WO2023125517A1 - 一种驱动电路、芯片及电子设备 - Google Patents

一种驱动电路、芯片及电子设备 Download PDF

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Publication number
WO2023125517A1
WO2023125517A1 PCT/CN2022/142272 CN2022142272W WO2023125517A1 WO 2023125517 A1 WO2023125517 A1 WO 2023125517A1 CN 2022142272 W CN2022142272 W CN 2022142272W WO 2023125517 A1 WO2023125517 A1 WO 2023125517A1
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Prior art keywords
voltage
module
output
unit
circuit according
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PCT/CN2022/142272
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English (en)
French (fr)
Inventor
韩雪峰
欧阳振华
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合肥市芯海电子科技有限公司
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Publication of WO2023125517A1 publication Critical patent/WO2023125517A1/zh

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/083—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the ignition at the zero crossing of the voltage or the current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators

Definitions

  • the present application relates to the field of electronic technology, in particular to a driving circuit, a chip and an electronic device.
  • circuits need to be driven in a high-voltage environment, and such circuits can be called high-voltage driving circuits.
  • the high-voltage drive circuit uses low-voltage devices, the low-voltage devices may be broken down in a high-voltage environment, and cannot be used normally. Therefore, traditional high-voltage drive circuits are generally designed using high-voltage devices.
  • the area of the high-voltage device is large, which is not conducive to cost saving.
  • the embodiments of the present application provide a driving circuit, a chip and an electronic device, which can be designed using low-voltage devices under high-voltage driving conditions to reduce the area of the driving circuit.
  • the technical solution is as follows:
  • a driving circuit includes a high-voltage generating module and a driving module, and an output end of the high-voltage generating module is connected to the driving module;
  • the high-voltage generating module is used to generate a first voltage, and the first voltage is greater than a reference potential;
  • the driving module is configured to receive the first voltage and drive based on the power supply voltage and the first voltage.
  • a chip including the above driving circuit.
  • an electronic device including the above driving circuit.
  • the driving circuit may include a high-voltage generating module, configured to generate a first voltage higher than a reference potential, and use the first voltage as a reference potential to drive the driving module together with the supply voltage. Because the driving module is driven based on the power supply voltage and the first voltage, the voltage margin of the driving module is reduced, so that the driving module can be designed with low-voltage devices, which can reduce the area of the driving module, thereby reducing the overall area of the driving circuit.
  • FIG. 1 shows a schematic diagram of a driving circuit provided according to an exemplary embodiment of the present application
  • Fig. 2 shows a schematic diagram of a high voltage generating module provided according to an exemplary embodiment of the present application
  • Fig. 3 shows a schematic diagram of a voltage stabilizing module provided according to an exemplary embodiment of the present application
  • Fig. 4 shows a schematic diagram of an output module provided according to an exemplary embodiment of the present application
  • Fig. 5 shows a schematic diagram of an output module provided according to an exemplary embodiment of the present application
  • Fig. 6 shows a schematic diagram of an output module provided according to an exemplary embodiment of the present application
  • Fig. 7 shows a schematic diagram of a high voltage generating module provided according to an exemplary embodiment of the present application
  • Fig. 8 shows a schematic diagram of a driving module provided according to an exemplary embodiment of the present application.
  • Fig. 9 shows a schematic diagram of a driving module provided according to an exemplary embodiment of the present application.
  • FIG. 10 shows a schematic diagram of an operational amplifier module provided according to an exemplary embodiment of the present application.
  • Fig. 11 shows a schematic diagram of a control module provided according to an exemplary embodiment of the present application.
  • Fig. 12 shows a schematic diagram of a resistance unit provided according to an exemplary embodiment of the present application.
  • Fig. 13 shows a schematic diagram of a driving circuit provided according to an exemplary embodiment of the present application.
  • the term “comprise” and its variations are open-ended, ie “including but not limited to”.
  • the term “based on” is “based at least in part on”.
  • the term “one embodiment” means “at least one embodiment”; the term “another embodiment” means “at least one further embodiment”; the term “some embodiments” means “at least some embodiments.”
  • Relevant definitions of other terms will be given in the description below. It should be noted that concepts such as “first” and “second” mentioned in this application are only used to distinguish different devices, modules or units, and are not used to limit the sequence of functions performed by these devices, modules or units or interdependence.
  • An embodiment of the present application provides a driving circuit, and the driving circuit may be integrated in a chip or arranged in an electronic device.
  • the driving circuit may include a high-voltage generating module and a driving module, and the output terminal of the high-voltage generating module is connected to the driving module.
  • a high-voltage generating module which can be used to generate a first voltage
  • the driving module can be used to receive the first voltage and drive based on the power supply voltage and the first voltage.
  • the first voltage is greater than the reference potential
  • the reference potential may refer to zero potential or a system reference potential, which is a potential reference point set in a chip or an electronic device.
  • the power supply voltage may refer to a power supply voltage or a battery voltage, and may also be a voltage output by other circuits for power supply, which is not limited in this embodiment.
  • the entire driving circuit may be driven based on the power supply voltage and the reference potential.
  • the above-mentioned first voltage may be generated based on a supply voltage and a reference potential.
  • the first voltage generated by the high-voltage generating module is used as a potential reference point of the driving module, and the driving module is driven based on the power supply voltage and the first voltage, so that the driving module can work normally.
  • the reference potential is usually zero potential or close to zero potential, which belongs to low voltage, receiving the reference potential in the circuit is usually called “grounding”.
  • This application uses the first voltage in the drive module to realize the original "grounding*" function, so it can The above-mentioned first voltage is called “high voltage ground”.
