WO2023058211A1 - 半導体モジュール及びその製造方法 - Google Patents
半導体モジュール及びその製造方法 Download PDFInfo
- Publication number
- WO2023058211A1 WO2023058211A1 PCT/JP2021/037277 JP2021037277W WO2023058211A1 WO 2023058211 A1 WO2023058211 A1 WO 2023058211A1 JP 2021037277 W JP2021037277 W JP 2021037277W WO 2023058211 A1 WO2023058211 A1 WO 2023058211A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- base plate
- connection
- semiconductor
- semiconductor module
- connection member
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 255
- 238000000034 method Methods 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000011347 resin Substances 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 27
- 238000002360 preparation method Methods 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
Definitions
- This application relates to a semiconductor module and its manufacturing method.
- a semiconductor module is made by mounting semiconductor switching elements on a base plate made of a conductive material, connecting electrode pads provided on the upper surfaces of a plurality of semiconductor switching elements with connecting members or bonding wires, and then encapsulating them with mold resin. (See, for example, Patent Document 1).
- a plurality of terminal portions such as positive and negative power supply terminals, output terminals for loads, and control terminals for controlling semiconductor switching elements are arranged on the outer peripheral side surface of the mold resin.
- a shunt resistor for current detection and the like are mounted inside the semiconductor module.
- the semiconductor switching element provided on the base plate and the base plate are connected by a connection member.
- a connection member With this configuration, when a circuit configuration in which one semiconductor switching element is removed from the semiconductor module is required, another base plate with a modified circuit configuration is required. Further, if the semiconductor switching elements to be removed are different, another base plate is required. Therefore, in the internal structure of the semiconductor module in Patent Document 1, there is a problem that the base plate cannot be shared because it is necessary to change the design accompanying the change of the base plate according to the change of the circuit configuration accompanying the deletion of the semiconductor switching element. In addition, since the base plate cannot be shared, a single semiconductor module is required, resulting in a problem of poor production efficiency.
- the object of the present application is to obtain a semiconductor module with improved productivity by sharing a base plate.
- a semiconductor module disclosed in the present application comprises a plurality of plate-shaped base plates, at least one semiconductor element bonded to one surface side of at least one of the base plates, and a conductive base plate.
- at least one connecting member which is composed of a member and connects between one surface sides of two or more of the base plates, wherein the plurality of base plates are arranged on the same plane with a gap therebetween, and the connecting member has one or both of a semiconductor element connecting portion which is a portion connected to the base plate through the semiconductor element and a base plate connecting portion which is a portion directly connected to the base plate.
- a method for manufacturing a semiconductor module disclosed in the present application includes a plurality of base plates made of conductive members, formed in plate shapes, and arranged on the same plane with a gap therebetween, at least one semiconductor element, and at least one base plate. a member preparing step of preparing a connecting member made of a conductive member; and between one surface sides of two or more of the base plates, the connecting member via the semiconductor element or not via the semiconductor element.
- a connecting step of connecting by means of a connecting method wherein the connecting step includes an indirect connecting method of connecting each of a plurality of connecting points between the base plate and the connecting member via the semiconductor element; a first connection step of connecting by either a direct connection method or a direct connection method, and connecting the plurality of connection points by a first setting pattern of the indirect connection method and the direct connection method; and and a second connection step of connecting with a second set pattern of the indirect connection method and the direct connection method, which are different from the first set pattern.
- a plurality of base plates, at least one semiconductor element bonded to one side of at least one base plate, and one side of two or more base plates are connected to each other. and at least one connecting member connected to the plurality of base plates, the plurality of base plates being arranged on the same plane with a gap therebetween, and the connecting member being a portion connected to the base plate via the semiconductor element connecting portion and Since it has one or both of the base plate connecting portions that are directly connected to the base plate, the base plate can be used even for semiconductor modules having different numbers of semiconductor elements that are connected to the base plate and connected to the connecting member. Can be shared. Since the base plate is used in common, the semiconductor module does not become a one-by-one semiconductor module, so the productivity of the semiconductor module can be improved.
- connection step of connecting in the step of preparing a member, one side of two or more base plates is connected by a connection member with or without a semiconductor element.
- a connection step of connecting wherein the connection step includes an indirect connection method of connecting each of a plurality of connection locations between the base plate and the connection member via a semiconductor element, and a direct connection method of directly connecting without the semiconductor element. and a first connection step of connecting a plurality of connection points by an indirect connection method and a first setting pattern of the direct connection method;
- the base plate can be shared. Since the base plate is used in common, the semiconductor module does not become a one-by-one semiconductor module, so the productivity of the semiconductor module can be improved.
- FIG. 1 is a diagram showing a circuit configuration of a device provided with a semiconductor module according to Embodiment 1;
- FIG. 1 is a plan view of a semiconductor module according to Embodiment 1;
- FIG. 4 is a plan view of another semiconductor module according to the first embodiment;
- FIG. 4 is a cross-sectional view of the semiconductor module taken along line AA in FIG. 3;
- FIG. 4 is a plan view of another connection member of the semiconductor module according to Embodiment 1;
- FIG. 4 is a plan view of another semiconductor module according to the first embodiment;
- FIG. 4 is a plan view of another connection member of the semiconductor module according to Embodiment 1;
- FIG. 4A and 4B are diagrams illustrating a connection member of the semiconductor module according to the first embodiment;
- FIG. 4 is a cross-sectional view of another connecting member of the semiconductor module according to Embodiment 1;
- FIG. 4 is a plan view of another semiconductor module according to the first embodiment;
- FIG. 4 is a side view of another semiconductor module according to Embodiment 1;
- FIG. 4A to 4C are diagrams showing a manufacturing process of the semiconductor module according to the first embodiment;
- FIG. 4
- FIG. 1 is a diagram showing the circuit configuration of the entire system of an electric power steering device 200 equipped with a semiconductor module 100 according to Embodiment 1
- FIG. 2 is a plan view showing the internal configuration of the semiconductor module 100
- FIG. 3 is an embodiment. 4 is a cross-sectional view of the semiconductor module 100 taken along line AA in FIG. 3, and
- FIG. 5 is a semiconductor module 101 according to the first embodiment.
