WO2023045171A1 - 一种二硒化钼/InGaN多光谱光电探测器及其制备方法与应用 - Google Patents

一种二硒化钼/InGaN多光谱光电探测器及其制备方法与应用 Download PDF

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WO2023045171A1
WO2023045171A1 PCT/CN2021/143373 CN2021143373W WO2023045171A1 WO 2023045171 A1 WO2023045171 A1 WO 2023045171A1 CN 2021143373 W CN2021143373 W CN 2021143373W WO 2023045171 A1 WO2023045171 A1 WO 2023045171A1
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layer
ingan
mose
barrier
metal
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李国强
孔德麒
王文樑
陈亮
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South China University of Technology SCUT
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10F71/1274—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP comprising nitrides, e.g. InGaN or InGaAlN
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    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
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    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/288—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
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    • H—ELECTRICITY
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H10F77/12485—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP comprising nitride compounds, e.g. InGaN
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of visible light detectors, in particular to a molybdenum diselenide/InGaN multi-spectral photodetector and its preparation method and application.
  • Group III nitride semiconductor materials have excellent optical, electrical, thermal, chemical, and mechanical properties. Therefore, group III nitride photoelectric devices and power devices have received extensive attention and key research by researchers.
  • InGaN materials have good physical and chemical properties. It has high electron mobility, good thermal stability, and good chemical stability.
  • the continuous adjustment of the forbidden band width from 3.4eV to 0.7eV can be realized by adjusting the composition of In in the alloy, so that the InGaN detector can realize continuous detection covering the entire visible light band.
  • the InGaN detector Compared with the photomultiplier tube, the InGaN detector has a volume Small, easy to carry, easy to integrate, high breakdown electric field (>1MV/cm), low working voltage, energy saving and environmental protection, no need for filter system and other advantages.
  • the object of the present invention is to provide a molybdenum diselenide/InGaN multispectral photodetector and a preparation method thereof.
  • the MoSe 2 /InGaN multispectral photodetector of the present invention has the following advantages: First, through the AlN/AlGaN/GaN buffer layer, dislocations are reduced, stress is released, and the defect density is reduced from 10 8 to 10 5 , making the grown InGaN The material quality is better; second, grow high-quality two-dimensional MoSe 2 material on InGaN, and the grown MoSe 2 has a single-layer structure with a thickness as low as 1nm; by adopting the MoSe 2 /InGaN functional layer structure, the detector can realize blue light, red light Optical multispectral photodetection.
  • MoSe 2 has good conductivity and light transmission.
  • the MoSe 2 /InGaN structure has higher carrier injection efficiency in the blue light band, which enhances the responsivity of InGaN blue light detectors. , faster response time.
  • Another object of the present invention is to provide the application of the above molybdenum diselenide/InGaN multispectral photodetector.
  • the molybdenum diselenide/InGaN multi-spectrum photodetector is used for multi-spectrum photodetection of blue light and/or red light.
  • a molybdenum diselenide/InGaN multispectral photodetector comprising a substrate, a buffer layer, an InGaN layer and a MoSe 2 layer arranged in sequence from bottom to top, MoSe 2 The layer partially covers the InGaN layer;
  • the photodetector also includes a barrier layer and an electrode layer; the barrier layer is arranged on the InGaN layer not covered by the MoSe2 layer and part of the MoSe2 layer, and the electrode layer is arranged on the barrier layer and covers part of the MoSe2 layer bare part.
  • the InGaN layer and the MoSe 2 layer form a MoSe 2 /InGaN functional layer.
  • the MoSe 2 layer partially covering the InGaN layer means that the MoSe 2 layer forms a stepped horizontal platform on the InGaN layer.
  • the barrier layer being disposed on the InGaN layer not covered by the MoSe 2 layer and part of the MoSe 2 layer means that the barrier layer is disposed on a stepped horizontal platform formed on the InGaN layer and part of the MoSe 2 layer.
  • the barrier layer is an Al 2 O 3 barrier layer.
  • the buffer layer is an AlN layer, an AlGaN layer and a GaN layer arranged in sequence from bottom to top, the AlN layer is arranged on the substrate; the InGaN layer is arranged on the GaN layer.
  • the thickness of the InGaN layer is 100-200 nm, and the thickness of the MoSe 2 layer is 1-2 nm.
  • the substrate is a Si substrate.
  • the thicknesses of the AlN layer, the AlGaN layer and the GaN layer are respectively 350-450 nm, 650-700 nm, and 4-5 ⁇ m.
  • the MoSe 2 layer is located in the middle of the upper surface of the InGaN layer, that is, both ends of the MoSe 2 layer form stepped horizontal platforms on the InGaN layer.
  • Barrier layers are respectively provided on the two stepped horizontal platforms and the adjacent part of the MoSe 2 layer.
  • An electrode layer is arranged on the two barrier layers and part of the MoSe 2 layer.
  • the shape of the electrode layer is an interdigitated electrode; the electrode layer is a metal electrode layer, specifically a Ti/Au metal layer, and the Ti/Au metal layer is a Ti metal layer and an Au metal layer arranged from bottom to top.
  • the Ti layer is close to the barrier layer; the thickness of the Ti metal layer is 20-30 nm, and the thickness of the Au metal layer is 100-110 nm.
