WO2022253180A1 - 有机电致发光器件 - Google Patents

有机电致发光器件 Download PDF

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Publication number
WO2022253180A1
WO2022253180A1 PCT/CN2022/095963 CN2022095963W WO2022253180A1 WO 2022253180 A1 WO2022253180 A1 WO 2022253180A1 CN 2022095963 W CN2022095963 W CN 2022095963W WO 2022253180 A1 WO2022253180 A1 WO 2022253180A1
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Prior art keywords
short circuit
electrode layer
circuit electrode
layer
light
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PCT/CN2022/095963
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English (en)
French (fr)
Inventor
张国辉
朱映光
鲁天星
董艳波
胡永岚
谢静
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固安翌光科技有限公司
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Priority to EP22815225.2A priority Critical patent/EP4322237A1/en
Publication of WO2022253180A1 publication Critical patent/WO2022253180A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays

Definitions

  • the present disclosure relates to the technical field of organic electroluminescence, for example, relates to an organic electroluminescence device.
  • OLED screens are widely used for their ultra-thin, large-area uniformity, and excellent heat dissipation. Because the total thickness of the organic layers of OLED devices is on the order of tens to hundreds of nanometers, so The distance between OLED anode and cathode is very small, and in the process of OLED screen body preparation, defect points such as dust particles, burrs, pinholes, cracks in the surrounding environment will inevitably adhere to each layer of OLED, and the defect points will As a result, the anode and the cathode are in direct contact, and a short circuit occurs, and all the current flows through the short circuit point, generating a large amount of heat to cause the OLED screen to fail by burning, ablation, and rupture.
  • the current of adjacent pixels is concentrated to the defect position, it is easy to cause uneven light emission.
  • the present disclosure provides an organic electroluminescence device that does not affect the aperture ratio of the device and has excellent short-circuit prevention performance.
  • the application provides an organic electroluminescence device, comprising:
  • each tree-shaped transparent electrode is set corresponding to the light-emitting area of the light-emitting device, and is electrically connected to the auxiliary electrode; wherein, there is at least one light-emitting area;
  • An anti-short circuit electrode layer located on the insulating layer
  • An organic functional layer located between the anti-short circuit electrode layer and the second electrode layer.
  • FIG. 1 is a schematic structural view of preparing an auxiliary electrode layer on a substrate in Example 1 of the present application;
  • Figure 2a is a schematic top view of the preparation of auxiliary electrodes and dendritic transparent electrodes on the substrate in Example 1 of the present application;
  • Figure 2b is a schematic structural diagram of another embodiment of a dendritic transparent electrode in Example 1 of the present application.
  • Example 3 is a schematic cross-sectional structure diagram of preparing an auxiliary electrode and a dendritic transparent electrode on a substrate in Example 1 of the present application;
  • FIG. 4 is a schematic diagram of a cross-sectional structure after preparing an insulating layer in Example 1 of the present application;
  • FIG. 5 is a schematic diagram of a cross-sectional structure after preparing an anti-short circuit electrode layer in Example 1 of the present application;
  • Fig. 6 is a schematic cross-sectional structure diagram after preparing an organic functional layer and a second electrode layer in Example 1 of the present application;
  • Fig. 7 is a schematic cross-sectional structure diagram of Embodiment 2 of the present application.
  • Figure 8a is a schematic cross-sectional structure diagram of Comparative Example 1 of the present application.
  • Figure 8b is a schematic cross-sectional structure diagram of Comparative Example 2 of the present application.
  • FIG. 9 is a schematic top view of Comparative Example 3 of the present application.
  • Substrate; 20 Auxiliary electrode; 30. Dendritic transparent electrode; 30-1. Trunk part; 30-2. Branch part; 31. Connection point; 40. Insulation layer; 41. Opening area; 50. Anti-short circuit Electrode layer; 51, the first anti-short circuit electrode layer; 52, the second anti-short circuit electrode layer; 70, the second electrode layer; 80, organic functional layer; 81, micro-partition; 90, the first electrode layer; ; 120, the vertical anti-short circuit layer.
  • this embodiment provides an organic electroluminescent screen body, including:
  • a second electrode layer 70 disposed opposite to the anti-short circuit electrode layer 50;
  • An organic functional layer 80 located between the anti-short circuit electrode layer 50 and the second electrode layer 70 .
  • the light-emitting area refers to the area of the screen except the non-light-emitting part, which may be a whole continuous area, or may be composed of a plurality of micro-regions 81 as shown in FIG. 2a.
  • the tree-shaped transparent electrode 30 in this embodiment its "tree-like" means that it has a trunk part 30-1 and a branch part 30-2 protruding from the trunk part; for example, the tree as shown in Figure 2a Shaped transparent electrode 30, its main part 30-1 is electrically connected from the auxiliary electrode 20, and then goes around the area corresponding to the micro-division 81 for one and a half circles and then goes to the center of the micro-division 81, and then branches out into four branch parts 30 -2.
  • the anti-short circuit electrode layer 50 is equivalent to the first electrode of the OLED device in the related art, the difference is that this layer has specific relatively high longitudinal and lateral resistance values.
  • this layer has specific relatively high longitudinal and lateral resistance values.
  • the second electrode when the second electrode is in direct contact with the first electrode, a short circuit defect may be generated.
  • the thickness of the organic functional layer between the first electrode and the second electrode is reduced, deformed, or the like causes loss of function of the organic functional layer, a short circuit defect may also occur.
  • the leakage current will increase infinitely, the device current will leak through the short-circuit defect, and only a small part of the current of the light-emitting device may flow avoiding the defect-free region, thus reducing the luminous output of the light-emitting device, and In many cases, it may cause the light emitting device not to work.
  • current dispersedly flowing to a large area of an organic material flows concentratedly toward a short-circuit generating location, high heat is generated locally, resulting in a risk of device rupture or fire.
  • the anti-short circuit electrode layer has relatively high horizontal and vertical high resistance values, even if the vertical A short circuit occurs in the direction, and the lateral direction can also limit the current from being too large. Also due to the tree-like design of the transparent electrode layer, which has a high vertical resistance, the amount of leakage current can be controlled, so that the leakage current will not increase indefinitely, so the light emitting device can continue to work normally; for example, when When a short-circuit defect occurs, the anti-short circuit electrode layer has defect particles. At this time, the current flowing through the defect needs to continue to flow through the dendritic transparent electrode layer with high vertical resistance, thereby controlling the magnitude of the leakage current.
