Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W40/00—Arrangements for thermal protection or thermal control
  • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
  • H10W40/611—Bolts or screws
  • H10W40/613—Bolts or screws for stacked arrangements of a plurality of semiconductor devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W20/00—Interconnections in chips, wafers or substrates
  • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/01—Manufacture or treatment
  • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
  • H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
  • H10W70/63—Vias, e.g. via plugs
  • H10W70/635—Through-vias
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
  • H10W70/65—Shapes or dispositions of interconnections
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/01—Manufacture or treatment
  • H10W72/019—Manufacture or treatment of bond pads
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/90—Bond pads, in general
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W80/00—Direct bonding of chips, wafers or substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
  • H10W90/794—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between a chip and a stacked insulating package substrate, interposer or RDL
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W40/00—Arrangements for thermal protection or thermal control
  • H10W40/60—Securing means for detachable heating or cooling arrangements, e.g. clamps
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
  • H10W70/68—Shapes or dispositions thereof
  • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
  • H10W70/69—Insulating materials thereof
  • H10W70/692—Ceramics or glasses
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
  • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
  • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
  • H10W70/69—Insulating materials thereof
  • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon

Definitions

• the field generally relates to stacked structures, and in particular, to stacked electronic components for packaging or mounting to a board, including interposers and packaging substrates.
• Packaging multiple dies into an electronic system may involve assembling multiple dies onto a substrate with solder balls, thermal conductive bonding (TCB), etc. As assemblies become finer, it becomes harder to connect numerous contacts to the substrate. Introducing a redistribution layer (RDL) between the substrate and the dies having fine lines and spacings can provide better connectivity. However, RDL may have a roughly 1-micron alignment spacing. At the 1-micron scale, the substrate, e.g., printed circuit board (PCB), tends to be wavy and not have a smooth surface, so it is hard to align a RDL to the substrate.
• PCB printed circuit board
• FIG. 1 schematically shows an example stacked structure according to some embodiments of the disclosed technology.
• FIGS. 2A-2E are schematic cross sections illustrating an example process of forming an stacked structure shown in FIG. 1.
• FIGS. 3A-3F are schematic cross sections illustrating another example process of forming an stacked structure shown in FIG. 1.
• FIGS. 4A-4D are schematic cross sections illustrating yet another example process of forming an stacked structure shown in FIG. 1.
• FIGS. 5A-5D are schematic cross sections showing example stacked structures with more than one interposer.
• FIGS. 6A-6B are schematic cross sections illustrating example uses of the disclosed stacked structures in packages systems.
• Packaging multiple dies into an electronic system may involve first assembling dies on an interposer and then soldering the dies and interposer assembly onto a packaging substrate, which in turn can be mounted to a system board.
• the interposer with a redistribution layer on top can provide fine lines and spacings.
• the soldering process may involve raising the temperature then lowering the temperature at the interface, which creates stresses at the interface.
• the present disclosure provides a way of assembling interposers with a packaging substrate without the use of solder.
• the present disclosure provides a stacked structure having more than one interposer per substrate, adhered to the packaging substrate without solder.
• the stacked structure may be used in multichip modules having more than one substrate.
• FIG. 1 shows a stacked structure 100 having a substrate, e.g., an interposer, adhered to a packaging substrate.
• the stacked structure 100 can include a laminate substrate 103 (e.g., PCB or ceramic) and an interposer 101 mounted on the laminate substrate 103 by an electrically nonconductive adhesive layer 102, die attach material (e.g. die attach film or paste) or underfill.
• the interposer substrate, or at least the bulk material thereof has a coefficient of thermal expansion (CTE) that is below 10 ppm/°C, and more particularly below 7 ppm/°C.
• CTE coefficient of thermal expansion
• the adhesive layer 102 may be a composite which includes an epoxy that is filled with low coefficient of thermal expansion (CTE) particles, such as glass beads, to lower the overall CTE of the composite after hardening.
• the laminate substrate 103 can comprise a plurality of nonconductive layers with embedded conductive traces 105.
• the stacked structure 100 can further include a redistribution layer (RDL) 109 on the interposer 101.
• the RDL 109 having conductors 107 (pads, vias, traces, etc.) embedded in an insulating material, may be configured to electrically connect to an electronic device.
