WO2022264969A1 - 電子部品 - Google Patents

電子部品 Download PDF

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Publication number
WO2022264969A1
WO2022264969A1 PCT/JP2022/023651 JP2022023651W WO2022264969A1 WO 2022264969 A1 WO2022264969 A1 WO 2022264969A1 JP 2022023651 W JP2022023651 W JP 2022023651W WO 2022264969 A1 WO2022264969 A1 WO 2022264969A1
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WO
WIPO (PCT)
Prior art keywords
electronic component
recess
layer
ceramic body
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/023651
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English (en)
French (fr)
Japanese (ja)
Inventor
康次郎 時枝
英幸 鈴木
耕市 山田
美希 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP2023529861A priority Critical patent/JP7556469B2/ja
Priority to CN202280041886.7A priority patent/CN117480581A/zh
Priority to DE112022002164.0T priority patent/DE112022002164T5/de
Publication of WO2022264969A1 publication Critical patent/WO2022264969A1/ja
Priority to US18/523,992 priority patent/US20240096524A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors
    • H01C1/1413—Terminals or electrodes formed on resistive elements having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors
    • H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors
    • H01C1/142—Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors the terminals or tapping points being coated on the resistive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/008—Thermistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/021—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient formed with two or more layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed with two or more layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors

Definitions

  • the present invention relates to an electronic component, and more particularly to an electronic component comprising a ceramic body and external electrodes provided on the surface of the ceramic body.
  • An electronic component includes a body made of a semiconductor ceramic, a thin film layer (protective film) covering the surface of the body, and a pair of external electrodes arranged on a pair of end faces of the body.
  • the external electrode has a first electrode layer (base layer) arranged on the protective film, and a second electrode layer (plating layer) arranged so as to cover the first electrode layer.
  • the base layer uses a metal material that easily causes migration, such as Ag.
  • a metal material that easily causes migration such as Ag.
  • a plating layer for example, Ni plating
  • migration of the underlying layer can be suppressed.
  • the underlying layer is often partially exposed from the plating layer. In this case, part of the underlying layer is connected to the external environment, and moisture brought in from the external environment may cause migration from the underlying layer of one external electrode toward the other external electrode.
  • an object of the present invention is to provide an electronic component capable of suppressing the occurrence of migration or mitigating the degree of migration (this is called an "electronic component excellent in migration resistance").
  • An electronic component comprising a ceramic body and external electrodes provided on the ceramic body,
  • the external electrode includes an underlying layer that continuously covers an end surface of the ceramic body and part of a side surface adjacent to the end surface, and a plating layer that covers the underlying layer,
  • the ceramic body has a recess opening on the side surface, the opening of the recess having a pair of edges, one edge of the opening is located within a covered area of the side surface covered with the base layer; The other edge of the opening is an electronic component, spaced from the covered area.
  • the present invention it is possible to suppress the migration of the underlying layer by providing the concave portion on the side surface of the ceramic body, thereby providing an electronic component with excellent migration resistance.
  • FIG. 1 is a schematic cross-sectional view of a thermistor according to an embodiment.
  • FIG. 2 is an enlarged cross-sectional view of area A in FIG. 1, showing preferred forms of the recesses, the underlying layer and the plating layer.
  • FIG. 3 is an enlarged cross-sectional view of area A in FIG. 1, showing another preferred form of the recesses, the underlying layer and the plating layer.
  • FIG. 4 is an enlarged cross-sectional view of area A in FIG. 1, showing still another preferred embodiment of the recess, the underlayer and the plating layer.
  • FIG. 5 is an enlarged cross-sectional view of area A in FIG. 1, showing still another preferred form of the recess, underlying layer and plating layer.
  • 6A to 6D are enlarged cross-sectional views for explaining the method of manufacturing an electronic component according to an embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view of an electronic component 10 according to an embodiment of the present invention, showing a so-called laminated ceramic type thermistor.