  • both the anti-short circuit electrode layer and the dendritic transparent electrode have a high resistance value.
  • both of them can work at the same time, or only the dendritic transparent electrode works, and both play a role by increasing the moderate resistance.
  • the ratio of the current of a single pixel or partition to the total current of the device is relatively high.
  • the requirement is very high.
  • the resistance series value that meets the aperture ratio cannot prevent short circuit. Even if it has the effect of preventing short circuit, due to the high proportion of the lost current, there will be dim spots or black spots on the entire screen; if If the fusing scheme is used, the required fusing current is also very high, which is generally difficult to achieve, so it cannot be fusing. Even if it is fusing, the proportion of the leakage current to the total current will be higher, so the brightness of the entire screen will drop significantly. Dim or dark spots may also appear.
  • the light-emitting device provided according to the embodiment of the present application, when a short-circuit defect occurs, due to the super large resistance formed in series between the anti-short circuit electrode layer and the dendritic transparent electrode layer, when the light-emitting device is a small-section type or a small-pixel type It can also easily meet the resistance resistance requirement for short-circuit prevention, so it is also very suitable for OLED devices with few partitions or small pixels.
  • the series action of the anti-short circuit electrode layer and the dendritic transparent electrode realizes a high anti-short circuit resistance value, making the technical solution of the present application suitable for screens with few partitions or small pixels.
  • the preparation process of the above-mentioned light-emitting device is as follows:
  • the auxiliary electrode 20 is photolithographically etched on the substrate 10.
  • the substrate 10 is transparent glass
  • the auxiliary electrode 20 is a metal electrode, which is in the shape of a mesh or a dendrite or a blood vessel.
  • the auxiliary electrode network is made of metal with a surface resistance of 0.01-1 ⁇ / mm2 , such as titanium aluminum titanium TiAlTi, aluminum titanium AlTi, chromium Cr, silver Ag, or molybdenum aluminum molybdenum MoALMo, etc., and high conductivity can also be selected Silver nanowires, carbon nanotubes and other materials.
  • the mesh-shaped, dendrite-shaped, or blood-vessel-shaped auxiliary electrodes can share the current evenly and improve the uniformity of light emission.
  • a dendritic transparent electrode 30 is made on the substrate 10, and a transparent material with a surface resistance of 0.5-100 ⁇ /mm 2 is used, such as ITO, aluminum-doped zinc oxide AZO, etc. to make a dendritic transparent electrode 30; the tree-shaped transparent electrode 30 is set corresponding to the light-emitting area of the light-emitting device, and most of its wiring is located in the micro-section 81; the existence of the tree-shaped transparent electrode 30 does not affect the light-emitting area and aperture ratio of the OLED; this layer can be dispersed Dendritic structure for equalizing surface current distribution.
  • a transparent material with a surface resistance of 0.5-100 ⁇ /mm 2 is used, such as ITO, aluminum-doped zinc oxide AZO, etc.
  • the trunk part 30 - 1 of this layer is connected to the auxiliary electrode, and the branch part is connected to several uniformly distributed connection points 31 , and the current can only be evenly distributed to the arranged connection points 31 through the tree-like transparent electrodes 30 .
  • the resistance from each connection point 31 to the auxiliary electrode is the same, then this layer plays the role of series resistance and average current distribution; at the same time, it does not affect the aperture ratio of the device, so that the aperture ratio of the device is close to 100%; wherein, the branch
  • the range of resistance from the end of the branch to the connection end is 500-10000 ⁇ , for example, it may be 1000-7000 ⁇ .
  • the winding method of the branch portion 30 - 2 of the tree-shaped transparent electrode 30 is a grid pattern as shown in FIG. 2 a , or a triangular connection as shown in FIG. 2 b .
  • the insulating layer 40 is covered on the auxiliary electrode network 20 and the dendritic transparent electrode 30, and the dendritic transparent electrode 30 of an appropriate area is exposed as a current wire, and the insulating layer 40 is provided with an opening area 41, as shown in FIG.
  • the dendritic transparent electrode 30 is provided with a current connection point 31 corresponding to the opening area 41, and the opening area 41 is used for overlapping the dendritic transparent electrode 30 and the subsequent anti-short circuit electrode layer 50.
  • the insulating layer 40 can be made of inorganic or organic materials, such as inorganic silicon oxide, silicon nitride and other materials.
  • an anti-short circuit electrode layer 50 is prepared on the insulating layer 40 by sputtering or evaporating an electrode layer.
  • the anti-short circuit electrode layer 50 can be designed to be connected to the whole surface, and the OLED surface electrode layer (such as the anode) can also be designed in partitions; this layer has a certain vertical and lateral resistance value, and compared with OLED materials, it has higher conductivity and has both The role of the surface resistance protective layer.
  • the anti-short circuit electrode layer can be arranged in a single layer or layered.
  • a single layer it can be made in the following manner:
  • the anti-short circuit electrode layer can be formed of a mixture of inorganic conductive materials and inorganic insulating materials. Inorganic conductive materials such as indium oxide and tin oxide materials, and inorganic insulating materials such as silicon oxide materials, after mixing the three, sputtering onto the film layer made of corresponding insulating materials to obtain the anti-short circuit electrode layer; the anti-short circuit electrode layer
  • the surface resistance value can be adjusted to a suitable value by adjusting the ratio of indium oxide, tin oxide, and silicon oxide and adjusting the thickness of the film layer.
  • the anti-short circuit electrode layer can be formed of a mixture of inorganic conductive materials and organic insulating materials.
  • the inorganic conductive material is, for example, carbon nanowires or silver nanowires
  • the organic insulating material is, for example, organic glue.
  • the inorganic conductive material and the organic insulating material form a mixed film.
  • the anti-short circuit electrode layer is directly made of organic conductive materials, such as polymer conductive materials like PEDOT.
  • PEDOT is a polymer (Poly(3,4-ethylenedioxythiophene)) of EDOT (3,4-ethylenedioxythiophene monomer).
  • the surface resistance of the anti-short circuit electrode layer described in this embodiment is 100-2500 ⁇ / ⁇ ; for example, it can be 500-2000 ⁇ / ⁇ .
  • the organic functional layer 80 and the second electrode layer 70 are evaporated.
