WO2022252249A1 - 发光器件、显示面板及其制备方法 - Google Patents

发光器件、显示面板及其制备方法 Download PDF

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Publication number
WO2022252249A1
WO2022252249A1 PCT/CN2021/098778 CN2021098778W WO2022252249A1 WO 2022252249 A1 WO2022252249 A1 WO 2022252249A1 CN 2021098778 W CN2021098778 W CN 2021098778W WO 2022252249 A1 WO2022252249 A1 WO 2022252249A1
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Prior art keywords
electrode
pole
emitting device
light emitting
display panel
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PCT/CN2021/098778
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English (en)
French (fr)
Inventor
何昆鹏
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US17/435,153 priority Critical patent/US12002791B2/en
Publication of WO2022252249A1 publication Critical patent/WO2022252249A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

Definitions

  • the present application relates to the technical field of display panels, in particular to a light emitting device, a display panel and a preparation method thereof.
  • Micro LED and Mini LED are superior to existing OLED and LCD display devices in terms of display brightness, color gamut, afterimage, power consumption, and lifespan.
  • the current technical bottleneck of mass production lies in the mass transfer process.
  • the existing technology It is impossible to install a large number of light-emitting devices on the corresponding positions of the driver board (including the first substrate and TFT devices) within a small takt time.
  • the existing display panel has the technical problem that alignment of mass transfer light-emitting devices is difficult.
  • Embodiments of the present application provide a light-emitting device and a method for manufacturing a display panel, which can alleviate the technical problem of difficult alignment of mass-transferred light-emitting devices in existing display panels.
  • the application provides a light emitting device, comprising:
  • the P-type contact layer is further provided with a first electrode and a second electrode arranged around the first electrode.
  • a PN insulating layer is further disposed between the first electrode and the second electrode.
  • the first electrode is an N pole, and the second electrode is a P pole; or, the first electrode is a P pole, and the second electrode is an N pole .
  • the second electrode is arranged around the first electrode, and the distance from any point on the second electrode to the central point of the first electrode is equal.
  • the width of the first electrode is greater than or equal to the width of the second electrode at any position.
  • a first encapsulation layer is further disposed on a surface of the second electrode away from the first electrode, and the first encapsulation layer is disposed around the second electrode.
  • the first electrode is a cylindrical structure
  • the second electrode is a circular ring structure
  • the preparation material of the P-type contact layer includes gallium nitride.
  • the preparation material of the N-type contact layer includes gallium nitride.
  • the application provides a display panel, including:
  • the TFT device including a source and a ground terminal
  • the light emitting device disposed on the second substrate, the light emitting device comprising a first electrode, and a second electrode disposed around the first electrode;
  • the first electrode when the first electrode is a P pole, the first electrode is arranged in abutment with the source, and the second electrode is abutted with the ground terminal, or when the first electrode is an N pole In the case of poles, the first electrode is arranged in contact with the ground terminal, and the second electrode is arranged in contact with the source electrode.
  • the first electrode is an N pole, and the second electrode is a P pole; or, the first electrode is a P pole, and the second electrode is an N pole .
  • the second electrode is arranged around the first electrode, and the distance from any point on the second electrode to the central point of the first electrode is equal.
  • the width of the first electrode is greater than or equal to the width of the second electrode.
  • the first electrode is an N pole
  • the first electrode is arranged in contact with the ground terminal
  • the second electrode is arranged in contact with the source electrode.
  • the second electrode is an N pole
  • the second electrode is arranged in contact with the ground terminal
  • the first electrode is arranged in contact with the source electrode.
  • a black matrix layer is also provided above the TFT device.
  • a second encapsulation layer is further disposed above the black matrix layer and the light emitting device.
  • the present application provides a method for preparing a display panel, including:
  • a light emitting device includes a first electrode, and a second electrode arranged around the first electrode, the second electrode is arranged symmetrically with respect to the first electrode;
  • the light-emitting device is transferred to the second substrate, so that the P pole is in contact with the source, and the N pole is in contact with the ground terminal.
  • the step of transferring the light-emitting device to the second substrate further includes: when the first electrode of the provided light-emitting device is a P pole and the second electrode is an N pole, the The second electrode is aligned and abutted against the ground terminal.
  • the step of transferring the light-emitting device to the second substrate further includes: when the first electrode of the provided light-emitting device is an N pole and the second electrode is a P pole, the The second electrode is arranged in alignment with the source electrode.
