WO2023013507A1 - 処理方法及びプラズマ処理装置 - Google Patents

処理方法及びプラズマ処理装置 Download PDF

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Publication number
WO2023013507A1
WO2023013507A1 PCT/JP2022/029017 JP2022029017W WO2023013507A1 WO 2023013507 A1 WO2023013507 A1 WO 2023013507A1 JP 2022029017 W JP2022029017 W JP 2022029017W WO 2023013507 A1 WO2023013507 A1 WO 2023013507A1
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WIPO (PCT)
Prior art keywords
heat transfer
mounting surface
wafer
substrate
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2022/029017
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English (en)
French (fr)
Japanese (ja)
Inventor
一也 永関
和基 茂山
慎司 檜森
昌伸 本田
怜 照内
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2023540294A priority Critical patent/JP7850728B2/ja
Priority to KR1020267008598A priority patent/KR20260046243A/ko
Priority to CN202280052184.9A priority patent/CN117813676A/zh
Priority to KR1020247005758A priority patent/KR102943336B1/ko
Publication of WO2023013507A1 publication Critical patent/WO2023013507A1/ja
Priority to US18/421,988 priority patent/US20240213000A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/206—Modifying objects while observing
    • H01J2237/2065—Temperature variations

Definitions

  • the present disclosure relates to a processing method and a plasma processing apparatus.
  • Patent Document 1 discloses a substrate provided with a mounting table having a mounting surface on which a substrate is mounted and provided with a gas supply pipe for supplying a heat transfer gas to a gap between the substrate and the mounting surface.
  • a processing device is disclosed.
  • the technology according to the present disclosure efficiently adjusts the temperature of an object to be temperature-controlled during plasma processing.
  • One aspect of the present disclosure is a processing method for performing plasma processing on a substrate, which includes the steps of placing a temperature adjustment target on a placement surface of a substrate support part in a processing container configured to be depressurized; A heat transfer medium composed of at least one of a liquid medium and a solid medium having fluidity is applied to the mounting surface of the substrate support portion and the rear surface of the object to be temperature-controlled via the substrate support portion. and forming a heat transfer layer; performing plasma processing on the substrate on the mounting surface on which the heat transfer layer is formed; and separating from the mounting surface.
  • FIG. 1 is a vertical cross-sectional view showing an outline of a configuration of a processing module as a plasma processing apparatus according to a first embodiment
  • FIG. 1 is a vertical cross-sectional view showing an outline of a configuration of a processing module as a plasma processing apparatus according to a first embodiment
  • FIG. 3 is a flowchart for explaining an example of wafer processing performed using the processing modules of FIGS. 1 and 2;
  • FIG. 3 illustrates the processing module of FIGS. 1 and 2 during wafer processing;
  • FIG. 3 illustrates the processing module of FIGS. 1 and 2 during wafer processing;
  • FIG. 3 illustrates the processing module of FIGS. 1 and 2 during wafer processing;
  • FIG. 3 illustrates the processing module of FIGS. 1 and 2 during wafer processing;
  • FIG. 3 illustrates the processing module of FIGS. 1 and 2 during wafer processing;
  • FIG. 3 illustrates the processing module of FIGS. 1 and 2 during wafer processing;
  • FIG. 3 illustrates the processing module of FIGS. 1 and
  • FIG. 5 is a diagram for explaining another example of the form of supply of the heat transfer medium; It is a figure which shows the example of a groove
  • FIG. 11 is a plan view showing an outline of the configuration of a plasma processing system including processing modules as a plasma processing apparatus according to a second embodiment; It is a longitudinal cross-sectional view showing an outline of a configuration of a processing module as a plasma processing apparatus according to a second embodiment. It is a longitudinal cross-sectional view showing an outline of a configuration of a processing module as a plasma processing apparatus according to a second embodiment.
  • FIG. 14 is a flowchart for explaining an example of wafer processing performed using the processing modules of FIGS. 12 and 13; FIG. FIG. 14 illustrates the processing module of FIGS. 12 and 13 during wafer processing; FIG. 14 illustrates the processing module of FIGS. 12 and 13 during wafer processing; FIG. 14 illustrates the processing module of FIGS. 12 and 13 during wafer
  • plasma processing such as etching and film formation is performed using plasma on substrates such as semiconductor wafers (hereinafter referred to as "wafers").
  • substrates such as semiconductor wafers (hereinafter referred to as "wafers").
  • Plasma processing is performed with a substrate placed on a substrate support table in a depressurized processing chamber.
  • annular member in plan view that is, an edge ring is provided on the substrate support so as to surround the periphery of the substrate on the substrate support. may be placed on
  • the temperature of the substrate support is adjusted during the plasma processing, and the temperature of the substrate is adjusted via this substrate support.
  • temperature control of the edge ring is also important because the temperature of the edge ring affects the plasma processing result of the substrate periphery.
  • the temperature of the edge ring is also adjusted via the substrate support.
  • a heat transfer gas such as He gas is supplied between the substrate support and the substrate and the edge ring so that the temperatures of the substrate and the edge ring are efficiently adjusted through the substrate support.
  • the temperature of at least one of the substrate and the edge ring may not be adjusted sufficiently even with the use of the heat transfer gas as described above.
  • the technology according to the present disclosure efficiently adjusts the temperature of the object to be temperature-adjusted, which is at least one of the substrate and the edge ring, during plasma processing.
  • FIGS. 1 and 2 are longitudinal sectional views showing the outline of the configuration of a processing module as a plasma processing apparatus according to the first embodiment. Note that FIGS. 1 and 2 show cross sections of different portions of a wafer support table, which will be described later.
  • the processing module 1 in FIGS. 1 and 2 performs plasma processing such as etching and film formation on a wafer W as a substrate.
  • the processing module 1 includes a plasma processing chamber 100 as a processing container, gas supply units 120 and 130, an RF (Radio Frequency) power supply unit 140, and an exhaust system 150. Further, the processing module 1 includes a wafer support table 101 and an upper electrode 102 as substrate supports.
  • the wafer support table 101 is arranged in the lower region of the plasma processing space 100s in the plasma processing chamber 100 configured to be depressurized.
  • Upper electrode 102 is arranged above wafer support 101 . Also, the top electrode 102 may function as part of the ceiling of the plasma processing chamber 100 .
  • the wafer support 101 is configured to support the wafer W in the plasma processing space 100s.
  • the wafer support 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, legs 106, and a lifter 107 is provided.
  • the wafer support table 101 also includes a temperature adjustment unit configured to adjust the temperature of the electrostatic chuck 104 (for example, the temperature of the central upper surface 1041 ).
  • the temperature adjuster includes, for example, heaters, channels, or a combination thereof.
  • a temperature control fluid such as a refrigerant or a heat transfer gas flows through the flow path.
  • the lower electrode 103 is made of a conductive material such as aluminum, and fixed to the insulator 105 .
  • a flow path 108 for the temperature control fluid is formed, which constitutes a part of the temperature control section.
  • a temperature control fluid is supplied to the flow path 108 from, for example, a chiller unit (not shown) provided outside the plasma processing chamber 100 .
  • the temperature-controlled fluid supplied to the flow path 108 is returned to the chiller unit.
  • the electrostatic chuck 104, the wafer W placed on the electrostatic chuck 104, and the edge ring E are cooled to a predetermined temperature by circulating low-temperature brine as a temperature control fluid in the flow path 108. can be done.
  • the electrostatic chuck 104, the wafer W placed on the electrostatic chuck 104, and the edge ring E are heated to a predetermined temperature. can do.
  • the electrostatic chuck 104 is a member configured to attract and hold the wafer W by electrostatic force, and is provided on the lower electrode 103 .
  • the electrostatic chuck 104 is formed such that the upper surface of the central portion is higher than the upper surface of the peripheral portion.
  • the upper surface 104 1 of the central portion of the electrostatic chuck 104 serves as a wafer mounting surface on which the wafer W is mounted, and the upper surface 104 2 of the peripheral portion of the electrostatic chuck 104 serves as a ring mounting surface on which the edge ring E is mounted. face.
  • the edge ring E is an annular member arranged adjacent to the wafer W so as to surround the wafer W placed on the upper surface 1041 of the central portion of the electrostatic chuck 104 .
