WO2023061361A1 - 检测装置及目标检测修复系统 - Google Patents

检测装置及目标检测修复系统 Download PDF

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Publication number
WO2023061361A1
WO2023061361A1 PCT/CN2022/124617 CN2022124617W WO2023061361A1 WO 2023061361 A1 WO2023061361 A1 WO 2023061361A1 CN 2022124617 W CN2022124617 W CN 2022124617W WO 2023061361 A1 WO2023061361 A1 WO 2023061361A1
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WIPO (PCT)
Prior art keywords
nth
insulating layer
signal
region
film
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PCT/CN2022/124617
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English (en)
French (fr)
Inventor
吕建先
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宁德时代新能源科技股份有限公司
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Priority to EP22880298.9A priority Critical patent/EP4390386A1/en
Publication of WO2023061361A1 publication Critical patent/WO2023061361A1/zh
Priority to US18/605,790 priority patent/US20240219444A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/72—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables
    • G01N27/82—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables for investigating the presence of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/102—Primary casings; Jackets or wrappings characterised by their shape or physical structure
    • H01M50/103—Primary casings; Jackets or wrappings characterised by their shape or physical structure prismatic or rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/116—Primary casings; Jackets or wrappings characterised by the material
    • H01M50/117—Inorganic material
    • H01M50/119—Metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/116—Primary casings; Jackets or wrappings characterised by the material
    • H01M50/124—Primary casings; Jackets or wrappings characterised by the material having a layered structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/131—Primary casings; Jackets or wrappings characterised by physical properties, e.g. gas permeability, size or heat resistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Definitions

  • the present application relates to the technical field of detection, in particular to a detection device and a target detection and repair system.
  • One of the objectives of the embodiments of the present application is to provide a detection device and a target detection and repair system, which can at least simplify the detection of tiny defects on the insulating layer and more accurately locate the position of the defect on the insulating layer.
  • a detection device comprising:
  • the conductive film has N film regions, and any two film regions are insulated from each other, and the conductive film is used to bond with the insulating layer of the target;
  • the target includes a metal layer, and the insulating layer covers the metal layer;
  • a signal generator configured to transmit a first electromagnetic signal to the conductive film
  • the signal receiver includes N acquisition units, the nth film area corresponds to the nth acquisition unit, and the signal receiver is used to obtain the nth acquisition signal from the second electromagnetic signal generated after the first electromagnetic signal passes through the action of the conductive film, insulating layer and metal layer ;
  • n is a positive integer less than or equal to N;
  • the collected signal is used to determine whether the region of the insulating layer covered by the nth film region has a predetermined defect; the position information of the nth film region is used to determine the position information of the predetermined defect on the insulating layer.
  • the conductive film is divided into N film areas; the film area covers the insulating layer of the target, and is coupled with the metal shell of the corresponding film area, if the insulating layer exists
  • the condition of the predetermined defect will change the capacitance value formed by the coupling between the metal shell and the corresponding film area, thereby changing the collection signal generated by the collection unit.
  • any tiny defect on the insulating layer of the target can be easily detected by the detection device; at the same time, based on the position information of the film area, the position of the predetermined defect on the target can be located, so as to realize the predetermined defect detection. Realize the positioning of predetermined defects.
  • the detection device further includes a processing unit connected to the signal receiver, and the processing unit is configured to determine whether the region of the insulating layer covered by the nth film region has a predetermined defect according to the nth collected signal.
  • the processing unit is specifically configured to determine the thickness of the region of the insulating layer covered by the nth film region according to the nth acquisition signal, determine whether the thickness is within a predetermined thickness range, and determine whether the nth film region is outside the predetermined thickness range.
  • the region of the insulating layer covered by the film region has a predetermined defect; when the thickness is within the predetermined thickness range, it is determined that the region of the insulating layer covered by the nth film region does not have the predetermined defect.
  • the processing unit is specifically configured to compare the nth collected signal with the preset signal, and when the difference between the nth collected signal and the preset signal is within the preset difference range, determine the area covered by the nth film area.
  • the region of the insulating layer has no predetermined defect; or, when the difference between the nth collected signal and the preset signal is outside the preset difference range, it is determined that the region of the insulating layer covered by the nth film region has a predetermined defect.
  • the detection device further includes: a communication unit, configured to use the position information of the nth film region as the location information of the predetermined defect on the insulating layer when the processing unit determines that the region of the insulating layer covered by the nth film region has a predetermined defect Position information output.
  • the detection device further includes a pressing plate, and the conductive film is arranged on the pressing plate.
  • the nth collection unit is located between the platen and the nth membrane region.
  • the nth acquisition unit is located on the nth membrane region and is electrically isolated from the nth membrane region.
  • the pressing plate has an alignment mechanism for aligning the conductive film with the predetermined position of the target.
  • the alignment mechanism includes alignment marks on the platen; wherein the alignment marks are used to align with a predetermined position of the target; or,
  • the alignment mechanism includes a leaning plate on the pressing plate; the leaning plate is located on the side of the conductive film, and the leaning plate is used to lean against the predetermined position of the target.
  • the signal generator is a common signal generator, and the common signal generator is used to transmit the first electromagnetic signal to the N film regions; or,
  • the nth film region corresponds to the nth signal generator, wherein the nth signal generator is used to emit the first electromagnetic signal to the nth film region.
  • the target includes a cell casing or a battery casing; the cell casing or the battery casing includes a metal casing and an insulating layer covering the surface of the metal casing.
  • a target detection and repair system including:
  • the detection device provided by any one of the aforementioned technical solutions;
  • the repairing device is connected with the detection device, and the repairing device is used to receive the position information of the predetermined defect on the insulating layer of the target output by the detection device, and eliminate the predetermined defect according to the position information.
  • the beneficial effects of the target detection and repair system provided by the embodiment of the present application are: firstly, use the detection device provided by the foregoing embodiment to detect whether there is a predetermined defect on the insulating layer of the target;
  • the location information of the area determines the location information of the predetermined defect, so as to realize the location of the predetermined defect while simply realizing the detection of the predetermined defect.
  • the repairing device includes a glue dispensing device, and the glue dispensing device is used to repair glue on the insulating layer according to the location information of the predetermined defect.
  • Fig. 1 is a schematic structural diagram of a detection device provided by an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a conductive film provided by an embodiment of the present application.
  • Fig. 3 is a schematic structural diagram of a detection device provided by an embodiment of the present application.
  • Fig. 4 is a schematic structural diagram of a detection device provided by an embodiment of the present application.
  • Fig. 5 is a schematic structural diagram of a detection device attached to a target provided by an embodiment of the present application.
  • Fig. 6 is a schematic structural diagram of an object provided by an embodiment of the present application.
  • Fig. 7 is a schematic structural diagram of a pressing plate provided by an embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a target detection and repair system provided by an embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of a target detection and repair system provided by an embodiment of the present application.
  • some embodiments of the present application provide a detection device 10 including a conductive film 11 , a signal generator 12 and a signal receiver 13 .
  • the conductive film 11 has N film regions 111, and any two film regions 111 are insulated from each other.