  • the light-emitting device provided in the embodiment of the present application includes a first substrate, an N-type contact layer disposed on the first substrate, an active layer disposed on the N-type contact layer, and an active layer disposed on the active layer.
  • the P-type contact layer on the P-type contact layer wherein the P-type contact layer is also provided with a first electrode and a second electrode arranged around the first electrode; by arranging the second electrode around the first electrode, and the second electrode Any point on the second electrode is equidistant from the center point of the first electrode, and any point on the second electrode is aligned with the corresponding electrode of the TFT device to complete the transfer of the mini LED, reducing the size of the light emitting device.
  • the difficulty of mass transfer process is also provided with a first electrode and a second electrode arranged around the first electrode; by arranging the second electrode around the first electrode, and the second electrode Any point on the second electrode is equidistant from the center point of the first electrode, and any point on the second electrode is aligne
  • Fig. 1 is a schematic cross-sectional view of the first type of light-emitting device provided by the embodiment of the present application;
  • Fig. 2 is a second schematic cross-sectional view of the light emitting device provided by the embodiment of the present application.
  • Fig. 3 is a schematic top view of a light emitting device provided by an embodiment of the present application.
  • FIG. 4 is a flow chart of a method for manufacturing a display panel provided in an embodiment of the present application.
  • FIG. 5 is a schematic cross-sectional view of a first type of display panel provided by an embodiment of the present application.
  • FIG. 6 is a second schematic cross-sectional view of a display panel provided by an embodiment of the present application.
  • Embodiments of the present application provide a light emitting device, a display panel and a manufacturing method thereof. Each will be described in detail below. It should be noted that the description sequence of the following embodiments is not intended to limit the preferred sequence of the embodiments.
  • the light emitting device 1 includes the first substrate 10, the N-type contact layer 20 disposed on the first substrate 10, and the The active layer 30 on the N-type contact layer 20, the P-type contact layer 40 arranged on the active layer 30, wherein, the P-type contact layer 40 is also provided with the first An electrode 50 , and the second electrode 60 arranged around the first electrode 50 .
  • the light emitting device 1 includes the first substrate 10, the N-type contact layer 20 disposed on the first substrate 10, the N-type contact layer 20 disposed on the The active layer 30, the P-type contact layer 40 disposed on the active layer 30, wherein the first electrode 50 is also disposed on the P-type contact layer 40, and surrounding the first The second electrode 60 provided by the electrode 50; by setting the second electrode 60 around the first electrode 50, and any point on the second electrode 60 to the center point of the first electrode 50 ( (not marked in the figure) equidistant positions, any point on the second electrode 60 is abutted and aligned with the corresponding electrode of the TFT device (not marked in the figure), and the transfer of the miniLED can be completed, reducing the light emitting device 1 The difficulty of mass transfer process.
  • the first electrode 50 when the first electrode 50 is a P pole and the second electrode 60 is an N pole, the second electrode 60 and the ground terminal of the TFT device (not marked in the figure) 1053 abutting alignment; the first electrode 50 is connected to the P-type contact layer 40 through a via hole, and the second electrode 60 is connected to the N-type contact layer 20 through a via hole.
  • the first electrode 50 when the first electrode 50 is an N pole and the second electrode 60 is a P pole, the second electrode 60 and the source of the TFT device (not marked in the figure) 1051 abutting alignment; the first electrode 50 is connected to the N-type contact layer 20 through a via hole, and the second electrode 60 is connected to the P-type contact layer 40 through a via hole.
  • the PN insulating layer 70 is further disposed between the first electrode 50 and the second electrode 60 .
  • the light-emitting device 1 further includes the PN insulating layer 70 , and the PN insulating layer 70 is disposed around and attached to the second electrode 60 layer.
  • the first electrode 50 is a cylindrical structure
  • the second electrode 60 is an annular structure.
  • the first electrode 50 is a P pole
  • the second electrode 60 is an N pole.
  • the first electrode 50 is an N pole
  • the second electrode 60 is a P pole
  • the second electrode 60 is arranged around the first electrode 50 , and the distance from any point on the second electrode 60 to the central point of the first electrode 50 is equal.
  • the width of the first electrode 50 is greater than or equal to the width of any one of the second electrodes 60 .
