WO2022257511A1 - 阵列基板、显示面板和显示装置 - Google Patents

阵列基板、显示面板和显示装置 Download PDF

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Publication number
WO2022257511A1
WO2022257511A1 PCT/CN2022/079228 CN2022079228W WO2022257511A1 WO 2022257511 A1 WO2022257511 A1 WO 2022257511A1 CN 2022079228 W CN2022079228 W CN 2022079228W WO 2022257511 A1 WO2022257511 A1 WO 2022257511A1
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Prior art keywords
electrode
electrodes
chain
substrate
branch
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PCT/CN2022/079228
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English (en)
French (fr)
Inventor
杨晓光
黄晓宇
胡杨
郭远辉
张维
石侠
陈创
韩杰
Original Assignee
京东方科技集团股份有限公司
武汉京东方光电科技有限公司
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Priority to US18/022,794 priority Critical patent/US20230361130A1/en
Publication of WO2022257511A1 publication Critical patent/WO2022257511A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes

Definitions

  • the present disclosure belongs to the field of display technology, and in particular relates to an array substrate, a display panel and a display device.
  • the present disclosure aims to solve at least one of the technical problems in the prior art, and provides an array substrate, a display panel and a display device.
  • an array substrate including:
  • a plurality of gate lines, a plurality of data lines, and a plurality of pixel units are all arranged on the substrate; the plurality of gate lines and the plurality of data lines are intersected to define the plurality of pixel units; the plurality of Each of the pixel units includes a display electrode; wherein, the display electrode includes at least one electrode part; each of the electrode parts includes a main chain electrode and a plurality of branch chain electrodes, and the plurality of branch chain electrodes are all electrically connected to the main chain electrode;
  • the black matrix layer is arranged on the side of the pixel unit away from the substrate; the black matrix layer includes a plurality of openings and light shielding parts; the orthographic projection of one opening on the substrate covers one display The orthographic projection of the branch chain electrode of the electrode on the substrate; the orthographic projection of the light shielding part on the substrate covers the orthographic projection of the gate line, the data line and the main chain electrode on the substrate .
  • the number of the electrode parts in each of the display electrodes is multiple, and the main-chain electrodes in the adjacent electrode parts are located on different sides of the branch-chain electrodes.
  • the main-chain electrodes in the adjacently arranged electrode parts are electrically connected by connecting electrodes.
  • connection electrodes are located between adjacent electrode parts and extend in the same direction as the branch electrodes.
  • the extension direction of the connecting electrodes is parallel to the extension direction of the branch electrodes.
  • the angle between the connection electrode and the main chain electrode is greater than or equal to 90 degrees.
  • the included angle between the extending direction of the branched electrodes and the grid line ranges from 7 degrees to 20 degrees.
  • the pixel units are arranged in an array on the substrate, and each pixel unit includes a plurality of sub-pixels, and the opening shapes of the black matrix layer corresponding to each sub-pixel in each pixel unit are different, corresponding to The openings of the black matrix corresponding to the sub-pixels of adjacent pixel units have different shapes, and the pixel units with the same opening shape are arranged at intervals.
  • the width of the main chain electrode is greater than or equal to 2.3 microns and less than or equal to 3 microns, and the width of each of the branch chain electrodes is greater than or equal to 1.3 microns and less than or equal to 2.2 microns.
  • the light-shielding portion includes a main body portion and a protruding portion
  • the orthographic projection of the one protruding portion on the substrate covers the orthographic projection of the one main-chain electrode on the substrate
  • the The width of the protrusions ranges from 13 to 25 microns.
  • an embodiment of the present disclosure provides a display panel, including a color filter substrate and an array substrate, and the array substrate includes:
  • a plurality of gate lines, a plurality of data lines, and a plurality of pixel units are all arranged on the substrate; the plurality of gate lines and the plurality of data lines are intersected to define the plurality of pixel units; the plurality of Each of the pixel units includes a display electrode; wherein, the display electrode includes at least one electrode part; each of the electrode parts includes a main chain electrode and a plurality of branch chain electrodes, and the plurality of branch chain electrodes are electrically connected to the main chain electrode;
  • the color filter substrate includes:
  • the black matrix layer is arranged on the side of the pixel unit away from the substrate; the black matrix layer includes a plurality of openings and light shielding parts; the orthographic projection of one opening on the substrate covers one display The orthographic projection of the branch chain electrode of the electrode on the substrate; the orthographic projection of the light shielding part on the substrate covers the orthographic projection of the gate line, the data line and the main chain electrode on the substrate .
  • the number of the electrode parts in each of the display electrodes is multiple, and the main-chain electrodes in the adjacent electrode parts are located on different sides of the branch-chain electrodes.
  • the main-chain electrodes in the adjacently arranged electrode parts are electrically connected by connecting electrodes.
  • connection electrodes are located between adjacent electrode parts and extend in the same direction as the branch electrodes.
  • the extension direction of the connecting electrodes is parallel to the extension direction of the branch electrodes.
  • the angle between the connection electrode and the main chain electrode is greater than or equal to 90 degrees.
  • the included angles between the extension direction of the branched electrodes and the grid lines are all in a range of 7 degrees to 20 degrees.
  • the pixel units are arranged in an array on the substrate, and each pixel unit includes a plurality of sub-pixels, and the opening shapes of the black matrix layer corresponding to each sub-pixel in each pixel unit are different, corresponding to The openings of the black matrix corresponding to the sub-pixels of adjacent pixel units have different shapes, and the pixel units with the same opening shape are arranged at intervals.
  • the width of the main chain electrode is greater than or equal to 2.3 microns and less than or equal to 3 microns, and the width of each of the branch chain electrodes is greater than or equal to 1.3 microns and less than or equal to 2.2 microns.
