WO2023120189A1 - 情報処理方法、情報処理装置及び記憶媒体 - Google Patents

情報処理方法、情報処理装置及び記憶媒体 Download PDF

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Publication number
WO2023120189A1
WO2023120189A1 PCT/JP2022/045083 JP2022045083W WO2023120189A1 WO 2023120189 A1 WO2023120189 A1 WO 2023120189A1 JP 2022045083 W JP2022045083 W JP 2022045083W WO 2023120189 A1 WO2023120189 A1 WO 2023120189A1
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Prior art keywords
unevenness
distribution
wafer
information processing
specific
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PCT/JP2022/045083
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English (en)
French (fr)
Japanese (ja)
Inventor
修児 岩永
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to KR1020247024477A priority Critical patent/KR20240125648A/ko
Priority to CN202280082624.5A priority patent/CN118382918A/zh
Priority to US18/718,559 priority patent/US20250045906A1/en
Priority to JP2023569285A priority patent/JP7720924B2/ja
Publication of WO2023120189A1 publication Critical patent/WO2023120189A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/40—Extraction of image or video features
    • G06V10/44—Local feature extraction by analysis of parts of the pattern, e.g. by detecting edges, contours, loops, corners, strokes or intersections; Connectivity analysis, e.g. of connected components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T5/00—Image enhancement or restoration
    • G06T5/40—Image enhancement or restoration using histogram techniques
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/0008—Industrial image inspection checking presence/absence
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/40—Extraction of image or video features
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/40—Extraction of image or video features
    • G06V10/60—Extraction of image or video features relating to illumination properties, e.g. using a reflectance or lighting model
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20081—Training; Learning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Definitions

  • the present disclosure relates to an information processing method, an information processing device, and a storage medium.
  • An apparatus for analyzing defects in a substrate disclosed in Patent Document 1 includes an imaging unit that captures an image of a substrate to be inspected, and a defect feature amount that extracts a feature amount of a defect in the substrate surface based on the captured image of the substrate. and an extraction unit, and a defect feature amount integration unit that integrates the defect feature amounts for the plurality of substrates.
  • the apparatus also has a defect determination unit that determines whether or not the integrated defect feature amount exceeds a predetermined threshold value, and an output unit that outputs the determination result of the defect determination unit.
  • the technology according to the present disclosure enables accurate inspection based on the captured image even when unevenness occurs in the captured image of the board.
  • One aspect of the present disclosure is an information processing method for processing information for inspecting a board based on a captured image of the board, the process comprising: acquiring the captured image of the board; creating a two-dimensional histogram whose axes are the distance from the center of the image and the luminance value; The method includes a step of extracting a distribution of unevenness, and a step of obtaining a characteristic quantity of the extracted specific unevenness distribution and determining a type of the specific unevenness distribution based on the characteristic quantity.
  • FIG. 1 is an explanatory diagram showing an outline of an internal configuration of a wafer processing system as a substrate processing system including a control device as an information processing device according to this embodiment;
  • FIG. It is a figure which shows the outline of the internal structure of the front side of a wafer processing system. It is a figure which shows the outline of the internal structure of the back side of a wafer processing system.
  • 1 is a cross-sectional view showing the outline of the configuration of an imaging device for inspection;
  • FIG. 1 is a vertical cross-sectional view showing the outline of the configuration of an imaging device for inspection;
  • FIG. 3 is a functional block diagram of a control device for inspection in the wafer processing system;
  • 4 is a diagram showing an example of a captured image of a wafer W;
  • FIG. 4 is a diagram showing an example of a captured image of a wafer W; FIG. It is a figure which shows an example of a two-dimensional histogram. It is a figure which shows an example of luminance value distribution. It is a figure which shows an example of specific nonuniformity distribution.
  • 4 is a flow chart showing a flow of a method for registering a specific unevenness distribution in the database 210 prior to information processing based on imaging results of a wafer; 5 is a flow chart showing the flow of information processing for wafer inspection, including information processing based on the imaging result of the wafer W by the imaging device for inspection.
  • a resist coating process of coating a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer") with a resist solution to form a resist film an exposure process of exposing the resist film, and an exposure process of exposing the resist film.
  • a developing process for developing the resist film and the like are sequentially performed to form a resist pattern on the substrate.
  • the etching target layer is etched using the resist pattern as a mask, and a predetermined pattern is formed in the etching target layer.
  • a film other than the resist film may be formed under the resist film.
  • inspection such as defect inspection may be performed on the substrate.
  • defect inspection for example, it is inspected whether or not the resist pattern is properly formed, and whether or not there is foreign matter attached to the substrate.
  • an image obtained by imaging the surface of a substrate is used for inspection such as defect inspection.
