WO2023109307A9 - 一种气体切换系统及其相关半导体制程方法 - Google Patents

一种气体切换系统及其相关半导体制程方法 Download PDF

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Publication number
WO2023109307A9
WO2023109307A9 PCT/CN2022/126509 CN2022126509W WO2023109307A9 WO 2023109307 A9 WO2023109307 A9 WO 2023109307A9 CN 2022126509 W CN2022126509 W CN 2022126509W WO 2023109307 A9 WO2023109307 A9 WO 2023109307A9
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WO
WIPO (PCT)
Prior art keywords
switching system
semiconductor processing
gas
reactant gas
gas inlet
Prior art date
Application number
PCT/CN2022/126509
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English (en)
French (fr)
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WO2023109307A1 (zh
Inventor
野沢俊久
邱大益
李晶
关帅
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拓荆科技股份有限公司
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Publication date
Application filed by 拓荆科技股份有限公司 filed Critical 拓荆科技股份有限公司
Publication of WO2023109307A1 publication Critical patent/WO2023109307A1/zh
Publication of WO2023109307A9 publication Critical patent/WO2023109307A9/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本揭露涉及一种气体切换系统及其相关半导体制程方法。在本揭露的一实施例中，一种气体切换系统，其适用于向半导体制程装置提供气体切换功能，所述半导体制程装置至少包含设置于上游的制程气体源、设置于下游的制程腔室以及真空泵，所述气体切换系统设置在所述制程气体源与所述制程腔室之间，其特征在于，所述气体切换系统包括：实质上居中设置的第一反应气体入口和第二反应气体入口，所述第一反应气体入口和所述第二反应气体入口分别经配置以接收来自所述制程气体源的反应气体；分别设置于所述第一反应气体入口两侧的第一阀体单元和第二阀体单元；及分别设置于所述第二反应气体入口两侧的第三阀体单元和第四阀体单元。
PCT/CN2022/126509 2021-12-14 2022-10-20 一种气体切换系统及其相关半导体制程方法 WO2023109307A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202111531442.5A CN116288262A (zh) 2021-12-14 2021-12-14 一种气体切换系统及其相关半导体制程方法
CN202111531442.5 2021-12-14

Publications (2)

Publication Number Publication Date
WO2023109307A1 WO2023109307A1 (zh) 2023-06-22
WO2023109307A9 true WO2023109307A9 (zh) 2024-05-23

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ID=86774823

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/126509 WO2023109307A1 (zh) 2021-12-14 2022-10-20 一种气体切换系统及其相关半导体制程方法

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CN (1) CN116288262A (zh)
WO (1) WO2023109307A1 (zh)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6924235B2 (en) * 2002-08-16 2005-08-02 Unaxis Usa Inc. Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method
US20050221004A1 (en) * 2004-01-20 2005-10-06 Kilpela Olli V Vapor reactant source system with choked-flow elements
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US9034768B2 (en) * 2010-07-09 2015-05-19 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US20180080124A1 (en) * 2016-09-19 2018-03-22 Applied Materials, Inc. Methods and systems for thermal ale and ald
CN108962894B (zh) * 2018-06-22 2024-01-16 长鑫存储技术有限公司 一种填充沟槽形成触点的方法

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Publication number Publication date
CN116288262A (zh) 2023-06-23
WO2023109307A1 (zh) 2023-06-22
TW202331891A (zh) 2023-08-01

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