WO2022262933A1 - Qubit-element - Google Patents
Qubit-element Download PDFInfo
- Publication number
- WO2022262933A1 WO2022262933A1 PCT/EP2021/065942 EP2021065942W WO2022262933A1 WO 2022262933 A1 WO2022262933 A1 WO 2022262933A1 EP 2021065942 W EP2021065942 W EP 2021065942W WO 2022262933 A1 WO2022262933 A1 WO 2022262933A1
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- WO
- WIPO (PCT)
- Prior art keywords
- quantum well
- well structure
- backgate
- qubit
- layer
- Prior art date
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 126
- 239000002800 charge carrier Substances 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 39
- 239000010703 silicon Substances 0.000 claims description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 238000009413 insulation Methods 0.000 claims description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 36
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 15
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66977—Quantum effect devices, e.g. using quantum reflection, diffraction or interference effects, i.e. Bragg- or Aharonov-Bohm effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Definitions
- the invention relates to a qubit element and a use of the qubit element and a production method for the qubit element.
- the spin of a charge carrier can be used as qubits. However, this requires access to the charge carrier in such a way that its spin can be determined and influenced. For this purpose it is known to localize charge carriers in quantum points. However, semiconductor structures known for this do not allow satisfactory control over the spin.
- the object of the present invention is, based on the described prior art, to present a qubit element with which the spin of a charge carrier can be controlled particularly well. In addition, a corresponding use and a manufacturing process are to be presented.
- a qubit element which comprises:
- an electrode arrangement which is arranged at a distance from the quantum well structure in the first direction and which is configured to restrict movement of a charge carrier in the quantum well in and against a second direction and in and against a third direction in order to form a quantum dot , where the first direction, the second direction and the third direction are in pairs perpendicular to each other,
- ⁇ a backgate, which is arranged spaced apart from the quantum well structure in the opposite direction to the first direction.
- qubit is used here - as is common practice - for the abstract concept of a quantum mechanical two-state system which can be used for quantum computing.
- a qubit element here - to distinguish it from the abstract concept - is to be understood as a device with which a qubit can be realized.
- the term “qubit element” the term “device for realizing a qubit” can therefore also be used.
- the qubit element is a semiconductor structure.
- the term “semiconductor structure for realizing a qubit” can also be used in this case.
- the qubit can be part of a device which has a multiplicity of qubit elements designed as described. Such a device is also part of the invention.
- a quantum dot can be formed in the qubit element.
- the movement of a charge carrier in the quantum dot is restricted in all directions to such an extent that the charge carrier can only assume discrete energy states.
- a quantum dot can be said to be zero-dimensional.
- the charge carrier can be an electron or a hole.
- a charge carrier in a quantum dot can be used to implement a qubit.
- the spin of a charge carrier in a quantum dot can be used to create a qubit.
- the qubit element is described using a coordinate system having a first direction, a second direction and a third direction, with the three directions being orthogonal in pairs.
- the qubit element has a quantum well structure.
- a quantum well is formed in the quantum well structure.
- a quantum well is a potential curve that restricts the movement of a charge carrier in one direction.
- the quantum well of the quantum well structure is formed along the first direction. This means that the movement of a charge carrier in the quantum well in and against the first direction is confined to the quantum well.
- the potential that forms the quantum well can be the valence band or the conduction band of a semiconductor layer structure.
- the movement of a charge carrier in and against the first direction can be restricted by the quantum well structure.
- the movement of the charge carrier in and against the other two directions can be limited by electric fields that can be generated by applying electric voltages to electrodes (which can also be referred to as "gates").
- the qubit element has an electrode arrangement for this purpose This is designed in such a way that the movement of the charge carrier in the quantum well can be restricted in and against the second and third directions.
- the electrode array is spaced from the quantum well structure in the first direction. If the first direction points from bottom to top, the electrode arrangement is above the quantum well structure.
- the electrode arrangement is preferably electrically insulated from the quantum well structure and in this respect is not in direct contact with the quantum well structure.
- the electrode array is spaced from the quantum well structure by an oxide layer and/or a cap layer.
