WO2023058317A1 - Dispositif de traitement de substrat et procédé de traitement de substrat - Google Patents

Dispositif de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2023058317A1
WO2023058317A1 PCT/JP2022/030162 JP2022030162W WO2023058317A1 WO 2023058317 A1 WO2023058317 A1 WO 2023058317A1 JP 2022030162 W JP2022030162 W JP 2022030162W WO 2023058317 A1 WO2023058317 A1 WO 2023058317A1
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WIPO (PCT)
Prior art keywords
liquid
processing
substrate
concentration
cup
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PCT/JP2022/030162
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English (en)
Japanese (ja)
Inventor
至 菅野
光則 中森
洋介 八谷
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東京エレクトロン株式会社
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Publication of WO2023058317A1 publication Critical patent/WO2023058317A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the disclosed embodiments relate to a substrate processing apparatus and a substrate processing method.
  • the present disclosure provides a technology capable of accurately detecting the concentration of components contained in the processing liquid used for single-wafer processing of substrates.
  • a substrate processing apparatus includes a holding section, a liquid supply section, and an analysis section.
  • the holding unit holds and rotates the substrate.
  • the liquid supply unit supplies the processing liquid to the substrate.
  • the analysis section analyzes the treatment liquid. Further, the analysis section has a liquid receiving section and a concentration sensor.
  • the liquid receiver receives the processing liquid flowing out from the substrate.
  • a concentration sensor detects a concentration of a component contained in the processing liquid staying in the liquid receiving section.
  • FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing system according to an embodiment.
  • FIG. 2 is a schematic diagram illustrating an example of a specific configuration of a processing unit according to the embodiment; 3 is a diagram illustrating an example of a configuration of an analysis unit according to the embodiment;
  • FIG. 4 is a diagram illustrating an example of a configuration of an analysis unit according to Modification 1 of the embodiment;
  • FIG. 5 is a diagram illustrating an example of a configuration of an analysis unit according to Modification 2 of the embodiment; 6 is a diagram illustrating an example of a configuration of an analysis unit according to Modification 3 of the embodiment;
  • FIG. FIG. 7 is a schematic diagram illustrating an example of a specific configuration of a processing unit according to Modification 4 of the embodiment;
  • FIG. 8 is a schematic diagram illustrating an example of a specific configuration of a processing unit according to Modification 5 of the embodiment.
  • FIG. 9 is a schematic diagram illustrating an example of a specific configuration of a processing unit according to Modification 6 of the embodiment;
  • FIG. 10 is a schematic diagram illustrating an example of a specific configuration and operation of a processing unit according to Modification 7 of the embodiment;
  • FIG. 11 is a schematic diagram illustrating an example of a specific configuration and operation of a processing unit according to Modification 7 of the embodiment;
  • FIG. 12 is a schematic diagram illustrating an example of a specific configuration and operation of a processing unit according to Modification 7 of the embodiment;
  • 13 is a schematic diagram illustrating an example of a specific configuration of a processing unit according to Modification 8 of the embodiment;
  • FIG. 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to an embodiment.
  • a substrate processing system 1 is an example of a substrate processing apparatus.
  • the X-axis, Y-axis and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is defined as the vertically upward direction.
  • the substrate processing system 1 includes a loading/unloading station 2 and a processing station 3 .
  • the loading/unloading station 2 and the processing station 3 are provided adjacently.
  • the loading/unloading station 2 includes a hoop placement section 11 and a transport section 12 .
  • the transport section 12 is provided adjacent to the hoop mounting section 11 and includes a substrate transport device 13 and a transfer section 14 therein.
  • the substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. As shown in FIG. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can rotate around the vertical axis, and transfers the wafer W between the FOUP H and the transfer section 14 using the wafer holding mechanism. conduct.
  • the processing station 3 is provided adjacent to the transport section 12 .
  • the processing station 3 comprises a transport section 15 and a plurality of processing units 16 .
  • a plurality of processing units 16 are arranged side by side on both sides of the transport section 15 .
  • the transport unit 15 includes a substrate transport device 17 inside.
  • the substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. As shown in FIG.
  • the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can rotate about the vertical axis, and transfers the wafer W between the delivery section 14 and the processing unit 16 using a wafer holding mechanism. I do.
  • the processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .
  • the substrate processing system 1 also includes a control device 4 .
  • Control device 4 is, for example, a computer, and includes control unit 18 and storage unit 19 .
  • the storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1 .
  • the control unit 18 controls the operation of the substrate processing system 1 by reading and executing programs stored in the storage unit 19 .
  • the program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium.
  • Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnet optical disks (MO), and memory cards.
  • the substrate transfer device 13 of the loading/unloading station 2 takes out the wafer W from the FOUP H placed on the FOUP placing part 11, and receives the taken out wafer W. It is placed on the transfer section 14 .
  • the wafer W placed on the transfer section 14 is taken out from the transfer section 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16 .
  • the wafer W loaded into the processing unit 16 is processed by the processing unit 16, then unloaded from the processing unit 16 by the substrate transport device 17, and placed on the delivery section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the FOUP H of the FOUP placement section 11 by the substrate transfer device 13 .
  • FIG. 2 is a schematic diagram showing an example of a specific configuration of the processing unit 16.
  • the processing unit 16 includes a chamber 20, a substrate processing section 30, a liquid supply section 40, a collection cup 50, and an analysis section 60.
  • the processing unit 16 includes a chamber 20, a substrate processing section 30, a liquid supply section 40, a collection cup 50, and an analysis section 60.
  • the chamber 20 accommodates the substrate processing section 30 , the liquid supply section 40 , the recovery cup 50 and the analysis section 60 .