  • the size of the electronic component 10 is not particularly limited, it can be, for example, 0201 size to 2012 size, and a typical example is 0603 size.
  • the electronic component 10 includes a ceramic body 20 and external electrodes 30 provided on the ceramic body 20 .
  • the external electrodes 30 are provided with a pair of external electrodes (a first external electrode 31 and a second external electrode 32) provided at both ends of the ceramic body 20. As shown in FIG.
  • Each external electrode 30 includes an underlying layer 30a (an underlying layer 31a of the first external electrode 31 and an underlying layer 32a of the second external electrode 32 are shown in FIG. 1) and a plated layer 30b covering it (FIG. 1). 1 includes a plated layer 31b of the first external electrode 31 and a plated layer 32b of the second external electrode 32 is shown).
  • the plating layer may have a laminated structure of multiple layers, and in FIG. It has a two-layer structure of the plating layer 30c.
  • the underlayer 30a continuously covers the end surfaces 21 and 22 of the ceramic body 20 and a portion of the side surface 23 adjacent to the end surfaces 21 and 22. As shown in FIG.
  • the ceramic body 20 has recesses 40 (a first recess 41 adjacent to the first external electrode 31 and a second recess 42 adjacent to the second external electrode 32). doing.
  • the recess 40 opens to the side surface 23 of the ceramic body 20 .
  • FIG. 2 to 5 are enlarged cross-sectional views of area A in FIG. 1, showing various aspects of the recess 40, the base layer 30a and the plating layer 30b in this embodiment. 2 to 5, the plated layer is shown as a single layer (only the first plated layer 30b) for ease of explanation. In the case of a plating layer having a plurality of layers, the plating layer 30b illustrated as a single layer is composed of a plurality of plating layers.
  • the recess 40 has an opening 401 on the side surface 23 of the ceramic body 20, and the opening 401 has a pair of edges 401a and 401b.
  • One edge 401a of the opening 401 is located on the end surface 22 side of the ceramic body 20 in FIG. The position of each edge has a relationship with the underlying layer 30a covering the side surface 23 of the ceramic body 20 as described below.
  • the area of the side surface 23 of the ceramic body 20 covered with the underlying layer 30a is defined as a covered region 23R of the side surface 23.
  • One edge 401a of the opening 401 is positioned within the covered region 23R.
  • the other edge 401b of the opening 401 is separated from the covered region 23R.
  • the recess 40 is provided in the side surface 23 of the ceramic body 20, and the underlayer 30a covers one edge 401a of the opening 401 of the recess 40 but does not cover the other edge 401b. 30a.
  • the surface distance between the base layer 32a of one external electrode (second external electrode 32 in FIG. 1) and the other external electrode (first external electrode 31 in FIG. 1) is reduced. (the distance measured along the surface shape (for example, unevenness) of the ceramic body 20) becomes longer. As a result, migration of the underlying layer 32a can be made difficult to occur.
  • one edge 401a of the opening 401 of the recess 40 is positioned inside the covered region 23R relative to the edge 23E of the covered region 23R.
  • the edge 23E of the covered region 23R is located at a position corresponding to the tip 30at of the underlying layer 30a.
  • edge 23E of covering region 23R of side surface 23 and one edge 401a of opening 401 have the same positional relationship.
  • the lower surface 30aL of the base layer 30a is exposed in the recess 40 in the vicinity of the tip 30at of the base layer 30a. Then, the lower surface 30aL of the underlying layer 30a can be covered with the plating layer 30b. That is, the plating layer 30b can widely cover the vicinity of the tip 30at of the underlying layer 30a. Thereby, the effect of suppressing the migration of the underlying layer 30a is obtained.
  • one edge 401a of the opening 401 of the recess 40 may be positioned at the edge 23E of the covering region 23R. That is, in the cross-sectional view of FIG. 3, one edge 401a of the opening 401 may be positioned substantially directly below the tip 30at of the underlying layer 30a.
