WO2023024688A1 - 一种无线充电系统的驱动电路构建方法及系统 - Google Patents

一种无线充电系统的驱动电路构建方法及系统 Download PDF

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WO2023024688A1
WO2023024688A1 PCT/CN2022/101704 CN2022101704W WO2023024688A1 WO 2023024688 A1 WO2023024688 A1 WO 2023024688A1 CN 2022101704 W CN2022101704 W CN 2022101704W WO 2023024688 A1 WO2023024688 A1 WO 2023024688A1
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sic mosfet
voltage
complementary
bridge arm
crosstalk
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PCT/CN2022/101704
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English (en)
French (fr)
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王丽芳
薄强
张玉旺
陶成轩
李芳�
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中国科学院电工研究所
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/3353—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having at least two simultaneously operating switches on the input side, e.g. "double forward" or "double (switched) flyback" converter
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H02J50/12—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/70—Circuit arrangements or systems for wireless supply or distribution of electric power involving the reduction of electric, magnetic or electromagnetic leakage fields
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/007—Regulation of charging or discharging current or voltage
    • H02J7/00712—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters
    • H02J7/007182—Regulation of charging or discharging current or voltage the cycle being controlled or terminated in response to electric parameters in response to battery voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/083—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the ignition at the zero crossing of the voltage or the current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to the field of wireless charging, in particular to a method and system for constructing a driving circuit of a wireless charging system.
  • Wireless charging technology realizes the electrical isolation of power supply and load, which can solve the problem of power safety caused by exposed conductors, and has been widely used in implanted medical equipment, electric vehicle wireless charging and other fields.
  • SiC devices have the advantages of low resistance, high speed, and high temperature resistance.
  • Wireless charging devices developed using SiC MOSFETs are expected to have high efficiency, high power density, and better overall performance.
  • the SiC MOSFET is turned on and off quickly, due to its high-speed switching characteristics, the drain-source voltage of the complementary transistor will be high dv/dt, and the high dv/dt will cause the driving voltage distortion of the complementary transistor SiC MOSFET. This phenomenon is called the bridge arm crosstalk.
  • the bridge arm crosstalk will reduce the reliability of the device and increase the switching loss.
  • the driving circuit of the SiC MOSFET in the wireless charging system is composed of Dual power supply, one power supply is used to eliminate positive crosstalk, and one power supply is used to eliminate negative crosstalk.
  • the circuit structure is relatively complicated, and it also affects the reliability of the driving power supply.
  • an embodiment of the present invention provides a method and system for constructing a driving circuit of a wireless charging system, so as to reduce the complexity of the circuit and improve the reliability of driving power supply.
  • the present invention provides the following scheme:
  • a driving circuit construction method for a wireless charging system comprising:
  • the bridge arm crosstalk analysis topology includes sequentially connected DC power supply, high frequency inverter, primary side compensation capacitor, loosely coupled transformer, secondary side compensation capacitor, rectifier and load;
  • the high frequency inverter includes four SiC MOSFETs structure, wherein two of the SiC MOSFET structures are connected in series to form the left half-bridge pair of bridge arms, and the other two SiC MOSFET structures are connected in series to form the right half-bridge pair of bridge arms; each of the SiC MOSFET structures includes a SiC MOSFET;
  • the two SiC MOSFETs in the bridge arm of the left half-bridge are complementary, and the two SiC MOSFETs in the bridge arm of the right half-bridge are complementary;
  • the crosstalk voltage of the other SiC MOSFET complementary to the SiC MOSFET is set to zero, and the driving circuit of the wireless charging system is constructed according to the negative crosstalk voltage of the bridge arm.
  • the negative bridge-arm crosstalk voltage of another SiC MOSFET complementary to the SiC MOSFET specifically includes:
  • circuit relational expression represents the voltage-capacitance relationship of another SiC MOSFET
  • the rate of change is the linear rate of change of the drain-source voltage of another SiC MOSFET dropping from the initial value to zero;
  • circuit relational expression is:
  • V ds1 is the drain-source voltage of another SiC MOSFET complementary to the turned-off SiC MOSFET;
  • V gd1 is the drain-gate voltage of another SiC MOSFET complementary to the turned-off SiC MOSFET;
  • V gs1 is the complementary voltage of the turned-off SiC MOSFET The gate-source voltage of another SiC MOSFET;
  • C gd1 is the drain-gate capacitance of another SiC MOSFET complementary to the off SiC MOSFET;
  • C gs1 is the gate-source capacitance of another SiC MOSFET complementary to the off SiC MOSFET;
  • R g1 is Internal parasitic resistance;
  • R gext1 is the external drive resistance, t represents time.
  • the expression is:
  • the formula for calculating the crosstalk voltage of the negative bridge arm is:
  • the SiC MOSFET in the drive circuit of the wireless charging system adopts zero-voltage turn-off.
  • the present invention also provides a driving circuit construction system for a wireless charging system, including:
  • Negative bridge arm crosstalk voltage calculation module used to calculate the negative bridge arm crosstalk voltage of another SiC MOSFET complementary to the SiC MOSFET when one SiC MOSFET in the bridge arm crosstalk analysis topology is turned off;
  • the bridge arm crosstalk analysis topology includes sequentially connected DC power supply, high frequency inverter, primary side compensation capacitor, loosely coupled transformer, secondary side compensation capacitor, rectifier and load;
  • the high frequency inverter includes four SiC MOSFETs structure, wherein two of the SiC MOSFET structures are connected in series to form the left half-bridge pair of bridge arms, and the other two SiC MOSFET structures are connected in series to form the right half-bridge pair of bridge arms; each of the SiC MOSFET structures includes a SiC MOSFET;
  • the two SiC MOSFETs in the bridge arm of the left half-bridge are complementary, and the two SiC MOSFETs in the bridge arm of the right half-bridge are complementary;
  • the driving circuit building block is used to set the positive bridge arm crosstalk voltage of another SiC MOSFET complementary to the SiC MOSFET to zero when one SiC MOSFET is turned off, and construct the drive of the wireless charging system according to the negative bridge arm crosstalk voltage circuit.
