WO2022244342A1 - 切削工具 - Google Patents

切削工具 Download PDF

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Publication number
WO2022244342A1
WO2022244342A1 PCT/JP2022/005116 JP2022005116W WO2022244342A1 WO 2022244342 A1 WO2022244342 A1 WO 2022244342A1 JP 2022005116 W JP2022005116 W JP 2022005116W WO 2022244342 A1 WO2022244342 A1 WO 2022244342A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
cutting tool
group
tac
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/005116
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
治世 福井
大二 田林
桃子 飯田
大勢 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Hardmetal Corp
Original Assignee
Sumitomo Electric Hardmetal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/JP2021/019172 external-priority patent/WO2022244190A1/ja
Priority claimed from PCT/JP2021/019173 external-priority patent/WO2022244191A1/ja
Application filed by Sumitomo Electric Hardmetal Corp filed Critical Sumitomo Electric Hardmetal Corp
Priority to EP22804264.4A priority Critical patent/EP4306246A4/en
Priority to US18/286,558 priority patent/US12605770B2/en
Priority to JP2022542762A priority patent/JP7305054B2/ja
Priority to CN202280028187.9A priority patent/CN117120192A/zh
Publication of WO2022244342A1 publication Critical patent/WO2022244342A1/ja
Priority to JP2023103471A priority patent/JP7622344B2/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
    • B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
    • B23B27/148—Composition of the cutting inserts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0664—Carbonitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/067—Borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0676—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
    • C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
    • C23C28/44—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by a measurable physical property of the alternating layer or system, e.g. thickness, density, hardness
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B2228/00—Properties of materials of tools or workpieces, materials of tools or workpieces applied in a specific manner
    • B23B2228/10—Coatings
    • B23B2228/105—Coatings with specified thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick

Definitions

  • Patent Document 1 discloses a cutting tool having a coating comprising a WC 1-x layer disposed on a substrate.
  • a cutting tool of the present disclosure comprises a substrate and a coating disposed on the substrate,
  • the coating comprises a first layer,
  • the first layer consists of a MoC 1-x layer made of a compound represented by MoC 1-x or a TaC 1 -y layer made of a compound represented by TaC 1-y,
  • the compound represented by MoC 1-x has a hexagonal crystal structure,
  • the x is 0.40 or more and 0.60 or less
  • the compound represented by TaC 1-y contains 95% by mass or more of a hexagonal crystal structure, Said y is a cutting tool which is 0.40-0.60.
  • FIG. 1 is a perspective view illustrating one mode of a cutting tool.
  • FIG. 2 is a schematic cross-sectional view of a cutting tool in one aspect of the present embodiment.
  • FIG. 3 is a schematic cross-sectional view of a cutting tool in another aspect of this embodiment.
  • FIG. 4 is a schematic cross-sectional view of a cutting tool in another aspect of this embodiment.
  • a cutting tool of the present disclosure comprises a substrate and a coating disposed on the substrate,
  • the coating comprises a first layer,
  • the first layer consists of a MoC 1-x layer made of a compound represented by MoC 1-x or a TaC 1 -y layer made of a compound represented by TaC 1-y,
  • the compound represented by MoC 1-x has a hexagonal crystal structure,
  • the x is 0.40 or more and 0.60 or less
  • the compound represented by TaC 1-y contains 95% by mass or more of a hexagonal crystal structure, Said y is a cutting tool which is 0.40-0.60.
  • the first layer preferably does not contain free carbon. According to this, the chipping resistance and wear resistance of the cutting tool are improved.
  • the film hardness of the first layer is preferably 2700 mgf/ ⁇ m 2 or more and 4200 mgf/ ⁇ m 2 or less. According to this, the chipping resistance and wear resistance of the cutting tool are improved.
  • the first layer is preferably in contact with the substrate. According to this, the cutting tool can have excellent fracture resistance and wear resistance.
  • the coating further comprises a hard coating layer disposed between the substrate and the first layer;
  • the hard coating layer includes a first unit layer,
  • the composition of the first unit layer is different from the composition of the first layer,
  • the first unit layer is composed of at least one element selected from the group consisting of periodic table 4 group elements, 5 group elements, 6 group elements, aluminum and silicon, or periodic table 4 group elements, 5 group elements, It is preferably composed of a compound consisting of at least one element selected from the group consisting of Group 6 elements, aluminum and silicon, and at least one element selected from the group consisting of carbon, nitrogen, oxygen and boron.
  • the chipping resistance and wear resistance of the cutting tool are improved.
  • the hard coating layer is composed of the first unit layer;
  • the thickness of the first unit layer is preferably 0.1 ⁇ m or more and 15 ⁇ m or less.
  • the chipping resistance and wear resistance of the cutting tool are improved.
  • the hard coating layer further includes a second unit layer,
  • the composition of the second unit layer is different from the composition of the first layer and the composition of the first unit layer,
  • the second unit layer is composed of at least one element selected from the group consisting of periodic table 4 group elements, 5 group elements, 6 group elements, aluminum and silicon, or periodic table 4 group elements, 5 group elements, A compound consisting of at least one element selected from the group consisting of Group 6 elements, aluminum and silicon, and at least one element selected from the group consisting of carbon, nitrogen, oxygen and boron, It is preferable that the first unit layer and the second unit layer each form a multi-layer structure in which one or more layers are alternately laminated.
  • the chipping resistance and wear resistance of the cutting tool are improved.
  • the first unit layer has a thickness of 1 nm or more and 100 nm or less;
  • the thickness of the second unit layer is preferably 1 nm or more and 100 nm or less. According to this, the chipping resistance and wear resistance of the cutting tool are improved.
  • the thickness of the first layer is 0.1 ⁇ m or more and 10 ⁇ m or less;
  • the thickness of the hard coating layer is preferably 0.1 ⁇ m or more and 10 ⁇ m or less. According to this, the chipping resistance and wear resistance of the cutting tool are improved.
  • the thickness of the coating is preferably 0.2 ⁇ m or more and 20 ⁇ m or less. According to this, the chipping resistance and wear resistance of the cutting tool are improved.
  • the substrate preferably contains at least one selected from the group consisting of cemented carbide, cermet, high-speed steel, ceramics, cubic boron nitride sintered bodies, and diamond sintered bodies. According to this, the cutting tool can have excellent hardness and strength even at high temperatures.
