WO2023115653A1 - Transistor à couches minces entièrement transparent à base d'oxyde d'indium-étain et son procédé de préparation - Google Patents
Transistor à couches minces entièrement transparent à base d'oxyde d'indium-étain et son procédé de préparation Download PDFInfo
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- WO2023115653A1 WO2023115653A1 PCT/CN2022/070635 CN2022070635W WO2023115653A1 WO 2023115653 A1 WO2023115653 A1 WO 2023115653A1 CN 2022070635 W CN2022070635 W CN 2022070635W WO 2023115653 A1 WO2023115653 A1 WO 2023115653A1
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- 239000010409 thin film Substances 0.000 title claims abstract description 23
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- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 17
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 14
- 239000001301 oxygen Substances 0.000 abstract description 14
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Transistor à couches minces entièrement transparent à base d'oxyde d'indium-étain (ITO). Le transistor à couches minces entièrement transparent comprend un substrat, une couche tampon, une électrode de grille, une couche diélectrique de grille, une couche de canal et des électrodes de source et de drain, l'électrode de grille et les électrodes de source et de drain étant constituées d'ITO métallique, et la couche de canal étant constituée d'ITO semi-conducteur. Les propriétés semi-conductrices et métalliques de l'ITO peuvent être obtenues au moyen de l'ajustement de l'épaisseur de croissance et de la pression partielle d'oxygène dans la pulvérisation au magnétron. Un tel dispositif de transistor à effet de champ basé sur une électrode ITO permet d'obtenir une meilleure transmission de lumière. De plus, par rapport à d'autres dispositifs à semi-conducteur à oxyde classiques, la conception permet de réduire de manière significative l'utilisation de matériaux métalliques, ce qui permet de réduire encore la difficulté de préparation et le coût ; et en utilisant un ITO de canal semi-conducteur à mobilité élevée, le dispositif peut fournir une capacité de commande supérieure par rapport à d'autres semi-conducteurs à oxyde classiques.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111561524.4 | 2021-12-20 | ||
| CN202111561524.4A CN114242785A (zh) | 2021-12-20 | 2021-12-20 | 一种基于氧化铟锡的全透明薄膜晶体管及其制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2023115653A1 true WO2023115653A1 (fr) | 2023-06-29 |
Family
ID=80759259
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2022/070635 WO2023115653A1 (fr) | 2021-12-20 | 2022-01-07 | Transistor à couches minces entièrement transparent à base d'oxyde d'indium-étain et son procédé de préparation |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114242785A (fr) |
| WO (1) | WO2023115653A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114965642B (zh) * | 2022-05-24 | 2023-08-01 | 福州大学 | 一种基于原子层沉积半导体沟道的凹槽型场效应晶体管生物传感器 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101183667A (zh) * | 2007-12-11 | 2008-05-21 | 西安交通大学 | 一种ZnO基透明薄膜晶体管阵列的制备方法 |
| KR20090065269A (ko) * | 2007-12-17 | 2009-06-22 | 한국전자통신연구원 | 폴리머 보호막이 형성된 투명 박막 트랜지스터 및 이의제조 방법 |
| CN101615582A (zh) * | 2009-06-25 | 2009-12-30 | 浙江大学 | 一种合金氧化物透明薄膜晶体管的制备方法 |
| CN102544108A (zh) * | 2012-01-12 | 2012-07-04 | 北京大学 | 一种氧化锌薄膜晶体管的制备方法 |
| CN103021871A (zh) * | 2012-12-25 | 2013-04-03 | 青岛盛嘉信息科技有限公司 | 一种薄膜晶体管的制备工艺 |
| CN103943683A (zh) * | 2013-12-06 | 2014-07-23 | 山东大学（威海） | 一种铟锡锌氧化物同质薄膜晶体管及其制备方法 |
-
2021
- 2021-12-20 CN CN202111561524.4A patent/CN114242785A/zh active Pending
-
2022
- 2022-01-07 WO PCT/CN2022/070635 patent/WO2023115653A1/fr unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101183667A (zh) * | 2007-12-11 | 2008-05-21 | 西安交通大学 | 一种ZnO基透明薄膜晶体管阵列的制备方法 |
| KR20090065269A (ko) * | 2007-12-17 | 2009-06-22 | 한국전자통신연구원 | 폴리머 보호막이 형성된 투명 박막 트랜지스터 및 이의제조 방법 |
| CN101615582A (zh) * | 2009-06-25 | 2009-12-30 | 浙江大学 | 一种合金氧化物透明薄膜晶体管的制备方法 |
| CN102544108A (zh) * | 2012-01-12 | 2012-07-04 | 北京大学 | 一种氧化锌薄膜晶体管的制备方法 |
| CN103021871A (zh) * | 2012-12-25 | 2013-04-03 | 青岛盛嘉信息科技有限公司 | 一种薄膜晶体管的制备工艺 |
| CN103943683A (zh) * | 2013-12-06 | 2014-07-23 | 山东大学（威海） | 一种铟锡锌氧化物同质薄膜晶体管及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114242785A (zh) | 2022-03-25 |
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