WO2023050041A1

WO2023050041A1 - Die bonding method and die bonding machine

Info

Publication number: WO2023050041A1
Application number: PCT/CN2021/121234
Authority: WO
Inventors: 曾逸; 杨林
Original assignee: 深圳市卓兴半导体科技有限公司
Priority date: 2021-09-28
Filing date: 2021-09-28
Publication date: 2023-04-06

Abstract

Provided in the present invention are a die bonding method and a die bonding machine. The die bonding method comprises: a crystal picking step: controlling a swing arm to swing to a crystal picking position, pushing a wafer on a blue film onto a swing arm suction nozzle by means of a pin, then the swing arm swinging to a transfer position; a movement control step: controlling linear movement of a linear die bonding head to the transfer position; a transfer step: when both the swing arm suction nozzle and the linear die bonding head are located at the transfer position, controlling a die bonding suction nozzle to pick up the wafer on the swing arm suction nozzle; and a die bonding step: first, controlling linear movement of the linear die bonding head to a die bonding position, then controlling the die bonding suction nozzle of the linear die bonding head to bond the wafer onto a circuit board. The beneficial effects of the present invention are: in the present invention, the wafer is relayed once at the transfer position by means of the swing arm suction nozzle and the linear die bonding head, such that a travel of the linear die bonding head is shortened; using the die bonding method and die bonding machine of the present invention, it is possible not only to affix larger circuit boards, but also significantly increase the speed of conveying wafers, resulting in higher efficiency.

Description

A kind of solid crystal method and crystal solid machine

technical field

The invention relates to the technical field of crystal bonding, in particular to a crystal bonding method and a crystal bonding machine.

Background technique

In the current field of die bonding technology, the biggest difficulty in making large-sized circuit boards is how to realize high-speed wafer transfer. The current mainstream method is swing arm transfer, that is, the swing arm suction nozzle picks up the wafer after the blue film Transfer directly to the die-bonding point of the circuit board, and the whole process is completed at one time. This method has no problem for small-sized circuit boards, but once the circuit board exceeds 300mm, it seems powerless. The use of linear motors for one-time transfer to complete the die-bonding also has fatal flaws. The efficiency of long-distance reciprocating movement is too low. The larger the circuit board, the longer the moving distance, and the lower the production efficiency.

Contents of the invention

The invention provides a method for solid crystal, comprising the steps of:

Crystal picking step: Control the swing arm to swing to the pick-up position, push the wafer on the blue film to the suction nozzle of the swing arm through the thimble, install the blue film on the crystal ring, then swing the swing arm to the transfer position, and then execute transfer steps;

Movement control step: control the linear movement of the straight die bonding head to the transfer position, and then execute the transfer step;

Transfer step: when both the swing arm suction nozzle and the linear die bonding head are at the transfer position, control the die bonding nozzle of the linear die bonding head to pick up the wafers on the swing arm suction nozzle, and then perform the crystal removal step and the die bonding step ;

Die bonding step: firstly control the linear die bonding head to move to the die bonding position in a straight line, then control the die bonding nozzle of the linear die bonding head to bond the die to the circuit board, and then perform the movement control step.

As a further improvement of the present invention, in the crystal extraction step, when the swing arm swings to the crystal extraction position, the suction nozzle of the swing arm is located under the crystal element ring, the blue film is installed on the crystal element ring, and the crystal element faces downward. The element faces the swing arm suction nozzle, and the thimble located above the wafer ring pushes the wafer on the blue film downward to the swing arm suction nozzle; in the transfer step, the linear die bonding head is located above the swing arm suction nozzle , Control the die-bonding nozzle of the linear die-bonding head to move downward to suck the wafer on the swing arm nozzle or control the swing arm nozzle to move upward so that the die-bonding nozzle sucks the wafer on the swing arm nozzle.

As a further improvement of the present invention, a first camera is also provided at the crystal extraction position, and the first camera is located under the suction nozzle of the swing arm. Before performing the crystal extraction step, the crystal extraction and alignment step is performed. In the first step, the first camera is aligned with the nozzle of the swing arm. If the first camera and the nozzle of the swing arm are not on the same straight line, then adjust the position of the first camera so that the first camera and the nozzle of the swing arm are on the same straight line. Then the first camera and the thimble are positioned. If the first camera and the thimble are not on the same straight line, then adjust the position of the thimble so that the first camera and the thimble are on a straight line; when performing the crystal extraction step, control the movement position of the wafer ring, The first camera takes pictures to judge whether the wafer and the thimble are on the same straight line. If so, then the swing arm suction nozzle swings to the bottom of the wafer ring, and pushes the wafer on the blue film to the swing arm suction nozzle through the thimble. If the wafer If it is not on the same straight line as the thimble, then fine-tune the position of the wafer ring so that the wafer and the thimble are on the same straight line. Then, the swing arm suction nozzle swings to the bottom of the wafer ring, and the crystal on the blue film is sucked by the thimble. Push the element onto the suction nozzle of the swing arm.

