WO2022210857A1 - 接合装置、接合システムおよび接合方法 - Google Patents
接合装置、接合システムおよび接合方法 Download PDFInfo
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- WO2022210857A1 WO2022210857A1 PCT/JP2022/015898 JP2022015898W WO2022210857A1 WO 2022210857 A1 WO2022210857 A1 WO 2022210857A1 JP 2022015898 W JP2022015898 W JP 2022015898W WO 2022210857 A1 WO2022210857 A1 WO 2022210857A1
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- head
- stage
- substrate
- holder
- substrates
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
Definitions
- the present invention relates to a joining device, a joining system and a joining method.
- a Z-axis elevation drive mechanism for vertically raising and lowering the head is arranged vertically above the head. It has a supported structure. In this case, the height from the ground on which the joining device is installed to the Z-axis lifting drive mechanism is increased. As a result, the vibration amplitude of the Z-axis elevation drive mechanism and the head becomes large, and the vibration amplitude of the head relative to the stage becomes large. Therefore, the alignment accuracy between the two objects to be bonded and the variation in the contact position when the two objects are brought into contact with each other increase, and the positional accuracy when the two objects to be bonded are bonded together decreases.
- the present invention has been made in view of the above reasons, and an object of the present invention is to provide a bonding apparatus, a bonding system, and a bonding method capable of bonding substrates with high positional accuracy.
- a bonding apparatus includes: A bonding apparatus for bonding a first substrate and a second substrate, a stage supporting the first substrate; a head arranged to face the stage and holding the second substrate on the side facing the stage; a head holder that holds the head on the side opposite to the stage side of the head and extends outside the head and the stage in a direction orthogonal to the direction in which the head and the stage are arranged; a plurality of holder support portions that support the head holder from each of a plurality of locations on the outer peripheral portion of the stage; a plurality of support portion driving portions that individually move the plurality of holder support portions in a first direction in which the head holder and the stage approach each other or in a second direction in which the head holder and the stage move away from each other; .
- the joining method according to the present invention includes: A bonding method for bonding a first substrate and a second substrate, comprising: a stage facing the stage for holding the first substrate in the head for holding the second substrate and holding the head on a side opposite to the stage side; A plurality of holder support portions for supporting the head holder extending outside the head and the stage in a direction orthogonal to the direction perpendicular to the direction perpendicular to the direction perpendicular to the direction perpendicular to the direction perpendicular to the direction of the head holder and the head holder extending to the outside of the stage from a plurality of locations on the outer peripheral portion of the stage.
- the plurality of holder support portions support the head holder from each of the plurality of locations on the outer peripheral portion of the stage, and the support portion driving portion moves the plurality of holder support portions in the first direction or the second direction. move in different directions.
- the distance of the stage and head from the ground can be shortened, so that the vibration amplitude of the stage and head can be reduced accordingly. Therefore, positional deviation due to vibration is reduced, so that the first substrate and the second substrate can be joined with high positional accuracy.
- FIG. 1 is a schematic configuration diagram of a substrate bonding system according to an embodiment of the present invention
- FIG. FIG. 10 is a schematic cross-sectional view of the bonding device and the conveying device according to the embodiment when some of the seal members are in the second state
- 4 is a schematic cross-section of a sealing member in a first state of a part of the bonding device and the conveying device according to the embodiment
- It is a schematic diagram of a seal drive part concerning an embodiment.
- 1 is a schematic front view of an activation processing device according to an embodiment
- FIG. 1 is a schematic front view of a joining device according to an embodiment
- FIG. 3 is a schematic plan view of a stage and a head according to an embodiment
- FIG. 4A and 4B are schematic cross-sectional views of a stage and a head according to an embodiment
- 1 is a schematic plan view of a joining device according to an embodiment
- FIG. 4 is a diagram for explaining a method of measuring the distance between the stage and the head according to the embodiment
- 7A and 7B are diagrams for explaining a method of adjusting the inclination of the head according to the embodiment
- FIG. 4 is a plan view of a stage and a stage base
- FIG. It is a figure for demonstrating the operation
- FIG. 4 is a diagram showing two alignment marks provided on one of two substrates to be bonded;
- FIG. 4 is a diagram showing two alignment marks provided on the other of two substrates to be bonded; It is a schematic diagram showing a photographed image of an alignment mark.
- FIG. 4 is a schematic diagram showing a state in which alignment marks are shifted from each other; 1 is a schematic diagram of part of a bonding apparatus according to an embodiment;
- FIG. 4 is a flow chart showing the flow of a joining method executed by the joining system according to the embodiment; It is a figure which shows a mode that a board
- FIG. 10 is a diagram showing how substrates are transferred from the transfer device of the bonding system according to the embodiment to the load lock section; It is a figure which shows a mode that a board
- FIG. 4 is a diagram showing how a substrate is transferred from a transfer device of the bonding system according to the embodiment to an activation processing device;
- FIG. 10 is a diagram showing how substrates are transferred from the transfer device of the bonding system according to the embodiment to the load lock section; It is a figure which shows a mode that a board
- FIG. 10 is a diagram showing how substrates are transferred from the transfer device of the bonding system according to the embodiment to the load lock section; It is a figure which shows a mode that a board
- FIG. 4 is a flow chart showing the flow of a joining process performed by the joining apparatus according to the embodiment
- FIG. 10 is a diagram showing how the bonding apparatus according to the embodiment brings the head closer to the stage; It is a figure which shows a mode that the joining apparatus which concerns on embodiment bends a board
- FIG. 10 is a schematic diagram showing a comparative example in which the head drive section is positioned vertically above the head;
- FIG. 10 is a schematic diagram showing a comparative example in which the head drive section is positioned vertically below the stage;
- 1 is a schematic diagram of a bonding apparatus according to an embodiment;
- FIG. FIG. 5 is a diagram showing frequency spectra of vibration amplitudes when the plate driving section of the vibration isolation unit according to the embodiment is operated and stopped. It is a schematic front view of the joining apparatus which concerns on a modification. It is a schematic front view of the joining apparatus which concerns on a modification.
- FIG. 9 is a flow chart showing a flow of a joining method executed by a joining system according to a modification; It is a schematic diagram of a part of a bonding apparatus according to a modification.
- FIG. 11 is a schematic front view of a part of a joining device and a conveying device according to a modification; It is a schematic plan view of the joining apparatus which concerns on a modification. It is a schematic plan view of the joining apparatus which concerns on a modification. It is a cross-sectional view of a part of a joining device according to a modification.
- the bonding apparatus includes a stage that holds a first substrate, a head that is arranged to face the stage and holds a second substrate on the side facing the stage, a head holder, and a plurality of holder supports. and a plurality of support drive units.
- the head holder holds the head on the side opposite to the stage side of the head, and extends outside the head and the stage in a direction perpendicular to the direction in which the head and the stage are arranged.
- the plurality of holder support portions support the head holder from each of the plurality of locations on the outer peripheral portion of the stage.
- the plurality of support section driving sections are arranged on the outer peripheral portion of the stage, and move the plurality of holder support sections in a first direction in which the head holder and the stage approach each other or in a second direction in which the head holder and the stage move away from each other. move it separately.
- the joining system includes introduction ports 811 and 812, an extraction port 813, transport devices 82, 84 and 86, a cleaning device 3, an activation processing device 2,
- the joining system also includes a first stand 42 that supports the joining apparatus 1 and a second stand 41 that is different from the first stand 42 and is spaced apart from the first stand 42 .
- the second pedestal 41 collectively supports the introduction ports 811 and 812, the extraction port 813, the transfer devices 82, 84 and 86, the cleaning device 3, the activation processing device 2, and the load lock units 83 and 85.
- the first pedestal 42 is, for example, an earthquake-resistant pedestal
- the second pedestal 41 is, for example, a pedestal provided with a grating vertically upward.
- the transport device 82 includes a transport robot 821 having an arm provided with a holding portion for holding a substrate at its tip.
- the transfer robot 821 can move along the direction in which the introduction ports 811 and 812 and the extraction port 813 are arranged, and can change the orientation of the tip of the arm by turning.
- the conveying device 82 is provided with a HEPA (High Efficiency Particulate Air) filter (not shown). As a result, the inside of the transport device 82 is in an atmospheric pressure environment with extremely few particles.
- HEPA High Efficiency Particulate Air
- the cleaning device 3 cleans the transported substrate while ejecting water, a cleaning liquid, or N2 gas.
- the cleaning apparatus 3 includes a stage (not shown) that supports a substrate, a rotary drive unit (not shown) that rotates the stage in a plane perpendicular to the vertical direction, water to which ultrasonic waves or megasonic vibrations are applied, and a cleaning nozzle (not shown) for ejecting cleaning liquid or N2 gas. Then, the cleaning apparatus 3 rotates the substrates W1 and W2 by rotating the stage while spraying water to which ultrasonic waves are applied from the cleaning nozzles onto the bonding surfaces of the substrates while rocking the cleaning nozzles in the radial direction of the substrates W1 and W2. Clean the entire joint surface.
- the cleaning device 3 spin-dries the substrates W1 and W2 by rotating the stage in a state in which water ejection from the cleaning nozzles is stopped.
- the washing device 3 is also provided with a HEPA filter (not shown), like the conveying device 82 .
- the load lock unit 83 includes a chamber 831, an exhaust pipe (not shown) communicating with the chamber 831, a vacuum pump (not shown) for discharging gas in the chamber 831 through the exhaust pipe, and an exhaust pipe. and an exhaust valve (not shown).
- the load lock unit 83 reduces the pressure in the chamber 831 by opening the exhaust valve and operating the vacuum pump to exhaust the gas in the chamber 831 to the outside of the chamber 831 through the exhaust pipe.
- the load lock unit 83 includes a gate 8331 arranged on the side of the transfer device 82 in the chamber 831, a gate 8321 arranged on the side of the transfer device 84 in the chamber 831, and gates 8331 and 8321 which open and close. Drive units 8332 and 8322 are provided.
- the load lock unit 83 also includes an alignment mechanism (not shown) that adjusts the postures of the substrates W1 and W2 within the chamber 831 .
- the gates 8331 and 8321 are provided so as to cover an opening (not shown) penetrating the chamber 831 on the carrier device 82 side and an opening (not shown) penetrating the carrier device 84 side, respectively.
- the load lock unit 83 includes a chamber 831, an exhaust pipe (not shown) communicating with the chamber 831, a vacuum pump (not shown) for discharging gas in the chamber 831 through the exhaust pipe, and an exhaust pipe. and an interposed exhaust valve (not shown).
- the load lock unit 83 reduces the pressure in the chamber 831 by opening the exhaust valve and operating the vacuum pump to exhaust the gas in the chamber 831 to the outside of the chamber 831 through the exhaust pipe.
- the load lock unit 83 includes a gate 8331 arranged on the side of the transfer device 82 in the chamber 831, a gate 8321 arranged on the side of the transfer device 84 in the chamber 831, and gates 8331 and 8321 which open and close.
- Drive units 8332 and 8322 are provided.
- the gate driving units 8332 and 8322 drive the gates 8331 and 8321 to open and close based on control signals input from the control unit 9 .
- the load lock section 85 also includes a chamber 851, an exhaust pipe (not shown), a vacuum pump (not shown), and an exhaust valve (not shown).
- the load lock unit 85 includes a gate 8531 provided on the side of the transfer device 82 in the chamber 851, a gate 8521 provided on the side of the transfer device 86 in the chamber 851, and gates 8531 and 8521 that open and close.
- Drive units 8532 and 8522 are provided. The gate driving units 8532 and 8522 drive the gates 8531 and 8521 to open and close based on control signals input from the control unit 9 .
- the transfer device 84 includes a chamber 843, an exhaust pipe (not shown) communicating with the chamber 843, a vacuum pump (not shown) for discharging gas in the chamber 831 through the exhaust pipe, and an exhaust pipe. It is a transfer means including an exhaust valve (not shown) and a transfer robot 841 for transferring the substrates W1 and W2. Further, the transfer device 84 maintains the inside of the chamber 831 in a decompressed state by opening the exhaust valve and operating the vacuum pump to exhaust the gas in the chamber 831 to the outside of the chamber 831 through the exhaust pipe.