  • the electrostatic chuck 104 is an example of a fixing portion that fixes the wafer W to the upper surface 104 1 at the center of the electrostatic chuck 104 , that is, the wafer mounting surface.
  • An electrode 109 is provided in the center of the electrostatic chuck 104 .
  • a DC voltage is applied to the electrode 109 from a DC power supply (not shown).
  • the wafer W is attracted and held on the upper surface 1041 at the center of the electrostatic chuck 104 by the electrostatic force generated thereby.
  • the electrostatic chuck 104 is configured to be able to attract and hold the edge ring E by electrostatic force, and is provided with an electrode (not shown) for holding the edge ring E on the wafer support 101 by electrostatic attraction.
  • a heat transfer gas such as He gas is supplied to the upper surface 1042 of the peripheral portion of the electrostatic chuck 104 to the rear surface of the edge ring E placed on the upper surface 1042 .
  • a feed hole (not shown) is formed.
  • a heat transfer gas is supplied from a gas supply section (not shown) through the gas supply holes.
  • a gas supply may include one or more gas sources and one or more pressure controllers.
  • the gas supply is configured to supply heat transfer gas, for example from a gas source, to the gas supply holes via a pressure controller.
  • the central portion of the electrostatic chuck 104 is formed, for example, to have a smaller diameter than the diameter of the wafer W, and the wafer W is placed on the upper surface (hereinafter referred to as wafer mounting surface) 104 1 of the central portion of the electrostatic chuck 104 .
  • wafer mounting surface 104 1 of the central portion of the electrostatic chuck 104 .
  • the peripheral edge of the wafer W protrudes from the central portion of the electrostatic chuck 104 .
  • the edge ring E has, for example, a step formed in its upper portion, and the upper surface of the outer peripheral portion is formed higher than the upper surface of the inner peripheral portion.
  • the inner peripheral portion of the edge ring E is formed so as to go under the peripheral portion of the wafer W projecting from the central portion of the electrostatic chuck 104 .
  • a heater (specifically, a resistance heating element) forming part of the temperature control mechanism may be provided inside the electrostatic chuck 104.
  • the electrostatic chuck 104 has, for example, a configuration in which a wafer attracting electrode 109 and an edge ring attracting electrode are sandwiched between insulating materials made of an insulating material, and a heater is embedded.
  • the central portion of the electrostatic chuck 104 provided with the electrode 109 for attracting the wafer and the peripheral portion of the electrostatic chuck 104 provided with the electrode for attracting the edge ring may be integrally formed. , may be separate.
  • the insulator 105 is a disk-shaped member made of ceramic or the like, to which the lower electrode 103 is fixed.
  • the insulator 105 is formed to have the same diameter as the lower electrode 103, for example.
  • the leg 106 is a cylindrical member made of ceramic or the like, and supports the electrostatic chuck 104 via the lower electrode 103 and insulator 105 .
  • the legs 106 are formed, for example, to have an outer diameter equal to that of the insulator 105 and support the periphery of the insulator 105 .
  • the lifter 107 is a lifting member that moves up and down with respect to the wafer mounting surface 1041 of the electrostatic chuck 104, and is formed in a columnar shape, for example.
  • the lifter 107 can support the wafer W with its upper end protruding from the wafer mounting surface 1041 when lifted.
  • the lifter 107 can transfer the wafer W between the electrostatic chuck 104 and an external transfer mechanism (not shown).
  • Three or more lifters 107 are provided at intervals, and are provided so as to extend in the vertical direction.
  • Each lifter 107 is connected to a support member 110 that supports the lifter 107 . Further, the support member 110 is connected to a drive unit 111 that generates driving force for raising and lowering the support member 110 and raises and lowers the plurality of lifters 107 .
  • the drive unit 111 has, for example, a motor (not shown) as a drive source that generates the drive force.
  • the lifter 107 is inserted through an insertion hole 112 whose upper end is open to the wafer mounting surface 1041 of the electrostatic chuck 104 .
  • the insertion hole 112 is formed, for example, so as to penetrate the central portion of the electrostatic chuck 104 , the lower electrode 103 and the insulator 105 .
  • the lifter 107 , the support member 110 and the drive unit 111 constitute an elevating mechanism for elevating the wafer W with respect to the wafer mounting surface 1041 .
  • a heat transfer medium composed of at least one of a liquid medium and a fluid solid medium is applied to the wafer mounting surface 104 1 via the wafer support table 101 .
  • a heat transfer layer D is formed from the heat transfer medium.
  • the wafer mounting surface 1041 of the electrostatic chuck 104 of the wafer support table 101 is formed with a supply port 113 for the heat transfer medium, as shown in FIG.
  • a plurality of supply ports 113 are provided on the wafer mounting surface 1041 .
  • a groove 114 may be provided on the wafer mounting surface 104 1 . The groove 114 is formed so that the heat transfer medium spreads along the wafer mounting surface 104 1 through the groove 114 .
  • a channel 115 is provided, one end of which is in fluid communication with each of the supply ports 113. As shown in FIG. The other end of the channel 115 is fluidly connected to the gas supply section 120, for example.
  • the channel 115 has, for example, a thin end portion (specifically, for example, a portion located inside the electrostatic chuck 104 ) on the wafer mounting surface 104 1 side. The medium is supplied to the wafer mounting surface 1041 through the supply port 113 by capillary action. Note that the channel 115 is formed, for example, across the electrostatic chuck 104 , the lower electrode 103 and the insulator 105 .
  • the gas supply 120 may include one or more gas sources 121 and one or more flow controllers 122 .
  • the gas supply unit 120 supplies, for example, one or more gases for generating the above-described heat transfer medium (hereinafter referred to as heat transfer medium generation gas) from the corresponding gas sources 121. They are configured to be supplied to the wafer support table 101 through corresponding flow controllers 122 .
  • Each flow controller 122 may include, for example, a mass flow controller or a pressure-controlled flow controller.
  • the gas supply 120 may include one or more flow modulation devices that modulate or pulse the flow of one or more heat transfer medium generating gases.
  • the heat transfer medium generating gas supplied from the gas supply unit 120 is cooled in the flow path 115 by, for example, the lower electrode 103 cooled by the temperature control fluid in the flow path 108, and liquefied or solidified. It changes to a heat transfer medium composed of at least one of a medium and a fluid solid medium. "Liquid” includes sol and gel using a liquid as a dispersion medium. As described above, the heat transfer medium is supplied to the wafer mounting surface 1041 through the supply port 113 by, for example, capillary action to form the heat transfer layer D. As shown in FIG.
  • the flow path 108 may function at least in part of a cooling mechanism configured to cool the heat transfer medium generating gas in the flow path 115 and transform it into a heat transfer medium, and the gas supply section 120 may serve as a wafer. It can function as at least a part of the heat transfer layer forming part configured to form the heat transfer layer D on the mounting surface 104 1 .
  • the upper electrode 102 described above also functions as a shower head that supplies various gases from the gas supply unit 130 to the plasma processing space 100s.
  • the top electrode 102 has a gas inlet 102a, a gas diffusion chamber 102b, and a plurality of gas inlets 102c.
  • Gas inlet 102a is, for example, in fluid communication with gas supply 130 and gas diffusion chamber 102b.
  • a plurality of gas inlets 102c are in fluid communication with the gas diffusion chamber 102b and the plasma processing space 100s.
  • the upper electrode 102 is configured to supply various gases from the gas inlet 102a to the plasma processing space 100s through the gas diffusion chamber 102b and the plurality of gas inlets 102c.
  • the gas supply 130 may include one or more gas sources 131 and one or more flow controllers 132 .
  • gas supply 130 is configured, for example, to supply one or more process gases from respective gas sources 131 through respective flow controllers 132 to gas inlets 102a. be done.
  • Each flow controller 132 may include, for example, a mass flow controller or a pressure-controlled flow controller.
  • gas supply 130 may include one or more flow modulation devices that modulate or pulse the flow of one or more process gases.
  • RF power supply 140 provides RF power, eg, one or more RF signals, to one or more electrodes, such as bottom electrode 103, top electrode 102, or both bottom electrode 103 and top electrode 102. configured to Thereby, plasma is generated from one or more processing gases supplied to the plasma processing space 100s. Accordingly, RF power supply 140 may function as at least part of a plasma generator configured to generate plasma from one or more process gases in plasma processing chamber 100 .
