., and a polishing surface plate to which a motor or the like capable of changing the number of revolutions is attached and to which a polishing pad can be attached. Equipment is available. As the polishing apparatus, model numbers EPO-111 and F-REX300 manufactured by Ebara Corporation; product names Mirra and Reflexion manufactured by Applied Materials, etc. can be used.
  • Polishing conditions are not limited, but the rotational speed of the polishing surface plate is preferably a low rotation speed of 200 rpm or less so that the substrate does not pop out, and the pressure (processing load) applied to the substrate is such that scratches are not generated after polishing. 100 kPa or less is preferable from the viewpoint that it is difficult to generate.
  • the composition can be continuously supplied to the polishing pad, such as by a pump. The amount supplied is not limited, but it is preferred that the surface of the polishing pad is always covered with the composition.
  • the substrate after polishing is thoroughly washed in running water, and then dried by using a spin dryer or the like to shake off water droplets adhering to the substrate.
  • Water-soluble polymer (1) Poly-N-vinylacetamide (PNVA (registered trademark)) GE-191-103 manufactured by Showa Denko Co., Ltd., solid content 10% by mass, viscosity 14000 to 20000 mPa s GE-191-104 manufactured by Showa Denko Co., Ltd., solid content 10% by mass, viscosity 1500 to 3000 mPa s GE-191-107 manufactured by Showa Denko Co., Ltd., solid content 10% by mass, viscosity 50 mPa s GE-191-053 manufactured by Showa Denko Co., Ltd., solid content 5% by mass, viscosity 8000 to 15000 mPa s (2) DMAA Polymerization was performed using N,N-dimethylacrylamide (Fuji Film Wako Pure Chemical Industries, Ltd.) as a raw material.
  • PNVA registered trademark
  • Solid content concentration 10% aqueous solution polymer (3) ACMO Polymerization was carried out using 4-acryloylmorpholine (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) as a raw material. Solid content concentration 10% aqueous solution polymer (4) Polyvinylpyrrolidone PVP K-90 Nippon Shokubai Co., Ltd. (5) Polyethylene glycol PEG20000 FUJIFILM Wako Pure Chemical Industries, Ltd. (6) Polyvinyl alcohol PVA, average degree of polymerization n 1500 to 1800 Fuji Film Wako Pure Chemical Co., Ltd.
  • cerium slurry an aqueous solution of cerium (hereinafter referred to as cerium slurry) was placed in a glass bottle having a capacity of 50 ml for preparation of the composition.
  • a glass bottle containing the polymer-added cerium slurry was sealed, mixed, and then allowed to stand in a constant temperature bath at 20°C for 20 hours to prepare a composition.
  • SUS vat stainless steel vat (hereinafter also referred to as "SUS vat") (length 30 cm, width 20 cm, height 10 cm) and put it in an air oven (DN-41 manufactured by Yamato Scientific Co., Ltd.) at 90 ° C. under air. , to stand for a period of 10 days.
  • SUS vat stainless steel vat
  • the pH of the composition was measured at a temperature of 25° C. using a pH meter (F-70 manufactured by Horiba, Ltd.).
  • ⁇ Weight average molecular weight The weight average molecular weight of the water-soluble polymer is poly-N-vinyl
  • the acetamide concentration was adjusted to 0.05% by mass and allowed to stand for 20 hours. This was filtered through a membrane filter with a pore size of 0.45 ⁇ m, and the weight-average molecular weight of the filtrate was measured by GPC-MALS. Analyzer and measurement conditions GPC: SHODEX (registered trademark), SYSTEM-21 manufactured by Showa Denko K.K.
  • Measurement conditions Silicon photodetector ⁇ Batch cell unit ⁇ Liquid temperature: 25°C ⁇ Amount of sample 0.5ml dispersed in 5ml of dispersion medium (ion-exchanged water) The 10% diameter (hereinafter “d10 ”).
  • Table 1 and Figure 1 show the properties of the composition and the results of the heat dispersion retention test.
  • compositions The composition is applied on a remelting test glass plate with a spatula or dropper.
  • the coated material is placed on a SUS vat and heated at 200°C for 2 hours in an air oven (DN-41 manufactured by Yamato Scientific Co., Ltd.).
  • Residual rate (%) (mass before drying - mass after drying) / (mass before drying) x 100
  • ⁇ : Severely colored Table 2 shows the results of the re-dissolution test.
  • the residual rate of each example was 3% by mass or less, which was lower than that of the comparative example. This indicates that it was almost dissolved by immersion after heating.
  • the comparative example had a residual rate of over 90% and was hardly dissolved. This indicates that the polymer had lost its water solubility.
  • the change in appearance was large in the comparative example (for example, change in shape such as yellowing and cracking), and it was presumed to be deteriorated by heating.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

L'invention vise à fournir une composition qui conserve son hydrophilie et ne perd pas sa dispersibilité ou les propriétés du film même dans un environnement présentant un historique thermique, tout en pouvant être adaptée à la génération de chaleur au cours du polissage. L'invention concerne à cet effet une composition contenant de l'eau, des grains abrasifs et un acide poly-N-vinylcarboxamide, le poly-N-vinylcarboxamide ayant une masse moléculaire moyenne en masse de 1 000 à 5 000 000 ; et la composition ayant un pH de 6,0 à 14,0.
PCT/JP2022/047825 2021-12-28 2022-12-26 Composition, agent de polissage et procédé de polissage d'un matériau de base WO2023127775A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015141687A1 (fr) * 2014-03-17 2015-09-24 日本キャボット・マイクロエレクトロニクス株式会社 Composition de suspension et procédé de polissage de substrat
WO2015151673A1 (fr) * 2014-03-31 2015-10-08 株式会社フジミインコーポレーテッド Composition pour le polissage
WO2019181016A1 (fr) * 2018-03-22 2019-09-26 日立化成株式会社 Liquide de polissage, ensemble liquide de polissage et procédé de polissage
WO2020255862A1 (fr) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 Composition de polissage chimico-mécanique, composition de rinçage, procédé de polissage chimico-mécanique et procédé de rinçage

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015141687A1 (fr) * 2014-03-17 2015-09-24 日本キャボット・マイクロエレクトロニクス株式会社 Composition de suspension et procédé de polissage de substrat
WO2015151673A1 (fr) * 2014-03-31 2015-10-08 株式会社フジミインコーポレーテッド Composition pour le polissage
WO2019181016A1 (fr) * 2018-03-22 2019-09-26 日立化成株式会社 Liquide de polissage, ensemble liquide de polissage et procédé de polissage
WO2020255862A1 (fr) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 Composition de polissage chimico-mécanique, composition de rinçage, procédé de polissage chimico-mécanique et procédé de rinçage

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