WO2023070443A1 - 二极管芯片的封装结构及方法、测距装置、可移动平台 - Google Patents

二极管芯片的封装结构及方法、测距装置、可移动平台 Download PDF

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Publication number
WO2023070443A1
WO2023070443A1 PCT/CN2021/127053 CN2021127053W WO2023070443A1 WO 2023070443 A1 WO2023070443 A1 WO 2023070443A1 CN 2021127053 W CN2021127053 W CN 2021127053W WO 2023070443 A1 WO2023070443 A1 WO 2023070443A1
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WIPO (PCT)
Prior art keywords
diode chip
package
substrate
light
photosensitive area
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PCT/CN2021/127053
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English (en)
French (fr)
Inventor
郑国光
詹亮
王国才
刘祥
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深圳市大疆创新科技有限公司
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Priority to PCT/CN2021/127053 priority Critical patent/WO2023070443A1/zh
Publication of WO2023070443A1 publication Critical patent/WO2023070443A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

  • the present application relates to the field of integrated circuits, and more specifically relates to a diode chip packaging structure and method, a distance measuring device, and a movable platform.
  • Such as laser radar, range finder and other distance detection equipment based on TOF principle including avalanche diode (Avalanche Photo Diode, APD for short) and laser diode and other diodes, among which avalanche diode is widely used for weak light detection, and laser diode is used for emission Laser Pulse Sequence.
  • avalanche diode Avalanche Photo Diode, APD for short
  • laser diode and other diodes among which avalanche diode is widely used for weak light detection, and laser diode is used for emission Laser Pulse Sequence.
  • Leaded ceramic chip carrier (CLCC) package, metal TO package and transparent plastic package are several commonly used packaging methods.
  • TO package technology refers to transistor outline (Transistor Outline) or through-hole (Through-hole) package Technology, that is, fully enclosed packaging technology, but these packaging methods have their own disadvantages.
  • CLCC packaging has high cost
  • metal TO packaging has low packaging efficiency and high cost, and cannot be applied to Surface Mounted Technology (Surface Mounted Technology, SMT)
  • SMT Surface Mounted Technology
  • the transparent plastic packaging technology is difficult to package and prone to warping, as shown in Figure 1 and Figure 2, which will lead to problems such as delamination between the diode chip and the substrate, the bonding wire is pulled off, and the film cannot be cut.
  • the present application has been made to solve at least one of the above-mentioned problems.
  • the first aspect of the present application provides a packaging structure of a diode chip, including: a substrate including a first surface and a second surface opposite to the first surface; a diode chip, the diode chip including a photosensitive area and a non-photosensitive area located outside the photosensitive area , the photosensitive area is a light-emitting area for emitting light or a light-receiving area for receiving light, the photosensitive area and the non-photosensitive area are located on the first side of the diode chip, and the second side of the diode chip is arranged on the first surface of the substrate.
  • the two sides are opposite to the first side; the first package body covers at least the photosensitive area of the diode chip, and the first package body is a transparent insulating material; the second package body is located on the first surface of the substrate, and the second package body is connected to the first package body. At least some of the edges of the packages are abutted, and the second package includes a non-transparent insulating material.
  • the second aspect of the present application provides a method for packaging a diode chip, the method comprising:
  • a substrate comprising a first surface and a second surface opposite the first surface
  • a second package body is formed on the periphery of the first surface of the substrate for setting the diode chip area, the second package body has an opening, and the second package body includes a non-transparent insulating material;
  • a diode chip comprising a photosensitive area and a non-photosensitive area located outside the photosensitive area, the photosensitive area and the non-photosensitive area are located on a first side of the diode chip, and attaching the second side of the diode chip Installed on the first surface of the substrate, the photosensitive area is a light emitting area for emitting light or a light receiving area for receiving light, and the opening of the second package exposes at least the photosensitive area of the diode chip an area, the first side and the second side are opposite;
  • first package located in the opening and covering at least the photosensitive area of the diode chip, wherein the second package abuts at least part of the edge of the first package, and the first package It is a transparent insulating material.
  • the third aspect of the present application provides a method for packaging a diode chip, the method comprising:
  • a substrate comprising a first surface and a second surface opposite the first surface
  • a diode chip comprising a photosensitive area and a non-photosensitive area located outside the photosensitive area, the photosensitive area and the non-photosensitive area are located on a first side of the diode chip, and attaching the second side of the diode chip Installed on the first surface of the substrate, the photosensitive area is a light-emitting area for emitting light or a light-receiving area for receiving light, and the second side is opposite to the first side;
  • first package covering at least the photosensitive area of the diode chip, wherein the first package is a transparent insulating material
  • a second encapsulation body is formed on the first surface of the substrate, the second encapsulation body is in contact with at least part of an edge of the first encapsulation body, and the second encapsulation body includes a non-transparent insulating material.
  • a fourth aspect of the present application provides a distance measuring device, the distance measuring device comprising the aforementioned packaging structure of a diode chip.
  • the fifth aspect of the present application provides a movable platform, which includes: a movable platform body; and the aforementioned distance measuring device, which is arranged on the movable platform body.
  • the second package of non-transparent insulating material and the first package of transparent insulating material are used together to package the diode chip, thereby blocking the continuity of the stress of the package during the packaging process , thereby solving the warpage problem of the packaging structure, reducing packaging cost and packaging difficulty, and being suitable for surface packaging technology.
  • FIG. 1 shows a schematic top view of a conventional diode packaged through a transparent plastic package
  • Figure 2 shows a schematic cross-sectional view of a conventional diode packaged through transparent plastic packaging
  • FIG. 3 shows a schematic cross-sectional view of a packaging structure of a diode chip in an embodiment of the present application
  • FIG. 4 shows a schematic top view of the packaging structure of the diode chip in FIG. 3;
  • FIG. 5 shows a schematic cross-sectional view of a packaging structure of a diode chip in another embodiment of the present application
  • FIG. 6 shows a schematic top view of the packaging structure of the diode chip in FIG. 5;
  • FIG. 7 shows a schematic cross-sectional view of a packaging structure of a laser diode chip in an embodiment of the present application
  • FIG. 8 shows a schematic top view of the packaging structure of the laser diode chip in FIG. 7;
  • FIG. 9 shows a schematic cross-sectional view of a packaging structure of a laser diode chip in another embodiment of the present application.
  • FIG. 10 shows a schematic top view of the packaging structure of the laser diode chip in FIG. 9;
  • Fig. 11 shows a schematic cross-sectional view of a package structure of a diode chip in another embodiment of the present application
  • FIG. 12 shows a schematic top view of the packaging structure of the diode chip in FIG. 11;
  • FIG. 13 shows a schematic cross-sectional view of a package structure of a diode chip in another embodiment of the present application
  • FIG. 14 shows a schematic top view of the packaging structure of the diode chip in FIG. 13;
  • FIG. 15 shows a flowchart of a method for packaging a diode chip in an embodiment of the present application
  • FIG. 16 to FIG. 20 show schematic diagrams of the structure obtained by sequentially executing each step of the packaging method of the diode chip in an embodiment of the present application;
  • Fig. 21 shows a schematic top view of the packaging structure before the temperature sensor and the diode chip are packaged together in an embodiment of the present application
  • Fig. 22 shows a schematic top view of the packaging structure after the temperature sensor and the diode chip are packaged together in an embodiment of the present application
  • FIG. 23 shows a flowchart of a method for packaging a diode chip in another embodiment of the present application.
  • FIG. 24 to FIG. 27 show schematic diagrams of the structure obtained by sequentially executing each step of the packaging method of the diode chip in another embodiment of the present application;
  • Fig. 28 shows a schematic top view of the packaging structure before the temperature sensor and the diode chip are packaged together in another embodiment of the present application;
  • Fig. 29 shows a schematic top view of the packaging structure after the temperature sensor and the diode chip are packaged together in another embodiment of the present application;
  • Fig. 30 shows a schematic diagram of the structure of a ranging device in an embodiment of the present invention.
  • Fig. 31 shows a schematic diagram of a distance measuring device in an embodiment of the present invention.
  • a diode chip packaging structure including: a substrate, including: a substrate including a first surface and a second surface opposite to the first surface; a diode chip,
  • the diode chip includes a photosensitive area and a non-photosensitive area located outside the photosensitive area.
  • the photosensitive area is a light-emitting area for emitting light or a light-receiving area for receiving light.
  • the photosensitive area and the non-photosensitive area are located on the first side of the diode chip.
  • the second side of the chip is arranged on the first surface of the substrate, and the second side is opposite to the first side; the first package body covers at least the photosensitive area of the diode chip, and the first package body is a transparent insulating material; the second package body, Located on the first surface of the substrate, the second package abuts against at least part of the edge of the first package, and the second package includes a non-transparent insulating material.
  • the packaging structure of the present application uses the second package of non-transparent insulating material and the first package of transparent insulating material to package the diode chip, thereby blocking the continuity of the stress of the package during the packaging process, thereby solving the problem of The warpage problem of the packaging structure is solved, and the packaging cost and packaging difficulty are reduced, and it is suitable for surface mounting technology (Surface Mounted Technology, SMT).
  • SMT Surface Mounted Technology
  • the diode chip package structure 300 of the present application includes a substrate 310 , and the substrate 310 includes a first surface and a second surface opposite to the first surface.
  • the substrate 310 can be a conductive frame, such as a metal frame (lead frame), and different parts of the conductive frame can be used for different conductive wiring, and it can also have a bearing portion, Used to carry the diode chip 320 .
  • a conductive frame such as a metal frame (lead frame)
  • different parts of the conductive frame can be used for different conductive wiring, and it can also have a bearing portion, Used to carry the diode chip 320 .
  • the substrate 310 includes a base, and a first conductive wire and one or more second conductive wires are laid on a first surface of the base.
  • the substrate 310 may include various types of substrates such as a PCB substrate (Printed Circuit Board, printed circuit board), a ceramic substrate, and the ceramic substrate may be an aluminum nitride or aluminum oxide substrate.
  • the base of the substrate 310 can be a phenolic paper laminate, an epoxy paper laminate, a polyester glass felt laminate, an epoxy glass cloth laminate, a polyester film , polyimide film, or fluorinated ethylene propylene film, etc.
  • the ceramic substrate may refer to a metal such as copper foil directly bonded to aluminum oxide (Al 2 O 3 ) or aluminum nitride (AlN) ceramic substrate surface (single-sided or double-sided) on the special process board, wherein, the copper foil is used as a conductive wiring to electrically connect with the diode chip 320, etc., then the base of the ceramic substrate can be are ceramic substrates such as alumina or aluminum nitride.
  • the packaging structure 300 of the diode chip also includes a diode chip 320, the diode chip 320 includes a photosensitive area 321 and a non-photosensitive area located outside the photosensitive area 321, and the photosensitive area 321 is used for emitting light.
  • the light output region or the light receiving region for receiving light, the photosensitive region 321 is located on the first side of the diode chip 320, and the second side of the diode chip 320 opposite to the first side is arranged on the first surface of the substrate 310, for example, the diode chip
  • the second side of 320 can be mounted on the first surface of the substrate 310, for example, the diode chip 320 can be mounted on the first surface of the substrate 310 through a conductive adhesive layer, or can also be mounted on the first surface of the substrate 310 through a bonding process.
  • the bonding process includes but not limited to eutectic bonding, direct bonding, etc.
  • the diode chip 320 is a laser diode chip, and the photosensitive region 321 of the laser diode chip is a light exit area for emitting light, and the laser diode chip includes one or more vertical cavity surfaces emit laser diode.
  • the diode chip 320 is an avalanche diode chip, and the photosensitive region 321 of the avalanche diode chip is a photosensitive region for receiving light, and the avalanche diode chip may include one or more avalanche diodes .
  • the above chip types are only examples, and the solution of the present application may also be applicable to other suitable types of diode chips 320 .
  • the substrate 310 includes a first conductive wiring 311 and one or more second conductive wiring 312 , the second conductive wiring 312 is insulated from the first conductive wiring 311 , when the second conductive wiring 312
  • each second conductive wiring 312 is insulated from each other, and the diode chip 320 is attached to the first conductive wiring 311, for example, is attached to the first conductive wiring through a conductive adhesive layer, and the diode chip 320 includes one or more Each pad is connected to a second conductive wiring 312 respectively.
  • each second conductive wiring 312 may include a pin, and the pin is used to connect to the pad of the diode chip 320 .
  • the diode chip 320 includes one or more diodes, and each diode corresponds to a bonding pad, and each bonding pad corresponds to a second conductive wiring 312 , eg, connects to a pin.
  • each pad 322 is electrically connected to its corresponding second conductive wiring through a connection wire 330 (also called a bonding wire).
  • the connecting wire 330 may use at least one of the following connecting wires: aluminum wire, gold wire, silver wire, copper wire, aluminum strip, copper sheet, or aluminum-clad copper wire.
  • the diode chip 320 is mounted on the substrate 310 through a conductive adhesive layer (not shown) to form an electrical path, wherein the material of the conductive adhesive layer includes conductive silver paste, solder or conductive chip connection film (die attach film, DAF), wherein the conductive silver paste can be common silver paste or nano silver paste, the solder includes but not limited to AuSn20, optionally, in order to ensure the mounting position accuracy and high heat dissipation, AuSn20 eutectic was used for loading.
  • the material of the conductive adhesive layer includes conductive silver paste, solder or conductive chip connection film (die attach film, DAF)
  • the conductive silver paste can be common silver paste or nano silver paste
  • the solder includes but not limited to AuSn20, optionally, in order to ensure the mounting position accuracy and high heat dissipation, AuSn20 eutectic was used for loading.
  • solder such as AuSn20 is used as the conductive adhesive layer, it is basically non-volatile or low-volatile compared to other solders containing volatile fluxes (such as solder paste solder), so there will not be a problem due to volatile substances in the solder. And the problem of polluting the diode chip 320 .
  • the conductive frame when the substrate 310 is a conductive frame, the conductive frame includes a first frame portion used as a first conductive wiring and one or more second conductive wiring used as a second frame part.
  • the conductive frame can be used not only to support the diode chip 320, but also to lead the diode chip 320 out for connection with an external circuit.
  • the first frame part may include a bearing part, the bearing part is used to carry the diode chip 320, and the pin connected with the bearing part, so as to lead out the circuit of the diode chip 320, wherein the pin and the bearing part may be integrally formed, and the lead
  • the shape of the foot can be reasonably set according to actual needs, and is not specifically limited here.