  • a compound or the like when represented by a chemical formula, it shall include any conventionally known atomic ratio unless the atomic ratio is particularly limited, and should not necessarily be limited only to those within the stoichiometric range.
  • TiAlN when “TiAlN" is described, the ratio of the number of atoms constituting TiAlN includes all conventionally known atomic ratios.
  • a cutting tool according to the present disclosure (hereinafter also referred to as Embodiment 1 or this embodiment) is a cutting tool comprising a substrate and a coating disposed on the substrate, The coating comprises a first layer, The first layer consists of a MoC 1-x layer made of a compound represented by MoC 1-x or a TaC 1 -y layer made of a compound represented by TaC 1-y, The compound represented by MoC 1-x has a hexagonal crystal structure, The x is 0.40 or more and 0.60 or less, The compound represented by TaC 1-y contains 95% by mass or more of a hexagonal crystal structure, Said y is a cutting tool which is 0.40-0.60.
  • the cutting tool of the present embodiment (hereinafter sometimes simply referred to as "cutting tool") includes a base material and a coating disposed on the base material.
  • the cutting tools include drills, end mills, indexable cutting inserts for drills, indexable cutting inserts for end mills, indexable cutting inserts for milling, indexable cutting inserts for turning, metal saws, and gear cutting tools. , reamers, taps, and the like.
  • FIG. 1 is a perspective view illustrating one aspect of a cutting tool.
  • a cutting tool having such a shape is used, for example, as an indexable cutting tip.
  • the cutting tool 10 has a rake face 1, a flank face 2, and a cutting edge ridge 3 where the rake face 1 and the flank face 2 intersect. That is, the rake face 1 and the flank face 2 are surfaces connected with the cutting edge ridge 3 interposed therebetween.
  • the cutting edge ridge 3 constitutes the cutting edge of the cutting tool 10 .
  • Such a shape of the cutting tool 10 can also be grasped as the shape of the base material of the cutting tool. That is, the substrate has a rake face, a flank face, and a cutting edge ridge connecting the rake face and the flank face.
  • the base material is a cemented carbide (for example, tungsten carbide (WC) based cemented carbide, WC—Co based cemented carbide, WC—TaC—Co based cemented carbide, Cr, Ti, Ta, Nb, etc. Cemented carbide, etc. with carbonitrides added), cermet (mainly composed of TiC, TiN, TiCN, etc.), high-speed steel, ceramics (titanium carbide, silicon carbide, silicon nitride, aluminum nitride, aluminum oxide, etc.
  • cemented carbide for example, tungsten carbide (WC) based cemented carbide, WC—Co based cemented carbide, WC—TaC—Co based cemented carbide, Cr, Ti, Ta, Nb, etc. Cemented carbide, etc. with carbonitrides added
  • cermet mainly composed of TiC, TiN, TiCN, etc.
  • high-speed steel ceramics (titanium carbide, silicon carbide, silicon n
  • cBN sintered bodies cubic boron nitride sintered bodies
  • diamond sintered bodies cemented carbide, cermet and cBN sintered bodies From the group consisting of It is more preferable to include at least one selected.
  • the effect of the present embodiment is exhibited even if such a cemented carbide contains an abnormal phase called free carbon or ⁇ phase in the structure.
  • the base material used in this embodiment may have a modified surface.
  • a ⁇ -free layer may be formed on the surface, and in the case of cermet, a surface-hardened layer may be formed. The effect of is shown.
  • the substrate may or may not have a chip breaker.
  • the shape of the ridge line of the cutting edge is sharp edge (the ridge where the rake face and the flank face intersect), honing (sharp edge rounded shape), negative land (chamfered shape), and a combination of honing and negative land. any shape is included.
  • the "coating” according to the present embodiment covers at least a portion of the surface of the base material, thereby improving various properties of the cutting tool such as chipping resistance and wear resistance.
  • “at least a portion of the surface of the base material” includes a portion that comes into contact with the work material during cutting.
  • the portion in contact with the work material can be, for example, a region within 2 mm from the ridgeline of the cutting edge on the surface of the base material. It should be noted that even if a part of the base material is not covered with the coating or the composition of the coating is partially different, this does not depart from the scope of the present embodiment.
  • the coating 4 can consist of a first layer 12, as shown in FIG. As shown in FIGS. 3 and 4 , the coating 4 can include a first layer 12 and a hard coating layer 13 disposed between the first layer 12 and the substrate 11 . Coating 4 may include other layers in addition to first layer 12 . Other layers include, for example, a base layer (not shown) disposed between the hard coating layer and the substrate, and an intermediate layer (not illustrated) disposed between the first layer and the hard coating layer. , a surface layer (not shown) disposed on the first layer, and the like.
  • the thickness of the coating is preferably 0.1 ⁇ m or more and 20 ⁇ m or less, preferably 0.1 ⁇ m or more and 10 ⁇ m or less, preferably 0.2 ⁇ m or more and 20 ⁇ m or less, preferably 0.2 ⁇ m or more and 10 ⁇ m or less, and more preferably 0.3 ⁇ m or more and 10 ⁇ m or less. It is preferably 0.5 ⁇ m or more and 10 ⁇ m or less, even more preferably 1 ⁇ m or more and 6 ⁇ m or less, and particularly preferably 1.5 ⁇ m or more and 4 ⁇ m or less. When the thickness is 0.1 ⁇ m or more, the wear resistance of the cutting tool is improved.
  • the thickness of the coating means the sum of the thicknesses of the layers constituting the coating such as the MoC 1-x layer, the TaC 1-y layer, the hard coating layer and the base layer.
  • the thickness of the coating is measured using a transmission electron microscope (TEM) at any three points in a cross-sectional sample parallel to the normal direction of the surface of the substrate, and the average thickness of the three measured points. Find by taking the value.
  • TEM transmission electron microscope
  • the coating comprises a first layer, the first layer being a MoC 1 -x layer consisting of a compound denoted by MoC 1-x or TaC 1 comprising a compound denoted by TaC 1 -y - consists of y layers.
  • the MoC 1-x layer consists of a compound denoted by MoC 1-x .
  • the “compound represented by MoC 1-x ” (hereinafter sometimes referred to as “MoC 1-x ”) means that when the element ratio of molybdenum element (Mo) is 1, the amount of carbon element (C) It means molybdenum carbide with an elemental ratio of 1-x.
