WO2009071815A3 - Equipement pour la fabrication de semi-conducteurs, dispositif de pompage et porte-substrat correspondants - Google Patents

Equipement pour la fabrication de semi-conducteurs, dispositif de pompage et porte-substrat correspondants Download PDF

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Publication number
WO2009071815A3
WO2009071815A3 PCT/FR2008/052101 FR2008052101W WO2009071815A3 WO 2009071815 A3 WO2009071815 A3 WO 2009071815A3 FR 2008052101 W FR2008052101 W FR 2008052101W WO 2009071815 A3 WO2009071815 A3 WO 2009071815A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate holder
gas
vacuum pump
pumping device
inlet
Prior art date
Application number
PCT/FR2008/052101
Other languages
English (en)
Other versions
WO2009071815A2 (fr
Inventor
Philippe Maquin
Original Assignee
Alcatel Lucent
Philippe Maquin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Lucent, Philippe Maquin filed Critical Alcatel Lucent
Priority to US12/734,598 priority Critical patent/US20100294431A1/en
Priority to JP2010534526A priority patent/JP2011504298A/ja
Priority to EP08856396A priority patent/EP2212901A2/fr
Publication of WO2009071815A2 publication Critical patent/WO2009071815A2/fr
Publication of WO2009071815A3 publication Critical patent/WO2009071815A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un équipement pour la fabrication de semi-conducteurs comportant une chambre de procédés (2), un porte-substrat (5) apte à supporter un substrat (6) devant être traité dans ladite chambre (2) et un dispositif de pompage (4) comportant une pompe à vide (7) dans laquelle un flux de gaz à pomper peut circuler entre une entrée d'admission des gaz (9) et une sortie de refoulement des gaz (10) et dont ladite entrée (9) est mise en communication avec la chambre de procédés (2), le porte-substrat (5) et la pompe à vide (7) possédant le même axe (12), le porte- substrat (5) étant disposé en amont de ladite entrée (9) de ladite pompe à vide (7) dans le flux des gaz à pomper, caractérisé en ce que le dispositif de pompage (4) comporte un moyen de régulation (8) de la pression des gaz en sortie de refoulement (10) de ladite pompe à vide (7), apte à contrôler la pression des gaz en entrée d'admission (9) de ladite pompe à vide (7) et en ce que !e porte-substrat (5) comporte au moins trois branches de support (21 ) reliées à un support (20) du porte-substrat (5) pour d'une part, fixer ledit support (20) à la chambre de procédés (2) et d'autre part, pour acheminer des servitudes au support (20), au moins une branche (21) comportant au moins un conduit (22), pour le passage desdits servitudes.
PCT/FR2008/052101 2007-11-21 2008-11-21 Equipement pour la fabrication de semi-conducteurs, dispositif de pompage et porte-substrat correspondants WO2009071815A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/734,598 US20100294431A1 (en) 2007-11-21 2008-11-21 Equipment for producing semiconductors, corresponding pumping device and substrate holder
JP2010534526A JP2011504298A (ja) 2007-11-21 2008-11-21 半導体を生産するための設備、付随するポンピング装置および基板ホルダー
EP08856396A EP2212901A2 (fr) 2007-11-21 2008-11-21 Equipement pour la fabrication de semi-conducteurs, dispositif de pompage et porte-substrat correspondants

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0759189 2007-11-21
FR0759189A FR2923946A1 (fr) 2007-11-21 2007-11-21 Equipement pour la fabrication de semi-conducteurs, dispositif de pompage et porte-substrat correspondant

Publications (2)

Publication Number Publication Date
WO2009071815A2 WO2009071815A2 (fr) 2009-06-11
WO2009071815A3 true WO2009071815A3 (fr) 2009-07-30

Family

ID=39666174

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2008/052101 WO2009071815A2 (fr) 2007-11-21 2008-11-21 Equipement pour la fabrication de semi-conducteurs, dispositif de pompage et porte-substrat correspondants

Country Status (6)

Country Link
US (1) US20100294431A1 (fr)
EP (1) EP2212901A2 (fr)
JP (1) JP2011504298A (fr)
KR (1) KR20100087725A (fr)
FR (1) FR2923946A1 (fr)
WO (1) WO2009071815A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9267605B2 (en) * 2011-11-07 2016-02-23 Lam Research Corporation Pressure control valve assembly of plasma processing chamber and rapid alternating process
JP6967954B2 (ja) * 2017-12-05 2021-11-17 東京エレクトロン株式会社 排気装置、処理装置及び排気方法
KR20200141828A (ko) * 2019-06-11 2020-12-21 현대자동차주식회사 퍼징시에 기통별로 연료를 보상하는 방법
JP7462728B2 (ja) * 2021-10-26 2024-04-05 東京エレクトロン株式会社 プラズマ処理装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010047762A1 (en) * 1997-05-20 2001-12-06 Kazuichi Hayashi Processing apparatus
US20020117112A1 (en) * 1998-12-11 2002-08-29 Makoto Okabe Vacuum processing apparatus
US20020180946A1 (en) * 1999-04-19 2002-12-05 Asml Netherlands B.V. Motion feed-through into a vacuum chamber and its application in lithographic projection apparatus
US20030066605A1 (en) * 2001-10-09 2003-04-10 Bu-Jin Ko Air exhaust system of a chamber for manufacturing semiconductor device
US20050183829A1 (en) * 1997-11-03 2005-08-25 Goodman Matthew G. Low-mass susceptor improvements
US20060121211A1 (en) * 2004-12-07 2006-06-08 Byung-Chul Choi Chemical vapor deposition apparatus and chemical vapor deposition method using the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US6174377B1 (en) * 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US20050016466A1 (en) * 2003-07-23 2005-01-27 Applied Materials, Inc. Susceptor with raised tabs for semiconductor wafer processing
US7335277B2 (en) * 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010047762A1 (en) * 1997-05-20 2001-12-06 Kazuichi Hayashi Processing apparatus
US20050183829A1 (en) * 1997-11-03 2005-08-25 Goodman Matthew G. Low-mass susceptor improvements
US20020117112A1 (en) * 1998-12-11 2002-08-29 Makoto Okabe Vacuum processing apparatus
US20020180946A1 (en) * 1999-04-19 2002-12-05 Asml Netherlands B.V. Motion feed-through into a vacuum chamber and its application in lithographic projection apparatus
US20030066605A1 (en) * 2001-10-09 2003-04-10 Bu-Jin Ko Air exhaust system of a chamber for manufacturing semiconductor device
US20060121211A1 (en) * 2004-12-07 2006-06-08 Byung-Chul Choi Chemical vapor deposition apparatus and chemical vapor deposition method using the same

Also Published As

Publication number Publication date
JP2011504298A (ja) 2011-02-03
US20100294431A1 (en) 2010-11-25
WO2009071815A2 (fr) 2009-06-11
FR2923946A1 (fr) 2009-05-22
EP2212901A2 (fr) 2010-08-04
KR20100087725A (ko) 2010-08-05

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