WO2023041631A1 - Circuit d'attaque et procédé pour faire fonctionner un circuit d'attaque - Google Patents

Circuit d'attaque et procédé pour faire fonctionner un circuit d'attaque Download PDF

Info

Publication number
WO2023041631A1
WO2023041631A1 PCT/EP2022/075624 EP2022075624W WO2023041631A1 WO 2023041631 A1 WO2023041631 A1 WO 2023041631A1 EP 2022075624 W EP2022075624 W EP 2022075624W WO 2023041631 A1 WO2023041631 A1 WO 2023041631A1
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
laser diode
driver circuit
charging
laser
Prior art date
Application number
PCT/EP2022/075624
Other languages
German (de)
English (en)
Inventor
Andreas Fröhlich
Stefan Mergl
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2023041631A1 publication Critical patent/WO2023041631A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • G01S7/4815—Constructional features, e.g. arrangements of optical elements of transmitters alone using multiple transmitters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/484—Transmitters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies

Definitions

  • the control circuit comprises a trigger input for receiving a trigger signal, a selection input for receiving a selection signal, a first number N of control outputs which are connected to a control terminal of a respective charging transistor of the first number N of laser diode arrangements (i.e. z. B. is coupled to control terminals of a first number N of load transistors) and an additional control output which is coupled to a control terminal of the discharge transistor.
  • the drive circuit generates the control signals at the first number N of control outputs as a function of the selection signal.
  • the driver circuit comprises an integrated circuit in which the control circuit and the charging transistor of the first number N of laser diode arrangements are integrated.
  • the integrated circuit is a monolithic integrated circuit.
  • the first number N of charging transistors and the drive circuit are advantageously implemented on a semiconductor substrate.
  • the integrated circuit can be produced, for example, using an integration technique such as CMOS technology.
  • the second number M of laser diodes is not integrated in the integrated circuit.
  • the third number L of capacitors can be integrated in the integrated circuit or be implemented externally.
  • the discharge transistor can be implemented as a silicon FET and integrated in the integrated circuit or it can be implemented externally.
  • the described driver circuit avoids using only one driver at the low voltage level, so that all channels of the laser chip emit light at the same time. Furthermore, the driver circuit is free of a bootstrap circuit in order to adapt a control voltage to a gate voltage required by the FET at the higher voltage level.
  • the driver circuit 10 includes a first number N of laser diode arrangements 20 , 30 .
  • the first number N is equal to 2.
  • the first number N can also be 1, 3 or 4.
  • the first number N can be greater than 1, greater than 2 or greater than 4.
  • a laser diode arrangement 20 of the first number N of laser diode arrangements 20 , 30 can also be called the first laser diode arrangement.
  • the laser diode assembly 20 includes a charging transistor 21 and a second node 22 .
  • the charging transistor 21 couples the second node 22 to the second supply terminal 12 .
  • a connection one The controlled path of the charging transistor 21 is connected to the second node 22 .
  • Another connection of the controlled path of the charging transistor 21 is connected to the second supply connection 12 .
  • the laser diode arrangement 20 comprises a second number M of laser diodes 23 to 26 .
  • the second number M of laser diodes 23 to 26 is four.
  • the second number can also be 1 , 2 , 3 or 8 .
  • the second number M can be greater than 1, greater than 2 or greater than 4.
  • the second number M of laser diodes 23 to 26 couples the first node 13 to the second node 22 .
  • the second number M of laser diodes 23 to 26 are connected in parallel. This means that the anodes of the second number M of laser diodes 23 to 26 are connected to one another.
  • the cathodes of the second number M of laser diodes 23 to 26 are connected to one another.
  • the anodes of the second number M of laser diodes 23 to 26 are connected to the second node 22 .
  • the cathodes of the second number M of laser diodes 23 to 26 are connected to the first node 13 .
  • the further charging transistor 31 is a p-channel transistor.
  • a source connection of the further charging transistor 31 is connected to the second supply connection 12 or coupled to the second supply connection 12 .
  • a drain connection of the further charging transistor 31 is connected to the further second node 32 or coupled to the further second node 32 .
  • the source connection of the further charging transistor 31 is connected to the drain connection of the further charging transistor 31 via the controlled path of the further charging transistor 31 .
  • the further second number M′ of laser diodes 33 to 36 of the further laser diode arrangement 30 can be different from the second number M of laser diodes 23 to 26 of the laser diode arrangement 20 .

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un circuit d'attaque (10) comprenant un premier et un deuxième branchement d'alimentation (11, 12), un premier nœud (13), un transistor de décharge (16) monté entre le premier nœud (13) et le premier branchement d'alimentation (11) et un premier nombre N d'ensembles diodes laser (20, 30). Un ensemble diode laser du premier nombre N d'ensembles diodes laser (20, 30) comprend un transistor de charge (21,31), un deuxième nœud (22, 32), un deuxième nombre M de diodes laser (23 – 26, 33 - 36) et un troisième nombre L de condensateurs (27, 37). Le transistor de charge (21, 31) est disposé entre le deuxième branchement d'alimentation (12) et le deuxième nœud (22, 32). Le deuxième nombre M de diodes laser (23 – 26, 33 - 36) est disposé entre le deuxième nœud (22, 32) et le premier nœud (13). Le troisième nombre L de condensateurs (27, 37) est disposé entre le deuxième nœud (22,32) et le premier branchement d'alimentation (11). L'invention concerne en outre un procédé pour faire fonctionner un circuit d'attaque (10), en particulier un circuit d'attaque (10) de ce type.
PCT/EP2022/075624 2021-09-16 2022-09-15 Circuit d'attaque et procédé pour faire fonctionner un circuit d'attaque WO2023041631A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102021123982.6A DE102021123982A1 (de) 2021-09-16 2021-09-16 Treiberschaltung und verfahren zum betreiben einer treiberschaltung
DE102021123982.6 2021-09-16

Publications (1)

Publication Number Publication Date
WO2023041631A1 true WO2023041631A1 (fr) 2023-03-23

Family

ID=83689885

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2022/075624 WO2023041631A1 (fr) 2021-09-16 2022-09-15 Circuit d'attaque et procédé pour faire fonctionner un circuit d'attaque

Country Status (2)

Country Link
DE (1) DE102021123982A1 (fr)
WO (1) WO2023041631A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200178361A1 (en) * 2018-11-30 2020-06-04 Yuuki OKA Drive circuit, light emitting device, distance measurement apparatus, and mobile body
CN112731350A (zh) * 2021-01-27 2021-04-30 复旦大学 一种激光雷达的扫描驱动电路及控制方法
WO2021140160A1 (fr) * 2020-01-07 2021-07-15 Elmos Semiconductor Se Module lumineux et appareil lidar possédant au moins un module lumineux de ce type

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008062544B4 (de) 2007-12-20 2017-11-09 Denso Corporation Laser-Array-Schaltung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200178361A1 (en) * 2018-11-30 2020-06-04 Yuuki OKA Drive circuit, light emitting device, distance measurement apparatus, and mobile body
WO2021140160A1 (fr) * 2020-01-07 2021-07-15 Elmos Semiconductor Se Module lumineux et appareil lidar possédant au moins un module lumineux de ce type
CN112731350A (zh) * 2021-01-27 2021-04-30 复旦大学 一种激光雷达的扫描驱动电路及控制方法

Also Published As

Publication number Publication date
DE102021123982A1 (de) 2023-03-16

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