  • the negative bridge arm crosstalk voltage calculation module specifically includes:
  • the circuit relationship construction unit is used to construct a circuit relationship expression based on the turn-off delay and the Miller effect when a SiC MOSFET in the bridge arm crosstalk analysis topology is turned off; the circuit relationship expression represents the voltage-capacitance relationship of another SiC MOSFET;
  • the negative crosstalk expression determining unit is used to determine the expression of the negative bridge arm crosstalk voltage of another SiC MOSFET based on the circuit relation and the rate of change; the rate of change of the drain-source voltage of another SiC MOSFET is from the linear rate of change from the initial value down to zero;
  • the negative crosstalk voltage calculation unit is used to make the rate of change in the expression tend to infinity according to L'Hopital's limit rule, so as to obtain the negative crosstalk voltage of another SiC MOSFET.
  • the calculation formula of the negative bridge arm crosstalk voltage is:
  • the SiC MOSFET in the driving circuit of the wireless charging system is turned off by zero voltage.
  • the embodiment of the present invention proposes a driving circuit construction method and system for a wireless charging system, which calculates the negative bridge arm crosstalk voltage of another SiC MOSFET complementary to the SiC MOSFET when one SiC MOSFET in the bridge arm crosstalk analysis topology is turned off; When one SiC MOSFET is turned off, the positive crosstalk voltage of the other SiCMOSFET complementary to the SiCMOSFET is set to zero, and the driving circuit of the wireless charging system is constructed according to the negative crosstalk voltage of the bridge arm.
  • the invention can reduce the complexity of the circuit and improve the reliability of driving power supply.
  • the present invention can calculate the specific crosstalk voltage amplitude, and only use the specific negative bridge arm crosstalk voltage amplitude to construct the drive circuit of the wireless charging system, without considering the elimination of positive crosstalk in the drive circuit of the wireless charging system, therefore, can The dual power supply of the driving circuit in the wireless charging system is avoided, thereby reducing the complexity of the circuit and improving the reliability of the driving power supply.
  • Fig. 1 is a bridge arm crosstalk analysis topology diagram of a SiC MOSFET applied to a wireless charging system provided by an embodiment of the present invention
  • Fig. 2 is the circuit model diagram of the S1 bridge arm crosstalk of S2 opening and closing provided by the embodiment of the present invention
  • Fig. 3 is a flowchart of a method for constructing a driving circuit of a wireless charging system provided by an embodiment of the present invention
  • FIG. 4 is a calculation model diagram of S1 negative bridge arm crosstalk caused by S2 being turned off according to an embodiment of the present invention
  • FIG. 5 is a schematic circuit diagram of a drive circuit of a wireless charging system provided by an embodiment of the present invention.
  • Fig. 6 is a structural diagram of a driving circuit construction system of a wireless charging system provided by an embodiment of the present invention.
  • the SiC MOSFET of the wireless charging system has both positive bridge arm crosstalk and negative bridge arm crosstalk. Therefore, the designed driving circuit structure of the wireless charging system is relatively complicated.
  • the bridge arm crosstalk of the SiC MOSFET is firstly analyzed based on the bridge arm crosstalk analysis topology.
  • the bridge arm crosstalk analysis topology includes a DC power supply 101, a high frequency inverter 102, a primary side compensation capacitor 103, a loosely coupled transformer 104, a secondary side compensation capacitor 105, a rectifier 106 and a load 107;
  • the DC power supply 101 is connected to the input terminal of the high-frequency inverter 102, the output of the high-frequency inverter 102 is connected to the input of the primary side compensation network 103, and the output of the primary side compensation network 103 is connected to the input of the loosely coupled transformer 104,
  • the output of the loosely coupled transformer 104 is connected to the input of the secondary compensation network 105 , the output of the secondary compensation network 105 is connected to the input of the rectifier 106 , and the output of the rectifier 106 is connected to the load 107 .
  • the high-frequency inverter 102 includes four SiC MOSFET structures, respectively S 1 , S 2 , S 3 , and S 4 , wherein two of the SiC MOSFET structures (S 1 and S 2 ) are connected in series to form a left half-bridge pair bridge arm, the other two SiC MOSFET structures (S 3 and S 4 ) are connected in series to form a right half-bridge pair of bridge arms.
  • Each of the SiC MOSFET structures includes a SiC MOSFET.
  • each SiC MOSFET structure specifically includes: SiC MOSFET, drain-source capacitance, drain-gate capacitance, gate-source capacitance, internal parasitic resistance and external drive resistance, drain-source capacitance connected between the drain and source of SiC MOSFET , the drain-gate capacitance is connected between the drain and the gate of the SiC MOSFET, the gate-source capacitance is connected between the gate and the source of the SiC MOSFET, and the external drive resistor is connected to the gate of the SiC MOSFET through an internal parasitic resistance.
  • SiCMOSFET structure S 1 specifically includes: SiCMOSFET, drain-source capacitance C ds1 , drain-gate capacitance C gd1 , gate-source capacitance C gs1 , internal parasitic resistance R g1 and external drive resistance R gext1 , and the connection relationship between each device is as follows Figure 1 shows.
  • the two SiC MOSFETs in the bridge arm of the left half bridge are complementary (S 1 and S 2 are complementary), and the right half bridge is complementary to the two SiC MOSFETs in the bridge arm (S 3 and S 4 are complementary).
  • the high-frequency inverter 102 is composed of four SiC MOSFETs. Due to the symmetry, the left half-bridge of the high-frequency inverter 102 is used to analyze the crosstalk of the bridge arm, where R g1 and R g2 in Fig. 1 are the corresponding SiC MOSFETs R gext1 and R gext2 are the external drive resistors respectively.
  • the primary side compensation network 103 is composed of a compensation inductor L p , a series compensation capacitor C p1 and a parallel compensation capacitor C p2 .
  • the equivalent load of the high-frequency inverter 102 in the wireless charging system is generally slightly inductive, and the SiC MOSFET works in a soft-on and hard-off mode at this time. Without loss of generality, the following only analyzes the bridge arm crosstalk caused by the action of the lower tube S2 to the upper tube S1 , and the analysis of the bridge arm crosstalk caused by the action of S1 to S2 is similar.