  • the conductive film 11 is used to bond with the insulating layer 32 of the target; the target includes a metal layer 31, and the insulating layer 32 covers the metal layer 31 .
  • the signal generator 12 is used for transmitting the first electromagnetic signal 01 to the conductive film 11 .
  • the signal receiver 13 includes N acquisition units 131, the nth film region 111 corresponds to the nth acquisition unit 131, and the acquisition unit 131 is used for the first electromagnetic signal 01 generated after the first electromagnetic signal 01 passes through the conductive film 11, the insulating layer 32 and the metal layer 31.
  • the nth collected signal is obtained from the second electromagnetic signal; wherein, n is a positive integer less than or equal to N.
  • the collected signals are used to determine whether there is a predetermined defect 33 in the region of the insulating layer 32 covered by the nth film region 111 .
  • the position information of the nth film region 111 is used to determine the position information of the predetermined defect 33 on the insulating layer 32 .
  • the position information of the nth film region 111 may include coordinates of the nth film region 111 .
  • the coordinates of the nth film region 111 may be the row number and column number or serial number of the nth film region 111 in the rectangular array formed by the N film regions 111 .
  • the conductive film 11 may be a piezoelectric film, and the piezoelectric film may be a piezoelectric polyvinylidene fluoride (Polyvinylidene fluoride, PVDF) polymer film.
  • the piezoelectric thin film is a kind of conductive material, which can produce a corresponding response to the eddy current generated by the first electromagnetic signal 01 .
  • the first electromagnetic signal may be a high frequency electromagnetic signal.
  • the conductive film 11 in the embodiment of the present application is a very thin conductive film.
  • the target may include a metal layer 31 and an insulating layer 32 overlying the metal layer 31 .
  • the conductive film 11 is used to be bonded to the target insulating layer 32 .
  • the target may include a metal layer 31 and an insulating layer 32 covering the outer surface of the metal layer 31 .
  • a predetermined defect 33 may exist within the insulating layer 32 of the target.
  • Such targets include, but are not limited to, cell housings and/or battery housings.
  • the main part of the battery case and/or the battery case can be the metal layer 31 , for example, the main part of the battery case and/or the battery case can be an aluminum shell.
  • the insulating layer 32 disposed on the metal layer 31 may include an insulating coating sprayed on the surface of the metal layer 31 by a spraying process or an insulating film coated on the surface of the metal shell.
  • the battery case can be a battery case of a power battery, and the battery case can be a battery case of a power battery.
  • the power battery can be a lithium battery and/or a sodium battery, etc.
  • the signal generator 12 may include an AC power source and an excitation coil connected to the AC power source.
  • the AC power supply provides the excitation coil with AC power greater than a certain frequency threshold, and the excitation coil will generate a high-frequency alternating magnetic field under the action of the high-frequency AC power.
  • the signal generator 12 can be set separately or integrated with the conductive film 11 .
  • the collection unit 131 may include a receiving circuit, and the signal receiver 13 may induce a high-frequency alternating magnetic field to generate a collection signal.
  • the receiving circuit includes but is not limited to receiving coils.
  • the conductive film 11 is divided into N film regions 111 , and any two film regions 111 are insulated and isolated.
  • the N film regions 111 may be distributed in a rectangular array.
  • shapes and areas of any two film regions 111 of the N film regions 111 may be equal.
  • the conductive film 11 can be divided into N film regions 111 by a standard rectangular grid.
  • the area of one membrane region 111 may be a preset area, for example, the preset area may be 0.5 centimeter (cm)*0.5 cm or 1 cm*1 cm.
  • the preset area may be 0.5 centimeter (cm)*0.5 cm or 1 cm*1 cm.
  • this is only an example of the preset area, and the specific implementation is not limited to this example.
  • One film region 111 is connected to one collection unit 131 , and one film region 111 is coupled with the corresponding position of the metal layer 31 of the target to form a capacitor.
  • the thickness of the insulating layer 32 between the metal layer 31 and the film region 111 is different or whether it has defects will affect the capacitance of the capacitor coupled between the film region 111 and the metal layer 31 .
  • the signal value of the first electromagnetic signal 01 is changed, so that the acquisition circuit will acquire different first electromagnetic signals 01, thereby inductively generating acquisition signals with different signal characteristics .
  • the signal characteristics include, but are not limited to, the magnitude and/or phase of the first electromagnetic signal O1.
  • the signal characteristics of the collected signal of the nth collection unit 131 corresponding to the nth film region 111 it can be determined whether there is a predetermined defect 33 in the region of the insulating layer 32 covered by the nth film region 111 .
  • the collection signal may be a current signal formed by the collection unit 131 sensing the first electromagnetic signal 01 after the target and the film region 111 act together.
  • the signal characteristics include, but are not limited to, the magnitude, phase and/or frequency of the current signal.
  • the predetermined defect 33 includes but is not limited to at least one of the following:
  • the thickness of the insulating layer 32 cannot reach the required thickness
  • the surface of the insulating layer 32 has depressions or pores
  • the surface of the insulating layer 32 has cracks.
  • the predetermined defect 33 of the above-mentioned insulating layer 32 it will affect the thickness of the insulating layer 32 between the nth film region 111 and the metal layer 31 and/or the arrangement of the insulating layer 32, thereby affecting the nth film.
  • the capacitance value between the region 111 and the metal layer 31 The size of the capacitance value can be reflected by the signal characteristics of the acquisition signal of the acquisition unit 131 . Therefore, based on this principle, the predetermined defect 33 of the insulating layer 32 can be easily detected. Easy detection of defects.
  • any film region 111 in the N film regions 111 has its predetermined position, the position of the predetermined defect 33 on the insulating layer 32 can be located according to the position of the nth film region 111, so not only the insulating layer 32 is realized.
  • the detection of the predetermined defect 33 on the insulating layer 32 also realizes the positioning of the predetermined defect 33 on the insulating layer 32.
  • the detection device 10 further includes a processing unit 14 .
  • the processing unit 14 is connected to the signal receiver 13, and the processing unit 14 is configured to determine whether the region of the insulating layer 32 covered by the nth film region 111 has a predetermined defect 33 according to the nth collected signal.
  • the processing unit 14 may include various structures with information processing capabilities, for example, the processing unit 14 may include but not limited to a central processing unit (CPU), a microprocessor (MCU), an embedded controller Or application specific integrated circuits, etc.
  • CPU central processing unit
  • MCU microprocessor
  • embedded controller or application specific integrated circuits, etc.
  • the processing unit 14 may also be a host computer connected to the acquisition unit 131 .
  • the host computer includes, but is not limited to, electronic equipment such as a personal computer (PC).
  • the processing unit 14 may have a comparison circuit, which is used to perform a corresponding comparison according to the collected nth collection signal, and determine the area of the insulating layer 32 covered by the nth film region 111 based on the comparison result Whether there is a predetermined defect33.
  • one input end of the comparison circuit may be connected to the output end of the acquisition unit 131 , and the other input end of the comparison circuit may be connected to a reference current source or a reference voltage source.
