WO2020187177A1 - 一种mini LED显示屏及制作方法 - Google Patents

一种mini LED显示屏及制作方法 Download PDF

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Publication number
WO2020187177A1
WO2020187177A1 PCT/CN2020/079452 CN2020079452W WO2020187177A1 WO 2020187177 A1 WO2020187177 A1 WO 2020187177A1 CN 2020079452 W CN2020079452 W CN 2020079452W WO 2020187177 A1 WO2020187177 A1 WO 2020187177A1
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mini led
led display
pole
doped semiconductor
display screen
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PCT/CN2020/079452
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English (en)
French (fr)
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林健源
罗崇辉
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深圳Tcl新技术有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

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  • the present disclosure relates to the field of display screens, in particular to a mini LED display screen and a manufacturing method.
  • a mini LED or microLED display is composed of a large number of small-sized LEDs (R, G, B) arrays.
  • the spacing between the LEDs is small, with high brightness, high contrast, ultra-high resolution and color saturation.
  • Each LED can be driven independently, which has the advantages of power saving and fast response.
  • the LED display does not require a backlight, which can reduce the thickness of the display.
  • the design method of mini LED or micro LED mainly adopts passive matrix (PM), that is, PM-LED panel.
  • PM-LED display screen will be embedded with multiple LEDs on the front of the PCB circuit board, and the back will be correspondingly set up with a lot of driver ICs to drive the LEDs.
  • driver ICs When the distance between the LEDs is smaller, the number of LEDs will increase, and the number of driver ICs will increase accordingly.
  • the size of the driver ICs must be reduced, which will extend the cost. problem.
  • the purpose of the present disclosure is to provide a mini LED display screen and a manufacturing method, which aims to solve the problem of reducing the size of the driver IC if the resolution is to be improved.
  • a mini LED display screen includes a plurality of arrays of MOS tubes, each of which is connected with a mini LED, and the on and off of the mini LED is controlled by the MOS tube.
  • each mini LED corresponds to one sub-pixel.
  • the structure of the MOS tube includes a substrate, and two electrodes G and E on the substrate.
  • the surface of the G electrode is sequentially formed with a first insulating layer, The first doped semiconductor layer, the two second doped semiconductor layers, the S and D electrodes respectively formed on the two second doped semiconductor layers, and the second insulating layer, the first Two insulating layers are used to isolate the two second doped semiconductor layers and to isolate the S pole and the D pole; the first doped semiconductor layer and the second doped semiconductor layer
  • the doping type is different.
  • the mini LED is arranged on a circuit board and is electrically connected to the MOS tube through a via on the circuit board.
  • the circuit board is a PCB board or a flexible circuit board.
  • the mini LED is soldered to the through hole of the circuit board by soldering.
  • the circuit board includes a substrate, two sides of the substrate are respectively provided with a circuit layer, and an insulating layer is provided outside the circuit layer.
  • the material of the first doped semiconductor layer is a P-type semiconductor material
  • the material of the second doped semiconductor layer is an N-type semiconductor material, forming an NPN metal-oxide Things-semiconductor field effect transistors.
  • the anode of the mini LED is connected to the D pole, and the negative electrode is connected to the E pole.
  • the G pole, E pole, S pole and D pole are all made of conductors.
  • the conductor is Cu or Al.
  • the first insulating layer and the second insulating layer are made of non-metallic materials.
  • the non-metallic material is non-conductive oxide or silicon nitride.
  • a manufacturing method of mini LED display screen including steps:
  • Step A fabricating array MOS transistors on the substrate
  • Step B Inlay mini LEDs on the circuit board to make a mini LED array corresponding to the array of MOS tubes; electrically connect each mini LED with the MOS tube at the corresponding position, and the mini LED is turned on and off Controlled by the MOS tube.
  • the step A specifically includes the following:
  • Step A1 making electrodes G and E on the substrate
  • Step A2 forming a first insulating layer on the G pole
  • Step A3 forming a first doped semiconductor layer on the first insulating layer
  • Step A4 respectively forming two second doped semiconductor layers on the first doped semiconductor layer
  • Step A5 forming electrodes S and D on the two second doped semiconductor layers, respectively;
  • Step A6 fabricating a second insulating layer, the second insulating layer is used to isolate the two second doped semiconductor layers and to isolate the S pole and the D pole;
  • the first doped semiconductor layer and the second doped semiconductor layer have different doping types.