  • the light-shielding portion includes a main body portion and a protruding portion
  • the orthographic projection of the one protruding portion on the substrate covers the orthographic projection of the one main-chain electrode on the substrate
  • the The width of the protrusions ranges from 13 to 25 microns.
  • the display panel further includes a color-resisting structure, and the color-resisting structure is disposed at the opening of the black matrix.
  • an embodiment of the present disclosure provides a display device, the display device including the above-mentioned array substrate or the above-mentioned display panel.
  • FIG. 1 is a schematic structural view of an exemplary array substrate
  • FIG. 2 is a schematic diagram of light effects of the array substrate shown in FIG. 1;
  • FIG. 3 is a schematic structural diagram of an array substrate provided by an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of a black matrix layer of another array substrate provided by an embodiment of the present disclosure.
  • FIG. 5 is a schematic structural diagram of another array substrate provided by an embodiment of the present disclosure.
  • a thin film transistor-liquid crystal display is a display that combines a thin film transistor (TFT) with a liquid crystal display panel using microelectronic fine processing technology. panel. That is to say, the technology of microelectronics fine processing on silicon (si) is transplanted to the processing of TFT array on large-area glass, and then the obtained array substrate with TFT is combined with another color filter layer The film substrate is boxed, and then after the process such as polarizer coating, etc., the liquid crystal display panel is finally obtained.
  • TFT-LCD thin film transistor-liquid crystal display
  • the array substrate generally includes pixel electrodes and thin film transistors for controlling the switching of sub-pixels
  • the color filter substrate generally includes a common electrode, a black matrix and a color resistance structure.
  • an exemplary array substrate 10 is provided.
  • the array substrate 10 includes a substrate, a plurality of gate lines 11 extending along the X direction, and a plurality of data lines 12 extending along the Y direction.
  • the plurality of gate lines 11 and A plurality of data lines 12 are intersected to define a plurality of pixel units, and each of the plurality of pixel units includes a display electrode 13, wherein the display electrode can be a common electrode or a pixel electrode.
  • This embodiment is based on display
  • the electrode is a pixel electrode as an example for description.
  • the pixel unit not only includes the above-mentioned pixel electrode 13, but also includes a thin film transistor and a common electrode; wherein, the pixel electrode 13 adopts a slit electrode, and the common electrode adopts a plate electrode, so The common electrode is closer to the substrate than the pixel electrodes.
  • the gates of the thin film transistors in the pixel units arranged side by side in the X direction are connected to the same gate line 11, and the sources of the thin film transistors in the pixel units arranged side by side in the Y direction are connected to the same gate line 11.
  • the data line 12 is described as an example.
  • the pixel electrode 13 in each pixel unit is connected to the drain of the thin film transistor.
  • the X direction and the Y direction may also be other arbitrary directions, as long as the X direction and the Y direction intersect, and no specific limitation is made here.
  • the pixel electrode 13 in the array substrate 10 includes at least one electrode portion 131, and each electrode portion 131 includes a main chain electrode 1311 extending along the Y direction and a plurality of branch chain electrodes 1312 extending along the X direction, In addition, the multiple branch electrodes 1312 are electrically connected to the main-chain electrode 1311 .
  • the pixel electrode 13 includes two electrode portions 131 as an example for illustration.
  • Figure 2 is a schematic diagram of the light effect of the array substrate shown in Figure 1.
  • an embodiment of the present disclosure provides an array substrate.
  • the structure of the array substrate is substantially the same as that of the array substrate shown in FIG.
  • the black matrix layer 14 on the side away from the substrate, the black matrix layer 14 includes a plurality of openings 141 and a light shielding portion 142 .
  • the opening 141 of the black matrix layer corresponds to the pixel electrode 13, and the orthographic projection of the opening 141 on the substrate covers the orthographic projection of the branch electrode 1312 of the pixel electrode 13 on the substrate, and the orthographic projection of the light shielding part 142 on the substrate covers the grid The orthographic projection of the line 11, the data line 12 and the main chain electrode 1311 on the substrate.
  • the main chain electrode 1311 in the pixel unit is under the black screen of the array substrate.
  • the corresponding area of disorderly arrangement of liquid crystal molecules is covered by the black matrix layer 14, which can reduce the risk of light leakage in this area and reduce the brightness of the black state.
  • the area of disorderly arrangement of liquid crystal molecules itself contributes to the light transmittance. Small, low luminous efficiency, after being covered by the black matrix layer 14, it has little effect on the brightness of the white state, which means that the brightness of the white state remains unchanged and the brightness of the black state decreases, thereby improving the display contrast.
  • the shapes of the main chain electrodes 1311 and the branch chain electrodes 1312 can be set according to specific conditions, and are not specifically limited here.
  • the shapes of the main chain electrodes 1311 and the branch chain electrodes 1312 are strips, and when the shapes of the main chain electrodes 1311 and the branch chain electrodes 1312 are all strips, the size of the main chain electrodes 1311 can be reduced.
  • the area of the opening 141 is occupied by the branched electrode 1312, thereby increasing the light transmittance.
  • the number of main-chain electrodes 1311 and branch-chain electrodes 1312 can also be set according to specific situations, and no further examples will be given here.
  • the materials of the main chain electrodes 1311 and the branch chain electrodes 1312 can also be selected from light-transmitting materials, such as metal oxides.
  • the main chain electrodes 1311 and the branch chain electrodes 1312 are made of indium tin oxide (ITO).