  • the RF power supply unit 140 includes, for example, two RF generators 141a, 141b and two matching circuits 142a, 142b.
  • RF power supply 140 is configured to supply a first RF signal from first RF generator 141a to bottom electrode 103 through first matching circuit 142a.
  • the first RF signal may have a frequency within the range of 27MHz-100MHz.
  • the RF power supply 140 is configured to supply a second RF signal from the second RF generator 141b to the lower electrode 103 via the second matching circuit 142b.
  • the second RF signal may have a frequency within the range of 400 kHz to 13.56 MHz.
  • a voltage pulse other than RF may be supplied instead of the second RF signal.
  • the voltage pulse may be a negative DC voltage.
  • the voltage pulse may be a triangular wave, an impulse.
  • RF power supply 140 provides a first RF signal from an RF generator to bottom electrode 103, a second RF signal from another RF generator to bottom electrode 103, and A third RF signal may be configured to be supplied to the lower electrode 103 from yet another RF generator.
  • a DC voltage may be applied to the top electrode 102 .
  • the amplitude of one or more RF signals may be pulsed or modulated.
  • Amplitude modulation may involve pulsing the RF signal amplitude between an on state and an off state, or between two or more different on states.
  • the exhaust system 150 may be connected to an exhaust port 100e provided at the bottom of the plasma processing chamber 100, for example.
  • Exhaust system 150 may include a pressure valve and a vacuum pump.
  • Vacuum pumps may include turbomolecular pumps, roughing pumps, or combinations thereof.
  • control unit 160 processes computer-executable instructions that cause processing module 1 to perform the various steps described in this disclosure. Controller 160 may be configured to control each of the other elements of processing module 1 to perform the various steps described herein. In one embodiment, part or all of the controller 160 may be included in other elements of the processing module 1 .
  • Control unit 160 may include computer 170, for example.
  • the computer 170 may include a processing unit (CPU: Central Processing Unit) 171, a storage unit 172, and a communication interface 173, for example.
  • the processing unit 171 can be configured to perform various control operations based on programs stored in the storage unit 172 .
  • the storage unit 172 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof.
  • the communication interface 173 may communicate with other elements of the processing module 1 via a communication line such as a LAN (Local Area Network).
  • FIG. 3 is a flow chart for explaining an example of the above wafer processing.
  • 4 to 7 are diagrams showing the state of the processing module 1 during the wafer processing. Note that the following processing is performed under the control of the control unit 160 .
  • the wafer W is mounted on the wafer mounting surface 1041 of the wafer support table 101 (step S1). Specifically, the wafer W is loaded into the plasma processing chamber 100 by a transport mechanism (not shown) and placed on the wafer placement surface 104 1 of the electrostatic chuck 104 by raising and lowering the lifter 107 . . After that, the inside of the plasma processing chamber 100 is depressurized to a predetermined degree of vacuum (pressure p1) by the exhaust system 150 .
  • pressure p1 a predetermined degree of vacuum
  • a heat transfer medium composed of at least one of a liquid medium and a fluid solid medium is placed between the wafer mounting surface 104 1 and the wafer support table 101 . It is supplied between the back surface of the wafer W and the heat transfer layer D is formed (step S2).
  • the wafer W is held on the wafer support table 101 .
  • a DC voltage is applied to the electrode 109 of the electrostatic chuck 104, and the wafer W is electrostatically attracted to the electrostatic chuck 104 by electrostatic force.
  • the temperature of the wafer mounting surface 1041 is adjusted to the temperature T1, and therefore the inside of the flow path 115 is also adjusted to the temperature T1.
  • the temperature T1 is set to a temperature at which the process can be effectively performed, for example, equal to the temperature of the wafer mounting surface 1041 during the process.
  • the heat transfer medium generating gas is supplied from the gas supply unit 120 to the flow path 115 of the wafer support 101 at a temperature T2 (>T1) and a pressure p2 (>p1). be.
  • the heat transfer medium generating gas supplied to the flow path 115 is cooled to a temperature T1 in the flow path 115, and formed into a heat transfer medium composed of at least one of a liquid medium and a fluid solid medium. Become. Then, this heat transfer medium is supplied to the wafer mounting surface 1041 through the supply port 113 by, for example, capillary action.
  • the heat transfer medium supplied to the wafer-mounting surface 104-1 spreads along the wafer-mounting surface 104-1 due to the capillary action caused by the gap between the wafer-mounting surface 104-1 and the back surface of the wafer W, thereby conducting heat transfer .
  • Layer D is formed.
  • the heat transfer layer D is deformable because it is made of a heat transfer medium that is composed of at least one of a liquid medium and a fluid solid medium.
  • the gap between the wafer mounting surface 104-1 and the back surface of the wafer W is too narrow, the heat transfer medium will be moved along the wafer mounting surface 104-1 by capillary action due to the influence of the viscosity of the heat transfer medium. may not be able to spread out. Therefore, as described above, by providing the groove 114 in the wafer mounting surface 1041, the gap between the wafer mounting surface 1041 and the back surface of the wafer W can be widened. can be spread out appropriately along the wafer mounting surface 104 1 by . Further, a heat transfer medium having a low viscosity may be used so that the transfer of the heat transfer medium by capillarity is facilitated.
  • the supply of the heat transfer medium to the wafer mounting surface 1041 (specifically, the supply of the heat transfer medium generating gas from the gas supply unit 120) is, for example, when the supply amount reaches a predetermined amount (specifically, is stopped when the supply time of the heat transfer medium generating gas from the gas supply unit 120 exceeds a predetermined time.
  • monitoring means such as a camera is used to monitor leakage of the heat transfer medium from between the wafer mounting surface 1041 and the back surface of the wafer W, and when the leakage is monitored, the wafer is mounted.
  • the supply of the heat transfer medium to the placement surface 104-1 may be stopped.
  • the monitoring means such as a camera, is arranged, for example, outside the plasma processing chamber 100 and performs monitoring or imaging through an optical window provided in the plasma processing chamber 100 .
  • step S3 plasma processing is performed on the wafer W on the wafer mounting surface 1041 on which the heat transfer layer D is formed. Specifically, the plasma processing is performed on the wafer W on which the heat transfer layer D is formed between the wafer mounting surface 1041 and the wafer W. As shown in FIG.
  • the processing gas is supplied from the gas supply unit 130 to the plasma processing space 100s through the upper electrode 102 while the wafer W is continuously held on the wafer support table 101, for example.
  • high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103 .
  • the processing gas is excited and plasma P is generated.
  • high-frequency power LF for attracting ions may be supplied from the RF power supply unit 140 .
  • the plasma processing is applied to the wafer W by the action of the generated plasma P. As shown in FIG.
  • the wafer mounting surface 1041 is adjusted to a predetermined temperature T1 by the temperature control fluid flowing through the flow path 108 in order to control the temperature of the wafer W.
  • the lower surface, that is, the back surface, is in close contact with the heat transfer layer D.
  • the heat transfer layer D is formed of a heat transfer medium, and since the heat transfer medium is composed of at least one of a liquid medium and a fluid solid medium, High thermal conductivity.
  • the heat transfer layer D when the heat transfer layer D is used, compared to the conventional case where a heat transfer gas such as He flows between the wafer mounting surface 104 1 and the back surface of the wafer W, the heat transfer gas is transferred through the wafer mounting surface 104 1 . Therefore, the temperature of the wafer W can be efficiently adjusted. Specifically, even if a large amount of heat is input from the plasma P to the wafer W during plasma processing, the temperature of the wafer W can be kept constant through the temperature control of the wafer mounting surface 1041 . Further, when the set temperature of the wafer W is changed during plasma processing, the temperature of the wafer W can be immediately changed to the changed set temperature through the temperature control of the wafer mounting surface 1041. .
  • the pressure p3 applied to the heat transfer layer D during plasma processing is 0.1 Torr to 100 Torr, including the pressure applied to the heat transfer layer D by electrostatically attracting the wafer W.