• the insulating material of the RDL 109 can be a deposited organic material, such as polymers (e.g., polyamide, polyimide, BCB, etc.). In other embodiments, the insulating material of the RDL 109 can be a deposited inorganic material such as is suitable for subsequent direct bonding with similar insulating materials or with semiconductor materials (e.g., silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, etc.). In some embodiments, the redistribution layer 109 has a line spacing less than 5 microns.
• a plurality of conductive vias 106 can extend through the interposer 101 to connect with the conductors 107 of the RDL 109 as shown, and can further extend through the redistribution layer 109 (see FIGS. 4A-4D and attendant description).
• the RDL 109 is disposed over the plurality of conductive vias 106.
• an additional redistribution layer is further arranged between the interposer 101 and the laminate substrate 103.
• the interposer 101 can include a nonconductive material formed of glass, a semiconductor material (e.g., silicon, GaAs, InP, etc.) or ceramic. In some embodiments, the interposer 101 can comprise a single crystal semiconductor material. In some embodiments, the interposer 101 has a smaller footprint than that of the laminate substrate 103. In some embodiments, the interposer 101 is devoid of active circuitry (e.g., transistors). In other embodiments, the interposer 101 can comprise active circuitry. In some embodiments, the laminate substrate 103 has high density interconnections within the substrate, relative to the laminate substrate 103.
• the electrically nonconductive adhesive layer 102 can be formed of a strong adhesive between the silicon portion of an interposer 101 and a PCB.
• a coefficient of thermal expansion of the nonconductive material (e.g., Si) of the interposer 101 substantially matches that of the laminate substrate 103 (e.g., PCB).
• FIGS. 2A-E illustrate a process of forming a stacked structure shown in FIG. 1, where like features are referenced by like reference numbers incremented by 100, with suffixes to designate features at different process stages.
• the process can start with, as shown in FIG. 2A, providing a laminate substrate 203a and an interposer 201a.
• the interposer 201a can have a mounting surface configured to support an electronic device and a back surface opposite the mounting surface.
• the interposer 201a can further comprise a plurality of through vias formed in a nonconductive material.
• the interposer 201a can further comprise barrier materials 204a, and can also include metallization (traces, vias, pads) for local connections or routing other than simple through vias.
• the laminate substrate 203a may comprise metallic traces 205a and contact pads 2050a.
• the process can move to, as shown in FIG. 2B, bonding, adhering or otherwise integrating the back surface of the interposer 201b to the laminate substrate 203b, in the illustrated embodiment by way of a nonconductive adhesive layer 202b.
• the process can move to, as shown in FIG. 2C, removing a portion of the adhesive 202c from the plurality of through vias (e.g., by CO2 laser ablation) to expose a plurality of contact pads 2050c in the laminate substrate 203c.
• the process can move to, as shown in FIG. 2D, metallizing the plurality of through vias to form a plurality of conductive vias 206d.
• the plurality of conductive vias 206d may be formed such that they are in contact with the contact pads 2050d of the laminate substrate 203d.
• the process can move to, as shown in FIG. 2E, forming a redistribution layer (RDL) 209e on the interposer 20 le after bonding the back surface of the interposer 201e to the laminate substrate 203e.
• Forming the redistribution layer 209e may involve growing or depositing the redistribution layer 209e on the interposer 201e.
• forming RDL involves depositing and patterning insulating layer(s) and conductive layer(s), such that the redistribution layer 209e includes conductors 207e (e.g., vias, traces, pads) embedded in an insulating material and in electrical communication with the underlying conductive vias 206e through the interposer 201e.
• conductors 207e e.g., vias, traces, pads
• FIGS. 3A-F illustrates another process of forming a stacked structure shown in FIG. 1, where like features are referenced by like reference numbers incremented by 200, with suffixes to designate features at different process stages.
• the process can start with, as shown in FIG. 3A, providing a laminate substrate 303a and an interposer 301a.
• the interposer 301a can have a mounting surface configured to support an electronic device and a back surface opposite the mounting surface.
• the interposer 301a can further comprise a plurality of through vias formed in a nonconductive material.
