WO2022206385A1 - High-flux film preparation device in which crucible replacement is convenient, and use thereof - Google Patents

High-flux film preparation device in which crucible replacement is convenient, and use thereof Download PDF

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Publication number
WO2022206385A1
WO2022206385A1 PCT/CN2022/081093 CN2022081093W WO2022206385A1 WO 2022206385 A1 WO2022206385 A1 WO 2022206385A1 CN 2022081093 W CN2022081093 W CN 2022081093W WO 2022206385 A1 WO2022206385 A1 WO 2022206385A1
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WO
WIPO (PCT)
Prior art keywords
crucible
groove
displacement member
storage
truncated
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PCT/CN2022/081093
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French (fr)
Chinese (zh)
Inventor
郭鸿杰
杨露明
冯秋洁
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宁波星河材料科技有限公司
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Publication of WO2022206385A1 publication Critical patent/WO2022206385A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

Definitions

  • the embodiments of the present application belong to the technical field of film coating, and relate to a film coating device, and in particular, to a high-flux thin film preparation device that facilitates replacement of crucibles and applications thereof.
  • High-throughput material chip technology draws on the mask technology for manufacturing integrated circuit chips. Thousands of materials with different components can be prepared in one experiment on a substrate, and the composition, structure, and phase can be quickly characterized, which can greatly shorten the time. The development cycle of new materials. High-throughput material chip technology has become one of the most important methods for material research and development.
  • the evaporation source used in electron beam evaporation can store multiple materials at the same time.
  • the evaporation source has a baffle with a gap.
  • the electron beam evaporation source rotates the material to be evaporated under the baffle gap by rotating.
  • the electron beam heats the material under the baffle notch, thereby evaporating the coating.
  • Other materials are shielded by baffles to avoid cross-contamination between materials due to evaporation.
  • the electron beam evaporation source can store multiple materials at the same time, it is still limited. If it is necessary to change or add materials, it is necessary to break the vacuum and open the cavity. And during the coating process, the evaporated material will be deposited on the edge of the baffle gap; if the vacuum chamber is not opened in time to clean up the material deposited on the edge of the baffle gap, the material deposited on the edge of the gap will fall off and fall into the material under the baffle gap. This e-beam evaporation source also causes cross-contamination of materials.
  • CN 101985736A discloses a multi-station graded film plating equipment, comprising a drive module, a substrate, a workpiece disk, a mask mechanism and a uniform mechanism, the workpiece disk is located on the substrate, and the workpiece disk can rotate around its axis , which has a constant distance from the substrate.
  • a coating station is fixed on the workpiece plate; a coating hole is arranged on the substrate corresponding to the coating station; a mask mechanism is fixed between the coating station and the coating hole; The lower part of the coating hole is fixedly provided with a uniform mechanism on the base plate; the working section of the driving module is fixedly connected with the workpiece disc.
  • the equipment has a set of substrate transposition mechanism, the substrate to be plated can be automatically replaced in the vacuum chamber, and the non-uniform film plating can be realized through a specific mask mechanism.
  • one set of mask mechanism in this equipment can only coat one type of coating sheet, and different types of coating sheets need to be replaced with different mask mechanisms, and the operation is complicated.
  • CN 105887020A discloses a multi-evaporation source coating device and a coating method thereof.
  • a plurality of film thickness controllers are arranged in the vacuum coating chamber, and one of the film thickness controllers is arranged at the center of the workpiece umbrella frame for monitoring all the films.
  • the coating rate on the coating substrate, the rest of the film thickness controller and the evaporation source are in one-to-one correspondence to monitor and adjust the evaporation rate of each evaporation source respectively.
  • multiple evaporation sources are placed in the same chamber, and the number of evaporation sources is limited by the vacuum chamber. Based on the consideration of coating uniformity, it is difficult to install too many evaporation sources.
  • CN 1814855A discloses a multi-evaporation source system for preparing multi-component thin films, which includes a vacuum chamber.
  • the vacuum chamber is equipped with a plurality of electron guns to heat the evaporation sources.
  • Each electron gun evaporation source includes an electron gun, a sensor and a crucible.
  • Electromagnetic shielding devices are arranged between the two evaporation sources. In this application, by setting up an electromagnetic shielding device, a plurality of electron guns will not interfere with each other, so that a multi-component thin film can be prepared by using the electron gun.
  • this equipment needs to set up multiple electron guns and multiple evaporation sources in the vacuum chamber, which is easy to cause direct cross-contamination of materials.
  • the embodiments of the present application provide a high-flux thin-film preparation device that facilitates replacement of crucibles and applications thereof.
  • the high-flux thin-film preparation device for easy replacement of crucibles can facilitate the replacement of crucibles without destroying the vacuum state in the cavity.
  • the high-throughput thin film preparation device is beneficial to realize the vacuum coating of multiple materials on the same substrate, and can completely avoid the problem of cross-contamination of materials.
  • an embodiment of the present application provides a high-flux thin-film preparation device that facilitates crucible replacement, and the high-flux thin-film preparation device that facilitates crucible replacement includes an evaporation chamber and a storage chamber.
  • the evaporation chamber is communicated with the storage chamber through a soft connection pipeline; a cutoff piece is provided in the communication pipeline between the evaporation chamber and the storage chamber.
  • the evaporation chamber is provided with an evaporation source and a groove for placing the crucible.
  • the storage cavity is provided with a crucible storage rack and a manipulator; the manipulator is used for the transportation of the crucible between the groove and the crucible storage rack;
  • the crucible is a circular truncated crucible.
  • the high-throughput thin film preparation device for easy replacement of crucibles provided by the present application can realize the replacement of crucibles without breaking the vacuum through the arrangement of the evaporation chamber and the storage chamber, so as to realize the alternate coating of various materials under vacuum conditions.
  • the evaporation chamber is provided with an evaporation source and a groove for placing the crucible, and the crucible placed in the groove is a truncated crucible.
  • the evaporation source in the evaporation chamber described in this application includes an electron beam evaporation source and/or a laser evaporation source, and the evaporation source is used to heat the material in the crucible.
  • This application does not specifically limit the position of the evaporation source, as long as the crucible can be The heating of the inner material can be done.
  • the small diameter end of the truncated crucible is the bottom, and the side wall of the truncated crucible is in contact with the inside of the groove.
  • the use of the flexible connecting pipeline in the present application facilitates the leveling of the connecting pipeline between the evaporation chamber and the storage chamber, thereby facilitating the transport of the crucible by the manipulator between the evaporation source and the crucible storage rack.
  • the flexible connecting pipeline includes but is not limited to a corrugated pipe.
  • the cut-off piece described in this application is used to control the communication between the evaporation chamber and the storage cavity.
  • the cut-off piece is controlled to make the connection between the evaporation cavity and the storage cavity disconnected; when the crucible needs to be replaced, Then, the cut-off piece is controlled to communicate between the evaporation chamber and the storage chamber.
  • the shut-off member includes but is not limited to a shut-off valve.
  • the use of the manipulator for transporting the crucible between the evaporation source and the crucible storage rack in this application means that the manipulator can not only transport the crucible of the crucible storage rack of the storage cavity to the groove of the evaporation source, but also can transport the crucible in the groove of the evaporation source.
  • the crucibles are transported to the crucible storage rack of the storage chamber.
  • the crucible storage rack includes a support plate, a crucible holder disposed on the support plate, and a support shaft disposed at the bottom of the support plate; the support shaft passes through the storage cavity.
  • the support shaft is used for axial displacement of the crucible holder along the support shaft and/or rotation of the crucible holder along the axial direction of the support shaft.
  • the crucible storage rack moves up and down along the axial direction of the support shaft, and cooperates with the axial displacement and axial rotation of the manipulator to realize the picking and placing of the crucible on the crucible support;
  • the support shaft is used for the crucible support to rotate along the axial direction of the support shaft, the crucible support cooperates with the axial displacement and/or axial rotation of the manipulator to realize the pick and place of the crucible on the crucible support.
  • the support shaft is used for the axial displacement of the crucible support along the support shaft and the axial rotation of the crucible support along the support shaft, so that the crucible support and the manipulator can be matched more flexibly, and it is convenient for the manipulator to adjust the crucible support.
  • the picking and placing of crucibles at different positions improves the space utilization in the storage cavity.
  • the crucible support includes at least one layer of crucible storage platforms; the crucible storage platforms are used for placing truncated crucibles; the crucible storage platforms are supported by support columns.
  • the present application does not specifically limit the distances between two adjacent layers of crucible storage platforms and the crucible storage platforms at the bottommost layer and the support plate. Those skilled in the art can reasonably select the distance between the crucible storage table of two adjacent layers and the crucible storage table of the bottom layer and the support plate according to the height of the crucible and in order to facilitate the pick and place of the manipulator.
  • the crucible holder described in this application includes at least one layer of crucible storage table, for example, it can be one layer, two layers, three layers, four layers, five layers or ten layers, but not limited to the listed values, and other non-enumerated values within the value range The same applies to numerical values. Those skilled in the art can make reasonable settings according to the size of the storage cavity and the number of crucibles.
  • the crucible storage table is provided with at least 2 through holes for placing the truncated crucible; for example, there may be 2, 3, 4, 5, 6, 7, 8, 9 or 10 through holes but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
  • the manipulator includes a first displacement member and a second displacement member.
  • the first displacement member is penetrated through the storage cavity, the axial direction of the first displacement member is parallel to the axial direction of the support shaft, and the axial direction of the first displacement member is perpendicular to the axial direction of the second displacement member;
  • the first displacement member drives the second displacement member to displace along the axial direction of the first displacement member and/or drives the second displacement member to rotate along the axial direction of the first displacement member; the second displacement member is used for the crucible to be placed in the groove. and transport between crucible storage racks.
  • the arrangement of the first displacement piece in the present application can not only cooperate with the support shaft to realize the quick pick and place of the truncated crucible, but also realize the pick and place of the truncated crucible placed in the groove;
  • the arrangement can realize the movement of the truncated crucible between the evaporation chamber and the storage chamber.
  • the second displacement member can be displaced along the axial direction of the first displacement member, and the second displacement member can be rotated along the axial direction of the first displacement member, so that the second displacement member has different effects on the crucible support. Location of the truncated crucible.
  • the manipulator When the first displacement member drives the second displacement member to displace along the axial direction of the first displacement member, the manipulator cooperates with the axial rotation through the axial displacement of the support shaft, so that the second displacement member can pick and place the circular platform near the flexible connection pipeline.
  • the manipulator cooperates with the axial rotation through the axial displacement of the support shaft to realize the picking and placing of the truncated crucible at different positions of the crucible support. .
  • the second displacement member is provided with a notch matched with the truncated crucible.
  • the frustum-shaped crucible is a single-layer crucible; when the frustum-shaped crucible is placed in the groove, the frustum-shaped crucible is higher than the groove .
  • the circular frustum-shaped crucible is a single-layer crucible
  • the circular truncated crucible When the circular truncated crucible is placed in the groove, the circular truncated crucible is not higher than the groove;
  • the bottom of the groove is provided with at least three through holes for passing through the thimbles; the thimbles are used to push up the truncated crucible through the through holes.
  • the bottom of the groove is provided with at least three through holes for passing through the thimble, so as to ensure the stability of the crucible when the thimble pushes up the crucible.
  • the thimble When the truncated crucible is not higher than the groove, the thimble can be inserted through the through hole at the bottom of the groove, and the thimble can be used to lift the truncated crucible when the manipulator transfers the truncated crucible, so as to facilitate the second displacement member to the truncated crucible. crawl.
  • the number of through holes for passing the thimble provided at the bottom of the groove is at least 3, for example, it can be 3, 4, 5, 6, 8 or 10, but is not limited to the listed values , other non-recited values within the numerical range also apply.
  • the at least three through holes for passing through the thimble are axially symmetrically distributed along the central axis of the groove.
  • the circular frustum-shaped crucible includes an inner layer and a protective layer disposed outside the inner layer;
  • the inner layer is not higher than the groove, and the protective layer is higher than the groove.
  • the upper end of the truncated crucible needs to be higher than the top surface of the groove. At this time, due to uneven heating, it is easy to cause damage to the truncated crucible, thereby affecting the coating effect.
  • the circular truncated crucible includes an inner layer and a protective layer, the inner layer is not higher than the groove, and the protective layer is higher than the groove, which can not only ensure the uniform heating of the inner layer, but also facilitate the truncated crucible to be placed in the groove. pick and place.
  • the circular frustum-shaped crucible includes an inner layer and a protective layer disposed outside the inner layer;
  • the inner layer When the circular truncated crucible is placed in the groove, the inner layer does not rise above the groove, and the protective layer does not rise above the groove.
  • the bottom of the groove is provided with at least three through holes for passing through the thimbles; the thimbles are used to push up the truncated crucible through the through holes.
  • the bottom of the groove is provided with at least three through holes for passing through the thimble, so as to ensure the stability of the crucible when the thimble pushes up the crucible.
  • the thimble When the inner layer and the protective layer of the truncated crucible are not higher than the groove, the thimble can be inserted through the through hole at the bottom of the groove, and the thimble can be used to lift the truncated crucible when the manipulator transfers the truncated crucible, so as to facilitate the first step. Grab the truncated crucible by two displacement pieces.
  • the number of through holes for passing the thimble provided at the bottom of the groove is at least 3, for example, it can be 3, 4, 5, 6, 8 or 10, but is not limited to the listed values , other non-recited values within the numerical range also apply.
  • the at least three through holes for passing through the thimble are axially symmetrically distributed along the central axis of the groove.
  • the material of the inner layer described in this application is a conventional crucible material, and the material of the protective layer is a thermally conductive material.
  • the material used for the inner layer includes Al 2 O 3 or graphite.
  • the material used for the protective layer includes any one of molybdenum, tungsten or copper.
  • an embodiment of the present application provides an application of using the high-throughput thin film preparation device for easy replacement of crucibles described in the first aspect for coating, and the application includes the following steps:
  • the evaporation chamber is communicated with the storage chamber, and the crucible placed in the crucible storage rack is transferred to the groove through the cooperation of the crucible storage rack and the manipulator, so as to realize the placement of the crucible in the evaporation chamber;
  • the evaporation chamber is communicated with the storage chamber, and the crucible placed in the groove is transferred to the crucible storage rack through the cooperation of the crucible storage rack and the manipulator, so as to realize the taking out of the crucible in the evaporation chamber;
  • Step (1) and step (2) are in no particular order.
  • the non-communication between the evaporation chamber and the storage chamber is selectively controlled according to subsequent process requirements;
  • the communication or non-communication between the storage chambers is controlled by the shut-off.
  • the crucible when the crucible is placed in the groove, the crucible is higher than the groove. That is, when the circular truncated crucible is a single-layer crucible, when the circular truncated crucible is placed in the groove, the circular truncated crucible is higher than the groove; when the circular truncated crucible includes an inner layer and a protective layer, when the circular truncated crucible is placed in the groove, the inner The layer does not rise above the groove, and the protective layer rises above the groove.