  • the high-voltage generating module may include a voltage stabilizing module and an output module, and an output terminal of the voltage stabilizing module is connected to the output module.
  • a voltage stabilizing module which can be used to output the second voltage
  • the output module can be used to output the first voltage based on the supply voltage and the second voltage.
  • the voltage stabilizing module may include a Zener diode, and voltage stabilization is performed based on the Zener diode.
  • the voltage stabilizing module may include a resistor, a Zener diode and a current source, the positive pole of the Zener diode is connected to the current source, and the negative pole is connected to The supply voltage; the resistance is set between the positive and negative poles of the Zener diode, and connected in parallel with the Zener diode; one end of the current source is connected to the Zener diode, and the other end is grounded, and connected in series with the Zener diode.
  • the output second voltage is the voltage at the cathode of the Zener diode.
  • the zener diode After the drive circuit is initialized, the zener diode reversely breaks down to stabilize the voltage, which is set to Vd, that is, the voltage across the zener diode or the resistor is Vd. If the supply voltage is the battery voltage VBAT, the second voltage output by the voltage stabilizing module may be VBAT-Vd.
  • the voltage stabilizing module can also use other specific circuits.
  • the above-mentioned current source can be replaced by a resistor, and it only needs to be able to generate a stable voltage.
  • This embodiment does not limit the specific circuit structure of the voltage stabilizing module.
  • the output module may include a first field effect transistor M1, the control terminal of the first field effect transistor M1 is used for receiving the second voltage, and the output terminal is used for outputting the first voltage.
  • the control terminal of the first field effect transistor M1 is a gate
  • the input terminal is a source/drain
  • the output terminal is a drain/source.
  • the first field effect transistor M1 can be an NMOS (N-Metal-Oxide-Semiconductor, N-type metal-oxide-semiconductor) tube, and the voltage at the control terminal (i.e. the gate voltage of the NMOS tube) ) is the above-mentioned second voltage, the voltage at the output end (i.e. the source voltage of the NMOS transistor) is the first voltage, and the input end (i.e. the drain electrode of the NMOS transistor) is in a high-impedance state.
  • NMOS N-Metal-Oxide-Semiconductor, N-type metal-oxide-semiconductor
  • the first voltage can be the second voltage and the threshold voltage
  • the threshold voltage refers to the voltage between the output terminal and the control terminal when the first field effect transistor is in a critical conduction state.
  • the first field effect transistor M1 may also be a PMOS (P-Metal-Oxide-Semiconductor, P-type metal-oxide-semiconductor) transistor, and the specific type of the first field effect transistor M1 is not limited in this embodiment.
  • PMOS P-Metal-Oxide-Semiconductor, P-type metal-oxide-semiconductor
  • the output module may further include a switch unit, one end of the switch unit is connected to the input end of the first field effect transistor M1, and the other end is used to receive the reference potential.
  • the switch unit can be used to control the voltage output by the high voltage generating module.
  • the first field effect transistor M1 is in the on state, when the switch unit is on, the first voltage output by the high voltage generation module is the reference potential, that is to say, the high voltage generation at this time
  • the module does not generate high voltage ground; when the switch unit is turned off, the input terminal of the first field effect transistor M1 is in a high impedance state, and the high voltage generating module can generate high voltage ground.
  • the switch unit may include a second field effect transistor M2, the control terminal of the second field effect transistor M2 is used to receive the switch control signal, the output terminal is connected to the input terminal of the first field effect transistor M1, and the input terminal is used to receive reference potential.
  • the control terminal of the second field effect transistor M2 is the gate, the input terminal is the source/drain, and the output terminal is the drain/source.
  • the second field effect transistor M2 may be a PMOS transistor.
  • the switch control signal is at a high level, the second field effect transistor M2 is turned off, that is, the switch unit is turned off; when the switch control signal is at a low level, the second field effect transistor M2 is turned on, that is, the switch unit is turned on Pass.
  • the second field effect transistor M2 may also be an NMOS transistor, and the specific type of the second field effect transistor M2 is not limited in this embodiment.
  • the switch unit may also be another switch circuit, and this embodiment does not limit the specific circuit structure of the switch unit.
  • the driving module may include a plurality of sub-driving modules, and the ground terminal of each sub-driving module is respectively used to receive the above-mentioned first voltage.
  • the sub-drive module may be composed of any part of the circuits in the drive module, and this embodiment does not limit the specific circuit structure of the sub-drive module.
  • the driving circuit includes a plurality of high-voltage generating modules, and each high-voltage generating module is connected to one or more sub-driving modules, so as to input the first voltage to each sub-driving module.
  • the current that the high-voltage generating module can withstand is limited, so multiple parallel-connected high-voltage generating modules can be set to share the current to ensure circuit performance.
  • the voltage stabilization module can be reused to provide the second voltage for multiple parallel output modules, and each output module outputs the above-mentioned first voltage respectively. Minimize the area as much as possible while including multiple high voltage generating modules.
  • the voltage-stabilizing module can be connected in series with multiple output modules, and multiple output modules can be connected in parallel.
  • the circuit formed by the voltage-stabilizing module and one output module is called a high-voltage generating module.
  • the above-mentioned drive circuit may refer to a boost circuit, which is used to realize a boost function, and at this time, the drive module may also be used to output a third voltage based on the power supply voltage.
  • the third voltage is greater than the power supply voltage, and may refer to a boosted output voltage. That is, the driving module can boost the supply voltage and output the boosted voltage.
  • the driving module may include an operational amplifier module and a booster module, and the output terminal of the operational amplifier module is connected to the booster module.
