WO2022259905A1 - Pâte conductrice, produit durci et dispositif semi-conducteur - Google Patents

Pâte conductrice, produit durci et dispositif semi-conducteur Download PDF

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Publication number
WO2022259905A1
WO2022259905A1 PCT/JP2022/022051 JP2022022051W WO2022259905A1 WO 2022259905 A1 WO2022259905 A1 WO 2022259905A1 JP 2022022051 W JP2022022051 W JP 2022022051W WO 2022259905 A1 WO2022259905 A1 WO 2022259905A1
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WO
WIPO (PCT)
Prior art keywords
meth
conductive paste
acrylate
mass
less
Prior art date
Application number
PCT/JP2022/022051
Other languages
English (en)
Japanese (ja)
Inventor
慶一 日下
Original Assignee
住友ベークライト株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友ベークライト株式会社 filed Critical 住友ベークライト株式会社
Priority to JP2023527626A priority Critical patent/JP7464198B2/ja
Priority to CN202280040924.7A priority patent/CN117461120A/zh
Publication of WO2022259905A1 publication Critical patent/WO2022259905A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers

Definitions

  • thermosetting resin composition containing metal particles A technique for manufacturing a semiconductor device using a thermosetting resin composition containing metal particles is known, with the intention of increasing the heat dissipation of the semiconductor device.
  • metal particles having a higher thermal conductivity than the resin in the thermosetting resin composition By including metal particles having a higher thermal conductivity than the resin in the thermosetting resin composition, the thermal conductivity of the cured product can be increased.
  • Patent Documents 1 and 2 As a specific example of application to a semiconductor device, a technique of bonding/joining a semiconductor element and a substrate (supporting member) using a composition containing metal particles is known, as in Patent Documents 1 and 2 below. there is
  • Patent Document 1 discloses an adhesive composition containing silver particles, a thermosetting resin such as an acrylic resin, and a dispersion medium. The document describes that the adhesive composition has sufficiently high adhesive strength and high thermal conductivity.
  • Patent Document 2 discloses a resin composition containing silver particles, a thermosetting resin, and a binder resin such as an acrylic resin. The document describes that by using a thermally conductive adhesive sheet made of the resin composition, a semiconductor device having high thermal conductivity and excellent reliability can be obtained even under low-temperature sintering conditions. .
  • JP 2017-031227 A Japanese Patent Application Laid-Open No. 2021-036022
  • the adhesive strength is not sufficient, and a semiconductor device is manufactured by die-bonding the semiconductor element to a lead frame or the like.
  • the adhesive layer made of the composition may be peeled off.
  • the adhesive layer made of the composition described in the document has a high elastic modulus at room temperature (25° C.), and there is room for improvement in connection reliability with the semiconductor element.
  • the present inventors have found that a conductive paste containing a predetermined (meth)acrylate compound as a binder has excellent adhesion to a semiconductor element, a substrate, and a lead frame, and furthermore, a semiconductor device manufactured using the conductive paste is connected.
  • the inventors have found that the reliability is excellent, and completed the present invention. That is, the present invention can be shown below.
  • a cured product obtained by curing the conductive paste is provided.
  • a substrate A semiconductor element mounted on the base material via an adhesive layer, A semiconductor device is provided in which the adhesive layer is formed by curing the conductive paste.
  • a conductive paste having excellent adhesion to a semiconductor element, a substrate and a lead frame, and a semiconductor device manufactured using the conductive paste and having excellent connection reliability are provided.
  • the conductive paste of this embodiment contains a conductive filler (a) and a binder (b).
  • the conductive paste of this embodiment can contain a conductive filler (a).
  • the conductive filler (a) agglomerates to form a metal particle connection structure by subjecting the conductive paste to heat treatment. That is, in the die attach paste layer obtained by heating the conductive paste, the metal powders are present in agglomeration with each other. Thereby, electrical conductivity, thermal conductivity, and adhesion to the base material are exhibited.
  • the conductive filler (a) used in the conductive paste of the present embodiment silver powder, gold powder, platinum powder, palladium powder, copper powder, nickel powder, or alloys thereof can be used. It is preferable to use silver powder from the viewpoint of conductivity and ease of handling.
  • the shape of the conductive filler (a) is not particularly limited, but may be, for example, spherical, flake-like, and scale-like.
  • the conductive filler (a) more preferably contains spherical particles.
  • the uniformity of aggregation of the conductive filler (a) can be improved.
  • a mode in which the conductive filler (a) contains flaky particles can also be adopted.
  • the conductive filler (a) may contain both spherical particles and flaky particles.
  • the average particle size (D 50 ) of the conductive filler (a) is, for example, 0.1 ⁇ m or more and 10 ⁇ m or less, preferably 0.3 ⁇ m or more and 8 ⁇ m or less, more preferably 0.6 ⁇ m or more and 5 ⁇ m or less.
  • the average particle size of the conductive filler (a) is at least the above lower limit, adhesion is improved, excessive increase in specific surface area is suppressed, and deterioration in thermal conductivity due to contact thermal resistance is suppressed. becomes possible.
  • the average particle size of the conductive filler (a) is equal to or less than the above upper limit value, the adhesiveness is improved, and the formability of the metal particle connection structure between the conductive fillers can be improved.
  • the average particle size (D 50 ) of the conductive filler (a) is preferably 0.3 ⁇ m or more and 8 ⁇ m or less, and 0.6 ⁇ m or more and 5 ⁇ m or less. more preferably 0.6 ⁇ m or more and 2.7 ⁇ m or less, and particularly preferably 0.6 ⁇ m or more and 2.0 ⁇ m or less.
  • the average particle size (D 50 ) of the conductive filler (a) can be measured using, for example, a commercially available laser particle size distribution analyzer (eg, SALD-7000 manufactured by Shimadzu Corporation). .
  • the maximum particle size of the conductive filler (a) is not particularly limited, but can be, for example, 1 ⁇ m or more and 50 ⁇ m or less, more preferably 3 ⁇ m or more and 30 ⁇ m or less, and 4 ⁇ m or more and 18 ⁇ m or less. Especially preferred. This makes it possible to improve the adhesion more effectively.
  • the content of the conductive filler (a) in the conductive paste affects the viscosity of the conductive paste. It is preferably 40% by mass or more and 80% by mass or less.
  • the binder (b) contains terminal hydroxyl group-containing polyalkylene glycol (meth)acrylate (b1) (hereinafter also simply referred to as (meth)acrylate (b1)).
  • LEDs include shell-type LEDs, surface mount device (SMD) LEDs, COB (Chip On Board), and Power LEDs.
  • SMD surface mount device
  • COB Chip On Board
  • the package structure exposed for a predetermined time was removed and then passed through a 260° C. reflow process three times. After that, in this package structure, the presence or absence of peeling between the paste layer and the copper frame and between the sealing material and the copper frame was checked. A package structure in which peeling was not observed was evaluated as ⁇ , and a package structure in which peeling was observed was evaluated as x. Table 1 shows the results.
  • semiconductor device 100 semiconductor device 10 adhesive layer 20 semiconductor element 30 support member 32 die pad 34 outer lead 40 bonding wire 50 sealing resin 52 solder ball 200 copper frame 210 conductive paste 220 silicon chip 230 jig

