WO2023100821A1 - 高さ調節部材、熱処理装置および静電チャック装置 - Google Patents

高さ調節部材、熱処理装置および静電チャック装置 Download PDF

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Publication number
WO2023100821A1
WO2023100821A1 PCT/JP2022/043825 JP2022043825W WO2023100821A1 WO 2023100821 A1 WO2023100821 A1 WO 2023100821A1 JP 2022043825 W JP2022043825 W JP 2022043825W WO 2023100821 A1 WO2023100821 A1 WO 2023100821A1
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Prior art keywords
height adjustment
dlc film
member according
adjustment member
less
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PCT/JP2022/043825
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English (en)
French (fr)
Japanese (ja)
Inventor
浩 浜島
美恵子 八嶋
憲一 古舘
Original Assignee
京セラ株式会社
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Priority to CN202280077892.8A priority Critical patent/CN118302847A/zh
Priority to KR1020247016350A priority patent/KR20240093736A/ko
Priority to JP2023564972A priority patent/JPWO2023100821A1/ja
Publication of WO2023100821A1 publication Critical patent/WO2023100821A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Definitions

  • a heat treatment apparatus has been used for heat-treating workpieces such as semiconductor wafers and LCD substrates on a mounting table.
  • Such a heat treatment apparatus is provided with a height adjusting member (plunger and gap pin) for supporting an object to be processed such as a semiconductor wafer or an LCD substrate, as described in Patent Document 1, for example. .
  • a height adjustment member includes a base and a support portion located on the upper surface of the base and having a facing surface facing a supported body. At least the supporting portion contains ceramics containing silicon carbide, silicon carbonitride or sialon as a main component. It has a plurality of closed pores, and the value (C) obtained by subtracting the average circle-equivalent diameter (B) of the closed pores from the average distance (A) between the centers of gravity of adjacent closed pores is 50 ⁇ m or more and 170 ⁇ m or less.
  • a heat treatment apparatus includes a mounting table and the height adjustment member.
  • a height adjusting member is provided on the mounting table so that the supported body is mounted on the mounting table with a gap therebetween.
  • An electrostatic chuck device includes a mounting table and a focus ring positioned around the mounting table.
  • a focus ring includes a fixed portion provided along the circumference and a movable portion provided concentrically with the fixed portion and displaceable in the vertical direction.
  • the height adjusting member is positioned on the upper surface of the fixed portion.
  • FIG. 11 is a partial cross-sectional view showing a height adjustment member attached to a support plate according to an embodiment of the present disclosure
  • FIG. 12 is a perspective view of a height adjustment member according to an embodiment of the present disclosure
  • FIG. 12 is a side view of a height adjustment member according to an embodiment of the present disclosure
  • 4 is a micrograph showing a polished surface obtained by polishing a cross-section of a height adjustment member according to an embodiment of the present disclosure
  • 5 is an enlarged micrograph of the region X shown in FIG. 4, showing the distances x1, x2, and x3 between the centers of gravity of adjacent closed pores.
  • 5 is an enlarged micrograph of the region X shown in FIG.
  • FIG. 4 is a photomicrograph showing a surface obtained by polishing and etching a cross-section of a height adjustment member according to an embodiment of the present disclosure
  • 1 is a cross-sectional view showing a heat treatment apparatus according to an embodiment of the present disclosure
  • FIG. 8 is an enlarged cross-sectional view of a region Y shown in FIG. 7
  • FIG. 3 is a perspective view showing a state in which a supported body is placed on the placing table of the electrostatic chuck device according to the embodiment of the present disclosure
  • FIG. 4 is a perspective view showing a state in which a supported body is lifted from the mounting table of the electrostatic chuck device according to the embodiment of the present disclosure;
  • FIG. 1 is a partial cross-sectional view showing a height adjustment member 1 attached to a support plate 4 according to an embodiment of the present disclosure.
  • FIG. 2 is a perspective view showing the height adjustment member 1 according to one embodiment of the present disclosure.
  • the height adjustment member 1 shown in FIG. 2 includes a base portion 2 and a support portion 3 .
  • the height adjustment member 1 includes a plunger 1a and gap pins attached to a support plate 4 for supporting a supported body W such as a Si substrate, SiC substrate, or GaN substrate in the processing space. 1b.
  • the support plate 4 is disc-shaped and has a heater for heating the body W to be supported therein.
  • the plunger 1a includes a base portion 2a and a support portion 3a located on the upper surface of the base portion 2a and having a facing surface facing the supported body.