  • the bridge arm crosstalk of S1 when S2 is turned on is shown in part (a) and part (b) of Figure 2, and part (a) of Figure 2 is the effect of the dead time before S2 is turned on on the bridge arm crosstalk of S1
  • the circuit model diagram, part (b) of Figure 2 is the circuit model diagram of the crosstalk of the S1 bridge arm during the turn-on transient of S2 . Let the current I out flow into node A as negative and flow out of node A as positive. Part (a) of Figure 2 is the state before S2 is turned on. At this time, both S1 and S2 are in the dead zone, and I out is positive.
  • the bridge arm crosstalk of S 1 when S 2 is turned off is shown in part (c) and part (d) of Figure 2, and part (c) of Figure 2 is the circuit model of crosstalk to S 1 bridge arm before S 2 is turned off Figure, part (d) of Figure 2 is a circuit model diagram of the crosstalk of the S 1 bridge arm during the turn-off transient of S 2 .
  • I out is a negative value, so V ds2 is approximately zero, and V ds1 is approximately U dc .
  • the SiC MOSFET used in the wireless charging system only has negative bridge arm crosstalk, and the SiC MOSFET at this time can be turned off by zero voltage without the occurrence of two complementary SiC MOSFETs in the bridge arm.
  • Short circuit problem This conclusion has positive significance for the design of the driving circuit and main circuit of SiC MOSFET applied in the wireless charging system, which can avoid the dual power supply of the driving and reduce the complexity of the design. Based on this conclusion, the driving circuit of the wireless charging system is constructed below.
  • the driving circuit construction method of the wireless charging system includes:
  • Step 111 Calculate the negative bridge arm crosstalk voltage of another SiC MOSFET complementary to the SiC MOSFET when one SiC MOSFET in the bridge arm crosstalk analysis topology is turned off.
  • This step specifically includes:
  • V ds1 is the drain-source voltage of another SiC MOSFET complementary to the turned-off SiC MOSFET;
  • V gd1 is the drain-gate voltage of another SiC MOSFET complementary to the turned-off SiC MOSFET;
  • V gs1 is the complementary voltage of the turned-off SiC MOSFET The gate-source voltage of another SiC MOSFET;
  • C gd1 is the drain-gate capacitance of another SiC MOSFET complementary to the off SiC MOSFET;
  • C gs1 is the gate-source capacitance of another SiC MOSFET complementary to the off SiC MOSFET;
  • R g1 is Internal parasitic resistance;
  • R gext1 is the external drive resistance, t represents time.
  • Step 112 When one SiC MOSFET is turned off, the positive crosstalk voltage of the other SiC MOSFET complementary to the SiC MOSFET is set to zero, and the driving circuit of the wireless charging system is constructed according to the negative crosstalk voltage.
  • the driving circuit of the wireless charging system is a non-dual power supply driving circuit.
  • the SiC MOSFETs in the first driving structure 201 and the second driving structure 202 are complementary, and the driving signals of the complementary SiC MOSFETs are generated, wherein the first The 1 and 2 ports of the optocoupler in the driving structure 201 receive control signals, and then the 3, 4, and 5 ports of the optocoupler output control signals to +15V, two push-pull transistors and 0V respectively, and then the two push-pull structures
  • the emitter of the triode is connected to the half-bridge driver and outputs the driving signal G1, S1 to the gate-source of the SiC MOSFET.
  • the structure of the second driving structure 202 is the same as that of the first driving structure 201 .
  • the driving circuit of the wireless charging system is only powered by a 15V single power supply. Compared with the driving circuit powered by dual power supplies, the complexity of the circuit is low, and the reliability of the driving power supply is high.
  • the SiC MOSFET in the driving circuit of the wireless charging system adopts zero-voltage turn-off to avoid the bridge arm through problem.
  • the SiC MOSFET switch tube is analyzed on the basis of the bridge arm crosstalk of the complementary tube; secondly, the SiC MOSFET switch tube is analyzed.
  • SiC MOSFETs used in wireless charging systems only have negative bridge arm crosstalk At this time, the SiC MOSFET can be turned off by zero voltage without the problem of bridge arm shoot-through.
  • This conclusion has positive significance for the design of the driving circuit and main circuit of the SiC MOSFET used in the wireless charging system. It is necessary to realize the design of the driving circuit of the wireless charging system through steps 111 and 112, avoiding the dual power supply of the driver. Moreover, the complexity of the design is reduced, and the reliability of the driving power supply is improved.
  • the present invention also provides a driving circuit construction system for a wireless charging system, see FIG. 6, the system includes:
  • the negative crosstalk voltage calculation module 301 is used to calculate the negative crosstalk voltage of another SiC MOSFET complementary to the SiC MOSFET when one SiC MOSFET in the bridge crosstalk analysis topology is turned off.
  • the bridge arm crosstalk analysis topology includes sequentially connected DC power supply, high frequency inverter, primary side compensation capacitor, loosely coupled transformer, secondary side compensation capacitor, rectifier and load;
  • the high frequency inverter includes four SiC MOSFETs structure, wherein two of the SiC MOSFET structures are connected in series to form the left half-bridge pair of bridge arms, and the other two SiC MOSFET structures are connected in series to form the right half-bridge pair of bridge arms; each of the SiC MOSFET structures includes a SiC MOSFET;
  • the two SiC MOSFETs in the arms of the left half-bridge are complementary, and the two SiC MOSFETs in the arms of the right half-bridge are complementary.
  • the driving circuit construction module 302 is used to set the positive bridge arm crosstalk voltage of another SiC MOSFET complementary to the SiC MOSFET to zero when one SiC MOSFET is turned off, and construct a wireless charging system according to the negative bridge arm crosstalk voltage drive circuit.
  • the negative bridge arm crosstalk voltage calculation module 301 specifically includes:
  • the circuit relationship construction unit is used to construct a circuit relationship based on the turn-off delay and the Miller effect when one SiC MOSFET in the bridge arm crosstalk analysis topology is turned off; the circuit relationship represents the voltage-capacitance relationship of another SiC MOSFET .
  • the negative crosstalk expression determining unit is used to determine the expression of the negative bridge arm crosstalk voltage of another SiC MOSFET based on the circuit relation and the rate of change; the rate of change of the drain-source voltage of another SiC MOSFET is from The linear rate of change from the initial value down to zero.