  • the captured image of the substrate is affected by the state of the underlying layer, that is, the layer located below the outermost layer of the substrate, even if the substrate is in a normal state, color unevenness, that is, brightness unevenness may occur. There is Depending on the inspection method, such unevenness may be determined as abnormal, and inspection may not be performed accurately. In other words, it may not be possible to appropriately determine whether the unevenness in the captured image of the substrate is unevenness caused by an abnormality in the substrate or unevenness in the normal range that does not pose a problem in terms of process performance.
  • the technology according to the present disclosure is for accurately performing an inspection based on the captured image even when unevenness occurs in the captured image of the board.
  • FIG. 1 is an explanatory diagram showing the outline of the internal configuration of a wafer processing system as a substrate processing system, which includes a control device as an information processing device according to this embodiment.
  • 2 and 3 are diagrams schematically showing the internal configuration of the front side and rear side of the wafer processing system 1, respectively.
  • the wafer processing system 1 is a coating and developing system that performs photolithography on a wafer W as a substrate.
  • the wafer processing system 1 includes, for example, a cassette station 2 for loading/unloading a cassette C to/from the outside, and a processing station 3 equipped with various processing devices for performing predetermined processing on wafers W. and have A wafer processing system 1 has a configuration in which a cassette station 2, a processing station 3, and an interface station 5 for transferring wafers W between an exposure apparatus 4 adjacent to the processing station 3 are integrally connected. there is The wafer processing system 1 also has a controller 6 that controls the wafer processing system 1 .
  • the cassette station 2 is divided into, for example, a cassette loading/unloading section 10 and a wafer transfer section 11 .
  • the cassette loading/unloading unit 10 is provided at the end of the wafer processing system 1 on the Y-direction negative side (left side in FIG. 1).
  • a cassette mounting table 12 is provided in the cassette loading/unloading section 10 .
  • a plurality of, for example, four mounting plates 13 are provided on the cassette mounting table 12 .
  • the mounting plates 13 are arranged in a row in the horizontal X direction (vertical direction in FIG. 1).
  • the cassette C can be placed on these mounting plates 13 when the cassette C is carried in and out of the wafer processing system 1 .
  • the wafer transfer unit 11 is provided with a wafer transfer device 21 that is movable on a transfer path 20 extending in the X direction (vertical direction in FIG. 1).
  • the wafer transfer device 21 is movable in the vertical direction and around the vertical axis (.theta. direction), and moves between the cassette C on each mounting plate 13 and the transfer device in the third block G3 of the processing station 3, which will be described later.
  • a wafer W can be transported between them.
  • the processing station 3 is provided with a plurality of, for example, four blocks G1, G2, G3, and G4 equipped with various devices.
  • a first block G1 is provided on the front side of the processing station 3 (negative side in the X direction in FIG. 1), and a second block G1 is provided on the back side of the processing station 3 (positive side in the X direction in FIG. 1).
  • G2 is provided.
  • a third block G3 is provided on the cassette station 2 side of the processing station 3 (negative side in the Y direction in FIG. 1), and a third block G3 is provided on the interface station 5 side of the processing station 3 (positive side in the Y direction in FIG. 1).
  • a fourth block G4 is provided.
  • a plurality of liquid processing devices are arranged in the first block G1, as shown in FIG. Specifically, in the first block G1, for example, a developing device 30, a lower antireflection film forming device 31, a resist coating device 32, and an upper antireflection film forming device 33 are arranged in this order from the bottom.
  • the development processing device 30 develops the wafer W.
  • the lower antireflection film forming apparatus 31 forms an antireflection film (hereinafter referred to as “lower antireflection film”) on the wafer W under the resist film.
  • the resist coating device 32 coats the wafer W with a resist liquid to form a resist film.
  • the upper antireflection film forming apparatus 33 forms an antireflection film (hereinafter referred to as “upper antireflection film”) on the resist film of the wafer W. As shown in FIG.
  • Each of the liquid processing apparatuses 30 to 33 of the first block G1 has a plurality of cups F1 in the horizontal direction for accommodating wafers W during processing, and can process a plurality of wafers W in parallel. Further, in the liquid processing apparatuses 30 to 33, a predetermined processing liquid is applied onto the wafer W by spin coating, for example. In the spin coating method, for example, the processing liquid is discharged onto the wafer W from a coating nozzle (not shown), and the wafer W is rotated to spread the processing liquid on the surface of the wafer W.
  • Each of the liquid processing apparatuses 30 to 33 is provided with a cup F1 and a spin chuck F2 as a rotation holding unit for holding and rotating the wafer W. As shown in FIG. Further, in the cup F1, it is possible to recover the processing liquid and the like that have been shaken off from the wafer W during rotation.
  • Peripheral exposure devices 42 for exposing a portion are arranged vertically and horizontally.