  • the edge 23E of the covering region 23R of the side surface 23 and one edge 401a of the opening 401 have the same positional relationship.
  • the base layer 30a is formed so that the other edge 401b of the opening 401 of the recess 40 and the base layer 30a of the external electrode 30 are not in contact with each other.
  • the migration of the underlying layer 30a proceeds from one edge 401a of the recess 40 along the inner surface 40f of the recess 40 to the other edge of the opening 401. It reaches up to the part 401b.
  • the surface distance measured along the surface is longer with the recess 40 than it would be without the recess 40 . Since the surface distance affects the occurrence of migration, it is possible to suppress the occurrence of migration of the underlying layer 30a by increasing the surface distance.
  • the plated layer 30b can be formed thickly without being obstructed by the ceramic body 20 in the vicinity of the tip 30at of the underlying layer 30a.
  • an effect of suppressing the migration of the underlying layer 30a can be expected.
  • the plating layer 30b includes an extension 30be that extends beyond the tip 30at of the underlying layer 30a into the recess 40 so as to at least partially contact the inner surface 40f of the recess 40.
  • the extended portion 30be of the plating layer 30b extends inside the recess 40 and reaches the inner surface 40f of the recess 40 .
  • the plated layer 30b including the extending portion 30be similar to that in FIG. 2 is shown.
  • the plating layer 30b includes the extending portions 30be as shown in FIGS. 2 and 3, the path from the external environment to the base layer 30a is blocked by the extending portions 30be of the plating layer 30b.
  • the extended portion 30be extending inside the recess 40 serves as a steric hindrance, and the base layer 30a can be blocked from the external environment, so that the effect of suppressing the migration of the base layer 30a is high.
  • the plating layer 30b includes an extension 30be extending beyond the tip 30at of the base layer 30a to one edge 401a of the opening 401 of the recess 40.
  • the extending portion 30be is not in contact with the inner surface 40f of the recess 40, but protrudes into the recess 40.
  • FIG. 5 shows the plated layer 30b including the extending portion 30be similar to that of FIG.
  • the plated layer 30b includes the extended portion 30be as shown in FIGS. 4 and 5, the thickness of the plated layer 30b in the vicinity of the tip 30at of the base layer 30a can be increased, thereby suppressing the migration of the base layer 30a. obtain.
  • the depth of the concave portion 40 is preferably 0.5 ⁇ m or more and 5.0 ⁇ m or less, which makes it difficult for the electronic component 10 to malfunction due to the concave portion 40 and can improve the effect of suppressing the migration of the underlying layer 30a.
  • the depth of the concave portion 40 is preferably 1.0 ⁇ m or more and 2.5 ⁇ m or less.
  • the ceramic body 20 may include a protective film 50 covering the surface of the ceramic body 20 . If the ceramic body 20 includes a protective film 50, the external electrodes 30 are formed on the protective film 50 (FIGS. 1-5). As can be seen from the manufacturing method described later, the protective film 50 is formed before the recess 40 is formed, so the inner surface 40 f of the recess 40 is not normally covered with the protective film 50 . A small amount of the protective film 50 that was not completely removed when forming the recess 40 may remain on the inner surface 40 f of the recess 40 near the opening 401 of the recess 40 . Even in this case, it is assumed that the inner surface 40f of the recess 40 is not substantially covered with the protective film 50. As shown in FIG.
  • the thickness of the protective film 50 is preferably 30 nm or more and 500 nm or less, more preferably 70 nm or more and 100 nm or less.
  • the protective film 50 is provided between the pair of external electrodes 31 and 32. has an exposed surface 50e exposed from the external electrodes 31 and 32 at .