- FIG. 7 is a plan view of another connection member 45c of the semiconductor module 101, and FIGS.
- FIG. 9 is a cross-sectional view of another connecting member 45c of the semiconductor module 101, cut at the same position as in FIG. 4,
- FIG. 10 is a plan view of another semiconductor module 102 according to the first embodiment
- FIG. 12 is a side view of another semiconductor module 102 shown in FIG. 10 as seen from the direction of arrow Y shown in FIG.
- the plan view of the semiconductor module is shown with the mold resin 70 removed, and the two-dot chain line indicates the outline of the mold resin 70 .
- the semiconductor module 100 is a module that is used in a device that performs power conversion, and that incorporates a semiconductor switching element that is a single or a plurality of semiconductor elements that perform power conversion.
- the electric power steering device 200 is a device that converts electric power supplied from the battery 9 and outputs the electric power to the motor 2 .
- the electric power steering device 200 comprises a control unit 1, a motor 2, a battery 9, an ignition switch 10, and sensors such as a rotation sensor 6, as shown in FIG.
- the motor 2 is a brushless motor having three-phase windings (U-phase, V-phase, and W-phase).
- the rotation sensor 6 is arranged near the motor 2 to detect the rotation angle of the motor 2 and output it to the control circuit 3 included in the control unit 1 .
- the sensor 8 includes a torque sensor for detecting steering wheel operating force, a vehicle speed sensor, and the like, and outputs an electric signal to the control circuit 3 according to the physical quantity detected by each sensor.
- the control unit 1 is composed of a control circuit 3 equipped with a CPU 30, an inverter circuit 4 that supplies current to the windings of the motor 2, a power relay 5, and other electrical components.
- the control unit 1 is connected to the battery 9 and the ignition switch 10 , and power is supplied to the control unit 1 via the battery 9 and the ignition switch 10 .
- the control unit 1 is connected to a rotation sensor 6 and a sensor 8 , and electrical signals output by these sensors are input to a control circuit 3 provided in the control unit 1 .
- the control circuit 3 is composed of a CPU 30, a drive circuit 31, an input circuit 32, and a power supply circuit 33 connected to these circuits. Output signals from the rotation sensor 6 and the sensor 8 are input to the input circuit 32 , and data such as rotation angle information of the motor 2 obtained from these output signals is output to the CPU 30 .
- the CPU 30 calculates a current value for rotating the motor 2 from the input data.
- the CPU 30 outputs to the inverter circuit 4 a control signal corresponding to the result of calculation via the drive circuit 31 .
- a current detection signal detected by the inverter circuit 4 is input to the CPU 30 via the input circuit 32, and the CPU 30 performs feedback control of the inverter circuit 4 based on this current detection signal.
- the inverter circuit 4 is composed of a bridge circuit corresponding to each of the U-phase, V-phase, and W-phase windings of the motor 2 . Since the bridge circuits corresponding to the respective phases are all the same circuit, the bridge circuit 4a of one phase (U phase) will be explained.
- the bridge circuit 4a includes three semiconductor switching elements 41, 42, 44.
- the semiconductor switching element 41 on the high potential side and the semiconductor switching element 42 on the low potential side are connected in series.
- One side of semiconductor switching element 44 is connected to an intermediate connection portion between semiconductor switching elements 41 and 42 , and the other side of semiconductor switching element 44 is connected to the U-phase coil of motor 2 .
- the semiconductor switching element 44 has a relay function capable of connecting or disconnecting the U-phase coil and the inverter circuit 4 .
- a shunt resistor 43 for detecting current is connected downstream of the semiconductor switching element 42 on the low potential side. A potential difference across the shunt resistor 43 is detected and converted into a current value.
- the inverter circuit 4 is provided with terminals 48 across the shunt resistor 43 . Monitor signals at various points of the inverter circuit 4 are input to the CPU 30 via the input circuit 32 . Driving of the semiconductor switching elements 41 , 42 , 44 is controlled based on signals output from the drive circuit 31 according to commands from the CPU 30 .
- the power relay 5 is arranged upstream of the inverter circuit 4 .
- the power relay 5 includes two semiconductor switching elements 5a and 5b connected in series.
- the power relay 5 has a relay function capable of supplying or cutting off power to the inverter circuit 4 .
- a smoothing capacitor 7 is connected in parallel between the power supplied to the inverter circuit 4 and the ground.
- control unit 1 uses a semiconductor module containing one or more semiconductor switching elements.
- a semiconductor module containing one or more semiconductor switching elements is a semiconductor module containing a bridge circuit forming the inverter circuit 4, a semiconductor module containing the power relay 5, or a semiconductor module containing a circuit in which a part of the shunt resistor and the semiconductor switching element is omitted.
- the semiconductor module 100 includes a plurality of plate-shaped base plates 50 , control terminals 80 , and at least one semiconductor element bonded to one surface of at least one base plate 50 . It comprises a certain semiconductor switching element and at least one connection member 45 connecting between one surface sides of two or more base plates 50 .
- Base plate 50 and control terminals 80 are conductive members made of the same material such as copper or copper alloy.
- the base plate 50 and the control terminals 80 are arranged side by side on the same plane with a gap therebetween.
- five base plates 50 and four control terminals 80 are provided.
- Two connection members 45 are provided.
- the semiconductor module 100 shown in FIG. 2 has three semiconductor switching elements 41 , 42 , 44 and a shunt resistor 43 .
- the semiconductor switching elements 41, 42, and 44 here are FETs (Field Effect Transistors).
- the semiconductor elements bonded to the base plate 50 are not limited to semiconductor switching elements.
- the high-potential-side semiconductor switching element 41 is joined to one surface of the base plate 50 a at the drain portion of the semiconductor switching element 41 .
- the semiconductor switching element 42 on the low potential side is joined to one surface of the base plate 50 c at the drain portion of the semiconductor switching element 42 .
- the semiconductor switching element 44 is joined to one surface of the base plate 50 b at the drain portion of the semiconductor switching element 44 .
- the shunt resistor 43 is joined across one surface of the base plate 50d and the base plate 50e.