  • a DC voltage may be applied to the electrode for attracting the edge ring of the electrostatic chuck 104 so that the edge ring E may be electrostatically attracted to the electrostatic chuck 104 .
  • a heat transfer gas may be supplied toward the back surface of the edge ring E from gas supply holes (not shown) formed in the top surface 1042 of the peripheral portion of the electrostatic chuck 104 .
  • the supply of high-frequency power HF from the RF power supply unit 140 and the supply of processing gas from the gas supply unit 130 are stopped. If the high-frequency power LF is being supplied during the plasma processing, the supply of the high-frequency power LF is also stopped. Also, the inside of the plasma processing chamber 100 is depressurized to a predetermined degree of vacuum (pressure p1) by the exhaust system 150 .
  • the pressure p1 is, for example, less than 0.001 Torr. If the electrostatic chuck 104 is sucking and holding the edge ring E and supplying the heat transfer gas to the back surface of the edge ring E during plasma processing, at least one of these is stopped. You may do so.
  • the wafer W is separated from the wafer mounting surface 1041 , and the heat transfer layer D is vaporized and removed (step S4).
  • the heat transfer layer D is removed by vaporization.
  • the wafer W is lifted by the lifter 107, and as shown in FIG. , is separated from the wafer mounting surface 104 1 .
  • the heat transfer layer D is exposed to a reduced pressure atmosphere, specifically an atmosphere with a pressure p1 of less than 0.001 Torr, whereby it is vaporized and removed.
  • the heat transfer medium forming the heat transfer layer D is a liquid or a fluid solid at a temperature T1 at a pressure p3 of 0.1 to 100 Torr and less than 0.001 Torr. is used at a pressure p1 which is gaseous at temperature T1.
  • the heat transfer medium generating gas for generating the heat transfer medium forming the heat transfer layer D includes, for example, at least one of B (boron) and C (carbon), which are constituent atoms of the heat transfer layer D, At least one of H (hydrogen), N (nitrogen), and O (oxygen) constituting gas components is included. Furthermore, the heat transfer medium generating gas preferably consists of components that do not interfere with the plasma processing.
  • the removal of the heat transfer layer D from the wafer mounting surface 104E1 includes at least one of exposing the heat transfer layer D to plasma, heating the heat transfer layer D, and irradiating the heat transfer layer D with light. It may be used in place of or in combination with exposing the heat transfer layer D to the reduced pressure atmosphere.
  • the wafer W is unloaded (step S5). Specifically, the wafer W is transferred from the lifter 107 to a transport mechanism (not shown) and unloaded from the plasma processing chamber 100 by the transport mechanism. This completes a series of wafer processing.
  • a heat transfer medium composed of at least one of a liquid medium and a fluid solid medium is placed on the wafer through the wafer support table 101 during plasma processing.
  • a heat transfer layer D is formed between the surface 1041 and the back surface of the wafer W. Since the heat transfer layer D is made of the heat transfer medium as described above, it has a higher thermal conductivity than the heat transfer layer made of heat transfer gas. Further, since the heat transfer layer D is deformable as described above, it can be brought into close contact with the lower surface of the wafer W. As shown in FIG. Therefore, according to this embodiment, heat can be efficiently exchanged between the wafer W and the wafer mounting surface 1041 via the heat transfer layer D.
  • the temperature of the wafer W can be efficiently adjusted via the wafer mounting surface 1041 during plasma processing.
  • the wafer mounting surface 104-1 can efficiently absorb heat from the wafer W through the heat transfer layer D, and the wafer mounting surface 104-1 can absorb heat through the heat transfer layer D. can heat the wafer W efficiently.
  • the heat transfer medium forming the heat transfer layer D is composed of a liquid or a fluid solid, clogging of the flow path 115 by the heat transfer medium can be suppressed. can. Further, since the heat transfer layer D is vaporized and removed when the wafer W is separated from the wafer mounting surface 1041 , there is no need to provide a separate step for removing the heat transfer layer D. FIG. Therefore, throughput can be improved.
  • the wafer W is attracted and held on the wafer mounting surface 104 1 by the electrostatic force of the electrostatic chuck 104 during plasma processing or the like.
  • the heat transfer layer D and the lower surface of the wafer W can be brought into closer contact with each other, so that the heat removal efficiency from the wafer W via the wafer mounting surface 1041 and the heat transfer layer D or the heating efficiency of the wafer W can be further improved. can be improved.
  • the heat transfer layer D and the lower surface of the wafer W can be brought into close contact with each other by attraction and holding by the electrostatic chuck 104 as described above. Therefore, even if the wafer W is warped, the heat can be removed from the wafer W or the wafer W can be heated efficiently.
  • FIG. 8 is a diagram for explaining another example of the form of supply of the heat transfer medium.
  • the heat transfer medium generating gas is supplied to the wafer support 101 from the outside and changed to the heat transfer medium within the wafer support 101.
  • the heat transfer medium itself may be supplied from the medium supply unit 180 to the wafer support 101 (specifically, the flow path 115).
  • the media supply 180 may include one or more sources 181 of heat transfer media and one or more flow controllers 182 .
  • media supply 180 supplies, for example, one or more heat transfer media from respective sources 181 through respective flow controllers 182 to wafer support 101 . Configured.
  • media supply 180 may include one or more flow modulation devices that modulate or pulse the flow of one or more heat transfer media.
  • the heat transfer medium in the wafer support table 101 is supplied to the wafer mounting surface 1041 by capillarity.
  • the wafer of the heat transfer medium in the wafer support 101 is controlled by the supply pressure of the heat transfer medium generating gas to the wafer support 101 from the outside or the supply pressure of the heat transfer medium to the wafer support 101 from the outside. Supply to the mounting surface 104-1 may also be performed.
  • the heat transfer medium in the wafer support table 101 is supplied to the wafer mounting surface 1041 by the supply pressure of the heat transfer medium to the wafer support table 101 from the outside, the heat transfer medium is as follows. You can use things. That is, a heat transfer medium mixed with powder having higher thermal conductivity than the base material of the heat transfer medium may be used. Specifically, the powder having higher thermal conductivity than the base material of the heat transfer medium is, for example, carbon nanotube powder.
  • the thermal conductivity is A mist containing high powders may be used as the heat transfer medium generating gas.
  • the heat transfer medium can be changed into a heat transfer medium mixed with powder having high thermal conductivity .
  • FIG. 9 and 10 are diagrams showing specific examples of the groove 114.
  • FIG. A plurality of support columns 116 for supporting the back surface of the wafer W may be formed on the wafer mounting surface 1041 of the electrostatic chuck 104, as shown in FIG .
  • recesses formed between support posts 116 constitute grooves 114 .
  • a porous body (specifically, for example, porous ceramics) 117 may be arranged in the groove 114 to fill the groove 114 .
  • the wafer mounting surface may be made of a porous material at portions other than the grooves 114 (specifically, for example, the tops of the support columns 116). Moreover, when the groove 114 is not provided on the wafer mounting surface, the entire surface of the wafer mounting surface may be formed of a porous material.
  • the heat transfer layer D is formed on the entire wafer mounting surface 104-1 including, for example, the central region and the peripheral region of the wafer mounting surface 104-1 .
  • the heat transfer layer D may be formed only in the region of the part.
  • the heat transfer layer D may be formed only in the central region of the wafer mounting surface 1041 facing the central portion of the wafer W.
  • the heat transfer layer D is formed only in the peripheral area of the wafer mounting surface 1041 facing the peripheral edge of the wafer W. good too.
  • the heat transfer layer D can be formed only in the partial area. .
  • the heat transfer layer D has a uniform thickness over the entire wafer mounting surface 104-1 including, for example, the central region and the peripheral region of the wafer mounting surface 104-1 .
  • the thickness may differ within the wafer mounting surface 104-1 .
  • the heat transfer layer D is formed more in the central region of the wafer mounting surface 1041 facing the central portion of the wafer W than in the peripheral region. You can make it thinner.
  • the peripheral edge region of the wafer mounting surface 1041 facing the peripheral edge of the wafer W has a higher heat transfer layer thickness than the central region.
  • the heat transfer layer D may be thinned. In this way, by thinning the heat transfer layer D only in a partial region such as the central region of the wafer mounting surface 104-1 , the heat exchange efficiency between the wafer mounting surface 104-1 and the wafer W can be reduced. The heat exchange efficiency can be increased only in the partial area.