  • the first encapsulation layer 80 is further provided on the surface of the second electrode 60 away from the first electrode 50 , and the first encapsulation layer 80 is arranged around the second electrode 60 .
  • the preparation material of the P-type contact layer 40 includes gallium nitride, and/or the preparation material of the N-type contact layer 20 includes gallium nitride.
  • the preparation method of the display panel 2 provided by the present application includes:
  • S3 provide the light emitting device 1, the light emitting device 1 includes the first electrode 50, and the second electrode 60 arranged around the first electrode 50, the second electrode 60 is about the first electrode 50
  • the electrodes 50 are arranged symmetrically;
  • the step of transferring the light emitting device 1 to the second substrate 101 further includes: providing that the first electrode 50 of the light emitting device 1 is a P pole and the second electrode 60 is For the N pole, the second electrode 60 is aligned and abutted against the ground terminal 1053 .
  • the N pole when the second electrode of the light-emitting device is an N pole, the N pole needs to be arranged in contact with the ground terminal, so it is only necessary to align and connect any point on the N pole to the ground terminal, and there is no need to distinguish
  • the transfer of the light-emitting device can be realized only by abutting and aligning the outer N pole and the ground terminal.
  • the step of transferring the light emitting device 1 to the second substrate 101 further includes: providing that the first electrode 50 of the light emitting device 1 is an N pole and the second electrode 60 is For the P pole, the second electrode 60 is aligned and abutted against the source electrode 1051 .
  • the P pole when the second electrode of the light-emitting device is a P pole, the P pole needs to be placed in contact with the source, so it is only necessary to align and connect any point on the P pole to the source, and there is no need to distinguish For the front and back directions of the light-emitting device, it is only necessary to align the outer P pole with the source to realize the transfer of the light-emitting device.
  • the display panel 2 provided by the present application includes a second substrate 101, a TFT device (not marked in the figure) disposed on the second substrate 101, and a TFT device disposed on the second substrate 101.
  • the light emitting device 1 on 101, the TFT device (not marked in the figure) includes the source 1051, and the ground terminal 1053, the light emitting device 1 includes the first electrode 50, and surrounding the first
  • the second electrode 60 arranged on the electrode 50 is arranged symmetrically with respect to the first electrode 50, wherein, when the first electrode 50 is a P pole, the first electrode 50 and the first electrode 50 are arranged symmetrically.
  • the source electrode 1051 is arranged in contact with the second electrode 60 and the ground terminal 1053, or when the first electrode 50 is an N pole, the first electrode 50 is arranged in contact with the ground terminal 1053
  • the second electrode 60 is arranged in contact with the source electrode 1051 .
  • the display panel 2 includes a second substrate 101, a TFT device (not marked in the figure) disposed on the second substrate 101, and the light emitting device disposed on the second substrate 101 1.
  • the TFT device (not marked in the figure) includes the source electrode 1051 and the ground terminal 1053.
  • the light emitting device 1 includes the first electrode 50 and the first electrode 50 surrounding the first electrode 50.
  • Two electrodes 60, the second electrode 60 is arranged symmetrically with respect to the first electrode 50, wherein, when the first electrode 50 is a P pole, the first electrode 50 is arranged in contact with the source electrode 1051 , the second electrode 60 is arranged in contact with the ground terminal 1053, or when the first electrode 50 is an N pole, the first electrode 50 is provided in contact with the ground terminal 1053, and the second The electrode 60 is arranged in contact with the source electrode 1051; by setting the miniLED so that the second electrode 60 is arranged around the first electrode 50, it is only necessary to determine whether the second electrode 60 is an N pole or a P pole, and then set the The second electrode 60 abuts and aligns with the corresponding electrode of the TFT device (not marked in the figure), which reduces the difficulty of the mass transfer process.
  • the TFT device (not marked in the figure) includes a gate 102 , a gate insulating layer 103 , a semiconductor layer 104 , the source 1051 , the drain 1052 , and a passivation layer 106 .
  • a black matrix layer 107 is also arranged above the TFT device (not marked in the figure).
  • a second encapsulation layer 108 is further included above the black matrix layer and the light emitting device 1 .
  • the first electrode 50 when the first electrode 50 is an N pole, the first electrode 50 is arranged in contact with the ground terminal 1053 , and the second electrode 60 is arranged in contact with the source electrode 1051 .
  • the second electrode 60 is a P pole.
  • the second electrode 60 and the source electrode 1051 are arranged in abutment and alignment.