  • the reference current source and/or the reference voltage source may provide a corresponding predetermined signal when the insulating layer 32 has no predetermined defect 33 .
  • the processing unit 14 can be connected with all the acquisition units 131, and is used to determine whether the area of the insulating layer 32 covered by the n-th film region 111 corresponding to the n-th acquisition unit 131 is based on the aforementioned predetermined defect 33 according to the n-th acquisition signal.
  • the detection device 10 itself can quickly judge whether there is a predetermined defect 33 in the area of the insulating layer 32 covered by the corresponding film region 111, and locate the specific position information of the predetermined defect 33.
  • the processing unit 14 is specifically configured to determine the thickness of the region of the insulating layer 32 covered by the nth film region 111 according to the nth collected signal, determine whether the thickness is within a predetermined thickness range, and when the thickness is outside the predetermined thickness range, It is determined that the region of the insulating layer 32 covered by the nth film region 111 has a predetermined defect 33; when the thickness is within a predetermined thickness range, it is determined that the region of the insulating layer 32 covered by the nth film region 111 does not have a predetermined defect 33.
  • the processing unit 14 knows in advance the thickness range of the insulating layer 32 when there is no predetermined defect 33, and then maps the signal feature of the actually collected nth acquisition signal to the thickness of the insulating layer 32. According to this mapping relationship and the actual The signal characteristics of the nth collected signal are collected to obtain the thickness of the insulating layer 32 covered by the nth film region 111, and then compare and judge whether the calculated thickness is within the preset thickness range, thereby determining that the nth film region 111 covers Whether the region of the insulating layer 32 has a predetermined defect 33.
  • the processing unit 14 is specifically configured to compare the nth collected signal with the preset signal, and determine the nth film region 111 when the difference between the nth collected signal and the preset signal is within the preset difference range
  • the area of the insulating layer 32 covered has no predetermined defect 33; or, when the difference between the nth acquisition signal and the preset signal is outside the preset difference range, it is determined that the area of the insulating layer 32 covered by the nth film region 111 has Book defect 33.
  • the processing unit 14 may know in advance the characteristics of the signal collected by the region corresponding to the insulating layer 32 without the predetermined defect 33, and when the nth collection signal is actually collected subsequently, the actual signal characteristics of the nth collection signal and the characteristics of the preset signal may be compared. Whether the region of the insulating layer 32 covered by the n-th film region 111 has a predetermined defect 33 is determined by judging whether the difference between the two signal features is within a preset difference range.
  • the detection device 10 further includes: a communication unit 16 configured to send the nth The positional information of the film region 111 is output as the positional information of the predetermined defect 33 on the insulating layer 32 .
  • the communication unit 16 can be a wired communication unit or a wireless communication unit. If the communication unit 16 is a wired communication unit, the communication unit 16 may include a wired network interface, etc., and may be used to output the location information of the insulating layer 32 where the predetermined defect 33 is located to an external device.
  • the communication unit 16 may include a transceiver antenna, and may output the position information of the insulating layer 32 where the predetermined defect 33 is located to an external device through the transceiver antenna. If the communication unit 16 is a wireless communication unit, the communication unit 16 may include but not limited to a Bluetooth communication unit, an infrared communication unit, an Ultra Wide Band (UWB) communication unit or a WiFi communication unit.
  • a Bluetooth communication unit an infrared communication unit
  • UWB Ultra Wide Band
  • the position information of the predetermined defect 33 it may be directly determined according to the position information of the film region 111 where the predetermined defect 33 is detected.
  • the detection device 10 further includes a pressing plate 15 on which the conductive film 11 is disposed.
  • This pressing plate 15 can be a kind of insulating plate, itself has certain weight, on the one hand provides through its own weight, can make conductive film 11 be pressed on target insulating layer 32 very closely, thereby reduces the contact between conductive film 11 and insulating layer. 32; on the other hand, the press plate 15 can be used as the carrying substrate of the conductive film 11.
  • the pressing plate 15 can be a macromolecular plastic plate, which has sufficient strength and a certain weight.
  • the nth collection unit 131 is located between the platen 15 and the nth membrane region 111 .
  • the acquisition unit 131 may include an acquisition circuit, and the acquisition circuit is located between the nth film region 111 and the pressure plate 15, so the side of the nth film region 111 not provided with the acquisition unit 131 can be well attached to the insulating layer 32 of the target.
  • the insulating isolation zone is the above-mentioned electrical isolation structure.
  • the pressing plate 15 has an alignment mechanism 17 for aligning the conductive film 11 with the predetermined position of the target.
  • the alignment mechanism 17 can be used to align the detection device 10 with the target, so the position information of the film region 111 can be regarded as the position information of the defect location.
  • alignment mechanism 17 includes alignment marks on platen 15 . Wherein, the alignment mark is used to align with the predetermined position of the target; FIG. 7 shows an alignment mark on the alignment mechanism 17 .
  • the alignment marks may be scales or notches or coating marks on the platen 15 .
  • the marker can be aligned with a predetermined location of the target object.
  • the predetermined position may be a specific position of the target, for example, the left vertex of the battery case.
  • the predetermined location may also be where one or more alignment marks on the target are located.
  • the position information of the predetermined defect 33 can be easily located directly according to the position information of the film region 111 .
  • alignment mechanism 17 may include a rest on platen 15 .
  • the backing board is located on the side of the conductive film 11, and the backing board is used to lean against a predetermined position of the target.
  • the backing board can be used to make the predetermined position of the target move past, so as to realize the alignment of the conductive film 11 and the target.
  • the signal generator 12 is a common signal generator for transmitting the first electromagnetic signal 01 to the N film regions 111;
  • the nth film region 111 corresponds to the nth signal generator 12 , wherein the nth signal generator 12 is used to transmit the first electromagnetic signal 01 to the nth film region 111 .
  • the signal generator 12 can be a structure separate from the acquisition unit 131 , and can transmit the first electromagnetic signal 01 to the area where the conductive film 11 is located.
  • all membrane regions 111 can share one signal generator 12; the shared signal generator 12 is the common signal generator 12, and all membrane regions 111 share one signal generator 12, thus having the characteristics of simple structure .
  • one membrane region 111 corresponds to one signal generator 12 , so that the signal generator 12 only emits the first electromagnetic signal 01 to the corresponding membrane region 111 . Therefore, the detection of the insulating layer 32 in each region can realize individual control.
  • the target includes a cell case or a battery case.
  • the cell case or the battery case both includes a metal case and an insulating layer 32 covering the surface of the metal case.
  • the metal shell constitutes the metal layer 31 of the target.
  • the metal casing here includes, but is not limited to, an aluminum casing.
  • the insulating layer 32 includes but is not limited to a sprayed insulating layer 32 , an electroplated insulating layer 32 or an insulating film coated on the surface of the metal shell.
  • the battery case can be a battery case of a primary battery or a secondary battery; the battery case can be a battery case of a primary battery or a secondary battery.
  • an embodiment of the present application provides a target detection and repair system, including a repair device 20 and the detection device 10 provided by any of the aforementioned technical solutions.