- the transfer device 84 also includes a gate 8421 arranged on the bonding device 1 side in the chamber 843 and a gate driving section 8422 that drives the gate 8421 to open and close.
- the chamber 843 has an opening (not shown) penetrating on the bonding apparatus 1 side and an opening (not shown) penetrating on the load lock section 83 side.
- the gate 8421 is a second gate provided in a part of the chamber 843 so as to cover an opening (not shown) penetrating the chamber 843 on the bonding apparatus 1 side.
- the gate driver 8421 opens the gate 8421 when the transport robot 841 transports the substrates W1 and W2 into the bonding apparatus 1 . Further, an opening penetrating the chamber 843 on the side of the load lock portion 83 is covered with the gate 8321 of the load lock portion 83 .
- the transport robot 841 has an arm provided with a holding portion that holds a substrate at its tip, and can change the orientation of the tip of the arm by turning.
- the holding unit is, for example, an electrostatic chuck, and attracts and holds the substrates W1 and W2 on the side opposite to the bonding surface side.
- the transfer device 84 includes a frame 712 provided so as to surround the gate 8421 outside the chamber 843, and an annular frame 713 of the bonding apparatus 1 described later in the frame 712. and a sealing member 711 arranged over the entire circumference of the frame 712 on the side facing the .
- the frame 712 is a second frame that faces the frame 713 and is spaced apart from the frame 713 .
- a groove 712a into which the sealing member 711 is fitted is formed along the entire circumference of the surface of the frame 712 facing the frame 713 .
- the sealing member 711 is made of, for example, synthetic rubber in a tubular shape, and has a filling region S71 filled with a fluid such as air or gas.
- the sealing member 711 expands when the fluid is filled in the inner filling region S71, and as shown in FIG. A first state of sealing is assumed. On the other hand, the sealing member 711 assumes a second state in which the fluid in the inner filling region S72 is discharged and contracted to be separated from the frame 713 .
- the conveying device 84 fills the filling region S71 of the sealing member 711 with the gas or the gas filled in the filling region S71 so that the sealing member 711 is in either the first state or the second state.
- a seal drive unit 714 is provided for discharging the .
- the seal drive unit 714 includes an inlet/outlet pipe L70 communicating at one end with the filling area S71 inside the seal member 711, and a check valve connected to the other end of the inlet/outlet pipe L70. CV7, and an introduction pipe L71 having one end connected to the check valve CV7 and the other end connected to the tank T7.
- the seal drive unit 714 includes a compressor CPR7 that supplies gas into the tank T7, an electromagnetic valve V71 inserted in the introduction pipe L71, and a pressure gauge M71 that measures the pressure inside the introduction pipe L71.
- the seal drive unit 714 includes a discharge pipe L72 connected to the inlet/outlet pipe L70, a solenoid valve V72 inserted in the discharge pipe L72, and a pressure gauge M72 for measuring the pressure in the inlet/outlet pipe L70.
- the compressor CPR7 supplies gas to the tank T7 so that the pressure of the pressure gauge M71 is maintained at a preset pressure.
- the control unit 9 also controls the solenoid valves V71 and V72 based on the pressure measured by the pressure gauge M72.
- control unit 9 closes the solenoid valve V72 and opens the solenoid valve V71 to fill the filling region S71 of the seal member 711 with the gas, thereby closing the seal member 711 to the first position.
- the second state is changed to the first state.
- control unit 9 closes the solenoid valve V71 and opens the solenoid valve V72 to discharge the gas filled in the filling region S71 of the seal member 711 to the outside of the seal member 711.
- the sealing member 711 is changed from the first state to the second state.
- the transfer device 86 like the transfer device 84, includes a chamber 863, an exhaust pipe (not shown), a vacuum pump (not shown), an exhaust valve (not shown), a transfer robot 861, Prepare.
- the transfer device 86 also includes a gate 8621 arranged on the activation processing device 2 side in the chamber 863 and a gate driving section 8622 that drives the gate 8621 to open and close.
- the chamber 863 has an opening (not shown) penetrating to the activation processing device 2 side and an opening (not shown) penetrating to the load lock section 85 side.
- the gate 8621 is arranged so as to cover an opening (not shown) that penetrates the chamber 861 on the side of the activation processing device 2 .
- the transport robot 861 has an arm provided with a holding portion for holding a substrate at its tip, and can change the direction of the tip of the arm by turning.
- the holding unit is, for example, an electrostatic chuck, and attracts and holds the substrates W1 and W2 on the side opposite to the bonding surface side.
- the activation processing apparatus 2 performs activation processing for activating the bonding surface of the substrate by performing at least one of reactive ion etching using nitrogen gas and nitrogen radical irradiation on the bonding surface.
- the activation processing device 2 is a device for generating inductively coupled plasma (ICP), and as shown in FIG. and a high-frequency power source 216 that supplies a high-frequency current to the induction coil 215 .
- the plasma chamber 213 is made of quartz glass, for example.
- the activation processing device 2 also has a nitrogen gas supply section 220A and an oxygen gas supply section 220B.
- the nitrogen gas supply section 220A has a nitrogen gas reservoir 221A, a supply valve 222A, and a supply pipe 223A.
- the oxygen gas supply section 220B has an oxygen gas reservoir 221B, a supply valve 222B, and a supply pipe 223B. Substrates W1 and W2 are placed on the stage 210 .
- Processing chamber 212 communicates with plasma chamber 213 .
- the processing chamber 212 is connected to a vacuum pump 201a through an exhaust pipe 201b and an exhaust valve 201c.
- the activation processing apparatus 2 opens the exhaust valve 201c and activates the vacuum pump 201a to exhaust the gas in the processing chamber 212 to the outside of the processing chamber 212 through the exhaust pipe 202b. to reduce (depressurize).
- the high-frequency power supply 216 one that supplies a high-frequency current of, for example, 27 MHz to the induction coil 215 can be adopted. Then, when a high-frequency current is supplied to the induction coil 215 while N 2 gas is introduced into the plasma chamber 213 , plasma PLM is formed within the plasma chamber 213 .
- a structure without a trap plate between the plasma chamber 213 and the processing chamber 212 may be employed.
- a plasma PLM is generated in the plasma chamber 213 from the induction coil 215, the high-frequency power supply 216, and the nitrogen gas supply unit 220A, and N2 radicals in the plasma are supplied to the bonding surfaces of the substrates W1 and W2 supported by the stage 210.
- a plasma generation source is constructed.
- the activation processing device 2 an example of an ICP generating device including an induction coil 215 and a high frequency power source 216 has been described, but the present invention is not limited to this, and a plasma chamber can be used instead.
- a plate electrode placed outside the plasma chamber 213, a high-frequency power source electrically connected to the plate electrode, and a trap plate placed between the plasma chamber 213 and the processing chamber 212 to trap ions in the plasma.
- the bias application unit 217 is a high frequency power supply that applies a high frequency bias to the substrates W1 and W2 supported by the stage 210.
- a sheath region is generated in the vicinity of the bonding surfaces of the substrates W1 and W2 where ions having kinetic energy repeatedly collide with the substrates W1 and W2. do. Then, the bonding surfaces of the substrates W1 and W2 are etched by ions having kinetic energy existing in the sheath region.
- the bonding apparatus 1 bonds together the substrates W1 and W2 whose bonding surfaces have been cleaned by the cleaning apparatus 3 after being activated by the activation processing apparatus 2 .
- the bonding apparatus 1 includes a chamber 120, a stage 141, a head 142, a head holder 111, three holder support portions 1471, a connection portion 145, a lock mechanism 149, and three support portions.
- a part driving section 146 , a stage driving section 143 , an air cylinder 186 , a distance measuring section 185 , substrate heating sections 1911 and 1912 , a position measuring section 150 and a vibration isolation unit 160 are provided.
- the bonding apparatus 1 includes a top plate 114 that collectively supports the chamber 120, the stage 141, the head 142, the head holder 111, the holder support section 1471, and the support section driving section 146, the vibration isolation unit 160, and the first mount 42. a base 116 mounted thereon.
- the stage 141 and the head 142 are arranged in the chamber 120 such that they face each other in the vertical direction and the stage 141 is positioned on the -Z direction side of the head 142 .
- the stage 141 and the head 142 are made of translucent material such as translucent glass.
- Stage 141 and head 142 are provided with electrostatic chucks 1411 and 1412 for holding substrates W1 and W2, as shown in FIG. 6A.
- the electrostatic chucks 1411 and 1412 are provided in regions facing the peripheral portions of the substrates W1 and W2 on the stage 141 and the head 142 while the substrates W1 and W2 are held by the stage 141 and the head 142. , W2.
- Each of the electrostatic chucks 1411 and 1412 has an annular shape, and has a terminal electrode arranged along the circumferential direction of the stage 141 and the head 142, and a straight terminal electrode electrically connected to the terminal electrode at the base end. and a plurality of electrodes.
- the terminal electrode and the plurality of electrodes are made of a transparent conductive film containing a transparent conductive material such as ITO.
- the electrostatic chucks 1411 and 1412 attract and hold the substrates W1 and W2 while a voltage is applied by a chuck drive unit (not shown).
- stage 141 and the head 142 are provided with concave portions 141c and 142c inside the electrostatic chucks 1411 and 1412, respectively, and through holes 141b and 142b which are circular in plan view are provided in their central portions. ing.
- stage 141 and head 142 are fixed to bases 183 and 184, respectively, as shown in FIG. 6B.
- the stage 141 and the head 142 are provided with concave portions 141c and 142c inside the electrostatic chucks 1411 and 1412, respectively, and circular through holes 141b and 142b in plan view are provided in the central portions thereof.
- Through holes 183b and 184b are provided in portions of the bases 183 and 184 corresponding to the through holes 141b and 142b.
- the base 183 is fixed to the top plate 114 via a slider (not shown) slidable in the X-axis direction and the Y-axis direction.
- the base 183 is formed with an opening 1831a for transmitting light emitted from the position measuring section 150 arranged on the ⁇ Z direction side of the base 183 to the stage 141 side.
- a pressing mechanism 181 for pressing the central portion of the substrate W1 is fixed to the base 183, and a pressing mechanism 182 for pressing the central portion of the substrate W2 is fixed to the base 184.
- the pressing mechanism 181 includes a pressing portion 1811 that can protrude toward the head 142 through the through hole 141b of the stage 141 and the through hole 183b of the base 183, and a pressing driving portion 1812 that drives the pressing portion 1811.
- the pressing mechanism 182 also has a pressing portion 1821 that can protrude toward the stage 141 through the through hole 142 b of the head 142 and the through hole 184 b of the base 184 , and a pressing driving portion 1822 that drives the pressing portion 1821 .
- the pressing drive units 1812 and 1822 have voice coil motors, for example.
- the chamber 120 maintains the region S1 where the substrates W1 and W2 are arranged at a degree of vacuum equal to or higher than a preset reference degree of vacuum.
- Chamber 120 is connected to a vacuum pump (not shown) via an exhaust pipe (not shown) and an exhaust valve (not shown).
- the exhaust valve is opened and the vacuum pump is operated, the gas inside the chamber 120 is exhausted to the outside of the chamber 120 through the exhaust pipe, and the inside of the chamber 120 is maintained in a reduced pressure atmosphere.
- the air pressure (degree of vacuum) in the chamber 120 can be adjusted by adjusting the exhaust amount by varying the opening/closing amount of the exhaust valve.
- a part of the chamber 120 is provided with two windows 121 that are used by the position measuring unit 150 to measure the relative position between the substrates W1 and W2.
- a part of the chamber 120 is provided with openings (not shown) for inserting and removing the substrates W1 and W2. Then, as shown in FIG. 7, a gate 1211 is provided on the +X direction side of the chamber 120 and covers the opening of the chamber 120 .
- the head holder 111 is, for example, a triangular plate in plan view.
