WO2023108451A1 - Dispositif électroluminescent et appareil de transfert - Google Patents

Dispositif électroluminescent et appareil de transfert Download PDF

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Publication number
WO2023108451A1
WO2023108451A1 PCT/CN2021/138164 CN2021138164W WO2023108451A1 WO 2023108451 A1 WO2023108451 A1 WO 2023108451A1 CN 2021138164 W CN2021138164 W CN 2021138164W WO 2023108451 A1 WO2023108451 A1 WO 2023108451A1
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Prior art keywords
light
layer
electrode
type semiconductor
emitting
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PCT/CN2021/138164
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English (en)
Chinese (zh)
Inventor
樊勇
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厦门市芯颖显示科技有限公司
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Priority to PCT/CN2021/138164 priority Critical patent/WO2023108451A1/fr
Publication of WO2023108451A1 publication Critical patent/WO2023108451A1/fr

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    • H01L27/15—
    • H01L33/38—
    • H01L33/46—

Definitions

  • the present application relates to the field of display technology, in particular to a light emitting device and a transfer device.
  • Micro LED (miniature light-emitting diode) display technology refers to a display technology that uses self-luminous micron-scale LEDs as light-emitting pixel units and assembles them on the drive panel to form a high-density LED array. Due to the characteristics of small size, high integration and self-illumination of micro LED chips, compared with LCD and OLED in terms of display, it has greater brightness, resolution, contrast, energy consumption, service life, response speed and thermal stability. advantages, so it is often used as a light emitting device in various places.
  • the existing Micro LED has a large luminous angle and cannot achieve narrow luminescence. Therefore, when it is used in AR (augmented reality, augmented reality), MR (mixed reality, mixed reality) Micro-LED display panels, high-brightness vehicles and micro-device transfer For applications such as devices that require narrow light sources, the existing Micro LEDs are difficult to meet their needs.
  • AR augmented reality, augmented reality
  • MR mixed reality, mixed reality
  • embodiments of the present application provide a light emitting device and a transfer device using the light emitting device.
  • a light-emitting device proposed by an embodiment of the present application includes, for example: a light-emitting functional layer provided with a light-emitting surface; a first electrode provided on one side of the light-emitting functional layer and electrically connected to the light-emitting functional layer; Two electrodes, arranged on the same side of the light-emitting functional layer as the first electrode and electrically connected to the light-emitting functional layer respectively; a light-shielding layer covering the light-emitting surface, and a light-emitting port is arranged on the light-shielding layer In order to expose the light emitted by the light emitting functional layer, the area of the light outlet is smaller than the area of the light outlet surface.
  • a light-shielding layer with a light outlet is provided on the light outlet surface, so that the area of the light outlet is smaller than the area of the light outlet, thereby realizing narrow light emission of the light emitting device.
  • the light-emitting functional layer includes: a first doping type semiconductor layer electrically connected to the first electrode; a second doping type semiconductor layer electrically connected to the second electrode;
  • a buffer layer located on a side of the second doping type semiconductor layer away from the second electrode; wherein the light exit surface is located on a side of the buffer layer away from the second doping type semiconductor layer, the The first electrode is located on a side of the first doping type semiconductor layer away from the active layer, and the second electrode is located on a side of the second doping type semiconductor layer away from the buffer layer.
  • the light-emitting functional layer includes: a first doping type semiconductor layer, connected to the first electrode; a second doping type semiconductor layer, connected to the second electrode; an active layer, Set between the first doping type semiconductor layer and the second doping type semiconductor; a buffer layer, located on the side of the second doping type semiconductor layer away from the second electrode; wherein the light emitting The surface and the first electrode are located on the side of the first doping type semiconductor layer away from the active layer, and the first electrode penetrates through the light shielding layer and is connected to the first doping type semiconductor layer, so The second electrode is located on a side of the second doping type semiconductor layer away from the buffer layer.
  • the light-shielding layer also covers other surfaces on the light-emitting functional layer except the light-emitting surface, and the first electrode and the second electrode respectively penetrate through the light-shielding layer .