  • the number of electrode parts 131 in each display electrode 13 can be one or more. Different sides of branched electrodes 1312 . As shown in FIG. 1 , this embodiment is described by taking two electrode portions 131 as an example, wherein the two electrode portions 131 are respectively a first electrode portion and a second electrode portion. In FIG. 1
  • the main chain electrodes 1311 of the first electrode part and the second electrode part are located on different sides of the branch chain electrodes 1312, that is, the main chain electrodes 1311 of the first electrode part are located on the left side of the branch chain electrodes 1312,
  • the main chain electrode 1311 of the second electrode part is located on the right side of its branch chain electrode 1312, therefore, the branch chain electrodes 1312 connected to the main chain electrode 1311 can be more evenly distributed on different sides of the main chain electrode 1311, so it can be
  • the symmetry of the pixel electrode 13 is improved, thereby improving the uniformity of the transmittance of the display panel.
  • the main-chain electrodes 1311 in adjacent electrode parts 131 are electrically connected through the connecting electrodes 1313 .
  • the main chain electrode 1311 in the first electrode part is connected to the main chain electrode 1311 in the second electrode part through the connection electrode 1313 .
  • the signal on the main chain electrode 1311 can be transmitted to each branch chain electrode 1312 through the connection electrode 1313, and then cooperate with the common electrode to realize the display function.
  • the connecting electrodes 1313 are located between adjacent electrode parts 131 and extend in the same direction as the branch electrodes 1312 .
  • connection electrodes 1313 are located between the adjacent electrode portions 131 and extend in the same direction as the branch electrodes 1312 , the light transmittance of the pixel unit can be improved.
  • the extension direction of the connecting electrodes 1313 is parallel to the extension direction of the branch electrodes 1312 .
  • the angle between the connection electrode 1313 and the main chain electrode 1311 is greater than or equal to 90 degrees.
  • the included angle between the connecting electrodes 1313 and the main chain electrodes 1311 is greater than or equal to 90 degrees, it is possible to prevent the transmittance of the display panel from being affected by the long length of the main chain electrodes 1311 .
  • the angle between the extension direction of the branch electrodes 1312 and the grid lines 11 ranges from 7 degrees to 20 degrees.
  • the included angle ⁇ between the extension direction of the branch electrodes 1312 and the grid lines 11 ranges from 7 degrees to 20 degrees.
  • the included angle ⁇ is set to be small, the required deflection angle of the liquid crystal will be relatively large, which will cause a delay when the display panel displays images. If the included angle ⁇ is set too large, the deflection angle required by the liquid crystal will be too small, and it will be difficult to determine the deflection direction when the liquid crystal is deflected, and it will take a long time to determine the deflection direction, which will cause a delay in displaying images on the display panel.
  • the angle ⁇ between the extending direction of the branch electrodes 1312 and the gate lines 11 ranges from 7 degrees to 20 degrees, which will not cause delay when displaying images on the display panel.
  • the pixel units are arranged in an array on the substrate, and each pixel unit includes a plurality of sub-pixels, and the openings 141 of the black matrix layer 14 corresponding to the sub-pixels in each pixel unit have different shapes, corresponding to The shapes of the openings 141 of the black matrix layer 14 corresponding to the sub-pixels of the adjacent pixel units are all different, and the pixel units having the same shape of the openings 141 are arranged at intervals.
  • each pixel unit includes 3 sub-pixels as an example.
  • four pixel units are arranged in an array on the substrate, each pixel unit includes three sub-pixels, and the openings 141 of the black matrix layer 14 corresponding to the three sub-pixels have different shapes.
  • the shapes of the openings 141 of the black matrix layer 14 corresponding to the sub-pixels of adjacent pixel units are all different, and the pixel units with the same shape of the opening 141 are arranged at intervals, that is, two pixel units on the diagonal line
  • the openings 141 of the black matrix layer 14 corresponding to the sub-pixels have the same shape, so that the transmittance of the pixel units in two adjacent rows is guaranteed to be the same, thereby improving the defect of horizontal stripe Mura and improving the viewing angle.
  • the width of the main chain electrode 1311 may be greater than or equal to 2.3 ⁇ m and less than or equal to 3 ⁇ m. That is, the width of the main chain electrode 1311 is neither too narrow nor too wide. On the one hand, it can prevent the main chain electrodes 1311 from being broken due to the width of the main chain electrodes 1311 being too narrow, and on the other hand, it can avoid affecting the transmittance of the display panel due to the width of the main chain electrodes 1311 being too wide.
  • the width of the branch electrode 1312 may be greater than or equal to 1.3 ⁇ m and less than or equal to 2.2 ⁇ m. That is, the width of the branched electrodes 1312 can be smaller than the width of the main chained electrodes 1311, and the width of the branched electrodes 1312 will not be too narrow, which can prevent the occurrence of the branched electrodes 1312 on the premise of improving the transmittance of the display panel. fracture.
  • the light-shielding portion 142 includes a main body and a protruding portion.
  • the orthographic projection of a protruding portion on the substrate covers the orthographic projection of a main chain electrode 1311 on the substrate.
  • the width range of the protruding portion is 13 to 25 microns. In this embodiment, since the width of the protrusions ranges from 13 to 25 microns, the display contrast can be improved while ensuring the aperture ratio.
  • an embodiment of the present disclosure provides a display panel, which includes a color filter substrate and an array substrate.
  • the array substrate includes a base, a plurality of gate lines and a plurality of data lines disposed on the base, and the plurality of gate lines and the plurality of data lines are intersected to define a plurality of pixel units.
  • Each of the plurality of pixel units includes a display electrode; wherein, the display electrode includes at least one electrode portion; each electrode portion includes a main chain electrode and a plurality of branch chain electrodes, and the plurality of branch chain electrodes are connected to the The main chain electrodes are electrically connected.
  • the color filter substrate includes a black matrix layer and a color resist structure
  • the black matrix layer includes a plurality of openings and light shielding parts
  • the color resist structure is arranged at the openings of the black matrix.