  • the P pole is arranged around the N pole, and the PN insulating layer 70 is also included between the P pole and the N pole.
  • the P pole and the N pole By setting the P pole and the N pole as a surrounding and insulated structure, the P pole and the N pole The poles are separated, and the P pole is circular, and the distance from any point on the P pole to the center point of the N pole is equal. Therefore, it is only necessary to select any point on the P pole and the TFT device (not marked in the figure).
  • the source electrode 1051 is abutted and aligned, and the N electrode is aligned with the ground terminal 1053, which reduces the time for mass transfer of mini LEDs.
  • a PN insulating layer 70 is further disposed between the first electrode 50 and the second electrode 60 .
  • the first electrode 50 is a P pole/N pole
  • the second electrode 60 is an N pole/P pole.
  • the second electrode 60 is arranged around the first electrode 50 , and the distance from any point on the second electrode 60 to the central point of the first electrode 50 equal distance.
  • the width of the first electrode 50 is greater than or equal to the width of the second electrode 60 at any position.
  • the surface of the second electrode 60 away from the first electrode 50 is further provided with a first encapsulation layer 80, and the first encapsulation layer 80 surrounds the The second electrode 60 is provided.
  • the first electrode 50 when the first electrode 50 is a P pole, the first electrode 50 is arranged in contact with the source electrode 1051 , and the second electrode 60 is arranged in contact with the ground terminal 1053 .
  • the second electrode 60 is an N pole.
  • the first electrode 50 and the source electrode 1051 are arranged in abutment and alignment.
  • the N pole is arranged around the P pole, and the PN insulating layer 70 is also included between the P pole and the N pole.
  • the P pole and the N pole By setting the P pole and the N pole as a surrounding and insulated structure, the P pole and the N pole The poles are separated, and the N pole is circular, and the distance from any point on the N pole to the center point of the P pole is equal. Therefore, it is only necessary to select any point on the N pole and the TFT device (not marked in the figure).