  • the preparation method of the MoSe 2 /InGaN multispectral photodetector comprises the following steps:
  • a buffer layer is grown on the substrate by the MOCVD method, and then an InGaN layer and a MoSe 2 layer are sequentially grown on the buffer layer by the MOCVD method;
  • MoSe 2 layer is etched so that MoSe 2 layer forms a stepped horizontal platform on the InGaN layer; photolithography is performed on the stepped horizontal platform formed on the InGaN layer and the MoSe 2 layer (that is, the surface is uniform Glue, drying, exposure, development and oxygen ion treatment), to obtain the region of the evaporation barrier layer, and prepare the Al 2 O 3 barrier layer through the evaporation process;
  • Photolithography is carried out on the Al 2 O 3 barrier layer (i.e. surface leveling, drying, exposure, development and oxygen ion treatment on the Al 2 O 3 barrier layer) to obtain the area where the metal electrode is evaporated;
  • the plating process vapor-deposits metal electrodes on the Al 2 O 3 barrier layer.
  • the temperatures for epitaxial growth of AlN layer, AlGaN layer and GaN layer on the substrate from bottom to top by MOCVD method are 1100-1200°C, 1100-1200°C and 1000-1150°C respectively.
  • the N 2 gas flow rate is 30-40 sccm.
  • the temperature for growing the MoSe 2 /InGaN layer on the buffer layer by MOCVD is 600-750°C.
  • Photolithography conditions drying time is 40-50s, exposure time is 5-10s, developing time is 40-50s, oxygen ion treatment time is 2-3min.
  • the evaporation rates of the Al 2 O 3 barrier layer and the metal layer electrode are respectively 0.23-0.28 nm/min.
  • the MoSe 2 /InGaN multi-spectrum photodetector is used for multi-spectrum photodetection of blue light and/or red light.
  • the present invention has the following beneficial effects and advantages:
  • the AlN/AlGaN/GaN buffer layer is grown on the substrate by the MOCVD high-temperature epitaxy method, and then the MoSe 2 /InGaN functional layer is grown on the buffer layer in combination with the MOCVD low-temperature epitaxy method, and then the photolithography evaporation process , on the MoSe 2 /InGaN functional layer, the Al 2 O 3 barrier layer and the Ti/Au electrode were fabricated from bottom to top, and the MoSe 2 /InGaN multispectral photodetector was realized.
  • the preparation method of the invention has the characteristics of simple process, time saving, high efficiency and low energy consumption, and is beneficial to large-scale production.
  • a MoSe 2 /InGaN multi-spectrum photodetector of the present invention realizes blue light and red light multi-spectrum photodetection through the MoSe 2 /InGaN functional layer; on this basis, the detector and array structure are optimized to effectively improve the response speed.
  • a MoSe 2 /InGaN multispectral photodetector of the present invention introduces a two-dimensional MoSe 2 layer, and the MoSe 2 /InGaN structure in the blue light band has a higher carrier injection efficiency, which improves the quantum efficiency in the blue light band , to achieve high-sensitivity and high-bandwidth detection.
  • Figure 1 is a schematic cross-sectional view of the structure of the MoSe 2 /InGaN multispectral photodetector provided by the present invention; wherein, 1-substrate; 2-buffer layer; 3-InGaN layer; 4-MoSe 2 layer; 5-Al 2 O 3 Barrier layer; 6-metal layer electrode;
  • Fig. 2 is a schematic plan view of the electrode structure of the MoSe2 /InGaN multispectral photodetector provided by the present invention
  • FIG. 3 is an IV curve diagram of the MoSe 2 /InGaN multispectral photodetector prepared in Example 1.
  • FIG. 3 is an IV curve diagram of the MoSe 2 /InGaN multispectral photodetector prepared in Example 1.
  • the MoSe 2 /InGaN multispectral photodetector sectional structure schematic diagram of the present invention is shown in Fig. 1, comprises substrate 1, buffer layer 2, InGaN layer 3 and MoSe 2 layer 4, MoSe 2 layer arranged in sequence from bottom to top A stepped horizontal platform is formed on the InGaN layer;
  • the photodetector also includes a barrier layer 5 and an electrode layer 6; the barrier layer 5 is arranged on the stepped horizontal platform formed on the InGaN layer and part of the MoSe 2 layer, and the electrode layer 6 is arranged on the barrier layer 5 And cover part of the bare part on the MoSe 2 layer 4 .
  • the InGaN layer and the MoSe 2 layer form a MoSe 2 /InGaN functional layer.
  • the barrier layer 5 is an Al 2 O 3 barrier layer.
  • the buffer layer 2 is an AlN layer, an AlGaN layer and a GaN layer arranged in sequence from bottom to top, and the AlN layer is arranged on the substrate 1; the InGaN layer 3 is arranged on the GaN layer.
  • the thickness of the InGaN layer is 100-200 nm, and the thickness of the MoSe 2 layer is 1-2 nm.
  • the substrate is a Si substrate.
  • the thicknesses of the AlN layer, the AlGaN layer and the GaN layer are respectively 350-450 nm, 650-700 nm, and 4-5 ⁇ m.
  • Both ends of the MoSe 2 layer 4 form stepped horizontal platforms on the InGaN layer 3 (that is, the MoSe 2 layer 4 is disposed in the middle of the InGaN layer 3 ).