- the head holder 111 holds the head 142 and the base 184 via the support member 112 on the opposite side of the head 142 to the stage 141 side, that is, on the +Z direction side.
- the support member 112 is inserted through a through hole 120b provided in the peripheral wall of the chamber 120 on the +Z direction side.
- a bellows 113 seals the area between the outer circumference of the through hole 120 b in the peripheral wall of the chamber 120 and the outer circumference of the fixing portion of the support member 112 in the head holder 111 .
- a pressure sensor 148 is interposed between the base 184 and the support member 112 to measure the force acting on the head 142 in the direction of approaching the stage 141 .
- the head holder 111 extends outside the head 142 and the stage 141 in the direction in which the head 142 and the stage 141 are arranged, that is, in a direction orthogonal to the Z-axis direction.
- the three holder support parts 1471 respectively support the three corners of the head holder 111 from three positions on the outer circumference of the stage 141, as shown in FIG. As shown in FIG. 5, each of the three holder support portions 1471 is inserted through a cylindrical guide portion 1472 fixed to the top plate 114, and is supported by the support portion driving portion 146 at the end on the -Z direction side. ing.
- the connecting portion 145 is arranged at the end of each of the three holder support portions 1471 on the side of the head holder 111 , that is, the end portion on the +Z direction side, and the head holder 111 can swing freely with respect to the three holder support portions 1471 .
- Each of the three holder support portions 1471 is connected to the head holder 11 in this state.
- the connecting portion 145 includes a hemispherical engaging member 1451 provided at the end of each of the three holder support portions 1471 on the +Z direction side, and a hemispherical engaging member 1451 provided on the -Z direction side of the head holder 111. and an engaged member 1452 having a recessed portion.
- the lock mechanism 149 is provided at a portion of the head holder 111 corresponding to the connection portion 145 , and locks the head holder 111 to the three holder support portions 1471 to lock the head holder 111 to the three holder support portions 1471 . It can take either an unlocked state in which it is maintained in a swingable state. Here, when the lock mechanism 149 is in the unlocked state, the head holder 111 is susceptible to vibration. Further, when the substrate W2 is pressed against the substrate W1 by moving the holder support portion 1471 in the -Z direction, only a pressure equivalent to the weight of the head holder 111 can be applied. On the other hand, by setting the lock mechanism 149 to the locked state and driving the holder support portion 1471 in the ⁇ Z direction by the support portion driving portion 146, the substrate W2 can be pressed against the substrate W1.
- the three support drive units 146 are arranged outside the chamber 120 on the outer periphery of the stage 141 .
- Each support drive section 146 has a ball screw 1461 , an actuator 1462 that drives the ball screw 1461 in the Z-axis direction, and a support member 1463 that is fixed to the top plate 114 and supports the actuator 1462 .
- the +Z-direction end of the ball screw 1461 abuts the -Z-direction end of the holder support portion 1471, and when the actuator 1462 moves the ball screw 1461 up and down in the Z-axis direction, the holder moves up and down.
- the support portion 1471 moves in the Z-axis direction.
- the three support section driving sections 146 move the three holder support sections 1471 in the first direction in which the head holder 111 and the stage 141 approach each other, that is, in the -Z direction, or in the direction in which the head holder 111 and the stage 141 approach each other. They are separately moved in the second direction away from each other, ie, the +Z direction. Also.
- the three support section drive sections 146 move the three holder support sections 1471 separately in the Z-axis direction, thereby moving three positions on the periphery of the stage 141 and three positions on the periphery of the stage 141 in the head 142 . Adjust the distance between the three points facing each other.
- the support driving section 146 moves one holder support section 1471 in the +Z direction as indicated by an arrow AR31, and moves the other holder support section 1471 as shown in FIG.
- the tilt of the head holder 111 can be adjusted by moving one holder support 1471 in the -Z direction as indicated by an arrow AR32.
- the distance measuring unit 185 is, for example, a laser rangefinder, and measures the distance between the stage 141 and the head 142 and the substrate W1 held on the stage 141 without contacting the stage 141 and the head 142 . and the distance from the substrate W2 held by the head 142 are measured.
- the distance measuring unit 185 may have, for example, a laser interferometer.
- Distance measuring units 185 are provided at a plurality of locations on the periphery of base 183 . The distance measuring unit 185 measures the reflected light from the ⁇ Z direction side surface of the head 142 and the +Z direction side surface of the stage 141 when laser light is irradiated from the lower side of the stage 141 toward the head 142 .
- the distance between the stage 141 and the head 142 is measured from the difference between .
- the distance measurement unit 185 has three positions P11, P12, and P13 on the top surface of the stage 141 and three positions on the bottom surface of the head 402 facing the positions P11, P12, and P13 in the Z direction. Distances between sites P21, P22, and P23 are measured. Further, the distance measuring unit 185 measures the distance between the substrates W1 and W2 and the stage 141 or the head 142 which does not hold the substrates W1 and W2 while the head 142 holds the substrate W2 or the stage 141 holds the substrate W1. You can measure the distance between At this time, the distance measuring unit 185 irradiates laser light from the side of the stage 141 or the head 142 that does not hold the substrates W1 and W2.
- the stage drive unit 143 moves the stage 141 in the XY directions and rotates it around the Z axis.
- the stage driving portion 143 is inserted from the outside of the chamber 120 through a through hole 120c provided in the peripheral wall of the chamber 120, and has a pressing bar 1435 with a distal end contacting the side surface of the base 183 and a proximal end provided with a flange.
- the stage 141 is moved by pressing the base 183 with the pressing bar 1435 .
- the stage drive unit 143 is arranged outside the chamber 120, and includes a ball screw 1431, an actuator 1432 that drives the ball screw 1431 in the X-axis direction or the Y-axis direction, and a support member 1433 that is fixed to the chamber 120 and supports the actuator 1432. and have Here, the ball screw 1431 is in contact with the flange of the pressing bar 1435 . Furthermore, the stage driving section 143 has a bellows 1434 for sealing the area between the outer periphery of the through hole 120c of the peripheral wall of the chamber 120 and the periphery of the flange of the pressing bar 1435. FIG.
- the air cylinder 186 is inserted from the outside of the chamber 120 through a through hole 120c provided in the peripheral wall of the chamber 120, and has a pressure bar 1865 with a distal end contacting the side surface of the base 183 and a proximal end provided with a flange. A pressing bar 1865 urges the base 183 away from the air cylinder 186 .
- the air cylinder 186 includes a piston rod 1861 having a piston (not shown) at its proximal end, a cylinder tube 1862 housing the piston, a support member 1863 fixed to the chamber 120 and supporting the cylinder tube 1862, , and the pressure of the air filled in the region opposite to the piston rod 1861 side in the piston and cylinder tube 1862 is applied to the piston rod 1861 .
- the tip of the piston rod 1861 is in contact with the flange of the pressing bar 1865 .
- the air cylinder 186 has a bellows 1864 for sealing the area between the outer periphery of the through hole 120c in the peripheral wall of the chamber 120 and the periphery of the flange of the pressing bar 1865.
- the stage driving section 143 is installed at three locations on the outer circumference of the chamber 120, and the air cylinders 1861 are installed at three locations facing the stage driving section 143 on the outer circumference of the chamber 120. It is Then, as shown in FIG. 9B, the stage driving section 143B arranged on the +X direction side and the +Y direction side of the base 183 moves the pressing bar 1435 toward the inside of the chamber 120 as indicated by the arrow AR23, Suppose that the stage driving section 143A arranged on the ⁇ X direction side and the +Y direction side of the table 183 moves the pressing bar 1435 to the outside of the chamber 120 as indicated by the arrow AR22.
- the air cylinder 186A rotates clockwise by pressing the stage 141 as indicated by an arrow AR21.
- the position measuring unit 150 measures the amount of positional deviation between the substrate W1 and the substrate W2 in directions perpendicular to the vertical direction (the XY direction and the direction of rotation about the Z axis).
- the position measuring section 150 has a first imaging section 151 and a second imaging section 152 .
- the first imaging unit 151 and the second imaging unit 152 are arranged on the side of the stage 141 opposite to the side on which the substrate W1 is held. Also, the first imaging section 151 and the second imaging section 152 are each fixed to the top plate 114 by the imaging section support section 115 .
- the first imaging unit 151 and the second imaging unit 152 each have an imaging device (not shown) and a coaxial illumination system (not shown).
- a light source of the coaxial illumination system a light source that emits light (for example, infrared light) that passes through the substrates W1 and W2, the stage 141, and the window 121 provided in the chamber 120 is used.
- the substrate W1 is provided with two alignment marks MK1a and MK1b
- the substrate W2 is provided with two alignment marks MK2a and MK2b.
- the bonding apparatus 1 aligns the substrates W1 and W2 while recognizing the positions of the alignment marks MK1a, MK1b, MK2a and MK2b provided on the substrates W1 and W2 by the position measuring unit 150. Run. More specifically, the bonding apparatus 1 first performs rough alignment operations (rough alignment operation) is performed to face the two substrates W1 and W2.
- the bonding apparatus 1 simultaneously recognizes the alignment marks MK1a, MK2a, MK1b, and MK2b provided on the two substrates W1 and W2 by the position measuring unit 500, and performs a more precise alignment operation (fine alignment operation). .
- the light emitted from the light source of the coaxial illumination system of the first imaging section 151 travels upward and passes through part or all of the window section 121, the stage 141 and the substrates W1 and W2.
- Light transmitted through part or all of the substrates W1 and W2 is reflected by the alignment marks MK1a and MK2a of the substrates W1 and W2, travels downward, passes through the stage 141 and the window 121, and reaches the first imaging unit 151. Incident into the imaging device.
- Light emitted from the light source of the coaxial illumination system of the second imaging unit 502 also travels upward and passes through part or all of the window 121, the stage 141, and the substrates W1 and W2.
- the light transmitted through part or all of the substrates W1 and W2 is reflected by the alignment marks MK1a and MK2a of the substrates W1 and W2, travels downward, passes through the stage 141 and the window 121, and reaches the second imaging unit 152. Incident into the imaging device.
- the position measurement unit 150 obtains the photographed image GAa including the alignment marks MK1a and MK2a of the two substrates W1 and W2 and the alignment marks MK1b and MK2b of the two substrates W1 and W2.
- a photographed image GAb including The photographing operation of the photographed image GAa by the first imaging unit 151 and the photographing operation of the photographed image GAb by the second imaging unit 152 are performed substantially simultaneously.
- a light source may be provided in the head 142 and the light from the light source may be introduced from the head 142 side to the first imaging section 151 and the second imaging section 152 .
- the substrate heating units 1911 and 19122 are, for example, electric heaters, and are provided on the stage 141 and the head 142, respectively.
- the substrate heating units 1911 and 1912 heat the substrates W1 and W2 by transferring heat to the substrates W1 and W2 held by the stage 141 and the head 142 . Further, by adjusting the amount of heat generated by the substrate heating units 1911 and 1912, the temperatures of the substrates W1 and W2 and their bonding surfaces can be adjusted.
- the substrate heating units 1911 and 1912 are connected to a heating unit driving unit (not shown), and the heating unit driving unit heats the substrate based on a control signal input from the control unit 9 shown in FIG. By supplying current to the portions 1911 and 1912, the substrate heating portions 19111 and 1912 are made to generate heat.
- the vibration isolation unit 160 is a so-called active vibration isolation table and is interposed between the top plate 114 and the base 116. As shown in FIG. 12, the vibration isolation unit 160 has a vibration isolation mechanism, is fixed to the base 116, and has a plate support portion 162 that supports the top plate 114 on the +Z direction side so as to be movable in the vertical and horizontal directions. , a plate drive unit 163 , a vibration detection unit 164 , and a vibration isolation control unit 169 that controls the plate drive unit 163 .
- the plate support portion 162 has a vibration isolation mechanism using, for example, air springs or coil springs, and supports the top plate 114 so as to be movable in the vertical and horizontal directions.