  • the ground terminal 1053 is abutted and aligned, the P pole is aligned with the ground terminal 1053, which reduces the time for mass transfer of mini LEDs.
  • the present application provides the light emitting device 1 in which the first electrode 50 is a P pole and the second electrode 60 is an N pole, and the light emitting device 1 in which the first electrode 50 is an N pole and the second electrode 60 is a P pole.
  • the light emitting device 1 to select one of the light emitting devices 1 according to actual needs, it is only necessary to judge the connection relationship between the second electrode 60 and the TFT device (not marked in the figure).
  • the light emitting device includes a first substrate, an N-type contact layer disposed on the first substrate, the active layer 30 disposed on the N-type contact layer, and the active layer 30 disposed on the N-type contact layer.

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Abstract

公开了一种发光器件（1）、一种显示面板及其制备方法，发光器件（1）包括第一电极（50）、围绕第一电极（50）设置的第二电极（60），第二电极（60）关于第一电极（50）呈对称设置；第二电极（60）上的任一点到第一电极（50）的中心点的距离相等，在进行发光器件（1）转移时，将第二电极（60）上的任一点与对应电极抵接，降低了发光器件（1）巨量转移制程的难度。

Description

发光器件、显示面板及其制备方法 技术领域
本申请涉及显示面板技术领域，具体涉及一种发光器件、一种显示面板及其制备方法。
背景技术
Micro LED和Mini LED在显示的亮度，色域、残影、功耗、寿命等方面优于现有的OLED和LCD显示装置，但是目前量产的技术瓶颈在于巨量转移制程，现有的技术无法在较小的节拍时间内将大量发光器件安装在驱动板(包括第一衬底和TFT器件)的对应位置。
同时，现有的发光器件多是PN级轴对称设计，这种设计使得设备在转移LED时需要按照正确方向对准安装LED元件，极大的增大转移难度和repair的难度。
因此，现有显示面板存在巨量转移发光器件的对准难度大的技术问题。
技术问题
本申请实施例提供一种发光器件和一种显示面板制备方法，可以缓解现有显示面板存在巨量转移发光器件的对准难度大的技术问题。
技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请提供一种发光器件，包括：
第一衬底；
设置在所述第一衬底上的N型接触层；
设置在所述N型接触层上的有源层；
设置在所述有源层上的P型接触层；
其中，所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极。
可选的，在本申请的一些实施例中，所述第一电极和所述第二电极之间还设置有PN绝缘层。
可选的，在本申请的一些实施例中，所述第一电极为N极，所述第二电极为P极；或者，所述第一电极为P极，所述第二电极为N极。
可选的，在本申请的一些实施例中，所述第二电极围绕所述第一电极设置，且所述第二电极上的任一点到所述第一电极中心点的距离相等。
可选的，在本申请的一些实施例中，在同一截面内，所述第一电极的宽度大于或等于任一位置的所述第二电极的宽度。
可选的，在本申请的一些实施例中，所述第二电极远离所述第一电极的一侧表面还设置有第一封装层，所述第一封装层围绕所述第二电极设置。
可选的，在本申请的一些实施例中，所述第一电极为圆柱状结构，所述第二电极为圆环状结构。
可选的，在本申请的一些实施例中，所述P型接触层的制备材料包括氮化镓。
可选的，在本申请的一些实施例中，所述N型接触层的制备材料包括氮化镓。
本申请提供一种显示面板，包括：
第二衬底；
设置在所述第二衬底上的TFT器件，所述TFT器件包括源极、以及接地端；
设置在所述第二衬底上的发光器件，所述发光器件包括第一电极、以及围绕所述第一电极设置的第二电极；
其中，当所述第一电极为P极时，所述第一电极与所述源极抵接设置，所述第二电极与所述接地端抵接设置，或当所述第一电极为N极时，所述第一电极与所述接地端抵接设置，所述第二电极与所述源极抵接设置。
可选的，在本申请的一些实施例中，所述第一电极为N极，所述第二电极为P极；或者，所述第一电极为P极，所述第二电极为N极。
