WO2023065661A1 - 一种扩散炉 - Google Patents

一种扩散炉 Download PDF

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Publication number
WO2023065661A1
WO2023065661A1 PCT/CN2022/094517 CN2022094517W WO2023065661A1 WO 2023065661 A1 WO2023065661 A1 WO 2023065661A1 CN 2022094517 W CN2022094517 W CN 2022094517W WO 2023065661 A1 WO2023065661 A1 WO 2023065661A1
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Prior art keywords
furnace body
furnace
exhaust
pipe
air inlet
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PCT/CN2022/094517
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English (en)
French (fr)
Inventor
赵赞良
樊建江
韩晓辉
王武林
陈宇晖
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宁夏隆基乐叶科技有限公司
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Publication of WO2023065661A1 publication Critical patent/WO2023065661A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the technical field of diffusion furnaces, in particular to a diffusion furnace.
  • diffusion furnaces can dope semiconductor wafers under low pressure and high temperature conditions, thereby changing and controlling the type of impurities in the semiconductor and the concentration distribution inside and on the surface, thereby establishing regions with different electrical characteristics.
  • a diffusion furnace is usually used to prepare the PN junction of the solar cell.
  • Existing diffusion furnaces usually include: furnace door, furnace tube, inlet pipe and exhaust pipe.
  • the inlet pipe is usually a straight pipe structure, extending directly from the tail of the furnace tube to the furnace door, so that the process gas can flow from the furnace door. It is input into the furnace tube, and the exhaust pipe is arranged at the tail of the furnace tube, which can discharge the waste gas in the furnace body to the outside of the furnace tube.
  • the furnace door can be opened first, and then the silicon wafer is sent from the furnace door to the constant temperature zone in the furnace tube. The gas begins to diffuse, and the exhaust gas produced is exhausted outside the furnace tube using the exhaust pipe.
  • the process gas is easy to wash the furnace door, resulting in the formation of a large swirl area at the furnace door, and the inside of the furnace door is easy to adhere to the impurities in the process gas, which reduces the stability of the diffusion process. and uniformity.
  • shutting down to replace the furnace door will easily reduce production efficiency and production capacity.
  • the present application is proposed to provide a diffusion furnace that overcomes the above problems or at least partially solves the above problems.
  • a diffusion furnace which includes: a furnace body, a furnace door, an air inlet pipe and an exhaust pipe, the furnace body is provided with a feed inlet, and the furnace door is used to seal the inlet pipe.
  • the feed port, the exhaust pipe is set on the furnace body relative to the feed port;
  • the inlet pipe includes a straight pipe portion and an elbow portion, the elbow portion is arranged in the furnace body and is arranged close to the feed inlet, and the straight pipe portion includes a first air inlet and a first exhaust gas port, the elbow portion includes a second air inlet and a second exhaust port;
  • the first air inlet is arranged outside the furnace body, the first exhaust port communicates with the second air inlet, and the centerline of the second exhaust port is perpendicular to the center of the feed port Wire.
  • the outer wall of the lower surface of the curved pipe portion is an arc-shaped structure bent upward along the outer wall of the lower surface of the straight pipe portion;
  • the edge height of the second exhaust port is lower than the upper surface outer wall of the straight pipe portion.
  • the caliber of the curved pipe part is equal to the caliber of the straight pipe part.
  • the straight pipe portion is arranged at the bottom of the furnace body, and the second exhaust port is arranged toward the top of the furnace body.
  • the end of the furnace body away from the feed inlet is provided with a first through hole, and the straight pipe portion is passed through the first through hole.
  • one end of the furnace body close to the feed inlet is provided with a second through hole, and the straight pipe portion is passed through the second through hole.
  • the centerline of the straight pipe portion is perpendicular to the centerline of the second exhaust port.
  • the end of the furnace body away from the feed inlet is further provided with a third through hole, and the exhaust pipe is passed through the third through hole;
  • the exhaust pipe includes a third air inlet and a third exhaust port, the third air inlet is arranged in the furnace body, and the third exhaust port is arranged in the furnace body.
  • the multiple third air inlets are arranged on the side wall of the exhaust pipe.
  • the plurality of third air inlets are uniformly arranged along the circumference and the axial direction of the exhaust pipe respectively.
  • the process gas is input into the furnace body through the inlet pipe, and the process gas can pass through the furnace in sequence.
  • the first air inlet, the first air outlet, the second air inlet and the second air outlet enter the furnace body, since the center line of the second air outlet is perpendicular to the The central line of the feed inlet can prevent the process gas from directly washing the furnace door, reduce the swirl area formed at the furnace door, reduce the impurities attached to the inner side of the furnace door, and improve the stability and stability of the diffusion process. Uniformity, which in turn can reduce downtime to replace the furnace door, and improve production efficiency and capacity.
  • Fig. 1 is the structural representation of a kind of diffusion furnace of the present application
  • Fig. 2 is the structural representation of a kind of intake pipe of the present application
  • Fig. 3 is a partially enlarged schematic diagram of an air intake pipe of the present application.