  • the light-shielding layer includes an insulating layer and a metal layer, and the metal layer is located on a side of the insulating layer away from the light-emitting functional layer.
  • the light-shielding layer is a distributed Bragg mirror.
  • the light emitting device further includes a condenser lens, and the condenser lens is arranged at the light outlet and covers the light outlet.
  • the light outlet includes a plurality of sub-light outlets with hollow patterns.
  • a transfer device proposed in the embodiments of the present application includes, for example: a transfer substrate; a driving device layer disposed on the transfer substrate; a light emitting device as described in any one of the preceding embodiments, disposed on the transfer substrate; The side of the driving device layer away from the transfer substrate and electrically connected to the driving device layer; the first adhesive colloid layer is arranged on the side of the driving device layer away from the transfer substrate.
  • the transfer device further includes: a second adhesive colloid layer, pasted on the side of the driving substrate away from the transfer substrate and covering the light emitting device; an adhesive substrate, arranged on Between the first adhesive colloid layer and the second adhesive colloid layer.
  • an adhesive protrusion is disposed on a side of the first adhesive gel layer away from the driving substrate, and the adhesive protrusion is disposed corresponding to the light emitting device.
  • a light-shielding layer with a light outlet is provided on the light outlet surface, so that the area of the light outlet is smaller than the area of the light outlet surface, thereby realizing the light emitting device. narrow light.
  • a light-shielding layer is arranged on other surfaces of the light-emitting device to reduce side light output of the light-emitting device.
  • the light-shielding layer is set as an insulating layer and a metal layer or a structure of a distributed Bragg reflector, which increases the reflection of light on multiple sides and the resonance in the reflection cavity, thereby improving the utilization rate of light.
  • a condenser lens is arranged at the light outlet, which further narrows the light outlet angle of the light emitting device and improves the brightness of the light emitting device. Furthermore, by setting a plurality of light outlets with hollow patterns, the light angle is further narrowed, and a light emitting device with narrow light emission is provided.
  • the transfer device provided by the embodiment of the present application, by disposing the light-emitting device capable of realizing narrow light emission on the transfer device, it solves the problems caused by the large light emission angle of the light-emitting device and the side light emission in the transfer device to adjacent areas. In order to realize the debonding of the precise position, improve the transfer yield and transfer reliability of micro devices.
  • Fig. 1 is a schematic structural diagram of a light emitting device provided in the first embodiment of the present application.
  • Fig. 2 is a schematic structural diagram of another light emitting device provided in the first embodiment of the present application.
  • Fig. 3 is a schematic structural diagram of another light emitting device provided in the first embodiment of the present application.
  • Fig. 4 is a schematic structural diagram of another light emitting device provided in the first embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a light-emitting surface in the first embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of another light-emitting surface in the first embodiment of the present application.
  • Fig. 7 is a schematic structural diagram of a light emitting device provided in the second embodiment of the present application.
  • Fig. 8 is a schematic structural diagram of another light emitting device provided in the first embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of another light emitting device provided in the first embodiment of the present application.
  • Fig. 10 is a schematic structural diagram of another light emitting device provided in the first embodiment of the present application.
  • Fig. 11 is a schematic structural diagram of a transfer device provided in the third embodiment of the present application.
  • FIG. 12 is a schematic structural diagram of another transfer device provided in the third embodiment of the present application.
  • FIG. 13 is a schematic structural diagram of another transfer device provided in the third embodiment of the present application.
  • Fig. 14 is a schematic structural diagram of another light emitting device transfer device provided in the third embodiment of the present application.
  • the first embodiment of the present application provides a light-emitting device 10 , which includes, for example, a light-emitting functional layer 11 , a first electrode 12 , a second electrode 13 and a light-shielding layer 14 .
  • the light-emitting functional layer 11 can, for example, emit light of various colors such as infrared light, ultraviolet light, and blue light.