  • the black matrix layer is arranged on the side of the pixel unit away from the base, the orthographic projection of an opening on the base covers the orthographic projection of a branch electrode of a display electrode on the base, and the orthographic projection of the shading part on the base covers the grid lines, data Orthographic projection of wire and backbone electrodes on the substrate.
  • the light-shielding part of the black matrix layer not only covers the gate line and the data line, but also covers the main chain electrode, therefore, under the black screen, the liquid crystal molecule disorderly arranged area corresponding to the main chain electrode in the pixel unit is covered. Covering by the black matrix layer can reduce the risk of light leakage in this area and reduce the brightness of the black state.
  • the chaotic arrangement of liquid crystal molecules contributes little to the light transmittance, and the luminous efficiency is low. After covering, the influence on the brightness of the white state is small, which means that the brightness of the white state remains unchanged and the brightness of the black state decreases, thereby improving the contrast of the display panel.
  • each display electrode there are multiple electrode parts in each display electrode, and the main chain electrodes in adjacent electrode parts are located on different sides of the branch chain electrodes.
  • the main-chain electrodes in adjacent electrode sections are electrically connected through connecting electrodes.
  • the connecting electrodes are located between adjacent electrode parts and extend in the same direction as the branch electrodes.
  • the extension direction of the connecting electrodes is parallel to the extension direction of the branch electrodes.
  • the angle between the connection electrode and the main chain electrode is greater than or equal to 90 degrees.
  • the included angles between the extending direction of the branched electrodes and the grid lines are all in the range of 7 degrees to 20 degrees.
  • the pixel units are arranged in an array on the substrate, each pixel unit includes a plurality of sub-pixels, the opening shapes of the black matrix layer corresponding to each sub-pixel in each pixel unit are different, and the adjacent pixel units The openings of the black matrix corresponding to each sub-pixel have different shapes, and pixel units with the same opening shape are arranged at intervals.
  • the width of the main chain electrode is greater than or equal to 2.3 microns and less than or equal to 3 microns, and the width of each branch chain electrode is greater than or equal to 1.3 microns and less than or equal to 2.2 microns.
  • the light-shielding part includes a main body and a protruding part
  • the orthographic projection of a protruding part on the base covers the orthographic projection of a main-chain electrode on the base
