CN113437005A - Variable-angle die bonding method and system and die bonding machine - Google Patents
Variable-angle die bonding method and system and die bonding machine Download PDFInfo
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- CN113437005A CN113437005A CN202110679902.2A CN202110679902A CN113437005A CN 113437005 A CN113437005 A CN 113437005A CN 202110679902 A CN202110679902 A CN 202110679902A CN 113437005 A CN113437005 A CN 113437005A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67796—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations with angular orientation of workpieces
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/756—Means for supplying the connector to be connected in the bonding apparatus
- H01L2224/75611—Feeding means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/811—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector the bump connector being supplied to the parts to be connected in the bonding apparatus
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- Die Bonding (AREA)
Abstract
The invention provides a variable-angle die bonding method, a variable-angle die bonding system and a die bonding machine, wherein the die bonding method comprises the following steps: step 1: controlling the wafer ring to rotate by a specified angle according to the swing angle of the swing arm; step 2: controlling the swing arm to swing to the position of the wafer ring, controlling the wafer ring to move transversely and/or longitudinally, aligning a single wafer on the wafer ring with a wafer fixing head arranged on the swing arm, and sucking the wafer on the wafer ring through the wafer fixing head arranged on the swing arm; and step 3: and controlling the swing arm to swing to the position of the substrate, controlling the substrate to move transversely and/or longitudinally, aligning the die bonding point on the substrate with the wafer, and fixing the wafer on the substrate through the die bonding head. The invention has the beneficial effects that: according to the invention, under the condition that the length of the swing arm is not increased, the swing arms do not swing for 180 degrees, and the two swing arms can swing according to a set angle, so that the two swing arms can not simultaneously carry out die bonding on one point of the substrate, and thus the substrate with larger width can be rapidly die bonded.
Description
Technical Field
The invention relates to the technical field of die bonding, in particular to a die bonding method and system with a variable angle and a die bonding machine.
Background
On traditional swing arm type die bonding equipment, a swing arm generally runs at 90 degrees or 180 degrees, and the reason is that wafers of a wafer disc are vertically and parallelly arranged, so that die taking and die bonding are convenient. As shown in figure 1, the swing arm rotates by 90 degrees or 180 degrees every time, the wafer positions are basically parallel and vertical, crystal taking and crystal fixing actions are only needed, the wafer does not need to be rotated during crystal taking, and crystal fixing is convenient.
However, this method has a limitation that a larger substrate cannot be secured in the case of a multi-swing arm. To fix bigger base plate, can only increase swing arm length, but increase swing arm length not only increases the cost, moreover, after increasing swing arm length, needs to increase motor power, and speed can not necessarily promote moreover, and this brings bigger challenge for systematic design.
Disclosure of Invention
The invention provides a variable-angle die bonding method, which comprises the following steps:
step 1: controlling the wafer ring to rotate by a specified angle according to the swing angle of the swing arm;
step 2: controlling the swing arm to swing to the position of the wafer ring, controlling the wafer ring to move transversely and/or longitudinally, aligning a single wafer on the wafer ring with a wafer fixing head arranged on the swing arm, and sucking the wafer on the wafer ring through the wafer fixing head arranged on the swing arm to finish the wafer taking action of the single wafer;
and step 3: controlling the swing arm to swing to the position of the substrate, controlling the substrate to move transversely and/or longitudinally to align the die bonding point on the substrate with the wafer, and fixing the wafer on the substrate through the die bonding head to finish the die bonding action of a single wafer;
repeating the step 2 and the step 3 to finish the crystal taking of all wafers and the crystal fixing of all wafers;
the swing arm swings between the wafer ring and the substrate, and the swing angle of the swing arm is neither 90 degrees nor 180 degrees.
As a further improvement of the present invention, the specified angle is ω, ω is 180 — β, and β is an angle from taking out the crystal to fixing the crystal in the swing arm.
As a further improvement of the invention, the angle of beta is calculated by an encoder of a swing arm motor, and the swing arm motor is used for driving the swing arm to swing.
As a further improvement of the invention, the number of the swing arms is at least two, the swing arms take the wafer from the wafer ring to complete the wafer taking action, and the wafer is fixed on one substrate through the at least two swing arms to complete the wafer fixing action.