  • the MoC 1-x layer may contain unavoidable impurities within a range that does not impair the effects of the cutting tool according to the present embodiment. Examples of the unavoidable impurities include hydrogen, oxygen, nitrogen and argon.
  • the content of the inevitable impurities is preferably 0% by mass or more and 0.2% by mass or less with respect to the total mass of the MoC 1-x layer.
  • the terms "hard coating layer” and “other layers” described later may also contain unavoidable impurities within a range that does not impair the effects of the cutting tool according to the present embodiment.
  • x is 0.40 or more and 0.60 or less, preferably 0.45 or more and 0.55 or less, and more preferably 0.50 or more and 0.55 or less.
  • x is less than 0.40, free carbon tends to precipitate at grain boundaries of MoC 1-x and the strength tends to decrease.
  • x exceeds 0.60, the strength of the grain boundary tends to decrease. Therefore, when x is outside the range of 0.40 or more and 0.60 or less, crack growth cannot be suppressed, and the toughness tends to be low. The present inventors presume that such a tendency is caused by an inappropriate balance between crystal homogeneity and strain.
  • the above x obtains a cross-sectional sample parallel to the normal direction of the surface of the substrate in the MoC 1-x layer, and scans the grains appearing in this cross-sectional sample with a scanning electron microscope (SEM) or TEM. It can be determined by analysis using an energy dispersive X-ray spectroscopy (EDX) device. Specifically, the value of x is obtained by measuring each of arbitrary three points in the MoC 1-x layer of the cross-sectional sample, and the average value of the values of the three points obtained is the MoC 1-x of the cross-sectional sample. Let x be in the layer. Here, for the “arbitrary three points”, three arbitrary 30 nm ⁇ 30 nm regions in the MoC 1-x layer are selected. Examples of the EDX apparatus include JED-2200 (trademark), a silicon drift detector manufactured by JEOL Ltd. The measurement conditions are as follows.
  • the compound represented by MoC 1-x has a hexagonal crystal structure.
  • the compound represented by MoC 1-x has a hexagonal crystal structure, which means that the percentage of the hexagonal crystal structure in the compound represented by MoC 1-x is 100% by mass, and other does not contain a crystal structure of the crystal form of
  • the compound represented by MoC 1-x has a hexagonal crystal structure, for example, by performing X-ray diffraction measurement (XRD measurement) on any three points in the MoC 1-x layer. is confirmed by When the compound represented by MoC 1-x has a hexagonal crystal structure, the (100) plane, the (002) plane, the (101) plane, and the (102) plane in all three measurement points in the XRD measurement.
  • a peak derived from a hexagonal crystal plane such as a plane, (110) plane, (103) plane, (112) plane, and (201) plane is observed, and a peak derived from a crystal plane of a crystal system other than the hexagonal crystal system is not observed.
  • Examples of the apparatus used for the X-ray diffraction measurement include "SmartLab” (trade name) manufactured by Rigaku Corporation and "X'pert” (trade name) manufactured by PANalytical. The measurement conditions are as follows.
  • the TaC 1-y layer consists of a compound represented by TaC 1-y .
  • the “compound represented by TaC 1-y ” (hereinafter sometimes referred to as “TaC 1-y ”) means that when the element ratio of the tantalum element (Ta) is 1, the amount of the carbon element (C) is It means tantalum carbide with an elemental ratio of 1-y.
  • the TaC 1-y layer may contain unavoidable impurities within a range that does not impair the effects of the cutting tool according to the present embodiment. Examples of the unavoidable impurities include hydrogen, oxygen, nitrogen and argon.
  • the content of the inevitable impurities is preferably 0% by mass or more and 0.2% by mass or less with respect to the total mass of the TaC 1-y layer.
  • the above y is 0.40 or more and 0.60 or less, preferably 0.45 or more and 0.55 or less, and more preferably 0.50 or more and 0.55 or less.
  • y is less than 0.40, free carbon tends to precipitate at the grain boundaries of TaC 1-x and the strength tends to decrease.
  • y exceeds 0.6, the strength of the grain boundary tends to decrease. Therefore, if y is out of the above range, crack growth cannot be suppressed and the toughness tends to be low. The present inventors presume that such a tendency is caused by an inappropriate balance between crystal homogeneity and strain.
  • the y is measured by SEM or EDX with TME in the same manner as the method for measuring x in the MoC 1-x layer.
  • the specific measurement method and measurement conditions are the same as those for x in the MoC 1-x layer.
  • the compound represented by TaC 1-y contains 95% by mass or more of a hexagonal crystal structure.
  • the content of the hexagonal crystal structure in the compound represented by TaC 1-y is preferably 96% by mass or more, more preferably 98% by mass or more, and still more preferably 100% by mass. It is confirmed by the following method that the compound represented by TaC 1-y contains 95% by mass or more of the hexagonal crystal structure.
  • the peak area ⁇ Si is defined as the amount (% by mass) of the hexagonal crystal structure in the compound represented by TaC 1-y
  • the peak area ⁇ S′i is defined as the amount (% by mass) of the cubic crystal structure in the compound represented by TaC 1-y .
  • the percentage of the hexagonal crystal structure amount ⁇ Si to the total of the hexagonal crystal structure amount ⁇ Si and the cubic crystal structure amount ⁇ S'i ( ⁇ Si/( ⁇ Si+ ⁇ S'i) ⁇ 100) is calculated.
  • the above XRD measurement is performed on arbitrary three points of the TaC 1-y layer, and the average value of ( ⁇ Si/( ⁇ Si+ ⁇ S'i) ⁇ 100) of the three points is calculated.
  • the average value is defined as the content (% by mass) of the hexagonal crystal structure in the compound represented by TaC 1-y .
  • the compound represented by TaC 1-y has only a hexagonal crystal structure
  • the (100) plane, the (002) plane, the (101) plane, Peaks derived from hexagonal crystal planes such as (110) plane, (102) plane, (110) plane, (103) plane, (112) plane, and (201) plane are observed, and crystals other than hexagonal crystals No peaks originating from the crystal planes of the system are observed.
  • the apparatus and measurement conditions used for the X-ray diffraction measurement are the same as those for confirming the crystal structure of the compound represented by MoC 1-x described above.
  • FIG. 2 is a schematic cross-sectional view of a cutting tool in one aspect of this embodiment.
  • the first layer 12 is preferably in contact with the substrate 11 .
  • the first layer 12 is preferably provided directly above the substrate 11 .