  • An FFU (Fan Filter Unit) 21 is provided on the ceiling of the chamber 20 .
  • FFU 21 forms a downflow in chamber 20 .
  • the substrate processing section 30 includes a holding section 31, a support section 32, and a driving section 33, and performs liquid processing on the placed wafer W.
  • the holding part 31 holds the wafer W horizontally.
  • the column portion 32 is a member extending in the vertical direction, the base end portion of which is rotatably supported by the drive portion 33, and the tip portion of which supports the holding portion 31 horizontally.
  • the drive section 33 rotates the support section 32 around the vertical axis.
  • the substrate processing section 30 rotates the supporting section 31 supported by the supporting section 32 by rotating the supporting section 32 using the driving section 33, thereby rotating the wafer W held by the supporting section 31. .
  • the holding part 31 horizontally holds the wafer W by sucking the lower surface of the wafer W, for example.
  • the holding portion 31 is not limited to the adsorption chuck, and may be an electrostatic chuck or the like.
  • the wafer W is held by the holder 31 with the surface on which substrate processing is performed directed upward.
  • the liquid supply unit 40 supplies the processing fluid to the wafer W.
  • the liquid supply unit 40 includes nozzles 41a and 41b, an arm 42a that horizontally supports the nozzles 41a and 41b, and a swing/lift mechanism 43a that swings and lifts the arm 42a.
  • the liquid supply unit 40 also includes a nozzle 41c, an arm 42b that horizontally supports the nozzle 41c, and a turning and lifting mechanism 43b that turns and lifts the arm 42b.
  • the nozzle 41a is connected to a DHF supply source 46a via a valve 44a and a flow regulator 45a.
  • the DHF supply source 46a is, for example, a tank that stores DHF (dilute hydrofluoric acid). Such DHF is an example of a treatment liquid.
  • the nozzle 41b is connected to an IPA supply source 46b via a valve 44b and a flow regulator 45b.
  • the IPA supply source 46b is, for example, a tank that stores IPA (IsoPropyl Alcohol). Such IPA is another example of a treatment liquid.
  • the nozzle 41c is connected to a DIW supply source 46c via a valve 44c and a flow regulator 45c.
  • the DIW supply source 46c is, for example, a tank that stores DIW (DeIonized Water). Such DIW is yet another example of a processing liquid.
  • DHF supplied from a DHF supply source 46a is discharged from the nozzle 41a.
  • IPA supplied from an IPA supply source 46b is discharged from the nozzle 41b.
  • DIW supplied from the DIW supply source 46c is discharged from the nozzle 41c.
  • the collection cup 50 is arranged to surround the holding portion 31 and collects the processing liquid S (see FIG. 3) scattered from the wafer W due to the rotation of the holding portion 31 .
  • a drain port 51 is formed at the bottom of the recovery cup 50 , and the processing liquid S collected by the recovery cup 50 is discharged to the outside of the processing unit 16 through the drain port 51 .
  • An exhaust port 52 is formed at the bottom of the collection cup 50 to discharge the gas supplied from the FFU 21 to the outside of the processing unit 16 .
  • the analysis unit 60 detects the concentration of components contained in the processing liquid S flowing out from the wafer W due to the rotation of the holding unit 31 .
  • the analysis unit 60 is arranged, for example, outside the edge of the wafer W and inside the recovery cup 50 . Also, the analysis unit 60 is arranged at a position lower than the wafer W held by the holding unit 31 .
  • FIG. 3 is a diagram showing an example of the configuration of the analysis unit 60 according to the embodiment.
  • the analysis unit 60 includes a liquid receiver 61 and a concentration sensor 62.
  • the liquid receiver 61 receives the processing liquid S flowing out from the wafer W (see FIG. 2) to be liquid-processed while rotating.
  • the concentration sensor 62 detects the concentration of components contained in the processing liquid S staying in the liquid receiving portion 61 .
  • the concentration sensor 62 detects the concentration of components contained in the treatment liquid S by infrared spectroscopy, for example.
  • the density sensor 62 has a light projecting portion 62a and a light receiving portion 62b.
  • the light projecting part 62a is connected to an infrared light source (not shown) by, for example, an optical fiber (not shown).
  • the light projecting part 62 a irradiates the light receiving part 62 b via the measured part 65 of the liquid receiving part 61 with the infrared light IR supplied from the infrared light source.
  • the light receiving section 62b is connected to a photometry section (not shown) by, for example, an optical fiber (not shown).
  • the light receiving portion 62b receives the infrared light IR irradiated from the light projecting portion 62a through the measured portion 65 of the liquid receiving portion 61, and sends the received light to the photometry portion.
  • the photometry unit splits the received infrared light IR and sends the data to the control unit 18 (see FIG. 1).
  • the control unit 18 can obtain the absorbance at a predetermined wavelength corresponding to the component to be measured from the absorption spectrum of the infrared light IR, and can calculate the concentration of the component.
  • the wavelength around 1460 (nm) is the overtone of the OH group stretching vibration
  • the wavelength around 1690 (nm) is the overtone of the CH group stretching vibration.
  • the absorbance A is represented by the following formula (1) according to the Beer-Lambert law.
  • A ⁇ LC (1)
  • the value of the concentration C can be obtained.
  • the distance L0 between the light projecting portion 62a and the light receiving portion 62b is the measurement length L, as shown in FIG.
  • the infrared light source of the concentration sensor 62 preferably emits infrared light IR in a continuous wavelength range. This makes it possible to detect the concentrations of many components simply by changing the settings of the control unit 18 .
  • the absorption peak wavelength may shift depending on the coexisting surrounding substances.
  • a commercially available one such as a halogen tungsten lamp can be used.