The invention also provides a variable-angle die bonding system, which comprises:
a rotation angle control module: the swing arm is used for controlling the wafer ring to rotate by a specified angle according to the swing angle of the swing arm;
a crystal taking module: the wafer taking device is used for controlling the swing arm to swing to the position of the wafer ring, controlling the wafer ring to move transversely and/or longitudinally, aligning a single wafer on the wafer ring with the wafer fixing head installed on the swing arm, and sucking the wafer on the wafer ring through the wafer fixing head installed on the swing arm to finish the wafer taking action of the single wafer;
a die bonding module: the wafer fixing device is used for controlling the swing arm to swing to the position of the substrate, controlling the substrate to move transversely and/or longitudinally, aligning the die bonding point on the substrate with the wafer, and fixing the wafer on the substrate through the die bonding head to finish the die bonding action of a single wafer;
the crystal taking module and the crystal fixing module are operated repeatedly to finish the crystal taking of all wafers and the crystal fixing of all wafers;
the swing arm swings between the wafer ring and the substrate, and the swing angle of the swing arm is neither 90 degrees nor 180 degrees.
As a further improvement of the present invention, the specified angle is ω, ω is 180 — β, and β is an angle from taking out the crystal to fixing the crystal in the swing arm.
As a further improvement of the invention, the angle of beta is calculated by an encoder of a swing arm motor, and the swing arm motor is used for driving the swing arm to swing.
As a further improvement of the invention, the number of the swing arms is at least two, the swing arms take the wafer from the wafer ring to complete the wafer taking action, and the wafer is fixed on one substrate through the at least two swing arms to complete the wafer fixing action.
The invention also provides a die bonder, which comprises a swing arm, a wafer ring, a die bonder table, a swing arm motor, a wafer ring driving mechanism and a die bonder table driving mechanism, wherein the die bonder table is used for placing a substrate; when die bonding is carried out, the swing arm is driven by the swing arm motor to swing to the position of the substrate, the swing arm motor drives the die bonding platform to transversely and/or longitudinally move, so that die bonding points on the substrate on the die bonding platform are aligned with the wafer, and the wafer is fixed on the substrate through the die bonding head to finish die bonding of a single wafer; the swing arm swings between the crystal ring and the substrate, the swing angle of the swing arm is neither 90 degrees nor 180 degrees, before crystal taking action, the crystal ring is driven by the crystal ring driving mechanism to rotate by a specified angle, the specified angle is omega, omega is 180-beta, and beta is the angle from crystal taking to crystal fixing of the swing arm.
As a further improvement of the invention, the number of the swing arms is at least two, the swing arms take the wafer from the wafer ring to complete the wafer taking action, the number of the die bonding tables is one, and the wafer is fixed on the substrate of the die bonding table through the at least two swing arms to complete the die bonding action.
The invention has the beneficial effects that: according to the invention, under the condition that the length of the swing arm is not increased, the swing arms do not swing for 180 degrees, and the two swing arms can swing according to a set angle, so that the two swing arms can not simultaneously carry out die bonding on one point of the substrate, and thus the substrate with larger width can be rapidly die bonded.
Drawings
FIG. 1 is a schematic view of a swing angle of a swing arm in the prior art;
FIG. 2 is a schematic diagram of crystal taking and crystal fixing when the swing arm is horizontal;
FIG. 3 is a schematic diagram of crystal taking and crystal fixing when the swing arm is not horizontal;
fig. 4 is a schematic diagram of the calculation of ω.
Detailed Description
The invention discloses a variable-angle die bonding method, which comprises the following steps:
step 1: and controlling the wafer ring to rotate by a specified angle according to the swing angle of the swing arm.
Step 2: the swing arm is controlled to swing to the position of the wafer ring, the wafer ring is controlled to move transversely and/or longitudinally, a single wafer on the wafer ring is aligned with the die attach head mounted on the swing arm, the wafer on the wafer ring is sucked through the die attach head mounted on the swing arm, and the wafer taking action of the single wafer is completed.
And step 3: and controlling the swing arm to swing to the position of the substrate, controlling the substrate to move transversely and/or longitudinally to align the die bonding point on the substrate with the wafer, and fixing the wafer on the substrate through the die bonding head to finish the die bonding action of a single wafer.