- Vibration detector 164 detects vibration transmitted to top plate 114 .
- the plate driving portion 163 is composed of a hydraulic actuator, an electromagnetic actuator, a pneumatic actuator, a piezo actuator, a linear actuator, or the like, and moves the top plate 114 relative to the plate support portion 162. A force acting in the direction is applied to the top plate 114 .
- the vibration isolation control section 169 controls the plate driving section 163 so as to reduce the vibration transmitted to the top plate 114 . Specifically, the vibration isolation control section 169 controls the plate driving section 163 based on the vibration detected by the vibration detection section 164 so that the top plate 114 moves so as to cancel out the vibration.
- the bonding apparatus 1 also includes a frame body 713 provided to surround the gate 1211 outside the chamber 120 and a gate driving section 1212 that drives the gate 1211, as shown in FIG. 2A.
- the frame 713 is a first frame arranged to face the frame 712, and when the seal member 711 of the conveying device 84 is in the first state, the seal member 711 is in close contact with the entire circumference of the frame 713. becomes.
- the chamber 120 is opened to the atmosphere each time the substrates W1 and W2 are transferred into the chamber 120 of the bonding apparatus 1, it will take time to increase the degree of vacuum in the chamber 120 again after the substrates W1 and W2 are transferred. I need.
- the substrate W1 is transferred from the load lock unit 83 and the chamber 843 of the transfer apparatus 84 to the chamber 120 of the bonding apparatus 1 . , W2.
- the joining system according to the present embodiment is configured to include the frames 712 and 713 and the sealing member 711 as described above.
- control unit 9 is, for example, a control system having a personal computer, and has a CPU (Central Processing Unit) and a memory.
- the memory stores programs executed by the CPU.
- the control unit 9 converts measurement signals input from the pressure sensor 148 and the position measurement unit 150 into measurement information and acquires the measurement information. Further, the control unit 9 converts the captured image signal input from the first imaging unit 151 and the second imaging unit 152 into captured image information and acquires the captured image information. Furthermore, the control unit 9 outputs control signals to each of the supporting unit driving unit 146, the stage driving unit 143, the chuck driving unit, the pressing driving units 1812 and 1822, and the heating unit driving unit of the bonding apparatus 1, thereby controlling these operations. Control. As shown in FIG.
- the control unit 9 determines the positional deviation amount dxa between the pair of alignment marks MK1a and MK2a provided on the substrates W1 and W2 based on the photographed image GAa acquired from the first imaging unit 501. , dya. Note that FIG. 11B shows a state in which a pair of alignment marks MK1a and MK2a are displaced from each other. Similarly, based on the captured image GAb acquired from the second imaging unit 502, the control unit 9 determines the positional deviation amounts dxb and dyb between the other pair of alignment marks MK1b and MK2b provided on the substrates W1 and W2.
- the control unit 9 rotates about the X direction, Y direction and Z axis based on the positional deviation amounts dxa, dya, dxb and dyb of these two sets of alignment marks and the geometrical relationship between the two sets of marks. Relative positional deviation amounts dx, dy, and d ⁇ of the two substrates W1 and W2 in the direction are calculated. Then, the controller 9 moves the head 402 in the X and Y directions or rotates it around the Z axis so as to reduce the calculated positional deviation amounts dx, dy, and d ⁇ .
- the bonding apparatus 1 performs an alignment operation for correcting the positional deviation amounts dx, dy, and d ⁇ of the two substrates W1 and W2 in the horizontal direction.
- the control unit 9 sends control signals to the activation processing device 2, the conveying devices 82, 84, 86, the cleaning device 3, the gate driving units 8332, 8322, 8532, 8522, 8622, 8422, 1212, and the seal driving unit 714. These operations are controlled by output.
- substrates W1 and W2 are arranged in the introduction ports 811 and 812 in advance.
- substrates W1 and W2 include Si substrates, glass substrates, oxide substrates (eg, silicon oxide (SiO 2 ) substrates, alumina substrates (Al 2 O 3 ), etc.), nitride substrates (eg, silicon nitride (SiN ) or aluminum nitride (AlN)).
- At least one of the substrates W1 and W2 may have a metal portion and an insulating film exposed on the joint surface.
- at least one of the substrates W1 and W2 may have an exposed insulating film formed by depositing oxide or nitride on the bonding surface.
- the substrate W1 is a glass substrate or an oxide substrate
- the substrate W2 is a Si substrate or a nitride substrate.
- the substrate W2 held by the head 142 in the bonding apparatus 1 is arranged in the introduction port 811, and the substrate W1 placed on the stage 141 in the bonding apparatus 1 is arranged in the introduction port 812, for example.
- the bonding system transports the substrates W1 and W2 from the introduction ports 811 and 812 to the load lock section 85 (step S1).
- the transfer robot 821 takes out the substrate W2 from the introduction port 811 as indicated by the arrow AR11 in FIG. 14A.
- the transport robot 821 moves to a position where the substrate W2 is loaded into the load lock section 85 of the transport device 82 while holding the substrate W2, as indicated by an arrow AR12 in FIG. 14A.
- the transfer robot 821 takes out the substrate W1 from the introduction port 812 and then stands by while holding the substrate W1.
- the gate 8531 of the load lock section 85 is opened, and the transfer robot 821 turns so that the tip of the arm faces the load lock section 85 side as indicated by the arrow AR13 in FIG. 14A.
- the transfer robot 821 inserts the tip of the arm into the chamber 851 of the load lock section 85 by extending the arm as indicated by the arrow AR14 in FIG. 14B.
- the substrates W1 and W2 are transferred from the tips of the arms to the stage provided in the chamber 851 of the load lock section 85 .
- the transfer robot 821 contracts its arm as indicated by the arrow AR15 in FIG. 15A.
- the load lock unit 85 reduces the pressure in the chamber 851 .
- the bonding system transports the substrates W1 and W2 from the load lock section 85 to the activation processing apparatus 2 (step S2).
- the transfer robot 861 extends the arm with the tip of the arm facing the load lock section 85 side.
- the transport robot 861 retracts the arm as indicated by the arrow AR16 to move the substrate W1.
- W 2 are removed from the chamber 851 .
- the load lock section 85 closes the gate 8521 .
- the transfer robot 861 turns so that the tip of the arm faces the activation processing device 2 side, as indicated by the arrow AR17 in FIG. 15B.
- the transport device 86 then opens the gate 8621 .
- the transfer robot 861 extends the arm and inserts the tip of the arm into the activation processing device 2 .
- the substrates W1 and W2 are transferred from the tip of the arm of the transfer robot 861 to the stage 210 (see FIG. 4) of the activation processing apparatus 2.
- FIG. Thereafter, after the transport robot 861 contracts the arm, the transport device 86 closes the gate 8621 .
- the activation processing apparatus 2 performs reactive ion etching using nitrogen gas and nitrogen radical irradiation on at least one of the bonding surfaces of the substrates W1 and W2 to be bonded to each other.
- An activation treatment step for activating the joint surface is performed by performing at least one of (step S3).
- the activation processing apparatus 2 has different processing sequences depending on the types of substrates whose bonding surfaces are to be activated.
- the activation processing apparatus 2 first opens the supply valve 222A shown in FIG. N 2 gas is introduced into the chamber 212 through .
- the activation processing apparatus 2 applies a high frequency bias to the substrates W1 and W2 placed on the stage 210 by the bias applying section 217 while stopping the supply of the high frequency current from the high frequency power supply 216 to the induction coil 215. apply.
- the bonding surface of the substrate W1 is subjected to reactive ion etching (RIE) using N2 gas.
- RIE reactive ion etching
- the activation processing apparatus 2 starts supplying high-frequency current from the high-frequency power supply 216 to the induction coil 215 to generate plasma with N 2 gas.
- the activation processing apparatus 2 stops application of the high-frequency bias to the substrate W1 by the bias application unit 217.
- FIG. In this manner, the bonding surface of the substrate W1 is irradiated with N2 radicals.
- the activation processing apparatus 2 when activating the bonding surface of the substrate W2, that is, the Si or nitride substrate, the activation processing apparatus 2 first opens the supply valve 222B, thereby supplying oxygen gas from the oxygen gas reservoir 221B to the chamber 212 through the supply pipe 223B. introduce O2 gas into the Next, the activation processing apparatus 2 applies a high frequency bias to the substrate W2 placed on the stage 210 by the bias applying section 217 while stopping the supply of the high frequency current from the high frequency power supply 216 to the induction coil 215. . Thereby, reactive ion etching (RIE) using O 2 gas is performed on the bonding surface of the substrate W2.
- RIE reactive ion etching
- the activation processing apparatus 2 closes the supply valve 622B to stop the supply of O 2 gas from the O 2 gas reservoir 621B into the chamber 612, thereby exhausting the O 2 gas in the chamber 612.
- the activation processing apparatus 2 introduces N 2 gas into the chamber 212 from the nitrogen gas reservoir 221A through the supply pipe 223A by opening the supply valve 222A.
- the activation processing apparatus 2 starts supplying a high frequency current from the high frequency power supply 216 to the induction coil 215 to generate plasma with N 2 gas.
- the activation processing apparatus 2 stops application of the high-frequency bias to the substrate W2 by the bias application unit 217.
- the bonding surface of the substrate W2 is irradiated with N2 radicals.
- the transport device 86 then transports the substrates W1 and W2 from the activation processing device to the load lock unit 85 (step S4).
- the transfer device 86 opens the gate 8621
- the transfer robot 861 extends its arm and inserts the tip of the arm into the activation processing device 2 .
- the substrates W1 and W2 are transferred from the stage 210 to the tip of the arm.
- the transport robot 861 retracts the arm to take out the substrates W1 and W2 from the activation processing apparatus 2 as indicated by the arrow AR19 in FIG. 16A.
- the gate 8521 of the load lock section 85 is opened.
- the transfer robot 861 extends the arm and inserts the tip of the arm into the chamber 851 of the load lock section 85 .
- the substrates W1 and W2 are transferred from the tips of the arms to the stage in the chamber 851.
- the transport robot 861 retracts its arm as indicated by arrow AR21 in FIG. 16B, and the load lock section 85 closes the gate 8521 .
- the transport device 82 transports the substrates W1 and W2 from the load lock section 85 to the cleaning device 3 (step S5).
- the transfer robot 821 extends the arm with the tip end of the arm facing the load lock section 85 side, and moves the tip end of the arm toward the load lock section 85 . Insert into chamber 851 .
- the substrates W1 and W2 are transferred from the stage in the chamber 851 to the tip of the arm of the transfer robot 821 .
- the transport robot 821 retracts the arms to take out the substrates W1 and W2 from the load lock section 85 as indicated by the arrow AR22 in FIG.
- the transport robot 821 turns so that the tip of the arm faces the cleaning device 3 side, as indicated by an arrow AR23. Subsequently, the transport robot 821 moves to a position where the substrates W1 and W2 are loaded into the cleaning device 3 in the transport device 82 while holding the substrates W1 and W2, as indicated by an arrow AR24 in FIG. 17A. After that, the transfer robot 821 extends the arm and inserts the tip of the arm into the cleaning device 3 . Then, as indicated by an arrow AR25, the substrates W1 and W2 are transferred from the tip of the arm of the transfer robot 821 to the stage of the cleaning apparatus 3.
- the cleaning device 3 then performs a water cleaning step of cleaning the bonding surfaces while spraying water onto the bonding surfaces of the substrates W1 and W2 (step S6).
- the cleaning apparatus 3 scans the stage on which the substrates W1 and W2 are mounted in the XY directions while spraying water to which ultrasonic waves have been applied from the cleaning head onto the bonding surfaces of the substrates W1 and W2. Clean the entire joint surface. As a result, foreign matter attached to the joint surfaces of the substrates W1 and W2 is removed. Subsequently, the cleaning apparatus 3 stops the water ejection from the cleaning head, and then rotates the stage to spin dry the substrate, thereby completing the cleaning process.
- the transport device 82 transports the substrates W1 and W2 from the cleaning device 3 to the load lock section 83 (step S7).