  • the gap pin 1b includes a base portion 2b and a support portion 3b located on the upper surface of the base portion 2b and having a facing surface facing the body W to be supported.
  • the plunger 1a is placed below the plunger 1a between a first position P1 on the same height as the top surface of the gap pin 1b and a second position P2 above the first position P1. It can be vertically moved by an elastic member 5 such as a spring.
  • the plunger 1a can support the supported body W at either the first position P1 or the second position P2.
  • the gap pins 1b are provided with a constant distance from the support plate 4 by supporting the supported body W at the first position P1. can be suppressed.
  • a plurality of gap pins 1b are fixed to the support plate 4 at predetermined intervals along the circumferential direction, for example, by bonding.
  • the support plate 4 has a circumferential groove 6 inside, and a plurality of plungers 1a are installed in the groove 6 at predetermined intervals.
  • stepped portions 8 for mounting an annular sealing member 7 surrounding the base portion 2a are provided along the circumferential direction of the groove 6 at predetermined intervals.
  • the stepped portion 8 has a circular cross section perpendicular to the axial direction and has a diameter larger than the width of the groove 6 .
  • the plunger 1a has a through hole 1a1 along its axis and communicates with the groove 6. As shown in FIG. The interior of the through hole 1a1 and the groove 6 is evacuated by an exhaust means such as a vacuum pump through the channel 9 connected to the groove 6, so that the object W to be supported can be adsorbed and fixed.
  • an exhaust means such as a vacuum pump
  • the base 2 is a member having a flat plate shape, and the base 2 shown in FIG. 2 has a circular shape when viewed from above.
  • the base portion 2 is a member for fixing the support portion 3, which will be described later, and is made of ceramics, for example. Ceramics are not limited, and examples thereof include ceramics containing silicon carbide, silicon carbonitride, silicon nitride, or sialon as a main component.
  • main component means a component that accounts for 80% by mass or more of the total 100% by mass of the components that make up the ceramics.
  • the components that make up the ceramics can be identified by an X-ray diffractometer (XRD) using CuK ⁇ rays.
  • XRD X-ray diffractometer
  • the content of each component can be determined by, for example, an ICP (Inductively Coupled Plasma) emission spectrometer or a fluorescent X-ray spectrometer.
  • the size of the base 2 is appropriately set according to, for example, the size of the device including the height adjustment member 1.
  • the diameter of the base 2a is, for example, 3.5 mm or more and 6.5 mm or less.
  • the height of the base 2a is, for example, 2 mm or more and 4.4 mm or less.
  • the diameter of the base 2b (D1 in FIG. 3) is, for example, 3.5 mm or more and 6.5 mm or less.
  • the height of the base portion 2b (H1 in FIG. 3) is, for example, 0.5 mm or more and 1.1 mm or less.
  • the support part 3 is, for example, a member having a cylindrical shape or a columnar shape.
  • the support part 3a shown in FIG. 1 has a cylindrical shape, and the support part 3b has a columnar shape.
  • the supporting portion 3 is a member for supporting the object W to be supported, and is made of ceramics containing silicon carbide, silicon carbonitride, silicon nitride or sialon as a main component (hereinafter, ceramics containing these components as a main component is used for convenience). It is sometimes called non-oxide ceramics.).
  • non-oxide ceramics have a small average coefficient of linear expansion.
  • the average coefficient of linear expansion of non-oxide ceramics at 40° C. to 400° C. is, for example, 2 to 4 ⁇ 10 ⁇ 6 /K, and this average linear expansion coefficient is determined according to, for example, JIS R 1618:2002. be able to.
  • the support portion 3 may be formed of ceramics having the same main component as that of the base portion 2 described above, or may be formed of ceramics having a different main component. Normally, the support portion 3 and the base portion 2 are integrally formed of ceramics having the same main component.
  • the size of the support portion 3 is appropriately set according to, for example, the size of the device including the height adjustment member 1 .
  • the diameter of the support portion 3a is, for example, 2 mm or more and 3 mm or less.
  • the height of the support portion 3a is, for example, 4.8 mm or more and 7.2 mm or less.
  • the diameter of the supporting portion 3b (D2 in FIG. 3) is, for example, 2 mm or more and 3 mm or less.
  • the height (H2 in FIG. 3) of the support portion 3b is, for example, 1.2 mm or more and 1.8 mm or less.
  • the height adjusting member 1 has a plurality of closed pores 41, as shown in FIG.
  • FIG. 4 is a micrograph showing a polished surface obtained by polishing a cross section of the height adjusting member 1 according to one embodiment.