Repeating the step 2 and the step 3 to finish the crystal taking of all wafers and the crystal fixing of all wafers; the swing arm swings between the wafer ring and the substrate, and the swing angle of the swing arm is neither 90 degrees nor 180 degrees.
In the invention, the die bonder head can be a suction nozzle, and of course, the die bonder head can also be other mechanisms as long as the wafer can be sucked and fixed.
As shown in fig. 2-4, the swing arm for taking out the wafer is used as a reference line, and the vertical wafer is used as a starting angle, so that the wafer ring must be rotated by an angle to fix the wafer on the substrate, so that the swing arm can be fixed to form the vertical angle after taking out the wafer. Because the swing angle of the swing arm is neither 90 degrees nor 180 degrees, if the wafer ring does not rotate by a specified angle, the fixed wafer after the wafer is taken by the swing arm does not form a vertical angle, and therefore the wafer ring must rotate by the specified angle.
Assuming that the angle from crystal taking to crystal fixing of the swing arm is beta, the beta can be calculated according to the numerical value of a motor feedback encoder. The vertical direction included angle between the swing arm at the die bonding position and the substrate is alpha, and in order to obtain the die accurately, the vertical direction of the wafer where the wafer ring is located and the swing arm also have an included angle theta.
As shown in fig. 2, when the swing arm is perpendicular to the vertical direction of the two-dimensional plane of the wafer ring, that is, the swing arm is horizontal, θ ═ α, at this time, the wafer ring only needs to rotate ω ═ 90- α, and then the wafer ring is driven by the wafer ring driving mechanism to move transversely (x direction) and/or longitudinally (y direction), so that the wafer center point and the swing arm coincide with each other.
As shown in fig. 3, when the swing arm is not in the horizontal direction, because the relative angular position of the swing arm and the wafer is fixed during the crystal taking, the equation of θ ═ α is constant, and how to find the rotation angle ω is considered.
As shown in fig. 4, horizontal lines L1 and L2, BD vertical lines L1 and L2, and a vertical line BC (or BO) of BA are drawn, and an angle between OA and BA is assumed to be λ, so λ is 90 — ψ because ABO is a right angle. Since L1 is parallel to L2, ψ 1 is ψ and ODC is 90 °, so λ 1 is 90- ψ 1 is 90- λ -90- α.
Obviously, to rotate the wafer vertical line from BD to BE, the angle ω -ABC- λ 1- θ 90- (β -90- α) - α 180- β is obtained.
It can be seen that it has no relation to λ, i.e. whether the swing arm is horizontal, and can be obtained by rotating the wafer ring by finding the angle β through the encoder.
When the swing arm is horizontal, ω is 90- α is 90- (β -90) is 180- β.
As a preferred embodiment of the present invention, in the die bonding method of the present invention, there are at least two swing arms, the swing arms take the wafer from the wafer ring to complete the die-taking operation, and the at least two swing arms fix the wafer on one substrate to complete the die bonding operation. One swing arm can correspond to a plurality of wafer rings; or, one swing arm corresponds to one wafer ring, for example, two wafer rings are provided, namely, a wafer ring a and a wafer ring B, and two swing arms are provided, namely, a swing arm a and a swing arm B; taking the wafer from the wafer ring A by the swing arm A, and then fixing the wafer onto a substrate; and taking the wafer from the wafer ring B by the swing arm B, and then fixing the wafer onto a substrate.
The invention also discloses a die bonder, which comprises a swing arm, a wafer ring, a die bonder table, a swing arm motor, a wafer ring driving mechanism and a die bonder table driving mechanism, wherein the die bonder table is used for placing a substrate, when die bonding is carried out, the swing arm motor drives the swing arm to swing to the position of the wafer ring, the wafer ring driving mechanism drives the wafer ring to move transversely and/or longitudinally, so that a single wafer on the wafer ring is aligned with a die bonder head arranged on the swing arm, and the die bonder head arranged on the swing arm absorbs the wafer on the wafer ring to finish the die bonding action of the single wafer; when die bonding is carried out, the swing arm is driven by the swing arm motor to swing to the position of the substrate, the swing arm motor drives the die bonding platform to transversely and/or longitudinally move, so that die bonding points on the substrate on the die bonding platform are aligned with the wafer, and the wafer is fixed on the substrate through the die bonding head to finish die bonding of a single wafer; the swing arm swings between the crystal ring and the substrate, the swing angle of the swing arm is neither 90 degrees nor 180 degrees, before crystal taking action, the crystal ring is driven by the crystal ring driving mechanism to rotate by a specified angle, the specified angle is omega, omega is 180-beta, and beta is the angle from crystal taking to crystal fixing of the swing arm.