  • the second frame part of the conductive frame is used as a second conductive wiring for connecting to the pad of the diode chip 320 , wherein the second frame part may only include pins.
  • each diode included in the diode chip 320 may include a first electrode on the first side and a second electrode on the second side, wherein, for example, when the diode chip 320 is an avalanche diode chip, the first electrode may correspond to the The anode and the second electrode may correspond to the cathode of the diode.
  • the diode chip 320 is a laser diode chip, the first electrode may correspond to the anode of the diode, and the second electrode may correspond to the cathode of the diode.
  • the first electrode and the second electrode may also be exchanged, for example, the first electrode is a cathode, and the second electrode is an anode.
  • the first electrode on the first side may be connected to the same first conductive wiring by bonding.
  • the package structure 300 of the diode chip of the present application further includes a second package body 360 located on the first surface of the substrate 310, for example, the second package body 360 covers and covers the At least part of the first surface of the substrate 310 , or, covers and covers at least part of the first surface of the substrate 310 outside the photosensitive area 321 and at least part of the non-photosensitive area of the diode chip 320 .
  • the second package body 360 includes a non-transparent insulating material, which can be any suitable material known to those skilled in the art, for example, the non-transparent insulating material includes but not limited to a non-transparent resin material, and the non-transparent resin material includes Non-transparent thermosetting resin, which can soften or flow during the molding process, has plasticity, can be made into a certain shape, and at the same time undergoes a chemical reaction to cross-link and solidify.
  • Non-transparent resin materials can include phenolic resin, urea-formaldehyde resin, and melamine-formaldehyde At least one of thermosetting resins such as resin, epoxy resin, unsaturated resin, polyurethane, polyimide, etc.
  • epoxy resin is used as the second package body 360, wherein the epoxy resin can be filled with Substances or epoxy resins without filler substances also include various additives (for example, curing agents, modifiers, release agents, thermochromic agents, flame retardants, etc.), such as phenolic resins as curing agents, solid Particles (such as silicon micropowder) and the like are used as fillers.
  • the transparent resin material may also include silica gel.
  • the non-transparent resin material may be formed by adding non-transparent substances into the transparent resin material, such as black dye, reflective solid particles, etc. may be added.
  • the package structure 300 of the diode chip of the present application further includes a first package body 350 , the first package body 350 covers at least the photosensitive area 321 of the diode chip 320 , wherein the first package body 350 is a transparent insulating material.
  • the first package 350 covers the entire diode chip 320 and a part of the first surface of the substrate 310 outside the entire diode chip 320
  • the second package 360 covers the first surface of the substrate 310 outside the first package 350 .
  • the second package body 360 covers and wraps at least part of the first surface of the substrate 310 outside the photosensitive area 321 and at least part of the non-photosensitive area of the diode chip 320, then the first package body 350 covers the photosensitive area of the diode chip 320 321 and the non-photosensitive area of the diode chip 320 are not covered by the second package body 360 .
  • the first package body 350 is a transparent insulating material, wherein the transparent insulating material may include at least one of the following materials: glass, transparent resin material, wherein the transparent resin material includes a transparent thermosetting resin, which can be softened during the molding process Or flow, has plasticity, can be made into a certain shape, and at the same time chemical reaction occurs to cross-link and solidify.
  • the transparent insulating material may include at least one of the following materials: glass, transparent resin material, wherein the transparent resin material includes a transparent thermosetting resin, which can be softened during the molding process Or flow, has plasticity, can be made into a certain shape, and at the same time chemical reaction occurs to cross-link and solidify.
  • Transparent resin materials can include phenolic resin, urea-formaldehyde resin, melamine-formaldehyde resin, epoxy resin, unsaturated resin, polyurethane, polyester At least one of thermosetting resins such as imide, in a specific example, use epoxy resin as the first package body 350, wherein the epoxy resin can be epoxy resin with filler or no filler, and also includes Various additives (for example, curing agent, modifier, release agent, thermal colorant, flame retardant, etc.), such as phenolic resin as curing agent, solid particles (such as silicon micropowder) as filler.
  • the transparent resin material may also include silica gel.
  • the first package body 350 may be injection molded after the injection molding of the second package body 360.
  • a gap is formed in the second package body 360, and the first package body 350 fills the gap.
  • the second package 360 can also support the first package 350 , for example, part of the first package 350 can be located on a part of the second package 360 , so that the second package can support the first package.
  • the second package body 360 is in contact with at least part of the edge of the first package body 360.
  • the side wall of the first package body 350 facing the second package body 360 and the side wall of the second package body 360 facing the first package body 350 are attached to each other, so that the second package body 360 and the first package body 350 can be closely combined to package the diode chip 320 and the substrate 310 carrying the diode chip 320 .
  • the package body 350 can be bonded to the photosensitive region 321 through a transparent adhesive 340 , and the photosensitive region 321 of the diode chip 320 can receive light or emit light by using the adhesive 340 .
  • part of the second package body 360 is also filled in the gap between the second frame part and the first frame part, and part of the second package body 360 is also filled. Fill in the gap between adjacent second frame parts, so that the parts of the conductive frame can be physically connected, and can support the diode chip 320 more stably, and because the second package body 360 is an insulating material , therefore, it can also play the role of isolating and insulating different frame parts.
  • the first package body 350 may also be filled in the gap between the second frame part and the first frame part and/or in the gap between adjacent second frame parts.
  • the package structure further includes a temperature sensor 370, and the temperature sensor 370 is disposed on the first surface of the substrate 310 and outside the diode chip 320, wherein,
  • the second package body 360 wraps the temperature sensor 370, and by packaging the temperature sensor 370 and the diode chip 320 together, and wrapping the temperature sensor 370 in a non-transparent insulating material, the temperature sensor 370 can be prevented from being affected by light interference.
  • the problem of its output so as to ensure the accuracy of its temperature calibration for the diode chip 320 such as the APD chip, and then ensure that the diode chip 320 can work under a stable gain.
  • the number of temperature sensors 370 may be one or more.
  • each pad 371 is provided on the temperature sensor 370, and each pad 371 can be correspondingly connected to the corresponding third conductive wiring on the substrate 310, for example, when the substrate 310 is a conductive frame At this time, the pad 371 can be connected to the third frame part used as the third conductive wiring through the connecting wire 372, and the third frame part and the second frame part and the first frame part are isolated and insulated from each other.
  • the temperature sensor 370 Different pads correspond to different third frame parts, and different third frame parts are insulated from each other. Through such an arrangement, the temperature sensor 370 can be connected to the third conductive wiring of the substrate 310 , and can be electrically connected to an external circuit through the third conductive wiring, for example, to a controller and the like.
  • the first package body 350 wraps the temperature sensor 370, or, in other examples, the second package body 360 and the first package body 350 cover the temperature sensor 370 together, so as to protect the temperature sensor 370. Protective effects.
  • the packaging method applied to the APD chip can also be applied to the laser diode chip such as the surface of the vertical cavity Emitting laser diode chip.
  • a diode chip packaging method 1500 includes the following steps S1501 to S1504:
  • a substrate 310 is provided, and the substrate 310 includes a first surface and a second surface opposite to the first surface, as shown in FIG. 16 .
  • the substrate 310 shown in FIG. 16 is a conductive frame. If there is no conflict, the packaging method using the conductive frame as the substrate 310 is also applicable to, for example, a PCB substrate or a ceramic substrate.
  • the conductive frame shown in FIG. 16 can be used not only to support the diode chip 320, but also to lead out the diode chip 320 and connect it to an external circuit.
  • the substrate 310 may include a first frame portion, and the first frame portion used as the first conductive wiring 311 may include a bearing portion 3111, the bearing portion 3111 is used to carry the diode chip 320, and be connected to the bearing portion 3111
  • the pins 3112 of the diode chip 320 are used to lead out the circuit of the diode chip 320, wherein the pins and the carrying part can be integrally formed, and the shape of the pins can be reasonably set according to actual needs, which is not specifically limited here.
  • the conductive frame also includes a second frame part, which is used as the second conductive wiring 312, and the first frame part and the second frame part are used to connect with the pads of the diode chip 320, wherein the second frame part may only include pins .
  • a diode chip 320 including a photosensitive region 321 and a non-photosensitive region located outside the photosensitive region 321 is provided, and the second side of the diode chip 320 is attached to the first surface of the substrate 310, and the second side is connected to the first surface of the substrate 310.
  • the first side is opposite.
  • the photosensitive area 321 and the non-photosensitive area are located on the first side of the diode chip 320 .
  • the photosensitive area 321 is a light emitting area for emitting light or a light receiving area for receiving light, as shown in FIG. 17 .
  • Diode chip 320 as shown in Figure 17 is an APD chip, and this APD chip can comprise one or more APDs, then photosensitive area 321 comprises the light-receiving area of each APD, and when diode chip 320 is a laser diode chip, laser diode
  • the chip may include one or more laser diodes, and the photosensitive area 321 includes the light emitting area of each laser diode.
  • the photosensitive area 321 is located on the first side of the diode chip 320, and the second side of the diode chip 320 opposite to the first side is arranged on the first surface of the substrate 310.
  • the second side of the diode chip 320 can be mounted on the second side of the substrate 310.
  • One surface, for example, the diode chip 320 is mounted on the first surface of the substrate 310 through a conductive adhesive layer, or it can also be mounted on the first surface of the substrate 310 through a bonding process, the bonding process includes but not limited to eutectic bonding , direct bonding, etc.
  • the substrate 310 includes a first conductive wiring and one or more second conductive wirings, the second conductive wiring is insulated from the first conductive wiring, and when there are multiple second conductive wirings, each second conductive wiring is insulated from each other , the diode chip 320 is mounted on the first conductive wiring. For example, as shown in FIG. For example, it may be mounted on the first surface of the bearing part.
  • the diode chip 320 after mounting the diode chip 320 on the substrate 310 , it further includes: as shown in FIG. 18 , a step of electrically connecting each pad 322 to its corresponding second conductive wiring through a connection wire 330 .
  • the diode chip 320 includes one or more bonding pads 322, and each bonding pad 322 is respectively connected to a second conductive wiring.
  • the diode chip 320 includes one or more diodes, and each diode corresponds to a bonding pad 322 .
  • the connecting wire 330 may use at least one of the following connecting wires: aluminum wire, gold wire, silver wire, copper wire, aluminum strip, copper sheet, or aluminum-clad copper wire.
  • connection wire 330 can be connected to the pad 322 and the second conductive wiring through a bonding process, for example, the connection wire 330 is tightly bonded to the carrier board pad 322 by using energy generated by heat, pressure, ultrasonic waves, lasers, etc., thereby realizing a bonding pad 322 is electrically interconnected with the substrate 310 .
  • step S1503 a first package body 350 covering at least the photosensitive region 321 of the diode chip 320 is formed, wherein the first package body 350 is made of a transparent insulating material.
  • the first package body 350 (such as glass or transparent resin material) is bonded to the photosensitive region 321 of the diode chip 320 through a transparent adhesive 340 .
  • the first package body 350 can be transparent glass or other transparent resin materials, etc.
  • the shape and size of the first package body 350 can be pre-prepared, and it can be substantially consistent with the photosensitive area 321 or can be larger than the size of the photosensitive region 321 .
  • the first package body 350 may only cover the photosensitive region 321 of the diode chip 320 , or when there are multiple photosensitive regions 321 of the diode, it may also cover the space between adjacent photosensitive regions 321 .
  • the bonding pad 322 of the diode chip 320 is located at the edge area of the chip, while the photosensitive region 321 is located inside the bonding pad 322, and the first package body 350 can also cover the photosensitive region 321 and between the bonding pad 322 and the photosensitive region 321. Part of the non-photosensitive area between, etc.
  • Forming the first package body 350 by bonding can not only protect the chip, but also ensure that the sensory area is not blocked so that it can work normally.
  • a second package body 360 is formed on the first surface of the substrate 310 , and the second package body 360 is in contact with at least part of the edge of the first package body 350 .
  • a second package body 360 is formed outside the first package body 350 and outside the photosensitive region 321, and the second package body 360 covers and wraps at least part of the first surface of the substrate 310 and the diode chip 320 located outside the photosensitive region 321. At least part of the non-photosensitive area, the second package body 360 includes a non-transparent insulating material.
  • the material of the second package body 360 can be a non-transparent resin material, and the non-transparent resin material is usually formed by adding black dye, solid particles, etc. to the transparent resin. Therefore, it is more transparent than the transparent resin. Stress transfer after curing will be blocked by the added substance, thereby avoiding the difficult problem of warping caused by injection molding of transparent molding compound.
  • the material of the second package body 360 can be a thermosetting material, and the second package body 360 can be formed on the outside of the first package body 350 and the outside of the photosensitive region 321 through an injection molding process, and the injection molding can be a thermocompression injection molding process, or other suitable injection molding process.
  • the injection molding process uses a liquid non-transparent resin material, so that the liquid non-transparent resin material can cover and wrap at least part of the first surface of the substrate 310 outside the photosensitive region 321 of the substrate 310 before curing. And at least part of the non-photosensitive area of the diode chip 320 .
  • the step of forming the second package 360 outside the first package 350 and outside the photosensitive region 321 includes: providing a mold, and placing the substrate 310 carrying the diode chip 320 in the mold, wherein the mold can be Any suitable mold is not specifically limited here. Subsequently, a molten non-transparent resin material is injected into the mold, and the liquid resin material is evenly coated on the substrate 310 and part of the diode chip 320, covering and wrapping the diode chip 320.
  • At least part of the first surface of the substrate 310 outside the photosensitive area 321 of the chip 320 and at least part of the non-photosensitive area of the diode chip 320 are then cured to solidify the non-transparent resin material to form the second package 360,
  • the curing may be a thermal curing process, specifically, a suitable curing method is reasonably selected according to the material of the second package body 360 actually used, and finally demoulding is performed.
  • the top surface of the formed second package body 360 is higher than the top surface of the diode chip 320 and higher than the top surface of the connecting wire 330, which is substantially flush with the top surface of the first package body 350.
  • the first package body The side wall of 350 facing the second package body 350 is attached to the side wall of the second package body 360 facing the first package body 350, thereby sealing the diode chip 320, providing physical and electrical protection for the chip, and preventing external interference.