  • 5A and 5B are enlarged micrographs of region X in FIG. 4, showing the distances x1, x2, and x3 between the centers of gravity of adjacent closed pores and the equivalent circle diameters d1, d2, and d3 of adjacent closed pores, respectively. ing.
  • the value (C) obtained by subtracting the average value (B) of the equivalent circle diameters d1, d2, d3, . . . of .
  • the setting conditions for this method are, for example, a threshold of 156, which is an index indicating the brightness of an image, a dark brightness, a small figure removal area of 20 ⁇ m 2 , and no noise removal filter.
  • the threshold value can be adjusted according to the brightness of the observation image.
  • the threshold may be adjusted so that the marker appearing in the image matches the shape of the closed pore 41 .
  • the kurtosis Ku of the distance between the centers of gravity of the closed pores 41 may be 0.3 or more and 4 or less.
  • the kurtosis Ku of the distances between the centers of gravity of the closed pores 41 is 0.3 or more, the variation in the distances between the centers of gravity of the closed pores 41 is reduced (that is, the distribution of the distances between the centers of gravity of the closed pores 41 is narrowed).
  • the kurtosis Ku of the distance between the centers of gravity of the closed pores 41 is 4 or less, the closed pores 41 extremely separated from each other do not exist. As a result, thermal shock resistance can be further improved.
  • Non-oxide ceramics may have coarse grains 42 as shown in FIG.
  • coarse crystal grains means crystal grains having an area of 1000 ⁇ m 2 or more.
  • the proportion of the coarse crystal grains 42 is not limited, and for example, the area of the coarse grain crystal grains 42 may be 6 area % or more and 15 area % or less.
  • the area of the coarse crystal grains 42 is 6 area % or more, even if fine cracks occur due to thermal shock, the coarse grain crystal grains 42 can prevent the cracks from propagating.
  • the area of the coarse grain crystal grains 42 is 15 area % or less, the mechanical properties (strength, rigidity, fracture toughness, etc.) can be improved.
  • the polished surface of the ceramic is etched by immersing the ceramic for 20 seconds in a heated and melted solution containing sodium hydroxide and potassium nitrate at a mass ratio of 1:1.
  • This etched surface is broadly observed using an optical microscope at a magnification of 50 times, and a surface on which coarse crystal grains 42 and fine crystal grains 43 are evenly present is selected.
  • the surface area may be, for example, 2.7 ⁇ 10 ⁇ 2 ⁇ m 2 (horizontal length is 0.19 ⁇ m, vertical length is 0.14 ⁇ m).
  • the average value (D) of the circle-equivalent diameters of the fine crystal grains 43 shown in FIG. 6 is, for example, 8 ⁇ m or less. Crystal grains having a grain size greater than 8 ⁇ m and an area less than 170 ⁇ m 2 may be present.
  • the facing surface 3c of the support portion 3 has fine crystal grains and open pores.
  • the average value (D) of the equivalent circle diameters of the fine crystal grains on the facing surface 3c may be smaller than the average value (E) of the equivalent circle diameters of the open pores.
  • E average value of the equivalent circle diameters of the open pores.
  • the average value (D) of the equivalent circle diameters of the fine crystal grains is not limited as long as it is smaller than the average value (E) of the equivalent circle diameters of the open pores.
  • the difference between the average equivalent circle diameter (D) of the fine crystal grains and the average equivalent circle diameter (E) of the open pores may be, for example, 5 ⁇ m or more, and the upper limit may be 29 ⁇ m.
  • fine grains means grains having an equivalent circle diameter of 8 ⁇ m or less.
  • a diamond-like carbon (DLC) film may be positioned at least on the facing surface 3c of the supporting portion 3.
  • DLC is a material positioned between diamond and graphite.
  • the DLC film may further contain at least one of argon, helium and hydrogen. In particular, when hydrogen is included, a DLC film having improved heat resistance and corrosion resistance can be obtained.
  • a DLC film may be identified using a Raman spectrometer.
  • the DLC film may also be positioned on the side surface 3d of the support portion 3. If the DLC film is also positioned on the side surface 3d of the supporting portion 3, the same effects as those described above can be obtained.
  • the thickness of the DLC film on the facing surface 3c is, for example, 0.5 ⁇ m or more and 3 ⁇ m or less.
  • the difference between the thickness of the DLC film on the facing surface 3c and the thickness of the DLC film on the side surface 3d may be, for example, 0.01 ⁇ m or more and 0.8 ⁇ m or less.
  • the DLC film may have multiple open pores.
  • the value (H) obtained by subtracting the average circle-equivalent diameter (G) of the open pores from the average distance between the centers of gravity of adjacent open pores (F) is the value (C).