  • the depth of the grooves 114 is made different for each region on the wafer mounting surface 104-1 , so that only a part of the regions such as the central region can transmit. Thermal layer D can be made thinner.
  • the thickness of the porous material is made different for each region of the wafer mounting surface 104-1 , whereby the wafer can be mounted.
  • the heat exchange efficiency between the wafer mounting surface 104-1 and the wafer W can be varied within the plane in the same manner as when the depth of the grooves 114 is varied for each region on the mounting surface 104-1 .
  • the heat transfer layer D is formed by mixing a high thermal conductivity conductive medium and a low thermal conductive medium. Different mixing ratios of the modulus conducting media may be used. This also makes it possible to vary the heat exchange efficiency between the wafer mounting surface 1041 and the wafer W within the surface.
  • the density of the grooves 114 may be varied for each region on the wafer mounting surface 1041 .
  • the density of support columns 116 may be varied for each region on wafer mounting surface 1041 .
  • the ratio of the portion where the heat transfer layer is formed can be made different for each region on the wafer mounting surface 104-1 , and the heat exchange efficiency between the wafer mounting surface 104-1 and the wafer W can be changed in-plane. can be different.
  • the heat transfer layer D may have electrical insulation. As a result, a residual charge is generated in the heat transfer layer D, and the residual charge can be used for electrostatic attraction of the wafer W.
  • FIG. Moreover, the heat transfer layer D may have conductivity. As a result, residual charges generated on the wafer W through the heat transfer layer D can be removed.
  • the heat transfer layer D may be configured by wrapping a conductive portion with an electrically insulating portion. As a result, high thermal conductivity is ensured in the electrically conductive portion (generally, the higher the electrical conductivity, the higher the thermal conductivity), and the electrically insulating portion allows the residual charge generated in the portion to cool the wafer W. The can be electrostatically adsorbed.
  • the wafer mounting surface 1041 of the wafer support table 101 may have a constant height in the central region and the peripheral region, that is, may be macroscopically flat, or may be high in the central region. Alternatively, the peripheral region may be elevated.
  • a wafer W having a temperature higher than that of the wafer mounting surface 104-1 is mounted on the wafer mounting surface 104-1 , and the wafer W is , the wafer W and the wafer mounting surface 1041 can be brought into close contact with each other when the rear surface is cooled and thermally deformed into a convex shape.
  • the wafer mounting surface 104-1 is formed in a concave shape with a low central region, a wafer W having a temperature lower than that of the wafer mounting surface 104-1 is mounted on the wafer mounting surface 104-1 , and the wafer W
  • the wafer W and the wafer mounting surface 1041 can be brought into close contact with each other when the back surface is heated and thermally deformed into a concave shape.
  • the heat transfer layer D may be formed on the entire wafer mounting surface 104-1 , or may be formed on part of the wafer mounting surface 104-1 (specifically, for example, the central region or the peripheral region). either one).
  • a heat transfer gas such as He gas may be supplied to a region of the wafer mounting surface 1041 where the heat transfer layer D is not formed.
  • the electrostatic chuck 104 that attracts and holds the wafer W by electrostatic force generated by applying a DC voltage to the internal electrode 109 serves as a fixing portion that holds or fixes the wafer W on the wafer mounting surface 1041.
  • the fixing portion for electrically holding or fixing the wafer W is not limited to holding by electrostatic force, but may be holding by Johnsen-Rahbek force.
  • the fixing portion is not limited to the one that holds electrically as described above.
  • the fixing part may be a physical fixing part such as a clamp.
  • the clamp is to fix the wafer W by sandwiching the wafer W between the clamp and the wafer support 101 . Note that the fixing portion may be omitted.
  • FIG. 11 is a plan view schematically showing the configuration of a plasma processing system including processing modules as a plasma processing apparatus according to the second embodiment.
  • the atmospheric part 10 includes an atmospheric module that performs desired processing on a wafer W as a substrate under atmospheric pressure.
  • the decompression unit 11 includes a processing module 1A that performs desired processing on the wafer W under a decompressed atmosphere (vacuum atmosphere).
  • the load lock modules 20 and 21 are provided to connect the loader module 30 included in the atmosphere section 10 and the transfer module 50 included in the decompression section 11 via gate valves (not shown).
  • the load lock modules 20, 21 are configured to hold the wafer W temporarily. Further, the load lock modules 20 and 21 are configured so that the inside can be switched between an atmospheric pressure atmosphere and a reduced pressure atmosphere.
  • the atmospheric part 10 has a loader module 30 having a transport mechanism 40, which will be described later, and a load port 32 on which a FOUP (FOUP: Front Opening Unified Pod) 31 is placed.
  • the FOUP 31 is capable of storing a plurality of wafers W.
  • FIG. An orienter module (not shown) for adjusting the horizontal direction of the wafer W, a buffer module (not shown) for temporarily storing a plurality of wafers W, and the like are connected to the loader module 30. good.
  • the loader module 30 has a rectangular housing, and the inside of the housing is maintained at atmospheric pressure.
  • a plurality of, for example, five load ports 32 are arranged side by side on one side surface that constitutes the long side of the housing of the loader module 30 .
  • Load-lock modules 20 and 21 are arranged side by side on the other side surface constituting the long side of the housing of the loader module 30 .
  • a transport mechanism 40 capable of transporting the wafer W is provided inside the housing of the loader module 30 .
  • the transfer mechanism 40 has a transfer arm 41 that supports the wafer W during transfer, a turntable 42 that rotatably supports the transfer arm 41, and a base 43 on which the turntable 42 is mounted.
  • a guide rail 44 extending in the longitudinal direction of the loader module 30 is provided inside the loader module 30 .
  • the base 43 is provided on guide rails 44 , and the transport mechanism 40 is configured to be movable along the guide rails 44 .
  • the decompression unit 11 accommodates a transfer module 50 for transferring the wafer W and the edge ring E, a processing module 1A as a plasma processing apparatus for performing plasma processing on the wafer W transferred from the transfer module 50, and the edge ring E. It has a storage module 60 as a storage section.
  • the interiors of the transfer module 50 and the processing module 1 (specifically, the interiors of the decompression transfer chamber 51 and the plasma processing chamber 100, which will be described later) are each maintained in a reduced pressure atmosphere, and the interior of the storage module 60 is also maintained in a reduced pressure atmosphere.
  • a plurality of processing modules 1A for example six, are provided, and a plurality of storage modules 60, for example two, are provided.
  • the transfer module 50 includes a reduced pressure transfer chamber 51 having a polygonal (pentagonal in the illustrated example) housing, and the reduced pressure transfer chamber 51 is connected to the load lock modules 20 and 21 .
  • the transfer module 50 transfers the wafer W loaded into the load lock module 20 to one of the processing modules 1A, and transfers the wafer W, which has undergone desired plasma processing in the processing module 1A, through the load lock module 21. It is carried out to the atmospheric part 10 .
  • the transfer module 50 transfers the edge ring E in the storage module 60 to one of the processing modules 1A and unloads the edge ring E to be replaced in the processing module 1A to the storage module 60 .
  • the processing module 1A is connected to the transfer module 50 via the gate valve 61.
  • the difference between the processing module 1A and the processing module 1 described with reference to FIG. 1 etc. will be described later.
  • the storage module 60 is connected to the transfer module 50 via a gate valve 62.
  • a transfer mechanism 70 configured to transfer the wafer W and the edge ring E is provided inside the reduced-pressure transfer chamber 51 of the transfer module 50 .
  • the transfer mechanism 70 like the transfer mechanism 40 described above, includes a transfer arm 71 that supports the wafer W and the edge ring E during transfer, a turntable 72 that rotatably supports the transfer arm 71, and a base on which the turntable 72 is mounted. a platform 73;
  • a guide rail 74 extending in the longitudinal direction of the transfer module 50 is provided inside the reduced-pressure transfer chamber 51 of the transfer module 50 .
  • the base 73 is provided on guide rails 74 , and the transport mechanism 70 is configured to be movable along the guide rails 74 .