- the oxide layer is used for electrical insulation, the top layer for adhesion of the electrode arrangement on the oxide layer.
- the electrode arrangement is preferably at a distance of 10 to 200 nm [nanometers] from the edge of the quantum well structure. This refers to the edge of the quantum well structure closest to the electrode array.
- the qubit element also has a backgate, which is arranged at a distance from the quantum well structure in the opposite direction to the first direction. If the first direction points from bottom to top, the backgate is arranged below the quantum well structure.
- the backgate is preferably electrically isolated from the quantum well structure.
- the backgate can be designed as a global backgate for a large number of qubit elements.
- the charge carriers in the quantum dot can be influenced via the backgate.
- the Fermi energy can be shifted by the backgate, which can influence the population of the quantum dot.
- the occupation number of the quantum dot can be adjusted independently of an electric field between the backgate and the electrode arrangement.
- the combination of backgate and electrode arrangement results in a particularly high degree of flexibility in the design of the qubit element, especially with regard to electric field gradients in the area of the quantum dot.
- the backgate can be designed in one piece or composed of several parts. The parts of the backgate can adjoin one another or be spaced apart from one another. In the latter case one can also speak of a structured backgate.
- the backgate is arranged at a distance from the quantum well structure in the opposite direction to the first direction, while the electrode arrangement is arranged at a distance from the quantum well structure in the first direction.
- the back gate and the electrode arrangement are thus net angeord on different sides of the quantum well structure. This results in a comparatively small distance between the backgate and the quantum dot. This applies in particular in comparison to an embodiment in which the electrode arrangement is arranged between a quantum well structure and a global top gate provided instead of the back gate.
- valley splitting also referred to as "valley splitting”
- the valley splitting is particularly large and homogeneous. This is advantageous because it can prevent the coherence properties of the qubit from being affected by scattering in the Valley States will be destroyed.
- qubits for example in silicon-germanium heterostructures, show only a small and inhomogeneous valley splitting.
- a particularly large splitting of the valley states by a back gate can therefore ensure particularly reliable operation of a quantum computer with the qubit element described.
- the valley split is larger than the thermal energy of the system. This is how the qubits can be controlled.
- Valley splitting limits the operating temperature of a quantum computer formed with qubit elements formed as described. Higher operating temperatures are therefore possible thanks to the backgate.
- a larger number of qubits can be used, enabling a more powerful quantum computer.
- the Valley split can be controlled by the backgate.
- the backgate is preferably at a distance of 30 to 200 nm [nanometers] from the edge of the quantum well structure. This refers to the edge of the quantum well structure closest to the backgate.
- the qubit element further comprises a ground layer formed of strained silicon, which is arranged between the quantum well structure and the back gate.
- the quantum well structure could be grown directly on a wafer, in particular a silicon wafer. Irrespective of the lattice structure of the quantum well structure, lattice defects can occur. This applies in particular when the quantum well structure does not have silicon with the naturally occurring lattice constant on its side facing the wafer. When the first direction is from bottom to top, it refers to the bottom of the quantum well structure.
- the advantages of the qubit element described can be used particularly well in the case that the quantum well structure has a lattice constant on its surface pointing in the opposite direction to the first direction, which deviates from the lattice constant naturally present in silicon.
- the qubit element described can be produced in a particularly simple manner thanks to the base layer. This applies in particular to a case in which the quantum pot structure is grown directly on a silicon wafer or on a transition layer.
- the base layer preferably adjoins the quantum well structure in the opposite direction to the first direction. If the first direction points from bottom to top, the base layer thus borders the quantum well structure at the bottom.
- the base layer is formed from strained silicon. As is generally the case, this means that the silicon has a lattice constant that differs from that which occurs naturally.
- the naturally occurring lattice constant of silicon is around 0.5 nm [nanometer].
- Strained silicon is silicon whose lattice constant deviates by at least 0.2%, in particular at least 1%, from the naturally occurring value.
- the expression "the base layer is formed from silicon which has a lattice constant that deviates by at least 0.2%, in particular at least 1%, from the naturally occurring lattice constant of silicon” can also be used ".