  • the value (H) obtained by subtracting the average circle-equivalent diameter (G) of the open pores from the average distance between the centers of gravity of adjacent open pores (F) is the value (C).
  • the open pores of the DLC film are sparsely scattered. As a result, particles generated from inside the open pores can be reduced.
  • the base 2 may have an annular flange.
  • the DLC film may be positioned on the annular surface 2 c of the flange (base) 2 .
  • radiant heat from the annular surface 2c is reduced.
  • the expansion of the members installed around the flange (base) 2 can be reduced.
  • the DLC film may also be positioned on the side surface 2d of the collar portion 2. If the DLC film is also positioned on the side surface 2d of the collar portion 2, the same effects as those described above can be obtained.
  • the DLC film located on the annular surface 2c of the collar portion 2 may be thicker than the DLC film located on the side surface 2d of the collar portion 2.
  • Such a configuration enhances the heat shielding effect of the annular surface 2c.
  • the side surface 2d of the collar portion 2 is a curved surface.
  • the collar portion 2 is square plate-shaped, it has an intersection line where the side surfaces 2d of the collar portion 2 intersect. In either case, the DLC film on the side surface 2d of the flange 2 is more likely to accumulate internal stress than the DLC film on the annular surface 2c.
  • the thickness of the DLC film on the side surface 2d of the flange 2 is smaller than the thickness of the DLC film on the annular surface 2c, an increase in the accumulation of internal stress can be suppressed, so that it can be used for a long period of time.
  • the thickness of the DLC film on the annular surface 2c is, for example, 0.5 ⁇ m or more and 3 ⁇ m or less.
  • the difference between the thickness of the DLC film on the annular surface 2c and the thickness of the DLC film on the side surface 2d may be, for example, 0.01 ⁇ m or more and 0.8 ⁇ m or less.
  • the method of manufacturing the height adjustment member 1 is not limited, and the height adjustment member 1 is manufactured, for example, by the following procedure.
  • the main component of the ceramics forming the height adjustment member 1 is silicon carbide, for example, an ⁇ -type silicon carbide powder having an average particle size (D 50 ) of 0.5 ⁇ m or more and 2 ⁇ m or less, and a sintering aid
  • D 50 average particle size
  • a hydrophobic pore-forming agent consisting of resin beads and a pore-dispersing agent for dispersing the pore-forming agent are prepared. These raw materials are then wet-mixed and pulverized by a barrel mill, rotary mill, vibration mill, bead mill, attritor, or the like to form a slurry.
  • a dispersant that disperses the silicon carbide powder may be added.
  • Pore-forming agents are, for example, silicone beads and suspension-polymerized crosslinkable resin beads composed of at least one of polyacrylic or polystyrene.
  • the content of the pore forming agent is added to 100 parts by mass of ⁇ -silicon carbide powder.
  • it should be 1.2 parts by mass or more and 1.76 parts by mass or less
  • the average particle size (D 50 ) should be 36 ⁇ m or more and 45 ⁇ m or less, particularly 40 ⁇ m or more and 45 ⁇ m or less.
  • the content of the pore-forming agent is preferably 1.2 parts by mass or more and 1.38 parts by mass or less with respect to 100 parts by mass of the ⁇ -silicon carbide powder.
  • a pore dispersing agent is used to disperse the pore forming agent.
  • pore dispersing agents include anionic surfactants such as carboxylates, sulfonates, sulfates, and phosphates. Adsorption of the anionic surfactant to the pore-forming agent facilitates wetting and penetration of the pore-forming agent into the slurry. Furthermore, aggregation of the pore-forming agent is further suppressed by charge repulsion of the hydrophilic group of the anionic surfactant. Therefore, the pore-forming agent can be sufficiently dispersed in the slurry without agglomeration. Anionic surfactants are highly effective in wetting and penetrating the pore former into the slurry.
  • the pore dispersing agent may be added in an amount of 0.14 parts by mass or more and 0.24 parts by mass or less per 100 parts by mass of the pore forming agent.
  • binders such as celluloses such as methyl cellulose and carboxymethyl cellulose and modified products thereof, sugars, starches, dextrin and various modified products thereof, various water-soluble synthetic resins such as polyvinyl alcohol and vinyl acetate are added.
  • a synthetic resin emulsion, gum arabic, casein, alginate, glucomannan, glycerin, sorbitan fatty acid ester, etc. are added and mixed, and then spray-dried to obtain granules. Most of the obtained granules are in a state in which the pore-forming agent is encapsulated.