  • the method of the present application further includes: as shown in FIG. 21 , before forming the second package 360 , providing a temperature sensor 370 and mounting the temperature sensor 370 on the first surface of the substrate 310 , wherein the temperature The sensor 370 is located outside the diode chip 320; when the second package 360 is formed, the second package 360 also covers the temperature sensor 370, as shown in FIG. 22 . Wrapping the temperature sensor 370 in a non-transparent insulating material can avoid the problem that the temperature sensor 370 is affected by light interference and affect its output, thereby ensuring the accuracy of its temperature calibration for the diode chip 320 such as the APD chip, thereby ensuring that the diode chip 320 can Work at steady gain.
  • the temperature sensor 370 is provided with at least one solder pad 371, for example, including two solder pads. After the temperature sensor 370 is mounted on the substrate 310, each solder pad 371 can be connected to the substrate 310 through a connecting wire 372 correspondingly. Corresponding third conductive wiring on the substrate, for example, when the substrate 310 is a conductive frame, the pad 371 can be connected to the third frame part used as the third conductive wiring through the connecting wire 372, the third frame part and the second frame part And the first frame parts are isolated and insulated from each other. Optionally, different pads of the temperature sensor 370 correspond to different third frame parts, and different third frame parts are insulated from each other. Through such an arrangement, the temperature sensor 370 can be connected to the third conductive wiring of the substrate 310 , and can be electrically connected to an external circuit through the third conductive wiring, for example, to a controller and the like.
  • part of the second package 360 is also filled in the gap between the second frame part and the first frame part, and part of the second package 360 is also filled in the adjacent second frame in the gaps between parts.
  • the method of the present application further includes a cutting step, by which the chips are separated, for example, a plurality of diode chips 320 can be packaged at the same time, and each diode chip 320 is separated by cutting.
  • the encapsulation structure can also be prepared by the following encapsulation method, and the details described above can also be applied to this embodiment on the premise of no conflict.
  • the encapsulation method 2300 in this embodiment includes the following steps S2301 to S2304:
  • a substrate 310 is provided, and the substrate 310 includes a first surface and a second surface opposite to the first surface.
  • the substrate 310 shown in FIG. 24 is a conductive frame, and the substrate 310 may also be, for example, a PCB substrate or a ceramic substrate. If there is no conflict, the packaging method using the conductive frame as the substrate 310 is also applicable to, for example, a PCB substrate or a ceramic substrate. Specifically, details of the conductive frame can be referred to above, and will not be repeated here.
  • a second package body 360 is formed on the periphery of the first surface of the substrate 310 for setting the diode chip area, the second package body 360 has an opening, and the second package body 360 includes a non-transparent insulating material, as shown in FIG. 25.
  • the material of the second package body 360 can be a non-transparent resin material, and the second package body 360 can be formed on the periphery of the substrate 310 for setting the diode chip 320 area through an injection molding process, and the second package body 360 can be formed as The side wall is arranged around the periphery of the diode chip 320 area, that is, the second package body 360 has an opening, and the opening at least exposes the area where the diode chip 320 is located, or, the opening at least exposes the diode chip and the substrate 310 for use with the diode.
  • At least part of the second conductive lead is connected to the bonding pad of the chip, so that the bonding pad can be connected to the second conductive lead through a connecting wire after the diode chip is mounted.
  • the opening can also expose the area on the substrate 310 where the temperature sensor 370 is intended to be arranged, and at least part of the pads of the temperature sensor 370 that need to be connected. third conductive wiring.
  • the step of forming the second package on the periphery of the substrate 310 where the diode chip 320 is disposed includes: providing a mold, and placing the substrate in the mold, wherein the mold can be any suitable mold, which is not described here.
  • the mold can be any suitable mold, which is not described here.
  • injecting a molten non-transparent resin material into the mold the liquid resin material is coated on the substrate for setting the periphery of the diode chip area, and then, performing a curing treatment to solidify the non-transparent resin material.
  • the curing can be a thermal curing process, specifically, a suitable curing method is reasonably selected according to the material of the second package actually used, and finally demoulding is performed.
  • it also includes forming at least one gap (not shown) in the second package body 360, by providing the gap can facilitate the subsequent injection molding process of forming the first package body 350 for forming the first package body 350 transparent resin material can flow smoothly.
  • the method of the present application further includes: as shown in FIG. 28 , before forming the second package 360 , providing a temperature sensor 370 and mounting the temperature sensor 370 on the first surface of the substrate 310 , wherein the temperature The sensor 370 is located outside the area where the diode chip 320 is intended to be disposed; when the second package 360 is formed, the second package 360 also covers the temperature sensor 370 , as shown in FIG. 29 .
  • Wrapping the temperature sensor 370 in a non-transparent insulating material can avoid the problem that the temperature sensor 370 is affected by light interference and affect its output, thereby ensuring the accuracy of its temperature calibration for the diode chip 320 such as the APD chip, thereby ensuring that the diode chip 320 can Work at steady gain.
  • part of the second package 360 is also filled in the gap between the second frame part and the first frame part, and part of the second package 360 is also filled in the gap between adjacent second frame parts. .
  • a diode chip 320 including a photosensitive region 321 and a non-photosensitive region located outside the photosensitive region 321 is provided, and the second side of the diode chip 320 is mounted on the first surface of the substrate 310, and the second side is connected to the first surface of the substrate 310.
  • the first side is opposite, the photosensitive area 321 and the non-photosensitive area are located on the first side of the diode chip 320, the photosensitive area 321 is a light-emitting area for emitting light or a light-receiving area for receiving light, and the opening of the second package body 360 is at least The photosensitive region 321 of the diode chip 320 is exposed, as shown in FIG. 26 .
  • Diode chip 320 as shown in Figure 26 is an APD chip, and this APD chip can comprise one or more APDs, then photosensitive area 321 comprises the light receiving area of each APD, and when diode chip 320 is a laser diode chip, laser diode
  • the chip may include one or more laser diodes, and the photosensitive area 321 includes the light emitting area of each laser diode.
  • the photosensitive area 321 is located on the first side of the diode chip 320, and the second side of the diode chip 320 opposite to the first side is arranged on the first surface of the substrate 310.
  • the second side of the diode chip 320 can be mounted on the second side of the substrate 310.
  • One surface, for example, the diode chip 320 is mounted on the first surface of the substrate 310 through a conductive adhesive layer, or it can also be mounted on the first surface of the substrate 310 through a bonding process, the bonding process includes but not limited to eutectic bonding , direct bonding, etc.
  • the substrate 310 includes a first conductive wiring and one or more second conductive wirings, the second conductive wiring is insulated from the first conductive wiring, and when there are multiple second conductive wirings, each second conductive wiring is insulated from each other , the diode chip 320 is mounted on the first conductive wiring, for example, as shown in FIG. Mounted on the first surface of the bearing part.
  • the diode chip 320 after mounting the diode chip 320 on the substrate 310 , it further includes: a step of electrically connecting each pad 322 with its corresponding second conductive wiring through the connecting wire 330 .
  • the diode chip 320 includes one or more bonding pads 322, and each bonding pad 322 is respectively connected to a second conductive wiring.
  • the diode chip 320 includes one or more diodes, and each diode corresponds to a bonding pad 322 .
  • the connecting wire 330 may use at least one of the following connecting wires 330: aluminum wire, gold wire, silver wire, copper wire, aluminum strip, copper sheet, or aluminum-clad copper wire.
  • connection wire 330 can be connected to the pad 322 and the second conductive wiring through a bonding process, for example, the connection wire 330 is tightly bonded to the carrier board pad 322 by using energy generated by heat, pressure, ultrasonic waves, lasers, etc., thereby realizing a bonding pad 322 is electrically interconnected with the substrate 310 .
  • step S2304 the first package body 350 located in the opening and covering at least the photosensitive region 321 of the diode chip 320 is formed, wherein the second package body 360 abuts at least part of the edge of the first package body 350, and the first package body Body 350 is a transparent insulating material.
  • the first package body 350 may be formed by any suitable method.
  • the first package body 350 located in the opening of the second package body 360 and covering at least the photosensitive region 321 of the diode chip 320 is formed by injection molding, wherein part of the first package body The body 350 also fills the gap, and the chip is covered by the first package body 350 , and because the first package body 350 is a transparent insulating material, it can ensure that light reaches the photosensitive area of the diode chip 320 smoothly.
  • the solution of the present application first forms the second package 360 by injection molding, and then forms the first package 350 by injection molding, thereby blocking the first package 350 (such as transparent plastic encapsulant) ) stress transmission, thereby effectively improving the warpage problem after injection molding of the transparent plastic encapsulant, and avoiding problems such as delamination between the chip and the substrate 310 caused by warpage, broken wire bonds, and inability to cut the film.
  • first package 350 such as transparent plastic encapsulant
  • a mold may be provided, and the substrate 310 and the second package body 360 carried on the substrate 310, the diode chip 320, etc. are placed in the mold, and then the liquid transparent resin material is filled into the opening, and part of the resin material is also Flow out from the opening of the second package body 360, and then perform curing treatment to solidify the transparent resin material to form the first package body 350.
  • the curing can be a thermal curing process, specifically according to the first package body 350 actually used. Reasonably choose the appropriate curing method for the material, and finally demould.
  • the first package body 350 is a transparent insulating material, wherein the transparent insulating material may include at least one of the following materials: a transparent resin material, wherein the transparent resin material includes a transparent thermosetting resin that can soften or flow during the molding process , has plasticity, can be made into a certain shape, and at the same time undergoes a chemical reaction to cross-link and solidify.
  • Transparent resin materials can include phenolic resin, urea-formaldehyde resin, melamine-formaldehyde resin, epoxy resin, unsaturated resin, polyurethane, polyimide At least one of thermosetting resins such as amines.
  • the transparent resin material may also include silica gel.
  • the side wall of the first package body 350 facing the second package body 360 is attached to the side wall of the second package body 360 facing the first package body 350, thereby sealing the diode chip 320 and providing physical and electrical protection for the chip , to prevent external interference.
  • the method of the present application further includes a cutting step, by which the chips are separated, for example, a plurality of diode chips 320 can be packaged at the same time, and each diode chip 320 is separated by cutting.
  • the completed encapsulation method may also include other steps, which will not be described one by one here.
  • the packaging structure of the present application uses the second package body 360 of non-transparent insulating material and the first package body 350 of transparent insulating material to package the diode chip , thereby blocking the continuity of the package body stress during the packaging process, thereby solving the warping problem of the packaging structure, and reducing the packaging cost and difficulty of packaging, and suitable for surface mount technology (Surface Mounted Technology, SMT).
  • SMT Surface Mounted Technology
  • the distance measuring devices can be electronic equipment such as laser radar and laser distance measuring equipment.
  • the ranging device is used to sense external environment information, for example, distance information, orientation information, reflection intensity information, speed information, etc. of environmental objects.
  • the distance measuring device can detect the distance from the detection object to the distance measurement device by measuring the time of light propagation between the distance measurement device and the detection object, that is, the time of flight (Time-of-Flight, TOF).
  • the distance measuring device can also detect the distance from the detection object to the distance measuring device by other technologies, such as a distance measuring method based on phase shift (phase shift) measurement, or a distance measuring method based on frequency shift (frequency shift) measurement, in This is not limited.
  • the distance measuring device 100 includes a transmitting circuit, a scanning module and a detecting module, the transmitting module is used to transmit an optical pulse sequence to detect the target scene; the scanning module is used to sequentially change the propagation path of the optical pulse sequence emitted by the transmitting module to emit in different directions to form a scanning field of view; the detection module is used to receive the light pulse sequence reflected back by the object, and determine the distance of the object relative to the distance measuring device and/or according to the reflected light pulse sequence Orientation to generate point cloud points.
  • the transmitting module is used to transmit an optical pulse sequence to detect the target scene
  • the scanning module is used to sequentially change the propagation path of the optical pulse sequence emitted by the transmitting module to emit in different directions to form a scanning field of view
  • the detection module is used to receive the light pulse sequence reflected back by the object, and determine the distance of the object relative to the distance measuring device and/or according to the reflected light pulse sequence Orientation to generate point cloud points.
  • the transmitting module includes a transmitting circuit 110 ; the detecting module includes a receiving circuit 120 , a sampling circuit 130 and an arithmetic circuit 140 .
  • the transmitting circuit 110 can emit a sequence of light pulses (eg, a sequence of laser pulses).
  • the receiving circuit 120 can receive the optical pulse sequence reflected by the object to be detected, that is, obtain the pulse waveform of the echo signal through it, and perform photoelectric conversion on the optical pulse sequence to obtain an electrical signal, and then process the electrical signal. output to the sampling circuit 130.
  • the sampling circuit 130 can sample the electrical signal to obtain a sampling result.
  • the arithmetic circuit 140 can determine the distance between the ranging device 100 and the detected object, that is, the depth, based on the sampling result of the sampling circuit 130 .
  • the distance measuring device 100 may further include a control circuit 150, which can control other circuits, for example, control the working time of each circuit and/or set parameters for each circuit.
  • a control circuit 150 can control other circuits, for example, control the working time of each circuit and/or set parameters for each circuit.
  • the ranging device shown in FIG. 30 includes a transmitting circuit, a receiving circuit, a sampling circuit and an arithmetic circuit for emitting a light beam for detection, the embodiment of the present application is not limited thereto.
  • the transmitting circuit The number of any one of the receiving circuit, the sampling circuit, and the computing circuit can also be at least two, for emitting at least two light beams along the same direction or respectively along different directions; wherein, the at least two light paths can be simultaneously It can also be emitted at different times.
  • the light emitting chips in the at least two emitting circuits are packaged in the same module.
  • each emitting circuit includes a laser emitting chip, and the dies of the laser emitting chips in the at least two emitting circuits are packaged together and accommodated in the same packaging space.
  • the distance measuring device 100 can also include a scanning module, which is used to change the propagation direction of at least one optical pulse sequence (such as a laser pulse sequence) emitted by the transmitting circuit, so as to scan the field of view. to scan.
  • a scanning module which is used to change the propagation direction of at least one optical pulse sequence (such as a laser pulse sequence) emitted by the transmitting circuit, so as to scan the field of view. to scan.
  • the scanning area of the scanning module within the field of view of the ranging device increases with the accumulation of time.