• the interposer 301a can further comprise barrier materials 304a, and can also include metallization (traces, vias, pads) for local connections or routing other than simple through vias.
• the laminate substrate 303a may comprise metallic traces 305a and contact pads 3050a.
• the process can move to, as shown in FIG. 3B, bonding, adhering or otherwise integrating the back surface of the interposer 301b to the laminate substrate 303b, in the illustrated embodiment by way of a nonconductive adhesive layer 302b.
• the process can move to, as shown in FIG. 3C, removing a portion of the adhesive 302c from the plurality of through vias to expose a plurality of contact pads 3050c in the laminate substrate 303c.
• the process can move to, as shown in FIG. 3D, metallizing the plurality of through vias to form a plurality of conductive vias 306d.
• the plurality of conductive vias 306d may be formed such that they are in contact with the contact pads 3050d of the laminate substrate 303d.
• the process can move to forming a redistribution layer on the interposer after bonding the back surface of the interposer to the laminate substrate. Up to this point, the process of FIGS. 3A-3D can be similar to that described for FIGS. 2A-2D.
• forming the redistribution layer can be achieved by way of a transfer process, as shown in FIG. 3E and FIG. 3F.
• forming the redistribution layer may involve providing a preformed RDL 309e and bonding the preformed RDL 309e to the interposer 301e by an intervening adhesive (not shown).
• the redistribution layer 309e may include conductors 307e (e.g., traces, vias, pads) embedded in an insulating material.
• forming the redistribution layer may involve providing a preformed RDL and directly bonding the preformed RDL to the interposer without an intervening adhesive (e.g., by a hybrid direct bonding process).
• the performed RDL 309e can be formed on a carrier 312e (such as a semiconductor or glass carrier). As shown in FIG. 3F, the carrier 312e can be removed from the RDL 309f after transferring the RDL 309f to the interposer 301f.
• Example RDL transfer processes are described in U.S. Patent Application No. 17/171351, the content of which is hereby incorporated by reference herein in its entirety and for all purposes.
• FIGS. 4A-D illustrates yet another process of forming a stacked structure shown in FIG. 1, where like features are referenced by like reference numbers incremented by 300, with suffixes to designate features at different process stages.
• the process can start with, as shown in FIG. 4A, providing a laminate substrate 403a and an interposer 401a.
• the interposer 401a can have a mounting surface configured to support an electronic device and a back surface opposite the mounting surface.
• the laminate substrate 403a may comprise metallic traces 405a and contact pads 4050a.
• RDL redistribution layer
• forming RDL involves depositing and patterning insulating layer(s) and conductive layer(s), such that the redistribution layer 409a includes conductors 407a (e.g., vias, traces, pads) embedded in an insulating material.
• conductors 407a e.g., vias, traces, pads
• a plurality of through vias extend through both the interposer 401a and the RDL 409a, and can be lined with barrier materials 404a as shown.
• the process can move to, as shown in FIG. 4B, bonding, adhering or otherwise integrating the back surface of the interposer 401b to the laminate substrate 403b, in the illustrated embodiment by way of a nonconductive adhesive layer 402b.
• the process can move to, as shown in FIG.
• the process can move to, as shown in FIG. 4D, metallizing the plurality of through vias to form a plurality of conductive vias 406d which extend through both the interposer 401d and the RDL 409d, and connect to the conductors 407d of the RDL 409d to the contact pads 4050d of the laminate substrate 403d.
• At least one integrated device die can be attached onto the redistribution layer, by way of solder bonding, adhesive bonding, or direct bonding without an intervening adhesive.
• an underfill may further be provided between the integrated device die and the redistribution layer.
• the underfill may have the capability to flow in between the die and the redistribution layer to provide mechanical protection of the solder ball joinings.
• the underfill may be a composite which includes an epoxy that is filled with low coefficient of thermal expansion (CTE) particles, such as glass beads, to lower the overall CTE of the composite after hardening.
• CTE coefficient of thermal expansion
• more than one interposer is integrated with a laminate substrate.
• the more than one interposer 501a, 501b may be integrated with the substrate 503a, 503b by more than one respective adhesive layer 502a, 502b.
• the more than one interposer may be integrated with the substrate by a common continuous or patterned adhesive.