  • Fig. 4 is a partial enlarged schematic view of another intake pipe of the present application.
  • Fig. 5 is a schematic structural diagram of an exhaust pipe of the present application.
  • 1-furnace body 11-feed inlet, 2-furnace door, 3-intake pipe, 31-straight pipe part, 311-first air inlet, 312-first exhaust port, 32-bend pipe part, 321 -the second air inlet, 322-the second air outlet, 4-exhaust pipe, 41-the third air inlet, 42-the third air outlet, 5-silicon chip, 6-quartz boat.
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.
  • One of the core concepts of the present application is to provide a diffusion furnace.
  • FIG. 1 it shows a schematic structural view of a diffusion furnace of the present application
  • Fig. 2 a schematic structural view of a gas inlet pipe of the present application is shown
  • Fig. 3 shows a kind of gas inlet pipe of the present application A partial enlargement of the .
  • the diffusion furnace can specifically include: a furnace body 1, a furnace door 2, an air intake pipe 3 and an exhaust pipe 4, the furnace body 1 is provided with a feed inlet 11, and the furnace door 2 is used to seal the feed Port 11, the exhaust pipe 4 is perforated on the furnace body 1 relative to the feed port 11; wherein, as shown in Figure 2, the inlet pipe 3 includes a straight pipe portion 31 and a curved pipe portion 32, and the curved pipe portion 32 is located on the furnace body 1, and close to the feed port 11, as shown in Figures 3 and 4, the straight pipe portion 31 includes a first air inlet 311 and a first exhaust port 312, and the curved pipe portion 32 includes a second air inlet 321 and a first air outlet 312.
  • the furnace door 2 can be used to seal the feed inlet 11, and then the process gas can be input into the furnace body 1 through the inlet pipe 3, and the process gas can pass through the first inlet in turn. 311, the first exhaust port 312, the second air inlet 321 and the second exhaust port 322 enter the body of furnace 1 afterwards, because the center line of the second exhaust port 322 is perpendicular to the center line of the feed port 11, it can Avoid the process gas from directly flushing the furnace door 2, reduce the swirl area formed at the furnace door 2, reduce the impurities attached to the inner side of the furnace door 2, improve the stability and uniformity of the diffusion process, and thus reduce the shutdown and replacement of the furnace door 2 operations, increasing productivity and productivity.
  • the diffusion furnace in the embodiment of this application is one of the important process equipment in the pre-process of the semiconductor production line, and is used for diffusion, oxidation, Annealing, alloying and sintering processes.
  • the diffusion furnace to prepare the PN junction of a solar cell is used as an example for illustration and explanation, and reference can be made to other settings.
  • the furnace body 1 may be provided with a feed inlet 11 , and in practical applications, the furnace door 2 may be used to seal the feed inlet 11 to ensure the tightness of the furnace body 1 during the diffusion process.
  • the exhaust pipe 4 in the embodiment of the present application is used to discharge the gas in the furnace body 1 out of the furnace body 1.
  • the exhaust pipe 4 can be a long circular pipe, a square pipe or an irregularly shaped pipe. Due to the design difficulty and design cost of the air pipe 4, the exhaust pipe 4 can be designed as a circular pipe.
  • the wall thickness, caliber, length and other dimensions of the exhaust pipe 4 can be set according to actual needs, which is not specifically limited in this embodiment of the present application.
  • the exhaust pipe 4 can be connected with a pump, so that the waste gas generated in the furnace body 1 can be pumped out of the furnace body 1 through the pump.
  • annealing can be performed to relieve stress and reduce scratches on the exhaust pipe 4 , so as to improve the structural stability of the exhaust pipe 4 .
  • the intake pipe 3 in the embodiment of the present application can be composed of a straight pipe portion 31 and an elbow portion 32, and the straight pipe portion 31 and the elbow portion 32 can be integrally formed, or the straight pipe portion 31 and the elbow portion 32 can also be
  • the two independent structures are connected into an integrated structure through welding, bonding, etc., which is not specifically limited in the embodiment of the present application, and can be set according to actual needs.
  • annealing can be performed to relieve stress and reduce scratches on the intake pipe 3 , so as to improve the structural stability of the intake pipe 3 .
  • the preparation process of the PN junction of solar cells can specifically include: opening the furnace door 2, the silicon carbide paddle can send the quartz boat 6 filled with silicon wafers 5 into the constant temperature zone in the furnace body 1; The slurry drops to the lower limit, exits the silicon carbide slurry, and closes the furnace door 2; uses a vacuum pump to vacuumize the furnace body 1; uses a heater to heat up, and enters the process gas into the furnace body 1 through the intake pipe 3 , under low pressure and hot environment, elements such as phosphorus and boron can be diffused to the surface and inside of the silicon wafer 5 to prepare and form a PN junction of the solar cell.