  • the module including the transmitting circuit 110, the receiving circuit 120, the sampling circuit 130 and the operation circuit 140, or the module including the transmitting circuit 110, the receiving circuit 120, the sampling circuit 130, the operation circuit 140 and the control circuit 150 may be called a measuring circuit.
  • the ranging module can be independent of other modules, for example, the scanning module.
  • a coaxial optical path may be used in the distance measuring device, that is, the light beam emitted by the distance measuring device and the reflected light beam share at least part of the light path in the distance measuring device.
  • the distance measuring device may also adopt an off-axis optical path, that is, the light beam emitted by the distance measuring device and the reflected light beam are respectively transmitted along different optical paths in the distance measuring device.
  • Fig. 31 shows a schematic diagram of an embodiment in which the distance measuring device of the present invention adopts a coaxial optical path.
  • the ranging device 200 includes a ranging module 210, and the ranging module 210 includes a transmitter 203 (which may include the above-mentioned transmitting circuit), a collimator element 204, a detector 205 (which may include the above-mentioned receiving circuit, sampling circuit and computing circuit) and The light path changing element 206 .
  • the distance measuring module 210 is used for emitting light beams, receiving return light, and converting the return light into electrical signals.
  • the transmitter 203 can be used to transmit the light pulse sequence.
  • the transmitter 203 may emit a sequence of laser pulses.
  • the laser beam emitted by the transmitter 203 is a narrow-bandwidth beam whose wavelength is outside the range of visible light.
  • the collimating element 204 is arranged on the outgoing light path of the emitter, and is used for collimating the light beam emitted from the emitter 203, and collimating the light beam emitted by the emitter 203 into a parallel light that is emitted to the scanning module.
  • the collimating element is also used to converge at least a portion of the return light reflected by the detection object.
  • the collimating element 204 may be a collimating lens or other elements capable of collimating light beams.
  • the optical path changing element 206 is used to combine the transmitting optical path and receiving optical path in the distance measuring device before the collimating element 204, so that the emitting optical path and receiving optical path can share the same collimating element, so that the optical path more compact.
  • the emitter 203 and the detector 205 respectively use their own collimating elements, and the optical path changing element 206 is arranged on the optical path after the collimating element.
  • the optical path changing element can use a small-area reflector to The emitting light path and the receiving light path are merged.
  • the optical path changing element may also use a reflector with a through hole, wherein the through hole is used to transmit the outgoing light of the emitter 203 , and the reflector is used to reflect the return light to the detector 205 . In this way, the shielding of the return light by the support of the small reflector in the case of using the small reflector can be reduced.
  • the optical path changing element deviates from the optical axis of the collimating element 204 .
  • the optical path changing element may also be located on the optical axis of the collimating element 204 .
  • the ranging device 200 also includes a scanning module 202 .
  • the scanning module 202 is placed on the outgoing optical path of the distance measuring module 210.
  • the scanning module 202 is used to change the transmission direction of the collimated light beam 219 emitted by the collimating element 204 and project it to the external environment, and project the return light to the collimating element 204 .
  • the returned light is converged onto the detector 205 through the collimation element 204 .
  • the detector 205 may include the aforementioned packaging structure of diode chips, for example, the packaging structure of avalanche diode chips, so as to convert the received return light into electrical signals.
  • the scanning module 202 may include at least one optical element for changing the propagation path of the beam, wherein the optical element may change the propagation path of the beam by reflecting, refracting, diffracting, etc.
  • the optical element includes at least one light refraction element with a non-parallel exit surface and an incident surface.
  • the scanning module 202 includes a lens, a mirror, a prism, a vibrating mirror, a grating, a liquid crystal, an optical phased array (Optical Phased Array), or any combination of the above optical elements.
  • At least part of the optical elements are movable, for example, driven by a driving module to move the at least part of the optical elements, and the moving optical elements can reflect, refract or diffract light beams to different directions at different times.
  • multiple optical elements of scanning module 202 may rotate or vibrate about a common axis 209, with each rotating or vibrating optical element serving to continuously change the direction of propagation of the incident light beam.
  • the multiple optical elements of scanning module 202 may rotate at different rotational speeds, or vibrate at different speeds.
  • at least some of the optical elements of scanning module 202 may rotate at substantially the same rotational speed.
  • the multiple optical elements of the scanning module may also rotate about different axes.
  • the multiple optical elements of the scanning module may also rotate in the same direction or in different directions; or vibrate in the same direction or in different directions, which is not limited here.
  • the scanning module 202 includes a first optical element 214 and a driver 216 connected to the first optical element 214, the driver 216 is used to drive the first optical element 214 to rotate around the rotation axis 209, so that the first optical element 214 changes The direction of the collimated light beam 219 .
  • the first optical element 214 projects the collimated light beam 219 in different directions.
  • the angle between the direction of the collimated light beam 219 changed by the first optical element and the rotation axis 209 changes as the first optical element 214 rotates.
  • first optical element 214 includes a pair of opposing non-parallel surfaces through which collimated light beam 219 passes.
  • the first optical element 214 comprises a prism having a thickness varying along at least one radial direction.
  • the first optical element 214 includes a wedge prism that refracts the collimated light beam 219 .
  • the scanning module 202 further includes a second optical element 215 , the second optical element 215 rotates around the rotation axis 209 , and the rotation speed of the second optical element 215 is different from that of the first optical element 214 .
  • the second optical element 215 is used to change the direction of the light beam projected by the first optical element 214 .
  • the second optical element 215 is connected with another driver 217, and the driver 217 drives the second optical element 215 to rotate.
  • the first optical element 214 and the second optical element 215 can be driven by the same or different drivers, so that the rotation speed and/or the direction of rotation of the first optical element 214 and the second optical element 215 are different, thereby projecting a collimated light beam 219 to the external space In different directions, a larger spatial range can be scanned.