• At least one integrated device die 523b can be attached to the same RDL (e.g., 509a or 509b).
• integrated device die 523b may be integrated and electrically connected to the RDL 509b, in the illustrated embodiment by solder balls 521b.
• the laminate substrate 503a, 503b may comprise metallic traces 505a, 505b and contact pads 5050a, 5050b.
• the RDL 509a, 509b may include conductors 507a, 507b (e.g., traces, vias, pads).
• the interposer 501a, 501b may be bonded, adhered or otherwise integrated to the laminate substrate 503a, 503b, in the illustrated embodiment by adhesive 502a, 502b.
• a plurality of conductive vias 506a, 506b through the interposer 501a, 501b may be in contact with the contact pads 5050a, 5050b of the laminate substrate, and may extend through both the interposer 501a, 501b and the RDL 509a, 509b as shown in FIGS. 4A-5B, or may extend through the interposer and connect with overlying RDL as shown in FIGS. 1-3F.
• one or more RDLs and interposers mounted to the same substrate can comprise the same or generally similar structure.
• one or more RDLs and interposers mounted to the same substrate can comprise different structures.
• one or more RDLs and interposers mounted to the same substrate can comprise functionally similar structures.
• one or more RDLs and interposers mounted to the same substrate can comprise functionally different structures.
• FIGS. 5C-5D illustrate stacked structures similar to those of FIGS. 5 A and 5B, and like reference numbers are used to reference like features. The difference is that FIGS. 5C-5D illustrate integrated device dies 523b direct hybrid bonded to the RDL 509b of or on the interposer 509b, without intervening solder or other adhesive layers.
• the disclosed stacked structures may be used in packages systems to provide a signal pathway that transfers a signal from the laminate substrate 603, through an interposer 601 by some of the conductive vias, through the redistribution layer 609, to an integrated device die 623 (e.g., CPU, GPU, memory stacks, etc.), and in the opposite direction.
• the integrated device dies 623 may be soldered to redistribution layers 609 by solder balls 641, and may communicate with one another through the redistribution layer(s) 609.
• FIG. 6A also shows another integrated device die 624 that is directly connected to the laminate substrate 603 by way of additional solder balls 631.
• the laminate substrate 603 may be soldered to a system board 625 by solder balls 621.
• This integrated device die 624 is shown communicating with the other device dies 623 by way of the RDL 609, interposer 601 and laminate substrate 603.
• the disclosed stacked structures thus may also provide a signal pathway that transfers a signal from an integrated device die, through the redistribution layer, to another integrated device die, connected to the redistribution layer(s) or to the laminate substrate, and in the other direction.
• the interposer 601 is electrically and mechanically connected to the laminate substrate 603 without solder.
• FIG. 6B is similar to FIG. 6A, except that the integrated device dies 623 are shown direct hybrid bonded to the RDL 609 on the interposer 601.
• Integrated device packages can use a redistribution layer (RDL) to redistribute signals from one or more integrated device dies in the package to other devices (e.g., other devices outside the footprint of the integrated device die).
• the RDL can include traces that extend laterally, for connecting pads on top that are laterally offset with respect to pads on the bottom. Such lateral extension can connect features on the bottom and top of the RDL that have different pitches (fan-out or fan-in), simply laterally offset and/or can electrically connect multiple dies.
• the RDL may comprise conductors embedded in an insulating or nonconductive material.
• An electronic component e.g., an integrated device die
• a redistribution layer which can comprise conductive routing traces to route signals laterally outside the footprint of the electronic component.
• the RDL comprises metallic traces or conductors extending laterally in order to transfer signals inwardly (fan-in) or outwardly (fan-out) from integrated device dies mounted to the RDL.
• the interconnect structure may comprise one or a few layers. Beneficially, the RDL can include numerous or dense interconnects and signal lines that can convey a significant number of signals between the dies.
• fan-out redistribution can convey signals from finely-pitched bond pads of an integrated device die to other devices laterally spaced from the die.
• fan-out RDL can convey signals from dense contacts of a die to more spread out leads or contact pads configured to connect to a system board (e.g., a printed circuit board, or PCB).
• ⁇ fan-out RDL can convey signals from the die to other devices, such as other integrated device dies, etc.