  • the light-emitting functional layer 11 is provided with a light-emitting surface 1101 , so that the light emitted by the light-emitting functional layer 11 can pass through the light-emitting surface 1101 and be emitted to the external environment.
  • the first electrode 12 is, for example, disposed on one side of the light emitting functional layer 11 and electrically connected to the light emitting functional layer 11 .
  • the second electrode 13 is disposed on the same side as the first electrode 12 on the light emitting functional layer 11 and is electrically connected to the light emitting functional layer respectively.
  • the first electrode 12 and the second electrode 13 are located on the same side of the light-emitting functional layer 11 , and are electrically connected to the light-emitting functional layer 11 at both ends of the light-emitting functional layer 11 .
  • the light-shielding layer 14 covers, for example, the light-emitting surface 1101 .
  • a light outlet 141 is provided on the light-shielding layer 14 to expose the light emitted by the light-emitting functional layer 11 .
  • the area of the light exit 141 is smaller than the area of the light exit surface 1101 .
  • a light-shielding layer with a light exit hole is provided on the light exit surface, so that the area of the light exit opening is smaller than the area of the light exit surface, and the narrow light exit of the light emitting device is realized.
  • the light emitting functional layer 11 includes, for example, a first doping type semiconductor layer 111 , a second doping type semiconductor layer 113 , an active layer 112 and a buffer layer 114 .
  • the light emitting surface 1101 is located on the side of the buffer layer 114 away from the second doped type semiconductor layer 113 , and the light emitted from the active layer 112 sequentially passes through the second doped type semiconductor layer 113 and the buffer layer 114 to emerge from the light emitting surface 1101 .
  • the first doping type semiconductor layer 111 is, for example, an N-type GaN (gallium nitride, gallium nitride) layer, and the first electrode 12 electrically connected to the first doping type semiconductor layer 111 is, for example, an N-type electrode.
  • the second doping type semiconductor layer 113 is, for example, a P-type GaN layer, and the second electrode 13 electrically connected to the second doping type semiconductor layer 113 is, for example, a P-type electrode. It can be understood that the materials of the first doping type semiconductor layer 111 and the second doping type semiconductor layer 113 can be interchanged, and similarly, the positions of the first electrode 12 and the second electrode 13 can also be interchanged.
  • the active layer 112 is disposed between the first doping type semiconductor layer 111 and the second doping type semiconductor layer 113 .
  • the active layer 112 is, for example, an InGaN (indium gallium nitride), GaN, AlGaAs (aluminum gallium arsenide) multi-quantum well layer, which can emit infrared light, ultraviolet light, blue light and other light. It can be understood that the material of the active layer 112 can also be other inorganic semiconductor materials to emit light of different colors, and the present application is not limited thereto.
  • the buffer layer 114 is, for example, disposed on a side of the second doping type semiconductor layer 113 away from the second electrode 13 .
  • the composition material of the buffer layer 114 includes, for example, one of aluminum nitride and gallium nitride. Depending on the growth substrate of the buffer layer 114 or the material of the active layer 112 , the buffer layer 114 may also be doped with other materials such as aluminum. This application is not limited thereto.
  • the buffer layer 114 can flatten the bottom layer of the light emitting device, thereby providing a good growth substrate for multiple layer structures disposed on the buffer layer 114 .
  • the light-emitting device 10 provided by the present application can also add other functional layers according to actual needs, such as unintentionally doped gallium nitride layer (u-GaN), located between the N-type semiconductor layer and the multi-quantum well layer
  • u-GaN unintentionally doped gallium nitride layer
  • EBL Electron Blocking Layer
  • the light-shielding layer 14 also covers other surfaces of the light-emitting functional layer 11 except the light-emitting surface 1101 .
  • the first electrode 12 and the second electrode 13 respectively penetrate through the light-shielding layer 14 for realizing electrical conduction with the external power supply.
  • the above technical solution further reduces side light emission of the light emitting device by covering multiple sides of the light emitting device with light-shielding layers.
  • the light shielding layer 14 is, for example, a highly reflective metal coating.
  • the highly reflective metal coating includes an insulating layer 141 and a metal layer 142 .