  • the operational amplifier module can be used to output a fourth voltage based on the supply voltage
  • the boosting module is configured to output a third voltage conforming to a set boosting parameter based on the fourth voltage.
  • the input voltage required by the booster module is not necessarily equal to the power supply voltage, so the operational amplifier module can be used to take the power supply voltage as an input, adjust the power supply voltage, and output a fourth voltage.
  • the fourth voltage is used as the input voltage of the boost module, and the boost module can increase the output voltage until the set boost parameter is reached, and the output voltage at this time is the above-mentioned third voltage.
  • the boost module may include a control module, and the control module may be used to output a start control signal based on the feedback voltage, the fourth voltage and the supply voltage of the boost module, and the start control The signal is used to control the working state of the booster module.
  • the boost module can be configured to increase the output voltage when the output voltage does not reach the above-mentioned set boost parameter; when the output voltage reaches the above-mentioned set boost parameter, stop increasing the output voltage.
  • the output voltage may also be kept at the above-mentioned third voltage, that is, kept at the boost parameter after reaching the set boost parameter.
  • the operational amplifier module may include a current source unit, a first resistance unit R1, a second resistance unit R2, and a third resistance unit R3, and the control module may include a fourth resistance unit R4 and a fifth resistance unit R5, and may pass
  • the above-mentioned unit makes the third voltage comply with the set boost parameters.
  • the current value of the current source unit may be a reference current value, or other constant current value, which is not limited in this embodiment.
  • a specific implementation manner can refer to the schematic diagram of the operational amplifier module shown in FIG. 10 .
  • the first resistance unit R1 On the input side of the operational amplifier, the first resistance unit R1 is connected in series with the current source unit. One end of the first resistance unit R1 is used to receive the supply voltage, the other end is connected to one end of the current source unit, and the other end of the current source unit is used to receive the reference potential. After the circuit is powered on, the first resistance unit R1 and the current source unit can be Form a pathway.
  • the non-inverting input terminal of the operational amplifier is used to receive the potential between the first resistance unit R1 and the current source unit.
  • the second resistance unit R2, the third resistance unit R3 and the third field effect transistor M3 are connected in series.
  • One end of the second resistance unit R2 is used to receive the power supply voltage, the other end is connected to one end of the third resistance unit R3, the other end of the third resistance unit R3 is connected to the output end of the third field effect transistor M3, and the third field effect transistor
  • the input terminal of M3 is used to receive the above-mentioned first voltage, that is, to receive the high voltage ground, and the control terminal is connected to the output terminal of the operational amplifier.
  • the inverting input terminal of the operational amplifier is used to receive the potential between the second resistor unit R2 and the third resistor unit R3.
  • the fourth voltage output by the operational amplifier module is the potential of the other end of the third resistance unit R3.
  • the control terminal of the third field effect transistor M3 is a gate
  • the input terminal is a source/drain
  • the output terminal is a drain/source.
  • the fourth voltage is VOUT1
  • the power supply voltage is VBAT
  • the control module may include a fourth resistance unit R4, a fifth resistance unit R5 and a comparison unit, and the rest of the boosting module used for boosting may be called a boosting unit.
  • the comparison unit includes two input terminals and an output terminal, the two input terminals are respectively the first input terminal and the second input terminal, and the comparator is used to compare the voltages of the first input terminal and the second input terminal, if the voltage of the first input terminal If the voltage at the second input terminal is greater than the voltage at the second input terminal, the output terminal can output the first level; if the voltage at the first input terminal is lower than the voltage at the second input terminal, the output terminal can output the second level.
  • the first level is high level and the second level is low level; or, the first level is low level and the second level is high level.
  • One end of the fourth resistance unit R4 is used to receive the fourth voltage, and the other end is connected to the fifth resistance unit R5, and the other end of the fifth resistance unit R5 is used to receive the feedback voltage output by the booster module.
  • the first input end of the comparison unit is used to receive the power supply voltage, the second input end is used to receive the potential between the fourth resistance unit R4 and the fifth resistance unit R5, and the output end is connected to the boost unit.
  • the comparison unit can output the first level as a starting
  • the control signal controls the start of the supercharging unit to realize the function of increasing the voltage.
  • the voltage Vq of the second input terminal of the comparison unit increases to be greater than the voltage of the first input terminal (that is, the supply voltage VBAT), then the state of the comparison unit is reversed, and the second input terminal can output Two levels, control the supercharging unit to stop increasing the voltage.
  • a specific supercharging unit may be formed based on an oscillating circuit and a charge pump unit, and may be realized by using an existing circuit structure. This embodiment does not limit the specific circuit structure of the supercharging unit.
  • VOUT1 the fourth voltage
  • VOUT2 the third voltage
  • Vq the boost parameter, that is, when the loop is stable
  • Vq the set boost parameter, that is, when the loop is stable
  • (VOUT2-VBAT)/ R5 (VBAT-VOUT1)/R4
  • VOUT2-VBAT INF*R1*R5(R2+R3)/(R2*R4).
  • VOUT2-VBAT is to set the boost parameter.
  • “Setting” means that the resistance values of the above-mentioned first resistance unit R1 to the fifth resistance unit R5 can be designed, and the current value of the current source unit can also be designed, and then To achieve the effect of controlling the boost parameters.
  • the resistance unit described above may be one resistance element, or a combination of multiple resistance elements.
  • the resistance values of the first resistance unit R1 , the second resistance unit R2 , the third resistance unit R3 , the fourth resistance unit R4 and the fifth resistance unit R5 are variable.