- Each base plate 50 has a terminal portion 51 exposed to the outside from the side surface of the mold resin 70 .
- the direction in which the terminal portions 51 are exposed is parallel to the same plane on which the base plate 50 is provided.
- a terminal portion 51a of the base plate 50a is connected to the battery 9 as a power source.
- a terminal portion 51e of the base plate 50e is connected to the ground.
- a terminal portion 51b of the base plate 50b is connected to the U phase of the motor 2 as a load, and the electric power converted from the terminal portion 51b is output to the U phase of the motor 2.
- the terminal portions 51a, 51b, and 51e are power terminals for large currents.
- the terminal portion 51a and the terminal portion 51e are arranged side by side on the right side of the semiconductor module 100 in FIG.
- the terminal portion 51b is provided to extend upward from the semiconductor module 100 in FIG.
- the base plate 50d and the base plate 50e have a terminal portion 51d and a terminal portion 51e1 for detecting the voltage across the shunt resistor 43, respectively.
- the terminal portion 51e and the terminal portion 51e1 are at ground potential.
- the base plate 50c includes terminal portions 51c connected to connection points of the semiconductor switching elements 41, 42, and 44. As shown in FIG.
- the terminal portion 51c is a terminal for monitoring the potential of the connection point of the semiconductor switching elements 41, 42 and 44.
- Each of the plate-shaped control terminals 80 has a terminal portion 81 exposed to the outside from the side surface of the mold resin 70 .
- the direction in which the terminal portion 81 is exposed is parallel to the same plane on which the control terminal 80 is provided.
- the control terminal 80 receives a relatively small amount of current and is a terminal used for controlling the semiconductor module 100 .
- the control terminals 80 are arranged side by side under the semiconductor module 100 in FIG.
- the control terminals 80a, 80b, 80c are gate control terminals connected to the gates of the semiconductor switching elements 41, 42, 44, respectively.
- the control terminals 80a, 80b, 80c and each gate portion are connected by bonding wires 46 provided by a wire bonding process.
- Wire bonding is performed starting from the gate portions of the semiconductor switching elements 41, 42, and 44 and ending at the control terminal 80 side. Therefore, the bonding wire 46 can be cut without damaging the semiconductor switching elements 41, 42, 44 in the wire bonding process.
- a bonding wire 47 connects the control terminal 80d and the base plate 50b.
- the control terminal 80 d is a terminal for monitoring the potential of the terminal portion 51 b that is output to the motor 2 .
- the mold resin 70 seals the base plate 50, the control terminal 80, the semiconductor switching elements 41, 42, 44, the shunt resistor 43, the connection member 45, and the bonding wires 46, 47.
- Mold resin 70 is shaped like a rectangular plate having a plate surface parallel to the same plane on which base plate 50 is provided. The other surface of the base plate 50 may be exposed from the mold resin 70 in order to cool the base plate 50 easily.
- Semiconductor module 100 has three semiconductor switching elements 41 , 42 , 44 , whereas semiconductor module 101 has only one semiconductor switching element 42 .
- the semiconductor modules 100 and 101 each have the same base plate 50 , and the base plate 50 is shared by the semiconductor modules 100 and 101 .
- the semiconductor module 100 has two connection members 45a and 45b, and the semiconductor module 101 has two connection members 45c and 45b. Since the semiconductor module 100 has the connection member 45 a and the semiconductor module 101 has the connection member 45 c, the base plate 50 is shared between the semiconductor modules 100 and 101 .
- the details of the connection member 45 which is the main part of the present application, will be described below.
- connection member 45 has one or both of a semiconductor element connection portion which is a portion connected to the base plate 50 via a semiconductor switching element and a base plate connection portion which is a portion directly connected to the base plate 50 .
- the connection member 45 is made of, for example, a copper plate and formed in a bridge shape.
- the connection member 45a shown in FIG. 2 connects the source portion of the semiconductor switching element 41, the source portion of the semiconductor switching element 44, and the base plate 50c.
- the connecting member 45a has two semiconductor element connecting portions and one base plate connecting portion.
- the connection member 45b connects the source portion of the semiconductor switching element 42 and the base plate 50d.
- the connecting member 45b has one semiconductor element connecting portion and one base plate connecting portion.
- connection member 45c connects the base plate 50a, the base plate 50b, and the base plate 50c.
- the connection member 45c has three base plate connections. Even in a semiconductor module having a different number of semiconductor switching elements joined to the base plate 50 and connected to the connection member 45, the connection member 45c has three base plate connection portions, so that the base plate 50 can be shared and different circuit patterns can be used. can be formed. In addition, since the base plate 50 is shared, the semiconductor module is not manufactured one by one, so the productivity of the semiconductor module can be improved.
- the semiconductor module 100 has three semiconductor switching elements 41, 42, and 44, and the connecting member 45a has two semiconductor element connecting portions and one base plate connecting portion.
- the base plate 50 can be shared by forming the connecting member 45a into a shape having one semiconductor element connecting portion and two base plate connecting portions.
- the connection member 45 may have only the semiconductor element connection portion depending on the circuit pattern.
- connection member 45 and the semiconductor switching element are connected by soldering, for example.
- the connecting member 45 and the base plate 50 are connected by soldering, for example.
- the connection member 45 has a through hole 61 penetrating in the normal direction of one surface of the base plate 50 at the center of each of the semiconductor element connection portion and the base plate connection portion.
- the portion of the connection member 45c connected between the two base plates 50 has a surface opposite to the side of the base plate 50 parallel to one surface of the base plate 50. It has a flat portion 62 spaced from one side of 50 .
- the surface 62 a of the flat portion 62 parallel to one surface of the base plate 50 can be used in a jig or the like used when assembling the semiconductor modules 100 and 101 . Since the parallel surfaces 62a can be used when assembling the semiconductor modules 100 and 101, the productivity of the semiconductor modules 100 and 101 can be improved.
- connection member 45c may be formed in a plate shape, and the width of the flat portion 62 may be larger than the width of the semiconductor element connection portion and the width of the base plate connection portion.
