WO2023042804A1 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
WO2023042804A1
WO2023042804A1 PCT/JP2022/034085 JP2022034085W WO2023042804A1 WO 2023042804 A1 WO2023042804 A1 WO 2023042804A1 JP 2022034085 W JP2022034085 W JP 2022034085W WO 2023042804 A1 WO2023042804 A1 WO 2023042804A1
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WO
WIPO (PCT)
Prior art keywords
substrate
plasma
chamber
plasma processing
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/034085
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English (en)
French (fr)
Japanese (ja)
Inventor
崇志 山村
竣翔 楊
康孝 濱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CN202280060608.6A priority Critical patent/CN117916863A/zh
Priority to KR1020247011722A priority patent/KR20240065117A/ko
Priority to JP2023548462A priority patent/JPWO2023042804A1/ja
Publication of WO2023042804A1 publication Critical patent/WO2023042804A1/ja
Priority to US18/605,369 priority patent/US20240222095A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/57—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Definitions

  • the plasma generator generates plasma in the chamber by means of an RF signal, and the controller further controls the power of the RF signal to be 50 W or more and 1,000 W or less.
  • a plasma processing apparatus for plasma processing a substrate.
  • a plasma processing apparatus includes a chamber, a substrate support provided in the chamber and configured to support a substrate, a plasma generator generating plasma in the chamber, and a substrate support and a substrate in the chamber. and a controller, wherein the controller causes the lifter to move the substrate from a position away from the substrate support toward the substrate support, and during the movement of the substrate, the plasma generator generates plasma in the chamber, and controls the lifter to place the substrate on the substrate support while the plasma is generated in the chamber.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/JP2022/034085 2021-09-14 2022-09-12 プラズマ処理装置及びプラズマ処理方法 Ceased WO2023042804A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN202280060608.6A CN117916863A (zh) 2021-09-14 2022-09-12 等离子体处理装置和等离子体处理方法
KR1020247011722A KR20240065117A (ko) 2021-09-14 2022-09-12 플라스마 처리 장치 및 플라스마 처리 방법
JP2023548462A JPWO2023042804A1 (https=) 2021-09-14 2022-09-12
US18/605,369 US20240222095A1 (en) 2021-09-14 2024-03-14 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021149137 2021-09-14
JP2021-149137 2021-09-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/605,369 Continuation US20240222095A1 (en) 2021-09-14 2024-03-14 Plasma processing apparatus and plasma processing method

Publications (1)

Publication Number Publication Date
WO2023042804A1 true WO2023042804A1 (ja) 2023-03-23

Family

ID=85602910

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/034085 Ceased WO2023042804A1 (ja) 2021-09-14 2022-09-12 プラズマ処理装置及びプラズマ処理方法

Country Status (5)

Country Link
US (1) US20240222095A1 (https=)
JP (1) JPWO2023042804A1 (https=)
KR (1) KR20240065117A (https=)
CN (1) CN117916863A (https=)
WO (1) WO2023042804A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070054504A1 (en) * 2005-09-07 2007-03-08 Applied Materials, Inc. Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
JP2007220926A (ja) * 2006-02-17 2007-08-30 Mitsubishi Heavy Ind Ltd プラズマ処理装置及びプラズマ処理方法
JP2009302285A (ja) * 2008-06-13 2009-12-24 Shibaura Mechatronics Corp プラズマ処理装置、プラズマ処理方法、および電子デバイスの製造方法
KR20150131895A (ko) * 2014-05-16 2015-11-25 박영소 웨이퍼 범프 리플로우 방법 및 장비

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6296735B1 (en) 1993-05-03 2001-10-02 Unaxis Balzers Aktiengesellschaft Plasma treatment apparatus and method for operation same
US20030000647A1 (en) * 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
US10658222B2 (en) * 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP7134104B2 (ja) * 2019-01-09 2022-09-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
JP7442349B2 (ja) * 2020-03-09 2024-03-04 東京エレクトロン株式会社 基板搬送システムおよびロードロックモジュール
JP7455012B2 (ja) * 2020-07-07 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
JP7482746B2 (ja) * 2020-10-19 2024-05-14 東京エレクトロン株式会社 基板処理装置、基板処理システム、及びメンテナンス方法
KR102580583B1 (ko) * 2021-08-10 2023-09-21 피에스케이 주식회사 기판 처리 장치
JP7715467B2 (ja) * 2022-05-26 2025-07-30 東京エレクトロン株式会社 基板処理装置及びリング部材の位置合わせ方法
KR20250084933A (ko) * 2022-09-30 2025-06-11 도쿄엘렉트론가부시키가이샤 기판 처리 시스템
WO2024075423A1 (ja) * 2022-10-07 2024-04-11 東京エレクトロン株式会社 基板処理システム及びエッジリングの取り付け方法
CN119301743A (zh) * 2022-10-31 2025-01-10 东京毅力科创株式会社 基板处理装置、基板处理系统以及清洁方法
JP7671929B1 (ja) * 2023-09-29 2025-05-02 東京エレクトロン株式会社 プラズマ処理装置及び基板処理システム
CN120077467A (zh) * 2023-09-29 2025-05-30 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
CN222320176U (zh) * 2023-12-21 2025-01-07 中微半导体设备(上海)股份有限公司 一种等离子体处理设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070054504A1 (en) * 2005-09-07 2007-03-08 Applied Materials, Inc. Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2
JP2007220926A (ja) * 2006-02-17 2007-08-30 Mitsubishi Heavy Ind Ltd プラズマ処理装置及びプラズマ処理方法
JP2009302285A (ja) * 2008-06-13 2009-12-24 Shibaura Mechatronics Corp プラズマ処理装置、プラズマ処理方法、および電子デバイスの製造方法
KR20150131895A (ko) * 2014-05-16 2015-11-25 박영소 웨이퍼 범프 리플로우 방법 및 장비

Also Published As

Publication number Publication date
CN117916863A (zh) 2024-04-19
US20240222095A1 (en) 2024-07-04
JPWO2023042804A1 (https=) 2023-03-23
KR20240065117A (ko) 2024-05-14
TW202331918A (zh) 2023-08-01

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