As a further improvement of the present invention, a second camera is also provided at the transfer position. When both the swing arm and the linear die bonding head are located at the transfer position, the linear die bonding head is located above the swing arm suction nozzle, and the second camera is located at the swing arm Below the suction nozzle; when the crystal bonding nozzle controlling the linear die bonding head picks up the wafer on the swing arm suction nozzle, after the swing arm swings from the transfer position to the pick-up position, the swing arm suction nozzle is not in the transfer position at this time, The wafer on the linear die bonding head is photographed by the second camera, and the angle deviation value of the wafer is calculated according to the photographed photos to control the rotation of the linear die bonding head so as to correct the angle of the die.

As a further improvement of the present invention, a third camera is also provided at the crystal-bonding position, and the crystal-bonding method also includes a crystal-bonding alignment step. In the crystal-bonding alignment step, the third camera is aligned with the crystal-bonding suction nozzle, so that The third camera and the die-bonding nozzle are located on a straight line; in the die-bonding step, the movement position of the die-bonding table is controlled, and the die-bonding table is used to carry the circuit board, and the third camera takes pictures to determine the connection between the die-bonding point of the circuit board and the first Are the three cameras on the same straight line? If so, then move the straight die bonding head to the die bonding position so that the die bonding nozzle and the die bonding point are on the same straight line. If the die bonding point of the circuit board is not in line with the third camera On the same straight line, then control the position of the die-bonding table for fine-tuning, so that the die-bonding point of the circuit board and the third camera are on the same straight line, and then move the straight-line die-bonding head to the die-bonding position so that the die-bonding nozzle It is located on the same straight line as the die bonding point, and then controls the die bonding nozzle of the linear die bonding head to bond the die to the circuit board.

As a further improvement of the present invention, in the die-bonding step, during the downward movement of the die-bonding nozzle, the pressure on the die-bonding nozzle is detected, and when the pressure change of the die-bonding nozzle reaches a set value, the control Die bonding nozzles attach the die to the circuit board.

As a further improvement of the present invention, in the die-bonding step, there are two ways to detect the pressure on the die-bonding nozzle. The first way is to detect the current change of the motor. When the current of the motor is greater than the preset value, Judging that the pressure change of the die-bonding nozzle reaches the set value; the second method: use the pressure sensor to detect that the pressure on the die-bonding nozzle reaches the set value.

The present invention also provides a crystal bonding machine, which includes a swing arm mechanism, a linear crystal bonding mechanism, a wafer ring, and a thimble. The wafer ring and the thimble are installed at the crystal picking position. Install the blue film, the blue film is placed on the wafer, the thimble is located above the wafer ring, the swing arm suction nozzle is installed on the swing arm upward, when the swing arm swings to the crystal When in position, the suction nozzle of the swing arm is located under the wafer ring; the swing arm mechanism includes a swing arm and a swing arm drive mechanism, the swing arm drive mechanism is used to drive the swing arm to swing, and the swing arm is equipped with Swing arm suction nozzle; the linear die bonding mechanism includes a linear die bonding head and a linear die bonding head driving mechanism, and the linear die bonding head driving mechanism is used to drive the linear die bonding head to move; the linear die bonding head It includes a motor and a crystal-bonding suction nozzle, the motor includes a motor body, and a motor spindle connected to the motor body, the crystal-bonding suction nozzle is connected to the motor spindle; when the swing arm swings to the crystal-taking position , push the wafer on the blue film to the suction nozzle of the swing arm through the thimble; The suction nozzle sucks the wafer on the suction nozzle of the swing arm; when the linear die bonding head moves to the die bonding position in a straight line, the die bonding nozzle of the linear die bonding head will bond the die to the circuit board.

As a further improvement of the present invention, the crystal bonding machine also includes a first camera, a solid crystal table, and a third camera. The crystal element and the thimble on the blue film are photographed by the first camera, and the movement of the crystal element ring is controlled to make the swing arm The suction nozzle, the wafer and the thimble are aligned, and the thimble pushes the wafer on the blue film downward to the suction nozzle of the swing arm; the crystal-bonding table is installed at the crystal-bonding position, and the crystal-bonding table is used to carry the circuit board. At the die-bonding position, control the moving position of the die-bonding table, take pictures with the third camera to judge whether the die-bonding point of the circuit board is on the same line as the third camera, if so, move the straight-line die-bonding head to the The crystal suction nozzle and the crystal-bonding point are located on the same straight line. If the crystal-bonding point of the circuit board is not on the same straight line as the third camera, then control the position of the crystal-bonding table for fine-tuning so that the crystal-bonding point of the circuit board is in line with the third camera. The camera is on the same straight line, and then, the straight-line die-bonding head moves to the die-bonding position in a straight line, so that the straight-line die-bonding head is aligned with the die-bonding point of the circuit board, and the straight-line die-bonding head bonds the wafer to the circuit board above; when the swing arm swings to the crystal picking position, the first camera is located below the swing arm suction nozzle; The crystal bonding head is located above the swing arm suction nozzle; the third camera is located above the crystal bonding table.