- the parallel surfaces 62a used when assembling the semiconductor modules 100 and 101 are enlarged, so that the parallel surfaces 62a are easy to use during assembly, and the position of the connection member 45c is stabilized during assembly. be able to. Since the position of the connection member 45c is stabilized during assembly, the productivity of the semiconductor modules 100 and 101 can be improved.
- the plurality of through holes 61 are arranged side by side in one direction, and the connection member 45 extends in the direction in which the plurality of through holes 61 are arranged.
- the connection member 45 is formed in a simple shape that is not complicated, so the yield of the connection member 45 can be improved.
- the plurality of through holes 61 are arranged side by side in one direction, the distance between the connecting members 45 can be shortened.
- connection member 45a when viewed in a direction perpendicular to one surface of the base plate 50, the connection member 45a is formed symmetrically with respect to a straight line (the center line 60 in FIG. 2) connecting the centers of the plurality of through holes 61. ing.
- the connecting member 45a can be easily balanced during assembly, and thus positional displacement of the connecting member 45a can be suppressed.
- the productivity of the semiconductor modules 100 and 101 can be improved because the misalignment of the connection members 45a is suppressed.
- FIG. 6 is a diagram showing, together with the semiconductor module 101, another semiconductor module 101a configured in a mirror-symmetrical shape with respect to the other semiconductor module 101 shown in FIG.
- the plurality of through holes 61 are arranged side by side in one direction, and the connection member 45c extends in the direction in which the plurality of through holes 61 are arranged. Even if the shape is symmetrical, the connection member 45c can be used in common by mounting the connection member 45c mirror-symmetrically.
- connection member 45 when the through holes 61 of the connection member 45 are arranged in one direction, the position of the connection member 45 can be stabilized when the connection member 45 is mounted in the manufacturing equipment during assembly of the semiconductor module. . If the through-holes 61 are not aligned in one direction, the connecting member 45 cannot be formed linearly, and the connecting member 45 has a bent shape. If the shape of the connection member 45 is bent, the connection member 45 is likely to rotate due to air resistance when the connection member 45 is mounted. Therefore, the bent connection member 45 becomes unstable in position when it is mounted. If the through-holes 61 are arranged in one direction, the connection member 45 can be formed in a straight line, so that the air resistance received by the connection member 45 becomes uniform, so that the position of the connection member 45 during mounting can be stabilized. can be done.
- the plurality of through-holes 61 are arranged in one direction, and the connection member 45c extends in the direction in which the plurality of through-holes 61 are arranged and extends in a direction perpendicular to one surface of the base plate 50.
- the connecting member 45c is formed asymmetrically with respect to an axis 63 perpendicular to the extending direction of the connecting member 45c in the through-hole 61 arranged in the center of the plurality of through-holes 61 .
- the connection member 45c shown in FIG. 7 is formed asymmetrically by changing the sizes of the flat portions 62 provided on the right and left sides of the shaft 63, respectively.
- the configuration of forming the connecting member 45c asymmetrically is not limited to this, and the connecting member 45c may be formed asymmetrically by changing the size of the semiconductor element connecting portion or the base plate connecting portion of the connecting member 45c. . By configuring in this way, it is possible to prevent the connecting member 45c from being horizontally reversed and connected during assembly.
- the connecting member 45c has at least two flat portions 62, and the heights from one surface of the base plate 50 to the two flat portions 62 are different.
- One surface of the base plate 50 is the portion indicated by the dashed line in FIG. FIG. 8 shows an example in which the connecting member 45c has two flat portions 62.
- the surfaces 62a of the two flat portions 62 parallel to one surface of the base plate 50 can be used at the same time. By utilizing two parallel surfaces 62a simultaneously, the position of connecting member 45c can be further stabilized during assembly.
- connection member 45c is placed upside down during assembly, the heights of the two flat portions 62 are different. Since a gap is generated between them, the jig 90 cannot hold the connection member 45c. Since the connecting member 45c cannot be held by the jig 90, it is possible to prevent the connecting member 45c from being arranged at an abnormal position. Since the connection member 45c is prevented from being arranged abnormally, the productivity of the semiconductor modules 100 and 101 can be improved.
- connection member 45 is formed in a plate shape
- the shape of the connection member 45 is not limited to a plate shape.
- the surface of the connection member 45c opposite to the side of the base plate 50 is parallel to one surface of the base plate 50, and the connection portion of the connection member 45c with the base plate 50 is aligned with the base plate 50.
- a three-dimensional shape that protrudes to the side of is also acceptable. Since the surface 62a parallel to one surface of the base plate 50 is enlarged, the parallel surface 62a can be easily used during assembly, and the position of the connecting member 45c can be stabilized during assembly. Further, by forming the connection member 45c in a three-dimensional shape instead of a plate shape, the volume of the connection member 45c can be increased, so that the rigidity of the connection member 45c can be increased.
- the semiconductor module 102 shown in FIG. 10 has a configuration in which two semiconductor modules arranged mirror-symmetrically are sealed with a mold resin 70 .
- the outer shape of the mold resin 70 is provided in a rectangular shape having long sides and short sides, and the connection member 45c extends in a direction parallel to the long side direction of the mold resin 70.
- the long sides are formed in the horizontal direction of the drawing, and the short sides are formed in the vertical direction of the drawing.
- the connection member 45c is arranged so as to extend in the horizontal direction of the figure.
- the mold resin 70 When the external shape of the mold resin 70 is a rectangle having long sides and short sides when viewed in a direction perpendicular to one surface of the base plate 50, the mold resin 70 is shaped such that the long sides Warpage may occur along the
- the dashed-dotted line shown in FIG. 11 indicates an example of the direction in which the mold resin 70 warps. If the molding resin 70 is warped, the tip positions of the terminals may be displaced due to the warp. Therefore, it is important to suppress the occurrence of the warp.
- the connection member 45c extends in a direction parallel to the long side direction of the mold resin 70, warping can be suppressed.
- the connection member 45c When the connection member 45c is provided in the shape shown in FIG. 9, the rigidity of the connection member 45c is high, so that the occurrence of warping can be further suppressed.
- a method for manufacturing the semiconductor module 100 will be described with reference to FIG.