  • the controller 218 controls the drivers 216 and 217 to drive the first optical element 214 and the second optical element 215 respectively.
  • the rotational speeds of the first optical element 214 and the second optical element 215 can be determined according to the area and pattern expected to be scanned in practical applications.
  • Drivers 216 and 217 may include motors or other drivers.
  • the second optical element 215 includes a pair of opposing non-parallel surfaces through which the light beam passes. In one embodiment, the second optical element 215 comprises a prism whose thickness varies along at least one radial direction. In one embodiment, the second optical element 215 includes a wedge prism.
  • the scanning module 202 further includes a third optical element (not shown in the figure) and a driver for driving the movement of the third optical element.
  • the third optical element comprises a pair of opposite non-parallel surfaces through which the light beam passes.
  • the third optical element comprises a prism whose thickness varies along at least one radial direction.
  • the third optical element comprises a wedge prism. At least two of the first, second and third optical elements rotate at different rotational speeds and/or deflections.
  • the scanning module includes 2 or 3 photorefractive elements sequentially arranged on the outgoing optical path of the optical pulse sequence.
  • at least two of the photorefractive elements in the scanning module rotate during the scanning process, so as to change the direction of the light pulse sequence.
  • the scanning path of the scanning module is different at least partly at different times.
  • the rotation of each optical element in the scanning module 202 can project light to different directions, such as the direction of the projected light 211 and the direction 213. space to scan.
  • the light 211 projected by the scanning module 202 hits the detection object 201 , a part of the light is reflected by the detection object 201 to the distance measuring device 200 in a direction opposite to the projected light 211 .
  • the return light 212 reflected by the detection object 201 enters the collimation element 204 after passing through the scanning module 202 .
  • the detector 205 is placed on the same side of the collimation element 204 as the emitter 203, and the detector 205 is used to convert at least part of the return light passing through the collimation element 204 into an electrical signal.
  • each optical element is coated with an anti-reflection film.
  • the thickness of the antireflection film is equal to or close to the wavelength of the light beam emitted by the emitter 203, which can increase the intensity of the transmitted light beam.
  • a filter layer is coated on the surface of a component located on the beam propagation path in the ranging device, or an optical filter is arranged on the beam propagation path, for at least transmitting the wavelength band of the beam emitted by the transmitter, Reflect other bands to reduce noise from ambient light to the receiver.
  • the transmitter 203 may include a laser diode, which emits nanosecond-level laser pulses through the laser diode.
  • the laser diode may have the aforementioned packaging structure.
  • the receiving time of the laser pulse can be determined, for example, by detecting The rising edge time and/or the falling edge time of the electrical signal pulse determine the laser pulse receiving time.
  • the distance measuring device 200 can calculate the TOF by using the pulse receiving time information and the pulse sending time information, so as to determine the distance from the detection object 201 to the distance measuring device 200 .
  • the distance and orientation detected by the ranging device 200 can be used for remote sensing, obstacle avoidance, surveying and mapping, modeling, navigation and so on.
  • the present application also provides a movable platform, which includes: a movable platform body and the distance measuring device described above, and the distance measuring device is arranged on the movable platform body.
  • the movable platform includes: an aircraft, a vehicle, a ship, or a robot.
  • the distance measuring device in the embodiment of the present invention can be applied to a movable platform, and the distance measuring device can be installed on the platform body of the movable platform.
  • the movable platform with the distance measuring device can measure the external environment, for example, measure the distance between the movable platform and obstacles for purposes such as obstacle avoidance, and perform two-dimensional or three-dimensional mapping of the external environment.
  • the movable platform includes at least one of an aircraft, a vehicle, a remote control car, a robot, and a ship.
  • the ranging device is applied to an aircraft, the platform body is the fuselage of the aircraft.
  • the distance measuring device is applied to a vehicle, the platform body is the body of the vehicle.
  • the vehicle may be an autonomous vehicle or a semi-autonomous vehicle, which is not limited here.
  • the platform body is the body of the remote control car.
  • the ranging device is applied to a robot, the platform body is a robot.
  • the ranging device and the movable platform of the present application include the aforementioned packaging structure, they have the same advantages as the aforementioned packaging structure.

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Abstract

一种二极管芯片的封装结构及方法、测距装置以及可移动平台，其中，封装结构包括：基板，包括第一表面和与第一表面相对的第二表面；二极管芯片，二极管芯片包括感光区域和位于感光区域外侧的非感光区域，感光区域为用于出射光的出光区或者为用于接收光的受光区，感光区域及非感光区域位于二极管芯片的第一侧，二极管芯片的第二侧设置于基板的第一表面，第二侧与第一侧相对；第一封装体，其至少覆盖二极管芯片的感光区域，第一封装体为透明绝缘材料；第二封装体，位于基板的第一表面，第二封装体与第一封装体的至少部分边缘抵接，第二封装体包括非透明绝缘材料。

Description

二极管芯片的封装结构及方法、测距装置、可移动平台
说明书
技术领域
本申请涉及集成电路领域，更具体地涉及一种二极管芯片的封装结构及方法、测距装置、可移动平台。
背景技术
如激光雷达，测距仪等基于TOF原理的距离检测设备其包括雪崩二极管(Avalanche Photo Diode，简称APD)和激光二极管等二极管，其中，雪崩二极管广泛用于弱光检测，激光二极管则用于发射激光脉冲序列。
带引脚的陶瓷芯片载体(CLCC)封装、金属TO封装和透明塑封封装是目前常用的几种封装方式，其中，TO封装技术是指晶体管外形(Transistor Outline)或者通孔(Through-hole)封装技术，也就是全封闭式封装技术但这几种封装方式均具有各自的缺点，比如CLCC封装其成本高，而金属TO封装则封装效率低，成本高，且不能应用于表面封装技术(Surface Mounted Technology，SMT)，而透明塑封技术则封装难度高，容易出现翘曲现象，如图1和图2所示，进而导致二极管芯片与基板分层，焊线被拉断，无法贴膜切割等问题。
因此，为了解决上述技术问题需要对目前二极管芯片的封装进行改进。
发明内容
为了解决上述问题中的至少一个而提出了本申请。本申请第一方面提供一种二极管芯片的封装结构，包括：基板，包括第一表面和与第一表面相对的第二表面；二极管芯片，二极管芯片包括感光区域和位于感光区域外侧的非感光区域，感光区域为用于出射光的出光区或者为用于接收光的受光区，感光区域及非感光区域位于二极管芯片的第一侧，二极管芯片的第二侧设置于基板的第一表面，第二侧与第一侧相对；第一封装体，其至少覆盖二极管芯片的感光区域，第一封装体为透明绝缘材料；第二封装体，位于基板的第一表面，第二封装体与第一封装体的至少部分边缘抵接，第二封装体包括非透明绝缘材料。本申请第二方面提供一种二极管芯片的封装方法，所述方法包括：
提供基板，所述基板包括第一表面和与所述第一表面相对的第二表面，
在所述基板的第一表面用于设置二极管芯片区域的外围形成第二封装体，所述第二封装体具有开口，所述第二封装体包括非透明绝缘材料；
提供包括感光区域和位于所述感光区域外侧的非感光区域的二极管芯片，所述感光区域及所述非感光区域位于所述二极管芯片的第一侧，并将所述二极管芯片的第二侧贴装于所述基板的第一表面，所述感光区域为用于出射光的出光区或者为用于接收光的受光区，所述第二封装体的开口至少露出所述二极管芯片的所述感光区域，所述第一侧和所述第二侧相对；
形成位于所述开口内并至少覆盖所述二极管芯片的感光区域的第一封装体，其中，所述第二封装体与所述第一封装体的至少部分边缘抵接，所述第一封装体为透明绝缘材料。
本申请第三方面提供一种二极管芯片的封装方法，所述方法包括：
提供基板，所述基板包括第一表面和与所述第一表面相对的第二表面；
提供包括感光区域和位于所述感光区域外侧的非感光区域的二极管芯片，所述感光区域及所述非感光区域位于所述二极管芯片的第一侧，并将所述二极管芯片的第二侧贴装于所述基板的第一表面，所述感光区域为用于出射光的出光区或者为用于接收光的受光区，所述第二侧与所述第一侧相对；
形成至少覆盖所述二极管芯片的感光区域的第一封装体，其中所述第一封装体为透明绝缘材料；
在所述基板的第一表面形成第二封装体，所述第二封装体与所述第一封装体的至少部分边缘抵接，所述第二封装体包括非透明绝缘材料。
本申请第四方面提供一种测距装置，所述测距装置包括前述的二极管芯片的封装结构。
本申请第五方面提供一种可移动平台，所述可移动平台包括：可移动平台本体；以及前述的测距装置，设置于所述可移动平台本体。
本申请的封装结构及方法，其将非透明绝缘材料的第二封装体和透明绝缘材料的第一封装体共同用于对二极管芯片的封装，从而阻断了封装过程中封装体应力的连续性，进而解决了封装结构的翘曲问题，并且降低了封装成本和封装难度，且适合用于表面封装技术。
附图说明
图1示出了常规的通过透明塑封对二极管进行封装后的俯视示意图；
图2示出了常规的通过透明塑封对二极管进行封装后的剖面示意图；
图3示出了本申请一实施例中的二极管芯片的封装结构的剖面示意图；
图4示出了图3中的二极管芯片的封装结构的俯视示意图；
图5示出了本申请另一实施例中的二极管芯片的封装结构的剖面示意图；
