WO2018041867A1 - Circuit d'excitation pour des composants optoélectroniques - Google Patents

Circuit d'excitation pour des composants optoélectroniques Download PDF

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Publication number
WO2018041867A1
WO2018041867A1 PCT/EP2017/071713 EP2017071713W WO2018041867A1 WO 2018041867 A1 WO2018041867 A1 WO 2018041867A1 EP 2017071713 W EP2017071713 W EP 2017071713W WO 2018041867 A1 WO2018041867 A1 WO 2018041867A1
Authority
WO
WIPO (PCT)
Prior art keywords
control circuit
switch
terminal
capacitor
voltage
Prior art date
Application number
PCT/EP2017/071713
Other languages
German (de)
English (en)
Inventor
Andreas Wojcik
Hubert Halbritter
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2018041867A1 publication Critical patent/WO2018041867A1/fr

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0416Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/04163Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/40Details of LED load circuits
    • H05B45/44Details of LED load circuits with an active control inside an LED matrix
    • H05B45/46Details of LED load circuits with an active control inside an LED matrix having LEDs disposed in parallel lines

Definitions

  • the invention relates to a driver circuit for at least two light-emitting optoelectronic components according to claim 1 and a method for operating the driver circuit according to claim 11.
  • This patent application claims the priority of German Patent Application DE 10 2016 116 369.4, the disclosure of which is hereby incorporated by reference becomes.
  • the object of the invention is to provide a simpler driver circuit.
  • the object of the invention is achieved by the driver circuit according to claim 1 and by the method according to claim 11. Furthermore, the object of the invention is to provide a simplified method for controlling a driver circuit.
  • An advantage of the driver circuit described is that only one capacitor is needed to power multiple devices. This simplifies the structure. In addition, a more compact design of the driver circuit can be achieved since fewer capacitors, in particular discrete capacitors for forming the driver circuit are required. In addition, by eliminating the loading and unloading Charging times of the other capacitors a maximum pulse repetition rate of the driver circuit can be selected larger.
  • a capacitor for supplying the components is provided with electricity for at least two light emitting ⁇ optoelectronic devices.
  • the paths of the components of the first control circuit are merged between the respective component and the second terminal of the first control circuit.
  • a common second switch for the paths between the components and the second terminal of the first control circuit is provided.
  • the paths of the components of the first control circuit are merged between the component and the capacitor.
  • a common first switch for the paths between the components and the capacitor is provided. Even with this embodiment, the individual components can be operated with only a first switch of the first control circuit.
  • the second control circuit has a common third switch for all paths of the first control circuit, wherein the third switch is connected to each path of the first control circuit.
  • the third switch is connected between the capacitor and the first switch of the component at the path of the first control scarf ⁇ tion.
  • the third switch is also connected to the second terminal of the second control circuit.
  • the second control circuit for each path of the first control circuit has a third switch on.
  • the third switches are arranged in parallel between a path of the first control circuit and the second terminal of the second control circuit. In this way, each path can be connected separately and independently of the other paths to the fourth voltage connection.
  • the third switches between the at least first switch and the components are connected to the respective path.
  • the driver circuit is to provide fewer capacitors than components.
  • the at least first, the at least second and / or the at least third switch is designed as a field-effect transistor, in particular as a MOS-FET transistor.
  • the capacitor is designed as a ceramic capacitor. A discrete configuration of the ceramic capacitor enables fast and easy production of the driver circuit.
  • the components are designed as light-emitting diodes and / or as laser diodes. Light-emitting diodes and laser diodes can be operated by means of the at least one capacitor in a Pulsbe ⁇ drive with short switching times.
  • a compact construction of the components is an integration of the components tion into a single semiconductor device he ⁇ enough.
  • the laser diodes may be in the form of a laser bar.
  • the driver circuit with the components is integrated in a semiconductor device. As a result, a compact structure for the driver circuit and the components can be achieved overall.
  • FIG. 1 is a schematic electrical equivalent circuit diagram for the first embodiment of a driver circuit light-emitting components
  • Fig. 2 is an electrical equivalent circuit diagram for a second
  • Fig. 3 is an electrical equivalent circuit diagram for a third
  • Embodiment of a driver circuit for light emitting devices Embodiment of a driver circuit for light emitting devices
  • Fig. 4 is an electrical equivalent circuit diagram for a second
  • Fig. 1 shows a schematic representation of an electrical equivalent circuit diagram of a driver circuit 1 with four light-emitting optoelectronic devices 2, 3, 4, 5, the gate via a first control circuit 6 with a capacitor 7 and a third voltage terminal 8 are connected lei ⁇ tend can.
  • a second control circuit 9 is provided which can electrically connect the capacitor 7 to a fourth voltage terminal 10.
  • the first control circuit 6 comprises four first switches 11, 12, 13, 14.
  • the first control circuit 6 comprises a second switch
  • the second control circuit 9 comprises four third switches
  • the second terminal 31 serves to connect a fourth voltage terminal 10.
  • the first control circuit 6 has a first terminal 20, which is connected to a first voltage terminal 21. To the first terminal 20 of the first control circuit 6, a first terminal 22 of the capacitor 7 is connected. The second terminal 23 of the capacitor 7 is connected to a second voltage terminal 24 in connection.
  • the first STEU ⁇ ersciens 6 has an electrical path for each optoelectronic rindemittie ⁇ Rende component 2, 3, 4; 5. An electrical path connects in each case the first terminal 20 of the first control circuit to a second terminal 25 of the first control circuit 6. The second terminal 25 of the first control circuit 6 is connected to the third voltage terminal 8. In each path, in each case a first switch 11, 12, 13, 14, an optoelectronic component 2, 3, 4, 5 and a second switch 15 are arranged.