  • the process gas can enter the furnace body 1 after passing through the first air inlet 311, the first exhaust port 312, the second air inlet 321 and the second exhaust port 322 in sequence.
  • the opening 322 can face the top of the furnace body 1, which can prevent the process gas from blowing directly to the silicon wafer 5, and can also improve the uniformity of the diffusion resistance at the feeding port 11, and improve the uniformity of the PN junction and the efficiency of the solar cell.
  • the outer wall of the lower surface of the curved pipe portion 32 may be an arc-shaped structure bent upwards along the outer wall of the lower surface of the straight pipe portion 31; .
  • the outer wall of the lower surface of the curved pipe portion 32 is an arc-shaped structure.
  • the arc structure eliminates the corners at the elbow portion 32, and the upper opening of the elbow portion 32 (that is, the second exhaust port 322), the outer edge of the aperture does not protrude from the upper surface outer wall of the straight pipe portion 31 , can ensure the smooth installation of the intake pipe 3 .
  • the upper surface outer wall of the straight pipe part 31 and the lower surface outer wall of the straight pipe part 31 are relatively arranged, and the direction from the lower surface of the straight pipe part 31 to the upper surface of the straight pipe part 31 can be as shown in Figure 3 in the direction of the arrow shown in .
  • the straight pipe portion 31 can be a long circular pipe, a square pipe or an irregularly shaped pipe.
  • the straight pipe portion 31 can be designed as a circular pipe.
  • the curved pipe portion 32 can be obtained by bending the straight pipe portion 31, and the specific structure of the curved pipe portion 32 can be adaptively adjusted according to the structure of the straight pipe portion 31, which is not made in the embodiment of the present application. Specific limits.
  • the caliber of the bent pipe portion 32 may be equal to the caliber of the straight pipe portion 31 .
  • the caliber of the curved pipe portion 32 is equal to the caliber of the straight pipe portion 31 , which can reduce the design difficulty of the intake pipe 3 .
  • the sizes of the first air inlet 311 , the first air outlet 312 , the second air inlet 321 and the second air outlet 322 are consistent.
  • the caliber of the curved pipe portion 32 is equal to the caliber of the straight pipe portion 31, so that the caliber at each position of the air intake pipe 3 is relatively uniform.
  • the inner diameter of the air intake pipe 3 can be 10-20mm. mm, and the wall thickness can be 2-4 mm, which can be set according to actual needs.
  • the straight pipe portion 31 may be disposed at the bottom of the furnace body 1 , and the second exhaust port 322 may be disposed toward the top of the furnace body 1 .
  • the second exhaust port 322 can face the top of the furnace body 1, since the straight pipe portion 31 is arranged at the bottom of the furnace body 1, the distance between the second exhaust port 322 and the top wall of the furnace body 1 can be increased. In this way, the process gas can be prevented from directly scouring the top wall of the furnace body 1, and the service life of the furnace body 1 can be improved.
  • the end of the furnace body 1 away from the feed inlet 11 may be provided with a first through hole, and the straight pipe portion 31 may be passed through the first through hole.
  • the straight pipe part 31 is pierced through the first piercing hole. Since the first piercing hole is set away from the feed inlet 11, the first air inlet 311 of the straight pipe part 31 can be far away from the feed inlet. One end of the port 11 protrudes out of the furnace body 1 , so that the straight pipe part 31 can input the process gas through the first gas inlet 311 .
  • the first air inlet 311 may be respectively connected to a plurality of air inlet channels, each air inlet channel is correspondingly provided with an independent air inlet valve, and different process gases may be input through different air inlet channels.
  • the end of the furnace body 1 close to the feed inlet 11 may be provided with a second through hole, and the straight pipe portion 31 may be passed through the second through hole.
  • the straight pipe part 31 is pierced through the second piercing hole. Since the second piercing hole is located close to the feed port 11, the straight pipe part 31 can extend into the furnace from the end close to the feed port 11.
  • the inside of the body 1 communicates with the bent pipe part 32, which can reduce the design size of the straight pipe part 31 and reduce the design cost of the diffusion furnace.
  • the centerline of the straight pipe portion 31 may be perpendicular to the centerline of the second exhaust port 322 .
  • the centerline of the straight pipe portion 31 is perpendicular to the centerline of the second exhaust port 322, so that the curved pipe portion 32 can be bent 90° along the straight pipe portion 31, which can reduce the design difficulty of the intake pipe 3 , and facilitate the installation and cooperation of the intake pipe 3 and the furnace body 1.
  • the end of the furnace body 1 far away from the feed port 11 may also be provided with a third through hole, and the exhaust pipe 4 may be passed through the third through hole; the exhaust pipe 4 may include a third air inlet 41 And the third exhaust port 42, the third air inlet 41 is arranged in the furnace body 1, and the third exhaust port 42 is arranged outside the furnace body 1.