As a further improvement of the present invention, the die bonding machine also includes a second camera. After the crystal die is picked up by the die bonding nozzle of the linear die bonding head, the swing arm is controlled to swing from the switching position to the crystal picking position, and then passes through the first The second camera takes pictures of the wafer on the linear die bonding head and calculates the angle deviation value of the wafer to control the rotation of the linear die bonding head so as to correct the angle of the wafer; when the swing arm and the linear die bonding head are located When switching position, the second camera is located under the suction nozzle of the swing arm.

As a further improvement of the present invention, the die bonding machine also includes a pressure detection module, which is used to detect the pressure on the die bonding nozzle when the die bonding nozzle moves downward during the die bonding, When the pressure change of the die-bonding nozzle reaches the set value, control the die-bonding nozzle to bond the die to the circuit board.

As a further improvement of the present invention, the pressure detection module is used to detect the current change of the motor, and when the current of the motor is greater than a preset value, it is judged that the pressure change of the die-bonding nozzle reaches a set value.

As a further improvement of the present invention, the linear die bonding head also includes a force transmission part and a pressure sensor. When the motor spindle moves, it will drive the force transmission part to move accordingly, and the force transmission part will squeeze when moving The pressure sensor, the pressure sensor generates pressure data, and the pressure detection module judges whether the pressure data has changed. When the pressure data changes, the pressure of the die-bonding nozzle is controlled to be within the set value, and then the die-bonding nozzle is controlled to Blow down the die to carry out die bonding.

As a further improvement of the present invention, there are at least two swing arms, and the number of linear die bonding heads is the same as the number of the swing arms, and each of the linear die bonding heads is used to cooperate with the corresponding swing arm to complete the die bonding. The number of the wafer ring and the thimble is the same as the number of the swing arm, and each of the thimbles cooperates with the corresponding swing arm to complete crystal extraction at the corresponding wafer ring.

The beneficial effects of the present invention are: the present invention makes a relay on the crystal element at the transfer position through the swing arm suction nozzle and the linear die bonding head, shortens the moving stroke of the linear die bonding head, and adopts the die bonding method and die bonding method of the present invention The crystal machine can not only fix larger circuit boards, but also greatly improve the handling speed of wafers, resulting in higher efficiency.

Description of drawings

Fig. 1 is a schematic diagram of the structure principle of the present invention;

Figure 2 is a schematic diagram of the structure of a linear die bonding head;

Fig. 3 is a partial sectional view of a linear die bonding head;

Fig. 4 is the front view of solid crystal machine;

Figure 5 is a perspective view of a crystal bonder;

Fig. 6 is an enlarged view of place A of Fig. 5;

Fig. 7 is a schematic diagram of the ejector pin structure.

Detailed ways

As shown in Figures 1, 4, 5, 6, and 7, the present invention discloses a crystal bonding machine, which includes a swing arm mechanism and a linear crystal bonding mechanism. The swing arm mechanism includes a swing arm 10 and a swing arm drive mechanism 13. The swing arm driving mechanism 13 is used to drive the swing arm 10 to swing, and the swing arm suction nozzle is installed on the swing arm 10; the linear crystal bonding mechanism includes a linear crystal bonding head 20, a linear crystal bonding head driving mechanism 21. The linear die bonding head driving mechanism 21 is used to drive the linear die bonding head 20 to move; when the swing arm 10 swings to the crystal fetching position, push the wafer on the blue film to the swing through the thimble 12 arm suction nozzle; when the swing arm 10 swings to the transfer position and the linear die bonding head 20 linearly moves to the transfer position, the die bonding nozzle 200 of the linear die bonding head 20 absorbs the Wafer; when the linear die bonding head 20 linearly moves to the die bonding position, the die bonding suction nozzle 200 of the linear die bonding head 20 will bond the die to the circuit board.

The crystal bonding machine also includes a wafer ring 11, a thimble 12, a first camera 30, a second camera 40, a solid crystal platform, and a third camera 50, the wafer ring 11 and the thimble 12 are installed at the crystal extraction position, The crystal element ring 11 is used to install a blue film, and the crystal element is placed on the blue film, the thimble 12 is located above the crystal element ring 11, and the swing arm suction nozzle is installed on the swing arm 10, when the swing arm 10 swings to the pick-up position, the suction nozzle of the swing arm is located under the wafer ring 11, and the wafer and thimble 12 on the blue film are photographed by the first camera 30 to control the wafer ring 11 Move to align the suction nozzle of the swing arm, the wafer and the thimble 12, and the thimble 12 pushes the crystal on the blue film downward to the suction nozzle of the swing arm. After the die-bonding suction nozzle 200 of the linear die-bonding head 20 sucks the wafer, the swing arm 10 is controlled to swing from the transfer position to the pick-up position, and then the die on the straight-line die-bonding head 20 is checked by the second camera 40 Take pictures and calculate the angle deviation value of the wafer to control the rotation of the linear die bonding head 20 so as to correct the angle of the wafer. The crystal-bonding table is installed at the crystal-bonding position, and the crystal-bonding table is used to carry the circuit board. At the crystal-bonding position, the moving position of the crystal-bonding table is controlled. The third camera 50 takes pictures to determine the crystal-bonding point of the circuit board and the third camera. Whether 50 is on the same straight line, if so, then the straight-line die-bonding head 20 moves to the die-bonding position in a straight line so that the straight-line die-bonding head 20 and the die-bonding point are on the same straight line. 50 is not on the same straight line, then control the position of the crystal bonding table to fine-tune, so that the crystal bonding point of the circuit board is on the same straight line as the third camera 50, and then, the linear crystal bonding head 20 moves to the crystal bonding position in a straight line, so that The linear die bonding head 20 is aligned with the die bonding point of the circuit board, and the linear die bonding head 20 bonds the die to the circuit board.