  • the repairing device 20 is connected with the detection device 10, and the repairing device 20 is used for receiving the position information of the predetermined defect 33 on the insulating layer 32 of the cell case output by the detection device 10, and eliminating the predetermined defect 33 according to the position information.
  • the detection device 10 will send the location information of the predetermined defect 33 to the repairing device 20 when detecting that the insulating layer 32 of the target has a predetermined defect 33, so that the repairing device 20 will target according to the location information
  • the predetermined defect 33 is repaired, thereby realizing the detection and repair of the target insulating layer 32 .
  • the repairing device 20 includes a glue dispensing device 21 , and the glue dispensing device 21 is used to repair the insulating layer 32 according to the position information of the predetermined defect 33 .
  • the glue dispensing device 21 may include a glue dispensing head, which can repair the problem that the thickness of the insulating layer 32 on the target is insufficient, or there is a depression or damage by dispensing glue.
  • the dispensing head of the dispensing device 21 is loaded with insulating colloid with a certain fluidity. After receiving the position information of the predetermined defect 33, the dispensing head moves to the corresponding position information to extrude the colloid and cure the colloid, thereby completing the predetermined defect. 33 fixes.
  • the glue dispensing device 21 can be connected with the information processing device 22 , and the information processing device 22 can repair the predetermined defect 33 by dispensing glue according to the position information provided by the detection device 10 .
  • the detection device 10 is also used to re-test the object repaired by the repair device 20 to determine whether the predetermined defect 33 is repaired successfully.
  • the principle of judging the microscopic defects on the surface, and through the multi-position simultaneous detection scheme in different regions, can quickly and effectively detect the position where the insulating layer 32 on the battery surface fails. And the number, it is convenient to rework the small defect position in the later stage.
  • Defects on the insulating layer 32 on the surface of the battery include tiny defects on the surface, as well as tiny defects such as air bubbles and burrs in the film, which are difficult for employees and CCD to detect, and can also be detected by the detection device 10 provided in the embodiment of the present application. .
  • the embodiment of the present application provides a device for quickly testing the surface defects of the insulating film on the surface of the battery in different regions, including a flat pressing plate, a collection unit 131 and an information processing device 22 .
  • a piezoelectric film is attached to the acquisition unit 131 , and different regions of the piezoelectric film have multiple independent acquisition circuits.
  • the piezoelectric film is one of the aforementioned conductive films 11 .
  • the acquisition circuit on the piezoelectric film has been arranged in a fixed position, and the position information of the defect is directly fed back after the defect is determined.
  • the collection position on the piezoelectric film corresponds to the information processing interface in different areas, which can directly locate the surface defect position, and can locate multiple predetermined defect 33 points at the same time, which is convenient for rework operations.
  • the current signal between the piezoelectric film and the surface of the workpiece can be collected and converted into a film thickness difference.
  • the insulating layer 32 is damaged due to internal and external factors. Damage to the insulating layer 32 or internal air bubbles will cause the thickness of the insulating layer 32 to become thinner.
  • the flat tooling covered with the piezoelectric film is tightly contacted with the cell insulating film.
  • the collected electrical signal is converted into a film thickness, and the film thickness difference is calculated with the pre-input film thickness requirement value, which is lower than the pre-input film thickness difference value threshold, the system judges it as predetermined defect 33 points, and the location of predetermined defect 33 can be located through the arrangement of the acquisition unit 131 in Figure 9, which is convenient for automatic dispensing and rework.
  • the flat tooling is tightly pressed against the insulating layer 32 on the surface of the cell.
  • the conductive film 11 is based on a high-frequency electromagnetic field, making the metal conductor placed under the flat indenter Create a vortex.
  • the amplitude and phase of the eddy current are functions of the thickness of the insulating layer 32 between the conductor and the conductive film 11 , that is, the alternating electromagnetic field generated by the eddy current will change the parameters of the probe.
  • the collection unit 131 collects the eddy current to obtain a collection signal, and the signal parameters (ie, signal characteristics) of the collection signal are input into the information processing device 22 .
  • the information processing device 22 calculates the thickness of the insulating layer 32 according to the signal characteristics of the collected signal, calculates the film thickness difference of the insulating layer 32 collected by each collecting unit 131 through the estimated input film thickness demand value and the film thickness difference threshold, and calculates the film thickness difference of the insulating layer 32 collected by each collection unit 131, and calculates the film thickness difference of the insulating layer 32 collected by each collection unit 131.
  • the film thickness difference threshold is compared to determine whether there is a predetermined defect 33 .
  • the flat tooling can include that the conductive film 11 can be pressed on the outer surface of the cell case by a pressing plate 15 .
  • the coordinates of the film area 111 where the predetermined defect 33 is located will be output, so that repair devices 20 such as automatic dispensing equipment can automatically replenish glue and rework to eliminate the predetermined defect 33 .
  • the automatic dispensing equipment can be integrated in the information processing device 22. After the coordinates are fed back by the acquisition unit 131, it will synchronously feed back and give the dispensing equipment a glue output signal, and the dispensing equipment will automatically replenish glue and rework.
  • the acquisition unit 131 can exist independently on the piezoelectric film, and can test predetermined defects 33 at different positions at the same time, so as to prevent missed detection and error finding, and improve detection efficiency and rework efficiency.
  • the piezoelectric film is attached to the flat plate 15 to ensure sufficient contact between the piezoelectric film and the surface insulating layer 32 to prevent the problem of too large error or high probability of misjudgment.