  • the light-emitting region is divided into a plurality of micro-regions 81 , and each micro-region 81 has an area of 10000um 2 to 1000000um 2 , for example, 40000um 2 -160000um 2 .
  • each micro-region 81 has an area of 10000um 2 to 1000000um 2 , for example, 40000um 2 -160000um 2 .
  • this example size when the distance between the human eye and the light-emitting surface is greater than 30 cm, even if a single partition defect occurs, it is not obvious in appearance.
  • the shape of the light-emitting area in this embodiment is polygonal, circular or irregular.
  • the shape of the micro-region can be triangular, quadrangular or hexagonal, etc.
  • the refractive index of the anti-short circuit electrode layer is >1.5, so as to reduce the total emission from the organic functional layer to the anti-short circuit electrode layer.
  • the surface of the anti-short circuit electrode layer is provided with undulating microstructures
  • Scattering particles are doped in the anti-short circuit electrode layer.
  • All of the above methods can reduce the total reflection at the interface between the functional layer and the anti-short circuit electrode layer, so as to promote light extraction.
  • the anti-short circuit electrode layer 50 in this embodiment is arranged in layers.
  • the anti-short circuit electrode layer 50 includes The first anti-short circuit electrode layer 51, and the second anti-short circuit electrode layer 52 located on the first anti-short circuit electrode layer 51; the surface resistance range of the first anti-short circuit electrode layer 51 is 100-2500 ⁇ / ⁇ , for example It can be 500-2000 ⁇ / ⁇ .
  • the second anti-short circuit electrode layer 52 has poor lateral conductivity, and its surface resistance is >10000 ⁇ / ⁇ .
  • the second anti-short circuit electrode layer 52 is mainly used to modify the electrode surface and promote the effective injection of charges.
  • the second anti-short circuit electrode layer 52 corresponds to 1mm *The vertical resistance value of an area of 1mm is 1000-10000 ⁇ , for example, it can be 2000-3000 ⁇ .
  • the first anti-short circuit electrode layer may be the transparent anode of the screen, or the transparent cathode of the screen.
  • the first anti-short circuit electrode layer 51 has relatively good conductivity, and can distribute the current derived from the dendritic transparent electrode.
  • the first anti-short circuit electrode layer 51 can be made in the following manner:
  • the anti-short circuit electrode layer can be formed of a mixture of inorganic conductive materials and inorganic insulating materials. Inorganic conductive materials such as indium oxide and tin oxide, and inorganic insulating materials such as silicon oxide materials, after mixing the three, sputtering onto the film layer made of corresponding insulating materials to obtain the anti-short circuit electrode layer; the anti-short circuit electrode layer
  • the conductivity can be adjusted to an appropriate value by adjusting the ratio of indium oxide, tin oxide, and silicon oxide.
  • the anti-short circuit electrode layer can be formed of a mixture of inorganic conductive materials and organic insulating materials.
  • the inorganic conductive material is, for example, carbon nanowires or silver nanowires;
  • the organic insulating material is, for example, organic glue; the above-mentioned inorganic conductive materials and organic insulating materials form a mixed film.
  • the anti-short circuit electrode layer is directly made of organic conductive materials, such as polymer conductive materials like PEDOT.
  • PEDOT is a polymer of EDOT (3,4-ethylenedioxythiophene monomer).
  • the second anti-short circuit electrode layer 52 this layer has relatively large longitudinal resistance and proper work function.
  • the layered setting can better control the horizontal resistance value and the work function of the interface. Better match OLED functional layer.
  • the longitudinal resistance value of the second anti-short circuit electrode layer corresponding to an area of 1 mm is between 1000-10000 ⁇ , for example, 2000-3000 ⁇ ; the second anti-short circuit electrode layer is made of metal oxide (such as tungsten oxide, molybdenum oxide) Or organic polymers (such as high resistance PEDOT) made.
  • the anti-short circuit electrode layer 50 in this embodiment is arranged in a partitioned manner, corresponding to each light emitting region 81 .
  • the anti-short circuit layer does not cover the entire surface of the light-emitting area of the screen body, but the layer is disconnected at the edge of each light-emitting area 81 to form an independent anti-short circuit layer. This further reduces the influence of current flow between pixels, and reduces the risk of current flow from adjacent light emitting regions 81 to defective partitions. Just because the gaps between the light-emitting regions 81 are non-light-emitting regions, the aperture ratio is reduced to a certain extent.
  • the light-emitting device is provided with a substrate 10, a first electrode layer 90, an auxiliary electrode 20, an insulating layer 40, an organic functional layer 80, a second electrode layer 70, and an encapsulation layer (not shown in the figure). output); the number of samples of the light-emitting screen of the light-emitting device is 1000 pieces, and the light-emitting area of each light-emitting screen is 100mm*100mm, and it does not have a short-circuit protection structure.
  • Its first electrode layer 90 is an anode made of ITO, its auxiliary electrode 20 is a metal grid, and its organic functional layers include: a hole transport layer formed by evaporation of NPB 81nm; a light-emitting layer formed by evaporation of AND: C545T2% 30nm ; The electron transport layer formed by evaporating Alq3 20nm; the electron injection layer formed by evaporating 0.5nm LiF; the second electrode layer forms the cathode by evaporating 181nm Al, and the metal grid is removed, and the effective light-emitting area accounts for 98% of the partition area. %.
  • the difference between it and Comparative Example 1 is that 30 nm of molybdenum oxide was deposited between the first electrode layer 90 and the organic functional layer 80 as the vertical anti-short circuit layer 120 .
  • the light-emitting size of the screen is 100mm*100mm, and the number of samples taken is 1000 pieces.
  • the difference between it and Comparative Example 1 is: the luminous area is partitioned, the single micro-region 81 unit is 500um*500um, and the horizontal resistance 110 is set in each partition, about 2000 ⁇ , and the number of samples is 1000 pieces.
  • the light-emitting area of the panel is reduced to 10*10mm 2 .
  • the samples selected here correspond to 1,000,000.
  • the area of the light-emitting area on each screen is still 500um*500um, and there are 400 micro-divisions on each screen.
  • the light emitting device is provided with a substrate 10, an auxiliary electrode 20, a dendritic transparent electrode 30, an insulating layer 40, an anti-short circuit electrode layer 50, an organic functional layer 80, a second electrode layer 70 and Encapsulation layer; wherein the average line width of the dendritic transparent electrode is 10um, and the comprehensive winding resistance is 3000 ⁇ ; the insulating layer 40 is made of silicon oxide material; the light-emitting area of each light-emitting area is 100mm*100mm.