  • the number and arrangement of the heat treatment devices 40, the adhesion devices 41, and the peripheral exposure devices 42 can be arbitrarily selected.
  • a plurality of transfer devices 50, 51, 52, 53, and 54 are provided in order from the bottom, and inspection imaging devices 55, 56, and 57 are provided thereon in order from the bottom.
  • a plurality of transfer devices 60, 61, 62 are provided in order from the bottom, and imaging devices for inspection 63, 64 are provided thereon in order from the bottom.
  • a wafer transfer area R is formed in an area surrounded by the first block G1 to the fourth block G4.
  • a wafer transfer device 70 is arranged in the wafer transfer region R, for example.
  • the wafer transfer device 70 has a transfer arm 70a that is movable in, for example, the Y direction, the front-rear direction, the ⁇ direction, and the vertical direction.
  • the wafer transfer device 70 moves within the wafer transfer region R and transfers the wafer W to predetermined devices in the surrounding first block G1, second block G2, third block G3 and fourth block G4. can.
  • a plurality of wafer transfer devices 70 are arranged vertically, and the wafers W can be transferred to predetermined devices of approximately the same height in each of the blocks G1 to G4.
  • a shuttle transfer device 80 is provided for transferring the wafer W linearly between the third block G3 and the fourth block G4.
  • the shuttle transport device 80 is linearly movable, for example, in the Y direction in FIG.
  • the shuttle transfer device 80 moves in the Y direction while supporting the wafer W, and can transfer the wafer W between the transfer device 52 of the third block G3 and the transfer device 62 of the fourth block G4.
  • a wafer transfer device 90 is provided on the positive side of the third block G3 in the X direction.
  • the wafer transfer device 90 has a transfer arm 90a that is movable in, for example, the front-rear direction, the ⁇ direction, and the vertical direction.
  • the wafer transfer device 90 can move up and down while supporting the wafer W to transfer the wafer W to each transfer device in the third block G3.
  • a wafer transfer device 100 is provided in the interface station 5 .
  • the wafer transfer device 100 has a transfer arm 100a that can move, for example, in the front-rear direction, the ⁇ direction, and the vertical direction.
  • the wafer transfer device 100 can support the wafer W on, for example, a transfer arm 100a and transfer the wafer W to each transfer device and the exposure device 4 in the fourth block G4.
  • the control device 6 includes a computer having a processor such as a CPU, a memory, a communication interface, etc., and has a program storage unit (not shown).
  • the program storage unit controls the operations of the driving systems of the above-described various processing devices and transfer devices to perform predetermined actions of the wafer processing system 1, namely, application of a resist solution to the wafer W, development, heat treatment, wafer
  • a program containing commands for realizing delivery of W, imaging of the wafer W, control of each device, and the like is stored.
  • the program storage unit stores information processing for inspecting the wafer W (for example, information processing based on the imaging results of the wafer W by the inspection imaging devices 55, 56, 57, 63, and 64).
  • a program containing instructions is also stored.
  • the program storage unit contains a program that operates on the computer of the controller 6 of the wafer processing system 1 for controlling the information processing method based on the imaging results of the wafer W by the inspection imaging devices 55, 56, 57, 63, and 64. is also stored.
  • the program may be recorded in a computer-readable storage medium M and installed in the control device 6 from the storage medium M.
  • the storage medium M may be temporary or non-temporary. Also, part or all of the program may be realized by dedicated hardware (circuit board).
  • FIG. 4 and 5 are a cross-sectional view and a vertical cross-sectional view, respectively, showing an outline of the configuration of the imaging device 55 for inspection.
  • the inspection imaging device 55 has a casing 110 as shown in FIG.
  • a mounting table 120 for mounting the wafer W is provided in the casing 110 as shown in FIG.
  • the mounting table 120 can be freely rotated and stopped by a rotation drive unit 121 such as a motor.
  • a guide rail 122 is provided on the bottom surface of the casing 110 and extends from one end (negative side in the X direction in FIG. 5) to the other end side (positive side in the X direction in FIG. 5) in the casing 110 .
  • the mounting table 120 and the rotation driving section 121 are provided on the guide rail 122 and can be moved along the guide rail 122 by the driving section 123 .
  • An imaging unit 130 is provided on the side surface of the other end (positive side in the X direction in FIG. 5) inside the casing 110 .
  • a wide-angle CCD camera for example, is used for the imaging unit 130, and the number of bits of the image is, for example, 8 bits (256 gradations from 0 to 255).
  • a half mirror 131 is provided near the upper center of the casing 110 .
  • the half mirror 131 is provided at a position facing the imaging unit 130 in a state in which the mirror surface faces vertically downward and is inclined upward by 45 degrees toward the imaging unit 130 .
  • An illumination unit 132 is provided above the half mirror 131 .