- the semiconductor module 100 is manufactured through a member preparation step (S11), a connection step (S12), a wire bonding step (S13), and a sealing step (S14).
- S11 member preparation step
- S12 connection step
- S13 wire bonding step
- S14 sealing step
- each step of the method for manufacturing the semiconductor module 100 shown in FIG. 2 will be mainly described below, the method for manufacturing the semiconductor modules 101 and 102, which are other semiconductor modules, is the same.
- a plurality of base plates 50 made of a conductive member, formed in a plate shape, and arranged on the same plane with a gap therebetween, at least one semiconductor element, and a connection made up of at least one conductive member. It is a step of preparing the member 45 .
- the semiconductor module 100 five base plates 50, three semiconductor switching elements 41, 42 and 43, and two connection members 45a and 45b are prepared.
- the semiconductor module 100 prepares four control terminals 80 and a shunt resistor 43 .
- the four control terminals 80 are arranged on the same plane with gaps therebetween along with the five base plates 50 .
- the connecting step is a step of connecting between one surface sides of two or more base plates 50 by connecting members 45 with or without semiconductor switching elements.
- each of the plurality of connection points between the base plate 50 and the connection member 45 is connected through a semiconductor switching element bonded to the base plate 50 via an indirect connection method, or directly connected without a semiconductor switching element. Connect with any of the connection methods. Therefore, in the connection step, a first connection step of connecting a plurality of connection points by an indirect connection method and a first set pattern of the direct connection method, and a first connection step of connecting the plurality of connection points by an indirect connection method different from the first set pattern and a second connection step of connecting with a second set pattern of the direct connection method.
- the first connection process is executed with the first setting pattern.
- the first setting pattern the three connection points of the connection member 45a are connected by two indirect connection methods and one direct connection method, and the two plurality of connection points of the connection member 45b are connected by one indirect connection method and one direct connection method. It is a pattern to connect with the connection method.
- the second connection step is performed with the second setting pattern.
- the second setting pattern is a pattern in which the three connection points of the connection member 45c are connected by three direct connection methods, and the two plurality of connection points of the connection member 45b are connected by one indirect connection method and one direct connection method. is.
- the connection members 45a and 45b are prepared in the member preparation process, and in the semiconductor module 101, the connection members 45c and 45b are prepared in the member preparation process.
- the semiconductor element connecting portion of the connecting member 45a and the semiconductor switching element 41, the semiconductor element connecting portion of the connecting member 45a and the semiconductor switching element 44, and the base plate connecting portion of the connecting member 45a and the base plate 50c are connected.
- the semiconductor element connecting portion of the connecting member 45b and the semiconductor switching element 42, and the base plate connecting portion of the connecting member 45b and the base plate 50d are connected.
- the base plate connection portion of the connection member 45c and the base plate 50a, the base plate connection portion of the connection member 45c and the base plate 50b, and the base plate connection portion of the connection member 45c and the base plate 50c are connected, respectively, and the semiconductor of the connection member 45b is connected.
- the element connecting portion is connected to the semiconductor switching element 42, and the base plate connecting portion of the connecting member 45b is connected to the base plate 50d. Also, in the semiconductor module 100, the shunt resistor 43 is joined to the base plates 50d and 50e in the connecting step.
- the base plate 50 can be used in common even for semiconductor modules having different numbers of semiconductor elements joined to the base plate 50 and connected to the connection members 45 . Since the base plate 50 is used in common, the semiconductor module does not become a one-by-one semiconductor module, so the productivity of the semiconductor module can be improved.
- the wire bonding process is a process of connecting the control terminal 80 and the semiconductor switching element or base plate with a bonding wire.
- control terminals 80 a , 80 b , 80 c and gate portions of semiconductor switching elements 41 , 42 , 44 are connected by bonding wires 46 .
- a bonding wire 47 connects the control terminal 80d and the base plate 50b.
- the sealing step is a step of sealing the base plate 50, the control terminal 80, the semiconductor switching elements 41, 42, 44, the shunt resistor 43, the connection member 45, and the bonding wires 46, 47 with the molding resin 70. is. After the sealing process, the terminal portion 51 of the base plate 50 and the terminal portion 81 of the control terminal 80 are exposed to the outside from the side surface of the mold resin 70 .
- the semiconductor module 100 includes a plurality of plate-shaped base plates 50, at least one semiconductor element bonded to one surface side of at least one base plate 50, two and at least one connection member 45 connecting between one surface sides of the two or more base plates 50, the plurality of base plates 50 being arranged on the same plane with a gap therebetween, and the connection member 45 being the semiconductor element. Since it has one or both of the semiconductor element connection portion which is the portion connected to the base plate 50 via the base plate 50 and the base plate connection portion which is the portion directly connected to the base plate 50, it is joined to the base plate 50 and the connection member
- the base plate 50 can be used in common even for semiconductor modules having different numbers of semiconductor elements connected to the base plate 45 . Since the base plate 50 is used in common, the semiconductor module does not become a one-by-one semiconductor module, so the productivity of the semiconductor module can be improved.
- connection member connected between the two base plates 50 has a surface opposite to the base plate 50 side parallel to one surface of the base plate 50 and spaced apart from the one surface of the base plate 50 .
- the surface 62a of the flat portion 62 parallel to one surface of the base plate 50 can be used in a jig or the like used when the semiconductor module 100 is assembled. productivity can be improved.
- connection member 45c When the connection member 45c is formed in a plate shape and the width of the flat portion 62 is formed to be larger than the width of the semiconductor element connection portion and the width of the base plate connection portion, the parallel surfaces 62a used when assembling the semiconductor module 100 are formed. Since it is enlarged, the parallel surfaces 62a can be easily used during assembly, and the position of the connecting member 45 can be stabilized during assembly.
- the connecting member 45c has at least two flat portions 62 and the two flat portions 62 have different heights from one surface of the base plate 50, the connecting member 45c is placed upside down during assembly. At this time, since a gap is generated between the jig 90 and the flat portion 62, the connecting member 45c cannot be held by the jig 90, so that the connecting member 45c can be prevented from being arranged at an abnormal position. Further, if the connection member 45 has a through hole 61 penetrating in the normal direction of one surface of the base plate 50 at the center of each of the semiconductor element connection portion and the base plate connection portion, when the connection member 45 is connected , solder can be applied to the side to be connected to reduce solder voids that may occur when the connecting member 45 is connected.