  • the step B includes:
  • Step B Embed the mini LED on the circuit board to make a mini LED array corresponding to the array of the MOS tube, and then electrically connect the pins of the mini LED to the MOS tube through vias, Wherein, one pin of the mini LED is connected to the E pole, and the other pin is connected to the S pole or the D pole.
  • the manufacturing precision of the MOS tube is micron level.
  • the present disclosure provides a mini LED display screen as described above.
  • the present disclosure adopts a method of combining active matrix (AM) and PM to provide an AM-LED panel.
  • AM active matrix
  • PM passive matrix
  • the LED panel has a higher resolution, and the thickness of the product will be thinner because it does not require a backlight.
  • Figure 1 is a schematic diagram of the structure of the mini LED display of the present disclosure.
  • FIG. 2 is a diagram of an embodiment of a MOS tube array unit in the mini LED display of the present disclosure.
  • FIG. 3 is a diagram of an embodiment of a mini LED array unit in the mini LED display screen of the present disclosure.
  • FIG. 4 is a structural diagram of the structure of FIG. 2 and the structure of FIG. 3 after being assembled.
  • Fig. 5 is an equivalent circuit diagram of Fig. 4.
  • FIG. 6 is an equivalent circuit diagram of the mini LED display screen of the present disclosure.
  • the present disclosure provides a mini LED display screen and a manufacturing method.
  • the present disclosure is described in further detail below. It should be understood that the specific embodiments described herein are only used to explain the present disclosure, but not used to limit the present disclosure. It should be noted that in the description of the present disclosure, the terms “first” and “second” are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features.
  • the present disclosure provides a preferred embodiment of a mini LED display screen. As shown in FIG. 1, it includes a plurality of arrays of MOS tubes 1, and each of the MOS tubes 1 is connected with a mini LED 2. The on and off are controlled by the MOS tube 1.
  • each mini LED corresponds to a sub-pixel.
  • the three colors of red, green, and blue mini LEDs can be arranged in a certain order, or the mini LEDs of white and any two monochromatic colors mentioned above can be arranged in a certain order. Arrange in order and display in color.
  • FIG. 2-4 A more specific structure of the mini LED display screen of the present disclosure is shown in Figures 2-4, where the MOS tube 1 as shown in Figure 2 includes a substrate 11, such as glass, and two electrodes G on the substrate. 12 and E pole 13, the surface of the G pole 12 is sequentially formed with a first insulating layer 14, a first doped semiconductor layer 15, two second doped semiconductor layers 16, respectively formed on the two first The electrodes S pole 17 and D pole 18 on the double doped semiconductor layer 16 and the second insulating layer 19 are used to isolate the two second doped semiconductor layers 16 and used to The S pole 17 and the D pole 18 are separated; wherein the G pole 12, the E pole 13, the S pole 17 and the D pole 18 are made of conductors, such as Cu and Al in metal materials.
  • the G pole 12, the E pole 13, the S pole 17 and the D pole 18 are made of conductors, such as Cu and Al in metal materials.
  • the first insulating layer 14 and the second insulating layer 19 may be made of non-metallic materials, such as insulating materials such as non-conductive oxide or silicon nitride.
  • the doping type of the first doped semiconductor layer 15 and the second doped semiconductor layer 16 are different.
  • the first doped semiconductor layer 15 is made of P-type semiconductor material
  • the second doped semiconductor layer 16 is made of N-type semiconductor material, which can form an NPN type MOS tube.
  • the mini LED 2 can be integrated on the circuit board 3.
  • the circuit board 3 includes a substrate 31.
  • a circuit layer 32 is provided on both sides of the substrate, and an insulating layer 33 is provided on the outside of the circuit layer 32 to protect the circuit.
  • Vias 34 are provided on the circuit board.
  • the mini LED 2 is soldered to the through hole 34 of the circuit board 3 by solder 4.
  • the circuit board 3 may be a PCB board or a flexible circuit board, and cooperate with the flexible substrate 11 to make a flexible display screen.
  • the connection method of MOS tube 1 and mini LED 2 is shown in Figure 4.
  • the positive pole of mini LED 2 is connected to D pole 18, and the negative pole is connected to E pole 13.
  • G pole 12 is connected to high level
  • the first The electrons in one doped semiconductor layer 15 (P type) are adsorbed to the bottom layer, so that the upper layer of the first doped semiconductor layer 15 forms a positive electrode, and the P electrons in the two second doped semiconductor layers 16 (N type) It will move closer to the first doped semiconductor layer 15, turn on the S pole 17 and the D pole 18, so that the "switch" is in the closed state, and the mini LED 2 is lighted up. Otherwise, it is not turned on and the mini LED 2 is off.