可选的，在本申请的一些实施例中，所述第二电极围绕所述第一电极设置，且所述第二电极上的任一点到所述第一电极中心点的距离相等。
可选的，在本申请的一些实施例中，所述第一电极的宽度大于或等于所述 第二电极的宽度。
可选的，在本申请的一些实施例中，所述第一电极为N极，所述第一电极与所述接地端抵接设置，所述第二电极与所述源极抵接设置。
可选的，在本申请的一些实施例中，所述第二电极为N极，所述第二电极与所述接地端抵接设置，所述第一电极与所述源极抵接设置。
可选的，在本申请的一些实施例中，在TFT器件上方还设置有黑色矩阵层。
可选的，在本申请的一些实施例中，在所述黑色矩阵层和所述发光器件上方还设置有第二封装层。
本申请提供一种显示面板制备方法，包括：
提供第二衬底；
在所述第二衬底上制备得到TFT器件；
提供发光器件，所述发光器件包括第一电极、以及围绕所述第一电极设置的第二电极，所述第二电极关于所述第一电极呈对称设置；
将所述发光器件转移到第二衬底上，使P极与源极抵接，N极与接地端抵接。
可选的，在本申请的一些实施例中，将所述发光器件转移到第二衬底的步骤还包括：提供的发光器件的第一电极为P极且第二电极为N极时，将所述第二电极与所述接地端对齐抵接设置。
可选的，在本申请的一些实施例中，将所述发光器件转移到第二衬底的步骤还包括：提供的发光器件的第一电极为N极且第二电极为P极时，将所述第二电极与所述源极对齐抵接设置。
有益效果
本申请实施例提供的发光器件包括第一衬底、设置在所述第一衬底上的N型接触层、设置在所述N型接触层上的有源层、设置在所述有源层上的P型接触层，其中所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极；通过将第二电极围绕所述第一电极设置，且第二电极上的任一点到所述第一电极的中心点等间距位置，将第二电极上的任一点与TFT器件的对应电极抵接对齐，就能完成miniLED的转移，降低了发光器件的巨量转移制程 的难度。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请实施例提供的发光器件的第一种截面示意图；
图2是本申请实施例提供的发光器件的第二种截面示意图；
图3是本申请实施例提供的发光器件的俯视示意图；
图4是本申请实施例提供的显示面板制备方法的流程图；
图5是本申请实施例提供的显示面板的第一种截面示意图；
图6是本申请实施例提供的显示面板的第二种截面示意图。
附图标记说明：
Figure PCTCN2021098778-appb-000001
本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。
本申请实施例提供一种发光器件和一种显示面板及其制备方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。
如图1、图2所示，本申请实施例提供的所述发光器件1包括所述第一衬底10、设置在所述第一衬底10上的所述N型接触层20、设置在所述N型接触层20上的所述有源层30、设置在所述有源层30上的所述P型接触层40，其中，所述P型接触层40上还设置有所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60。
在本实施例中，所述发光器件1包括所述第一衬底10、设置在所述第一衬底10上的所述N型接触层20、设置在所述N型接触层20上的所述有源层30、设置在所述有源层30上的所述P型接触层40，其中所述P型接触层40上还设置有所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60；通过将所述第二电极60围绕所述第一电极50设置，且所述第二电极60上的任一点到所述第一电极50的中心点(图中未标注)等间距位置，将所述第二电极60上的任一点与TFT器件(图中未标注)的对应电极抵接对齐，就能完成miniLED的转移，降低了所述发光器件1的巨量转移制程的难度。
其中，如图1所示，当所述第一电极50为P极、所述第二电极60为N极时，所述第二电极60与TFT器件(图中未标注)的所述接地端1053抵接对齐；所述第一电极50通过过孔与所述P型接触层40连接，所述第二电极60通过过孔与N型接触层20连接。
其中，如图2所示，当所述第一电极50为N极、所述第二电极60为P极 时，所述第二电极60与TFT器件(图中未标注)的所述源极1051抵接对齐；所述第一电极50通过过孔与N型接触层20连接，所述第二电极60通过过孔与所述P型接触层40连接。
在一种实施例中，如图3所示，所述第一电极50和所述第二电极60之间还设置有所述PN绝缘层70。
其中，所述发光器件1还包括所述PN绝缘层70，所述PN绝缘层70围绕并贴合所述第二电极60层设置。
其中，所述第一电极50为圆柱状结构，所述第二电极60为圆环状结构。
在一种实施例中，所述第一电极50为P极，所述第二电极60为N极。
在一种实施例中，所述第一电极50为N极，所述第二电极60为P极。
在一种实施例中，所述第二电极60围绕所述第一电极50设置，且所述第二电极60上的任一点到所述第一电极50中心点的距离相等。
在一种实施例中，在同一截面内，所述第一电极50的宽度大于或等于任一所述第二电极60的宽度。
在一种实施例中，所述第二电极60远离所述第一电极50的一侧表面还设置有所述第一封装层80，所述第一封装层80围绕所述第二电极60设置。