• the dies may be mounted to a sacrificial carrier, and a molding compound can be provided over the dies and carrier.
• the sacrificial carrier can be removed, and the molded device dies can be flipped over.
• the RDL can be deposited over the molding compound and the device dies to form a reconstituted wafer.
• the reconstituted wafer can be singulated into a plurality of packages, with each package including one or multiple dies connected to an RDL.
• one or more of the plurality of integrated device dies can be flip-chip mounted to the RDL.
• the plurality of integrated device dies can comprise any suitable type of device die.
• one or more of the plurality of integrated device dies can comprise an electronic component such as a processor die, a memory die, a microelectromechanical systems (MEMS) die, an optical device, or any other suitable type of device die.
• the electronic component can comprise a passive device such as a capacitor, inductor, or other surface-mounted device.
• Circuitry (such as active components like transistors) can be patterned at or near active surface(s) of one or more of the plurality of integrated device dies in various embodiments.
• the active surfaces may be on a side of one or more of the plurality of integrated device dies which is opposite respective backsides of the one or more of the plurality of integrated device dies.
• the backsides may or may not include any active circuitry or passive devices.
• the integrated device dies mounted to a substrate may be the same type of integrated device die or a different type of device die.
• An integrated device die can comprise a bonding surface and a back surface opposite the bonding surface.
• the bonding surface can have a plurality of conductive bond pads including a conductive bond pad, and a non-conductive material proximate to the conductive bond pad.
• the conductive bond pads of the integrated device die can be directly bonded to the corresponding conductive pads of the RDL without an intervening adhesive
• the non-conductive material of the integrated device die can be directly bonded to a portion of the corresponding non-conductive material of the RDL without an intervening adhesive. Directly bonding without an adhesive is described further below, and in U.S. Patent Nos.
• the plurality of integrated device dies can alternatively be bonded to the RDL by way of a thermal conductive bonding (TCB).
• TBC thermal conductive bonding
• Various embodiments disclosed herein relate to directly bonded structures in which two elements can be directly bonded to one another without an intervening adhesive.
• Two or more elements may be stacked on or bonded to one another to form a bonded structure.
• Conductive contact pads of one element may be electrically connected to corresponding conductive contact pads of another element. Any suitable number of elements can be stacked in the bonded structure.
• the contact pads may comprise metallic pads formed in a nonconductive bonding region, and may be connected to underlying metallization, such as a redistribution layer (RDL).
• RDL redistribution layer
• the elements are directly bonded to one another without an adhesive.
• a non-conductive or dielectric material of a first element can be directly bonded to a corresponding non-conductive or dielectric field region of a second element without an adhesive.
• the non-conductive material can be referred to as a nonconductive bonding region or bonding layer of the first element.
• the non-conductive material of the first element can be directly bonded to the corresponding nonconductive material of the second element using dielectric-to-dielectric bonding techniques.
• dielectric-to-dielectric bonds may be formed without an adhesive using the direct bonding techniques disclosed at least in U.S. Patent Nos. 9,564,414; 9,391,143; and 10,434,749, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes.
• hybrid direct bonds can be formed without an intervening adhesive.
• dielectric bonding surfaces can be polished to a high degree of smoothness.
• the bonding surfaces can be cleaned and exposed to a plasma and/or etchants to activate the surfaces.
• the surfaces can be terminated with a species after activation or during activation (e.g., during the plasma and/or etch processes).
• the activation process can be performed to break chemical bonds at the bonding surface, and the termination process can provide additional chemical species at the bonding surface that improves the bonding energy during direct bonding.
• the activation and termination are provided in the same step, e.g., a plasma or wet etchant to activate and terminate the surfaces.
• the bonding surface can be terminated in a separate treatment to provide the additional species for direct bonding.
• the terminating species can comprise nitrogen.
• the bonding surfaces can be exposed to fluorine. For example, there may be one or multiple fluorine peaks near layer and/or bonding interfaces. Thus, in the directly bonded structures, the bonding interface between two dielectric materials can comprise a very smooth interface with higher nitrogen content and/or fluorine peaks at the bonding interface. Additional examples of activation and/or termination treatments may be found throughout U.S. Patent Nos. 9,564,414; 9,391,143; and 10,434,749, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes.