  • the equivalent circuit diagram of the array unit is shown in Figure 5, and the equivalent circuit diagram of the entire display screen is shown in Figure 6.
  • the present disclosure uses a MOS tube to individually control the on and off of each LED. Compared with the traditional method, each LED is controlled by a driver IC, which not only saves cost, but also solves the problem of large IC footprint and high resolution. The rate of LED display problems. At the same time, since the present invention belongs to an AM-LED panel, no backlight is needed, and the thickness of the product will be thinner.
  • the present disclosure also provides a manufacturing method of a mini LED display screen, including the steps:
  • Step A Fabricate array MOS transistors on the substrate.
  • the steps of making the array of MOS tubes specifically include the following:
  • Step A1 making electrodes G and E on the substrate
  • Step A2 forming a first insulating layer on the G pole
  • Step A3 forming a first doped semiconductor layer on the first insulating layer
  • Step A4 respectively forming two second doped semiconductor layers on the first doped semiconductor layer
  • Step A5 forming electrodes S and D on the two second doped semiconductor layers, respectively;
  • Step A6 fabricating a second insulating layer, the second insulating layer is used to isolate the two second doped semiconductor layers and to isolate the S pole and the D pole;
  • the first doped semiconductor layer and the second doped semiconductor layer have different doping types.
  • the above layers can be specifically produced by a yellow light manufacturing process, which is sequentially produced by the methods of film formation, photoresist coating, exposure, development, etching, and stripping.
  • Step B Inlay mini LEDs on the circuit board to make a mini LED array corresponding to the array of MOS tubes; electrically connect each mini LED with the MOS tube at the corresponding position, specifically, the mini LED
  • the pin of the mini LED is electrically connected to the MOS tube through a via hole, wherein one pin of the mini LED is connected to the E pole, and the other pin is connected to the S pole or the D pole.
  • the on and off of the mini LED is controlled by the MOS tube.