  • This embodiment provides a MoSe 2 /InGaN multispectral photodetector, including a substrate, a buffer layer, an InGaN layer, and a MoSe 2 layer arranged in sequence from bottom to top, and the MoSe 2 layer forms a step-like structure on the InGaN layer.
  • the horizontal platform; the photodetector also includes a barrier layer and an electrode layer; the barrier layer is arranged on the stepped horizontal platform formed on the InGaN layer and part of the MoSe 2 layer, and the electrode layer is arranged on the barrier layer and covers Part of the MoSe2 layer is exposed.
  • Both ends of the MoSe 2 layer form step-like horizontal platforms on the InGaN layer (that is, the MoSe 2 layer is arranged in the middle of the InGaN layer).
  • Barrier layers are respectively provided on the two stepped horizontal platforms and the adjacent part of the MoSe 2 layer.
  • An electrode layer is arranged on the two barrier layers and part of the MoSe 2 layer.
  • the substrate is a Si substrate; the thickness of the InGaN layer is 150 nm, and the thickness of the MoSe 2 layer is 1.5 nm.
  • the thicknesses of the AlN layer, the AlGaN layer, and the GaN layer are 350 nm, 675 nm, and 4.5 ⁇ m, respectively.
  • the shape of the electrode is an interdigitated electrode, and the electrode layer is a metal electrode layer, specifically a Ti/Au metal layer, and the Ti/Au metal layer is a Ti metal layer and an Au metal layer arranged from bottom to top. layer.
  • the Ti layer is close to the barrier layer; the thickness of the Ti metal layer is 25nm, and the thickness of the Au metal layer is 105nm.
  • the preparation method of the MoSe 2 /InGaN multispectral photodetector comprises the following steps:
  • a buffer layer is grown on the substrate by the MOCVD method, and then an InGaN layer and a MoSe 2 layer are sequentially grown on the buffer layer by the MOCVD method;
  • MoSe 2 layer is etched so that MoSe 2 layer forms a stepped horizontal platform on the InGaN layer; photolithography is performed on the stepped horizontal platform formed on the InGaN layer and the MoSe 2 layer (that is, the surface is uniform Glue, drying, exposure, development and oxygen ion treatment), to obtain the region of the evaporation barrier layer, and prepare the Al 2 O 3 barrier layer through the evaporation process;
  • Photolithography is carried out on the Al 2 O 3 barrier layer (i.e. surface leveling, drying, exposure, development and oxygen ion treatment on the Al 2 O 3 barrier layer) to obtain the area where the metal electrode is evaporated;
  • the plating process vapor-deposits metal electrodes on the Al 2 O 3 barrier layer.
  • the buffer layer refers to the epitaxial growth of AlN layer, AlGaN layer and GaN layer on the substrate from bottom to top by MOCVD method, and the temperatures are respectively 1150°C, 1150°C and 1100°C.
  • the N2 gas flow is 35 sccm.
  • the temperature for growing the MoSe 2 /InGaN layer on the buffer layer by MOCVD is 700°C.
  • the respective drying time is 45s
  • the exposure time is 8s
  • the developing time is 45s
  • the oxygen ion treatment time is 2.5min.
  • the vapor deposition rates of the Al 2 O 3 barrier layer and the metal layer electrodes are each 0.25 nm/min.
  • Fig. 3 is the IV curve of the MoSe 2 /InGaN multi-spectral photodetector obtained in this example. It can be seen from the figure that the fabricated electrode is a Schottky contact. Under 5V bias and 650nm red light irradiation, the photocurrent reaches 21 ⁇ A; 450nm Under blue light irradiation, the photocurrent was 50 ⁇ A. The detector has a high-speed response in the blue and red light bands.
  • This embodiment provides a MoSe 2 /InGaN multispectral photodetector, including a substrate, a buffer layer, an InGaN layer and a MoSe 2 layer arranged in sequence from bottom to top, and the MoSe 2 layer forms a stepped level on the InGaN layer Mesa; the photodetector also includes a barrier layer and an electrode layer; the barrier layer is arranged on the stepped horizontal platform formed on the InGaN layer and part of the MoSe 2 layer, and the electrode layer is arranged on the barrier layer and covers part The bare part on the MoSe2 layer.
  • the substrate is a Si substrate; the thickness of the InGaN layer is 100 nm, and the thickness of the MoSe 2 layer is 1.0 nm.
  • the thicknesses of the AlN layer, the AlGaN layer, and the GaN layer are 350 nm, 650 nm, and 4.0 ⁇ m, respectively.
  • the shape of the electrode is an interdigitated electrode, and the electrode layer is a metal electrode layer, specifically a Ti/Au metal layer, and the Ti/Au metal layer is a Ti metal layer and an Au metal layer arranged from bottom to top. layer.
  • the Ti layer is close to the barrier layer; the thickness of the Ti metal layer is 20nm, and the thickness of the Au metal layer is 100nm.