• conductive contact pads of the first element can also be directly bonded to corresponding conductive contact pads of the second element.
• a hybrid bonding technique can be used to provide conductor-to-conductor direct bonds along a bond interface that includes covalently direct bonded dielectric-to-dielectric surfaces, prepared as described above.
• the conductor-to-conductor (e.g., contact pad to contact pad) direct bonds and the dielectric-to-dielectric hybrid bonds can be formed using the direct bonding techniques disclosed at least in U.S. Patent Nos. 9,716,033 and 9,852,988, the entire contents of each of which are incorporated by reference herein in their entirety and for all purposes.
• dielectric bonding surfaces can be prepared and directly bonded to one another without an intervening adhesive as explained above.
• Conductive contact pads (which may be surrounded by nonconductive dielectric field regions) may also directly bond to one another without an intervening adhesive.
• the respective contact pads can be recessed below exterior (e.g., upper) surfaces of the dielectric field or nonconductive bonding regions, for example, recessed by less than 30 nm, less than 20 nm, less than 15 nm, or less than 10 nm, for example, recessed in a range of 2 nm to 20 nm, or in a range of 4 nm to 10 nm.
• the nonconductive bonding regions can be directly bonded to one another without an adhesive at room temperature in some embodiments and, subsequently, the bonded structure can be annealed. Upon annealing, the contact pads can expand and contact one another to form a metal-to-metal direct bond.
• the use of hybrid bonding techniques such as Direct Bond Interconnect, or DBI®, available commercially from Xperi of San Jose, CA, can enable high density of pads connected across the direct bond interface (e.g., small or fine pitches for regular arrays).
• the pitch of the bonding pads, or conductive traces embedded in the bonding surface of one of the bonded elements may be less 40 microns or less than 10 microns or even less than 2 microns.
• the ratio of the pitch of the bonding pads to one of the dimensions of the bonding pad is less than 5, or less than 3 and sometimes desirably less than 2.
• the width of the conductive traces embedded in the bonding surface of one of the bonded elements may range between 0.3 to 3 microns.
• the contact pads and/or traces can comprise copper, although other metals may be suitable.
• a first element can be directly bonded to a second element without an intervening adhesive.
• the first element can comprise a singulated element, such as a singulated integrated device die.
• the first element can comprise a carrier or substrate (e.g., a wafer) that includes a plurality (e.g., tens, hundreds, or more) of device regions that, when singulated, form a plurality of integrated device dies.
• the second element can comprise a singulated element, such as a singulated integrated device die.
• the second element can comprise a carrier or substrate (e.g., a wafer).
• the first and second elements can be directly bonded to one another without an adhesive, which is different from a deposition process.
• a width of the first element in the bonded structure can be similar to a width of the second element.
• a width of the first element in the bonded structure can be different from a width of the second element.
• the width or area of the larger element in the bonded structure may be at least 10% larger than the width or area of the smaller element.
• the first and second elements can accordingly comprise non-deposited elements.
• directly bonded structures unlike deposited layers, can include a defect region along the bond interface in which nanovoids are present.
• the nanovoids may be formed due to activation of the bonding surfaces (e.g., exposure to a plasma).
• the bond interface can include concentration of materials from the activation and/or last chemical treatment processes.
• a nitrogen peak can be formed at the bond interface.
• an oxygen peak can be formed at the bond interface.
• the bond interface can comprise silicon oxynitride, silicon oxycarbonitride, or silicon carbonitride.
• the direct bond can comprise a covalent bond, which is stronger than van Der Waals bonds.
• the bonding layers can also comprise polished surfaces that are planarized to a high degree of smoothness.
• the metal-to-metal bonds between the contact pads can be joined such that copper grains grow into each other across the bond interface.
• the copper can have grains oriented along the 111 crystal plane for improved copper diffusion across the bond interface.
• the bond interface can extend substantially entirely to at least a portion of the bonded contact pads, such that there is substantially no gap between the nonconductive bonding regions at or near the bonded contact pads.
• a barrier layer may be provided under the contact pads (e.g., which may include copper). In other embodiments, however, there may be no barrier layer under the contact pads, for example, as described in US 2019/0096741, which is incorporated by reference herein in its entirety and for all purposes.