  • the first layer preferably does not contain free carbon.
  • the first layer does not contain free carbon means both that the first layer does not contain any free carbon and that the amount of free carbon in the first layer is below the detection limit. including.
  • XPS method X-ray photoelectron spectroscopy
  • the first layer is determined to contain free carbon. If no carbon-carbon double bonds are present at any of the above three points, the first layer is determined to be free of free carbon.
  • the presence or absence of free carbon is measured after removing the natural oxide layer by Ar 2 + sputtering or the like. When the first layer is not the outermost surface, the first layer is exposed by Ar 2 + sputtering or the like, and then the presence or absence of the free carbon is measured.
  • Versa Probe III (trade name) manufactured by ULVAC-Phi, Inc. can be used as an apparatus used for the XPS method.
  • the measurement conditions are as follows.
  • the film hardness of the first layer is preferably 2700 mgf/ ⁇ m 2 or more and 4200 mgf/ ⁇ m 2 or less, more preferably 2700 mgf/ ⁇ m 2 or more and 4100 mgf/ ⁇ m 2 or less, and 2800 mgf/ ⁇ m 2 or more and 4000 mgf/ ⁇ m 2 or more. The following are more preferable.
  • the film hardness is measured with a nanoindenter. Specifically, first, arbitrary 10 points on the surface of the first layer are measured to obtain the film hardness. After that, the average value of the 10 obtained film hardnesses is taken as the film hardness of the first layer of the cross-sectional sample.
  • the first layer is not the outermost surface, the first layer is exposed by mechanical polishing or the like, and then the measurement is performed with the nanoindenter.
  • the nanoindenter include ENT1100 (trade name) manufactured by Elionix Co., Ltd. The measurement conditions are as follows.
  • the thickness of the first layer is preferably 0.1 ⁇ m or more and 10.0 ⁇ m or less, preferably 0.1 ⁇ m or more and 7 ⁇ m or less, and more preferably 0.5 ⁇ m or more and 3 ⁇ m or less.
  • the coating further comprises a hard coating layer disposed between the substrate and the first layer.
  • the hard coating layer preferably includes a first unit layer.
  • the composition of the first unit layer is preferably different from the composition of the first layer.
  • "disposed between the substrate and the first layer” means that the hard coating layer is disposed between the substrate and the first layer, and the hard coating layer includes the substrate and the first layer. It does not need to be in contact with one layer.
  • Another layer may be arranged between the substrate and the hard coating layer, or another layer may be arranged between the hard coating layer and the first layer.
  • the first unit layer is composed of at least one element selected from the group consisting of periodic table 4 group elements, 5 group elements, 6 group elements, aluminum and silicon, or periodic table 4 group elements, 5 group elements, 6 It is preferably composed of a compound consisting of at least one element selected from the group consisting of group elements, aluminum and silicon, and at least one element selected from the group consisting of carbon, nitrogen, oxygen and boron.
  • the first unit layer contains at least one element selected from the group consisting of chromium, aluminum, titanium and silicon, or at least one element selected from the group consisting of chromium, aluminum, titanium and silicon, carbon and nitrogen. , and at least one element selected from the group consisting of oxygen and boron.
  • Group 4 elements of the periodic table include titanium (Ti), zirconium (Zr), hafnium (Hf), and the like. Vanadium (V), niobium (Nb), tantalum (Ta), etc. are mentioned as a periodic table V group element.
  • Group 6 elements of the periodic table include chromium (Cr), molybdenum (Mo), tungsten (W), and the like.
  • Examples of compounds contained in the first unit layer include TiAlN, TiAlSiCN, TiAlSiON, TiAlBCN, TiAlSiN, TiCrSiN, TiAlCrSiN, AlCrN, AlCrO, AlCrSiN, TiZrN, TiAlMoN, TiAlNbN, TiSiN, AlCrTaN, AlTiVN, TiB 2 , TiCrHfN, CrSiWN, TiAlCN, TiSiCN, AlZrON, AlCrCN, AlHfN, CrSiBON, CrAlBN, TiAlWN, AlCrMoCN, TiAlBN, TiAlCrSiBCNO, ZrN, ZrB 2 , ZrCN, CrSiBN, AlCrBN, AlCrBON and the like.
  • the thickness of the first unit layer is preferably 0.1 ⁇ m or more and 15 ⁇ m or less. , 0.1 ⁇ m or more and 10 ⁇ m or less, and more preferably 0.5 ⁇ m or more and 7 ⁇ m or less.
  • the hard coating layer further includes a second unit layer.
  • the composition of the second unit layer is preferably different from the composition of the first layer and the composition of the first unit layer.
  • the second unit layer is composed of at least one element selected from the group consisting of periodic table 4 group elements, 5 group elements, 6 group elements, aluminum and silicon, or periodic table 4 group elements, 5 group elements, 6 It is preferably composed of a compound consisting of at least one element selected from the group consisting of group elements, aluminum and silicon, and at least one element selected from the group consisting of carbon, nitrogen, oxygen and boron.
  • the second unit layer contains at least one element selected from the group consisting of chromium, aluminum, titanium, and silicon, or at least one element selected from the group consisting of chromium, aluminum, titanium, and silicon, carbon, and nitrogen. , and at least one element selected from the group consisting of oxygen and boron.
  • Specific examples of the Group 4 elements, Group 5 elements, and Group 6 elements of the periodic table include the elements described above.
  • Examples of the compound contained in the second unit layer include the above compounds exemplified as the compound contained in the first unit layer.
  • the first unit layer and the second unit layer preferably form a multi-layer structure in which one or more layers are alternately laminated. That is, as shown in FIG. 4, the hard coating layer 13 preferably includes a multi-layer structure consisting of a first unit layer 131 and a second unit layer 132. As shown in FIG. Here, lamination of the multilayer structure may start from either the first unit layer or the second unit layer. That is, the interface on the first layer side in the multilayer structure may be composed of either the first unit layer or the second unit layer. Moreover, the interface on the side opposite to the first layer side in the multilayer structure may be composed of either the first unit layer or the second unit layer.
  • the thickness of the hard coating layer is preferably 0.1 ⁇ m or more and 10 ⁇ m or less, more preferably 0.5 ⁇ m or more and 7 ⁇ m or less.
  • the first layer preferably has a thickness of 0.1 ⁇ m or more and 10 ⁇ m or less, and the hard coating layer preferably has a thickness of 0.1 ⁇ m or more and 10 ⁇ m or less. According to this, the chipping resistance and wear resistance of the cutting tool are improved.