  • the metal layer 142 is located on a side of the insulating layer 141 away from the light-emitting functional layer 11 , that is, the metal layer 142 is disposed between the insulating layer 141 and the light-emitting functional layer 11 .
  • the material of the insulating layer 141 is, for example, a material with good insulating properties such as silicon oxide.
  • the metal layer 142 is, for example, aluminum, silver, gold and other metal materials with good reflective properties, and the present application is not limited thereto.
  • the insulating layer 141 is arranged on the light-emitting surface 1101 and multiple surfaces of the light-emitting functional layer 11 except the light-emitting surface 1101, which can isolate the contact between the metal layer 142 and the light-emitting functional layer 11 and play a protective role. In addition, the insulating layer 141 can also prevent light emission.
  • the combination of holes and electrons in the first doping type semiconductor layer 111 and the second doping type semiconductor layer 113 on multiple sides of the device 10 produces ineffective luminescence.
  • the above technical proposal can reflect the light emitted by the light-emitting device by arranging the metal layer on the side of the insulating layer away from the light-emitting functional layer, thereby improving the utilization rate of light.
  • a highly reflective metal coating is provided on the side where the first electrode and the second electrode are located, which improves the utilization of light and the resonance in the reflective cavity, and is conducive to reducing the light output angle, so as to meet the needs of narrow and high light output. Show application scenarios.
  • the light-shielding layer 14 may also be a distributed Bragg reflector (Distributed Bragg Reflector, DBR).
  • the distributed Bragg reflector is a structure formed by periodic arrangement of various inorganic materials with different refractive indices. Referring to FIG. 4 , it shows a distributed Bragg reflector formed by two different inorganic materials arranged at intervals.
  • the above technical solution not only shields multiple sides of the light emitting device from light by setting the light shielding layer as a distributed Bragg reflector, but also improves light reflection, thus improving the utilization rate of light.
  • the light emitting device 10 further includes a condenser lens 10 .
  • the condenser lens 10 is, for example, disposed at the light outlet 141 and covers the light outlet 141 . Wherein, the light emitting angle of the light emitting device is further reduced by setting the condenser lens, and the light emitting brightness of the light emitting device is improved.
  • the light-shielding layer 14 covers, for example, the light-emitting surface 1101 , so that the light-emitting surface 1101 is composed of the light-emitting opening 141 and the light-shielding layer 14 .
  • the light-shielding layer covering the light-emitting surface 1101 is, for example, provided with a plurality of hollow patterns. Therefore, as shown in FIG. 6 , the light outlet 141 includes, for example, a plurality of sub-light outlets 1411 with hollow patterns.
  • the plurality of sub-light outlets 1411 may, for example, be provided with corresponding condenser lenses, so as to further narrow the light-emitting angle and improve brightness.
  • the shape of the hollow pattern may be square, circular, triangular or other geometric patterns, which is not limited in the present application.
  • the first embodiment of the present application has the following beneficial effects: by providing a light-shielding layer with a light outlet on the light outlet surface, the area of the light outlet is smaller than the area of the light outlet surface, thereby realizing narrow light output of the light emitting device.
  • a light-shielding layer is arranged on other surfaces of the light-emitting device to reduce side light output of the light-emitting device.
  • the light-shielding layer is set as an insulating layer and a metal layer or a structure of a distributed Bragg reflector, which increases the reflection of light on multiple sides and the resonance in the reflection cavity, thereby improving the utilization rate of light.
  • a condenser lens is arranged at the light outlet, which further narrows the light outlet angle of the light-emitting device and improves the brightness of the light-emitting device. Furthermore, by setting a plurality of light outlets with hollow patterns, the light angle is further narrowed, and a light emitting device with narrow light emission is provided.
  • a light-emitting device 20 provided in the second embodiment of the present application includes, for example, a first electrode 22 , a second electrode 23 , a light-shielding layer 24 , and a light-emitting functional layer (not shown in FIG. 7 ).
  • a light-emitting surface 2101 is disposed on the light-emitting functional layer.