  • the anti-short circuit electrode layer is designed as a whole layer without partition design.
  • the tree-shaped transparent electrodes 30 have a distribution structure as shown in FIG. 2 a , and each branch of the transparent electrode corresponds to an area of 500 um*500 um.
  • the parameters of the organic functional layer are the same as in Comparative Example 1, except for the metal grid, the effective light-emitting area accounts for 98% of the partition area, and the number of samples is 1000.
  • the difference between this case and Experimental Example 1 is that the light-emitting area of each light-emitting area is 10mm*10mm, and the sample size is 1,000,000.
  • Example 1 The difference between this case and Experimental Example 1 is that the anti-short circuit electrode layer is divided into micro-sections of 500um*500um, and the gap width between the sections is 10um. Compared with Example 1, it is more effective The light emitting area is reduced by about 4%.
  • the anti-short circuit layer 50 is divided into two layered designs, the first anti-short circuit layer 61 and the second anti-short circuit layer 62 .
  • the surface resistance of the first anti-short circuit layer 61 is 1500 ⁇ / ⁇ ; 62 is a tungsten oxide layer, and its vertical resistance corresponding to 1mm2 is 1500 ⁇ .
  • the tree-shaped transparent electrodes 30 have a distribution structure as shown in FIG. 2 a , and each branch of the transparent electrode corresponds to an area of 500 um*500 um.
  • the ratio of point defects in the above comparison results means: the number of screens with point defects divided by the total sample size.
  • the short circuit failure of the screen is caused by a local short circuit that causes a large decrease in the brightness of the screen or partial darkening, and obvious regional defects are observed from the appearance.
  • comparative example 1 has the highest ratio of point defects and a high proportion of failures of the whole screen because no anti-short circuit structure is installed.
  • Comparative Example 3 since the lateral resistance is set, it can also partially prevent defects, and the effect is better than that of Comparative Example 2 under the same conditions.
  • the aperture ratio of this solution is relatively low, the brightness of the device is reduced, and the life of the device is relatively reduced when the device corresponds to a higher initial brightness.
  • there is a short-circuit defect although there is a current-limiting resistor, there will still be a current distribution of the short-circuit resistance area in the nearby partition, causing the pixel to become dark; due to the addition of a large-resistance fuse, the voltage will rise.
  • Comparative Example 4 On the basis of Comparative Example 3, the number of light-emitting screens was increased to 10,000, and the light-emitting area was reduced to 10*10mm 2 , so the proportion of point defects was further reduced. However, in Comparative Example 4, when short-circuit failure occurred , will cause the brightness of the screen to drop sharply, and the screen with point defects usually shows that the entire screen fails. This scheme shows that in a small-area screen, the resistance scheme is adopted, and a short circuit occurs. Although there is a resistance current limiter, because a large proportion of the current of the entire screen is lost from here, the overall current of the screen drops, so this The structure is not suitable for small-area luminous screens.
  • Experimental Example 3 adopts a cut-off large resistance anti-short-circuit design, resulting in a reduction in the effective light-emitting area, but compared with Comparative Example 3, the aperture ratio is still larger. have a better lifespan.
  • the area of the micro-luminescence area is 100um*100um-1000um*1000um, and the shape of the micro-luminescence area can be square, triangle, hexagon, circle, irregular shape, etc. Because when the area of the micro-luminescent area is too small, the lead wire of the auxiliary electrode accounts for a large proportion, and one point fails, which will lead to obvious defects. However, when the area of the micro-luminescence area is 200um*200um-400um*400um, when the eye distance from the screen is more than 30cm, even if a micro-area fails, it is not easy to observe, and the appearance of the entire screen is not obvious.
  • the lifespan T70 means the time for the brightness of the screen to decay to 70% of the initial brightness. It can be seen from the above comparative experiments that the technical solution of the present application also significantly improves the lifespan of the screen.
  • the technical solution of the present application also has a high aperture ratio under the premise of ensuring excellent anti-short circuit performance.
  • the dendritic transparent electrode corresponding to the light-emitting area of the device and the anti-short-circuit electrode layer covering the auxiliary electrode and the dendritic transparent electrode, when a short circuit occurs, the current will flow through the anti-short circuit electrode layer,
  • the dendritic transparent electrode goes to the auxiliary electrode; the anti-short circuit electrode layer and the dendritic transparent electrode play a double anti-short protection role; when there are particle defects on the anti-short circuit electrode layer or the dendritic transparent electrode, it can be The large resistance formed prevents short circuits from occurring;
  • the dendritic transparent electrode is set corresponding to the light-emitting area, it does not affect the light-emitting area and aperture ratio of the organic electroluminescent device, so the defect of large aperture ratio in the vertical resistor scheme of the related art can be completely avoided; at the same time, the dendritic transparent electrode also has The function of equalizing the current distribution can improve the uniformity of light emission of the light emitting device.