  • the thickness of the first unit layer is preferably 1 nm or more and 100 nm or less, preferably 1 nm or more and 50 nm or less, and more preferably 2 nm or more and 25 nm or less.
  • the thickness of the second unit layer is preferably 1 nm or more and 100 nm or less, preferably 1 nm or more and 60 nm or less, and more preferably 2 nm or more and 25 nm or less.
  • the thickness of the first unit layer is 1 nm or more and 100 nm or less
  • the thickness of the second unit layer is 1 nm or more and 100 nm or less.
  • the "thickness of the first unit layer” means the thickness of one of the first unit layers.
  • the “thickness of the second unit layer” means the thickness of one of the second unit layers.
  • the number of laminated layers in the multilayer structure includes a mode in which one layer each of the first unit layer and the second unit layer is laminated, and preferably both layers are laminated. 20 to 2500 layers can be laminated.
  • the coating may further include other layers as long as the effects of the present embodiment are not impaired.
  • the composition of the other layer may be different from or the same as that of the first layer and the hard coating layer.
  • the positions of other layers in the coating are also not particularly limited.
  • other layers include a base layer provided between the substrate and the first layer, an intermediate layer provided between the first layer and the hard coating layer, the first Examples include a surface layer provided on a layer.
  • Other layers include, for example, a TiN layer, a TiWCN layer, a TiCN layer, a ZrB2 layer, a TiSiN phase, an AlCrN layer, and the like.
  • the thickness of other layers is not particularly limited as long as it does not impair the effects of the present embodiment.
  • the thickness is 0.002 ⁇ m or more and 10 ⁇ m or less.
  • the thickness of the other layers can be 0.003 ⁇ m to 1 ⁇ m, 0.003 ⁇ m to 0.01 ⁇ m, 0.5 ⁇ m to 10 ⁇ m, 0.5 ⁇ m to 5 ⁇ m.
  • the manufacturing method of the cutting tool according to the present embodiment includes a substrate preparation step and a first layer coating step. Each step will be described below.
  • the base material is prepared.
  • any base material can be used as long as it is conventionally known as this type of base material, as described above.
  • the base material is made of a cemented carbide
  • raw material powders having a predetermined composition % by mass
  • this mixed powder is pressure-molded into a predetermined shape (eg, SEET13T3AGSN, CNMG120408N-EG, etc.).
  • a predetermined shape eg, SEET13T3AGSN, CNMG120408N-EG, etc.
  • the substrate made of cemented carbide can be obtained.
  • a commercially available product may be used as it is for the base material.
  • Commercially available products include EH520 (trademark) manufactured by Sumitomo Electric Hardmetal Co., Ltd., for example.
  • First layer coating step In the first layer coating step, at least part of the surface of the base material is coated with the first layer to obtain a cutting tool.
  • “at least a portion of the surface of the base material” includes a portion that comes into contact with the work material during cutting.
  • the portion in contact with the work material can be, for example, a region within 2 mm from the ridgeline of the cutting edge on the surface of the base material.
  • the method of covering at least part of the base material with the first layer is not particularly limited.
  • forming the first layer by a physical vapor deposition method (PVD method) can be mentioned.
  • the physical vapor deposition method conventionally known physical vapor deposition methods can be used without particular limitation.
  • Examples of such a physical vapor deposition method include a sputtering method, an ion plating method, an arc ion plating method, an electron ion beam vapor deposition method, and the like.
  • metal bombardment treatment and/or gas ion bombardment treatment can be performed on the substrate surface before forming the coating. , is preferable because the adhesion between the coating and the substrate is remarkably improved.
  • Mo has a high melting point and is difficult to melt. Therefore, a stable discharge could not be maintained in the physical vapor deposition method, and a MoC layer composed of hexagonal MoC and having good film quality could not be formed.
  • the present inventors have found a method for stably producing a MoC 1-x layer of hexagonal MoC 1-x and having good film quality. As an example of the method, the case of forming a MoC 1-x layer (0.40 ⁇ x ⁇ 0.60) having a hexagonal crystal structure by arc ion plating will be described below.
  • the MoC target is set in the arc-type evaporation source in the apparatus, the substrate (base material) temperature is set to 450 to 600° C., and the apparatus is evacuated. Subsequently, for example, one or both of argon gas and krypton gas are introduced to set the gas pressure in the apparatus to 1.0-3.0 Pa. Then, a negative bias voltage of 200 to 1000 V is applied to the substrate via a DC power supply to clean the surface of the substrate for 40 minutes. After that, an arc current of 80 to 200 A is supplied to the cathode electrode to generate metal ions and the like from the arc evaporation source, thereby forming a hexagonal MoC 1-x layer (0.40 ⁇ x ⁇ 0.60). can do.
  • the substrate temperature is set to 400 to 450° C.
  • the substrate bias is set to ⁇ 50 V
  • the temperature is gradually raised to 450 toward the end of the formation.
  • °C to 550 °C the substrate bias is increased to -60 to -75V.
  • An apparatus used for the arc ion plating method includes, for example, AIP (trade name) manufactured by Kobe Steel, Ltd.
  • Ta has a high melting point and is difficult to melt. Therefore, a stable discharge could not be maintained in the physical vapor deposition method, and a TaC layer containing cubic TaC and having good film quality could not be formed.
  • the present inventors have found a method for stably producing a TaC 1-y layer containing hexagonal TaC 1-y and having good film quality.
  • a case of forming a TaC 1-y layer (0.40 ⁇ y ⁇ 0.60) containing 95% by mass or more of a hexagonal crystal structure by arc ion plating will be described below.
  • a TaC target is set in the arc-type evaporation source in the apparatus, the substrate (base material) temperature is set to 450 to 600° C., and the apparatus is evacuated. Subsequently, for example, one or both of argon gas and krypton gas are introduced to set the gas pressure in the apparatus to 1.0-3.0 Pa. Then, a negative bias voltage of 200 to 1000 V is applied to the substrate via a DC power supply to clean the surface of the substrate for 40 minutes. After that, an arc current of 80 to 200 A is supplied to the cathode electrode to generate metal ions and the like from the arc evaporation source, thereby forming a TaC 1-y layer (0.40 ⁇ y ⁇ 0.60).