- the transfer robot 821 extends the arm and inserts the tip of the arm into the cleaning device 3 to transfer the substrates W1 and W2 from the stage to the tip of the arm.
- the transport robot 821 retracts the arm to take out the substrates W1 and W2 from the cleaning device 3 as indicated by the arrow AR26 in FIG. 17B.
- the transport robot 821 turns so that the tip of the arm faces the load lock section 83 while holding the substrates W1 and W2, as indicated by an arrow AR27.
- the transfer robot 821 extends the arm to insert the tip of the arm into the chamber 831 of the load lock section 83 as indicated by the arrow AR29 in FIG. 18A. . Then, the substrates W1 and W2 are transferred to the stage inside the chamber 831 from the tip of the arm. Next, when transfer of the substrates W1 and W2 to the stage in the chamber 831 is completed, the transport robot 821 contracts its arm as indicated by the arrow AR30 in FIG. 18B. Then, the load lock section 83 closes the gate 8331 .
- the seal drive unit 714 of the conveying device 84 fills the filling region S71 of the seal member 711 with gas, thereby changing the seal member 711 from the second state shown in FIG. 2A to the state shown in FIG. 2B.
- a sealing member abutting step for setting the first state is performed (step S8).
- the transport device 84 then opens the gate 8421 (step S9).
- the air existing in the area S72 between the frame 713 and the frame 712 shown in FIG. 2B is discharged out of the area S72 by the vacuum pump for exhausting the gas existing in the chamber 843 of the transfer device 84. be done.
- the bonding apparatus 1 opens the gate 1211 (step S10).
- the transport device 84 transports the substrates W1 and W2 from the load lock unit 83 to the bonding device 1 (step S11).
- the transfer robot 841 extends the arm with the tip end of the arm directed toward the load lock section 83 to move the tip end of the arm from the load lock section 83 . Insert into chamber 831 .
- the transfer robot 841 contracts the arm as indicated by the arrow AR31 in FIG. 18B.
- the substrates W1 and W2 are taken out from the load lock section 83. As shown in FIG.
- the load lock section 83 closes the gate 8321 .
- the transfer robot 841 turns so that the tip of the arm faces the bonding apparatus 1 side, as indicated by an arrow AR31 in FIG. 19A.
- the transport robot 841 rotates and at the same time reverses the tip of the arm.
- the transfer robot 841 extends the arm and inserts the tip of the arm into the joining apparatus 1 .
- the substrate W2 is transferred from the tip of the arm of the transfer robot 841 to the head 142 of the bonding apparatus 1, or the substrate W1 is transferred from the tip of the arm of the transfer robot 841. It is transferred from the unit to the stage 141 of the bonding apparatus 1 .
- the bonding apparatus 1 performs a substrate holding step in which the stage 141 holds the substrate W1 and the head 142 holds the substrate W2 with the bonding surfaces of the substrates W1 and W2 facing each other.
- the controller 9 drives the electrostatic chuck 1411 of the stage 141 to hold the substrate W1 on the stage 141 while the substrate W1 is placed on the stage 401, for example.
- control unit 9 causes the head 142 to be brought into contact with the opposite side of the bonding surface side of the substrate W2 arranged vertically below the head 142 by, for example, a transfer robot (not shown), and the head 142 is kept stationary.
- the electric chuck 1421 is driven to cause the head 142 to hold the substrate W2. Then, the transport robot 841 retracts the arm.
- the bonding device 1 then closes the gate 1211, and the transport device 84 closes the gate 8421 (step S12).
- the seal drive unit 714 of the conveying device 84 discharges the gas in the filled region S71 of the seal member 711 to shrink the seal member 711, thereby separating the seal member from the frame 713 of the bonding device 1.
- a detachment process for setting the state to 2 is executed (step S13).
- the bonding apparatus 1 performs a substrate bonding process for bonding the substrates W1 and W2 together (step S14).
- the substrate bonding process will be described in detail with reference to FIG. In FIG. 20, it is assumed that the bonding apparatus 1 has already stored the measurement results of the thicknesses of the substrates W1 and W2 in the memory of the controller 9 .
- the bonding apparatus 1 performs a distance measurement step of measuring distances between the stage 141 and the head 142 at three locations, the stage 141 and the head 142, by the distance measurement unit 185 (step S101).
- the bonding apparatus 1 performs a tilt adjustment step of adjusting the tilt of the head 142 with respect to the stage 141 based on the distances between the stage 141 and the head 142 at three locations of the stage 141 and the head 142 (step S102). ).
- the three support drive units 146 individually move the three holder support units 1471 in the Z-axis direction so that the substrate W2 mounting surface of the head 142 and the substrate W2 of the stage 141 are mounted.
- Parallel adjustment is performed to adjust the tilt of the head 142 with respect to the stage 141 so that the plane is parallel to the plane.
- the bonding apparatus 1 does not necessarily need to adjust the inclination of the head 142 with respect to the stage 141 every time the process of bonding the substrates W1 and W2 is performed.
- the bonding apparatus 1 may adjust the inclination of the head 142 with respect to the stage 141 each time the bonding apparatus 1 performs the process of bonding the substrates W1 and W2 a preset number of times.
- the lock mechanism 149 may be maintained in the locked state.
- the adjustment in the thickness direction of the substrates W1 and W2 is performed by simultaneously moving the holder support portions 1471 by the support portion driving portion 146.
- the support drive section 146 can apply a driving force in the ⁇ Z direction to the holder support section 1471 to press the substrate W2 against the substrate W2. , W2 can be increased. This makes it possible to bond the substrates W1 and W2 together by surface pressing.
- the bonding apparatus 1 determines the distance between the top surface of the stage 141 and the bottom surface of the head 142 when the substrates W1 and W2 are not held by the stage 141 and the head 142, and the thicknesses of the substrates W1 and W2. to calculate the distance between the bonding surface of the substrate W1 and the bonding surface of the substrate W2. Then, based on the calculated distance, the bonding apparatus 1 moves the head 142 vertically downward to bring the substrates W1 and W2 closer together (step S103). At this time, the bonding apparatus 1 brings the head 142 closer to the stage 141 by simultaneously moving the three holder support portions 1471 vertically downward, that is, in the -Z direction, as indicated by the arrow AR101 in FIG. 21A.
- the bonding apparatus 1 calculates the positional deviation amount of the substrate W1 with respect to the substrate W2 while the substrates W1 and W2 are separated from each other (step S104).
- the control unit 9 first captures images GAa and GAb (see FIG. 11A) of the two substrates W1 and W2 in the non-contact state from the first imaging unit 501 and the second imaging unit 502 of the position measurement unit 500. get. Then, as described above, based on the two photographed images GAa and GAb, the control unit 9 determines the positional deviation amounts dx, dy, Calculate each of d ⁇ .
- the bonding apparatus 1 performs alignment by relatively moving the substrate W2 with respect to the substrate W1 so as to correct the calculated misalignment amounts dx, dy, and d ⁇ (step S105).
- the bonding apparatus 1 moves the stage 141 in the X direction, the Y direction, and the rotational direction around the Z axis so as to reduce the positional deviation amounts dx, dy, and d ⁇ .
- the bonding apparatus 1 brings the substrates W1 and W2 closer together by bringing the head 142 closer to the stage 141 (step S106).
- the bonding apparatus 1 arranges the head 142 at a position where the gap between the substrates W1 and W2 is optimal for bringing the central portions of the substrates W1 and W2 into contact with each other while the substrates W1 and W2 are bent. .
- the peripheral portions of the substrates W1 and W2 are separated from each other by about 50 ⁇ m.
- the bonding apparatus 1 brings the head 142 closer to the stage 141 by simultaneously moving the three holder support portions 1471 in the -Z direction, as indicated by the arrow AR102 in FIG. 21B.
- the bonding apparatus 1 bends the substrates W1 and W2 in a state where the substrates W1 and W2 are separated from each other, so that the center portion of the substrate W1 and the center portion of the substrate W2 are brought into contact with each other.
- the process is executed (step S107).
- the bonding apparatus 1 bends the substrate W1 so that the central portion protrudes toward the substrate W2 with respect to the peripheral portion of the substrate W1.
- the bonding apparatus 1 applies a voltage from the chuck drive unit to the electrostatic chuck 1411 to hold the peripheral portion of the substrate W1 on the electrostatic chuck 1411, and presses the pressing unit 1811 as indicated by an arrow AR103.
- the central portion of the substrate W1 is pressed toward the substrate W2. As a result, the substrate W1 bends so that the central portion W1c protrudes toward the substrate W2. Further, the bonding apparatus 1 bends the substrate W2 so that the central portion protrudes toward the substrate W1 with respect to the peripheral portion of the substrate W2. At this time, the bonding apparatus 1 causes the electrostatic chuck 1421 to apply a voltage from the chuck drive unit to the electrostatic chuck 1421 to hold the peripheral portion of the substrate W2. The central portion of the substrate W2 is pressed toward the substrate W1. As a result, the substrate W2 bends so that its central portion protrudes toward the substrate W1.
- the substrates W1 and W2 with the distance between the peripheral portions thereof being maintained constant, the contact portions of the substrates W1 and W2 starting from the central portion where point pressure is applied by the pressing mechanisms 181 and 182. Due to the intermolecular force (van der Waals force) generated between W2 or the bonding force due to water or OH groups present on the bonding surfaces of the substrates W1 and W2, the substrates W1 and W2 spread from the central portion toward the peripheral portion. .
- the bonding apparatus 1 measures the positional deviation amount of the substrate W2 with respect to the substrate W1 while the bonding surface of the substrate W1 is in contact with the bonding surface of the substrate W2 (step S108). At this time, the bonding apparatus 1 measures the amount of positional deviation of the substrates W1 and W2 in a state in which the movement of the substrate W2 with respect to the substrate W1 is restricted by widening the contact portion between the substrates W1 and W2. Subsequently, the bonding apparatus 1 determines whether or not all of the calculated positional deviation amounts dx, dy, and d ⁇ are equal to or less than preset positional deviation amount thresholds dxth, dyth, and d ⁇ th (step S109).
- the bonding apparatus 1 determines that any one of the calculated positional deviation amounts dx, dy, and d ⁇ is larger than the preset positional deviation amount thresholds dxth, dyth, and d ⁇ th (step S109: No). .
- the bonding apparatus 1 separates the substrate W2 from the substrate W1 by raising the head 142 (step S110). At this time, the bonding apparatus 1 raises the head 142 to widen the distance between the substrates W1 and W2, moves the pressing portion 1811 in the direction of immersion into the stage 141, and immerses the pressing portion 1821 in the head 142.
- the bonding apparatus 1 controls the elevation of the head 142 so that the pulling pressure of the substrate W2 when peeling the substrate W2 from the substrate W1 is constant. As a result, the substrate W2 is separated from the substrate W1, and the contact state between the substrates W1 and W2 is released.
- the bonding apparatus 1 calculates the corrected movement amount of the substrates W1 and W2 for making all the calculated positional deviation amounts dx, dy, and d ⁇ equal to or less than the positional deviation amount thresholds dxth, dyth, and d ⁇ th (step S111).
- the controller 9 determines the positional deviation amounts dx, dy, and d ⁇ between the substrate W1 and the substrate W2 when the substrate W2 is in contact with the substrate W1, and the positional deviation amounts dx, dy, and d ⁇ when the substrate W2 is not in contact with the substrate W1.
- a correction movement amount is calculated so as to move the substrate W1 and the substrate W2 by a movement amount corresponding to the difference between the amounts of positional deviation between the substrates W1 and W2.
- the bonding apparatus 1 performs alignment so as to correct the relative positional deviation amounts dx, dy, and d ⁇ of the two substrates W1 and W2 while the two substrates W1 and W2 are not in contact with each other (step S112).
- the bonding apparatus 1 moves the stage 141 in the X direction, the Y direction, and the rotation direction about the Z axis by the correction movement amount calculated in step S111.