When the swing arm 10 swings to the crystal picking position, the first camera 30 is located under the suction nozzle of the swing arm; The linear die bonding head 20 is located above the swing arm suction nozzle, the second camera 40 is located below the swing arm suction nozzle; the third camera 50 is located above the crystal bonding table.

As shown in FIGS. 2 and 3 , the linear die bonding head 20 includes a motor 100 , a die bonding nozzle 200 , a force transmission member 300 , and a pressure sensor 500 . The motor 100 includes a motor body 101 and is connected to the motor body 101 The motor spindle 102, the die-bonding suction nozzle 200 is connected with the motor spindle 102, when the motor spindle 102 moves, it will drive the force transmission member 300 to move accordingly, and the force transmission member 300 will squeeze when moving Press the pressure sensor 500.

The linear die-bonding head 20 also includes a die-bonding nozzle mounting sleeve 201, the die-bonding nozzle mounting sleeve 201 is connected to the motor spindle 102, and the crystal-bonding nozzle 200 is connected to the crystal-bonding nozzle mounting sleeve 201. connected, the force transmission member 300 is located above the die-bonding nozzle installation sleeve 201, and the die-bonding nozzle installation sleeve 201 will squeeze the force transmission member 300 when moving upward, so that the force transmission member 300 moves up.

The force transmission member 300 is a sleeve, the sleeve is sleeved on the outer surface of the motor shaft 102 , and the sleeve can move along the motor shaft 102 .

The motor 100 also includes a motor mounting base 103 , the motor body 101 is mounted on the motor mounting base 103 , and the pressure sensor 500 is mounted on the motor mounting base 103 .

As a preferred embodiment of the present invention, the motor 100 is a micro stepper motor, and the pressure sensor 500 is a thin-film pressure sensor.

The motor 100 is used to drive the die bonding nozzle 200 to move, thereby completing the crystal removal and crystal bonding operations. The present invention utilizes the gap existing in the axial direction of the motor spindle 102. When the die-bonding nozzle 200 picks up the wafer, the motor spindle 102 will move back slightly in the axial direction, thereby squeezing the force transmission member 300, and the force transmission member 300 will follow Moving, the force transmitting member 300 will squeeze the pressure sensor 500, which converts the pressure into pressure data.

The die bonding machine also includes a pressure detection module. When the die bonding nozzle 200 moves downward, the pressure detection module is used to detect the pressure on the die bonding nozzle 200. When the pressure of 200 changes, control the die-bonding suction nozzle 200 to fix the die on the circuit board.

The pressure detection module is used to detect the change of the current of the motor 100, and when the current of the motor 100 is greater than a preset value, it is determined that the pressure of the die bonding nozzle 200 has changed.

During die bonding, when the linear die bonding head 20 is under force, the die bonding nozzle 200 as a whole will move slightly backward, and the motor shaft 102 itself has a small amount of axial floating value, and the motor shaft 102 will move after being squeezed in the axial direction. When the motor shaft 102 moves backward, the sleeve will be displaced synchronously, and the displacement of the sleeve will squeeze the film pressure sensor to form data feedback (pressure data).

When the size of the circuit board is large, the circuit board may appear uneven. In this case, in order to achieve effective die bonding on the circuit board, when the die bonding nozzle 200 contacts the protrusion of the circuit board, The pressure sensor 500 detects that the pressure data changes. At this time, it is judged that the die-bonding nozzle 200 has touched the protrusion of the circuit board. However, the die-bonding nozzle 200 may be in contact with the protrusion of the circuit board too closely. The pressure sensor 500 detects that the pressure data is greater than the normal range (setting value). At this time, the die bonding nozzle 200 cannot normally bond the wafer to the circuit board. Therefore, in the present invention, the main control board controls the motor 100 so that The die-bonding nozzle 200 is retracted (the Z-axis movement of the die-bonding nozzle 200 is automatically compensated by the change of the die-bonding position), so that the pressure of the die-bonding nozzle 200 is within the normal range (setting value), Then, the main control board controls the die-bonding nozzle 200 to blow and put down the die to carry out the die-bonding, thus, the die-bonding of the protruding part of the circuit board is completed; when the die-bonding nozzle 200 touches the depression of the circuit board, the pressure sensor 500 detects that the pressure data has changed. At this time, it is judged that the die-bonding nozzle 200 has touched the depression of the circuit board. However, since the Z-axis movement of the die-bonding nozzle 200 is a fixed value, the die-bonding nozzle 200 has There may be little or no contact with the depression of the circuit board. The pressure sensor 500 detects that the pressure data is less than the normal range (set value). At this time, the die bonding nozzle 200 cannot normally bond the die to the circuit. board, so, in the present invention, the main control board controls the motor 100 to make the suction nozzle 200 continue to drop. When the pressure of the suction nozzle 200 is within the normal range (set value), then the main control board controls the die The suction nozzle 200 blows air and puts down the wafer to carry out the die bonding, thereby completing the die bonding in the depression of the circuit board; through the above-mentioned method, completing the die bonding of a circuit board with a larger size.