  • the infrared light IR generated by the infrared light source may have a single wavelength.
  • the infrared light source may be a wavelength tunable laser, or may selectively extract the absorption peak wavelength of the target component using an interference filter or the like.
  • an interference filter which is a bandpass filter, may be installed in the light projecting section 62a to irradiate infrared light IR of a desired wavelength.
  • the light projecting part 62a is preferably capable of projecting parallel rays using a collimator or the like, but may be capable of projecting light rays condensed on the light receiving part 62b in order to ensure the brightness of the optical system.
  • the photometry unit connected to the light receiving unit 62b splits the infrared light IR guided by the optical fiber from the light receiving unit 62b as necessary, detects it, converts it into an electric signal, and processes such as amplification as necessary. I do.
  • the structure of the photometry unit is not particularly limited, and a known one such as a dispersive spectrophotometer using a diffraction grating or the like, a non-dispersive spectrophotometer such as a Fourier transform infrared spectrophotometer, or the like can be used. Note that when the infrared light IR of a specific wavelength is projected from the light projecting section 62a, the spectroscopic means in the photometry section is unnecessary.
  • the control unit 18 calculates the absorption spectrum and absorbance at a predetermined wavelength based on the electrical signal from the photometry unit. In addition, the control unit 18 performs averaging processing by integrating the absorbance, or processing to suppress variation in measurement data by creating a frequency distribution within a unit time and obtaining a median value. After that, the control unit 18 performs density calculation and the like.
  • the wavelength range should include the wavelengths at which the component to be detected absorbs.
  • infrared light IR in a wavelength range including 1350 (nm) to 1720 (nm) is preferably irradiated.
  • the absorption peaks for measuring the concentration of H 2 O are not only near the wavelength 1460 (nm), but also near the wavelength 1200 (nm), the wavelength 1900 (nm), and the wavelength 2600 (nm). exist.
  • An absorption peak near a wavelength of 1200 (nm) has a small absorption coefficient, but absorption peaks near a wavelength of 1900 (nm) and a wavelength of 2600 (nm) have large absorption coefficients, so these absorption peaks may be used.
  • the liquid receiving portion 61 has an inlet 63 , an outlet 64 , and a portion 65 to be measured.
  • the processing liquid S flowing out from the wafer W flows into the inflow port 63 .
  • the discharge port 64 discharges the processing liquid S staying inside the liquid receiving portion 61 .
  • the outlet 64 is arranged at a position lower than the inlet 63 .
  • the measured portion 65 is a portion where the treatment liquid S is measured by the concentration sensor 62 . That is, the measured portion 65 is located between the light projecting portion 62a and the light receiving portion 62b, and is a portion through which the infrared light IR for measurement passes. The measured portion 65 is arranged at a position lower than the inlet 63 and higher than the outlet 64 .
  • the processing liquid S flowing out from the wafer W to be subjected to the liquid processing while rotating is once received by the liquid receiving section 61, and the concentration of the components contained in the processing liquid S is measured in the liquid receiving section 61. It is detected by the sensor 62 .
  • the measurement length L is sufficient to accurately detect the concentration of the component compared to the case where the liquid film of the processing liquid S formed on the wafer W is irradiated with infrared light to detect the concentration.
  • the concentrations of the components contained in the processing liquid S used for the single wafer processing of the wafers W can be detected with high accuracy.
  • the measurement length L is preferably 1 (mm) or more, and more preferably 10 (mm) or more.
  • the liquid receiver 61 has an inlet 63 at a position higher than the part 65 to be measured, and an outlet 64 at a position lower than the part 65 to be measured.
  • the processing liquid S received by the liquid receiving section 61 can always flow to the outside so as not to stagnate in the measurement target section 65 .
  • the sizes of the inlet 63 and the outlet 64 may be appropriately set so that the processing liquid S always stays in the measured portion 65 during the liquid processing of the wafer W. As a result, from the beginning to the end of the liquid processing of the wafer W, the passage of time in the component concentration of the processing liquid S can be continuously detected.
  • the substrate is first processed with DHF, then rinsed with DIW, and then dried with IPA.
  • the end point of the rinse treatment can be detected by detecting the concentration of DHF contained in the treatment liquid S with the analysis unit 60 . Furthermore, in the drying process using IPA, by detecting the concentration of DIW contained in the treatment liquid S, the end point of the drying process can be detected. That is, in the embodiment, extra time of liquid treatment can be saved.
  • the analysis unit 60 in the processing unit 16 by providing the analysis unit 60 in the processing unit 16, the overall processing time of the wafer W can be shortened, so that the wafer W can be efficiently processed with the liquid.
  • the liquid processing of the wafer W according to the embodiment is not limited to the above example, and any liquid processing in which two or more components are mixed in the processing liquid S can be applied.
  • Chemical solutions used for the liquid treatment of the wafer W according to the embodiment include, for example, HF (hydrofluoric acid), NH 4 OH (ammonia water), H 2 SO 4 (sulfuric acid), and H 2 O 2 (hydrogen peroxide solution). , HCl (hydrochloric acid), NH 4 F (ammonium fluoride), and the like.
  • HNO 3 nitric acid
  • H 3 PO 4 phosphoric acid
  • TMAH tetramethylammonium hydroxide
  • end point detection processing of the liquid processing according to the embodiment is not limited to the above example. End point detection may be performed.
  • components to be etched in the treatment liquid S include Si (silicon), Ti (titanium), W (tungsten), Ge (germanium), Ni (nickel), Co (cobalt), and Ru (ruthenium). etc.