  • the width of the protruding part ranges from 13 to 25 Microns.
  • an embodiment of the present disclosure provides a display device, which includes the above-mentioned array substrate or the above-mentioned display panel.

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  • Physics & Mathematics (AREA)
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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
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  • Liquid Crystal (AREA)

Abstract

一种阵列基板（10）、显示面板和显示装置。阵列基板（10）包括：基底；多条栅线（11）、多条数据线（12）和多个像素单元，均设置在基底上；多条栅线（11）和多条数据线（12）交叉设置，并限定出多个像素单元；多个像素单元中的每个均包括显示电极（13）；其中，显示电极（13）包括至少一个电极部（131）；每个电极部（131）包括主链电极（1311）和多条支链电极（1312），且多条支链电极（1312）均与主链电极（1311）电连接；黑矩阵层（14），设置在像素单元背离基底的一侧；黑矩阵层（14）包括多个开口部（141）和遮光部（142）；一个开口部（141）在基底上的正投影覆盖一个显示电极（13）的支链电极（1312）在基底上的正投影；遮光部（142）在基底上的正投影覆盖栅线（11）、数据线（12）和主链电极（1311）在基底上的正投影。

Description

阵列基板、显示面板和显示装置
本申请要求申请日为2021年6月9日、申请号为“202110643431.X”、发明名称为“阵列基板、显示面板和显示装置”的优先权。
技术领域
本公开属于显示技术领域，具体涉及一种阵列基板、显示面板和显示装置。
背景技术
随着显示技术的发展，显示屏、电视、手机等电子设备的分辨率越来越高，与分辨率提高对应的是像素数量的增多，像素数量的增多会带来各种各样需要攻克的技术难题。
现有的8K产品中，由于8K产品的像素密度(Pixelsper inch，PPI)高，像素小，整体开口率较低，因此，如何在保证像素透过率的基础上，同时大幅提升对比度成为本领域亟需解决的问题。
发明内容
本公开旨在至少解决现有技术中存在的技术问题之一，提供一种阵列基板、显示面板和显示装置。
第一方面，本公开实施例提供一种阵列基板，其中，包括：
基底；
多条栅线、多条数据线和多个像素单元，均设置在所述基底上；所述多条栅线和多条数据线交叉设置，并限定出所述多个像素单元；所述多个像素单元中的每个均包括显示电极；其中，所述显示电极包括至少一个电极部；每个所述电极部包括主链电极和多条支链电极，且所述多条支链电极均与所述主链电极电连接；
黑矩阵层，设置在所述像素单元背离所述基底的一侧；所述黑矩阵层包括多个开口部和遮光部；一个所述开口部在所述基底上的正投影覆盖一个所述显示电极的支链电极在所述基底上的正投影；所述 遮光部在所述基底上的正投影覆盖所述栅线、所述数据线和所述主链电极在所述基底上的正投影。
可选地，每个所述显示电极中的所述电极部的数量为多个，且相邻设置的所述电极部中的主链电极位于支链电极的不同侧。
可选地，相邻设置的所述电极部中的主链电极通过连接电极电连接。
可选地，所述连接电极位于相邻设置的所述电极部之间，且与所述支链电极的延伸方向相同。
可选地，所述连接电极的延伸方向与所述支链电极的延伸方向平行。
可选地，所述连接电极与所述主链电极的夹角大于或等于90度。
可选地，所述支链电极的延伸方向与栅线之间的夹角的范围为7度至20度。
可选地，所述像素单元在所述基底上呈阵列排布，所述每个像素单元包括多个亚像素，每个像素单元中各个亚像素所对应的黑矩阵层的开口形状不同，相邻像素单元的各个亚像素所对应的黑矩阵的开口的形状均不相同，具有相同所述开口形状的像素单元间隔设置。
可选地，所述主链电极的宽度大于或等于2.3微米且小于或等于3微米，每个所述支链电极的宽度大于或等于1.3微米且小于或等于2.2微米。
可选地，所述遮光部包括主体部和凸出部，所述一个凸出部在所述基底上的正投影覆盖所述一个所述主链电极在所述基底上的正投影，所述凸出部的宽度范围为13～25微米。
第二方面，本公开实施例提供一种显示面板，包括彩膜基板和阵列基板，所述阵列基板包括：
基底；
多条栅线、多条数据线和多个像素单元，均设置在所述基底上；所述多条栅线和多条数据线交叉设置，并限定出所述多个像素单元；所述多个像素单元中的每个均包括显示电极；其中，所述显示电极包括至少一个电极部；每个所述电极部包括主链电极和多条支链电极， 且所述多条支链电极均与所述主链电极电连接；
所述彩膜基板包括：
黑矩阵层，设置在所述像素单元背离所述基底的一侧；所述黑矩阵层包括多个开口部和遮光部；一个所述开口部在所述基底上的正投影覆盖一个所述显示电极的支链电极在所述基底上的正投影；所述遮光部在所述基底上的正投影覆盖所述栅线、所述数据线和所述主链电极在所述基底上的正投影。
可选地，每个所述显示电极中的所述电极部的数量为多个，且相邻设置的所述电极部中的主链电极位于支链电极的不同侧。
可选地，相邻设置的所述电极部中的主链电极通过连接电极电连接。
可选地，所述连接电极位于相邻设置的所述电极部之间，且与所述支链电极的延伸方向相同。
可选地，所述连接电极的延伸方向与所述支链电极的延伸方向平行。
可选地，所述连接电极与所述主链电极的夹角大于或等于90度。
可选地，所述支链电极延伸方向与栅线之间的夹角的范围均为7度至20度。
可选地，所述像素单元在所述基底上呈阵列排布，所述每个像素单元包括多个亚像素，每个像素单元中各个亚像素所对应的黑矩阵层的开口形状不同，相邻像素单元的各个亚像素所对应的黑矩阵的开口的形状均不相同，具有相同所述开口形状的像素单元间隔设置。
可选地，所述主链电极的宽度大于或等于2.3微米且小于或等于3微米，每个所述支链电极的宽度大于或等于1.3微米且小于或等于2.2微米。
可选地，所述遮光部包括主体部和凸出部，所述一个凸出部在所述基底上的正投影覆盖所述一个所述主链电极在所述基底上的正投影，所述凸出部的宽度范围为13～25微米。