- the base layer is at most 20 nm [nanometers] thick.
- the thickness of the base layer is the extent of the base layer in the first direction.
- the thickness of the base layer is preferably between 1 and 10 nm [nanometers].
- the base layer of strained silicon can be obtained with the method also known as the "Jülich process", which is described in US Pat. No. 6,464,780.
- the content of this document is fully incorporated by reference as belonging to the invention Si substrate, an adjacent SiGe layer and an Si top layer adjacent to the SiGe layer.
- the Si top layer becomes the base layer in the course of the process, i.e. has the thickness of the base layer. This is preferably at most 20 nm [nanometer], in particular between 1 and 10 nm.
- the SiGe is strained.
- Helium is then introduced into the layered structure and the layered structure is heated for annealing. This relaxes the SiGe and gives it its natural lattice constant.
- the silicon in the Si top layer to strained silicon around will.
- the described auxiliary layer structure is placed "upside down" on the wafer, in particular on the insulation layer by wafer bonding.
- the SiGe layer and the Si substrate of the layer structure can be removed by selective etching. Only the base layer remains on the Wafer, in particular on the insulation layer
- the quantum well structure can then be grown on the base layer, for example by means of Molecular Beam Epitaxy (MBE).
- MBE Molecular Beam Epitaxy
- the base layer preferably has the lattice constant exhibited by the quantum well structure at the interface between the base layer and the quantum well structure.
- the base layer therefore goes into the quantum well structure without changing the lattice constant.
- the back gate can be arranged at a distance from the quantum well structure in the opposite direction to the first direction.
- the layer of the quantum well structure facing the backgate is made of silicon-germanium, for example, a transition layer made of silicon-germanium with a gradually decreasing proportion of germanium could also be provided between the quantum well structure and a silicon wafer.
- the transition layer would have to have a considerable thickness, for example 1 mm [micrometer].
- a much smaller distance between the backgate and the quantum dot can be realized thanks to the base layer.
- the qubit element further comprises an insulating layer of silicon dioxide, which abuts the base layer on an opposite side of the base layer from the quantum well structure.
- the silicon dioxide layer is now part of the qubit element.
- the silicon dioxide layer is referred to here as the insulating layer because the silicon dioxide is used for electrical insulation between the base layer and another layer adjoining the insulating layer. can be turned.
- the insulating layer can be amorphous.
- the insulating layer preferably has a thickness in the range of 5 and 30 nm [nanometers]. The thickness of the insulation layer is the extent of the insulation layer in the first direction.
- the qubit element further comprises a wafer with a recess, the backgate being arranged within the recess.
- the wafer is preferably a silicon wafer.
- the silicon wafer can be etched locally so that the backgate can be inserted into a recess in the wafer. In this way, the backgate can be brought particularly close to the quantum dot.
- the qubit element has an insulating layer made of silicon dioxide, which abuts against the base layer on a side of the base layer which is opposite to the quantum well structure.
- the silicon dioxide also serves as an etch stop for the etching of the wafer. In this way, the material of the wafer can be completely removed in the recess. The recess thus extends along the first direction over the entire extent of the wafer.
- the backgate can therefore be arranged directly adjacent to the insulation layer.
- the quantum well structure has three layers consecutive in the first direction, of which the middle layer is formed from strained silicon and of which the two remaining layers are formed from silicon and germanium, respectively.
- the middle layer of strained silicon has a lattice constant that deviates from the natural lattice constant of silicon.
- the silicon of the middle layers is strained.
- the material of the middle layer can in particular be silicon with a lattice constant which corresponds to the lattice constant of the material of the other layers. This term can be used in place of the term "strained silicon" for the middle layer material.
- the two remaining layers are preferably formed from silicon-germanium or germanium-silicon.
- a semiconductor material made of silicon and germanium is referred to as silicon-germanium, which has more silicon than germanium.
- germanium-silicon is a semiconductor material that contains more germanium than silicon.