  • the half mirror 131 and the lighting unit 132 are fixed to the upper surface inside the casing 110 .
  • Illumination from the illumination unit 132 passes through the half mirror 131 and is illuminated downward. Therefore, the light reflected by the object below the illumination unit 132 is further reflected by the half mirror 131 and captured by the imaging unit 130 . That is, the imaging unit 130 can capture an image of an object in the area illuminated by the illumination unit 132 . A result of imaging by the imaging unit 130 is input to the control device 6 .
  • FIG. 6 is a functional block diagram of the control device 6 regarding inspection in the wafer processing system 1.
  • FIG. 7 and 8 are diagrams showing examples of captured images of the wafer W, respectively.
  • FIG. 9 is a diagram showing an example of a two-dimensional histogram created by a creation unit, which will be described later.
  • FIG. 10 is a diagram showing an example of a luminance value distribution, which will be described later.
  • FIG. 11 is a diagram showing an example of specific unevenness distribution, which will be described later.
  • the control device 6 includes an acquisition unit 201, a creation unit 202, and an extraction unit, which are implemented by a processor such as a CPU reading and executing a program stored in a storage unit (not shown). 203 and a determination unit 204 .
  • the controller 6 has a database 210 described below.
  • the acquisition unit 201 acquires captured images of the wafer W based on the imaging results of the wafer W by the inspection imaging devices 55 , 56 , 57 , 63 , and 64 . Specifically, the acquisition unit 201 performs necessary image processing on images captured by the imaging units 130 of the inspection imaging devices 55, 56, 57, 63, and 64, for example, so that the wafer W is An image showing the entire surface of the wafer W is generated as the captured image.
  • the irregularities M2 and M3 are not necessarily caused by the state of the wafer W being abnormal.
  • the unevennesses M2 and M3 only the unevenness M2 may be caused by the state of the wafer W being abnormal.
  • a creation unit 202, an extraction unit 203, and a determination unit 204 are provided.
  • the creating unit 202 calculates the distance r from the center of the wafer W (that is, the position in the radial direction about the wafer W) and the brightness value of the captured image of the wafer W acquired by the acquiring unit 201, as shown in FIG. A two-dimensional histogram H with V as an axis is created.
  • the extraction unit 203 extracts the specific unevenness distribution D from the two-dimensional histogram H created by the creation unit 202 based on a predetermined area definition.
  • the specific unevenness distribution D is a distribution corresponding to the different unevennesses M2 and M3 in the captured image Im of the wafer W described above.
  • the extraction unit 203 acquires the luminance value distribution VD1 as shown in FIG. 10 from the two-dimensional histogram H created by the creation unit 202.
  • the luminance value distribution VD1 is a distribution obtained by projecting the two-dimensional histogram H generated by the generating unit 202 onto a two-dimensional plane having the distance (radial position) r from the center of the wafer W and the luminance value V as axes.
  • the extraction unit 203 performs binarization processing on the two-dimensional histogram H created by the creation unit 202, and obtains the luminance value distribution VD1.
  • the portion around the mode Vm of the brightness value V at each radial position of the brightness value distribution VD1 is an annular unevenness around the center of the wafer W, which occurs even when the wafer W is in a normal state. It is thought to correspond to M1 or concentric circular mura.
  • the extraction unit 203 performs an inversion process on the luminance value distribution VD1 in the luminance value axis direction, using the mode of the luminance value as a reference. For example, as shown in FIG. 11, the extraction unit 203 performs inversion processing on the luminance value distribution VD1 about the axis P indicating the mode of the luminance value in the luminance value distribution VD1, and performs the inversion processing on the luminance value distribution VD1.
  • a luminance value distribution VD2 is acquired.
  • a portion VD3 where the brightness value distribution VD1 before the reversing process and the brightness value distribution VD2 after the reversing process overlap is centered around the center of the wafer W, which occurs even when the wafer W is in a normal state. It is considered to correspond to annular mura M1 or concentric mura. Therefore, the portion VD3 where the luminance value distribution VD1 before the inversion processing and the luminance value distribution VD2 after the inversion processing overlap is not particularly necessary for inspection. Parts VD4 and VD5 that do not overlap with the subsequent luminance value distribution VD2 are extracted as the specific unevenness distribution D.
  • the extraction unit 203 extracts, as the specific unevenness distribution D, portions VD4 and VD5 of the luminance value distribution VD1 before the inversion processing that do not overlap with the luminance value distribution VD2 after the inversion processing.
  • the extracting unit 203 extracts the mode of the luminance value in each divided area obtained by dividing the luminance value distribution VD1 in the radial direction of the wafer W (distance direction from the center of the wafer W). may be used as a reference to perform inversion processing in the direction of the luminance value axis.