图6示出了图5中的二极管芯片的封装结构的俯视示意图；
图7示出了本申请一实施例中的激光二极管芯片的封装结构的剖面示意图；
图8示出了图7中的激光二极管芯片的封装结构的俯视示意图；
图9示出了本申请另一实施例中的激光二极管芯片的封装结构的剖面示意图；
图10示出了图9中的激光二极管芯片的封装结构的俯视示意图；
图11示出了本申请又一实施例中的二极管芯片的封装结构的剖面示意图；
图12示出了图11中的二极管芯片的封装结构的俯视示意图；
图13示出了本申请再一实施例中的二极管芯片的封装结构的剖面示意图；
图14示出了图13中的二极管芯片的封装结构的俯视示意图；
图15示出了本申请一实施例中的二极管芯片的封装方法的流程图；
图16至图20示出了本申请一实施例中的二极管芯片的封装方法的各个步骤依次执行所获得的结构的示意图；
图21示出了本申请一实施例中的将温度传感器和二极管芯片一起封装前封装结构的俯视示意图；
图22示出了本申请一实施例中的将温度传感器和二极管芯片一起封装后封装结构的俯视示意图；
图23示出了本申请另一实施例中的二极管芯片的封装方法的流程图；
图24至图27示出了本申请再一实施例中的二极管芯片的封装方法的各个步骤依次执行所获得的结构的示意图；
图28示出了本申请又一实施例中的将温度传感器和二极管芯片一起封装前封装结构的俯视示意图；
图29示出了本申请又一实施例中的将温度传感器和二极管芯片一起封装后封装结构的俯视示意图；
图30示出了本发明一实施例中的测距装置的架构示意图；
图31示出了本发明一个实施例中的测距装置的示意图。
具体实施方式
为了使得本申请的目的、技术方案和优点更为明显，下面将参照附图详细描述根据本申请的示例实施例。显然，所描述的实施例仅仅是本申请的一部分实施例，而不是本申请的全部实施例，应理解，本申请不受这里描述的示例实施例的限制。基于本申请中描述的本申请实施例，本领域技术人员在没有付出创造性劳动的情况下所得到的所有其它实施例都应落入本申请的保护范围之内。
在下文的描述中，给出了大量具体的细节以便提供对本申请更为彻底的理解。然而，对于本领域技术人员而言显而易见的是，本申请可以无需一个或多个这些细节而得以实施。在其他的例子中，为了避免与本申请发生混淆，对于本领域公知的一些技术特征未进行描述。
应当理解的是，本申请能够以不同形式实施，而不应当解释为局限于这里提出的实施例。相反地，提供这些实施例将使公开彻底和完全，并且将本申请的范围完全地传递给本领域技术人员。
在此使用的术语的目的仅在于描述具体实施例并且不作为本申请的限制。在此使用时，单数形式的“一”、“一个”和“所述/该”也意图包括复数形式，除非上下文清楚指出另外的方式。还应明白术语“组成”和/或“包括”，当在该说明书中使用时，确定所述特征、整数、步骤、操作、元件和/或部件的存在，但不排除一个或更多其它的特征、整数、步骤、操作、元件、部件和/或组的存在或添加。在此使用时，术语“和/或”包括相关所列项目的任何及所有组合。
下面结合附图，对本申请的二极管芯片的封装结构、封装方法、测距装置和可移动平台进行详细说明。在不冲突的情况下，下述的实施例及实施方式中的特征可以相互组合。
为了解决前文中提到的翘曲等问题，本申请提供了一种二极管芯片的封装结构，包括：基板，包括：基板，包括第一表面和与第一表面相对的第二表面；二极管芯片，二极管芯片包括感光区域和位于感光区域外侧的非感光区域，感光区域为用于出射光的出光区或者为用于接收光的受光区，感光区域及非感光区域位于二极管芯片的第一侧，二极管芯片的第二侧设置于基板的第一表面，第二侧与第一侧相对；第一封装体，其至少覆盖二极管芯片的感光区域，第一封装体为透明绝缘材料；第二封装体，位于基板的第一表面，第二封装体与第一封装体的至少部分边缘抵接，第二封装体包括非透明绝缘材料。
本申请的封装结构其将非透明绝缘材料的第二封装体和透明绝缘材料的第一封装体共同用于对二极管芯片的封装，从而阻断了封装过程中封装体应力的连续性，进而解决了 封装结构的翘曲问题，并且降低了封装成本和封装难度，且适合用于表面封装技术(Surface Mounted Technology，SMT)。
下面参照附图，对本申请的二极管芯片的封装结构的一个具体实施例进行详细的说明。在不冲突的情况下，下述的实施例及实施方式中的特征可以相互组合。
在一个实施例中，如图3所示，本申请的二极管芯片的封装结构300包括基板310，基板310包括第一表面和与第一表面相对的第二表面。
在一个示例中，如图3至图10所示，基板310可以是导电框架，例如金属框架(lead frame)，导电框架的不同部分可以用于不同的导电布线，且其还可以具有承载部，用于承载二极管芯片320。
在另一个示例中，如图11至图14所示，基板310包括基底，在基底的第一表面铺设有第一导电布线和一个或多个第二导电布线。基板310可以包括PCB基板(Printed Circuit Board，印制电路板)、陶瓷基板等等各种类型的基板，陶瓷基板可以是氮化铝或氧化铝基板。
在一个示例中，当基板310为PCB基板时，则基板310的基底可以为酚醛纸质层压板﹐环氧纸质层压板﹐聚酯玻璃毡层压板﹐环氧玻璃布层压板、聚酯薄膜﹐聚酰亚胺薄膜﹐或氟化乙丙烯薄膜等，在另一个示例中，当基板310为陶瓷基板，陶瓷基板可以是指将金属例如铜箔在高温下直接键合到氧化铝(Al 2O 3)或氮化铝(AlN)陶瓷基底表面(单面或双面)上的特殊工艺板，其中，铜箔作为导电布线，以和二极管芯片320等进行电连接，则陶瓷基板的基底可为陶瓷基底，例如氧化铝或氮化铝。
进一步地，如图3至图14所示，二极管芯片的封装结构300还包括二极管芯片320，二极管芯片320包括感光区域321和位于感光区域321外侧的非感光区域，感光区域321为用于出射光的出光区或者为用于接收光的受光区，感光区域321位于二极管芯片320的第一侧，二极管芯片320与第一侧相对的第二侧设置于基板310的第一表面，例如，二极管芯片320的第二侧可以贴装于基板310的第一表面，例如二极管芯片320通过导电粘接层贴装于基板310的第一表面，或者也可以通过键合工艺贴装于基板310的第一表面，键合工艺包括但不限于共晶键合、直接键合等。
在一个示例中，如图11至图14所示，二极管芯片320为激光二极管芯片，则激光二极管芯片的感光区域321为用于出射光的出光区，激光二极管芯片包括一个或多个垂直腔表面发射激光二极管。在另一个示例中，如图3至图10所示，二极管芯片320为雪崩二 极管芯片，雪崩二极管芯片的感光区域321为用于接收光的受光区，雪崩二极管芯片可以包括一个或多个雪崩二极管。上述芯片的类型仅作为示例，本申请的方案也可以是适用于其他适合的类型的二极管芯片320。
在一个示例中，如图11所示，基板310包括第一导电布线311和一个或多个第二导电布线312，第二导电布线312与第一导电布线311彼此绝缘，当第二导电布线312的数量为多个时，各个第二导电布线312之间彼此绝缘，二极管芯片320贴装于第一导电布线311例如通过导电粘接层贴装于第一导电布线，二极管芯片320包括一个或多个焊盘，各个焊盘分别连接一个第二导电布线312，可选地，每个第二导电布线312可以包括引脚(pin)，引脚用于连接二极管芯片320的焊盘。在一个示例中，如图4所示，二极管芯片320包括一个或多个二极管，各个二极管分别对应一个焊盘，则各个焊盘分别对应一个第二导电布线312例如分别对应连接一个引脚。可选地，如图3至图14所示，各个焊盘322与其所对应的第二导电布线之间通过连接线330(也可以称键合线)电连接。其中，连接线330可以使用以下连接线中的至少一种：铝线、金线、银线、铜线、铝带、铜片或铝包铜线等。
可选地，通过导电粘接层(未示出)将二极管芯片320贴装在基板310上，形成电通路，其中，导电粘接层的材料包括导电的银浆、焊料或导电的芯片连接薄膜(die attach film，DAF)，其中，导电的银浆可以是普通的银浆或者也可以是纳米银浆，焊料包括但不限于AuSn20，可选地，为了保证贴装位置精度及高散热性，采用AuSn20共晶进行装片。由于采用例如AuSn20的焊料作为导电粘接层，其相比其他含有挥发性的助焊剂的焊料(例如锡膏焊料)基本上无挥发或低挥发，因此，不会产生由于焊料中具有挥发性物质而污染二极管芯片320的问题。
在另一个示例中，如图3至图10所示，当基板310为导电框架，导电框架包括用作第一导电布线的第一框架部分和用作第二导电布线的一个或多个第二框架部分。导电框架既可以用于起到支撑二极管芯片320的作用，又可以将二极管芯片320引出和外部电路进行连接。其中第一框架部分可以包括承载部，承载部用于承载二极管芯片320，以及与承载部连接的引脚，以将二极管芯片320的电路引出，其中引脚和承载部可以是一体成型的，引脚的形状可以根据实际需要合理设定，在此不做具体限定。导电框架的第二框架部分用作第二导电布线，用于和二极管芯片320的焊盘进行连接，其中，第二框架部分可以仅包括引脚。
例如，二极管芯片320包括的各个二极管可以包括位于第一侧的第一电极以及位于第 二侧的第二电极，其中，例如当二极管芯片320为雪崩二极管芯片时，第一电极可以对应为二极管的正极，第二电极可以对应为二极管的负极，再例如，当二极管芯片320为激光二极管芯片时，第一电极可以对应为二极管的正极，第二电极可以对应为二极管的负极。在其他示例中，在保证感光区域321位于第一侧的同时，还可以将第一电极和第二电极进行交换，例如第一电极为阴极，第二电极为阳极。可选地，位于第一侧的第一电极可以通过粘接而连接到同一第一导电布线。
进一步，本申请的二极管芯片的封装结构300还包括第二封装体360，该第二封装体360位于基板310的第一表面，例如，第二封装体360覆盖并包覆位于感光区域321外侧的基板310的至少部分第一表面，或者，覆盖并包覆位于感光区域321外侧的基板310的至少部分第一表面以及二极管芯片320的至少部分非感光区域。
第二封装体360包括非透明绝缘材料，该非透明绝缘材料可以是本领域技术人员熟知的任意适合的材料，例如非透明绝缘材料包括但不限于非透明的树脂材料，非透明的树脂材料包括非透明的热固性树脂，在成型过程中能软化或流动，具有可塑性，可制成一定形状，同时又发生化学反应而交联固化，非透明的树脂材料可以包括酚醛树脂、脲醛树脂、三聚氰胺－甲醛树脂、环氧树脂、不饱和树脂、聚氨酯、聚酰亚胺等热固性树脂中的至少一种，在一个具体示例中，使用环氧树脂作为第二封装体360，其中环氧树脂可以采用有填料物质或者是无填料物质的环氧树脂，还包括各种添加剂(例如，固化剂、改性剂、脱模剂、热色剂、阻燃剂等)，例如以酚醛树脂作为固化剂，以固体颗粒(例如硅微粉)等作为填料。示例性地，透明的树脂材料还可以包括硅胶。其中，非透明的树脂材料可以是通过在透明的树脂材料中添加非透明物质而形成的，例如可以添加例如黑色染料、反光固体颗粒等。
进一步，本申请的二极管芯片的封装结构300还包括第一封装体350，该第一封装体350至少覆盖二极管芯片320的感光区域321，其中第一封装体350为透明绝缘材料。例如，第一封装体350包覆整个二极管芯片320以及位于整个二极管芯片320外侧基板310的部分第一表面，第二封装体360包覆基板310位于第一封装体350外侧的第一表面。再例如，第二封装体360覆盖并包覆位于感光区域321外侧的基板310的至少部分第一表面以及二极管芯片320的至少部分非感光区域，则第一封装体350覆盖二极管芯片320的感光区域321及二极管芯片320的非感光区域未被第二封装体360覆盖的部分。
第一封装体350为透明绝缘材料，其中，透明绝缘材料可以包括以下材料中的至少一种：玻璃、透明的树脂材料，其中，透明的树脂材料包括透明的热固性树脂，在成型过程中能软化或流动，具有可塑性，可制成一定形状，同时又发生化学反应而交联固化，透明 的树脂材料可以包括酚醛树脂、脲醛树脂、三聚氰胺－甲醛树脂、环氧树脂、不饱和树脂、聚氨酯、聚酰亚胺等热固性树脂中的至少一种，在一个具体示例中，使用环氧树脂作为第一封装体350，其中环氧树脂可以采用有填料物质或者是无填料物质的环氧树脂，还包括各种添加剂(例如，固化剂、改性剂、脱模剂、热色剂、阻燃剂等)，例如以酚醛树脂作为固化剂，以固体颗粒(例如硅微粉)等作为填料。示例性地，透明的树脂材料还可以包括硅胶。
在一个示例中，当第二封装体360为非透明的树脂材料，而第一封装体350为透明的树脂材料时，如图5、图6、图9、图10、图13和图14所示，第一封装体350可以为在第二封装体360注塑成型之后注塑成型的，在一个示例中，第二封装体360中形成有豁口，第一封装体350填充豁口，通过设置该豁口，可以增加第一封装体350注塑成型过程中的液体流动性，可以使得多余的第一封装体350自豁口中流出，从而最终形成第一封装体350。
在一个示例中，第二封装体360还可以支撑第一封装体350，例如，部分第一封装体350可以位于部分第二封装体360上，从而使得第二封装体能够支撑第一封装体。
第二封装体360与第一封装体360的至少部分边缘抵接，在一个示例中，第一封装体350面向第二封装体360的侧壁与第二封装体360面向第一封装体350的侧壁相贴合，从而使得第二封装体360和第一封装体350能够密切结合共同对二极管芯片320以及承载二极管芯片320的基板310进行封装。
在一个示例中，如图3和图4所示，以及图7和图8所示，第一封装体350还可以通过透明的粘接胶340粘接于感光区域321处，例如，当第一封装体350为玻璃时，可以通过透明的粘接胶340粘接于感光区域321处，使用粘接胶340可以使得二极管芯片320的感光区域321能够接收到光或者出射光。
在一个示例中，如图4所示，当基板310为导电框架时，部分第二封装体360还填充在第二框架部分和第一框架部分之间的间隙中，部分第二封装体360还填充在相邻的第二框架部分之间的间隙中，以使得导电框架各部分之间能够物理连接，能够更加稳固的对二极管芯片320起到支撑作用，而由于第二封装体360为绝缘材料，因此，其还可以起到将不同框架部分进行隔离绝缘的作用。或者在其他示例中，还可以在第二框架部分和第一框架部分之间的间隙中和/或相邻的第二框架部分之间的间隙中填充第一封装体350。
在一个示例中，如图21、图22、图28和图29所示，封装结构还包括温度传感器370，温度传感器370设置于基板310的第一表面，且位于二极管芯片320的外侧，其中，第二 封装体360包覆温度传感器370，并且，通过将温度传感器370和二极管芯片320一起进行封装，且将温度传感器370包覆于非透明的绝缘材料中，可以避免温度传感器370受光干扰而影响其输出的问题，从而保证其对于二极管芯片320例如APD芯片温度校准的准确性，进而保证二极管芯片320能够在稳定的增益下工作。可选地，温度传感器370的数量可以是一个或者还可以是多个。
在一个示例中，如图21所示，温度传感器370上设置有至少一个焊盘371，其各个焊盘371可以对应连接到基板310上的对应的第三导电布线，例如当基板310为导电框架时，焊盘371可以通过连接线372连接到用作第三导电布线的第三框架部分，该第三框架部分和第二框架部分以及第一框架部分彼此隔离绝缘，可选地，温度传感器370的不同的焊盘对应不同的第三框架部分，且不同的第三框架部分之间彼此绝缘。通过这样的设置可以使得温度传感器370能够连接到基板310的第三导电布线，并可以通过第三导电布线电连接到外部电路，例如连接到控制器等。
在另一个示例中，第一封装体350包覆温度传感器370，或者，在其他示例中，第二封装体360和第一封装体350共同包覆温度传感器370，进而起到对温度传感器370的保护作用。
下文将以APD芯片为例，对本申请的二极管芯片320的封装方法进行描述，可以理解的是，在不冲突的情况下，应用于APD芯片的封装方法同样可以适用于激光二极管芯片例如垂直腔表面发射激光二极管芯片。
在一个实施例中，如图15所示，一种二极管芯片的封装方法1500，包括以下步骤S1501至S1504：
首先，在步骤S1501中，提供基板310，基板310包括第一表面和与第一表面相对的第二表面，如图16所示。
如图16所示的基板310为导电框架，在不冲突的情况下，以导电框架为基板310的封装方法也同样适用于例如PCB基板或陶瓷基板等。
如图16所示的导电框架既可以用于起到支撑二极管芯片320的作用，又可以将二极管芯片320引出和外部电路进行连接。当基板310为导电框架时，其可以包括第一框架部分，用作第一导电布线311的第一框架部分可以包括承载部3111，承载部3111用于承载二极管芯片320，以及与承载部3111连接的引脚3112，以将二极管芯片320的电路引出，其中引脚和承载部可以是一体成型的，引脚的形状可以根据实际需要合理设定，在此不做 具体限定。导电框架还包括第二框架部分，其用作第二导电布线312，第一框架部分和第二框架部分用于和二极管芯片320的焊盘进行连接，其中，第二框架部分可以仅包括引脚。
接着，在步骤S1502中，提供包括感光区域321和位于感光区域321外侧的非感光区域的二极管芯片320，并将二极管芯片320的第二侧贴装于基板310的第一表面，第二侧与第一侧相对，感光区域321及非感光区域位于二极管芯片320的第一侧，感光区域321为用于出射光的出光区或者为用于接收光的受光区，如图17所示。
如图17所示的二极管芯片320为APD芯片，该APD芯片可以包括一个或多个的APD，则感光区域321包括每个APD的受光区，而当二极管芯片320为激光二极管芯片时，激光二极管芯片可以包括一个或多个激光二极管，则感光区域321包括每个激光二极管的出光区。
感光区域321位于二极管芯片320的第一侧，二极管芯片320与第一侧相对的第二侧设置于基板310的第一表面，例如，二极管芯片320的第二侧可以贴装于基板310的第一表面，例如二极管芯片320通过导电粘接层贴装于基板310的第一表面，或者也可以通过键合工艺贴装于基板310的第一表面，键合工艺包括但不限于共晶键合、直接键合等。
基板310包括第一导电布线和一个或多个第二导电布线，第二导电布线与第一导电布线彼此绝缘，当第二导电布线的数量为多个时，各个第二导电布线之间彼此绝缘，二极管芯片320贴装于第一导电布线，例如，如图17所示，当基板310为导电框架时，二极管芯片320贴装于用作第一导电布线311的第一框架部分的第一表面例如贴装于承载部的第一表面。