  • the exposed surface 50e includes a pair of smooth surface regions 50s adjacent to the external electrodes 31 and 32, and a rough surface region 50r positioned between the pair of smooth surface regions 50s and having a rougher surface roughness than the smooth surface regions 50s. It is preferred to include By providing the smooth surface regions 50s in the vicinity of the external electrodes 31 and 32, it is possible to prevent the plated layer 30b from spreading over the surface of the protective film 50 when the plated layer 30b is formed. Further, by providing the rough surface region 50r between the pair of smooth surface regions 50s, the surface distance between the pair of external electrodes 31 and 32 can be lengthened, so the effect of suppressing the migration of the underlying layer 30a is expected. can.
  • the surface of the protective film 50 is roughened except for the vicinity of the external electrodes 31 and 32. to do.
  • Another method of forming the rough surface region 50r is to roughen the surface of the ceramic layer 20c of the ceramic body 20 before forming the protective film 50, and then form the protective film 50.
  • each smooth surface region 50s can be, for example, 20 ⁇ m or more and 100 ⁇ m or less.
  • the ceramic body 20 may have a laminated structure composed of ceramic layers (eg, semiconductor ceramic layers) 20c and internal electrodes 20e.
  • a ceramic material for example, a ceramic semiconductor material for forming the ceramic layer 20c is selected according to the type of the desired electronic component 10 .
  • the ceramic semiconductor material mainly contains a P-type semiconductor with negative resistance-temperature characteristics.
  • P-type semiconductors include ceramics containing manganese oxide as a main component, including nickel oxide, cobalt oxide, alumina, iron oxide, titanium oxide, zirconium oxide, copper oxide, and zinc oxide.
  • ceramic materials such as dielectrics such as BaTiO 3 , CaTiO 3 , SrTiO 3 , CaZrO 3 , (BaSr)TiO 3 , Ba(ZrTi)O 3 and (BiZn)Nb 2 O 7 material is used.
  • the material forming the internal electrode 20e is not particularly limited as long as it is conductive, and examples thereof include Ag, Cu, Pt, Ni, Al, Pd, and Au, with Ag, Cu, and Ni being particularly preferred.
  • Electronic components suitable for applying embodiments of the present invention include chips such as thermistors, varistors and capacitors, including for example positive (or positive temperature coefficient, PTC) thermistors and negative (or negative temperature coefficient, NTC) thermistors.
  • chips such as thermistors, varistors and capacitors, including for example positive (or positive temperature coefficient, PTC) thermistors and negative (or negative temperature coefficient, NTC) thermistors.
  • PTC positive temperature coefficient
  • NTC negative temperature coefficient
  • a method for forming the recesses 40 there are mainly a method of dissolving with a plating solution during the plating process (chemical processing), and a method of laser processing before the plating process.
  • chemical processing There are two methods of cutting (mechanical processing).
  • Chemical processing is preferable in that the process can be simplified because the recesses 40 can be formed simultaneously with the formation of the plating layer.
  • chemical processing requires that the material forming the ceramic layer dissolves in the plating solution.
  • a thermistor is an example of an electronic component having a chemically processable ceramic layer (semiconductor ceramic layer) 20c.
  • Varistors are examples of electronic parts that cannot be chemically processed. In the case of varistors, mechanical processing is performed instead of chemical processing. Mechanical processing is preferable in that the recesses 40 can be formed in any electronic component because it is not necessary to consider the solubility in the plating solution. When forming the recess 40 in the side surface 23 of the ceramic body 20 by mechanical processing, the recess 40 is formed before the plating process.
  • Ceramic raw materials such as BaCO 3 , TiO 2 , PbO, SrCO 3 and CaCO 3 and semiconducting agents such as Er 2 O 3 are weighed in predetermined amounts as raw materials for the ceramic body.
  • the semiconductor agent is selected from the group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er , Tm, Yb and Lu instead of Er2O3 . At least one rare earth element oxide or the like may also be used.
  • a property improving agent such as Mn 2 O 3 and a sintering aid such as SiO 2 may also be used as raw materials for the ceramic body.