  • the determination unit 204 acquires a feature amount of the specific unevenness distribution D extracted by the extraction unit 203 (hereinafter, the specific unevenness distribution D extracted by the extraction unit 203 may be referred to as an extracted unevenness distribution De), and obtains the feature amount.
  • the type of the extracted unevenness distribution De is determined based on. Specifically, the determination unit 204 determines whether the extracted unevenness distribution De is normal unevenness when the state of the wafer W is normal, or abnormal unevenness when the state of the wafer W is abnormal. Determine if compatible. Abnormal unevenness is, for example, unevenness caused by defects.
  • the feature amount of the specific unevenness distribution D is specifically a feature amount related to the shape of the specific unevenness distribution D.
  • FIG. The feature amounts relating to the shape of the specific unevenness distribution D are, for example, (A) to (I) below.
  • E the specific unevenness distribution D width (F) in the direction of the brightness value axis, the width in the radial direction of the specific unevenness distribution D
  • G Average luminance value of specific unevenness distribution D
  • the determination unit 204 refers to the database 210 and determines the type of the extracted unevenness distribution De.
  • the database 210 for each specific unevenness distribution D extracted from the captured image of the wafer W in the past, whether the specific unevenness distribution D corresponds to normal unevenness or abnormal unevenness is stored in advance (that is, registered). ).
  • the specific unevenness distribution D pre-stored in the database 210 may be referred to as a registered unevenness distribution Dr.
  • the database 210 stores, for example, the feature amount of the registered unevenness distribution Dr for each registered unevenness distribution Dr.
  • the determination unit 204 identifies the registered unevenness distribution Dr that is most similar to the extracted unevenness distribution De based on the feature amount. For example, the determining unit 204 refers to the database 210, calculates the degree of similarity to the extracted unevenness distribution De for each registered unevenness distribution Dr based on the feature amount, and specifies the registered unevenness distribution Dr with the highest similarity.
  • the feature amount used for calculating the degree of similarity for example, any one or more of the feature amounts (A) to (I) relating to the shape of the specific unevenness distribution D described above are used. Further, for calculating similarity, for example, Euclidean distance, Mahalanobis distance, Manhattan distance, Minkowski distance, and cosine similarity are used.
  • the determination unit 204 determines whether the registered unevenness distribution Dr that is most similar to the extracted unevenness distribution De (that is, has the highest degree of similarity) corresponds to normal unevenness or abnormal unevenness, which is registered in the database 210. to determine whether the extracted unevenness distribution De corresponds to normal unevenness or abnormal unevenness.
  • the determining unit 204 determines that the extracted unevenness distribution De corresponds to normal unevenness.
  • the determining unit 204 determines that the extracted unevenness distribution De corresponds to abnormal unevenness.
  • the control device 6 may further include a registration unit 205 implemented by a processor such as a CPU reading and executing a program stored in a storage unit (not shown).
  • a registration unit 205 registers the determination result by the determination unit 204 in the database 210 .
  • the registration unit 205 stores the specific unevenness distribution D extracted by the extracting unit 203 as the feature amount extracted by the determination unit 204 from the specific unevenness distribution D and the determination result of the determination unit 204 for the specific unevenness distribution D. Together, it is stored in the database 210 .
  • the determination unit 204 performs determination by referring to the database 210 in which determination results of the determination unit 204 before the previous time are registered.
  • a cassette C containing a plurality of wafers W is loaded into the cassette station 2 .
  • the wafers W in the cassette C are transferred to the inspection imaging device 55 of the third block G3.
  • the imaging unit 130 images the wafer W before forming various films such as the lower antireflection film, that is, in the initial state.
  • the imaging result is output to the control device 6 .
  • the wafer W is transferred to the lower antireflection film forming apparatus 31 of the first block G1, and a lower antireflection film is formed on the wafer W. As shown in FIG. Subsequently, the wafer W is transferred to the heat treatment apparatus 40 for the lower antireflection film of the second block G2, and the heat treatment of the lower antireflection film is performed. After that, the wafer W is transferred to the imaging device 63 for inspection. Then, the imaging unit 130 images the wafer W after the lower antireflection film is formed. The imaging result is output to the control device 6 .
  • the wafer W is transferred to the resist coating device 32 of the first block G1, and a resist film is formed on the lower antireflection film of the wafer W. As shown in FIG. Subsequently, the wafer W is transferred to the heat treatment apparatus 40 for PAB processing in the second block G2, and the PAB processing is performed. After that, the wafer W is transferred to the imaging device 56 for inspection. Then, the imaging unit 130 images the wafer W after the formation of the resist film. The imaging result is output to the control device 6 .