在一个示例中，在将二极管芯片320贴装于基板310上之后，还包括：如图18所示，将各个焊盘322与其所对应的第二导电布线通过连接线330电连接的步骤。二极管芯片320包括一个或多个焊盘322，各个焊盘322分别连接一个第二导电布线。例如，二极管芯片320包括一个或多个二极管，各个二极管分别对应一个焊盘322。
连接线330可以使用以下连接线中的至少一种：铝线、金线、银线、铜线、铝带、铜片或铝包铜线等。
连接线330可以通过键合工艺连接焊盘322和第二导电布线，例如，利用热、压力、超声波、激光等产生的能量将连接线330与载板焊盘322紧密焊合，从而实现焊盘322与基板310之间电气互连。
接着，在步骤S1503中，形成至少覆盖二极管芯片320的感光区域321的第一封装体350，其中第一封装体350为透明绝缘材料。
例如，如图19所示，通过透明的粘接胶340将第一封装体350(例如玻璃、或透明的树脂材料)粘接于二极管芯片320的感光区域321处。其中，第一封装体350可以是透明玻璃或者其他透明的树脂材料等，可选地，第一封装体350的形状和尺寸可以是预先制备好的，其可以和感光区域321大体一致或者还可以大于感光区域321的尺寸。例如，第一封装体350可以仅覆盖二极管芯片320的感光区域321，或者当有多个二极管的感光区域321时，则还可以覆盖相邻的感光区域321之间的间隔区域。
在一个示例中，二极管芯片320的焊盘322位于芯片的边缘区域，而感光区域321则位于焊盘322的内侧，第一封装体350还可以覆盖感光区域321以及焊盘322和感光区域321之间的部分非感光区域等。
通过粘接形成第一封装体350既可以起到对芯片的保护作用，又能够保证感官区域不被遮挡，使其能够正常工作。
接着，在步骤S1504中，在基板310的第一表面形成第二封装体360，第二封装体360与第一封装体350的至少部分边缘抵接。
例如，在第一封装体350外侧和感光区域321的外侧形成第二封装体360，第二封装体360覆盖并包覆位于感光区域321外侧的基板310的至少部分第一表面以及二极管芯片320的至少部分非感光区域，第二封装体360包括非透明绝缘材料。
第二封装体360的材料可以为非透明的树脂材料，而非透明的树脂材料则通常是在透明的树脂能添加例如黑色染料、固体颗粒等形成的，因此，其相比透明的树脂其在固化后的应力传递会被添加的物质所阻断，从而避免了采用透明塑封料注塑会产生翘曲而难以处理的问题。
第二封装体360的材料可以是热固性材料，可以通过注塑成型工艺在第一封装体350外侧和感光区域321的外侧形成第二封装体360，注塑成型可以为热压注塑成型工艺，或者其他适合的注塑成型工艺。
示例性地，注塑成型工艺使用液体的非透明的树脂材料，以使液体的非透明的树脂材料在固化前能够覆盖并包覆基板310的位于感光区域321外侧的基板310的至少部分第一表面以及二极管芯片320的至少部分非感光区域。
在一个示例中，在第一封装体350外侧和感光区域321的外侧形成第二封装体360的步骤包括：提供模具，将承载有二极管芯片320的基板310放置于模具中，其中，模具可以为任何适合的模具，在此不做具体限定，随后，在模具中注入熔融状态的非透明的树脂材料，液态的树脂材料均匀涂覆于基板310以及部分二极管芯片320上，覆盖并包覆位于 二极管芯片320的感光区域321外侧的基板310的至少部分第一表面以及二极管芯片320的至少部分非感光区域，接着，进行固化处理，以使非透明的树脂材料凝固，以形成第二封装体360，固化可以为热固化工艺，具体的根据实际使用的第二封装体360的材料而合理选择适合的固化方式，最后进行脱模。
形成的第二封装体360的顶面高于二极管芯片320的顶面并高于连接线330的顶面，其大体和第一封装体350的顶面齐平，可选地，第一封装体350面向第二封装体350的侧壁与第二封装体360面向第一封装体350的侧壁相贴合，从而密封二极管芯片320，对芯片提供物理和电气保护，防止外界干扰。
在一个示例中，本申请的方法还包括：如图21所示，在形成第二封装体360之前，提供温度传感器370，并将温度传感器370贴装于基板310的第一表面，其中，温度传感器370位于二极管芯片320的外侧；在形成第二封装体360时，第二封装体360还覆盖温度传感器370，如图22所示。将温度传感器370包覆于非透明的绝缘材料中，可以避免温度传感器370受光干扰而影响其输出的问题，从而保证其对于二极管芯片320例如APD芯片温度校准的准确性，进而保证二极管芯片320能够在稳定的增益下工作。
温度传感器370上设置有至少一个焊盘371，例如包括两个焊盘，在将温度传感器370贴装于基板310之后，还包括将其各个焊盘371分别通过连接线372可以对应连接到基板310上的对应的第三导电布线，例如当基板310为导电框架时，焊盘371可以通过连接线372连接到用作第三导电布线的第三框架部分，该第三框架部分和第二框架部分以及第一框架部分彼此隔离绝缘，可选地，温度传感器370的不同的焊盘对应不同的第三框架部分，且不同的第三框架部分之间彼此绝缘。通过这样的设置可以使得温度传感器370能够连接到基板310的第三导电布线，并可以通过第三导电布线电连接到外部电路，例如连接到控制器等。
在一个示例中，如图21所示，部分第二封装体360还填充在第二框架部分和第一框架部分之间的间隙中，部分第二封装体360还填充在相邻的第二框架部分之间的间隙中。
本申请的方法还包括切割步骤，通过切割将芯片进行分离，例如可以同时对多个二极管芯片320进行封装，通过切割将各个二极管芯片320进行分离。
在本申请的另一个实施例中，还可以通过以下封装方法来制备获得封装结构，在不冲突的前提下，前文所描述的细节也可以适用于本实施例。
如图23所示，本实施例中的封装方法2300包括以下步骤S2301至步骤S2304：
首先，在步骤S2301中，提供基板310，基板310包括第一表面和与第一表面相对的 第二表面。
如图24所示的基板310为导电框架，基板310还可以是例如PCB基板或陶瓷基板等。在不冲突的情况下，以导电框架为基板310的封装方法也同样适用于例如PCB基板或陶瓷基板等。具体地导电框架的细节可以参考前文，在此不再重复。
接着，在步骤S2302中，在基板310的第一表面用于设置二极管芯片区域的外围形成第二封装体360，第二封装体360具有开口，第二封装体360包括非透明绝缘材料，如图25所示。
如图25所示，第二封装体360的材料可以是非透明树脂材料，可以通过注塑工艺在基板310用于设置二极管芯片320区域的外围形成第二封装体360，第二封装体360可以形成为侧墙，围绕二极管芯片320区域的外围四周设置，也即第二封装体360具有开口，该开口至少露出二极管芯片320所在的区域，或者，该开口至少露出二极管芯片以及基板310上用于和二极管芯片的焊盘连接的至少部分第二导电引线，以便在二极管芯片贴装之后能够再将焊盘通过连接线连接第二导电引线。在一个示例中，当需要将温度传感器370封装至后续形成的第一封装体内时，该开口还可以露出基板310上预定设置温度传感器370的区域，以及温度传感器370的焊盘需连接的至少部分第三导电布线。
在一个示例中，在基板310用于设置二极管芯片320区域的外围形成第二封装体的步骤包括：提供模具，将基板放置于模具中，其中，模具可以为任何适合的模具，在此不做具体限定，随后，在模具中注入熔融状态的非透明的树脂材料，液态的树脂材料涂覆于基板用于设置二极管芯片区域的外围，接着，进行固化处理，以使非透明的树脂材料凝固，以形成第二封装体，固化可以为热固化工艺，具体的根据实际使用的第二封装体的材料而合理选择适合的固化方式，最后进行脱模。
在一个示例中，还包括在第二封装体360中形成至少一个豁口(未示出)，通过设置该豁口可以有利于后续注塑形成第一封装体350的过程中，用于形成第一封装体350的透明树脂材料能够顺利流动。
在一个示例中，本申请的方法还包括：如图28所示，在形成第二封装体360之前，提供温度传感器370，并将温度传感器370贴装于基板310的第一表面，其中，温度传感器370位于预定设置二极管芯片320的区域的外侧；在形成第二封装体360时，第二封装体360还覆盖温度传感器370，如图29所示。将温度传感器370包覆于非透明的绝缘材料中，可以避免温度传感器370受光干扰而影响其输出的问题，从而保证其对于二极管芯片320例如APD芯片温度校准的准确性，进而保证二极管芯片320能够在稳定的增益下工作。
在一个示例中，部分第二封装体360还填充在第二框架部分和第一框架部分之间的间隙中，部分第二封装体360还填充在相邻的第二框架部分之间的间隙中。
接着，在步骤S2303中，提供包括感光区域321和位于感光区域321外侧的非感光区域的二极管芯片320，并将二极管芯片320的第二侧贴装于基板310的第一表面，第二侧与第一侧相对，感光区域321及非感光区域位于二极管芯片320的第一侧，感光区域321为用于出射光的出光区或者为用于接收光的受光区，第二封装体360的开口至少露出二极管芯片320的感光区域321，如图26所示。
如图26所示的二极管芯片320为APD芯片，该APD芯片可以包括一个或多个的APD，则感光区域321包括每个APD的受光区，而当二极管芯片320为激光二极管芯片时，激光二极管芯片可以包括一个或多个激光二极管，则感光区域321包括每个激光二极管的出光区。
感光区域321位于二极管芯片320的第一侧，二极管芯片320与第一侧相对的第二侧设置于基板310的第一表面，例如，二极管芯片320的第二侧可以贴装于基板310的第一表面，例如二极管芯片320通过导电粘接层贴装于基板310的第一表面，或者也可以通过键合工艺贴装于基板310的第一表面，键合工艺包括但不限于共晶键合、直接键合等。
基板310包括第一导电布线和一个或多个第二导电布线，第二导电布线与第一导电布线彼此绝缘，当第二导电布线的数量为多个时，各个第二导电布线之间彼此绝缘，二极管芯片320贴装于第一导电布线，例如，如图26所示，当基板310为导电框架时，二极管芯片320贴装于用作第一导电布线的第一框架部分的第一表面例如贴装于承载部的第一表面。
在一个示例中，在将二极管芯片320贴装于基板310上之后，还包括：将各个焊盘322与其所对应的第二导电布线通过连接线330电连接的步骤。二极管芯片320包括一个或多个焊盘322，各个焊盘322分别连接一个第二导电布线。例如，二极管芯片320包括一个或多个二极管，各个二极管分别对应一个焊盘322。
连接线330可以使用以下连接线330中的至少一种：铝线、金线、银线、铜线、铝带、铜片或铝包铜线等。
连接线330可以通过键合工艺连接焊盘322和第二导电布线，例如，利用热、压力、超声波、激光等产生的能量将连接线330与载板焊盘322紧密焊合，从而实现焊盘322与基板310之间电气互连。
接着，在步骤S2304中，形成位于开口内并至少覆盖二极管芯片320的感光区域321 的第一封装体350，其中第二封装体360与第一封装体350的至少部分边缘抵接，第一封装体350为透明绝缘材料。
可以通过任意适合的方法形成第一封装体350例如，通过注塑成型形成位于第二封装体360的开口内并至少覆盖二极管芯片320的感光区域321的第一封装体350，其中，部分第一封装体350还填充豁口，通过第一封装体350实现对芯片的包覆，并且由于第一封装体350为透明绝缘材料，因此能够保证光线顺利达到二极管芯片320的感光区。并且相比通过一次形成封装体来封装芯片的方案，本申请的方案先注塑形成第二封装体360，再注塑形成第一封装体350，从而阻断了第一封装体350(例如透明塑封料)应力的传递，从而有效改善透明塑封料注塑后的翘曲问题，避免了因为翘曲而导致的芯片与基板310分层，键合线(wire bond)被拉断，无法贴膜切割等问题。
例如，可以提供模具，将基板310以及基板310上所承载的第二封装体360、二极管芯片320等置于模具中，之后，将液体的透明树脂材料填充至开口内，并且部分树脂材料还会自第二封装体360的豁口流出，之后，进行固化处理，以使透明的树脂材料凝固，以形成第一封装体350，固化可以为热固化工艺，具体的根据实际使用的第一封装体350的材料而合理选择适合的固化方式，最后进行脱模。
第一封装体350为透明绝缘材料，其中，透明绝缘材料可以包括以下材料中的至少一种：透明的树脂材料，其中，透明的树脂材料包括透明的热固性树脂，在成型过程中能软化或流动，具有可塑性，可制成一定形状，同时又发生化学反应而交联固化，透明的树脂材料可以包括酚醛树脂、脲醛树脂、三聚氰胺－甲醛树脂、环氧树脂、不饱和树脂、聚氨酯、聚酰亚胺等热固性树脂中的至少一种。示例性地，透明的树脂材料还可以包括硅胶。
可选地，第一封装体350面向第二封装体360的侧壁与第二封装体360面向第一封装体350的侧壁相贴合，从而密封二极管芯片320，对芯片提供物理和电气保护，防止外界干扰。
本申请的方法还包括切割步骤，通过切割将芯片进行分离，例如可以同时对多个二极管芯片320进行封装，通过切割将各个二极管芯片320进行分离。
值得一提是，对于完成的封装方法还可能包括其他步骤，在此不再一一描述。
综上所述，根据本申请的封装结构及封装方法，本申请的封装结构其将非透明绝缘材料的第二封装体360和透明绝缘材料的第一封装体350共同用于对二极管芯片的封装，从而阻断了封装过程中封装体应力的连续性，进而解决了封装结构的翘曲问题，并且降低了封装成本和封装难度，且适合用于表面封装技术(Surface Mounted Technology，SMT)。
本发明各个实施例提供的方案可以应用于测距装置，该测距装置可以是激光雷达、激 光测距设备等电子设备。在一种实施方式中，测距装置用于感测外部环境信息，例如，环境目标的距离信息、方位信息、反射强度信息、速度信息等。一种实现方式中，测距装置可以通过测量测距装置和探测物之间光传播的时间，即光飞行时间(Time-of-Flight，TOF)，来探测探测物到测距装置的距离。或者，测距装置也可以通过其他技术来探测探测物到测距装置的距离，例如基于相位移动(phase shift)测量的测距方法，或者基于频率移动(frequency shift)测量的测距方法，在此不做限制。
为了便于理解，以下将结合图30所示的测距装置100对测距的工作流程进行举例描述。
作为示例，测距装置100包括发射电路、扫描模块和探测模块，发射模块用于发射光脉冲序列，以探测目标场景；扫描模块用于将所述发射模块发射的光脉冲序列的传播路径依次改变至不同方向出射，形成一个扫描视场；探测模块用于接收经物体反射回的光脉冲序列，以及根据所述反射回的光脉冲序列确定所述物体相对所述测距装置的距离和/或方位，以生成点云点。
具体地，如图30所示，发射模块包括发射电路110；探测模块包括接收电路120、采样电路130和运算电路140。
发射电路110可以出射光脉冲序列(例如激光脉冲序列)。接收电路120可以接收经过被探测物反射的光脉冲序列，也即通过其获得回波信号的脉冲波形，并对该光脉冲序列进行光电转换，以得到电信号，再对电信号进行处理之后可以输出给采样电路130。采样电路130可以对电信号进行采样，以获取采样结果。运算电路140可以基于采样电路130的采样结果，以确定测距装置100与被探测物之间的距离，也即深度。
可选地，该测距装置100还可以包括控制电路150，该控制电路150可以实现对其他电路的控制，例如，可以控制各个电路的工作时间和/或对各个电路进行参数设置等。
应理解，虽然图30示出的测距装置中包括一个发射电路、一个接收电路、一个采样电路和一个运算电路，用于出射一路光束进行探测，但是本申请实施例并不限于此，发射电路、接收电路、采样电路、运算电路中的任一种电路的数量也可以是至少两个，用于沿相同方向或分别沿不同方向出射至少两路光束；其中，该至少两束光路可以是同时出射，也可以是分别在不同时刻出射。一个示例中，该至少两个发射电路中的发光芯片封装在同一个模块中。例如，每个发射电路包括一个激光发射芯片，该至少两个发射电路中的激光发射芯片中的die封装到一起，容置在同一个封装空间中。
一些实现方式中，除了图30所示的电路，测距装置100还可以包括扫描模块，用于将发射电路出射的至少一路光脉冲序列(例如激光脉冲序列)改变传播方向出射，以对视场进行扫描。示例性地，所述扫描模块在测距装置的视场内的扫描区域随着时间的累积而 增加。
其中，可以将包括发射电路110、接收电路120、采样电路130和运算电路140的模块，或者，包括发射电路110、接收电路120、采样电路130、运算电路140和控制电路150的模块称为测距模块，该测距模块可以独立于其他模块，例如，扫描模块。
测距装置中可以采用同轴光路，也即测距装置出射的光束和经反射回来的光束在测距装置内共用至少部分光路。例如，发射电路出射的至少一路激光脉冲序列经扫描模块改变传播方向出射后，经探测物反射回来的激光脉冲序列经过扫描模块后入射至接收电路。或者，测距装置也可以采用异轴光路，也即测距装置出射的光束和经反射回来的光束在测距装置内分别沿不同的光路传输。图31示出了本发明的测距装置采用同轴光路的一种实施例的示意图。
测距装置200包括测距模块210，测距模块210包括发射器203(可以包括上述的发射电路)、准直元件204、探测器205(可以包括上述的接收电路、采样电路和运算电路)和光路改变元件206。测距模块210用于发射光束，且接收回光，将回光转换为电信号。其中，发射器203可以用于发射光脉冲序列。在一个实施例中，发射器203可以发射激光脉冲序列。可选的，发射器203发射出的激光束为波长在可见光范围之外的窄带宽光束。准直元件204设置于发射器的出射光路上，用于准直从发射器203发出的光束，将发射器203发出的光束准直为平行光出射至扫描模块。准直元件还用于会聚经探测物反射的回光的至少一部分。该准直元件204可以是准直透镜或者是其他能够准直光束的元件。
在图31所示实施例中，通过光路改变元件206来将测距装置内的发射光路和接收光路在准直元件204之前合并，使得发射光路和接收光路可以共用同一个准直元件，使得光路更加紧凑。在其他的一些实现方式中，也可以是发射器203和探测器205分别使用各自的准直元件，将光路改变元件206设置在准直元件之后的光路上。