  • the transfer arm 71 receives the wafer W held in the load lock module 20 and carries it into the processing module 1A. Also, the transfer arm 71 receives the wafer W held in the processing module 1A and unloads it to the load lock module 21 . Further, in the transfer module 50, the transfer arm 71 receives the edge ring E in the storage module 60 and carries it into the processing module 1A. Further, the transport arm 71 receives the edge ring E held in the processing module 1A and transports it to the storage module 60. FIG.
  • controller 80 processes computer-executable instructions that cause plasma processing system PS to perform various operations described in this disclosure. Controller 80 may be configured to control each of the other elements of plasma processing system PS to perform the various processes described herein. In one embodiment, part or all of controller 80 may be included in other elements of plasma processing system PS. In one embodiment, controller 80 also processes computer-executable instructions that cause processing module 1A to perform various steps described in this disclosure. Controller 80 may be configured to control each of the other elements of processing module 1A to perform the various steps described herein. In one embodiment, part or all of the controller 80 may be included in other elements of the processing module 1A. The controller 80 may include a computer 90, for example.
  • the computer 90 may include a processing unit (CPU) 91, a storage unit 92, and a communication interface 93, for example.
  • the processing unit 91 can be configured to perform various control operations based on programs stored in the storage unit 92 .
  • Storage unit 92 may include RAM, ROM, HDD, SSD, or a combination thereof.
  • the communication interface 93 may communicate with other elements of the plasma processing system PS via a communication line such as LAN.
  • the wafer W is taken out from the desired FOUP 31 and loaded into the load lock module 20 by the transport mechanism 40 . After that, the inside of the load lock module 20 is sealed and the pressure is reduced. After that, the inside of the load lock module 20 and the inside of the transfer module 50 are communicated.
  • the wafer W is held by the transport mechanism 70 and transported from the load lock module 20 to the transfer module 50 .
  • the gate valve 61 is opened, and the wafer W is carried into the desired processing module 1A by the transfer mechanism 70. After that, the gate valve 61 is closed, and the desired processing is performed on the wafer W in the processing module 1A. The processing performed on the wafer W in this processing module 1A will be described later.
  • the gate valve 61 is opened, and the transfer mechanism 70 unloads the wafer W from the processing module 1A. After that, the gate valve 61 is closed.
  • the wafer W is loaded into the load lock module 21 by the transport mechanism 70 .
  • the inside of the load lock module 21 is sealed and opened to the atmosphere. After that, the inside of the load lock module 21 and the inside of the loader module 30 are communicated with each other.
  • the wafer W is held by the transfer mechanism 40 and returned from the load lock module 21 via the loader module 30 to the desired FOUP 31 to be accommodated. This completes a series of wafer processing in the plasma processing system PS.
  • FIGS. 12 and 13 are longitudinal sectional views showing the outline of the configuration of the processing module 1A. Note that FIGS. 12 and 13 show cross sections of different portions of the wafer support table 101A.
  • the wafer W is the object whose temperature is adjusted via the heat transfer layer D formed by the wafer support 101 and the heat transfer medium.
  • the processing module 1A of FIGS. 12 and 13 differs from the processing module 1 of FIGS. 1 and 2 mainly in the configuration of the wafer support. This difference will be mainly described below.
  • a wafer support table 101A of the processing module 1A includes, for example, a lower electrode 200, an electrostatic chuck 201, an insulator 202 and legs 106, and a lifter 107 and a lifter 203 are provided.
  • the electrostatic chuck 201 has a wafer mounting surface 104 1 in the central portion, and a top surface 201 1 of the peripheral portion serves as a ring mounting surface on which the edge ring E is mounted. Become.
  • the electrostatic chuck 201 is an example of a fixing portion that fixes the edge ring E to the upper surface 2011 of the peripheral portion of the electrostatic chuck 201, that is, the ring mounting surface.
  • the electrostatic chuck 201 is provided with an electrode 109 for holding the wafer W by electrostatic attraction in the center, and an electrode 204 for holding the edge ring E by electrostatic attraction at the periphery.
  • a DC voltage is applied to the electrode 204 from a DC power supply (not shown). Due to the electrostatic force generated thereby, the edge ring E is attracted and held on the upper surface (hereinafter referred to as ring mounting surface) 2011 of the peripheral portion of the electrostatic chuck 201 .
  • the electrodes 204 are, for example, bipolar, including a pair of electrodes, but may also be unipolar.
  • the lifter 203 is a lifting member that moves up and down with respect to the ring mounting surface 2011 of the electrostatic chuck 201, and is formed in a columnar shape, for example.
  • the lifter 203 can support the edge ring E with its upper end protruding from the ring mounting surface 2011 when lifted.
  • the edge ring E can be transferred between the electrostatic chuck 201 and the transport arm 71 of the transport mechanism 70 by the lifter 203 .
  • Three or more lifters 203 are provided at intervals along the circumferential direction of the electrostatic chuck 201 . Also, the lifter 203 is provided so as to extend in the vertical direction.
  • the lifter 203 is connected to a drive section 205 that moves the lifter 203 up and down.
  • the drive unit 205 is provided for each lifter 203, for example. Further, the drive unit 205 has, for example, a motor (not shown) as a drive source that generates a driving force for raising and lowering the lifter 203 .
  • the lifter 203 is inserted through an insertion hole 206 whose upper end is open to the ring mounting surface 2011 of the electrostatic chuck 201 .
  • the insertion hole 206 is formed, for example, so as to penetrate the peripheral portion of the electrostatic chuck 201 , the lower electrode 200 and the insulator 202 .
  • a heat transfer medium supply port 207 is formed on the ring mounting surface 2011 of the electrostatic chuck 201 of the wafer support table 101A.
  • a plurality of supply ports 207 are provided on the ring mounting surface 2011 .
  • a groove 208 may be provided on the ring mounting surface 2011 . The groove 208 is formed so that the heat transfer medium spreads along the ring mounting surface 201 - 1 through the groove 208 .
  • a channel 209 is provided, one end of which is in fluid communication with each of the supply ports 207 .
  • the other end of the channel 209 is fluidly connected to a gas supply section 210, for example.
  • the channel 209 has, for example, a narrow end portion (specifically, for example, a portion located in the electrostatic chuck 201) on the ring mounting surface 2011 side, and the heat transfer in the channel 209 is reduced.
  • the medium is supplied to the ring mounting surface 2011 through the supply port 207 by capillarity.
  • the channel 209 is formed, for example, across the electrostatic chuck 201 , the lower electrode 200 and the insulator 202 .
  • the gas supply 210 may include one or more gas sources 211 and one or more flow controllers 212 .
  • the gas supply unit 210 supplies one or more heat transfer medium generating gases from respective gas sources 211 to the wafer support 101A via respective flow controllers 212.
  • Each flow controller 212 may include, for example, a mass flow controller or a pressure-controlled flow controller.
  • the gas supply 210 may include one or more flow modulation devices that modulate or pulse the flow of one or more heat transfer medium generating gases.
  • the heat transfer medium generating gas supplied from the gas supply unit 210 is cooled in the flow path 209 by, for example, the lower electrode 200 cooled by the temperature control fluid in the flow path 108, and liquefied or solidified. It changes to a heat transfer medium composed of at least one of a medium and a fluid solid medium. As described above, the heat transfer medium is supplied to the ring mounting surface 2011 through the supply port 207 by capillary action, for example, to form the heat transfer layer DA.
  • the flow path 108 may function at least in part of a cooling mechanism configured to cool and transform the heat transfer medium generating gas within the flow path 209 into a heat transfer medium
  • the gas supply section 210 may function as a ring It can function as at least a part of the heat transfer layer forming part configured to form the heat transfer layer DA on the mounting surface 201-1 .
  • FIG. 14 is a flow chart for explaining an example of the above wafer processing.
  • 15 to 17 are diagrams showing the state of the processing module 1A during the wafer processing. Note that the following processing is performed under the control of the control unit 160 .
  • the edge ring E is mounted on the ring mounting surface 2011 of the wafer support table 101A (step S11). Specifically, the edge ring E is carried into the plasma processing chamber 100 by the transport mechanism 70 and is mounted on the ring mounting surface 2011 of the electrostatic chuck 201 by raising and lowering the lifter 203 . After that, the inside of the plasma processing chamber 100 is decompressed to a predetermined degree of vacuum (pressure p11) by the exhaust system 150 .
