JPWO2023042804A1 - - Google Patents
Info
- Publication number
- JPWO2023042804A1 JPWO2023042804A1 JP2023548462A JP2023548462A JPWO2023042804A1 JP WO2023042804 A1 JPWO2023042804 A1 JP WO2023042804A1 JP 2023548462 A JP2023548462 A JP 2023548462A JP 2023548462 A JP2023548462 A JP 2023548462A JP WO2023042804 A1 JPWO2023042804 A1 JP WO2023042804A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021149137 | 2021-09-14 | ||
PCT/JP2022/034085 WO2023042804A1 (ja) | 2021-09-14 | 2022-09-12 | プラズマ処理装置及びプラズマ処理方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2023042804A1 true JPWO2023042804A1 (ja) | 2023-03-23 |
Family
ID=85602910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023548462A Pending JPWO2023042804A1 (ja) | 2021-09-14 | 2022-09-12 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2023042804A1 (ja) |
KR (1) | KR20240065117A (ja) |
CN (1) | CN117916863A (ja) |
TW (1) | TW202331918A (ja) |
WO (1) | WO2023042804A1 (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6296735B1 (en) | 1993-05-03 | 2001-10-02 | Unaxis Balzers Aktiengesellschaft | Plasma treatment apparatus and method for operation same |
US7465680B2 (en) * | 2005-09-07 | 2008-12-16 | Applied Materials, Inc. | Post deposition plasma treatment to increase tensile stress of HDP-CVD SIO2 |
JP4865352B2 (ja) * | 2006-02-17 | 2012-02-01 | 三菱重工業株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5565892B2 (ja) * | 2008-06-13 | 2014-08-06 | 芝浦メカトロニクス株式会社 | プラズマ処理装置、プラズマ処理方法、および電子デバイスの製造方法 |
KR20150131895A (ko) * | 2014-05-16 | 2015-11-25 | 박영소 | 웨이퍼 범프 리플로우 방법 및 장비 |
-
2022
- 2022-09-12 KR KR1020247011722A patent/KR20240065117A/ko unknown
- 2022-09-12 CN CN202280060608.6A patent/CN117916863A/zh active Pending
- 2022-09-12 JP JP2023548462A patent/JPWO2023042804A1/ja active Pending
- 2022-09-12 WO PCT/JP2022/034085 patent/WO2023042804A1/ja active Application Filing
- 2022-09-14 TW TW111134654A patent/TW202331918A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW202331918A (zh) | 2023-08-01 |
KR20240065117A (ko) | 2024-05-14 |
CN117916863A (zh) | 2024-04-19 |
WO2023042804A1 (ja) | 2023-03-23 |