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Abstract

本申请公开了一种有机电致发光器件，包括：基板，设置在所述基板上的辅助电极；多个设置在所述基板上的树状透明电极，每个树状透明电极对应所述发光器件的发光区域设置，且与所述辅助电极电连接；其中，所述发光区域为至少一个；覆盖所述辅助电极和树状透明电极的绝缘层；每个发光区域内，所述绝缘层对应所述树状透明电极设有多个开口区；位于所述绝缘层上的防短路电极层；与所述防短路电极层相对设置的第二电极层；位于所述防短路电极层和第二电极层之间的有机功能层。

Description

有机电致发光器件
本申请要求在2021年6月1日提交中国专利局、申请号为202110607640.9的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。
技术领域
本公开涉及有机电致发光技术领域，例如涉及一种有机电致发光器件。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)屏体以超薄、大面积均匀性高、散热性优等特点被广泛使用，因为OLED器件的有机层总厚度在数十到数百纳米级别，所以OLED阳极和阴极之间的距离特别小，而在OLED屏体制备过程中，周围环境中灰尘颗粒、毛刺、针孔、裂纹等缺陷点都不可避免地会附着在OLED各层中，缺陷点会导致阳极和阴极直接接触，发生短路，所有的电流都流经短路点，产生大量的热量以燃烧、烧蚀、破裂的方式导致OLED屏体失效。
相关技术中的防短路技术，主要有三种方式：
1、面电阻方案：通过在氧化铟锡(Indium tin oxide，ITO)电极上蒸镀整面氧化物电阻层，由于氧化物电阻层的厚度远远小于颗粒高度，该方案蒸镀或溅射氧化物前，ITO表面上已存在颗粒，或者在蒸镀氧化物过程中，产生的颗粒，则无法防止短路情况的发生，因此依然存在一定概率的短路风险。
2、串联电阻方案：通过将发光区域分切为并联的微小发光区，并在每个微小发光区边缘设置串联电阻的方案。当像素完全短路时，则需要串联电阻比较大。该设计一方面电阻占据了发光面积，降低了发光区的开口率，另一方面该方案仅适用于面积较大，分区较多的屏体。例如：100*100mm 2的发光面积，分为10000个1mm*1mm微分区，每个分区串联2000Ω电阻，整体驱动电压3.5V，整体驱动电流500mA。当其中一个像素出现短路时，通过该像素的最大电流为3.5V/2000Ω为1.75mA，相对整个屏体，1.75mA/500mA＝0.35％，仅0.35％的电流从该像素流走，屏体整体亮度不影响。但当整体发光区面积比较小时，如10*10mm 2，对应分为100个1mm*1mm的分区，驱动电压及电流对应为3.5V，5mA。其中一个分区出现短路，则损失的电流比例为1.75mA/5mA＝35％，则屏体亮度将下降35％左右，无法起到良好的防短路效果。同时由于相邻像素电流向该缺陷位置集中，容易造成发光不均匀。
3、熔断方案：
1)需要有大的电流才能熔断该保险丝，再没有达到该熔断电流前，该缺陷像素漏掉了很多电流，造成发光不均匀。
2)适用于总体发光面积大的光源，对于整体面积小的光源不适用。
3)熔断过程，容易释放大量热，易造成屏体整体失效。
4)熔断后，较大区域不发光，即使是1um 2、2um 2造成的缺陷，实际仍表现为较大面积缺陷。
发明内容
本公开提供一种不影响器件开口率且防短路性能优异的有机电致发光器件。
本申请提供一种有机电致发光器件，包括：
基板，
设置在所述基板上的辅助电极；
多个设置在所述基板上的树状透明电极，每个树状透明电极对应所述发光器件的发光区域设置，且与所述辅助电极电连接；其中，所述发光区域为至少一个；
覆盖所述辅助电极和树状透明电极的绝缘层；每个发光区域内，所述绝缘层对应所述树状透明电极设有多个开口区；
位于所述绝缘层上的防短路电极层；
与所述防短路电极层相对设置的第二电极层；
位于所述防短路电极层和第二电极层之间的有机功能层。
附图说明
图1为在本申请实施例1中在基板上制备辅助电极层的结构示意图；
图2a为在本申请实施例1中在基板上制备辅助电极和树状透明电极的俯视结构示意图；
图2b为在本申请实施例1中树状透明电极的另一种实施方式的结构示意图；
图3为在本申请实施例1中在基板上制备辅助电极和树状透明电极的剖面结构示意图；
图4为在本申请实施例1中在制备绝缘层后的剖面结构示意图；
图5为在本申请实施例1中在制备防短路电极层后的剖面结构示意图；
图6为在本申请实施例1中在制备有机功能层和第二电极层后的剖面结构示意图；
图7为在本申请实施例2的剖面结构示意图；
图8a为本申请对比例1的剖面结构示意图；
图8b为本申请对比例2的剖面结构示意图；
图9为本申请对比例3的俯视结构示意图。
图中标号：
10、基板；20、辅助电极；30、树状透明电极；30-1、主干部分；30-2、支干部分；31、连接点；40、绝缘层；41、开口区；50、防短路电极层；51、第一防短路电极层；52、第二防短路电极层；70、第二电极层；80、有机功能层；81、微分区；90、第一电极层；110、横向电阻；120、纵置防短路层。
具体实施方式
下面结合附图和实施例对本申请作进一步的详细说明。可以理解的是，此处所描述的具体实施例仅仅用于解释相关公开，而非对该公开的限定。另外还需要说明的是，为了便于描述，附图中仅示出了与公开相关的部分。
需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本申请。
实施例1
请参考图1-6，本实施例提供一种有机电致发光屏体，包括：
基板10；
设置在所述基板10上的辅助电极20；
多个设置在所述基板10上的树状透明电极30，所述树状透明电极30对应所述发光器件的发光区域设置，且与所述辅助电极20电连接；
覆盖所述辅助电极20和树状透明电极30的绝缘层40；每个发光区域内，所述绝缘层40对应所述树状透明电极30设有多个开口区41；
位于所述绝缘层40上的防短路电极层50；
与所述防短路电极层50相对设置的第二电极层70；
位于所述防短路电极层50和第二电极层70之间的有机功能层80。
其中，发光区域指的是屏体的除去非发光部分的区域，其可以是一个整体连续的区域，也可以如图2a所示，由多个微分区81组成。