  • the present disclosure prepares the MOS tube by the above-mentioned method, and the precision is micron level, which is far smaller than the size of the IC, and can significantly improve the resolution of the LED display screen.
  • the present disclosure provides a mini LED display screen and a manufacturing method.
  • the present disclosure uses a MOS tube to individually control the on and off of each LED. Compared with the traditional method, each LED uses a driver IC. The control not only saves the cost, but also solves the problem that the IC takes up a large space and cannot obtain a high-resolution LED display.
  • the present disclosure belongs to an AM-LED panel, no backlight is needed, and the thickness of the product will be thinner.

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Abstract

一种mini LED显示屏及制作方法，其中，mini LED显示屏，包括若干阵列的MOS管（1），每个所述MOS管（1）处连接有mini LED（2），所述mini LED（2）的亮、灭由所述MOS管（1）控制。采用主动矩阵式（AM）和被动式矩阵（PM）相结合的方法，提供了一种AM-LED面板，分辨率更高，同时由于不需要背光源，产品厚度会更薄。

Description

一种mini LED显示屏及制作方法
优先权
所述PCT专利申请要求申请日为2019年03月20日，申请号为201910214120.4的中国专利优先权，本专利申请结合了上述专利的技术方案。
技术领域
本公开涉及显示屏领域，尤其涉及一种mini LED显示屏及制作方法。
背景技术
mini LED或microLED显示屏，是由数量众多的小尺寸LED(R、G、B)阵列组成，LED之间的间距较小，具有高亮度、高对比度、超高解析度与色彩饱和度，每个LED都能独立驱动，具有省电、反应速度快等优点。同时，LED显示屏不需要背光源，能减少显示屏的厚度。
目前mini LED或micro LED设计方式主要采用被动式矩阵(Passive Matrix，PM)，即PM-LED面板。PM-LED显示屏在PCB电路板的正面会镶嵌进多颗LED，而背面则会对应设置很多驱动LED的驱动IC。当LED之间的间距越小，则LED数量就会越多，背后的驱动IC数量也会相应增加，而为了排布更多的驱动IC，就要缩小驱动IC的尺寸，则会延伸出成本问题。
因此，现有技术还有待于改进和发展。
发明内容
鉴于上述现有技术的不足，本公开的目的在于提供一种mini LED显示屏及制作方法，旨在解决现有的LED显示屏，若要提高分辨率需要减小驱动IC的尺寸所带来的成本大幅上升的问题。
本公开的技术方案如下：
一种mini LED显示屏，包括若干阵列的MOS管，每个所述MOS管处连接有mini LED，所述mini LED的亮、灭由所述MOS管控制。
所述的mini LED显示屏，其中，每个mini LED对应一个子像素。
所述的mini LED显示屏，其中，所述MOS管的结构包括：基底，以及位于所述基底上的两个电极G极和E极，所述G极的表面依次形成有第一绝缘层、第一掺杂型半导体层、两个第二掺杂型半导体层、分别形成于两个所述第二掺杂型半导体层上的电极S极和D极，以及第二绝缘层，所述第二绝缘层用于隔离两个所述第二掺杂型半导体层、并用于隔离所述S极和所述D极；所述第一掺杂型半导体层与所述第二掺杂型半导体层的掺杂类型不同。
所述的mini LED显示屏，其中，所述mini LED设置在电路板上，并通过所述电路板上的过孔与所述MOS管电连接。
所述的mini LED显示屏，其中，所述电路板为PCB板或柔性电路板。
所述的mini LED显示屏，其中，所述mini LED通过焊锡焊接在电路板的过孔处。
所述的mini LED显示屏，其中，所述电路板包括基板，所述基板两侧分别设置有线路层，所述线路层外侧设置有绝缘层。
所述的mini LED显示屏，其中，所述第一掺杂型半导体层的材料为P型半导体材料，所述第二掺杂型半导体层的材料为N型半导体材料，形成NPN型金属-氧化物-半导体场效应晶体管。
所述的mini LED显示屏，其中，所述mini LED的正极接D极，负极接E极。
所述的mini LED显示屏，其中，所述G极、E极、S极和D极均采用导体制作。
所述的mini LED显示屏，其中，所述导体为Cu或Al。
所述的mini LED显示屏，其中，所述第一绝缘层和第二绝缘层均采用非金属材料制作。
所述的mini LED显示屏，其中，所述非金属材料为不导电的氧化物或氮化硅。
一种mini LED显示屏的制作方法，包括步骤：
步骤A、在基底上制作阵列的MOS管；