  • the embodiments of the present application provide an application of using the high-throughput thin film preparation device for easy replacement of crucibles described in the second aspect to perform evaporation coating, and the application includes the following steps:
  • the evaporation chamber is communicated with the storage chamber, and the crucible placed in the crucible storage rack is transferred to the groove through the cooperation of the crucible storage rack and the manipulator, so as to realize the placement of the crucible in the evaporation chamber;
  • Step (1) and step (2) are in no particular order.
  • the non-communication between the evaporation chamber and the storage chamber is selectively controlled according to the needs of the subsequent process;
  • the communication or non-communication between the storage chambers is controlled by the shut-off.
  • the crucible when the crucible is placed in the groove, the crucible does not rise above the groove, and at this time, the bottom of the groove is provided with at least three through holes for passing through the thimble, and the thimble The crucible is pushed out of the groove, which is convenient for the manipulator to pick and place the crucible in the groove.
  • the truncated crucible When the truncated crucible is a single-layer crucible, when the truncated crucible is placed in the groove, the truncated crucible does not rise above the groove; when the truncated crucible includes an inner layer and a protective layer, when the truncated crucible is placed in the groove, the inner The layer does not rise above the groove, and the protective layer does not rise above the groove.
  • the high-flux thin film preparation device that is easy to replace the crucible provided by the embodiment of the application can realize the replacement of the circular frustum crucible under the vacuum environment through the setting of the storage cavity and the evaporation cavity, thereby realizing the alternate coating of various materials;
  • the crucible support is displaced along the axial direction of the support shaft through the support shaft, and the crucible support can be rotated along the axial direction of the support shaft, which is convenient for the robot to pick and place the truncated crucible at different positions of the crucible support, and improves the performance of the crucible support.
  • the second displacement member can be displaced along the axial direction of the first displacement member, and the second displacement member can be rotated along the axial direction of the first displacement member, so as to facilitate the second displacement Pick and place the truncated crucible at different positions of the crucible support frame;
  • the frustum-shaped crucible includes an inner layer and a protective layer arranged outside the inner layer, and when the frustum-shaped crucible is placed in the groove, the inner layer is not higher than the groove, and the protective layer is high
  • the groove can not only ensure the uniform heating of the inner layer, but also facilitate the taking and placing of the truncated crucible in the groove.
  • FIG. 1 is a schematic structural diagram of a high-throughput thin film preparation device that is convenient for crucible replacement provided by an embodiment of the present application;
  • FIG. 2 is a schematic structural diagram of a crucible storage rack provided in an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a manipulator provided in an embodiment of the present application.
  • Fig. 4 is the schematic diagram of thimble action in application example 5;
  • Fig. 5 is the schematic diagram when the truncated truncated crucible provided by embodiment 5-6 is placed in the groove;
  • Fig. 6 is the structural representation of the circular frustum crucible provided by embodiment 5-6;
  • FIG. 7 is a schematic structural diagram of the truncated crucible provided in Example 7.
  • FIG. 7 is a schematic structural diagram of the truncated crucible provided in Example 7.
  • This embodiment provides a high-flux thin-film preparation device that facilitates crucible replacement.
  • the schematic structural diagram of the high-flux thin-film preparation device that facilitates crucible replacement is shown in FIG. 1 , including an evaporation chamber 1 and a storage chamber 2 .
  • the evaporation chamber 1 is communicated with the storage chamber 2 through a soft connection pipeline 4;
  • the evaporation chamber 1 is provided with an electron beam evaporation source and a groove for placing the truncated crucible 2-1.
  • the storage cavity 2 is provided with a crucible storage rack 2-2 and a manipulator 2-3; the manipulator 2-3 is used for transporting the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
  • FIG. 2 The schematic structural diagram of the crucible storage rack 2-2 is shown in FIG. 2, which includes a support plate, a crucible support arranged on the support plate, and a support shaft 2-5 arranged at the bottom of the support plate; the support shaft 2-5 passes through the support plate. It is arranged in the storage cavity 2 for the axial displacement of the crucible support along the support shaft 2-5.
  • the crucible support includes two layers of crucible storage tables 2-4; the crucible storage table 2-4 is provided with a through hole for placing the truncated crucible 2-1; the crucible storage table 2-4 passes through the support column 2-8 support.
  • FIG. 3 The schematic structural diagram of the manipulator 2-3 is shown in FIG. 3, including a first displacement member 2-6 and a second displacement member 2-7.
  • the first displacement member 2-6 passes through the storage cavity 2, the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5, and the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5.
  • the axial direction of the second displacement member 2-7 is vertical.
  • the first displacement member 2-6 drives the second displacement member 2-7 to move along the axial direction of the first displacement member 2-6, and the first displacement member 2-6 can also drive the second displacement member 2-7 along the axial direction of the first displacement member 2-6.
  • the axial rotation of the first displacement member 2-6; the second displacement member 2-7 is used for the transportation of the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
  • the circular truncated crucible 2-1 used in this embodiment is a single-layer crucible with a truncated shape.
  • the circular truncated crucible 2-1 is placed in the groove, the circular truncated crucible 2-1 is higher than the groove.
  • Example 1 When this application example applies the high-throughput thin film preparation device provided in Example 1 for easy replacement of crucibles, firstly, the connection pipeline between the evaporation chamber 1 and the storage chamber 2 is leveled through the flexible connection pipeline 4; then the second displacement member 2-7 Under the action of the first displacement member 2-6, it rotates along the axial direction of the first displacement member 2-6, so that the second displacement member 2-6 rotates to the position of the frustum-shaped crucible 2-1 to be taken, and passes through the second displacement member 2-6.
  • the axial displacement of the first displacement member 2-6 is coordinated, and the truncated crucible 2-1 is placed in the groove; finally, the second displacement member 2-7 is displaced along its own axis and along the axis of the first displacement member 2-6.
  • the fit to the displacement returns to the storage chamber 2 , and then the shut-off member 3 is closed so that there is no communication between the evaporation chamber 1 and the storage chamber 2 .
  • the cut-off member 3 is first opened to communicate between the evaporation chamber 1 and the storage chamber 2;
  • the axial displacement of the displacement member 2-6 is coordinated to move to the evaporation chamber 1, and under the action of the axial displacement of the first displacement member 2-6, the second displacement member 2-7 moves the frustum-shaped crucible 2-1 out of the groove, Then, the truncated crucible 2-1 is transported to the storage chamber 2 through the second displacement member along its own axial displacement;
  • This application example applies the high-throughput thin film preparation device provided in Example 1 that facilitates the replacement of crucibles.
  • the difference from Application Example 1 is that in this application example, when the truncated crucible 2-1 is taken and placed, the crucible storage rack 2-2 is supported by The shaft 2-5 is displaced along the axial direction of the support shaft 2-5, so as to cooperate with the axial movement of the manipulator 2-3 along the first displacement member 2-6, which facilitates the taking and placing of the truncated crucible 2-1.
  • This embodiment provides a high-flux thin-film preparation device that facilitates crucible replacement.
  • the schematic structural diagram of the high-flux thin-film preparation device that facilitates crucible replacement is shown in FIG. 1 , including an evaporation chamber 1 and a storage chamber 2 .
  • the evaporation chamber 1 is communicated with the storage chamber 2 through a soft connection pipeline 4;
  • the evaporation chamber 1 is provided with a laser evaporation source and a groove for placing the truncated crucible 2-1.
  • the storage cavity 2 is provided with a crucible storage rack 2-2 and a manipulator 2-3; the manipulator 2-3 is used for transporting the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
  • FIG. 2 The schematic structural diagram of the crucible storage rack 2-2 is shown in FIG. 2, which includes a support plate, a crucible support arranged on the support plate, and a support shaft 2-5 arranged at the bottom of the support plate; the support shaft 2-5 passes through the support plate. It is arranged in the storage chamber 2 for the crucible holder to rotate along the axial direction of the support shaft 2-5.
  • the crucible support includes two layers of crucible storage tables 2-4; the crucible storage table 2-4 is provided with a through hole for placing the truncated crucible 2-1; the crucible storage table 2-4 passes through the support column 2-8 support.
  • FIG. 3 The schematic structural diagram of the manipulator 2-3 is shown in FIG. 3, including a first displacement member 2-6 and a second displacement member 2-7.
  • the first displacement member 2-6 passes through the storage cavity 2, the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5, and the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5.
  • the axial direction of the second displacement member 2-7 is vertical.
  • the first displacement member 2-6 drives the second displacement member 2-7 to move along the axial direction of the first displacement member 2-6, and the first displacement member 2-6 can also drive the second displacement member 2-7 along the axial direction of the first displacement member 2-6.
  • the axial rotation of the first displacement member 2-6; the second displacement member 2-7 is used for the transportation of the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
  • the circular truncated crucible 2-1 used in this embodiment is a single-layer crucible with a truncated shape.
  • the circular truncated crucible 2-1 is placed in the groove, the circular truncated crucible 2-1 is higher than the groove.
  • Example 2 When this application example applies the high-throughput thin film preparation device provided in Example 2 to facilitate the replacement of crucibles, firstly, the connection pipeline between the evaporation chamber 1 and the storage chamber 2 is leveled through the flexible connection pipeline 4; then the second displacement member 2-7 Under the action of the first displacement member 2-6, it rotates along the axial direction of the first displacement member 2-6, so that the second displacement member 2-6 rotates to the position of the frustum-shaped crucible 2-1 to be taken, and passes through the second displacement member 2-6.
  • the axial displacement along its own axis and the axial displacement along the first displacement member 2-6 are matched, and the truncated crucible 2-1 is taken out and replaced;
  • the second displacement member 2-7 rotates to the communication direction along the axial direction of the first displacement member 2-6 under the action of the first displacement member 2-6.
  • the coordination of the axial displacement of the first displacement member 2-6 is to place the frustum-shaped crucible 2-1 in the groove; finally, the second displacement member 2-7 is displaced along its own axis and along the axis of the first displacement member 2-6.
  • the fit to the displacement returns to the storage chamber 2 , and then the shut-off member 3 is closed so that there is no communication between the evaporation chamber 1 and the storage chamber 2 .
  • the cut-off member 3 is first opened to communicate between the evaporation chamber 1 and the storage chamber 2; the second displacement member 2-7 is displaced along its own axial direction and along the first
  • the axial displacement of the displacement member 2-6 is coordinated to move to the evaporation chamber 1, and under the action of the axial displacement of the first displacement member 2-6, the second displacement member 2-7 moves the frustum-shaped crucible 2-1 out of the groove, Then, the truncated crucible 2-1 is transported to the storage chamber 2 through the second displacement member along its own axial displacement; In coordination with the axial displacement, place the truncated crucible 2-1 on the crucible storage rack 2-2; repeat the steps of taking out the truncated crucible 2-1 to replace the truncated crucible 2-1 in the evaporation chamber 1.
  • This application example applies the high-throughput thin film preparation device provided in example 2 that is convenient for crucible replacement.
  • the difference from application example 3 is that when the truncated crucible 2-1 is taken and placed in this application example, the crucible storage rack 2-2 is supported by The shaft 2-5 rotates along the axial direction of the support shaft 2-5, so as to cooperate with the manipulator 2-3 to rotate and axially displace along the first displacement member 2-6, which is convenient for picking and placing the truncated crucible 2-1.
  • This embodiment provides a high-throughput thin film preparation device that is convenient for crucible replacement.
  • the truncated truncated crucible 2-1 used in this embodiment is a single-layer crucible with a truncated truncated shape, and the truncated truncated crucible When 2-1 is placed in the groove, the truncated crucible 2-1 is not higher than the groove.
  • the bottom of the groove is provided with three through holes for passing through the thimble 1-2, and the three through holes for passing through the thimble are along the groove The central axis of the axisymmetric distribution.
  • Example 3 When this application example applies the high-throughput thin film preparation device provided in Example 3 for easy replacement of crucibles, firstly, the connection pipeline between the evaporation chamber 1 and the storage chamber 2 is leveled through the flexible connection pipeline 4; then the second displacement member 2-7 Under the action of the first displacement member 2-6, it rotates along the axial direction of the first displacement member 2-6, so that the second displacement member 2-6 rotates to the position of the frustum-shaped crucible 2-1 to be taken, and passes through the second displacement member 2-6.
  • the axial displacement along its own axis and the axial displacement along the first displacement member 2-6 are matched, and the truncated crucible 2-1 is taken out and replaced;
  • the second displacement member 2-7 rotates to the communication direction along the axial direction of the first displacement member 2-6 under the action of the first displacement member 2-6.
  • the coordination of the axial displacement of the first displacement member 2-6 is to place the frustum-shaped crucible 2-1 in the groove; finally, the second displacement member 2-7 is displaced along its own axis and along the axis of the first displacement member 2-6.
  • the fit to the displacement returns to the storage chamber 2 , and then the shut-off member 3 is closed so that there is no communication between the evaporation chamber 1 and the storage chamber 2 .
  • the second displacement member 2-7 moves to the evaporation chamber 1 along the axial displacement of the second displacement member 2-7 along with the axial displacement of the first displacement member 2-6, and moves to the evaporation chamber 1 in the axial direction of the first displacement member 2-6.
  • the second displacement member 2-7 moves the frustum-shaped crucible 2-1 out of the groove, and then the frustum-shaped crucible 2-1 is transported to the storage chamber 2 by the second displacement member along its own axial displacement; then Through the cooperation between the axial displacement of the second displacement member 2-7 and the axial displacement of the first displacement member 2-6, the frustum-shaped crucible 2-1 is placed on the crucible storage rack 2-2; the frustum-shaped crucible is repeatedly taken out In step 2-1, the frustum-shaped crucible 2-1 in the evaporation chamber 1 is replaced.
  • This embodiment provides a high-flux thin-film preparation device that facilitates crucible replacement.
  • the schematic structural diagram of the high-flux thin-film preparation device that facilitates crucible replacement is shown in FIG. 1 , including an evaporation chamber 1 and a storage chamber 2 .
  • the evaporation chamber 1 is communicated with the storage chamber 2 through a soft connection pipeline 4;
  • the evaporation chamber 1 is provided with an electron beam evaporation source and a groove for placing the truncated crucible 2-1.
  • the storage cavity 2 is provided with a crucible storage rack 2-2 and a manipulator 2-3; the manipulator 2-3 is used for transporting the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
  • FIG. 2 The schematic structural diagram of the crucible storage rack 2-2 is shown in FIG. 2, which includes a support plate, a crucible support arranged on the support plate, and a support shaft 2-5 arranged at the bottom of the support plate; the support shaft 2-5 passes through the support plate. It is arranged in the storage chamber 2 for the crucible support to rotate along the axial direction of the support shaft 2-5 and to displace along the axial direction of the support shaft 2-5.