  • the preparation method of the MoSe 2 /InGaN multispectral photodetector comprises the following steps:
  • a buffer layer is grown on the substrate by the MOCVD method, and then an InGaN layer and a MoSe 2 layer are sequentially grown on the buffer layer by the MOCVD method;
  • MoSe 2 layer is etched so that MoSe 2 layer forms a stepped horizontal platform on the InGaN layer; photolithography is performed on the stepped horizontal platform formed on the InGaN layer and the MoSe 2 layer (that is, the surface is uniform Glue, drying, exposure, development and oxygen ion treatment), to obtain the region of the evaporation barrier layer, and prepare the Al 2 O 3 barrier layer through the evaporation process;
  • Photolithography is carried out on the Al 2 O 3 barrier layer (i.e. surface leveling, drying, exposure, development and oxygen ion treatment on the Al 2 O 3 barrier layer) to obtain the area where the metal electrode is evaporated;
  • the plating process vapor-deposits metal electrodes on the Al 2 O 3 barrier layer.
  • the buffer layer means that an AlN layer, an AlGaN layer and a GaN layer are epitaxially grown on the substrate from bottom to top by MOCVD method, and the temperatures for growing the AlN layer, the AlGaN layer and the GaN layer are respectively 1100°C, 1100°C and 1050°C .
  • the N2 gas flow is 30 sccm.
  • the temperature for growing InGaN layer and MoSe 2 layer on the buffer layer by MOCVD method is 650°C.
  • the respective drying time in steps (2) and (3) is 40s, the exposure time is 5s, the developing time is 40s, and the oxygen ion treatment time is 2.0min.
  • the vapor deposition rates of the Al 2 O 3 barrier layer and the metal layer electrodes were 0.23 nm/min, respectively.
  • the MoSe 2 /InGaN multispectral photodetector prepared in this embodiment was tested.
  • This embodiment provides a MoSe 2 /InGaN multispectral photodetector, including a substrate, a buffer layer, an InGaN layer and a MoSe 2 layer arranged in sequence from bottom to top, and the MoSe 2 layer forms a stepped level on the InGaN layer Mesa; the photodetector also includes a barrier layer and an electrode layer; the barrier layer is arranged on the stepped horizontal platform formed on the InGaN layer and part of the MoSe 2 layer, and the electrode layer is arranged on the barrier layer and covers part The bare part on the MoSe2 layer.
  • the substrate is a Si substrate; the thickness of the InGaN layer is 200 nm, and the thickness of the MoSe 2 layer is 2.0 nm.
  • the thicknesses of the AlN layer, the AlGaN layer, and the GaN layer are 450 nm, 750 nm, and 5.0 ⁇ m, respectively.
  • the shape of the electrode is an interdigitated electrode, and the electrode layer is a metal electrode layer, specifically a Ti/Au metal layer, and the Ti/Au metal layer is a Ti metal layer and an Au metal layer arranged from bottom to top. layer.
  • the Ti layer is close to the barrier layer; the thickness of the Ti metal layer is 20nm, and the thickness of the Au metal layer is 100nm.
  • the preparation method of the MoSe 2 /InGaN multispectral photodetector comprises the following steps:
  • a buffer layer is grown on the substrate by the MOCVD method, and then an InGaN layer and a MoSe 2 layer are sequentially grown on the buffer layer by the MOCVD method;
  • MoSe 2 layer is etched so that MoSe 2 layer forms a stepped horizontal platform on the InGaN layer; photolithography is performed on the stepped horizontal platform formed on the InGaN layer and the MoSe 2 layer (that is, the surface is uniform Glue, drying, exposure, development and oxygen ion treatment), to obtain the region of the evaporation barrier layer, and prepare the Al 2 O 3 barrier layer through the evaporation process;
  • Photolithography is carried out on the Al 2 O 3 barrier layer (i.e. surface leveling, drying, exposure, development and oxygen ion treatment on the Al 2 O 3 barrier layer) to obtain the area where the metal electrode is evaporated;
  • the plating process vapor-deposits metal electrodes on the Al 2 O 3 barrier layer.
  • the buffer layer means that an AlN layer, an AlGaN layer and a GaN layer are epitaxially grown on the substrate from bottom to top by MOCVD method, and the temperatures for growing the AlN layer, AlGaN layer and GaN layer are 1200°C, 1200°C and 1150°C respectively. .
  • the flow rate of N2 gas is 40 sccm.
  • the temperature for growing the InGaN layer and the MoSe 2 layer on the buffer layer by MOCVD method is 750° C. respectively.
  • the drying time is 50s
  • the exposure time is 10s
  • the developing time is 50s
  • the oxygen ion treatment time is 3.0min.
  • the vapor deposition rates of the Al 2 O 3 barrier layer and the metal layer electrodes are 0.28 nm/min respectively.
  • the MoSe 2 /InGaN multispectral photodetector prepared in this embodiment was tested.