  • the gas in the furnace body 1 can enter the exhaust pipe 4 from the third air inlet 41, then exit the exhaust pipe 4 from the third exhaust port 42, and be discharged outside the furnace body 1, which can be timely
  • the waste gas in the furnace body 1 is treated to improve the stability of the diffusion process.
  • third air inlets 41 there may be multiple third air inlets 41 , and multiple third air inlets 41 may be provided on the side wall of the exhaust pipe 4 .
  • multiple third air inlets 41 are arranged on the side wall of the exhaust pipe 4, so that the gas can enter the exhaust pipe 4 from multiple positions in the furnace body 1, and then enter the exhaust pipe 4 from the third
  • the exhaust port 42 exhausts the exhaust pipe 4 and discharges to the outside of the furnace body 1, which can reduce the air flow disturbance in the furnace body 1, avoid air flow disturbance, and improve the uniformity of diffusion resistance at the rear of the furnace body 1.
  • the exhaust pipe 4 can be arranged at the tail of the furnace body 1 .
  • the exhaust pipe 4 can also include a relative top wall and a bottom wall.
  • the top wall of the exhaust pipe 4 When the top wall of the exhaust pipe 4 is arranged in the furnace body 1, the top wall can be blocked, and a second wall can be opened on the bottom wall.
  • a plurality of third air inlets 41 may be uniformly arranged along the circumferential direction and the axial direction of the exhaust pipe 4 respectively.
  • a plurality of third air inlets 41 are uniformly arranged along the circumferential direction and the axial direction of the exhaust pipe 4 respectively, which can further reduce air flow disturbance and improve the uniformity of diffusion resistance at the rear of the furnace body 1 .
  • 16 third air inlets 41 can be arranged in each circle, and the angle between two adjacent third air inlets 41 can be 22.5°.
  • 10 third air inlets 41 can be arranged in one circle, and the angle between two adjacent third air inlets 41 can be 36°, or 20 third air inlets 41 can be arranged in one circle, and the adjacent The angle between the two third air inlets 41 can be 18°, which can be set according to actual needs, which is not specifically limited in this embodiment of the present application.
  • the distance between every two adjacent third air inlets 41 can be the same, and the specific size can be set according to actual needs, which is not specifically limited in this embodiment of the present application.
  • the diameter of the third air inlet 41 can be 2 mm, 2.8 mm or 3 mm, etc., which can be set according to actual needs, and the specific number of the third air inlet 41 can also be set according to actual needs.
  • the embodiment does not specifically limit this.
  • the furnace body 1, the furnace door 2, the intake pipe 3 and the exhaust pipe 4 can all be quartz structural parts.
  • the furnace body 1, the furnace door 2, the intake pipe 3 and the exhaust pipe 4 are all set as quartz structural parts, which can avoid the introduction of impurities during the diffusion process and improve the quality of the PN junction of the solar cell.
  • the process gas is input into the furnace body through the inlet pipe, and the process gas can pass through the furnace in sequence.
  • the first air inlet, the first air outlet, the second air inlet and the second air outlet enter the furnace body, since the center line of the second air outlet is perpendicular to the The central line of the feed inlet can prevent the process gas from directly washing the furnace door, reduce the swirl area formed at the furnace door, reduce the impurities attached to the inner side of the furnace door, and improve the stability and stability of the diffusion process. Uniformity, which in turn can reduce downtime to replace the furnace door, and improve production efficiency and capacity.
  • any reference signs placed between parentheses shall not be construed as limiting the claim.
  • the word “comprising” does not exclude the presence of elements or steps not listed in a claim.
  • the word “a” or “an” preceding an element does not exclude the presence of a plurality of such elements.
  • the application can be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer.
  • the use of the words first, second, and third, etc. does not indicate any order. These words can be interpreted as names.