  • a common two ⁇ th switch 15 is provided for the four paths.
  • a separate second switch 15 can also be provided for each path, and the four paths could only be combined in the second connection 25 of the first control circuit 6.
  • the light-emitting optoelectronic components 2 to 5 are formed for example as a laser diode or light-emitting diodes being ⁇ .
  • the optoelectronic components 2 to 5 can be designed as separate components.
  • the optoelectronic components 2 to 5 can also be designed in the form of a single semiconductor component.
  • the optoelectronic components 2 to 5 may be designed in the form of a laser bar.
  • the capacitor 7 can be designed, for example, in the form of a ceramic capacitor as a discrete component.
  • each path of the first control circuit 6 is connected via a third switch 16, 17, 18, 19 of the second control circuit 9 to the fourth voltage terminal 10.
  • the third switches 16, 17, 18, 19 are each connected to a connecting line 26, 27, 28, 29, each of the first switch 11, 12, 13, 14 with the optoelectronic component 2, 3, 4, 5 of the ent - connecting path.
  • the first, second and third switches 11, 12, 13, 14, 15, 16, 17, 18, 19 are formed for example as Feld bintransisto ⁇ ren, in particular as MOS-FET transistors.
  • the first voltage terminal 21 is connected to, for example, a positive supply voltage.
  • the second voltage terminal 24, the third voltage terminal 8 and the fourth voltage terminal 10 are connected to a voltage which is smaller in comparison with the voltage of the first voltage terminal 21.
  • the second, third and fourth voltage terminals 24, 8, 10 may be connected to ground.
  • the driver circuit 1 can be operated as follows: The capacitor 7 is charged via the first voltage terminal 21 with the supply voltage. The first switch 11 and the third switch 16 are turned on to provide an electrically conductive connection between the capacitor 7 and the fourth voltage terminal 10 via the first switch 11 and the third switch 16 produce. As a result, the inductance of the first control circuit 6 is reduced. Subsequently, the second switch 15 is turned on and at the same time or before the third switch 16 is turned off. In this way, the first light-emitting optoelectronic component 2 is supplied with power and an optical light pulse is emitted. Subsequently, the first switch 11 and the second switch 15 are turned off.
  • the further first switch 12 of the second component 3 and the further third switch 17, which is connected to the second connection line 27, are turned on.
  • the second switch 15 is turned on and at the same time or before the other third switch 17 is turned off.
  • the second light-emitting ⁇ optoelectronic component 3 is ver ⁇ provides power.
  • the second light-emitting optoelectronic component 3 emits a light pulse.
  • the further first switch 12 and the second switch 15 are turned off.
  • the third optoelectronic component 4 and the fourth opto ⁇ electronic component 5 are supplied with power in an analogous manner successively.
  • the driver circuit shown in Fig. 1 requires an area of the order of 9 mm 2 for the transistors, the transistors being designed as power MOS FETs. For the control logic alone about 2 mm 2 are needed.
  • Fig. 2 shows another embodiment of a driver scarf ⁇ tung, wherein the first control circuit 6 is formed in FIG. 1. Likewise, the paths to the capacitor 7 and the first, second, third and fourth light-emitting Optoelectronic component 2 to 5 connected according to the arrangement of FIG.
  • the second control circuit 9 in the illustrated embodiment only a third switch 16.
  • a first terminal 30 of the third switch 16 is connected to the first terminal 20 of the first control circuit 6.
  • a second terminal of the third switch 16 forms the second terminal 31 of the second control circuit and is connected to the fourth voltage terminal 10.
  • the driver circuit of Figure 2 can be operated as follows: To operate the driver circuit, the capacitor 7 is charged via the first voltage terminal 21 with a supply voltage. Subsequently, the third switch 16 is first turned on and thus a part of the first control circuit 6 is energized. As a result, inductances of the first control circuit are reduced. Subsequently, the first switch 11 and the second switch 15 are turned on, at the same time or beforehand the third switch 16 is turned off in order to supply the first component 2 with current. After the emission of the light pulse by the first component 2, the first switch 11 and the second switch 15 are turned off.
  • the capacitor 7 makes it possible to provide a high current in a short time and thus to be able to deliver a short light pulse with the aid of the optoelectronic components 2 to 5.
  • FIG. 2 requires, for example, only an area of 6 mm 2 due to the smaller number of switches.
  • the control logic also requires 2 mm 2 . Thus be a total of 8 mm 2 needed to form the power MOS FETs and the control logic.
  • FIG. 3 shows a further embodiment of a driver circuit 1, wherein a common first switch 11 is provided between first terminals of the optoelectronic light-emitting components 2, 3, 4, 5 and the first terminal 20 of the first control circuit 6. Second terminals of the optoelectronic light-emitting components 2, 3, 4, 5 are each connected to the third voltage terminal 8 via a second switch 15. In addition, a third switch 16, which connects the first terminal 20 to the fourth voltage terminal 10, is connected to the first terminal 20 of the first control circuit 6.
  • FIG. 4 shows a further embodiment of a driver circuit 1, wherein a common first switch 11 is provided between first terminals of the optoelectronic light-emitting components 2, 3, 4, 5 and the first terminal 20 of the first control circuit 6.
  • the first switch 11 is thus connected to all four light-emitting optoelectronic components 2, 3, 4, 5.
  • Second terminals of the optoelectronic ⁇ light emitting devices 2,3,4,5 are each connected via a second switch 15 with the third voltage terminal 8.
  • a third switch 16 which connects the first connection line 26 to the fourth voltage connection 10, is connected to the connection line 26 between the first switch 11 and the light-emitting optoelectronic components 2, 3, 4, 5.
  • a light-emitting optoelectronic component can be designed to generate electromagnetic radiation with different wavelengths, for example UV light, visible light and / or infrared light.
  • the optoelectronic components can be designed for example as laser diodes and with a voltage between 7 and 16 volts with a power of 14 watts to 25 watts. be driven.
  • the light pulses emitted by the components can be in the range of 30 nanoseconds and emitted at a frequency of 1 kilohertz.
  • the capacitance of the capacitor 7 can be, for example, in the range between 100 nanofarads and 250 nanofarads.
  • a control logic is required, which is not explicitly shown in the figures.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