其中，本实施例中的树状透明电极30，其“树状”指的是其具有主干部分30-1和从主干部分伸出的支干部分30-2；例如如图2a所示的树状透明电极30，其主干部分30-1从辅助电极20上电连接后在微分区81对应的区域内先绕一圈半后行至微分区81的中心，继而分支出4个支干部分30-2。
其中，防短路电极层50相当于相关技术中OLED器件的第一电极，不同的是该层具有特定的相对较高的纵向及横向电阻值。在相关技术中，当第二电极与第一电极直接接触时，可能会产生短路缺陷。或者，当位于第一电极与第二电极之间的有机功能层的厚度变小、变形或者类似异常导致有机功能层的功能 丧失，也可能会产生短路缺陷。当产生短路缺陷时，漏电流将无限地增加，器件电流将通过该短路缺陷泄露，该发光器件只有少部分电流可能会避开无缺陷区域而流动，如此，会降低发光器件的发光输出，并且在很多情况下，可能会导致该发光器件不工作。此外，当分散地流到大面积的有机材料的电流集中地流向短路产生位置时，局部产生高热量，导致装置破裂或者着火风险。
然而，根据本申请实施例提供的发光器件中，当产生短路缺陷时，即当第二电极与防短路电极层接触时，由于防短路电极层具有相对高的横向及纵向高阻值，即使垂直方向发生短路，横向还可以限制该电流不会过大。还由于透明电极层的树状设计，其具有高的纵向阻值，均可以控制漏电流的量，从而使漏电流不会无限地增加，因此，发光器件还可继续正常工作；又例如，当产生短路缺陷时，防短路电极层具有缺陷颗粒点，此时流经该缺陷的电流由于还需要继续流经高纵向阻值的树状透明电极层，由此可以控制漏电流的大小。
例如，防短路电极层和树状透明电极均具有高阻值，在产生短路缺陷时，二者可以同时起作用，或者只有树状透明电极起作用，均起到通过增加适度的电阻来起到防止电流从短路缺陷区逸出的作用。
当发光器件为少分区型或者小像素型的时候，单像素或分区的电流与器件的总电流的占比比较高，在产生短路缺陷时，如采用纵置电阻的方案，单个像素串联的电阻需要很高，一般满足开口率的电阻串联数值无法起到防短路的作用，即使起到了防短路的作用，由于流失的电流占比很高，导致整个屏体出现微暗点或黑点；如果采用熔断方案，则需要的熔断电流也非常高，一般很难达到，因此也无法熔断，即使熔断了，漏电的电流与总电流的占比会更高，因此整个屏体的亮度会显著下降，也会出现微暗点或黑点。
然而，根据本申请实施例提供的发光器件中，当产生短路缺陷时，由于防短路电极层与树状透明电极层之间串联形成了超大阻值，在发光器件为少分区型或者小像素型的时候，也可轻松达到防短路的电阻阻值要求，因此对于少分区型或者小像素型的OLED器件也具有很好的适用性。
例如，防短路电极层和树状透明电极的串联作用，实现了高防短路阻值，使得本申请的技术方案适用于少分区型或者小像素型屏体。
例如，上述发光器件的制备过程如下：
如图1所示，在基板10上光刻辅助电极20，在本实施例中，基板10是透明玻璃，辅助电极20为金属电极，其为网状或者树枝状或者血管状。辅助电极网采用表面电阻在0.01-1Ω/mm 2之间的金属制成，金属例如为钛铝钛TiAlTi、铝钛AlTi、铬Cr、银Ag，或者钼铝钼MoALMo等，也可以选择高导电的纳米银线，碳纳米管等材料。本申请中网状或者树枝状或者血管状的辅助电极分布可以起到均分电流的作用，提高发光均匀度。
如图2a和图3所示，在基板10上制作树状透明电极30，采用表面电阻为0.5-100Ω/mm 2的透明材料，例如ITO、铝掺杂的氧化锌AZO等制作树状透明电极30；树状透明电极30对应发光器件的发光区域设置，其布线绝大部分位于微分区81内；树状透明电极30的存在，并不影响OLED发光面积及开口率；该层可以为分散的树枝结构，用于均衡面电流分布。该层主干部分30-1连接辅助电极，支干部分则连接了几个均匀分布的连接点31，电流只能通过该树状透明电极30均匀的分配到排布好的连接点31上。且每个连接点31到辅助电极的电阻是相同的，则该层起到了串联电阻及平均分配电流的作用；同时不影响器件的开口率，使得器件的开口率接近100％；其中，支干部分的端部到所述连接端的电阻阻值范围为500-10000Ω，例如可以为1000-7000Ω。
树状透明电极30的支干部分30-2的绕线方式如图2a所示的方格型，也可以是如图2b所示的三角形连线。
如图4所示，在辅助电极网20、树状透明电极30上覆盖绝缘层40，并露出适当面积的树状透明电极30，作为电流导线，绝缘层40上设有开口区41，如图2a和2b所示，树状透明电极30上设有电流连接点31，对应开口区41设置，开口区41用于树状透明电极30与后续防短路电极层50的搭接。绝缘层40材质可以为无机或有机材料，例如可以为无机氧化硅、氮化硅等材料。
如图5所示，在绝缘层40上采用溅射或蒸镀电极层方式，制备防短路电极层50。防短路电极层50可以为整面连通设计，也可以分区设计OLED面电极层(例如阳极)；该层具有一定纵置及横向电阻值，同时相比OLED材料，具有较高导电性，兼有面电阻保护层的作用。
其中所述防短路电极层可以单层设置，也可以分层设置，单层设置的时候，其可以选择以下方式制成：
1、防短路电极层可以为无机导电材料与无机绝缘材料的混合物形成。无机导电材料例如氧化铟、氧化锡材料，无机绝缘材料例如为氧化硅材料，将三者混合后，溅射到对应的绝缘材料制成的膜层上，得到防短路电极层；防短路电极层的表面电阻值可以通过调整氧化铟、氧化锡、氧化硅这三者比例及调整膜层厚度达到合适值。
2、防短路电极层可以为无机导电材料与有机绝缘材料的混合物形成。无机导电材料例如为碳纳米线或者银纳米线，有机绝缘材料例如为有机胶，上述无机导电材料与有机绝缘材料形成混合膜。
3、防短路电极层直接选用有机导电材料制成，有机导电材料例如为PEDOT类似的聚合物导电材料。PEDOT是EDOT(3，4-乙烯二氧噻吩单体)的聚合物(Poly(3，4-ethylenedioxythiophene))。
其中，本实施例中所述防短路电极层的表面电阻在100-2500Ω/□；例如可 以为500-2000Ω/□。
如图6所示，最后蒸镀有机功能层80和第二电极层70。
其中，本实施例的发光器件，发光区域分割成多个微分区81，每个微分区81的面积为10000um 2到1000000um 2，例如可以为40000um 2-160000um 2。该示例尺寸当人眼与发光面距离大于30cm时，即使出现单个分区缺陷，外观上观察也不明显。
其中，本实施例中所述发光区域的形状为多边形、圆形或非规则图形。微分区的形状可以是三角形、四边形或者六边形等等。