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Abstract

一种检测装置（10）及目标检测修复系统。该检测装置（10）包括：导电膜（11），具有N个膜区域（111），导电膜（11）用于与目标的绝缘层（32）贴合；目标包括金属层（31），绝缘层（32）覆盖在金属层（31）上；信号发生器（12），用于向导电膜（11）发射第一电磁信号（01）；信号接收器（13），包括N个采集单元（131），第n膜区域（111）对应第n采集单元（131），信号接收器（13）用于得到第n采集信号；采集信号用于确定第n膜区域（111）覆盖的绝缘层（32）的区域是否有预定缺陷（33）；第n膜区域（111）的位置信息用于确定绝缘层（32）上预定缺陷（33）的位置信息。

Description

检测装置及目标检测修复系统
交叉引用
本申请要求于2021年10月15日在中国专利局提交的、申请号为202122495148.5、实用新型名称为“检测装置及目标检测修复系统”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及检测技术领域，具体涉及一种检测装置及目标检测修复系统。
背景技术
电芯表面具有绝缘层，该绝缘层的绝缘性和耐压性足够，才能保证电芯的安全性。如此，绝缘层的微小缺陷都可能会导致绝缘层的绝缘耐压失效。但是微小缺陷，产线工人肉眼和电荷耦合器件(charge coupled device，CCD)相机检测到的难度很大。
发明内容
本申请实施例的目的之一在于：提供一种检测装置及目标检测修复系统，至少能够简化绝缘层的微小缺陷检测，并较准确地定位绝缘层上的缺陷位置。
本申请实施例采用的技术方案是：
第一方面，提供了一种检测装置，包括：
导电膜，具有N个膜区域，任意两个膜区域之间相互绝缘，导电膜用于与目标的绝缘层贴合；目标包括金属层，绝缘层覆盖在金属层上；
信号发生器，用于向导电膜发射第一电磁信号；
信号接收器，包括N个采集单元，第n膜区域对应第n采集单元，信号接收器用于第一电磁信号经过导电膜、绝缘层及金属层作用之后产生的第二电磁信号得到第n采集信号；其中，n为小于或等于N的正整数；
其中，采集信号用于确定第n膜区域覆盖的绝缘层的区域是否有预定缺陷；第n膜区域的位置信息用于确定绝缘层上预定缺陷的位置信息。
本申请实施例提供的检测装置的有益效果在于：导电膜被分割为N个膜区域；该膜区域覆盖在目标的绝缘层上，并与对应膜区域的金属壳体耦合，若出现绝缘层存在预定缺陷的情况会使得金属壳体和对应膜区域之间耦合形成的电容值发生变化，从而使得采集单元所产生的采集信号发生变化。如此，通过检测装置可以简便的检测出目标的绝缘层上的任意微小的缺陷；同时，基于膜区域的位置信息就可以定位出目标上的预定缺陷所在的位置，从而实现预定缺陷检测的同时，实现预定缺陷的定位。
在一个实施例中，检测装置还包括处理单元，处理单元与信号接收器连接，处理单元用于根据第n采集信号确定第n膜区域覆盖的绝缘层的区域是否具有预定缺陷。
在一个实施例中，处理单元具体用于根据第n采集信号确定第n膜区域覆盖的绝缘层的区域的厚度，确定厚度是否位于预定厚度范围内，当厚度位于预定厚度范围外，确定第n膜区域覆盖的绝缘层的区域具有预定缺陷；当厚度位于预定厚度范围内，确定第n膜区域覆盖的绝缘层的区域不具有预定缺陷。
在一个实施例中，处理单元具体用于比较第n采集信号与预设信号，当第n采集信号与预设信号之间的差值位于预设差值范围内，确定第n膜区域覆盖的绝缘层的区域无预定缺陷；或者，当第n采集信号与预设信号之间的差值位 于预设差值范围外，确定第n膜区域覆盖的绝缘层的区域具有预定缺陷。
在一个实施例中，检测装置还包括：通信单元，用于在处理单元确定第n膜区域覆盖的绝缘层的区域具有预定缺陷时，将第n膜区域的位置信息作为绝缘层上预定缺陷的位置信息输出。
在一个实施例中，检测装置还包括压板，导电膜设置在压板上。
在一个实施例中，第n采集单元位于压板和第n膜区域之间。
在一个实施例中，第n采集单元位于第n膜区域上，且与第n膜区域电隔离。
在一个实施例中，压板上具有对齐机构，对齐机构用于与导电膜与目标的预定位置对齐。
在一个实施例中，对齐机构包括位于压板上的对齐标记；其中，对齐标记用于与目标的预定位置对齐；或者，
对齐机构包括位于压板上的靠板；靠板位于导电膜的侧面，靠板用于靠在目标的预定位置。
在一个实施例中，信号发生器为公共信号发生器，公共信号发生器用于向N个膜区域发射第一电磁信号；或者，
第n膜区域对应于第n信号发生器，其中，第n信号发生器用于向第n膜区域发射第一电磁信号。
在一个实施例中，目标包括电芯壳体或者电池壳体；电芯壳体或电池壳体包括金属壳体及覆盖在金属壳体表面的绝缘层。
第二方面，提供一种目标检测修复系统，包括：
前述任意一个技术方案提供的检测装置；
修复装置，与检测装置连接，修复装置用于接收检测装置输出的目标的绝 缘层上预定缺陷的位置信息，并根据位置信息消除预定缺陷。
本申请实施例提供的目标检测修复系统的有益效果在于：先利用前述实施例提供的检测装置检测出目标的绝缘层上是否存在预定缺陷，若存在预定缺陷，则进一步根据检测到预定缺陷的膜区域的位置信息确定出预定缺陷的位置信息，从而在简便实现预定缺陷检测的同时，实现预定缺陷的定位。
在一个实施例中，修复装置包括点胶装置，点胶装置用于根据预定缺陷的位置信息对绝缘层进行补胶。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例或示范性技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为本申请一个实施例提供的一种检测装置的结构示意图；
图2为本申请一个实施例提供的一种导电膜的结构示意图。
图3为本申请一个实施例提供的一种检测装置的结构示意图。
图4为本申请一个实施例提供的一种检测装置的结构示意图。
图5为本申请一个实施例提供的一种检测装置贴附到目标上的结构示意图。
图6为本申请一个实施例提供的一种目标的结构示意图。
图7为本申请一个实施例提供的压板的结构示意图。
图8为本申请一个实施例提供的一种目标检测修复系统的结构示意图。
图9为本申请一个实施例提供的一种目标检测修复系统的结构示意图。
附图标记说明：
10、检测装置；11、导电膜；111、膜区域；12、信号发生器；13、信号接收器；131、采集单元；14、处理单元；15、压板；16、通信单元；17、对齐机构；
20、修复装置；21、点胶装置；22、信息处理装置；
31、金属层；32、绝缘层；33、预定缺陷。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
需说明的是，当部件被称为“固定于”或“设置于”另一个部件，它可以直接在另一个部件上或者间接在该另一个部件上。当一个部件被称为是“连接于”另一个部件，它可以是直接或者间接连接至该另一个部件上。术语“上”、“下”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制，对于本领域的普通技术人员而言，可以根据具体情况理解上述术语的具体含义。术语“第一”、“第二”仅用于便于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明技术特征的数量。“多个”的含义是两个或两个以上，除非另有明确具体的限定。