  • pressure p11 a predetermined degree of vacuum
  • the edge ring E is transported into the plasma processing chamber 100, for example, as follows. That is, first, the edge ring E inside the storage module 60 is held by the transfer arm 71 of the transfer mechanism 70 . Next, the transfer arm 71 holding the edge ring E is inserted into the plasma processing chamber 100 of the processing module 1A through a loading/unloading port (not shown). Then, the edge ring E is transported by the transport arm 71 above the ring mounting surface 2011 of the electrostatic chuck 201 . After that, the lifter 203 is lifted and the transfer arm 71 is pulled out from the plasma processing chamber 100 , whereby the edge ring E is mounted on the ring mounting surface 2011 of the electrostatic chuck 201 .
  • a heat transfer medium composed of at least one of a liquid medium and a fluid solid medium is placed between the ring mounting surface 2011 and the wafer support table 101A. It is supplied between the back surface of the edge ring E and the heat transfer layer DA is formed (step S12).
  • the edge ring E is held by the wafer support 101A.
  • a DC voltage is applied to the electrode 204 of the electrostatic chuck 201, and the edge ring E is electrostatically attracted to the electrostatic chuck 201 by electrostatic force.
  • the temperature of the ring mounting surface 2011 is adjusted to the temperature T11, and therefore the inside of the flow path 209 is also adjusted to the temperature T11.
  • the temperature T11 is set to a temperature at which process treatment can be effectively performed, for example, equal to the temperature of the ring mounting surface 2011 during process treatment.
  • the heat transfer medium generating gas is supplied from the gas supply unit 210 to the flow path 209 of the wafer support 101A at a temperature T12 (>T11) and a pressure p12 (>p11). be done.
  • the heat transfer medium generating gas supplied to the flow path 209 is cooled to a temperature T11 in the flow path 209, and formed into a heat transfer medium composed of at least one of a liquid medium and a fluid solid medium. Become. Then, this heat transfer medium is supplied to the ring mounting surface 2011 through the supply port 207 by capillary action, for example.
  • the heat transfer medium supplied to the ring-mounting surface 201-1 spreads along the ring-mounting surface 201-1 due to the capillary action caused by the gap between the ring-mounting surface 201-1 and the back surface of the edge ring E, and the heat transfer medium spreads along the ring-mounting surface 201-1 .
  • a thermal layer DA is formed.
  • the heat transfer layer DA is deformable like the heat transfer layer D described above.
  • the gap between the ring mounting surface 201-1 and the back surface of the edge ring E can be widened, and the heat transfer medium can be displaced by capillary action. can be appropriately spread along the ring mounting surface 201-1 .
  • the pressure p13 applied to the heat transfer layer DA is 0.1 Torr to 100 Torr, including the pressure applied to the heat transfer layer DA by electrostatically attracting the edge ring E.
  • the supply of the heat transfer medium to the ring mounting surface 201-1 (specifically, the supply of the heat transfer medium generating gas from the gas supply unit 210) is, for example, when the supply amount reaches a predetermined amount (specifically, is stopped when the supply time of the heat transfer medium generating gas from the gas supply unit 210 exceeds a predetermined time.
  • monitoring means such as a camera is used to monitor leakage of the heat transfer medium from between the ring mounting surface 2011 and the back surface of the edge ring E, and when leakage is monitored, the ring The supply of the heat transfer medium to the mounting surface 2011 may be stopped.
  • plasma processing is performed on the wafer W on the upper surface of the electrostatic chuck 201 on which the heat transfer layer DA is formed, that is, the mounting surface (step S13).
  • plasma processing is performed in the same manner as the processing described with reference to FIG. 3 and the like. More specifically, for example, the wafer W is mounted on the wafer mounting surface 104-1 of the wafer support table 101A, and the heat transfer layer D is formed between the wafer mounting surface 104-1 and the back surface of the wafer W. After that, the wafer W is subjected to plasma processing. After that, the heat transfer layer D is vaporized and removed, and the wafer W is unloaded.
  • the ring mounting surface 2011 is adjusted to a predetermined temperature T11 by the temperature control fluid flowing through the channel 108 in order to control the temperature of the edge ring E.
  • the heat transfer layer DA is formed of a heat transfer medium, and since the heat transfer medium is composed of at least one of a liquid medium and a fluid solid medium, High thermal conductivity.
  • the edge is The temperature of the ring E can be adjusted efficiently. Specifically, even if a large amount of heat is input from the plasma P to the edge ring E during plasma processing, the temperature of the edge ring E can be maintained constant through the temperature control of the ring mounting surface 2011 . . Further, when the set temperature of the edge ring E is changed during plasma processing, the temperature of the edge ring E can be immediately changed to the changed set temperature through the temperature control of the ring mounting surface 2011 . can be done.
  • a DC voltage is applied to the electrode 204 of the electrostatic chuck 201 even during plasma processing, whereby the edge ring E is electrostatically attracted to and held by the electrostatic chuck 201 .
  • the degree of close contact of the edge ring E with the wafer support 101A may be controlled by electrostatic force to control heat removal from the edge ring E by the wafer support 101A.
  • the edge ring E is separated from the ring mounting surface 2011 , and the heat transfer layer DA is vaporized and removed (step S14).
  • the heat transfer layer DA is removed by vaporization. The separation of the edge ring E from the ring mounting surface 2011 , that is, the removal of the edge ring E does not need to be performed each time the wafer W is subjected to plasma processing. Done when damaged or consumed by plasma.
  • the edge ring E is lifted by the lifter 203, As shown in FIG. 16, it is spaced apart from the ring mounting surface 2011 .
  • the heat transfer layer DA is exposed to a reduced pressure atmosphere, specifically an atmosphere with a pressure p11 of less than 0.001 Torr, whereby it is vaporized and removed.
  • the removal of the heat transfer layer DA from the ring mounting surface 2011 includes at least one of exposing the heat transfer layer DA to plasma, heating the heat transfer layer DA, and irradiating the heat transfer layer DA with light. , may be used in place of or in combination with exposing the heat transfer layer DA to a reduced pressure atmosphere.
  • the heat transfer medium generating gas for the heat transfer layer DA may be the same as or different from that for the heat transfer layer D.
  • the edge ring E is carried out (step S15). Specifically, the edge ring E is transferred from the lifter 203 to the transport mechanism 70 and carried out of the plasma processing chamber 100 by the transport mechanism 70 . This completes a series of wafer processing.
  • the heat transfer medium composed of at least one of the liquid medium and the fluid solid medium is placed between the ring mounting surface 2011 and the wafer support 101A. It is supplied between the back surface of the edge ring E and forms a heat transfer layer DA. Therefore, in this embodiment, for the same reason as in the first embodiment, the temperature of the edge ring E can be efficiently adjusted via the ring mounting surface 2011 during plasma processing. Further, clogging of the flow path 209 by the heat transfer medium can be suppressed. Furthermore, since it is not necessary to separately provide a step of removing the heat transfer layer DA, the throughput can be improved.
  • the edge ring E is attracted and held on the ring mounting surface 2011 by the electrostatic force of the electrostatic chuck 201 during plasma processing or the like.
  • the heat transfer layer DA and the lower surface of the edge ring E can be brought into closer contact with each other. Efficiency can be further improved.
  • the wafer W is the object whose temperature is adjusted via the heat transfer layer D formed of the wafer support 101 and the heat transfer medium.
  • both the wafer W and the edge ring E are subject to temperature adjustment.
  • only the edge ring E may be subject to temperature adjustment.
  • the processing module 1A in the examples of FIGS. both of the configurations such as the flow path 115 for forming are provided, the latter configuration may be omitted.
  • the temperature is adjusted for both the wafer W and the edge ring E, and the timing for forming the heat transfer layer D for the wafer W is the timing for forming the heat transfer layer DA for the edge ring E. was different from, but may be the same. By making them the same, the throughput can be improved.
  • the supply form of the heat transfer medium for forming the heat transfer layer DA for the edge ring E is not limited to the above example, and the heat transfer medium for forming the heat transfer layer D for the wafer W described above is Variations similar to the supply form can be applied.