  • the light emitting functional layer includes: a first doping type semiconductor layer 211 , a second doping type semiconductor layer 213 , an active layer 212 and a buffer layer 214 .
  • the light emitting surface 2101 and the first electrode 22 are located on a side of the first doped type semiconductor layer 211 away from the active layer 212 .
  • the light-shielding layer 24 is, for example, disposed on the light-emitting surface 2101, and the light-shielding layer 24 is provided with a light-emitting port 241.
  • the light emitted from the active layer 212 sequentially passes through the first doped type semiconductor layer 211 and exits from the light-emitting port 141 on the light-emitting surface 2101. .
  • the first doping type semiconductor layer 211 is, for example, an N-type GaN (gallium nitride, gallium nitride) layer, and the first electrode 22 electrically connected to the first doping type semiconductor layer 211 is, for example, an N-type electrode.
  • the second doping type semiconductor layer 213 is, for example, a P-type GaN layer, and the second electrode 23 electrically connected to the second doping type semiconductor layer 213 is, for example, a P-type electrode.
  • the active layer 212 is, for example, an InGaN (indium gallium nitride), GaN, AlGaAs (aluminum gallium arsenide) multi-quantum well layer to emit infrared light, ultraviolet light, blue light and other light. It can be understood that the material of the active layer 212 can also be other inorganic semiconductor materials to emit light of different colors, and the present application is not limited thereto.
  • the buffer layer 214 is, for example, disposed on a side of the second doping type semiconductor layer 213 away from the second electrode 23 .
  • the material of the buffer layer 214 includes, for example, one of aluminum nitride and gallium nitride.
  • the buffer layer 214 can also be doped with other materials such as aluminum. This application is not limited thereto.
  • the buffer layer 214 can flatten the bottom layer of the light emitting device, thereby providing a good growth substrate for multiple layer structures disposed on the buffer layer 214 .
  • the light-emitting device 20 provided in the present application can also add other functional layers according to actual needs, such as transparent metal electrode layers on the side of the first electrode 22 and the second electrode 23, non-intentionally doped nitride Gallium layer (u-GaN), the stress release layer between the N-type semiconductor layer and the multi-quantum well layer, the electron blocking layer (EBL, Electron Blocking Layer) between the multi-quantum well layer and the P-type semiconductor layer, etc.
  • u-GaN non-intentionally doped nitride Gallium layer
  • EBL Electron Blocking Layer
  • the light-shielding layer 24 also covers other surfaces of the light-emitting functional layer except the light-emitting surface 2101 .
  • the first electrode 22 and the second electrode 23 respectively penetrate through the light-shielding layer 24 for realizing electrical conduction with an external power source.
  • the above technical solution further reduces side light leakage of the light-emitting device by covering multiple sides of the light-emitting device with light-shielding layers.
  • the light-shielding layer 24 is, for example, a highly reflective metal coating.
  • the highly reflective metal coating includes an insulating layer 241 and a metal layer 242 .
  • the metal layer 242 is located on a side of the insulating layer 241 away from the light-emitting functional layer.
  • the material of the insulating layer 241 is, for example, a material with good insulating properties such as silicon oxide.
  • the metal layer 242 is, for example, aluminum, silver, gold and other metal materials with good reflective properties, and the present application is not limited thereto.
  • the insulating layer 241 is disposed on the light-emitting surface 2101 and multiple surfaces of the light-emitting device 20 except the light-emitting surface, which can isolate the contact between the metal layer 242 and the light-emitting functional layer and play a protective role.
  • the insulating layer 241 can also prevent ineffective light emission generated by the combination of holes and electrons in the first doped type semiconductor layer 211 and the second doped type semiconductor layer 213 on multiple sides of the light emitting device.
  • the above technical proposal can reflect the light emitted by the light-emitting device by arranging the metal layer on the side of the insulating layer away from the light-emitting functional layer, thereby improving the utilization of light.