  • the negative crosstalk voltage calculation unit is used to make the rate of change in the expression tend to infinity according to L'Hopital's limit rule, so as to obtain the negative crosstalk voltage of another SiC MOSFET.
  • the calculation formula of the negative bridge arm crosstalk voltage is:
  • the SiC MOSFET in the driving circuit of the wireless charging system adopts zero-voltage turn-off, so that the short circuit problem of the two complementary SiC MOSFETs in the bridge arm can be avoided.
  • the drive circuit in order to avoid the short-circuit problem caused by the simultaneous conduction of the upper and lower MOSFETs caused by the bridge arm crosstalk, the drive circuit usually adopts the measures of positive voltage turn-on (such as +15V) and negative voltage turn-off (such as -5V) , the -5V turn-off voltage makes the MOSFET will not be misconducted even when the forward bridge arm crosstalk occurs.
  • the driving circuit of the wireless charging system is designed based on a zero-voltage shutdown method, and its structure is simpler than that of a traditional driving circuit.
  • each embodiment in this specification is described in a progressive manner, each embodiment focuses on the difference from other embodiments, and the same and similar parts of each embodiment can be referred to each other.
  • the description is relatively simple, and for the related information, please refer to the description of the method part.

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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
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Abstract

本发明公开了一种无线充电系统的驱动电路构建方法及系统，具体涉及无线充电领域。所述方法，包括：计算桥臂串扰分析拓扑中的一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的负向桥臂串扰电压；桥臂串扰分析拓扑包括依次连接的直流电源、高频逆变器、原边补偿电容、松耦合变压器、副边补偿电容、整流器和负载；高频逆变器包括四个SiC MOSFET结构；将一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的正向桥臂串扰电压置为零，根据负向桥臂串扰电压构建无线充电系统的驱动电路。本发明能降低电路的复杂度，提高驱动供电的可靠性。

Description

一种无线充电系统的驱动电路构建方法及系统
本申请要求于2021年08月23日提交中国专利局、申请号为202110968461.8、发明名称为“一种无线充电系统的驱动电路构建方法及系统”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及无线充电领域，特别是涉及一种无线充电系统的驱动电路构建方法及系统。
背景技术
无线充电技术实现了电源与负载的电气隔离，可解决裸露导体造成的用电安全问题，在植入式医疗设备、电动汽车无线充电等领域得到广泛的应用。SiC器件具有低阻、高速、耐高温的优势，利用SiC MOSFET研制的无线充电装置可望具有高效率、高功率密度和更加优异的整机性能。当SiC MOSFET快速开通与关断时，由于其高速开关特性会导致互补管漏源电压的高dv/dt，高dv/dt将引起互补管SiC MOSFET的驱动电压畸变，这种现象称为桥臂串扰。桥臂串扰会降低器件的可靠性、增加开关损耗，在Si基变换器已经得到了关注，由于SiC器件的开关速度更快，导致串扰问题比Si器件要更加明显。因此，为了在无线充电系统中更加高效、可靠的利用SiC器件，需要研究SiC MOSFET的桥臂串扰特性，桥臂串扰的类型判断和幅值计算成为研究的重点。
目前，已有文献对桥臂串扰进行研究，有论文指出在串联谐振逆变器中，上管开通不仅导致栅极出现正向串扰，而且上管关断时也会在下管出现负向串扰，并且该文未提及串扰电压幅值的计算，基于该研究结果，在设计无线充电系统的驱动电路时，会考虑正向串扰和负向串扰，因此，无线充电系统的SiC MOSFET的驱动电路由双电源供电，一个电源用于消除正向串扰，一个电源用于消除负向串扰。还有论文通过对基于SiC MOSFET的电机驱动器的桥臂串扰进行分析，指出此时的桥臂串扰与相电流的方向有关，当相电流为负时会存在桥臂串扰导致的误导通问题，当相电流为正时不会产生误导通问题，但由 于特殊的控制方式，无线充电系统不存在正向桥臂串扰而只存在负向桥臂串扰，特殊的控制方式也是为了消除正向串扰，无线充电系统的SiC MOSFET的驱动电路也由双电源供电。而无论无线充电系统的SiC MOSFET的驱动电路是由双电源供电，还是设计其他的结构同时消除正向串扰和负向串扰，电路结构都较为复杂，而且还影响驱动供电的可靠性。