  • the wafer W is transferred to the upper antireflection film forming apparatus 33 of the first block G1, and the upper antireflection film is formed on the resist film of the wafer W. As shown in FIG. Subsequently, the wafer W is transferred to the heat treatment apparatus 40 for the upper antireflection film in the second block G2, and heat treatment of the upper antireflection film is performed. After that, the wafer W is transferred to the imaging device 64 for inspection. Then, the imaging unit 130 images the wafer W after the upper antireflection film is formed. The imaging result is output to the control device 6 .
  • the wafer W is then transported to the exposure device 4 and exposed to a desired pattern. Subsequently, the wafer W is transported to the heat treatment apparatus 40 for PEB processing in the second block G2, and PEB processing is performed thereon. Next, the wafer is transported to the development processing device 30 of the first block G1, development processing is performed, and a resist pattern is formed on the wafer W concerned. After that, the wafer W is transferred to the imaging device 57 for inspection. Then, the imaging unit 130 images the wafer W after forming the resist pattern. The imaging result is output to the control device 6 .
  • the wafer W is returned to the cassette C, completing a series of wafer processing. After that, the wafer processing described above is performed for other wafers W as well.
  • FIG. 12 is a flow chart showing the flow of a method for registering the specific unevenness distribution D in the database 210 in advance of information processing based on the imaging results.
  • the registration of the specific unevenness distribution D in the database 210 in advance is performed using, for example, a controller (not shown) external to the wafer processing system 1 .
  • a controller not shown
  • an external control device controls the image pickup results of the wafer W by an inspection imaging device (not shown) similar to the inspection imaging devices 55, 56, 57, 63, and 64.
  • a captured image of the wafer W based on is obtained (step S1).
  • an external control device generates a two-dimensional image of the captured image of the wafer W acquired in step S1, with the distance r from the center of the wafer W and the brightness value V as axes.
  • a histogram H is created (step S2).
  • an external control device extracts the specific unevenness distribution D from the two-dimensional histogram H created in step S2 based on a predetermined area definition in the same manner as the extraction unit 203 described above (step S3). .
  • the external control device acquires the feature amount of the specific unevenness distribution D extracted in step S3 (step S4) in the same manner as the determination unit 204 described above. Then, for example, the captured image of the wafer W obtained in step S1 and the specific unevenness distribution extracted in step S3 are displayed on a display device (not shown). After that, the operator, who has confirmed the display contents of the display device, confirms whether the specific unevenness distribution extracted in step S3 corresponds to normal unevenness or abnormal unevenness through an input device such as a keyboard, mouse, or touch panel. is entered.
  • an external control device determines whether the specific unevenness distribution D extracted in step S3 is normal unevenness or abnormal unevenness. is registered in the database 210 (step S5). At this time, the external control device also registers the feature amount obtained in step S4 for the specific unevenness distribution in the database 210 in association with the specific unevenness distribution. Wafer identification information (ID), lot identification information (ID), and device identification information (ID) relating to the wafer W for which the specific unevenness distribution is obtained from the captured image may also be linked and registered in the database 210 .
  • the device identification information (ID) corresponds to the information of the lower layer film of the imaged wafer W (for example, the type of the lower layer film, the number of layers of the lower layer film, etc.).
  • the above steps S1 to S5 are performed for each of the plurality of wafers W.
  • FIG. 13 is a flow chart showing the flow of information processing for inspection of the wafer W, including information processing based on the imaging result of the wafer W by the imaging device 56 for inspection.
  • the acquisition unit 201 of the control device 6 of the wafer processing system 1 acquires the captured image of the wafer W based on the imaging result of the wafer W after the formation of the resist film by the inspection imaging device 56 (step S11).
  • the creation unit 202 of the control device 6 acquires the photographed image of the wafer W after the formation of the resist film, which is acquired by the acquisition unit 201, in two dimensions with the distance r from the center of the wafer W and the brightness value V as axes.
  • a histogram H is created (step S12).
  • a radial image may be used when the two-dimensional histogram H is created.
  • the radial image is an image in which the luminance value linearly increases or decreases radially outward from the portion corresponding to the center of the wafer W, and the luminance value of the radial image corresponds to the radial position of the wafer W. do.
  • the coordinates of the portion where the wafer W exists in the captured image of the wafer W are assumed to be a point (xn, yn).
  • the two-dimensional histogram H can be obtained.
  • the extraction unit 203 of the control device 6 extracts the specific unevenness distribution D from the two-dimensional histogram H created by the creation unit 202 based on a predetermined area definition (step S13). Specifically, for example, the extraction unit 203 acquires the aforementioned luminance value distribution VD1 from the two-dimensional histogram H created by the creation unit 202 . Further, the extraction unit 203 performs inversion processing on the luminance value distribution VD1 about the axis P indicating the mode of the luminance value in the luminance value distribution VD1, and acquires the luminance value distribution VD2 after the inversion processing. do.