其中，本实施例中，所述防短路电极层的折射率＞1.5，以减少有机功能层到防短路电极层的全发射。
在其他实施例中，也可以选择或者同时采用以下方式：
所述防短路电极层的表面设有起伏的微结构；
所述防短路电极层内掺杂有散射粒子。
上述方式均可以减少功能层到防短路电极层界面的全反射，以促进光提取。
实施例2
在实施例1的基础上，如图7所示，本实施例中的防短路电极层50采用分层设置的方式，此时所述防短路电极层50包括与所述绝缘层40相邻的第一防短路电极层51，及位于所述第一防短路电极层51上的第二防短路电极层52；所述第一防短路电极层51的表面电阻范围为100-2500Ω/□，例如可以为500-2000Ω/□。所述第二防短路电极层52横向导电性差，表面电阻＞10000Ω/□，第二防短路电极层52主要用于修饰电极表面，促进电荷有效注入的作用，第二防短路电极层52对应1mm*1mm大小面积的纵向电阻值1000-10000Ω，例如可以为2000-3000Ω。
第一防短路电极层，可以是屏体的透明阳极，也可以是屏体的透明阴极。
第一防短路电极层51具有相对较好的导电性，可以分布树状透明电极上导出的电流。
第一防短路电极层51可以选择以下方式制成：
1、防短路电极层可以为无机导电材料与无机绝缘材料的混合物形成。无机导电材料例如为氧化铟、氧化锡，无机绝缘材料例如为氧化硅材料，将三者混合后，溅射到对应的绝缘材料制成的膜层上，得到防短路电极层；防短路电极层的导电率可以通过调整氧化铟、氧化锡、氧化硅这三者比例达到合适值。
2、防短路电极层可以为无机导电材料与有机绝缘材料的混合物形成。无机导电材料例如为碳纳米线或者银纳米线；有机绝缘材料例如为有机胶；上述无机导电材料与有机绝缘材料形成混合膜。
3、防短路电极层直接选用有机导电材料制成，有机导电材料例如为PEDOT 类似的聚合物导电材料。PEDOT是EDOT(3，4-乙烯二氧噻吩单体)的聚合物。
第二防短路电极层52，该层具有较大的纵向电阻，并具有合适的功函数。
分层设置可以更好的调控横向的电阻值，及界面的功函数。更好的匹配OLED功能层。所述第二防短路电极层对应1mm 2面积的纵向电阻值在1000-10000Ω之间，例如可以为2000-3000Ω；所述第二防短路电极层由金属氧化物(如氧化钨、氧化钼)或有机聚合物(如高电阻PEDOT)制成。
实施例3
在实施例1的基础上，本实施例中的防短路电极层50采用分区设置的方式，对应每个发光区域81设置。
在本实施例中，防短路层不是覆盖整个屏体发光区的整面，而是在每个发光区域81的边缘，将该层断开，形成独立的防短路层。这样进一步降低了像素间电流串流的影响，降低相邻发光区域81电流向缺陷分区流动的风险。只是因为发光区域81间的间隙为非发光区，一定程度上，降低了开口率。
以下为对比实验：
对比例1：
如图8a所示，本对比例中，发光器件设有基板10、第一电极层90、辅助电极20、绝缘层40、有机功能层80、第二电极层70及封装层(图中未示出)；该发光器件的发光屏体的样本数量为1000片，每片发光屏体的发光面积为100mm*100mm，其不设防短路结构。
其第一电极层90为ITO制备的阳极，其辅助电极20为金属网格，其有机功能层依次包括：蒸镀NPB 81nm形成的空穴传输层；蒸镀AND：C545T2％30nm形成的发光层；蒸镀Alq3 20nm形成的电子传输层；蒸镀0.5nm的LiF形成的电子注入层；其第二电极层通过蒸镀181nm的Al形成阴极，刨除金属网格，有效发光面积占分区面积的98％。
对比例2
如图8b所示，其和对比例1的区别为在第一电极层90与有机功能层80之间蒸镀30nm氧化钼作为纵置防短路层120。屏体发光尺寸为100mm*100mm，所取样本数量为1000片。
对比例3
如图9所示，其和对比例1的区别为：对发光区域做分区设计，单个微分区81单元为500um*500um，且在每个分区设置横向电阻110，约2000Ω，样本数量1000片。
对比例4
器件结构与对比例3相比，屏体发光面积缩小为10*10mm 2。为了统计相同面积的发光缺陷比例，此处选取的样本为对应为1000000个。每个屏体上的发 光区域面积仍然为500um*500um，每个屏体上微分区400个。
实验实施例1：
本案例采用实施例1的器件结构，也即发光器件设有基板10、辅助电极20、树状透明电极30、绝缘层40、防短路电极层50、有机功能层80、第二电极层70及封装层；其中树状透明电极的平均线宽为10um，绕线综合电阻为3000Ω；绝缘层40采用氧化硅材料制成；每片发光区域的发光面积为100mm*100mm。
防短路电极层为整层设计，未进行分区设计。
本案例中，树状透明电极30为图2a所示分布结构，每个透明电极分支对应区域面积为500um*500um。
其有机功能层的参数同对比例1，刨除金属网格，有效发光面积占分区面积的98％，样本数量1000个。
实验实施例2：
本案例同实验实施例1的区别为：每片发光区域的发光面积为10mm*10mm，样本量1000000个。
实验实施例3：
本案例同实验实施例1的区别为：对防短路电极层按每个500um*500um的微分区做了切分设计，其中分区与分区间的空隙宽度为10um，则相比实施例1，有效发光面积减少了4％左右。
实验实施例4：
本案例同实验实施例1的区别为：但对防短路层50分为了第一防短路层61与第二防短路层62两层分层设计。第一防短路层61层对应表面电阻为1500Ω/□；62采用氧化钨层，其对应1mm2的垂直电阻为1500Ω。本案例中，树状透明电极30为图2a所示的分布结构，每个透明电极分支对应区域面积为500um*500um。
以下为多个器件参数的对比图：
Figure PCTCN2022095963-appb-000001
Figure PCTCN2022095963-appb-000002
以下为多个器件性能表现如下：
Figure PCTCN2022095963-appb-000003
上述对比结果中点缺陷比例的含义为：出现点缺陷屏体数量除以总样本量。屏体短路失效，为局部短路引起屏体亮度大幅下降或局部变暗，从外观上观察到明显的区域缺陷。
从点缺陷比例的对比可以看出，对比例1由于没有设置防短路结构，其点缺陷比例最高，且整屏失效比例高。
对比例2由于设置了纵置防短路层，可以部分程度上起到防止缺陷的作用，但是由于该层比较薄，在蒸镀前就存在的颗粒缺陷不能有效覆盖，也存在一定比例整屏失效。