- the material of the remaining layers of the quantum well structure preferably has a silicon content in the range of 60 and 80% or in the range of 20 and 40%.
- the material is Si 0.7 Ge 0.3 or Geo.7Sio.3 .
- the conduction band forms a quantum well. This can limit the movement of electrons as charge carriers. The spin of an electron can then be used to realize a qubit. Due to the layer sequence germanium-silicon, silicon, germanium-silicon, the valence band and the conduction band form a quantum well. This can restrict the movement of holes and/or electrons as charge carriers. The spin of an electron or hole can then be used to realize a qubit.
- the middle layer preferably has a thickness in the range of 3 to 12 nm [nanometer].
- the remaining layers of the quantum well structure preferably have a thickness in the range of 30 and 70 nm [nanometers]. The thickness of a layer is in each case the expansion of this layer in the first direction.
- the qubit element further comprises a magnet which is arranged at a distance from the quantum well structure in the opposite direction to the first direction.
- a gradient in the magnetic field of the magnet causes spin-orbit coupling of the states of the charge carrier in the quantum dot and the energy splitting of the two qubit states is individualized for each qubit in the vicinity of the magnet. This is advantageous for quantum computing.
- one magnet can be used for multiple qubit elements.
- the magnet is arranged at a distance from the quantum well structure in the opposite direction to the first direction.
- the magnet is preferably arranged between the insulating layer and the backgate.
- the magnet preferably touches the insulating layer and/or the backgate.
- the magnet is arranged on the opposite side of the quantum well structure from the electrode arrangement. This places the magnet much closer to the quantum point than would be the case with a magnet placed on the same side as the electrode array. This is advantageous because the closer the magnet is to the quantum dot, the greater the influence of a magnetic field generated by a magnet on the quantum dot.
- the gradient of the magnetic field is decisive for the spin-orbit coupling of the charge carriers in the quantum dot. This is all the more pronounced the closer the magnet is to the quantum dot.
- the arrangement of the magnet on the side of the quantum well structure opposite the electrode arrangement is possible in particular because of the base layer.
- the layer of the quantum well structure facing the magnet is made of silicon-germanium, for example, a transitional layer made of silicon-germanium with a gradually decreasing proportion of germanium could also be provided between the quantum well structure and a silicon wafer.
- the transition layer would have to have a considerable thickness, for example 1 mm [micrometer].
- a significantly smaller distance between the magnet and the quantum dot can be realized through the base layer and the preferably provided insulating layer made of silicon dioxide.
- the magnet is preferably electrically isolated from the base layer, preferably by the insulating layer. Also, it is preferred that the backgate is electrically isolated from the magnet. Alternatively, it is preferred that the magnet is electrically conductively connected to the backgate. In this case the magnet touches the backgate.
- the embodiments described above can be implemented in addition to or as an alternative to one another. This results in the following three possibilities.
- the qubit element may include a magnet touching the non-magnetized back gate.
- the qubit element may have an at least partially magnetized backgate without a magnet touching the backgate.
- the qubit element may include a magnet contacting the at least partially magnetized backgate.
- the back gate is at least partially magnetized.
- the magnet described above can be regarded as a magnetized part of the backgate.
- the magnetized part of the backgate can be arranged in particular between the insulation layer and the remaining part of the backgate.
- the magnetized part of the backgate is directly adjacent to the remaining part of the backgate and is insofar electrically conductively connected to the remaining part of the backgate.
- the magnetized part of the backgate can therefore be used on the one hand to generate the magnetic field gradient for the spin-orbit coupling.
- the magnetized part of the backgate can contribute to the generation of an electric field.
- a use of a qubit element designed as described is presented as a further aspect of the invention, with electrical voltages being applied to the electrode arrangement in such a way that a quantum dot is formed in the quantum well of the quantum well structure.
- the qubit element is preferably used at a temperature ranging from 0.1 to 4K. This is particularly possible in a cryostat.
- a spin of a charge carrier is used in the quantum dot to realize a qubit.