• a stacked structure can include a laminate substrate.
• the stacked structure can also include an interposer mounted on the laminate substrate by an adhesive layer.
• a plurality of conductive vias are extending through the interposer and the nonconductive adhesive layer and connecting to the laminate substrate.
• the stacked structure can also include a redistribution layer (RDL) adjacent to the interposer.
• RDL redistribution layer
• the RDL is on the interposer.
• the RDL is between the interposer and the adhesive layer.
• the stacked structure further includes an additional RDL between the interposer and the adhesive layer.
• the RDL is configured to electrically connect to an electronic device.
• the plurality of conductive vias extend through the redistribution layer.
• the interposer comprises a nonconductive material formed of glass, semiconductor and/or ceramic.
• the redistribution layer comprises conductors embedded in an insulating material.
• the redistribution layer is grown or deposited on the interposer.
• the redistribution layer is integrated with the interposer by an intervening adhesive.
• the redistribution layer is directly bonded to the interposer without an intervening adhesive.
• the stacked structure further includes at least one integrated device die arranged on the redistribution layer.
• the at least one integrated device die is electrically connected to the redistribution layer.
• the at least one integrated device die is integrated with the redistribution layer by soldering.
• the at least one integrated device die is integrated with the redistribution layer by an intervening adhesive.
• the at least one integrated device die is directly bonded to the redistribution layer without an intervening adhesive.
• the laminate substrate comprises a printed circuit board and/or wherein the laminate substrate comprises ceramic.
• the adhesive layer comprises an electrically nonconductive adhesive and/or an underfill.
• the stacked structure can also include a signal pathway configured to transfer a signal from the laminate substrate, through the interposer by way of the plurality of conductive vias, through the redistribution layer, to one of the at least one integrated device die, and vice versa.
• the stacked structure can also include a signal pathway configured to transfer a signal from one of the at least one integrated device die, through the redistribution layer, to another one of the at least one integrated device die, and vice versa.
• the stacked structure can also include an additional redistribution layer arranged between the interposer and the laminate substrate.
• the interposer is devoid of active circuitry.
• the RDL is disposed over the plurality of conductive vias.
• the plurality of conductive vias extend through from the interposer to the RDL.
• a stacked structure can include a laminate substrate.
• the stacked structure can also include at least two interposers arranged on the laminate substrate. Each of the at least two interposers are integrated with the laminate substrate by one or more nonconductive adhesive layers.
• each of the at least two interposers comprises a respective plurality of conductive vias formed in a nonconductive material.
• the stacked structure can also include a respective redistribution layer arranged on each of the at least two interposers.
• the stacked structure can also include a respective redistribution layer arranged on each of the at least two interposers.
• the respective plurality of conductive vias extends through the respective redistribution layer.
• the nonconductive material is formed of glass, semiconductor and/or ceramic.
• the respective redistribution layer comprises conductors embedded in an insulating material.
• the respective redistribution layer is grown or deposited on the interposer.
• the respective redistribution layer is integrated with the interposer by an intervening adhesive.
• the respective redistribution layer is directly bonded to the interposer without an intervening adhesive.
• the stacked structure can also include at least one integrated device die arranged on the respective redistribution layer.
• the at least one integrated device die is integrated with the respective redistribution layer by soldering.
• the at least one integrated device die is integrated with the respective redistribution layer by an intervening adhesive.
• the at least one integrated device die is directly bonded to the respective redistribution layer without an intervening adhesive.
• the laminate substrate is a printed circuit board and/or wherein the laminate substrate comprises ceramic.
• the respective adhesive layer comprises an electrically nonconductive adhesive and/or an underfill.
• the stacked structure can also include a signal pathway configured to transfer a signal from the laminate substrate, through one of the at least two interposers by way of the respective plurality of conductive vias, through the respective redistribution layer, to one of the at least one integrated device die, and vice versa.
• the stacked structure can also include an additional redistribution layer arranged between one of the at least two interposers and the laminate substrate.
• a method of forming a stacked structure can include providing a laminate substrate.
• the method can also include providing an interposer.