为了说明本申请所提供的技术方案，以下结合具体附图及实施例进行详细说明。
如图1至图3所示，本申请的一些实施例提供一种检测装置10，包括导电膜11、信号发生器12和信号接收器13。导电膜11具有N个膜区域111，任意两个膜区域111之间相互绝缘，导电膜11用于与目标的绝缘层32贴合；目标包括金属层31，绝缘层32覆盖在金属层31上。信号发生器12用于向导电膜11发射第一电磁信号01。信号接收器13包括N个采集单元131，第n膜区域111对应第n采集单元131，采集单元131用于第一电磁信号01经过导电膜11、绝缘层32及金属层31作用之后产生的第二电磁信号得到第n采集信号；其中，n为小于或等于N的正整数。采集信号用于确定第n膜区域111覆盖的绝缘层32的区域是否有预定缺陷33。第n膜区域111的位置信息用于确定绝缘层32上预定缺陷33的位置信息。
该第n膜区域111的位置信息可包括第n膜区域111的坐标。示例性地，该第n膜区域111的坐标可为第n膜区域111在N个膜区域111所形成的矩形阵列中的行号以及列号或者编号。
该导电膜11可为压电膜，该压电膜可为压电聚偏氟乙烯(Polyvinylidence fluoride，PVDF)高分子膜。压电薄膜是一种导体材料，对第一电磁信号01所产生的涡流能够产生对应的反应。
在一些实施例中，第一电磁信号可以是高频电磁信号。
本申请实施例中的导电膜11是一种厚度很薄的导电薄膜。
目标可包括金属层31和覆盖在金属层31上的绝缘层32。该导电膜11用于与目标的绝缘层32贴合。参看图5和图6所示，目标可包括金属层31和覆盖在金属层31外表面的绝缘层32。目标的绝缘层32内可能存在预定缺陷33。
该目标包括但不限于电芯壳体和/或电池壳体。电芯壳体和/或电池壳体的主体部分可为金属层31，例如，电芯壳体和/或电池壳体的主体部分可为铝壳。 在金属层31上配置的绝缘层32可包括通过喷涂工艺喷涂在金属层31表面的绝缘涂层或者包覆在金属壳体表面的绝缘膜。
该电芯壳体可为动力电池的电芯壳体，该电池壳体可为动力电池的电池壳体。该动力电池可为锂电池和/或钠电池等。
信号发生器12可包括交流电源以及与交流电源连接的激励线圈。该交流电源向激励线圈提供大于一定频率阈值的交流电，激励线圈在高频交流电的作用下将产生高频交变磁场。
该信号发生器12可与导电膜11分离设置或者集成设置。
采集单元131可包括接收电路，该信号接收器13可以感应高频交变磁场，从而产生采集信号。该接收电路包括但不限于接收线圈。
在本公开实施例中，导电膜11被划分为了N个膜区域111，任意两个膜区域111是绝缘隔离的。这N个膜区域111可以呈矩形阵列分布。
示例性地，N个膜区域111的任意两个膜区域111的形状和面积可相等。例如，导电膜11可被标准的矩形网格划分为N个膜区域111。
示例性地，一个膜区域111的面积可为预设面积，例如，该预设面积可为0.5厘米(cm)*0.5cm或者1cm*1cm。当然此处仅仅是对预设面积的举例，具体实现不局限于该举例。
一个膜区域111连接一个采集单元131，而一个膜区域111与目标的金属层31对应位置区域耦合形成一个电容。而位于金属层31与膜区域111之间的绝缘层32的厚度不同或者是否具有缺陷，都会影响该膜区域111与金属层31所耦合成电容的电容值。如此，高频交变磁场经过不同电容值的电容时，第一电磁信号01的信号值被改变，从而采集电路将采集到不同的第一电磁信号01，从而感应生成具有不同信号特征的采集信号。该信号特征包括但不限于第一电 磁信号01的幅度和/或相位。
有鉴于此，根据第n膜区域111对应的第n采集单元131的采集信号的信号特征，可以确定出第n膜区域111覆盖的绝缘层32的区域是否有预定缺陷33。
该采集信号可为采集单元131感应经过目标和膜区域111共同作用后的第一电磁信号01所形成的电流信号。该信号特征包括但不限于电流信号的幅度、相位和/或频率。
该预定缺陷33包括但不限于以下至少之一：
绝缘层32的厚度达不到要求厚度；
绝缘层32内具有气泡；
绝缘层32表面具有凹陷或者气孔；
绝缘层32表面具有破损。
不管上述哪一种绝缘层32的预定缺陷33，都会使得绝缘层32在第n膜区域111和金属层31之间的厚度和/或绝缘层32的摆放形态有影响，从而影响第n膜区域111和金属层31之间的电容值。而电容值的大小是可以通过采集单元131的采集信号的信号特征来体现的。因此，可以基于这种原理，可以简便的检测出绝缘层32的预定缺陷33，例如，绝缘层32上的微小气孔甚至绝缘层32内部的气泡等缺陷都可以检测出来，从而实现了绝缘层32上缺陷的简便检测。且由于N个膜区域111中的任意一个膜区域111是有其预定位置的，因此可以根据第n膜区域111的位置定位出绝缘层32上预定缺陷33的位置，故而不仅实现了绝缘层32上预定缺陷33的检测，同时还实现了绝缘层32上预定缺陷33的定位。
在一个实施例中，参考图3和图4所示，检测装置10还包括处理单元14。 处理单元14与信号接收器13连接，处理单元14用于根据第n采集信号确定第n膜区域111覆盖的绝缘层32的区域是否具有预定缺陷33。
在一个实施例中，该处理单元14可包括各种具有信息处理能力的结构，例如，该处理单元14可包括但不限于中央处理器(CPU)、微处理器(MCU)、嵌入式控制器或者专用集成电路等。
在另一个实施例中，该处理单元14还可为与采集单元131连接的上位机。该上位机包括但不限于个人电脑(PC)等电子设备。
在还有一个实施例中，该处理单元14可具有比较电路，比较电路用于根据采集的第n采集信号进行相应的比较，基于比较的结果确定第n膜区域111覆盖的绝缘层32的区域是否具有预定缺陷33。示例性地，该比较电路的一个输入端可与采集单元131的输出端连接，比较电路的另一个输入端可以连接参考电流源或者参考电压源。参考电流源和/或参考电压源可以提供绝缘层32无预定缺陷33时对应的预定信号。
处理单元14可与所有采集单元131连接，用于根据第n采集信号确定出第n采集单元131对应的第n膜区域111覆盖的绝缘层32的区域是否基于上述预定缺陷33。
通过处理单元14的引入，检测装置10自身就可以实现对应膜区域111覆盖的绝缘层32的区域是否有预定缺陷33的快速判断，并定位出有预定缺陷33的具体位置信息。
在一些实施例中，处理单元14具体用于根据第n采集信号确定第n膜区域111覆盖的绝缘层32的区域的厚度，确定厚度是否位于预定厚度范围内，当厚度位于预定厚度范围外，确定第n膜区域111覆盖的绝缘层32的区域具有预定缺陷33；当厚度位于预定厚度范围内，确定第n膜区域111覆盖的绝 缘层32的区域不具有预定缺陷33。