  • the crucible support includes two layers of crucible storage tables 2-4; the crucible storage table 2-4 is provided with a through hole for placing the truncated crucible 2-1; the crucible storage table 2-4 passes through the support column 2-8 support.
  • FIG. 3 The schematic structural diagram of the manipulator 2-3 is shown in FIG. 3, including a first displacement member 2-6 and a second displacement member 2-7.
  • the first displacement member 2-6 passes through the storage cavity 2, the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5, and the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5.
  • the axial direction of the second displacement member 2-7 is vertical.
  • the first displacement member 2-6 drives the second displacement member 2-7 to move along the axial direction of the first displacement member 2-6, and the first displacement member 2-6 can also drive the second displacement member 2-7 along the axial direction of the first displacement member 2-6.
  • the axial rotation of the first displacement member 2-6; the second displacement member 2-7 is used for the transportation of the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
  • the circular truncated crucible 2-1 used in this embodiment is a single-layer crucible with a truncated shape, and when the circular truncated crucible 2-1 is placed in the groove, the circular truncated crucible 2-1 is higher than the groove.
  • This application example applies the high-flux thin-film preparation device for easy replacement of crucibles provided in Example 4.
  • the difference between Example 4 and the high-flux thin-film preparation device for easy replacement of crucibles provided in Example 4 is that the crucible support provided in Example 4 It can displace along the axial direction of the support shaft 2-5, and can also rotate along the axial direction of the support shaft 2-5.
  • the crucible support can be selectively displaced and/or rotated in the axial direction of the support shaft 2-5, so as to cooperate with the manipulator 2-3
  • the truncated crucible 2-1 on the crucible storage rack 2-2 can be picked and placed.
  • the method of using the manipulator 2-3 to realize the picking and placing of the truncated crucible 2-1 on the crucible storage rack 2-2 refers to Application Example 2.
  • This embodiment provides a high-throughput thin film preparation device that facilitates crucible replacement.
  • the difference from Embodiment 1 is that the structure diagram of the truncated frustum crucible 2-1 provided in this embodiment is shown in FIG. 6 .
  • the crucible 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed outside the inner layer 2-1-1.
  • Figure 5 shows a schematic diagram of the circular truncated crucible 2-1 in this embodiment after being placed in the groove.
  • the material used for the inner layer 2-1-3 is Al 2 O 3
  • the material used for the protective layer 2-1-4 is tungsten.
  • the frustum-shaped crucible 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed outside the inner layer 2-1-1.
  • the inner layer 2-1-1 is not higher than the groove
  • the protective layer 2-1-2 is higher than the groove, which can not only ensure the uniform heating of the inner layer 2-1-1, but also facilitate the truncated crucible 2-1 in the Pick and place of grooves.
  • This embodiment provides a high-throughput thin film preparation device that facilitates crucible replacement.
  • the difference from Embodiment 1 is that the structure diagram of the truncated frustum crucible 2-1 provided in this embodiment is shown in FIG. 6 .
  • the crucible 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed outside the inner layer 2-1-1.
  • Figure 5 shows a schematic diagram of the circular truncated crucible 2-1 in this embodiment after being placed in the groove.
  • the material used for the inner layer 2-1-3 is graphite, and the material used for the protective layer 2-1-4 is molybdenum.
  • the frustum-shaped crucible 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed outside the inner layer 2-1-1.
  • the inner layer 2-1-1 is not higher than the groove
  • the protective layer 2-1-2 is higher than the groove, which can not only ensure the uniform heating of the inner layer 2-1-1, but also facilitate the truncated crucible 2-1 in the Pick and place of grooves.
  • This embodiment provides a high-throughput thin film preparation device that facilitates crucible replacement.
  • the difference from Embodiment 3 is that the structure diagram of the circular frustum crucible 2-1 used in this embodiment is shown in FIG. 7 .
  • 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed on the outside of the inner layer 2-1-1, and when the circular frustum crucible 2-1 is placed in the 1 is not higher than the groove, and the protective layer 2-1-2 is not higher than the groove.
  • the bottom of the groove is provided with three through holes for passing through the thimble 1-2, and the three through holes for passing through the thimble are along the groove The central axis of the axisymmetric distribution.
  • the frustum-shaped crucible 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed outside the inner layer 2-1-1, so that the inner layer 2-1-1 is heated evenly;
  • the arrangement of the three through holes for passing the thimble can facilitate the taking and placing of the truncated crucible 2-1.
  • the high-throughput thin film preparation device which is easy to replace the crucible, can realize the replacement of the truncated crucible in a vacuum environment through the arrangement of the storage chamber and the evaporation chamber, thereby realizing the alternate coating of various materials;
  • the crucible support is displaced along the axial direction of the support shaft through the support shaft, and the crucible support can be rotated along the axial direction of the support shaft, which is convenient for the manipulator to pick and place the truncated crucible in different positions of the crucible support, and improves the space in the storage cavity Utilization rate;
  • the second displacement member can be displaced along the axial direction of the first displacement member through the arrangement of the first displacement member, and the second displacement member can be rotated along the axial direction of the first displacement member, which is convenient for the second displacement member to Picking and placing of truncated truncated crucibles at different positions of the crucible support frame; in

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Abstract

Disclosed in the present disclosure are a high-flux film preparation device in which crucible replacement is convenient, and the use thereof. The device comprises an evaporation cavity and a storage cavity, wherein the evaporation cavity is in communication with the storage cavity by means of a flexible connecting pipeline; the pipeline, which communicates the evaporation cavity with the storage cavity, is provided with a stop member; the evaporation cavity is internally provided with an evaporation source, and a recess in which a crucible is placed; a crucible storage rack and a manipulator are arranged in the storage cavity; the manipulator is used for transporting the crucible between the recess and the crucible storage rack; and the crucible is a truncated cone-shaped crucible. According to the present application, by means of the arrangement of the storage cavity, the crucible can be replaced in a vacuum environment, such that the alternating coating of various materials is realized, thereby facilitating the vacuum coating of the same substrate by using various materials, and the problem of the cross contamination of materials can be completely prevented.

Description

一种便于更换坩埚的高通量薄膜制备装置及其应用A high-throughput thin film preparation device that is easy to replace the crucible and its application 技术领域technical field
本申请实施例属于镀膜技术领域,涉及一种镀膜装置,尤其涉及一种便于更换坩埚的高通量薄膜制备装置及其应用。The embodiments of the present application belong to the technical field of film coating, and relate to a film coating device, and in particular, to a high-flux thin film preparation device that facilitates replacement of crucibles and applications thereof.
背景技术Background technique
传统材料研究,一次实验制备一个样品,因此材料研发周期长。高通量材料芯片技术借鉴制造集成电路芯片的掩膜技术,在一块基底上一次实验可以制备成千上万种不同组分的材料,并快速表征成分、结构、物相,能大幅度缩短了新材料的研发周期。高通量材料芯片技术已经成为材料研发的一种最重要方法。In traditional material research, one sample is prepared for each experiment, so the material development cycle is long. High-throughput material chip technology draws on the mask technology for manufacturing integrated circuit chips. Thousands of materials with different components can be prepared in one experiment on a substrate, and the composition, structure, and phase can be quickly characterized, which can greatly shorten the time. The development cycle of new materials. High-throughput material chip technology has become one of the most important methods for material research and development.
高通量材料芯片技术通常需要使用多种材料交替镀膜。目前电子束蒸发使用的蒸发源可以同时放多种材料,蒸发源有一个带缺口的挡板,当某种材料需要蒸发时,电子束蒸发源通过旋转把需要蒸发的材料旋转到挡板缺口下,电子束加热在挡板缺口下的材料,从而蒸发镀膜。其它的材料被挡板遮挡避免由于蒸发产生材料之间的交叉污染。High-throughput material chip technology often requires alternate coating of multiple materials. At present, the evaporation source used in electron beam evaporation can store multiple materials at the same time. The evaporation source has a baffle with a gap. When a certain material needs to be evaporated, the electron beam evaporation source rotates the material to be evaporated under the baffle gap by rotating. , the electron beam heats the material under the baffle notch, thereby evaporating the coating. Other materials are shielded by baffles to avoid cross-contamination between materials due to evaporation.
虽然电子束蒸发源可以同时放多种材料,但是还是有限的,如果需要变换或添加材料时还需要打破真空开腔体。并且在镀膜过程中,蒸发的材料会沉积在挡板缺口边缘;如果不及时开真空腔体清理挡板缺口边缘沉积的材料,缺口边缘沉积的材料就会脱落、掉入挡板缺口下的材料中造成材料的交叉污染,因此这种电子束蒸发源还会造成材料的交叉污染。Although the electron beam evaporation source can store multiple materials at the same time, it is still limited. If it is necessary to change or add materials, it is necessary to break the vacuum and open the cavity. And during the coating process, the evaporated material will be deposited on the edge of the baffle gap; if the vacuum chamber is not opened in time to clean up the material deposited on the edge of the baffle gap, the material deposited on the edge of the gap will fall off and fall into the material under the baffle gap. This e-beam evaporation source also causes cross-contamination of materials.
CN 101985736A公开了一种多工位渐变薄膜镀制设备,包括驱动模块、基板、工件盘、掩膜机构及均匀机构,所述工件盘位于基板之上,所述工件盘可绕其轴心旋转,其与基板的间隔恒定。所述工件盘上固定设有镀膜工位;在所述基板上对应所述镀膜工位位置设置有镀膜孔;在所述镀膜工位与镀膜孔之间固定设有掩膜机构;在所述镀膜孔的下部于基板上固定设有均匀机构;所述驱动模块的工作段与工件盘固定相连。但是该设备具有一套基片换位机构,待镀基片在真空室内能够自动更换,通过特定的掩膜机构能够实现非均匀薄膜的镀制。但该设备中一套掩膜机构只能镀制一种类型的镀片,不同类型的镀片需要 更换不同的掩膜机构,操作复杂。CN 101985736A discloses a multi-station graded film plating equipment, comprising a drive module, a substrate, a workpiece disk, a mask mechanism and a uniform mechanism, the workpiece disk is located on the substrate, and the workpiece disk can rotate around its axis , which has a constant distance from the substrate. A coating station is fixed on the workpiece plate; a coating hole is arranged on the substrate corresponding to the coating station; a mask mechanism is fixed between the coating station and the coating hole; The lower part of the coating hole is fixedly provided with a uniform mechanism on the base plate; the working section of the driving module is fixedly connected with the workpiece disc. However, the equipment has a set of substrate transposition mechanism, the substrate to be plated can be automatically replaced in the vacuum chamber, and the non-uniform film plating can be realized through a specific mask mechanism. However, one set of mask mechanism in this equipment can only coat one type of coating sheet, and different types of coating sheets need to be replaced with different mask mechanisms, and the operation is complicated.
CN 105887020A公开了一种多蒸发源镀膜装置及其镀膜方法,所述真空镀膜室内设置有多个膜厚控制仪,其中一个所述膜厚控制仪设置在工件伞架的中心位置用于监控所述镀膜基片上的镀膜速率,其余的所述膜厚控制仪与蒸发源构成一一对应以分别监控和调节每个蒸发源的蒸发速率。但是该方法将多个蒸发源置于同一个腔室内,蒸发源的数量受到真空腔体的限制,基于镀膜均匀性的考虑,难以安装太多蒸发源。CN 105887020A discloses a multi-evaporation source coating device and a coating method thereof. A plurality of film thickness controllers are arranged in the vacuum coating chamber, and one of the film thickness controllers is arranged at the center of the workpiece umbrella frame for monitoring all the films. The coating rate on the coating substrate, the rest of the film thickness controller and the evaporation source are in one-to-one correspondence to monitor and adjust the evaporation rate of each evaporation source respectively. However, in this method, multiple evaporation sources are placed in the same chamber, and the number of evaporation sources is limited by the vacuum chamber. Based on the consideration of coating uniformity, it is difficult to install too many evaporation sources.
CN 1814855A公开了一种用于制备多组分薄膜的多蒸发源系统,包括真空室,真空室内布设由多个电子枪加热蒸发源,每个电子枪蒸发源包括一电子枪、一传感器和一坩埚,两两蒸发源之间均设置有电磁屏蔽装置。该申请通过设置电磁屏蔽装置,使多个电子枪之间不会互相干扰,从而可以用开制备多组分薄膜。但该设备需要在真空腔体中设置多个电子枪和多个蒸发源,容易造成材料直接交叉污染。CN 1814855A discloses a multi-evaporation source system for preparing multi-component thin films, which includes a vacuum chamber. The vacuum chamber is equipped with a plurality of electron guns to heat the evaporation sources. Each electron gun evaporation source includes an electron gun, a sensor and a crucible. Electromagnetic shielding devices are arranged between the two evaporation sources. In this application, by setting up an electromagnetic shielding device, a plurality of electron guns will not interfere with each other, so that a multi-component thin film can be prepared by using the electron gun. However, this equipment needs to set up multiple electron guns and multiple evaporation sources in the vacuum chamber, which is easy to cause direct cross-contamination of materials.
对此,提供一种能够实现便于更换坩埚且不需要破坏腔体内真空状态的便于更换坩埚的高通量薄膜制备装置,有利于实现多种材料对同一基片的真空镀膜,且能够完全避免材料的交叉污染问题。In this regard, to provide a high-throughput thin film preparation device that can easily replace the crucible without destroying the vacuum state in the cavity, which is convenient for the replacement of the crucible, which is conducive to realizing the vacuum coating of multiple materials on the same substrate, and can completely avoid the material cross-contamination problem.
发明内容SUMMARY OF THE INVENTION
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。The following is an overview of the topics detailed in this article. This summary is not intended to limit the scope of protection of the claims.
本申请实施例提供一种便于更换坩埚的高通量薄膜制备装置及其应用,所述便于更换坩埚的高通量薄膜制备装置能够实现便于更换坩埚且不需要破坏腔体内真空状态的便于更换坩埚的高通量薄膜制备装置,有利于实现多种材料对同一基片的真空镀膜,且能够完全避免材料的交叉污染问题。The embodiments of the present application provide a high-flux thin-film preparation device that facilitates replacement of crucibles and applications thereof. The high-flux thin-film preparation device for easy replacement of crucibles can facilitate the replacement of crucibles without destroying the vacuum state in the cavity. The high-throughput thin film preparation device is beneficial to realize the vacuum coating of multiple materials on the same substrate, and can completely avoid the problem of cross-contamination of materials.
第一方面,本申请实施例提供了一种便于更换坩埚的高通量薄膜制备装置,所述便于更换坩埚的高通量薄膜制备装置包括蒸发腔与存储腔。In a first aspect, an embodiment of the present application provides a high-flux thin-film preparation device that facilitates crucible replacement, and the high-flux thin-film preparation device that facilitates crucible replacement includes an evaporation chamber and a storage chamber.