- a method for producing a qubit element comprises: a) providing a wafer and an insulating layer made of silicon dioxide on a surface of the wafer, b1) growing a quantum well structure directly or indirectly on the insulating layer, with a quantum well being formed within the quantum well structure along a first direction or b2) local etching of the wafer on a side of the wafer opposite the insulating layer, so that a recess is formed in the wafer, c) arranging a backgate within the recess etched according to step b).
- the described advantages and features of the qubit element and the use are applicable and transferable to the method and vice versa.
- the qubit element described can preferably be generated using the method described.
- the method described is preferably designed to produce the qubit element described.
- Steps b1) and b2) can be carried out in any order.
- Step b1) preferably takes place before step b2).
- step a) a wafer and an insulating layer made of silicon dioxide are provided on a surface of the wafer.
- providing means that each wafer provided with the insulation layer is obtained from a supplier or that the insulation layer is produced as part of the method.
- step b1) the quantum well structure is grown on the insulating layer. This takes place directly or indirectly on the insulating layer. The latter is particularly the case in the preferred embodiment, in which the base layer described is provided on the insulating layer and the quantum well structure is grown on the base layer.
- step b2) the wafer is etched locally. This is done from the back of the wafer insofar as the etching begins on the side of the wafer opposite the insulating layer. The material of the wafer is preferably removed in the area of the cutout to such an extent that the cutout reaches as far as the insulation layer. This is easily possible because the silicon dioxide as etch stop. In a device with a plurality of qubit elements, the recess thus etched can be used for a plurality of qubit elements.
- step c) the backgate is inserted into the recess. If a magnet is additionally provided, this is preferably also inserted into the recess. This is preferably done in such a way that the magnet and/or the backgate adjoin the insulating layer. In a device with a plurality of qubit elements, a backgate and/or a magnet can be used globally for a plurality of qubit elements.
- Fig. 2 The band structure of a part of the qubit element from Fig. 1.
- the qubit element 1 shows a qubit element 1. This is described using a coordinate system consisting of a first direction x, a second direction y and a third direction z, pairs of which are perpendicular to one another.
- the qubit element 1 comprises a quantum well structure 2, within which a quantum well 3 is formed along the first direction x. This can be seen in FIG.
- the qubit element 1 further comprises an electrode arrangement 4.
- the electrode arrangement 4 is spaced apart from the quantum well structure 2 by a covering layer 15 and an oxide layer 16.
- FIG. The electrode arrangement 4 is set up to restrict the movement of charge carriers in the quantum well 3 in and against the second direction y and in and against the third direction z in order to form a quantum dot 5 . Two such quantum dots 5 are drawn in.
- the quantum dots 5 can be formed by applying electrical voltages to the electrode arrangement 4 .
- the spins of carriers in the quantum dots 5 can each be used as a qubit.
- the spins of charge carriers in the two quantum dots 5 shown can be used in particular as qubits that are coupled to one another.
- the qubit element 1 also includes a base layer 6 formed from strained silicon, which adjoins the quantum well structure 2 counter to the first direction x.
- the qubit element 1 comprises an insulation layer 7 made of silicon dioxide, which is in contact with the base layer 6 on a side of the base layer 6 opposite the quantum well structure 2 .
- the quantum well structure 2 has three successive layers 8,9,10 in the first direction x, of which a second layer 9 is formed of strained silicon, and of which a first layer 8 and a third layer 10 are each made of silicon-germanium or germanium-silicon are formed.
- the qubit element 1 also includes a magnet 12 and a backgate 14, which are arranged at a distance from the quantum well structure 2 counter to the first direction x.
- the magnet 12 and--if not covered by the magnet 12--also the backgate 14 are on the insulation layer 7.
- the backgate 14 may be electrically isolated from the magnet 12 (by insulation between the magnet 12 and the backgate 14, which is not provided) or be electrically connected to the magnet 12. In the latter case, the backgate 14 can be considered to be partially magnetized.
- the magnet 12 forms the magnetized part of the backgate 14. It also includes the qubit element
- FIG. 1 I a wafer 11 with a recess 13.
- the magnet 12 and the backgate 14 are arranged within the recess 13.