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Abstract

一种扩散炉，包括：炉体、炉门、进气管和排气管，炉体上设有进料口，炉门用于密封进料口，排气管相对进料口穿设在炉体上；其中，进气管包括直管部和弯管部，弯管部设于炉体内，且靠近进料口设置，直管部包括第一进气口和第一排气口，弯管部包括第二进气口和第二排气口；第一进气口设于炉体外，第一排气口与第二进气口连通，第二排气口的中心线垂直于进料口的中心线。可以避免工艺气体直接冲刷炉门，减少炉门内侧附着的杂质，提高扩散过程的稳定性和均匀性，减少停机更换炉门的操作，提高生产效率和产能。

Description

一种扩散炉
本申请要求在2021年10月19日提交中国专利局、申请号为202122517791.3、申请名称为“一种扩散炉”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及扩散炉技术领域，特别是涉及一种扩散炉。
背景技术
目前，扩散炉可以在低压、高温的条件下对半导体晶圆进行掺杂，从而改变和控制半导体内杂质的类型和内部及表面的浓度分布，从而建立特性不同的电特性区域。例如：在晶体硅太阳能电池行业中，通常使用扩散炉制备太阳能电池的PN结。
现有的扩散炉通常包括：炉门、炉管、进气管和排气管，进气管通常为直管结构，从炉管尾部直接伸入至炉门位置，使得工艺气体可以从炉门位置处输入炉管内，排气管设置在炉管尾部，可以将炉体内的废气排出炉管外。以制备太阳能电池的PN结为例，可以先打开炉门，然后将硅片从炉门送入到炉管内的恒温区，关闭炉门，再进行加热处理，从进气管向炉管内通入工艺气体开始扩散，使用排气管将产生的废气排出炉管外部。
然而，在使用进气管通入工艺气体的过程中，工艺气体容易冲刷炉门，导致炉门处形成较大的旋流区，炉门内侧容易附着工艺气体中的杂质，降低了扩散过程的稳定性和均匀性。而且停机更换炉门，又容易降低生产效率和产能。
申请内容
鉴于上述问题，提出了本申请以便提供一种克服上述问题或者至少部分地解决上述问题的一种扩散炉。
为了解决上述问题，本申请公开了一种扩散炉，包括：炉体、炉门、进气管和排气管，所述炉体上设有进料口，所述炉门用于密封所述进料口，所述排气管相对所述进料口穿设在所述炉体上；其中，
所述进气管包括直管部和弯管部，所述弯管部设于所述炉体内，且靠近所述进料口设置，所述直管部包括第一进气口和第一排气口，所述弯管部包 括第二进气口和第二排气口；
所述第一进气口设于所述炉体外，所述第一排气口与所述第二进气口连通，所述第二排气口的中心线垂直于所述进料口的中心线。
可选地，所述弯管部的下表面外壁为沿所述直管部的下表面外壁向上弯曲的弧形结构；
所述第二排气口的边缘高度低于所述直管部的上表面外壁。
可选地，所述弯管部的口径等于所述直管部的口径。
可选地，所述直管部设于所述炉体的底部，所述第二排气口朝向所述炉体的顶部设置。
可选地，所述炉体远离所述进料口的一端设有第一穿设孔，所述直管部穿设于所述第一穿设孔。
可选地，所述炉体靠近所述进料口的一端设有第二穿设孔，所述直管部穿设于所述第二穿设孔。
可选地，所述直管部的中心线垂直于所述第二排气口的中心线。
可选地，所述炉体远离所述进料口的一端还设有第三穿设孔，所述排气管穿设于所述第三穿设孔；
所述排气管包括第三进气口和第三排气口，所述第三进气口设于所述炉体内，所述第三排气口设于所述炉体外。
可选地，所述第三进气口的数量为多个，所述多个第三进气口设置在所述排气管的侧壁上。
可选地，所述多个第三进气口分别沿所述排气管的周向和轴向均匀设置。
本申请包括以下优点：
在本申请实施例中，在进行扩散工艺的过程中，可以使用所述炉门密封所述进料口之后，通过所述进气管向所述炉体内输入工艺气体，工艺气体可以依次经过所述第一进气口、所述第一排气口、所述第二进气口和所述第二排气口之后进入所述炉体内，由于所述第二排气口的中心线垂直于所述进料口的中心线，可以避免工艺气体直接冲刷所述炉门，减小在所述炉门处形成的旋流区，减少所述炉门内侧附着的杂质，提高扩散过程的稳定性和均匀性，进而可以减少停机更换炉门的操作，提高生产效率和产能。
上述说明仅是本申请技术方案的概述，为了能够更清楚了解本申请的技术手段，而可依照说明书的内容予以实施，并且为了让本申请的上述和其它 目的、特征和优点能够更明显易懂，以下特举本申请的具体实施方式。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请的一种扩散炉的结构示意图；
图2是本申请的一种进气管的结构示意图；
图3是本申请的一种进气管的局部放大示意图；
图4是本申请的另一种进气管的局部放大示意图；
图5是本申请的一种排气管的结构示意图。
附图标记：
1-炉体，11-进料口，2-炉门，3-进气管，31-直管部，311-第一进气口，312-第一排气口，32-弯管部，321-第二进气口，322-第二排气口，4-排气管，41-第三进气口，42-第三排气口，5-硅片，6-石英舟。
具体实施例
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