所述蒸发腔通过软连接管路与存储腔连通;所述蒸发腔与存储腔的连通管路设置有截止件。The evaporation chamber is communicated with the storage chamber through a soft connection pipeline; a cutoff piece is provided in the communication pipeline between the evaporation chamber and the storage chamber.
所述蒸发腔内设置有蒸发源以及用于放置坩埚的凹槽。The evaporation chamber is provided with an evaporation source and a groove for placing the crucible.
所述存储腔内设置有坩埚存储架以及机械手;所述机械手用于坩埚在凹槽 以及坩埚存储架之间的运输;The storage cavity is provided with a crucible storage rack and a manipulator; the manipulator is used for the transportation of the crucible between the groove and the crucible storage rack;
所述坩埚为圆台状坩埚。The crucible is a circular truncated crucible.
本申请提供的便于更换坩埚的高通量薄膜制备装置通过蒸发腔与存储腔的设置,能够实现在不破坏真空的条件下对坩埚进行更换,从而实现真空条件下对多种材料的交替镀膜。所述蒸发腔内设置有蒸发源以及用于放置坩埚的凹槽,凹槽所放坩埚为圆台状坩埚。The high-throughput thin film preparation device for easy replacement of crucibles provided by the present application can realize the replacement of crucibles without breaking the vacuum through the arrangement of the evaporation chamber and the storage chamber, so as to realize the alternate coating of various materials under vacuum conditions. The evaporation chamber is provided with an evaporation source and a groove for placing the crucible, and the crucible placed in the groove is a truncated crucible.
本申请所述蒸发腔中的蒸发源包括电子束蒸发源和/或激光蒸发源,所述蒸发源用于加热坩埚内的物料,本申请不对蒸发源的位置做具体限定,只要能够实现对坩埚内物料的加热即可。The evaporation source in the evaporation chamber described in this application includes an electron beam evaporation source and/or a laser evaporation source, and the evaporation source is used to heat the material in the crucible. This application does not specifically limit the position of the evaporation source, as long as the crucible can be The heating of the inner material can be done.
将所述圆台状坩埚放置于凹槽内时,圆台状坩埚的小径端为底部,且圆台状坩埚的侧壁与凹槽的内部接触。When the truncated crucible is placed in the groove, the small diameter end of the truncated crucible is the bottom, and the side wall of the truncated crucible is in contact with the inside of the groove.
本申请所述软连接管路的使用,便于蒸发腔与存储腔连接管路的调平,从而便于机械手在蒸发源以及坩埚存储架之间运输坩埚。The use of the flexible connecting pipeline in the present application facilitates the leveling of the connecting pipeline between the evaporation chamber and the storage chamber, thereby facilitating the transport of the crucible by the manipulator between the evaporation source and the crucible storage rack.
作为优选的技术方案,所述软连接管路包括但不限于波纹管。As a preferred technical solution, the flexible connecting pipeline includes but is not limited to a corrugated pipe.
本申请所述截止件用于控制蒸发腔与存储腔之间的连通,当蒸发腔内进行真空镀膜时,控制截止件使蒸发腔与存储腔之间不连通;当需要对坩埚进行更换时,则控制截止件使蒸发腔与存储腔之间连通。The cut-off piece described in this application is used to control the communication between the evaporation chamber and the storage cavity. When vacuum coating is performed in the evaporation cavity, the cut-off piece is controlled to make the connection between the evaporation cavity and the storage cavity disconnected; when the crucible needs to be replaced, Then, the cut-off piece is controlled to communicate between the evaporation chamber and the storage chamber.
作为优选的技术方案,所述截止件包括但不限于截止阀。As a preferred technical solution, the shut-off member includes but is not limited to a shut-off valve.
本申请所述机械手用于坩埚在蒸发源以及坩埚存储架之间的运输是指,机械手不仅能够将存储腔的坩埚存储架的坩埚运输至蒸发源的凹槽,还能够将蒸发源凹槽内的坩埚运输至存储腔的坩埚存储架。The use of the manipulator for transporting the crucible between the evaporation source and the crucible storage rack in this application means that the manipulator can not only transport the crucible of the crucible storage rack of the storage cavity to the groove of the evaporation source, but also can transport the crucible in the groove of the evaporation source. The crucibles are transported to the crucible storage rack of the storage chamber.
优选地,所述坩埚存储架包括支撑板、设置于支撑板上的坩埚支架以及设置于支撑板底部的支撑轴;所述支撑轴穿设于存储腔。Preferably, the crucible storage rack includes a support plate, a crucible holder disposed on the support plate, and a support shaft disposed at the bottom of the support plate; the support shaft passes through the storage cavity.
所述支撑轴用于坩埚支架沿支撑轴的轴向位移和/或坩埚支架沿支撑轴的轴向旋转。The support shaft is used for axial displacement of the crucible holder along the support shaft and/or rotation of the crucible holder along the axial direction of the support shaft.
所述支撑轴用于坩埚支架沿支撑轴的轴向位移时,坩埚存储架沿支撑轴的轴向上下运动,配合机械手的轴向位移与轴向旋转,实现对坩埚支架上坩埚的取放;所述支撑轴用于坩埚支架沿支撑轴的轴向旋转时,坩埚支架配合机械手的轴向位移和/或轴向旋转实现对坩埚支架上坩埚的取放。When the support shaft is used for the axial displacement of the crucible support along the support shaft, the crucible storage rack moves up and down along the axial direction of the support shaft, and cooperates with the axial displacement and axial rotation of the manipulator to realize the picking and placing of the crucible on the crucible support; When the support shaft is used for the crucible support to rotate along the axial direction of the support shaft, the crucible support cooperates with the axial displacement and/or axial rotation of the manipulator to realize the pick and place of the crucible on the crucible support.
作为进一步优选的技术方案,所述支撑轴用于坩埚支架沿支撑轴的轴向位 移和坩埚支架沿支撑轴的轴向旋转,从而可以使坩埚支架与机械手更加灵活的配合,便于机械手对坩埚支架不同位置坩埚的取放,提高了存储腔内的空间利用率。As a further preferred technical solution, the support shaft is used for the axial displacement of the crucible support along the support shaft and the axial rotation of the crucible support along the support shaft, so that the crucible support and the manipulator can be matched more flexibly, and it is convenient for the manipulator to adjust the crucible support. The picking and placing of crucibles at different positions improves the space utilization in the storage cavity.
优选地,所述坩埚支架包括至少1层坩埚存储台;所述坩埚存储台用于放置圆台状坩埚;所述坩埚存储台通过支撑柱支撑。Preferably, the crucible support includes at least one layer of crucible storage platforms; the crucible storage platforms are used for placing truncated crucibles; the crucible storage platforms are supported by support columns.
本申请不对相邻两层坩埚存储台以及最底层坩埚存储台与支撑板之间的距离进行具体限定。本领域技术人员能够根据坩埚的高度以及为了便于机械手的取放,能够对相邻两层坩埚存储台以及最底层坩埚存储台与支撑板之间的距离进行合理地选择。The present application does not specifically limit the distances between two adjacent layers of crucible storage platforms and the crucible storage platforms at the bottommost layer and the support plate. Those skilled in the art can reasonably select the distance between the crucible storage table of two adjacent layers and the crucible storage table of the bottom layer and the support plate according to the height of the crucible and in order to facilitate the pick and place of the manipulator.
本申请所述坩埚支架包括至少1层坩埚存储台,例如可以是1层、2层、3层、4层、5层或10层,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。本领域技术人员能够根据存储腔的大小以及坩埚的数量进行合理地设置。The crucible holder described in this application includes at least one layer of crucible storage table, for example, it can be one layer, two layers, three layers, four layers, five layers or ten layers, but not limited to the listed values, and other non-enumerated values within the value range The same applies to numerical values. Those skilled in the art can make reasonable settings according to the size of the storage cavity and the number of crucibles.
优选地,,所述坩埚存储台设置有放置圆台状坩埚的至少2个通孔;例如可以是2个、3个、4个、5个、6个、7个、8个、9个或10个,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。Preferably, the crucible storage table is provided with at least 2 through holes for placing the truncated crucible; for example, there may be 2, 3, 4, 5, 6, 7, 8, 9 or 10 through holes but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
本领域技术人员能够根据圆台状坩埚的尺寸大小对通孔的数量以及尺寸进行合理地设置。Those skilled in the art can reasonably set the number and size of the through holes according to the size of the truncated crucible.
优选地,所述机械手包括第一位移件与第二位移件。Preferably, the manipulator includes a first displacement member and a second displacement member.
所述第一位移件穿设于存储腔,所述第一位移件的轴向与支撑轴的轴向平行,第一位移件的轴向与第二位移件的轴向垂直;The first displacement member is penetrated through the storage cavity, the axial direction of the first displacement member is parallel to the axial direction of the support shaft, and the axial direction of the first displacement member is perpendicular to the axial direction of the second displacement member;
所述第一位移件带动第二位移件沿第一位移件的轴向位移和/或带动第二位移件沿第一位移件的轴向旋转;所述第二位移件用于坩埚在凹槽以及坩埚存储架之间的运输。The first displacement member drives the second displacement member to displace along the axial direction of the first displacement member and/or drives the second displacement member to rotate along the axial direction of the first displacement member; the second displacement member is used for the crucible to be placed in the groove. and transport between crucible storage racks.
本申请所述第一位移件的设置不仅能够与支撑轴配合,实现对圆台状坩埚的快速取放,还能够实现对放置于凹槽内圆台状坩埚的取放;所述第二位移件的设置则能够实现圆台状坩埚在蒸发腔与存储腔之间的移动。The arrangement of the first displacement piece in the present application can not only cooperate with the support shaft to realize the quick pick and place of the truncated crucible, but also realize the pick and place of the truncated crucible placed in the groove; The arrangement can realize the movement of the truncated crucible between the evaporation chamber and the storage chamber.
本申请通过第一位移件的设置使第二位移件沿第一位移件的轴向位移,且能够使第二位移件沿第一位移件的轴向旋转,便于第二位移件对坩埚支架不同位置圆台状坩埚的取放。In the present application, through the arrangement of the first displacement member, the second displacement member can be displaced along the axial direction of the first displacement member, and the second displacement member can be rotated along the axial direction of the first displacement member, so that the second displacement member has different effects on the crucible support. Location of the truncated crucible.
当第一位移件带动第二位移件沿第一位移件的轴向位移时,机械手通过支撑轴的轴向位移与轴向旋转配合,使第二位移件取放靠近软连接管路处的圆台状坩埚;当第一位移件带动第二位移件沿第一位移件的轴向旋转时,机械手通过支撑轴的轴向位移与轴向旋转配合,实现对坩埚支架不同位置圆台状坩埚的取放。When the first displacement member drives the second displacement member to displace along the axial direction of the first displacement member, the manipulator cooperates with the axial rotation through the axial displacement of the support shaft, so that the second displacement member can pick and place the circular platform near the flexible connection pipeline. When the first displacement member drives the second displacement member to rotate along the axial direction of the first displacement member, the manipulator cooperates with the axial rotation through the axial displacement of the support shaft to realize the picking and placing of the truncated crucible at different positions of the crucible support. .
优选地,所述第二位移件设置有与圆台状坩埚配合的凹口。Preferably, the second displacement member is provided with a notch matched with the truncated crucible.
作为本申请所述便于更换坩埚的高通量薄膜制备装置的优选技术方案之一,所述圆台状坩埚为单层坩埚;所述圆台状坩埚放置于凹槽时,圆台状坩埚高出凹槽。As one of the preferred technical solutions of the high-throughput thin film preparation device for easy replacement of crucibles described in this application, the frustum-shaped crucible is a single-layer crucible; when the frustum-shaped crucible is placed in the groove, the frustum-shaped crucible is higher than the groove .
本申请通过使圆台状坩埚高出凹槽,便于机械手对圆台状坩埚的取放。In the present application, by making the truncated crucible higher than the groove, it is convenient for the manipulator to pick and place the truncated crucible.
作为本申请所述便于更换坩埚的高通量薄膜制备装置的优选技术方案之二,所述圆台状坩埚为单层坩埚;As the second preferred technical solution of the high-throughput thin film preparation device that is easy to replace the crucible described in this application, the circular frustum-shaped crucible is a single-layer crucible;
所述圆台状坩埚放置于凹槽时,圆台状坩埚不高出凹槽;When the circular truncated crucible is placed in the groove, the circular truncated crucible is not higher than the groove;
所述凹槽的底部设置有至少3个用于穿过顶针的通孔;所述顶针用于穿过通孔顶起圆台状坩埚。The bottom of the groove is provided with at least three through holes for passing through the thimbles; the thimbles are used to push up the truncated crucible through the through holes.
所述凹槽的底部设置至少3个用于穿过顶针的通孔,保证顶针顶起坩埚时,坩埚的稳定性。The bottom of the groove is provided with at least three through holes for passing through the thimble, so as to ensure the stability of the crucible when the thimble pushes up the crucible.
圆台状坩埚不高出凹槽时,通过在凹槽底部通过通孔穿设顶针,能够在机械手转移圆台状坩埚时,使用顶针将圆台状坩埚顶起,从而便于第二位移件对圆台状坩埚的抓取。When the truncated crucible is not higher than the groove, the thimble can be inserted through the through hole at the bottom of the groove, and the thimble can be used to lift the truncated crucible when the manipulator transfers the truncated crucible, so as to facilitate the second displacement member to the truncated crucible. crawl.
所述凹槽底部设置的用于穿过顶针的通孔的数量为至少3个,例如可以是3个、4个、5个、6个、8个或10个,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。The number of through holes for passing the thimble provided at the bottom of the groove is at least 3, for example, it can be 3, 4, 5, 6, 8 or 10, but is not limited to the listed values , other non-recited values within the numerical range also apply.
优选地,所述至少3个用于穿过顶针的通孔沿所述凹槽的中心轴轴对称分布。Preferably, the at least three through holes for passing through the thimble are axially symmetrically distributed along the central axis of the groove.
作为本申请所述便于更换坩埚的高通量薄膜制备装置的优选技术方案之三,所述圆台状坩埚包括内层以及设置于内层外侧的保护层;As the third preferred technical solution of the high-throughput thin film preparation device for easy replacement of crucibles described in this application, the circular frustum-shaped crucible includes an inner layer and a protective layer disposed outside the inner layer;
所述圆台状坩埚放置于凹槽时,内层不高出凹槽,保护层高出凹槽。When the circular truncated crucible is placed in the groove, the inner layer is not higher than the groove, and the protective layer is higher than the groove.