发明内容
基于此，本发明实施例提供一种无线充电系统的驱动电路构建方法及系统，以降低电路的复杂度，提高驱动供电的可靠性。
为实现上述目的，本发明提供了如下方案：
一种无线充电系统的驱动电路构建方法，包括：
计算桥臂串扰分析拓扑中的一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的负向桥臂串扰电压；
所述桥臂串扰分析拓扑包括依次连接的直流电源、高频逆变器、原边补偿电容、松耦合变压器、副边补偿电容、整流器和负载；所述高频逆变器包括四个SiC MOSFET结构，其中两个所述SiC MOSFET结构串联构成左半桥对桥臂，另外两个所述SiC MOSFET结构串联构成右半桥对桥臂；各所述SiC MOSFET结构均包括一个SiC MOSFET；所述左半桥对桥臂中的两个SiC MOSFET互补，所述右半桥对桥臂中的两个SiC MOSFET互补；
将一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的正向桥臂串扰电压置为零，根据所述负向桥臂串扰电压构建无线充电系统的驱动电路。
可选的，所述计算桥臂串扰分析拓扑中的一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的负向桥臂串扰电压，具体包括：
当桥臂串扰分析拓扑中的一个SiC MOSFET关断时，基于关断延迟和密勒效应，构建电路关系式；所述电路关系式表示另一个SiC MOSFET的电压电容关系；
基于所述电路关系式和变化率，确定另一个SiC MOSFET的负向桥臂串 扰电压的表达式；所述变化率为另一个SiC MOSFET的漏源电压从初始值下降到零的线性变化率；
根据洛必达求极限法则，使所述表达式中的所述变化率趋于无穷大，得到另一个SiC MOSFET的负向桥臂串扰电压。
可选的，所述电路关系式为：
Figure PCTCN2022101704-appb-000001
其中，V ds1为与关断的SiCMOSFET互补的另一个SiCMOSFET的漏源电压；V gd1为与关断的SiC MOSFET互补的另一个SiC MOSFET的漏栅电压；V gs1为与关断的SiCMOSFET互补的另一个SiC MOSFET的栅源电压；C gd1为与关断的SiC MOSFET互补的另一个SiC MOSFET的漏栅电容；C gs1为与关断的SiCMOSFET互补的另一个SiCMOSFET的栅源电容；R g1为内部寄生电阻；R gext1为外部驱动电阻，t表示时间。
可选的，所述表达式为：
Figure PCTCN2022101704-appb-000002
其中，V gs1为与关断的SiCMOSFET互补的另一个SiCMOSFET的栅源电压；k f为变化率；C gd1为与关断的SiCMOSFET互补的另一个SiCMOSFET的漏栅电容；R g1为内部寄生电阻；R gext1为外部驱动电阻；C gs1为与关断的SiC MOSFET互补的另一个SiCMOSFET的栅源电容；U dc为直流电源电压。
可选的，所述负向桥臂串扰电压的计算公式为：
Figure PCTCN2022101704-appb-000003
其中，V gs1为与关断的SiCMOSFET互补的另一个SiC MOSFET的栅源电压；k f为变化率；C gd1为与关断的SiCMOSFET互补的另一个SiC MOSFET的漏栅电容；C gs1为与关断的SiCMOSFET互补的另一个SiC MOSFET的栅源电容；U dc为直流电源电压。
可选的，所述无线充电系统的驱动电路中的SiC MOSFET采用零压关断。
本发明还提供了一种无线充电系统的驱动电路构建系统，包括：
负向桥臂串扰电压计算模块，用于计算桥臂串扰分析拓扑中的一个SiC MOSFET关断时，与该SiCMOSFET互补的另一个SiC MOSFET的负向桥臂串扰电压；
所述桥臂串扰分析拓扑包括依次连接的直流电源、高频逆变器、原边补偿电容、松耦合变压器、副边补偿电容、整流器和负载；所述高频逆变器包括四个SiC MOSFET结构，其中两个所述SiC MOSFET结构串联构成左半桥对桥臂，另外两个所述SiC MOSFET结构串联构成右半桥对桥臂；各所述SiC MOSFET结构均包括一个SiC MOSFET；所述左半桥对桥臂中的两个SiC MOSFET互补，所述右半桥对桥臂中的两个SiCMOSFET互补；
驱动电路构建模块，用于将一个SiCMOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的正向桥臂串扰电压置为零，根据所述负向桥臂串扰电压构建无线充电系统的驱动电路。
可选的，所述负向桥臂串扰电压计算模块，具体包括：
电路关系构建单元，用于当桥臂串扰分析拓扑中的一个SiC MOSFET关断时，基于关断延迟和密勒效应，构建电路关系式；所述电路关系式表示另一个SiCMOSFET的电压电容关系；
负向串扰表达式确定单元，用于基于所述电路关系式和变化率，确定另一个SiC MOSFET的负向桥臂串扰电压的表达式；所述变化率为另一个SiC MOSFET的漏源电压从初始值下降到零的线性变化率；
负向串扰电压计算单元，用于根据洛必达求极限法则，使所述表达式中的所述变化率趋于无穷大，得到另一个SiC MOSFET的负向桥臂串扰电压。
可选的，所述负向串扰电压计算单元中，所述负向桥臂串扰电压的计算公式为：
Figure PCTCN2022101704-appb-000004
其中，V gs1为与关断的SiCMOSFET互补的另一个SiCMOSFET的栅源电压；k f为变化率；C gd1为与关断的SiCMOSFET互补的另一个SiCMOSFET的漏栅电容；C gs1为与关断的SiCMOSFET互补的另一个SiCMOSFET的栅源电容；U dc为直流电源电压。
可选的，所述驱动电路构建模块中，所述无线充电系统的驱动电路中的SiCMOSFET采用零压关断。
与现有技术相比，本发明的有益效果是：
本发明实施例提出了一种无线充电系统的驱动电路构建方法及系统，计算桥臂串扰分析拓扑中的一个SiCMOSFET关断时，与该SiCMOSFET互补的另一个SiCMOSFET的负向桥臂串扰电压；将一个SiCMOSFET关断时，与该SiCMOSFET互补的另一个SiCMOSFET的正向桥臂串扰电压置为零，根据负向桥臂串扰电压构建无线充电系统的驱动电路。本发明能降低电路的复杂度，提高驱动供电的可靠性。本发明能够计算具体的串扰电压幅值，并仅采用具体的负向桥臂串扰电压幅值构建无线充电系统的驱动电路，无需考虑消除无线充电系统的驱动电路中的正向串扰，因此，可以避免无线充电系统中驱动电路的双电源供电，从而降低电路的复杂度，提高驱动供电的可靠性。
说明书附图