  • the extraction unit 203 extracts, as the specific unevenness distribution D, a portion of the luminance value distribution VD1 before the inversion processing that does not overlap with the luminance value distribution VD2 after the inversion processing. Note that the extraction unit 203 may extract one specific unevenness distribution or a plurality of specific unevenness distributions.
  • the determination unit 204 acquires the characteristic amount of the extracted unevenness distribution De for each specific unevenness distribution D extracted by the extraction unit 203, that is, the extracted unevenness distribution De, and based on the characteristic amount, determines the type of the extracted unevenness distribution De. is determined (step S14).
  • the determination unit 204 acquires all of the aforementioned feature amounts (A) to (I) regarding the shape of the extracted unevenness distribution De for each extracted unevenness distribution De.
  • the feature amounts (A) to (I) are collectively referred to as a feature amount group.
  • the determination unit 204 extracts the specific unevenness distribution D registered in the database 210, that is, the registered unevenness distribution Dr, which is most similar to the extracted unevenness distribution De. is specified based on the feature amount group related to the shape of the extracted unevenness distribution De. For example, the determination unit 204 refers to the database 210, calculates the degree of similarity to the extracted unevenness distribution De for each registered unevenness distribution Dr based on the feature amount group, and specifies the registered unevenness distribution Dr with the highest similarity.
  • the similarity based on the similarity group for example, the Eugrid distance, the Mahalanobis distance, the Manhattan distance, or the Minkowski distance from the feature amount group related to the shape of the extracted unevenness distribution De to the feature amount group related to the shape of the registered unevenness distribution Dr. Used.
  • the similarity may be calculated for all the registered unevenness distributions Dr. However, among the registered unevenness distributions Dr, the similarity degree may be calculated for the registered unevenness distribution Dr corresponding to the wafer ID, lot ID, or device ID of the wafer W to be inspected. may be performed only.
  • the determination unit 204 determines whether the extracted unevenness distribution De is normal unevenness or abnormal unevenness based on whether the registered unevenness distribution Dr having a high degree of similarity corresponds to normal unevenness or abnormal unevenness. It is determined which of the abnormal unevenness corresponds.
  • the determination result by the determination unit 204 may be displayed on a display device (not shown) such as a liquid crystal display panel.
  • the determination unit 204 does not calculate the degree of similarity, and the extracted unevenness distribution De is regarded as an abnormal unevenness. It may be determined that it corresponds. Further, when the extracted unevenness distribution De is not continuous with the overlapping portion VD3 between the luminance value distribution VD1 before the reversing process and the luminance value distribution VD2 after the reversing process (that is, the extracted unevenness distribution De exists in isolation). case), the determination unit 204 may determine that the extracted unevenness distribution De corresponds to abnormal unevenness without calculating the degree of similarity.
  • the determination unit 204 may determine that the extracted unevenness distribution De corresponds to abnormal unevenness without calculating the degree of similarity. In these cases, it is unnecessary not only to calculate the degree of similarity but also to extract the feature amount of the extracted unevenness distribution De, but the extraction of the feature amount may be performed.
  • the registration unit 205 registers the determination result by the determination unit 204 in the database 210 (step S15). Specifically, the registration unit 205 stores the specific unevenness distribution D extracted by the extracting unit 203 as the feature amount extracted by the determination unit 204 from the specific unevenness distribution D and the determination result of the determination unit 204 for the specific unevenness distribution D. Together, it is stored in the database 210 . Furthermore, the registration unit 205 may store the wafer ID, lot ID, and device ID of the wafer W to be determined, that is, to be inspected, in the database 210 in association with the specific unevenness distribution D. FIG. If the operator confirms the determination result by the determination unit 204 and confirms that the determination result is incorrect, the determination result by the determination unit 204 is registered in the database 210 after being rewritten by the operator.
  • Information processing for inspection of the wafer W is based on the imaging results of the wafer W by the inspection imaging devices 55, 57, 63, and 64. It is similar to the information processing for inspection of the wafer W, including the information processing.
  • the information processing method is a method of processing information for inspecting a substrate based on a captured image of the substrate, and includes an acquisition step of acquiring the captured image of the substrate, and an acquired substrate and a creation step of creating a two-dimensional histogram H with axes of the distance from the center of the substrate and the luminance value for the captured image. Further, the information processing method according to the present embodiment can detect heterogeneous unevenness in the captured image (that is, non-concentric annular and non-concentric unevenness) from the two-dimensional histogram H created in the creation process based on a predetermined area definition.
  • the information processing method includes a determination step of acquiring the feature quantity of the specific unevenness distribution D extracted in the extraction step, and determining the type of the specific unevenness distribution D based on the feature quantity. include.
