WO2017041784A3 - Verfahren zur abscheidung von aluminiumoxiddünnschichten und inline-pecvd-anlage - Google Patents

Verfahren zur abscheidung von aluminiumoxiddünnschichten und inline-pecvd-anlage Download PDF

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Publication number
WO2017041784A3
WO2017041784A3 PCT/DE2016/100382 DE2016100382W WO2017041784A3 WO 2017041784 A3 WO2017041784 A3 WO 2017041784A3 DE 2016100382 W DE2016100382 W DE 2016100382W WO 2017041784 A3 WO2017041784 A3 WO 2017041784A3
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WO
WIPO (PCT)
Prior art keywords
line conveying
line
plasma
plasma chamber
gas inlet
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PCT/DE2016/100382
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English (en)
French (fr)
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WO2017041784A2 (de
Inventor
Matthias Junghänel
Axel Schwabedissen
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Hanwha Q Cells Gmbh
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Publication date
Application filed by Hanwha Q Cells Gmbh filed Critical Hanwha Q Cells Gmbh
Publication of WO2017041784A2 publication Critical patent/WO2017041784A2/de
Publication of WO2017041784A3 publication Critical patent/WO2017041784A3/de

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur plasmaunterstützten Abscheidung von Aluminiumoxiddünnschichten auf Halbleiterwafern für die Herstellung von Wafersolarzellen mit folgenden Verfahrensschritten: Bereitstellen einer Inline PECVD-Anlage mit mindestens einer Plasmakammer (1) ausgerüstet mit einer in der Plasmakammer angeordneten Plasmaelektrode (10), einem Vakuumpumpsystem (11) und einer Inline-Transporteinrichtung (12) für den liegenden Transport von Halbleiterwafern entlang einer Inline-Transportrichtung (T), Anordnen von Halbleiterwafern auf der Inline-Transporteinrichtung (12), Einschleusen der Inline-Transporteinrichtung (12) mit den Halbleiterwafern in die Plasmakammer (1), Einleiten eines sauerstoffhaltigen Gases an einem ersten Gaseinlass (13) in die aktivierte Plasmakammer (1), Einleiten eines aluminiumhaltigen Gases an einem vom ersten Gaseinlass (13) beabstandeten weiteren Gaseinlass (14) in die aktivierte Plasmakammer (1), wobei der weitere Gaseinlass (14) näher an der Inline-Transporteinrichtung (12) und entfernter von der Plasmaelektrode (10) angeordnet ist als der erste Gaseinlass (13), Bewegen der Inline-Transporteinrichtung (12) entlang der Inline-Transportrichtung (T) durch die Plasmakammer (1), dadurch gekennzeichnet, dass das Einleiten des aluminiumhaltigen Gases in die Plasmakammer (1) in Richtung der Inline-Transportrichtung (T) betrachtet ausschließlich oder überwiegend vor der Plasmaelektrode (10) oder ausschließlich oder überwiegend hinter der Plasmaelektrode (10) vorgenommen wird. Ferner betrifft die Erfindung eine entsprechende Inline PECVD-Anlage.
PCT/DE2016/100382 2015-09-11 2016-08-24 Verfahren zur plasmaunterstützten abscheidung von aluminiumoxiddünnschichten auf halbleiterwafern für die herstellung von wafersolarzellen und inline-pecvd-anlage WO2017041784A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015115329.7A DE102015115329A1 (de) 2015-09-11 2015-09-11 Verfahren zur plasmaunterstützten Abscheidung von Aluminiumoxiddünnschichten auf Halbleiterwafern für die Herstellung von Wafersolarzellen und Inline-PECVD-Anlage
DE102015115329.7 2015-09-11

Publications (2)

Publication Number Publication Date
WO2017041784A2 WO2017041784A2 (de) 2017-03-16
WO2017041784A3 true WO2017041784A3 (de) 2017-05-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2016/100382 WO2017041784A2 (de) 2015-09-11 2016-08-24 Verfahren zur plasmaunterstützten abscheidung von aluminiumoxiddünnschichten auf halbleiterwafern für die herstellung von wafersolarzellen und inline-pecvd-anlage

Country Status (2)

Country Link
DE (1) DE102015115329A1 (de)
WO (1) WO2017041784A2 (de)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003249452A (ja) * 2002-02-26 2003-09-05 Hitachi Kokusai Electric Inc 基板処理装置
DE19812558B4 (de) * 1998-03-21 2010-09-23 Roth & Rau Ag Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen
DE102012219667A1 (de) * 2012-10-26 2014-04-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Aufbringen einer Aluminiumoxidschicht auf ein Halbleitersubstrat

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10239875B4 (de) * 2002-08-29 2008-11-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur großflächigen Beschichtung von Substraten bei Atmosphärendruckbedingungen
US7064089B2 (en) * 2002-12-10 2006-06-20 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus and method for plasma treatment
WO2012109523A2 (en) * 2011-02-10 2012-08-16 General Plasma, Inc. Deposition of thin films on energy sensitive surfaces
GB201117242D0 (en) * 2011-10-06 2011-11-16 Fujifilm Mfg Europe Bv Method and device for manufacturing a barrier layer on a flexible subtrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19812558B4 (de) * 1998-03-21 2010-09-23 Roth & Rau Ag Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen
JP2003249452A (ja) * 2002-02-26 2003-09-05 Hitachi Kokusai Electric Inc 基板処理装置
DE102012219667A1 (de) * 2012-10-26 2014-04-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Aufbringen einer Aluminiumoxidschicht auf ein Halbleitersubstrat

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WO2017041784A2 (de) 2017-03-16

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