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的应用于无线充电系统的SiC MOSFET的桥臂 串扰分析拓扑图；
图2为本发明实施例提供的S 2开通与关断对S 1桥臂串扰的电路模型图；
图3为本发明实施例提供的无线充电系统的驱动电路构建方法流程图；
图4为本发明实施例提供的S 2关断导致S 1负向桥臂串扰的计算模型图；
图5为本发明实施例提供的无线充电系统的驱动电路的电路原理图；
图6为本发明实施例提供的无线充电系统的驱动电路构建系统结构图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本发明作进一步详细的说明。
目前，在构建无线充电系统的驱动电路时，通常会认为无线充电系统的SiC MOSFET同时存在正向桥臂串扰和负向桥臂串扰，因此，设计的无线充电系统的驱动电路结构较为复杂。
本实施例首先基于桥臂串扰分析拓扑对SiC MOSFET的桥臂串扰进行分析。参见图1，所述桥臂串扰分析拓扑包括直流电源101、高频逆变器102、原边补偿电容103、松耦合变压器104、副边补偿电容105、整流器106和负载107；所述直流电源101与高频逆变器102的输入端相连接，高频逆变器102的输出与原边补偿网络103的输入相连接，原边补偿网络103的输出与松耦合变压器104的输入相连接，松耦合变压器104的输出与副边补偿网络105的输入相连接，副边补偿网络105的输出与整流器106的输入相连接，整流器106的输出与负载107相连接。所述高频逆变器102包括四个SiC MOSFET结构，分别为S 1、S 2、S 3、S 4，其中两个所述SiC MOSFET结构(S 1和S 2)串联构成左半桥对桥臂，另外两个所述SiC MOSFET结构(S 3和S 4)串联构成右半桥对桥臂。各所述SiC MOSFET结构均包括一个SiC MOSFET。本实施例中， 各所述SiCMOSFET结构均具体包括：SiCMOSFET、漏源电容、漏栅电容、栅源电容、内部寄生电阻和外部驱动电阻，SiC MOSFET的漏极和源极之间连接漏源电容，SiC MOSFET的漏极和栅极之间连接漏栅电容，SiC MOSFET的栅极和源极之间连接栅源电容，外部驱动电阻通过内部寄生电阻与SiC MOSFET的栅极连接。例如，SiCMOSFET结构S 1，具体包括：SiCMOSFET、漏源电容C ds1、漏栅电容C gd1、栅源电容C gs1、内部寄生电阻R g1和外部驱动电阻R gext1，各器件之间的连接关系如图1所示。所述左半桥对桥臂中的两个SiCMOSFET互补(S 1和S 2互补)，所述右半桥对桥臂中的两个SiC MOSFET互补(S 3和S 4互补)。
高频逆变器102由四只SiC MOSFET组成，由于对称性，取高频逆变器102的左半桥对桥臂串扰进行分析，其中图1中的R g1和R g2分别为相应SiC MOSFET的内部寄生电阻，R gext1和R gext2分别为外部驱动电阻。原边补偿网络103由补偿电感L p、串联补偿电容C p1和并联补偿电容C p2组成。无线充电系统高频逆变器102的等效负载一般呈微感性，此时的SiC MOSFET工作在软开通、硬关断的模式。不失一般性，下面只分析下管S 2的动作对上管S 1造成的桥臂串扰问题，而S 1动作对S 2造成的桥臂串扰分析与此类似。
S 2开通对S 1的桥臂串扰情况如图2的(a)部分和(b)部分所示，图2的(a)部分为S 2开通前的死区时间对S 1桥臂串扰的电路模型图，图2的(b)部分为S 2开通瞬态对S 1桥臂串扰的电路模型图，设电流I out流入节点A为负，流出节点A为正。图2的(a)部分为S 2开通前的状态，此时S 1和S 2均处于死区，I out为正。由于I out经S 2的体二极管续流，因此S 1的漏源电压V ds1近似为U dc，S 2的漏源电压V ds2近似为零。由图2的(b)部分可知，在S 2开通瞬态时，I out流经S 2沟道，因此V ds2仍为零，V ds1仍为U dc，导致dV ds1≈0。因此，S 2的开通不会导致S 1产生正向桥臂串扰。同理，S 1的开通也不会对S 2产生正向桥臂串扰。
S 2关断对S 1的桥臂串扰情况如图2的(c)部分和(d)部分所示，图2的(c)部分为S 2关断前对S 1桥臂串扰的电路模型图，图2的(d)部分为S 2关断瞬态对S 1桥臂串扰的电路模型图。由图2的(c)部分所示，在S 2关断前，I out是负值， 因此V ds2近似为零，V ds1近似为U dc。由图2的(d)部分可知，在S 2关断瞬态时，I out通过S 1的体二极管续流，因此V ds2近似为U dc，V ds1近似为零。此时，V ds1由于S 2的关断而瞬间下降，这就导致dV ds1/dt不为0。由于高dV ds1/dt，S 1的栅漏电容电容C gd1储存的电荷会通过栅极电路释放，导致S 1出现负桥臂串扰电压V gs1。
通过上述分析，可得到如下结论：应用于无线充电系统的SiC MOSFET仅存在负向桥臂串扰，此时的SiC MOSFET可以采用零电压关断而不会发生桥臂中的两个互补SiC MOSFET的短路问题。该结论对应用于无线充电系统的SiC MOSFET的驱动电路和主电路的设计具有积极意义，可避免驱动的双电源供电且降低设计的复杂性。下面基于这一结论，构建无线充电系统的驱动电路。
参见图3，本实施例提供的无线充电系统的驱动电路构建方法，包括：
步骤111：计算桥臂串扰分析拓扑中的一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的负向桥臂串扰电压。
该步骤，具体包括：
(1)当桥臂串扰分析拓扑中的一个SiC MOSFET关断(S 2关断)时，由于关断延迟和密勒效应，与关断的SiC MOSFET互补的另一个SiC MOSFET(S 1)的漏源电压V ds1不会立即放电而仍然保持S 2关断前的电压值。如图4所示，在S 2关断瞬态过后，S 1通过电容C gd1和C gs1放电，且C gs1有两条放电支路，一条经过C gd1，一条经过R g1和R gext1，由电路原理可得电路关系式：
Figure PCTCN2022101704-appb-000005
其中，V ds1为与关断的SiCMOSFET互补的另一个SiCMOSFET的漏源电压；V gd1为与关断的SiC MOSFET互补的另一个SiC MOSFET的漏栅电压；V gs1为与关断的SiCMOSFET互补的另一个SiC MOSFET的栅源电压；C gd1为与关断的SiC MOSFET互补的另一个SiC MOSFET的漏栅电容；C gs1为与关断 的SiCMOSFET互补的另一个SiCMOSFET的栅源电容；R g1为内部寄生电阻；R gext1为外部驱动电阻，t表示时间。
