WO2022270158A1 - 固体撮像装置及び撮像装置 - Google Patents

固体撮像装置及び撮像装置 Download PDF

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Publication number
WO2022270158A1
WO2022270158A1 PCT/JP2022/019634 JP2022019634W WO2022270158A1 WO 2022270158 A1 WO2022270158 A1 WO 2022270158A1 JP 2022019634 W JP2022019634 W JP 2022019634W WO 2022270158 A1 WO2022270158 A1 WO 2022270158A1
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WO
WIPO (PCT)
Prior art keywords
signal lines
pixel
signal
imaging device
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/019634
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English (en)
French (fr)
Japanese (ja)
Inventor
崇泰 鬼頭
範彦 角谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Nuvoton Technology Corp Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuvoton Technology Corp Japan filed Critical Nuvoton Technology Corp Japan
Priority to JP2023529672A priority Critical patent/JP7828961B2/ja
Priority to CN202280043589.6A priority patent/CN117529932A/zh
Publication of WO2022270158A1 publication Critical patent/WO2022270158A1/ja
Priority to US18/543,731 priority patent/US12587759B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H04N25/69—SSIS comprising testing or correcting structures for circuits other than pixel cells
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Definitions

  • FIG. 8 is a diagram showing a main part of a pixel array section having a third example of load elements according to the first embodiment. This figure shows an example in which redundant signal line loads are aligned by load elements.
  • the redundancy relief circuit of FIG. 5 the number of SW120 connected to the signal lines VL1 and VLn+1 is small. Therefore, the signal line has a smaller load capacitance than the other signal lines VL2 to VLn. Therefore, the dummy SW 121 is connected to VL1 and VLn+1 of the signal lines with few pixel circuits. As a result, the loads on all signal lines become equal, and the pixel readout times become equal. Redundancy relief method can be implemented in the same manner as described in FIG.
  • a plurality of scanning circuits corresponding to the plurality of divided regions of the plurality of pixel circuits are provided, and the plurality of scanning circuits independently control selection of signal lines to be output destinations of the pixel signals.
  • the number of unnecessary signal lines that can be relieved can be increased, and the yield can be further improved.
  • the memory 9 is a non-volatile memory, and by writing during shipping inspection, the data in the memory 9 is read when the power of the image sensor is turned on, and the sensor is activated in the wiring redundancy relief state.
  • FIG. 18 is a flowchart showing imaging processing for imaging using recovery information in the solid-state imaging device according to Embodiment 2.
  • FIG. 18 is a flowchart showing imaging processing for imaging using recovery information in the solid-state imaging device according to Embodiment 2.
  • the signal line VL used by the timing control unit 6 is connected to the current source 3 by SWON.

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
PCT/JP2022/019634 2021-06-22 2022-05-09 固体撮像装置及び撮像装置 Ceased WO2022270158A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023529672A JP7828961B2 (ja) 2021-06-22 2022-05-09 固体撮像装置及び撮像装置
CN202280043589.6A CN117529932A (zh) 2021-06-22 2022-05-09 固体摄像装置及摄像装置
US18/543,731 US12587759B2 (en) 2021-06-22 2023-12-18 Solid-state imaging device and imaging apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-103226 2021-06-22
JP2021103226 2021-06-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/543,731 Continuation US12587759B2 (en) 2021-06-22 2023-12-18 Solid-state imaging device and imaging apparatus

Publications (1)

Publication Number Publication Date
WO2022270158A1 true WO2022270158A1 (ja) 2022-12-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/019634 Ceased WO2022270158A1 (ja) 2021-06-22 2022-05-09 固体撮像装置及び撮像装置

Country Status (4)

Country Link
US (1) US12587759B2 (https=)
JP (1) JP7828961B2 (https=)
CN (1) CN117529932A (https=)
WO (1) WO2022270158A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023072534A (ja) * 2021-11-12 2023-05-24 キヤノン株式会社 光電変換装置及び機器
WO2025083998A1 (ja) * 2023-10-19 2025-04-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像システム、および、固体撮像素子の制御方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025038583A (ja) * 2023-09-07 2025-03-19 キヤノン株式会社 光電変換装置、機器、および信号処理方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017184075A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子および撮像装置
JP2020123795A (ja) * 2019-01-30 2020-08-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
JP2021005794A (ja) * 2019-06-26 2021-01-14 キヤノン株式会社 光電変換装置、撮像システム、移動体、および、信号処理装置

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US7327393B2 (en) * 2002-10-29 2008-02-05 Micron Technology, Inc. CMOS image sensor with variable conversion gain
KR101814661B1 (ko) * 2011-11-29 2018-01-05 삼성전자주식회사 연산 증폭기 회로, 이를 포함하는 이미지 센서, 및 연산 증폭기의 주파수 응답 보상 방법
JP6991816B2 (ja) * 2017-09-29 2022-01-13 キヤノン株式会社 半導体装置および機器
US10171765B1 (en) * 2017-12-22 2019-01-01 Omnivision Technologies, Inc. Bit line boost for fast settling with current source of adjustable size
JP7175703B2 (ja) * 2018-10-17 2022-11-21 キヤノン株式会社 撮像装置及びその制御方法、プログラム、記憶媒体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017184075A (ja) * 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子および撮像装置
JP2020123795A (ja) * 2019-01-30 2020-08-13 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
JP2021005794A (ja) * 2019-06-26 2021-01-14 キヤノン株式会社 光電変換装置、撮像システム、移動体、および、信号処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023072534A (ja) * 2021-11-12 2023-05-24 キヤノン株式会社 光電変換装置及び機器
JP7580362B2 (ja) 2021-11-12 2024-11-11 キヤノン株式会社 光電変換装置及び機器
US12407947B2 (en) 2021-11-12 2025-09-02 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment
WO2025083998A1 (ja) * 2023-10-19 2025-04-24 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像システム、および、固体撮像素子の制御方法

Also Published As

Publication number Publication date
CN117529932A (zh) 2024-02-06
US20240121528A1 (en) 2024-04-11
US12587759B2 (en) 2026-03-24
JPWO2022270158A1 (https=) 2022-12-29
JP7828961B2 (ja) 2026-03-12

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