As a preferred embodiment of the present invention, there are at least two swing arms 10, the number of linear die bonding heads 20 is the same as that of the swing arms 10, each of the linear die bonding heads 20 is used for corresponding swing Arm 10 cooperates to complete wafer transfer, the number of the wafer ring 11 and the thimble 12 is the same as the number of the swing arm 10, each of the thimble 12 cooperates with the corresponding swing arm 10 so that the corresponding crystal The crystallization was completed at Yuanhuan 11. The die bonding is completed through the cooperation of multiple swing arms 10 and multiple linear die bonding heads 20 to improve efficiency.

The invention also discloses a crystal-fixing method, which includes the following steps:

Crystal extraction step: Control the swing arm 10 to swing to the crystal extraction position, push the wafer on the blue film to the suction nozzle of the swing arm through the thimble 12, install the blue film on the crystal ring 11, and then swing the swing arm 10 to the transfer bit, and then execute the transfer step;

Movement control step: control the straight-line die bonding head 20 to move to the transfer position in a straight line, and then execute the transfer step;

Transfer step: when both the swing arm suction nozzle and the linear die bonding head 20 are located at the transfer position, control the die bonding nozzle 200 of the linear die bonding head 20 to suck the wafer on the swing arm suction nozzle, and then perform the crystal removal step and Solid crystal step;

Die bonding step: firstly control the linear die bonding head 20 to move to the die bonding position in a straight line, then control the die bonding nozzle 200 of the linear die bonding head 20 to bond the die to the circuit board, and then execute the movement control step.

In the crystal extraction step, when the swing arm 10 swings to the crystal extraction position, the suction nozzle of the swing arm is located under the crystal element ring 11, the blue film is installed on the crystal element ring 11, the crystal element faces downward, and the crystal element faces the swing arm suction nozzle (since the wafer is facing down and facing the swing arm suction nozzle, so the traditional wafer flipping process is simplified and the cost of the wafer can be effectively reduced), the thimble 12 located above the wafer ring 11 will be blue The wafer on the film is ejected downwards, and the swing arm suction nozzle sucks the wafer; in the step 3, the linear die bonding head 20 is located above the swing arm suction nozzle, and the die bonding nozzle 200 of the linear die bonding head 20 is controlled downward Move and pick up the wafer on the swing arm nozzle. At this time, the crystal bonding nozzle 200 moves down, and the swing arm nozzle does not move; or, control the swing arm nozzle to move upward so that the crystal bonding nozzle 200 absorbs the At this time, the swing arm nozzle moves upward to the position of the die bonding nozzle 200, and the die bonding nozzle 200 does not move.

A first camera 30 is also provided at the crystal-taking position, and the first camera 30 is positioned under the suction nozzle of the swing arm. Before performing the crystal-taking step, the crystal-taking alignment step is carried out. In the crystal-taking alignment step, first the first The camera 30 and the swing arm suction nozzle are aligned, if the first camera 30 and the swing arm suction nozzle are not on the same straight line, then adjust the position of the first camera 30 so that the first camera 30 and the swing arm suction nozzle are on the same straight line, and then The first camera 30 is aligned with the thimble 12. If the first camera 30 and the thimble 12 are not on the same straight line, adjust the position of the thimble 12 so that the first camera 30 and the thimble 12 are on a straight line; The wafer ring 11 moves the position. At this time, the wafer on the blue film may be on the same straight line as the thimble 12, and the wafer may not be on the same straight line as the thimble 12, but the position of the wafer and the thimble 12 will not be the same. If there are too many deviations, then, in the present invention, it is determined whether the wafer and the thimble 12 are on the same straight line by taking pictures with the first camera 30. The wafer on the film is pushed onto the suction nozzle of the swing arm. If the wafer and the thimble 12 are not on the same straight line, then control the position of the wafer ring 11 to make fine adjustments so that the wafer and the thimble 12 are on the same straight line. Then, The suction nozzle of the swing arm swings to the bottom of the wafer ring 11, and pushes the wafer on the blue film to the suction nozzle of the swing arm through the thimble 12.