为了便于圆台状坩埚在凹槽内的取放,需要圆台状坩埚的上端高出凹槽的顶面,此时由于受热不均匀,容易造成圆台状坩埚的损坏,从而影响镀膜效果。 本申请通过使圆台状坩埚包括内层与保护层层,并使内层不高出凹槽,保护层高出凹槽,既能够保证内层的受热均匀,又能够便于圆台状坩埚在凹槽的取放。In order to facilitate the taking and placing of the truncated crucible in the groove, the upper end of the truncated crucible needs to be higher than the top surface of the groove. At this time, due to uneven heating, it is easy to cause damage to the truncated crucible, thereby affecting the coating effect. In the present application, the circular truncated crucible includes an inner layer and a protective layer, the inner layer is not higher than the groove, and the protective layer is higher than the groove, which can not only ensure the uniform heating of the inner layer, but also facilitate the truncated crucible to be placed in the groove. pick and place.
作为本申请所述便于更换坩埚的高通量薄膜制备装置的优选技术方案之四,所述圆台状坩埚包括内层以及设置于内层外侧的保护层;As the fourth preferred technical solution of the high-flux thin-film preparation device for easy replacement of crucibles described in this application, the circular frustum-shaped crucible includes an inner layer and a protective layer disposed outside the inner layer;
所述圆台状坩埚放置于凹槽时,内层不高出凹槽,保护层不高出凹槽。When the circular truncated crucible is placed in the groove, the inner layer does not rise above the groove, and the protective layer does not rise above the groove.
所述凹槽的底部设置有至少3个用于穿过顶针的通孔;所述顶针用于穿过通孔顶起圆台状坩埚。The bottom of the groove is provided with at least three through holes for passing through the thimbles; the thimbles are used to push up the truncated crucible through the through holes.
所述凹槽的底部设置至少3个用于穿过顶针的通孔,保证顶针顶起坩埚时,坩埚的稳定性。The bottom of the groove is provided with at least three through holes for passing through the thimble, so as to ensure the stability of the crucible when the thimble pushes up the crucible.
圆台状坩埚的内层与保护层均不高出凹槽时,通过在凹槽底部通过通孔穿设顶针,能够在机械手转移圆台状坩埚时,使用顶针将圆台状坩埚顶起,从而便于第二位移件对圆台状坩埚的抓取。When the inner layer and the protective layer of the truncated crucible are not higher than the groove, the thimble can be inserted through the through hole at the bottom of the groove, and the thimble can be used to lift the truncated crucible when the manipulator transfers the truncated crucible, so as to facilitate the first step. Grab the truncated crucible by two displacement pieces.
所述凹槽底部设置的用于穿过顶针的通孔的数量为至少3个,例如可以是3个、4个、5个、6个、8个或10个,但不限于所列举的数值,数值范围内其它未列举的数值同样适用。The number of through holes for passing the thimble provided at the bottom of the groove is at least 3, for example, it can be 3, 4, 5, 6, 8 or 10, but is not limited to the listed values , other non-recited values within the numerical range also apply.
优选地,所述至少3个用于穿过顶针的通孔沿所述凹槽的中心轴轴对称分布。Preferably, the at least three through holes for passing through the thimble are axially symmetrically distributed along the central axis of the groove.
本申请所述内层的材料为常规坩埚材料,所述保护层的材料为导热材料。The material of the inner layer described in this application is a conventional crucible material, and the material of the protective layer is a thermally conductive material.
优选地,所述内层所用材料包括Al 2O 3或石墨。 Preferably, the material used for the inner layer includes Al 2 O 3 or graphite.
优选地,所述保护层所用材料包括钼、钨或铜中的任意一种。Preferably, the material used for the protective layer includes any one of molybdenum, tungsten or copper.
第二方面,本申请实施例提供了一种利用第一方面所述的便于更换坩埚的高通量薄膜制备装置进行镀膜的应用,所述应用包括如下步骤:In a second aspect, an embodiment of the present application provides an application of using the high-throughput thin film preparation device for easy replacement of crucibles described in the first aspect for coating, and the application includes the following steps:
(1)真空条件下,使蒸发腔与存储腔连通,通过坩埚存储架与机械手的配合,将放置于坩埚存储架的坩埚转移至凹槽,实现蒸发腔内坩埚的放置;(1) under vacuum conditions, the evaporation chamber is communicated with the storage chamber, and the crucible placed in the crucible storage rack is transferred to the groove through the cooperation of the crucible storage rack and the manipulator, so as to realize the placement of the crucible in the evaporation chamber;
(2)真空条件下,使蒸发腔与存储腔连通,通过坩埚存储架与机械手的配合,将放置于凹槽的坩埚转移至坩埚存储架,实现蒸发腔内坩埚的取出;(2) under vacuum conditions, the evaporation chamber is communicated with the storage chamber, and the crucible placed in the groove is transferred to the crucible storage rack through the cooperation of the crucible storage rack and the manipulator, so as to realize the taking out of the crucible in the evaporation chamber;
步骤(1)与步骤(2)不分先后顺序。Step (1) and step (2) are in no particular order.
本申请第二方面所述应用中,在实现蒸发腔内坩埚的放置或蒸发腔内坩埚的取出后,根据后续工艺需要选择性地控制蒸发腔与存储腔之间不连通;所述蒸发腔与存储腔之间的连通或不连通由截止件控制。In the application described in the second aspect of the present application, after placing the crucible in the evaporation chamber or taking out the crucible in the evaporation chamber, the non-communication between the evaporation chamber and the storage chamber is selectively controlled according to subsequent process requirements; The communication or non-communication between the storage chambers is controlled by the shut-off.
优选地,本申请第二方面所述应用中,坩埚放置于凹槽内时,坩埚高出凹槽。即当圆台状坩埚为单层坩埚时,圆台状坩埚放置于凹槽时,圆台状坩埚高出凹槽;当圆台状坩埚包括内层以及保护层时,圆台状坩埚放置于凹槽时,内层不高出凹槽,保护层高出凹槽。Preferably, in the application described in the second aspect of the present application, when the crucible is placed in the groove, the crucible is higher than the groove. That is, when the circular truncated crucible is a single-layer crucible, when the circular truncated crucible is placed in the groove, the circular truncated crucible is higher than the groove; when the circular truncated crucible includes an inner layer and a protective layer, when the circular truncated crucible is placed in the groove, the inner The layer does not rise above the groove, and the protective layer rises above the groove.
第三方面,本申请实施例提供了一种利用第二方面所述的便于更换坩埚的高通量薄膜制备装置进行蒸发镀膜的应用,所述应用包括如下步骤:In a third aspect, the embodiments of the present application provide an application of using the high-throughput thin film preparation device for easy replacement of crucibles described in the second aspect to perform evaporation coating, and the application includes the following steps:
(1)真空条件下,使蒸发腔与存储腔连通,通过坩埚存储架与机械手的配合,将放置于坩埚存储架的坩埚转移至凹槽,实现蒸发腔内坩埚的放置;(1) under vacuum conditions, the evaporation chamber is communicated with the storage chamber, and the crucible placed in the crucible storage rack is transferred to the groove through the cooperation of the crucible storage rack and the manipulator, so as to realize the placement of the crucible in the evaporation chamber;
(2)真空条件下,使蒸发腔与存储腔连通,利用顶针将坩埚顶出凹槽,然后通过坩埚存储架与机械手的配合,将放置于凹槽的坩埚转移至坩埚存储架,实现蒸发腔内坩埚的取出;(2) Under vacuum conditions, connect the evaporation chamber with the storage chamber, use the thimble to push the crucible out of the groove, and then transfer the crucible placed in the groove to the crucible storage rack through the cooperation of the crucible storage rack and the manipulator to realize the evaporation chamber Take out the inner crucible;
步骤(1)与步骤(2)不分先后顺序。Step (1) and step (2) are in no particular order.
本申请第三方面所述应用中,在实现蒸发腔内坩埚的放置或蒸发腔内坩埚的取出后,根据后续工艺需要选择性地控制蒸发腔与存储腔之间不连通;所述蒸发腔与存储腔之间的连通或不连通由截止件控制。In the application described in the third aspect of the present application, after placing the crucible in the evaporation chamber or taking out the crucible in the evaporation chamber, the non-communication between the evaporation chamber and the storage chamber is selectively controlled according to the needs of the subsequent process; The communication or non-communication between the storage chambers is controlled by the shut-off.
优选地,本申请第三方面所述应用中,坩埚放置于凹槽内时,坩埚不高出凹槽,此时凹槽底部设置于至少3个用于穿过顶针的通孔,通过顶针将坩埚顶出凹槽,从而便于机械手对凹槽内坩埚的取放。当圆台状坩埚为单层坩埚时,圆台状坩埚放置于凹槽时,圆台状坩埚不高出凹槽;当圆台状坩埚包括内层以及保护层时,圆台状坩埚放置于凹槽时,内层不高出凹槽,保护层不高出凹槽。Preferably, in the application described in the third aspect of the present application, when the crucible is placed in the groove, the crucible does not rise above the groove, and at this time, the bottom of the groove is provided with at least three through holes for passing through the thimble, and the thimble The crucible is pushed out of the groove, which is convenient for the manipulator to pick and place the crucible in the groove. When the truncated crucible is a single-layer crucible, when the truncated crucible is placed in the groove, the truncated crucible does not rise above the groove; when the truncated crucible includes an inner layer and a protective layer, when the truncated crucible is placed in the groove, the inner The layer does not rise above the groove, and the protective layer does not rise above the groove.
相对于相关技术,本申请具有以下有益效果:Compared with the related art, the present application has the following beneficial effects:
(1)本申请实施例提供的便于更换坩埚的高通量薄膜制备装置通过存储腔与蒸发腔的设置,能够实现在真空环境下对圆台状坩埚进行更换,从而实现多种材料的交替镀膜;(1) The high-flux thin film preparation device that is easy to replace the crucible provided by the embodiment of the application can realize the replacement of the circular frustum crucible under the vacuum environment through the setting of the storage cavity and the evaporation cavity, thereby realizing the alternate coating of various materials;
(2)本申请实施例通过支撑轴使坩埚支架沿支撑轴的轴向位移,且能够使坩埚支架沿支撑轴的轴向旋转,便于机械手对坩埚支架不同位置圆台状坩埚的取放,提高了存储腔内的空间利用率;(2) In the embodiment of the present application, the crucible support is displaced along the axial direction of the support shaft through the support shaft, and the crucible support can be rotated along the axial direction of the support shaft, which is convenient for the robot to pick and place the truncated crucible at different positions of the crucible support, and improves the performance of the crucible support. Space utilization in the storage cavity;
(3)本申请实施例通过第一位移件的设置使第二位移件沿第一位移件的轴向位移,且能够使第二位移件沿第一位移件的轴向旋转,便于第二位移件对坩埚支撑架不同位置圆台状坩埚的取放;(3) In the embodiment of the present application, through the arrangement of the first displacement member, the second displacement member can be displaced along the axial direction of the first displacement member, and the second displacement member can be rotated along the axial direction of the first displacement member, so as to facilitate the second displacement Pick and place the truncated crucible at different positions of the crucible support frame;
(4)本申请实施例通过使述圆台状坩埚包括内层以及设置于内层外侧的保护层,并使所述圆台状坩埚放置于凹槽时,内层不高出凹槽,保护层高出凹槽,既能够保证内层的受热均匀,又能够便于圆台状坩埚在凹槽的取放。(4) In the embodiment of the present application, the frustum-shaped crucible includes an inner layer and a protective layer arranged outside the inner layer, and when the frustum-shaped crucible is placed in the groove, the inner layer is not higher than the groove, and the protective layer is high The groove can not only ensure the uniform heating of the inner layer, but also facilitate the taking and placing of the truncated crucible in the groove.
在阅读并理解了附图和详细描述后,可以明白其他方面。Other aspects will become apparent upon reading and understanding of the drawings and detailed description.
附图说明Description of drawings
附图用来提供对本文技术方案的进一步理解,并且构成说明书的一部分,与本申请的实施例一起用于解释本文的技术方案,并不构成对本文技术方案的限制。The accompanying drawings are used to provide a further understanding of the technical solutions herein, and constitute a part of the specification, and together with the embodiments of the present application, they are used to explain the technical solutions herein, and do not constitute a limitation on the technical solutions herein.
图1为本申请实施例提供的便于更换坩埚的高通量薄膜制备装置的结构示意图;1 is a schematic structural diagram of a high-throughput thin film preparation device that is convenient for crucible replacement provided by an embodiment of the present application;
图2为本申请实施例提供的坩埚存储架的结构示意图;2 is a schematic structural diagram of a crucible storage rack provided in an embodiment of the present application;
图3为本申请实施例提供的机械手的结构示意图;3 is a schematic structural diagram of a manipulator provided in an embodiment of the present application;
图4为应用例5中顶针作用的示意图;Fig. 4 is the schematic diagram of thimble action in application example 5;
图5为实施例5-6提供的圆台状坩埚放置于凹槽时的示意图;Fig. 5 is the schematic diagram when the truncated truncated crucible provided by embodiment 5-6 is placed in the groove;
图6为实施例5-6提供的圆台状坩埚的结构示意图;Fig. 6 is the structural representation of the circular frustum crucible provided by embodiment 5-6;
图7为实施例7提供的圆台状坩埚的结构示意图。FIG. 7 is a schematic structural diagram of the truncated crucible provided in Example 7. FIG.
其中:1,蒸发腔;1-2,顶针;1-1,蒸发源;2,存储腔;2-1,圆台状坩埚;2-1-1,内层;2-1-2,保护层;2-2,坩埚存储架;2-3,机械手;2-4,坩埚存储台;2-5,支撑轴;2-6,第一位移件;2-7,第二位移件;2-8,支撑柱;3,截止件;4,软连接管路。Among them: 1, evaporation chamber; 1-2, thimble; 1-1, evaporation source; 2, storage chamber; 2-1, frustum crucible; 2-1-1, inner layer; 2-1-2, protective layer ; 2-2, crucible storage rack; 2-3, manipulator; 2-4, crucible storage table; 2-5, support shaft; 2-6, first displacement piece; 2-7, second displacement piece; 2- 8, support column; 3, cut-off piece; 4, flexible connection pipeline.
具体实施方式Detailed ways
下面通过具体实施方式来进一步说明本申请的技术方案。本领域技术人员应该明了,所述实施例仅仅是帮助理解本申请,不应视为对本申请的具体限制。The technical solutions of the present application are further described below through specific embodiments. It should be understood by those skilled in the art that the embodiments are only for helping the understanding of the present application, and should not be regarded as a specific limitation of the present application.
实施例1Example 1
本实施例提供了一种便于更换坩埚的高通量薄膜制备装置,所述便于更换坩埚的高通量薄膜制备装置的结构示意图如图1所示,包括蒸发腔1与存储腔2。This embodiment provides a high-flux thin-film preparation device that facilitates crucible replacement. The schematic structural diagram of the high-flux thin-film preparation device that facilitates crucible replacement is shown in FIG. 1 , including an evaporation chamber 1 and a storage chamber 2 .