本申请的说明书和权利要求书中的术语“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。此外，说明书以及权利要求中“和/或”表示所连接对象的至少其中之一，字符“/”，一般表示前后关联对象是一种“或”的关系。
在本发明的描述中，需要理解的是，术语“长度”、“宽度”、“厚度”、“上”、“下”、“顶”、“底”“内”、“外”、“轴向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅 是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
本申请的核心构思之一在于提供一种扩散炉。
参照图1，示出了本申请的一种扩散炉的结构示意图，参照图2，示出了本申请的一种进气管的结构示意图，参照图3，示出了本申请的一种进气管的局部放大图。如图1所示，所述扩散炉具体可以包括：炉体1、炉门2、进气管3和排气管4，炉体1上设有进料口11，炉门2用于密封进料口11，排气管4相对进料口11穿设在炉体1上；其中，如图2所示，进气管3包括直管部31和弯管部32，弯管部32设于炉体1内，且靠近进料口11设置，如图3和4所示，直管部31包括第一进气口311和第一排气口312，弯管部32包括第二进气口321和第二排气口322；第一进气口311设于炉体1外，第一排气口312与第二进气口321连通，第二排气口322的中心线垂直于进料口11的中心线。
在本申请实施例中，在进行扩散工艺的过程中，可以使用炉门2密封进料口11之后，通过进气管3向炉体1内输入工艺气体，工艺气体可以依次经过第一进气口311、第一排气口312、第二进气口321和第二排气口322之后进入炉体1内，由于第二排气口322的中心线垂直于进料口11的中心线，可以避免工艺气体直接冲刷炉门2，减小在炉门2处形成的旋流区，减少炉门2内侧附着的杂质，提高扩散过程的稳定性和均匀性，进而可以减少停机更换炉门2的操作，提高生产效率和产能。
需要说明的是，本申请实施例中的扩散炉是半导体生产线前工序的重要工艺设备之一，用于大规模集成电路、分立器件、电力电子、光电器件和光导纤维等行业的扩散、氧化、退火、合金及烧结等工艺。在本申请实 施例中，仅以使用所述扩散炉制备太阳能电池的PN结为例进行说明解释，其他情况可参考设置。
具体地，炉体1上可以设有进料口11，在实际应用中，炉门2可以用于密封进料口11，以保证炉体1在扩散工艺过程中的密封性。
本申请实施例中的排气管4用于将炉体1内的气体排出炉体1外，排气管4可以为长条形的圆形管、方形管或者不规则形状管，为了降低排气管4的设计难度和设计成本，可以选择将排气管4设计为圆形管。
进一步地，排气管4的壁厚、口径、长度等尺寸大小可根据实际需求进行设置，本申请实施例对此不作具体限定。
在实际应用中，排气管4可以与泵连接，以通过泵将炉体1内产生的废气泵出炉体1外。
具体地，在制作排气管4时，可以进行退火去应力，减少排气管4上的划痕，以提高排气管4的结构稳定性。
本申请实施例中的进气管3可以由直管部31和弯管部32组成，直管部31和弯管部32可以为一体成型结构，或者直管部31和弯管部32也可以为两个独立的结构，通过焊接、粘接等方式连接成一体式结构，本申请实施例对此不作具体限定，具体可根据实际需求进行设置。
具体地，在制作进气管3时，可以进行退火去应力，减少进气管3上的划痕，以提高进气管3的结构稳定性。
如图1所示，太阳能电池的PN结的制备过程具体可以包括：打开炉门2，碳化硅桨可以将插满硅片5的石英舟6送入炉体1内的恒温区；然后将碳化浆下降至下限位处，并退出碳化硅浆，关闭炉门2；使用真空泵对炉体1内进行抽真空处理；使用加热器进行加热升温，并通过进气管3向炉体1内输入工艺气体，在低压、热环境下，可以将磷、硼等元素扩散至硅片5表面及内部，制备形成太阳能电池的PN结。
在上述扩散过程中，工艺气体可以依次经过第一进气口311、第一排气口312、第二进气口321和第二排气口322之后进入炉体1内，由于第二排气口322的可以朝向炉体1的顶部，可以避免工艺气体直接吹向硅片5，还可以改善进料口11处的扩散方阻均匀性，提高PN结的均匀性以及太阳能电池的效率。
可选地，弯管部32的下表面外壁可以为沿直管部31的下表面外壁向上弯曲的弧形结构；第二排气口322的边缘高度可以低于直管部31的上表面外壁。在本申请实施例中，弯管部32的下表面外壁为弧形结构，具体的，如图3所示，弯管部32的下表面外壁是沿直管部31的下表面外壁向上弯曲的弧形结构，在此消除弯管部32处的棱角，并且弯管部32的上部开孔(也就是第二排气口322)，其孔径外边缘不凸出直管部31的上表面外壁，可以保证进气管3的顺利安装。
具体地，如图3所示，直管部31的上表面外壁和直管部31的下表面外壁相对设置，直管部31的下表面至直管部31的上表面的方向可以为图3中所示的箭头方向。
具体地，直管部31可以为长条形的圆形管、方形管或者不规则形状管，为了降低进气管3的设计成本，可以选择将直管部31设计为圆形管。