  • the granules are filled in a mold, and the granules are pressed at a molding pressure of 78 MPa or more and 128 MPa or less using a uniaxial press molding device or a cold isostatic press molding device, and the raw density is, for example, 1.8 g / cm.
  • a molded body that is the base of the height adjusting member 1 having a weight of 3 or more and 1.95 g/cm 3 or less is obtained.
  • the height adjusting member 1 is a plunger 1a
  • a pilot hole for the through hole may be formed by cutting.
  • This molded body is degreased in a nitrogen atmosphere at a temperature of 450 to 650° C. for a holding time of 2 to 10 hours to obtain a degreased body.
  • this height adjusting member 1 By heat-treating this height adjusting member 1 at a temperature of 1800° C. or more and 2100° C. or less in a high-pressure nitrogen atmosphere, the height adjusting member 1 made of ceramics whose main component is silicon carbonitride can be obtained.
  • the pressure of nitrogen is, for example, 150 MPa or more and 200 MPa or less.
  • the heat treatment should be performed so that the mass of the height adjustment member 1 after heat treatment increases by 6 mass % or more and 10 mass % or less with respect to the mass of the height adjustment member 1 before heat treatment. This is because the production of silicon nitride increases and the thermal conductivity decreases.
  • the main component of the ceramics forming the height adjusting member 1 is silicon nitride
  • a hydrophobic pore-forming agent consisting of resin beads, and a pore-dispersing agent for dispersing the pore-forming agent are wet-mixed and pulverized using a barrel mill, rotary mill, vibration mill, bead mill or attritor, etc. to make a slurry.
  • the total amount of each powder of calcium oxide, aluminum oxide and oxides of rare earth elements is 3% by mass or more when the total of the powder of silicon nitride and the powder of these sintering aids is taken as 100% by mass. It may be made to be 19.2% by mass or less.
  • the content of calcium oxide and aluminum oxide in the total 100% by mass of the sintering aid is 0.3% by mass or more and 1.5% by mass or less, and 14.2% by mass or more and 48.8% by mass or less, The remainder may be an oxide of a rare earth element. 0.02 parts by mass or more and 3 parts by mass or less of ferric oxide powder in terms of Fe may be added to a total of 100 parts by mass of the silicon nitride powder and these sintering aid powders.
  • the powder of ferric oxide reacts with silicon nitride, which is the main phase, during firing, which will be described later, to desorb oxygen and form iron silicide.
  • the ⁇ conversion rate of silicon nitride powder affects the mechanical strength and fracture toughness of ceramics containing silicon nitride as the main component (hereinafter the mechanical strength and fracture toughness are referred to as mechanical properties).
  • the reason for using silicon nitride powder with a ⁇ -conversion rate of 40% or less is that the mechanical properties can be enhanced.
  • a silicon nitride powder with a ⁇ -conversion rate of more than 40% tends to become grain growth nuclei in the firing process, and tends to form coarse crystals with a small aspect ratio, which may degrade the mechanical properties. Therefore, it is particularly preferable to use a silicon nitride powder having a ⁇ conversion rate of 10% or less.
  • the ⁇ conversion rate of the sialon powder is also the same as described above. If a sialon powder with a ⁇ -conversion rate of 10% or less is used, the solid solution amount z can be made 0.1 or more.
  • the powder of silicon nitride or sialon is pulverized until the particle size (D 90 ) at which the cumulative volume is 90% when the sum of the cumulative volumes of the particle size distribution curve is 100% is 3 ⁇ m or less. It is good from the point of view of the improvement of the crystal structure and the needle-like crystal structure.
  • the particle size distribution obtained by pulverization can be adjusted by adjusting the outer diameter of the media, the amount of media, the viscosity of the slurry, the pulverization time, and the like.
  • the content of the above-mentioned pore forming agent is adjusted to 100% of silicon nitride or sialon powder. It may be 1.2 parts by mass or more and 1.38 parts by mass or less, and the average particle size (D 50 ) may be 36 ⁇ m or more and 45 ⁇ m or less, particularly 40 ⁇ m or more and 45 ⁇ m or less.
  • a dispersant may be added to reduce the viscosity of the slurry.
  • a powder having a particle size (D 50 ) of 1 ⁇ m or less which makes up 50% of the cumulative volume in advance.
  • a binder such as paraffin wax, polyvinyl alcohol (PVA), or polyethylene glycol (PEG)
  • PVA polyvinyl alcohol
  • PEG polyethylene glycol
  • the resulting slurry is passed through a mesh finer than 200 mesh as described in ASTM E 11-61 and then spray dried to obtain granules.