所述蒸发腔1通过软连接管路4与存储腔2连通;所述蒸发腔1与存储腔2的连通管路设置有截止件3。The evaporation chamber 1 is communicated with the storage chamber 2 through a soft connection pipeline 4;
所述蒸发腔1内设置有电子束蒸发源以及用于放置圆台状坩埚2-1的凹槽。The evaporation chamber 1 is provided with an electron beam evaporation source and a groove for placing the truncated crucible 2-1.
所述存储腔2内设置有坩埚存储架2-2以及机械手2-3;所述机械手2-3用于圆台状坩埚2-1在凹槽以及坩埚存储架2-2之间的运输。The storage cavity 2 is provided with a crucible storage rack 2-2 and a manipulator 2-3; the manipulator 2-3 is used for transporting the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
所述坩埚存储架2-2的结构示意图如图2所示,包括支撑板、设置于支撑板上的坩埚支架以及设置于支撑板底部的支撑轴2-5;所述支撑轴2-5穿设于存储腔2,用于坩埚支架沿支撑轴2-5的轴向位移。The schematic structural diagram of the crucible storage rack 2-2 is shown in FIG. 2, which includes a support plate, a crucible support arranged on the support plate, and a support shaft 2-5 arranged at the bottom of the support plate; the support shaft 2-5 passes through the support plate. It is arranged in the storage cavity 2 for the axial displacement of the crucible support along the support shaft 2-5.
所述坩埚支架包括2层坩埚存储台2-4;所述坩埚存储台2-4设置有用于放置圆台状坩埚2-1的通孔;所述坩埚存储台2-4通过支撑柱2-8支撑。The crucible support includes two layers of crucible storage tables 2-4; the crucible storage table 2-4 is provided with a through hole for placing the truncated crucible 2-1; the crucible storage table 2-4 passes through the support column 2-8 support.
所述机械手2-3的结构示意图如图3所示,包括第一位移件2-6与第二位移件2-7。The schematic structural diagram of the manipulator 2-3 is shown in FIG. 3, including a first displacement member 2-6 and a second displacement member 2-7.
所述第一位移件2-6穿设于存储腔2,所述第一位移件2-6的轴向与支撑轴2-5的轴向平行,第一位移件2-6的轴向与第二位移件2-7的轴向垂直。所述第一位移件2-6带动第二位移件2-7沿第一位移件2-6的轴向位移,所述第一位移件2-6还能够带动第二位移件2-7沿第一位移件2-6的轴向旋转;所述第二位移件2-7用于圆台状坩埚2-1在凹槽以及坩埚存储架2-2之间的运输。The first displacement member 2-6 passes through the storage cavity 2, the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5, and the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5. The axial direction of the second displacement member 2-7 is vertical. The first displacement member 2-6 drives the second displacement member 2-7 to move along the axial direction of the first displacement member 2-6, and the first displacement member 2-6 can also drive the second displacement member 2-7 along the axial direction of the first displacement member 2-6. The axial rotation of the first displacement member 2-6; the second displacement member 2-7 is used for the transportation of the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
本实施例所用圆台状坩埚2-1为单层坩埚,形状为圆台状,圆台状坩埚2-1放置于凹槽时,圆台状坩埚2-1高出凹槽。The circular truncated crucible 2-1 used in this embodiment is a single-layer crucible with a truncated shape. When the circular truncated crucible 2-1 is placed in the groove, the circular truncated crucible 2-1 is higher than the groove.
应用例1Application example 1
本应用例应用实施例1提供的便于更换坩埚的高通量薄膜制备装置时,首先通过软连接管路4调平蒸发腔1与存储腔2的连接管路;然后第二位移件2-7在第一位移件2-6的作用下沿第一位移件2-6的轴向旋转,使第二位移件2-6旋转至待取圆台状坩埚2-1处,通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合,取出代取圆台状坩埚2-1;开启截止件3使蒸发腔1与存储腔2之间连通,然后第二位移件2-7在第一位移件2-6的作用下沿第一位移件2-6的轴向旋转至连通方向,通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合,将圆台状坩埚2-1放置于凹槽;最后通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合返回至至存储腔2,然后关闭截止件3使蒸发腔1与存储腔2之间不连通。When this application example applies the high-throughput thin film preparation device provided in Example 1 for easy replacement of crucibles, firstly, the connection pipeline between the evaporation chamber 1 and the storage chamber 2 is leveled through the flexible connection pipeline 4; then the second displacement member 2-7 Under the action of the first displacement member 2-6, it rotates along the axial direction of the first displacement member 2-6, so that the second displacement member 2-6 rotates to the position of the frustum-shaped crucible 2-1 to be taken, and passes through the second displacement member 2-6. -7 The coordination along its own axial displacement and the axial displacement along the first displacement member 2-6, take out and replace the frustum-shaped crucible 2-1; open the cut-off member 3 to communicate between the evaporation chamber 1 and the storage chamber 2, and then The second displacement member 2-7 rotates to the communication direction along the axial direction of the first displacement member 2-6 under the action of the first displacement member 2-6. The axial displacement of the first displacement member 2-6 is coordinated, and the truncated crucible 2-1 is placed in the groove; finally, the second displacement member 2-7 is displaced along its own axis and along the axis of the first displacement member 2-6. The fit to the displacement returns to the storage chamber 2 , and then the shut-off member 3 is closed so that there is no communication between the evaporation chamber 1 and the storage chamber 2 .
当需要更换蒸发腔1内的圆台状坩埚2-1时,首先开启截止件3使蒸发腔1 与存储腔2之间连通;第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合移动至蒸发腔1,并在第一位移件2-6轴向位移的作用下使第二位移件2-7将圆台状坩埚2-1移出凹槽,然后通过第二位移件沿其自身轴向位移将圆台状坩埚2-1并运输至存储腔2;然后通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合,将圆台状坩埚2-1放置于坩埚存储架2-2;重复取出圆台状坩埚2-1的步骤,实现蒸发腔1内圆台状坩埚2-1的更换。When the truncated crucible 2-1 in the evaporation chamber 1 needs to be replaced, the cut-off member 3 is first opened to communicate between the evaporation chamber 1 and the storage chamber 2; The axial displacement of the displacement member 2-6 is coordinated to move to the evaporation chamber 1, and under the action of the axial displacement of the first displacement member 2-6, the second displacement member 2-7 moves the frustum-shaped crucible 2-1 out of the groove, Then, the truncated crucible 2-1 is transported to the storage chamber 2 through the second displacement member along its own axial displacement; In coordination with the axial displacement, place the truncated crucible 2-1 on the crucible storage rack 2-2; repeat the steps of taking out the truncated crucible 2-1 to replace the truncated crucible 2-1 in the evaporation chamber 1.
应用例2Application example 2
本应用例应用实施例1提供的便于更换坩埚的高通量薄膜制备装置,与应用例1的区别在于,本应用例在取放圆台状坩埚2-1时,坩埚存储架2-2通过支撑轴2-5沿支撑轴2-5的轴向位移,从而配合机械手2-3沿第一位移件2-6轴向的移动,便于对圆台状坩埚2-1的取放。This application example applies the high-throughput thin film preparation device provided in Example 1 that facilitates the replacement of crucibles. The difference from Application Example 1 is that in this application example, when the truncated crucible 2-1 is taken and placed, the crucible storage rack 2-2 is supported by The shaft 2-5 is displaced along the axial direction of the support shaft 2-5, so as to cooperate with the axial movement of the manipulator 2-3 along the first displacement member 2-6, which facilitates the taking and placing of the truncated crucible 2-1.
实施例2Example 2
本实施例提供了一种便于更换坩埚的高通量薄膜制备装置,所述便于更换坩埚的高通量薄膜制备装置的结构示意图如图1所示,包括蒸发腔1与存储腔2。This embodiment provides a high-flux thin-film preparation device that facilitates crucible replacement. The schematic structural diagram of the high-flux thin-film preparation device that facilitates crucible replacement is shown in FIG. 1 , including an evaporation chamber 1 and a storage chamber 2 .
所述蒸发腔1通过软连接管路4与存储腔2连通;所述蒸发腔1与存储腔2的连通管路设置有截止件3。The evaporation chamber 1 is communicated with the storage chamber 2 through a soft connection pipeline 4;
所述蒸发腔1内设置有激光蒸发源以及用于放置圆台状坩埚2-1的凹槽。The evaporation chamber 1 is provided with a laser evaporation source and a groove for placing the truncated crucible 2-1.
所述存储腔2内设置有坩埚存储架2-2以及机械手2-3;所述机械手2-3用于圆台状坩埚2-1在凹槽以及坩埚存储架2-2之间的运输。The storage cavity 2 is provided with a crucible storage rack 2-2 and a manipulator 2-3; the manipulator 2-3 is used for transporting the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
所述坩埚存储架2-2的结构示意图如图2所示,包括支撑板、设置于支撑板上的坩埚支架以及设置于支撑板底部的支撑轴2-5;所述支撑轴2-5穿设于存储腔2,用于坩埚支架沿支撑轴2-5的轴向旋转。The schematic structural diagram of the crucible storage rack 2-2 is shown in FIG. 2, which includes a support plate, a crucible support arranged on the support plate, and a support shaft 2-5 arranged at the bottom of the support plate; the support shaft 2-5 passes through the support plate. It is arranged in the storage chamber 2 for the crucible holder to rotate along the axial direction of the support shaft 2-5.
所述坩埚支架包括2层坩埚存储台2-4;所述坩埚存储台2-4设置有用于放置圆台状坩埚2-1的通孔;所述坩埚存储台2-4通过支撑柱2-8支撑。The crucible support includes two layers of crucible storage tables 2-4; the crucible storage table 2-4 is provided with a through hole for placing the truncated crucible 2-1; the crucible storage table 2-4 passes through the support column 2-8 support.
所述机械手2-3的结构示意图如图3所示,包括第一位移件2-6与第二位移件2-7。The schematic structural diagram of the manipulator 2-3 is shown in FIG. 3, including a first displacement member 2-6 and a second displacement member 2-7.
所述第一位移件2-6穿设于存储腔2,所述第一位移件2-6的轴向与支撑轴2-5的轴向平行,第一位移件2-6的轴向与第二位移件2-7的轴向垂直。所述第一位移件2-6带动第二位移件2-7沿第一位移件2-6的轴向位移,所述第一位移 件2-6还能够带动第二位移件2-7沿第一位移件2-6的轴向旋转;所述第二位移件2-7用于圆台状坩埚2-1在凹槽以及坩埚存储架2-2之间的运输。The first displacement member 2-6 passes through the storage cavity 2, the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5, and the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5. The axial direction of the second displacement member 2-7 is vertical. The first displacement member 2-6 drives the second displacement member 2-7 to move along the axial direction of the first displacement member 2-6, and the first displacement member 2-6 can also drive the second displacement member 2-7 along the axial direction of the first displacement member 2-6. The axial rotation of the first displacement member 2-6; the second displacement member 2-7 is used for the transportation of the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
本实施例所用圆台状坩埚2-1为单层坩埚,形状为圆台状,圆台状坩埚2-1放置于凹槽时,圆台状坩埚2-1高出凹槽。The circular truncated crucible 2-1 used in this embodiment is a single-layer crucible with a truncated shape. When the circular truncated crucible 2-1 is placed in the groove, the circular truncated crucible 2-1 is higher than the groove.
应用例3Application example 3
本应用例应用实施例2提供的便于更换坩埚的高通量薄膜制备装置时,首先通过软连接管路4调平蒸发腔1与存储腔2的连接管路;然后第二位移件2-7在第一位移件2-6的作用下沿第一位移件2-6的轴向旋转,使第二位移件2-6旋转至待取圆台状坩埚2-1处,通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合,取出代取圆台状坩埚2-1;开启截止件3使蒸发腔1与存储腔2之间连通,然后第二位移件2-7在第一位移件2-6的作用下沿第一位移件2-6的轴向旋转至连通方向,通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合,将圆台状坩埚2-1放置于凹槽;最后通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合返回至至存储腔2,然后关闭截止件3使蒸发腔1与存储腔2之间不连通。When this application example applies the high-throughput thin film preparation device provided in Example 2 to facilitate the replacement of crucibles, firstly, the connection pipeline between the evaporation chamber 1 and the storage chamber 2 is leveled through the flexible connection pipeline 4; then the second displacement member 2-7 Under the action of the first displacement member 2-6, it rotates along the axial direction of the first displacement member 2-6, so that the second displacement member 2-6 rotates to the position of the frustum-shaped crucible 2-1 to be taken, and passes through the second displacement member 2-6. -7 The axial displacement along its own axis and the axial displacement along the first displacement member 2-6 are matched, and the truncated crucible 2-1 is taken out and replaced; The second displacement member 2-7 rotates to the communication direction along the axial direction of the first displacement member 2-6 under the action of the first displacement member 2-6. The coordination of the axial displacement of the first displacement member 2-6 is to place the frustum-shaped crucible 2-1 in the groove; finally, the second displacement member 2-7 is displaced along its own axis and along the axis of the first displacement member 2-6. The fit to the displacement returns to the storage chamber 2 , and then the shut-off member 3 is closed so that there is no communication between the evaporation chamber 1 and the storage chamber 2 .
当需要更换蒸发腔1内的圆台状坩埚2-1时,首先开启截止件3使蒸发腔1与存储腔2之间连通;第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合移动至蒸发腔1,并在第一位移件2-6轴向位移的作用下使第二位移件2-7将圆台状坩埚2-1移出凹槽,然后通过第二位移件沿其自身轴向位移将圆台状坩埚2-1并运输至存储腔2;然后通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合,将圆台状坩埚2-1放置于坩埚存储架2-2;重复取出圆台状坩埚2-1的步骤,实现蒸发腔1内圆台状坩埚2-1的更换。When the truncated crucible 2-1 in the evaporation chamber 1 needs to be replaced, the cut-off member 3 is first opened to communicate between the evaporation chamber 1 and the storage chamber 2; the second displacement member 2-7 is displaced along its own axial direction and along the first The axial displacement of the displacement member 2-6 is coordinated to move to the evaporation chamber 1, and under the action of the axial displacement of the first displacement member 2-6, the second displacement member 2-7 moves the frustum-shaped crucible 2-1 out of the groove, Then, the truncated crucible 2-1 is transported to the storage chamber 2 through the second displacement member along its own axial displacement; In coordination with the axial displacement, place the truncated crucible 2-1 on the crucible storage rack 2-2; repeat the steps of taking out the truncated crucible 2-1 to replace the truncated crucible 2-1 in the evaporation chamber 1.