There is also a second camera 40 at the transfer position. When both the swing arm 10 and the linear die bonding head 20 are located at the transfer position, the linear die bonding head 20 is located above the swing arm suction nozzle, and the second camera 40 is located at the swing arm suction nozzle. Below; when the crystal bonding nozzle 200 controlling the linear crystal bonding head 20 sucks the crystal on the swing arm suction nozzle, when the swing arm 10 swings from the switching position to the crystal picking position, at this time, the swing arm 10 will not block the first Two cameras 40, then by the second camera 40, the crystal element on the linear solid crystal head 20 is photographed, and when it is found that the angle of the crystal element is not correct, the linear solid crystal head 20 is controlled to rotate (for example, the solid state of the linear solid crystal head 20 is controlled) crystal suction nozzle 200 rotation) to correct the angle of the crystal element, so that the crystal elements on the circuit board are aligned, the angle correction process can be completed at the transfer position or when the linear die bonding head 20 moves from the transfer position to the crystal bonding position completed in the process.

A third camera 50 is also provided at the crystal-bonding position, and the crystal-bonding method also includes a crystal-bonding alignment step. In the crystal-bonding alignment step, the third camera 50 is aligned with the crystal-bonding suction nozzle 200, so that the third camera 50 and the crystal bonding nozzle 200 are located on a straight line. In the crystal-bonding step, the moving position of the crystal-bonding table is controlled. The crystal-bonding table is used to carry the circuit board. Due to the movement of the crystal-bonding table, the crystal-bonding point of the circuit board and the third camera 50 may already be on the same straight line. , the crystal-bonding point of the circuit board and the third camera 50 may not be on the same straight line (even if the crystal-bonding point of the circuit board and the third camera 50 are not on the same straight line, the crystal-bonding point of the circuit board and the third camera 50 position will not deviate too much), then, in the present invention, determine whether the crystal bonding point of the circuit board and the third camera 50 are on the same straight line by taking pictures with the third camera 50, if so, the straight crystal bonding head 20 moves linearly To the crystal-bonding position, make the straight-line crystal-bonding head 20 and the crystal-bonding point be on the same straight line, if the crystal-bonding point of the circuit board is not on the same straight line as the third camera 50, then control the position of the crystal-bonding table for fine-tuning, so that The crystal-bonding point of the circuit board is on the same straight line as the third camera 50, and then, the straight-line crystal-bonding head 20 moves to the crystal-bonding position in a straight line, so that the straight-line crystal-bonding head 20 and the crystal-bonding point are on the same straight line, and then the straight line is controlled. The die bonding nozzle 200 of the die bonding head 20 bonds the die onto the circuit board.

In the die-bonding step, during the downward movement of the die-bonding nozzle 200, the pressure on the die-bonding nozzle 200 is detected, and when the pressure change of the die-bonding nozzle 200 reaches a set value, the die-bonding nozzle is controlled 200, the die is bonded to the circuit board.

As an embodiment of the present invention, in the die-bonding step, there are two ways to detect the pressure on the die-bonding nozzle 200. The first way is to detect the current change of the motor 100. When the current of the motor 100 is greater than the preset value, it is judged that the pressure change of the die-bonding nozzle 200 reaches the set value; the second method: the pressure sensor 500 detects that the pressure on the die-bonding nozzle 200 reaches the set value.

When working, the swing arm 10 swings to the pick-up position, picks up the wafer through the swing arm suction nozzle, then swings the swing arm 10 180 degrees to the transfer position, and the linear die bonding head 20 moves to the transfer position in a straight line to the left, and the linear die bonding The head 20 picks up the wafer on the swing arm suction nozzle, and then the linear die bonding head 20 moves straight to the right to the die bonding position, and the linear die bonding head 20 fixes the crystal on the circuit board, and then passes through the swing arm suction nozzle and the linear die bonding position. The crystal head 20 relays the wafer at the switching position, which shortens the stroke of the linear die bonding head 20. Using the die bonding method and die bonding machine of the present invention, larger circuit boards can be bonded, resulting in higher efficiency.

The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be assumed that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deduction or replacement can be made, which should be regarded as belonging to the protection scope of the present invention.

Claims

A kind of solid crystal method is characterized in that, comprises the steps:

Crystal extraction step: control the swing arm (10) to swing to the crystal extraction position, push the wafer on the blue film to the suction nozzle of the swing arm through the thimble (12), install the blue film on the wafer ring (11), and then swing The arm (10) swings to the transfer position, and then performs the transfer step;

Movement control step: controlling the straight-line die bonding head (20) to move linearly to the transfer position, and then performing the transfer step;

Transfer step: when both the swing arm suction nozzle and the linear die bonding head (20) are located at the transfer position, control the die bonding nozzle (200) of the linear die bonding head (20) to pick up the wafer on the swing arm suction nozzle, Then perform the crystal extraction step and the solid crystal step;