  • the analyzing section 60 may be provided with a nozzle (not shown) for discharging a cleaning liquid (for example, DIW or the like) into the liquid receiving section 61 . Then, the controller 18 may discharge the cleaning liquid from the nozzle to clean the inside of the liquid receiving section 61 when the wafer W is not liquid-processed.
  • a cleaning liquid for example, DIW or the like
  • the concentration of the component contained in the processing liquid S used for the single wafer processing of the wafer W can be detected with higher accuracy.
  • control unit 18 may correct the sensitivity of infrared spectroscopic analysis during the cleaning process of the liquid receiving unit 61 described above. As a result, the concentrations of the components contained in the processing liquid S used for single-wafer processing of the wafers W can be detected more accurately.
  • the concentration sensor 62 capable of infrared spectroscopic analysis detects the concentration of the component contained in the treatment liquid S, but the present disclosure is not limited to this example.
  • the concentration sensor 62 can detect the processing liquid S flowing out from the wafer W by liquid chromatography mass spectrometry (LC/MS), gas chromatography mass spectrometry (GC/MS), ion chromatography (IC), or the like. You may detect the density
  • LC/MS liquid chromatography mass spectrometry
  • GC/MS gas chromatography mass spectrometry
  • IC ion chromatography
  • the concentration sensor 62 detects the concentration of the components contained in the processing liquid S flowing out from the wafer W by, for example, total organic carbon measurement (TOC) or plasma mass spectrometry (ICP-MS). good too.
  • TOC total organic carbon measurement
  • ICP-MS plasma mass spectrometry
  • the conductivity of the processing liquid S flowing out from the wafer W and staying in the liquid receiving portion 61 is measured by a conductivity meter, and the components contained in the processing liquid S are measured based on the measured conductivity. Concentration may be detected.
  • the concentration sensor 62 may include a conductivity meter. Also by this, the density
  • the analysis unit 60 detects the concentration of the component contained in the processing liquid S flowing out from the wafer W
  • the present disclosure is not limited to such an example.
  • the analysis unit 60 according to the embodiment may detect the amount of particles contained in the treatment liquid S received by the liquid receiving unit 61 with a particle sensor provided in the analysis unit 60 .
  • the end point of the liquid treatment is detected based on the measured value of the component concentration of the treatment liquid S detected by the analysis unit 60 (that is, the measured value of the component concentration is used as the trigger for the end of the liquid treatment). ), the disclosure is not limited to such examples.
  • the liquid processing execution time (step processing time) stored in various recipe information may be set based on the measured value of the component concentration of the processing liquid S detected by the analysis unit 60. .
  • the replacement state can be determined. A determination can be made as to whether or not the In this case, the determination of the component concentration of the treatment liquid S may be performed using pure water or IPA.
  • a low surface tension liquid for example, IPA
  • examples of the acidic treatment liquid include SPM (mixture of sulfuric acid and hydrogen peroxide).
  • examples of the alkaline processing liquid include SC1.
  • the operator or the like measures in advance the time required for the component concentration of the treatment liquid S detected by the analysis unit 60 to reach a given concentration. Then, after the component concentration of the treatment liquid S reaches the given concentration, without measuring the component concentration, the measured time until reaching the given concentration is added to the given fixed time. , is input to the recipe information as the execution time of the liquid treatment to be replaced with a different treatment liquid.
  • the component concentration of the processing liquid S is set to the given concentration If the concentration is higher than the concentration, an alarm to that effect may be output to the outside.
  • the determination may be made by measuring the concentration of the treatment liquid to be replaced, or by measuring the concentration of a different treatment liquid for replacement.
  • Conditions in which this alarm is generated include, for example, when some trouble occurs in the processing liquid supply valve executed in the processing recipe, and when some trouble occurs in the rotation control mechanism (for example, the drive unit 33, etc.). etc. can be considered.
  • control unit 18 when the above alarm is output, the control unit 18 removes the processing unit 16 to which the alarm is output from the transfer schedule for transferring the wafer W. Change the delivery schedule. Then, the control section 18 may transfer the unprocessed wafer W to the processing unit 16 capable of processing, and the processing unit 16 to which the alarm is output may perform control to stop the transfer.
  • control unit 18 executes a rescue recipe for the wafer W being processed in the processing unit 16 to which the alarm is output.
  • the wafer W should be rescued.
  • This rescue recipe is a setting for interrupting the step next to the replacement step that is executed for a predetermined delay time in order to extend the set execution time of the step that completes the replacement process. Then, the controller 18 determines whether or not to interrupt the rescue recipe based on the concentration measurement value at the end of the time for the replacement step.
  • the replacement process can be completed for the wafer W that is the target of the rescue recipe.
  • the time required for the complete replacement process obtained by preliminary test evaluation may be set.
  • FIG. 4 is a diagram showing an example of the configuration of the analysis unit 60 according to Modification 1 of the embodiment.
  • the analysis unit 60 according to Modification 1 differs from the above embodiment in the configuration of the concentration sensor 62 .
  • a density sensor 62 is used in which a light projecting portion 62a (see FIG. 3) and a light receiving portion 62b (see FIG. 3) are integrated.
  • a mirror 66 is provided on the opposite side of the measured portion 65 in the liquid receiving portion 61 so as to face the concentration sensor 62 .
  • the mirror 66 reflects the infrared light IR emitted from the density sensor 62 to the density sensor 62 .
  • the concentration of the components contained in the processing liquid S used for the single-wafer processing of the wafer W can be accurately determined. can be detected well.
  • the measurement length L which is twice the distance between the density sensor 62 and the mirror 66, can be taken. That is, in Modification 1, even if the size of the liquid receiving portion 61 is reduced, a sufficient measurement length L can be obtained.
  • the analysis section 60 can be installed without any problem.