  • any of the above resistance units may be a combination of multiple resistance elements, and the resistance value of the access circuit may be controlled through logic.
  • the specific structure of the resistance unit is not limited in this embodiment.
  • the above-mentioned VOUT2-VBAT can be equal to 2*IREF*R1*R5/R4, therefore, at least the current source unit, the first resistor unit R1, the fourth resistor unit R4 and the fifth resistor unit R5 can be used to control the rise Pressure parameters are designed to reduce the difficulty of design.
  • the above introduction may refer to the realization of one boosting channel, and the boosting module may include multiple boosting channels, and the principle of each boosting channel is the same, which will not be repeated here.
  • Each boost channel can respectively output a corresponding third voltage, and the set boost parameters between every two boost channels are the same or different. That is to say, if it is necessary to obtain boosting channels with different boosting parameters, the fourth resistor unit R4 and the fifth resistor unit R5 of each boosting channel can be designed to obtain different boosting parameters.
  • the set boosting parameters of each boosting channel are the same; second, the set boosting parameters of each boosting channel are the same are different; thirdly, the set boost parameters of some boost channels are the same, and the set boost parameters of some boost channels are different.
  • the set boosting parameters of the boosting channel are not limited.
  • Figure 13 shows a specific drive circuit, wherein OP is the operational amplifier in the above-mentioned operational amplifier module, CMP is the above-mentioned comparison unit, OSC is the oscillation circuit in the above-mentioned boosting unit, CHP is the For the charge pump unit, EN is the start control signal, CLK is the clock control signal, H_AGND and H_CHP_AGND are the first voltage (ie high voltage ground).
  • the high-voltage ground generated by the high-voltage generation module can be input to the ground terminal in the operational amplifier module and the booster module.
  • the operational amplifier module generates a fourth voltage VOUT1 based on the power supply voltage
  • the control module can be based on the booster voltage.
  • the feedback voltage of the module, the fourth voltage VOUT1 and the power supply voltage are used to determine whether the output voltage of the booster module reaches the set boost parameter, and to control whether the booster module increases the voltage.
  • the output voltage of the booster module does not reach the above-mentioned set boost parameters, the output voltage can be increased; when the output voltage of the booster module reaches the above-mentioned set boost parameters, stop increasing the output voltage, and the third voltage VOUT2 is maintained at a voltage consistent with the set boost parameters.