La présente invention concerne un circuit d'excitation (1) pour au moins deux composants optoélectroniques luminescents (2, 3, 4, 5) ayant un premier branchement de tension (21) qui est relié à un premier branchement électrique (22) d'un condensateur (7), un second branchement électrique (23) du condensateur (7) étant relié à un deuxième branchement de tension (24). Le premier branchement (22) du condensateur (7) est relié à un premier branchement (20) d'un premier circuit de commande (6) qui comprend un second branchement (25) pour un troisième branchement de tension (8). Le premier circuit de commande (6) comprend pour chaque composant (2, 3, 4, 5) entre ses premier et second branchements (20, 25) un chemin électrique dans lequel sont montés avant le composant (2, 3, 4, 5) un premier interrupteur (11, 12, 13, 14) et après le composant (2, 3, 4, 5) un second interrupteur (15). Ledit circuit d'excitation (1) comprend en outre un second circuit de commande (9) dont un premier branchement est relié à chaque chemin. Le second circuit de commande (9) comprend un second branchement (31) pour un quatrième branchement de tension (10) et au moins un interrupteur (16, 17, 18, 19) pour relier les chemins électriques à son second branchement (31).
PCT/EP2017/071713 2016-09-01 2017-08-30 Circuit d'excitation pour des composants optoélectroniques WO2018041867A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016116369.4 2016-09-01
DE102016116369.4A DE102016116369A1 (de) 2016-09-01 2016-09-01 Treiberschaltung für optoelektronische Bauelemente