  • the weighed raw materials are put into a ball mill together with grinding media such as partially stabilized zirconia (PSZ) (hereinafter also referred to as PSZ balls) and pure water, and wet-mixed and ground.
  • PSZ partially stabilized zirconia
  • the obtained mixture is calcined at a predetermined temperature (for example, 1000 to 1200° C.) to obtain a calcined powder.
  • An organic binder is added to the obtained calcined powder, which is mixed in a wet process to form a slurry, which is then formed into a ceramic green sheet by using a doctor blade method or the like.
  • a conductive paste for internal electrodes is applied to the surfaces of the ceramic green sheets to form internal electrode patterns.
  • the conductive paste for internal electrodes can be prepared, for example, by dispersing Ni metal powder and an organic binder in an organic solvent.
  • the internal electrode paste may be applied by, for example, screen printing. A predetermined number of ceramic green sheets having internal electrode patterns formed thereon are stacked, and then the ceramic green sheets having no internal electrode patterns formed thereon are sandwiched from the top and bottom and pressed together to form a laminate.
  • FIG. 6(a) shows only the ceramic layer 20c of the obtained laminate.
  • a protective film 50 is formed over the entire surface of the laminate (FIG. 6(b)). At this time, the protective film 50 is formed so as to cover not only the ceramic layer 20c but also the internal electrodes 20e.
  • the protective film 50 can be made of an insulating material such as glass.
  • the protective film 50 made of glass can be formed by a thin film forming method using a solution. Sol-gel methods, MOD (metal organic compound decomposition) methods, CSD (chemical solution deposition) methods, and the like can be used as methods for forming thin films. After forming the raw material coating film of the protective film 50 on the surface of the laminate, it is subjected to heat treatment to obtain the glass protective film 50 derived from the coating film.
  • the heat treatment temperature and time may be, for example, 300° C. or higher and 1100° C. or lower, for example, 10 to 60 minutes.
  • the temperature of the heat treatment is particularly preferably 400° C. or higher and 1000° C. or lower.
  • base layers 31a and 32a are formed so as to cover part of the side surface 23 from the end face of the ceramic body 20.
  • the underlying layer 30a can be made of Ag, AgPd, Cu, or the like.
  • the underlying layer 30a is formed by various thin film formation methods, various printing methods, dipping methods, or the like.
  • the conductive paste is baked after applying the conductive paste to both end surfaces of the ceramic body.
  • the conductive paste contains an organic solvent, metal particles and glass.
  • the baking temperature is, for example, 840°C. When the baking is performed, the internal electrode 20e penetrates the protective film 50 and conducts with the base layer 30a (fire-through).
  • the protective film 50 preferably has a thickness of 30 nm or more and 500 nm or less. 30a can be reliably conducted.
  • alteration range 50x the area of the protective film 50 in contact with the underlying layer 30a and the area near the tip 30at of the underlying layer 30a (Fig. 6 ( c), these ranges are collectively referred to as "alteration range 50x") are altered.
  • the strength of the protective film 50 within the alteration range 50x is lower than that of the protective film 50 at other positions.
  • the plating layer 30b (first plating layers 31b and 32b in FIG. 1) is formed to cover the surface of the underlying layer 30a.
  • the plating layer 30b can be formed, for example, by electroplating one or more metal materials selected from Ni, Sn, Pd, and Au.
  • the plating layer 30b is being formed, the area of the protective film 50 that is not covered with the underlying layer 30a is in contact with the plating solution.
  • the plating conditions type of plating solution, concentration, temperature, etc.
  • the protective film 50 out of the protective film 50 in contact with the plating solution will deteriorate.
  • the portion where the strength is weakened that is, the vicinity of the tip 30at of the base layer 30a
  • the exposed ceramic layer 20c is dissolved with a plating solution to form the recesses 40 .
  • the range in which the protective film 50 is removed expands.
  • the protective film 50 is removed to the lower side of the tip 30at of the base layer 30a.