  • FIG. 5 is a diagram showing an example of the configuration of the analysis unit 60 according to Modification 2 of the embodiment.
  • the analyzing section 60 according to Modification 2 differs from the above-described embodiment in the configuration of the liquid receiving section 61 .
  • a plurality of discharge ports 64 are provided at the bottom of the liquid receiving portion 61 .
  • the processing liquid S received by the liquid receiving portion 61 can be prevented from stagnation in the portion 65 to be measured, and can be made to flow to the outside more smoothly. Therefore, according to Modification 2, in the single-wafer processing of wafers W, it is possible to smoothly detect the passage of time in the component concentrations of the processing liquid S flowing out from the wafers W.
  • FIG. 1 In the single-wafer processing of wafers W, it is possible to smoothly detect the passage of time in the component concentrations of the processing liquid S flowing out from the wafers W.
  • FIG. 5 shows an example in which two discharge ports 64 are provided in the liquid receiving portion 61
  • the present disclosure is not limited to such an example, and three or more discharge ports 64 are provided in the liquid receiving portion 61.
  • FIG. 6 is a diagram showing an example of the configuration of the analysis unit 60 according to Modification 3 of the embodiment. As shown in FIG. 6, the analysis unit 60 according to Modification 3 differs from the above embodiment in the arrangement and configuration of the liquid receiver 61 . Specifically, in Modification 3, the liquid receiver 61 is provided outside the recovery cup 50 and integrated with the recovery cup 50 .
  • an opening 50b is formed in the side wall 50a of the collection cup 50, and the opening 50b and the inlet 63 of the liquid receiver 61 are connected.
  • a part of the side wall 50a is used to form a liquid receiver 61 outside the side wall 50a of the recovery cup 50. As shown in FIG.
  • a discharge channel 67 is connected to the discharge port 64 of the liquid receiver 61 , and the discharge channel 67 is connected to the discharge port 51 of the recovery cup 50 .
  • the concentration sensor 62 (see FIG. 3) of the processing liquid S remaining in the liquid receiving portion 61, the concentration of the processing liquid S contained in the processing liquid S used for the single-wafer processing of the wafer W can be detected.
  • the concentration of the component can be detected with high accuracy.
  • Modification 3 even in a processing unit 16 with no extra space in the collection cup 50, the analysis section 60 can be installed without any problem.
  • the liquid receiver 61 and the like may be configured to be detachable.
  • the opening 50b formed in the recovery cup 50 should be closed with a lid or the like when removing the liquid receiver 61 and the like.
  • FIG. 7 is a schematic diagram showing an example of a specific configuration of the processing unit 16 according to Modification 4 of the embodiment. As shown in FIG. 7, in modification 4, the arrangement of the analysis unit 60 is different from that in the above embodiment. Specifically, in Modification 4, the analysis unit 60 is provided in the discharge channel 53 connected to the discharge port 51 of the collection cup 50 instead of inside the collection cup 50 .
  • the treatment liquid S (see FIG. 3) that has been collected by the collection cup 50 and flowed out from the drain port 51 to the discharge channel 53 is received by the liquid receiver 61 (see FIG. 3). Furthermore, the concentration of the components contained in the treatment liquid S received by the liquid receiving portion 61 is detected by a concentration sensor 62 (see FIG. 3).
  • control unit 18 can accurately detect the concentration of the components contained in the processing liquid S used for the single-wafer processing of the wafers W.
  • Modification 4 even in a processing unit 16 with no extra space in the collection cup 50, the analysis section 60 can be installed without any problem.
  • FIG. 8 is a schematic diagram showing an example of a specific configuration of the processing unit 16 according to Modification 5 of the embodiment. As shown in FIG. 8, in modification 5, the arrangement and configuration of the analysis unit 60 are different from those of the above embodiment.
  • the liquid receiver 61 of the analysis unit 60 is provided in the discharge channel 53 connected to the drain port 51 of the recovery cup 50 instead of inside the recovery cup 50 .
  • a liquid sending pipe 68 is connected to the liquid receiving portion 61 .
  • the liquid feeding pipe 68 is connected to a measured portion 69 provided at a location different from the liquid receiving portion 61, and feeds the treatment liquid S received by the liquid receiving portion 61 from the liquid receiving portion 61 to the measured portion 69. . Then, the analysis unit 60 uses the concentration sensor 62 to detect the concentration of the components contained in the treatment liquid S sent to the measurement target unit 69 .
  • control unit 18 can accurately detect the concentration of the components contained in the processing liquid S used for the single-wafer processing of the wafers W.
  • Modification 5 even in a processing unit 16 in which there is no surplus space in the collection cup 50 and the surplus space around the discharge channel 53 is small, the analysis section 60 can be installed without any problem.
  • FIG. 9 is a schematic diagram showing an example of a specific configuration of the processing unit 16 according to Modification 6 of the embodiment. As shown in FIG. 9, in Modification 6, the arrangement of the liquid receiver 61 is different from that in Modification 5 described above.
  • the liquid receiver 61 of the analysis unit 60 is provided inside the collection cup 50 instead of the discharge channel 53 (see FIG. 8).
  • a liquid sending pipe 68 is connected to the liquid receiving portion 61 .
  • the liquid feeding pipe 68 is connected to a measured portion 69 provided at a location different from the liquid receiving portion 61, and feeds the treatment liquid S received by the liquid receiving portion 61 from the liquid receiving portion 61 to the measured portion 69. . Then, the analysis unit 60 uses the concentration sensor 62 to detect the concentration of the components contained in the treatment liquid S sent to the measurement target unit 69 .