应用例4Application example 4
本应用例应用实施例2提供的便于更换坩埚的高通量薄膜制备装置,与应用例3的区别在于,本应用例在取放圆台状坩埚2-1时,坩埚存储架2-2通过支撑轴2-5沿支撑轴2-5的轴向旋转,从而配合机械手2-3沿第一位移件2-6轴向旋转与轴向位移,便于对圆台状坩埚2-1的取放。This application example applies the high-throughput thin film preparation device provided in example 2 that is convenient for crucible replacement. The difference from application example 3 is that when the truncated crucible 2-1 is taken and placed in this application example, the crucible storage rack 2-2 is supported by The shaft 2-5 rotates along the axial direction of the support shaft 2-5, so as to cooperate with the manipulator 2-3 to rotate and axially displace along the first displacement member 2-6, which is convenient for picking and placing the truncated crucible 2-1.
实施例3Example 3
本实施例提供了一种便于更换坩埚的高通量薄膜制备装置,与实施例1的区别在于,本实施例所用圆台状坩埚2-1为单层坩埚,形状为圆台状,且圆台状 坩埚2-1放置于凹槽时,圆台状坩埚2-1不高出凹槽。为了便于对圆台状坩埚2-1的取出,所述凹槽的底部设置有用于穿过顶针1-2的3个通孔,所述3个用于穿过顶针的通孔沿所述凹槽的中心轴轴对称分布。This embodiment provides a high-throughput thin film preparation device that is convenient for crucible replacement. The difference from Embodiment 1 is that the truncated truncated crucible 2-1 used in this embodiment is a single-layer crucible with a truncated truncated shape, and the truncated truncated crucible When 2-1 is placed in the groove, the truncated crucible 2-1 is not higher than the groove. In order to facilitate the taking out of the truncated crucible 2-1, the bottom of the groove is provided with three through holes for passing through the thimble 1-2, and the three through holes for passing through the thimble are along the groove The central axis of the axisymmetric distribution.
应用例5Application example 5
本应用例应用实施例3提供的便于更换坩埚的高通量薄膜制备装置时,首先通过软连接管路4调平蒸发腔1与存储腔2的连接管路;然后第二位移件2-7在第一位移件2-6的作用下沿第一位移件2-6的轴向旋转,使第二位移件2-6旋转至待取圆台状坩埚2-1处,通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合,取出代取圆台状坩埚2-1;开启截止件3使蒸发腔1与存储腔2之间连通,然后第二位移件2-7在第一位移件2-6的作用下沿第一位移件2-6的轴向旋转至连通方向,通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合,将圆台状坩埚2-1放置于凹槽;最后通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合返回至至存储腔2,然后关闭截止件3使蒸发腔1与存储腔2之间不连通。When this application example applies the high-throughput thin film preparation device provided in Example 3 for easy replacement of crucibles, firstly, the connection pipeline between the evaporation chamber 1 and the storage chamber 2 is leveled through the flexible connection pipeline 4; then the second displacement member 2-7 Under the action of the first displacement member 2-6, it rotates along the axial direction of the first displacement member 2-6, so that the second displacement member 2-6 rotates to the position of the frustum-shaped crucible 2-1 to be taken, and passes through the second displacement member 2-6. -7 The axial displacement along its own axis and the axial displacement along the first displacement member 2-6 are matched, and the truncated crucible 2-1 is taken out and replaced; The second displacement member 2-7 rotates to the communication direction along the axial direction of the first displacement member 2-6 under the action of the first displacement member 2-6. The coordination of the axial displacement of the first displacement member 2-6 is to place the frustum-shaped crucible 2-1 in the groove; finally, the second displacement member 2-7 is displaced along its own axis and along the axis of the first displacement member 2-6. The fit to the displacement returns to the storage chamber 2 , and then the shut-off member 3 is closed so that there is no communication between the evaporation chamber 1 and the storage chamber 2 .
当需要更换蒸发腔1内的圆台状坩埚2-1时,首先开启截止件3使蒸发腔1与存储腔2之间连通,顶针1-2将圆台状坩埚2-1顶出凹槽(如图4所示);第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合移动至蒸发腔1,并在第一位移件2-6轴向位移的作用下使第二位移件2-7将圆台状坩埚2-1移出凹槽,然后通过第二位移件沿其自身轴向位移将圆台状坩埚2-1并运输至存储腔2;然后通过第二位移件2-7沿其自身轴向位移与沿第一位移件2-6轴向位移的配合,将圆台状坩埚2-1放置于坩埚存储架2-2;重复取出圆台状坩埚2-1的步骤,实现蒸发腔1内圆台状坩埚2-1的更换。When it is necessary to replace the truncated crucible 2-1 in the evaporation chamber 1, first open the cut-off member 3 to connect the evaporation chamber 1 and the storage chamber 2, and the ejector pin 1-2 pushes the truncated crucible 2-1 out of the groove (such as 4); the second displacement member 2-7 moves to the evaporation chamber 1 along the axial displacement of the second displacement member 2-7 along with the axial displacement of the first displacement member 2-6, and moves to the evaporation chamber 1 in the axial direction of the first displacement member 2-6. Under the action of displacement, the second displacement member 2-7 moves the frustum-shaped crucible 2-1 out of the groove, and then the frustum-shaped crucible 2-1 is transported to the storage chamber 2 by the second displacement member along its own axial displacement; then Through the cooperation between the axial displacement of the second displacement member 2-7 and the axial displacement of the first displacement member 2-6, the frustum-shaped crucible 2-1 is placed on the crucible storage rack 2-2; the frustum-shaped crucible is repeatedly taken out In step 2-1, the frustum-shaped crucible 2-1 in the evaporation chamber 1 is replaced.
实施例4Example 4
本实施例提供了一种便于更换坩埚的高通量薄膜制备装置,所述便于更换坩埚的高通量薄膜制备装置的结构示意图如图1所示,包括蒸发腔1与存储腔2。This embodiment provides a high-flux thin-film preparation device that facilitates crucible replacement. The schematic structural diagram of the high-flux thin-film preparation device that facilitates crucible replacement is shown in FIG. 1 , including an evaporation chamber 1 and a storage chamber 2 .
所述蒸发腔1通过软连接管路4与存储腔2连通;所述蒸发腔1与存储腔2的连通管路设置有截止件3。The evaporation chamber 1 is communicated with the storage chamber 2 through a soft connection pipeline 4;
所述蒸发腔1内设置有电子束蒸发源以及用于放置圆台状坩埚2-1的凹槽。The evaporation chamber 1 is provided with an electron beam evaporation source and a groove for placing the truncated crucible 2-1.
所述存储腔2内设置有坩埚存储架2-2以及机械手2-3;所述机械手2-3用于圆台状坩埚2-1在凹槽以及坩埚存储架2-2之间的运输。The storage cavity 2 is provided with a crucible storage rack 2-2 and a manipulator 2-3; the manipulator 2-3 is used for transporting the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
所述坩埚存储架2-2的结构示意图如图2所示,包括支撑板、设置于支撑板上的坩埚支架以及设置于支撑板底部的支撑轴2-5;所述支撑轴2-5穿设于存储腔2,用于坩埚支架沿支撑轴2-5的轴向旋转以及沿支撑轴2-5的轴向位移。The schematic structural diagram of the crucible storage rack 2-2 is shown in FIG. 2, which includes a support plate, a crucible support arranged on the support plate, and a support shaft 2-5 arranged at the bottom of the support plate; the support shaft 2-5 passes through the support plate. It is arranged in the storage chamber 2 for the crucible support to rotate along the axial direction of the support shaft 2-5 and to displace along the axial direction of the support shaft 2-5.
所述坩埚支架包括2层坩埚存储台2-4;所述坩埚存储台2-4设置有用于放置圆台状坩埚2-1的通孔;所述坩埚存储台2-4通过支撑柱2-8支撑。The crucible support includes two layers of crucible storage tables 2-4; the crucible storage table 2-4 is provided with a through hole for placing the truncated crucible 2-1; the crucible storage table 2-4 passes through the support column 2-8 support.
所述机械手2-3的结构示意图如图3所示,包括第一位移件2-6与第二位移件2-7。The schematic structural diagram of the manipulator 2-3 is shown in FIG. 3, including a first displacement member 2-6 and a second displacement member 2-7.
所述第一位移件2-6穿设于存储腔2,所述第一位移件2-6的轴向与支撑轴2-5的轴向平行,第一位移件2-6的轴向与第二位移件2-7的轴向垂直。所述第一位移件2-6带动第二位移件2-7沿第一位移件2-6的轴向位移,所述第一位移件2-6还能够带动第二位移件2-7沿第一位移件2-6的轴向旋转;所述第二位移件2-7用于圆台状坩埚2-1在凹槽以及坩埚存储架2-2之间的运输。The first displacement member 2-6 passes through the storage cavity 2, the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5, and the axial direction of the first displacement member 2-6 is parallel to the axial direction of the support shaft 2-5. The axial direction of the second displacement member 2-7 is vertical. The first displacement member 2-6 drives the second displacement member 2-7 to move along the axial direction of the first displacement member 2-6, and the first displacement member 2-6 can also drive the second displacement member 2-7 along the axial direction of the first displacement member 2-6. The axial rotation of the first displacement member 2-6; the second displacement member 2-7 is used for the transportation of the frustum-shaped crucible 2-1 between the groove and the crucible storage rack 2-2.
本实施例所用圆台状坩埚2-1为单层坩埚,形状为圆台状,且圆台状坩埚2-1放置于凹槽时,圆台状坩埚2-1高出凹槽。The circular truncated crucible 2-1 used in this embodiment is a single-layer crucible with a truncated shape, and when the circular truncated crucible 2-1 is placed in the groove, the circular truncated crucible 2-1 is higher than the groove.
应用例6Application example 6
本应用例应用实施例4提供的便于更换坩埚的高通量薄膜制备装置,实施例4与实施例1提供的便于更换坩埚的高通量薄膜制备装置的区别在于,实施例4提供的坩埚支架既能够沿支撑轴2-5的轴向位移,也能够沿支撑轴2-5的轴向旋转。This application example applies the high-flux thin-film preparation device for easy replacement of crucibles provided in Example 4. The difference between Example 4 and the high-flux thin-film preparation device for easy replacement of crucibles provided in Example 4 is that the crucible support provided in Example 4 It can displace along the axial direction of the support shaft 2-5, and can also rotate along the axial direction of the support shaft 2-5.
因此,应用实施例4提供的便于更换坩埚的高通量薄膜制备装置时,可选择性的使坩埚支架沿支撑轴2-5的轴向位移和/或轴向旋转,从而配合机械手2-3实现对坩埚存储架2-2上的圆台状坩埚2-1的取放。Therefore, when applying the high-throughput thin film preparation device for easy replacement of crucibles provided in Example 4, the crucible support can be selectively displaced and/or rotated in the axial direction of the support shaft 2-5, so as to cooperate with the manipulator 2-3 The truncated crucible 2-1 on the crucible storage rack 2-2 can be picked and placed.
当坩埚支架固定不动时,利用机械手2-3实现坩埚存储架2-2上的圆台状坩埚2-1的取放的方法参考应用例1与应用例3。When the crucible support is fixed, refer to Application Example 1 and Application Example 3 for the method of taking and placing the truncated crucible 2-1 on the crucible storage rack 2-2 by using the manipulator 2-3.
当坩埚支架沿支撑轴2-5的轴向位移时,利用机械手2-3实现坩埚存储架2-2上的圆台状坩埚2-1的取放的方法参考应用例2。When the crucible support is displaced along the axial direction of the support shaft 2-5, the method of using the manipulator 2-3 to realize the picking and placing of the truncated crucible 2-1 on the crucible storage rack 2-2 refers to Application Example 2.
当坩埚支架沿支撑轴2-5的轴向旋转时,利用机械手2-3实现坩埚存储架2-2上的圆台状坩埚2-1的取放的方法参考应用例4。When the crucible holder rotates along the axial direction of the support shaft 2-5, refer to Application Example 4 for the method of using the manipulator 2-3 to realize the picking and placing of the truncated crucible 2-1 on the crucible storage rack 2-2.
实施例5Example 5
本实施例提供了一种便于更换坩埚的高通量薄膜制备装置,与实施例1的区别在于,本实施例提供的圆台状坩埚2-1的结构示意图如图6所示,所述圆台状坩埚2-1包括内层2-1-1以及设置于内层2-1-1外侧的保护层2-1-2。This embodiment provides a high-throughput thin film preparation device that facilitates crucible replacement. The difference from Embodiment 1 is that the structure diagram of the truncated frustum crucible 2-1 provided in this embodiment is shown in FIG. 6 . The crucible 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed outside the inner layer 2-1-1.
本实施例所述圆台状坩埚2-1放置于凹槽后的示意图如图5所示。Figure 5 shows a schematic diagram of the circular truncated crucible 2-1 in this embodiment after being placed in the groove.
所述内层2-1-3所用材料为Al 2O 3,所述保护层2-1-4所用材料为钨。 The material used for the inner layer 2-1-3 is Al 2 O 3 , and the material used for the protective layer 2-1-4 is tungsten.
本实施例通过使圆台状坩埚2-1包括内层2-1-1以及设置于内层2-1-1外侧的保护层2-1-2,圆台状坩埚2-1放置于凹槽时,内层2-1-1不高出凹槽,保护层2-1-2高出凹槽,既能够保证内层2-1-1的受热均匀,又能够便于圆台状坩埚2-1在凹槽的取放。In this embodiment, the frustum-shaped crucible 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed outside the inner layer 2-1-1. When the frustum-shaped crucible 2-1 is placed in the groove , the inner layer 2-1-1 is not higher than the groove, and the protective layer 2-1-2 is higher than the groove, which can not only ensure the uniform heating of the inner layer 2-1-1, but also facilitate the truncated crucible 2-1 in the Pick and place of grooves.
实施例6Example 6
本实施例提供了一种便于更换坩埚的高通量薄膜制备装置,与实施例1的区别在于,本实施例提供的圆台状坩埚2-1的结构示意图如图6所示,所述圆台状坩埚2-1包括内层2-1-1以及设置于内层2-1-1外侧的保护层2-1-2。This embodiment provides a high-throughput thin film preparation device that facilitates crucible replacement. The difference from Embodiment 1 is that the structure diagram of the truncated frustum crucible 2-1 provided in this embodiment is shown in FIG. 6 . The crucible 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed outside the inner layer 2-1-1.
本实施例所述圆台状坩埚2-1放置于凹槽后的示意图如图5所示。Figure 5 shows a schematic diagram of the circular truncated crucible 2-1 in this embodiment after being placed in the groove.
所述内层2-1-3所用材料为石墨,所述保护层2-1-4所用材料为钼。The material used for the inner layer 2-1-3 is graphite, and the material used for the protective layer 2-1-4 is molybdenum.