- a plurality of through holes 61 are provided side by side in one direction, and connecting members 45a extend in the direction in which the plurality of through holes 61 are arranged.
- the connection member 45a When formed symmetrically with respect to a straight line connecting the centers of the plurality of through holes 61, the connection member 45a can be easily balanced during assembly, and positional deviation of the connection member 45a can be suppressed. can.
- connection member 45c extends in the direction in which the plurality of through holes 61 are arranged, and when viewed in a direction perpendicular to one surface of the base plate 50, a plurality of If the connecting member 45c is formed asymmetrically with respect to the axis 63 that is perpendicular to the extension direction of the connecting member 45c in the through hole 61 arranged in the center of the through hole 61, the connecting member 45c can be moved left and right during assembly. Inverted connection can be prevented.
- a mold resin 70 sealing a plurality of base plates 50, semiconductor switching elements, and connection members 45 is provided.
- the outer shape of the mold resin 70 has long sides and short sides.
- the connection member 45 is provided in a rectangular shape and extends in a direction parallel to the long side direction of the mold resin 70, it is possible to suppress warpage that occurs along the long side of the mold resin 70 during molding. .
- connection member 45c opposite to the base plate 50 side When the surface of the connection member 45c opposite to the base plate 50 side is parallel to one surface of the base plate 50, and the connection portion of the connection member 45c with the base plate 50 protrudes toward the base plate 50 side. Since the surface 62a parallel to one surface of the base plate 50 is enlarged, the parallel surface 62a can be easily used during assembly, and the position of the connecting member 45c can be stabilized during assembly. Further, by forming the connection member 45c in a three-dimensional shape instead of a plate shape, the volume of the connection member 45c can be increased, so that the rigidity of the connection member 45c can be increased.
- the manufacturing method of the semiconductor module 100 includes a step of preparing a member and a connection between one surface sides of two or more base plates 50 via a semiconductor switching element or not via a semiconductor switching element. a connecting step of connecting with a member 45, wherein the connecting step includes an indirect connection method of connecting each of a plurality of connection points between the base plate 50 and the connecting member 45 via a semiconductor switching element, and a method of connecting not via a semiconductor switching element.
- a first connection step of connecting a plurality of connection points by a first setting pattern of the indirect connection method and the direct connection method, and connecting the plurality of connection points to the first The number of semiconductor switching elements joined to the base plate 50 and connected to the connection member 45 in order to perform a second connection step of connecting in a second set pattern of the indirect connection method and the direct connection method different from the set pattern
- the base plate 50 can be used in common for semiconductor modules having different . Since the base plate 50 is used in common, the semiconductor module does not become a one-by-one semiconductor module, so the productivity of the semiconductor module can be improved.
- control unit 2 motor 3 control circuit 4 inverter circuit 4a bridge circuit 5 power supply relay 5a semiconductor switching element 5b semiconductor switching element 6 rotation sensor 7 capacitor 8 sensor 9 battery 10 ignition switch 30