  • control unit 18 can accurately detect the concentration of the components contained in the processing liquid S used for the single-wafer processing of the wafers W.
  • ⁇ Modification 7> 10 to 12 are schematic diagrams showing an example of the specific configuration and operation of the processing unit 16 according to Modification 7 of the embodiment. As shown in FIG. 10, in modification 7, the configuration of the collection cup 50 is different from that of the above embodiment.
  • the recovery cup 50 has a first recovery cup 80 , a second recovery cup 90 and a third recovery cup 100 .
  • the first recovery cup 80 is the outermost recovery cup
  • the third recovery cup 100 is the innermost recovery cup
  • the second recovery cup 90 is the first recovery cup 80 and the third recovery cup. This is a collection cup provided between the cup 100 and the cup 100 .
  • the second recovery cup 90 has an elevating cup 91 , a fixed cup 92 , an elevating rod 93 and an eaves portion 94 .
  • the elevating cup 91 has a cylindrical lower portion and a semi-conical upper portion that tapers inward as it goes upward.
  • the fixed cup 92 is a substantially cylindrical portion provided below the elevating cup 91 .
  • the fixed cup 92 and the elevating cup 91 form a cup body that receives the processing liquid S scattered from the rotating wafer W.
  • the elevating cup 91 and the fixed cup 92 are partially overlapped so that the cup body can be maintained even when the elevating cup 91 is raised.
  • the elevating rod 93 is provided below the elevating cup 91 so as to be embedded inside the fixed cup 92 .
  • the elevating rod 93 is connected to the elevating cup 91 by magnetic force, for example, and moves up and down integrally with the elevating cup 91 .
  • the eaves portion 94 is provided on the fixed cup 92 and covers from above the opening of the exhaust port 52 that is formed to penetrate inside the fixed cup 92 . As a result, it is possible to suppress the processing liquid S recovered in the recovery cup 50 from flowing into the exhaust port 52 .
  • the third collection cup 100 has an elevating cup 101 , a fixed cup 102 , an elevating rod 103 and an eaves portion 104 .
  • the elevating cup 101 has a cylindrical lower portion and a semi-conical upper portion that tapers inward as it goes upward.
  • the fixed cup 102 is a substantially cylindrical portion provided below the elevating cup 101 .
  • the fixed cup 102 and the elevating cup 101 form a cup body that receives the processing liquid S scattered from the rotating wafer W. As shown in FIG.
  • the elevating cup 101 and the fixed cup 102 are partially overlapped so that the cup body can be maintained even when the elevating cup 101 is raised.
  • the elevating rod 103 is provided below the elevating cup 101 so as to be embedded inside the fixed cup 102 .
  • the elevating rod 103 is connected to the elevating cup 101 by magnetic force, for example, and moves up and down integrally with the elevating cup 101 .
  • the eaves portion 104 is provided on the fixed cup 102 and covers from above the opening of the exhaust port 52 that is formed to penetrate inside the fixed cup 102 . Thereby, it is possible to suppress the processing liquid S recovered in the third recovery cup 100 from flowing into the exhaust port 52 .
  • the processing liquid S scattered from the rotating wafer W flows into the space G1 formed between the first recovery cup 80 and the second recovery cup 90 . Then, the treatment liquid S is discharged to the outside from a drain port 51A formed on the downstream side of the space G1.
  • the analysis section 60A is arranged in the space G1 formed between the first collection cup 80 and the second collection cup 90. Thereby, in liquid processing in which DHF is supplied to the wafer W from the nozzle 41a, the concentration of the component contained in the processing liquid S can be detected.
  • the treatment liquid S can be discharged to a liquid drain port different from the liquid drain port 51A.
  • the controller 18 moves the elevating cup 91 and the elevating rod 93 to a given elevated position.
  • the processing liquid S scattered from the rotating wafer W flows into the space G2 formed between the second recovery cup 90 and the third recovery cup 100 . Then, the treatment liquid S is discharged to the outside from a drain port 51B formed on the downstream side of the space G2.
  • the analysis section 60B is arranged in the space G2 formed between the second collection cup 90 and the third collection cup 100. Accordingly, in liquid processing in which DIW is supplied to the wafer W from the nozzle 41c, the concentration of the component contained in the processing liquid S can be detected.
  • the processing liquid S scattered from the rotating wafer W flows into the space G3 formed between the third recovery cup 100 and the inner wall portion 110 positioned inside the third recovery cup 100. Then, the treatment liquid S is discharged to the outside from a drain port 51C formed on the downstream side of the space G3.
  • the analysis section 60C is arranged in the space G3 formed between the third collection cup 100 and the inner wall section 110 . Thereby, in liquid processing in which IPA is supplied to the wafer W from the nozzle 41b, the concentration of the component contained in the processing liquid S can be detected.
  • the processing unit 16 has a plurality of recovery cups (here, the first recovery cup 80, the second recovery cup 90, and the third recovery cup) that receive the processing liquid S scattered from the wafer W. 100) provided.
  • a plurality of analysis units 60 are provided for each of these collection cups.
  • the processing unit 16 in which a plurality of recovery cups are provided for each of a plurality of types of chemical liquids, it is possible to detect the concentration of the components contained in the processing liquid S in all the liquid processing.
  • 10 to 12 are examples in which a plurality of analysis units 60 (analysis units 60A, 60B, 60C) are provided inside the first collection cup 80, the second collection cup 90, and the third collection cup 100, respectively. , the disclosure is not limited to such examples.
  • a plurality of analysis units 60 are provided downstream (i.e., discharge channels) of the drain ports 51A, 51B, and 51C connected to the first recovery cup 80, the second recovery cup 90, and the third recovery cup 100, respectively.