- the bonding apparatus 1 adjusts the relative position of the substrate W2 with respect to the substrate W1 so that the displacement amounts dx, dy, and d ⁇ are reduced while the substrates W1 and W2 are separated from each other.
- the joining apparatus 1 executes the process of step S106 again.
- step S109 Yes.
- the bonding apparatus 1 widens the contact portion of the substrates W1 and W2 from the central portion to the peripheral portion of the substrates W1 and W2 to bring the substrates W1 and W2 into contact with each other over the entire surface (step S113).
- the bonding apparatus 1 moves the pressing portion 1811 of the pressing mechanism 181 in the direction of being immersed in the stage 141 as indicated by the arrow AR106 in FIG.
- the head 142 is moved toward the stage 141 as indicated by an arrow AR105 at the same time as the head 142 is moved toward the stage 142, thereby shortening the distance between the peripheral portions of the substrates W1 and W2.
- the bonding apparatus 1 brings the peripheral portion of the substrate W1 into contact with the peripheral portion of the substrate W2 so that the entire bonding surfaces of the substrates W1 and W2 are brought into contact with each other.
- the bonding apparatus 1 presses only the peripheral portion W1s of the substrate W1 against the peripheral portion W2s of the substrate W2 in a state where the substrates W1 and W2 are in full contact with each other, thereby bonding the substrates W1 and W2 together.
- a bonding step is performed to bond the substrates W1 and W2 together by pressing the portions W1s and W2s together (step S114).
- the bonding apparatus 1 releases the holding of the substrate W2 by stopping the electrostatic chuck 1421 of the head 142 (step S115). After that, the bonding apparatus 1 lifts the head 142 to detach the head 142 from the substrate W2.
- step S15 the seal driving section 714 of the transfer device 84 again causes the seal member 711 to move from the second state described above to the first state described above.
- a contact step is executed (step S15).
- step S16 the bonding device 1 opens the gate 1211 (step S17).
- step S18 the transport device 84 transports the bonded substrates W1 and W2 from the bonding device 1 to the load lock unit 83 (step S18).
- the transfer robot 841 extends the arm and inserts the tip of the arm into the joining apparatus 1 .
- the transfer robot 841 retracts the arm to take out the bonded substrates W1 and W2 from the bonding apparatus 1 .
- the transfer robot 841 turns so that the tip of the arm faces the load lock section 83 side.
- the transfer robot 841 inserts the tip of the arm into the chamber 831 of the load lock 83 by extending the arm with the tip of the arm directed toward the load lock 83 .
- the transfer robot 841 contracts the arm.
- the bonding device 1 closes the gate 1211, and the transfer device 84 closes the gate 8421 (step S19).
- the seal drive unit 714 of the conveying device 84 appropriately shrinks the seal member 711 to perform a detachment step in which the seal member is separated from the frame 713 of the bonding device 1 in a second state.
- the transport device 82 transports the bonded substrates W1 and W2 from the load lock section 83 to the take-out port 813 (step S20).
- the transfer robot 821 extends the arm with the tip of the arm directed toward the load lock section 83 to move the tip of the arm. Insert the part into the chamber 831 . Then, the substrates W1 and W2 bonded to each other are transferred from the stage in the chamber 831 to the tip of the arm of the transfer robot 821 .
- the transfer robot 821 retracts the arm to take out the bonded substrates W1 and W2 from the load lock section 83 , and then the load lock section 83 closes the gate 8331 . Subsequently, the transfer robot 821 turns so that the tip of the arm faces the side opposite to the load lock section 83 side. Thereafter, while holding the substrates W1 and W2 bonded to each other, the transfer robot 821 extends its arm and inserts the tip of the arm into the extraction port 813 to remove the substrates W1 and W2 bonded to each other from the extraction port. 813.
- the features of the joining apparatus 1 according to the present embodiment will be described in comparison with joining apparatuses 9A and 9B according to comparative examples shown in FIGS. 23A and 23B.
- the head driving section 9144 for driving the head 141 is positioned vertically above the head 142, so the height H91 from the ground to the head driving section 9144 is increased. Therefore, the vibration amplitude of the head driving section 9144 and the head 142 connected to the head driving section 9144 becomes large, and the vibration amplitude of the head 142 relative to the stage 141 becomes large.
- the bonding apparatus 9B changes the driving target from the head 142 to the stage 141 and drives the stage 141 in order to avoid the head driving section 9144 being arranged at a position high from the ground.
- a stage drive unit 9143 is arranged vertically below the stage 141 .
- the stage driving section 9143 is long and positioned vertically below the stage 142, so the distance from the ground to the stage 141 is long. Therefore, the vibration amplitude of the stage driving section 9143 and the stage 141 connected to the stage driving section 9143 becomes large, and the relative vibration amplitude of the stage 141 with respect to the head 142 becomes large. Therefore, in the same manner as described above, the contact position when the substrates W1 and W2 are brought into contact with each other has good variation in the imaged images obtained by imaging the alignment marks MK1a, MK1b, MK2a and MK2b provided on both substrates W1 and W2.
- the supporting section driving section 146 is arranged on the side of the stage 141 and the head 142 .
- the vibration isolation unit 160 can be arranged on the ⁇ Z direction side of the support driving section 146 in the bonding apparatus 1 without increasing the height of the stage 141 and the head 142 from the ground. . Therefore, vibration transmitted to the stage 141 and the head 142 can be reduced.
- frequency spectrum SPE1 shows the frequency dependence of the vibration amplitude of stage 141 and head 142 when plate driving section 163 is operated by vibration isolation unit 160
- frequency spectrum SPE2 shows the frequency dependence of the vibration amplitude of plate of vibration isolation unit 160
- FIG. 5 shows the frequency dependence of the vibration amplitudes of the stage 141 and the head 142 when the driving section 163 is stopped.
- the dashed line is a line indicating the vibration amplitude of 0.1 ⁇ m.
- the frequency spectrum SPE2 had an amplitude exceeding 0.1 ⁇ m near 6 Hz.
- the amplitude near 6 Hz is reduced to less than 0.1 ⁇ m.
- the amount of positional deviation of a plurality of substrates W1 and W2 joined while the plate driving section 163 of the vibration isolation unit 160 is stopped and the amount of positional deviation of the substrates W1 and W2 joined while the plate driving section 163 of the vibration isolation unit 160 is in operation are shown.
- Positional deviation amounts between the substrates W1 and W2 were compared for a plurality of sets of the substrates W1 and W2.
- the amount of positional deviation was about 100 nm when the plate driving section 163 of the vibration isolation unit 160 was stopped, whereas the positional deviation amount was about 100 nm when the plate driving section 163 of the vibration isolation unit 160 was operating. It was found that the amount of deviation was reduced to about 40 nm.
- the vibration isolation unit 160 reduces the amplitude of the vibration component of the stage 141 and the head 142, especially at a frequency near 6 Hz, to less than 0.1 ⁇ m, so that the amount of positional deviation between the substrates W1 and W2 that are bonded to each other is reduced. This is considered to reflect the reduction to 0.1 ⁇ m or less. As a result, the substrates W1 and W2 were successfully joined with a positional accuracy of 0.1 ⁇ m or less.
- the three holder support portions 1471 support the head holder 111 from each of three positions on the outer peripheral portion of the stage 141 .
- the three support section drive sections 146 are arranged on the outer periphery of the stage 141, respectively, and move the three holder support sections 1471 separately in the Z-axis direction.
- the distance of the stage 141 and the head 142 from the ground can be shortened, so that the vibration amplitude of the stage 141 and the head 142 can be reduced accordingly. Therefore, positional deviation between the substrates W1 and W2 due to vibration transmitted from the ground is reduced, so that the substrates W1 and W2 can be joined with high positional accuracy.
- the three support portion driving portions 146 move one of the three holder support portions 1471 separately in the Z-axis direction, thereby moving three positions on the circumference of the stage 142. and three locations on the head 142 that face the three locations on the periphery of the stage 141 respectively.
- the tilt of the head 142 with respect to the stage 141 can be adjusted so that the head 142 is parallel to the stage 141. Therefore, when the substrates W1 and W2 are brought into contact with each other, the substrate W2 is positioned with respect to the substrate W1. It is possible to suppress the occurrence of positional deviation due to tilting.
- the head 142 and the telescopic mechanism operate in a state of point contact. It was easily affected by vibrations transmitted to the
- the head 142 is connected to the holder supporting portion 1471 via the head holder 111 and the connecting portion 145 .
- the joining device 1 according to the present embodiment includes a connecting portion 145 and a lock mechanism 149 .
- the parallel adjustment of the head holder 111 can be performed with the lock mechanism 149 in the unlocked state, and when the parallel adjustment of the head holder 111 is completed, the lock mechanism 149 can be in the locked state.
- the effect of vibration transmitted to the head 142 can be reduced by setting the lock mechanism 149 to the locked state.
- the distance measuring section 185 measures the distance between the head 142 and the stage 141 in the Z-axis direction at three points on the head 142 and the stage 141 .
- the tilt of the head 142 with respect to the stage 141 can be accurately measured, so that the tilt of the head 142 with respect to the stage 141 can be adjusted appropriately.
- the present invention is not limited to the configuration of the above-described embodiments.
- the bonding apparatus 2001 may be configured without a chamber.
- the same reference numerals as in FIG. 5 denote the same configurations as in the embodiment.
- the stage drive section 2143 has a support member 1433 that is fixed to the top plate 114 and supports the actuator 1432 .
- the air cylinder 2186 also has a support member 21863 fixed to the top plate 114 and supporting the cylinder tube 1862 .
- the conveying device 84 is provided with a seal member 711 which is annular and is arranged over the entire circumference of the frame 712 on the side of the frame 712 facing the frame 713 of the joining device 1 .
- the bonding apparatus 1 has a ring-shaped sealing member (not shown) disposed over the entire circumference of the frame 713 on the side of the frame 713 facing the frame 712 of the conveying device 84 . ) may be provided.
- only one of the two substrates W1 and W2 is subjected to the N 2 RIE treatment and the N 2 radical treatment, and the other is not subjected to at least one of the N 2 RIE treatment and the N 2 radical treatment. It may be configured to perform processing.
- the bonding apparatus 1 applies pressure to the substrates W1 and W2 and performs heat treatment while the entire bonding surfaces of the substrates W1 and W2 are in contact with each other.
- the bonding apparatus 1 may have a configuration in which the entire bonding surfaces of the substrates W1 and W2 are in contact with each other, and only pressure is applied to the substrates W1 and W2, but heat treatment is not performed.
- the bonding apparatus 1 may have a configuration in which only the heat treatment of the substrates W1 and W2 is performed and pressure is not applied while the entire bonding surfaces of the substrates W1 and W2 are in contact with each other.
- the substrates W1 and W2 may be pressurized and heat-treated.
- the bonding apparatus 1 may perform up to temporary bonding of the substrates W1 and W2, and then heat treatment may be performed in another heating apparatus (not shown).
- the chamber 120 may include particle beam sources 191 and 192 for irradiating the bonding surfaces of the substrates W1 and W2 with particle beams.
- the same reference numerals as in FIG. 5 are assigned to the same configurations as in the embodiment.
- the particle beam sources 191 and 192 for example, a Fast Atom Beam (FAB) source, an ion gun, or the like can be adopted.
- the joining system according to this modification may have a configuration in which the load lock unit 85, the transporting device 86 and the activation processing device 2 are not provided in the joining system according to the embodiment.
- FAB Fast Atom Beam
- the bonding system transports the substrates W1 and W2 from the introduction ports 811 and 812 to the cleaning apparatus 3 (step S401).
- the substrates W1 and W2 for example, a Si substrate, an alumina substrate (Al 2 O 3 ) including a sapphire substrate, a gallium oxide (Ga 2 O 3 ), a nitride substrate (for example, silicon nitride (SiN), nitride aluminum (AlN), gallium nitride (GaN)), GaAs substrate, silicon carbide (SiC) substrate, lithium tantalate (Lt: LiTaO 3 ) substrate, lithium niobate substrate (Ln: LiNbO 3 ), diamond substrate, etc.