  • the granules are filled in a mold, molded and degreased in the same manner as described above to obtain a degreased body.
  • the degreased body is placed in a firing furnace equipped with a graphite resistance heating element and fired.
  • a common material containing components such as calcium oxide, aluminum oxide and oxides of rare earth elements may be placed in the firing furnace.
  • the temperature is raised from room temperature to 300° C. to 1000° C. in a vacuum atmosphere, and then nitrogen gas is introduced to maintain the nitrogen partial pressure at 50 kPa or more and 300 kPa or less.
  • the temperature is raised to precipitate ⁇ -sialon in a temperature range of about 1400 ° C. or higher, and the temperature is kept at 1700 ° C. or higher and lower than 1800 ° C. for 3 hours or more and 5 hours or less, so that the main component is silicon nitride or sialon.
  • a height adjusting member 1 made of ceramics is obtained.
  • a method of arranging the compact if a method of burying the compact in a powder containing silicon nitride or silicon carbide as a main component is used, it can be fired in the air in an electric furnace. When such a method is used, oxygen contained in the atmosphere is cut off by embedding the molded body in the powder containing silicon nitride or silicon carbide as a main component, and the firing atmosphere becomes substantially a nitrogen atmosphere.
  • silicon nitride powder was used, but the silicon nitride powder was replaced with a powder obtained by mixing silicon powder and silicon nitride powder (hereinafter sometimes referred to as mixed powder), and the reaction A method using sintering may also be used.
  • the mixed powder is preferably mixed with silicon powder at a mass ratio of 1 to 10 times, particularly 4 to 5.8 times, that of silicon nitride powder.
  • a step of nitriding silicon is required before firing. This step is a step of nitriding silicon in a nitrogen atmosphere at a temperature of 1100° C. or more and 1200° C. or less for a holding time of 6 hours or more and 8 hours or less.
  • the method described above may be used by replacing it with a powder in which silicon powder and sialon powder are mixed.
  • the facing surface 3c of the support portion 3 may be subjected to polishing. Polishing is performed, for example, by brush polishing, buffing, magnetic fluid polishing, or the like.
  • polishing is performed for 30 minutes or more and 60 minutes or less while rotating a roll in which brushes having a length of about 10 mm are bundled at about 50 rpm or more and 200 rpm or less.
  • abrasive a paste obtained by adding diamond powder to fats and oils is used, and this paste is applied to the brush in advance.
  • the average particle size of diamond powder is, for example, 0.5 ⁇ m or more and 6 ⁇ m or less.
  • a pulsed high-frequency discharge voltage of 13.56 MHz was applied to the height adjustment member before film formation placed in a low-pressure hydrocarbon gas atmosphere, thereby removing ion species in the hydrocarbon gas plasma. generate.
  • a negative high voltage pulse discharge voltage is applied to the height adjustment member in the afterglow plasma, and the height adjustment member is bombarded with ions, thereby forming a support surface made of the DLC film, a side surface of the support portion, and a base portion. , the annular surface of the base, the side surface of the base, etc. can be obtained.
  • Plasma cleaning treatment should be performed using ions such as argon, helium, and hydrogen before generating ion species in the hydrocarbon gas plasma.
  • This plasma cleaning treatment can remove impurities adhering to the supporting portion and the base portion, so that a DLC film having higher adhesion to the supporting portion and the base portion can be obtained.
  • the height adjustment member 1 is adopted as one member of various industrial devices.
  • industrial equipment include heat treatment equipment, electrostatic chuck equipment, inspection equipment for semiconductor substrates, and developing equipment.
  • the heat treatment apparatus includes, for example, a mounting table and a height adjustment member 1 according to one embodiment.
  • the height adjusting member 1 according to one embodiment is provided on the mounting table so that the object to be supported is mounted on the mounting table with a gap therebetween.
  • the heat treatment apparatus will be described in more detail with reference to FIGS. 7 and 8.
  • FIG. 7 is a cross-sectional view showing a heat treatment apparatus according to an embodiment of the present disclosure
  • FIG. 8 is an enlarged cross-sectional view of region Y in FIG.
  • the shutter 14 is raised or lowered by the operation of the cylinder 15.
  • the shutter 14 contacts a stopper 17 attached to the lower portion of the cover 16, and the processing chamber 11 becomes a closed space.
  • the stopper 17 is provided with an air supply port, and the air that has flowed into the processing chamber 11 through this air supply port is discharged from an exhaust port 18 formed in the upper center of the processing chamber 11 .
  • the wafer W can be heat-treated at a predetermined temperature without the air flowing in from the air supply port coming into direct contact with the wafer W.