可选地，显示面板还包括色阻结构，所述色阻结构设置在所述黑矩阵的开口部处。
第三方面，本公开实施例提供一种显示装置，所述显示装置包括上述的阵列基板或上述的显示面板。
附图说明
附图是用来提供对本公开的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本公开，但并不构成对本公开的限制。在附图中：
图1为一种示例性的阵列基板的结构示意图；
图2为图1所示的阵列基板的光效示意图；
图3为本公开实施例提供的一种阵列基板的结构示意图；
图4为本公开实施例提供的另一种阵列基板的黑矩阵层的结构示意图；
图5为本公开实施例提供的另一种阵列基板的结构示意图。
具体实施方式
为使本领域技术人员更好地理解本公开的技术方案，下面结合附图和具体实施方式对本公开作进一步详细描述。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
现有技术中，薄膜晶体管液晶显示面板(thin film transistor-liquid  crystal display，TFT-LCD)是采用微电子精细加工的技术将薄膜晶体管(thin film transistor，TFT)与液晶显示面板结合的一种显示面板。也即是，将在硅(si)上进行微电子精细加工的技术，移植到在大面积玻璃上进行TFT阵列的加工，再将得到的具有TFT的阵列基板与另一片带彩膜层的彩膜基板进行对盒，再经过后工序如偏光片贴覆等过程，最后得到液晶显示面板。在液晶显示面板中，阵列基板一般包括有像素电极和控制子像素开关的薄膜晶体管，彩膜基板一般包括公共电极、黑矩阵和色阻结构。当像素电极和公共电极之间形成控制液晶分子偏转的电场时，光线透过阵列基板后照射到液晶分子层，经过液晶分子的偏转作用后，出射到彩膜基板，然后经过彩膜基板上的红、绿、蓝三种颜色的色阻后，能够在显示面板表面以红、绿、蓝三种颜色的光出射，最终在显示面板表面形成图案显示。
如图1所示，提供一种示例性的阵列基板10，阵列基板10包括基底、多条沿X方向延伸的栅线11和多条沿Y方向延伸的数据线12，多条栅线11和多条数据线12交叉设置并限定出多个像素单元，多个像素单元中的每个均包括显示电极13，其中，显示电极可以为公共电极，也可以为像素电极，本实施例是以显示电极为像素电极为例进行说明。
需要说明的是，在本公开实施例中，像素单元不仅包括上述的像素电极13，还可以包括薄膜晶体管和公共电极；其中，像素电极13采用狭缝电极，而公共电极采用板状电极，因此公共电极相较像素电极更靠近基底。另外，在本公开实施例中以位于在X方向并排设置的像素单元中的薄膜晶体管的栅极连接同一条栅线11，在Y方向并排设置的像素单元中的薄膜晶体管的源极连接同一条数据线12为例进行描述。每个像素单元中的像素电极13与薄膜晶体管的漏极连接。在本公开实施例中，X方向、Y方向还可以是其他任意方向，只要X方向和Y方向相交即可，在此不做具体限定。
如图1所示，该阵列基板10中的像素电极13包括至少一个电极部131，每个电极部131包括沿Y方向延伸的主链电极1311和多条沿X方向延伸的支链电极1312，且多条支链电极1312均与主链电 极1311电连接，本实施以像素电极13包括两个电极部131为例进行说明。
图2为图1所示阵列基板的光效示意图，如图2所示，在主链电极1311区域存在液晶分子紊乱排布的情况，由于液晶分子排布紊乱，则主链电极区域不能正常透光。因此，在白画面下，紊乱区域对穿透率贡献很小，而在黑画面下，紊乱区域会漏光，从而导致暗态亮度升高，进而影响显示对比度。
为了解决上述问题，本公开实施例提供一种阵列基板，如图3所示，该阵列基板与图1所示的阵列基板的结构大致相同，区别在于，该阵列基板上还包括设置在像素单元背离基底的一侧的黑矩阵层14，该黑矩阵层14包括多个开口部141和遮光部142。黑矩阵层的开口部141与像素电极13对应设置，开口部141在基底上的正投影覆盖像素电极13的支链电极1312在基底上的正投影，遮光部142在基底上的正投影覆盖栅线11、数据线12和主链电极1311在基底上的正投影。
在本实施例中，由于黑矩阵层14的遮光部142不仅覆盖栅线11和数据线12，而且还覆盖主链电极1311，因此，阵列基板在黑画面下，像素单元内的主链电极1311对应的液晶分子紊乱排布区域被黑矩阵层14遮住，能够降低该区域产生漏光的风险，降低了黑态亮度，而在白画面下，液晶分子紊乱排布区域本身对光穿透率贡献小，发光效率低，被黑矩阵层14遮住后对白态亮度影响较小，相当于白态亮度不变而黑态亮度降低，进而提高了显示对比度。
可选地，主链电极1311和支链电极1312的形状可以根据具体情况进行设置，在此不做具体限定。例如，如图1所示，主链电极1311和支链电极1312均的形状均为条状，当主链电极1311和支链电极1312均的形状均为条状时，可以减小主链电极1311和支链电极1312占开口部141的面积，进而增加透光率。另外，主链电极1311和支链电极1312的数量也可以根据具体情况进行设置，在此不再一一举例说明。
进一步地，为了增加透光率，主链电极1311和支链电极1312 的材料还可以选用透光材料，例如金属氧化物等。优选的，主链电极1311和支链电极1312的材料为氧化铟锡(ITO)。
可选地，每个显示电极13中的电极部131的数量可以为一个也可以为多个，当电极部131的数量为多个时，相邻设置的电极部131中的主链电极1311位于支链电极1312的不同侧。如图1所示，本实施例是以电极部131的数量为两个为例进行说明，其中，两个电极部131分别为第一电极部和第二电极部。在图1中，由于第一电极部和第二电极部的主链电极1311位于支链电极1312的不同侧，也即第一电极部的主链电极1311位于其支链电极1312的左侧，第二电极部的主链电极1311位于其支链电极1312的右侧，因此，可以使得与主链电极1311连接的支链电极1312可以较为均匀的分布于主链电极1311的不同侧，故可提高像素电极13的对称性较，进而提高显示面板的透过率的均一性。
可选地，相邻设置的电极部131中的主链电极1311通过连接电极1313电连接。例如，如图1所示，第一电极部中主链电极1311与第二电极部中的主链电极1311通过连接电极电1313连接。当通过数据线向像素电极13写入信号时，可通过连接电极1313将主链电极1311上的信号传递到各个支链电极1312，进而与公共电极配合实现显示功能。
可选地，连接电极1313位于相邻设置的电极部131之间，且与支链电极1312的延伸方向相同。
在本实施例中，由于连接电极1313位于相邻设置的电极部131之间，且与支链电极1312的延伸方向相同，因此，可以提高像素单元的透光率。优选地，连接电极1313的延伸方向与支链电极1312的延伸方向平行。