- SiN silicon nitride
- AlN nitride aluminum
- GaN gallium nitride
- GaAs substrate silicon carbide (SiC) substrate
- LiTaO 3 lithium tantalate
- LiNbO 3 lithium niobate substrate
- the substrates W1 and W2 may be substrates having electrodes formed of a metal such as Au, Cu, Al, or Ti on the bonding surfaces.
- the cleaning device 3 performs a water cleaning step of cleaning the bonding surfaces of the substrates W1 and W2 while spraying water onto the bonding surfaces (step S402).
- the details of the processing in the water washing step are the same as the processing in step S106 described in the embodiment.
- the transport device 82 transports the substrates W1 and W2 from the cleaning device 3 to the load lock section 83 (step S403).
- the load lock unit 83 includes a substrate heating unit (not shown) for heating the transported substrates W1 and W2.
- the seal drive unit 714 of the conveying device 84 fills the filling region S71 of the seal member 711 with gas, thereby changing the seal member 711 from the second state shown in FIG. 2A described in the embodiment to the second state shown in FIG. 2B.
- a seal member abutting step for setting the state 1 is executed (step S404).
- the conveying device 84 executes the first gate opening step of opening the gate 8421 (step S405).
- the bonding apparatus 4001 performs a second gate opening step of opening the gate 1211 (step S406).
- the transport device 84 executes a transport step of transporting the substrates W1 and W2 from the load lock section 83 to the bonding device 4001 (step S407). Subsequently, the bonding device 4001 closes the gate 1211, and the transfer device 84 closes the gate 8421 (step S408). After that, the seal drive unit 714 of the conveying device 84 discharges the gas in the filled region S71 of the seal member 711 to contract the seal member 711, thereby separating the seal member from the frame 713 of the bonding device 4001. A detachment process for setting the state to 2 is executed (step S409).
- the bonding apparatus 4001 performs an activation process for activating the bonding surfaces of the two substrates W1 and W2 while the chamber 120 is in a reduced-pressure atmosphere (step S410).
- the bonding apparatus 4001 irradiates the bonding surfaces of the substrates W1 and W2 with particle beams emitted from the particle beam sources 191 and 192, thereby performing activation processing on the bonding surfaces of the substrates W1 and W2.
- the bonding apparatus 4001 brings the substrates W1 and W2 closer to each other by a preset distance, and then positions (aligns) the substrate W2 with respect to the substrate W1 based on the amount of positional deviation measured by the position measuring unit 150. is executed (step S411).
- the bonding apparatus 4001 moves the head 142 closer to the stage 141 again to bring the two substrates W1 and W2 into contact with each other, and then applies pressure in a direction in which the two substrates W1 and W2 are brought into close contact with each other.
- the substrates W1 and W2 are bonded (step S412).
- the substrates W1 and W2 may be heat-treated together.
- the substrates W1 and W2 are bonded together via dangling bonds.
- the seal drive unit 714 of the conveying device 84 again performs the seal member abutment step of changing the seal member 711 from the second state to the first state (step S413).
- the bonding device 4001 performs the second gate opening step of opening the gate 1211 (step S415).
- the transport device 84 transports the bonded substrates W1 and W2 from the bonding device 1 to the load lock unit 84 (step S416).
- the bonding device 4001 closes the gate 1211, and the transfer device 84 closes the gate 8421 (step S417).
- the transport device 82 transports the bonded substrates W1 and W2 from the load lock section 83 to the take-out port 813 (step S418).
- bonding can be performed after performing the activation process while maintaining the inside of the chamber 120 in a so-called ultra-high vacuum state, so it can be applied to direct bonding of the substrates W1 and W2 in an ultra-high vacuum.
- the bonding apparatus 1 includes the vibration isolation unit 160 .
- the present invention is not limited to this. It may be an anti-vibration table.
- FIG. 28 the same reference numerals as in FIG. 5 denote the same configurations as in the embodiment.
- the bonding apparatus 4001 is different from the bonding apparatus 1 according to the embodiment in that it does not include an anti-vibration unit.
- the first pedestal 4042 has a top plate 4421 on which the bonding device 4001 is installed vertically above, that is, on the +Z direction side, and a vibration isolation mechanism. and a plate support portion 4422 for freely supporting.
- the plate support part 4422 has an antivibration mechanism using, for example, an air spring or a coil spring, and supports the top plate 4421 so as to be movable along the Z-axis direction.
- the first mount 4042 further includes a vibration detection section 4424 that detects vibration transmitted to the top plate 4421, a plate driving section 4423 that relatively moves the top plate 4421 with respect to the plate support section 2422, a top plate and a vibration isolation control unit 4429 that controls the plate driving unit 2423 so as to reduce the vibration transmitted to 4421 .
- the plate driving section 4423 and the vibration isolation control section 4429 have the same configurations as the plate driving section 163 and the vibration isolation control section 169 described in the embodiment.
- the bonding device 4001 can be configured without a vibration isolation unit, so that the configuration of the bonding device 4001 can be simplified and the weight can be reduced accordingly.
- vibration isolation unit 160 of the bonding apparatus 1 is a so-called active vibration isolation table.
- a so-called passive anti-vibration table supported by a support portion having a vibration isolation mechanism, such as the anti-vibration mechanism, may also be used.
- the present invention is not limited to this. may not be provided with a pressing mechanism. Alternatively, only the head 142 may have the pressing mechanism 182 and the stage 141 may not have the pressing mechanism.
- the lock mechanism 149 can be switched between the locked state and the unlocked state while the welding apparatus 1 is operating.
- the holder support portion 1471 may be fixed to the head holder 111 with bolts or the like after the inclination of the head holder 111 is adjusted. Even in this case, it is possible to finely adjust the inclination of the head holder 111 corresponding to the deflection of the head holder 111 even if the holder support portion 1471 is moved in the Z-axis direction.
- the bonding device 1 according to the embodiment may be configured without the lock mechanism 149 .
- the head 142 arranged in the chamber 120 can receive the pressurized force due to the contraction force of the bellows 113 fixed to the head holder 111 due to the pressure reduction in the chamber 120 .
- the entire surfaces of the substrates W1 and W2 are brought into contact with each other to join.
- bonding can be performed even at this level of pressure, not under reduced pressure.
- the central portions of the substrates W1 and W2 are pressed against each other while the central portions of the substrates W1 and W2 are bent, and then the entire surfaces of the substrates W1 and W2 are pressed.
- only the peripheral portion may be pressed.
- the peripheral portions of the substrates W1 and W2 can be prevented from floating, and the central portions of the substrates W1 and W2 can be prevented from being distorted.
- an example has been described in which the substrates W1 and W2 are butted against each other while the substrates W1 and W2 are bent by pressing the central portions of the substrates W1 and W2, and then the substrates W1 and W2 are bonded together. Instead, the substrates W1 and W2 may be brought into contact with each other over their entire surfaces and then bonded.
- the transfer device 5084 is elongated and is inserted into an opening 5120f provided in the chamber 5120 of the bonding device 5001, and has a holding portion 5845 for holding the substrates W1 and W2 at one end. It may have a support rod 5841 , a support 5842 that supports the support rod 5841 at the other end of the support rod 5841 , and a support drive section 5843 that drives the support 5842 .
- the same reference numerals as in FIG. 5 denote the same configurations as in the embodiment.
- the bonding apparatus 5001 has the same configuration as the bonding apparatus 1 described in the embodiment except for the configuration of the chamber 5120 .
- the transfer device 5084 has a bellows 5844 interposed between the support 5842 and the outer periphery of the opening 5120f of the chamber 5120 to maintain the degree of vacuum in the chamber 5120 .
- the support drive unit 5843 includes, for example, a rail (not shown) that supports a slider (not shown) to which the support 5842 is fixed so as to be slidable in the X-axis direction, and a rail (not shown) for driving the slider in the X-axis direction.
- the support driving section 5843 drives the support 5842 in the direction in which the support rod 5841 is inserted into and removed from the chamber 5120 as indicated by an arrow AR5001, thereby moving the substrates W1 and W2 between the load lock section 83 and the bonding apparatus 5001. from one to the other.
- the chamber 5120 of the bonding device 1 may be configured to be connected to the gate 8321 of the load lock section 83 via the frames 712 and 713 and the seal member 711. .
- Gate 1211 is provided so as to cover opening 120e of chamber 5120 .
- a transporting device 3084 shown in FIG. the bonding device 5001 may be arranged to be rotated counterclockwise by 90 degrees with respect to the arrangement shown in FIG.
- the transfer means employs the bellows 5844, the inside of the chamber 5120 can be maintained in a so-called ultra-high vacuum state.
- the present invention is not limited to this.
- a bonding device 6001 shown in FIG. It may be directly fixed to the corner.
- a support member 6112 fixed to the head holder 6111 while supporting the head 142 and a shim plate 6117 appropriately interposed between the support member 6112 and the head holder 6111 may be provided.
- the support member 6112 has a diameter smaller than that of the portion of the support member 6112 on the -Z direction side of the head holder 6111 at the end on the +Z direction side.
- a through hole 6111a is formed through the head holder 6111 in the thickness direction at a position corresponding to the holder fixing portion to which the support member 6112 is fixed in the head holder 6111 and into which the projecting portion 6112a is fitted.
- the length of the protrusion 6112a is longer than the thickness of the head holder 6111, and the tip of the protrusion 6112a protrudes from the head holder 6111 in the +Z direction.
- the support member 6112 is placed on the +Z direction side of the head holder 6111 and is fixed to the head holder 6111 by a fixing member 6118 having a nut portion (not shown) with which the tip portion of the projecting portion 6112a is screwed.
- a shim plate 6117 can be appropriately fitted into the projecting portion 6112a.
- the distance between the head support portion where the support member 6112 supports the head 142 and the holder fixing portion where the support member 6112 is fixed to the head holder 6111 is adjusted.
- the length L61 can be changed. From the support member 6112, the shim plate 6117, and the fixing member 6118, the length L61 between the head support portion where the support member 6112 supports the head 142 and the holder fixing portion where the support member 6112 is fixed to the head holder 6111 is A variable head support member is provided.
- the shim plates 6117 of the three support members 6112 are appropriately fitted into the protruding portions 6112a of the respective head support portions and the holders corresponding to the three support members 6112, respectively. Adjust the length L61 between the fixed parts. Thereby, the parallelism of the head 142 with respect to the stage 141 is adjusted to 5 ⁇ m or less and several ⁇ m.
- the three support section driving sections 146 move the three holder support sections 61471 in the Z-axis direction, respectively, so that three positions on the circumference of the stage 141 and the circumference of the stage 141 on the head 142 are moved.
- the head holder 6111 By adjusting the distance between the three points facing each of the three points of , the head holder 6111 is bent. Thereby, the parallelism of the head 142 with respect to the stage 141 is adjusted to 1 ⁇ m or less, preferably 0.2 ⁇ m or less. In this way, if the parallelism is to be adjusted by 5 ⁇ m or less, or by several ⁇ m, the head holder 6111 can be bent even without the structure having the connecting portion 145 capable of locking and unlocking as described in the embodiment. can be dealt with.
- the parallelism of the head 142 with respect to the stage 141 can be adjusted to 0.2 ⁇ m or less, so the positional accuracy of the substrates W1 and W2 bonded to each other can be improved.
- a piezo actuator may be provided on the support member 6112 on the head 142 side. Accordingly, the tilt of the head 142 can be adjusted by driving the piezo actuators provided on each of the plurality of support members 6112 individually.
- the connecting portion 145 includes a hemispherical engaging member 1451 provided at the +Z direction end of each of the three holder support portions 1471, and a hemispherical engaging member 1451 provided at the ⁇ Z direction side of the head holder 111.
- An example has been described in which the engaged member 1452 having a recessed portion of a shape is provided.
- the shape of the engaging member is not limited to a hemispherical shape.
- the engaging member may have a columnar or prismatic shape, and the engaged member may have a circular or rectangular cross section and have a recessed portion with a size that allows the engaging member to be fitted.