(2)基于所述电路关系式和变化率，确定另一个SiC MOSFET的负向桥臂串扰电压的表达式；所述变化率为另一个SiC MOSFET的漏源电压从初始值下降到零的线性变化率。实际应用中，假设C ds1的电压值从V ds1下降到0是线性变化的且变化率为k f(k f为负数)，可得S 1的负向桥臂串扰电压V gs1的表达式为：
Figure PCTCN2022101704-appb-000006
其中，V gs1为与关断的SiCMOSFET互补的另一个SiCMOSFET的栅源电压；k f为变化率；C gd1为与关断的SiC MOSFET互补的另一个SiC MOSFET的漏栅电容；R g1为内部寄生电阻；R gext1为外部驱动电阻；C gs1为与关断的SiC MOSFET互补的另一个SiCMOSFET的栅源电容；U dc为直流电源电压。
(3)SiCMOSFET的特点在于开关瞬态的变化率k f极大，根据洛必达求极限法则，使所述表达式中的所述变化率趋于无穷大，得到另一个SiC MOSFET的负向桥臂串扰电压：
Figure PCTCN2022101704-appb-000007
其中，V gs1为与关断的SiCMOSFET互补的另一个SiC MOSFET的栅源电压；k f为变化率；C gd1为与关断的SiCMOSFET互补的另一个SiC MOSFET的漏栅电容；C gs1为与关断的SiCMOSFET互补的另一个SiC MOSFET的栅源电容；U dc为直流电源电压。
步骤112：将一个SiCMOSFET关断时，与该SiC MOSFET互补的另一个SiCMOSFET的正向桥臂串扰电压置为零，根据所述负向桥臂串扰电压构建无线充电系统的驱动电路。
参见图5，该无线充电系统的驱动电路为非双电源供电的驱动电路，第一驱动结构201和第二驱动结构202中的SiC MOSFET互补，产生的是互补SiC MOSFET的驱动信号，其中第一驱动结构201中的光耦的1、2端口接受控制信号，然后光耦的3、4、5端口输出控制信号分别至+15V、两只推挽结构的三极管和0V，随后两只推挽结构三极管的发射极连接至半桥驱动器并输出驱动信号G1、S1给SiC MOSFET的栅源极。第二驱动结构202的结构与第一驱动结构201的结构相同。该无线充电系统的驱动电路仅由15V单电源供电，相比双电源供电的驱动电路，电路的复杂度低，驱动供电的可靠性高。
在一个示例中，所述无线充电系统的驱动电路中的SiC MOSFET采用零压关断，以避免发生桥臂直通问题。
上述实施例，首先，在无线充电系统等效电路(桥臂串扰分析拓扑)的基础上分析SiC MOSFET开关管的开通对互补管的桥臂串扰情况；其次，分析SiC MOSFET开关管的关断对互补管的桥臂串扰情况；最后，在以上分析的基础上推导出负向桥臂串扰电压幅值的计算公式，并得出结论：应用于无线充电系统的SiC MOSFET仅存在负向桥臂串扰，此时的SiC MOSFET可采用零压关断而不会发生桥臂直通问题。该结论对应用于无线充电系统的SiC MOSFET的驱动电路和主电路的设计具有积极意义，就要该结论通过步骤111和步骤112实现无线充电系统的驱动电路的设计，避免了驱动的双电源供电且降低了设计的复杂性，提高了驱动供电的可靠性。
本发明还提供了一种无线充电系统的驱动电路构建系统，参见图6，所述系统，包括：
负向桥臂串扰电压计算模块301，用于计算桥臂串扰分析拓扑中的一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的负向桥臂串扰电压。
所述桥臂串扰分析拓扑包括依次连接的直流电源、高频逆变器、原边补偿电容、松耦合变压器、副边补偿电容、整流器和负载；所述高频逆变器包括四个SiC MOSFET结构，其中两个所述SiC MOSFET结构串联构成左半桥对桥 臂，另外两个所述SiC MOSFET结构串联构成右半桥对桥臂；各所述SiC MOSFET结构均包括一个SiC MOSFET；所述左半桥对桥臂中的两个SiC MOSFET互补，所述右半桥对桥臂中的两个SiC MOSFET互补。
驱动电路构建模块302，用于将一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的正向桥臂串扰电压置为零，根据所述负向桥臂串扰电压构建无线充电系统的驱动电路。
在一个示例中，所述负向桥臂串扰电压计算模块301，具体包括：
电路关系构建单元，用于当桥臂串扰分析拓扑中的一个SiC MOSFET关断时，基于关断延迟和密勒效应，构建电路关系式；所述电路关系式表示另一个SiC MOSFET的电压电容关系。
负向串扰表达式确定单元，用于基于所述电路关系式和变化率，确定另一个SiC MOSFET的负向桥臂串扰电压的表达式；所述变化率为另一个SiC MOSFET的漏源电压从初始值下降到零的线性变化率。
负向串扰电压计算单元，用于根据洛必达求极限法则，使所述表达式中的所述变化率趋于无穷大，得到另一个SiC MOSFET的负向桥臂串扰电压。
在一个示例中，所述负向串扰电压计算单元中，所述负向桥臂串扰电压的计算公式为：
Figure PCTCN2022101704-appb-000008
其中，V gs1为与关断的SiCMOSFET互补的另一个SiC MOSFET的栅源电压；k f为变化率；C gd1为与关断的SiCMOSFET互补的另一个SiC MOSFET的漏栅电容；C gs1为与关断的SiCMOSFET互补的另一个SiC MOSFET的栅源电容；U dc为直流电源电压。
在一个示例中，所述驱动电路构建模块中，所述无线充电系统的驱动电路中的SiCMOSFET采用零压关断，从而可以避免桥臂中的两个互补SiC MOSFET的短路问题。对于传统驱动电路，为避免桥臂串扰带来的上、下 MOSFET同时导通而导致的短路问题，驱动电路通常采用正电压开通(如+15V)和负电压关断(如-5V)的措施，其中的-5V关断电压使得MOSFET即使发生正向桥臂串扰时也不会发生误导通问题，例如，一般的MOSFET在驱动电压为2V时就可能导通，而采用-5V的关断电压使得即使发生正向桥臂电压的幅值为6V时，关断电压才为1V(-5V+6V)，还没有达到MOSFET的导通电压值。本实施例中，基于无线充电系统的驱动不存在正向桥臂串扰而只存在负向桥臂串扰这一结论，因此，采用0V电压关断不会发生正向桥臂串扰而导致的误导通问题。本实施例中，所述无线充电系统的驱动电路基于零压关断的方式设计，相比传统的驱动电路，结构更加简单。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。对于实施例公开的系统而言，由于其与实施例公开的方法相对应，所以描述的比较简单，相关之处参见方法部分说明即可。
本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处。综上所述，本说明书内容不应理解为对本发明的限制。