可选地，连接电极1313与主链电极1311的夹角大于或等于90度。在实施例中，通过连接电极1313与主链电极1311的夹角设置为大于或等于90度，可以防止由于主链电极1311的长度较长，影响显示面板的透过率。
可选地，支链电极1312的延伸方向与栅线11之间的夹角的范 围为7度至20度。
如图1所示，支链电极1312的延伸方向与栅线11之间的夹角γ的范围为7度至20度。
若将夹角γ设置的较小，会导致液晶所需偏转的角度较大，进而导致显示面板显示图像时出现延迟。若将夹角γ设置的较大，会导致液晶所需偏转的角度过小，液晶偏转时难以确定其偏转方向，确定偏转方向所需的时间较长，进而导致显示面板显示图像时出现延迟。
因此，在本实施例中，支链电极1312的延伸方向与栅线11之间的夹角γ的范围为7度至20度，不会导致显示面板显示图像时出现延迟。
可选地，所述像素单元在基底上呈阵列排布，每个像素单元包括多个亚像素，每个像素单元中各个亚像素所对应的黑矩阵层14的开口部141的形状不同，相邻像素单元的各个亚像素所对应的黑矩阵层14的开口部141的形状均不相同，具有相同开口部141形状的像素单元间隔设置。
具体的，如图4和图5所示，本实施例是以4个像素单元且每个像素单元包括3个亚像素为例进行说明。在本实施例中，四个像素单元在基底上呈阵列排布，每个像素单元均包括三个亚像素，三个亚像素所对应的黑矩阵层14的开口部141形状均不相同。进一步地，相邻像素单元的各个亚像素所对应的黑矩阵层14的开口部141的形状均不相同，具有相同开口部141形状的像素单元间隔设置，即对角线上的两个像素单元中的亚像素所对应的黑矩阵层14的开口部141形状相同，从而保证了相邻两行像素单元的透过率相同，进而改善了横纹Mura不良，同时改善了视角。
可选地，主链电极1311的宽度可以大于或等于2.3μm且小于或等于3μm。也即是，该主链电极1311的宽度不会太窄也不会太宽。一方面能够避免由于主链电极1311的宽度太窄导致该主链电极1311断裂，另一方面能够避免由于主链电极1311的宽度太宽影响显示面板的透过率。
进一步地，支链电极1312的宽度可以大于或等于1.3μm且小 于或等于2.2μm。也即是，支链电极1312的宽度可以小于主链电极1311的宽度，且支链电极1312的宽度不会过窄，能够在提高显示面板的透过率的前提下，避免支链电极1312发生断裂。
可选地，如图3所示，遮光部142包括主体部和凸出部，一个凸出部在基底上的正投影覆盖一个主链电极1311在基底上的正投影，凸出部的宽度范围为13～25微米。在本实施例中，由于凸出部的宽度范围为13～25微米，因此，可以在保证开口率的同时，提高显示的对比度。
第二方面，本公开实施例提供一种显示面板，该显示面板包括彩膜基板和阵列基板。具体的，阵列基板包括基底、设置在基底上的多条栅线和多条数据线，多条栅线和多条数据线交叉设置，并限定出多个像素单元。多个像素单元中的每个均包括显示电极；其中，显示电极包括至少一个电极部；每个电极部包括主链电极和多条支链电极，且所述多条支链电极均与所述主链电极电连接。
彩膜基板包括黑矩阵层和色阻结构，黑矩阵层包括多个开口部和遮光部，色阻结构设置在黑矩阵的开口部处。黑矩阵层设置在像素单元背离基底的一侧，一个开口部在基底上的正投影覆盖一个显示电极的支链电极在基底上的正投影，遮光部在基底上的正投影覆盖栅线、数据线和主链电极在所述基底上的正投影。
在本实施例中，由于黑矩阵层的遮光部不仅覆盖栅线和数据线，还覆盖主链电极，因此，在黑画面下，像素单元内的主链电极对应的液晶分子紊乱排布区域被黑矩阵层遮住，能够降低该区域产生漏光的风险，降低了黑态亮度，而在白画面下，液晶分子紊乱排布区域本身对光穿透率贡献小，发光效率低，被黑矩阵层遮住后对白态亮度影响较小，相当于白态亮度不变而黑态亮度降低，进而提高了显示面板的对比度。
下述各个实施例，是以黑矩阵层设置在彩膜基板为例进行说明，其原理与黑矩阵层设置在阵列基板中的原理相同，因此，下述各个实施例的原理和效果，不再一一赘述。
可选地，每个显示电极中的电极部的数量为多个，且相邻设置 的电极部中的主链电极位于支链电极的不同侧。
可选地，相邻设置的电极部中的主链电极通过连接电极电连接。
可选地，连接电极位于相邻设置的电极部之间，且与支链电极的延伸方向相同。
可选地，连接电极的延伸方向与支链电极的延伸方向平行。
可选地，连接电极与主链电极的夹角大于或等于90度。
可选地，支链电极延伸方向与栅线之间的夹角的范围均为7度至20度。
可选地，像素单元在所述基底上呈阵列排布，每个像素单元包括多个亚像素，每个像素单元中各个亚像素所对应的黑矩阵层的开口形状不同，相邻像素单元的各个亚像素所对应的黑矩阵的开口的形状均不相同，具有相同所述开口形状的像素单元间隔设置。
可选地，主链电极的宽度大于或等于2.3微米且小于或等于3微米，每个支链电极的宽度大于或等于1.3微米且小于或等于2.2微米。
可选地，遮光部包括主体部和凸出部，一个凸出部在所述基底上的正投影覆盖一个主链电极在所述基底上的正投影，凸出部的宽度范围为13～25微米。
第三方面，本公开实施例提供一种显示装置，该显示装置包括上述的阵列基板或上述的显示面板。
可以理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本公开的保护范围。

Claims (22)

  1. 一种阵列基板，其中，包括：
    基底；
    多条栅线、多条数据线和多个像素单元，均设置在所述基底上；所述多条栅线和多条数据线交叉设置，并限定出所述多个像素单元；所述多个像素单元中的每个均包括显示电极；其中，所述显示电极包括至少一个电极部；每个所述电极部包括主链电极和多条支链电极，且所述多条支链电极均与所述主链电极电连接；
    黑矩阵层，设置在所述像素单元背离所述基底的一侧；所述黑矩阵层包括多个开口部和遮光部；一个所述开口部在所述基底上的正投影覆盖一个所述显示电极的支链电极在所述基底上的正投影；所述遮光部在所述基底上的正投影覆盖所述栅线、所述数据线和所述主链电极在所述基底上的正投影。
  2. 根据权利要求1所述的阵列基板，其中，每个所述显示电极中的所述电极部的数量为多个，且相邻设置的所述电极部中的主链电极位于支链电极的不同侧。
  3. 根据权利要求2所述的阵列基板，相邻设置的所述电极部中的主链电极通过连接电极电连接。
  4. 根据权利要求3所述的阵列基板，其中，所述连接电极位于相邻设置的所述电极部之间，且与所述支链电极的延伸方向相同。
  5. 根据权利要求4所述的阵列基板，其中，所述连接电极的延伸方向与所述支链电极的延伸方向平行。
  6. 根据权利要求5所述的阵列基板，其中，所述连接电极与所述主链电极的夹角大于或等于90度。
  7. 根据权利要求5所述的阵列基板，其中，所述支链电极的延伸方向与栅线之间的夹角的范围为7度至20度。