- the present invention is suitable for manufacturing, for example, CMOS (Complementary MOS) image sensors, memories, arithmetic elements, and MEMS (Micro Electro Mechanical Systems).
- CMOS Complementary MOS
- MEMS Micro Electro Mechanical Systems
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Abstract
Description
第1基板と第2基板とを接合する接合装置であって、
前記第1基板を支持するステージと、
前記ステージに対向して配置され、前記ステージに対向する側で前記第2基板を保持するヘッドと、
前記ヘッドにおける前記ステージ側とは反対側において前記ヘッドを保持し、前記ヘッドと前記ステージとの並び方向に直交する方向における前記ヘッドおよび前記ステージの外側に延在するヘッドホルダと、
前記ステージの外周部における複数箇所それぞれから前記ヘッドホルダを支持する複数のホルダ支持部と、
前記複数のホルダ支持部を、前記ヘッドホルダと前記ステージとが互いに近づく第1方向または前記ヘッドホルダと前記ステージとが互いに離れる第2方向へ各別に移動させる複数の支持部駆動部と、を備える。
第1基板と第2基板とを接合する接合方法であって、
前記第2基板を保持するためのヘッドにおける前記第1基板を保持するためのステージに対向して配置され且つ前記ステージ側とは反対側において前記ヘッドを保持し、前記ヘッドと前記ステージとの並び方向に直交する方向における前記ヘッドおよび前記ステージの外側に延在するヘッドホルダを前記ステージの外周部における複数箇所それぞれから支持する複数のホルダ支持部を、前記ヘッドホルダと前記ステージとが互いに近づく第1方向または前記ヘッドホルダと前記ステージとが互いに離れる第2方向へ各別に移動させることにより、前記ステージの周部における複数箇所と、前記ヘッドにおける前記ステージの周部の複数箇所それぞれに対向する複数箇所と、の間の距離を調整する工程を含む。
Claims (21)
- 第1基板と第2基板とを接合する接合装置であって、
前記第1基板を支持するステージと、
前記ステージに対向して配置され、前記ステージに対向する側で前記第2基板を保持するヘッドと、
前記ヘッドにおける前記ステージ側とは反対側において前記ヘッドを保持し、前記ヘッドと前記ステージとの並び方向に直交する方向における前記ヘッドおよび前記ステージの外側に延在するヘッドホルダと、
前記ステージの外周部における複数箇所それぞれから前記ヘッドホルダを支持する複数のホルダ支持部と、
前記複数のホルダ支持部を、前記ヘッドホルダと前記ステージとが互いに近づく第1方向または前記ヘッドホルダと前記ステージとが互いに離れる第2方向へ各別に移動させる複数の支持部駆動部と、を備える、
接合装置。 - 前記複数の支持部駆動部は、それぞれ、前記複数のホルダ支持部を前記第1方向または前記第2方向へ各別に移動させることにより、前記ステージの周部における複数箇所と、前記ヘッドにおける前記ステージの周部の複数箇所それぞれに対向する複数箇所と、の間の距離を調整することにより、前記ステージに対する前記ヘッドの平行度の調整を行う、
請求項1に記載の接合装置。 - 前記複数のホルダ支持部および前記複数の支持部駆動部は、それぞれ、3つずつ存在する、
請求項1または2に記載の接合装置。 - 前記複数のホルダ支持部それぞれの前記ヘッドホルダ側の端部に配設され、前記複数のホルダ支持部に対して前記ヘッドホルダが揺動自在な状態で前記複数のホルダ支持部を前記ヘッドホルダに連結する連結部と、
前記ヘッドホルダを前記複数のホルダ支持部に固定するロック状態と、前記ヘッドホルダを前記複数のホルダ支持部に対して揺動自在な状態で維持するアンロック状態と、のいずれかの状態をとりうるロック機構と、を更に備える、
請求項1から3のいずれか1項に記載の接合装置。 - 前記ヘッドを支持した状態で前記ヘッドホルダに固定され且つ前記ヘッドを支持するヘッド支持部分と前記ヘッドホルダに固定されるホルダ固定部分との間の長さが可変である複数のヘッド支持部材を更に備え、
前記複数のホルダ支持部それぞれの前記ヘッドホルダ側の端部は、前記ヘッドホルダに固定され、
前記複数のヘッド支持部材は、前記複数のヘッド支持部材それぞれの前記ヘッド支持部分と前記ホルダ固定部分との間の長さが調整されることにより、前記ステージに対する前記ヘッドの平行度の調整が可能であり、
前記複数の支持部駆動部は、それぞれ、前記複数のホルダ支持部を前記第1方向または前記第2方向へ各別に移動させることにより、前記ステージの周部における複数箇所と、前記ヘッドにおける前記ステージの周部の複数箇所それぞれに対向する複数箇所と、の間の距離を調整して、前記ヘッドホルダを撓ませることにより、前記ステージに対する前記ヘッドの平行度の調整を行う、
請求項1から3のいずれか1項に記載の接合装置。 - 前記ヘッドにおける少なくとも3箇所において、前記ヘッドと前記ステージとの並び方向における前記ヘッドまたは前記第2基板と前記ステージまたは前記第1基板との間の距離を測定する距離測定部を更に備える、
請求項1から5のいずれか1項に記載の接合装置。 - 前記ステージと前記ヘッドとの少なくとも一方は、
前記第1基板と前記第2基板との少なくとも一方の周部が保持された状態で、前記第1基板と前記第2基板との少なくとも一方の中央部を押圧することにより、前記第1基板と前記第2基板との少なくとも一方の接合面の中央部が周部よりも突出するように前記第1基板と前記第2基板との少なくとも一方を撓ませる押圧機構を有する、
請求項1から6のいずれか1項に記載の接合装置。 - 減圧状態で維持され、前記ヘッドおよび前記ステージが内側に配置されるとともに、前記ヘッドと前記ステージとの並び方向から見て、前記複数の支持部駆動部の内側の領域に配置されるチャンバを更に備える、
請求項1から7のいずれか1項に記載の接合装置。 - 前記ステージ、前記ヘッドおよび前記複数の支持部駆動部を支持するトッププレートと、
防振機構を有し、鉛直上方において前記トッププレートを移動自在に支持するプレート支持部と、を有する、
請求項1から8のいずれか1項に記載の接合装置。 - 前記トッププレートに伝達する振動を検出する振動検出部と、
前記トッププレートを前記プレート支持部に対して相対的に移動させるプレート駆動部と、
前記振動検出部により検出される前記振動に基づいて、前記振動を相殺するように前記トッププレートを移動させるよう前記プレート駆動部を制御する除振制御部と、を有する、
請求項9に記載の接合装置。 - 第1基板と第2基板とを接合する接合装置と、
前記接合装置が載置される第1架台と、
前記第1基板と前記第2基板とを前記接合装置へ搬送する搬送装置と、
前記第1架台とは異なり、前記搬送装置が載置される第2架台と、を備え、
前記接合装置は、
前記第1基板を支持するステージと、
前記ステージに対向して配置され、前記ステージに対向する側で前記第2基板を保持するヘッドと、
前記ヘッドにおける前記ステージ側とは反対側において前記ヘッドを保持し、前記ヘッドと前記ステージとの並び方向に直交する方向における前記ヘッドおよび前記ステージの外側に延在するヘッドホルダと、
前記ステージの外周部における複数箇所それぞれから前記ヘッドホルダを支持する複数のホルダ支持部と、
前記複数のホルダ支持部を、前記ヘッドホルダと前記ステージとが互いに近づく第1方向または前記ヘッドホルダと前記ステージとが互いに離れる第2方向へ各別に移動させる複数の支持部駆動部と、を有し、
前記第1架台と前記第2架台とは、互いに離間して配置されている、
接合システム。 - 第1基板と第2基板とを接合する接合方法であって、
前記第2基板を保持するためのヘッドにおける前記第1基板を保持するためのステージに対向して配置され且つ前記ステージ側とは反対側において前記ヘッドを保持し、前記ヘッドと前記ステージとの並び方向に直交する方向における前記ヘッドおよび前記ステージの外側に延在するヘッドホルダを前記ステージの外周部における複数箇所それぞれから支持する複数のホルダ支持部を、前記ヘッドホルダと前記ステージとが互いに近づく第1方向または前記ヘッドホルダと前記ステージとが互いに離れる第2方向へ各別に移動させることにより、前記ステージの周部における複数箇所と、前記ヘッドにおける前記ステージの周部の複数箇所それぞれに対向する複数箇所と、の間の距離を調整する工程を含む、
接合方法。 - 前記ステージに前記第1基板を保持させるとともに、前記ヘッドにおける前記ステージに対向する側に前記第2基板を保持させる基板保持工程と、
前記ホルダ支持部を前記第1方向へ各別に移動させて前記ヘッドを前記ステージに対して相対的に近づけることにより、前記第1基板を前記第2基板に接触させる接触工程と、を更に含む、
請求項12に記載の接合方法。 - 前記複数のホルダ支持部を前記第1方向または前記第2方向へ各別に移動させることにより、前記ステージの周部における複数箇所と、前記ヘッドにおける前記ステージの周部の複数箇所それぞれに対向する複数箇所と、の間の距離を調整することにより、前記ステージに対する前記ヘッドの傾きを調整する傾き調整工程を更に含む、
請求項12または13に記載の接合方法。 - 前記ヘッドを支持した状態で前記ヘッドホルダに固定され且つ前記ヘッドを支持するヘッド支持部分と前記ヘッドホルダに固定されるホルダ固定部分との間の長さが可変である複数のヘッド支持部材それぞれの前記ヘッド支持部分と前記ホルダ固定部分との間の長さを調整することにより、前記ステージに対する前記ヘッドの傾きを調整する第1傾き調整工程と、
前記複数のホルダ支持部それぞれの前記ヘッドホルダ側の端部は、前記ヘッドホルダに固定され、前記複数のホルダ支持部を前記第1方向または前記第2方向へ各別に移動させることにより、前記ステージの周部における複数箇所と、前記ヘッドにおける前記ステージの周部の複数箇所それぞれに対向する複数箇所と、の間の距離を調整して、前記ヘッドホルダを撓ませることにより、前記ステージに対する前記ヘッドの傾きを調整する第2傾き調整工程と、を更に含む、
請求項12または13に記載の接合方法。 - 前記複数のホルダ支持部は、3つ存在する、
請求項12から15のいずれか1項に記載の接合方法。 - 前記傾き調整工程の前または前記傾き調整工程中に、前記ヘッドにおける少なくとも3箇所において、前記ヘッドと前記ステージとの並び方向における前記ヘッドまたは前記第2基板と前記ステージまたは前記第1基板との間の距離を測定する距離測定工程を更に含む、
請求項14または15に記載の接合方法。 - 前記第1基板と前記第2基板との少なくとも一方の周部が保持された状態で、前記第1基板と前記第2基板との少なくとも一方の中央部を押圧することにより、前記第1基板と前記第2基板との少なくとも一方の接合面の中央部が周部よりも突出するように前記第1基板と前記第2基板との少なくとも一方を撓ませる押圧工程を更に含む、
請求項12から17のいずれか1項に記載の接合方法。 - 前記複数のホルダ支持部は、減圧状態で維持され、内側に前記ヘッドおよび前記ステージが配置されたチャンバ内において、前記ヘッドと前記ステージとの並び方向から見て、前記ヘッドおよび前記ステージの外側の領域で前記ヘッドホルダを支持する、
請求項12から18のいずれか1項に記載の接合方法。 - 前記ステージおよび前記ヘッドは、トッププレートに支持され、
前記トッププレートは、防振機構を有し、鉛直上方において前記トッププレートを移動自在に支持するプレート支持部により支持されている、
請求項12から19のいずれか1項に記載の接合方法。 - 前記トッププレートに伝達する振動を検出し、検出される前記振動に基づいて、前記振動を相殺するように前記トッププレートを前記プレート支持部に対して相対的に移動させる、
請求項20に記載の接合方法。
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