在一种实施例中，所述P型接触层40的制备材料包括氮化镓，且/或所述N型接触层20的制备材料包括氮化镓。
如图4所示，本申请提供的所述显示面板2制备方法包括：
S1:提供第二衬底101；
S2:在第二衬底101上制备得到TFT器件(图中未标注)；
S3:提供所述发光器件1，所述发光器件1包括所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60，所述第二电极60关于所述第一电极50呈对称设置；
S4:将所述发光器件1转移到第二衬底101上，使P极与所述源极1051抵接，N极与所述接地端1053抵接。
在一种实施例中，将所述发光器件1转移到第二衬底101的步骤还包括：提供的所述发光器件1的所述第一电极50为P极且所述第二电极60为N极时，将所述第二电极60与所述接地端1053对齐抵接设置。
在本实施例中，当发光器件的第二电极为N极时，N极需要与接地端抵接设置，因此只需要将N极上的任一点与接地端对齐且连接即可，不需要辨别发光器件的正反方向，只需要将位于外侧的N极与接地端抵接对齐，就能实现发光器件的转移。
在一种实施例中，将所述发光器件1转移到第二衬底101的步骤还包括：提供的所述发光器件1的所述第一电极50为N极且所述第二电极60为P极时，将所述第二电极60与所述源极1051对齐抵接设置。
在本实施例中，当发光器件的第二电极为P极时，P极需要与源极抵接设置，因此只需要将P极上的任一点与源极对齐且连接即可，不需要辨别发光器件的正反方向，只需要将位于外侧的P极与源极抵接对齐，就能实现发光器件的转移。
如图5、图6所示，本申请提供的所述显示面板2包括第二衬底101、设置在第二衬底101上的TFT器件(图中未标注)、以及设置在第二衬底101上的所述发光器件1，TFT器件(图中未标注)包括所述源极1051、以及所述接地端1053，所述发光器件1包括所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60，所述第二电极60关于所述第一电极50呈对称设置，其中，当所述第一电极50为P极时，所述第一电极50与所述源极1051抵接设置，所述第二电极60与所述接地端1053抵接设置，或当所述第一电极50为N极时，所述第一电极50与所述接地端1053抵接设置，所述第二电极60与所述源极1051抵接设置。
在本实施例中，所述显示面板2包括第二衬底101、设置在第二衬底101上的TFT器件(图中未标注)、以及设置在第二衬底101上的所述发光器件1，TFT器件(图中未标注)包括所述源极1051、以及所述接地端1053，所述发光器件1包括所述第一电极50、以及围绕所述第一电极50设置的所述第二电极60，所述第二电极60关于所述第一电极50呈对称设置，其中，当所述第一电极50为P极时，所述第一电极50与所述源极1051抵接设置，所述第二电极60与所述接地端1053抵接设置，或当所述第一电极50为N极时，所述第一电极50与所述接地端1053抵接设置，所述第二电极60与所述源极1051抵接设置；通过将miniLED设置为所述第二电极60围绕所述第一电极50设置，只需要判定所述 第二电极60为N极或P极，然后将所述第二电极60与TFT器件(图中未标注)的对应电极抵接对齐，降低了巨量转移制程的难度。
其中，TFT器件(图中未标注)包括栅极102、栅绝缘层103、半导体层104、所述源极1051、漏极1052、钝化层106。
其中，在TFT器件(图中未标注)上方还设置有黑色矩阵层107。
其中，黑色矩阵层和所述发光器件1上方还包括第二封装层108。
在一种实施例中，当所述第一电极50为N极时，所述第一电极50与所述接地端1053抵接设置，所述第二电极60与所述源极1051抵接设置。
其中，当所述第一电极50为N极时，所述第二电极60为P极.
其中，所述第二电极60与所述源极1051抵接对齐设置。
在本实施例中，P极围绕N极设置，且P极与N极之间还包括所述PN绝缘层70，通过将P极和N极设置为围绕且绝缘的结构，将P极与N极区分开，同时P极为圆环状，P极上的任一点到N极的中心点的距离相等，因此，只需要选择P极上的任一点与TFT器件(图中未标注)的所述源极1051抵接对齐，则N极与所述接地端1053对齐，降低了巨量转移miniLED的时间。
在一种实施例中，在所述显示面板中，所述第一电极50和所述第二电极60之间还设置有PN绝缘层70。
在一种实施例中，在所述显示面板中，所述第一电极50为P极/N极，所述第二电极60为N极/P极。
在一种实施例中，在所述显示面板中，所述第二电极60围绕所述第一电极50设置，且所述第二电极60上的任一点到所述第一电极50中心点的距离相等。
在一种实施例中，在所述显示面板中，在同一截面内，所述第一电极50的宽度大于或等于任一位置的所述第二电极60的宽度。
在一种实施例中，在所述显示面板中，所述第二电极60远离所述第一电极50的一侧表面还设置有第一封装层80，所述第一封装层80围绕所述第二电极60设置。
在一种实施例中，当所述第一电极50为P极时所述第一电极50与所述源极1051抵接设置，所述第二电极60与所述接地端1053抵接设置。
其中，当所述第一电极50为P极时，所述第二电极60为N极。
其中，所述第一电极50与所述源极1051抵接对齐设置。