进一步地，弯管部32可以在直管部31的基础上进行折弯处理得到的，弯管部32的具体结构可根据直管部31的结构进行适应性调整，本申请实施例对此不作具体限定。
可选地，弯管部32的口径可以等于直管部31的口径。在本申请实施例中，弯管部32的口径等于直管部31的口径，可以降低进气管3的设计难度。
具体地，第一进气口311、第一排气口312、第二进气口321和第二排气口322的尺寸一致。
具体地，弯管部32的口径等于直管部31的口径，使得进气管3各个位置处的口径较为统一，以进气管3为圆形管为例，进气管3的内径可以为10-20毫米，壁厚可以为2-4毫米，具体可根据实际需求进行设置。
可选地，直管部31可以设于炉体1的底部，第二排气口322可以朝向炉体1的顶部设置。
在本申请实施例中，第二排气口322可以朝向炉体1的顶部，由于直管部31设置在炉体1的底部，可以增大第二排气口322与炉体1顶壁之间的间距，这样，可以避免工艺气体直接冲刷炉体1的顶壁，提高炉体1的使用寿命。
可选地，炉体1远离进料口11的一端可以设有第一穿设孔，直管部31 可以穿设于第一穿设孔。
在本申请实施例中，直管部31穿设于第一穿设孔，由于第一穿设孔远离进料口11设置，使得直管部31的第一进气口311可以从远离进料口11的一端伸出炉体1外，便于直管部31通过第一进气口311输入工艺气体。
具体地，第一进气口311可以分别与多个进气通道连接，每个进气通道内对应设有独立的进气阀，可以通过不同的进气通道输入不同的工艺气体。
可选地，炉体1靠近进料口11的一端可以设有第二穿设孔，直管部31可以穿设于第二穿设孔。
在本申请实施例中，直管部31穿设于第二穿设孔，由于第二穿设孔靠近进料口11设置，使得直管部31可以从靠近进料口11的一端伸入炉体1内与弯管部32连通，可以减小直管部31的设计尺寸，降低所述扩散炉的设计成本。
可选地，直管部31的中心线可以垂直于第二排气口322的中心线。
在本申请实施例中，直管部31的中心线垂直于第二排气口322的中心线，使得弯管部32可以沿直管部31弯折90°，可以降低进气管3的设计难度，而且便于进气管3和炉体1的安装配合。
可选地，炉体1远离进料口11的一端还可以设有第三穿设孔，排气管4可以穿设于第三穿设孔；排气管4可以包括第三进气口41和第三排气口42，第三进气口41设于炉体1内，第三排气口42设于炉体1外。
在本申请实施例中，炉体1内的气体可以从第三进气口41进入排气管4，然后从第三排气口42排出排气管4，并排至炉体1外，可以及时处理炉体1内的废气，提高扩散过程的稳定性。
具体地，通过第二进气口321向炉体1内通气，通过排气管4对将炉体1内的气体排出，由于第二进气口321靠近进料口11设置，排气管4远离进料口11设置，可以避免通气操作和排气操作彼此造成干扰，减少炉体1内的气流扰动。
可选地，第三进气口41的数量可以为多个，多个第三进气口41可以设置在排气管4的侧壁上。
在本申请实施例中，多个第三进气口41设置在排气管4的侧壁上，使 得气体可以从炉体1内的多个位置处进入排气管4，然后再从第三排气口42排出排气管4，排至炉体1外，可以减少炉体1内的气流扰动，避免气流紊乱，改善炉体1尾部的扩散方阻均匀性。
具体地，排气管4可以设置在炉体1的尾部。
具体地，排气管4还可以包括相对的顶壁和底壁，在将排气管4的顶壁设于炉体1内的情况下，可以将顶壁封堵，在底壁上开设第三排气口42；在将排气管4的底壁设于炉体1内的情况下，可以将底壁封堵，在顶壁上开设第三排气口42。
可选地，多个第三进气口41可以分别沿排气管4的周向和轴向均匀设置。
在本使用新型实施例中，将多个第三进气口41分别沿排气管4的周向和轴向均匀设置，可以进一步降低气流扰动，改善炉体1尾部的扩散方阻均匀性。
如图5所示，沿排气管4的周向，每圈可以设置16个第三进气口41，相邻两个第三进气口41之间的角度可以为22.5°，在实际应用中，一圈可以设置10个第三进气口41，相邻两个第三进气口41之间的角度可以为36°，或者一圈可以设置20个第三进气口41，相邻的两个第三进气口41之间的角度可以为18°，具体可根据实际需求进行设置，本申请实施例对此不作具体限定。
具体地，沿排气管4的周向，每相邻的两个第三进气口41之间的间距可以相同，具体尺寸可根据实际需求进行设置，本申请实施例对此不作具体限定。
具体地，第三进气口41的口径可以为2毫米、2.8毫米或者3毫米等，具体可根据实际需求进行设置，第三进气口41的具体数量也可以根据实际需求进行设置，本申请实施例对此不作具体限定。
可选地，炉体1、炉门2、进气管3和排气管4均可以为石英结构件。在实际应用中，将炉体1、炉门2、进气管3和排气管4均设置为石英结构件，可以避免在扩散过程中引入杂质，提高太阳能电池的PN结的质量。
本申请实施例所述的扩散炉至少包括以下优点：
在本申请实施例中，在进行扩散工艺的过程中，可以使用所述炉门密 封所述进料口之后，通过所述进气管向所述炉体内输入工艺气体，工艺气体可以依次经过所述第一进气口、所述第一排气口、所述第二进气口和所述第二排气口之后进入所述炉体内，由于所述第二排气口的中心线垂直于所述进料口的中心线，可以避免工艺气体直接冲刷所述炉门，减小在所述炉门处形成的旋流区，减少所述炉门内侧附着的杂质，提高扩散过程的稳定性和均匀性，进而可以减少停机更换炉门的操作，提高生产效率和产能。