  • the substrate temperature was set to 400 to 450° C. at the beginning of the formation of the TaC 1-y layer (thickness range of 0.1 ⁇ m or less), the substrate bias was set to ⁇ 50 V, and the temperature was gradually increased to 450° C. toward the end of the formation. °C to 550 °C, the substrate bias is increased to -60 to -75V.
  • An apparatus used for the arc ion plating method includes, for example, AIP (trade name) manufactured by Kobe Steel, Ltd.
  • the method for manufacturing a cutting tool according to the present embodiment preferably further includes a hard coating layer coating step before the first layer coating step.
  • the method for forming the hard coating layer is not particularly limited, and conventional methods can be used. Specifically, for example, the hard coating layer is formed by the PVD method described above.
  • the manufacturing method according to the present embodiment includes a base layer coating step of forming a base layer between the base material and the first layer, and a base layer coating step between the first layer and the hard coating layer. and a surface layer coating step of forming a surface layer on the first layer.
  • the other layers may be formed by conventional methods. Specifically, for example, the other layer may be formed by the PVD method described above.
  • the manufacturing method according to the present embodiment can appropriately include steps such as metal bombardment treatment, peening treatment, and surface treatment.
  • the metal bombardment treatment includes, for example, a method of subjecting Ti to cathode evaporation in an argon gas atmosphere and mixing the substrate surface to form a mixing layer.
  • Examples of surface treatment include polishing with abrasive grains and brush polishing. More specifically, there is a method of using a medium in which diamond powder is supported on an elastic material.
  • Sirius Z manufactured by Fuji Seisakusho Co., Ltd., etc. can be cited.
  • a cutting tool of the present disclosure comprises a substrate and a coating disposed on the substrate,
  • the coating comprises a MoC 1 -x layer made of a compound represented by MoC 1-x,
  • the x is 0.40 or more and 0.60 or less,
  • the compound represented by MoC 1-x is a cutting tool having a hexagonal crystal structure.
  • Said MoC 1-x layer preferably does not contain free carbon.
  • the MoC 1-x layer preferably has a film hardness of 2700 mgf/ ⁇ m 2 or more and 4200 mgf/ ⁇ m 2 or less.
  • said MoC 1-x layer is in contact with said substrate.
  • a cutting tool of the present disclosure comprises a substrate and a coating disposed on the substrate,
  • the coating comprises a TaC 1 -y layer made of a compound represented by TaC 1-y,
  • the y is 0.40 or more and 0.60 or less
  • the compound represented by TaC 1-y is a cutting tool containing 95% by mass or more of a hexagonal crystal structure.
  • the TaC 1-y layer does not contain free carbon.
  • the film hardness of the TaC 1-y layer is preferably 2700 mgf/ ⁇ m 2 or more and 4200 mgf/ ⁇ m 2 or less.
  • Said TaC 1-y layer is preferably in contact with said substrate.
  • Example 1 Manufacturing cutting tools ⁇ [Samples 1 to 26] ⁇ Base material preparation process> As a base material, JIS standard K10 cemented carbide (shape: JIS standard SEET13T3AGSN-L, CNMG120408N-EG) was prepared. Next, the base material is set at a predetermined position of an arc ion plating apparatus (manufactured by Kobe Steel, Ltd., trade name: AIP).
  • arc ion plating apparatus manufactured by Kobe Steel, Ltd., trade name: AIP
  • a MoC 1-x layer was formed on the substrate by an arc ion plating method.
  • the method is as follows. First, the MoC target is set in the arc-type evaporation source in the apparatus, the substrate (base material) temperature is set to 450 to 600° C., and the apparatus is evacuated. Subsequently, for example, one or both of argon gas and krypton gas are introduced to set the gas pressure in the apparatus to 1.0-3.0 Pa. Then, a negative bias voltage of 200 to 1000 V is applied to the substrate via a DC power supply to clean the surface of the substrate for 40 minutes.
  • an arc current of 80 to 200 A is supplied to the cathode electrode to generate metal ions and the like from the arc evaporation source, thereby forming a MoC 1-x layer (0.40 ⁇ x ⁇ 0.60).
  • the substrate temperature is set to 400 to 450° C.
  • the substrate bias is set to ⁇ 50 V
  • the temperature is gradually raised to 450 toward the end of the formation.
  • °C to 550 °C the substrate bias is increased to -60 to -75V.
  • the MoC 1-x layer was formed to the thickness described in the "thickness" column of "MoC 1-x layer” in Tables 1 and 2 by the above method.
  • AIP (trade name) manufactured by Kobe Steel, Ltd. was used as an apparatus used for the arc ion plating method.
  • ⁇ Base layer coating step> For samples (Samples 5 and 6) in which an underlayer was formed between the substrate and the MoC 1-x layer, the following procedure was performed on the substrate before the MoC 1-x layer coating step. A base layer was formed. First, a target containing the metal composition in the column of composition of the underlayer shown in Table 1 was set in the arc-type evaporation source of the arc ion plating apparatus. Next, the substrate temperature was set to 600° C. and the gas pressure in the apparatus was set to 1 Pa. In the case of the nitride underlayer (Sample 5), a mixed gas of nitrogen gas and argon gas was introduced.
  • ⁇ Hard coating layer coating step> For the samples (Samples 7 to 13, Samples 16 to 22, Samples 25, and 26) having a hard coating layer between the substrate and the MoC 1-x layer, the MoC 1-x layer coating step is performed.
  • a hard coating layer was previously formed on the substrate by the following procedure. First, a target containing the metal composition in the composition column of the hard coating layer shown in Tables 1 and 2 was set in the arc-type evaporation source of the arc ion plating apparatus. Next, the substrate temperature was set to 550° C. and the gas pressure in the apparatus was set to 4.0 Pa. As a reaction gas, nitrogen gas was introduced in the case of a nitride hard coating layer.
  • a mixed gas of nitrogen gas and methane gas was introduced as the reaction gas.
  • a mixed gas of oxygen gas and nitrogen gas was introduced as the reaction gas.
  • an arc current of 150 A was supplied to the cathode electrode.
  • the first unit layer and the second unit layer are laminated in order from the left side in Tables 1 and 2 until the desired thickness is obtained. to form a multi-layered structure.
  • a first unit layer made of TiAlBN with a thickness of 5 nm and a second unit layer made of TiSiN with a thickness of 5 nm are alternately laminated to form a multilayer structure with a thickness of 1.0 ⁇ m. did.