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Abstract

本发明属于光电探测器的技术领域，公开了一种二硒化钼/InGaN多光谱光电探测器及其制备方法与应用。所述光电探测器包括从下到上依次排布的衬底、缓冲层、InGaN层和MoSe 2层，MoSe 2层部分覆盖InGaN层；光电探测器还包括阻隔层和电极层；阻隔层设置在未被MoSe 2层覆盖的InGaN层及部分MoSe 2层上，电极层设置在阻隔层上并覆盖部分MoSe 2层上裸露部分。本发明还公开了探测器的制备方法。本发明的探测器实现红光与蓝光同时探测；在探测芯片表面进行增敏微纳结构设计，提升了蓝光与红光波段的量子效率，增强蓝光与红光谐振吸收，实现高灵敏度高带宽探测。本发明的探测器用于蓝光和/或红光多频谱光电探测。

Description

一种二硒化钼/InGaN多光谱光电探测器及其制备方法与应用 技术领域
本发明涉及可见光探测器领域，具体涉及一种二硒化钼/InGaN多光谱光电探测器及其制备方法与应用。
背景技术
III族氮化物半导体材料拥有优良的光学、电学、热学、化学、机械性能，因此，III族氮化物光电器件和功率器件得到了科研人员的广泛关注和重点研究。
作为第三代半导体材料研究热点之一的InGaN材料拥有良好的物理化学性质。它的电子迁移率高、热稳定性好、化学稳定性好。可以通过调整合金中In的组分，实现禁带宽度从3.4eV到0.7eV的连续调节，从而使得InGaN探测器能够实现覆盖整个可见光波段的连续探测，相比光电倍增管，InGaN探测器具有体积小、易携带、易集成、击穿电场高(＞1MV/cm)、工作电压低、节能环保、无需滤光系统等优势。
虽然InGaN基探测器材料生长研究取得了一定进展，但是到目前为止还没有实现商品转化。制约InGaN探测器发展和应用的根本问题是材料质量问题。一方面，由于InGaN和Si衬底之间存在着较大的晶格失配(＞16.9％)，因此在InGaN外延层中也容易产生较高密度的位错。另一方面，由于InGaN材料容易发生分相，特别In组分越高越容易发生分相。同时，在GaN材料上生长InGaN，由于InGaN与GaN之间存在晶格失配，随着厚度增加会发生弛豫，产生缺陷，这些都可以作为俘获载流子。从而降低载流子输运特性，导致InGaN探测器的量子效率下降，影响响应速和灵敏度等。
发明内容
为了解决以上问题，本发明的目的在于提供一种二硒化钼/InGaN多光谱光电探测器及其制备方法。本发明的MoSe 2/InGaN多光谱光电探测器具有以下优点：一，通过AlN/AlGaN/GaN缓冲层，降低位错，释放应力，使缺陷密度由10 8减小到10 5，使生长的InGaN材料质量更好；二，在InGaN上生长高质量 二维MoSe 2材料，生长的MoSe 2为单层结构，厚度低致1nm；通过采用MoSe 2/InGaN功能层结构，使探测器实现蓝光，红光多频谱光电探测。同时二维MoSe 2拥有良好的导电性与透光性，相比于传统InGaN光电探测器，在蓝光波段MoSe 2/InGaN结构有更高的载流子注入效率，增强InGaN蓝光探测器的响应度，响应时间更快。
本发明的另一目的在于提供上述二硒化钼/InGaN多光谱光电探测器的应用。所述二硒化钼/InGaN多光谱光电探测器用于蓝光和/或红光多频谱光电探测。
本发明的目的通过以下技术方案实现：
一种二硒化钼/InGaN多光谱光电探测器(即MoSe 2/InGaN多光谱光电探测器)，包括从下到上依次排布的衬底、缓冲层、InGaN层和MoSe 2层，MoSe 2层部分覆盖InGaN层；
所述光电探测器还包括阻隔层和电极层；所述阻隔层设置在未被MoSe 2层覆盖的InGaN层以及部分MoSe 2层上，所述电极层设置在阻隔层上并覆盖部分MoSe 2层上裸露部分。
所述InGaN层和MoSe 2层形成MoSe 2/InGaN功能层。
所述MoSe 2层部分覆盖InGaN层是指MoSe 2层在InGaN层上形成台阶状的水平台面。所述阻隔层设置在未被MoSe 2层覆盖的InGaN层以及部分MoSe 2层上是指阻隔层设置在InGaN层上形成台阶状的水平台面上以及部分MoSe 2层上。
所述阻隔层为Al 2O 3阻隔层。
所述缓冲层为从下到上依次排布的AlN层、AlGaN层和GaN层，AlN层设置在衬底上；InGaN层设置在GaN层上。
所述InGaN层的厚度为100～200nm，MoSe 2层的厚度为1～2nm。
衬底为Si衬底。
所述AlN层、AlGaN层和GaN层的厚度分别为350～450nm、650～700nm、4～5μm。
所述MoSe 2层位于InGaN层上表面的中部即MoSe 2层两端在InGaN层上都形成台阶状的水平台面。
两台阶状的水平台面以及相邻的部分MoSe 2层上分别设有阻隔层。两阻隔层上及部分MoSe 2层上设有电极层。
所述电极层的形状为叉指电极；所述电极层为金属电极层，具体为Ti/Au金属层，Ti/Au金属层为从下到上排布的Ti金属层和Au金属层。Ti层靠近阻隔层；Ti金属层的厚度为20～30nm、Au金属层的厚度为100～110nm。