- the qubit element 1 can be manufactured in that first the wafer
- I I is provided, which has the insulation layer 7 and a base layer 6 of strained silicon adjoining the insulation layer 7 on one surface.
- the quantum well structure 2 adjoining the base layer 6 can then be produced.
- the wafer 11 can be etched locally on a side of the wafer 11 opposite the insulation layer 7 (that is to say at the bottom in FIG. 1) in such a way that the recess 13 is formed in the wafer 11 .
- the insulation layer 7 serves as an etching stop.
- the magnet 12 and the backgate 14 can then be arranged inside the recess 13 .
- FIG. 2 shows the band structure of part of the qubit element 1 from FIG. 1.
- the quantum well 3 can be seen on the conduction band E c and valence band E v shown. reference list
- insulation layer 8 first layer of quantum well structure
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Abstract
Description
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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EP21733935.7A EP4356431A1 (de) | 2021-06-14 | 2021-06-14 | Qubit-element |
PCT/EP2021/065942 WO2022262933A1 (de) | 2021-06-14 | 2021-06-14 | Qubit-element |
CN202180099383.0A CN117480615A (zh) | 2021-06-14 | 2021-06-14 | 量子比特元件 |
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PCT/EP2021/065942 WO2022262933A1 (de) | 2021-06-14 | 2021-06-14 | Qubit-element |
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CN (1) | CN117480615A (de) |
WO (1) | WO2022262933A1 (de) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002073527A2 (en) * | 2001-03-09 | 2002-09-19 | Wisconsin Alumni Research Foundation | Solid-state quantum dot devices and quantum computing using nanostructured logic dates |
US6464780B1 (en) | 1998-01-27 | 2002-10-15 | Forschungszentrum Julich Gmbh | Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers |
US20080142787A1 (en) * | 2006-07-18 | 2008-06-19 | Daniel Loss | Fermionic bell-state analyzer and quantum computer using same |
US20130087766A1 (en) * | 2011-10-07 | 2013-04-11 | The Regents Of The University Of California | Scalable quantum computer architecture with coupled donor-quantum dot qubits |
US20150279981A1 (en) * | 2013-03-14 | 2015-10-01 | Wisconsin Alumni Research Foundation | Direct tunnel barrier control gates in a two-dimensional electronic system |
WO2018057013A1 (en) * | 2016-09-24 | 2018-03-29 | Intel Corporation | Quantum well stack structures for quantum dot devices |
US10843924B1 (en) * | 2018-06-20 | 2020-11-24 | equal1.labs Inc. | Quantum shift register structures |
-
2021
- 2021-06-14 CN CN202180099383.0A patent/CN117480615A/zh active Pending
- 2021-06-14 EP EP21733935.7A patent/EP4356431A1/de active Pending
- 2021-06-14 WO PCT/EP2021/065942 patent/WO2022262933A1/de active Application Filing
Patent Citations (7)
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US6464780B1 (en) | 1998-01-27 | 2002-10-15 | Forschungszentrum Julich Gmbh | Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers |
WO2002073527A2 (en) * | 2001-03-09 | 2002-09-19 | Wisconsin Alumni Research Foundation | Solid-state quantum dot devices and quantum computing using nanostructured logic dates |
US20080142787A1 (en) * | 2006-07-18 | 2008-06-19 | Daniel Loss | Fermionic bell-state analyzer and quantum computer using same |
US20130087766A1 (en) * | 2011-10-07 | 2013-04-11 | The Regents Of The University Of California | Scalable quantum computer architecture with coupled donor-quantum dot qubits |
US20150279981A1 (en) * | 2013-03-14 | 2015-10-01 | Wisconsin Alumni Research Foundation | Direct tunnel barrier control gates in a two-dimensional electronic system |
WO2018057013A1 (en) * | 2016-09-24 | 2018-03-29 | Intel Corporation | Quantum well stack structures for quantum dot devices |
US10843924B1 (en) * | 2018-06-20 | 2020-11-24 | equal1.labs Inc. | Quantum shift register structures |
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CN117480615A (zh) | 2024-01-30 |
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