• the interposer is having a mounting surface configured to support an electronic device and a back surface opposite the mounting surface.
• the method can include integrating the interposer with the laminate substrate without solder.
• a plurality of conductive vias extend through the interposer to connect to the laminate substrate.
• the interposer comprises a plurality of through vias formed in a nonconductive material.
• the method can also include forming a redistribution layer on the interposer after bonding the back surface of the interposer to the laminate substrate.
• the method can also include forming a redistribution layer on the interposer before bonding the back surface of the interposer to the laminate substrate. [0081] In one embodiment, the plurality of through vias extends through the redistribution layer.
• the nonconductive material is formed of glass, semiconductor and/or ceramic.
• integrating the interposer with the laminate substrate includes providing a nonconductive adhesive, and the method includes removing a portion of the adhesive from the plurality of through vias to expose a plurality of contact pads in the laminate substrate.
• the method can also include metallizing the plurality of through vias to form a plurality of conductive vias.
• the redistribution layer comprises conductors embedded in an insulating material.
• forming the redistribution layer comprises growing or depositing the redistribution layer on the interposer.
• forming the redistribution layer comprises bonding the redistribution layer to the interposer by an intervening adhesive, where the redistribution layer has been preformed.
• forming the redistribution layer comprises directly bonding the redistribution layer to the interposer without an intervening adhesive, where the redistribution layer has been preformed.
• the method can also include attaching at least one integrated device die onto the redistribution layer.
• attaching the at least one integrated device die comprises solder bonding the at least one integrated device die to the redistribution layer.
• attaching the at least one integrated device die comprises adhesive bonding the at least one integrated device die to the redistribution layer.
• attaching the at least one integrated device die comprises direct bonding the at least one integrated device die to the redistribution layer without an intervening adhesive.
• the laminate substrate comprises a printed circuit board and/or wherein the laminate substrate comprises ceramic.
• integrating the interposer with the laminate substrate includes providing an underfill.
• the method can also include providing an additional redistribution layer between the interposer and the laminate substrate.
• integrating the interposer with the laminate substrate includes providing a nonconductive adhesive, and the method also includes removing a portion of the adhesive from the plurality of through vias and metallizing the plurality of through vias are subsequent to bonding the back surface of the interposer to the laminate substrate.
• the interposer has a smaller footprint than that of the laminate substrate.
• each of the at least two interposers has a smaller footprint than that of the laminate substrate.
• a coefficient of thermal expansion of the nonconductive material substantially matches that of the laminate substrate.
• the redistribution layer has a line spacing less than 5 microns.
• each of the at least two redistribution layers has a line spacing less than 5 microns.
• a stacked structure can include a laminate substrate.
• the stacked structure can also include a substrate mounted on the laminate substrate without solder.
• a plurality of conductive vias extend through the substrate and connect to the laminate substrate.
• the stacked structure can also include a redistribution layer (RDL) adjacent to the substrate.
• RDL redistribution layer
• the words “comprise,” “comprising,” “include,” “including” and the like are to be construed in an inclusive sense, as opposed to an exclusive or exhaustive sense; that is to say, in the sense of “including, but not limited to.”
• the word “coupled”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements.
• the word “connected”, as generally used herein, refers to two or more elements that may be either directly connected, or connected by way of one or more intermediate elements.
• the words “herein,” “above,” “below,” and words of similar import when used in this application, shall refer to this application as a whole and not to any particular portions of this application.
• first element when a first element is described as being “on” or “over” a second element, the first element may be directly on or over the second element, such that the first and second elements directly contact, or the first element may be indirectly on or over the second element such that one or more elements intervene between the first and second elements.
• words in the above Detailed Description using the singular or plural number may also include the plural or singular number respectively.
• the word “or” in reference to a list of two or more items that word covers all of the following interpretations of the word: any of the items in the list, all of the items in the list, and any combination of the items in the list.
• conditional language used herein such as, among others, “can,” “could,” “might,” “may,” “e.g.,” “for example,” “such as” and the like, unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements and/or states. Thus, such conditional language is not generally intended to imply that features, elements and/or states are in any way required for one or more embodiments.

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• 2022
  • 2022-08-29 JP JP2024513736A patent/JP2024532903A/ja active Pending
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