  • ⁇ Surface layer coating step> For the samples having a surface layer on the MoC 1-x layer (Sample 5, Sample 7, Sample 8, Sample 11, and Sample 12), MoC 1-x was coated in the following procedure after the MoC 1 -x layer coating step. A surface layer was formed on the layer. First, a target containing the metal composition in the surface layer composition column shown in Table 1 was set in an arc-type evaporation source of an arc ion plating apparatus. Next, the substrate temperature was set to 550° C. and the gas pressure in the apparatus was set to 4.0 Pa. As a reaction gas, a mixed gas of nitrogen gas and argon gas was introduced in the case of a nitride surface layer.
  • an arc current of 150 A was supplied to the cathode electrode.
  • a surface layer was formed up to the thickness shown in parentheses under "Surface layer" in Table 1 by generating metal ions and the like from an arc evaporation source by supplying an arc current.
  • Example 1-1 As a base material, the same base material as sample 1 was prepared. A MoC 1-x layer was formed on the substrate by an arc ion plating method. Specifically, the following method was used. First, the MoC target was set in the arc-type evaporation source of the arc ion plating device. Next, the substrate temperature was set to 390° C. and the gas pressure in the apparatus was set to 2 Pa. Argon gas was introduced as the gas. Then, while maintaining the substrate bias voltage at -50V, an arc current of 120A was supplied to the cathode electrode. A cutting tool was obtained by forming a MoC 1-x layer by generating metal ions and the like from an arc evaporation source by supplying an arc current.
  • Example 1-2 As a base material, the same base material as sample 1 was prepared. A MoC 1-x layer was formed on the substrate by an arc ion plating method. Specifically, the following method was used. First, the MoC target was set in the arc-type evaporation source of the arc ion plating device. Next, the substrate temperature was set to 620° C. and the gas pressure in the apparatus was set to 0.5 Pa. Argon gas was introduced as the gas. Then, while maintaining the substrate bias voltage at -40V, an arc current of 130A was supplied to the cathode electrode. A cutting tool was obtained by forming a MoC 1-x layer by generating metal ions and the like from an arc evaporation source by supplying an arc current.
  • sample 1-3 As a base material, the same base material as sample 1 was prepared. A cutting tool was obtained by forming a WC 0.56 layer on the substrate by the method described in Patent Document 1.
  • sample 1-4 As a base material, the same base material as sample 1 was prepared. A TiN layer (base layer) and an AlTiN layer were formed on the substrate in the above order. The TiN layer was formed by the same method as sample 5. The AlTiN layer was formed in the same manner as the first unit layer of Sample 12.
  • notations such as “TiAlBN (5 nm) / TiSiN (5 nm) multilayer structure (1.0 ⁇ m)” in “hard coating layer” mean that the hard coating layer is a 5 nm thick TiAlBN layer (first unit layer) and a thick It shows that it is formed of a multilayer structure (total thickness of 1.0 ⁇ m) in which TiSiN layers (second unit layers) with a thickness of 5 nm are alternately laminated.
  • the cutting tools of Samples 1 to 26 corresponding to Examples have a higher load, higher speed and higher efficiency than the cutting tools of Samples 1-1 to 1-4 corresponding to Comparative Examples. Also in machining, it was confirmed that the chipping resistance and wear resistance are excellent, and the tool life is long. From this, the cutting tools of Samples 1 to 24 corresponding to the examples are suitable for high-load, high-speed, high-efficiency machining applications, especially those requiring chipping resistance and wear resistance. It was suggested.
  • Example 2 ⁇ Manufacturing cutting tools ⁇ [Samples 1A to 25A] ⁇ Base material preparation process> As a base material, JIS standard K10 cemented carbide (shape: JIS standard SEET13T3AGSN-L, CNMG120408N-EG) was prepared. Next, the substrate was set at a predetermined position of an arc ion plating apparatus (manufactured by Kobe Steel, Ltd., trade name: AIP).
  • arc ion plating apparatus manufactured by Kobe Steel, Ltd., trade name: AIP
  • TaC 1-y layer was formed on the substrate by an arc ion plating method. Specifically, the following method was used. First, a TaC target is set in the arc-type evaporation source in the apparatus, the substrate (base material) temperature is set to 450 to 600° C., and the apparatus is evacuated. Subsequently, for example, one or both of argon gas and krypton gas are introduced to set the gas pressure in the apparatus to 1.0-3.0 Pa. Then, a negative bias voltage of 200 to 1000 V is applied to the substrate via a DC power supply to clean the surface of the substrate for 40 minutes.
  • an arc current of 80 to 200 A is supplied to the cathode electrode to generate metal ions and the like from the arc evaporation source, thereby forming a TaC 1-y layer (0.40 ⁇ y ⁇ 0.60).
  • the substrate temperature was set to 400 to 450° C. at the beginning of the formation of the TaC 1-y layer (thickness range of 0.1 ⁇ m or less), the substrate bias was set to ⁇ 50 V, and the temperature was gradually increased to 450° C. toward the end of the formation. °C to 550 °C, the substrate bias is increased to -60 to -75V.
  • a TaC 1-y layer was formed to the thickness described in the "Thickness" column of "TaC 1-y layer” in Tables 3 and 4 by the above method.
  • AIP (trade name) manufactured by Kobe Steel, Ltd. was used as an apparatus used for the arc ion plating method.
  • ⁇ Base layer coating step> For the samples (Sample 5A, Sample 6A) in which an underlayer was formed between the substrate and the TaC 1-y layer, the following procedure was performed on the substrate before performing the TaC 1-y layer coating step. A base layer was formed. First, a target containing the metal composition in the column of the composition of the underlayer shown in Table 3 was set in the arc-type evaporation source of the arc ion plating apparatus. Next, the substrate temperature was set to 600° C. and the gas pressure in the apparatus was set to 1 Pa. In the case of the nitride underlayer (Sample 5A), a mixed gas of nitrogen gas and argon gas was introduced.
  • ⁇ Hard coating layer coating step> For the samples having a hard coating layer between the substrate and the TaC 1-y layer (Samples 7A to 13A, Samples 17A to 25A), the following procedure was followed before performing the TaC 1-y layer coating step. to form a hard coating layer on the substrate.
  • a target containing the metal composition in the composition column of the hard coating layer shown in Tables 3 and 4 was set in the arc-type evaporation source of the arc ion plating apparatus.