  • the driving module may further include a Zener diode for protecting the circuit, the anode of the Zener diode is used to receive the potential between the fourth resistance unit R4 and the fifth resistance unit R5, and the cathode is used to receive the power supply voltage.
  • Driving the driving module based on the power supply voltage and the first voltage can reduce the voltage margin of the driving module, so that low-voltage devices can be used to design the driving module, which can reduce the area of the driving module, thereby reducing the overall area of the driving circuit .
  • the exemplary embodiment of the present application further provides a chip, including the driving circuit provided in the embodiment of the present application.
  • driving the driving module based on the power supply voltage and the first voltage can reduce the voltage margin of the driving module, so that low-voltage devices can be used to design the driving module, which can reduce the area of the driving module and further reduce the driving circuit.
  • the overall area reduces the area of the chip occupied by the driving circuit correspondingly, which can improve the performance of the chip.
  • the exemplary embodiment of the present application also provides an electronic device, including the driving circuit provided in the embodiment of the present application.
  • driving the driving module based on the power supply voltage and the first voltage can reduce the voltage margin of the driving module, so that low-voltage devices can be used to design the driving module, which can reduce the area of the driving module and further reduce the driving circuit.
  • the overall area can improve the performance of electronic equipment.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Logic Circuits (AREA)
  • Dc-Dc Converters (AREA)

Abstract

本申请提供一种驱动电路、芯片及电子设备，属于电子技术领域。所述驱动电路包括高压生成模块和驱动模块，所述高压生成模块的输出端与所述驱动模块连接；所述高压生成模块，用于产生第一电压，所述第一电压大于基准电位；所述驱动模块，用于基于供电电压与所述第一电压进行驱动。采用本申请，可以降低驱动模块的电压裕度，使得可以采用低压器件对驱动模块进行设计，可以减少驱动模块的面积，进而减少驱动电路整体的面积。

Description

一种驱动电路、芯片及电子设备
相关申请的交叉引用
本申请要求于2021年12月30日提交的申请号为202111682551.7的中国申请的优先权，其在此处于所有目的通过引用将其全部内容并入本文。
技术领域
本申请涉及电子技术领域，尤其涉及一种驱动电路、芯片及电子设备。
背景技术
在一些应用场景中，电子电路需要在高压环境下驱动，这类电路可以被称为高压驱动电路。
如果高压驱动电路采用低压器件，在高压环境下低压器件可能会被击穿，则不能正常使用。因此，传统的高压驱动电路一般会采用高压器件进行设计。
但是，高压器件的面积较大，不利于节约成本。
发明内容
为了解决现有技术的问题，本申请实施例提供了一种驱动电路、芯片及电子设备，可以在高压驱动的条件下采用低压器件进行设计，减小驱动电路的面积。技术方案如下：
根据本申请的一方面，提供了一种驱动电路，所述驱动电路包括高压生成模块和驱动模块，所述高压生成模块的输出端与所述驱动模块连接；
所述高压生成模块，用于产生第一电压，所述第一电压大于基准电位；
所述驱动模块，用于接收所述第一电压，并基于供电电压与所述第一电压进行驱动。
根据本申请的另一方面，提供了一种芯片，包括上述驱动电路。
根据本申请的另一方面，提供了一种电子设备，包括上述驱动电路。本申请实施例中，驱动电路可以包括高压生成模块，用于生成高于基准电位的第一电压，并将第一电压作为基准电位，与供电电压一起驱动上述驱动模块。由于基于供电电压与第一电压对驱动模块进行驱动，降低了驱动模块的电压裕度，使得可以采用低压器件对驱动模块进行设计，可以减少驱动模块的面积，进而减少驱动电路整体的面积。