  8. 根据权利要求1所述的阵列基板，其中，所述像素单元在所述基底上呈阵列排布，所述每个像素单元包括多个亚像素，每个像素单元中各个亚像素所对应的黑矩阵层的开口形状不同，相邻像素单元的各个亚像素所对应的黑矩阵的开口的形状均不相同，具有相同所述开口形状的像素单元间隔设置。
  9. 根据权利要求1所述的阵列基板，其中，所述主链电极的宽度大于或等于2.3微米且小于或等于3微米，每个所述支链电极的宽度大于或等于1.3微米且小于或等于2.2微米。
  10. 根据权利要求1所述的阵列基板，其中，所述遮光部包括主体部和凸出部，所述一个凸出部在所述基底上的正投影覆盖所述一个所述主链电极在所述基底上的正投影，所述凸出部的宽度范围为13～25微米。
  11. 一种显示面板，其中，包括彩膜基板和阵列基板，所述阵列基板包括：
    基底；
    多条栅线、多条数据线和多个像素单元，均设置在所述基底上；所述多条栅线和多条数据线交叉设置，并限定出所述多个像素单元；所述多个像素单元中的每个均包括显示电极；其中，所述显示电极包括至少一个电极部；每个所述电极部包括主链电极和多条支链电极，且所述多条支链电极均与所述主链电极电连接；
    所述彩膜基板包括：
    黑矩阵层，设置在所述像素单元背离所述基底的一侧；所述黑矩阵层包括多个开口部和遮光部；一个所述开口部在所述基底上的正 投影覆盖一个所述显示电极的支链电极在所述基底上的正投影；所述遮光部在所述基底上的正投影覆盖所述栅线、所述数据线和所述主链电极在所述基底上的正投影。
  12. 根据权利要求11所述的显示面板，其中，每个所述显示电极中的所述电极部的数量为多个，且相邻设置的所述电极部中的主链电极位于支链电极的不同侧。
  13. 根据权利要求12所述的显示面板，相邻设置的所述电极部中的主链电极通过连接电极电连接。
  14. 根据权利要求13所述的显示面板，其中，所述连接电极位于相邻设置的所述电极部之间，且与所述支链电极的延伸方向相同。
  15. 根据权利要求14所述的显示面板，其中，所述连接电极的延伸方向与所述支链电极的延伸方向平行。
  16. 根据权利要求15所述的显示面板，其中，所述连接电极与所述主链电极的夹角大于或等于90度。
  17. 根据权利要求15所述的显示面板，其中，所述支链电极延伸方向与栅线之间的夹角的范围均为7度至20度。
  18. 根据权利要求11所述的显示面板，其中，所述像素单元在所述基底上呈阵列排布，所述每个像素单元包括多个亚像素，每个像素单元中各个亚像素所对应的黑矩阵层的开口部形状不同，相邻像素单元的各个亚像素所对应的黑矩阵层的开口部的形状均不相同，具有相同所述开口部形状的像素单元间隔设置。
  19. 根据权利要求11所述的显示面板，其中，所述主链电极的宽 度大于或等于2.3微米且小于或等于3微米，每个所述支链电极的宽度大于或等于1.3微米且小于或等于2.2微米。
  20. 根据权利要求11所述的显示面板，其中，所述遮光部包括主体部和凸出部，所述一个凸出部在所述基底上的正投影覆盖所述一个所述主链电极在所述基底上的正投影，所述凸出部的宽度范围为13～25微米。
  21. 根据权利要求11所述的显示面板，其中，还包括色阻结构，所述色阻结构设置在所述黑矩阵的开口部处。
  22. 一种显示装置，其中，所述显示装置包括如权利要求1-10中任一项所述的阵列基板，或包括如权利要求11-21中任一项所述的显示面板。
PCT/CN2022/079228 2021-06-09 2022-03-04 阵列基板、显示面板和显示装置 WO2022257511A1 (zh)

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CN113238419A (zh) * 2021-06-09 2021-08-10 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102156367A (zh) * 2010-08-04 2011-08-17 京东方科技集团股份有限公司 阵列基板、液晶面板和液晶显示器
KR20130027370A (ko) * 2011-09-07 2013-03-15 삼성디스플레이 주식회사 액정 표시 장치
CN106444171A (zh) * 2016-08-03 2017-02-22 厦门天马微电子有限公司 一种液晶显示面板及液晶显示装置
CN110928066A (zh) * 2019-11-22 2020-03-27 厦门天马微电子有限公司 显示面板和显示装置
CN111580309A (zh) * 2020-06-18 2020-08-25 京东方科技集团股份有限公司 一种阵列基板、显示面板
CN112130382A (zh) * 2020-09-30 2020-12-25 厦门天马微电子有限公司 一种显示面板及显示装置
CN113238419A (zh) * 2021-06-09 2021-08-10 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置
CN215576039U (zh) * 2021-06-09 2022-01-18 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102156367A (zh) * 2010-08-04 2011-08-17 京东方科技集团股份有限公司 阵列基板、液晶面板和液晶显示器
KR20130027370A (ko) * 2011-09-07 2013-03-15 삼성디스플레이 주식회사 액정 표시 장치
CN106444171A (zh) * 2016-08-03 2017-02-22 厦门天马微电子有限公司 一种液晶显示面板及液晶显示装置
CN110928066A (zh) * 2019-11-22 2020-03-27 厦门天马微电子有限公司 显示面板和显示装置
CN111580309A (zh) * 2020-06-18 2020-08-25 京东方科技集团股份有限公司 一种阵列基板、显示面板
CN112130382A (zh) * 2020-09-30 2020-12-25 厦门天马微电子有限公司 一种显示面板及显示装置
CN113238419A (zh) * 2021-06-09 2021-08-10 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置
CN215576039U (zh) * 2021-06-09 2022-01-18 京东方科技集团股份有限公司 阵列基板、显示面板和显示装置

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