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Conductive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

Une pâte conductrice selon la présente invention comprend une charge conductrice (a) et un liant (b), le liant (b) comprenant un polyalkylèneglycol (méth)acrylate contenant un groupe hydroxyle terminal (b1).
PCT/JP2022/022051 2021-06-07 2022-05-31 Pâte conductrice, produit durci et dispositif semi-conducteur WO2022259905A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023527626A JP7464198B2 (ja) 2021-06-07 2022-05-31 導電性ペースト、硬化物および半導体装置
CN202280040924.7A CN117461120A (zh) 2021-06-07 2022-05-31 导电性膏、固化物和半导体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-094962 2021-06-07
JP2021094962 2021-06-07

Publications (1)

Publication Number Publication Date
WO2022259905A1 true WO2022259905A1 (fr) 2022-12-15

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ID=84424978

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/022051 WO2022259905A1 (fr) 2021-06-07 2022-05-31 Pâte conductrice, produit durci et dispositif semi-conducteur

Country Status (4)

Country Link
JP (1) JP7464198B2 (fr)
CN (1) CN117461120A (fr)
TW (1) TW202313897A (fr)
WO (1) WO2022259905A1 (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015057825A (ja) * 2008-04-30 2015-03-26 日立化成株式会社 接続材料及び半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015057825A (ja) * 2008-04-30 2015-03-26 日立化成株式会社 接続材料及び半導体装置

Also Published As

Publication number Publication date
JP7464198B2 (ja) 2024-04-09
JPWO2022259905A1 (fr) 2022-12-15
TW202313897A (zh) 2023-04-01
CN117461120A (zh) 2024-01-26

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