  • the substrate temperature was set to 550° C. and the gas pressure in the apparatus was set to 4.0 Pa.
  • As the reaction gas a mixed gas of nitrogen gas and argon gas was introduced in the case of a nitride hard coating layer.
  • a mixed gas of nitrogen gas and methane gas was introduced as the reaction gas.
  • a mixed gas of oxygen gas and nitrogen gas was introduced as the reaction gas.
  • an arc current of 150 A was supplied to the cathode electrode.
  • the layers listed on the left side in Tables 3 and 4 are repeatedly laminated as the first unit layer and the second unit layer until the desired thickness is achieved. to form a multi-layered structure.
  • a first unit layer made of TiAlBN with a thickness of 6 nm and a second unit layer made of TiSiN with a thickness of 6 nm are alternately laminated to form a multilayer structure with a thickness of 1.0 ⁇ m. did.
  • ⁇ Surface layer coating step> For the samples having a surface layer on the TaC 1-y layer (Sample 5A, Sample 7A, Sample 8A, Sample 11A, and Sample 12A), the TaC 1-y layer was coated in the following procedure after the TaC 1 -y layer coating step. A surface layer was formed on the layer. First, a target containing the metal composition in the surface layer composition column shown in Table 3 was set in the arc-type evaporation source of the arc ion plating apparatus. Next, the substrate temperature was set to 550° C. and the gas pressure in the apparatus was set to 4.0 Pa. As a reaction gas, a mixed gas of nitrogen gas and argon gas was introduced in the case of a nitride surface layer.
  • sample 1-1A As a base material, the same base material as sample 1A was prepared. A TaC 1-y layer was formed on the substrate by an arc ion plating method. Specifically, the following method was used. First, a TaC target was set in an arc-type evaporation source of an arc ion plating apparatus. Next, the substrate temperature was set to 380° C. and the gas pressure in the apparatus was set to 1.5 Pa. Argon gas was introduced as the gas. Then, while maintaining the substrate bias voltage at -55V, an arc current of 120A was supplied to the cathode electrode. A cutting tool was obtained by forming a TaC 1-y layer by generating metal ions and the like from an arc evaporation source by supplying an arc current.
  • sample 1-2A As a base material, the same base material as sample 1A was prepared. A TaC 1-y layer was formed on the substrate by an arc ion plating method. Specifically, the following method was used. First, a TaC target was set in an arc-type evaporation source of an arc ion plating apparatus. Next, the substrate temperature was set to 610° C. and the gas pressure in the apparatus was set to 0.8 Pa. Argon gas was introduced as the gas. Then, while maintaining the substrate bias voltage at -43V, an arc current of 120A was supplied to the cathode electrode. A cutting tool was obtained by forming a TaC 1-y layer by generating metal ions and the like from an arc evaporation source by supplying an arc current.
  • sample 1-3A As a base material, the same base material as sample 1A was prepared. A cutting tool was obtained by forming a WC 0.56 layer on the substrate by the method described in Patent Document 1.
  • sample 1-4A As a base material, the same base material as sample 1A was prepared. A TiN layer (base layer) and an AlTiN layer were formed on the substrate in the above order. The TiN layer was formed by the same method as sample 5. The AlTiN layer was formed in the same manner as the first unit layer of sample 12A.
  • sample 1-5A As a base material, the same base material as sample 1 was prepared. A TaC 1-y layer was formed on the substrate by an arc ion plating method. Specifically, the following method was used. First, a TaC target was set in an arc-type evaporation source of an arc ion plating apparatus. Next, the substrate temperature was set to 420° C. and the gas pressure in the apparatus was set to 1 Pa. Argon gas was introduced as the gas. Then, while maintaining the substrate bias voltage at -69V, an arc current of 120A was supplied to the cathode electrode. A cutting tool was obtained by forming a TaC 1-y layer by generating metal ions and the like from an arc evaporation source by supplying an arc current.
  • composition y The composition y, the crystal structure, the content of hexagonal TaC 1-y , the presence or absence of free carbon, and the hardness of the TaC 1-y layer of each sample prepared as described above were measured. Since a specific measuring method is described in Embodiment 1, the description thereof will not be repeated. The results are "composition y”, “crystal structure”, “cubic crystal content (% by mass)", “free carbon” and “hardness (mgf/ ⁇ m 2 )" of the "TaC 1-y layer” in Tables 3 and 4. column.
  • the notation "hexagonal + cubic” in the "Crystal structure” column of Tables 3 and 4 means that hexagonal TaC 1-y and cubic TaC 1-y are mixed in the TaC 1-y layer. indicates that For example, sample 16A shows that 95% by weight of hexagonal TaC 1-y is present and the remainder (5% by weight) is cubic TaC 1-y .
  • the notation "no" in the "free carbon” column of Tables 3 and 4 indicates that the TaC 1-y layer does not contain free carbon, and the notation "present” indicates the TaC 1 -y layer. It shows that the y -layer contains free carbon.
  • notations such as “TiAlBN (6 nm) / TiSiN (6 nm) multilayer structure (1.0 ⁇ m)” in “hard coating layer” mean that the hard coating layer is a TiAlBN layer (first unit layer) with a thickness of 6 nm and a thickness It shows that it is formed of a multilayer structure (total thickness of 1.0 ⁇ m) in which TiSiN layers (second unit layers) of thickness 6 nm are alternately laminated.
  • the cutting tools of Samples 1A to 25A corresponding to the examples are compared to the cutting tools of Samples 1-1A to 1-5A corresponding to the comparative examples, even in high-speed and high-efficiency machining. It was confirmed that the chipping resistance and wear resistance are excellent, and that the tool life is long. From this, it can be seen that the cutting tools of Samples 1A to 25A corresponding to the examples are suitable for high-load, high-speed, high-efficiency machining applications, especially those requiring chipping resistance and wear resistance. It was suggested.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2022/005116 2021-05-20 2022-02-09 切削工具 Ceased WO2022244342A1 (ja)

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EP22804264.4A EP4306246A4 (en) 2021-05-20 2022-02-09 CUTTING TOOL
US18/286,558 US12605770B2 (en) 2021-05-20 2022-02-09 Cutting tool
JP2022542762A JP7305054B2 (ja) 2021-05-20 2022-02-09 切削工具
CN202280028187.9A CN117120192A (zh) 2021-05-20 2022-02-09 切削工具
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