本实施例通过使圆台状坩埚2-1包括内层2-1-1以及设置于内层2-1-1外侧的保护层2-1-2,圆台状坩埚2-1放置于凹槽时,内层2-1-1不高出凹槽,保护层2-1-2高出凹槽,既能够保证内层2-1-1的受热均匀,又能够便于圆台状坩埚2-1在凹槽的取放。In this embodiment, the frustum-shaped crucible 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed outside the inner layer 2-1-1. When the frustum-shaped crucible 2-1 is placed in the groove , the inner layer 2-1-1 is not higher than the groove, and the protective layer 2-1-2 is higher than the groove, which can not only ensure the uniform heating of the inner layer 2-1-1, but also facilitate the truncated crucible 2-1 in the Pick and place of grooves.
实施例7Example 7
本实施例提供了一种便于更换坩埚的高通量薄膜制备装置,与实施例3的区别在于,本实施例所用圆台状坩埚2-1的结构示意图如图7所示,所述圆台状坩埚2-1包括内层2-1-1以及设置于内层2-1-1外侧的保护层2-1-2,且圆台状坩埚2-1放置于凹槽时,内层2-1-1不高出凹槽,保护层2-1-2不高出凹槽。This embodiment provides a high-throughput thin film preparation device that facilitates crucible replacement. The difference from Embodiment 3 is that the structure diagram of the circular frustum crucible 2-1 used in this embodiment is shown in FIG. 7 . 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed on the outside of the inner layer 2-1-1, and when the circular frustum crucible 2-1 is placed in the 1 is not higher than the groove, and the protective layer 2-1-2 is not higher than the groove.
为了便于对圆台状坩埚2-1的取出,所述凹槽的底部设置有用于穿过顶针1-2的3个通孔,所述3个用于穿过顶针的通孔沿所述凹槽的中心轴轴对称分布。In order to facilitate the taking out of the truncated crucible 2-1, the bottom of the groove is provided with three through holes for passing through the thimble 1-2, and the three through holes for passing through the thimble are along the groove The central axis of the axisymmetric distribution.
本实施例通过使圆台状坩埚2-1包括内层2-1-1以及设置于内层2-1-1外侧的保护层2-1-2,使内层2-1-1受热均匀;通过3个用于穿过顶针的通孔的设置,能够便于圆台状坩埚2-1的取放。In this embodiment, the frustum-shaped crucible 2-1 includes an inner layer 2-1-1 and a protective layer 2-1-2 disposed outside the inner layer 2-1-1, so that the inner layer 2-1-1 is heated evenly; The arrangement of the three through holes for passing the thimble can facilitate the taking and placing of the truncated crucible 2-1.
综上所述,本申请提供的便于更换坩埚的高通量薄膜制备装置通过存储腔与蒸发腔的设置,能够实现在真空环境下对圆台状坩埚进行更换,从而实现多种材料的交替镀膜;本申请通过支撑轴使坩埚支架沿支撑轴的轴向位移,且能够使坩埚支架沿支撑轴的轴向旋转,便于机械手对坩埚支架不同位置圆台状坩埚的取放,提高了存储腔内的空间利用率;本申请通过第一位移件的设置使第二位移件沿第一位移件的轴向位移,且能够使第二位移件沿第一位移件的轴向旋转,便于第二位移件对坩埚支撑架不同位置圆台状坩埚的取放;本申请通过使述圆台状坩埚包括内层以及设置于内层外侧的保护层,并使所述圆台状坩埚放置于凹槽时,内层不高出凹槽,保护层高出凹槽,既能够保证内层的受热均匀,又能够便于圆台状坩埚在凹槽的取放。In summary, the high-throughput thin film preparation device provided by the present application, which is easy to replace the crucible, can realize the replacement of the truncated crucible in a vacuum environment through the arrangement of the storage chamber and the evaporation chamber, thereby realizing the alternate coating of various materials; In the present application, the crucible support is displaced along the axial direction of the support shaft through the support shaft, and the crucible support can be rotated along the axial direction of the support shaft, which is convenient for the manipulator to pick and place the truncated crucible in different positions of the crucible support, and improves the space in the storage cavity Utilization rate; in the present application, the second displacement member can be displaced along the axial direction of the first displacement member through the arrangement of the first displacement member, and the second displacement member can be rotated along the axial direction of the first displacement member, which is convenient for the second displacement member to Picking and placing of truncated truncated crucibles at different positions of the crucible support frame; in the present application, the truncated truncated crucible is made to include an inner layer and a protective layer arranged on the outside of the inner layer, and when the truncated crucible is placed in the groove, the inner layer is not high Out of the groove, the protective layer is higher than the groove, which can not only ensure the uniform heating of the inner layer, but also facilitate the taking and placing of the truncated crucible in the groove.
申请人声明,以上所述仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,所属技术领域的技术人员应该明了,任何属于本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到的变化或替换,均落在本申请的保护范围和公开范围之内。The applicant declares that the above are only specific embodiments of the present application, but the protection scope of the present application is not limited to this. Those skilled in the art should Changes or substitutions that can be easily conceived within the technical scope all fall within the protection scope and disclosure scope of the present application.

Claims (13)

  1. 一种便于更换坩埚的高通量薄膜制备装置,其中,所述便于更换坩埚的高通量薄膜制备装置包括蒸发腔与存储腔;A high-flux thin-film preparation device for easy replacement of crucibles, wherein the high-throughput thin-film preparation device for easy replacement of crucibles includes an evaporation chamber and a storage chamber;
    所述蒸发腔通过软连接管路与存储腔连通;所述蒸发腔与存储腔的连通管路设置有截止件;The evaporation chamber is communicated with the storage chamber through a soft connection pipeline; the communication pipeline between the evaporation chamber and the storage chamber is provided with a cut-off piece;
    所述蒸发腔内设置有蒸发源以及用于放置坩埚的凹槽;The evaporation chamber is provided with an evaporation source and a groove for placing the crucible;
    所述存储腔内设置有坩埚存储架以及机械手;所述机械手用于坩埚在凹槽以及坩埚存储架之间的运输;The storage cavity is provided with a crucible storage rack and a manipulator; the manipulator is used for the transportation of the crucible between the groove and the crucible storage rack;
    所述坩埚为圆台状坩埚。The crucible is a circular truncated crucible.
  2. 根据权利要求1所述的便于更换坩埚的高通量薄膜制备装置,其中,所述坩埚存储架包括支撑板、设置于支撑板上的坩埚支架以及设置于支撑板底部的支撑轴;所述支撑轴穿设于存储腔;所述支撑轴用于坩埚支架沿支撑轴的轴向位移和/或坩埚支架沿支撑轴的轴向旋转。The high-throughput thin film preparation device for easy replacement of crucibles according to claim 1, wherein the crucible storage rack comprises a support plate, a crucible support arranged on the support plate, and a support shaft arranged at the bottom of the support plate; the support plate The shaft passes through the storage cavity; the support shaft is used for the axial displacement of the crucible support along the support shaft and/or the axial rotation of the crucible support along the support shaft.
  3. 根据权利要求2所述的便于更换坩埚的高通量薄膜制备装置,其中,所述坩埚支架包括至少1层坩埚存储台;所述坩埚存储台用于放置圆台状坩埚;所述坩埚存储台通过支撑柱支撑。The high-throughput thin film preparation device for easy replacement of crucibles according to claim 2, wherein the crucible support comprises at least one layer of crucible storage platforms; the crucible storage platforms are used for placing truncated crucibles; the crucible storage platforms pass through Support column support.
  4. 根据权利要求3所述的便于更换坩埚的高通量薄膜制备装置,其中,所述坩埚存储台设置有放置圆台状坩埚的至少2个通孔。The device for preparing high-throughput thin films for easy replacement of crucibles according to claim 3, wherein the crucible storage table is provided with at least two through holes for placing the truncated crucibles.
  5. 根据权利要求1-4任一项所述的便于更换坩埚的高通量薄膜制备装置,其中,所述机械手包括第一位移件与第二位移件;The high-throughput thin film preparation device for easy replacement of crucibles according to any one of claims 1-4, wherein the manipulator comprises a first displacement part and a second displacement part;
    所述第一位移件穿设于存储腔,所述第一位移件的轴向与支撑轴的轴向平行,第一位移件的轴向与第二位移件的轴向垂直;The first displacement member is penetrated through the storage cavity, the axial direction of the first displacement member is parallel to the axial direction of the support shaft, and the axial direction of the first displacement member is perpendicular to the axial direction of the second displacement member;
    所述第一位移件带动第二位移件沿第一位移件的轴向位移和/或带动第二位移件沿第一位移件的轴向旋转;所述第二位移件用于坩埚在凹槽以及坩埚存储架之间的运输。The first displacement member drives the second displacement member to displace along the axial direction of the first displacement member and/or drives the second displacement member to rotate along the axial direction of the first displacement member; the second displacement member is used for the crucible to be placed in the groove. and transport between crucible storage racks.
  6. 根据权利要求1-5任一项所述的便于更换坩埚的高通量薄膜制备装置,其中,所述圆台状坩埚为单层坩埚;The device for preparing high-throughput thin films that is convenient for crucible replacement according to any one of claims 1-5, wherein the frustum-shaped crucible is a single-layer crucible;
    所述圆台状坩埚放置于凹槽时,圆台状坩埚高出凹槽。When the circular truncated crucible is placed in the groove, the circular truncated crucible is higher than the groove.
  7. 根据权利要求1-5任一项所述的便于更换坩埚的高通量薄膜制备装置,其中,所述圆台状坩埚为单层坩埚;The device for preparing high-throughput thin films that is convenient for crucible replacement according to any one of claims 1-5, wherein the frustum-shaped crucible is a single-layer crucible;
    所述圆台状坩埚放置于凹槽时,圆台状坩埚不高出凹槽;When the circular truncated crucible is placed in the groove, the circular truncated crucible is not higher than the groove;
    所述凹槽的底部设置有至少3个用于穿过顶针的通孔;所述顶针用于穿过通孔顶起圆台状坩埚。The bottom of the groove is provided with at least three through holes for passing through the thimbles; the thimbles are used to push up the truncated crucible through the through holes.
  8. 根据权利要求1-5任一项所述的便于更换坩埚的高通量薄膜制备装置,其中,所述圆台状坩埚包括内层以及设置于内层外侧的保护层;The high-flux thin-film preparation device for easy crucible replacement according to any one of claims 1-5, wherein the frustum-shaped crucible comprises an inner layer and a protective layer disposed outside the inner layer;
    所述圆台状坩埚放置于凹槽时,内层不高出凹槽,保护层高出凹槽。When the circular truncated crucible is placed in the groove, the inner layer is not higher than the groove, and the protective layer is higher than the groove.
  9. 根据权利要求1-5任一项所述的便于更换坩埚的高通量薄膜制备装置,其中,所述圆台状坩埚包括内层以及设置于内层外侧的保护层;The high-flux thin-film preparation device for easy crucible replacement according to any one of claims 1-5, wherein the frustum-shaped crucible comprises an inner layer and a protective layer disposed outside the inner layer;
    所述圆台状坩埚放置于凹槽时,内层不高出凹槽,保护层不高出凹槽;When the circular truncated crucible is placed in the groove, the inner layer is not higher than the groove, and the protective layer is not higher than the groove;
    所述凹槽的底部设置有至少3个用于穿过顶针的通孔;所述顶针用于穿过通孔顶起圆台状坩埚。The bottom of the groove is provided with at least three through holes for passing through the thimbles; the thimbles are used to push up the truncated crucible through the through holes.
  10. 根据权利要求8或9所述的便于更换坩埚的高通量薄膜制备装置,其中,所述内层所用材料包括Al 2O 3或石墨。 The high-flux thin-film preparation device for easy crucible replacement according to claim 8 or 9, wherein the material used for the inner layer comprises Al 2 O 3 or graphite.
  11. 根据权利要求8或9所述的便于更换坩埚的高通量薄膜制备装置,其中,所述保护层所用材料包括钼、钨或铜中的任意一种。The high-throughput thin film preparation device for easy replacement of crucibles according to claim 8 or 9, wherein the material used for the protective layer comprises any one of molybdenum, tungsten or copper.
  12. 一种利用权利要求1-11任一项所述的便于更换坩埚的高通量薄膜制备装置进行蒸发镀膜的应用,其包括如下步骤:A kind of application that utilizes the high-flux thin film preparation device that is convenient to replace the crucible according to any one of claims 1-11 to carry out the application of evaporation coating, and it comprises the steps:
    (1)真空条件下,使蒸发腔与存储腔连通,通过坩埚存储架与机械手的配合,将放置于坩埚存储架的坩埚转移至凹槽,实现蒸发腔内坩埚的放置;(1) under vacuum conditions, the evaporation chamber is communicated with the storage chamber, and the crucible placed in the crucible storage rack is transferred to the groove through the cooperation of the crucible storage rack and the manipulator, so as to realize the placement of the crucible in the evaporation chamber;
    (2)真空条件下,使蒸发腔与存储腔连通,通过坩埚存储架与机械手的配合,将放置于凹槽的坩埚转移至坩埚存储架,实现蒸发腔内坩埚的取出;(2) under vacuum conditions, the evaporation chamber is communicated with the storage chamber, and the crucible placed in the groove is transferred to the crucible storage rack through the cooperation of the crucible storage rack and the manipulator, so as to realize the taking out of the crucible in the evaporation chamber;
    步骤(1)与步骤(2)不分先后顺序。Step (1) and step (2) are in no particular order.
  13. 一种利用权利要求1-11任一项所述的便于更换坩埚的高通量薄膜制备装置进行蒸发镀膜的应用,其包括如下步骤:A kind of application that utilizes the high-flux thin film preparation device that is convenient to replace the crucible according to any one of claims 1-11 to carry out the application of evaporation coating, and it comprises the steps:
    (1)真空条件下,使蒸发腔与存储腔连通,通过坩埚存储架与机械手的配合,将放置于坩埚存储架的坩埚转移至凹槽,实现蒸发腔内坩埚的放置;(1) under vacuum conditions, the evaporation chamber is communicated with the storage chamber, and the crucible placed in the crucible storage rack is transferred to the groove through the cooperation of the crucible storage rack and the manipulator, so as to realize the placement of the crucible in the evaporation chamber;
    (2)真空条件下,使蒸发腔与存储腔连通,利用顶针将坩埚顶出凹槽,然后通过坩埚存储架与机械手的配合,将放置于凹槽的坩埚转移至坩埚存储架,实现蒸发腔内坩埚的取出;(2) Under vacuum conditions, connect the evaporation chamber with the storage chamber, use the thimble to push the crucible out of the groove, and then transfer the crucible placed in the groove to the crucible storage rack through the cooperation of the crucible storage rack and the manipulator to realize the evaporation chamber Take out the inner crucible;
    步骤(1)与步骤(2)不分先后顺序。Step (1) and step (2) are in no particular order.
PCT/CN2022/081093 2021-04-01 2022-03-16 High-flux film preparation device in which crucible replacement is convenient, and use thereof WO2022206385A1 (en)

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