  • the mounting table 12 has a disc shape larger than the wafer W, and has a built-in heater 19 for heating the wafer W.
  • the height adjusting member 1 is provided on the mounting table 12 so that the wafer W is mounted on the mounting table 12 with a gap therebetween. Suppress adhesion.
  • the height adjustment member 1 includes a base 2 mounted in a concave portion 12a provided on the mounting surface of a mounting table 12, and a support portion provided on the upper surface of the base 2 for supporting the wafer W. 3.
  • the difference between the heat applied to the wafer W from the height adjusting member 1 and the heat applied to the wafer W from the mounting surface of the mounting table 12 is made small.
  • the holding member 20 is embedded in the space S above the base 2 in the recess 12a so that the thermal gradient between the mounting table 12 and the height adjusting member 1 is reduced.
  • the holding member 20 may be made of the same material as the mounting table 12 . Other materials may be used as long as they have the same thermal conductivity as the mounting table 12 .
  • a gap between the mounting table 12 and the wafer W is, for example, 0.1 mm or more and 0.3 mm or less.
  • the lower part of the lift pin 13 is fixed to a connecting guide 22 , and the connecting guide 22 is connected to a timing belt 23 .
  • the timing belt 23 is wound around a driving pulley 25 driven by a stepping motor 24 and a driven pulley 26 arranged above the driving pulley 25 .
  • the lift pins 13 move up or down in the through-holes 21 provided in the mounting table 12 in the circumferential direction to support the wafer W at the position indicated by the two-dot chain line.
  • a wafer W can be mounted on the mounting table 12 .
  • the electrostatic chuck device includes, for example, a mounting table, a focus ring, and a height adjustment member 1 according to one embodiment.
  • the focus ring is positioned around the mounting table.
  • the focus ring includes a fixed portion provided along the circumference and a movable portion provided concentrically with the fixed portion and displaceable in the vertical direction.
  • a height adjusting member 1 according to one embodiment is provided on the upper surface of this fixed portion.
  • FIG. 9 is a perspective view showing a state in which a supported body is mounted on the mounting table of the electrostatic chuck device according to one embodiment of the present disclosure.
  • FIG. 10 is a perspective view showing a state in which a supported body is lifted from the mounting table of the electrostatic chuck device according to the embodiment of the present disclosure;
  • the electrostatic chuck device 30 shown in FIGS. 9 and 10 has a holding portion 32 on which a mounting table 31 is mounted.
  • the mounting table 31 has a mounting surface 31a on which the wafer W is mounted.
  • the holding part 32 is disc-shaped and arranged on the side opposite to the mounting table 31 (below the electrostatic adsorption electrode).
  • the holding unit 32 cools the mounting table 31 and adjusts it to a desired temperature.
  • the holding part 32 has a channel for circulating water therein.
  • the holding portion 32 is made of, for example, aluminum, aluminum alloy, copper, copper alloy, stainless steel (SUS), titanium, or the like.
  • an insulating film such as aluminum oxide is formed on at least the surface of the holding part 32 exposed to the plasma.
  • the focus ring 33 includes an upper ring 34 positioned above and a lower ring 35 positioned below the upper ring 34 .
  • the upper ring 34 includes a fixed portion 37 provided along the circumference and a movable portion 36 provided concentrically with the fixed portion 37 and displaceable in the vertical direction.
  • the movable part 36 is lifted to lift the wafer W.
  • the lower surface of the movable portion 36 is provided with a positioning hole into which the height adjusting member 1 provided on the upper surface of the lower ring 35 is fitted.
  • the movable portion 36 is positioned on the lower ring 35 when the movable portion 36 descends together with the lift pins 38 .
  • the fixed part 37 is fixed to the lower ring 35 .
  • the movable part 36 has openings 36b that are open at both ends, and is C-shaped in plan view.
  • the fixed portion 37 is positioned inside the opening portion 36b in plan view.
  • the movable portion 36 is in contact with the fixed portion 37 at both ends in the circumferential direction.
  • the opening 36b of the movable portion 36 is open.
  • a transfer mechanism such as a transfer arm for transferring the wafer W can be inserted into the opening 36b from the outside in the radial direction.
  • the movable portion 36 has first surfaces 36a at both ends in the circumferential direction that are inclined downward.
  • the fixed portion 37 has second surfaces 37a that are inclined upward at both ends in the circumferential direction.
  • the first surface 36a and the second surface 37a overlap each other in the vertical direction due to their inclined surfaces.