Die bonding step: firstly control the linear die bonding head (20) to move to the die bonding position in a straight line, then control the die bonding nozzle (200) of the linear die bonding head (20) to bond the die to the circuit board, and then execute the movement control steps.
The crystal bonding method according to claim 1, characterized in that, in the crystal extraction step, when the swing arm (10) swings to the crystal extraction position, the suction nozzle of the swing arm is located under the crystal element ring (11), and the blue film Installed on the wafer ring (11), with the wafer face down, the wafer faces the swing arm suction nozzle, and the thimble (12) located above the wafer ring (11) pushes the wafer on the blue film downward to the swing arm. On the arm suction nozzle; in the transfer step, the linear die-bonding head (20) is positioned above the swing-arm suction nozzle, and the crystal-bonding nozzle (200) of the straight-line die-bonding head (20) is controlled to move downward and absorb the swing arm suction The crystal element on the nozzle or the upward movement of the control swing arm suction nozzle makes the crystal bonding nozzle (200) suck the crystal element on the swing arm suction nozzle.
The crystal bonding method according to claim 2, characterized in that a first camera (30) is also provided at the crystal extraction position, and the first camera (30) is located under the suction nozzle of the swing arm, before performing the crystal extraction step , perform the crystal alignment step, in the crystal alignment step, first the first camera (30) is aligned with the swing arm suction nozzle, if the first camera (30) and the swing arm suction nozzle are not on the same straight line, then Adjust the position of the first camera (30) so that the first camera (30) and the suction nozzle of the swing arm are on the same straight line, and then the first camera (30) is aligned with the thimble (12). If the first camera (30) and the thimble (12) not on the same straight line, then adjust the position of the thimble (12) so that the first camera (30) and the thimble (12) are on a straight line; when performing the crystal extraction step, control the movement position of the wafer ring (11), The first camera (30) takes pictures to determine whether the wafer and the thimble (12) are on the same straight line. If the wafer and the thimble (12) are not on the same straight line, then control the position of the wafer ring (11) to make fine adjustments so that the wafer and the thimble (12) are on the same straight line. Then, the swing arm suction nozzle swings below the wafer ring (11), and pushes the wafer on the blue film onto the swing arm suction nozzle through the thimble (12).
The crystal bonding method according to claim 2, characterized in that, a second camera (40) is also provided at the transfer position, and when the swing arm (10) and the linear die bonding head (20) are both located at the transfer position, The linear crystal bonding head (20) is located above the swing arm suction nozzle, and the second camera (40) is located below the swing arm suction nozzle; After the wafer is placed, the swing arm (10) swings from the switching position to the crystal picking position. At this time, the suction nozzle of the swing arm is not at the switching position, and the crystal on the linear die bonding head (20) is fixed by the second camera (40). The unit is photographed, and the angle deviation value of the wafer is calculated according to the photo taken to control the rotation of the linear die-bonding head (20) so as to correct the angle of the wafer.
The crystal-bonding method according to claim 2, characterized in that, a third camera (50) is also provided at the crystal-bonding position, and the crystal-bonding method also includes a crystal-bonding alignment step, and in the crystal-bonding alignment step, the first The three-camera (50) is aligned with the die-bonding nozzle (200), so that the third camera (50) and the die-bonding nozzle (200) are on a straight line; in the die-bonding step, control the moving position of the die-bonding table , the solid crystal table is used to carry the circuit board, and the third camera (50) takes pictures to judge whether the solid crystal point of the circuit board and the third camera (50) are on the same straight line, if so, the straight solid crystal head (20) moves in a straight line To the crystal bonding position, make the crystal bonding nozzle (200) and the crystal bonding point be on the same straight line, if the crystal bonding point of the circuit board and the third camera (50) are not on the same straight line, then control the position of the crystal bonding table Carry out fine-tuning so that the crystal-bonding point of the circuit board is on the same straight line as the third camera (50), then, the straight-line crystal-bonding head (20) moves to the crystal-bonding position in a straight line, so that the crystal-bonding suction nozzle (200) is aligned with the crystal-bonding nozzle (200) The points are located on the same straight line, and then the crystal-bonding suction nozzle (200) of the straight-line crystal-bonding head (20) is controlled to bond the wafer to the circuit board.
The crystal bonding method according to claim 1, characterized in that, in the crystal bonding step, during the downward movement of the crystal bonding nozzle (200), the pressure on the crystal bonding nozzle (200) is detected, when When the pressure change of the crystal bonding nozzle (200) reaches a set value, the crystal bonding nozzle (200) is controlled to bond the wafer to the circuit board.
The crystal bonding method according to claim 6, characterized in that, in the crystal bonding step, there are two ways to detect the pressure on the crystal bonding nozzle (200), the first way: detecting the motor (100) When the current of the motor (100) is greater than the preset value, it is judged that the pressure change of the die-bonding nozzle (200) reaches the set value; the second method: the pressure sensor (500) detects the die-bonding nozzle ( 200) The received pressure reaches the set value.