本文中所称的“一个实施例”、“实施例”或者“一个或者多个实施例”意味着，结合实施例描述的特定特征、结构或者特性包括在本申请的至少一个实施例中。此外，请注意，这里“在一个实施例中”的词语例子不一定全指同一个实施例。
在此处所提供的说明书中，说明了大量具体细节。然而，能够理解，本申请的实施例可以在没有这些具体细节的情况下被实践。在一些实例中，并未详细示出公知的方法、结构和技术，以便不模糊对本说明书的理解。
在权利要求中，不应将位于括号之间的任何参考符号构造成对权利要求的限制。单词“包含”不排除存在未列在权利要求中的元件或步骤。位于元件之前的单词“一”或“一个”不排除存在多个这样的元件。本申请可以借助于包括有若干不同元件的硬件以及借助于适当编程的计算机来实现。单词第一、第二、以及第三等的使用不表示任何顺序。可将这些单词解释为名称。
最后应说明的是：以上实施例仅用以说明本申请的技术方案，而非对其限制；尽管参照前述实施例对本申请进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。

Claims (10)

  1. 一种扩散炉，其特征在于，包括：炉体、炉门、进气管和排气管，所述炉体上设有进料口，所述炉门用于密封所述进料口，所述排气管相对所述进料口穿设在所述炉体上；其中，
    所述进气管包括直管部和弯管部，所述弯管部设于所述炉体内，且靠近所述进料口设置，所述直管部包括第一进气口和第一排气口，所述弯管部包括第二进气口和第二排气口；
    所述第一进气口设于所述炉体外，所述第一排气口与所述第二进气口连通，所述第二排气口的中心线垂直于所述进料口的中心线。
  2. 根据权利要求1所述的扩散炉，其特征在于，所述弯管部的下表面外壁为沿所述直管部的下表面外壁向上弯曲的弧形结构；
    所述第二排气口的边缘高度低于所述直管部的上表面外壁。
  3. 根据权利要求1所述的扩散炉，其特征在于，所述弯管部的口径等于所述直管部的口径。
  4. 根据权利要求1所述的扩散炉，其特征在于，所述直管部设于所述炉体的底部，所述第二排气口朝向所述炉体的顶部设置。
  5. 根据权利要求1所述的扩散炉，其特征在于，所述炉体远离所述进料口的一端设有第一穿设孔，所述直管部穿设于所述第一穿设孔。
  6. 根据权利要求1所述的扩散炉，其特征在于，所述炉体靠近所述进料口的一端设有第二穿设孔，所述直管部穿设于所述第二穿设孔。
  7. 根据权利要求1所述的扩散炉，其特征在于，所述直管部的中心线垂直于所述第二排气口的中心线。
  8. 根据权利要求1所述的扩散炉，其特征在于，所述炉体远离所述进料口的一端还设有第三穿设孔，所述排气管穿设于所述第三穿设孔；
    所述排气管包括第三进气口和第三排气口，所述第三进气口设于所述炉体内，所述第三排气口设于所述炉体外。
  9. 根据权利要求8所述的扩散炉，其特征在于，所述第三进气口的数量为多个，所述多个第三进气口设置在所述排气管的侧壁上。
  10. 根据权利要求9所述的扩散炉，其特征在于，所述多个第三进气口分别沿所述排气管的周向和轴向均匀设置。
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JP2001185501A (ja) * 1999-12-22 2001-07-06 Mitsubishi Electric Corp 半導体素子の製造プロセス用横型拡散炉
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CN207016893U (zh) * 2017-04-25 2018-02-16 苏州同冠微电子有限公司 一种炉管组件及其扩散炉
CN212800603U (zh) * 2020-08-21 2021-03-26 通威太阳能（合肥）有限公司 一种进气管及扩散炉
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JP2001185501A (ja) * 1999-12-22 2001-07-06 Mitsubishi Electric Corp 半導体素子の製造プロセス用横型拡散炉
CN105070783A (zh) * 2015-07-16 2015-11-18 奥特斯维能源（太仓）有限公司 一种用于高温扩散炉的喷淋管及其应用
CN207016893U (zh) * 2017-04-25 2018-02-16 苏州同冠微电子有限公司 一种炉管组件及其扩散炉
CN212800603U (zh) * 2020-08-21 2021-03-26 通威太阳能（合肥）有限公司 一种进气管及扩散炉
CN216338074U (zh) * 2021-10-19 2022-04-19 宁夏隆基乐叶科技有限公司 一种扩散炉

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