所述MoSe 2/InGaN多光谱光电探测器的制备方法，包括以下步骤：
(1)采用MOCVD方法在衬底上生长缓冲层，再采用MOCVD方法在缓冲层上依次生长InGaN层、MoSe 2层；
(2)将MoSe 2层进行刻蚀，使得MoSe 2层在InGaN层上形成台阶状的水平台面；在在InGaN层上形成台阶状的水平台面上以及MoSe 2层上进行光刻(即表面匀胶、烘干、曝光、显影和氧离子处理)，获得蒸镀阻隔层的区域，通过蒸镀工艺制备Al 2O 3阻隔层；
(3)在Al 2O 3阻隔层上进行光刻(即在Al 2O 3阻隔层上表面匀胶、烘干、曝光、显影和氧离子处理)，获得蒸镀金属电极的区域；通过蒸镀工艺将金属电极蒸镀在Al 2O 3阻隔层上。
采用MOCVD方法在衬底上从下到上依次外延生长AlN层、AlGaN层和GaN层的温度分别为1100～1200℃、1100～1200℃和1000～1150℃。N 2气流量为30～40sccm。
采用MOCVD方法在缓冲层上生长MoSe 2/InGaN层的温度为600～750℃。
光刻的条件：烘干时间为40～50s，曝光时间为5～10s，显影时间为40～50s，氧离子处理时间为2～3min。
Al 2O 3阻隔层与金属层电极的蒸镀速率各自为0.23～0.28nm/min。
所述MoSe 2/InGaN多光谱光电探测器用于蓝光和/或红光多频谱光电探测。
和现有技术相比，本发明具有以下有益效果和优点：
(1)本发明先采用MOCVD高温外延方法在衬底上生长AlN/AlGaN/GaN缓冲层，再结合MOCVD低温外延方法，在缓冲层上生长MoSe 2/InGaN功能层，再通过光刻蒸镀工艺，在MoSe 2/InGaN功能层上由下至上制作Al 2O 3阻隔层与Ti/Au电极，实现了MoSe 2/InGaN多光谱光电探测器。本发明的制备方法具有工 艺简单、省时高效以及能耗低的特点，有利于规模化生产。
(2)本发明的一种MoSe 2/InGaN多光谱光电探测器通过MoSe 2/InGaN功能层，实现蓝光，红光多频谱光电探测；在此基础上优化设计探测器与阵列结构，有效提高响应速度。
(3)本发明的一种MoSe 2/InGaN多光谱光电探测器通过引入二维MoSe 2层，在蓝光波段MoSe 2/InGaN结构有更高的载流子注入效率，提升了蓝光波段的量子效率，实现高灵敏度高带宽探测。
附图说明
图1为本发明提供的MoSe 2/InGaN多光谱光电探测器的结构剖面示意图；其中，1-衬底；2-缓冲层；3-InGaN层；4-MoSe 2层；5-Al 2O 3阻隔层；6-金属层电极；
图2为本发明提供的MoSe 2/InGaN多光谱光电探测器的电极结构的俯视面示意图；
图3为实施例1制备的MoSe 2/InGaN多光谱光电探测器的I-V曲线图。
具体实施方式
下面结合实施例，对本发明作进一步地详细说明，但本发明的实施方式不限于此。
本发明的MoSe 2/InGaN多光谱光电探测器剖面结构示意图如图1所示，包括从下到上依次排布的衬底1、缓冲层2、InGaN层3和MoSe 2层4，MoSe 2层在InGaN层上形成台阶状的水平台面；
所述光电探测器还包括阻隔层5和电极层6；所述阻隔层5设置在InGaN层上形成台阶状的水平台面上以及部分MoSe 2层上，所述电极层6设置在阻隔层5上并覆盖部分MoSe 2层4上裸露部分。
所述InGaN层和MoSe 2层形成MoSe 2/InGaN功能层。
所述阻隔层5为Al 2O 3阻隔层。
所述缓冲层2为从下到上依次排布的AlN层、AlGaN层和GaN层，AlN层设置在衬底1上；InGaN层3设置在GaN层上。
所述InGaN层的厚度为100～200nm，MoSe 2层的厚度为1～2nm。
衬底为Si衬底。
所述AlN层、AlGaN层和GaN层的厚度分别为350～450nm、650～700nm、4～5μm。
MoSe 2层4两端在InGaN层3上都形成台阶状的水平台面(即MoSe 2层4设置在InGaN层3上的中部)。
实施例1
本实施例提供了一种MoSe 2/InGaN多光谱光电探测器，包括从下到上依次排布的衬底、缓冲层、InGaN层和MoSe 2层，MoSe 2层在InGaN层上形成台阶状的水平台面；所述光电探测器还包括阻隔层和电极层；所述阻隔层设置在InGaN层上形成台阶状的水平台面上以及部分MoSe 2层上，所述电极层设置在阻隔层上并覆盖部分MoSe 2层上裸露部分。MoSe 2层两端在InGaN层上都形成台阶状的水平台面(即MoSe 2层设置在InGaN层的中部)。两台阶状的水平台面以及相邻的部分MoSe 2层上分别设有阻隔层。两阻隔层上及部分MoSe 2层上设有电极层。
衬底为Si衬底；所述InGaN层的厚度为150nm，MoSe 2层的厚度为1.5nm。AlN层、AlGaN层和GaN层的厚度分别为350nm、675nm、4.5μm。
如图2所示，电极的形状为叉指电极，所述电极层为金属电极层，具体为Ti/Au金属层，Ti/Au金属层为从下到上排布的Ti金属层和Au金属层。Ti层靠近阻隔层；Ti金属层的厚度为25nm、Au金属层的厚度为105nm。