附图说明
在下面结合附图对于示例性实施例的描述中，本申请的更多细节、特征和优点被公开，在附图中：
图1示出了根据本申请示例性实施例提供的驱动电路示意图；
图2示出了根据本申请示例性实施例提供的高压生成模块示意图；
图3示出了根据本申请示例性实施例提供的稳压模块示意图；
图4示出了根据本申请示例性实施例提供的输出模块示意图；
图5示出了根据本申请示例性实施例提供的输出模块示意图；
图6示出了根据本申请示例性实施例提供的输出模块示意图；
图7示出了根据本申请示例性实施例提供的高压生成模块示意图；
图8示出了根据本申请示例性实施例提供的驱动模块示意图；
图9示出了根据本申请示例性实施例提供的驱动模块示意图；
图10示出了根据本申请示例性实施例提供的运放模块示意图；
图11示出了根据本申请示例性实施例提供的控制模块示意图；
图12示出了根据本申请示例性实施例提供的电阻单元示意图；
图13示出了根据本申请示例性实施例提供的驱动电路示意图。
具体实施方式
下面将参照附图更详细地描述本申请的实施例。虽然附图中显示了本申请的某些实施例，然而应当理解的是，本申请可以通过各种形式来实现，而且不应该被解释为限于这里阐述的实施例，相反提供这些实施例是为了更加透彻和完整地理解本申请。应当理解的是，本申请的附图及实施例仅用于示例性作用，并非用于限制本申请的保护范围。
本文使用的术语“包括”及其变形是开放性包括，即“包括但不限于”。术语“基于”是“至少部分地基于”。术语“一个实施例”表示“至少一个实施例”；术语“另一实施例”表示“至少一个另外的实施例”；术语“一些实施例”表示“至少一些实施例”。其他术语的相关定义将在下文描述中给出。需要注意，本申请中提及的“第一”、“第二”等概念仅用于对不同的装置、模块或单元进行区分，并非用于限定这些装置、模块或单元所执行的功能的顺序或者相互依存关系。
需要注意，本申请中提及的“一个”、“多个”的修饰是示意性而非限制性的，本领域技术人员应当理解，除非在上下文另有明确指出，否则应该理解为“一个或多个”。
本申请实施方式中的多个装置之间所交互的消息或者信息的名称仅用于说明性的目的， 而并不是用于对这些消息或信息的范围进行限制。
本申请实施例提供了一种驱动电路，该驱动电路可以集成在芯片中，或者设置在电子设备中。
参照图1所示的驱动电路示意图，该驱动电路可以包括高压生成模块和驱动模块，高压生成模块的输出端与驱动模块连接。
高压生成模块，可以用于产生第一电压；
驱动模块，可以用于接收第一电压，基于供电电压与第一电压进行驱动。
其中，第一电压大于基准电位，基准电位可以是指零电位或系统基准电位，是芯片或者电子设备中设定的电位参考点。供电电压可以是指电源电压或电池电压，还可以是其他电路输出的用于供电的电压，本实施例对此不作限定。
在一种可能的实施方式中，当驱动电路上电时，可以基于供电电压和基准电位对整个驱动电路进行驱动。
在高压生成模块中，可以基于供电电压和基准电位产生上述第一电压。并将高压生成模块产生的第一电压作为驱动模块的电位参考点，基于供电电压与第一电压驱动上述驱动模块，使得驱动模块可以正常工作。
由于基准电位通常为零电位或趋近于零电位，属于低压，在电路中接收基准电位通常称为“接地”，本申请在驱动模块中采用第一电压实现原“接地*的功能，因此可以将上述第一电压称为“高压地”。
可选的，参照图2所示的高压生成模块示意图，高压生成模块可以包括稳压模块和输出模块，稳压模块的输出端与输出模块连接。
稳压模块，可以用于输出第二电压；
输出模块，可以用于基于供电电压和第二电压，输出第一电压。
可选的，稳压模块可以包括齐纳二极管，基于齐纳二极管进行稳压。
在一种具体的实施方式中，参照图3所示的稳压模块示意图，稳压模块可以包括一个电阻、一个齐纳二极管和一个电流源，齐纳二极管的正极与电流源连接，负极接入供电电压；电阻设置在齐纳二极管的正负极之间，与齐纳二极管并联；电流源一端与齐纳二极管连接，另一端接地，与齐纳二极管串联。输出的第二电压为齐纳二极管的负极处的电压。
驱动电路初始化后，齐纳二极管反向击穿进行稳压，设为Vd，也即是齐纳二极管两端或电阻两端的电压为Vd。若供电电压为电池电压VBAT，则稳压模块输出的第二电压可以为VBAT-Vd。
当然，稳压模块还可以采用其他具体的电路，例如上述电流源可以替换为电阻，能够 产生稳定的电压即可，本实施例对稳压模块的具体电路结构不作限定。
可选的，输出模块可以包括第一场效应管M1，第一场效应管M1的控制端用于接收第二电压，输出端用于输出第一电压。其中，第一场效应管M1的控制端为栅极，输入端为源极/漏极，输出端为漏极/源极。
参照图4所示的输出模块示意图，第一场效应管M1可以是NMOS(N-Metal-Oxide-Semiconductor，N型金属-氧化物-半导体)管，控制端的电压(即NMOS管的栅极电压)为上述第二电压，输出端的电压(即NMOS管的源极电压)为第一电压，输入端(即NMOS管的漏极)为高阻态，此时，第一电压可以为第二电压与阈值电压之和，该阈值电压是指第一场效应管处于临界导通状态时输出端与控制端之间的电压。当上述图3所示的稳压模块与图4所示的输出模块相结合时，令第一电压为H_AGND，第二电压为VBAT-Vd，则H_AGND＝VBAT-Vd+VTH，其中，VTH即为上述阈值电压。
当然，第一场效应管M1也可以是PMOS(P-Metal-Oxide-Semiconductor，P型金属-氧化物-半导体)管，本实施例对第一场效应管M1的具体类型不作限定。
可选的，输出模块还可以包括开关单元，开关单元的一端与第一场效应管M1的输入端连接，另一端用于接收基准电位。
开关单元可以用于控制高压生成模块输出的电压。参照图5所示的输出模块示意图，第一场效应管M1处于导通状态，当开关单元导通时，高压生成模块输出的第一电压为基准电位，也即是说，此时的高压生成模块未产生高压地；当开关单元关断时，第一场效应管M1的输入端处于高阻态，高压生成模块可以产生高压地。
可选的，开关单元可以包括第二场效应管M2，第二场效应管M2的控制端用于接收开关控制信号，输出端与第一场效应管M1的输入端连接，输入端用于接收基准电位。其中，第二场效应管M2的控制端为栅极，输入端为源极/漏极，输出端为漏极/源极。
参照图6所示的输出模块示意图，第二场效应管M2可以是PMOS管。当开关控制信号为高电平时，第二场效应管M2关断，也即是开关单元关断；当开关控制信号为低电平时，第二场效应管M2导通，也即是开关单元导通。
当然，第二场效应管M2也可以是NMOS管，本实施例对第二场效应管M2的具体类型不作限定。或者，开关单元还可以是其他的开关电路，本实施例对开关单元的具体电路结构也不作限定。