例如，处理单元14预先知晓绝缘层32没有预定缺陷33时的厚度范围，然后将实际采集的第n采集信号的信号特征与绝缘层32的厚度之间的映射关系，根据这种映射关系和实际采集的第n采集信号的信号特征，得到第n膜区域111覆盖的绝缘层32的区域的厚度，进而比较判断计算得到的厚度是否位于预设厚度范围内，从而确定出第n膜区域111覆盖的绝缘层32的区域是否具有预定缺陷33。
在一些实施例中，处理单元14具体用于比较第n采集信号与预设信号，当第n采集信号与预设信号之间的差值位于预设差值范围内，确定第n膜区域111覆盖的绝缘层32的区域无预定缺陷33；或者，当第n采集信号与预设信号之间的差值位于预设差值范围外，确定第n膜区域111覆盖的绝缘层32的区域具有预定缺陷33。
该处理单元14可该预先知晓绝缘层32对应区域无预定缺陷33所采集的信号特征，后续实际采集到第n采集信号时，可以将第n采集信号的实际信号特征与预设信号的特征，通过判断两个信号特征之间的差值是否位于预设差值范围内，确定第n膜区域111所覆盖的绝缘层32的区域是否具有预定缺陷33。
采用这种基于信号特征直接比较判断，也可以快速地确定是否各个膜区域111所覆盖绝缘层32的区域是否具有预定缺陷33。
在一些实施例中，参考图4所示，检测装置10还包括：通信单元16，用于在处理单元14确定第n膜区域111覆盖的绝缘层32的区域具有预定缺陷33时，将第n膜区域111的位置信息作为绝缘层32上预定缺陷33的位置信息输出。
该通信单元16可为有线通信单元或者无线通信单元。若该通信单元16为 有线通信单元，则该通信单元16可包括有线的网络接口等，可以用于向外部设备输出预定缺陷33所在绝缘层32的位置信息。
若该通信单元16为无线通信单元，可包括收发天线，可以通过收发天线向外部设备输出与预定缺陷33所在绝缘层32的位置信息。若该通信单元16为无线通信单元，则该通信单元16可包括但不仅限于蓝牙通信单元、红外通信单元、超宽带(Ultra Wide Band，UWB)通信单元或者WiFi通信单元。
具体输出预定缺陷33的位置信息时，可以直接根据检测到预定缺陷33的膜区域111的位置信息确定。
在一些实施例中，如图5所示，检测装置10还包括压板15，导电膜11设置在压板15上。
该压板15可为一种绝缘板，自身具有一定的重量，一方面提供通过自身的重量，可以使得导电膜11很贴合地压在目标的绝缘层32上，从而减少导电膜11与绝缘层32之间的间隙；另一方面该压板15可以作为导电膜11的承载基板。
在一些实施例中，压板15可为大分子塑胶板，自身具有足够的强度，且具有一定的重量。
第n采集单元131位于压板15和第n膜区域111之间。
采集单元131可以包括采集电路，采集电路位于第n膜区域111与压板15之间，则第n膜区域111未设置采集单元131的一面，可以很好地贴合到目标的绝缘层32上。
在一个实施例中，第n采集单元131与第n膜区域111之间具有绝缘隔离带。该绝缘隔离带就是上述电隔离的结构。
在一个实施例中，参考图7所示，压板15上具有对齐机构17，对齐机构 17用于与导电膜11与目标的预定位置对齐。
该对齐机构17可以用于该检测装置10与目标的对齐，因此可以将膜区域111的位置信息视为缺陷所在位置的位置信息。
在一些实施例中，对齐机构17包括位于压板15上的对齐标记。其中，对齐标记用于与目标的预定位置对齐；图7所示为一种位于对齐机构17上的对齐标记。
例如，对齐标记可为位于压板15上刻度或者刻痕或者涂层标记。该标记可与目标目标的预定位置对齐。该预定位置可为目标的特定位置，例如，电芯壳体的左顶点。该预定位置也可以是目标上的一个或多个对齐标记所在的位置。
通过对齐标记的引入，可以确保直接根据膜区域111的位置信息简便定位出预定缺陷33所在位置信息。
在一些实施例中，对齐机构17可包括位于压板15上的靠板。靠板位于导电膜11的侧面，靠板用于靠在目标的预定位置。
该靠板可以用于使得目标的预定位置靠过去，从而实现导电膜11与目标的对齐。
在一些实施例中，信号发生器12为公共信号发生器，用于向N个膜区域111发射第一电磁信号01；
或者，
第n膜区域111对应于第n信号发生器12，其中，第n信号发生器12用于向第n膜区域111发射第一电磁信号01。
该信号发生器12可为与采集单元131分离的结构，可以向导电膜11所在区域发射第一电磁信号01。
在一个实施例中，所有膜区域111可以共用一个信号发生器12；该共用的信号发生器12即为公共信号发生器12，所有膜区域111共有一个信号发生器12，从而具有结构简单的特点。
在另一个实施例中，一个膜区域111对应于一个信号发生器12，如此该信号发生器12仅向对应膜区域111发射第一电磁信号01。因此各个区域的绝缘层32检测，就可以实现单独控制。
在一些实施例中，请参阅图5和图6，目标包括电芯壳体或者电池壳体。电芯壳体或电池壳体均包括金属壳体及覆盖在金属壳体表面的绝缘层32。该金属壳体即组成了目标的金属层31。
此处的金属壳体包括但不限于,铝壳体。该绝缘层32包括但不限于喷涂绝缘层32、电镀绝缘层32或者包覆在金属壳体表面的绝缘膜。
该电芯壳体可为一次电池或者二次电池的电芯壳体；该电池壳体可为一次电池或者二次电池的电池壳体。
如图8所示，本申请实施例提供一种目标检测修复系统，包括修复装置20和前述任意技术方案提供的检测装置10。修复装置20与检测装置10连接，修复装置20用于接收检测装置10输出的电芯壳体的绝缘层32上预定缺陷33的位置信息，并根据位置信息消除预定缺陷33。
若检测到预定缺陷33，则检测装置10在检测到目标的绝缘层32上具有预定缺陷33时会向修复装置20发送预定缺陷33的位置信息，如此，修复装置20将根据位置信息针对性的修复预定缺陷33，从而实现目标的绝缘层32的检测和修复。
在一些实施例中，如图9所示，修复装置20包括点胶装置21，点胶装置21用于根据预定缺陷33的位置信息对绝缘层32进行补胶。
点胶装置21可包括点胶头，可以通过点胶的方式修复目标上绝缘层32厚度不够，或者存在凹陷或者破损的问题。
点胶装置21的点胶头内装载有具有一定流动性的绝缘胶体，在接收到预定缺陷33的位置信息之后，点胶头移动到对应位置信息处挤出胶体，固化胶体，从而完成预定缺陷33的修复。
点胶装置21可以与信息处理装置22连接，该信息处理装置22可以根据检测装置10提供的位置信息，通过点胶对预定缺陷33进行修复。
在一些实施例中，检测装置10还用于对被修复装置20修复过的目标进行再次检测，以确定预定缺陷33是否有修复成功。
通过检测电池表面绝缘层32厚度差值，当差值低于阈值时判定出表面微小缺陷的原理，并通过分区域多位置同时检测的方案，能快速有效地检测电池表面绝缘层32失效的位置和个数，方便后期对微小缺陷位置做返工处理。
电池表面绝缘层32的缺陷除了表面的微小缺陷，还有膜内的气泡、毛刺等微小缺陷是员工和CCD检测难以检测到的，也可以通过本申请实施例提供的检测装置10都是检测出来。
本申请实施例提供一种分区域快速测试电池表面绝缘膜的表面缺陷的装置，包含平面压板、采集单元131和信息处理装置22。
采集单元131上附有压电薄膜，压电薄膜的不同区域具有多个独立的采集电路。该压电薄膜即为前述的导电膜11的一种。
压电薄膜上的采集电路已固定的位置排布，判定缺陷后直接反馈缺陷位置位置信息。