  • a highly reflective metal coating is provided on the side where the first electrode and the second electrode are located, which improves the utilization of light and the resonance in the reflective cavity, and is conducive to reducing the light output angle, so as to meet the needs of narrow and high light output. Show application scenarios.
  • the light shielding layer 24 may also be a distributed Bragg reflector.
  • the distributed Bragg reflector is a structure formed by periodic arrangement of various inorganic materials with different refractive indices.
  • Fig. 10 shows a distributed Bragg reflector formed by two different inorganic materials spaced apart. Wherein, setting the light-shielding layer as a distributed Bragg reflector not only shields multiple sides of the light-emitting device, but also improves light reflection, thus increasing the utilization rate of light.
  • the light emitting device 20 further includes a condenser lens 25 , for example.
  • the condenser lens 25 is, for example, disposed at the light outlet 241 and covers the light outlet 241 . Wherein, by setting the condensing lens, the light emitting angle of the light emitting device is further reduced, and the brightness is improved.
  • the light-shielding layer 24 covers, for example, the light-emitting surface 2101 , the light-emitting surface 2101 is composed of the light-emitting opening 241 and the light-shielding layer 24 .
  • the light-shielding layer 24 covering the light-emitting surface 2101 is provided with a plurality of hollow patterns, for example. Therefore, the light outlet 241 includes, for example, a plurality of sub-light outlets with hollow patterns.
  • the light outlet 241 on the light outlet surface 2401 refer to the description of the light outlet 141 in the foregoing first embodiment and FIG. 5 and FIG. 6 , and details will not be repeated here.
  • the plurality of sub-light outlets may, for example, be provided with corresponding condenser lenses, so as to further narrow the light-emitting angle and improve brightness.
  • the shape of the hollow pattern may be square, circular, triangular or other geometric patterns, which is not limited in the present application.
  • the second embodiment of the present application provides a light-emitting device 20 , the light-emitting surface of which is located on the same side as the two electrodes of the light-emitting functional layer 21 , so as to achieve light emission from the top surface of the light-emitting device 20 .
  • the light-emitting surface is located on the opposite side of the two electrodes, so that light can be emitted from the bottom surface of the light-emitting device 10 .
  • Both light-emitting devices can be used as narrow light-emitting light sources of the display panel, and can be applied in different scenarios due to their different light-emitting surfaces.
  • the second embodiment of the present application has the following beneficial effects: by providing a light-shielding layer with a light outlet on the light outlet surface, the area of the light outlet is smaller than the area of the light outlet surface, thereby realizing narrow light output of the light emitting device.
  • a light-shielding layer is arranged on other surfaces of the light-emitting device to reduce side light output of the light-emitting device.
  • the light-shielding layer is set as an insulating layer and a metal layer or a structure of a distributed Bragg reflector, which increases the reflection of light on multiple sides and the resonance in the reflection cavity, thereby improving the utilization rate of light.
  • a condenser lens is arranged at the light outlet, which further narrows the light emitting angle of the light emitting device and improves the brightness of the light emitting device. Furthermore, by setting a plurality of light outlets with hollow patterns, the light angle is further narrowed, and a light emitting device with narrow light emission is provided.
  • a transfer device 30 provided by the third embodiment of the present application includes, for example, a transfer substrate 311 , a driving device layer 312 , a light emitting device 30 and a first adhesive layer 313 .
  • the light emitting device 30 adopts any light emitting device as provided in the aforementioned first embodiment and/or the second embodiment.
  • the light-emitting device 30 can realize narrow light emission, which solves the problem of the large light-emitting angle of the light-emitting device and the influence of side light emission on adjacent areas, and provides a micro-device transfer device that can realize precise debonding.
  • the transfer substrate 311 is, for example, a glass substrate, a flexible substrate, or other substrate materials with good bearing performance.
  • the driving device layer 312 is, for example, a TFT (Thin Film Transistor, thin film field effect transistor) driving device, a CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor), a silicon-based liquid crystal (Liquid Crystal on Silicon, LCOS) substrate, etc. for driving A driving circuit for a light emitting device.