可选的，驱动模块可以包括多个子驱动模块，各子驱动模块的接地端分别用于接收上述第一电压。子驱动模块可以由驱动模块中的任意部分电路构成，本实施例对子驱动模块的具体电路结构不作限定。
可选的，驱动电路包括多个高压生成模块，每个高压生成模块分别与一个或多个子驱 动模块连接，以向各子驱动模块输入第一电压。高压生成模块可承受的电流有限，因此可以设置多个并联的高压生成模块分担电流，保证电路性能。
在一种可能的实施方式中，由于影响承受电流的器件主要是场效应管，可以复用稳压模块为多个并联的输出模块提供第二电压，每个输出模块分别输出上述第一电压，在包括多个高压生成模块的情况下尽可能减小面积。参照图7所示的高压生成模块示意图，稳压模块可以与多个输出模块串联，多个输出模块之间并联，稳压模块与一个输出模块构成的电路称为一个高压生成模块。
可选的，上述驱动电路可以是指升压电路，用于实现升压功能，此时，驱动模块还可以用于基于供电电压输出第三电压。
其中，第三电压大于供电电压，可以是指升压后输出的电压。也即是，驱动模块可以对供电电压进行升压，输出升压后的电压。
可选的，参照图8所示的驱动模块示意图，驱动模块可以包括运放模块和增压模块，运放模块的输出端与增压模块连接。
运放模块，可以用于基于供电电压，输出第四电压；
增压模块，用于基于第四电压，输出符合设定升压参数的第三电压。
在一种可能的实施方式中，增压模块所需的输入电压不一定等于供电电压，因此可以采用运放模块将供电电压作为输入，并将供电电压进行调整，输出第四电压。进而，将第四电压作为增压模块的输入电压，增压模块可以增加输出的电压，直到达到设定升压参数，此时输出的电压即为上述第三电压。
可选的，参照图9所示的驱动模块示意图，增压模块可以包括控制模块，控制模块可以用于基于增压模块的反馈电压、第四电压和供电电压，输出启动控制信号，该启动控制信号用于控制增压模块的工作状态。
在此基础上，增压模块可以被配置为当输出的电压未达到上述设定升压参数时，增加输出的电压；当输出的电压达到上述设定升压参数时，停止增加输出的电压。并且，还可以将输出的电压保持为上述第三电压，即在达到设定升压参数后保持在该升压参数上。
可选的，运放模块可以包括电流源单元、第一电阻单元R1、第二电阻单元R2和第三电阻单元R3，控制模块可以包括第四电阻单元R4和第五电阻单元R5，并且可以通过上述单元使得第三电压符合设定升压参数。
其中，电流源单元的电流值可以是参考电流值，也可以是其他恒定的电流值，本实施例对此不作限定。
一种具体的实施方式可参照图10所示的运放模块示意图。在运算放大器的输入端一侧，第一电阻单元R1和电流源单元串联。第一电阻单元R1的一端用于接收供电电压，另一端 与电流源单元的一端连接，电流源单元的另一端用于接收基准电位，电路上电后，第一电阻单元R1和电流源单元可以形成通路。运算放大器的同相输入端用于接收第一电阻单元R1和电流源单元之间的电位。
在运算放大器的输出端一侧，第二电阻单元R2、第三电阻单元R3和第三场效应管M3串联。第二电阻单元R2的一端用于接收供电电压，另一端与第三电阻单元R3的一端连接，第三电阻单元R3的另一端与第三场效应管M3的输出端连接，第三场效应管M3的输入端用于接收上述第一电压，即接收高压地，控制端与运算放大器的输出端连接。运算放大器的反相输入端用于接收第二电阻单元R2和第三电阻单元R3之间的电位。运放模块输出的第四电压为上述第三电阻单元R3的另一端的电位。其中，第三场效应管M3的控制端为栅极，输入端为源极/漏极，输出端为漏极/源极。
设电流源单元的电流值为IREF，第四电压为VOUT1，供电电压为VBAT，则电路上电后，基于运算放大器虚短虚断的原理，可以得到第四电压VOUT1＝VBAT-IREF*R1*(R2+R3)/R2。
一种具体的实施方式可参照图11所示的控制模块示意图。控制模块可以包括第四电阻单元R4、第五电阻单元R5和比较单元，增压模块中其余用于实现增压的部分可以称为增压单元。比较单元包括两个输入端和一个输出端，两个输入端分别为第一输入端和第二输入端，比较器用于比较第一输入端和第二输入端的电压大小，如果第一输入端的电压大于第二输入端的电压，则输出端可以输出第一电平，如果第一输入端的电压小于第二输入端的电压，则输出端可以输出第二电平。可选的，第一电平为高电平，第二电平为低电平；或者，第一电平为低电平，第二电平为高电平。
第四电阻单元R4的一端用于接收上述第四电压，另一端与第五电阻单元R5连接，第五电阻单元R5的另一端用于接收增压模块输出的反馈电压。比较单元的第一输入端用于接收供电电压，第二输入端用于接收第四电阻单元R4和第五电阻单元R5之间的电位，输出端与增压单元连接。
设第四电阻单元R4和第五电阻单元R5连接节点处的电压为Vq，供电电压为VBAT。当增压模块输出的电压未达到设定升压参数时，比较单元的第二输入端的电压Vq小于第一输入端的电压(即供电电压VBAT)，则比较单元可以输出第一电平，作为启动控制信号，控制增压单元启动，实现增加电压的功能。当增压模块输出的电压达到设定升压参数时，比较单元的第二输入端的电压Vq增大至大于第一输入端的电压(即供电电压VBAT)，则比较单元的状态翻转，可以输出第二电平，控制增压单元停止增加电压。
其中，一种具体的增压单元可以基于振荡电路和电荷泵单元构成，可以采用现有的电路结构实现，本实施例对增压单元的具体电路结构不作限定。
设第四电压为VOUT1，第三电压为VOUT2，则在增压模块输出的电压达到设定升压参数时，即环路稳定时，Vq＝VBAT，根据欧姆定律可得(VOUT2-VBAT)/R5＝(VBAT-VOUT1)/R4，整理可得VOUT1＝VBAT-(VOUT2-VBAT)*R4/R5。
令运放模块中得到的VOUT1的表达式，与增压模块中得到的VOUT1的表达式相等，进一步整理可得VOUT2-VBAT＝IREF*R1*R5(R2+R3)/(R2*R4)。VOUT2-VBAT即为设定升压参数，“设定”是指可以对上述第一电阻单元R1到第五电阻单元R5的电阻值进行设计，还可以对电流源单元的电流值进行设计，进而达到控制升压参数的效果。
上文介绍的电阻单元可以是一个电阻元件，也可以多个电阻元件的组合。可选的，第一电阻单元R1、第二电阻单元R2、第三电阻单元R3、第四电阻单元R4和第五电阻单元R5的电阻值可变。如图12所示，上述任一电阻单元可以是多个电阻元件的组合，可以通过逻辑控制接入电路的电阻值，本实施例对电阻单元的具体结构不作限定。
可选的，第二电阻单元R2和第三电阻单元R3的电阻值相等，即上述R2＝R3。在此基础上，上述VOUT2-VBAT可以等于2*IREF*R1*R5/R4，因此，至少可以通过电流源单元、第一电阻单元R1、第四电阻单元R4和第五电阻单元R5来对升压参数进行设计，减小设计难度。