  • the opposing surfaces of the movable portion 36 and the fixed portion 37 extend obliquely. If the facing surface extends obliquely, the path through which the plasma penetrates becomes longer, so the penetration of the plasma into the gap between the movable portion 36 and the fixed portion 37 is suppressed.
  • the inclination angle of the first surface 36a and the second surface 37a with respect to the horizontal direction is preferably 45° or less.
  • the base portion 2 has a circular shape when viewed from above.
  • the base 2 is not limited to a circular shape.
  • the base 2 may have an elliptical shape in plan view, or may have a polygonal shape such as a triangular, quadrangular, pentagonal, or hexagonal shape, depending on the desired application.
  • the support portion 3 is also not limited to a cylindrical shape.
  • the support portion 3 may have an elliptical columnar shape, or may have a prismatic shape such as a triangular columnar shape, a square columnar shape, a pentagonal columnar shape, a hexagonal columnar shape, or a shape other than a columnar shape. may have
  • the method of manufacturing the height adjustment member 1 described above describes a method of integrally molding the base portion 2 and the support portion 3 .
  • the height adjustment member according to the present disclosure may be manufactured by molding the base 2 and the support 3 separately, firing them, and then joining the base 2 and the support 3 together.
  • the bonding method is not limited, and examples thereof include diffusion bonding.
  • the content and average particle size (D 50 ) of the pore-forming agent with respect to 100 parts by mass of ⁇ -type silicon carbide powder were as shown in Table 1. Furthermore, 0.2% by mass of sodium polycarboxylate as a pore dispersing agent was added to each sample with respect to 100% by mass of the pore forming agent to prepare raw materials. Each sample of this prepared raw material was put into a ball mill and then mixed for 48 hours to form a slurry. A binder was added to this slurry, mixed, and then spray-dried to obtain granules of silicon carbide having an average particle size of 80 ⁇ m.
  • the granules were filled into a mold and pressed in the thickness direction with a pressure of 98 MPa to form a compact.
  • the resulting compact was heated in a nitrogen atmosphere for 20 hours, held at 600° C. for 5 hours, and then naturally cooled and degreased to obtain a degreased compact.
  • the degreased bodies were held in a vacuum atmosphere at 2030° C. for 5 hours to obtain disc-shaped and prism-shaped samples made of ceramics containing silicon carbide as a main component.

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  • Computer Hardware Design (AREA)
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PCT/JP2022/043825 2021-11-30 2022-11-28 高さ調節部材、熱処理装置および静電チャック装置 WO2023100821A1 (ja)

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KR1020247016350A KR20240093736A (ko) 2021-11-30 2022-11-28 높이 조절 부재, 열처리 장치 및 정전 척 장치
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JP2023097473A (ja) * 2021-12-28 2023-07-10 株式会社ディスコ 保持テーブル、それを備える加工装置、及び、加工方法

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JP2004259974A (ja) * 2003-02-26 2004-09-16 Kyocera Corp リフトピン
JP2015094002A (ja) * 2013-11-12 2015-05-18 テクノクオーツ株式会社 基板保持盤およびその製造方法
JP2015126208A (ja) * 2013-12-27 2015-07-06 株式会社日本セラテック 真空吸着装置およびその製造方法
JP2016092129A (ja) * 2014-10-31 2016-05-23 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法
WO2020111209A1 (ja) * 2018-11-29 2020-06-04 京セラ株式会社 撹拌棒および撹拌装置
WO2021157722A1 (ja) * 2020-02-07 2021-08-12 京セラ株式会社 ウェハーボート

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JP6741548B2 (ja) * 2016-10-14 2020-08-19 日本碍子株式会社 半導体製造装置用部材及びその製法
KR102379016B1 (ko) 2019-10-31 2022-03-28 세메스 주식회사 지지 유닛, 이를 포함하는 기판 처리 장치 및 이를 이용하는 기판 처리 방법

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JP2004259974A (ja) * 2003-02-26 2004-09-16 Kyocera Corp リフトピン
JP2015094002A (ja) * 2013-11-12 2015-05-18 テクノクオーツ株式会社 基板保持盤およびその製造方法
JP2015126208A (ja) * 2013-12-27 2015-07-06 株式会社日本セラテック 真空吸着装置およびその製造方法
JP2016092129A (ja) * 2014-10-31 2016-05-23 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法
WO2020111209A1 (ja) * 2018-11-29 2020-06-04 京セラ株式会社 撹拌棒および撹拌装置
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JP2023097473A (ja) * 2021-12-28 2023-07-10 株式会社ディスコ 保持テーブル、それを備える加工装置、及び、加工方法

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TWI850883B (zh) 2024-08-01

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