对比例3由于设置了横向电阻，其也可以部分程度上起到防止缺陷的作用，在相同条件下，其效果比对比例2更好一些。但该方案开口率比较低，器件的亮度降低，器件对应更高的初始亮度下，寿命相比下降。并且如果出现一个短路缺陷，虽然有限制电流的电阻存在，但还是会有附近分区的电流分配该短路电阻区，造成像素变暗；由于加入了大电阻的保险丝，所以会造成电压上升。
对比例4在对比例3的基础上，将发光屏体的数量增加为10000个，发光面积缩小为10*10mm 2，因此其点缺陷比例进一步降低，但是在对比例4中，出现短路失效时，会造成屏体亮度大幅下降，点缺陷屏体多表现为整屏失效。该方案说明，在小面积屏体中，采用电阻方案，出现短路情况，虽然有电阻限流存在，但因为整屏较大比例的电流从此处无效的流失，造成屏体整体电流下降，所以该结构不适用于小面积发光屏体。
而实验实施例1和实验实施例2，由于设有防短路电极层和树状透明电极，其点缺陷比例比上述任何一种对比例都更优异。特别是如实验实施例2所示，本申请的技术方案应用在独立发光区域面积较小的屏体的时候，其点缺陷率明显降低，且不存在因为电流损失导致的整屏亮度大幅下降情况，这说明本申请的结构即使应用于小数量的发光区域屏体的时候，其也具有比现单纯串联电阻屏体更好的防短路效果。
实验实施例3采用了分切的大电阻防短路设计，造成有效发光面积减少，但相比对比例3，开口率仍然较大。相比有较好的寿命。
实验实施例4，对大电阻层采用了分层设计，第二层氧化钨有效促进了电荷注入，降低了屏体工作电压。
因此，在本实申请的技术方案中，微发光区域的面积为100um*100um-1000um*1000um，微发光区域的形状可以为方形，三角形、六边形、圆形，不规则形状等。因为微发光区域的面积太小的时候，辅助电极的引线占比大，一个点失效，会导致缺陷明显。而当微发光区域的面积在200um*200um-400um*400um时，在眼睛距离屏体在30cm以上时，即使出现一个微分区失效，也不易观察到，整屏外观缺陷不明显。
另外，综合上述对比实验的效果还可以看出：
1、寿命T70表示屏体亮度衰减到初始亮度的70％的时间，从上述对比实验可以看出，本申请的技术方案也显著提高了屏体的使用寿命。
2、本申请的技术方案在保证优异的防短路性能的前提下还具有很高的开口率。
本申请的上述技术方案，通过设置与器件的发光区域对应的树状透明电极以及，覆盖辅助电极和树状透明电极的防短路电极层，当发生短路时，电流会流经防短路电极层、树状透明电极后到辅助电极；防短路电极层和树状透明电 极起到了双重防短路防护的作用；当防短路电极层或者树状透明电极上存在颗粒缺陷的时候，可以通过树状透明电极形成的大电阻防止短路发生；
由于树状透明电极对应发光区域设置，不影响有机电致发光器件的发光面积和开口率，因此可以完好地避免相关技术的纵置电阻方案中开口率大的缺陷；同时树状透明电极还具有均衡电流分布的作用，可以提高发光器件的发光均匀性。

Claims (14)

  1. 一种有机电致发光器件，包括：
    基板，
    设置在所述基板上的辅助电极；
    多个设置在所述基板上的树状透明电极，每个树状透明电极对应所述发光器件的发光区域设置，且与所述辅助电极电连接；其中，所述发光区域为至少一个；
    覆盖所述辅助电极和树状透明电极的绝缘层；每个发光区域内，所述绝缘层对应所述树状透明电极设有多个开口区；
    位于所述绝缘层上的防短路电极层；
    与所述防短路电极层相对设置的第二电极层；
    位于所述防短路电极层和第二电极层之间的有机功能层。
  2. 根据权利要求1所述的有机电致发光器件，其中，所述防短路电极层由无机导电材料与绝缘材料的混合物形成，或由有机导电材料制成，所述防短路电极层的表面电阻范围为100-2500Ω/□。
  3. 根据权利要求2所述的有机电致发光器件，其中，所述防短路电极层的表面电阻范围为500-2000Ω/□。
  4. 根据权利要求2或3所述的有机电致发光器件，其中，所述防短路电极层包括与所述绝缘层相邻的第一防短路电极层及位于所述第一防短路电极层上的第二防短路电极层；所述第一防短路电极层的表面电阻范围为100-2500Ω/□；其对应1mm*1mm大小面积的纵向电阻值范围为1000-10000Ω。
  5. 根据权利要求4所述的有机电致发光器件，其中，所述第一防短路电极层的表面电阻范围为500-2000Ω/□；其对应1mm*1mm大小面积的纵向电阻值范围为2000-3000Ω。
  6. 根据权利要求4或5所述的有机电致发光器件，其中，所述第一防短路电极层由无机导电材料与绝缘材料的混合物形成，或由有机导电材料制成，所述第二防短路电极层由金属氧化物或有机聚合物制成。
  7. 根据权利要求1-6任意一项所述的有机电致发光器件，其中，所述树状透明电极包括主干部分和从所述主干部分分出的支干部分；所述主干部分具有与所述辅助电极连接的连接端；所述支干部分的端部到所述连接端的电阻阻值范围为500-10000Ω。
  8. 根据权利要求7所述的有机电致发光器件，其中，所述支干部分的端部到所述连接端的电阻阻值范围为1000-7000Ω。
  9. 根据权利要7所述的有机电致发光器件，其中，所述发光区域由多个微分区组成，每个微分区的面积为10000um 2到1000000um 2。
  10. 根据权利要求9所述的有机电致发光器件，其中，所述每个微分区的 面积为40000um 2-160000um 2。
  11. 根据权利要求9或10所述的有机电致发光器件，其中，所述防短路电极层对应所述每个微分区设置。
  12. 根据权利要求11所述的有机电致发光器件，其中，所述发光区域的形状为多边形、圆形或非规则图形；所述每个微分区为四边形、三角形或六边形。
  13. 根据权利要求1-6任意一项所述的有机电致发光器件，其中，所述防短路电极层满足以下至少之一的条件：
    所述防短路电极层的折射率＞1.5；
    所述防短路电极层的表面设有起伏的微结构；以及
    所述防短路电极层内掺杂有散射粒子。
  14. 根据权利要求1-6任意一项所述的有机电致发光器件，其中，所述辅助电极层的材质为以下至少之一：TiAlTi、ALTi、Cr、Ag，以及MoALMo。
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