A crystal bonding machine is characterized in that it comprises a swing arm mechanism, a linear solid crystal mechanism, a wafer ring (11), and a thimble (12), and the swing arm mechanism comprises a swing arm (10), a swing arm drive mechanism (13 ), the swing arm driving mechanism (13) is used to drive the swing arm (10) to swing, and the swing arm suction nozzle is installed on the swing arm (10); the wafer ring (11) and the The thimble (12) is installed on the crystal taking position, the blue film is installed on the crystal element ring (11), the crystal element is placed on the blue film, and the thimble (12) is located on the crystal element ring (11) Above, the swing arm suction nozzle is installed upward on the swing arm (10), when the swing arm (10) swings to the crystal picking position, the swing arm suction nozzle is located below the wafer ring (11); The linear die-bonding mechanism includes a linear die-bonding head (20) and a linear die-bonding head drive mechanism (21), and the linear die-bonding head drive mechanism (21) is used to drive the linear die-bonding head (20) to move; The linear die bonding head (20) includes a motor (100), a die bonding nozzle (200), and the motor (100) includes a motor body (101) and a motor spindle connected to the motor body (101) ( 102), the crystal-fixing suction nozzle (200) is connected to the motor main shaft (102); when the swing arm (10) swings to the crystal-taking position, the wafer on the blue film is ejected by the thimble (12) to the swing arm suction nozzle; when the swing arm (10) swings to the transfer position and the linear die-bonding head (20) moves linearly to the transfer position, the die-bonding nozzle of the linear die-bonding head (20) (200) suction the wafer on the suction nozzle of the swing arm; Yuan solid crystal onto the circuit board.
The crystal-bonding machine according to claim 8, characterized in that, the crystal-bonding machine also includes a first camera (30), a crystal-bonding station, and a third camera (50), and the first camera (30) is used to scan the blue film Take pictures of the wafer and the thimble (12), control the movement of the wafer ring (11), align the swing arm suction nozzle, the wafer and the thimble (12), and the thimble (12) pushes the wafer on the blue film downward on the swing arm suction nozzle; the crystal-bonding table is installed at the crystal-bonding position, and the crystal-bonding table is used to carry the circuit board. At the crystal-bonding position, the mobile position of the crystal-bonding table is controlled, and the third camera (50) takes pictures to judge the circuit Whether the crystal-bonding point of the board and the third camera (50) are on the same straight line, if so, the straight-line crystal-bonding head (20) moves to the crystal-bonding position in a straight line so that the crystal-bonding suction nozzle (200) and the crystal-bonding point are at the same On a straight line, if the solid crystal point of the circuit board and the third camera (50) are not on the same straight line, then the position of the crystal solid stage is controlled to be fine-tuned so that the solid crystal point of the circuit board is on the same line as the third camera (50). On a straight line, then, the straight-line die-bonding head (20) linearly moves to the die-bonding position, so that the straight-line die-bonding head (20) is aligned with the crystal-bonding point of the circuit board, and the straight-line die-bonding head (20) will solid crystal on the circuit board; when the swing arm (10) swings to the crystal picking position, the first camera (30) is located under the suction nozzle of the swing arm; when the swing arm (10) and the When the linear die bonding head (20) is located at the transfer position, the linear die bonding head (20) is located above the swing arm suction nozzle; the third camera (50) is located above the crystal bonding table.
The die bonding machine according to claim 8, characterized in that, the die bonding machine further comprises a second camera (40), when the die bonding nozzle (200) of the linear die bonding head (20) sucks the die , control the swing arm (10) to swing from the switching position to the crystal picking position, and then use the second camera (40) to take pictures of the wafers on the linear die bonding head (20) and calculate the angle deviation value of the wafers to control the straight line The die-bonding head (20) rotates so as to correct the angle of the wafer; when the swing arm (10) and the linear die-bonding head (20) are both at the transfer position, the second camera (40) is at the below the swing arm nozzle.
The die bonding machine according to claim 8, characterized in that the die bonding machine further comprises a pressure detection module, and when the die bonding nozzle (200) moves downward, the pressure detection module It is used to detect the pressure on the die-bonding nozzle (200), and when the pressure change of the die-bonding nozzle (200) reaches a set value, the die-bonding nozzle (200) is controlled to bond the crystal to the circuit board.
The die bonding machine according to claim 11, wherein the pressure detection module is used to detect the current change of the motor (100), and when the current of the motor (100) is greater than a preset value, it is judged that the solid state is The pressure change of the crystal suction nozzle (200) reaches the set value.
The die bonding machine according to claim 11, characterized in that, the linear die bonding head (20) further includes a force transmission member (300) and a pressure sensor (500), and when the motor spindle (102) moves, it will drive The force transmission member (300) moves accordingly, the force transmission member (300) will squeeze the pressure sensor (500) when moving, the pressure sensor (500) generates pressure data, and the pressure detection module Judging whether the pressure data has changed, when the pressure data has changed, control the pressure of the die bonding nozzle (200) within the set value, and then control the die bonding nozzle (200) to blow air and put down the wafer for die bonding.
The crystal bonding machine according to claim 9, characterized in that there are at least two swing arms (10), and the number of linear die bonding heads (20) is the same as that of the swing arms (10), each The straight-line solid crystal head (20) is used to cooperate with the corresponding swing arm (10) to complete the wafer transfer, and the number of the wafer ring (11) and the thimble (12) is the same as that of the swing arm (10) ) in the same number, each of the thimbles (12) cooperates with the corresponding swing arm (10) so as to complete the crystal extraction at the corresponding crystal element ring (11).