As a preferred embodiment of the die bonder, the number of the swing arms is at least two, the swing arms take the wafer from the wafer ring to complete the die bonding operation, and the wafer is fixed on the substrate of the die bonding table through the at least two swing arms to complete the die bonding operation. One swing arm can correspond to a plurality of wafer rings; or, one swing arm corresponds to one wafer ring, for example, two wafer rings are provided, i.e., a first wafer ring and a second wafer ring are provided, and two swing arms are provided, i.e., a first swing arm and a second swing arm are provided; taking the wafer from the first wafer ring by the first swing arm, and then fixing the wafer onto a substrate; and the second swing arm takes the wafer from the second wafer ring and then fixes the wafer on the substrate.
According to the invention, under the condition that the length of the swing arm is not increased, the swing arm does not swing 180 degrees, for example, a double-swing-arm die bonder, the swing arm swings 160 degrees, and two swing arms can not fix a point at the same time, so that the problem of the width of the substrate can be solved.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A variable-angle die bonding method is characterized by comprising the following steps:
step 1: controlling the wafer ring to rotate by a specified angle according to the swing angle of the swing arm;
step 2: controlling the swing arm to swing to the position of the wafer ring, controlling the wafer ring to move transversely and/or longitudinally, aligning a single wafer on the wafer ring with a wafer fixing head arranged on the swing arm, and sucking the wafer on the wafer ring through the wafer fixing head arranged on the swing arm to finish the wafer taking action of the single wafer;
and step 3: controlling the swing arm to swing to the position of the substrate, controlling the substrate to move transversely and/or longitudinally to align the die bonding point on the substrate with the wafer, and fixing the wafer on the substrate through the die bonding head to finish the die bonding action of a single wafer;
repeating the step 2 and the step 3 to finish the crystal taking of all wafers and the crystal fixing of all wafers;
the swing arm swings between the wafer ring and the substrate, and the swing angle of the swing arm is neither 90 degrees nor 180 degrees.
2. The die bonding method according to claim 1, wherein the specified angle is ω, ω -180- β, β being an angle from taking a die to bonding a die by a swing arm.
3. The die bonding method according to claim 2, wherein the angle β is calculated by an encoder of a swing arm motor, and the swing arm motor is used for driving the swing arm to swing.
4. The die bonding method according to any one of claims 1 to 3, wherein the number of the swing arms is at least two, the swing arms take the wafer from the wafer ring to complete the die-taking action, and the at least two swing arms fix the wafer on a substrate to complete the die bonding action.
5. A variable-angle die bonding system is characterized by comprising:
a rotation angle control module: the swing arm is used for controlling the wafer ring to rotate by a specified angle according to the swing angle of the swing arm;
a crystal taking module: the wafer taking device is used for controlling the swing arm to swing to the position of the wafer ring, controlling the wafer ring to move transversely and/or longitudinally, aligning a single wafer on the wafer ring with the wafer fixing head installed on the swing arm, and sucking the wafer on the wafer ring through the wafer fixing head installed on the swing arm to finish the wafer taking action of the single wafer;
a die bonding module: the wafer fixing device is used for controlling the swing arm to swing to the position of the substrate, controlling the substrate to move transversely and/or longitudinally, aligning the die bonding point on the substrate with the wafer, and fixing the wafer on the substrate through the die bonding head to finish the die bonding action of a single wafer;
the crystal taking module and the crystal fixing module are operated repeatedly to finish the crystal taking of all wafers and the crystal fixing of all wafers;
the swing arm swings between the wafer ring and the substrate, and the swing angle of the swing arm is neither 90 degrees nor 180 degrees.
6. The die bonding system according to claim 5, wherein the specified angle is ω, ω -180- β, β being an angle from swing arm to die bonding.