在本实施例中，N极围绕P极设置，且P极与N极之间还包括所述PN绝缘层70，通过将P极和N极设置为围绕且绝缘的结构，将P极与N极区分开，同时N极为圆环状，N极上的任一点到P极的中心点的距离相等，因此，只需要选择N极上的任一点与TFT器件(图中未标注)的所述接地端1053抵接对齐，则P极与所述接地端1053对齐，降低了巨量转移miniLED的时间。
本申请提供所述第一电极50为P极、所述第二电极60为N极的所述发光器件1，以及所述第一电极50为N极、所述第二电极60为P极的所述发光器件1，通过实际需要选择一种所述发光器件1，只需要判断所述第二电极60与TFT器件(图中未标注)之间的连接关系即可。
本实施例提供的发光器件包括第一衬底、设置在所述第一衬底上的N型接触层、设置在所述N型接触层上的所述有源层30、设置在所述所述有源层30上的P型接触层，其中所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极；通过将第二电极围绕所述第一电极设置，且第二电极上的任一点到所述第一电极的中心点等间距位置，将第二电极上的任一点与TFT器件的对应电极抵接对齐，就能完成miniLED的转移，降低了发光器件的巨量转移制程的难度。
以上对本申请实施例所提供的一种miniLED和一种显示面板及其制备方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种发光器件，其包括：
    第一衬底；
    设置在所述第一衬底上的N型接触层；
    设置在所述N型接触层上的有源层；
    设置在所述有源层上的P型接触层；
    其中，所述P型接触层上还设置有第一电极、以及围绕所述第一电极设置的第二电极，当所述第一电极为N极、所述第二电极为P极时，所述第一电极通过过孔与所述N型接触层连接，或当所述第一电极为P极、所述第二电极为N极时，所述第二电极通过过孔与所述N型接触层连接。
  2. 如权利要求1所述的发光器件，其中，所述第一电极和所述第二电极之间还设置有PN绝缘层。
  3. 如权利要求2所述的发光器件，其中，所述第一电极为N极，所述第二电极为P极；或者，所述第一电极为P极，所述第二电极为N极。
  4. 如权利要求3所述的发光器件，其中，所述第二电极围绕所述第一电极设置，且所述第二电极上的任一点到所述第一电极中心点的距离相等。
  5. 如权利要求4所述的发光器件，其中，在同一截面内，所述第一电极的宽度大于或等于所述第二电极的宽度。
  6. 如权利要求2所述的发光器件，其中，所述第二电极远离所述第一电极的一侧表面还设置有第一封装层，所述第一封装层围绕所述第二电极设置。
  7. 如权利要求2所述的发光器件，其中，所述第一电极为圆柱状结构，所述第二电极为圆环状结构。
  8. 如权利要求2所述的发光器件，其中，所述P型接触层的制备材料包括氮化镓。
  9. 如权利要求2所述的发光器件，其中，所述N型接触层的制备材料包括氮化镓。
  10. 一种显示面板，其包括：
    第二衬底；
    设置在所述第二衬底上的TFT器件，所述TFT器件包括源极、以及接地端；
    设置在所述第二衬底上的发光器件，所述发光器件包括第一电极、以及围绕所述第一电极设置的第二电极；
    其中，当所述第一电极为P极时，所述第一电极与所述源极抵接设置，所述第二电极与所述接地端抵接设置，或当所述第一电极为N极时，所述第一电极与所述接地端抵接设置，所述第二电极与所述源极抵接设置。
  11. 如权利要求10所述的显示面板，其中，所述第一电极为N极，所述第二电极为P极；或者，所述第一电极为P极，所述第二电极为N极。
  12. 如权利要求11所述的显示面板，其中，所述第二电极围绕所述第一电极设置，且所述第二电极上的任一点到所述第一电极中心点的距离相等。
  13. 如权利要求12所述的显示面板，其中，所述第一电极的宽度大于或等于所述第二电极的宽度。
  14. 如权利要求10所述的显示面板，其中，所述第一电极为N极，所述第一电极与所述接地端抵接设置，所述第二电极与所述源极抵接设置。
  15. 如权利要求10所述的显示面板，其中，所述第二电极为N极，所述第二电极与所述接地端抵接设置，所述第一电极与所述源极抵接设置。
  16. 如权利要求10所述的显示面板，其中，在TFT器件上方还设置有黑色矩阵层。
  17. 如权利要求16所述的显示面板，其中，在所述黑色矩阵层和所述发光器件上方还设置有第二封装层。
  18. 一种显示面板制备方法，其包括：
    提供第二衬底；
    在所述第二衬底上制备得到TFT器件；
    提供发光器件，所述发光器件包括第一电极、以及围绕所述第一电极设置的第二电极，所述第二电极关于所述第一电极呈对称设置；
    将所述发光器件转移到第二衬底上，使P极与源极抵接，N极与接地端抵接。
  19. 如权利要求18所述的显示面板制备方法，其中，将所述发光器件转移到第二衬底的步骤还包括：
    提供的发光器件的第一电极为P极且第二电极为N极时，将所述第二电极与所述接地端对齐抵接设置。
  20. 如权利要求18所述的显示面板制备方法，其中，将所述发光器件转移到第二衬底的步骤还包括：
    提供的发光器件的第一电极为N极且第二电极为P极时，将所述第二电极与所述源极对齐抵接设置。
PCT/CN2021/098778 2021-05-31 2021-06-08 发光器件、显示面板及其制备方法 Ceased WO2022252249A1 (zh)

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