  • Analysis units 60A, 60B, 60C may be provided.
  • a plurality of liquid receivers 61 are provided inside the first recovery cup 80, the second recovery cup 90, and the third recovery cup 100, respectively. (that is, the same configuration as in the example of FIG. 9).
  • a plurality of liquid receivers 61 are provided downstream of the liquid drain ports 51A, 51B, and 51C, respectively, and the treatment liquid S is sent from each of the liquid receivers 61 to a measurement target 69 provided at a different location. (ie a configuration similar to the example of FIG. 8).
  • 10 to 12 show examples in which three recovery cups (first recovery cup 80, second recovery cup 90 and third recovery cup 100) are provided in one processing unit 16, The present disclosure is not limited to such examples. For example, two recovery cups may be provided within one processing unit 16, or four or more recovery cups may be provided within one processing unit 16.
  • FIG. 1 A first recovery cup 80, second recovery cup 90 and third recovery cup 100
  • FIG. 13 is a schematic diagram showing an example of a specific configuration of the processing unit 16 according to Modification 8 of the embodiment.
  • FIG. 13 in Modification 8, in addition to the analysis unit 60 described in the above embodiment, another concentration sensor 62A for detecting the component concentration of the processing liquid S (see FIG. 3) on the surface of the wafer W is provided. be provided.
  • the density sensor 62A is formed by integrating a light projecting section 62a (see FIG. 3) and a light receiving section 62b (see FIG. 3), and is arranged above the wafer W held by the holding section 31.
  • FIG. 3 Such density sensor 62A is supported by, for example, arm 42a or arm 42b (arm 42b in the figure).
  • the concentration sensor 62A detects the component concentration of the processing liquid S on the surface of the wafer W by reflecting the infrared light IR on the surface of the wafer W made of silicon.
  • the control unit 18 detects the component concentration detection result by the concentration sensor 62 (see FIG. 3) provided in the analysis unit 60 and the component concentration detection result by the concentration sensor 62A. Based on, it is preferable to determine the end point of the liquid treatment. This makes it possible to accurately determine the end point of liquid processing.
  • the substrate processing apparatus (substrate processing system 1) according to the embodiment includes a holding section 31, a liquid supply section 40, and an analysis section 60.
  • the holding unit 31 holds and rotates the substrate (wafer W).
  • the liquid supply unit 40 supplies the processing liquid S to the substrate (wafer W).
  • the analysis unit 60 analyzes the treatment liquid S.
  • the analysis section 60 also has a liquid receiving section 61 and a concentration sensor 62 .
  • the liquid receiver 61 receives the processing liquid S flowing out from the substrate (wafer W).
  • the concentration sensor 62 detects the concentration of components contained in the processing liquid S staying in the liquid receiving portion 61 . As a result, the concentrations of the components contained in the processing liquid S used for single-wafer processing of the wafers W can be accurately detected.
  • the liquid receiving portion 61 has an inlet 63, an outlet 64, and a portion 65 to be measured.
  • the processing liquid S flowing out from the substrate (wafer W) flows into the inflow port 63 .
  • the discharge port 64 is arranged at a position lower than the inflow port 63 and discharges the processing liquid S staying inside.
  • the measured portion 65 is arranged at a position lower than the inlet 63 and higher than the outlet 64 , and the processing liquid S is measured by the concentration sensor 62 .
  • the inflow port 63 and the discharge port 64 are arranged so that the processing liquid S always stays in the measured portion 65 during liquid processing of the substrate (wafer W). size is set. As a result, from the beginning to the end of the liquid processing of the wafer W, the passage of time in the component concentration of the processing liquid S can be continuously detected.
  • a plurality of discharge ports 64 are provided in the liquid receiver 61 .
  • the substrate processing apparatus (substrate processing system 1) according to the embodiment also includes a collection cup 50 that receives the processing liquid S scattered from the substrate (wafer W). Also, the liquid receiver 61 is provided outside the recovery cup 50 . As a result, even if the processing unit 16 has no extra space in the collection cup 50, the analysis section 60 can be installed without any problem.
  • the substrate processing apparatus (substrate processing system 1 ) according to the embodiment includes a holding section 31 , a liquid supply section 40 and an analysis section 60 .
  • the holding unit 31 holds and rotates the substrate (wafer W).
  • the liquid supply unit 40 supplies the processing liquid S to the substrate (wafer W).
  • the analysis unit 60 analyzes the treatment liquid S.
  • the analysis unit 60 also has a liquid receiver 61 , a liquid feed pipe 68 , and a concentration sensor 62 .
  • the liquid receiver 61 receives the processing liquid S flowing out from the substrate (wafer W).
  • the liquid feeding pipe 68 feeds the processing liquid S from the liquid receiving portion 61 to the measured portion 69 .
  • the concentration sensor 62 detects the concentration of the components contained in the treatment liquid S in the portion 69 to be measured. As a result, the concentrations of the components contained in the processing liquid S used for single-wafer processing of the wafers W can be accurately detected.
  • the substrate processing apparatus (substrate processing system 1) according to the embodiment also includes a collection cup 50 that receives the processing liquid S scattered from the substrate (wafer W). Further, the liquid receiver 61 is provided inside the recovery cup 50 . As a result, the concentrations of the components contained in the processing liquid S used for single-wafer processing of the wafers W can be accurately detected.
  • the substrate processing apparatus (substrate processing system 1) according to the embodiment includes a collection cup 50 for receiving the processing liquid S scattered from the substrate (wafer W), and a discharge channel 53 for discharging the processing liquid S from the collection cup 50. , provided. Also, the liquid receiver 61 is provided in the discharge flow path 53 . As a result, even if the processing unit 16 has no extra space in the collection cup 50, the analysis section 60 can be installed without any problem.