  • the present embodiment at least, even if the wafer W is in a normal state, it is possible to prevent the annular unevenness M1 or the concentric unevenness occurring in the captured image of the wafer W from being determined as abnormal unevenness. can do. In other words, according to the present embodiment, even if the captured image of the wafer W is uneven, the inspection based on the captured image can be performed more accurately.
  • a captured image of the wafer W is directly subjected to binarization processing, and an abnormality determination is performed for a region extracted from the binarized image.
  • a two-dimensional histogram H whose axis is the radial position r is once created from the captured image of the wafer W, and then the two-dimensional histogram H is binarized to obtain a luminance value distribution VD1.
  • the area extracted from the luminance value distribution VD1 that is, the specific unevenness distribution D is subjected to abnormality determination. Therefore, in the present embodiment, the region targeted for abnormality determination includes information on the radial position r, which is important for determination of unevenness, unlike the conventional case.
  • the target region for abnormality determination can be treated as a shape feature in consideration of the radial position r, which is important for determining unevenness. Therefore, according to this embodiment, the precision of the inspection based on the captured image of the wafer W can be improved.
  • a database is stored in which whether the specific unevenness distribution corresponds to defect-induced unevenness or normal unevenness is stored. It is determined whether the extracted unevenness distribution De corresponds to the unevenness caused by the defect or the normal unevenness. Therefore, for the extracted unevenness distribution, it can be determined more accurately whether the distribution corresponds to the unevenness caused by the defect or to the normal unevenness.
  • the luminance value distribution VD1 obtained by projecting the two-dimensional histogram H onto a predetermined two-dimensional plane is subjected to inversion processing in the luminance value axis direction with the mode of the luminance value as a reference. Then, a specific non-uniformity distribution D is extracted as a portion where the luminance value distribution VD1 before the reversal processing and the luminance value distribution VD2 after the reversal processing do not overlap. Therefore, a portion of the luminance value distribution VD1 that should not be extracted as the specific unevenness distribution D can be excluded from the specific unevenness distribution D according to the state of the captured image of the wafer W to be inspected.
  • the inspection of the wafer W based on the captured image of the wafer W according to the present embodiment may be performed in parallel with the conventional inspection of the wafer W based on the captured image of the wafer W.
  • the similarity is calculated for all the specific unevenness distributions D registered in the database 210, but the specific unevenness distribution D is affected by the base of the wafer W to be inspected.
  • the similarity may be calculated only for the specific unevenness distribution D corresponding to the W background.
  • the substrate of the wafer W to be inspected and the substrate to which the specific unevenness distribution registered in the database 210 corresponds are determined based on the device ID, for example.
  • the captured image of the wafer W is assumed to be monochromatic for simplification of explanation, but the captured image of the wafer W is generally composed of the three primary colors of RGB (Red, Green, and Blue). . Therefore, in practice, the information processing according to this embodiment is performed for each of R, G, and B, for example. In this case, when the extracted nonuniformity distribution De overlaps between RGB, the determination of normality/abnormality of the extracted nonuniformity distribution De is performed, for example, by the majority method. That is, a common determination result is adopted for two or more of the three colors of RGB.
  • the information processing according to the present embodiment may be performed only for a part of RGB, for example.
  • for which color information is to be processed is determined, for example, based on at least one of the wafer ID, lot ID, and device ID associated with the wafer W to be inspected.
  • the similarity is not calculated for the specific unevenness distribution D of all colors registered in the database 210, but the similarity is calculated only for the specific unevenness distribution corresponding to the color to be processed.
  • Which color the specific unevenness distribution registered in the database 210 corresponds to is determined based on at least one of the wafer ID, lot ID, and device ID, for example.
  • the determination unit 204 acquires the feature amount related to the shape of the specific unevenness distribution D as the feature amount of the specific unevenness distribution D.
  • the determination unit 204 may extract the feature amount of the specific unevenness distribution D using a trained model.
  • a trained model is, for example, a convolutional neural network (CNN) such as a trained Alexnet. Further, in this case, all the outputs from the fully connected layers of the CNN model are used as the feature amount of the specific mura distribution D in this case, for example.
  • CNN convolutional neural network
  • all the outputs from the fully connected layers of the CNN model are used as the feature amount of the specific mura distribution D in this case, for example.
  • the feature amount of the specific unevenness distribution D both the feature amount related to the shape of the specific unevenness distribution D and the feature amount extracted using the learned model may be used.
  • the information processing for inspection of the wafer W was performed by the control device 6 of the wafer processing system 1, but the information outside the wafer processing system 1 It may be done in a processor.
  • Control device 201 Acquisition unit 202 Creation unit 203 Extraction unit 204 Judgment unit D Specific unevenness distribution De Extracted unevenness distribution H Two-dimensional histogram Im Captured image V Brightness value W Wafer

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