所述MoSe 2/InGaN多光谱光电探测器的制备方法，包括以下步骤：
(1)采用MOCVD方法在衬底上生长缓冲层，再采用MOCVD方法在缓冲层上依次生长InGaN层、MoSe 2层；
(2)将MoSe 2层进行刻蚀，使得MoSe 2层在InGaN层上形成台阶状的水平台面；在在InGaN层上形成台阶状的水平台面上以及MoSe 2层上进行光刻(即表面匀胶、烘干、曝光、显影和氧离子处理)，获得蒸镀阻隔层的区域，通过蒸镀工艺制备Al 2O 3阻隔层；
(3)在Al 2O 3阻隔层上进行光刻(即在Al 2O 3阻隔层上表面匀胶、烘干、曝光、显影和氧离子处理)，获得蒸镀金属电极的区域；通过蒸镀工艺将金属电极蒸镀在Al 2O 3阻隔层上。
所述缓冲层是指采用MOCVD方法在衬底上从下到上依次外延生长AlN层、AlGaN层和GaN层，的温度分别为1150℃、1150℃和1100℃。N 2气流量为35sccm。
采用MOCVD方法在缓冲层上生长MoSe 2/InGaN层的温度为700℃。
步骤(2)和(3)中各自烘干时间为45s，曝光时间为8s，显影时间为45s，氧离子处理时间为2.5min。
Al 2O 3阻隔层与金属层电极的蒸镀速率各自为0.25nm/min。
图3为本实施例所得MoSe 2/InGaN多光谱光电探测器的I-V曲线，由图可见，制作电极为肖特基接触，在5V偏压下，650nm红光照射下，光电流达到21μA；450nm蓝光照射下，光电流为50μA。该探测器在蓝光波段与红光波段拥有高速的响应。
实施例2
本实施例提供了一种MoSe 2/InGaN多光谱光电探测器，包括从下到上依次排布衬底、缓冲层、InGaN层和MoSe 2层，MoSe 2层在InGaN层上形成台阶状的水平台面；所述光电探测器还包括阻隔层和电极层；所述阻隔层设置在InGaN层上形成台阶状的水平台面上以及部分MoSe 2层上，所述电极层设置在阻隔层上并覆盖部分MoSe 2层上裸露部分。
衬底为Si衬底；所述InGaN层的厚度为100nm，MoSe 2层的厚度为1.0nm。AlN层、AlGaN层和GaN层的厚度分别为350nm、650nm、4.0μm。
如图2所示，电极的形状为叉指电极，所述电极层为金属电极层，具体为Ti/Au金属层，Ti/Au金属层为从下到上排布的Ti金属层和Au金属层。Ti层靠近阻隔层；Ti金属层的厚度为20nm、Au金属层的厚度为100nm。
所述MoSe 2/InGaN多光谱光电探测器的制备方法，包括以下步骤：
(1)采用MOCVD方法在衬底上生长缓冲层，再采用MOCVD方法在缓冲层上依次生长InGaN层、MoSe 2层；
(2)将MoSe 2层进行刻蚀，使得MoSe 2层在InGaN层上形成台阶状的水平台面；在在InGaN层上形成台阶状的水平台面上以及MoSe 2层上进行光刻(即表面匀胶、烘干、曝光、显影和氧离子处理)，获得蒸镀阻隔层的区域，通过蒸镀工艺制备Al 2O 3阻隔层；
(3)在Al 2O 3阻隔层上进行光刻(即在Al 2O 3阻隔层上表面匀胶、烘干、曝光、显影和氧离子处理)，获得蒸镀金属电极的区域；通过蒸镀工艺将金属电极蒸镀在Al 2O 3阻隔层上。
所述缓冲层是指采用MOCVD方法在衬底上从下到上依次外延生长AlN层、AlGaN层和GaN层，生长AlN层、AlGaN层和GaN层的温度分别为1100℃、1100℃和1050℃。N 2气流量为30sccm。
采用MOCVD方法在缓冲层上生长InGaN层、MoSe 2层的温度为650℃。
步骤(2)和(3)中各自烘干时间为40s，曝光时间为5s，显影时间为40s，氧离子处理时间为2.0min。
Al 2O 3阻隔层与金属层电极的蒸镀速率各自为0.23nm/min。
将本实施例制备的MoSe 2/InGaN多光谱光电探测器进行测试。
本实施例制备的MoSe 2/InGaN多光谱光电探测器的相关性能和实施例1相似，相关性能参数可参照实施例1的相应附图。
实施例3
本实施例提供了一种MoSe 2/InGaN多光谱光电探测器，包括从下到上依次排布衬底、缓冲层、InGaN层和MoSe 2层，MoSe 2层在InGaN层上形成台阶状的水平台面；所述光电探测器还包括阻隔层和电极层；所述阻隔层设置在InGaN层上形成台阶状的水平台面上以及部分MoSe 2层上，所述电极层设置在阻隔层上并覆盖部分MoSe 2层上裸露部分。
衬底为Si衬底；所述InGaN层的厚度为200nm，MoSe 2层的厚度为2.0nm。AlN层、AlGaN层和GaN层的厚度分别为450nm、750nm、5.0μm。
如图2所示，电极的形状为叉指电极，所述电极层为金属电极层，具体为Ti/Au金属层，Ti/Au金属层为从下到上排布的Ti金属层和Au金属层。Ti层靠近阻隔层；Ti金属层的厚度为20nm、Au金属层的厚度为100nm。
所述MoSe 2/InGaN多光谱光电探测器的制备方法，包括以下步骤：
(1)采用MOCVD方法在衬底上生长缓冲层，再采用MOCVD方法在缓冲层上依次生长InGaN层、MoSe 2层；