  • the heat transfer medium for forming the heat transfer layer DA for the edge ring E is not limited to the above example, and the heat transfer medium for forming the heat transfer layer D for the wafer W described above may be modified in the same manner. Examples can be applied.
  • the groove 208 for forming the heat transfer layer DA for the edge ring E can be applied to the same specific example as the groove 114 for forming the heat transfer layer DA for the edge ring E described above. .
  • the ring mounting surface may be formed of a porous body in a portion other than the grooves 208 (specifically, for example, the tops of the support columns provided in the grooves 208), similarly to the wafer mounting surface.
  • the entire surface of the ring mounting surface may be made of a porous material.
  • the heat transfer layer DA for the edge ring E may be formed on the entire ring mounting surface 201-1 , similarly to the heat transfer layer D for the wafer W, or may be formed on a part of the ring mounting surface 201-1 .
  • a heat transfer layer may be formed only in the region.
  • the heat transfer layer DA may be formed only on the inner peripheral side of the ring mounting surface 201-1 , or may be formed only on the outer peripheral side of the ring mounting surface 201-1 .
  • the heat transfer layer DA for the edge ring E may have different thicknesses within the ring mounting surface 2011 , similarly to the heat transfer layer D for the wafer W.
  • the heat transfer layer DA may be thinner than on the outer peripheral side, and on the outer peripheral side of the ring mounting surface 201-1 , compared to the inner peripheral side, The heat transfer layer DA may be thin.
  • the thickness of the porous material may be varied for each region of the ring mounting surface 201-1 .
  • the heat transfer layer DA for the edge ring E is formed by mixing a high thermal conductivity conductive medium and a low thermal conductive medium.
  • the mixing ratio of the conductive medium and the low thermal conductivity conductive medium may be different.
  • the density of the grooves 208 may be varied for each region on the ring mounting surface 2011 .
  • the heat transfer layer DA for the edge ring E may be electrically insulating. Moreover, the heat transfer layer DA may have conductivity. Furthermore, the heat transfer layer DA may be configured by wrapping a conductive portion with an electrically insulating portion.
  • the heat transfer layer DA may be formed on the entire ring mounting surface 201-1 , or may be formed only on a part of the ring mounting surface 201-1 .
  • a heat transfer gas such as He gas may be supplied to a region of the ring mounting surface 2011 where the heat transfer layer DA is not formed.
  • the electrostatic chuck 201 attracts and holds the edge ring E by electrostatic force generated by applying a DC voltage to the internal electrode 204 as a fixing portion for holding or fixing the edge ring E to the ring mounting surface 201 1 .
  • the electrically fixed portion is not limited to holding by electrostatic force, and may be held by Johnsen-Rahbek force.
  • the fixing portion is not limited to the one that holds electrically as described above.
  • the fixing part may be a physical fixing part such as a clamp. Note that the fixing portion may be omitted.
  • the edge ring E was stored in the storage module 60 connected to the transfer module 50. good.
  • plasma etching is performed as plasma processing, but the technology of the present disclosure can also be applied to the case of performing processing other than etching (for example, film formation processing) as plasma processing.
  • a cover ring arranged to cover the outer surface of the edge ring is placed on the wafer support of the processing module that performs plasma processing.
  • a heat transfer medium is supplied between the mounting surface of the wafer support table on which the cover ring is mounted and the bottom surface of the cover ring. , a heat transfer layer may be formed.
  • a processing method for plasma processing a substrate comprising: a step of placing the object to be temperature-adjusted on the placement surface of the substrate support part in the processing container configured to be able to be decompressed; A heat transfer medium composed of at least one of a liquid medium and a solid medium having fluidity is applied to the mounting surface of the substrate support portion and the rear surface of the object to be temperature-controlled via the substrate support portion. A step of supplying between and forming a heat transfer layer; a step of subjecting the substrate on the mounting surface on which the heat transfer layer is formed to plasma processing; and separating the object to be temperature-controlled from the mounting surface after plasma processing.
  • the step of forming includes a step of supplying a heat transfer medium generating gas into the substrate supporting portion and cooling it in the substrate supporting portion to change it into the heat transfer medium, according to (1) above. Described processing method. (3) The processing method according to (1) or (2), wherein the forming step includes supplying the heat transfer medium from the outside of the substrate support portion into the substrate support portion. (4) The processing method according to (2) or (3), wherein the step of forming includes a step of supplying the heat transfer medium in the substrate supporting portion to the mounting surface by capillary action. (5) The step of forming includes a step of spreading the heat transfer medium supplied between the mounting surface and the back surface of the object to be temperature-controlled along the mounting surface by capillary action. (1) The processing method according to any one of (4) above.
  • the temperature adjustment target is both the substrate and the edge ring;
  • a plasma processing apparatus a processing container configured to be depressurized; a substrate support provided in the processing container and having a mounting surface on which the substrate is mounted; a control unit;
  • the substrate supporting portion has a flow path for supplying a heat transfer medium composed of at least one of a liquid medium and a fluid solid medium between the mounting surface and the back surface of the substrate.
  • the control unit placing an object to be temperature-controlled on the placement surface; forming a heat transfer layer by supplying the heat transfer medium between the mounting surface and the back surface of the object to be temperature-controlled via the substrate supporting portion; a step of subjecting the substrate on the mounting surface on which the heat transfer layer is formed to plasma processing; After the plasma treatment, separating the object to be temperature-controlled from the mounting surface;
  • a plasma processing apparatus that performs control to perform (17) a gas supply unit that supplies a heat transfer medium generating gas to the flow path of the substrate support;
  • the plasma processing apparatus according to (16) further comprising: a cooling mechanism that cools the heat transfer medium generating gas in the flow path and changes it into the heat transfer medium.
  • the object to be temperature-controlled is at least one of a substrate and an edge ring arranged to surround the substrate mounted on the mounting surface.
  • the plasma processing apparatus according to 1. the temperature adjustment target is both the substrate and the edge ring; The plasma processing apparatus according to (27), wherein the step of forming the substrate is performed at a timing different from the step of forming the edge ring.
  • the temperature adjustment target is both the substrate and the edge ring; The plasma processing apparatus according to (27), wherein the step of forming the substrate is performed at the same timing as the step of forming the edge ring.
  • Reference Signs List 1 1A processing module 100 plasma processing chambers 101, 101A wafer support 104 1 wafer mounting surface 108 channels 115, 209 flow channel 160 controller 201 1 ring mounting surface D, DA heat transfer layer E edge ring W wafer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
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  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Materials Engineering (AREA)
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  • Metallurgy (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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CN202280052184.9A CN117813676A (zh) 2021-08-03 2022-07-27 处理方法和等离子体处理装置
KR1020247005758A KR102943336B1 (ko) 2021-08-03 2022-07-27 처리 방법 및 플라즈마 처리 장치
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US12261027B2 (en) * 2021-09-15 2025-03-25 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
WO2025205180A1 (ja) * 2024-03-27 2025-10-02 東京エレクトロン株式会社 プラズマ処理装置及び処理方法

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JP7850727B2 (ja) * 2021-08-03 2026-04-23 東京エレクトロン株式会社 処理方法及びプラズマ処理装置

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JPH0234595A (ja) * 1988-07-21 1990-02-05 Mitsubishi Electric Corp 気相エピタキシャル成長装置および基板の加熱方法
JPH05109847A (ja) * 1991-10-16 1993-04-30 Hitachi Ltd 発熱体の冷却装置
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JPH0234595A (ja) * 1988-07-21 1990-02-05 Mitsubishi Electric Corp 気相エピタキシャル成長装置および基板の加熱方法
JPH05109847A (ja) * 1991-10-16 1993-04-30 Hitachi Ltd 発熱体の冷却装置
JP2004140056A (ja) * 2002-10-16 2004-05-13 Nok Corp 静電チャック
JP2004311592A (ja) * 2003-04-03 2004-11-04 Renesas Technology Corp 基板洗浄装置および電子デバイスの製造方法

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US12261027B2 (en) * 2021-09-15 2025-03-25 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
WO2025205180A1 (ja) * 2024-03-27 2025-10-02 東京エレクトロン株式会社 プラズマ処理装置及び処理方法

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