在图31所示实施例中，由于发射器203出射的光束的光束孔径较小，测距装置所接收到的回光的光束孔径较大，所以光路改变元件可以采用小面积的反射镜来将发射光路和接收光路合并。在其他的一些实现方式中，光路改变元件也可以采用带通孔的反射镜，其中该通孔用于透射发射器203的出射光，反射镜用于将回光反射至探测器205。这样可以减小采用小反射镜的情况中小反射镜的支架会对回光的遮挡。
在图31所示实施例中，光路改变元件偏离了准直元件204的光轴。在其他的一些实现方式中，光路改变元件也可以位于准直元件204的光轴上。
测距装置200还包括扫描模块202。扫描模块202放置于测距模块210的出射光路上，扫描模块202用于改变经准直元件204出射的准直光束219的传输方向并投射至外界环境，并将回光投射至准直元件204。回光经准直元件204汇聚到探测器205上。探测器205 可以包括前述的二极管芯片的封装结构例如包括雪崩二极管芯片的封装结构，以用于将接收到的回光转换为电信号。
在一个实施例中，扫描模块202可以包括至少一个光学元件，用于改变光束的传播路径，其中，该光学元件可以通过对光束进行反射、折射、衍射等等方式来改变光束传播路径，例如所述光学元件包括至少一个具有非平行的出射面和入射面的光折射元件。例如，扫描模块202包括透镜、反射镜、棱镜、振镜、光栅、液晶、光学相控阵(Optical Phased Array)或上述光学元件的任意组合。一个示例中，至少部分光学元件是运动的，例如通过驱动模块来驱动该至少部分光学元件进行运动，该运动的光学元件可以在不同时刻将光束反射、折射或衍射至不同的方向。在一些实施例中，扫描模块202的多个光学元件可以绕共同的轴209旋转或振动，每个旋转或振动的光学元件用于不断改变入射光束的传播方向。在一个实施例中，扫描模块202的多个光学元件可以以不同的转速旋转，或以不同的速度振动。在另一个实施例中，扫描模块202的至少部分光学元件可以以基本相同的转速旋转。在一些实施例中，扫描模块的多个光学元件也可以是绕不同的轴旋转。在一些实施例中，扫描模块的多个光学元件也可以是以相同的方向旋转，或以不同的方向旋转；或者沿相同的方向振动，或者沿不同的方向振动，在此不作限制。
在一个实施例中，扫描模块202包括第一光学元件214和与第一光学元件214连接的驱动器216，驱动器216用于驱动第一光学元件214绕转动轴209转动，使第一光学元件214改变准直光束219的方向。第一光学元件214将准直光束219投射至不同的方向。在一个实施例中，准直光束219经第一光学元件改变后的方向与转动轴209的夹角随着第一光学元件214的转动而变化。在一个实施例中，第一光学元件214包括相对的非平行的一对表面，准直光束219穿过该对表面。在一个实施例中，第一光学元件214包括厚度沿至少一个径向变化的棱镜。在一个实施例中，第一光学元件214包括楔角棱镜，对准直光束219进行折射。
在一个实施例中，扫描模块202还包括第二光学元件215，第二光学元件215绕转动轴209转动，第二光学元件215的转动速度与第一光学元件214的转动速度不同。第二光学元件215用于改变第一光学元件214投射的光束的方向。在一个实施例中，第二光学元件215与另一驱动器217连接，驱动器217驱动第二光学元件215转动。第一光学元件214和第二光学元件215可以由相同或不同的驱动器驱动，使第一光学元件214和第二光学元件215的转速和/或转向不同，从而将准直光束219投射至外界空间不同的方向，可以扫描较大的空间范围。在一个实施例中，控制器218控制驱动器216和217，分别驱动第一光学元件214和第二光学元件215。第一光学元件214和第二光学元件215的转速可以根据实际应用中预期扫描的区域和样式确定。驱动器216和217可以包括电机或其他驱 动器。
在一个实施例中，第二光学元件215包括相对的非平行的一对表面，光束穿过该对表面。在一个实施例中，第二光学元件215包括厚度沿至少一个径向变化的棱镜。在一个实施例中，第二光学元件215包括楔角棱镜。
一个实施例中，扫描模块202还包括第三光学元件(图未示)和用于驱动第三光学元件运动的驱动器。可选地，该第三光学元件包括相对的非平行的一对表面，光束穿过该对表面。在一个实施例中，第三光学元件包括厚度沿至少一个径向变化的棱镜。在一个实施例中，第三光学元件包括楔角棱镜。第一、第二和第三光学元件中的至少两个光学元件以不同的转速和/或转向转动。
在一个实施例中，所述扫描模块包括在所述光脉冲序列的出射光路上依次排布的2个或3个所述光折射元件。可选地，所述扫描模块中的至少2个所述光折射元件在扫描过程中旋转，以改变所述光脉冲序列的方向。
所述扫描模块在至少部分不同时刻的扫描路径不同，扫描模块202中的各光学元件旋转可以将光投射至不同的方向，例如投射的光211的方向和方向213，如此对测距装置200周围的空间进行扫描。当扫描模块202投射出的光211打到探测物201时，一部分光被探测物201沿与投射的光211相反的方向反射至测距装置200。探测物201反射的回光212经过扫描模块202后入射至准直元件204。
探测器205与发射器203放置于准直元件204的同一侧，探测器205用于将穿过准直元件204的至少部分回光转换为电信号。
一个实施例中，各光学元件上镀有增透膜。可选的，增透膜的厚度与发射器203发射出的光束的波长相等或接近，能够增加透射光束的强度。
一个实施例中，测距装置中位于光束传播路径上的一个元件表面上镀有滤光层，或者在光束传播路径上设置有滤光器，用于至少透射发射器所出射的光束所在波段，反射其他波段，以减少环境光给接收器带来的噪音。
在一些实施例中，发射器203可以包括激光二极管，通过激光二极管发射纳秒级别的激光脉冲，该激光二极管可以是具有前述的封装结构，进一步地，可以确定激光脉冲接收时间，例如，通过探测电信号脉冲的上升沿时间和/或下降沿时间确定激光脉冲接收时间。如此，测距装置200可以利用脉冲接收时间信息和脉冲发出时间信息计算TOF，从而确定探测物201到测距装置200的距离。测距装置200探测到的距离和方位可以用于遥感、避障、测绘、建模、导航等。
本申请还提供一种可移动平台，该可移动平台包括：可移动平台本体以及前文所述的 测距装置，该测距装置设置于所述可移动平台本体。可选地，可移动平台包括：飞行器、车辆、船或机器人等。
在一种实施方式中，本发明实施方式的测距装置可应用于可移动平台，测距装置可安装在可移动平台的平台本体。具有测距装置的可移动平台可对外部环境进行测量，例如，测量可移动平台与障碍物的距离用于避障等用途，和对外部环境进行二维或三维的测绘。在某些实施方式中，可移动平台包括飞行器、车辆、遥控车、机器人、船中的至少一种。当测距装置应用于飞行器时，平台本体为飞行器的机身。当测距装置应用于车辆时，平台本体为车辆的车身。该车辆可以是自动驾驶汽车或者半自动驾驶汽车，在此不做限制。当测距装置应用于遥控车时，平台本体为遥控车的车身。当测距装置应用于机器人时，平台本体为机器人。
由于本申请的测距装置以及可移动平台包括前述的封装结构，因此其具有和前述的封装结构相同的优点。
尽管这里已经参考附图描述了示例实施例，应理解上述示例实施例仅仅是示例性的，并且不意图将本申请的范围限制于此。本领域普通技术人员可以在其中进行各种改变和修改，而不偏离本申请的范围和精神。所有这些改变和修改意在被包括在所附权利要求所要求的本申请的范围之内。
应该注意的是上述实施例对本申请进行说明而不是对本申请进行限制，并且本领域技术人员在不脱离所附权利要求的范围的情况下可设计出替换实施例。在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。本申请可以借助于包括有若干不同元件的硬件以及借助于适当编程的计算机来实现。在列举了若干装置的单元权利要求中，这些装置中的若干个可以是通过同一个硬件项来具体体现。单词第一、第二、以及第三等的使用不表示任何顺序。可将这些单词解释为名称。

Claims (39)

  1. 一种二极管芯片的封装结构，其特征在于，包括：
    基板，包括第一表面和与所述第一表面相对的第二表面；
    二极管芯片，所述二极管芯片包括感光区域和位于所述感光区域外侧的非感光区域，所述感光区域为用于出射光的出光区或者为用于接收光的受光区，所述感光区域及所述非感光区域位于所述二极管芯片的第一侧，所述二极管芯片的第二侧设置于所述基板的第一表面，所述第二侧与所述第一侧相对；
    第一封装体，其至少覆盖所述二极管芯片的感光区域，所述第一封装体为透明绝缘材料；
    第二封装体，位于所述基板的第一表面，所述第二封装体与所述第一封装体的至少部分边缘抵接，所述第二封装体包括非透明绝缘材料。
  2. 如权利要求1所述的封装结构，其特征在于，所述第一封装体包覆整个所述二极管芯片以及位于整个所述二极管芯片外侧所述基板的部分所述第一表面，所述第二封装体包覆所述基板位于所述第一封装体外侧的第一表面。
  3. 如权利要求1所述的封装结构，其特征在于，所述第一封装体通过透明的粘接胶粘接于所述感光区域处。
  4. 如权利要求1至3任一项所述的封装结构，其特征在于，所述第一封装体面向所述第二封装体的侧壁与所述第二封装体面向所述第一封装体的侧壁相贴合。
  5. 如权利要求1至4任一项所述的封装结构，其特征在于，所述第二封装体包括非透明的树脂材料。
  6. 如权利要求1至5任一项所述的封装结构，其特征在于，所述第一封装体包括以下材料中的至少一种：玻璃、透明的树脂材料。
  7. 如权利要求1所述的封装结构，其特征在于，所述第一封装体为在所述第二封装体注塑成型之后注塑成型的，其中，所述第二封装体中形成有豁口，所述第一封装体填充所述豁口。
  8. 如权利要求1至7任一项所述的封装结构，其特征在于，所述基板包括第一导电布线和一个或多个第二导电布线，所述第二导电布线与所述第一导电布线彼此绝缘，当所述第二导电布线的数量为多个时，各个所述第二导电布线之间彼此绝缘，所述二极管芯片贴装于第一导电布线，所述二极管芯片包括一个或多个焊盘，各个焊盘分别连接一个所述第二导电布线。
  9. 如权利要求8所述的封装结构，其特征在于，所述二极管芯片包括一个或多个二极管，各个所述二极管分别对应一个所述焊盘。
  10. 如权利要求8所述的封装结构，其特征在于，当所述基板为导电框架，所述导电框架包括用作所述第一导电布线的第一框架部分和用作所述第二导电布线的一个或多个第二框架部分。
  11. 如权利要求10所述的封装结构，其特征在于，部分所述第二封装体还填充在所述第二框架部分和所述第一框架部分之间的间隙中，部分所述第二封装体还填充在相邻的所述第二框架部分之间的间隙中。
  12. 如权利要求8所述的封装结构，其特征在于，所述基板包括基底，所述第一导电布线和一个或多个所述第二导电布线铺设在所述基底的第一表面。
  13. 如权利要求8所述的封装结构，其特征在于，各个所述焊盘与其所对应的所述第二导电布线之间通过连接线电连接。
  14. 如权利要求8所述的封装结构，其特征在于，所述二极管芯片通过导电粘接层贴装于所述第一导电布线。
  15. 如权利要求1至14任一项所述的封装结构，其特征在于，所述封装结构还包括温度传感器，所述温度传感器设置于所述基板的第一表面，且位于所述二极管芯片的外侧，其中，所述第二封装体包覆所述温度传感器，或者，所述第一封装体包覆所述温度传感器；或者，第二封装体和所述第一封装体共同包覆所述温度传感器。
  16. 如权利要求1至15任一项所述的封装结构，其特征在于，所述二极管芯片为激光二极管芯片，则所述激光二极管芯片的所述感光区域为用于出射光的出光区，所述激光二极管芯片包括一个或多个垂直腔表面发射激光二极管。
  17. 如权利要求1至15任一项所述的封装结构，其特征在于，所述二极管芯片为雪崩二极管芯片，所述雪崩二极管芯片的所述感光区域为用于接收光的受光区。
  18. 一种二极管芯片的封装方法，其特征在于，所述方法包括：
    提供基板，所述基板包括第一表面和与所述第一表面相对的第二表面，
    在所述基板的第一表面用于设置二极管芯片区域的外围形成第二封装体，所述第二封装体具有开口，所述第二封装体包括非透明绝缘材料；
    提供包括感光区域和位于所述感光区域外侧的非感光区域的二极管芯片，所述感光区域及所述非感光区域位于所述二极管芯片的第一侧，并将所述二极管芯片的第二侧贴装于所述基板的第一表面，所述感光区域为用于出射光的出光区或者为用于接收光的受光区， 所述第二封装体的开口至少露出所述二极管芯片的所述感光区域，所述第二侧与所述第一侧相对；
    形成位于所述开口内并至少覆盖所述二极管芯片的感光区域的第一封装体，其中所述第二封装体与所述第一封装体的至少部分边缘抵接，所述第一封装体为透明绝缘材料。
  19. 一种二极管芯片的封装方法，其特征在于，所述方法包括：
    提供基板，所述基板包括第一表面和与所述第一表面相对的第二表面；
    提供包括感光区域和位于所述感光区域外侧的非感光区域的二极管芯片，所述感光区域及所述非感光区域位于所述二极管芯片的第一侧，并将所述二极管芯片的第二侧贴装于所述基板的第一表面，所述感光区域为用于出射光的出光区或者为用于接收光的受光区，所述第二侧与所述第一侧相对；
    形成至少覆盖所述二极管芯片的感光区域的第一封装体，其中所述第一封装体为透明绝缘材料；在所述基板的第一表面形成第二封装体，所述第二封装体与所述第一封装体的至少部分边缘抵接，所述第二封装体包括非透明绝缘材料。
  20. 如权利要求18或19所述的封装方法，其特征在于，所述第一封装体包覆整个所述二极管芯片以及位于整个所述二极管芯片外侧所述基板的部分所述第一表面，所述第二封装体包覆所述基板位于所述第一封装体外侧的第一表面。
  21. 如权利要求18或19所述的封装方法，其特征在于，所述形成至少覆盖所述二极管芯片的感光区域的第一封装体，包括：通过透明的粘接胶将所述第一封装体粘接于所述感光区域处。
  22. 如权利要求18至21任一项所述的封装方法，其特征在于，所述第一封装体面向所述第二封装体的侧壁与所述第二封装体面向所述第一封装体的侧壁相贴合。
  23. 如权利要求18至22任一项所述的封装方法，其特征在于，所述第二封装体包括非透明的树脂材料。
  24. 如权利要求18至23任一项所述的封装方法，其特征在于，所述第一封装体包括以下材料中的至少一种：玻璃、透明的树脂材料。
  25. 如权利要求18所述的封装方法，其特征在于，所述在所述基板用于设置二极管芯片区域的外围形成第二封装体，包括：
    通过注塑成型在所述基板用于设置二极管芯片区域的外围形成第二封装体；
    在所述第二封装体中形成至少一个豁口。
  26. 如权利要求25所述的封装方法，其特征在于，形成位于所述开口内并至少覆盖 所述二极管芯片的感光区域的第一封装体，包括：
    通过注塑成型形成位于所述开口内并至少覆盖所述二极管芯片的感光区域的第一封装体，其中，部分所述第一封装体还填充所述豁口。
  27. 如权利要求18至26任一项所述的封装方法，其特征在于，所述基板包括第一导电布线和一个或多个第二导电布线，所述第二导电布线与所述第一导电布线彼此绝缘，当所述第二导电布线的数量为多个时，各个所述第二导电布线之间彼此绝缘，所述二极管芯片贴装于第一导电布线，所述二极管芯片包括一个或多个焊盘，各个焊盘分别连接一个所述第二导电布线。
  28. 如权利要求27所述的封装方法，其特征在于，所述二极管芯片包括一个或多个二极管，各个所述二极管分别对应一个所述焊盘。
  29. 如权利要求27所述的封装方法，其特征在于，当所述基板为导电框架，所述导电框架包括用作所述第一导电布线的第一框架部分和用作所述第二导电布线的一个或多个第二框架部分。
  30. 如权利要求29所述的封装方法，其特征在于，部分所述第二封装体还填充在所述第二框架部分和所述第一框架部分之间的间隙中，部分所述第二封装体还填充在相邻的所述第二框架部分之间的间隙中。
  31. 如权利要求27所述的封装方法，其特征在于，所述基板包括基底，所述第一导电布线和一个或多个所述第二导电布线铺设在所述基底的第一表面。
  32. 如权利要求27所述的封装方法，其特征在于，各个所述焊盘与其所对应的所述第二导电布线之间通过连接线电连接。
  33. 如权利要求27所述的封装方法，其特征在于，所述二极管芯片通过导电粘接层贴装于所述第一导电布线。
  34. 如权利要求18至33任一项所述的封装方法，其特征在于，所述封装方法还包括：
    在形成所述第二封装体之前，提供温度传感器，并将所述温度传感器贴装于所述基板的第一表面，其中，所述温度传感器位于所述二极管芯片的外侧；
    在形成所述第二封装体时，所述第二封装体还覆盖所述温度传感器。
  35. 如权利要求18至34任一项所述的封装方法，其特征在于，所述二极管芯片为激光二极管芯片，则所述激光二极管芯片的所述感光区域为用于出射光的出光区，所述激光二极管芯片包括一个或多个垂直腔表面发射激光二极管。
  36. 如权利要求18至34任一项所述的封装方法，其特征在于，所述二极管芯片为雪 崩二极管芯片，所述雪崩二极管芯片的所述感光区域为用于接收光的受光区。
  37. 一种测距装置，其特征在于，所述测距装置包括如权利要求1至17任一项所述的二极管芯片的封装结构。
  38. 一种可移动平台，其特征在于，所述可移动平台包括：
    可移动平台本体；
    如权利要求37所述的测距装置，设置于所述可移动平台本体。
  39. 如权利要求38所述的可移动平台，其特征在于，所述可移动平台包括：飞行器、车辆、船或机器人。
PCT/CN2021/127053 2021-10-28 2021-10-28 二极管芯片的封装结构及方法、测距装置、可移动平台 WO2023070443A1 (zh)

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CN110648981A (zh) * 2019-09-11 2020-01-03 王之奇 一种影像传感芯片封装结构及其封装方法
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