  • the substrate processing apparatus (substrate processing system 1) according to the embodiment includes a plurality of recovery cups (first recovery cup 80, second recovery cup 90, and third recovery cup 80) for receiving the processing liquid S scattered from the substrate (wafer W). cup 100).
  • a plurality of liquid receivers 61 are provided for each recovery cup (first recovery cup 80, second recovery cup 90, and third recovery cup 100).
  • the concentration sensor 62 detects the concentration of the component by infrared spectroscopy. As a result, the concentration of the component contained in the processing liquid S flowing out from the wafer W can be detected accurately and easily.
  • the concentration sensor 62 detects the concentration of the component using a conductivity meter. Thereby, the concentration of the component contained in the processing liquid S flowing out from the wafer W can be detected with high accuracy.
  • the substrate processing method according to the embodiment is configured such that, in the processing of replacing the processing liquid on the substrate (wafer W) with a different processing liquid, the set time of the processing is set by the concentration sensor. a decision process that determines based on the 62 measurements. As a result, the running cost of liquid processing can be reduced.
  • the substrate processing method includes determination processing and notification processing in the above-described substrate processing apparatus (substrate processing system 1).
  • determination process based on the measured value of the concentration sensor 62, it is determined whether or not the liquid processing has been completed normally.
  • the notification process outputs an alarm to the outside when the liquid process is not completed normally. Thereby, the liquid processing of the wafer W can be stably performed.
  • the substrate processing method according to the embodiment further includes a rescue process of rescuing the substrate (wafer W) that has been subject to the liquid processing using a rescue recipe when the liquid processing has not been completed normally.
  • a rescue process of rescuing the substrate (wafer W) that has been subject to the liquid processing using a rescue recipe when the liquid processing has not been completed normally whereby, the yield of the wafer W can be improved.
  • Substrate processing system (an example of a substrate processing apparatus) 16 processing unit 31 holding part 40 liquid supply part 50 recovery cup 53 discharge channel 60 analysis part 61 liquid receiving part 62 concentration sensor 63 inlet 64 outlet 65 part to be measured 68 liquid feeding pipe 69 part to be measured 80 first collection cup 90 Second collection cup 100 Third collection cup S Treatment liquid

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Abstract

Un dispositif de traitement de substrat selon un mode de réalisation de la présente invention comprend un support (31), une unité d'alimentation en liquide (40) et une unité d'analyse (60). Le support (31) maintient et fait tourner un substrat. L'unité d'alimentation en liquide (40) fournit un liquide de traitement (S) au substrat. L'unité d'analyse (60) analyse le liquide de traitement (S). De plus, l'unité d'analyse (60) comprend un récepteur de liquide (61) et un capteur de concentration (62). Le récepteur de liquide (61) reçoit le liquide de traitement (S) s'écoulant à partir du substrat. Le capteur de concentration (62) détecte la concentration de composants contenus dans le liquide de traitement (S) accumulés à l'intérieur du récepteur de liquide (61).
PCT/JP2022/030162 2021-10-08 2022-08-05 Dispositif de traitement de substrat et procédé de traitement de substrat WO2023058317A1 (fr)

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6211520A (ja) * 1985-07-10 1987-01-20 Hitachi Ltd 薬液調合方法
WO2001053803A1 (fr) * 2000-01-17 2001-07-26 Norihiro Kiuchi Procede de detection de concentrations dans un liquide et dispositif a cet effet
JP2005268498A (ja) * 2004-03-18 2005-09-29 Seiko Epson Corp レジスト溶解液モニタリング方法、半導体装置の製造方法、及びレジスト膜除去装置
JP2010021335A (ja) * 2008-07-10 2010-01-28 Shibaura Mechatronics Corp 基板処理装置および基板処理方法
JP2013038184A (ja) * 2011-08-05 2013-02-21 Tokyo Electron Ltd 液処理装置
JP2014120645A (ja) * 2012-12-18 2014-06-30 Dainippon Screen Mfg Co Ltd 基板処理装置及びその方法
JP2016143779A (ja) * 2015-02-03 2016-08-08 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
JP2019169648A (ja) * 2018-03-26 2019-10-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2020072135A (ja) * 2018-10-30 2020-05-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および排液管詰まり防止方法
JP2021072415A (ja) * 2019-11-01 2021-05-06 東京エレクトロン株式会社 基板処理装置および基板処理方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6211520A (ja) * 1985-07-10 1987-01-20 Hitachi Ltd 薬液調合方法
WO2001053803A1 (fr) * 2000-01-17 2001-07-26 Norihiro Kiuchi Procede de detection de concentrations dans un liquide et dispositif a cet effet
JP2005268498A (ja) * 2004-03-18 2005-09-29 Seiko Epson Corp レジスト溶解液モニタリング方法、半導体装置の製造方法、及びレジスト膜除去装置
JP2010021335A (ja) * 2008-07-10 2010-01-28 Shibaura Mechatronics Corp 基板処理装置および基板処理方法
JP2013038184A (ja) * 2011-08-05 2013-02-21 Tokyo Electron Ltd 液処理装置
JP2014120645A (ja) * 2012-12-18 2014-06-30 Dainippon Screen Mfg Co Ltd 基板処理装置及びその方法
JP2016143779A (ja) * 2015-02-03 2016-08-08 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
JP2019169648A (ja) * 2018-03-26 2019-10-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2020072135A (ja) * 2018-10-30 2020-05-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および排液管詰まり防止方法
JP2021072415A (ja) * 2019-11-01 2021-05-06 東京エレクトロン株式会社 基板処理装置および基板処理方法

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