  • the driving device layer 312 is, for example, disposed on the transfer substrate 311 .
  • the light emitting device 30 is, for example, disposed on the side of the driving device layer 313 away from the transfer substrate 311 , and the light emitting device 30 is electrically connected to the driving device layer, so as to emit light under the driving of the driving device layer 312 .
  • the first adhesive colloid layer 313 is, for example, IR (Infrared Radiation, infrared), UR (Ultraviolet Rays, ultraviolet) photolytic adhesives and other reusable photolytic adhesives, which can reduce the viscosity under infrared or ultraviolet irradiation respectively, Recovers viscosity when not irradiated, thus enabling repeated use.
  • the first adhesive gel layer 313 is, for example, disposed on a side of the driving device layer 312 away from the transfer substrate 311 .
  • the first adhesive colloid layer 313 is set to cover the light-emitting device 30 correspondingly, so that the light-emitting device 30 can be debonded at a precise position with the repeatable photodissolvable glue covered thereon.
  • the first adhesive colloid layer 313 is, for example, an entire layer structure covering the driving device layer 312 away from the transfer substrate 311 , and the first adhesive colloid layer 313 covers the light emitting device 30 . Since the light emitting device 30 is a narrow light emitting device, precise debonding from a narrow light emitting area to a reusable photolytic adhesive can be realized. It can be understood that, the corresponding number of light emitting devices 30 is, for example, multiple.
  • the transfer device 30 bonds a plurality of micro-devices to be transferred through the first adhesive colloid layer 313.
  • a plurality of micro devices to be transferred are, for example, any type of micro light emitting diodes or other micro components.
  • the driving device layer 312 drives The light-emitting device 30 emits light to the reusable photolytic adhesive, so that its viscosity is reduced, so that the bonded micro-device to be transferred falls to the target substrate, thereby realizing the transfer of the micro-device. Then, after the driving device layer 312 controls the light-emitting device 30 to turn off, the photolytic adhesive can be reused to restore, so that the above operations can be repeated until all the micro devices to be transferred are transferred, thereby realizing the large-scale transfer of the micro devices.
  • the light-emitting device 30 adopts any light-emitting device provided in the aforementioned first embodiment and/or the second embodiment, the light output angle of the light-emitting device 30 is small, so that the light emitted by the light-emitting device 30 can fall on the corresponding position.
  • Repeated use of photodebonding glue on the adhesive can achieve debonding at precise positions without affecting adjacent areas, improving the transfer yield and transfer reliability of micro devices. It can be understood that when it is necessary to repair the micro devices at certain positions on the target substrate, the driving device layer 312 can also control the light emission of the corresponding target light emitting devices 30 , so as to realize the repair of the micro devices corresponding to the target positions.
  • the type of light emitted by the light-emitting device 30 is set corresponding to the material of the reusable photolytic adhesive. narrow light emitting devices.
  • the present application is not limited thereto.
  • the light emitting device transfer device 30 further includes, for example, an adhesive substrate 314 and a second adhesive gel layer 315 .
  • the second adhesive colloid layer 315 is, for example, pasted on the side of the driving device layer 312 away from the transfer substrate 311 , and covers the light emitting device 30 .
  • the bonding substrate 314 is, for example, a glass substrate, a flexible substrate and other substrate materials with good light transmission performance.
  • the adhesive substrate 314 is, for example, disposed between the first adhesive gel layer 313 and the second adhesive gel layer 315 .
  • the material of the second adhesive colloid layer 313 is, for example, a colloid material for bonding such as pressure-sensitive adhesive and water-based adhesive with good adhesive performance, which is used for bonding the adhesive substrate 314 and the light emitting device 30 .
  • the second adhesive colloid layer 315 is correspondingly covered on the light emitting device 30 or is an entire layer structure disposed on the driving device layer 312 and covering the light emitting device 30 , which is not limited in the present application.
  • the first adhesive colloid layer 313 used here is, for example, non-reusable photolytic adhesive with good adhesive performance.