Publications (1)

Publication Number Publication Date
WO2018041867A1 true WO2018041867A1 (fr) 2018-03-08

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PCT/EP2017/071713 WO2018041867A1 (fr) 2016-09-01 2017-08-30 Circuit d'excitation pour des composants optoélectroniques

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WO (1) WO2018041867A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT202000016423A1 (it) * 2020-07-07 2022-01-07 St Microelectronics Srl Circuito generatore di impulsi, sistema e procedimento corrispondenti
US11894657B2 (en) 2020-07-07 2024-02-06 Stmicroelectronics S.R.L. Pulse generator circuit, related system and method

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WO2020068837A1 (fr) * 2018-09-26 2020-04-02 Efficient Power Conversion Corporation Générateur de courant pulsé à canaux multiples avec charge
US11687110B2 (en) 2018-09-26 2023-06-27 Efficient Power Conversion Corporation Multi-channel pulse current generator with charging
DE202020106110U1 (de) 2019-07-25 2020-12-03 Bernd Burchard Vorrichtung zur Herstellung von HD-NV-Diamanten
DE102020124564A1 (de) 2020-01-07 2021-07-08 Elmos Semiconductor Se Linse für ein mechanikloses LIDARSystem für eine Drohne
EP4239370A3 (fr) 2020-01-07 2024-01-03 Elmos Semiconductor SE Module d'éclairage et dispositif lidar comprenant au moins un tel module d'éclairage
DE102020114782A1 (de) 2020-01-07 2021-07-08 Elmos Semiconductor Se Mechanikloses LIDAR-System für eine Drohne
DE102021101584B3 (de) 2021-01-25 2022-03-10 Elmos Semiconductor Se Mechanikloses ISO26262 konformes LIDAR-System
DE102021128923A1 (de) 2021-01-25 2022-07-28 Elmos Semiconductor Se Mechanikloses ISO26262 konformes LIDAR-System

Citations (1)

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Publication number Priority date Publication date Assignee Title
US5736881A (en) * 1994-12-05 1998-04-07 Hughes Electronics Diode drive current source

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011029306A (ja) 2009-07-23 2011-02-10 Sanyo Electric Co Ltd 発光素子駆動回路

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736881A (en) * 1994-12-05 1998-04-07 Hughes Electronics Diode drive current source

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT202000016423A1 (it) * 2020-07-07 2022-01-07 St Microelectronics Srl Circuito generatore di impulsi, sistema e procedimento corrispondenti
EP3937317A1 (fr) * 2020-07-07 2022-01-12 STMicroelectronics S.r.l. Circuit générateur d'impulsions, système et procédé associés
US11894657B2 (en) 2020-07-07 2024-02-06 Stmicroelectronics S.R.L. Pulse generator circuit, related system and method

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