- drive circuit 32 input circuit 33 power supply circuit 41 semiconductor switching element 42 semiconductor switching element 43 shunt resistor 44 semiconductor switching element , 45 connection member, 46 bonding wire, 47 bonding wire, 48 terminal, 50 base plate, 51 terminal portion, 60 center line, 61 through hole, 62 flat portion, 62a parallel surface, 63 axis, 70 mold resin, 80 control terminal , 81 terminal portion, 90 jig, 100 semiconductor module, 101 semiconductor module, 102 semiconductor module, 200 electric power steering device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
Description
図1は実施の形態1に係る半導体モジュール100を備えた電動パワーステアリング装置200のシステム全体の回路構成を示す図、図2は半導体モジュール100の内部構成を示す平面図、図3は実施の形態1に係る別の半導体モジュール101の内部構成を示す側面図、図4は図3のA-A断面位置で切断した半導体モジュール100の断面図、図5は実施の形態1に係る半導体モジュール101の別の接続部材45cの平面図である。図6は実施の形態1に係る別の半導体モジュール101aの平面図、図7は半導体モジュール101の別の接続部材45cの平面図、図8は半導体モジュール101の接続部材45cを説明する図、図9は半導体モジュール101の別の接続部材45cの断面図で、図4と同等の位置で切断した図、図10は実施の形態1に係る別の半導体モジュール102の平面図、図11は図10に示した別の半導体モジュール102の側面図で、図10に示した矢印Yの方向から見た図、図12は半導体モジュール100の製造工程を示す図である。半導体モジュールの平面図はモールド樹脂70を取り除いて示した図で、二点鎖線はモールド樹脂70の外形である。半導体モジュール100は、電力変換を行う装置などに用いられ、電力変換を行う単数または複数の半導体素子である半導体スイッチング素子を内蔵したモジュールである。
半導体モジュール100を備えた装置の例として、電動パワーステアリング装置200について説明する。電動パワーステアリング装置200は、バッテリ9から供給された電力を変換してモータ2に出力する装置である。電動パワーステアリング装置200は、図1に示すように、制御ユニット1、モータ2、バッテリ9、イグニションスイッチ10、及び回転センサ6等のセンサから構成される。モータ2は、3相の巻線(U相、V相、W相)からなるブラシレスモータである。回転センサ6は、モータ2の近傍に配置され、モータ2の回転角を検出して制御ユニット1が備える制御回路3に出力する。また、センサ8は、ハンドル操作力を検出するトルクセンサ、及び車速センサ等を備え、それぞれのセンサが検出した物理量に応じた電気信号を制御回路3に出力する。
1相分のブリッジ回路4aを、半導体モジュール100として形成した場合について説明する。半導体モジュール100は、図2に示すように、板状に形成された複数のベースプレート50と、制御端子80と、少なくとも1つのベースプレート50の一方の面側に接合された、少なくとも1つの半導体素子である半導体スイッチング素子と、2つ以上のベースプレート50の一方の面側の間を接続した、少なくとも1つの接続部材45とを備える。ベースプレート50、及び制御端子80は、銅または銅合金などの同じ材料で作製された導電性部材である。ベースプレート50、及び制御端子80は、同一平面上に隙間を空けて並べて設けられる。ここでは、5つのベースプレート50と4つの制御端子80が設けられる。接続部材45は2つ設けられる。接続部材45の詳細は後述する。図2に示した半導体モジュール100は、3つの半導体スイッチング素子41、42、44を有し、さらにシャント抵抗43を備える。ここでの半導体スイッチング素子41、42、44は、FET(Field Effect Transistor)である。なお、ベースプレート50に接合される半導体素子は半導体スイッチング素子に限るものではない。
図3に示した別の半導体モジュール101について説明する。半導体モジュール100が3つの半導体スイッチング素子41、42、44を有しているのに対して、半導体モジュール101は1つの半導体スイッチング素子42のみを有している。半導体モジュール100と半導体モジュール101はそれぞれが同じベースプレート50を有し、ベースプレート50は半導体モジュール100と半導体モジュール101とで共有化されている。半導体モジュール100は2つの接続部材45a、45bを有し、半導体モジュール101は2つの接続部材45c、45bを有している。半導体モジュール100が接続部材45aを有し、半導体モジュール101が接続部材45cを有しているため、ベースプレート50は半導体モジュール100と半導体モジュール101とで共有化される。以下、本願の要部である接続部材45の詳細について説明する。
接続部材45は、半導体スイッチング素子を介してベースプレート50に接続された部分である半導体素子接続部及びベースプレート50に直接接続された部分であるベースプレート接続部の一方または双方を有している。接続部材45は、例えば銅板で橋形状に形成される。図2に示した接続部材45aは、半導体スイッチング素子41のソース部と半導体スイッチング素子44のソース部とベースプレート50cとを接続する。接続部材45aは、2つの半導体素子接続部と1つのベースプレート接続部とを有する。接続部材45bは、半導体スイッチング素子42のソース部とベースプレート50dとを接続する。接続部材45bは、1つの半導体素子接続部と1つのベースプレート接続部とを有する。図3に示した接続部材45cは、ベースプレート50aとベースプレート50bとベースプレート50cとを接続する。接続部材45cは、3つのベースプレート接続部を有する。ベースプレート50に接合されると共に接続部材45に接続される半導体スイッチング素子の数が異なる半導体モジュールであっても、接続部材45cが3つのベースプレート接続部を有するため、ベースプレート50を共有化しつつ異なる回路パターンを形成することができる。また、ベースプレート50が共用化されるため、一品一葉の半導体モジュールにならないので、半導体モジュールの生産性を向上させることができる。
半導体モジュール100の製造方法について、図12を用いて説明する。半導体モジュール100は、部材用意工程(S11)と、接続工程(S12)と、ワイヤボンディング工程(S13)と、封止工程(S14)とで製造される。以下では、図2に示した半導体モジュール100の製造方法の各工程について主に説明するが、別の半導体モジュールである半導体モジュール101、102の製造方法も同様である。
従って、例示されていない無数の変形例が、本願明細書に開示される技術の範囲内において想定される。例えば、少なくとも1つの構成要素を変形する場合、追加する場合または省略する場合、さらには、少なくとも1つの構成要素を抽出し、他の実施の形態の構成要素と組み合わせる場合が含まれるものとする。
6 回転センサ、7 コンデンサ、8 センサ、9 バッテリ、10 イグニションスイッチ、30 CPU、31 駆動回路、32 入力回路、33 電源回路、41 半導体スイッチング素子、42 半導体スイッチング素子、43 シャント抵抗、44 半導体スイッチング素子、45 接続部材、46 ボンディングワイヤ、47 ボンディングワイヤ、48 端子、50 ベースプレート、51 端子部、60 中心線、61 貫通孔、62 平坦部、62a 平行な面、63 軸、70 モールド樹脂、80 制御端子、81 端子部、90 治具、100 半導体モジュール、101 半導体モジュール、102 半導体モジュール、200 電動パワーステアリング装置
Claims (10)
- 導電性部材からなり、板状に形成された複数のベースプレートと、
少なくとも1つの前記ベースプレートの一方の面側に接合された、少なくとも1つの半導体素子と、
導電性部材からなり、2つ以上の前記ベースプレートの一方の面側の間を接続した、少なくとも1つの接続部材と、を備え、
複数の前記ベースプレートは、同一平面上に隙間を空けて並べられ、
前記接続部材は、前記半導体素子を介して前記ベースプレートに接続された部分である半導体素子接続部及び前記ベースプレートに直接接続された部分であるベースプレート接続部の一方または双方を有している半導体モジュール。 - 前記接続部材における2つの前記ベースプレートの間に接続された部分に、前記ベースプレートの側とは反対側の面が、前記ベースプレートの一方の面に平行になっており、前記ベースプレートの一方の面と間隔を空けた平坦部を有している請求項1に記載の半導体モジュール。
- 前記接続部材は、板状に形成され、
前記平坦部の幅は、前記半導体素子接続部の幅及び前記ベースプレート接続部の幅よりも太く形成されている請求項2に記載の半導体モジュール。 - 前記接続部材は、少なくとも2つの前記平坦部を有し、
前記ベースプレートの一方の面から2つの前記平坦部までのそれぞれの高さが異なっている請求項2または3に記載の半導体モジュール。 - 前記接続部材は、前記半導体素子接続部及び前記ベースプレート接続部のそれぞれの中央に、前記ベースプレートの一方の面の法線方向に貫通した貫通孔を有している請求項1から4のいずれか1項に記載の半導体モジュール。
- 複数の前記貫通孔は、一つの方向に並べて設けられ、
前記接続部材は、複数の前記貫通孔の並べられた方向に延出し、
前記ベースプレートの一方の面に垂直な方向に見て、