可选的，上面的介绍可以是指一个增压通道的实现方式，增压模块可以包括多个增压通道，每个增压通道的原理相同，此处不再赘述。每个增压通道可以分别输出对应的第三电压，每两个增压通道之间的设定升压参数相同或不同。也即是说，如果需要得到升压参数不同的增压通道，则可以通过对每个增压通道的第四电阻单元R4和第五电阻单元R5进行设计，以得到不同的升压参数。
并且，在存在多个增压通道时，可以包括以下多种情况：第一，每个增压通道的设定升压参数均相同；第二，每个增压通道的设定升压参数均不同；第三，存在部分增压通道的设定升压参数相同，部分增压通道的设定升压参数不同。本实施例对增压通道的设定升压参数不作限定。
图13示出了一种具体的驱动电路，其中，OP为上述运放模块中的运算放大器，CMP为上述比较单元，OSC为上述增压单元中的振荡电路，CHP为上述增压单元中的电荷泵单元，EN为上述启动控制信号，CLK为时钟控制信号，H_AGND和H_CHP_AGND为上述第一电压(即高压地)。可以将高压生成模块生成的高压地输入运放模块和增压模块中的接地端，在供电电压和高压地的驱动下，运放模块基于供电电压生成第四电压VOUT1，控制模块可以基于增压模块的反馈电压、第四电压VOUT1和供电电压，来实现判断增压模块的输出电压是否达到设定升压参数，并控制增压模块是否增加电压。当增压模块的输出电压未达到上述设定升压参数时，可以增加输出的电压；当增压模块的输出电压达到上述设定 升压参数时，停止增加输出的电压，并将第三电压VOUT2保持在符合设定升压参数的电压上。可选的，驱动模块还可以包括用于保护电路的齐纳二极管，该齐纳二极管的正极用于接收第四电阻单元R4和第五电阻单元R5之间的电位，负极用于接收供电电压。
本申请实施例可以获得如下有益效果：
(1)基于供电电压与第一电压对驱动模块进行驱动，可以降低驱动模块的电压裕度，使得可以采用低压器件对驱动模块进行设计，可以减少驱动模块的面积，进而减少驱动电路整体的面积。
(2)采用本申请提供的电路结构，可以至少通过三个电阻单元的电阻值进行设计，实现对升压参数的控制，同时降低设计难度。
本申请示例性实施例还提供一种芯片，包括本申请实施例提供的驱动电路。本申请实施例中，基于供电电压与第一电压对驱动模块进行驱动，可以降低驱动模块的电压裕度，使得可以采用低压器件对驱动模块进行设计，可以减少驱动模块的面积，进而减少驱动电路整体的面积，使得驱动电路占用芯片的面积相应减少，可以提高芯片性能。
本申请示例性实施例还提供一种电子设备，包括本申请实施例提供的驱动电路。本申请实施例中，基于供电电压与第一电压对驱动模块进行驱动，可以降低驱动模块的电压裕度，使得可以采用低压器件对驱动模块进行设计，可以减少驱动模块的面积，进而减少驱动电路整体的面积，可以提高电子设备性能。

Claims (18)

  1. 一种驱动电路，其中，所述驱动电路包括高压生成模块和驱动模块，所述高压生成模块的输出端与所述驱动模块连接；
    所述高压生成模块，用于产生第一电压，所述第一电压大于基准电位；
    所述驱动模块，用于接收所述第一电压，并基于供电电压与所述第一电压进行驱动。
  2. 根据权利要求1所述的驱动电路，其中，所述高压生成模块包括稳压模块和输出模块，所述稳压模块的输出端与所述输出模块连接；
    所述稳压模块，用于输出第二电压；
    所述输出模块，用于基于所述供电电压和所述第二电压，输出所述第一电压。
  3. 根据权利要求2所述的驱动电路，其中，所述稳压模块包括齐纳二极管。
  4. 根据权利要求3所述的驱动电路，其中，所述输出模块包括第一场效应管，所述第一场效应管的控制端用于接收所述第二电压，输出端用于输出所述第一电压。
  5. 根据权利要求4所述的驱动电路，其中，所述输出模块还包括开关单元，所述开关单元的一端与所述第一场效应管的输入端连接，另一端用于接收所述基准电位。
  6. 根据权利要求5所述的驱动电路，其中，所述开关单元包括第二场效应管，所述第二场效应管的控制端用于接收开关控制信号，输出端与所述第一场效应管的输入端连接，输入端用于接收所述基准电位。
  7. 根据权利要求1-6任一项所述的驱动电路，其中，所述驱动模块包括多个子驱动模块，各所述子驱动模块的接地端分别用于接收所述第一电压。
  8. 根据权利要求7所述的驱动电路，其中，所述驱动电路包括多个高压生成模块，每个高压生成模块分别与一个或多个所述子驱动模块连接，以向所述子驱动模块输入所述第一电压。
  9. 根据权利要求1所述的驱动电路，其中，所述驱动模块，还用于基于所述供电电压输出第三电压，所述第三电压大于所述供电电压。
  10. 根据权利要求9所述的驱动电路，其中，所述驱动模块包括运放模块和增压模块，所述运放模块的输出端与所述增压模块连接；
    所述运放模块，用于基于所述供电电压，输出第四电压；
    所述增压模块，用于基于所述第四电压，输出符合设定升压参数的第三电压。
  11. 根据权利要求10所述的驱动电路，其中，所述增压模块包括控制模块；
    所述控制模块，用于基于所述增压模块的反馈电压、所述第四电压和所述供电电压，输出启动控制信号，所述启动控制信号用于控制所述增压模块的工作状态。
  12. 根据权利要求11所述的驱动电路，其中，所述增压模块，被配置为当输出的电压未达到所述升压参数时，基于所述启动控制信号，增加输出的电压；当输出的电压达到所述升压参数时，基于所述启动控制信号，停止增加输出的电压，并将输出的电压保持为所述第三电压。
  13. 根据权利要求11所述的驱动电路，其中，所述运放模块包括电流源单元、第一电阻单元、第二电阻单元和第三电阻单元，所述控制模块包括第四电阻单元和第五电阻单元，所述设定升压参数至少基于所述电流源单元、所述第一电阻单元、所述第四电阻单元和所述第五电阻单元得到。
  14. 根据权利要求13所述的驱动电路，其中，所述第一电阻单元、所述第二电阻单元、所述第三电阻单元、所述第四电阻单元和所述第五电阻单元中至少一者的电阻值可变。
  15. 根据权利要求13所述的驱动电路，其中，所述第二电阻单元和所述第三电阻单元的电阻值相等。
  16. 根据权利要求10所述的驱动电路，其中，所述增压模块包括多个增压通道，每个增压通道分别输出对应的第三电压，每两个增压通道之间的所述设定升压参数相同或不同。
  17. 一种芯片，其中，包括如权利要求1-16中任一项所述的驱动电路。
  18. 一种电子设备，其中，包括如权利要求1-16中任一项所述的驱动电路。
PCT/CN2022/142272 2021-12-30 2022-12-27 一种驱动电路、芯片及电子设备 WO2023125517A1 (zh)

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