(2)将MoSe 2层进行刻蚀，使得MoSe 2层在InGaN层上形成台阶状的水平台面；在在InGaN层上形成台阶状的水平台面上以及MoSe 2层上进行光刻 (即表面匀胶、烘干、曝光、显影和氧离子处理)，获得蒸镀阻隔层的区域，通过蒸镀工艺制备Al 2O 3阻隔层；
(3)在Al 2O 3阻隔层上进行光刻(即在Al 2O 3阻隔层上表面匀胶、烘干、曝光、显影和氧离子处理)，获得蒸镀金属电极的区域；通过蒸镀工艺将金属电极蒸镀在Al 2O 3阻隔层上。
所述缓冲层是指采用MOCVD方法在衬底上从下到上依次外延生长AlN层、AlGaN层和GaN层，生长AlN层、AlGaN层和GaN层的温度分别为1200℃、1200℃和1150℃。N2气流量为40sccm。
采用MOCVD方法在缓冲层上生长InGaN层、MoSe 2层的温度各自为750℃。
步骤(2)和(3)中各自烘干时间为50s，曝光时间为10s，显影时间为50s，氧离子处理时间为3.0min。
Al 2O 3阻隔层与金属层电极的蒸镀速率各自为0.28nm/min。
将本实施例制备的MoSe 2/InGaN多光谱光电探测器进行测试。
本实施例制备的MoSe 2/InGaN多光谱光电探测器的相关性能和实施例1相似，相关性能参数可参照实施例1的相应附图。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受所述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (10)

  1. 一种二硒化钼/InGaN多光谱光电探测器，其特征在于：包括从下到上依次排布的衬底、缓冲层、InGaN层和MoSe 2层，MoSe 2层部分覆盖InGaN层；
    所述光电探测器还包括阻隔层和电极层；所述阻隔层设置在未被MoSe 2层覆盖的InGaN层以及部分MoSe 2层上，所述电极层设置在阻隔层上并覆盖部分MoSe 2层上裸露部分。
  2. 根据权利要求1所述二硒化钼/InGaN多光谱光电探测器，其特征在于：
    所述缓冲层为从下到上依次排布的AlN层、AlGaN层和GaN层，AlN层设置在衬底上；InGaN层设置在GaN层上；
    所述InGaN层的厚度为100～200nm，MoSe 2层的厚度为1～2nm。
  3. 根据权利要求2所述二硒化钼/InGaN多光谱光电探测器，其特征在于：
    所述AlN层、AlGaN层和GaN层的厚度分别为350～450nm、650～700nm、4～5μm。
  4. 根据权利要求1所述二硒化钼/InGaN多光谱光电探测器，其特征在于：衬底为Si衬底；
    所述阻隔层为Al 2O 3阻隔层。
  5. 根据权利要求1所述二硒化钼/InGaN多光谱光电探测器，其特征在于：所述MoSe 2层部分覆盖InGaN层是指MoSe 2层在InGaN层上形成台阶状的水平台面；所述MoSe 2层两端在InGaN层上都形成台阶状的水平台面；
    所述电极层的形状为叉指电极；所述电极层为金属电极层，具体为Ti/Au金属层，Ti/Au金属层为从下到上排布的Ti金属层和Au金属层，Ti层靠近阻隔层。
  6. 根据权利要求5所述二硒化钼/InGaN多光谱光电探测器，其特征在于：Ti金属层的厚度为20～30nm，Au金属层的厚度为100～110nm。
  7. 根据权利要求1～6任一项所述二硒化钼/InGaN多光谱光电探测器的制备方法，其特征在于：包括以下步骤：
    (1)采用MOCVD方法在衬底上生长缓冲层，再采用MOCVD方法在缓冲层上依次生长InGaN层、MoSe 2层；
    (2)将MoSe 2层进行刻蚀，使得MoSe 2层在InGaN层上形成台阶状的水 平台面；在在InGaN层上形成台阶状的水平台面上以及MoSe 2层上进行光刻，获得蒸镀阻隔层的区域，通过蒸镀工艺制备阻隔层；
    (3)在阻隔层上以及未被阻隔层覆盖的MoSe 2层上进行光刻，获得蒸镀金属电极的区域，通过蒸镀工艺将金属电极蒸镀在阻隔层上。
  8. 根据权利要求7所述二硒化钼/InGaN多光谱光电探测器的制备方法，其特征在于：所述缓冲层是指采用MOCVD方法在衬底上从下到上依次外延生长AlN层、AlGaN层和GaN层，生长AlN层、AlGaN层和GaN层的温度分别为1100～1200℃、1100～1200℃和1000～1150℃；
    采用MOCVD方法在缓冲层上生长InGaN层、MoSe 2层的温度为600～750℃。
  9. 根据权利要求1所述二硒化钼/InGaN多光谱光电探测器的制备方法，其特征在于：阻隔层与金属层电极的蒸镀速率各自为0.23～0.28nm/min。
  10. 根据权利要求1～6任一项所述二硒化钼/InGaN多光谱光电探测器的应用，其特征在于：所述二硒化钼/InGaN多光谱光电探测器用于蓝光和/或红光多频谱光电探测。
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