通过输入膜厚的要求和膜厚差的阈值要求，计算采集的电池表面的绝缘膜的膜厚与要求的膜厚差值，比对膜厚差的阈值要求，设备自动判定该位置是否 有表面缺陷；压电薄膜上采集位置分区域对应在信息处理界面，可以直接定位表面缺陷位置，且可以同时定位多个预定缺陷33点，便于返工操作。
可以采集压电薄膜与工件表面的电流信号，转化成膜厚差值。
电池组装过程中，绝缘层32由于内因和外因作用导致破损，绝缘层32破损或者内部气泡会导致绝缘层32厚度变薄，将覆盖有压电薄膜的平板工装紧紧接触在电芯绝缘膜上，通过图9上的压电薄膜上独立的采集单元131，将采集到的电信号转化成膜厚，与预先输入的膜厚要求值，计算膜厚差值，低于预先输入的膜厚差值阈值，则系统判定为预定缺陷33点，通过图9采集单元131排布位置可定位预定缺陷33的位置，便于自动点胶返工。
参考图9所示，平板工装紧紧压在电芯表面的绝缘层32，通过将平板压头压在导电膜11上，导电膜11基于高频电磁场，使置于平板压头下方的金属导体产生涡流。该涡流的振幅和相位是导体与导电膜11之间绝缘层32厚度的函数，即该涡流产生的交变电磁场会改变测头参数。
采集单元131采集涡流得到采集信号，该采集信号的信号参数(即信号特征)输入信息处理装置22。信息处理装置22根据采集信号的信号特征计算出绝缘层32的厚度，通过预算输入的膜厚需求值和膜厚差阈值，计算各个采集单元131采集到的绝缘层32的膜厚差，通过与膜厚差阈值对比，判定是否有预定缺陷33。
该平板工装可包括可通过压板15将导电膜11压在电芯壳体的外表面。
在信息处理装置22中，当判定出绝缘层32具有预定缺陷33后，会预定缺陷33所在膜区域111的坐标输出，便于自动点胶设备等修复装置20自动补胶返工，以消除预定缺陷33。
将自动点胶设备可集成在信息处理装置22中，当采集单元131反馈坐标 后，同步反馈并给点胶设备出胶信号，点胶设备自动补胶返工。
采集单元131可独立存在于压电薄膜上，可以同时测试出不同位置的预定缺陷33，防止漏测及找错，提高检测效率和返工效率。
压电薄膜附在平板15上，可以保证压电薄膜与表面绝缘层32充分接触，防止误差太大或者误判概率大的问题。
以上仅为本申请的可选实施例而已，并不用于限制本申请。对于本领域的技术人员来说，本申请可以有各种更改和变化。凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的权利要求范围之内。

Claims (14)

  1. 检测装置，其中，包括：
    导电膜，具有N个膜区域，任意两个所述膜区域之间相互绝缘，所述导电膜用于与目标的绝缘层贴合；所述目标包括金属层，所述绝缘层覆盖在所述金属层上；
    信号发生器，用于向所述导电膜发射第一电磁信号；
    信号接收器，包括N个采集单元，第n所述膜区域对应第n所述采集单元，所述信号接收器用于所述第一电磁信号经过所述导电膜、所述绝缘层及所述金属层作用之后产生的第二电磁信号得到第n采集信号；其中，n为小于或等于N的正整数；
    其中，所述采集信号用于确定第n所述膜区域覆盖的所述绝缘层的区域是否有预定缺陷；第n所述膜区域的位置信息用于确定所述绝缘层上所述预定缺陷的位置信息。
  2. 根据权利要求1所述的检测装置，其特征在于，所述检测装置还包括处理单元，所述处理单元与信号接收器连接，所述处理单元用于根据第n所述采集信号确定第n所述膜区域覆盖的所述绝缘层的区域是否具有所述预定缺陷。
  3. 根据权利要求2所述的检测装置，其特征在于，所述处理单元具体用于根据第n所述采集信号确定第n所述膜区域覆盖的所述绝缘层的区域的厚度，确定所述厚度是否位于预定厚度范围内，当所述厚度位于所述预定厚度范围外，确定第n所述膜区域覆盖的所述绝缘层的区域具有所述预定缺陷；当所述厚度位于所述预定厚度范围内，确定第n所述膜区域覆盖的所述绝缘层的区 域不具有所述预定缺陷。
  4. 根据权利要求2所述的检测装置，其特征在于，所述处理单元具体用于比较所述第n采集信号与预设信号，当所述第n采集信号与所述预设信号之间的差值位于预设差值范围内，确定第n所述膜区域覆盖的所述绝缘层的区域无所述预定缺陷；或者，当所述第n采集信号与所述预设信号之间的差值位于预设差值范围外，确定第n所述膜区域覆盖的所述绝缘层的区域具有所述预定缺陷。
  5. 根据权利要求2所述的检测装置，其特征在于，所述检测装置还包括：
    通信单元，用于在所述处理单元确定所述第n所述膜区域覆盖的所述绝缘层的区域具有所述预定缺陷时，将所述第n所述膜区域的位置信息作为所述绝缘层上所述预定缺陷的位置信息输出。
  6. 根据权利要求1至5任一项所述的检测装置，其特征在于，所述检测装置还包括压板，所述导电膜设置在所述压板上。
  7. 根据权利要求6所述的检测装置，其特征在于，第n所述采集单元位于所述压板和第n所述膜区域之间。
  8. 根据权利要求6所述的检测装置，其特征在于，第n所述采集单元位于第n所述膜区域上，且与第n所述膜区域电隔离。
  9. 根据权利要求6所述的检测装置，其特征在于，所述压板上具有对齐机构，所述对齐机构用于与所述导电膜与所述目标的预定位置对齐。
  10. 根据权利要求9所述的检测装置，其特征在于，所述对齐机构包括位于所述压板上的对齐标记；其中，所述对齐标记用于与所述目标的所述预定位置对齐；或者，
    所述对齐机构包括位于所述压板上的靠板；所述靠板位于所述导电膜的侧 面，所述靠板用于靠在所述目标的所述预定位置。
  11. 根据权利要求1至5任一项所述的检测装置，其特征在于，
    所述信号发生器为公共信号发生器，所述公共信号发生器用于向N个所述膜区域发射所述第一电磁信号；或者，
    第n所述膜区域对应于第n所述信号发生器，其中，所述第n信号发生器用于向第n所述膜区域发射所述第一电磁信号。
  12. 根据权利要求1至5任一项所述的检测装置，其特征在于，所述目标包括电芯壳体或者电池壳体；所述电芯壳体或电池壳体包括金属壳体及覆盖在所述金属壳体表面的绝缘层。
  13. 一种目标检测修复系统，其特征在于，包括：
    权利要求1至12任一项所述的检测装置；
    修复装置，与所述检测装置连接，所述修复装置用于接收所述检测装置输出的所述目标的所述绝缘层上所述预定缺陷的位置信息，并根据所述位置信息对消除所述预定缺陷。
  14. 根据权利要求13所述的系统，其特征在于，所述修复装置包括点胶装置，所述点胶装置用于根据所述预定缺陷的位置信息对所述绝缘层进行补胶。
PCT/CN2022/124617 2021-10-15 2022-10-11 检测装置及目标检测修复系统 WO2023061361A1 (zh)

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CN115830133B (zh) * 2022-08-03 2023-11-03 宁德时代新能源科技股份有限公司 相机标定方法、装置、计算机设备、存储介质和程序产品
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