步骤B、将mini LED镶嵌在电路板上，制作成与所述MOS管的阵列相对应的mini LED阵列；将每一个mini LED与对应位置的MOS管电连接，所述 mini LED的亮、灭由所述MOS管控制。
所述的mini LED显示屏的制作方法，其中，所述步骤A具体包括如下：
步骤A1、在基底上制作电极G极和E极；
步骤A2、在所述G极上制作第一绝缘层；
步骤A3、在所述第一绝缘层上制作第一掺杂型半导体层；
步骤A4、在所述第一掺杂型半导体层上分别制作两个第二掺杂型半导体层；
步骤A5、在两个所述第二掺杂型半导体层上分别制作电极S极和D极；
步骤A6、制作第二绝缘层，所述第二绝缘层用于隔离两个所述第二掺杂型半导体层、以及用于隔离所述S极和所述D极；
所述第一掺杂型半导体层与所述第二掺杂型半导体层的掺杂类型不同。
所述的mini LED显示屏的制作方法，其中，所述步骤B包括：
步骤B、将所述mini LED镶嵌在电路板上，制作成与所述MOS管的阵列相对应的mini LED阵列，然后将所述mini LED的管脚通过过孔与所述MOS管电连接，其中，所述mini LED的一个管脚与所述E极连接，另一个管脚与所述S极或所述D极连接。
所述的mini LED显示屏的制作方法，其中，所述MOS管的制作精度为微米级。
有益效果：本公开提供了一种如上所述的mini LED显示屏，本公开采用主动矩阵式(Active matrix，AM)和PM相结合的方法，提供了一种AM-LED面板，本公开的AM-LED面板，分辨率更高，同时由于不需要背光源，产品厚度会更薄。
附图说明
图1为本公开的mini LED显示屏的结构示意图。
图2为本公开的mini LED显示屏中一种MOS管阵列单元的实施例图。
图3为本公开的mini LED显示屏中一种mini LED阵列单元的实施例图。
图4为图2的结构与图3的结构组装后的结构图。
图5为图4的等效电路图。
图6为本公开的mini LED显示屏的等效电路图。
具体实施方式
本公开提供了一种mini LED显示屏及制作方法，为使本公开的目的、技术方案及效果更加清楚、明确，以下对本公开进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本公开，并不用于限定本公开。需要说明的是，在本公开的描述中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。
本公开提供了一种mini LED显示屏的较佳实施例，如图1所示，包括若干阵列的MOS管1，每个所述MOS管1处连接有mini LED 2，所述mini LED 2的亮、灭由所述MOS管1控制。
优选的，每个mini LED对应一个子像素，具体的，可以由红、绿、蓝三种颜色的mini LED按照一定的顺序进行排列，也可以由白色和前述任意两种单色的mini LED按照顺序进行排列，进行彩色显示。
本公开的mini LED显示屏一种更为具体的结构如图2-4所示，其中，MOS管1如图2包括：基底11，例如玻璃，以及位于所述基底上的两个电极G极12和E极13，所述G极12的表面依次形成有第一绝缘层14、第一掺杂型半导体层15、两个第二掺杂型半导体层16、分别形成于两个所述第二掺杂型半导体层16上的电极S极17和D极18，以及第二绝缘层19，所述第二绝缘层19用于隔离两个所述第二掺杂型半导体层16、并用于隔离所述S极17和所述D极18；其中，电极G极12、E极13、S极17和D极18采用导体制作，例如金属材料中的Cu、Al等。第一绝缘层14和第二绝缘层19可以采用非金属材料制作，例如不导电的氧化物或氮化硅等绝缘材料。所述第一掺杂型半导体层15与所述第二掺杂型半导体层16的掺杂类型不同。例如，第一掺杂型半导体层15为P型半导体材料，第二掺杂型半导体层16为N型半导体材料，可以形成NPN型MOS管。
所述mini LED 2可以集成设置在电路板3上，如图3所示，电路板3包括基板31，基板两侧分别设置有线路层32，线路层32外侧设置有绝缘层33用于保护线路层32。电路板上设置有过孔34。mini LED 2通过焊锡4焊接在电路板3的过孔34处。本公开中，电路板3可以是PCB板，也可以是柔性电路板，并配合柔性基底11制作柔性显示屏。
MOS管1与mini LED 2的连接方式如图4所示，以NPN型MOS管为例，mini LED 2的正极接D极18，负极接E极13，当G极12接高电平时，第一掺杂型半导体层15(P型)中的电子向底层吸附，使第一掺杂型半导体层15的上层形成正极，两个第二掺杂型半导体层16(N型)中的P电子则会向第一掺杂型半导体层15靠拢，导通S极17和D极18，使“开关”处于闭合状态，点亮mini LED 2。反之，则不导通，mini LED 2熄灭。阵列单元的等效电路图如图5所示，整个显示屏的等效电路图如图6所示。
本公开通过MOS管来单独控制每一颗LED的亮、灭，相比传统方法每一颗LED都采用一个驱动IC来控制，不仅节约了成本，而且解决了IC占用空间较大无法获得高分辨率的LED显示屏的问题。同时，由于本发明属于AM-LED面板，不需要背光源，产品厚度会更薄。
本公开还提供了一种mini LED显示屏的制作方法，包括步骤：
步骤A、在基底上制作阵列的MOS管。
其中，制作阵列的MOS管的步骤具体包括如下：
步骤A1、在基底上制作电极G极和E极；
步骤A2、在所述G极上制作第一绝缘层；
步骤A3、在所述第一绝缘层上制作第一掺杂型半导体层；
步骤A4、在所述第一掺杂型半导体层上分别制作两个第二掺杂型半导体层；
步骤A5、在两个所述第二掺杂型半导体层上分别制作电极S极和D极；