  • the first adhesive colloid layer 313 can be a photolytic adhesive composed of pressure sensitive adhesive and photosensitive material, which has good viscosity before light, and loses viscosity after light, and cannot be restored.
  • the non-reusable photolytic adhesive has low cost and a wide range of choices, and it can be debonded by light, without the need to control the light color of the light-emitting device. Therefore, as shown in FIG. 13 , the third embodiment of the present application also provides a transfer device 30 using a non-reusable photolytic adhesive,
  • the process of transferring micro devices using a non-reusable photolytic adhesive transfer device 30 is as follows: first, the transfer device 30 bonds a plurality of micro devices through the first adhesive colloid layer 313 device, which is then transferred onto the target substrate.
  • the transfer device 30 drives the driving device layer 312, so that the driving device layer 312 drives the light emitting device 30 to emit light.
  • the light emitted by the light-emitting device 30 passes through the second adhesive colloid layer 315, the adhesive substrate 314 to the first adhesive colloid layer 313, so that the viscosity of the first adhesive colloid layer 313 decreases after receiving the light, resulting in its stickiness.
  • the connected microdevices are transferred to the target substrate.
  • the first adhesive layer 313 is a non-reusable photodegradable adhesive, it is necessary to peel off the adhesive substrate 314 to separate the adhesive substrate 314 and the adhesive bonded on the adhesive substrate 314 after completing a micro-LED transfer.
  • the first adhesive colloid layer 313, and then the unused adhesive substrate 314 and the first adhesive colloid layer 313 are bonded on the second adhesive colloid layer 315 away from the driving device layer 312, and the above steps are repeated to complete a large-scale transfer of microdevices.
  • an adhesive gel is disposed between the adhesive substrate 314 and the first adhesive gel layer 313 , and the viscosity of the adhesive gel does not change substantially under the irradiation of the light emitting device 30 .
  • a bonding protrusion 3131 is provided on the side of the first debonding gel layer 313 away from the bonding substrate 314 .
  • the bonding protrusions 3131 are used for bonding micro devices to be transferred.
  • the number of adhesive protrusions 3151 is multiple, and their positions correspond to the positions of the corresponding light emitting devices 30 one by one, so that the light emitted by the light emitting device 30 can pass through the second adhesive gel 315, the adhesive substrate 314, the first adhesive
  • the adhesive layer 313 reaches the bonding protrusion 3151, thereby reducing the bonding strength of the bonding protrusion 3151 and the micro-device bonded thereto, and completing the precise transfer of the micro-device.
  • the transfer device provided by the third embodiment of the present application solves the problems caused by the light emitting device in the transfer device due to the large light emitting angle and the side light emission to the adjacent light emitting device by arranging the light emitting device capable of realizing narrow light emission on the transfer device.

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Abstract

Les modes de réalisation de la présente invention concernent un dispositif électroluminescent et un appareil de transfert. Le dispositif électroluminescent comprend, par exemple : une couche fonctionnelle électroluminescente, qui comporte une surface électroluminescente ; une première électrode, qui est agencée sur un côté de la couche fonctionnelle électroluminescente, et est électriquement connectée à la couche fonctionnelle électroluminescente ; une seconde électrode, qui est disposée sur le même côté de la couche fonctionnelle électroluminescente que la première électrode, et est électriquement connectée à la couche fonctionnelle électroluminescente ; et une couche de protection contre la lumière, qui recouvre la surface électroluminescente, et comporte une sortie de lumière de telle sorte que la lumière émise par la couche fonctionnelle électroluminescente est exposée, la zone de la sortie de lumière étant plus petite que la zone de la surface électroluminescente. Dans la solution technique, une couche de protection contre la lumière ayant une sortie de lumière est disposée sur une surface électroluminescente, de telle sorte que la zone de la sortie de lumière est plus petite que la zone de la surface électroluminescente, ce qui permet d'obtenir une émission de lumière étroite du dispositif électroluminescent.
PCT/CN2021/138164 2021-12-15 2021-12-15 Dispositif électroluminescent et appareil de transfert WO2023108451A1 (fr)

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