7. The die bonding system according to claim 6, wherein the angle β is calculated by an encoder of a swing arm motor, and the swing arm motor is used for driving the swing arm to swing.
8. The die bonding system according to any one of claims 5 to 7, wherein the number of the swing arms is at least two, the swing arms take the wafer from the wafer ring to complete the die-taking action, and the at least two swing arms fix the wafer on a substrate to complete the die bonding action.
9. A die bonder comprises a swing arm, a wafer ring, a die bonder table, a swing arm motor, a wafer ring driving mechanism and a die bonder table driving mechanism, wherein the die bonder table is used for placing a substrate, when die bonding is performed, the swing arm is driven by the swing arm motor to swing to the position of a wafer ring, the wafer ring is driven by the wafer ring driving mechanism to move transversely and/or longitudinally, a single wafer on the wafer ring is aligned with a die bonder head installed on the swing arm, and the wafer on the wafer ring is sucked by the die bonder head installed on the swing arm, so that the die bonding operation of the single wafer is completed; when die bonding is carried out, the swing arm is driven by the swing arm motor to swing to the position of the substrate, the swing arm motor drives the die bonding platform to transversely and/or longitudinally move, so that die bonding points on the substrate on the die bonding platform are aligned with the wafer, and the wafer is fixed on the substrate through the die bonding head to finish die bonding of a single wafer; the method is characterized in that: the swing arm swings between the crystal ring and the substrate, the swing angle of the swing arm is neither 90 degrees nor 180 degrees, before crystal taking action, the crystal ring is driven by the crystal ring driving mechanism to rotate by a specified angle, the specified angle is omega, omega is 180-beta, and beta is the angle from crystal taking to crystal fixing of the swing arm.
10. The die bonder of claim 9, wherein there are at least two swing arms, the swing arms pick up the wafer from the wafer ring to complete the die bonding operation, and the at least two swing arms fix the wafer on the substrate of the die bonder table to complete the die bonder operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110679902.2A CN113437005A (en) | 2021-06-18 | 2021-06-18 | Variable-angle die bonding method and system and die bonding machine |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110679902.2A CN113437005A (en) | 2021-06-18 | 2021-06-18 | Variable-angle die bonding method and system and die bonding machine |
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| CN113437005A true CN113437005A (en) | 2021-09-24 |
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| CN202110679902.2A Pending CN113437005A (en) | 2021-06-18 | 2021-06-18 | Variable-angle die bonding method and system and die bonding machine |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113837950A (en) * | 2021-09-30 | 2021-12-24 | 深圳市卓兴半导体科技有限公司 | Crystal fillet degree correction method, system and storage medium |
| WO2023050041A1 (en) * | 2021-09-28 | 2023-04-06 | 深圳市卓兴半导体科技有限公司 | Die bonding method and die bonding machine |
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| JP2012243920A (en) * | 2011-05-18 | 2012-12-10 | Sharp Corp | Chip sorting device and chip sorting method |
| CN106505141A (en) * | 2016-12-29 | 2017-03-15 | 深圳市微恒自动化设备有限公司 | A kind of bonder and die-bonding method |
| US20180286728A1 (en) * | 2017-01-26 | 2018-10-04 | Brooks Automation, Inc. | Method and apparatus for substrate transport apparatus position compensation |
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2021
- 2021-06-18 CN CN202110679902.2A patent/CN113437005A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012243920A (en) * | 2011-05-18 | 2012-12-10 | Sharp Corp | Chip sorting device and chip sorting method |
| CN106505141A (en) * | 2016-12-29 | 2017-03-15 | 深圳市微恒自动化设备有限公司 | A kind of bonder and die-bonding method |
| US20180286728A1 (en) * | 2017-01-26 | 2018-10-04 | Brooks Automation, Inc. | Method and apparatus for substrate transport apparatus position compensation |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023050041A1 (en) * | 2021-09-28 | 2023-04-06 | 深圳市卓兴半导体科技有限公司 | Die bonding method and die bonding machine |
| CN113837950A (en) * | 2021-09-30 | 2021-12-24 | 深圳市卓兴半导体科技有限公司 | Crystal fillet degree correction method, system and storage medium |
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