步骤A6、制作第二绝缘层，所述第二绝缘层用于隔离两个所述第二掺杂型半导体层、以及用于隔离所述S极和所述D极；
所述第一掺杂型半导体层与所述第二掺杂型半导体层的掺杂类型不同。以上各层，具体可以采用黄光制程制作，依次通过成膜、涂光刻胶、曝光、显影、蚀刻、脱膜的方法制作。
步骤B、将mini LED镶嵌在电路板上，制作成与所述MOS管的阵列相对应的mini LED阵列；将每一个mini LED与对应位置的MOS管电连接，具体的，将所述mini LED的管脚通过过孔与所述MOS管电连接，其中，所述mini LED的一个管脚与所述E极连接，另一个管脚与所述S极或D极连接。所述mini LED的亮、灭由所述MOS管控制。
本公开通过上述方法制备MOS管，精度为微米级，远远小于IC的尺寸，可显著提高LED显示屏的分辨率。
综上所述，本公开提供了一种mini LED显示屏及制作方法，本公开通过MOS管来单独控制每一颗LED的亮、灭，相比传统方法每一颗LED都采用一个驱动IC来控制，不仅节约了成本，而且解决了IC占用空间较大无法获得高分辨率的LED显示屏的问题。同时，由于本公开属于AM-LED面板，不需要背光源，产品厚度会更薄。
应当理解的是，本公开的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本公开所附权利要求的保护范围。

Claims (17)

  1. 一种mini LED显示屏，其中，包括若干阵列的MOS管，每个所述MOS管处连接有mini LED，所述mini LED的亮、灭由所述MOS管控制。
  2. 根据权利要求1所述的mini LED显示屏，其中，每个mini LED对应一个子像素。
  3. 根据权利要求1所述的mini LED显示屏，其中，所述MOS管的结构包括：基底，以及位于所述基底上的两个电极G极和E极，所述G极的表面依次形成有第一绝缘层、第一掺杂型半导体层、两个第二掺杂型半导体层、分别形成于两个所述第二掺杂型半导体层上的电极S极和D极，以及第二绝缘层，所述第二绝缘层用于隔离两个所述第二掺杂型半导体层、并用于隔离所述S极和所述D极；所述第一掺杂型半导体层与所述第二掺杂型半导体层的掺杂类型不同。
  4. 根据权利要求3所述的mini LED显示屏，其中，所述mini LED设置在电路板上，并通过所述电路板上的过孔与所述MOS管电连接。
  5. 根据权利要求4所述的mini LED显示屏，其中，所述电路板为PCB板或柔性电路板。
  6. 根据权利要求4所述的mini LED显示屏，其中，所述mini LED通过焊锡焊接在电路板的过孔处。
  7. 根据权利要求4所述的mini LED显示屏，其中，所述电路板包括基板，所述基板两侧分别设置有线路层，所述线路层外侧设置有绝缘层。
  8. 根据权利要求3所述的mini LED显示屏，其中，所述第一掺杂型半导体层的材料为P型半导体材料，所述第二掺杂型半导体层的材料为N型半导体材料，形成NPN型金属-氧化物-半导体场效应晶体管。
  9. 根据权利要求8所述的mini LED显示屏，其中，所述mini LED的正极接D极，负极接E极。
  10. 根据权利要求3所述的mini LED显示屏，其中，所述G极、E极、S极和D极均采用导体制作。
  11. 根据权利要求10所述的mini LED显示屏，其中，所述导体为Cu或Al。
  12. 根据权利要求3所述的mini LED显示屏，其中，所述第一绝缘层和第二绝缘层均采用非金属材料制作。
  13. 根据权利要求12所述的mini LED显示屏，其中，所述非金属材料为不 导电的氧化物或氮化硅。
  14. 一种mini LED显示屏的制作方法，其中，包括步骤：
    步骤A、在基底上制作阵列的MOS管；
    步骤B、将mini LED镶嵌在电路板上，制作成与所述MOS管的阵列相对应的mini LED阵列；将每一个mini LED与对应位置的MOS管电连接，所述mini LED的亮、灭由所述MOS管控制。
  15. 根据权利要求14所述的mini LED显示屏的制作方法，其中，所述步骤A具体包括如下：
    步骤A1、在基底上制作电极G极和E极；
    步骤A2、在所述G极上制作第一绝缘层；
    步骤A3、在所述第一绝缘层上制作第一掺杂型半导体层；
    步骤A4、在所述第一掺杂型半导体层上分别制作两个第二掺杂型半导体层；
    步骤A5、在两个所述第二掺杂型半导体层上分别制作电极S极和D极；
    步骤A6、制作第二绝缘层，所述第二绝缘层用于隔离两个所述第二掺杂型半导体层、以及用于隔离所述S极和所述D极；
    所述第一掺杂型半导体层与所述第二掺杂型半导体层的掺杂类型不同。
  16. 根据权利要求15所述的mini LED显示屏的制作方法，其中，所述步骤B包括：
    步骤B、将所述mini LED镶嵌在电路板上，制作成与所述MOS管的阵列相对应的mini LED阵列，然后将所述mini LED的管脚通过过孔与所述MOS管电连接，其中，所述mini LED的一个管脚与所述E极连接，另一个管脚与所述S极或所述D极连接。
  17. 根据权利要求14所述的mini LED显示屏的制作方法，其中，所述MOS管的制作精度为微米级。
PCT/CN2020/079452 2019-03-20 2020-03-16 一种mini LED显示屏及制作方法 WO2020187177A1 (zh)

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