  • the range of the opening 401 of the concave portion 40 is also widened accordingly.
  • the plated layer 30b is formed beyond the tip 30at of the underlying layer 30a, as shown in FIGS.
  • the portion beyond the tip 30at has a different form depending on the plating conditions (especially plating time). For example, if the plating time is long, the extended portion 30be grows so large that it contacts the inner surface 40f of the recess 40, as shown in FIGS. On the other hand, if the plating time is not so long, the extended portion 30be bulges into the recess 40 as shown in FIGS. 4 and 5, but does not come into contact with the inner surface 40f. 2 and 3 is highly effective in suppressing the migration of the underlying layer 30a, it increases the plating time, thus increasing the manufacturing cost. Therefore, it is desirable to decide whether to use the extended portion 30be as shown in FIGS. 2 and 3 or the extended portion 30be as shown in FIGS.
  • the plating layer (first plating layer) 30b and the second plating layer 30c can be formed by a known plating method, for example, barrel plating using balls can be used.
  • barrel plating a ball contacts the exposed surface 50e of the protective film 50 shown in FIG. 1, and the protective film 50 can be roughened.
  • the surface of the protective film 50 in the vicinity of the external electrode 30 cannot be contacted by the ball due to the external electrode 30 being an obstacle. can).
  • the plating layer may have a two-layer structure.
  • the second plating layers 31c and 32c are formed so as to cover the first plating layers 31b and 32b.
  • the first plating layers 31b and 32b can be formed, for example, by electroplating at least one of Ni and Cu.
  • the second plating layers 31c and 32c can be formed by electroplating Sn, for example.
  • the modified example is different from the above-described manufacturing method according to the present embodiment in that the recesses 40 are formed by mechanical processing.
  • the ceramic body 20 is formed in the same manner as in the manufacturing method according to this embodiment.
  • recesses 40 are formed in the side surfaces 23 of the ceramic body 20 by mechanical processing such as laser processing.
  • the underlying layer 30a and the plating layer 31b (and the second plating layer 31c) are sequentially formed in the same manner as in the manufacturing method according to the present embodiment.
  • the electronic component 10 having the recesses 40 can be manufactured even when the ceramic layer 20c included in the ceramic body 20 is made of a material that does not dissolve in the plating solution.
  • An electronic component (thermistor) having a structure as shown in FIG. 1 was produced by the method for manufacturing the electronic component 10 according to the embodiment.
  • the materials, dimensions, etc. of the thermistor were as follows.
  • Electronic component laminated ceramic type thermistor
  • Electronic component size 0603 size
  • prismatic type Ceramic layer material Ceramics containing manganese oxide as a main component, including nickel oxide, cobalt oxide, and iron oxide.
  • ⁇ Material of base layer Ag
  • ⁇ Plating film material 1st plating layer Ni, 2nd plating layer Sn ⁇ Number of layers of plating film: 2 layers
  • ⁇ Material of protective film Amorphous glass with a thickness of 100 nm
  • the manufactured thermistor had a concave portion 40, an underlying layer 30a, and a plated layer 30b (two-layer structure consisting of a first plated layer and a second plated layer) as shown in FIG.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thermistors And Varistors (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
PCT/JP2022/023651 2021-06-15 2022-06-13 電子部品 Ceased WO2022264969A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2023529861A JP7556469B2 (ja) 2021-06-15 2022-06-13 電子部品
CN202280041886.7A CN117480581A (zh) 2021-06-15 2022-06-13 电子部件
DE112022002164.0T DE112022002164T5 (de) 2021-06-15 2022-06-13 Elektronikkomponente
US18/523,992 US20240096524A1 (en) 2021-06-15 2023-11-30 Electronic component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021099625 2021-06-15
JP2021-099625 2021-06-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
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JP2013236045A (ja) * 2012-05-03 2013-11-21 Samsung Electro-Mechanics Co Ltd 積層セラミック電子部品及びその製造方法
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