Claims (10)

  1. 一种无线充电系统的驱动电路构建方法，其特征在于，包括：
    计算桥臂串扰分析拓扑中的一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的负向桥臂串扰电压；
    所述桥臂串扰分析拓扑包括依次连接的直流电源、高频逆变器、原边补偿电容、松耦合变压器、副边补偿电容、整流器和负载；所述高频逆变器包括四个SiC MOSFET结构，其中两个所述SiC MOSFET结构串联构成左半桥对桥臂，另外两个所述SiC MOSFET结构串联构成右半桥对桥臂；各所述SiC MOSFET结构均包括一个SiC MOSFET；所述左半桥对桥臂中的两个SiC MOSFET互补，所述右半桥对桥臂中的两个SiC MOSFET互补；
    将一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的正向桥臂串扰电压置为零，根据所述负向桥臂串扰电压构建无线充电系统的驱动电路。
  2. 根据权利要求1所述的一种无线充电系统的驱动电路构建方法，其特征在于，所述计算桥臂串扰分析拓扑中的一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的负向桥臂串扰电压，具体包括：
    当桥臂串扰分析拓扑中的一个SiC MOSFET关断时，基于关断延迟和密勒效应，构建电路关系式；所述电路关系式表示另一个SiC MOSFET的电压电容关系；
    基于所述电路关系式和变化率，确定另一个SiC MOSFET的负向桥臂串扰电压的表达式；所述变化率为另一个SiC MOSFET的漏源电压从初始值下降到零的线性变化率；
    根据洛必达求极限法则，使所述表达式中的所述变化率趋于无穷大，得到另一个SiC MOSFET的负向桥臂串扰电压。
  3. 根据权利要求2所述的一种无线充电系统的驱动电路构建方法，其特征在于，所述电路关系式为：
    Figure PCTCN2022101704-appb-100001
    其中，V ds1为与关断的SiC MOSFET互补的另一个SiC MOSFET的漏源电压；V gd1为与关断的SiC MOSFET互补的另一个SiC MOSFET的漏栅电压；V gs1为与关断的SiC MOSFET互补的另一个SiC MOSFET的栅源电压；C gd1为与关断的SiC MOSFET互补的另一个SiC MOSFET的漏栅电容；C gs1为与关断的SiC MOSFET互补的另一个SiC MOSFET的栅源电容；R g1为内部寄生电阻；R gext1为外部驱动电阻，t表示时间。
  4. 根据权利要求2所述的一种无线充电系统的驱动电路构建方法，其特征在于，所述表达式为：
    Figure PCTCN2022101704-appb-100002
    其中，V gs1为与关断的SiC MOSFET互补的另一个SiC MOSFET的栅源电压；k f为变化率；C gd1为与关断的SiC MOSFET互补的另一个SiC MOSFET的漏栅电容；R g1为内部寄生电阻；R gext1为外部驱动电阻；C gs1为与关断的SiC MOSFET互补的另一个SiC MOSFET的栅源电容；U dc为直流电源电压。
  5. 根据权利要求2所述的一种无线充电系统的驱动电路构建方法，其特征在于，所述负向桥臂串扰电压的计算公式为：
    Figure PCTCN2022101704-appb-100003
    其中，V gs1为与关断的SiC MOSFET互补的另一个SiC MOSFET的栅源电压；k f为变化率；C gd1为与关断的SiC MOSFET互补的另一个SiC MOSFET的漏栅电容；C gs1为与关断的SiC MOSFET互补的另一个SiC MOSFET的栅源电容；U dc为直流电源电压。
  6. 根据权利要求1所述的一种无线充电系统的驱动电路构建方法，其特征在于，所述无线充电系统的驱动电路中的SiC MOSFET采用零压关断。
  7. 一种无线充电系统的驱动电路构建系统，其特征在于，包括：
    负向桥臂串扰电压计算模块，用于计算桥臂串扰分析拓扑中的一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的负向桥臂串扰电压；
    所述桥臂串扰分析拓扑包括依次连接的直流电源、高频逆变器、原边补偿电容、松耦合变压器、副边补偿电容、整流器和负载；所述高频逆变器包括四个SiC MOSFET结构，其中两个所述SiC MOSFET结构串联构成左半桥对桥臂，另外两个所述SiC MOSFET结构串联构成右半桥对桥臂；各所述SiC MOSFET结构均包括一个SiC MOSFET；所述左半桥对桥臂中的两个SiC MOSFET互补，所述右半桥对桥臂中的两个SiC MOSFET互补；
    驱动电路构建模块，用于将一个SiC MOSFET关断时，与该SiC MOSFET互补的另一个SiC MOSFET的正向桥臂串扰电压置为零，根据所述负向桥臂串扰电压构建无线充电系统的驱动电路。
  8. 根据权利要求7所述的一种无线充电系统的驱动电路构建系统，其特征在于，所述负向桥臂串扰电压计算模块，具体包括：
    电路关系构建单元，用于当桥臂串扰分析拓扑中的一个SiC MOSFET关断时，基于关断延迟和密勒效应，构建电路关系式；所述电路关系式表示另一个SiC MOSFET的电压电容关系；
    负向串扰表达式确定单元，用于基于所述电路关系式和变化率，确定另一个SiC MOSFET的负向桥臂串扰电压的表达式；所述变化率为另一个SiC MOSFET的漏源电压从初始值下降到零的线性变化率；
    负向串扰电压计算单元，用于根据洛必达求极限法则，使所述表达式中的所述变化率趋于无穷大，得到另一个SiC MOSFET的负向桥臂串扰电压。
  9. 根据权利要求8所述的一种无线充电系统的驱动电路构建系统，其特征在于，所述负向串扰电压计算单元中，所述负向桥臂串扰电压的计算公式为：
    Figure PCTCN2022101704-appb-100004
    其中，V gs1为与关断的SiC MOSFET互补的另一个SiC MOSFET的栅源电压；k f为变化率；C gd1为与关断的SiC MOSFET互补的另一个SiC MOSFET的漏栅电容；C gs1为与关断的SiC MOSFET互补的另一个SiC MOSFET的栅源电容；U dc为直流电源电压。
  10. 根据权利要求7所述的一种无线充电系统的驱动电路构建系统，其特征在于，所述驱动电路构建模块中，所述无线充电系统的驱动电路中的SiC MOSFET采用零压关断。
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