前記接続部材は、複数の前記貫通孔のそれぞれの中心を結んだ直線に対して、線対称に形成されている請求項5に記載の半導体モジュール。 - 複数の前記貫通孔は、一つの方向に並べて設けられ、
前記接続部材は、複数の前記貫通孔の並べられた方向に延出し、
前記ベースプレートの一方の面に垂直な方向に見て、
複数の前記貫通孔の中央に配置された前記貫通孔における前記接続部材の延出方向に垂直な軸に対して、前記接続部材は、左右非対称に形成されている請求項5または6に記載の半導体モジュール。 - 複数の前記ベースプレート、前記半導体素子、及び前記接続部材を封止したモールド樹脂を備え、
前記ベースプレートの一方の面に垂直な方向に見て、前記モールド樹脂の外形は長辺と短辺を有した矩形状に設けられ、
前記接続部材は、前記モールド樹脂の長辺方向に平行な方向に延出している請求項1から7のいずれか1項に記載の半導体モジュール。 - 前記接続部材における前記ベースプレートの側とは反対側の面が、前記ベースプレートの一方の面に平行になっており、前記接続部材における前記ベースプレートとの接続部が、前記ベースプレートの側に突出している請求項1に記載の半導体モジュール。
- 導電性部材からなり、板状に形成され、同一平面上に隙間を空けて並べられた複数のベースプレートと、少なくとも1つの半導体素子と、少なくとも1つの導電性部材からなる接続部材とを用意する部材用意工程と、
2つ以上の前記ベースプレートの一方の面側の間を、前記半導体素子を介して、または前記半導体素子を介さずに、前記接続部材により接続する接続工程と、を備え、
前記接続工程では、
前記ベースプレートと前記接続部材との複数の接続箇所のそれぞれを、前記半導体素子を介して接続する間接接続方法と、前記半導体素子を介さずに直接接続する直接接続方法とのいずれかで接続し、
前記複数の接続箇所を、前記間接接続方法及び前記直接接続方法の第1設定パターンで接続する第1接続工程と、
前記複数の接続箇所を、前記第1設定パターンとは異なる、前記間接接続方法及び前記直接接続方法の第2設定パターンで接続する第2接続工程と、を実行する半導体モジュールの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023552644A JPWO2023058211A1 (ja) | 2021-10-08 | 2021-10-08 | |
CN202180103029.0A CN118056278A (zh) | 2021-10-08 | 2021-10-08 | 半导体模块及其制造方法 |
PCT/JP2021/037277 WO2023058211A1 (ja) | 2021-10-08 | 2021-10-08 | 半導体モジュール及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2021/037277 WO2023058211A1 (ja) | 2021-10-08 | 2021-10-08 | 半導体モジュール及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2023058211A1 true WO2023058211A1 (ja) | 2023-04-13 |
Family
ID=85804037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2021/037277 WO2023058211A1 (ja) | 2021-10-08 | 2021-10-08 | 半導体モジュール及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2023058211A1 (ja) |
CN (1) | CN118056278A (ja) |
WO (1) | WO2023058211A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012137333A1 (ja) | 2011-04-07 | 2012-10-11 | 三菱電機株式会社 | モールドモジュール、及び電動パワーステアリング装置 |
WO2019207664A1 (ja) * | 2018-04-25 | 2019-10-31 | 三菱電機株式会社 | 共用ベースプレート及びこれを備えた半導体モジュール |
WO2019215806A1 (ja) * | 2018-05-08 | 2019-11-14 | 三菱電機株式会社 | 配線部材及びこれを備えた半導体モジュール |
-
2021
- 2021-10-08 WO PCT/JP2021/037277 patent/WO2023058211A1/ja active Application Filing
- 2021-10-08 CN CN202180103029.0A patent/CN118056278A/zh active Pending
- 2021-10-08 JP JP2023552644A patent/JPWO2023058211A1/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012137333A1 (ja) | 2011-04-07 | 2012-10-11 | 三菱電機株式会社 | モールドモジュール、及び電動パワーステアリング装置 |
WO2019207664A1 (ja) * | 2018-04-25 | 2019-10-31 | 三菱電機株式会社 | 共用ベースプレート及びこれを備えた半導体モジュール |
WO2019215806A1 (ja) * | 2018-05-08 | 2019-11-14 | 三菱電機株式会社 | 配線部材及びこれを備えた半導体モジュール |
Also Published As
Publication number | Publication date |
---|---|
JPWO2023058211A1 (ja) | 2023-04-13 |
CN118056278A (zh) | 2024-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10556618B2 (en) | Drive apparatus and electric power steering apparatus using the same | |
CN108137084B (zh) | 一体型电动助力转向装置及其制造方法 | |
US10192818B2 (en) | Electronic part mounting heat-dissipating substrate | |
CN107004648B (zh) | 电子部件搭载用散热基板 | |
JP2017157418A (ja) | 接続端子組立体及びこれを用いた電動駆動装置 | |
JP2008042089A (ja) | 半導体装置 | |
JP5108421B2 (ja) | 分割モジュール端子を有するインバータ装置 | |
JP6937897B2 (ja) | 電動パワーステアリング装置 | |
WO2023058211A1 (ja) | 半導体モジュール及びその製造方法 | |
JP6096994B1 (ja) | パワー半導体モジュールの端子接続構造 | |
JP7214050B2 (ja) | 半導体モジュール | |
JP5407244B2 (ja) | モータ駆動装置 | |
JPWO2019207664A1 (ja) | 共用ベースプレート及びこれを備えた半導体モジュール | |
US11404363B2 (en) | Connection terminal unit | |
US10854537B2 (en) | Power semiconductor device and power module | |
WO2022079759A1 (ja) | 半導体モジュール | |
JP2021103905A (ja) | 回路装置及び回路装置の製造方法 | |
JP2005123239A (ja) | 電子回路装置 | |
US20240244806A1 (en) | Power electronic arrangement for an externally excited synchronous machine, motor vehicle and method for producing a power electronic arrangement | |
JP2020161683A (ja) | 半導体装置及び半導体装置の製造方法 | |
JP6021047B1 (ja) | モータ | |
CN106415831B (zh) | 半导体模块 | |
JP2016162885A (ja) | 電子部品及び電子部品の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 21959953 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2023552644 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2021959953 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 2021959953 Country of ref document: EP Effective date: 20240508 |